講題：寬能隙氧化鎵半導體材料介紹
Topic: Introduction of -Ga2O3 Wide Bandgap Compound Semiconductor

講者：陳華茂 工研院/寬能隙半導體元件開發部/副經理
Speaker: Hua-Mao Chen , ITRI / WBG Semiconductor Device Development Department/ Deputy Manager

時間：9/27 (五) 13:10-15:00
Time: Sep 27th Fri. 13:10-15:00

地點：電機系館B1F 迅慧講堂 
Venue: UMC Room(92X18) , B1F EE Building

邀請人：微電子所、奈積學程
Institute of Microelectronics & Program on Nano Integrated Circuit Engineering