國立成功大學電機工程學系 教師個人頁面
English Version
陳冠竹 助理教授
地址
電機系館11樓92B15室
Email
TEL
06-2757575 ext.TBA
實驗室
CLAB
(R92C19/ext.62400-1219)
學經歷
學歷
2023
國立台灣大學電子工程研究所博士
2019
國立成功大學電機工程學系學士
經歷
2026/8~now
國立成功大學助理教授
2025/7~2026/7
英特爾元件工程師
2024/1~2025/6
校際微電子中心(imec)博士後研究員
2023/8~2023/12
國立成功大學博士後研究員
研究領域
  • 半導體量子元件
  • 低溫電晶體
  • 金氧半電容元件
著作
期刊論文( Journal )
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  1. F. Lorenzelli, K. ‑C. Chen, C. Godfrin, M. Stucchi, A. Grill, D. Wan, K. De Greve, E. J. Marinissen, and G. Gielen, “Toward Wafer‑Scale Screening of Spin Qubits: A Room‑Temperature‑Aware Single‑Electron Transistor Design,” IEEE Transactions on Electron Devices, vol. 72, no. 8, pp. 4506‑4514, 2025
  2. K. ‑C. Chen, C. Godfrin, G. Simion, I. Fattal, S. Kubicek, S. Beyne, B. Raes, A. Loenders, K.‑H. Kao, D. Wan and K. De Greve, “Statistical analysis of spurious dot formation in silicon metal‑oxide‑semiconductor single electron transistors,” Physical Review B, vol. 111, no. 125301, 2025 (editors' suggestion)
  3. Y. ‑C. Chen, J. ‑P. Chou, K. ‑C. Chen, J. ‑Y. Lin, W. C. ‑Y. Ma, K.‑H. Kao, M. ‑H. Chiang and Y. ‑H. Wang, “Extracting Device Parameters of TFTs With Ultrathin Channels at Low Temperatures by Particle Swarm Optimization,” IEEE Transactions on Electron Devices, vol. 71, no. 8, pp. 4717‑4722, 2024
  4. K. ‑C. Chen, K. ‑W. Lin, and J. ‑G. Hwu, “Influence of Outer Oxide Charges on the Electrostatics of Metal‑Insulator‑Semiconductor Tunnel Diode,” ECS Transactions, vol. 111, pp. 99‑104, 2023
  5. K. ‑C. Chen, K. ‑W. Lin, S. ‑W. Huang, J. ‑Y. Lin, and J. ‑G. Hwu, “Comprehensive Study of Inversion Capacitance in Metal-Insulator‑Semiconductor Capacitor with Existing Oxide Charges,” IEEE Journal of the Electron Devices Society, vol. 10, pp. 960‑969, 2022
  6. K. ‑W. Lin, K. ‑C. Chen and J. ‑G. Hwu, “An Analytical Model for the Electrostatics of Reverse‑Biased Al/SiO₂/Si(p) MOS Capacitors With Tunneling Oxide,” IEEE Transactions on Electron Devices, vol. 69, no. 4, pp. 1972‑1978, 2022
  7. J. ‑H. Chen, K. ‑C. Chen and J. ‑G. Hwu, “Fringing Field Induced Current Coupling in Concentric Metal-Insulator-Semiconductor (MIS) Tunnel Diodes with Ultra‑Thin Oxide,” AIP Advances, vol. 12, 045116, 2022
  8. K. ‑C. Chen and J. ‑G. Hwu, “Schottky Barrier Height Modulation (SBHM) Induced Photon Current Gain in MIS(p) Tunnel Diodes for Low Operation Voltage,” IEEE Sensors Journal, vol. 22, no. 4, pp. 3164‑3171, 2022
  9. K. ‑C. Chen, K. ‑W. Lin and J. ‑G. Hwu, “Role of Schottky Barrier Height Modulation on the Reverse Bias Current Behavior of MIS(p) Tunnel Diodes,” IEEE Access, vol. 9, pp. 163929‑163937, 2021
  10. J. ‑H. Chen, K. ‑C. Chen and J. ‑G. Hwu, “Energy‑Saving Logic Gates Utilizing Coupling Phenomenon Between MIS(p) Tunneling Diodes,” IEEE Transactions on Electron Devices, vol. 68, no. 12, pp. 6558‑6562, 2021
  11. K. ‑C. Chen and J. ‑G. Hwu, “Coupling Sensitivity in Concentric Metal-Insulator-Semiconductor Tunnel Diodes by Controlling the Lateral Injection Electrons,” AIP Advances, vol. 10, 105002, 2020
會議論文( Conference )
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  1. K. ‑C. Chen, C. Godfrin, G. Simion, I. Fattal, B. Raes, A. Loenders, D. Wan, K. De Greve, “Investigating Source of Spurious Dots in 300 mm Process Quantum Devices by Triangulation,” SpinQubit6, P229, Sydney, Australia, Nov. 2024
  2. K. ‑C. Chen, K. ‑W. Lin, and J. ‑G. Hwu, “Impact of Oxide‑Charge‑Induced Lateral Coupling on the Electrostatics of Metal‑Insulator‑Semiconductor Tunnel Diode,” 243rd ECS Meeting, H02‑1851, Boston, Massachusetts, USA, May. 2023
專利
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其他
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研究計劃
  1. (2024)量子點參數的多重特性分析
開授課程
115學年度上學期
指導學生
本學年度 實驗室成員
特殊榮譽
NCKU EE