NCKUEE Faculty Data
Chinese Version
Assistant Professor Kuan-Chu Chen
Address
EE Building 11F R92B15
Email
TEL
+886-6-2757575 ext.TBA
Lab
CLAB
(R92C19/ext.62400-1219)
Background
Educations
2023
PhD, Electronics Engineering, National Taiwan University, Taiwan
2019
BS, Electrical Engineering, National Cheng Kung University, Taiwan
Experiences
2026/8~now
Assistant Professor, National Cheng Kung University, Taiwan
2025/7~2026/7
Device Engineer, Intel, Taiwan
2024/1~2025/6
Postdoc Researcher, imec, Belgium
2023/8~2023/12
Postdoc Researcher, National Cheng Kung University, Taiwan
Specialities
  • Semiconductor quantum devices
  • Cryogenic CMOS
  • Metal-Oxide-Semiconductor Capacitor
Publication
Journal
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  1. F. Lorenzelli, K. ‑C. Chen, C. Godfrin, M. Stucchi, A. Grill, D. Wan, K. De Greve, E. J. Marinissen, and G. Gielen, “Toward Wafer‑Scale Screening of Spin Qubits: A Room‑Temperature‑Aware Single‑Electron Transistor Design,” IEEE Transactions on Electron Devices, vol. 72, no. 8, pp. 4506‑4514, 2025
  2. K. ‑C. Chen, C. Godfrin, G. Simion, I. Fattal, S. Kubicek, S. Beyne, B. Raes, A. Loenders, K.‑H. Kao, D. Wan and K. De Greve, “Statistical analysis of spurious dot formation in silicon metal‑oxide‑semiconductor single electron transistors,” Physical Review B, vol. 111, no. 125301, 2025 (editors' suggestion)
  3. Y. ‑C. Chen, J. ‑P. Chou, K. ‑C. Chen, J. ‑Y. Lin, W. C. ‑Y. Ma, K.‑H. Kao, M. ‑H. Chiang and Y. ‑H. Wang, “Extracting Device Parameters of TFTs With Ultrathin Channels at Low Temperatures by Particle Swarm Optimization,” IEEE Transactions on Electron Devices, vol. 71, no. 8, pp. 4717‑4722, 2024
  4. K. ‑C. Chen, K. ‑W. Lin, and J. ‑G. Hwu, “Influence of Outer Oxide Charges on the Electrostatics of Metal‑Insulator‑Semiconductor Tunnel Diode,” ECS Transactions, vol. 111, pp. 99‑104, 2023
  5. K. ‑C. Chen, K. ‑W. Lin, S. ‑W. Huang, J. ‑Y. Lin, and J. ‑G. Hwu, “Comprehensive Study of Inversion Capacitance in Metal-Insulator‑Semiconductor Capacitor with Existing Oxide Charges,” IEEE Journal of the Electron Devices Society, vol. 10, pp. 960‑969, 2022
  6. K. ‑W. Lin, K. ‑C. Chen and J. ‑G. Hwu, “An Analytical Model for the Electrostatics of Reverse‑Biased Al/SiO₂/Si(p) MOS Capacitors With Tunneling Oxide,” IEEE Transactions on Electron Devices, vol. 69, no. 4, pp. 1972‑1978, 2022
  7. J. ‑H. Chen, K. ‑C. Chen and J. ‑G. Hwu, “Fringing Field Induced Current Coupling in Concentric Metal-Insulator-Semiconductor (MIS) Tunnel Diodes with Ultra‑Thin Oxide,” AIP Advances, vol. 12, 045116, 2022
  8. K. ‑C. Chen and J. ‑G. Hwu, “Schottky Barrier Height Modulation (SBHM) Induced Photon Current Gain in MIS(p) Tunnel Diodes for Low Operation Voltage,” IEEE Sensors Journal, vol. 22, no. 4, pp. 3164‑3171, 2022
  9. K. ‑C. Chen, K. ‑W. Lin and J. ‑G. Hwu, “Role of Schottky Barrier Height Modulation on the Reverse Bias Current Behavior of MIS(p) Tunnel Diodes,” IEEE Access, vol. 9, pp. 163929‑163937, 2021
  10. J. ‑H. Chen, K. ‑C. Chen and J. ‑G. Hwu, “Energy‑Saving Logic Gates Utilizing Coupling Phenomenon Between MIS(p) Tunneling Diodes,” IEEE Transactions on Electron Devices, vol. 68, no. 12, pp. 6558‑6562, 2021
  11. K. ‑C. Chen and J. ‑G. Hwu, “Coupling Sensitivity in Concentric Metal-Insulator-Semiconductor Tunnel Diodes by Controlling the Lateral Injection Electrons,” AIP Advances, vol. 10, 105002, 2020
Conference
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  1. K. ‑C. Chen, C. Godfrin, G. Simion, I. Fattal, B. Raes, A. Loenders, D. Wan, K. De Greve, “Investigating Source of Spurious Dots in 300 mm Process Quantum Devices by Triangulation,” SpinQubit6, P229, Sydney, Australia, Nov. 2024
  2. K. ‑C. Chen, K. ‑W. Lin, and J. ‑G. Hwu, “Impact of Oxide‑Charge‑Induced Lateral Coupling on the Electrostatics of Metal‑Insulator‑Semiconductor Tunnel Diode,” 243rd ECS Meeting, H02‑1851, Boston, Massachusetts, USA, May. 2023
Patent
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Others
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Projects
  1. (2024) Multiplexed characterization of quantum dot parameters
Classes
2026 Fall
Students
Current Academic Year Lab Members
Honors
NCKU EE