國立成功大學電機工程學系 教師個人頁面
English Version
王水進 特聘教授
地址
電機系館12樓92C15室
Email
TEL
06-2757575 ext.62351
實驗室
微電子研究室
(R92C21/ext.62400-1221)
學經歷
學歷
1985
國立成功大學電機博士
1980
國立成功大學電機碩士
1978
國立成功大學電機學士
經歷
國立成功大學電機系教授
成大醫院工務室主任
1995-1996
日本京都大學電機系客座研究員
1993-1995
國立成功大學電機工廠主任
國立成功大學電機系副教授
1990-1991
美國洛杉磯加州大學電機系客座研究員
1982-1985
國立成功大學電機系講師
研究領域
  • 微電子、半導體元件物理與模擬分析
  • 矽鍺分子束磊晶成長、量子元件設計與研製
  • 碳化矽、磊晶成長、高溫、高功率元件研製
  • 高亮度LED、白光LED研製
  • 奈米材料開發與應用
  • 高介電係數薄膜電晶體設計與研製
著作
期刊論文( Journal )
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  1. S. J. Wang, Hao Yi Tsai, and S. C. Sun, “Characterization of Tungsten Carbide as Diffusion Barrier for Cu Metallization”, Jpn. J. Appl. Phys, Part 1, No. 4B, Vol. 40, pp. 2642-2649, 2001.
  2. Shui-Jinn Wang, Hao-Ti Tsai, and S. C. Sun, “Characterization of Sputtered Titanium Carbide Film as Diffusion Barrier for Copper Metallization” J. Electrochem. Soc., Vol. 148, No. 8, pp. 563-568, 2001.
  3. Shui-Jinn Wang, Hao-Yi Tsai, S. C. Sun, M. H. Shiao “Thermal Stability of Sputtered Tungsten Carbide as Diffusion Barrier for Copper Metallization” J. Electrochem. Soc., Vol. 148, No. 9, pp.500-506, 2001.
  4. Shui-Jinn Wang, Hao-Yi Tsai, S. C. Sun, and M. H. Shiao “Characterization of Sputter Ta-C-N Film in the Cu/barrier/Si Contact System”, J. Electron. Mater., Vol. 30, No. 8, pp. 917-924, 2001.
  5. Shui-Jinn Wang, Hao-Yi Tsai, and S. C. Sun (2001), “A Comparative Study of Sputtered TaCx and WCx Films as Diffusion Barriers Between Cu and Si”, Thin Solid Films, Vol 394/1-2, pp 179-187, August 2001.
  6. Shui-Jinn Wang, Hao-Yi Tsai, and S.C. Sun, “Influence of Nitrogen Doping on the Barrier Properties of Sputter Tantalum Carbide Films for Copper Metallization” Jpn. J. Appl. Phys, Vol. 40, Part 1, No. 11, pp. 6212-6220, 2001.
  7. W. J. Lee, Y. K. Fang, J. J. Ho, C. Y. Chen, L. H. Chiu, S. J. Wang, F. Dai, T. Hsieh, R. Y. Tsai, D. Huang, and F. C. Ho, “Orgainc lighting-emitting diode on indium zinc oxide film prepared by ion assisted deposition dc sputtering system”, Solid-State Electronics, Vol. 46, pp. 477-480, 2002.
  8. Shui-Jinn Wang, Chao-Hsuing Chen, Shu-Cheng Chang, and Kai-Ming Uang, Chuan-Ping Juan and Huang-Chung Cheng, “Growth and characterization of tungsten carbide nanowires by thermal annealing of sputter-deposited WCx films”, Applied Physics Letters, Vol. 85, No. 12, pp. 2358-2360, 2004.
  9. Bor Wen Liou, Shu Cheng Chang, and Shui Jinn Wang, “Micro-structures of BF(2)(+) - and As(+) -implanted polycrystalline silicon thin films of various thicknesses and heat treatments”, Thin Solid Films, 473 pp. 321–327, 2005.
  10. Shui-JinnWang, Chao-Hsuing Chen, Shu-Cheng Chang, Chin-HongWong, Kai-Ming Uang, Tron-Min Chen, Rong-Ming Ko and Bor-Wien Liou, “On the thermal annealing conditions for self-synthesis of tungsten carbide nanowires fromWCx films”, Nanotechnology, Vol. 16, pp. 273–277, 2005.
  11. Shu-Cheng Chang, Shui-Jinn Wang, Kai-Ming Uang, and Bor-Wen Liou, “Design and fabrication of high breakdown voltage 4H-SiC Schottky barrier diodes with floating metal ring edge terminations”, Solid-State Electronics, Vol. 49, pp. 437-444, 2005.
  12. Kai-Ming Uang, Shui-Jinn Wang, Shiue-Lung Chen, Chin-Kun Wu, Shu-Cheng Chang, Tron-Min Chen, and Bor-Wen Liou, “High Power GaN-Based LEDs with Transparent Indium-Zinc-Oxide Films”, Jpn. J. Appl. Phys., Vol. 44, No. 4B, pp. 2516-2519, 2005.
  13. Bor Wen Liou, Shu Cheng Chang and Shui-Jinn Wang , “Hydrogen and oxygen plasma effects on the undoped and n-p compensation-doped single- and multi-layer polycrystalline silicon resistor films”, Jpn. J. Appl. Phys, Vol. 44, No. 5A, pp. 2929-2935, 2005.
  14. Shui-Jinn Wang, Kai-Ming Uang, Shiue-Lung Chen, Yu-Cheng Yang Shu-Cheng Chang, Tron-Min Chen, and Chao-Hsuing Chen, “Use of patterned laser lift-off process and electroplating nickel layer for the fabrication of vertical-structured GaN-based light-emitting diodes“, Applied Physics Letters , 87, 011111, 2005.
  15. Shui-Jinn Wang, Chao-Hsuing Chen, Rong-Ming Ko, Yi-Cheng Kuo, Chin-Hong Wong, and Chien-Hung Wu, Kai-Ming Uang, Tron-Min Chen, and Bor-Wien Liou, “Preparation of tungsten oxide nanowires from sputter-deposited WCx films using an annealing/oxidation process”, Applied Physics Letters, 86, 263103, 2005.
  16. Bor Wen Loiu_, Tron Min Chen, Chih Wei Chen, Kai Ming Uang and Shui-Jinn Wang, “High Power Silicon Schottky Barrier Diodes with Different Edge Termination Structures”, Jpn. J. Appl. Phys, Vol. 44, No. 40, pp. L 1244–L 1247, 2005.
  17. Shu-Cheng Chang, Shui-Jinn Wang, Kai-Ming Uang, Bor-Wen Liou, “Investigation of Au/Ti/Al ohmic contact to N-type 4H–SiC”, Solid-State Electronics, 49, pp. 1937-1941, 2005.
  18. P. H. Chang, N. C. Chen, Y. N. Wang, and C. F. Shih, M. H. Wu and T. H. Yang Y. H. Tzou and S. J. Wang, “Light-emitting diodes with nickel substrates fabricated by electroplating”, J. Vac. Sci. Technol. B 23, pp. L22-24, 2005.
  19. Chao-Hsuing Chen, Shui-Jinn Wang, Rong-Ming Ko, Yi-Cheng Kuo, Kai-Ming Uang, Tron-Min Chen, Bor-Wen Liou and Hao-Yi Tsai, “The influence of oxygen content in the sputtering gas on the self-synthesis of tungsten oxide nanowires on sputter-deposited tungsten films”, Nanotechnology, 17, pp. 217-223, January 2006.
  20. C. H. Wu, D. S. Yu, Albert Chin, S. J. Wang, M.-F. Li, C. Zhu, B. F. Hung, and S. P. McAlister, “High Work Function IrxSi Gates on HfAlON p-MOSFETs”, IEEE Electron Device Letters, Vol. 27, No. 2, pp.90- 92, February 2006.
  21. Kai-Ming Uang, Shui-Jinn Wang, Shiue-Lung Chen, Yu-Cheng Yang, Tron-Min Chen and Bor-Wen Liou, “Effect of Surface Treatment on the Performances of Vertical-structure GaN-based High-power LEDs with Electroplating Metallic Substrate”, Jpn. J. Appl. Phys, Vol. 45, No. 4B, pp. 3436-3441, April 2006.
  22. Shui-Jinn Wang, Shiue-Lung Chen, Kai-Ming Uang, Wei-Chi Lee, Tron-Min Chen, and Chao-Hsuing Chen, “The use of transparent conducting indium-zinc oxide film as a current spreading layer for vertical-structured high-power GaN-based light-emitting diodes”, IEEE Photonics Technology Letters, Vol. 18, pp. 1146-1148, 2006.
  23. C. H. Wu, B. F. Hung, Albert Chin, S. J. Wang, F. Y. Yen, Y. T. Hou, Y. Jin, H. J. Tao, S. C. Chen, and M. S. Liang, “HfAlON n-MOSFETs Incorporating Low Work Function Gate Using Ytterbium-Silicide”, IEEE Electron Device Letters, Vol. 27, No. 6, pp. 454- 456, June 2006.
  24. Shui-Jinn Wang, Tron-Min Chen, Kai-Ming Uang, Shiue-Lung Chen, Tung-Sheng Hsiao, Shu-Cheng Chang, Hon-Yi Kuo, and Bor-Wen Liou, “A Vertical-structured Ni/GaN Schottky Barrier Diode Using Electroplating Nickel Substrate”, Jpn. J. Appl. Phys., Vol. 45, No. 22, pp. L555 - L558, 2006.
  25. C. H. Wu, B. F. Hung, Albert Chin, S. J. Wang, F. Y. Yen, Y. T. Hou, Y. Jin, H. J. Tao, S. C. Chen, and M. S. Liang, “HfSiON n-MOSFETs Using Low Work Function HfSix Gate”, IEEE Electron Device Letters, Vol. 27, pp. 762-764, 2006.
  26. Kai-Ming Uang, Shui-Jinn Wang, Shiue-Lung Chen, Shu-Cheng Chang, Tron-Min Chen, Bor-Wen Liou, “The use of Transparent Indium-Zinc Oxide/(oxidized-Ni/Au) Ohmic Contact to GaN-based LEDs for Light Output Improvement”, Thin Solid Films, Vol. 515, pp. 2501–2506, December 2006.
  27. C. H. Lai, C. H. Wu, Albert Chin, S. J. Wang, and S. P. McAlister, “A Novel Quantum Trap MONOS Memory Device using AlN,” in Journal of The Electrochemical Society, Vol. 153, Number 8, G738-G741, 2006.
  28. Tron-Min Chen, Shui-Jinn Wang, Kai-Ming Uang , Shiue-Lung Chen, Wei-Chih Tsia, Wei-Chi Lee, and Ching-Chung Tsia, “Use of Anisotropic Laser Etching to the Top n-GaN Layer to Alleviate Current Crowding Effect in Vertical-Structured GaN-Based Light-Emitting Diodes”, Appl. Phys. Lett. 90, 041115, Jan, 2007.
  29. Shiue-Lung Chen, Shui-Jinn Wang, Kai-Ming Uang, Tron-Min Chen, Wei-Chi Lee, and Bor-Wen Liou, “Fabrication of Dicing-Free Vertical-Structured High Power GaN-Based Light-Emitting Diodes with Selective Nickel Electroplating and Patterned Laser Lift-Off Techniques”, accepted on Dec. 31, 2006, IEEE Photonics Technology Letters, Vol. 19, Issue 6, pp. 351–353, March15, 2007.
  30. B.F. Hung, C.H. Wu, A. Chin, S.J. Wang, F.Y. Yen, Y.T. Hou, Y. Jin, H.J. Tao, S.C. Chen, “HfLaON n-MOSFETs using a low work function HfSix gate”, IEEE Electron Device Letters, Vol. 28, pp. 1092-1094, 2007.
  31. M.W. Ma, C.H. Wu, T.Y. Yang, K.H. Kao, W.C. Wu, S.J. Wang, T.S. Chao, T. F. Lei, “Impact of high-k offset spacer in 65-nm node SOI devices”, IEEE Electron Device Letters, Vol.28, pp. 238-241, 2007.
  32. C.H. Wu, B.F. Hung, A. Chin, S.J. Wang, X.P. Wang, M.F. Li, C. Zhu, F.Y. Yen, Y.T. Hou, Y. Jin, H.J. Tao, S.C. Chen, M.S. Liang, “High Temperature Stable HfLaON p-MOSFETs with High Work Function Ir3Si Gate”, IEEE Electron Device Letters, Vol.28, pp. 292-294, 2007.
  33. Hon-Yi Kuo, Shui-Jinn Wang, Kai-Ming Uang, Tron-Min Chen, Pei-Ren Wang, Ching-Chung Tsai, and Hon Kuan, “A Sn-based Metal Substrate Technology for the Fabrication of Vertical-Structured GaN-Based Light-Emitting Diodes”, Applied Physics Letters, 92, 021105, 2008.
  34. Hon-Yi Kuo, Shui-Jinn Wang, Pei-Ren Wang, Kai-Ming Uang, Tron-Min Chen, Shiue-Lung Chen, Wei-Chi Lee, Hong-Kuei Hsu, Jui-Chiang Chou, and Chung-Han Wu ,“Use of Elastic Conductive Adhesive as the Bonding Agent for the Fabrication of Vertical Structure GaN-based LEDs on Flexible Metal Substrate”, IEEE Photonics Technology Letters, Vol. 20, No. 7, pp. 523-525 April 1, 2008.
  35. Tron-Min Chen, Shui-Jinn Wang, Kai-Ming Uang, Hon-Yi Kuo, Ching-Chung Tsai, Wei-Chi Lee, and Hon Kuan,” Current Spreading and Blocking Designs for Improving Light Output Power from the Vertical-Structured GaN-Based Light-Emitting Diodes”, IEEE Photonics Technology Letters, Vol. 20, pp. 703-705, 2008.
  36. Rong-Ming Ko, Shui-Jinn Wang, Zhi-Fu Wen, Jun-Ku Lin, Ga-Hong Fan, Wen-I Shu, and Bor-Wen Liou, “Development of Gas sensors based on tungsten oxide nanowires in a metal/SiO2/metal structure and their sensing responses to NO2”, Jpn. J. Appl. Phys, Vol. 47, pp. 3272-3276, 2008.
  37. C.F. Cheng, C.H. Wu, N.C. Su, S.J. Wang, S.P. McAlister, A. Chin,” High-work-function Ir/HfLaO p-MOSFETs using low-temperature-processed shallow junction”,IEEE Transactions On Electron Devices, Vol. 55, pp. 838-843, 2008.
  38. Wei-Chih Tsai, Shui-Jinn Wang, Chia-Lung Chang, Chao-Hsuing Chen, Rong-Ming Ko and Bor-Wen Liou, “Improvement of field emission characteristics of tungsten oxide nanowires by hydrogen plasma treatment,” Europhysics Letters, Vol. 84, pp. 16001, 2008.
  39. Wei-Chih Tsai, Jia-Chuan Lin, Kuo-Ming Huang, Po-Yu Yang, and Shui-Jinn Wang, “White light emissions from p-type porous silicon layers by high-temperature thermal annealing,” Europhysics Letters, Vol. 85, pp. 27002, 2009.
  40. Wei-Chih Tsai, Shui-Jinn Wang*, Jun-Ku Lin, Chia-Lung Chang, and Rong-Ming Ko, “Preparation of vertically-aligned nickel nanowires with anodic aluminum oxide templates and their application as field emitters,” Electrochemistry Communications, Vol. 11, pp. 660-663, 2009.
  41. Rong-Ming Ko, Shui-Jinn Wang, Wei-Chih Tsai, Bor-Wen Liou and Yan-Ru Lin, “The evolution of tungsten oxide nanostructures from nanowires to nanosheets”,CrystEngComm, 11, 1529–1531, 2009.
  42. Kai-Ming Uang, Shui-Jinn Wang, Tron-Min Chen, Wei-Chi Lee, Shiue-Lung Chen, Yu-Yu Wang, and Hon Kuan, “Enhanced Performance of Vertical GaN-Based Light-Emitting Diodes with a Current-Blocking Layer and Electroplated Ni Substrate”, Jpn. J. Appl. Phys., Vol. 48, 2009.
  43. N. C. Su, S. J. Wang*, and Albert Chin, “A Nonvolatile InGaZnO Charge-Trapping-Engineered Flash Memory With Good Retention Characteristics”, to appear in IEEE Electron Device Letters, Vol. 31 (3), pp. 201-203, 2010.
  44. N. C. Su, S. J. Wang*, and Albert Chin, “A Low Operating Voltage ZnO Thin Film Transistor Using a High-k HfLaO Gate Dielectric”, Electrochemical and Solid-State Letters, Vol. 13(1), H8-H11, 2010.
  45. Pei-Ren Wang, Shui-Jinn Wang*, Hon-Yi Kuo, Kai-Ming Uang, Tron-Min Chen2, Po-Hung Wang, Wei-Chi Lee, and Der-Ming Kuo, “A Screen Printed Sn-Based Dicing-Free Metal Substrate Technology for the Fabrication of Vertical-Structured GaN-Based Light-Emitting Diodes”, Japanese Journal of Applied Physics 49 (2010) 04DG10.
  46. Der-Ming Kuo, Shui-Jinn Wang*, Kai-Ming Uang, Tron-Min Chen, Wei-Chih Tsai, Wen-I Hsu, Wei-Chi Lee, Pei-Ren Wang, and Chih-Ren Tseng, “The Preparation of SiO2 Nanotubes with Controllable Inner/Outer Diameter and Length using Hydrothermally Grown ZnO Nanowires as Templates”, Japanese Journal of Applied Physics49 (2010) 04DN10.
  47. Nai-Chao Su, Shui-Jinn Wang*, Chin-Chuan Huang, Yu-Han Chen, Hao-Yuan Huang, Chen-Kuo Chiang, Chien-Hung Wu1, A. Chin, The Role of High-k TiHfO Gate Dielectric in Sputtered ZnO Thin Film Transistors“, Japanese Journal of Applied Physics 49 (2010) 04DA12.
  48. W. C. Lee, K. M. Uang, T. M. Chen, D. M. Kuo, P. R. Wang, C. R. Tseng, C. K. Wu, S. J. Wang*, “Enhanced Light Output of Vertical-Structured GaN-Based LEDs with Surface Roughening Using KrF Laser and ZnO Nanorods”, Japanese Journal of Applied Physics 49 (2010) 04DG12.
  49. D. M. Kuo, S. J. Wang*, K. M. Uang, T. M. Chen, H. Y. Kuo,W. C. Lee, and P. R. Wang, “Enhanced Performance of Vertical GaN-Based LEDs with Highly Reflective P-ohmic Contact and Periodic Indium-Zinc Oxide Nano-Wells”, IEEE PHOTONICS TECHNOLOGY LETTERS 22 (5), 338-340 (2010).
  50. Wei-Chi Lee, Shui-Jinn Wang, Kai-Ming Uang, Tron-Min Chen, Der-Ming Kuo, Pei-Ren Wang, and Po-Hong Wang, “Enhanced Light Output of GaN-Based Vertical-Structured Light-Emitting Diodes with Two-Step Surface Roughening using KrF Laser and Chemical Wet Etching”, to appear in IEEE Photonics Technology Letters,2010
  51. Su NC, Wang SJ*, Huang CC, Chen YH, Huang HY, Chiang CK, Chin A, “Low-Voltage-Driven Flexible InGaZnO Thin-Film Transistor With Small Subthreshold Swing”, IEEE ELECTRON DEVICE LETTERS 31 (7) pp. 680-682, 2010.
  52. Wei-Chi Lee, Shui-Jinn Wang*, Kai-Ming Uang, Tron-Min Chen, Der-Ming Kuo, Pei-Ren Wang, and Po-Hong Wang, “Enhanced Light Output of GaN-Based Vertical-Structured Light-Emitting Diodes with Two-Step Surface Roughening using KrF Laser and Chemical Wet Etching”, IEEE Photonics Technology Letters 22 (17) 1318-1320, 2010.
  53. Hau-Yuan Huang, Shui-Jinn Wang*, Chien-Hung Wu, Chen-Kuo Chiang, Yen-Chieh Huang, and Je-Yi Su, “Low Driving Voltage Amorphous In–Ga–Zn–O Thin Film Transistors with Small Subthreshold Swing Using High- Hf–Si–O Dielectrics”, Applied Physics Express 3 (2010) pp. 121501-1 - 121501-3.
  54. Der-Ming Kuo, Shui-Jinn Wang*, Kai-Ming Uang, Tron-Min Chen, Wei-Chi Lee, Pei-Ren Wang, “Enhanced Light Output of AlGaInP LEDs Using an Indium-Zinc Oxide Transparent Conduction Layer and Electroplated Metal Substrate”, Applied Physics Express 4 (2011) pp.012101-1 - 012101-3.
  55. Wei-Chi Lee, Shui-Jinn Wang*, Kai-Ming Uang, Tron-Min Chen, Der-Ming Kuo, Pei-Ren Wang, and P. H. Wang, “Surface Roughening with Superimposed Circular Protrusions and Hexagonal Cones to Enhance Light Output of GaN-Based Vertical Light-Emitting Diodes, Electrochemical and Solid-State Letters, 14 (2) (2011) H53-H56.
  56. Der-Ming Kuo, Shui-Jinn Wang, Kai-Ming Uang, Tron-Min Chen, Wei-Chi Lee, and Pei-Ren Wang, “Enhanced Light Output of Vertical GaN-Based LEDs with Surface Roughened by SiO2 Nanotube Arrays,” to be appeared in Electrochemical and Solid-State Letters 14 (2), H66-H68 (2011).
  57. Wei-Chi Lee, Kai-Ming Uang, Tron-Min Chen, Der-Ming Kuo, Pei-Ren Wang, Po-Hung Wang, and Shui-Jinn Wang*, “Enhanced Light Output of Vertical-structured GaN-Based Light-Emitting Diodes with TiO2/SiO2 Reflector and Roughened GaOx Surface Film”, to be appeared in Japanese Journal of Applied Physics (2011).
  58. Fu-Shou Tsai, Shui-Jinn Wang, Yung-Chun Tu, Yu-Wei Hsu, Chao-Yin Kuo, Zeng-Sing Lin, and Rong-Ming Ko, “Preparation of p-SnO/n-ZnO Heterojunction Nanowire Arrays and Their Optoelectronic Characteristics under UV Illumination”, Apply Physics Express 4 (2) (2011) 025002
  59. C. K. Chiang, C. H. Wu, C. C. Liu, J. F. Lin, C. L. Yang, J. Y.Wu, and S. J. Wang*, “Effects of La2O3 capping layers prepared by different ALD Lanthanum Precursors on Flatband Voltage Tuning and EOT scaling in TiN/HfO2/SiO2/Si MOS structures”, Journal of The Electrochemical Society, 158 (4), pp. H447-H451, 2011.
  60. Rong-Ming Ko, Shui-Jinn Wang*, Wei-Chou Hsu and Yan-Ru Lin, “From Metastable to Stable: Possible Mechanisms for the Evolution of W18O49 Nanostructures,CrystEngComm, 13 (12), pp. 4145 – 4150, 2011.
  61. Huang-Chung Cheng, Po-Yu Yang, Jyh-Liang Wang, Sanjay Agarwal, Wei-Chih Tsai, Shui-Jinn Wang, and I-Che Lee, “Zinc Oxide Thin-Film Transistors with Location-Controlled Crystal Grains Fabricated by Low-Temperature Hydrothermal Method”, IEEE Electron Device Letters 32 (4) pp. 497-499, 2011.
  62. W. C. Lee, S. J. Wang*, P. R. Wang, K. M. Uang, T. M. Chen, D. M. Kuo, and P. H. Wang, “Enhanced Performance of GaN-Based Vertical Light-Emitting Diodes with Circular Protrusions Surmounted by Hexagonal Cones and An Indium-Zinc Oxide Current Spreading Layer”, Applied Physics Express, 4, 072104, 2011.
  63. Shui-Jinn Wang*, Pei-Ren Wang, Der-Ming Kuo, Hsiun-Rong Kuo, and Jian-Shian Kuo1, “Improved Light Output of GaN-Based Vertical Light Emitting Diodes using SiO2 Nanotube Arrays and Transparent Metal Oxide Current Conduction Layer”, to appear in Applied Physics Letters, 2011.
  64. Chao-Yin Kuo, Rong-Ming Ko, Yung-Chun Tu, Yan-Ru Lin, Tseng-Hsing Lin, and Shui-Jinn Wang*,“Tip Shaping for ZnO Nanorods Via Hydrothermal Growth of ZnO Nanostructures in a Stirred Aqueous Solution”, to appear in Crystal Growth & Design, 2012.
  65. C. K. Chiang, C. H. Wu, C. C. Liu, J. F. Lin, C. L. Yang,J. Y. Wu, and S. J. Wang*“Comparison of Equivalent Oxide Thickness and Electrical Properties of Atomic Layer Deposited Hafnium Zirconate Dielectrics with Thermal or Decoupled Plasma Nitridation Process”, to appear in Electronic Materials Letters, 2012.
  66. Y. C. Huang, P. Y. Yang, H. Y. Huang, S. J. Wang*, and H. C. Cheng,“Effect of the Annealing Ambient on the Electrical Characteristics of the Amorphous InGaZnO Thin Film Transistors”, to appear in Journal of Nanoscience and Nanotechnology, 2012.
  67. P. Y. Yang, J. L.Wang, W. C. Tsai, Y. C. Chang, S. J. Wang*, I. C. Lee, Y. S. Chien, C. L. Wang, and H. C. Cheng,cHigh-Performance ZnO Thin-Film Transistors with Location-Controlled Crystal Grains Fabricated by Low-Temperature Hydrothermal Method”, to appear in Journal of Nanoscience and Nanotechnology, 2012.
  68. F. S. Tsai, S. J. Wang*, Y. C. Tu, and T. H. Lin,“Preparation and Characteristic of Relative-Humidity Sensors Based on Laterally Grown ZnO Nanowires”, to appear inJapanese Journal of Applied Physics;, 2013.
  69. Y. C. Tu, S. J. Wang*, and J. C. Lin, “Light Output Improvement of GaN-Based Light-Emitting Diodes Using Hydrothermally Grown ZnO Nanotapers”, to appear inJapanese Journal of Applied Physics, 2013.
  70. H. Y. Huang, S. J. Wang*, and C. H. Wu, “Performance tuning of InGaZnO thin-film transistors with a SnInGaZnO electron barrier layer”, to appear in Applied Physics Letters, 2013.
  71. Fu-Shou Tsaia and Shui-Jinn Wang*, “Enhanced sensing performance of relative humidity sensors using laterally grown ZnO nanosheets”, Sensors & Actuators: B. Chemical, 193, pp. 280-287, 2014.
  72. Yen-Chieh Huang, Fu-Shou Tsai, and Shui-Jinn Wang*, “Preparation of TiO2 Nanowire Arrays through Hydrothermal Growth method and their pH Sensing Characteristics”, to appear in Japanese Journal of Applied Physics, 2014.
  73. Hau-Yuan Huang, Shui-Jinn Wang*, Chien-Hung Wu and Chien-Yuan Lu, “Improvement of Electrical Performance of InGaZnO/HfSiO TFTs with 248-nm Excimer Laser Annealing”,accepted on March 3, 2014 and to appear in Electronics Materials Letters, 2014.
  74. Yung-Chun Tu, Shui-Jinn Wang*, Guan-Yu Lin, Tseng-Hsing Lin, Chien-Hsiung Hung, Fu-Shou Tsai, Kai-Ming Uang, and Tron-Min Chen, “Enhanced Light Output of Vertical GaN-Based LEDs with Surface Roughened by Refractive-Index-Matched Si3N4/GaN Nanowire Arrays”, accepted on March 1, 2014 and to appear in Applied Express Letter APEX, 2014.
  75. Hau Yuan Huang, Chien Hung Wu, Shui Jinn Wang and Kow Ming Chang, “High Mobility InGaZnO TFTs Using Atmospheric Pressure Plasma Jet Technique and 248 nm Excimer Laser Annealing”, to appear in Electronics Letters, April 2014.
  76. Huang, H. Y.; Wang, S. J.; Hung, C. H.; Wu, C. H.; Lin, W. C. (2014, Sep). InGaZnO metal-base transistor with high current gain. ELECTRONICS LETTERS, 50(20), 1465-1466.
  77. Tu, Yung-Chun; Wang, Shui-Jinn; Lin, Guan-Yu; Lin, Tseng-Hsing; Hung, Chien-Hsiung; Tsai, Fu-Shou; Uang, Kai-Ming; Chen, Tron-Min (2014, Apr). Enhanced light output of vertical GaN-based LEDs with surface roughened by refractive-index-matched Si3N4/GaN nanowire arrays. APPLIED PHYSICS EXPRESS, 7, 042101.
  78. Lin, Tseng-Hsing; Wang, Shui-Jinn; Tu, Yung-Chun; Hung, Chien-Hsiung; Lin, Che-An; Lin, Yung-Cheng;You, Zong-Sian (2015, May). Enhanced light emission in vertical-structured GaN-based light-emitting diodes with trench etching and arrayed p-electrodes. SOLID-STATE ELECTRONICS, 107, 30-34.
  79. Tu, Yung-Chun; Wang, Shui-Jinn; Lin, Tseng-Hsing; Hung, Chien-Hsiung; Tsai, Tsung-Che; Wu, Ru-Wen; Uang, Kai-Ming; Chen, Tron-Min (2015). Hydrothermal Growth of Quasi-Monocrystal ZnO Thin Films and Their Application in Ultraviolet Photodetectors. INTERNATIONAL JOURNAL OF PHOTOENERGY.
  80. Tu, Yung-Chun; Wang, Shui-Jinn; Wu, Chien-Hung; Chang, Kow-Ming; Lin, Tseng-Hsing; Hung, Chien-Hsiung; Wu, Jhen-Siang (2015). Improving Crystalline Silicon Solar Cell Efficiency Using Graded-Refractive-Index SiON/ZnO Nanostructures. INTERNATIONAL JOURNAL OF PHOTOENERGY.
會議論文( Conference )
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  1. S. C. Sun, H. Y. Tsai, and Shui Jinn Wang, “Refractory Metal Carbides Diffusion Barriers for Cu metallization” Proceeding of International Interconnect Technology Conference (IITC), San Francisco, USA, June 2001
  2. Shui-Jinn Wang, Shiue-Lung Chen, Kai-Ming Uang, Chin-Kun Wu, and Tron-Min Chen, “High Power GaN-Based LEDs with Transparent Indium-Zinc-Oxide Films”, International Conference on Solid State Devices and materials (SSDM'04), Tokyo, Japan, D-7-2, pp. 802-803, 2004.
  3. Shu-Cheng Chang, Shui-Jinn Wang, Kai-Ming Uang, Bor-Wen Liou, “Vertical-structured Ni/n-GaN Schottky Diode with Electroplating Nickel Substrate”, 63rd AnnualDevice Research Conference (DRC), University of California, Santa Barbara, Santa Barbara, CA, June 20 – 23, 2005.
  4. Shui-Jinn Wang, Shiue-Lung Chen, Kai-Ming Uang, Yu-Cheng Yang, Tron-Min Chen, and Bor-Wen Liou, “Effect of Surface Treatment on the performances of Vertical-structured GaN-based LEDs with Electroplating Metallic Substrate”, 63rd Annual Device Research Conference (DRC), University of California, Santa Barbara, Santa Barbara, CA, June 20 – 23, 2005.
  5. Shui-Jinn Wang, Chao-Hsuing Chen, Rong-Ming Ko, and Yi-Cheng Kuo, The Influence of Oxygen Concentration in the Sputtering Gas on the Self-synthesis of Tungsten Oxide Nanowires on Sputter-deposited Tungsten Films, International Conference on Solid State Devices and materials (SSDM'05), September 13-15, Kobe, Hyogo, Japan, 2005.
  6. Kai-Ming Uang, Shui-Jinn Wang, Shiue-Lung Chen, , Yu-Cheng Yang, Tron-Min Chen, and Bor-Wen Liou, Effect of Surface Treatment on the performances of Vertical-structur GaN-based High-power LEDs with Electroplating Metallic Substrate, International Conference on Solid State Devices and materials (SSDM'05), September 13-15, Kobe, Hyogo, Japan, 2005.
  7. D. S. Yu, Albert China, C. H. Wu, M.-F. Li, C. Zhu, S. J. Wang, B. F. Hung, and S. P. McAlister, “Lanthanide and Ir-based Dual Metal-Gate/HfAlON CMOS with Large Work-Function Difference”, 2005 International Electronic Device Meeting (IEDM), Washington, DC, December 5 - 7, 2005.
  8. Shui-Jinn Wang, Shiue-Lung Chen, Kai-Ming Uang, Wei-Chi Lee, Tron-Min Chen, Bor-Wen Liou and Su-Hua Yang, “Fabrication of High-Power Vertical GaN-Based Light-Emitting Diodes with Selective Nickel Electroplating and Patterned Laser Lift-Off Techniques”, 64th Annual Device Research Conference (DRC), The Pennsylvania State University, University Park, PA on July 26-28, 2006.
  9. Shui-Jinn Wang, Tron-Min Chen, Kai-Ming Uang, Shiue-Lung Chen, Ching-Chung Tsai, Bor-Wen Liou, and Su-Hua Yang, “Use of anisotropic laser etching and transparent conducting layer to alleviate current crowding effect in a Vertical-structure GaN-based Light-emitting Diode”, an oral presentation, 64th Annual Device Research Conference (DRC), The Pennsylvania State University,University Park, PA on July 26-28, 2006.
  10. Tron-Min Chen, Shui-Jinn Wang, Kai-Ming Uang, Shiue-Lung Chen, Ching-Chung Tsai, Hon-Yi Kou, Wei-Chi Lee, and Hon Kuan, “High Power Vertical-structure GaN-based LEDs with Improved Current Spreading and Blocking Designs”, 65th Annual Device Research Conference (DRC), The University of Notre Dame, South Bend, IN, June 18-20, 2007.
  11. Nai-Chao Su, Chien-Hung Wu, Shui-Jinn Wang*, Chen-Kuo Chiang, and Ching-Cheng Cheng , “Robust High- nHfOxNy n-MOSFETs Using Low Work Function TbN Gate”, (poster) 2007 International Conference on Solid State Devices and materials (SSDM'07), Tsukuba International Congress Center, Ibaraki, Japan, September 18-21,2007.
  12. Rong-Ming Ko, Zhi-Fu Wen, Shui-Jinn Wang, Jun-Ku Lin, Ga-Hong Fan, Wen-I Shu, and Bor-Wen Liou, “Development of gas sensors based on tungsten oxide nanowires in a metal/SiO2/metal structure and their sensing responses to NO2”, (oral) 2007 International Conference on Solid State Devices and materials (SSDM'07), Tsukuba International Congress Center, Ibaraki, Japan, September 18-21,27
  13. Hon-Yi Kuo, Shui-Jinn Wang, Kai-Ming Uang, Shiue-Lung Chen, Tron-Min Chen, Pei-Ren Wang, Ching-Chung Tsai, and Hon Kuan, “A Novel Sn-based Metal Substrate Technology for the Fabrication of Vertical-Structure GaN-Based High Power Light-Emitting Diodes”, (oral) 2007 International Conference on Solid State Devices and materials (SSDM'07), Tsukuba International Congress Center, Ibaraki, Japan, September 18-21,2007.
  14. Shui-Jinn Wang, Tron-Min Chen, Kai-Ming Uang, Ching-Chung Tsai1, Wei-Chi Lee1, and Hon-Yi Kou, “A Novel Current Spreading and Blocking Design to Enhance Light emission Uniformity and light output power of Vertical-structure GaN-based LEDs”, The First International Conference on White LEDs and Solid State Lighting, 26-30th, November, 2007, Tokyo, Japan.
  15. Shui-Jinn Wang, Kai-Ming Uang, Tron-Min Chen, Chih-Chen Lai, Wei-Chi Lee, Hon-Yi Kou, and Hon Kuan, “Use of Micro-Etching Array to Enhance the Light Output Power of Vertical-Structure GaN-Based Light-Emitting Diodes”, The First International Conference on White LEDs and Solid State Lighting, 26-30th, November, 2007, Tokyo, Japan.
  16. Wei-Chih Tsai, Shui-Jinn Wang*, Jun-Ku Lin, Chia-Lung Chang, and Rong-Ming Ko “Preparation of Vertical-Aligned Nickel Nanowires and its Electron Field Emission Characteristics”, 2008 Electronic Materials Conference (EMC08), Santa Barbara, CA, USA. June 25-27, 2008.
  17. Rong-Ming Ko, Ga-Hong Fan, Bor-Wen Liou, and Wei-Chih Tsai, and Shui-Jinn Wang*, “Use of Current Fusing Method for the Fabrication of Nano Gaps with Self-Synthesized Tungsten-Based Nanowires”, 2008 Electronic Materials Conference, Santa Barbara, CA, USA. June 25-27, 2008.
  18. Wei-Chi Lee, Kai-Ming Uang, Der-Ming Kuo, Jui-Chiang Chou, Tron-Min Chen, Hon-Yi Kuo, and Shui-Jinn Wang*, “Use of Highly Reflective Ohmic Contact and Surface KrF Laser Roughening to Improve Light output of Vertical GaN-Based Light-Emitting Diodes”, 66th Device Research Conference, (DRC08) University of California, Santa Barbara, CA, USA, June 23-25, 2008.
  19. Pei-Ren Wang, Shui-Jinn Wang*, Kai-Ming Uang2, Tron-Min Chen, Fu-Tze Tang, Hon-Yi Kuo, and Hon Kuan,“A Fast Sapphire Substrate Surface Roughening Technology using CO2 Laser for Enhancing Light Extraction of GaN-based Flip-Chip Light-Emitting Diodes”, (poster) 2008 International Conference on Solid State Devices and materials (SSDM'08), Tsukuba International Congress Center, Ibaraki, Japan, September 23-26,2008.
  20. Kai-Ming Uang, Tron-Min Chen, Wei-Chi Lee, Pei-Ren Wang, Der-Ming Kuo,Yu-Yu Wang, Shui-Jinn Wang*, and Hon Kuan,“Use of Current-Blocking Layer to Enhance Performance of Vertical GaN-based Light-Emitting Diodes with a Ni-Plating Substrate”, (poster) 2008 International Conference on Solid State Devices and materials (SSDM'08), Tsukuba International Congress Center, Ibaraki, Japan, September 23-26,2008.
  21. Hon-Yi Kuo, Wei-Chi Lee, Shui-Jinn Wang*, Kai-Ming Uang, Tron-Min Chen, Jui-Chiang Chou, and Hon Kuan, ”Use of Aluminum-Doped Zinc-Oxide Film as a Strain-Relief and Schottky Blocking Layer for the Fabrication of Vertical Structure Metal Substrate GaN-based Light-Emitting Diodes”, (oral) 2008 International Conference on Solid State Devices and materials(SSDM'08), Tsukuba International Congress Center, Ibaraki, Japan, September 23-26,2008.
  22. Jia-Chuan Lin, Wei-Chih Tsai, Kuo-Ming Huang and Shui-Jinn Wang, “Porous Silicon Fabrication for Visible Light Emissions and its White Light Responses” International Conference on Solid State Devices and Materials (SSDM 2008), Yokohama, Japan, 2008.
  23. Jia-Chuan Lin, Wei-Chih Tsai, Hsi-Ting Hou and Shui-Jinn Wang, “A Maskless Method of Patterned Porous Silicon Formation by a Localized Electrical Field” International Conference on Solid State Devices and Materials (SSDM 2008), Yokohama, Japan, 2008.
  24. Wei-Chih Tsai, Shui-Jinn Wang, Chih-Ren Tseng, Rong-Ming Kuo, and Jia-Chuan Lin, “Preparation of Ni/Zn and NiO/ZnO heterojunction nanowires and their optoelectrical characteristics,” 2009 Europe Optics and Optoelectronics (EOO), Prague, Czech Republic, 2009.
  25. Wei-Chih Tsai, Shui-Jinn Wang, Chih-Ren Tseng, Rong-Ming Kuo, and Jia-Chuan Lin, “Preparation and optoelectronic properties of NiO/ZnO heterostructure nanowires,” 2009 Europe Optics and Optoelectronics (EOO), Prague, Czech Republic, 2009.
  26. Wen-I Hsu, Shui-Jinn Wang, Wei-Chih Tsai, Chih-Ren Tseng, and Wen-Chu Hsu, “Pressure and UV light sensitive electron field emission properties of lateral ZnO nanowires with an emitter-to-emitter configuration,” 67th Device Research Conference, (DRC09) Penn State University, University Park, PA, USA, June 22-24
  27. Wei-Chih Tsai, Shui-Jinn Wang, Chih-Ren Tseng, Wen-I Hsu, and Jia-Chuan Lin, “Preparation of ZnO nanowires/p-GaN nanoheterojunction arrays and their optoelectric characteristics under UV and solar lights,” 67th Device Research Conference, (DRC09) Penn State University, University Park, PA, USA, June 22-24
  28. Wei-Chih Tsai, Shui-Jinn Wang, Jia-Chuan Lin, Chih-Ren Tseng, Fu-Shou Tsai, and Wen-I Hsu, “Preparation of NiO/ZnO nanoheterojunction arrays and their optoelectric characteristics under UV light illumination,” International Conference on Solid State Devices and Materials (SSDM 2009), Sendai Kokusai Hotel, Miyagi, Japan, October 7-9, 2009.
  29. Wen-I Hsu, Shui-Jinn Wang, Wei-Chih Tsai, Wen-Chu Hsu, Fu-Shou Tsai and, and Hau-Yuan Huang, “Enhanced Visible Light and Electron Field Emission of Porous Silicon Nanowires,” International Conference on Solid State Devices and Materials (SSDM 2009), Sendai Kokusai Hotel, Miyagi, Japan, October 7-9, 2009.
  30. Der-Ming Kuo, Shui-Jinn Wang, Kai-Ming Uang, Wei-Chih Tsai,Wen-I Hsu, Wei-Chi Lee, Pei-Ren Wang, Chih-Ren Tseng, “The Preparation of SiO2 Nanotubes with Controllable inner/outerDiameter and Length using Hydrothermally Grown ZnO Nanowires,” International Conference on Solid State Devices and Materials (SSDM 2009), Sendai Kokusai Hotel, Miyagi, Japan, October 7-9, 2009.
  31. Nai-Chao Su, Chin-Chuan Huang, Yu-Han Chen, Chen-Kuo Chiang, Hao-Yuan Huang, Chien-Hung Wu, Abert Chin, Shui-Jinn Wang,, “High Performance ZnO Thin-Film Transistors Using High-κ TiHfO Gate Dielectrics,” International Conference on Solid State Devices and Materials (SSDM 2009), Sendai Kokusai Hotel, Miyagi, Japan, October 7-9, 2009.
  32. Chen-Kuo Chiang, Yu-Han Chen, Nai-Chao Su, Shui-Jinn Wang, Chin-Chuan Huang, Hao-Yuan Huang, Chien-Hung Wu, “Trap Profile and Bias Temperature Instability of ALD-HfSiON Gate Stacks in Advanced MOSFETs,” International Conference on Solid State Devices and Materials (SSDM 2009), Sendai Kokusai Hotel, Miyagi, Japan, October 7-9, 2009.
  33. W. C. Lee, K. M. Uang, T. M. Chen, D. M. Kuo, P. R. Wang, C. R. Tseng, C. K. Wu, Shui-Jinn Wang, “Enhanced Light Output of Vertical-Structured GaN-Based LEDs with Surface Roughening using KrF Laser and ZnO Nanorods,” International Conference on Solid State Devices and Materials (SSDM 2009), Sendai Kokusai Hotel, Miyagi, Japan, October 7-9, 2009.
  34. P. R. Wang, P. H. Wang, H. Y. Kuo, K. M. Uang, T. M. Chen, D. M. Kuo, Shui-Jinn Wang, “A Screen Printed Sn-Based Dicing-Free Metal Substrate Technology for the Fabrication of Vertical-Structured GaN-Based Light-Emitting Diodes” International Conference on Solid State Devices and Materials (SSDM 2009), Sendai Kokusai Hotel, Miyagi, Japan, October 7-9,29
  35. Der-Ming Kuo, Kai-Ming Uang, Tron-Min Chen, Wei-Chi Lee, Pei-Ren Wang, Zhong-Han Wu, and Shui-Jinn Wang*, "Enhanced performance of vertical GaN-based LEDs with highly reflective ohmic contact and nano-roughened indium-zinc oxide surface using a nanospheres process," SPIE PHOTONIC WEST (oral), 7617-27, Francisco, California, USA. Jan. 27, 2010.
  36. Wei-Chi Lee, Kai-Ming Uang, Tron-Min Chen, Der-Ming Kuo, Pei-Ren Wang, and Shui-Jinn Wang, " Surface roughness of gallium nitride with volcano-like protrusions formed by KrF excimer laser etching," SPIE PHOTONIC WEST (oral), 7617-26, Francisco, California, USA. Jan. 27, 2010.
  37. Hau-Yuan Huang, Yen-Chieh Huang, Je-Yi Su, Nai-Chao Su, Chen-Kuo Chiang, Chien-Hung Wu, and Shui-Jinn Wang*, “High Performance and Low Driving Voltage Amorphous InGaZnO Thin-Film Transistors Using High- HfSiO Dielectrics,” 68th Device Research Conference (oarl), (DRC10) University of Notre Dame, South Bend, IN, USA, June 21-23, 2010.
  38. C.K. Chiang, H.Y. Huang, C.H. Wu, J.F. Lin, C.C. Liu, C.L. Yang, J.Y. Wu, and S.J. Wang*, “Flatband Voltage Tuning and EOT Reduction for SiO2/HfO2/TiN Gate Stacks via Lanthanum Oxide Capping Layers using Two Different Lanthanum Precursors,” 68th Device Research Conference, (DRC10) University of Notre Dame, South Bend, IN, USA, June 21-23, 2010.
  39. Wen-Chu Hsu, Rong-Ming Ko, Zeng-Sing Lin, and Shui-Jinn Wang*, “Preparation and characterization of a bottom-gate field emission triode based on laterally-grown ZnO nanowires,” (oral) The 6th International Workshop on Zinc Oxide and Related Materials, Changchun, China, Aug. 5, 2010.
  40. Wei-Chi Lee, Kai-Ming Uang, Tron-Min Chen, Der-Ming Kuo, Pei-Ren Wang, Po-Hong Wang, and Shui-Jinn Wang*, “Enhanced Light Output of Vertical GaN-Based Light-Emitting Diodes with a Distributed Bragg Reflector and a Roughened GaOx Surface Film,” (oral) International Conference on Solid State Device and materials (SSDM 2010), Tokyo, Japan, Sep. 22-24,210
  41. Der-Ming Kuo, Shui-Jinn Wang*, Kai-Ming Uang, Tron-Min Chen, Wei-Chi Lee, and Pei-Ren Wang, “:Enhanced Light Output of Vertical GaN-Based LEDs with Surface Roughening Using SiO2 Nanotube Arrays,” International Conference on Solid State Device and materials (SSDM 2010), Tokyo, Japan, Sep. 22-24, 2010.
  42. Po-Hung Wang, Shui-Jinn Wang*, Kai-Ming Uang, Tron-Min Chen, Pei-Ren Wang, Tzyy-Chuan Wang, and Rong-Ming Ko, “Enhanced Efficiency of ZnO Nanowires Based Dye-Sensitized Solar Cells with Hetrosensitizer,” International Conference on Solid State Device and materials (SSDM 2010) Tokyo, Japan, Sep. 22-24, 2010.
  43. Chao-Yin Kuo, Shui-Jinn Wang*, Wen-I Hsu, Fu-Shou Tsai, Rong-Ming Ko, and Wen-Chu Hsu, “Tip engineering of hydrothermally grown ZnO nanorods and its application in low-voltage operable field emitters,” International Conference on Solid State Device and materials (SSDM 2010), Tokyo, Japan, Sep. 22-24, 2010.
  44. Pei-Ren Wang, Shui-Jinn Wang*, Kai-Ming Uang, Tron-Min Chen, Wei-Chi Lee, and Der-Ming Kuo, “Improved Current Spreading and Blocking Designs for High-Power Vertical-Structure GaN-Based LEDs,” 218th Electrochemical Society (ECS) Meeting, Las Vegas, USA, Oct. 10-15, 2010.
  45. Der-Ming Kuo, Shui-Jinn Wang*, Kai-Ming Uang, Tron-Min Chen,Wei-Chi Lee, and Pei-Ren Wang, “Enhanced Light Output of n-side-up AlGaInP LEDs Using Indium-Zinc Oxide Film Transparent Conduction Layer,” 218th Electrochemical Society (ECS) Meeting, Las Vegas, USA, Oct. 10-15, 2010.
  46. Po-Hung Wang, Shui-Jinn Wang*, Kai-Ming Uang, Tron-Min Chen, Tzyy-Chuan Wang, “Synthesis of Single-crystal Rutile TiO2 Nanowire Arrays on a Sputtered TiO2 Seed Layer,” 218th Electrochemical Society (ECS) Meeting, Las Vegas, USA, Oct. 10-15, 2010.
  47. Fu-Shou Tsai, Shui-Jinn Wang*, Yung-Chun Tu, Wen-Chu Hsu, Chao-Yin Kuo, Der-Ming Kuo, and Rong-Ming Ko, “Use of ZnO nanowires and surface roughening to enhance the sensitivity of thin-film-type ZnO ultraviolet sensors,” 218th Electrochemical Society (ECS) Meeting, Las Vegas, USA, Oct. 10-15, 2010.
  48. Fu-Shou Tsai, Shui-Jinn Wang*, Yung-Chun Tu, Yu-Wei Hsu, Chao-Yin Kuo, and Rong-Ming Ko, “Preparation of SnO/ZnO nano heterojunction arrays and its optoelectronic response to UV illuminations,” 23rd International Microprocesses and Nanotechnology Conference (MNC 2010) (oral), Rihga Royal Hotel Kokura, Fukuoka, Japan, Nov. 9-12, 2010.
  49. Fu-Shou Tsai, Shui-Jinn Wang*, Yung-Chun Tu, Yu-Wei Hsu, and Chao-Yin Kuo, “Ultraviolet sensors based on laterally-grown ZnO nanowires,” 23rdInternational Microprocesses and Nanotechnology Conference (MNC 2010), Rihga Royal Hotel Kokura, Fukuoka, Japan, Nov. 9-12, 2010.
  50. C.K. Chiang, J.C. Chang, W.H. Liu, C.C. Liu, J.F. Lin, C.L. Yang, J.Y. Wu, and S.J. Wang*, “Investigation of the structural and electrical characterization on ZrO2addition for ALD HfO2 with La2O3 capping layer integrated metal-oxide semiconductor capacitors”, The 22nd Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2011), Saratoga Hilton, Saratoga Springs,NY, May 16 -18, 2011.
  51. Yun-Shan Chien, Po-Yu Yang, Shui-Jinn Wang, Der-Ming Kuo, Pei-Ren Wang, Yi-Ming Chen, and Huang-Chung Cheng, “The Effect of KrF Laser Annealing on the Au/GeAuNi/Au Contact Resistance of n-Type GaAs Based Light Emitting Diode,” NANO KOREA Symposium 2011, Seoul, Korea, August24~26, 2011.
  52. Zeng-Sing Lin, Fu-Shou Tsai, Yung-Chun Tu, Rong-Ming Ko, and Shui-Jinn Wang, “Low voltage operable field emission triodes with high transconductance based on laterally grown ZnO nanowires”, (oral), 2011 International Conference on Solid State Device and materials (SSDM 2011), Nagoya, Japan, September 28-30, 2011.
  53. P. R. Wang, S. J. Wang, D. M. Kuo, C. H. Kuo, H. R. Kuo, T. S. Lin, and P. H. Wang, “Enhanced Light Output of Vertical GaN-Based LEDs with Surface Roughening Using IZO Nano Roughened ”, (poster), 2011 International Conference on Solid State Device and materials (SSDM 2011), Nagoya, Japan, September 28-30, 2011.
  54. C. K. Chiang, C. H. Wu,H. Y. Huang, J. F. Lin, C. L. Yang, J. Y. Wu, and S. J. Wang, “Impact of Zirconia addition for ALD Hafina in HKMG Device Fabricated GF vs. GL”, (poster), 2011 International Conference on Solid State Device and materials (SSDM 2011), Nagoya, Japan, September 28-30, 2011.
  55. Fu-Shou Tsai, Shui-Jinn Wang*, Yung-Chun Tu, and Jia-Ching Lin, “Preparation and Characteristic of Room Temperature Ethanol Sensor based on Laterally Oriented ZnO Nanowires”, 24th International Microprocesses and Nanotechnology Conference (MNC 2011), ANA Hotel Kyoto, Kyoto, Japan, November 9-12, 2011.
  56. Yung-Chun Tu, Shui-Jinn Wang*, Fu-Shou Tsai, Yu-Wei Hsu, Jia-Ching Lin, and Shang-I Tsai, “Preparation of p-CuO/n-ZnO Nanowire with PMMA coating Heterojunction Arrays and Their Optoelectronic Characteristics”, 24th International Microprocesses and Nanotechnology Conference (MNC 2011), ANA Hotel Kyoto, Kyoto, Japan, November 9-12, 2011.
  57. Yung-Chun Tu, Shui-Jinn Wang*, Jia-Ching Lin, Fu-Shou Tsai, Tseng-Hsing Lin, and Pei-Ren Wang, "Preparation and characteristic of relative humidity sensors based on laterally grown ZnO nanowires using hydrothermal method", 25th International Microprocesses and Nanotechnology Conference
  58. Tseng-Hsing Lin, Yung-Chun Tu, Yu-Wei Hsu, Pei-Ren Wang, Fu-Shou Tsai, and Shui-Jinn Wang*, "Preparation of patterned ZnO nanowires arrays using porous PMMA templates for the improvement of light output power of GaN based LEDs", 25th International Microprocesses and Nanotechnology Conference.
  59. Rong-Ming Ko, Ming-Yueh Chuang, Chih-Hung Hsiao, Shui- Jinn Wang*, "Controllable hydrothermal growth of ZnO nanorods/nanosheets on Ga-face GaN epilayer with a two-step etching", International Workshop on Nitride Semiconductors.
  60. C. K. Chiang, J. C. Chang, W. H. Liu, C. C. Liu, J. F. Lin, C. L. Yang, J. Y. Wu, and S. J. Wang*, "A comparative study of gate stack material properties and reliability characterization in MOS transistors with optimal ALD Zirconia addition for Hafina gate dielectric", IEEE International Reliability Physics Symposium.
  61. S. J. Wang*, "High power GaN", 2012 Electronic Technology Symposium.
  62. Yen-Chieh Huang, Fu-Shou Tsai, Shui-Jinn Wang*, "Preparation of grass-like TiO2 Nanowire arrays and theirs application on pH sensors", International Electron Devices and Materials Symposium.
  63. Fu-Shou Tsai, Shui-Jinn Wang*, Yung-Chun Tu, Tseng-Hsing Lin, "Enhanced relative humidity sensing performance of laterally grown ZnO nanosheets", 26th International Microprocesses and Nanotechnology Conference.
  64. Fu-Shou Tsai, Shui-Jinn Wang*, Yen-Chieh Huang, "Preparation of TiO2 Nanowire Arrays and Theirs pH Sensing Characteristics", 26th International Microprocesses and Nanotechnology Conference.
  65. Tseng-Hsing Lin, Yung-Chun Tu, Guan-Yu Lin, Yi-Wen Lo, Ru-Wen Wu, and Shui-Jinn Wang*, "Enhanced Light Output of Vertical GaN-Based LEDs with Surface Roughened by refractive-index-matched Si3N4/GaN nanowire Arrays", 26th International Microprocesses and Nanotechnology Conference.
  66. H. Y. Tsai, Shui Jinn Wang, and S. C. Sun, “Investigation of Sputtered TaCx and WCx as diffusion barriers for Cu metallization”, International Symposium onVLSI Technology, System, and Applications, Hsinchu, Taiwan, April 18-20, 2001.
  67. Hao Yi Tsai, Shui Jinn Wang, and Shi. Chung. Sun, “Properties of Sputtered Titanium Carbide Film as Diffusion Barrier for Copper Metallization”, Symposium on Nano Device Technology (SNDT), Hsinchu, April, 2001
  68. 王淑如、張書誠、汪楷茗、王水進,”利用陽極氧化法進行MIS結構超薄SiO2與TiO2介電材料製備之研究”,電子元件暨材料研討會,800頁,2001年12月。
  69. Shu-Cheng Chang, Yuan-Hsin Tzou, Kai-Ming Uang, Shu-Ru Wang, Shui-Jinn Wang, Nie-Chuan Chen and Bor-Jen Wu, “Investigation of Electroplating Nickel Substrate for AlGaInP Light-Emitting Diodes”, Proceeding of Optics and Photonics Taiwan ‘01, pp. 120-122, 2001.
  70. Kai-Ming Uang, Zen-Gon Wen, Shu-Cheng Chang, Shu-Ru Wang, and Shui-Jinn Wang, “On the Recrystallization of a-Si for Low-Temperature Poly-Si Thin Film Transistor”, Proceeding of Optics and Photonics Taiwan ‘01, pp. 65-67, 2001.
  71. Kai-Ming Uang, Shiue-Lung Chen, Kuo-Feng Hsu, and Shui-Jinn Wang, “A Study of Transparent Indium Zinc Oxide Contact to n-AlGaInP Layers for High Brightness LEDs”, Proceeding of Optics and Photonics Taiwan ‘02, pp. 103-105, 2002.
  72. Shui-Jinn Wang, Shu-Cheng Chang, Jr-Hua Liu, Jun-Rui Huang, Kai-Ming Uang, Ming-Jinn Tsai, and Chih-Wei Hsu, “Simulation and Design of Edge Termination for 4H-SiC High Voltage (>1000 V) Schottky Barrier Diodes”, Proceedings of the 2002 International Electron Devices and Materials Symposium (IEDMS2002),Taipei,Taiwan, December 20-21, 2002
  73. Hui-Hung Lin and Shui-Jinn Wang, “The Use of a Low/High Porosity Structure and Boron Diffusion to Improve the Electrical Properties of Metal/Porous Si/SiDiodes”, Proceedings of the 2002 International Electron Devices and Materials Symposium (IEDMS 2002), Taipei, Taiwan, December 20-21, 2002
  74. Kai-Ming Uang, Shiue-Lung Chen, Chin-Kun Wu, Shu-Cheng Chang, Shui-Jinn Wang, and Bor-Wen Liu, “Light Extraction Improvement in GaN-Based LED susing Transparent Indium-Zinc-Oxide films”, 鍍膜科技研討會, Taipei, July, 2003.
  75. Shiue-Lung Chen, Kai-Ming Uang, Chin-Kun Wu, Shu-Cheng Chang, Shui-Jinn Wang, and Bor-Wen Liu, “The use of Indium-Zinc-Oxide Films as a Transparent Conduction Layer for the fabrication of GaN-based LEDs”, Proceedings of the 2003 Electron Devices and Materials Symposium (EDMS 2003), Taipei, Taiwan,November,2003
  76. 張書誠、劉智華、許智明、黃俊瑞、汪楷茗、王水進、劉博文,”高電壓碳化矽蕭基二極體之研製及特性研究”,電力工程研討會,2003年12月。
  77. Chao-Hsuing Chen, Shui-Jinn Wang, Rong-Ming Ko and Yi-Cheng Kuo, “Self-Synthesis of High Density and Well Crystalline Tungsten Oxide Nanowires on Tungsten Films”, 2005電子元件暨材料研討會(EDMS2005), 高雄義守大學,Nov 24-25, 2005.
  78. Shiue-Lung Chen, Shui-Jinn Wang, Kai-Ming Uang, Wei-Chi Lee, Tron-Min Chen, and Bor-Wen Liou, “The use of transparent indium-zinc oxide film as current spreading layer for vertical-structured high power GaN-based light-emitting diodes”, 2005電子元件暨材料研討會(EDMS2005), 高雄義守大學,Nov 24-25,2005
  79. Kai-Ming Uang, Shui-Jinn Wang, Shiue-Lung Chen, Wei-Chi Lee, Tron-Min Chen1,2, and Bor-Wen Liou, “Fabrication of N-Side-Up Vertical-Sructure GaN-Based Light-Emitting Diodes with an Electroplating Nickel Substrate”, OPT2005,台灣光電科技研討會,國立成功大學,Dec. 9-10, 2005.
  80. Rong-Ming Ko, Shui-Jinn Wang, Chao-Hsuing Chen, Yi-Cheng Kuo, Chia-Lung Chang and Zhi-fu Wen, “Influence of carbon content on the self-synthesis of W-based nanowires from sputter-deposited WCx films”, 2006奈米元件技術研討會(SNDT2006),No. T3-23,國家奈微米中心(NDL),新竹,台灣,April 26-28, 2006.
  81. Shui-Jinn Wang, Shiue-Lung Chen, Kai-Ming Uang, Wei-Chi Lee, Tron-Min Chen, Bor-Wen Liou and Su-Hua Yang, “Fabrication of High-Power Vertical GaN-Based Light-Emitting Diodes with Selective Nickel Electroplating and Patterned Laser Lift-Off Techniques”, 64th Annual Device Research Conference (DRC),The Pennsylvania State University, University Park, PA on July 26-28, 2006.
  82. 蔡維志, 林俊谷, 柯榮明, 王水進, 黃金川, “利用氫電漿改善氧化鎢奈米線電子場發射特性之研究,” The 6th Cross-Strait Workshop on Nano Science and Technology, Taiwan, 2008.
  83. 柯榮明、王水進、范佳宏、蔡維志、王培任, “利用電流熔斷法製備具短間距之氧化鎢奈米線側向場發射元件,” The 6th Cross-Strait Workshop on Nano Science and Technology, Taiwan, 2008.
  84. Wei-Chih Tsai, Chia-Lung Chang, Rong-Ming Ko, and Shui-Jinn Wang, “Field Emitters with Vertical-Aligned Tungsten Oxide Nanowires and Anodic Aluminum Oxide Templates,” 2008 Symposium on Nano Device Technology (SNDT 2008), Taiwan, 2008.
  85. Wei-Chih Tsai, Jun-Ku Lin, Wen-I Hsu, Rong-Ming Ko, Chih-Ren Tseng, and Shui-Jinn Wang, “Fabrication and Characterization of Nickel Nanowires prepared by Electrodeposition using Anodic Aluminum Oxide Templates,” 2008 International Electron Devices and Materials Symposia (IEDMS 2008), Taiwan, 2008.
  86. Wen-I Hsu, Wei-Chih Tsai, Rong-Ming Ko, and Shui-Jinn Wang, “Field Emission from Single-Crystalline Silicon Nanowires prepared with Metal-Induced Etching,” 2008 International Electron Devices and Materials Symposia (IEDMS 2008), Taiwan, 2008.
  87. Chao-Yin Kuo, Fu-Shou Tsai, Rong-Ming Ko, Wen-I Hsu, Yen-Chieh Huang, Zeng-Sing Lin, Tzyy-Chuan Wang and Shui-Jinn Wang*, “A field emission type room temperature hydrogen sensor based on laterally-grown ZnO nanotubes”, 2011 Electronic Technology Symposium (ETS 2011) (2011年電子工程技術研討會),義守大學,June 10, 2011。
  88. S. J. Wang, “The Preparation of Size-Controllable SiO2 Nanotubes and Its Applications on Optoelectronic Devices”, (invited talk), 2011 Symposium on Nano Device and Technology (2011 SNDT-2011奈米元件技術研討會),新竹國家奈米實驗室,April 21-22, 2011.
  89. C. K. Chiang, C. H. Wu, H. Y. Huang and S. J. Wang*, “Effects of spatial Zirconia incorporation in Atomic Layer Deposition Lanthanum Oxide Capped Hafina Metal-Oxide-Silicon capacitors”, 2011 Electronic Technology Symposium (ETS 2011) (2011年電子工程技術研討會),義守大學,June 10, 2011。
專利
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  1. 王水進、陳柏宗,「可移動式高溫消毒負壓隔離艙」,中華民國專利,發明第I 233799號,專利期限:2005/6/11-2023/10/2,94年6月11日。
  2. 王水進、陳昭雄,「自行合成式碳化鎢奈米線之製備方法」,中華民國專利,發明第I 253386號,專利期限:2006/4/21-2025/1/18。
  3. 王水進、陳昭雄,「氧化鎢奈米線之製造方法」,發明第I 257380號,專利期限:2006/7/1-2025/6/20。
  4. 王水進、林水木,「發光二極體車燈」,發明第I 252898號。專利期限:,2006/04/11。
  5. 王水進、林水木,「具有發光二極體之散熱系統」,發明第I 244777號。
  6. 王水進、楊於錚、汪楷茗、陳學龍,「一種可同時定義出氮化鎵磊晶晶方之藍寶石基板雷射剝離法」,中華民國專利申請中,94年10月。
  7. 王水進、陳聰敏、汪楷茗、陳學龍,「一種有效改善發光二極體電流與發光分佈之方法」,發明第I 294700 號。
  8. 王水進、陳學龍、汪楷茗,「具有附著反射層的垂直式發光二極體及其製造方法」,發明第I 293813 號。
  9. 王水進、柯榮明,「一種應用於場效發射電特性量測之裝置」,發明第I 301200 號。
  10. 王水進、楊於錚、汪楷茗、陳學龍、李偉吉,「發光二極體接面溫度及熱阻之量測方法」,中華民國專利申請中,95年10月。
  11. 王水進、楊於錚、汪楷茗、陳學龍,「用於製造氮化鎵基半導體垂直結構元件的雷射剝離方法」,發明第I287309號。
  12. 王水進、黃以芹、洪健雄、江孟學、黃雅琪,「具有超薄主動層之環繞式閘極場效電晶體及其製造方法」,發明第I611579號。
其他
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研究計劃
  1. SiC製程技術開發---SiC氧化技術與SiC蕭基二極體製作之研究,工業技術研究院電子所委託學術機構研究計畫。
  2. 超薄氧化層SiO2及高介電係數絕緣層Ta2O5,TiO2與WO3之製備及其臨界厚度之研究分析,行政院國家科學委員會專題研究計劃。
  3. 應用低/高孔隙率多孔矽結構於壓力感測器、高Q值RF電感、及RF濾波器之研製,行政院國家科學委員會專題研究計劃。
  4. 積體整合RTD/HEMT共振穿透元件及其在多值高速邏輯電路上的應用,行政院國家科學委員會專題研究計劃。
  5. 多孔矽超晶格結構負微分電阻元件之研製,行政院國家科學委員會專題研究計劃。
  6. 積體整合矽鍺負電阻元件與高速場效電晶體及其於高速反向邏輯閘與靜態記憶體之應用,行政院國家科學委員會專題研究計劃。
  7. 新穎鎢基奈米線成長技術之開發 及其於多極場發射真空微電子元件之應用研究。
  8. 有效改善高功率GaN-基LED光電特性之新穎表面工程與金屬基座技術之開發研究。
  9. 應用於固態照明高功 GaN基VLED擴展晶 尺寸提升電 擴展能 之晶 結構與電極設計及表面粗化技術開發研究
  10. 高電壓垂直結構GaN 基LED 製程技術開發研究
  11. 低操作電壓氧化物半導體薄膜電晶體特性優化技術與新穎 屬基極薄膜電晶體開發研究
  12. 水熱法製備氧化鋅單晶薄膜及其基板轉移技術開發與光電元件應用研究
  13. 具晶軸優選取向氧化鋅基薄膜之製備及其於薄膜電晶體之應用研究
  14. 雙閘極結構氮氧化鋅基薄膜電晶體之開發研究(I)
  15. 雙重表面粗化矽基感測膜之製備及其於高效能pH感測器之應用研究
指導學生
本學年度 實驗室成員
博士班
張鼎和
碩士班
何博文
廖昌鈺
黃士齊
吳敏弘
黃于倫
已畢業學生
博士
陳治維   江振國   沈澤民   王培任   蔡傅守   許文義   王博弘   黃皓源   黃彥傑   涂詠俊   洪健雄   郭朝絪
碩士
黃駿松   謝嘉榮   林佳慶   郭建賢   郭訊榮   許育唯   張威中   林冠宇   盧建元   杜浚瑋   陳楊   羅翊文   吳如雯   林哲安   林韋志   蔡宗哲   林勇成   吳禎祥   陳彥翰   游宗憲   林潔   吳乃聖   顏浩評   曾洪浩   陳慶益   黃以芹   莊智凱   洪英萁   林呈修   陳湘怡   蕭聖蒼   廖浚凱   汪昇毅   游秉程   吳忠翰   張奕翔   林辰恩   陳柏廷   黃柏凱   林柏均   蘇盟詠   許文叡   王律棠   黃信智   陳威廷   陳韋文   陳煒翰   鄭皓哲   趙芳慶   陳昱豪   賴文宏   鄭宇成
特殊榮譽
  1. 電機系教學優良教師
  2. 中華民國電子材料與元件協會傑出論文獎(2屆)
  3. 國際知名學術期刊(IEEE EDL, JES, ESL, Microelectronics Reliability等)評審委員