NCKU EE 教師個人頁面
English Version
彭洞清 教授
地址
電機系館10樓92A13室
TEL
+886-6-2757575 ext.62433
實驗室
微電子應用實驗室
(R92A21/ext.62400-1260)
學經歷
學歷
1994
美國伊利諾大學芝加哥分校 電機博士
1989
美國亞歷桑那大學 物理碩士
1984
國立成功大學 物理學士
經歷
2014
經濟部技術處小型企業創新研發 (SBIR) 計畫審查委員 
2011/10-2012/9
瑞晶電子 顧問
2014~迄今
電機系微電子所教授
2010~2014
電機系微電子所副教授
2005~2010
電機系微電子所助理教授
2002 ~ 2005
JSR Micro Inc. USA
2001 ~ 2002
Qplus Network Inc. USA
1997 ~ 2001
LSI Logic Corp. USA
1996 ~1997
IBM/Siemens (DDA) USA
1994 ~ 1996
Applied Material Inc. USA
研究領域
  • Graphene 的應用
  • 光電材料與元件
  • CuInGaSe2 (CIGS) 薄膜太陽能電池
  • 銅阻障層材料 for IC銅/多孔隙電介質內連線
著作
期刊論文( Journal )
more
less
  1. Hsueh-Pin Lin, Po-Yi Lin and Dung-Ching Perng*, "Fast-Response and Self-Powered Cu2O/ZnO Nanorods Heterojunction UV-Visible (570 nm) Photodetectors" J. Electrochem. Soc. 167 (2020) 067507
  2. Hsueh-Pin Lin, Xuan-Jun Lin, and Dung-Ching Perng*, "Electrodeposited CuSCN metal-semiconductor-metal high performance deep-ultraviolet photodetector" Applied Physics Letters 112 (2018) 021107
  3. Min-Hao Hong and Dung-Ching Perng*, "Effects on selective epitaxial growth of strained-SiGe p-MOSFETs on various (001) Si recess structures" J. Theoretical and Applied Physics, (2018) doi.org/10.1007/s40094-018-0272-5
  4. Dung-Ching Perng*, Min-Hao Hong, Kuan-Hung Chen and Kuan-Hua Chen, "Enhancement of Short-Circuit Current Density in Cu2O/ZnO Heterojunction Solar Cells" J. Alloys and Compounds, 695 (2017) pp. 549-554
  5. Dung-Ching Perng*, Hsueh-Pin Lin and Min-Hao Hong, "High-performance UV detection and visible-blind photodetector based on Cu2O/ZnO nanorods with poly-(N-vinylcarbazole) intermediate layer" Applied Physics Letters 107 (2015) 241113
  6. Ba-Son Nguyen, Jen-Fin Lin and Dung-Ching Perng*, “Non-vacuum Growth of Graphene Films Using Solid Carbon Source” Applied Physics Letters 106  (2015) 221604
  7. Ba-Son Nguyen, Jen-Fin Lin and Dung-Ching Perng, Microstructural, Electrical, and Mechanical Properties of Graphene Films on Flexible Substrate Determined by Cyclic Bending Test, ACS Applied Materials & Interfaces 2014, 6 (22), 19566–19573
  8. Dung-Ching Perng*, Tzung-Ta Kao, and Ruo-Ping Chang, Formation of Wide Band-gap CuInAlS2 Thin Film and its Application to UV Detectors, Thin Solid Films 572 (2014) 28–32
  9. Ba-Son Nguyen, Jen-Fin Lin and Dung-Ching Perng*, “1-nm-thick graphene tri-layer as the ultimate copper diffusion barrier”, Applied Physics Letters 104 (2014) 082105
  10. Dung-Ching Perng*, Jhin-Wei Chen, Tzung-Ta Kao, and Ruo-Ping Chang, “Cu2O growth characteristics on an array of ZnOnanorods for the nano-structured solar cells”, Surface and Coatings Technology 231 (2013) 261–266
  11. Ruo-Ping Chang and Dung-Ching Perng*, “Nano-structured Cu(In,Al)Se2 near-infrared photodetectors” Thin Solid Films 529 (2013) 238–241
  12. Kuo-Chung Hsu, Dung-Ching Perng*, Jia-Bin Yeh, and Yi-Chun Wang, Ultrathin Cr added Ru film as a seedless Cu diffusion barrier for advanced Cu interconnects, Applied Surface Science258 (2012) 7225
  13. Chia-Lin Hsu, Dung-Ching Perng, Yen-Ming Chen, Shu-Min Huang, Yu-Ting Li, Chang-Hung Kung, Chih-Hsun Lin, Po-Cheng Huang, Chun-Wei Hsu, , Teng-Chun Tsai, Climbing Huang and J.Y. Wu, Electrochemical Studies of W Corrosion for Low Resistive Contact in the 28 nm Technology Node, J. Electrochemical Society 159 (2) (2012) H162-H165
  14. Kuo-Chung Hsu, Dung-Ching Perng*, and Yi-Chun Wang,Robust Ultra-thin RuMo Alloy Film as a Seedless Cu Diffusion Barrier Journal of Alloys and Compounds 516 (2012) 102
  15. Chia-Lin Hsu, Dung-Ching Perng, Wen-Chin Lin, Kuan-Ting Lu,Teng-Chun Tsai, Climbing Huang and J.Y. Wu, Effects of Post-CMP Cleaning on Time Dependent Dielectric Breakdown and Electro-Migration in Porous Low-k/Cu Interconnects, J. Electrochemical Society 158 (11) H1133-H1137 (2011)
  16. Ruo-Ping Chang and Dung-Ching Perng*, Near-infraredphotodetector with CuIn1-x AlxSe2 thin film, Applied Physics Letters 99 issue 8 (2011) 081103
  17. Dung-Ching Perng*, Jia-Feng Fang, and Jhin-Wei Chen, Nano-structured ZnSe/CIS heterojunction solar cells with ZnSe/ZnOcoaxial nanowires, J. Electrochemical Society 158 (10) H1097 (2011)
  18. Jhin-Wei Chen, Dung-Ching Perng*, and Jia-Feng Fang, Nano-structured Cu2O solar cells fabricated on sparse ZnO nanorods,Solar Energy Materials and Solar Cells 95 (2011) 2471
  19. Jia-Feng Fang, Dung-Ching Perng* and Jhin-Wei Chen, “Mechanism of forming (220/204)-oriented CuInSe2 film on Al:ZnO substrate using a two-step selenization process” Journal of Crystal Growth 321 (2011) 106
  20. Dung-Ching Perng*, Jhin-Wei Chen, and Chyi-Jeng Wu “Formation of CuInAlSe2 film with double graded bandgap using Mo(Al) back contact” Solar Energy Materials and Solar Cells 95 (2011) 257
  21. Chia-Lin Hsu, Welch Lin, Chun-Wei Hsu, Jen-Chieh Lin, Teng-Chun Tsai, Chien-Chung Huang, J. Y. Wu, and Dung-Ching Perng, “The TDDB Study of Post-CMP Cleaning Effect for L40 Direct Polished Porous Low K Dielectrics Cu Interconnect” ECS Transactions 33(10): 99-105 (2010)
  22. Jia-Bin Yeh, Dung-Ching Perng* and Kuo-Chung Hsu, “Amorphous RuW film as a diffusion barrier for advanced Cu metallization” J. Electrochemical Society 157 (8) H810-H814 (2010)
  23. Dung-Ching Perng*, Jia-Bin Yeh, Kuo-Chung Hsu and Yi-Chun Wang, “5-nm amorphous boron and carbon added Ru film as a highly reliable Cu diffusion barrier” Electrochem. Solid-State Letters 13 (8) H290-H293 (2010)
  24. Dung-Ching Perng*, Kuo-Chung Hsu and Jia-Bin Yeh “A 3 nm Self-forming InOx Diffusion Barrier for Advanced Cu/porous Low-k Interconnects” Jpn J. Appl. Phys. 49 (2010) 05FA04
  25. Dung-Ching Perng*, Jia-Bin Yeh, Kuo-Chung Hsu and Shuo-Wen Tsai “Self-forming AlOx layer as Cu diffusion barrier on porous low-k film” Thin Solid Films 518 (2010) 1648
  26. Dung-Ching Perng*, Kuo-Chung Hsu, Shuo-Wen Tsai and Jia-Bin Yeh, “Thermal and Electrical Properties of PVD Ru(P) Film as Copper Diffusion Barrier” Microelectronic Engineering 87 (2010) 365
  27. Dung-Ching Perng*, Jia-Bin Yeh, and Kuo-Chung Hsu “Ru/WCoCN as a seedless Cu barrier system for advanced Cu metallization” Applied Surface Science 256 (2009) 688
  28. Dung-Ching Perng*, Jia-Bin Yeh, Kuo-Chung Hsu: "Phosphorous doped Ru Film for Advanced Cu Diffusion Barrier"Applied Surface Science 254 (2008) 6059
  29. Dung-Ching Perng*, Jia-Feng Fang, and Jhin-Wei Chen: "Single Mask Dual Damascene Processes" Microelectronic Engineering, 85 (2008) 599–602
  30. Wei-Jen Hsia, Wilbur Catabay, Dung-Ching Perng, and Peter J. Wright, LSI Logic; Liam Cunnane, Knut Beekmann, SimonMcClatchie & Adrian Kiermasz, Trikon Technologies Ltd.: "Flowfill technology, low dielectric constant materials"; FabtechJournals: Edition 10: Semiconductor Fabtech: Section 7 p. 291, July 1999.
  31. Schnabel RF, Dobuzinsky D, Gambino J, Muller KP, Wang F,Perng D.C., Palm H “Dry etch challenges of 0.25 mu m dual damascene structures” Microelectronic Engineering, 37-38(1997) 59-65
  32. D.C. Perng, D.A. Crewe and A.D. Feinerman: MicromachinedThermionic Emitters. J. Micromechaics and Microengineering, 2(1):25-30, 1992.
  33. A.D. Feinerman, D.A. Crewe, D.C. Perng, S.E. Shoaf and A.V. Crewe: A Sub-cm Micromachined Electron Microscope. J. Vac. Sci. & Technol. A 10(4):611-616, 1992.
  34. D.A. Crewe, D.C. Perng, S.E. Shoaf, and A.D. Feinerman:Micromachined Electrostatic Electron Source. J. Vac. Sci. Technol. B 10(6):2754-2758, 1992.
  35. A.D. Feinerman, D.C. Perng; D.A. Crewe, S.E. Shoaf, A.V. Crewe: High-Throughput Electron-Beam Lithography. SPIE-Imaging Techninologies and Applications, Vol. 1778 p.78-89; 1992.
  36. D.C. Perng, D.A. Crewe, S.B. Lee and A.D. Feinerman:Micromachined Arrays of Thermionic Emitters. SPIE-Imaging Technologies and Applications, 1778:90-98, 1992.
  37. D.A. Crewe, D.C. Perng, S.E. Shoaf, and A.D. Feinerman: AMicromachined Electron Source. SPIE-Imaging Technologies and Applications, Vol. 1778, p. 66-77, 1992.
會議論文( Conference )
more
less
  1. D.W. Huang, H.P. Lin and D.C. Perng, "Visible-Blind Ultraviolet Photodetectors Based on NiO/ZnO NRs with PVK Intermediate Layer” NANOTECH 2018 Conference, Anaheim, California, USA, May 13-16, 2018
  2. Jia-Bin Chen and Dung-Ching Perng, "Evaluations of Graphene to Graphene Contacts” 2017 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN), Monterey, California, USA, March 21-23, 2017
  3. Dung-Ching Perng, Kuan-Hung Chen, and Kuan-Hua Chen and Min-Hao Hong, “Short-Circuit Current Density Enhancement with ZnO Nanowires and Ag Mirror” 32nd European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2016) 20-24 June 2016, Munich, Germany
  4. Jia-Wei Fang,
  5. Ba-Son Nguyen, Jen-Fin Lin and Dung-Ching Perng, “Low-cost Graphene Growth from Sputtered Carbon and Transition Metal Catalysts”  9th International Conference on New Diamond andNano Carbons (2015 NDNC) Shizuoka, Japan
  6. Dung-Ching Perng, Tzung-Ta Kao, and Ruo-Ping Chang, “Wide Bandgap CuInAlS2 Thin Film and Its Application to UV Detectors”, International Conference on Metallurgical Coatings and Thin Films (ICMCTF)April 2014, San Diego, CA, USA
  7. Ming-Chen Hung, Tzung-Ta Kao and Dung-Ching Perng, “AgNanowires Embedded Mo Film as a Reliable Flexible Electrode” IEEE Nanotechnology Material and Devices Conference, Oct. 2013, Tainan Taiwan
  8. Dung-Ching Perng, Ming-Chen Hung, Kuo-Yu Wang, “Reliability Studies of Mo Layer Deposited on Polyimide Substrate for CIGS Solar Cell Applications”, IEEE PVSC38 June, 2012 Austin, Texas, USA
  9. Ruo-Ping Chang, Dung-Ching Perng and Jia-Feng Fang, “Cu(In,Al)Se2 near-infrared photodetectors” 2011 International Thin Films Conference, Pingtung , Taiwan.
  10. Dung-Ching Perng, Jhin-Wei Chen, Tzung-Ta Kao, andRuo-Ping Chang “Cu2O growth characteristics on an array of ZnO nanorods for the nano-structured solar cells” 2011 International Thin Films Conference, Pingtung , Taiwan. (Invited)
  11. Jhin-Wei Chen, Dung-Ching Perng, Jia-Feng Fang andRung-Yuan Lee, “Influence of ZnO nanorods on the preferred growth of Cu2O thin film” The 5th International Conference on Technological Advances of Thin Films & Surface Coatings (ThinFilms2010), July 2010, Harbin, China
  12. Jia-Feng Fang, Dung-Ching Perng, Jhin-Wei Chen, “Formation of CuInSe2 film with (220/204) preferred orientation by selenization of Cu/In films on AZO substrate” The 5th International Conference on Technological Advances of Thin Films & Surface Coatings (ThinFilms2010), July 2010, Harbin, China
  13. Chia-Lin Hsu, Kuan-Ting Lu, Wen-Chin Lin, Jeh-ChiehLin, Chih-Hsien Chen, Teng-Chun Tsai, Climbing Huang, J Y Wu, and Dung-Ching Perng, “The TDDB failure mode and its engineering study for 45nm and beyond porous low k dielectric direct polish scheme” IEEE International Reliability Physics Symposium (IPRS) May 2010 Anaheim, California, USA
  14. Dung-Ching Perng, Meng-Shian Tsai, Po-Yi Wu, and Jia-Feng Fang, “Influences of the substrate structure on the growth of CIS and In2Se3 thin films” IEEE PVSC35 June, 2010 Hawaii, USA
  15. Dung-Ching Perng, Jhin-Wei Chen, and Chyi-Jeng Wu “CuInAlSe2 Graded Bandgap Modulation Using Mo(Al) Back Contact” The 19th International Photovoltaic Science and Engineering Conference (PVSEC-19), Nov. 9-13, 2009,Jeju, Korea
  16. Dung-Ching Perng, Po-Yi Wu, Meng-Shian Tsai, and Jia-Feng Fang “Influence of Substrate Structures on the Preferred Growth of CuInSe2 Thin Film” The 19th International Photovoltaic Science and Engineering Conference (PVSEC-19), Nov. 9-13, 2009 Jeju, Korea
  17. Jia-Bin Yeh, Dung-Ching Perng, Kuo-Chung Hsu, and Climbing Huang “Diffusion barrier properties of 10nm RuWalloy for advanced Cu metallization” Advanced Metallization Conference-Asia (ADMETA) Oct. 19-22, 2009 Tokyo, Japan
  18. Jia-Bin Yeh, Dung-Ching Perng, and Kuo-Chung Hsu “Improvement of Cu seedless Ru barrier by insertion of an amorphous WCoCN interlayer” International Conference on. Solid State Devices and Materials (SSDM), Oct. 7-9, 2009 Miyagi, Japan
  19. Kuo-Chung Hsu, Dung-Ching Perng, Jia-Bin Yeh and Climbing Huang “A 3 nm Self-forming In2O3 Diffusion Barrier for Advanced Cu/Porous Low k Interconnects” Advanced Metallization Conference-Asia (ADMETA) Oct. 19-22 2009 Tokyo, Japan
  20. C.-L. Hsu, J.Y. Fang, A. Yu, J. Lin, C. Huang, J.Y. Wu, and D.-C. Perng, “Defect Study of Manufacturing Feasible Porous Low k Dielectrics Direct Polish for 45nm Technology and Beyond” IEEE International Interconnect Technology Conference(IITC), June 1-3, 2009 Sapporo, Hokkaido, Japan
  21. Dung-Ching Perng, Kuo-Chung Hsu, Shuo-Wen Tsai andJia-Bin Yeh “Thermal and Electrical Properties of PVDRu(P) Film as Cu Diffusion Barrier” Meterials for Advanced Metallization Conference, March 8-11, 2009, Grenoble, France
  22. Dung-Ching Perng, Jia-Feng Fang, Chun-Hong Chiu, and Ding-Wen Chiou “Systematic Studies of Stacking Sequences Using CBD Se to Form CuInSe2” 18th International photovoltaic Science and Engineering Conference, January 19-23, 2009 Kolkata, India. (3-1p-016)
  23. Kuo-Chung Hsu, Dung-Ching Perng, Jia-Bin Yeh, Ruo-Ping Chang, Jia-Feng Fang, and Climbing Huang, “Copper diffusion barrier properties of a 10 nm W-Mo alloy films on porous SiOC:H” Advanced Metallization Conference-Asia (ADMETA) Oct. 8-10 2008 Tokyo, Japan
  24. Dung-Ching Perng, Jia-Bin Yeh, Kuo-Chung Hsu: "Grain Boundaries Stuffed Ru Film for Advanced Cu Diffusion Barrier". Proceedings of the Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI) Tokyo, Japan, Nov. 2007. p.173
  25. Ruo-Ping Chang, Jia-Feng Fang and Dung-Ching Perng, “Nano-structured CuIn1-xGaxSe2 solar cells fabricated on Substrate with ZnSe nanowires” International Electron Devices & Material Symposia (IEDMS) 2012
  26. Jhin-Wei Chen, Dung-Ching Perng, Tzung-Ta Kao and Ruo-Ping Chang “Cu2O growth characteristics on an array of ZnO nanorods and the nano-structured solar cells” 2011 International Thin Films Conference, Nov.20-23, 2011 Pingtung, Taiwan
  27. Ruo-Ping Chang and Dung-Ching Perng, “Cu(In,Al)Se2 near-infrared photodetectors” 2011 International Thin Films Conference, Nov.20-23, 2011 Pingtung, Taiwan
  28. Jia-Feng Fang, Dung-Ching Perng, Ding-Wen Chiou, “ Composition Effects on Morphology of Cu(In,Al)Se2 Thin Film Prepared by Selenization of Bi-layer Metallic Precursors” International Electron Devices & Material Symposia (IEDMS) 2009
  29. Jia-Feng Fang, Hsuan-Kai Wang, Dung-Ching Perng, “Formation of Cu2ZnSnSe4 via Annealing of Zn and Cu2SnSe3 bi-layers” International Electron Devices & Material Symposia (IEDMS) 2009
  30. Jia-Feng Fang, Dung-Ching Perng, “Sputtering power effects on CIS crystallization” International Electron Devices & Material Symposia (IEDMS) 2009
  31. Kuo-Chung Hsu, Dung-Ching Perng and Jia-Bin Yeh, “10nm Ru-Al Alloy as Copper Diffusion Barrier on Porous SiOC:H for Advanced Copper Metallization” International Electron Devices & Material Symposia (IEDMS) 2009
  32. Jia-Bin Yeh, Dung-Ching Perng, Kuo-Chung Hsu, “Self-forming AlOx Barrier on Porous SiCOH against Cu Diffusion” International Electron Devices & Material Symposia (IEDMS) 2009
  33. Jia-Feng Fang, Dung-Ching Perng, Chun-Hong Chiu, and Ding-Wen Chiou: “Growth of CuInSe2 using Stack Element Layer Technique for Thin Film Solar Cells” International Electron Devices & Material Symposia (IEDMS) 2008
  34. Jhin-Wei Chen and Dung-Ching Perng: “Preparation of ZnSe film from metallic Zn precursor” International Electron Devices & Material Symposia (IEDMS) 2008
  35. Jia-Feng Fang, Dung-Ching Perng and Hsuan-Kai Wang “Cu2ZnSnS4 Thin Films Prepared by Sulfurization of Sputtered Precursors” International Electron Devices & Material Symposia (IEDMS) 2008
  36. Ruo-Ping Chang, Dung-Ching Perng, Jia-Bin Yeh, Kuo-Chung Hsu, and Chia-Lin Hsu: “A Study of Low k Material Porosity Effects on Ta/TaN Diffusion Barrier and Its Thermal Stability“ International Electron Devices & Material Symposia (IEDMS) 2008
  37. Jia-Bin Yeh, Kuo-Chung Hsu, and Dung-Ching Perng: “Selective growth of CoWB film on Copper by Electroless Plating Deposition” International Electron Devices & Material Symposia (IEDMS) 2008
  38. Dung-Ching Perng, Jia-Feng Fang, Jhin-Wei Chen, and Benjamin Szu-Min Lin: "Simulation of Phase Shift Mask for Single Mask Dual Damascene Process". International Electron Devices & Material Symposia (IEDMs) Tainan, Taiwan, 2006 Symposium D p.377
專利
more
less
  1. Dung-Ching
  2. Dung-Ching Perng, 2004, “Methods of pore sealing and metal encapsulation in porous low k interconnect (I) (Patent. Pub No. 20040229453A1)
  3. Dung-Ching Perng, 2004, “Methods of pore sealing and metal encapsulation in porous low k interconnect (II) (Patent. Pub No. 20040227243A1)
  4. Dung-Ching Perng et al., 2004,”Formation of novel DRAM cell capacitors by integration of capacitors with isolation trench sidewalls”, (Patent. No. 6,794,698)
  5. Dung-Ching Perng,et al., 2003, “Apparatus for depositing low dielectric constant oxide film”, (Patent. No. 6,523,494)
  6. W.Catabay, W.J. Hsia, and Dung-Ching Perng, 2002, “Process for forming low K dielectric material between metal lines”, (Patent. No. 6,423,630)
  7. Dung-Ching Perng,et al., 2002, “Formation of a novel DRAM cell”, (Patent. No. 6,369,418)
  8. Dung-Ching Perng,et al., 2002, “DRAM cell having a vertical transistor and a capacitor formed on the sidewalls of a trench isolation”, (Patent. No. 6,365,452)
  9. Dung-Ching Perng,et al., 2001, “DRAM cell having a vertical transistor and a capacitor formed on the sidewalls of a trench isolation”, (Patent. No. 6,177,699)
  10. Dung-Ching Perng,et al., 2001, “Method for depositing low dielectric constant oxide films”, (Patent. No. 6,149,987)
  11. Dung-Ching Perng,et al., 2000, “Formation of novel DRAM cell capacitors by integration of capacitors with isolation trench sidewalls”, (Patent. No. 6,090,661)
  12. Liu and Dung-Ching Perng, 2000, “Method of single step damascene process for deposition and global planarization”, (Patent. No. 6,090,239)
  13. Dung-Ching Perng,et al., 2000, “Method and apparatus for preventing formation of black silicon on edges of wafers”, (Patent. No. 6,066,570)
  14. Dung-Ching Perng,et al., 2000, “Reduction of black silicon in semiconductor fabrication”, (Patent. No. 6,033,997)
  15. YC Liu and Dung-Ching Perng, 1999, “Method of single step damascene process for deposition and global planarization”, (Patent. No. 6,004,880)
  16. Dung-Ching Perng “Methods of pore sealing and metal encapsulation in porous low k interconnect”(Patent Pub. No. WO/2004/105124)
  17. Klaus Roithner,Ting Hao Wang,David M.Dobuzinsky and Dung-Ching Perng,“Method and assembly for preventing formation of black silicon on edges of wafers”,(Patent. No. EP1009021)
  18. Ting Hao Wang,Dung-Ching Perng,David M.Dobuzinsky, and Richard S. Wise, “Reduction of black silicon in semiconductor fabrication”, (Patent. No. EP0942461)
  19. Dung-Ching Perng, “Reduction of black silicon in semiconductor fabrication”, (Patent. No. EP0928018)
  20. Dung-Ching Perng, David M.Dobuzinsky, Ting Hao Wang, and Klaus Roithner “Method of preventing black silicon from being formed on wafer and semiconductor assembly”(Patent no.JP2000183032)
  21. Ting Hao Wang,Dung-Ching Perng, David M.Dobuzinsky, and Richard S. Wise “Method for reducing formation of black silicon related to manufacture of semiconductor device”(Patent no. JP1999330419)
  22. Dung-Ching Perng “Manufacture of semiconductor device”(Patent no. JP1999260808)
  23. Method and apparatus for preventing formation of black silicon on edges of wafers, Taiwan, TW434748, 彭洞清等四人, IBM and Siemens, 2001
  24. Reduction of black silicon in semiconductor fabrication, Taiwan, TW396504, 彭洞清, IBM and Siemens, 2000
  25. Reduction of black silicon in semiconductor fabrication, Taiwan, TW432657, 彭洞清等四人, IBM and Siemens, 2001
  26. Method and apparatus for preventing formation of black silicon on edges of wafers, Korean, KR20000047991, 彭洞清等四人, IBM and Siemens, 2000
  27. Method for reducing black silicon in semiconductor fabrication by forming a dielectric layer on regions of a wafer unprotected by a pad stack., Korean, KR1019980059707, 彭洞清, Siemens, 1999
  28. Method and device for preventing black silicon formation on edge of chip, China, CN1261723, 彭洞清等四人, IBM and Siemens, 2000
  29. Reduction of black silicon in semiconductor fabrication, China, CN1221977, 彭洞清, IBM and Siemens, 1999
  30. Manufacture of semiconductor device, China, CN1147924, 彭洞清, IBM and Siemens, 2004
  31. Reduction of black silicon in semiconductor manufacture (I), China, CN1231499, 彭洞清等四人, IBM and Siemens, 1999
  32. Reduction of black silicon in semiconductor manufacture (II), China, CN1123914, 彭洞清等四人, IBM and Siemens, 1999
  33. Reduction of black silicon in semiconductor fabrication, China, CN98123097, 彭洞清, Siemens, 1999
  34. 台灣專利:彭洞清 等,奈米微影方法 TW I 348078
  35. 台灣專利:彭洞清 等,積體電路後段銅內連線銅阻障層之製備方法 TW I 346370
  36. Hong Kong 專利:半導體製作中黑硅的減少 Hong Kong Patent 1018352
  37. Hong Kong 專利:在生產半導體的過程中減低黑硅的出現- Hong Kong Patent 1021252
  38. Hong Kong 專利:預防在晶片邊上形成黑硅的方法及裝置- Hong Kong Patent 1026065
  39. 台灣專利:彭洞清 等,多孔隙超低介電材料即時損害偵測與量測器 TW I 404152 (專利權期間 8/2013 to 1/2027)
  40. 台灣專利:彭洞清 等,具場發射機制的奈米線圖罩及三極體式電子微影裝置 TW I 439821 (專利權期間 6/2014 to 3/2027)
  41. 台灣專利:彭洞清 等,多孔隙介電質的孔隙性質測量器及多孔隙介電質的孔隙性質測量方法 TW I 429003 (專利權期間 3/2014 to 4/2028)
  42. 台灣專利:彭洞清 等,銅銦鎵硒太陽能電池及其製造方法TW I 433328 (專利權期間 4/2014 to 5/2030)
  43. 中國大陸專利: 薄膜太陽能電池及其製作方法 CN 1462281(專利權期間 8/2014 to 8/2034)
  44. 彭洞清 等, CuInSe2 相關之薄膜太陽能電池具有固定MoSe2 厚度的製備方法, 2010(申請中)
  45. 彭洞清 等, 調變銅銦鋁二硒(CIAS)漸變式能隙之製程方法, (申請中)
  46. 彭洞清 等, 多孔隙電介質孔洞密度及孔洞大小的測量器, 2008(申請中)
其他
more
less
  1. 聯結銀奈米線及製作銀奈米網之研究 (2014-2016)
  2. 標竿計畫: Development of Advanced Copper Barrier for Porous Ultra Low K Materials (2007-2008)
  3. 標竿計畫: IC內連線銅阻障層十奈米以下材料的研發 (2008-2009)
  4. 研製高效率低成本CIS 薄膜太陽能電池於可撓式基板 (台達電/旺能 4/2009-3/2010) 
  5.  研製CIGS薄膜太陽能電池於可饒式基板(台達電/旺能 4/2010-3/2011)
  6. 改善可撓式CIGS太陽電池並聯電阻之研究(台達電/旺能 4/2011-3/2012)
  7. 2012 IEEE PVSC 38 June, 2012 Austin, Texas, USA
  8. 2011 International Thin Films Conference (TACT 2011), Nov. 20-23,
  9. 2010 The 5th International Conference on Technological Advances of Thin Films & Surface Coatings (ThinFilms2010), July 2010, Harbin, China
  10. 2010 IEEE PVSC 35 June, 2010 Hawaii, USA
  11. 2009 The19th International Photovoltaic Science and Engineering Conference (PVSEC-19) ,Nov.9-13,Jeju,Korea
  12. 2008
  13. 2007 17th International Photovoltaic Science and Engineering Conference (PVSEC-17)
  14. 2007 Advanced Metallization Conference (AMC)
  15. 2007 Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI-V)
  16. 2004 VLSI Symposium
其他
more
less
  1. 聯結銀奈米線及製作銀奈米網之研究 (2014-2016)
  2. 標竿計畫: Development of Advanced Copper Barrier for Porous Ultra Low K Materials (2007-2008)
  3. 標竿計畫: IC內連線銅阻障層十奈米以下材料的研發 (2008-2009)
  4. 研製高效率低成本CIS 薄膜太陽能電池於可撓式基板 (台達電/旺能 4/2009-3/2010) 
  5.  研製CIGS薄膜太陽能電池於可饒式基板(台達電/旺能 4/2010-3/2011)
  6. 改善可撓式CIGS太陽電池並聯電阻之研究(台達電/旺能 4/2011-3/2012)
  7. 2012 IEEE PVSC 38 June, 2012 Austin, Texas, USA
  8. 2011 International Thin Films Conference (TACT 2011), Nov. 20-23,
  9. 2010 The 5th International Conference on Technological Advances of Thin Films & Surface Coatings (ThinFilms2010), July 2010, Harbin, China
  10. 2010 IEEE PVSC 35 June, 2010 Hawaii, USA
  11. 2009 The19th International Photovoltaic Science and Engineering Conference (PVSEC-19) ,Nov.9-13,Jeju,Korea
  12. 2008
  13. 2007 17th International Photovoltaic Science and Engineering Conference (PVSEC-17)
  14. 2007 Advanced Metallization Conference (AMC)
  15. 2007 Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI-V)
  16. 2004 VLSI Symposium
-->
研究計劃
  1. 積體的封密銅製程在IC銅/多孔隙超低電介質材料的製造與研發(2005-2006)
  2. 單一光罩雙鑲嵌製程的研發(2006-2007)
  3. 積體電路32奈米以下銅阻障層材料的研究 I (2007-2008)
  4. 提升銅銦鎵二硒薄膜太陽能電池轉換效率及降低其製造成本的研發(1/2, 2008-2009)
  5. 提升銅銦鎵二硒薄膜太陽能電池轉換效率及降低其製造成本的研發(2/2, 2009-2010)
  6. 非傳統CuInAlSe2晶粒方向與電池結構的研製及堆疊式上層電池吸收層之研究(2009-2010)
  7. 奈米結構的CuInSe2 太陽能電池的研製 (2010-2011)
  8. 改善可撓式不鏽鋼基板粗糙度並阻障雜質滲透入CIGS太陽能電池的研究 (1/2011-12/2011)
  9. 新穎材料與結構應用於光檢測之研究 (2012-2013)
  10. 可撓式 CIGS 太陽電池之可靠度研究 (1/2012-12/2012)
  11. 銀奈米線應用於軟性基板太陽能電池之研究 (2013-2014)
  12.  聯結銀奈米線及製作銀奈米網之研究 (2014-2016)
  13. 石墨稀應用於IC銅內連線之擴散阻障層之研究(2016-2017)
  14. 使用蕭基接觸及功能化氧化鋅奈米柱之表面製作快速及高靈敏度紫外光偵測器之研究
  15. 氧化亞銅摻雜銻及(200)晶向對電阻式記憶體特性及其穩定性(2019-2020)
  16. 全無機鈣鈦礦量子點及CuSCN材料之開發應用於大面積智慧型燈源系統(2020-2021)
指導學生
本學年度 實驗室成員
博士班
林學品
碩士班
吳俊杰
已畢業學生
博士班
106
洪敏皓
104
阮柏山
101
張若蘋
100
方嘉鋒   許國忠   許嘉麟
99
陳智偉
98
葉嘉斌
碩士班
108
林威廷   廖俊德   范揚旻
107
黃大益   曾昱翔   陳威宇
106
雷博宇   林柏亦   張景翔   陳冠宇
105
傅翊昇   林宣均   黃德瑋   陳冠華
104
鄭仁駿   黃仁炫   黃仕穎   陳加彬
103
林學品   陳冠宏   吳健愷   紀銘祐
102
闕文峰   許民穎   蘇孟偉   徐治暘   方家為
101
蔡智仰   林建宏   洪銘辰   郭咨妤   蘇耕毅
100
王威達   王奕鈞   王國裕   鍾文陽   張宜婷   黃偉傑
99
林中漢   王之俊   李榮原   吳宗榮
98
蔡碩文   林建宏   吳奇政   李岳庭   簡思甄   蔡孟憲
97
邱鼎文   王宣凱   吳柏毅
96
邱俊閎
95
林昇億
特殊榮譽
  1. 美商應用材料公司(Santa Clara)員工極優奬 (1996)
  2. 2010 Who's Who in the World
  3. 2012 台灣電子材料與元件協會傑出論文獎