Chen, Po-An; Chiang, Meng-Hsueh; Hsu, Wei-Chou, “All-zigzag graphene nanoribbons for planar interconnect application”, Journal of Applied Physics, Vol. 122, No. 3, pp. 034301, July 21 2017.(SCI)

Liu, Han-Yin; Huang, Ruei-Chin; Li, Yi-Ying, “Amorphous TiO2-Based Thin-Film Phototransistor”, IEEE Electron Device Letters, Vol. 38, No. 6, pp. 756-759, Jun 2017.(SCI)

Lee, Ching-Sung; Hsu, Wei-Chou; Chiang, Bo-Jung, “Comparative studies on AlGaN/GaN/Si MOS-HFETs with Al2O3/TiO2 stacked dielectrics by using an ultrasonic spray pyrolysis deposition technique”, semiconductor science and technology, Vol. 32, No. 5, pp.055012, May 2017.(SCI)

C. S. Lee, H. Y. Liu , W. C. Hsu , S. F. Chen, “Normally-off AlGaN/AlN/GaN/Si oxide-passivated HEMTs and MOSHEMTs by using CF4 plasma and ozone water oxidization treatment”, Materials Science in Semiconductor Processing, Vol. 59, 1 Pages 1–4 March 2017(SCI)

H. Y. Liu, C. W. Lin, W. C. Hsu, C. S. Lee, M. H. Chiang, W. C. Sun, S. Y. Wei, and S. M. Yu, “Integration of Gate Recessing and In Situ Cl- Doped Al2O3 for Enhancement-Mode AlGaN/GaN MOSHEMTs Fabrication”, IEEE Electron Device Letters, VOL. 38, NO. 1, JANUARY 2017.(SCI)

H. Y. Liu, W. C. Ou, and W. C. Hsu, “Investigation of Post Oxidation Annealing Effect on H2O2-Grown-Al2O3/AlGaN/GaN MOSHEMTs”, IEEE Electron Devices Society, Vol.: 4, Issue: 5, pp. 358 - 364, Sep. 2016.(SCI)

C. S. Lee*, W. C. Hsu, H. Y. Liu and B. J. Chiang, “Ti0.5Al0.5O-Dielectric AlGaN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors by Using Non-Vacuum Ultrasonic Spray Pyrolysis Deposition”, ECS Journal of Solid State Science and Technology, Vol 5, No. 12, Q284-Q288, 2016.(SCI)

C. S. Lee,  W. C. Hsu,  H. Y. Liu,  T. T. Wu,  W. C. Sun,  S. Y. Wei, S. M. Yu, "Investigations on MgO-dielectric GaN/AlGaN/GaN MOS-HEMTs by using an ultrasonic spray pyrolysis deposition technique," Semicond. Sci. Tech., Vol. 31, No. 5, Mar. 2016.

H. Y. Liu, W. C. Hsu, W. F. Chen, C. W. Lin, Y. Y. Li, C. S. Lee, W. C. Sun, S. Y. Wei, S. M. Yu, "Investigation of AlGaN/GaN Ion-Sensitive Heterostructure Field-Effect Transistors-Based pH Sensors With Al2O3 Surface Passivation and Sensing Membrane," IEEE Sens. J., Vol. 16, No. 10, May. 2016.

C. S. Lee1,  W. C. Hsu,  H. Y. Liu,  J. H. Tsai,   H. H. Huang, "Al0.25Ga0.75N/GaN enhancement-mode MOS high-electron-mobility transistors with Al2O3 dielectric obtained by ozone water oxidization," Jpn. J. Appl. Phys., Vol. 55, No. 4, Apr. 2016.

H. Y. Liu, Y. H. Wang, and W. C. Hsu, "Suppression of Dark Current on AlGaN/GaN Metal-Semiconductor-Metal Photodetectors" IEEE Sens J., vol. 15, no. 9, pp. 5202-5207, Sep 2015

E. P. Yao, Y. J. Tsai, and W. C. Hsu, "An investigation of organic photovoltaics improvement via extension of the exciton lifetime" Phys. Chem. Chem. Phys., , vol.17, no.8, pp.5826-5831, 2015

C. S. Lee, W. C. Hsu, B. Y. Chou, H. Y. Liu, C. L. Yang, W. C. Sun, S. Y. Wei, S. M. Yu, C. L. Wu, "Investigations of TiO2-AlGaN/GaN/Si-Passivated HFETs and MOS-HFETs Using Ultrasonic Spray Pyrolysis Deposition" IEEE Transation on Electron Devices, vol. 62, no. 5, pp. 1460-1466, May 2015

H. Y. Liu, W. C. Hsu, C. S. Lee, B. Y. Chou, W. F. Chen, “Enhanced Performances of AlGaN/GaN Ion-Sensitive Field-Effect Transistors Using H2O2-Grown Al2O3 for Sensing Membrane and Surface Passivation Applications,” IEEE Sens. J. , vol.15, no.6, pp. 3359-66, June 2015. (SCI, EI)

E. P. Yao, S. M. Shiu, Y. J. Tsai, Y. S. Lin, W. C. Hsu, “Characterization of Interfaces Between Contacts and Active Layer in Organic Photovoltaics Using Impedance Spectroscopy and Equivalent Circuit Model,” IEEE J. Photovolt., vol. 62, no. 5, pp. 1460-6, May 2015. (SCI, EI)

H.Y. Liu, W. C. Hsu, B.Y. Chou, Y. H. Wang, “Fabrication AlGaN/GaN MIS UV Photodetector by H2O2 Oxidation,” IEEE Photonics TechnologyLetters , vol. 27, no. 1 ,pp.101-4 Jan. 2015. (SCI, EI)

Y. S. Lin, S. F. Lin, W. C. Hsu, “Microwave and power characteristics of AlGaN/GaN/Si high-electron mobility transistors with HfO2 and TiO2passivation,” Semicond. Sci. Technol., vol. 30, no.1, pp. 015016, Jan. 2015. (SCI, EI)

B. Y. Chou, W. C. Hsu, H. Y. Liu, C. S. Lee, Y. S. Wu, W. C. Sun, S. Y. Wei, Y. S. Min, M. H. Chiang, “Investigations of AlGaN/GaN MOS-HEMT with Al2O3 deposition by ultrasonic spray pyrolysis method,” Semicond. Sci. Technol., vol. 30, no.1, pp. 015009, Jan. 2015. (SCI, EI)

H. Y. Liu, W. C. Hsu, B. Y. Chou, Y. H. Wang, W. C. Sun, S. Y. Wei, S. M. Yu, M. H. Chiang, “Growing Al2O3 by Ultrasonic Spray Pyrolysis for Al 2O 3/AlGaN/GaN Metal-Insulator-Semiconductor Ultraviolet Photodetectors,” IEEE Trans. Electron Device, vol. 61, no. 12, pp. 4062-9 , Dec. 2014. (SCI, EI)

B. Y. Chou, C. S. Lee, C. L. Yang, W. C. Hsu, H. Y. Liu, W. C. Sun, S .Y. Wei, and S. M. Yu, ” TiO2-Dielectric AlGaN/GaN/Si Metal-Oxide-Semiconductor High Electron Mobility Transistors by Using Non-Vacuum Ultrasonic Spray Pyrolysis Deposition,” IEEE Electron Device Lett., vol. 35, pp.1091-1093, November 2014.(SCI, EI)

E. P. Yao, C. C. Chen , J. Gao, Y. Liu, Q. Chen, M. Cai, W. C. Hsu, Z. Hong, G. Li, Y. Yang, “The study of solvent additive effects in efficient polymer photovoltaics via impedance spectroscopy,” Sol. Energy Mater. Sol. Cells, vol. 130, pp.20-26, November 2014.(SCI, EI)

C. S. Lee, J. C. Yeh, W. C. Hsu, H. Y. Liu, and B. Y. Chou, “Comparative Studies on InAlAs/InGaAs MOS-MHEMTs with Different Compressive/Tensile-Strained Channel Structures,” ECS J. Solid State Sci. Technol., vol. 3, pp. Q227-Q231, September 2014. (SCI, EI)

H. Y. Liu, W. C. Hsu, C. S. Lee, B. Y. Chou, Y. B. Liao, and M. H. Chiang, “Investigation of Temperature-Dependent Characteristics of AlGaN/GaN MOS-HEMT by Using Hydrogen Peroxide Oxidation Technique,” IEEE Trans. Electron Devices, vol. 61, pp. 2760-2766, August 2014. (SCI, EI)

C. S. Lee, Y. H. Liao, B. Y. Chou, H. Y. Liu, and W. C. Hsu, “Composite HfO2/Al2O3-dielectric AlGaAs/InGaAs MOS-HEMTs by using RF sputtering/ozone water oxidation,” Superlattices Microstruct., vol. 72, pp. 194–203, August 2014. (SCI, EI)

H. Y. Liu, C. S. Lee, F. C. Liao, W. C. Hsu, B. Y. Chou, J. H. Tsai, and H. Y. Lee, “Comparative Studies on AlGaN/GaN MOS-HEMTs with Stacked La2O3/Al2O3 Dielectric Structures,” ECS J. Solid State Sci. Technol., vol. 3, pp. N115-N119, August 2014. (SCI, EI)

E. P. Yao, Y. J. Tsai, and W. C. Hsu, “Investigation of thermal instability of additive-based high-efficiency organic photovoltaics,” Int. J. Photoenergy, vol. 2014, pp. 952528-1-952525-8, August 2014. (SCI, EI)

E. P. Yao, C. S. Ho, C. Yu, E L. Huang, Y. N. Lai, and W. C. Hsu, “An Alternative Approach for Improving Performance of Organic Photovoltaics by Light-Enhanced Annealing,” Int. J. Photoenergy, vol. 2014, pp. 120693-1-120693-7, July 2014. (SCI, EI)

Y. B. Liao, M. H. Chiang, N. Damrongplasit, W. C. Hsu, and T. J. King Liu, “Design of gate-all-around silicon MOSFETs for 6-T SRAM area efficiency and yield,” IEEE Trans. Electron Device, vol. 61, pp. 2371-2377, July 2014. (SCI, EI)

Y. B. Liao, M. H. Chiang, Y. S. Lai, and W. C. Hsu, “Stack gate technique for dopingless bulk FinFET,” IEEE Trans. Electron Device, vol. 61, pp. 963-968,April 2014. (SCI, EI)

H. Y. Liu, W. C. Hsu, B. Y. Chou, and Y. H. Wang, “ A Simple Passivation Technique for AlGaN/GaN Ultraviolet Schottky Barrier Photodetector,”IEEE Photonics Technol. Lett., vol. 26, pp. 138-141, Jan. 2014. (SCI, EI)

C. H. Wang, S. W. Wang, G. Doornbos, G. Astromskas, K. Bhuwalka, R. Contreras-Guerrero, M. Edirisooriya, J. S. Rojas-Ramirez, G. Vellianitis, R. Oxland, M. C. Holland, C. H. Hsieh, P. Ramvall, E. Lind, W. C. Hsu, L. E. Wernersson, R. Droopad, M. Passlack, and C. H. Diaz, “InAs hole inversion and bandgap interface state density of 2×1011 cm 2eV 1 at HfO2/InAs interfaces,” Appl. Phys. Lett., vol. 103, pp. 143510-1-4, Oct. 2013. (SCI, EI)

Han-Yin Liu, Ching-Sung Lee, Wei-Chou Hsu, Lung-Yi Tseng, Bo-Yi Chou, Chiu-Sheng Ho, and Chang-Luen Wu, “Investigations of AlGaN/AlN/GaN MOS-HEMTs on Si Substrate by Ozone Water Oxidation Method,” IEEE Trans. Electron Devices, vol. 60, pp. 2231-2237, Jul. 2013.

Y. B. Liao, M. H. Chiang, Lai Y. S., W. C. Hsu, “A pragmatic design methodology using proper isolation and doping for bulk FinFETs,” Solid-State Electron., vol. 85, pp.48-53, Jul. 2013.

B. Y. Chou, W. C. Hsu*, C. S. Lee, H. Y. Liu, and C. S. Ho, “Investigations of AlGaN/GaN HFETs utilizing post-metallization etching by nitric acid treatment,” Semicond. Sci. Technol., vol. 28, pp. 074003-1-8, Jul. 2013.

C. H. Chan, C. H. Ho, M. K. Chen,Y. S. Lin, Y. S. Huang, W. C. Hsu*, “Optical characterization of InAlAs/InGaAs metamorphic high-electron mobility transistor structures with tensile and compressive strain,” Thin Solid Films, vol. 529, pp. 217-221, Feb. 2013.

C. S. Ho, W. C. Hsu*, Y. N. Lai, C. S. Lee, W. M. Chen, E. L. Huang, E. P. Yao, and C. W. Wang, “Performance Improvement in Poly(3-hexylthiophene):[6,6]-Phenyl C61 Butyric Acid Methyl Ester Polymer Solar Cell by Doping Wide-Gap Material Tris(phenylpyrazole)iridium,” Appl. Phys. Express, vol. 6, pp. 042301-1-4, Apr. 2013.

B. Y. Chou, W. C. Hsu*, C. S. Lee, H. Y. Liu, and C. S. Ho,“Comparative Studies of AlGaN/GaN MOS-HEMTs with Stacked Gate Dielectrics by Mixed Thin Film Growth Method,”Semicond. Sci. Technol., vol. 28, pp. 074005-1-6, Jul. 2013.

H. Y. Liu, B. Y. Chou, W. C. Hsu*, J. K. Sheu, C. S. Lee, and C. S. Ho,“Enhanced AlGaN/GaN MOS-HEMT Performance by Using Hydrogen Peroxide Oxidation Technique,” IEEE Trans. Electron Devices, vol.60, pp.213-220, Jan. 2013.

Y. C. Lin, Y. K. Luo, K. H. Chen, W. C. Hsu*,“Liquid Crystal Display (LCD) Supplied by Highly Integrated Dual-Side Dual-Output Switched-Capacitor DC-DC Converter With Only Two Flying Capacitors,” IEEE Trans. Circuits Syst. I-Regul. Pap., vol.59, pp.439-446, Feb. 2012.

Y. B. Liao, M. H. Chiang, K. Kim, W. C. Hsu*,“Assessment of structure variation in silicon nanowire FETs and impact on SRAM,” Microelectron. J., vol.43, pp.300-304, May. 2012.

Y. K. Luo, Y. P. Su, Y. P. Huang, Y. H. Lee, K. H. Chen, W. C. Hsu*,“Time-Multiplexing Current Balance Interleaved Current-Mode Boost DC-DC Converter for Alleviating the Effects of Right-half-plane Zero,” IEEE Trans. Power Electron., vol.27, pp.4098-4112, Sep. 2012

H. Y. Liu, B. Y. Chou, W. C. Hsu, C. S. Lee, and C. S. Ho, “Temperature-dependent investigation of AlGaN/GaN oxide-passivated HEMT by using hydrogen peroxide oxidation method,”ECS J. Solid State Sci. Technol.,vol. 1, Q86-Q90, Aug, 2012

H. Y. Liu, B. Y. Chou, W. C. Hsu*, C. S. Lee, and C. S. Ho, “A Simple Gate Dielectric Fabrication Process for AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors,” IEEE Electron Device Lett.,vol.33, pp.997 -999, Jul. 2012

C. S. Ho, C. S. Lee, W. C. Hsu*, C. Y. Lin, Y. N. Lai, and C. W. Wang, “Efficiency improvements in single-heterojunction organic photovoltaic cells by insertion of wide-bandgap electron-blocking layers,” Solid-State Electron., vol.76, pp.101 -103, Jul. 2012

C. S. Ho, E. L. Huang, W. C. Hsu*, C. S. Lee, Y. N. Lai, E. P. Yao, and C. W. Wang, “Thermal effect on polymer solar cells with active layer concentrations of 3-5wt%,” Synth. Met., vol. 162, pp. 1164-1168, Jun. 2012

C. S. Lee, C. T. Hung, B. Y. Chou, W. C. Hsu, H. Y. Liu, C. S. Ho and Y. N. Lai, “Comparative studies of MOS-gate/oxide-passivated AlGaAs/InGaAs pHEMTs by using ozone water oxidation technique,” Semicond. Sci. Technol., vol. 27, pp. 065006-(1-7), Jun. 2012

C. S. Lee, B. Y. Chou, M. Y. Lin, W. C. Hsu, H. Y. Liu, C. S. Ho, and Y. N. Lai, “Investigations on Al0.2Ga0.8As/In0.2Ga0.8As MOS-pHEMTs with Different Shifted Γ-Gate Structures,” ECS J. Solid State Sci. Technol., vol.1, pp. Q1-Q5, Jul. 2012.

J. K. Liou, Y. J. Liu, C. C. Chen, P. C. Chou, W. C. Hsu, and W. C. Liu, “On a GaN-Based Light-Emitting Diode With an Aluminum Metal Mirror Deposited on Naturally-Textured V-Shaped Pits Grown on the p-GaN Surface,” IEEE Electron Device Lett., vol.33, pp.227-229, Feb. 2012.

H. Y. Liu, B. Y. Chou, W. C. Hsu, C. S. Lee, and C. S. Ho, “Novel oxide-passivated AlGaN/GaN HEMT by using hydrogen peroxide treatment,” IEEE Trans. Electron Devices, vol. 58, no. 12, pp. 4430-4433, Dec. 2011. (SCI, EI)

Y. B. Liao, M. H. Chiang, K. Kim, and W. C. Hsu, “Assessment of Structure Variation in Silicon Nanowire FETs and Impact on SRAM,”Microelectron. J., vol. 43, no.5, pp. 300-304, Dec. 2011. (SCI, EI)

J. R. Huang, W. C. Hsu, Y. J. Chen, T. B. Wang, H. I. Chen, and W. C. Liu, “Investigation of Hydrogen-Sensing Characteristics of a Pd/GaN Schottky Diode,” IEEE Sens. J., vol. 11, pp. 1194-1200, May, 2011. (SCI, EI)

H. C. Yu, C. T. Wan, W. C. Chen, W. C. Hsu, K. H. Su, C. Y. Huang, and Y. K. Su, “Performance Improvement of InGaAsN/GaAs Quantum Well Lasers by Using Trimethylantimony Preflow,” Appl. Phys. Express, vol. 4, pp. 012103-1 – 012103-3, Jan. 2011. (SCI, EI)

C. S. Ho, E. L. Huang, W. C. Hsu, C. S. Lee, Y. N. Lai, and W. H. Lai, “Effects of Annealing on Polymer Solar Cells with High Polythiophene-Fullerene Concentrations,” Jpn. J. Appl. Phys, vol. 50, pp. 04DK21-1 – 04DK21-3, Apr., 2011. (SCI, EI)

Y. K. Luo, C. C. Chiou, C. H. Wu, K. H. Chen, and W. C. Hsu, “Transient Improvement by Window Transient Enhancement (WTE) and Overshoot Suppression (OSS) Techniques in Current Mode Boost Converter,” IEEE Trans. Power Electron. (SCI, EI)

C. S. Lee, B. Y. Chou, and W. C. Hsu, “A Novel Transparent AZO-Gated Al0.2Ga0.8As/In0.2Ga0.8As pHEMT and Photosensing Characteristics Thereof,” IEEE Trans. Electron Devices, vol. 58, pp. 725-731, Mar. 2011. (SCI, EI)

Y. N. Lai, W. C. Hsu, C. S. Lee, C. W. Wang, C. S. Ho, M. C. Shih, and W. F. Lai, “Improved Efficiency and High Color Purity of Top-Emission White Organic Light Emitting Diode by Anode Oxidation Technique,” Electrochemical and Solid State Letters, vol. 13, pp. J132-J135, Aug. 2010. (SCI, EI)

M. H. Chiang, Y. B. Liao, J. T. Lin, W. C. Hsu, C. Yu, P. C. Chiang, Y. Y. Hsu, W. H. Liu, S. S. Sheu, K. L. Su, M. J. Kao, and M. J. Tsai, “Low power design of phase-change memory based on a comprehensive model,” IET Computers and Digital Techniques, vol. 4, pp. 285-292, Jul. 2010. (SCI, EI)

W. C. Hsu, C. S. Lee, C. S. Ho, Y. N. Lai, J. C. Huang, B.Y. Chou, A. Y. Kao, H. H. Yeh, and C. L. Wu, “InAlAs/InGaAs MOS-MHEMTs by Using Ozone Water Oxidation Treatment,” Electrochemical and Solid State Letters, vol. 13, pp. H234-H236, Apr. 2010. (SCI, EI)

Y. N. Lai, W. C. Hsu, C. S. Lee, C. W. Wang, C. S. Ho, T. Y. Lu, and W. F. Lai, “Efficiency Improvement of Top-Emission Organic Light Emitting Diode by Using UV-Ozone, Doped Emission Layer, and Hole-Blocking Layer,” J. Electrochem. Society, vol. 157, pp. J25-J28, Dec. 2010. (SCI, EI)

Y. N. Lai, W. C. Hsu, C. S. Lee, C. W. Wang, S. W. Yeh, C. S. Ho, and W. F. Lai, “Improved white organic light-emitting Diodes with modified dual-emission-layer designs,” Jpn. J. Appl. Phys., vol. 48, pp. 072101, Jul. 2009. (SCI, EI)

W. C. Hsu, C. S. Lee, S. J. Yu, and Y. J. Chen, “High gate-voltage swing x-band amplifiers by using In0.425Al0.575As/InGaAs metamorphic high electronic mobility transistors,” J. Chinese Institute of Engineers, vol. 32, pp. 391-396, Apr. 2009. (SCI, EI)

C. S. Lee, W. C. Hsu, C. S. Ho, and A. Y. Kao, “Investigations on In0.45Al0.55As/InxGa1-xAs metamorphic high-electron-mobility transistors with double gate-recess and SiNx passivation,” J. Electrochem. Society, vol. 156, pp. H367-H371, Mar. 2009. (SCI, EI)

C. S. Lee, B. I. Chou, W. C. Hsu, and K. H. Su, “Investigations on the highly-Stable thermal characteristics of a dilute Al0.3Ga0.7As/In0.3Ga0.7As0.99N0.01/GaAs heterostructure field effect transistor (HFET),” Journal of Korean Physical Society, vol. 53, pp. 3328-3333, Dec. 2008. (SCI)

S. J. Yu, H. M. Huang, C. S. Lee, C. L. Wu, and W. C. Hsu, “ A 26-38 GHz millimeter-wave band APDP sub-harmonic mixer,” Microwave and Optical Technology Letters, vol. 50, pp. 2135-2138, Aug. 2008. (SCI, EI)

C. S. Lee, C. J. Chian, W. C. Hsu, K. H. Su, and S. J. Yu, “Channel composition-dependent characteristics of delta-doped InxAl1-xAs/InyGa1-yAs metamorphic high electron mobility transistors,” Journal of Korean Physical Society, vol. 52, pp. 1086-1092, Apr. 2008. (SCI)

K. H. Su, W. C. Hsu, C. S. Lee, P. J. Hu, Y. H. Wu, L. Chang, R. S. Hsiao, J. F. Chen, and T. W. Chi, “Investigations on highly stable thermal characteristics of a dilute In0.2Ga0.8AsSb/GaAs doped-channel field-effect transistor,” Semiconductor science and technology, vol. 23, pp. 045012, Apr. 2008. (SCI, EI)

T. H. Tsai, J. R. Huang, K. W. Lin, W. C. Hsu, H. I. Chen, and W. C. Liu, “Improved hydrogen sensing characteristics of Pt/SiO2/GaN Schottky diode”,Sensor Actuat. B-chem., vol. 129, pp. 292-302, Jan. 2008. (SCI, EI)

S. J. Yu, W. C. Hsu, C. S. Lee, C. S. Chang, C. L. Wu, and C. H. Chang, “A flat gain/power responses 6-18 ghz power amplifier mimic with high pae by using transformer networks,” Microwave and Optical Technology Letters, vol. 50, pp. 205-208, Jan. 2008. (SCI, EI)

D. H. Huang, W. C. Hsu, Y. S. Lin, and J. C. Huang, “Thermal-stable characteristics of metamorphic double delta-doped heterostructure field-effect transistor,” Jpn. J. Appl. Phys., part 1, vol. 46, pp. 6595-6597, Oct. 2007. (SCI, EI)

T. H. Tsai, J. R. Huang, K. W. Lin, C. W. Hung, W. C. Hsu, H. I. Chen, and W. C. Liu, “Improved hydrogen-sensing properties of Pt/SiO2/GaN Schottky diode,” Electrochemical and Solid State Letters, vol. 10, pp. J158-J160, Oct. 2007. (SCI, EI)

K. H Su, W. C. Hsu, P. J. Hu, Y. J. Chen, C. S. Lee, Y. S. Lin, and C. L. Wu, “An improved Symmetrically-Graded Doped-Channel Heterostructure Field-Effect Transistor,” Journal of the Korean Physical Society, vol. 50, pp. 1878-1882, Jun. 2007. (SCI)

S. J. Yu, W. C. Hsu, C. S. Lee, C. H. Chang, C. L. Wu and C. S. Chang, “A Ku-band Three-Stage MMIC Low-Noise Amplifier with Superiorly Low Thermal-Sensitivity Coefficients,” Microwave and Optical Technology Letters, vol. 49, pp. 1637-1641, Jul. 2007. (SCI, EI)

J. R. Huang, W. C. Hsu, H. I. Chen, and W. C. Liu, “ Comparative study of hydrogen sensing characteristics of a Pd/GaN Schottky diode in air and N2atmospheres,” Sensor Actuat. B-chem., vol. 123, pp. 1040-1048, May 2007. (SCI, EI)

K. H. Su, W. C. Hsu, C. S. Lee, P. J. Hu, R. S. Hsiao, J. F. Chen, and T. W. Chi, “Highly Stable Thermal Characteristics of a Novel In0.3Ga0.7As0.99N0.01(Sb)/GaAs High-Electron-Mobility Transistor,” Jpn. J. Appl. Phys., part 1, vol. 46, pp. 2344-2347, Apr. 2007. (SCI, EI)

D. H. Huang, W. C. Hsu, Y. S. Lin, J. H. Yeh, and J. C. Huang, “A metamorphic heterostructure field-effect transistor with a double delta-doped channel,” Semiconductor science and technology, vol. 22, pp. 784-787, Jul. 2007. (SCI, EI)

T. B. Wang, W. C. Hsu, I. L. Chen, T. D. Lee, K. H. Su, H. P. D. Yang and C. H. Chiou, “Single Mode InGaAs Photonic Crystal Vertical-Cavity Surface-Emitting Lasers emitting at 1170nm,” J. Electrochem. Society, vol. 154, pp. H351-H353, Mar. 2007. (SCI, EI)

I. L. Chen, W. C. Hsu, T. D. Lee, and C. H. Chiou, “Low threshold current density, highly strained InGaAs laser grown by MOCVD,” Thin Solid Film, vol. 515, pp. 4522-4525, Mar. 2007. (SCI, EI)

Y. S. Lin, D. H. Huang, Y. W. Chen, J. C. Huang, and W. C. Hsu, “delta-doped InGaP/GaAs heterostructure-emitter bipolar transistor grown by metalorganic chemical vapor deposition,” Thin Solid Film, vol. 515, pp. 3978-3981, Feb. 2007. (SCI, EI)

T. B. Wang, W. C. Hsu, J. L. Su, R. T. Hsu, Y. H. Wu, Y. S. Lin, and K. H. Su, “Comparison of Al0.32Ga0.68N/GaN heterostructure field-effect transistors with different channel thicknesses,” J. Electrochem. Society, vol. 154, pp. H131-H133, Jan. 2007. (SCI, EI)

J. C. Huang, W. C. Hsu, C. S. Lee, D. H. Huang, and Y. C. Yang, “High-Power-Density and High-Gain δ-Doped In0.425Al0.575As/In0.425Ga0.575As Low-Voltage for Operation,” J. Electrochem. Society, vol. 154, pp. H185-H190, Jan. 2007 (SCI, EI)

K. H. Su, W. C. Hsu, C. S. Lee, T. Y. Wu, Y. H. Wu, L. Chang, R. S. Hsiao, J. F. Chen, and T. W. Chi, “A Novel Dilute Antimony Channel In0.2Ga0.8AsSb/GaAs HEMT,” IEEE Electron Device Lett. vol. 153, pp. 96-99, Feb. 2007. (SCI, EI)

J. C. Huang, W. C. Hsu, C. S. Lee, W. C. Chang, and D. H. Huang, “Improved high-temperature characteristics of a symmetrically graded AlGaAs/InxGa1-xAs/AlGaAs pHEMT,” Semiconductor science and technology, vol. 21, pp. 1675-1680, Dec. 2006. (SCI, EI)

K. H. Su, W. C. Hsu, C. S. Lee, I. L. Chen, Y. J. Chen, and C.L. Wu, “Comparative studies of delta-doped In0.45Al0.55As/In0.53Ga0.47As/GaAs metamorphic HEMTs with Au, Ti/Au, Ni/Au, and Pt/Au gates,” J. Electrochem. Society, vol. 153, pp. G996-G1000, Sep. 2006. (SCI, EI)

T. B. Wang, W. C. Hsu, Y. W. Chen, and Y. J. Chen, “Inductively coupled plasma mesa etched InGaN/GaN light emitting diodes using Cl-2/BCl3/Ar plasma,” Jpn. J. Appl. Phys., vol. 45, pp. 6800-6802, Sep. 2006. (SCI, EI)

I. Lo, J. R. Lian, H. Y. Wang, M. H. Gau, J. K. Tsai, J. C. Chiang, Y. J. Li, and W. C. Hsu, “Magnetotransport study on the defect levels of delta-doped In0.22Ga0.78As/GaAs quantum wells,” J. Appl. Phys., vol. 100, pp. 063712, Sep. 2006. (SCI,EI)

J. R. Huang, W. C. Hsu, Y. J. Chen, T. B. Wang, K. W. Lin, H. I. Chen, and W. C. Liu, “Comparison of hydrogen sensing characteristics for Pd/GaN and Pd/Al0.3Ga0.7As Schottky diodes,” Sensor Actuat. B-chem., vol. 117 pp. 151-158, Sep. 2006. (SCI, EI)

D. H. Huang, W. C. Hsu, Y. S. Lin, J. C. Huang, and C. L. Wu, “Strain-relaxed In0.1Al0.25Ga0.65As/In0.22Ga0.78As/In0.1Al0.25Ga0.65As HEMT,” J. Electrochem. Society, vol. 153, pp. G826-G829, Jul. 2006. (SCI, EI)

I. L. Chen, W. C. Hsu, T. D. Lee, K. H. Su, C. H. Chiou, and G. Lin , “Temperature-dependent characteristics and burn-in performance of GaAs-based long-wavelength vertical-cavity surface-emitting lasers emitting at 1.26 mum,” Semiconductor science and technology, vol. 21, pp. 886-889, Jul. 2006. (SCI, EI)

D. H. Lee, W. C. Hsu, Y. S. Lin, Y. H. Wu, R. T. Hsu, J. C. Huang, and Y. K. Liao, “Comparative study of In0.52Al0.48As/InxGa1-xAs/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel,” Semiconductor science and technology, vol. 21, pp. 781-785, Jun. 2006. (SCI, EI)

C. S. Lee, Y. J. Cheng, W. C. Hsu, K. H. Su, J. C. Huang, D. H. Huang, and C. L. Wu, “High-temperature threshold characteristics of a symmetrically graded InAlAs/InxGa1-xAs/GaAs metamorphic high electron mobility transistor,” Appl. Phys. Lett., vol. 88 pp. 223506, May 2006. (SCI, EI)

J. C. Huang, W. C. Hsu, C. S. Lee, D. H. Huang, and M. F. Huang, “Characteristics of delta-doped InAlAs/InGaAs/InP high electron mobility transistors with a linearly graded InxGa1-xAs channel,” Semiconductor science and technology, vol. 21, pp. 619-625, May 2006. (SCI, EI)

Y. S. Lin., D. H. Huang, W. C. Hsu, K. H. Su, and T. B. Wang, “Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistors using emitter edge thinning,” Semiconductor science and technology, vol. 21 pp. 303-305, Mar. 2006. (SCI, EI)

Y. S. Lin, D. H. Huang, W. C. Hsu, T. B. Wang, K. H. Su, J. C. Huang, and C. H. Ho, “Improved InAlGaP-based heterostructure field-effect transistors,” Semiconductor science and technology, vol. 21, pp. 540-543, Apr. 2006. (SCI, EI)

C. S. Lee, W. C. Hsu, K. H. Su, J. C. Huang, D. H. Huang, and Y. J. Chen, “Ni/Au-Gate In0.45Al0.55As/In0.53Ga0.47As/InAlGaAs/GaAs metamorphic high-electron-mobility transistors,” Journal of the Korean Physical Society, vol. 48, pp. 653-657, Apr. 2006. (SCI)

S. J. Yu, W.C. Hsu, Y. J. Chen, and C. L. Wu, “High power and high breakdown delta-doped In0.35Al0.65As/In0.35Ga0.65As metamorphic HEMT,”Solid-State Electronic., vol. 50, pp. 291-296, Feb. 2006. (SCI, EI)

I. L. Chen, W. C. Hsu, H. C. Kuo, C. P. Sung, C. H. Chiou, J. M. Wang, Y. H. Chang, H. C. Yu, and T. D. Lee, “Effect of annealing on low-threshold-current large-wavelength InGaAs quantum well vertical-cavity laser,” Jpn. J. Appl. Phys., vol. 45, pp. 770-773, Feb. 2006. (SCI, EI)

W.C. Hsu, D. H. Huang, Y. S. Lin, Y. J. Chen, J. C. Huang, and C. L. Wu, “Performance improvement in tensile-strained In0.5A10.5As/InxGa1-xAs/In0.5A10.5As metamorphic HEMT,” IEEE Trans. Electron Devices, vol. 53, pp. 406-412, Mar. 2006. (SCI, EI)

I. L. Chen, W. C. Hsu, T. D. Lee, H. C. Kuo, K. H. Su, C. H. Chiou, J. M. Wang, and Y. H. Chang, “Growth of highly strained RnGaAs quantum wells by metalorganic chemical vapor deposition with application to vertical-cavity surface-emitting laser,” Jpn. J. Appl. Phys., vol. 45, pp. L54-L56, Jan. 2006. (SCI, EI)

Y. S. Lin, D. H. Huang, W. C. Hsu, T. B. Wang, R. T. Hsu, and Y. H. Wu, “n(+)-GaAs/p(+)-InAlGaP/n(+)-InAlGaP camel-gate high-electron mobility transistors,” Electrochemical and Solid State Letters, vol. 9, pp. G37-G39, Dec. 2006. (SCI, EI)

J. C. Huang, W. C. Hsu, C. S. Lee, Y. J. Chen, D. H. Huang, and H. H. Chen, “Investigations of delta-doped InAlAs/InGaAs/InP high-electron-mobility transistors with linearly graded InxGa1-xAs channel,” Jpn. J. Appl. Phys., vol. 44, pp. 8305-8308, Dec. 2005. (SCI, EI)

C. S. Lee, H. H. Chen, J. C. Huang, W. C. Hsu, and Y. J. Chen, “Investigations of delta-doped In0.52Al0.48As/InxGa1-xAs/InP HEMTs with different channel structures,” Journal of the Korean Physical Society, vol. 47, pp. 1046-1052, Dec. 2005. (SCI)

I. L. Chen, W. C. Hsu, H. C. Kuo, H. C. Yu, C. P. Sung, C. M. Lu, C. H. Chiou, J. M. Wang, Y. H. Chang, T. D. Lee, and J. S. Wang, “Low-threshold-current-density, long-wavelength, highly strained InGaAs laser grown by metalorganic chemical vapor deposition,” Jpn. J. Appl. Phys., vol. 44, pp. 7485-7487, Oct. 2005. (SCI, EI)

Y. J. Chen, C. S. Lee, T. B. Wang, W. C. Hsu, Y. W. Chen, K. H. Su, and C. L. Wu, “Improved In0.45Al0.55As/In0.45Ga0.55As/In0.65Ga0.35As Inverse Composite Channel Metamorphic HEMT,” Jpn. J. Appl. Phys., vol. 44, pp. 5903-5908, Aug. 2005. (SCI, EI)

C. S. Lee, and W. C. Hsu, “Functional characteristics in asymmetric source/drain InAlAsSb/InGaAs/InP delta-doped high electron mobility transistor,”Appl. Phys. Lett., vol. 86, pp. 033505, Aug. 2005. (SCI, EI)

Y. J. Chen, C. S. Lee, T. B. Wang, W. C. Hsu, Y. W. Chen, K. H. Su, and C. L Wu, “Improved In0.45Al0.55As/In0.45Ga0.55As/In0.65Ga0.35As inverse composite channel metamorphic high electron mobility transistor,” Jpn. J. Appl. Phys., part 1, vol. 44, pp. 5903-5908, Aug. 2005. (SCI, EI)

W. C. Hsu, Y. J. Chen, C. S. Lee, T. B. Wang, J. C. Huang, D. H. Huang, K. H. Su, Y. S. Lin, and C. L. Wu, “Characteristics of In0.425Al0.575As/InxGa1-xAs Metamorphic HEMTs with Pseudomorphic and Symmetrically-Graded Channels,” IEEE Trans. Electron Devices, vol. 52, pp. 1079-1086, Jun. 2005. (SCI, EI)

Y. J. Chen, W. C. Hsu, Y. W. Chen, Y. S. Lin, R. T. Hsu, and Y. H. Wu, “InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations,” Solid-State Electronic., 49, pp.163-166, Feb. 2005. (SCI, EI)

W. C. Hsu, Y. J. Chen, C. S. Lee, T. B. Wang, Y. S. Lin, and C. L. Wu, “High-temperature thermal stability performance in δ-doped In0.425Al0.575As/In0.65Ga0.35As metamorphic HEMT,” IEEE Electron Device Lett., vol. 26, pp. 59-61, Feb. 2005. (SCI, EI)

C. S. Lee, W. C. Hsu, J. C. Huang, Y. J. Chen, and H. H. Chen, “Monolithic AlAs/InGaAs/InGaP/GaAs Heterostructure Resonant Tunneling Field-Effect Transistors with PVCR of 960 at 300 K,” IEEE Electron Device Lett., vol. 26, pp. 50-52, Feb. 2005. (SCI, EI)

C. S. Lee, W. C. Hsu, W. L. Yang, Y. J. Chen, J. C. Huang, and H. H. Chen, “Analytic Modeling for Current-Voltage Characteristics and Drain-Induced Barrier-Lowering (DIBL) Phenomenon of the InGaP/InGaAs/GaAs PDCFET,” Journal of the Korean Physical Society , vol. 45, pp. S513-S518, Dec. 2004. (SCI)

Y. J. Chen, W. C. Hsu, C. S. Lee, T. B. Wang, C. H. Tseng, J. C. Huang, D. H. Huang, and C. L. Wu, “Gate-alloy-related kink effect for metamorphic high-electron-mobility transistors,” Appl. Phys. Lett., vol. 85, pp.5087-5089, Nov. 2004. (SCI, EI)

Y. S. Lin, W. C. Hsu, F. C. Jong, Y. Z. Chiou, Y. J. Chen, and J. J. Tang, “Characteristics of spike-free single and double heterostructure-emitter bipolar transistors,” Jpn. J. Appl. Phys., vol. 43, pp. 3285-3288, Part 2, Jun. 2004. (SCI, EI)

Y. J. Li, W. C. Hsu, I. L. Chen, C. S. Lee, Y. J. Chen, and I. Lo, “Improved characteristics of metamorphic InAlAs/InGaAs HEMT with symmetric graded InxGa1-xAs channel,” J. Vac. Sci. Technol. B, vol. 22, p. 2429, Oct. 2004. (SCI, EI)

S. J. Yu, W. C. Hsu, Y. J. Li, and Y. J. Chen, “Improved step-graded-channel heterostructure field-effect transistor,” Jpn. J. Appl. Phys., part 1, vol. 43, pp. 5942-5944, Feb. 2004. (SCI, EI)

Y. W. Chen, Y. J. Chen, W. C. Hsu, R. T. Hsu, Y. H. Wu, and Y. S. Lin, “Enhancement-mode In0.52Al0.48As/In0.6Ga0.4As tunneling real space transfer HEMT,” J. Vac. Sci. Technol. B, vol. 22, p.p. 974-976, Jun. 2004. (SCI, EI)

Y. W. Chen, W. C. Hsu, R. T. Hsu, Y. H. Wu, Y. J. Chen, and Y. S. Lin, “Characteristics of In0.52Al0.48As/InxGa1-xAsyP1-y/In0.52Al0.48As high electron-mobility transistors,” J. Vac. Sci. Technol. B, vol. 22, p.p. 1044-1046, Jun. 2004. (SCI, EI)

I. L. Chen, W. C. Hsu, C. M. Lu, C. H. Chiou, Z. Hong Lee, and T. D. Lee, “Characteristics of GaAs-based Long-wavelength, highly strained InGaAs Quantum Well Vertical-cavity Laser,” Jpn. J. Appl. Phys., vol. 43, pp. L725-L727, Jun. 2004. (SCI, EI)

C. S. Lee, and W. C. Hsu, “Double-transconductance-plateau characteristics in InGaAs/GaAs real-space transfer high-electron-mobility transistor”,Appl. Phys. Lett., vol. 84, pp. 3618-3620, May. 2004. (SCI, EI)

Y. W. Chen, W. C. Hsu, R. T. Hsu, Y. H. Wu, and Y. J. Chen, “Characteristics of In0.52Al0.48As/InxGa1-xAs HEMT's with various InxGa1-xAs channels,” Solid-State Electronics, vol. 48, pp. 119-124, Jan. 2004. (SCI, EI)

Y. W. Chen, W. C. Hsu, R. T. Hsu, Y. H. Wu, and Y. J. Chen, “Low dark current InGaAs(P)/InP p-i-n photodiodes,” Jpn. J. Appl. Phys., part 1, vol. 42, pp. 4249-4252, Jul. 2003. (SCI, EI)

C. S. Lee and W. C. Hsu, “Off-State Breakdown Modeling for High-Schottky-Barrier δ-Doped In0.49Ga0.51P/In0.25Ga0.75As/InP High Electron Mobility Transistor,” Jpn. J. Appl. Phys., part 1, vol. 42, pp. 4253-4256, Jul. 2003. (SCI, EI)

Y. J. Li, W. C. Hsu, Y. W. Chen, and H. M. Shieh, “Depletion- and enhancement-mode In0.49Ga0.51P/InGaAs/AlGaAs HEMTs with high breakdown voltage,” J. Vac. Sci. Technol. B, vol. 21, pp. 981-983, Jun. 2003. (SCI, EI)

Y. J. Li, W. C. Hsu, and S. Y. Wang, “Temperature-dependent characteristics of Al0.2Ga0.8As/In0.22Ga0.78As pseudomorphic double heterojunction modulation doped field-effect transistor with a GaAs/AlGaAs superlattice buffer layer,” J. Vac. Sci. Technol. B, vol. 21, pp. 760-762, Apr. 2003. (SCI, EI)

C. S. Lee and W. C. Hsu, “Bias-Tunable Multiple-Transconductance with Improved Transport Characteristics of δ-doped In0.28Ga0.72As/GaAs/In0.24Ga0.76As/GaAs High Electron Mobility Transistor Using a Graded Superlattice Spacer,” Jpn. J. Appl. Phys., part 1, vol. 42, pp. 1545-1547, Apr. 2003. (SCI, EI)

Y. W. Chen, W. C. Hsu, R. T. Hsu, Y. H. Wu, Y. J. Chen, and L. S. Lin, “Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base,” J. Vac. Sci. Technol. B, vol. 21, pp.2555-2557, Dec. 2003. (SCI, EI)

C. S. Lee, W. C. Hsu, and C. L .Wu, “Analytic Modeling for Drain-Induced Barrier Lowering (DIBL) Phenomenon of the InGaP/InGaAs/GaAs Pseudomorphic Dopd-Channel Field-Effect Transistor,” Jpn. J. Appl. Phys., part 1, vol. 41, pp. 5919-5923, Sep. 2002. (SCI, EI)

Y. W. Chen, W. C. Hsu, H. M. Shieh, Y. J. Chen, Y. S. Lin, Y. J. Li, and T. B. Wang, “High Breakdown Characteristic d-doped InGaP/InGaAs/AlGaAs Tunneling Real Space Transfer HEMT,” IEEE Trans. Electron Devices, vol. 49, pp.221-225, Feb. 2002. (SCI, EI)

W. C. Hsu, C. S. Lee, and Y. S. Lin, “Characteristics of d-doped InP heterostructures using In0.34Al0.66As0.85Sb0.15 Schottky layer,” Journal of Applied Physics, vol. 91, pp.1385-1390, Feb. 2002. (SCI, EI)

C. S. Lee and W. C. Hsu, “Analytic modeling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors,” Superlattices and Microstructures, vol. 30, pp.145-158, Sep. 2001. (SCI, EI)

C. S. Lee, W. C. Hsu, S. S. Li, and P. Ho, “A delta-doped In0.24Ga0.76As/GaAs pseudomorphic high electron mobility transistor using a graded superlattice spacer,” Superlattices and Microstructures, vol. 29, pp. 329-334, May 2001. (SCI, EI)

Y. J. Chen, Y. W. Chen, Y. S. Lin, C. Y. Yeh, Y. J. Li and W. C. Hsu, “An Improved In0.34Al0.66As0.85Sb0.15/InP Heterostructure Utilizing Coupled d-Doping InP Channel,” Jpn. J. Appl. Phys., vol. 40, pp. L7-L9, Part 2, Jan. 2001. (SCI, EI)

C. S. Lee, W. C. Hsu, Y. W. Chen, Y. C. Chen, and H. M. Shieh, “High-Temperature Breakdown Characteristics of d-Doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs High Electron Mobility Transistor,” Jpn. J. Appl. Phys., vol. 39, pp. L1029-L1031, Part 2, Oct. 2000. (SCI, EI)

C. S. Lee, W. C. Hsu, H. M. Shieh, J. S. Su, S. Y. Jain, and W. Lin, “A novel dual-mode In0.34Al0.66As.85Sb0.15/In0.75Ga0.25As/InP inverted d-doped heterostructure field-effect transistor,” Solid-State Electronics, vol. 44, pp.1635-1640, Sep. 2000. (SCI, EI)

Y. J. Li, J. S. Su, Y. S. Lin, and W. C. Hsu, “Investigation of a graded channel InGaAs/GaAs heterostructure transistor,” Superlattices and Microstructures, vol. 28, pp. 47-53, Jul. 2000. (SCI, EI)

Y. S. Lin, W. C. Hsu, H. M. Shieh, and C. Y. Yeh, “In0.34Al0.66As0.85Sb0.15/d(n+)-InP heterostructure field-effect transistors,” Appl. Phys. Lett., vol. 76, pp. 3124-3126, May 2000. (SCI, EI)

Y. S. Lin, W. C. Hsu, and C. S. Yang, “Low leakage current and high breakdown voltage GaAs-based heterostructure field effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer,” Appl. Phys. Lett., vol. 75, pp. 3551-3553, Nov. 1999. (SCI, EI)

Y. J. Li, H. M. Shieh, J. S. Su, M. J. Kao, and W. C. Hsu, “Improved double delta-doped InGaAs/GaAs heterostructures with symmetric graded channel,” Materials Chemistry and Physics, vol. 61, pp.266-269, Nov. 1999. (SCI, EI)

Y. S. Lin, W. C. Hsu, C. H. Wu, W. Lin, and R. T. Hsu, “High breakdown voltage symmetric double delta-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor,” Appl. Phys. Lett., vol. 75, pp. 1616-1618, Sep. 1999. (SCI, EI)

Y. S. Lin, W. C. Hsu, S. Y. Lu, and W. Lin, “An improved heterojunction-emitter bipolar transistor using delta-doped and spacer layer,” Materials Chemistry and Physics, vol. 59, pp. 91-95, Apr. 1999. (SCI, EI)

J. S. Su, W. C. Hsu, W. Lin, and S. Y. Jain, “High Breakdown Characteristics of The InP-Based Heterostructure Field-Effect Transistor with In0.34Al0.66As0.85Sb0.15 Schottky Layer,” IEEE Electron Device Lett., vol. 19, pp.195-197, Jun. 1998. (SCI, EI)

R. T. Hsu, Y. S. Lin, J. S. Su, W. C. Hsu, Y. H. Wu, and M. J. Kao, “Study of two-dimensional hole gas concentration and hole mobility in zinc delta-doped GaAs and pseudomorphic GaAs/In0.2Ga0.8As heterostructures,” Superlattices & Microstructures, vol. 24, pp. 175-180, Aug. 1998. (SCI, EI)

Y. S. Lin, H. M. Shieh, W. C. Hsu, J. S. Su, J. Z. Huang, Y. H. Wu, and S. D. Ho, “Electrical characteristics of heterostructure-emitter bipolar transistors using spacers layers,” J. Vac. Sci. Technol. B, vol. 16, pp. 958- 961, Jun. 1998. (SCI, EI)

J. S. Su, W. C. Hsu, W. Lin, and Y. S. Lin, “Enhanced real-space transfer in delta-doped GaAs/In0.1Ga0.9As/In0.25Ga0.75As two-step channel heterojunctions,” J. Appl. Phys., vol. 82 , pp. 4076-4080, Oct. 1997. (SCI, EI)

Y. S. Lin, Y. H. Wu, J. S. Su, W. C. Hsu, S. D. Ho and W. Lin, “An Improved In0.5Ga0.5As Double Heteostructure-Emitter Bipolar Transistor Using Emitter Edge-Thinning Technique,” Jpn. J. Appl. Phys., vol. 36, pp. 2007-2009, Apr. 1997. (SCI, EI)

J. S. Su, W. C. Hsu, Y. S. Lin, and W. Lin, “Controllable Drain Cut-in Voltage with Strong Negative Differential Resistance in GaAs/InGaAs Real-Space Transfer Heterostructure,” Appl. Phys. Lett., vol. 70, pp. 1002-1004, Feb. 1997. (SCI, EI)

J. S. Su, W. C. Hsu, D. T. Lin, W. Lin, H. P. Shiao, Y. S. Lin, J. Z. Huang, and P. J. Chou, “High-breakdown voltage Al0.66In0.34As0.85Sb0.15/In0.75Ga0.25As/InP heterostructure field-effect transistors,” Electronics Lett., vol. 32, pp. 2095-2097, Oct. 1996. (SCI, EI)

M. J. Kao, H. M. Shieh, W. C. Hsu, T. Y. Lin, Y. H. Wu, and R. T. Hsu, “Investigation of the electron transfer characteristics in multi-delta-doped GaAs FET's,” IEEE Trans. Electron Devices, vol. 43, pp. 1181-1186, Aug. 1996. (SCI, EI)

I. Lo, M. J. Kao, W. C. Hsu, K. K. Kuo, Y. C. Chang, H. M. Weng, J. C. Chiang, and F. Tsay, “Photo-induced electron coupling in delta-doping GaAs /InGaAs quantum wells,” Physical Review B, vol. 54, pp. 4774-4779, Aug. 1996. (SCI, EI)

R. T. Hsu, W. C. Hsu, J. S. Wang, M. J. Kao, Y. H. Wu, and J. S. Su, “Study of zinc-delta-doped strained quantum well InGaAs/GaAs p-channel heterostructure field-effect transistors,” Jpn. J. Appl. Phys., part 1, vol. 35, pp. 13-17, Apr. 1996. (SCI, EI)

J. S. Su, W. C. Hsu, Y. S. Lin, W. Lin, C. L. Wu, M. S. Tsai, and Y. H. Wu, “A novel InAlAs/InGaAs two-terminal real-space transfer diode,” IEEE Electron Device Lett., vol. 17, pp. 43-45, Feb. 1996. (SCI, EI)

L. W. Laih, W. C. Liu, J. H. Tsai, W. C. Hsu, Y. T. Ting, and R. C. Liu, “Anomalous negative-differential-resistance (NDR) characteristics of n+-GaAs/n--GaAs/n-In0.2Ga0.8As/i-GaAs structure,” Superlattices & Microstructures, vol. 20, pp. 7-13, Jun. 1996. (SCI, EI)

C. L. Wu and W. C. Hsu, “Enhanced resonant tunneling real-space transfer in delta-doped GaAs/InGaAs gated dual-channel transistors grown by MOCVD,” IEEE Trans. Electron Devices, vol. 43, pp. 207-212, Feb. 1996. (SCI, EI)

C. L. Wu, W. C. Hsu, H. M. Shieh, and M. J. Kao, “Depletion- MIS- like InGaAs/GaAs delta-doped structures with high breakdown voltage and large gate voltage swing,” Solid-State Electron., vol. 38, pp. 433-436, Feb. 1995. (SCI, EI)

Y. H. Wu, J. S. Su, W. C. Hsu, W. Lin, W. C. Liu, M. J. Kao, and R. T. Hsu, “Emitter edge-thinning effect on InGaAs/InP double-heterostructure-emitter bipolar transistor,” Jpn. J. Appl. Phys., part 1, vol. 34, pp. 5908-5911, Nov. 1995. (SCI, EI)

Y. H. Wu, J. S. Su, W. C. Hsu, W. C. Liu, and W. Lin, “Electrical characteristics of a lattice-matched In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor with zero potential spike at emitter-base heterojunction,” Solid-State Electron., vol. 38 , pp. 1755-1757, Oct. 1995. (SCI, EI)

L. W. Laih, J. H. Tsai, W. C. Liu, W. C. Hsu, and W. S. Lour, “Investigation of an InGaAs-GaAs Doped-channel MIS-like pseudomorphic transistor,”Solid-State Election., vol. 38, pp. 1747-1753, Oct. 1995. (SCI, EI)

W. C. Liu, L. W. Laih, J. H. Tsai, W. C. Hsu, C. Z. Wu, K .B. Thei, and W. S. Lour, “Observation of the anomalous current-voltage characteristics of GaAs/n(+)-InGaAs/GaAs doped-channel structure,” Appl. Phys. Lett., vol. 67, pp. 404-406, Jul. 1995. (SCI, EI)

M. J. Kao, W. C. Hsu, H. M. Shieh, and T. Y. Lin, “Improved mobilities and concentrations in double-quantum-well InGaAs/GaAs pseudomorphic HFETs using multi-coupled GaAs,” Solid-State Election., vol. 38, pp. 1171-1173, Jun. 1995. (SCI, EI)

M. J. Kao, W. C. Hsu, R. T. Hsu, Y. H. Wu, T. Y. Lin, and C. Y. Chang, “Characteristics of a graded-like multi-delta-doped GaAs field-effect transistor,” Appl. Phys. Lett., vol. 66, pp. 2505-2506, May 1995. (SCI, EI)

W. C. Hsu, C. L. Wu, M. S. Tsai, C. Y. Chang, W. C. Liu, and H. M. Shieh, “Characterization of high performance inverted delta-modulation-doped (IDMD) GaAs/InGaAs pseudomorphic heterostructure FET's,” IEEE Trans. Electron Devices, vol. 42, pp. 804-809, May 1995. (SCI, EI)

R. T. Hsu, W. C. Hsu, M. J. Kao, Y. H. Wu, and J. S. Wang, “Characteristics of a delta-doped GaAs/InGaAs p-channel heterostructure field-effect transistor,” Appl. Phys. Lett., vol. 66, pp. 2864-2866, May 1995. (SCI, EI)

Y. H. Wu, J. S. Su, W. C. Hsu, W. C. Liu, and W. Lin, “Characteristics of In0.53Ga0.47As/InP double and single heterostructure-emitter bipolar transistors grown by LP-MOCVD,” Solid-State Electron., vol. 38, pp. 767-769, Apr. 1995. (SCI, EI)

C. L. Wu, W. C. Hsu, H. M. Shieh, and M. S. Tsai, “A novel delta-doped GaAs/InGaAs real-space transfer transistor with high peak-to-valley ratio and high current driving capability,” IEEE Electron Device Lett., vol. 16, pp. 112-114, Mar. 1995. (SCI, EI)

R. T. Hsu, M. J. Kao, J. S. Wang, and W. C. Hsu, “Characteristics of delta-doped InGaAs/GaAs pseudomorphic double-quantum-well high electron mobility transistors,” J. Vac. Sci. Technol. B, vol. 13, pp. 273-275, Apr. 1995. (SCI, EI)

W. C. Liu, W. C. Hsu, L. W. Laih, J. H. Tsai, and W. S. Lour, “Performance enhancement in a metal-insulator-semiconductor-like pseudomorphic transistor by utilizing an n--GaAs/n+-In(0.2)Ga(0.8)As two-layer structure,” Appl. Phys. Lett., vol. 66, pp. 1524-1526, Mar. 1995. (SCI, EI)

D. F. Guo, L. W. Laih, J. H. Tsai, and W. C Hsu, “Characteristics of a GaAs-InGaAs quantum-well resonant-tunneling switch,” J. Appl. Phys., vol. 77, pp. 2782-2785, Mar. 1995. (SCI, EI)

C. L. Wu, W. C. Hsu, M. S. Tsai, and H. M. Shieh, “Very strong negative differential resistance real space transfer transistor using multiple delta-doping GaAs/InGaAs pseudomorphic heterostrcuture,” Appl. Phys. Lett., vol. 66, pp. 739-741, Feb. 1995. (SCI, EI)

Y. H. Wu, J. S. Su, W. C. Hsu, W. C. Liu, and W. Lin, “A new InP-based heterojunction bipolar transistor utilizing an In0.53Al0.22Ga0.25As base,” Appl. Phys. Lett., vol. 66, pp. 347-348, Jan. 1995. (SCI, EI)

M. J. Kao, W. C. Hsu, H. M. Shieh, W. C. Liu, and C. Y. Chang, “High carrier density and mobility in GaAs/InGaAs/GaAs double delta-doped channels heterostructures,” Jpn. J. Appl. Phys., vol. 34, pp. L1-L3, Jan. 1995. (SCI, EI)

R. T. Hsu, W. Lin, W. C. Hsu, and J. S. Su, “Mobility Enhancement in Highly Strained δ-Doped InP/InGaAs/InP Heterostructure with InGaP Cap Layer Grown by Low-Pressure Metalorganic Chemical Vapor Deposition,” Jpn. J. Appl. Phys., vol. 33, pp. 6514-6515, Dec. 1994. (SCI, EI)

C. L. Wu, W. C. Hsu, H. M. Shieh, and M. S. Tsai, “High performance three-terminal delta-doped GaAs negative resistance field-effect transistor based on real-space transfer,” Electronics Lett., vol. 30, pp.1537-1539, Sep. 1994. (SCI, EI)

C. L. Wu, W. C. Hsu, M. S. Tsai, and H. M. Shieh, “A four-terminal GaAs multiple-function transistor with a buried silicon-doping quantum well,” Jpn. J. Appl. Phys., vol. 33, pp. L1393-1395, Oct. 1994. (SCI, EI)

C. L. Wu, W. C. Hsu, H. M. Shieh, and M. S. Tsai, “An improved inverted delta-doped GaAs/InGaAs pseudomorphic heterostructure grown by MOCVD,” IEEE Electron Device Lett., vol. 15, pp. 330-332, Sep. 1994. (SCI, EI)

H. M. Shieh, C. L. Wu, W. C. Hsu, Y. H. Wu, and M. J. Kao, “Enhanced two-dimensional electron gas concentrations and mobilities in multiple delta-doped GaAs/In0.25Ga0.75As/GaAs pseudomorphic heterostructures,” Jpn. J. Appl. Phys., vol. 33, pp. 1778-1780, Apr. 1994. (SCI, EI)

C. L. Wu, W. C. Hsu, H. M. Shieh, and W. C. Liu, “Mobility enhancement in double delta-doped GaAs/InxGa1-xAs/GaAs pseudomorphic structures by grading the heterointerfaces,” Appl. Phys. Lett., vol. 64, pp. 3027-3029, Jun. 1994. (SCI, EI)

R. T. Hsu, W. Lin, M. J. Kao, Y. H. Wu, and W. C. Hsu, “Mobility enhancement in a highly strained delta-doped In(0.9)Ga(0.1)P/In(0.75)Ga(0.25)As/In(0.53)Ga(0.47)As/InP heterostructure,” Thin Solid Films, vol. 245, pp. 164-166, May 1994. (SCI, EI)

W. C. Hsu, H. M. Shieh, C. L. Wu, and T. S. Wu, “A high performance symmetric double delta-doped GaAs/InGaAs/GaAs pseudomorphic HFET's grown by MOCVD,” IEEE Trans. Electron Devices, vol. 41, pp. 456-457, Mar. 1994. (SCI, EI)

C. L. Wu, W. C. Hsu, and H. M. Shieh, “Secondary-ion mass spectrometry analysis in pseudomorphic GaAs/InGaAs/GaAs heterostructures utilizing delta-doping superlattice,” J. Appl. Phys., vol. 75, pp. 608-610, Jan. 1994. (SCI, EI)

H. M. Shieh, W. C. Hsu, M. J. Kao, and C. L. Wu, “Influences of delta-doping time and spacer thickness on the mobility and two-dimensional electron gas concentration delta-doped GaAs/InGaAs/GaAs pseudomorphic heterostructures,” J. Vac. Sci. Technol. B, vol. 12, pp. 154-157, Feb. 1994. (SCI, EI)

H. M. Shieh, W. C. Hsu, R. T. Hsu, C. L. Wu, and T. S. Wu, “A high performance delta-doped GaAs/In(x)Ga(1-x)As pseudomorphic high electron mobility transistor utilizing a graded In(x)Ga(1-x)As channel,” IEEE Electron Device Lett., vol. 14, pp. 581-583, Dec. 1993. (SCI, EI)

M. J. Kao, W. C. Hsu, and H. M. Shieh, “Improved selectively delta-doped GaAs/InGaAs double-quantum-well pseudomorphic HFET's utilizing a buried p-layer on the buffer,” Jpn. J. Appl Phys. part II, vol. 32, pp. L503-505, Oct. 1993. (SCI, EI)

H. M. Shieh, W. C. Hsu, and C. L. Wu, “Improved GaAs/In0.25Ga0.75As/GaAs pseudomorphic heterostructure by growing double delta-doping GaAs layers on both sides of the channel,” Solid-State Electron., vol. 36, pp.1235-1237, Sep. 1993. (SCI, EI)

W. C. Hsu, H. M. Shieh, M. J. Kao, R. T. Hsu, and Y. H. Wu, “On the Improvement of Gate Voltage Swings in δ-Doped GaAs/InxGa1-xAs/GaAs Pseudomorphic Heterostructures,” IEEE Trans. Electron Devices, vol. 40, pp. 1630-1635, Sep. 1993. (SCI, EI)

R. T. Hsu, H. M. Shieh, W. C. Hsu, and T. S. Wu, “Enhanced Current Driving Capability GaAs/Graded InxGa1-xAs High Electron Mobility Transistor,”Solid-State Electron., vol. 36, pp. 1143-1146, Aug. 1993. (SCI, EI)

H. M. Shieh, W. C. Hsu, M. J. Kao, C. L. Wu, and T. S. Wu, “A new delta-doped InGaAs/GaAs pseudomorphic high electron mobility transistor utilizing a strained superlattice spacer,” Solid-State. Electron., vol. 36, pp. 1117-1119, Aug. 1993. (SCI, EI)

W. C. Hsu, D. F. Guo, W. C. Liu, and W. S. Lour, “A tristate switching device with double delta-doped quantum well structure,” Solid-State Electron., vol. 36, pp. 1089-1092, Aug. 1993. (SCI, EI)

D. F. Guo, W. C. Yeou, W. S. Lour, W. C. Hsu, and W. C. Liu, “Regenerative switching phenomenon of a GaAs metal-n-delta(p+)-n-n(+) structure,”Jpn. J. Appl. Phys., vol. 32, pp. L1011-1013, Jul. 1993. (SCI, EI)

H. M. Shieh, W. C. Hsu, and C. L. Wu, “Very high two-dimensional electron gas concentrations with enhanced mobilities in selectively double-delta-doped GaAs/InGaAs pseudomorphic single quantum well heterostructures,” Appl. Phys. Lett., vol. 63, pp.509-511, Jul. 1993. (SCI, EI)

W. C. Hsu. D. F. Guo, W. C. Liu, and W. S. Lour, “Characteristics of a GaAs-InGaAs delta-doped quantum-well switch,” J. Appl. Phys., vol. 73, pp. 8615-8617, Jun. 1993. (SCI, EI)

W. C. Liu, C. S. Sun, W. C. Hsu, and D. F. Guo, “Application of doping-superlattice collector structure for GaAs bipolar transistor,” Jpn. J. Appl. Phys., vol. 32, pp. 1575-1582, Apr. 1993. (SCI, EI)

H. M. Shieh, W. C. Hsu, C. L. Wu, and T. S. Wu, “High performance double delta doping GaAs/In0.25Ga0.75As/GaAs pseudomorphic heterostructure,”Jpn. J. Appl. Phys., vol. 32, pp. L303-305, Mar. 1993. (SCI, EI)

W. C. Hsu, W. C. Liu, D. F. Kuo, and W. S. Lour, “GaAs-InGaAs double delta-doped quantum-well switching device prepared by molecular beam epitaxy,” Appl. Phys. Lett., vol. 62, pp. 1504-1506, Mar. 1993. (SCI, EI)

W. C. Hsu and H. M. Shieh, “A delta-doped In(0.37)Ga(0.63)As/GaAs high electron mobility transistor prepared by low-pressure MOCVD,” Solid-State Electron., vol. 35, pp. 635- 638, May 1992. (SCI, EI)

H. M. Shieh, T. S. Wu, and W. C. Hsu, “SiH4-doped AlGaAs epilayers formed by MOCVD,” J. Cryst. Growth, vol. 121, pp. 665-670, Aug. 1992. (SCI, EI)

W. C. Hsu, S. Z. Chang, and W. Lin, “A Study of Layer Thickness and Interface Qualities of Strained InxGa1-xAs/GaAs Layers,” Jpn. J. Appl. Phys., vol. 31, pp. 26-29, Jan. 1992. (SCI, EI)

W. C. Hsu, C. M. Chen and W. Lin, “Variation of the mobility and the 2DEG concentration in delta-doped GaAs/In(x)Ga(1-x)As/GaAs structures,” J. Appl. Phys., vol. 70, pp. 4332-4335, Oct. 1991. (SCI, EI)

W. C. Hsu, C. M. Chen, and R. T. Hsu, “A dalta-doped GaAs/graded In(x)Ga(1-x)As/GaAs pesudomorphic structure by low-pressure metalorganic chemical vapor deposition,” Appl. Phys. Lett., vol. 59, pp. 1075-1077, Aug. 1991. (SCI, EI)

C. Y. Chang, W. Lin ,W. C. Hsu, T. S. Wu, S. Z. Chang, and C. Wang, “The delta-doped In0.25Ga0.75As pseudomorphic high electron mobility transistor structures prepared by low-pressure metal organic chemical vapor deposition,” Jpn. J. Appl. Phys., vol. 30, pp. 1158-1163, Jun. 1991. (SCI, EI)

W. C. Hsu, W. Lin, and C. Wang, “A quatum well delta-doped GaAs FET fabricated by low-pressure metal organic chemical vapor deposition,” Solid-StateElectron., vol. 34, pp. 649-653, Jun. 1991. (SCI, EI)

W. Lin, W. C. Hsu, T. S. Wu, S. Z. Chang, C. Wang, and C. Y. Chang, “Two-dimensional electron gases In(0.25)Ga(0.75)As/GaAs heterostructure,”Appl. Phys. Lett., vol. 58, pp. 2681-2683, Jun. 1991. (SCI, EI)

W. C. Liu, W. S. Lour, C. Y. Sun, R. L. Wang, and W. C. Hsu, “Study on beryllium-doped AlxGa1-xAs layers grown by molecular beam epitaxy,”Materials Science & Engineering B: Solid-State Materials for Advanced Technology, vol. 6, pp. 43-48, May 1990. (SCI)

W. C. Liu, W. C. Hsu, W. S. Lour, R. L. Wang, and C. Y. Chang, “MBE grown undoped superlattice gate and modulation-doped buffer structure for power FET applications,” Japanese Journal of Applied Physics, Part 2: Letters, vol. 28, pp. L904-L906, Jun. 1989. (SCI, EI)

W. C. Liu, C. Y. Chang, W. C. Hsu, W. S. Lour, and R. L. Wang, “SUPERLATTICE GATE AND GRADED SUPERLATTICE BUFFER FOR MICROWAVE-POWER METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR GROWN BY MOLECULAR-BEAM EPITAXY,”JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 7, pp. 589-592, Aug. 1989. (SCI, EI)

W. Lin, M. D. Lei, C. Y. Chang, W. C. Hsu, L. B. Di, and F. Kai, “The doped quantum well gate FET fabricated by low-pressure MOCVD,” Japanese Journal of Applied Physics, Part 2: Letters, vol. 27, pp. 2431-2433, Dec. 1988. (SCI, EI)

W. C. Hsu, C. Y. Chang, S. S. Hau, and S. J. Wang, “Observation of Bias-Dependent Capture-Emission Processes in MBE-grown GaAs Layers,” Solid-State Electronics, vol. 30, pp. 221-226, Feb. 1987. (SCI, EI)

Y. C. Chang, W. C. Hsu, C. M. Uang, Y. K. Fang, W. C. Liu, and B. S. Wu, “Personal Computer-Based Automatic Measurement System Applicable to Deep-Level Transient Spectroscopy,” Review of Scientific Instruments, vol. 55, pp. 637-639, Dec. 1984. (SCI, EI)

Y. C. Chang, W. C. Hsu, C. M. Uang, Y. K. Fang, and W. C. Liu, “A simple and Low-Cost Personal Computer-Based Automatic Deep-Level Transient Spectroscopy System for Semiconductor Devices Analysis,” IEEE Trans. Instrum. Meas., vol. 33, pp. 259-263, Dec. 1984, (SCI)

W. C. Liu, C. Y. Chang, W. C. Hsu, Y. K. Fang, B. S. Wu, and R. C. Liu, “The V-groove Technique in the Fabrication of High-Voltage Junction Devices,” International Journal of Electronics, vol. 55, pp. 417-424, 1983. (SCI, EI)

C. Y. Chang, M. K. Lee, Y. K. Su, and W. C. Hsu, “Enhancement of Growth Rate due to Tin Doping in GaAs Epilayer Grown by Low Pressure Metal-Organic Chemical Vapor Deposition,” Journal of Applied Physics, vol. 54, pp. 5464-5465, 1983. (SCI, EI)

Y. C. Chang, W. C. Hsu, T. Y. Chen, W. C. Liu, Y. K. Fang, and R. M. Chen, “The Analysis of Exponential Transients in Deep Level Periodic Transient Spectroscopy,” Electrochemical Society Extended Abstracts, vol. 82, pp. 369-370, 1982.

Y. C. Chang, W. C. Liu, W. C. Hsu, Y. K. Fang, and R. C. Liu, “Depletion Layer Characteristics Near the Surface of V-grooved High Voltage P-N Junction,” Electrochemical Society Extended Abstracts, vol. 82, p. 372, 1982.

C. Y. Chang, Y. K. Fang, B. S. Wu, S. R. Wang, W. C. Hsu, and W. C. Liu, “An MIS Solar Cell Made on Plasma Hydrogenated Polycrystalline Silicon,” The Electrochemical Society, vol. 82, pp. 372-376, 1982.

C. Y. Chang, W. C. Liu, W. C. Hsu, and Y. K. Fang, “A New Technique for High-Voltage Devices,” J. Electrochem. Society, vol. 129, pp. C103-C103, 1982. (SCI, EI)

C. Y. Chang, Y. K. Fang, W. L. Lin, and W. C. Hsu, “The Mobility and Lifetime of Injected Holes and Electrons in A-Si-H Thin films,” J. Electrochem. Society, vol. 128, pp. C95-C95, 1981. (SCI, EI)

W. H. Chung, C. L. Yang, C. C. Yeh, B. Y. Chou, H. Y. Liu, H. S. Huang, T. T. Wu, W. C. Hsu, and C. S. Lee, “High-Temperature Characteristics of AlGaN/AlN/GaN MOS-HEMT by Using Ozone Water Oxidation Technique,” International Electron Devices and Materials Symposia (IEDMS) , Nantao, Taiwan, 28-29 Nov. 2013.

Y. N. Lai, W. F. Lai, E. P. Yao, W. C. Hsu, M. H. Cheng, and C. S. Ho, “White Emission Generated by Using Flexible Blue Organic Emitter Diodes Incorporating Color-Conversion Layers,” International Electron Devices and Materials Symposia (IEDMS) , Nantao, Taiwan, 28-29 Nov. 2013.

H. Y. Liu, W. C. Hsu, B. Y. Chou, C. S. Lee, Y. B. Liao, C. S. Ho, and Y. H. Wang, “Improved Thermal Stability and Thermal Model Analysis of AlGaN/GaN HEMT and MOS-HEMT Fabricated by Hydrogen Peroxide Oxidation Technique,” International Electron Devices and Materials Symposia (IEDMS) , Nantao, Taiwan, 28-29 Nov. 2013.

Y. B. Liao, M. H. Chiang, and W. C. Hsu, “Performance Benchmarking for Various Bulk FinFETs,” 2013 International Electron Devices and Materials Symposia (IEDMS), Nantao, Taiwan, 28-29 Nov. 2013.

B. Y. Chou, W. C. Hsu, H. Y. Liu, C. S. Lee, W. C. Ou, and Y. S. Wu, “Fabrication of Si3N4-Passivated T-Gate AlGaN/GaN HEMTs with Gate-Length Reduction by a Two-Step Gate Photolithography Process” 2013 IEEE Nanotechnology Materials and Devices Conference (NMDC), Tainan, Taiwan, 6-9 Oct. 2013. (oral)

E. P. Yao, Y. N. Lai, W. C. Hsu, K. H. Jou, “The Influence of Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] Films Treated by Low-Power Laser” 2013 IEEE Nanotechnology Materials and Devices Conference (NMDC), Tainan, Taiwan, 6-9 Oct. 2013.

B. Y. Chou, Y. S. Wu, E L. Huang, W. F. Chen, H. Y. Liu, W. C. Hsu, C. S. Lee, W. C. Ou, and C. S. Ho, “A Device Performance Study of Stacked Gate Dielectrics AlGaN/GaN MOS-HEMTs by Mixed Oxide Thin Film Growth Techniques,” International Conference on Solid State Devices and Materials (SSDM), Fukuoka, Japan, 24-27 Sep. 2013.

E L. Huang, W. F. Chen, W. C. Hsu, J. C. Chou, C. S. Ho, E. P. Yao, H. W. Liu, and Y. C. Kao, “Effects of Poly(3-hexylthiophene) Concentration on Performance of Extended-Gate Field-Effect Transistor for Silver Ion Detection,” International Conference on Solid State Devices and Materials (SSDM),Fukuoka, Japan, 24-27 Sep. 2013.

H. Y. Liu, W. C. Hsu, B. Y. Chou, C. S. Lee, C. F. Yang, C. S. Ho, E. L. Huang, and W. C. Ou, “A Cost-Effective Surface Passivation Technique on GaN-based Heterostructure Field-Effect Transistors and the Enhancement of RF Power Performances” International Conference on Advanced Complex Inorganic Nanomaterials (ACIN), Namur, Belgium, 15-19 Jul. 2013.

B. Y. Chou, W. C. Hsu, H. Y. Liu, C. S. Ho, C. S. Lee, and C. F. Yang, “The DC Characteristics of MOS-HEMTs with Al2O3/HfO2 Stacked Dielectrics by Using H2O2 Oxidation and Sputtering Techniques” International Conference on Advanced Complex Inorganic Nanomaterials (ACIN), Namur, Belgium, 15-19 Jul. 2013.

E. P. Yao, W. C. Hsu, H. W. Liu, Y. N Lai, C. S. Lee, C. S. Ho, C. W. Wang, and W. F. Lai, "The Influence of NPB-doped MEH-PPV Film on Performance of Polymer-based Light-emitting Diodes," International Electron Devices and Materials Symposia (IEDMS), I-Shou University, Taiwan, 28-29 Nov. 2012.

W. C. Hsu, H. Y. Liu, W. C. Ou, B. Y. Chou, C. S. Lee, and C. S. Ho, "Enhanced AlGaN/GaN MOS-HEMT Performance Using Aluminum Oxide for Surface Passivation and Gate Dielectric," International Electron Devices and Materials Symposia (IEDMS), I-Shou University, Taiwan, 28-29 Nov. 2012.

F. C. Liao, W. F. Lai, J. T. Hung, C. S. Ho, B. Y. Chou, H. Y. Liu, C. L. Yang, C. C. Yeh, W. C. Hsu, and C. S. Lee, "AlGaAs/InGaAs pHEMTs Passivated by Using Ozone Water Oxidation," International Electron Devices and Materials Symposia (IEDMS), I-Shou University, Taiwan, 28-29 Nov. 2012.

C. S. Ho, W. C. Hsu, Ying-Nan Lai, E-Ling Huang, En-Ping Yao, W. M. Chen, C. S. Lee, C. W. Wang “Influence of Absorption Property by Doping/inserting C545T in Polymer Solar Cell”, International Conference on Solid State Devices and Materials (SSDM), Sep 25-27, 2012, Kyoto International Conference Center, Japan

E. L. Huang, Y. C. Kao, W. C. Hsu, J. C. Chou, H. Y. Liu, C. S. Ho, B. Y. Chou, En-Ping Yao, and Y. N. Lai “Extended-gate field-effect transistor based on Poly(3-hexylthiophene) for selective silver ion sensor”, European Materials Research Society (E-MRS), Strasbourg, France, 14-18 May 2012.

H. Y. Liu, W. C. Hsu, B. Y. Chou, K. H. Lee, E. L. Huang, C. S. Lee, C. S. Ho, E. P. Yao, and C. M. Tsai, “Investigation to AlGaN/GaN High Electron Mobility Transistor Oxide-Passivated by Using Hydrogen Peroxide”, European Materials Research Society (E-MRS), Strasbourg, France, 14-18 May 2012.

H. Y. Liu, K. H. Lee, W. C. Hsu, B. Y. Chou, E. L. Huang, C. S. Lee, C. S. Ho, E. P. Yao, and C. M. Tsai, “A Novel Gate Dimension Shrinking Method by Nitric Acid Selective Etching in AlGaN/GaN High Electron Mobility Transistor”, European Materials Research Society (E-MRS), Strasbourg, France, 14-18 May 2012.

M. Y. Lin, L. Y. Tseng, Y. H. Liao, C. S. Ho, B. Y. Chou, H. Y. Liu, Y. N. Lai, E L. Huang, Y. B. Liao, E. P. Yao, F. C. Liao, W. F. Lai, W.-C. Hsu “ AlGaAs/InGaAs MOS-pHEMTs with Different Shifted -Gate Structure”, International Electron Devices and Materials Symposium (IEDMS), Nov 17-18, 2011, National Taiwan University of Science and Technology, Taipei, Taiwan.

M. H. Hsu, C. W. Wang, W. C. Hsu, T. K. Hsu, J. H. Wu “An optimal structural design for stackable piezoelectric power generation device using micropower energy storage method”, International Electron Devices and Materials Symposium (IEDMS), Nov 17-18, 2011, National Taiwan University of Science and Technology, Taipei, Taiwan.

C. Y. Ou, C. W. Wang, W. C. Hsu, H. Y. Tan “An optimal PWM dimming control design for LED lamp applications with stable power factor”, International Electron Devices and Materials Symposium (IEDMS), Nov 17-18, 2011, National Taiwan University of Science and Technology, Taipei, Taiwan.

W. C. Hsu, H. Y. Liu, B. Y. Chou, C. S. Lee, C. S. Ho, C. C. Hsu, J. K. Sheu, “Gate Length Shrinking by Hydrochloric Acid Selective Etching in Au/ITO Stack Gate High Electron Mobility Transistors”, International Electron Devices and Materials Symposium (IEDMS), Nov 17-18, 2011, National Taiwan University of Science and Technology, Taipei, Taiwan.

C. S. Ho, W. C. Hsu, Y. N. Lai, E. L. Huang, E. P. Yao, W. M. Chen, B. Y. Chou, H. Y. Liu, C. S. Lee, “The Enhancement in Light-absorption for Polymer Solar Cell by adding Fluorescent Dopant”, International Electron Devices and Materials Symposium (IEDMS), Nov 17-18, 2011, National Taiwan University of Science and Technology, Taipei, Taiwan.

Y.-B. Liao, M.-H. Chiang, W.-C. Hsu, and Y.-S. Lai, “Leakage Suppression Technique for Bulk FinFETs,” 2011 Symposium on Nano Device Technology (2011 SNDT), Hsinchu Taiwan.

Y.-B. Liao, W.-C. Hsu, M.-H. Chaing, H. Li, C.-L. Lin, and Y.-S. Lai, “Optimal device design of FinFETs on a bulk substrate,” 2011 IEEE International Conference on Nanoelectronics (2011 INEC), Chang Gung University, Tao-Yuan, Taiwan, pp. 1-2.

Y.-B. Liao, M.-H. Chiang, K. Kim, and W.-C. Hsu, “Variability study for silicon nanowire FETs,” 2011 Nanotechnology Conference and Expo, Boston, MA Hynes Convention Center USA , vol. 2, pp. 46-49.

Y.-B. Liao, M.-H. Chiang, W.-C. Hsu, Y.-S. Lai, and H. Li, “Stack Gate Technique for Feasible Bulk FinFETs,” 2011 International Conference on Solid State Devices and Materials, Aichi Industry and Labor Center, Nagoya, Japan, 2011, P-3-13.

E. P. Yao, W. C. Hsu, C. S. Ho, Y. Chang, E. L. Huang, C. S. Lee, S. J. Wu, and Y. S. Wang, “The Traps Study of Organic Light-Emitting Diode with Doped Hole Transporting Layer,” European Materials Research Society (E-MRS), Nice, France, 2011.

Y. Chang, W. C. Hsu, C. S. Ho, E. P. Yao, E. L. Huang, C. S. Lee, and S. J. Wu, “Study of Improved Efficiency by Anode Oxidation Technique in High Color Purity of Top-Emission White Organic Light Emitting Diode,” European Materials Research Society (E-MRS), Nice, France, 2011.

C. S. Ho, W. C. Hsu, C. S. Lee, C. C. Chen, E. P. Yao, and Y. Chang, “The Traps Study of Thermal-treated Fullerene by Charge-based Deep Level Transient Spectroscopy,” International Conference on Optics and Photonics in Taiwan(OPT10), Southern Taiwan University, Tainan, Taiwan, OPT-9-P-110, 2010.

C. S. Ho, W. C. Hsu, C. S. Lee, C. W. Wang, Y. Y. Tsai, Y. N. Lai, and W. F. Lai, “The Traps Study of Doped Hole Transporting Layer in Organic Light-Emitting Diode,” International Electron Devices and Materials Symposia (IEDMS), National Central University, Tao-Yuan, Taiwan, P-C-27, 2010.

W. C. Hsu, B. Y. Chou, C. S. Lee, C. S. Ho, Y. N. Lai, Y. C. Liu, H. Y. Liu, J. T. Hung, and M. Y. Lin, “Gate Length Shirking by H2O2 Treatment in AlGaN/GaN HEMTs, ” International Electron Devices and Materials Symposia (IEDMS), National Central University, Tao-Yuan, Taiwan, P-C-20, 2010.

C. S. Ho, E. L. Huang, W. C. Hsu, C. S. Lee, Y. N Lai, and W.H. Lai “Annealing Effects on Polymer Solar Cells with High Polythiophene- fullerene Concentrations,” 2010 International Conference on Solid State Devices and Materials (2010 SSDM), Tokyo Unversity, Japan, P-10-11, 2010.

C. S. Lee, B. Y. Chou, W. C. Hsu, S. Y. Chu, D. Y. Lin, C. S. Ho, Y. N. Lai, S. H. Yang, and W. T. Chien, “Optical Sensing Characteristics in a Transparent Al-Doped Zinc Oxide-Gated Al0.2Ga0.8As/In0.2Ga0.8As High Electron Mobility Transistor,” International Symposium on Photonics and Optoelectronics (SOPO 2010), Chengdu, China, 60243, 2010.

C. S. Ho, W. C. Hsu, K. H. Hsiao, Y. N. Lai, P. Y. Chou, A. Y. Kao, C. S. Lee, and C. Y. Lin, “Efficiency Improvement of Organic Solar Cell with Metal Anode by Using Wet Oxidation,” International Symposium on Photonics and Optoelectronics (SOPO 2010), Chengdu, China, 60300, 2010.

Y. N. Lai, W. C. Hsu, C. S. Lee, C. W. Wang, T. Y. Lu, C. S. Ho, and W. F. Lai, “High Efficiency Top emission Organic Light emitting Diode,” International Electron Devices and Materials Symposia (IEDMS), Chang-Gung University, Tao-Yuan, Taiwan, R.O.C., GD-01, 2009.

C. S. Ho, W. C. Hsu, C. S. Lee, K. H. Hsiao, Y. N. Lai, and W. H. Lai, “Efficiency Improvement of Organic Solar Cell with Metal Anode by O2 Plasma Modification,” International Electron Devices and Materials Symposia (IEDMS), Chang-Gung University, Tao-Yuan, Taiwan, R.O.C., GD-48, 2009.

A. Y. Kao, C. S. Lee, W. C. Hsu, B. Y. Chou, C. S. Ho, Y. N. Lai, P. C. Yang, S. H. Yang, and W. T. Chien, “Investigations on AlGaN/GaN High Electron Mobility Transistors,” International Electron Devices and Materials Symposia (IEDMS), Chang-Gung University, Tao-Yuan, Taiwan, R.O.C., GB-37, 2009.

Y. N. Lai, W. C. Hsu, C. S. Lee, C. W. Wang, T. Y. Lu, C. S. Ho, and W. F. Lai1, “High Efficiency Top-emission Organic Light-Emitting Diodes,” 2009 International Conference on Solid State Devices and Materials (2009 SSDM), Sendai, Japan, pp. 1180-1181, 2009.

C. S. Ho, W. C. Hsu, C. S. Lee, K. H. Hsiao, and W. H. Lai, “Single Donor-Acceptor Heterojunction Organic Photovoltaic Cell with an AgO-Based Anode,”2009 International Conference on Solid State Devices and Materials (2009 SSDM), Sendai, Japan, pp. 116-117, 2009.

A. Y. Kao, C. S. Ho, W. C. Hsu, Y. N. Lai, and C. S. Lee, “Improved Characteristics of InAlAs/InGaAs MOS-MHEMTs by Using Ozone Water Oxidation Method,” 2009 International Conference on Solid State Devices and Materials (2009 SSDM), Sendai, Japan, pp. 498-499, 2009.

B. Y. Chou, C. S. Lee, W. C. Hsu, S. Y. Chu, Y. N. Lai, C. S. Ho, Z. L. Tseng, and M. F. Shih, “ Transparent AZO-Gated Double δ-Doped AlGaAs/InGaAs HEMTs,” 2009 International Conference on Solid State Devices and Materials (2009 SSDM), Sendai, Japan, pp. 502-503, 2009.

C. S. Ho, C. S. Lee, Y. N. Lai, W. C. Hsu, B. I. Chou, A. Y. Kao, and Y. C. Liu, “Improved (NH4)2Sx-Passivated In0.2Ga0.8AsSb/GaAs Heterostructure Field-Effect Transistor,” International Electron Devices and Materials Symposia (IEDMS), National Chung-Hsing University, Taichung, Taiwan, R.O.C., B.352, 2008.

Y. N. Lai, W. C. Hsu, C. S. Lee, C. S. Ho, I. C. Chen, W. F. Lai, and W. H. Lai, “Enhanced Short-Circuit Current Density of Organic Solar Cells with the Donor-Acceptor Heterojunction,” International Electron Devices and Materials Symposia (IEDMS), National Chung-Hsing University, Taichung, Taiwan, R.O.C., E.390, 2008.

W. C. Hsu, Y. N. Lai, C. S. Lee, S. W. Yeh, W. F. Lai, and W. H. Lai, “Improved White Organic Light-Emitting Devices with Dual-Emission-Layer Design,”9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), D6.6, Beijing, China, 2008.

C. S. Lee, C. S. Ho, W. C. Hsu, K. H. Su, P. C. Yang, B. I. Chou, and A. Y. Kao, “Investigations on In0.2Ga0.8AsSb/GaAs High Electron Mobility Transistors with Gate Passivations,” 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), E1.11, Beijing, China, 2008.

Y. N. Lai, W. C. Hsu, S. W. Yeh, C. W. Wang, W. F. Lai, and W. H. Lai, “Enhancement of efficiency in white organic light-emitting diode by modifying emission layer,” 2008 Taiwan Display Conference, Taipei, Taiwan, R. O. C., 2008.

Y. N. Lai, W. C. Hsu, C. W. Wang, L. Tsou, W. F. Lai, W. H. Lai, “A high efficiency and color purity white organic light-emitting diode,” International Electron Devices and Materials Symposia (IEDMS), National Tsing-Hua University, Hsinchu, Taiwan, R. O. C., 2007.

T. B. Wang, W. C. Hsu, I. L. Chen , T. D. Lee, K. H. Su , P. D. Yang, and C. H. Chiou, “Single mode InGaAs photonic crystal vertical-cavity surface-emitting lasers emitting at 1170nm,” International Electron Devices and Materials Symposia (IEDMS), National Cheng-Kung University, Taiwan, R.O.C., p. 69, 2006.

J. R. Huang and W. C. Hsu, “Remarkable hydrogen-sensing characteristics of a Pd/GaN Schottky diode,” International Electron Devices and Materials Symposia (IEDMS), National Cheng-Kung University, Taiwan, R.O.C., p. 50, 2006.

W. C. Hsu, D. H. Huang, Y. S. Lin, J. C. Huang, and Y. K. Liao, “Thermal stability in metamorphic high-electron-mobility transistor with tensile-strained V-shaped channel,” International Electron Devices and Materials Symposia (IEDMS), National Cheng-Kung University, Taiwan, R.O.C., p. 40, 2006.

J. C. Huang, W. C. Hsu, C. S. Lee, D. H. Huang, and Y. C. Yang, “Power performance of In0.425Al0.575As/ In0.425Ga0.575As MHEMT with different drain current and drain voltage,” International Electron Devices and Materials Symposia (IEDMS), National Cheng-Kung University, Taiwan, R.O.C., p. 67, 2006.

C. S. Lee, W. C. Hsu, K. H. Su, J. C. Huang, C. C. Jien, and C. H. Liao, “Symmetrically-graded InAlAs/InxGa1-x/GaAs MHEMT with high-temperature sability,” International Electron Devices and Materials Symposia (IEDMS), National Cheng-Kung University, Taiwan, R.O.C., p. 64, 2006.

K. H. Su, W. C. Hsu, C. S. Lee, P. J. Hu, R. S. Hsiao, J. F. Chen, and T. W. Chi, “Highly-Stable Thermal Characteristics of a High Electron-Mobility Transistor with a Novel In0.3Ga0.7As0.99N0.01(Sb) Dilute Channel,” International Conference on Solid State Devices and Materials (SSDM), Yokoama, Japan, 2006.

K. H. Su, W. C. Hsu, Y. S. Lin, C. S. Lee, and C. L. Wu, “Improved Symmetric Doped-Channel Heterostructure Field-Effect Transistor,” 13th International Symposium on the Physics of Semiconductors and Applications, p. B1-05, Jeju, Korea, 2006.

W. C. Hsu, J. C. Huang, C. S. Lee, D. H. Huang, and M. F. Huang, “Temperature-Dependent Characteristics of d-Doped InAlAs/InxGa1-xAs/InP HEMTs with Different Channel Structures,” 13th International Symposium on the Physics of Semiconductors and Applications, p. P2-23, Jeju, Korea, 2006.

T. B. Wang, W. C. Hsu, R. T. Hsu, Y. H. Wu, and Y. S. Lin, “Annealing effect on the buffer layer of high-quality crystalline GaN,” 28th International Conference on the Physics of Semiconductors, Vienna, Austria, 2006.

I. L. Chen, I. C. Hsu, F. I. Lai, C. H. Chiou, H. C. Kuo, W. C. Hsu, G. Lin, H. D. Yang, and J. Y. Chi, “Single Mode InGaAs Photonic Crystal Vertical-Cavity Surface-Emitting Lasers”, CLEO/QELS and PhAST, 2006.

I. L. Chen, W. C. Hsu, H. C. Kuo, T. D. Lee and C. H. Chiou, “Low threshold current density long-wavelength, high strained InGaAs laser grown by MOCVD,” 3rd International Conference on Materials for Advanced Technologies (ICMAT), 2005.

Y. J. Chen, W. C. Hsu, T. B. Wang, C. H. Tseng, C. S. Lee, and H. H. Chen, “Gate-metal-related Kink Effect for Metamorphic High Electron Mobility Transistors (MHEMTs),” International Electron Devices and Materials Symposia (IEDMS), National Chiao-Tung University, Taiwan, R.O.C., p. 205, 2004.

Y. J. Chen, W. C. Hsu, C. S. Lee, J. C. Huang, H. H. Chen, C. H. Chen, and W. Y. Yang, “A δ-doped InAlAs/InGaAs Metamorphic HEMT with High-Temperature Thermal Stability,” International Electron Devices and Materials Symposia (IEDMS), National Chiao-Tung University, Taiwan, R.O.C., p. 517, 2004.

Y. J. Chen, T. B. Wang, K. H. Su, and W. C. Hsu, “In0.425Al0.575As/In0.65Ga0.35As metamorphic HEMT on GaAs,” the 5th International Vacuum Electron Sources Conference, Beijing, Chia, 372, 2004.

S. J. Yu, W. C. Hsu, Y. J. Li, and Y. J. Chen, “Investigation of step graded channel heterostructure field effect transistor with high gate voltage swing,” Fourth International Workshop on Junction Technology (IWJT-2004), Fudan University, Shanghai, China, pp. 210-212, 2004.

C. S. Lee, W. C. Hsu, Y. J. Chen, and J. C. Huang, “Analytic Modeling for Current-Voltage Characteristics and Drain-Induced Barrier-Lowering (DIBL) Phenomenon of the InGaP/InGaAs/GaAs PDCFET,” The 12th Seoul International Symposium on the Physics of Semiconductors and Applications-2004, Gyeongju, Korea, p. 46, 2004.

W. C. Hsu, Y. J. Chen, Y. W. Chen, Y. J. Li, T. B. Wang, and C. L. Wu, “The In0.45Al0.55As/In0.45Ga0.55As/In0.65Ga0.35As Composite Channel Metamorphic HEMT,” Electron Devices and Materials Symposia (EDMS 2003), National Taiwan Ocean University, Taiwan, R.O.C., pp. 265-268, 2003.

W. C. Hsu, J. C. Huang, and C. S. Lee, “Off-State Breakdown Modeling for High-Schottky-Barrier d-doped InGaP/InGaAs/InP High Electron Mobility Transistor,” Electron Devices and Materials Symposia (EDMS 2003), National Taiwan Ocean University, Taiwan, R.O.C., pp. 421-424, 2003.

C. S. Lee, W. C. Hsu, and J. C. Huang, “Analytic Modeling for Drain-Induced Barrier-Lowering (DIBL) Phenomenon of the InGaP/InGaAs/GaAs Pseudomorphic Doped-Channel Field-Effect Transistor,” Symposium on Nano Device Technology 2003 (SNDT 2003), pp. 226-229, 14-15 May, 2003.

C. S. Lee, W. C. Hsu, and Y. C. Chen, “Bias-tunable Multiple-Gm-Plateau Characteristics of an InGaAs/GaAs d-HEMT Usng a Graded Superlattice Spcaer,”Symposium on Nano Device Technology 2003 (SNDT 2003), pp. 234-237, 14-15 May, 2003.

Y. W. Chen and W. C. Hsu, “High Breakdown InGaP/InGaAs Tunneling Real Space Transfer HEMT,” 2002 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002), Sydney, Australia, 11-13 Dec., 2002.

Y. J. Li and W. C. Hsu, “Investigation of metamorphic high electron mobility transistor with an InxGa1-xAs graded channel,” International Electron Devices and Materials Symposia (IEDMS 2002), National Taiwan University, Taiwan, R.O.C., p. 778, 2002.

Y. W. Chen, W. C. Hsu, R. T. Hsu, and Y. H. Wu, “Fabrication of Low Dark Current InGaAs(P) PIN Photodiodes,” International Electron Devices and Materials Symposia (IEDMS 2002), National Taiwan University, Taiwan, R.O.C., p. 774, 2002.

Y. J. Li and W. C. Hsu, “Al0.2Ga0.8As/In0.22Ga0.78As Pseudomorphic DH-MODFET with GaAs/AlGaAs Superlattice Buffer Layer,” 26th International Conference on the Physics of Semiconductors, Edinburgh, Scotland, UK, 2002.

Y. W. Chen, W. C. Hsu, R. T. Hsu, and Y. H. Wu, “Investigation of Graded Base InGaP/GaAs HBT,” The Eighth Military Symposium on Fundamental Science, pp. C1-12~C1-15, 2001.

W. C. Hsu, “Improved Electron Mobility and Transconductance Range Using Graded Composition Channel,” Proceeding of Advanced Compound Semiconductor Materials and Devices, Chiba, Japan, pp.138, 2001.

Y. S. Lin, W. C. Hsu, and C. H. Wu, “High breakdown voltage In0.49Ga0.51P/In0.25Ga0.75As/GaAs HEMT brown by MOCVD,” 1999 Electron Devices and Materials Symposia, R. O. C., pp. 481-484, 1999.

Y. J. Li, H. M. Shieh, J. S. Su, M. J. Kao, and W. C. Hsu, “Improved Double Delta-Doped InGaAs/GaAs Field-Effect Transistors with Symmetric Graded Channel by MOCVD,” The Sixth Military Symposium on Fundamental Science, pp. 307-312, 1999.

Y. S. Lin, W. C. Hsu, J. S. Su, and W. Lin, “Al0.66In0.34As0.85Sb0.15/In0.75Ga0.25As/InP heterostructure field-effect transistors with high-breakdown voltage,”1998 International photonics conference, Taipei, Taiwan, R. O. C., pp. 614-616, 1998.

C. S. Lee, W. C. Hsu, H. M. Shieh, J. S. Su, S. Y. Jain and W. Lin, ”Dual-Mode InAlAsSb/InGaAs/InP Heterostructure Field-Effect Transistors,” International Electron Devices and Materials Symposia (EDMS), National Cheng Kung University, Taiwan, R.O.C., p. 90, 1998.

Y. S. Lin, W. C. Hsu, J. S. Su, J. Z. Huang, Y. H. Wu, S. D. Ho, and W. Lin, “An improved In0.5Ga0.5P/GaAs double heterostructure-emitter bipolar transistor grown by MOCVD,” The Fourth Military Symposium on Fundamental Science, pp. 305-314, 1997.

W. C. Hsu, Y. S. Lin, and J. S. Su, “High current gain In0.5Ga0.5P/GaAs heterostructure-emitter-bipolar transistor utilizing GaAs spacers,” in State-of-the-Art Program on Compound Semiconductors XXVI symposium, 191st ECS Meeting, Montreal, Canada, pp. 263-268, 1997.

S. Y. Lu, Y. S. Lin, C. L. Wu, and W. C. Hsu, “Electrical characteristics of In0.5Ga0.5P/GaAs heterostructure-emitter bipolar transistors using spacer layers,”The 13th Technological ＆ Vocational Education Conference of R. O. C., 1998.

Y. J. Li, Y. S. Lin, C. L. Wu, and W. C. Hsu, “Symmetric delta-doped InGaAs/GaAs field-effect transistors with graded heterointerface,” The 13thTechnological ＆ Vocational Education Conference of R. O. C., 1998.

J. S. Su, W. C. Hsu, Y. S. Lin, W. Lin, D. T. Lin, J. Z. Huang, and P. J. Chou, “Enhanced real-space transfer in d-doped GaAs/In0.1Ga0.9As/In0.25Ga0.75As two-step channel heterojunctions grown by LP-MOCVD,” 1996 International Electron Devices and Materials Symposia, Hsinchu, Taiwan, R. O. C., pp. 111-114, 1996.

J. S. Su, W. C. Hsu, Y. S. Lin, C. L. Wu, M. S. Tsai, and Y. H. Wu, “A novel InAlAs/InGaAs two-terminal real-space transfer diode,” 2nd Chinese Optoelectronics Workshop, Tainan, Taiwan, R. O. C., pp.83-88, 1995.

C. L. Wu, W. C. Hsu, M. S. Tsai, and H. M. Shieh, “Hot electron resonant tunneling in delta-modulation-doped GaAs/InGaAs field-effect transistors grown by MOCVD,” National Conference on Electronic Devices and Materials Symposium (EDMS), Kaohsiung, Taiwan, R. O. C., 1995.

T. Y. Lin, M. J. Kao, W. C. Hsu, Y. H. Wu, J. S. Su, and R. T. Hsu, “DC Characteristics of Triple-delta-doped GaAs Field-Effect Transistors,” National Electron Devices and Materials Symposium (EDMS), Kaoshiung, Taiwan, R.O.C., pp. 126-129, 1995.

J. S. Wang, R. T. Hsu, and W. C. Hsu, “Novel characteristics of p-type delta-doped GaAs field-effect transistors,” National Electron Devices and Materials Symposium (EDMS), Kaoshiung, Taiwan, R.O.C., pp. 130-133, 1995.

W. C. Hsu, H. M. Shieh, Y. H. Wu, R. T. Hsu, “Broad transconductance plateau region and high current GaAs/InGaAs pseudomorphic HEMT's utilizing a graded InxGa1-xAs channel,” Proc 23 Eur Solid State Dev Res Conf., p. 761, 1994.

Y. H. Wu, W. C. Hsu, and W. C. Liu, “A new In(0.53)Al(0.22)Ga(0.25)As /InP heterojunction bipolar transistor,” Proc. of ESSDERC'94, United Kingdom, 1994.

M. J. Kao, W. C. Hsu, and W. C. Liu, “High carrier density and mobility in GaAs/InGaAs/GaAs double delta-doped channel heterostructures,” Proc. 24th ESSDERC, United Kingdom, 1994.

T. S. Wu, W. C. Hsu, H. M. Shieh, C. L. Wu, and W. Lin, “Preparations of high two-dimensional electron gas concentration with enhanced mobility in GaAs/InGaAs pseudomorphic heterostructures,” 183rd Electrochemical Society Meeting, Honolulu, Hawaii, U. S. A., 1993.

Y. H. Wu, W. C. Hsu, and W. Lin, “Improved InGaAs/InP double- heterostructure- emitter bipolar transistors grown y MOCVD,” Proc. EDMS, Chung-Li, Taiwan, R. O. C., 1993.

W. C. Liu, W. C. Hsu, W. S. Lour, and H. M. Shieh, “A new n-GaAs/n-InGaAs doped-channel MIS like FET,” Proc SSDM, Chiba, Japan, 1993.

R. T. Hsu, M. J. Kao, W. C. Hsu, and W. Lin, “The Enhanced Mobility of a Highly Strained delta-doped In0.9Ga0.1P/In0.75Ga0.25As/In0.53Ga0.47As/InP High Electron Mobility Transistor,” International Conference on Eighteenth State-of-The-Art Program on Compound Semiconductors (SOTAPOCS XVIII), Honolulu, Hawaii, U. S. A., p. 364, 1993.

Y. H. Wu, W. C. Hsu, W. C. Liu, H. M. Shieh, and J. S. Su, “A new InGaAs/InP double-heterostructure-emitter bipolar transistor (DHEBt),” Electronic Devices and Material Symposium (EDMS’93), Chung-Li, Taiwan, R.O. C., p. 300, 1993.

H. M. Shieh, T. S. Wu, W. C. Hsu, R. T. Hsu, M. J. Kao, and C. L. Wu, “An NDR phenomenon in δ-doped GaAs/graded InxGa1-xAs/GaAs high electron mobility transistor,” International Conference on Electronic Devices and Materials Symposium (EDMS) , Taipei, Taiwan, R. O. C., 1992.

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