NCKU EE Faculty Data
Chinese Version
Chair Professor Shoou-Jinn Chang
Address
EE Building 12F R92C09
TEL
+886-6-2757575 ext.62391
Lab Weblink
3
(Rhttp://myweb.ncku.edu.tw/~changsj/dr.html /ext.92C23)
Background
Educations
1989
Ph.D., UCLA, U. S. A.
1985
M.S., SUNY, Stony Brook, U. S. A
1983
B.S., National Cheng Kung University, R. O. C.
Experiences
2016.2-now
Chair Professor, Dept. of Electrical Engineering, National Cheng-Kung University (NCKU)
2014.8-2016.2
Distinguished Professor, Dept. of Electrical Engineering, National Cheng-Kung University (NCKU)
2008.8-2011.7
Director, Institute of Microelectronics, NCKU
2008.8-2011.7
Deputy Director, Dept. of Electrical Engineering, NCKU
2004.7-2004.9
Visiting Scholar, Dept. Electrical Engineering and Bioscience, WASEDA University, Tokyo, Japan
2002.8-2002.9
Visiting Scholar, College of Applied Physics, University of Stuttgar, Germany
2002-
Honorary Professor, Changchun Institute of Optics and Fine Mechanics, China
2001.8-2001.9
Visiting Scholar, Institute for Microstructural Sciences, National Research Council, Canada
1999.7-2000.2
Visiting Scholar, Research Center for Advanced Science and Technology, University of Tokyo, Japan
1999.1-1999.3
Visiting Scholar, Department of Electrical and Electronics Engineering, University of Wales, Swansea, U.K.
1998-
Professor, Institute of Microelectronics , NCKU
1998-
Professor, Dept. of Electrical Engineering, NCKU
1997-
Chief of Semiconductor research center , NCKU
2001
Visiting scholar of Micro-structure graduate school ,National Research Council of Canada
1992-1998
Associate Professor, Dept. of Electrical Engineering, NCKU
1989-1992
Researcher, NTT Basic Research Laboratories Japan
Specialities
  • Semiconductor Physics
  • Optoelectronic device
Publication
Journal
more
less
  1. K. T. Lam, Y. H. Chen, T. J. Hsueh and S. J. Chang, "A 3-D ZnO-nanowire smart photo sensor prepared with through silicon via technology", IEEE Tran. Electron. Dev., Vol. 63, No. 9, pp. 3562-3566, September 2016.
  2. K. T. Lam, W. H. Lin, S. C. Shei, N. M. Lin, W. S. Chen and S. J. Chang, "White-light emission from GaN-based TJ LEDs coated with red phosphor", IEEE Electron. Dev. Lett., Vol. 37, No. 9, pp. 1150-1153, September 2016.
  3. C. J. Hsiao, M. T. H. Ha, C. Y. Hsu, Y. C. Lin, S. P. Chang, S. J. Chang and E. Y. Chang, "Growth of ultrathin GaSb layer on GaAs using metal–organic chemical vapor deposition with Sb interfacial treatment", Appl. Phys. Express, Vol. 9, No. 9, Art. No. 095502, September 2016.
  4. C. J. Wang, S. C. Shei and S. J. Chang, "Thermodynamics and kinetics insight into reaction mechanism of Cu2ZnSnSe4 nanoink based on binary metal-amine complexes in polyetheramine-synthesized process", J. Alloys and Compounds, Vol. 676, pp. 54-63, August 2016.
  5. S. H. Wang, S. J. Chang, H. Liu, T. Y. Tsai and C. L. Hsu, "Synthesis of In2O3 nanowires and their gas sensing properties", IEEE Sensors J., Vol. 16, No. 15, pp. 5850-5855, August 2016.
  6. J. Y. Li, S. P. Chang, M. H. Hsu, T. H. Kao and S. J. Chang, "Characterization of high Mg content MgZnO ultraviolet photodetectors with noise properties", ECS Solid-State Lett., Vol. 5, No. 7, pp. Q191-Q194, July 2016.
  7. S. W. Lan, M. H. Weng, R. Y. Yang, S. J. Chang, Y. S. Chung, T. C. Yu and C. S. Wu, "Preparation of a carbon doped tissue-mimicking material with high dielectric properties for microwave imaging application", Materials, Vol. 9, No. 7, Art. no. 559, July 2016.
  8. S. W. Lan, M. H. Weng, S. J. Chang and C. Y. Hung, "Design of wideband bandpass filter using mode-exciting technology", Microwave Optical Technol. Lett., Vol. 58, No. 6, pp. 1507-1510, June 2016.
  9. C. K. Wang, Y. Z. Chiou, P. K. Lin, J. S. Jheng, S. P. Chang and S. J. Chang, "Performance enhancement of blue InGaN light-emitting diodes with p-GaN/InGaN SPS last barrier and p-AlGaN/GaN SPS EBL", ECS J. Solid-State Sci. Technol., Vol. 5, No. 6, pp. Q179-Q182, June 2016.
  10. Y. H. Chen, S. J. Chang, C. J. Wu and T. J. Hsueh, "p-MOSFET and n-MOSFET prepared by ICP-assisted hot wire implantation doping technique", IEEE Electron. Dev. Lett., Vol. 37, No. 6, pp. 698-700, June 2016.
  11. S. W. Lan, M. H. Weng, C. Y. Hung and S. J. Chang, "Design of a compact ultra-wideband bandpass filter with an extremely broad stopband region", IEEE Microw. Wireless Compon. Lett., Vol. 26, No. 6, pp. 392-394, June 2016.
  12. W. K. Hsieh and S. J. Chang, "Bipolar resistive switching characteristics of TaO2 RRAM", Sci. Adv. Mater., Vol. 8, No. 5, pp. 1108-1111, May 2016.
  13. H. L. Lai, M. H. Weng, R. Y. Yang and S. J. Chang, "Enhanced photoluminescent properties and crystalline morphology of LiBaPO4:Tm3+ phosphor through microwave sintering method", Materials, Vol. 97, No. 5, Art. no. 356, May 2016.
  14. S. W. Wang, C. K. Wang, S. J. Chang, Y. Z. Chiou, K. W. Chiang, J. S. Jheng, and S. P. Chang, “Investigation of the effect of nitride-based LEDs fabricated using hole injection layer at different growth temperatures”, Jpn. J. Appl. Phys., Vol. 55, No. 5S, Art. no. 05FJ14, May 2016.
  15. Z. D. Lin, S. J. Young and S. J. Chang, "Improving FET properties of semiconducting single-walled carbon nanotubes by selective extraction", IEEE Tran. Electron. Dev., Vol. 63, No. 4, pp. 1749-1753, April 2016.
  16. H. Y. Chen, H. L. Lai, R. Y. Yang and S. J. Chang, "Effect of different alkali carbonate on the microstructure and photoluminescent properties of YInGe2O7:Eu3+ phosphors", J. Mater. Sci.: Mater. Electron., Vol. 27, No. 3, pp. 2963-2967, March 2016.
  17. M. R. Wu, J. R. C. Chien, C. J. Wu and S. J. Chang, "Near-infrared multichannel filter in a finite semiconductor metamaterial photonic crystal", IEEE Photon. J., Vol. 8, No. 1, Art. no. 2700309, February 2016.
  18. W. H. Lin, S. J. Chang and W. S. Chen, "GaN-based dual-color light-emitting diodes with a hybrid tunnel junction structure", IEEE/OSA J. Display Technol., Vol. 12, No. 2, pp. 165-170, February 2016.
  19. S. J. Chang, L. M. Chang, J. Y. Chen, C. S. Hsu, D. S. Kuo, C. F. Shen, W. S. Chen and T. K. Ko, "GaN-based light-emitting diodes prepared with shifted laser stealth dicing", IEEE/OSA J. Display Technol., Vol. 12, No. 2, pp. 195-199, February 2016.
  20. Z. D. Lin, S. J. Young and S. J. Chang, "Carbon nanotube thin films functionalized via loading of Au nanoclusters for flexible gas sensors devices", IEEE Tran. Electron. Dev., Vol. 63, No. 1, pp. 476-480, January 2016.
  21. C. M. Chen, S. J. Chang, J. C. Zheng, J. C. Liu and C. F. Yang, "Using folded open-loop ring resonator to design a common-mode suppression and frequency adjustable balun-bandpass filter", Appl. Computational Electromagnetics Soc. J., Vol. 31, No. 1, pp. 45-51, January 2016.
  22. T H. Kao, S. J. Chang, Y. K. Fang, P. C. Huang, B. C. Wang,C. Y. Wu and S. L. Wu, "Investigation of low-frequency noise of 28-nm technology process of high-k/metal gate p-MOSFETs with fluorine incorporation", Solid-State Electron., Vol. 115, pp. 7-11, January 2016.
  23. C. H. Lin, S. J. Chang, W. S. Chen and T. J. Hsueh, "Transparent ZnO-nanowire-based device for UV light detection and ethanol gas sensing on c-Si solar cell", RSC Advances, Vol. 6, pp. 11146-11150, 2016.
  24. Y. M. Juan, S. J. Chang, H. T. Hsueh, S. H. Wang, T. C. Chang, S. W. Huang, T. J. Hsueh, Y. M. Yeh and C. L. Hsu, "Electron field emitters made of 3-D CuO nanowires on flexible silicon substrate fabricated by heating Cu rods with through silicon via process", RSC Advances, Vol. 6, No. 53, pp. 47292-47297, 2016.
  25. S. W. Lan, M. H. Weng, S. J. Chang and C. Y. Hung, "A compact low-pass filter with ultrabroad stopband characteristics", Microwave Optical Technol. Lett., Vol. 57, No. 12, pp. 2800-2803, December 2015.
  26. Z. D. Lin, S. J. Young and S. J. Chang, "CO2 gas sensors based on carbon nanotube thin films using a simple transfer method on flexible substrate", IEEE Sensors Journal, Vol. 15, No. 12, pp. 7017-7020, December 2015.
  27. C. W. Liu, S. J. Chang, S. Brahma, C. H. Hsiao, F. M. Chang, P. H. Wang and K. Y. Lo, "Enhancement in the structure quality of ZnO nanorods by diluted Co dopants: Analyses via optical second harmonic generation", J. Appl. Phys., Vol. 117, No. 8, Art. No. 084315, February 2015.
  28. Y. H. Chen, S. J. Chang and T. J. Hsueh, "Si-based MOSFET and thin film transistor prepared via hot wire implantation doping technique", IEEE Electron. Dev. Lett., Vol. 36, No. 2, pp. 93-95, February 2015.
  29. J. L. Hou, C. H. Wu and S. J. Chang, "Electrochromic device integrated with GaInP/GaAs/Ge triple-junction solar cell", IEEE Electron. Dev. Lett., Vol. 36, No. 2, pp. 207-209, February 2015.
  30. P. Y. Lee, S. P. Chang, H. H. Lin and S. J. Chang, "Effect of rinsing temperature on electrical characteristics of ZnO TFTs built using successive ionic layer adsorption and reaction", J. Optoelectron. Adv. Mater., Vol. 17, No. 1-2, pp. 133-138, February 2015.
  31. S. W. Lan, M. H. Weng, S. J. Chang, C. Y. Hung and S. K. Liu "A tri-band bandpass filter with wide stopband using asymmetric stub-loaded resonators", IEEE Microw. Wireless Compon. Lett., Vol. 25, No. 1, pp. 19-21, January 2015.
  32. S. G. Li, K. T. Lam, W. C. Huang and S. J. Chang, "Effects of microcell layout on the performance of GaN-based high-voltage light-emitting diodes", J. Photon. Energy, Vol. 5, Art. No. 057605, January 2015.
  33. Q. P. Luan, K. T. Lam and S. J. Chang, "Effects of last barrier thickness on the hot–cold factor of GaN-based light-emitting diodes", J. Photon. Energy, Vol. 5, Art. No. 057602, January 2015.
  34. S. H. Wang, S. Liu, S. J. Chang, T. Y. Tsai and C. L. Hsu, "Enhanced field emission properties based on In–In2O3 composite nanopagodas", RSC Advances, Vol. 5, pp. 5192-5296, 2015.
  35. W. Zhang, B. L. Jackson, K. Sun, J. Y. Lee, S. J. Huang, H. C. Yu, S. P. Chang, S. J. Chang, and Y. H. Xie, "Scalability of phase change materials in nanostructure template", International J. Photoenergy, Vol. 2015, Art. no. 259296, 2015.
  36. K. T. Lam and S. J. Chang, "GaN-based LEDs with hot/cold factor improved by the electron blocking layer", IEEE/OSA J. Display Technol., Vol. 10, No. 12, pp. 1078-1082, December 2014.
  37. Y. H. Liu, S. J. Young, L. W. Ji and S. J. Chang, "Enhanced field emission properties of Ga-doped ZnO nanosheets by using an aqueous solution at room temperature", IEEE Tran. Electron. Dev., Vol. 61, No. 12, pp. 4192-4196, December 2014.
  38. C. W. Liu, S. J. Chang, Y. T. Ho, L. Chang, K. Y. Lo and S. Brahma, "Symmetrical dipole contribution from planar defects on m-plane ZnO epitaxial films", Current Nanosci., Vol. 10, No. 6, pp. 883-888, December 2014.
  39. S. J. Chang, T. H. Chang, W. Y. Weng, C. J. Chiu and S. P. Chang, "Amorphous InGaZnO ultraviolet phototransistors with a thin Ga2O3 layer", IEEE J. Sel. Top. Quan. Electron., Vol. 20, No. 6, Art. no. 3803605, Novembre/December 2014.
  40. C. W. Liu, S. J. Chang, C. H. Hsiao, K. Y. Lo, T. H. Kao, B. C. Wang, S. J. Yang, K. S. Tsai and S. L. Wu, "Noise properties of low-temperature-grown Co-doped ZnO nanorods as ultraviolet photodetectors", IEEE J. Sel. Top. Quan. Electron., Vol. 20, No. 6, Art. no. 3800707, Novembre/December 2014.
  41. C. L. Hsu and S. J. Chang, "Doped ZnO 1D nanostructures: synthesis, properties, and photodetector application", Small, Vol. 10, No. 22, pp. 4562-4585, November 2014.
  42. W. K. Hsieh, K. T. Lam and S. J. Chang, "Characteristics of tantalum-doped silicon oxide-based resistive random access memory", Mater. Sci. Semicond. Processing, Vol. 27, No. 1, pp. 293-296, November 2014.
  43. S. C. Shei, X. F. Zeng, N. M. Lin and S. J. Chang, "SiNx nanopillars on AlGaInP-based light-emitting diodes to enhance light extraction using self-assembly ZnO nanomask coating by successive ionic layer adsorption and reaction method", Thin Solid Films, Vol. 570, pp. 230-234, November 2014.
  44. C. M. Chen, S. J. Chang and C. F. Yang, "Fabrication of a novel diplexer using folded open-loop ring resonators and microstrip lines", Appl. Computational Electromagentics Society Journal, Vol. 29, No. 11, pp. 864-869, November 2014.
  45. M. R. Wu, C. J. Wu and S. J. Chang, "Investigation of defect modes in a defective photonic crystal with a semiconductor metamaterial defect", Physica E, Vol. 64, pp. 146-151, November 2014.
  46. M. R. Wu, C. J. Wu and S. J. Chang, "Near-infrared photonic band structure in a semiconductor metamaterial photonic crystal", Appl. Optics, Vol. 53, No. 31, pp. 7285-7289, November 2014.
  47. S. X. Chen, S. P. Chang and S. J. Chang, "Investigation of InN nanorod-based sensors fabricated on quartz substrate", Dig. J. Nanomater. Biostruct., Vol. 9, No. 4, pp. 1505-1511, October-December 2014.
  48. J. Y. Li, S. P. Chang, S. J. Chang, and T. Y. Tsai, "Sensitivity of EGFET pH sensors with TiO2 nanowires", ECS Solid-State Lett., Vol. 3, No. 10, pp. P123-P126, October 2014.
  49. T. H. Chang, C. J. Chiu, S. J. Chang, T. H. Yang, S. L. Wu and W. Y. Weng, "Low-frequency noise characterization of amorphous InGaZnO thin-film transistors with double-stack Ga2O3/SiO2 dielectric", ECS Solid-State Lett., Vol. 3, No. 10, pp. Q55-58, October 2014.
  50. Y. M. Juan, H. T. Hsueh, S. J. Chang, T. H. Chang, K. C. Lai, T. C. Cheng, Y. D. Lin, C. J. Chiu and W. Y. Weng, "Integration of a-IGZO thin-film transistor and crystalline-Si interdigitated back contact photovoltaic cell with 3D stacking structure as self-powered solar switch", IEEE Electron. Dev. Lett., Vol. 35, No. 10, pp. 1040-1042, October 2014.
  51. M. R. Wu, H. T. Hsu, C. J. Wu and S. J. Chang, "Frequency response of a ferroelectric material in double-negative region", IEEE Photon. J., Vol. 6, No. 5, Art. no. 2201711, October 2014.
  52. P. Y. Lee, S. P. Chang, E. H. Hsu and S. J. Chang, "Synthesis of CZTSe nanoink via a facile one-pot heating route based on polyetheramine chelation", Sol. Energy Mater. Sol. Cells, Vol. 128, pp. 156-165, September 2014.
  53. S. J. Chang, Y. L. Wu, W. Y. Weng, Y. H. Lin, W. K. Hsieh, J. K. Hsueh and C. L. Hsu, "Ga2O3 films for photoelectrochemical hydrogen generation", J. Electrochem. Soc., Vol. 161, No. 9, pp. H508-H511, September 2014.
  54. T. H. Kao, S. L. Wu, C. Y. Wu, Y. K. Fang, B. C. Wang, P. C. Huang, C. M. Lai, C. W. Hsu, Y. W. Chen, O. Cheng and S. J. Chang, "Impact of aluminum ion implantation on the low frequency noise characteristics of Hf-based high-k/metal gate pMOSFETs", IEEE Electron. Dev. Lett., Vol. 35, No. 9, pp. 954-956, September 2014.
  55. T. H. Meen, J. K. Tsai, Y. S. Tu, T. C. Wu, W. D. Hsu and S. J. Chang, "Optimization of the dye-sensitized solar cell performance by mechanical compression", Nanoscale Research Lett., Vol. 9, Art. no. 523, September 2014.
  56. C. K. Wang, Y. Z. Chiou, S. J. Chang, C. Y. Chang, T. H. Chiang, T. K. Lin and X. Q. Li, “On the effect of quantum barrier thickness in the active region of nitride-based light emitting diodes”, Solid-State Electron., Vol. 99, pp. 11-15, September 2014.
  57. T. H. Kao, S. J. Chang, Y. K. Fang, P. C. Huang, C. M. Lai, C. W. Hsu, Y. W. Chen, O. Cheng, C. Y. Wu and S. L. Wu, “Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis”, Appl. Phys. Lett., Vol. 105, No. 6, Art. no. 062109, August 2014.
  58. S. C. Tsai, S. L. Wu, P. C. Huang, B. C. Wang, K. S. Tsai, T. H. Kao, C. W. Yang, C. G. Chen, O. Cheng, Y. K. Fang, S. J. Chang and J. F. Chen, “Investigation of trap properties of Hf0.83Zr0.17O2 high-k gate stack p-type MOSFETs by low-frequency (1/f) noise and random telegraph noise analyses”, Jpn. J. Appl. Phys., Vol. 53, No. 8, Art. no. 08LB03, August 2014.
  59. C. J. Wang, S. C. Shei and S. J. Chang, "Novel solution process for synthesis of CIGS nanoparticles using polyetheramine as solvent", Optical Mater. Express, Vol. 4, No. 8, pp. 1593-1600, August 2014.
  60. S. J. Chang, C. I. Wu, and S. P. Chang, "See-through Si thin-film tandem solar cell module with hardener", IEEE J. Photovoltaics, Vol. 4, No. 4, pp. 1013-1017, July 2014.
  61. S. P. Chang, C. H. Wen and S. J. Chang, "Two-dimensional ZnO nanowalls for gas sensor and photoelectrochemical applications", Electron. Mater. Lett., Vol. 10, No. 4, pp. 693-697, July 2014.
  62. M. R. Wu, H. C. Hung, C. J. Wu and S. J. Chang, "Analysis of photonic bandgap structure for a polaritonic photonic crystal in negative-index region", J. Opt. Soc. Am. B, Vol. 31, No. 7, pp. 1730-1734, July 2014.
  63. M. H. Weng, S. J. Chang, W. Y. Chen, S. W. Lan, C. Y. Hung, Y. H. Su and H. Kuan, "A triband bandpass filter with low loss and high band selectivity using the split-end asymmetric stepped impedance resonators", Microwave Optical Technol. Lett., Vol. 56, No. 6, pp. 1427-1430, June 2014.
  64. M. H. Weng, W. Y. Chen, S. W. Lan, S. J. Chang, H. Kuan and Y. H. Su, "A high selectivity and wide stopband UWB bandpass filter using asymmetric SIRs with split-end", Microwave Optical Technol. Lett., Vol. 56, No. 6, pp. 1353-1356, June 2014.
  65. J. Y. Li, S. P. Chang, W. C. Hua and S. J. Chang, "Amorphous indium–zinc oxide semiconductor thin-film transistors", J. Nanoelectron. Optoelectron., Vol. 9, No. 3, pp. 388-391, June 2014.
  66. S. Y. Lin, S. J. Chang and T. J. Hsueh, "ZnO nanowires modified with Au nanoparticles for nonenzymatic amperometric sensing of glucose", Appl. Phys. Lett., Vol. 104, No. 19, Art. no. 193704, May 2014.
  67. Y. H. Liu, S. J. Young, L. W. Ji, T. H. Meen, C. H. Hsiao, C. S. Huang and S. J. Chang, "UV enhanced field emission performance of Mg-doped ZnO nanorods", IEEE Tran. Electron. Dev., Vol. 61, No. 5, pp. 1541-1545, May 2014.
  68. C. P. Liu, J. Y. Lin, Y. F. Liu and S. J. Chang, "Facile chemical method of etching polyimide films for failure analysis (FA) applications and its etching mechanism studies", Microelectron. Reliability, Vol. 54, No. 5, pp. 911-920, May 2014.
  69. C. J. Wang, S. C. Shei and S. J. Chang, "Novel solution process for synthesis of CIGS nanoparticles using polyetheramine as solvent", Mater. Lett., Vol. 122, pp. 52-54, May 2014.
  70. C. W. Liu, S. J. Chang, C. H. Hsiao, R. J. Huang, Y. S. Lin, M. C. Su, P. H. Wang and K. Y. Lo, "Probing surface structure quality of ZnO nanorods by second harmonic generation", IEEE Photon. Technol. Lett., Vol. 26, No. 8, pp. 789-792, April 2014.
  71. C. W. Li, S. P. Chang and S. J. Chang, "Electrical properties of amorphous zinc-indium-tin oxide semiconductor thin-film transistors", Nanoscience and Nanotechnol. Lett., Vol. 6, No. 4, pp. 273-278, April 2014.
  72. T. H. Kuo, S. L. Wu, K. S. Tsai, Y. K. Fang, C. M. Lai, C. W. Hsu, Y. W. Chen, O. Cheng and S. J. Chang, “Trap properties of high-k/metal gate pMOSFETs with aluminum ion implantation by random telegraph noise and 1/f noise measurements”, Jpn. J. Appl. Phys., Vol. 53, No. 4, Art. no. 04EC14, April 2014.
  73. Y. H. Liu, S. J. Young, C. H. Hsiao, L. W. Ji, T. H. Meen, W. Water and S. J. Chang, "Visible-blind photodetectors with Mg-doped ZnO nanorods", IEEE Photon. Technol. Lett., Vol. 26, No. 7, pp. 645-648, April 2014.
  74. W. K. Hsieh, K. T. Lam and S. J. Chang, "Asymmetric resistive switching characteristics of In2O3:SiO2 cosputtered thin film memories", J. Vac. Sci. Technol. B, Vol. 32, No. 2, Art. no. 020603, March/April 2014.
  75. C. C. Wong, S. P. Chang, H. F. Tu, C. H. Tseng, W. S. Chen and S. J. Chang, "Performance enhancement of high-current injected electrically programmable fuse with compressive-stress nitride layer", IEEE Electron. Dev. Lett., Vol. 35, No. 3, pp. 297-299, March 2014.
  76. Y. T. Chen, C. T. Lin, W. T. Chiang, M. S. Lin, C. W. Yang, J. C. Ke and S. J. Chang, "ALD TiN barrier metal for pMOS devices with a chemical oxide interfacial layer for 20-nm technology node", IEEE Electron. Dev. Lett., Vol. 35, No. 3, pp. 306-308, March 2014.
  77. S. J. Young, Y. H. Liu, C. H. Hsiao, S. J. Chang, B. C. Wang, T. H. Kao, K. S. Tsai and S. L. Wu, "ZnO-based ultraviolet photodetectors with novel nanosheet structures", IEEE Tran. Nanotechnol., Vol. 13, No. 2, pp. 238-244, March 2014.
  78. P. H. Chen, C. H. Kuo, W. C. Lai, Y. A. Chen, L. C. Chang and S. J. Chang, "GaN-based light-emitting diode with a p-InGaN layer", IEEE/OSA J. Display Technol., Vol. 10, No. 3, pp. 204-207, March 2014.
  79. C. P. Liu, C. A. Dai, C. Y. Chao and S. J. Chang, "Novel proton exchange membrane based on crosslinked poly(vinyl alcohol) for direct methanol fuel cells", J. Power Sources, Vol. 249, pp. 285-298, March 2014.
  80. C. T. Yu, W. C. Lai, C. H. Yen and S. J. Chang, "Effects of InGaN layer thickness of AlGaN/InGaN superlattice electron blocking layer on the overall efficiency and efficiency droops of GaN-based light emitting diodes", Optics Express, Vol. 22, No. S3, pp. A663-A670, March 2014.
  81. C. T. Yu, W. C. Lai, C. H. Yen, H. C. Hsu and S. J. Chang, "Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN", Optics Express, Vol. 22, No. S3, pp. A633-A641, March 2014.
  82. W. C. Lai, C. N. Lin, Y. C. Lai, P. C. Yu, G. C. Chi and S. J. Chang, "GaN-based light-emitting diodes with grapheme/indium tin oxide transparent layer", Optics Express, Vol. 22, No. S2, pp. A396-A401, March 2014.
  83. Y. M. Juan, H. T. Hsueh, T. C. Cheng, C. W. Wu and S. J. Chang, "Electron-field-emission enhancement of CuO nanowires by UV illumination", ECS Solid-State Lett., Vol. 3, No. 3, pp. P30-P32, March 2014.
  84. S. J. Chang and Y. Y. Lin, "GaN-based light-emitting diodes with staircase electron injector structure", IEEE/OSA J. Display Technol., Vol. 10, No. 2, pp. 162-166, February 2014.
  85. Y. L. Wu, Q. P. Luan, S. J. Chang, Z. Y. Jiao, W. Y. Weng, Y. H. Lin and C. L. Hsu, "Highly detective β-Ga2O3 nanowire isopropyl alcohol sensor", IEEE Sensors Journal, Vol. 14, No. 2, pp. 401-405, February 2014.
  86. P. J. Kuo. S. P. Chang and S. J. Chang, "Investigation of zinc-tin-oxide thin-film transistors with varying SnO2 contents", Electron. Mater. Lett., Vol. 10, No. 1, pp. 89-94, Jaunary 2014.
  87. L. M. Chang, S. J. Chang, D. S. Kuo, T. K. Ko, S. J. Hon and S. G. Li, "GaN-based LEDs with rough surface and selective KOH etching", IEEE/OSA J. Display Technol., Vol. 10, No. 1, pp. 27-32, Jaunary 2014.
  88. S. J. Chang, B. G. Duan, C. H. Hsiao, C. W. Liu and S. J. Young, "UV enhanced emission performance of low temperature grown Ga-doped ZnO nanorods", IEEE Photon. Technol. Lett., Vol. 26, No. 1, pp. 66-69, January 2014.
  89. S. H. Wang, T. Y. Tsai, S. J. Chang, W. Y. Weng, S. P. Chang and C. L. Hsu, "Enhanced field emission of TiO2 nanowires with UV illumination", IEEE Electron. Dev. Lett., Vol. 35, No. 1, pp. 123-125, January 2014.
  90. P. Y. Lee, S. P. Chang, E. H. Hsu and S. J. Chang, "The Cu concentration effect on the electro-optical properties of Cu2ZnSnSe4 thin films prepared by a non-vacuum solution-based nano-inks process", Sci. Adv. Mater., Vol. 6, No. 1, pp. 18-26, January 2014.
  91. S. B. Wang, R. S. Chen, S. J. Chang, H. C. Han, M. S. Wu, L. C. Chen and K. S. Chen, "Surface plasmon resonance-induced color-selective Au-peapodded silica nanowire photodetectors with high photoconductive gain", Nanoscale, Vol. 6, No. 3, pp. 1264-1270, 2014.
  92. J. L. Hou, S. J. Chang, T. J. Hsueh, C. H. Wu, W. Y. Weng and J. M. Shieh, "InGaP/GaAs/Ge triple-junction solar cells with ZnO nanowires", Progress in Photovoltaics, Vol. 21, No. 8, pp. 1645-1652, December 2013.
  93. C. H. Hsiao, C. S. Huang, S. J. Young, J. J. Guo, C. W. Liu and S. J. Chang, "Optical and structural properties of Ga-doped ZnO nanorods", J. Nanosci. Nanotechnol., Vol. 13, No. 12, pp. 8320-8324, December 2013.
  94. T. Y. Tsai, S. J. Chang, W. Y. Weng, S. Liu, C. L. Hsu, H. T. Hsueh and T. J. Hsueh, "β-Ga2O3 nanowires-based humidity sensors prepared on GaN/sapphire substrate", IEEE Sensors Journal, Vol. 13, No. 12, pp. 4891-4896, December 2013.
  95. S. J. Chang, B. G. Duan, C. W. Liu, C. H. Hsiao, S. J. Young and C. S. Huang, "UV enhanced indium-doped ZnO field emitter", IEEE Tran. Electron. Dev., Vol. 60, No. 11, pp. 3901-3906, November 2013.
  96. C. T. Yu, W. C. Lai, C. H. Yen and S. J. Chang, "InN/GaN alternative growth of thick InGaN wells on GaN-based light emitting diodes", Optical Mater. Express, Vol. 3, No. 11, pp. 1952-1959, November 2013.
  97. W. C. Lai, C. H. Yen, Y. Y. Yang, C. K. Wang and S. J. Chang, "GaN-based ultraviolet light-emitting diodes with ex-situ sputtered AlN nucleation layer", IEEE/OSA J. Display Technol., Vol. 9, No. 11, pp. 895-899, November 2013.
  98. S. J. Chang, L. Lu, Y. Y. Lin and S. G. Li, "GaN-based light-emitting diodes with strain compensation buffer layer", IEEE/OSA J. Display Technol., Vol. 9, No. 11, pp. 910-914, November 2013.
  99. Z. F. Zeng, S. C. Shei and S. J. Chang, "Improving light output power of AlGaInP-based LEDs using GaP nanorods prepared by silver method", ECS Solid-State Lett., Vol. 2, No. 11, pp. Q79-Q81, November 2013.
  100. P. Y. Lee, S. P. Chang and S. J. Chang, "Fabrication and photoelectrochemical behavior of n-type Cu2ZnSnSe4 thin-film electrodes prepared via non-vacuum nanoinks process", ECS J. Solid-State Sci. Technol., Vol. 2, No. 11, pp. Q220-Q223, November 2013.
  101. S. J. Chang, C. W. Liu, C. H. Hsiao, K. Y. Lo, S. J. Young, T. H. Kao, K. S. Tsai and S. L. Wu, "Noise properties of Fe-ZnO nanorod ultraviolet photodetectors", IEEE Photon. Technol. Lett., Vol. 25, No. 21, pp. 2089-2092, November 2013.
  102. S. J. Chang, B. G. Duan, C. H. Hsiao, S. J. Young, B. C. Wang, T. H. Kao, K. S. Tsai and S. L. Wu, "Low-frequency noise characteristics of In-doped ZnO ultraviolet photodetectors", IEEE Photon. Technol. Lett., Vol. 25, No. 21, pp. 2043-2046, November 2013.
  103. Z. D. Lin, S. J. Young, C. H. Hsiao and S. J. Chang, "Adsorption sensitivity of Ag-decorated carbon nanotubes toward gas-phase compounds", Sensors and Actuators B, Vol. 188, pp. 1230-1234, November 2013.
  104. W. C. Lai, C. H. Yen and S. J. Chang, "GaN-based green-light-emitting diodes with InN/GaN growth-switched InGaN wells ", Appl. Phys. Express, Vol. 6, No. 10, Art. No. 102101, October 2013.
  105. S. J. Chang, X. F. Zeng, S. C. Shei and S. G. Li, "AlGaInP-based LEDs with AuBe-diffused AZO/GaP current spreading layer", IEEE J. Quan. Electron., Vol. 49, No. 10, pp. 846-851, October 2013.
  106. P. Y. Lee, S. C. Shei and S. J. Chang, "Evolution pathways for the formation of nano-Cu2ZnSnSe4 absorber materials via elemental sources and isophorondiamine chelation", J. Alloys and Compounds, Vol. 574, pp. 27-32, October 2013.
  107. C. I. Wu, S. P. Chang and S. J. Chang, "Method for improving the stability of gen 5 silicon thin-film tandem solar cell", IEEE J. Photovoltaics, Vol. 3, No. 4, pp. 1140-1143, October 2013.
  108. S. C. Hung, Q. P. Luan, H. Y. Lin, S. G. Li and S. J. Chang, "Embedded-Ge source and drain in InGaAs/GaAs dual channel MESFET", Current Appl. Phys., Vol. 13, No. 8, pp. 1577-1580, October 2013.
  109. M. H. Wu, S. P. Chang, W. Y. Liao, M. T. Chu and S. J. Chang, "Efficiency of GaN/InGaN double-heterojunction photovoltaic cells under concentrated illumination", Surface and Coating Technol., Vol. 231, pp. 253-256, September 2013.
  110. Z. D. Huang, W. Y. Weng, S. J. Chang, Y. F. Hua, C. J. Chiu and T. Y. Tsai, "Ga2O3/GaN-based metal-semiconductor-metal photodetectors covered with Au nanoparticles", IEEE Photon. Technol. Lett., Vol. 25, No. 18, pp. 1809-1811, September 2013.
  111. H. T. Hsueh, W. Y. Weng, T. Y. Tsai and S. J. Chang, "Electron-field-emission properties of gallium compound by ammonification of Ga2O3 nanowires", IEEE Tran. Nanotechnol., Vol. 12, No. 5, pp. 692-695, September 2013.
  112. Z. D. Huang, W. Y. Weng, S. J. Chang, C. J. Chiu, T. J. Hsueh and S. L. Wu, "Ga2O3/AlGaN/GaN heterostructure ultraviolet three-band photodetector", IEEE Sensors Journal, Vol. 13, No. 9, pp. 3462-3467, September 2013.
  113. J. L. Hou, S. J. Chang, C. H. Wu and T. J. Hsueh, "Self-powered ZnO nanowire UV photodetector integrated with GaInP/GaAs/Ge solar cell", IEEE Electron. Dev. Lett., Vol. 34, No. 8, pp. 1023-1025, August 2013.
  114. Z. S. Hu, F. Y. Hung, K. J. Chen, S. J. Chang, W. K. Hsieh, T. Y. Liao and T. P. Chen, "Recovery of thermal-degraded ZnO photodetector by embedding nano silver oxide nanoparticles", Appl. Sur. Sci., Vol. 279, pp. 31-35, August 2013.
  115. W. C. Lai, C. H. Yen, J. Z. Li, Y. Y. Yang, H. E. Cheng, S. J. Chang and S. G. Li, "GaN-based light-emitting diodes on electrochemically etched n--GaN template", IEEE Photon. Technol. Lett., Vol. 25, No. 15, pp. 1531-1534, August 2013.
  116. S. J. Chang, J. L. Hou, T. J. Hsueh, K. T. Lam, S. G. Li, C. H. Liu and S. P. Chang, "Triple-junction GaInP/GaAs/Ge solar cells with an AZO transparent electrode and ZnO nanowires", IEEE J. Photovoltaics, Vol. 3, No. 3, pp. 991-996, July 2013.
  117. S. C. Tsai, S. L. Wu, B. C. Wang, S. J. Chang, C. H. Hsu, C. W. Yang, C. M. Lai, C. W. Hsu, O. Cheng, P. C. Huang and J. F. Chen, "Low-frequency noise characteristics for various ZrO2-added HfO2-based 28-nm high-k/metal-gate nMOSFETs", IEEE Electron. Dev. Lett., Vol. 34, No. 7, pp. 834-836, July 2013.
  118. P. Y. Lee, S. C. Shei, E. H. Hsu and S. J. Chang, "A novel synthesis of Cu2SnSe3 nanoink prepared via elemental sources and isophorondiamine chelation", Mater. Lett., Vol. 102, pp. 120-122, July 2013.
  119. P. Y. Lee, S. P. Chang and S. J. Chang, "Synthesis and optical properties of ZnO thin films prepared by SILAR method with ethylene glycol", Adv. Nano Research, Vol. 1, No. 2, pp. 93-103, July 2013.
  120. S. Y. Lin, S. J. Chang and T. J. Hsueh, "ZnO Nanowires modified with Au nanoparticles exhibiting high field-emission performance", ECS J. Solid-State Sci. Technol., Vol. 2, No. 7, pp. N149-N151, July 2013.
  121. C. W. Liu, S. J. Chang, C. H. Hsiao, C. C. Liu, R. J. Huang,Y. S. Lin, M. C. Su, P. H. Wang and K. Y. Lo, "Diluted magnetic nanosemiconductor: Fe-doped ZnO vertically aligned nanorod arrays grown by hydrothermal synthesis", IEEE Tran. Nanotechnol., Vol. 12, No. 4, pp. 649-655, July 2013.
  122. T. P. Chen, K. H. Lee, S. P. Chang, S. J. Chang and P. C. Chang, "Effect of surface modification by self-assembled monolayer on the ZnO film ultraviolet sensor", Appl. Phys. Lett., Vol. 103, Art. no. 022101, July 2013.
  123. T. H. Chang, C. J. Chiu, S. J. Chang, T. Y. Tsai, Z. D. Huang and W. Y. Weng, "Amorphous InGaZnO ultraviolet phototransistors with double-stack Ga2O3/SiO2 dielectric", Appl. Phys. Lett., Vol. 102, No. 22, Art. no. 221104, June 2013.
  124. C. M. Lee, S. P. Chang, S. J. Chang and C. I. Wu, "Fabrication of high-efficiency silicon solar cells by ion implant process", Int. J. Electrochem. Sci., vol. 8, pp. 7634-7645, June 2013
  125. Z. D. Lin, S. J. Young, C. H. Hsiao, S. J. Chang and C. S. Huang, "Improved field emission properties of Ag-decorated multi-walled carbon nanotubes", IEEE Photon. Technol. Lett., Vol. 25, No. 11, pp. 1017-1019, June 2013.
  126. C. H. Hsiao, C. S. Huang, S. J. Young, S. J. Chang, J. J. Guo. C. W. Liu and T. Y. Yang, "Field-emission and photoelectrical characteristics of Ga-ZnO nanorods photodetector", IEEE Tran. Electron. Dev., Vol. 60, No. 6, pp. 1905-1910, June 2013.
  127. T. P. Chen, S. J. Young, S. J. Chang, C. H. Hsiao, L. W. Ji, Y. J. Hsu and S. L. Wu, "Low-frequency noise characteristics of ZnO nanorod Schottky barrier photodetectors", IEEE Sensors Journal, Vol. 13, No. 6, pp. 2115-2119, June 2013.
  128. Y. L. Wu, S. J. Chang, W. Y. Weng, C. H. Liu, T. Y. Tsai, C. L. Hsu and K. C. Chen, "Ga2O3 nanowire photodetector prepared on SiO2/Si template", IEEE Sensors Journal, Vol. 13, No. 6, pp. 2368-2373, June 2013.
  129. Z. D. Lin, C. H. Hsiao, S. J. Young, C. S. Huang, S. J. Chang and S. B. Wang, "Carbon nanotubes with adsorbed Au for sensing gas", IEEE Sensors Journal, Vol. 13, No. 6, pp. 2423-2427, June 2013.
  130. S. P. Chang, T. H. Yang, C. J. Ho and S. J. Chang, "Effect of oxygen partial pressure on electrical characteristics of amorphous indium-gallium-zinc-oxide thin-film transistors", J. Nanoelectron. Optoelectron., Vol. 8, No. 4, pp. 361-365, June 2013.
  131. P. Y. Lee, S. C. Shei, E. H. Hsu, S. J. Chang and S. P. Chang, "Synthesis of Cu2ZnSnSe4 nanocrystals from metal sources using a facile process in isophorondiamine", Mater. Lett., Vol. 98, pp. 71-73, May 2013.
  132. Y. L. Wu, S. J. Chang, C. H. Liu, W. Y. Weng, T. Y. Tsai and C. L. Hsu, "UV enhanced field emission for β-Ga2O3 nanowires", IEEE Electron. Dev. Lett., Vol. 34, No. 5, pp. 701-703, May 2013.
  133. S. B. Wang, Y. F. Huang, S. Chattopadhyay, S. J. Chang, R. S. Chen, C. W. Chong, M. S. Hu, L. C. Chen and K. H. Chen, "Surface plasmon-enhanced gas sensing in single gold-peapodded silica nanowires", NPG Asian Mater., Vol. 5, e49; doi:10.1038/am, May 2013.
  134. H. M. Chang, Y. Y. Yang, W. C. Lai, S. G. Li, Y. R. Lin, Z. Y. Jiao and S. J. Chang, "GaN-based light-emitting diodes with step graded-refractive index (ZnO)x(SiO2)1-x micropillar array", IEEE/OSA J. Display Technol., Vol. 9, No. 5, pp. 353-358, May 2013.
  135. W. Zhang, P. C. Liu, B. Jackson, T. S. Sun, S. J. Huang, H. C. Hsu, Y. K. Su, S. J. Chang, L. Li, D. Li, L. Wang, X. D. Hu and Y. H. Xie, "Dislocation reduction through nucleation and growth selectivity of metal-organic chemical vapor deposition GaN", J. Appl. Phys., Vol. 113, No. 14, Art. no. 144908, April 2013.
  136. H. Y. Chen, R. Y. Yang and S. J. Chang, "Microstructure and photoluminescent properties of BaY2ZnO5:Tb3+ phosphors with addition of lithium carbonate", Mater. Sci. Eng. B, Vol. 178, No. 6, pp. 375-379, April 2013.
  137. Z. D. Huang, W. Y. Weng, S. J. Chang, Y. F. Hua, C. J. Chiu, T. J. Hsueh and S. L. Wu, "InGaN/GaN multiquantum well metal-semiconductor-metal photodetectors with belta-Ga2O3 layers", IEEE Sensors J., Vol. 13, No. 4, pp. 1187-1191, April 2013.
  138. S. J. Chang, Y. Y. Lin, C. H. Liu, S. G. Li, T. K. To and S. J. Hon, "Numerical simulation of GaN-based LEDs with chirped multiquantum barrier structure", IEEE J. Quan. Electron., Vol. 49, No. 4, pp. 436-442, April 2013.
  139. T. Y. Tsai, S. J. Chang, W. Y. Weng, S. G. Li, S. Liu, C. L. Hsu, H. T. Hsueh and T. J. Hsueh, "GaN nanowire field emitters with the adsorption of Au nanoparticles", IEEE Electron. Dev. Lett., Vol. 34, No. 4, pp. 553-555, April 2013.
  140. C. K. Wang, T. H. Chiang, K. Y. Chen, Y. Z. Chiou, T. K. Lin, S. P. Chang and S. J. Chang, "Investigating the effect of piezoelectric polarization on GaN-based LEDs with different quantum barrier thickness", IEEE/OSA J. Display Technol., Vol. 9, No. 4, pp. 207-212, April 2013.
  141. S. F. Yu, R. M. Lin, S. J. Chang, J. R. Chen, J. Y. Chu, C. T. Kuo and Z. Y. Jiao, "Improved carrier distributions by varying barrier thickness for InGaN/GaN LEDs", IEEE/OSA J. Display Technol., Vol. 9, No. 4, pp. 239-243, April 2013.
  142. H. M. Chang, W. C. Lai and S. J. Chang, "Effects of initial GaN growth mode on patterned sapphire on the opto-electrical characteristics of GaN-based light-emitting diodes", IEEE/OSA J. Display Technol., Vol. 9, No. 4, pp. 292-296, April 2013.
  143. K. H. Lee, P. C. Chang and S. J. Chang, "AlGaN/GaN high electron mobility transistors based on InGaN/GaN multi-quantum-well structures with photo-chemical vapor deposition of SiO2 dielectrics", Microelectron. Eng., Vol. 104, pp. 105-109, April 2013.
  144. J. L. Hou, S. J. Chang and S. P. Chang, "A ZnO nanowire photodetector with an Ir electrode integrated on a triple junction solar cell", Int. J. Electrochem. Sci., Vol. 8, No. 4, pp. 5650-5656, April 2013.
  145. T. P. Chen, F. Y. Hung, S. P. Chang, S. J. Chang, Z. S. Hu and K. J. Chen, "Optoelectronic properties of thermally evaporated ZnO films with nanowalls on glass substrates", Appl. Phys. Express, Vol. 6, No. 4, Art. no. 045201, April 2013.
  146. Y. T. Chen, S. I. Fu, C. T. Lin, W. T. Chiang, S. J. Chang, M. S. Lin and J. S. Jeng, "Effects of postdeposition annealing on a high-k-last/gate-last integration scheme for 20 nm nMOS and pMOS", J. Vac. Sci. Technol. B, Vol. 31, No. 2, Art. no. 020604, March/April 2013.
  147. T. P. Chen, S. P. Chang, F. Y. Hung, S. J. Chang, Z. S. Hu and K. J. Chen, "Simple fabrication process for 2D ZnO nanowalls and their potential application as a methane sensor", Sensors, Vol. 13, No. 3, pp. 3941-3950, March 2013.
  148. K. H. Lee, S. P. Chang, K. W. Liu, P. C. Chang, S. J. Chang, T. P. Chen, H. W. Shiu, L. Y. Chang and C. H. Chen, "Epitaxial growth of InN nanorods on nitridated chromium nanoislands under the In-rich regime", Int. J. Electrochem. Sci., Vol. 8, No. 3, pp. 3212-3228, March 2013.
  149. S. B. Wang, C. H. Hsiao, S. C. Hung, S. J. Chang, S. J. Young, B. C. Huang, S. L. Wu, B. R. Huang and H. C. Han, "One step fabrication of low noise CuO nanowire-bridge gas sensor", Int. J. Electrochem. Sci., Vol. 8, No. 3, pp. 3472-3482, March 2013.
  150. P. Y. Lee, S. P. Chang, P. J. Kuo, E. H. Hsu, S. J. Chang and S. C. Chang, "Sensing performance of EGFET pH sensors with CZTSe nanoparticles fabricated on glass substrates", Int. J. Electrochem. Sci., Vol. 8, No. 3, pp. 3866-3875, March 2013.
  151. J. L. Hou, S. J. Chang, M. C. Chen, C. H. Liu, T. J. Hsueh, J. K. Sheu and S. Li, "GaN-based planar p-i-n photodetectors with the Be-implanted isolation ring", IEEE Tran. Electron. Dev., Vol. 60, No. 3, pp. 1178-1182, March 2013.
  152. S. B. Wang, C. H. Hsiao, S. J. Chang, Y. Z. Jiao, S. J. Young, S. C. Hung and B. R. Huang, "ZnO branched nanowires and the p-CuO/n-ZnO heterojunction nanostructured photodetector", IEEE Tran. Nanotechnol., Vol. 12, No. 2, pp. 263-269, March 2013.
  153. K. H. Lee, P. C. Chang, T. P. Chen, S. P. Chang, H. W. Shiu, L. Y. Chang and S. J. Chang, "Synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy of n-ZnO:Al/p-GaN:Mg heterojunction", Appl. Phys. Lett., Vol. 102, No. 7, Art. no. 072104, February 2013.
  154. C. W. Liu, S. J. Chang, C. C. Liu, and K. Y. Lo, "Inspecting the surface of implanted Si(111) during annealing by reflective second harmonic generation: The influence of chamber pressure", Thin Solid Films, Vol. 529, pp. 282-286, February 2013.
  155. T. P. Chen, F. Y. Hung, S. P. Chang, S. J. Chang, S. L. Wu and Z. S. Hu, "Noise properties of ZnO nanowalls deposited using rapid thermal evaporation technology", IEEE Photon. Technol. Lett., Vol. 25, No. 3, pp. 213-216, February 2013.
  156. H. Y. Chen, R. Y. Yang and S. J. Chang, "Different alkali carbonates on the microstructure and photoluminescence properties of BaY2ZnO5:Tb3+ phosphors prepared using the solid-state method", J. Phys. Chem. Solid, Vol. 74, No. 2, pp. 344-347, February 2013
  157. B. C. Wang, S. L. Wu, Y. Y. Lu, S. J. Chang, J. F. Chen, S. C. Tsai, C. H. Hsu, C. W. Yang, C. G. Chen, O. Cheng and P. C. Huang, "Comparison of the trap behavior between ZrO2 and HfO2 gate stack nMOSFETs by 1/f noise and random telegraph noise", IEEE Electron. Dev. Lett., Vol. 34, No. 2, pp. 151-153, February 2013.
  158. C. K. Chang, S. Kataria, C. C. Kuo, A. Ganguly, B. Y. Wang, J. Y. Hwang, K. J. Huang, W. H. Yang, S. B. Wang, C. H. Chuang, M. Chen, C. I. Huang, W. F. Pong, K. J. Song, S. J. Chang, J. H. Guo, Y. Tai, M. Tsujimoto, S. Isoda, C. W. Chen, L. C. Chen and K. H. Chen, "Band gap engineering of chemical vapor deposited graphene by in situ BN doping", ACS Nano, Vol. 7, No. 2, pp. 1333-1341, February 2013.
  159. Z. S. Hu, F. Y. Hung, K. J. Chen, S. J. Chang, W. K. Hsieh and T. Y. Liao, "Improvement in thermal degradation of ZnO photodetector by embedding silver oxide nanoparticles", Functional Mater. Lett., Vol. 06, No. 1, Art. no. 1350001, February 2013.
  160. S. Y. Lin, S. J. Chang and T. J. Hsueh, "ZnO nanowires modified with Au nanoparticles exhibiting high field-emission performance", ECS J. Solid-State Sci. Technol., Vol. 2, No. 7, pp. N149-N151, January 2013.
  161. T. P. Chen, S. J. Young, S. J. Chang, C. H. Hsiao and S. L. Wu, "Photoelectrical and low-frequency noise characteristics of ZnO nanorod photodetectors prepared on flexible substrate", IEEE Tran. Electron. Dev., Vol. 60, No. 1, pp. 229-234, January 2013.
  162. C. Y. Chang, S. J. Chang, C. H. Liu, S. G. Li and E. Chen, "GaN-based LEDs with an HT-AlN nucleation layer prepared on patterned sapphire substrate", IEEE Photon. Technol. Lett., Vol. 25, No. 1, pp. 88-90, January 2013.
  163. X. F. Zeng, S. C. Shei, H. M. Lo and S. J. Chang, "Enhancement of output power for GaN-based LEDs by treatments of Ar plasma on p-GaN surface", J. Nanomater., Art. no. 813153, 2013.
  164. X. F. Zeng, S. C. Shei and S. J. Chang, "SiO2 nanopillars on microscale roughened surface of GaN-based light-emitting diodes by SILVER-based method", J. Nanomater., Art. no. 753230, 2013.
  165. C. I. Wu, S. J. Chang, K. T. Lam, S. G. Li and S. P. Chang, “Low cost amorphous silicon intrinsic layer for thin-film tandem solar cells”, International J. Photoenergy, Vol. 2013, Art. no. 183626, 2013
  166. C. M. Lee, S. P. Chang, S. J. Chang and C. I. Wu, “P-type quasi-mono silicon solar cell fabricated by ion implantation”, International J. Photoenergy, Vol. 2013, Art. no. 171390, 2013
  167. K. H. Lee, S. P. Chang, K. W. Liu, P. C. Chang, S. J. Chang, T. P. Chen, H. W. Shiu, L. Y. Chang and C. H. Chen, "Growth of InN nanorods on glass substrates by molecular beam heteroepitaxy", Sci. Adv. Mater., Vol. 5, pp. 873-880, 2013.
  168. N. M. Lin, S. C. Shei and S. J. Chang, "GaN-based light-emitting diodes with a thermally stable mirror structure underneath an insulating SiO2 layer", IET Optoelectron., Vol. 6, No. 6, pp. 277-281, December 2012.
  169. S. Li, D. S. Kuo, C. H. Liu, S. C. Hung and S. J. Chang, "Efficiency improvement of GaN-based light-emitting diodes by direct wet etching of indium-tin-oxide layer", IET Optoelectron., Vol. 6, No. 6, pp. 303-306, December 2012.
  170. T. H. Chang, C. J. Chiu, W. Y. Weng, S. J. Chang, T. Y. Tsai, and Z. D. Huang, "High responsivity of amorphous indium gallium zinc oxide phototransistor with Ta2O5 gate dielectric", Appl. Phys. Lett., Vol. 101, No. 26, Art. no. 261112, December 2012.
  171. C. M. Lee, S. P. Chang, S. J. Chang and C. I. Wu, "High-efficiency Si solar cell fabricated by ion implantation and inline backside rounding process", International J. Photoenergy, Vol. 2012, Art. no. 670981, 2012.
  172. F. Y. Hung, T. S. Lui, Z. S. Hu, S. J. Chang, L. H. Chen and K. J. Chen, "The effects of crystallization on mechanical mechanism and residual stress of sputtered Ag thin films", Mater. Trans., Vol. 53, No. 11, pp. 2049-2055, November 2012.
  173. S. J. Chang, T. Y. Tsai, Z. Y. Jiao, C. J. Chiu, W. Y. Weng, S. H. Wang, C. L. Hsu, T. J. Hsueh and S. L. Wu, "A TiO2 nanowire MIS photodetector with polymer insulator", IEEE Electron. Dev. Lett., Vol. 33, No. 11, pp. 1577-1579, November 2012.
  174. Z. D. Huang, R. W. Chuang, W. Y. Weng, S. J. Chang, C. J. Chiu, T. J. Hsueh and S. L. Wu, "GaN Schottky barrier photodetectors with a β-Ga2O3 cap layer", Appl. Phys. Express, Vol. 6, No. 11, Art. no. 116701, November 2012.
  175. T. Y. Tsai, S. J. Chang, T. J. Hsueh, C. L. Hsu, W. Y. Weng and J. M. Shieh, "A Si nanowire photovoltaic device prepared by selective electroless etching", IEEE Tran. Nanotechnol., Vol. 11, No. 6, pp. 1148-1150, November 2012.
  176. S. P. Chang, C. W. Li, K. J. Chen, S. J. Chang, C. L. Hsu, T. J. Hsueh and H. T. Hsueh, "ZnO-nanowire-based extended-gate field-effect-transistor pH sensors prepared on glass substrate", Sci. Adv. Mater., Vol. 4, No. 11, pp. 1174-1178, November 2012.
  177. C. Y. Chang, S. J. Chang, C. H. Liu, S. G. Li and T. K. Lin, "GaN-based LEDs with double strain releasing MQWs and Si delta-doping layers", IEEE Photon. Technol. Lett., Vol. 24, No. 20, pp. 1809-1811, October 2012.
  178. S. J. Chang, S. F. Yu, R. M. Lin, S. G. Li, T. H. Chiang, S. P. Chang and C. H. Chen, "InGaN-based light-emitting diodes with an AlGaN staircase electron blocking layer", IEEE Photon. Technol. Lett., Vol. 24, No. 19, pp. 1737-1740, October 2012.
  179. Y. Y. Lin, R. W. Chuang, S. J. Chang, S. G. Li, Z. Y. Jiao, T. K. Ko and C. H. Liu, "GaN-based LEDs with a chirped multiquantum barrier structure", IEEE Photon. Technol. Lett., Vol. 24, No. 18, pp. 1600-1602, September 2012.
  180. T. Y. Tsai, S. J. Chang, W. Y. Weng, S. H. Wang, C. J. Chiu, C. L. Hsu and T. J. Hsueh, "TiO2 nanowires UV photodetectors with Ir Schottky contacts", IEEE Photon. Technol. Lett., Vol. 24, No. 18, pp. 1584-1586, September 2012.
  181. H. F. Chiu, S. L. Wu, Y. S. Chang, S. J. Chang, J. F. Chen, S. C. Tsai, C. H. Hsu, C. M. Lai, C. W. Hsu and O. Cheng, "Impact of oxygen annealing on high-k gate stack defects characterized by random telegraph noise", Appl. Phys. Lett., Vol. 101, No. 12, Art. no. 122105, September 2012.
  182. T. P. Chen, S. J. Young, S. J. Chang, B. R. Huang, S. M. Wang, C. H. Hsiao, S, L. Wu and C. B. Yang, "Low-frequency noise characteristics of GaN Schottky barrier photodetectors prepared with nickel annealing", IEEE Sensors Journal, Vol. 12, No. 9, pp. 2824-2829, September 2012.
  183. M. H. Wu, S. P. Chang, S. J. Chang, R. H. Horng, W. Y. Liao, R. M. Lin, "Characteristics of GaN/InGaN double-heterostructure photovoltaic cells", International J. Photoenergy, Vol. 2012, Art. no. 206174, 2012.
  184. Z. S. Hu, F. Y. Hung, S. J. Chang, B. R. Huang, B. C. Lin, W. K. Hsieh and K. J. Chen, "Effect of Ag film thickness on the crystallization mechanism and photoluminescence properties of ZnO/Ag nanoflower arrays", Appl. Sur. Sci., Vol. 258, No. 20, pp. 8049-8054, August 2012.
  185. R. M. Lin, S. F. Yu, S. J. Chang, T. H. Chiang, S. P. Chang and C. H. Chen, "Inserting a p-InGaN layer before the p-AlGaN electron blocking layer suppresses efficiency droop in InGaN-based light-emitting diodes", Appl. Phys. Lett., Vol. 101, No. 8, Art. no. 081120, August 2012.
  186. N. M. Lin, S. C. Shei and S. J. Chang, "Investigation of Ni/Ag contact to p-GaN with an O2 plasma treatment and its application to GaN-based LEDs", Phys. Status Solidi A, Vol. 209, No. 8, pp. 1568-1574, August 2012.
  187. S. C. Shei, P. Y. Lee and S. J. Chang, "Effect of temperature on the deposition of ZnO thin films by successive ionic layer adsorption and reaction", Appl. Sur. Sci., Vol. 258, No. 20, pp. 8109-8116, August 2012.
  188. L. M. Chang, S. J. Chang, Z. Y. Jiao, C. F. Shen, T. K. Ko, S. J. Hon, Y. Z. Chiou and H. Y. Chiou, "Enhanced current spreading for GaN-based side-view LEDs by adding an metallic stripe across the long side of the chip", IEEE Photon. Technol. Lett., Vol. 24, No. 16, pp. 1412-1414, August 2012.
  189. Y. Shen, S. G. Li, D. S. Kuo, S. J. Chang, K. T. Lam and K. H. Wen, "GaN-based light-emitting diodes with embedded air void arrays", J. Vac. Sci. Technol. B, Vol. 30, No. 4, Art. no. 041207, July/August 2012
  190. B. C. Wang, S. L. Wu, C. W. Huang, Y. Y. Lu, S. J. Chang, Y. M. Lin, K. H. Lee and O. Cheng, "Correlation between random telegraph noise and 1/f noise parameters in 28-nm pMOSFETs with tip-shaped SiGe source/drain", IEEE Electron. Dev. Lett., Vol. 33, No. 7, pp. 928-930, July 2012.
  191. Y. T. Chen, S. I. Fu, W. T. Chiang, C. T. Lin, S. H. Tsai, S. W. Wang and S. J. Chang, "Chemical oxide interfacial layer for the high-k-last/gate-last integration scheme", IEEE Electron. Dev. Lett., Vol. 33, No. 7, pp. 946-948, July 2012.
  192. T. P. Chen, S. J. Young, S. J. Chang, C. H. Hsiao and Y. J. Hsu, "Bending effects of ZnO nanorods metal-semiconductor-metal photodetectors on flexible polyimide substrate", Nanoscale Research Lett., Vol. 7, Art. no. 214, July 2012.
  193. S. F. Yu, S. P. Chang, S. J. Chang, R. M. Lin, H. H. Wu and W. C. Hsu, "Characteristics of InGaN-based light-emitting diodes on patterned sapphire substrates with various pattern heights", J. Nanomater., Art. no. 346915, 2012.
  194. K. H. Lee, P. C. Chang, S. J. Chang and Y. K. Su, “AlGaN/GaN heterostructure field-effect transistors with multi-MgxNy/GaN buffer and photo-CVD SiO2 gate dielectric”, Solid-State Electron., Vol. 72, No. 12, pp. 1018-1020, June 2012.
  195. S. B. Wang, C. H. Hsiao, S. J. Chang, K. T. Lam, K. H. Wen, S. J. Young, S. C. Hung and B. R. Huang, "CuO nanowire-based humidity sensor", IEEE Sensors Journal, Vol. 12, No. 6, pp. 1884-1888, June 2012.
  196. S. B. Wang, M. S. Hu, S. J. Chang, C. W. Chong, H. C. Han, B. R. Huang, L. C. Chen and K. S. Chen, "Gold nanoparticle-modulated conductivity in gold peapodded silica nanowires", Nanoscale, Vol. 4, No. 12, pp. 3660-3664, 2012.
  197. C. J. Chiu, Z. W. Pei, S. P. Chang and S. J. Chang, "Influence of weight ratio of poly(4-vinylphenol) insulator on electronic properties of InGaZnO thin-film transistor", J. Nanomater., Art. no. 698123, 2012.
  198. K. H. Lee, P. C. Chang, S. J. Chang, Y. K. Su, S. L. Wu and M. Pilkuhn, “Comparison studies of InGaN epitaxy with trimethylgallium and triethylgallium for photosensors application”, Mater. Chem. Phys., Vol. 134, No. 2-3, pp. 899-904, June 2012.
  199. Z. S. Hu, F. Y. Hung, S. J. Chang, W. K. Hsieh and K. J. Chen, "Align Ag nanorods via oxidation reduction growth using RF-sputtering", J. Nanomater., Art. no. 345086, 2012.
  200. H. Y. Chen, R. Y. Yang, S. J. Chang and Y. K. Yang, "Microstructure and photoluminescent properties of Sr2SiO4:Eu3+ phosphors with various NH4Cl flux concentrations", Maters. Research Bulletin, Vol. 47, No. 6, pp. 1412-1416, June 2012.
  201. H. C. Hung, C. J. Wu, T. J. Yang and S. J. Chang, "Magnetooptical effects in wave properties for a semiconductor photonic crystal at near-infrared", IEEE Photon. J., Vol. 4, No. 3, pp. 903-911, June 2012.
  202. C. J. Chiu, S. P. Chang and S. J. Chang, "High-performance amorphous indium-gallium-zinc oxide thin-film transistors with polymer gate dielectric", Thin Solid Films, Vol. 520, No. 16, pp. 5455-5458, June 2012.
  203. T. Y. Tsai, C. L. Hsu, S. J. Chang, S. I. Chen, H. T. Hsueh and T. J. Hsueh, "Enhanced field electron emission from zinc-doped CuO nanowires", IEEE Electron. Dev. Lett., Vol. 33, No. 6, pp. 887-889, June 2012.
  204. C. J. Chiu, S. S. Shih, W. Y. Weng, S. J. Chang, Z. D. Huang and T. Y. Tsai, "Deep UV Ta2O5/zinc-indium-tin-oxide thin film photo-transistor", IEEE Photon. Technol. Lett., Vol. 24, No. 12, pp. 1018-1020, June 2012.
  205. C. L. Tsai, C. T. Yen, Y. L. Chou, S. J. Chang and M. C. Wu, "1.3 μm InGaAsP planar buried heterostructure laser diodes with AllnAs electron stopper layer", Optics and Laser Technol., Vol. 44, No. 4, pp. 1026-1030, June 2012.
  206. H. T. Hsueh, T. J. Hsueh, S. J. Chang, F. Y. Hung, C. L. Hsu, B. T. Dai, K. T. Lam and K. H. Wen, "A flexible ZnO nanowire-based humidity sensor", IEEE Tran. Nanotechnol., Vol. 11, No. 3, pp. 520-525, May 2012.
  207. T. P. Chen, S. J. Young, S. J. Chang, C. H. Hsiao and C. S. Huang, "Field-emission and photoelectrical characteristics of ZnO nanorods photodetectors prepared on flexible substrate", J. Electrochem. Soc., Vol. 159, No. 5, pp. J153-J157, May 2012.
  208. K. W. Liu, S. J. Young, S. J. Chang, T. H. Hsueh, Y. Z. Chen, K. J. Chen, H. Hung, S. M. Wang and Y. L. Wu, "Growth of InN nanorods prepared by plasma-assisted molecular beam epitaxy with varying Cr thicknesses", J. Crystal Growth, Vol. 347, No. 1, pp. 113-118, May 2012.
  209. H. C. Hung, C. J. Wu, T. J. Yang, S. J. Chang, "Enhancement of near-infrared photonic band gap in a doped semiconductor photonic crystal", Progress in Electronmagntics Res (PIERS)., Vol. 125, pp. 219-235, 2012.
  210. W. Y. Chen, M. H. Weng, S. J. Chang, H. Kuan and Y. H. Su, "A new tri-band bandpass filter for GSM, WIMAX and ultra-wideband responses by using asymmetric stepped impedance resonators", Prog. in Electromagn. Res. (PIER), Vol. 124, pp. 365-381, 2012.
  211. T. H. Chiang, Y. Z. Chiou, S. J. Chang, C. K. Wang, T. K. Ko, T. K. Lin, C. J. Chiu and S. P. Chang, "Effect of varied undoped GaN thickness on ESD and optical properties of GaN-based LEDs", IEEE Photon. Technol. Lett., Vol. 24, No. 10, pp. 800-802, May 2012.
  212. N. M. Lin, S. C. Shei, S. J. Chang and X. F. Zeng, "GaN-based LEDs with omnidirectional metal underneath an insulating SiO2 layer", IEEE Photon. Technol. Lett., Vol. 24, No. 10, pp. 815-817, May 2012.
  213. K. J. Chen, F. Y. Hung, T. S. Lui, S. J. Chang and Z. S. Hu, "The low-temperature crystallization and interface characteristics of ZnInSnO/In films using a bias-crystallization mechanism", J. Nanomater., Art. no. 272387, 2012.
  214. T. Y. Tsai, S. J. Chang, W. Y. Weng, C. L. Hsu, S. H. Wang, C. J. Chiu, T. J. Hsueh and S. P. Chang, "A visible-blind TiO2 nanowire photodetector", J. Electrochem. Soc., Vol. 159, No. 4, pp. J132-J135, April 2012.
  215. T. P. Chen, S. J. Young, S. J. Chang, S. M. Wang, C. H. Hsiao, B. R. Huang and C. B. Yang, "Effect of nickel annealing on GaN-based photodetectors", Electrochem. Solid State Lett., Vol. 15, No. 4, pp. H111-H114, April 2012.
  216. W. Y. Chen, M. H. Weng and S. J. Chang, "A new tri-band bandpass filter based on stub-loaded step-impedance resonator", IEEE Microwave and Wireless Component Lett., Vol. 22, No. 4, pp. 179-181, April 2012.
  217. Y. T. Chen, F. Y. Hung, S. J. Chang, T. S. Lui and L. H. Chen, "Microstructural characteristics of InGaZnO thin film using an electrical current method", Mater. Trans., Vol. 53, No. 10, pp. 733-738, April 2012.
  218. K. H. Lee, P. C. Chang, S. J. Chang and Y. C. Yin, “AlGaN/GaN MOS-HFETs based on InGaN/GaN MQW structures with Ta2O5 dielectric”, European Phys. J. Appl. Phys., Vol. 57, No. 3, Art. no. 30102, March 2012.
  219. Y. T. Chen, F. Y. Hung, S. J. Chang, T. S. Lui and T. Y. Liao, "Characteristics of thin-film-transistors based on Zn-In-Sn-O thin films prepared by co-sputtering system", Mater. Tran., Vol. 53, No. 3, pp. 571-574, March 2012.
  220. K. H. Lee, P. C. Chang, S. J. Chang and S. L. Wu, “GaN-based Schottky barrier ultraviolet photodetector with a 5-pair AlGaN-GaN intermediate layer”, Phys. Status Solidi A, Vol. 209, No. 3, pp. 579-584, March 2012.
  221. R. Y. Yang, H. Y. Chen, S. J. Chang and Y. K. Yang, "Effect of Eu3+ concentration on microstructure and photoluminescence of Sr2SiO4:Eu3+ phosphors prepared by microwave assisted sintering", J. Luminescesnce, Vol. 132, No. 3, pp. 780-783, March 2012.
  222. H. C. Hung, C. J. Wu and S. J. Chang, "Infrared tunable multichannel filter in a doped semiconductor-dielectric photonic crystal heterostructure", IEEE J. Quan. Electron., Vol. 48, No. 3, pp. 361-366, March 2012.
  223. C. H. Yen, W. C. Lai, Y. Y. Yang, C. K. Wang, T. K. Ko, S. J. Hon and S. J. Chang, "GaN-based light-emitting diode with sputtered AlN nucleation layer", IEEE Photon. Technol. Lett., Vol. 24, No. 4, pp. 294-296, February 2012.
  224. S. J. Chang, D. S. Kuo, K. T. Lam, K. H. Wen, T. K. Ko and S. J. Hon, "GaN-based LEDs with sapphire debris removed by phosphoric etching", IEEE Tran. Components Packaging and Manufacturing Technol., Vol. 2, No. 2, pp. 349-353, February 2012.
  225. S. F. Yu, R. M. Lin, S. J. Chang and F. C. Chu, "Efficiency droop characteristics in InGaN-based near ultraviolet-to-blue light-emitting diodes", Appl. Phys. Express, Vol. 5, No. 2, Art. no. 022102, February 2012.
  226. D. S. Kuo, K. T. Lam, K. H. Wen, S. J. Chang, T. K. Ko and S. J. Hon, "GaN-based LEDs with Ar plasma treatment", Mater. Sci. Semicond. Processing, Vol. 15, No. 1, pp. 52-55, February 2012.
  227. H. C. Hung, C. J. Wu, T. J. Yang and S. J. Chang, "Tunable multichannel filter in a photonic crystal containing semiconductor photonic quantum well", IEEE Photon. J., Vol. 4, No. 1, pp. 283-290, February 2012.
  228. H. Y. Chen, M. H. Weng, S. J. Chang and R. Y. Yang, "Preparation of Sr2SiO4:Eu3+ phosphors by microwave-assisted sintering and their luminescent properties", Ceramics International, Vol. 38, No. 1, pp. 125-130, January 2012.
  229. H. T. Hsueh, S. J. Chang, W. Y. Weng, C. L. Hsu, T. J. Hsueh, F. Y. Hung, S. L. Wu and B. T. Dai, "Fabrication and characterization of coaxial p-copper oxide/n-ZnO nanowire photodetectors", IEEE Tran. Nanotechnol., Vol. 11, No. 1, pp. 127-133, January 2012.
  230. K. W. Liu, S. J. Young, S. J. Chang, T. H. Hsueh, H. Hung, S. X. Chen and Y. Z. Chen, "Growth of gallium nitride on silicon by molecular beam epitaxy incorporating a chromium nitride interlayer", J. Alloys and Compounds, Vol. 511, No. 1, pp. 1-4, January 2012.
  231. H. T. Hsueh, S. J. Chang, F. Y. Hung, W. Y. Weng, S. P. Chang, T. J. Hsueh, C. L. Hsu and B. T. Dai, "Isopropyl alcohol sensors of CuO nanotubes by thermal oxidation of copper films on glass", IEEE Sensors Journal, Vol. 11, No. 12, pp. 3276-3282, December 2011.
  232. X. F. Zeng, S. C. Shei and S. J. Chang, "GaN-based LEDs with nano-patterns by contact-transferred and mask-embedded lithography and Cl2/N2 plasma etching", ECS Solid-State Lett., Vol. 1, No. 6, pp. R27-R30, December 2012.
  233. T. P. Chen, S. J. Young, S. J. Chang and C. H. Hsiao, "Photoconductive gain of vertical ZnO nanorods on flexible polyimide substrate by low-temperature process", IEEE Sensors Journal, Vol. 11, No. 12, pp. 3457-3461, December 2011.
  234. H. C. Hung, C. J. Wu and S. J. Chang, "Terahertz temperature-dependent defect mode in a semiconductor-dielectric photonic crystal", J. Appl. Phys., Vol. 110, No. 9, Art. no. 093110, November 2011.
  235. W. Y. Chen, S. J. Chang, M. H. Weng and C. Y. Hung, "Design of fractal-based CMOS bandpass filter for Wireless HD system", Microelectron. Journal, Vol. 42, No. 11, pp. 1252-1256, November 2011.
  236. K. J. Chen, F. Y. Hung, S. J. Chang, J. D. Liao, C. C. Wang and Z. S. Hu, "The influences of plasma ion bombarded on crystallization, electrical and mechanical properties of Zn-In-Sn-O films", Appl. Sur. Sci., Vol. 258, No. 3, pp. 1157-1163, November 2011.
  237. H. C. Hung, C. J. Wu and S. J. Chang, "A mid-infrared tunable filter in a semiconductor-dielectric photonic crystal containing doped semiconductor defect", Solid State Communications, Vol. 151, No. 22, pp. 1677-1680, November 2011.
  238. H. T. Hsueh, T. J. Hsueh, S. J. Chang, F. Y. Hung, W. Y. Weng, C. L. Hsu and B. T. Dai, "Si nanowire-based humidity sensors prepared on glass substrate", IEEE Sensors Journal, Vol. 11, No. 11, pp. 3036-3041, November 2011.
  239. C. J. Chiu, W. Y. Weng, S. J. Chang, S. P. Chang and T. H. Chang, "A deep UV sensitive Ta2O5/a-IGZO TFT", IEEE Sensors Journal, Vol. 11, No. 11, pp. 2902-2905, November 2011.
  240. Z. D. Huang, W. Y. Weng, S. J. Chang, S. C. Hung, C. J. Chiu, T. J. Hsueh, W. C. Lai and S. L. Wu, "GaN Schottky barrier photodetectors with a lattice matched Al0.82In0.18N intermediate layer", IEEE Sensors Journal, Vol. 11, No. 11, pp. 2895-2901, November 2011.
  241. S. B. Wang, C. H. Hsiao, S. J. Chang, K. T. Lam, K. H. Wen, S. C. Hung, S. J. Young and B. R. Huang, "A CuO nanowire infrared photodetector", Sensors and Actuators A, Vol. 171, No. 2, pp. 207-211, November 2011
  242. Z. S. Hu, F. Y. Hung, S. J. Chang, K. J. Chen, Y. W. Tseng, B. R. Huang, B. C. Lin, W. Y. Chou and J. Chang, "Improvement of n-ZnO/p-Si photodiodes by embedding of silver nanoparticles", J. Nanoparticle Research, Vol. 13, No. 10, pp. 4757-4763, October 2011.
  243. C. W. Pao, C. T. Wu, H. M. Tsai, Y. S. Liu, C. L. Chang, W. F. Pong, J. W. Chiou, C. W. Chen, M. S. Hu, M. W. Chu, L. C. Chen, C. H. Chen, K. H. Chen, S. B. Wang, S. J. Chang, M. H. Tsai, H. J. Lin, J. F. Lee amd J. H. Guo, "Photoconduction and the electronic structure of silica nanowires embedded with gold nanoparticles", Phys. Review B, Vol. 84, No. 16, Art. no. 165412, October 2011.
  244. T. Y. Tsai, S. J. Chang, T. J. Hsueh, H. T. Hsueh, W. Y. Weng, C. L. Hsu and B. T. Dai, "p-Cu2O-shell/n-TiO2-nanowire-core heterostucture photodiodes", Nanoscale Research Lett., Vol. 6, Art. no. 575, October 2011.
  245. Y. H. Su, Y. K. Wu, S. L. Tu and S. J. Chang, "Electrostatic studies of π-π interaction for benzene stacking on a graphene layer", Appl. Phys. Lett., Vol. 99, No. 16, Art. no. 163102, October 2011
  246. K. H. Lee, P. C. Chang and S. J. Chang, “AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer”, Appl. Phys. Lett., Vol. 99, No. 15, Art. no. 153505, October 2011.
  247. K. H. Lee, P. C. Chang, S. J. Chang and S. L. Wu, “InGaN metal-semiconductor-metal photodetectors with triethylgallium precursor and unactivated Mg-doped GaN cap layers”, J. Appl. Phys., Vol. 110, No. 8, Art. no. 083113, October 2011.
  248. C. J. Chiu, W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang and H. T. Hsueh, "Ta2O5 solar-blind photodetectors", IEEE Sensors Journal, Vol. 11, No. 10, pp. 2372-2373, October 2011.
  249. K. W. Liu, S. J. Chang, S. J. Young, T. H. Hsueh, H. Hung, Y. C. Mai, S. M. Wang and Y. Z. Chen, "Improvement of (11-22) GaN on m-plane sapphire with CrN interlayer by using molecular beam epitaxy", J. Electrochem. Soc., Vol. 158, No. 10, pp. H983-H987, October 2011.
  250. C. J. Chiu, Z. W. Pei, S. T. Chang, S. P. Chang and S. J. Chang, "Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing", Vacuum, Vol. 86, No. 3, pp. 246-249, October 2011.
  251. N. M. Lin, S. J. Chang, S. C. Shei, W. C. Lai, Y. Y. Yang, W. C. Lin and H. M. Lo, "GaN-based LEDs with air voids prepared by one-step MOCVD growth", IEEE/OSA J. Lightwave Technol., Vol. 29, No. 18, pp. 2831-2835, September 2011.
  252. W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang and S. C. Hung, "Growth of Ga2O3 nanowires and the fabrication of solar-blind photodetector", IEEE Tran. Nanotechnol., Vol. 10, No. 5, pp. 1047-1052, September 2011.
  253. Y. T. Huang, S. L. Wu, S. J. Chang, C. W. Kuo, Y. T. Chen. Y. C. Cheng and O. Cheng, "Origin of stress memorization mechanism in strained-Si nMOSFETs using a low-cost stress-memorization technique", IEEE Tran. Nanotechnol., Vol. 10, No. 5, pp. 1053-1056, September 2011.
  254. H. T. Hsueh, T. J. Hsueh, S. J. Chang, T. Y. Tsai, F. Y. Hung, S. P. Chang, W. Y. Weng and B. T. Dai, "CuO-nanowire field emitter prepared on glass substrate", IEEE Tran. Nanotechnol., Vol. 10, No. 5, pp. 1161-1165, September 2011.
  255. W. H. Lin, C. J. Wu and S. J. Chang, "Effects of loss on the transmission and reflection in the single-negative materials", Appl. Phys. A, Vol. 104, No. 3, pp. 807-809, September 2011.
  256. K. J. Chen, F. Y. Hung, S. J. Chang, S. J. Young and Z. S. Hu, "Effects of crystallization on the optical properties of ZnO nano-pillar thin films by sol-gel method", Current Appl. Phys., vol. 11, No. 5, pp. 1243-1248, September 2011
  257. W. Y. Weng, T. J. Hsueh, S. J. Chang, S. C. Hung, G. J. Huang, H. T. Hsueh, Z. D. Huang and C. J. Chiu, "An (AlxGa1-x)2O3 metal-semiconductor-metal VUV photodetector", IEEE Sensors Journal, Vol. 11, No. 9, pp. 1795-1799, September 2011.
  258. S. C. Shei, H. M. Lo, W. C. Lai, W. C. Lin and S. J. Chang, "GaN-based LEDs with air voids prepared by laser scribing and chemical etching", IEEE Photon. Technol. Lett., Vol. 23, No. 16, pp. 1172-1174, August 2011.
  259. K. H. Lee, P. C. Chang, S. J. Chang and S. L. Wu, “InGaN metal-semiconductor-metal photodetectors with aluminum nitride cap layers”, IEEE J. Quantum Electron., Vol. 47, No. 8, pp. 1107-1112, August 2011.
  260. Y. Z. Chiou, T. H. Chiang, D. S. Kuo, S. J. Chang, T. K. Ko and S. J. Hon, "The reliability analysis of GaN-based light-emitting diodes with different current-blocking layers", Semicond. Sci. Technol., Vol. 26, No. 8, Art. no. 085006, August 2011.
  261. Z. S. Hu, F. Y. Hung, S. J. Chang, B. R. Huang, B. C. Lin, K. J. Chen, T. P. Chen and W. I. Hsu, "Growth mechanism and field emission characteristics of GaO/GaN nanotips using iodine-assisted enhanced focused ion beam etching", Curent Nanosci., Vol. 7, No. 4, pp. 594-597, August 2011.
  262. H. T. Hsueh, T. J. Hsueh, S. J. Chang, F. Y. Hung, T. Y. Tsai, W. Y. Weng, C. L. Hsu and B. T. Dai, "CuO nanowire-based humidity sensors prepared on glass substrate", Sensors and Actuators B, Vol. 156, No. 2, pp. 906-911, August 2011.
  263. K. J. Chen, F. Y. Hung, T. S. Lui, S. J. Chang and Z. S. Hu, "The bias-crystallization mechanism on structural characteristics and electrical properties of Zn-In-Sn-O film", Mater. Tran., Vol. 52, No. 8, pp. 1560-1564, August 2011.
  264. T. H. Chiang, Y. Z. Chiou, S. J. Chang, T. K. Lin and S. P. Chang, "Effect of Si doped quantum barriers on nitride-based light emitting diodes", J. Electrochem. Soc., Vol. 158, No. 8, pp. H836-H839, August 2011
  265. S. J. Chang, C. H. Hsiao, S. C. Hung, S. J. Young, Y. C. Cheng, B. R. Huang, S. B. Wang, S. H. Chih and T. P. Chen, "Growth and characterization of ZnSe/CdSe multiquantum disks", IEEE J. Sel. Top. Quan. Electron., Vol. 17, No. 4, pp. 779-784, July/August 2011.
  266. S. P. Chang, C. Y. Lu, S. J. Chang, Y. Z. Chiou, T. J. Hsueh and C. L. Hsu, "Electrical and optical properties of UV photodetector with interlaced ZnO nanowires", IEEE J. Sel. Top. Quan. Electron., Vol. 17, No. 4, pp. 790-795, July/August 2011.
  267. W. Y. Weng, T. J. Hsueh, S. J. Chang, S. B. Wang, H. T. Hsueh, and G. J. Huang, "A high responsivity GaN nanowire UV photodetector", IEEE J. Sel. Top. Quan. Electron., Vol. 17, No. 4, pp. 996-1001, July/August 2011.
  268. K. W. Liu, S. J. Chang, S. J. Young, T. H. Hsueh, H. Hung, Y. C. Mai, S. M. Wang, K. J. Chen, Y. L. Wu and Y. Z. Chen, "InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy", Nanoscale Research Lett., Vol. 6, Art. no. 442, July 2011.
  269. S. J. Chang, C. H. Hsiao, S. C. Hung, S. H. Chih, S. B. Wang, Y. C. Cheng, B. R. Huang, S. P. Chang and S. J. Young, "ZnSe/ZnCdSeTe superlattice nanotips", IEEE Tran. Nanotechnol., Vol. 10, No. 4, pp. 682-687, July 2011.
  270. P. C. Huang, S. L. Wu, S. J. Chang, C. W. Kuo, C. Y. Chang, Y. T. Huang, Y. C. Cheng and O. Cheng, "Temperature dependence of electrical characteristics of strained nMOSFETs using stress memorization technique", IEEE Electron. Dev. Lett., Vol. 32, No. 7, pp. 835-837, July 2011.
  271. C. H. Jang, J. K. Sheu, S. J. Chang, M. L. Lee, C. C. Yang, S. J. Tu, F. W. Huang and C. J. Hsu, "Effect of growth pressure of undoped GaN layer on the ESD characteristics of GaN-based LEDs grown on patterned sapphire", IEEE Photon. Technol. Lett., Vol. 23, No. 14, pp. 968-970, July 2011.
  272. Z. D. Huang, W. Y. Weng, S. J. Chang, C. J. Chiu, T. J. Hsueh, W. C. Lai and S. L. Wu, "GaN MSM UV photodetectors with an Al0.82In0.18N intermediate layer", J. Electrochem. Soc., Vol. 158, No. 7, pp. J221-J224, July 2011.
  273. H. Y. Chen, M. H. Weng, R. Y. Yang and S. J. Chang, "The effects of sintering method on crystalline morphology and photoluminescent properties of BaY2ZnO5:Tb3+", Ceramics International, Vol. 37, No. 5, pp. 1521-1524, July 2011.
  274. W. Y. Chen, Y. H. Su, H. Kuan and S. J. Chang, "Simple method to design a tri-band bandpass filter using asymmetric SIRs for GSM, WiMax WLAN applications", Microwave Optical Technol. Lett., Vol. 53, No. 7, pp. 1573-1576, July 2011.
  275. P. C. Huang, S. L. Wu, S. J. Chang, Y. T. Huang, J. F. Chen, C. T. Lin, M. Ma and O. Cheng, "Characteristics of Si/SiO2 interface properties for CMOS fabricated on hybrid orientation substrate using amorphization/templated recrystallization (ATR) method", IEEE Tran. Electron. Dev., Vol. 58, No. 6, pp. 1635-1642, June 2011.
  276. H. M. Lo, S. C. Shei, X. F. Zeng, S. J. Chang and H. Y. Lin, "AlGaInP-based LEDs with p+-GaP window layer and a thermally annealed ITO contact", IEEE J. Quan. Electron., Vol. 47, No. 6, pp. 803-809, June 2011.
  277. W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang and H. T. Hsueh, "A β-Ga2O3/GaN hetero-structured solar-blind and visible-blind dual-band photodetector", IEEE Sensors Journal, Vol. 11, No. 6, pp. 1491-1492, June 2011.
  278. C. C. Huang, S. J. Chang, C. H. Kuo, C. H. Wu, C. H. Ko, C. H. Wann, Y. C. Cheng and W. J. Lin, "Single crystalline GaN epitaxial layer prepared on nano-patterned Si(001) substrate", J. Electrochem. Soc., Vol. 158, No. 6, pp. H626-H629, June 2011.
  279. S. J. Chang, S. H. Chih, C. H. Hsiao, B. W. Lan, S. B. Wang, Y. C. Cheng, T. C. Li and S. P. Chang, "Growth and photoelectric properties of twinned ZnSe1 xTex nanotips", IEEE Tran. Nanotechnol., Vol. 10, No. 3, pp. 379-384, May 2011.
  280. Y. T. Huang, S. L. Wu, S. J. Chang, C. K. Hung, T. J. Wang, C. W. Kuo, C. T. Huang and O. Cheng, "Enhancement of CMOSFETs performance by utilizing SACVD-based shallow trench isolation for the 40-nm node and beyond", IEEE Tran. Nanotechnol., Vol. 10, No. 3, pp. 433-438, May 2011.
  281. H. M. Lo, S. C. Shei, X. F. Zeng, S. J. Chang and H. Y. Lin, "Postannealing effect on ITO/p+-GaP with a diffused layer", J. Electrochem. Soc., Vol. 158, No. 5, pp. H506-H509, May 2011.
  282. H. T. Hsueh, S. J. Chang, F. Y. Hung, W. Y. Weng, C. L. Hsu, T. J. Hsueh, T. Y. Tsai and B. T. Dai, "Fabrication of coaxial p-Cu2O/n-ZnO nanowire photodiodes", Superlattice Microst., Vol. 49, No. 5, pp. 572-580, May 2011.
  283. N. M. Lin, S. C. Shei and S. J. Chang, "Nitride-based LEDs with high-reflectance and wide-angle Ag mirror+SiO2/TiO2 DBR backside reflector", IEEE/OSA J. Lightwave Technol., Vol. 29, No. 7, pp. 1033-1038, April 2011.
  284. W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang and H. T. Hsueh, "A β-Ga2O3 solar-blind photodetector prepared by furnace annealing of GaN thin film", IEEE Sensors Journal, Vol. 11, No. 4, pp. 999-1003, April 2011.
  285. P. T. Hsieh, R. W. K. Chuang, C. Q. Chang, C. M. Wang and S. J. Chang, "Optical and structural characteristics of yttrium doped ZnO films using sol-gel technology", J. Sol-Gel Sci. Technol., Vol. 58, No. 4, pp. 42-47, April 2011.
  286. H. T. Hsueh, S. J. Chang, F. Y. Hung, W. Y. Weng, C. L. Hsu, T. J. Hsueh, S. S. Lin and B. T. Dai, "Ethanol gas sensor of crabwise CuO nanowires prepared on glass substrate", J. Electrochem. Soc., Vol. 158, No. 4, pp. J106-J109, April 2011.
  287. R. Y. Yang, H. Y. Chen, C. M. Hsuing and S. J. Chang, "Crystalline morphology and photoluminescent properties of YInGe2O7:Eu3+ phosphors prepared from microwave and conventional sintering", Ceramics International, Vol. 37, No. 3, pp. 749-752, April 2011
  288. C. W. Kuo, S. L. Wu, H. Y. Lin, Y. T. Huang, S. J. Chang, D. G. Hong, C. Y. Wu, Y. C. Cheng and O. Cheng, “Investigation of stress memorization process on low-frequency noise performance for strained Si n-type metal-oxide-semiconductor field-effect transistors”, Jpn. J. Appl. Phys., Vol. 50, No. 4, Art. no. 04DC20, April 2011
  289. Y. T. Huang, S. L. Wu, H. Y. Lin, C. W. Kuo, S. J. Chang, D. G. Hong, C. Y. Wu, C. T. Huang and O. Cheng, “Impact of reducing shallow trench isolation mechanical stress on active length for 40 nm n-type metal-oxide-semiconductor field-effect transistors”, Jpn. J. Appl. Phys., Vol. 50, No. 4, Art. no. 04DC21, April 2011
  290. W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang and H. T. Hsueh, "A β-Ga2O3/GaN Schottky barrier photodetector", IEEE Photon. Technol. Lett., Vol. 23, No. 7, pp. 444-446, April 2011.
  291. H. Y. Lin, S. L. Wu, C. C. Cheng, C. H. Ko, C. H. Wann, Y. R. Lin, S. J. Chang and T. B. Wu, "Influence of surface reconstruction on the atomic-layer-deposited HfO2/Al2O3/n-InAs metal-oxide-semiconductor capacitors", Appl. Phys. Lett., Vol. 98, No. 12, Art. no. 123509, March 2011.
  292. S. C. Shei, S. J. Chang and P. Y. Lee, "Rinsing effects on successive ionic layer adsorption and reaction method for deposition of ZnO thin films", J. Electrochem. Soc., Vol. 158, No. 3, pp. H208-H213, March 2011.
  293. T. H. Chiang, Y. Z. Chiou, S. J. Chang, C. K. Wang, T. K. Ko, T. K. Lin, C. J. Chiu and S. P. Chang, "Improved optical and ESD characteristics for GaN-based LEDs with an n--GaN layer", IEEE Tran. Dev. Mater. Reliability, Vol. 11, No. 1, pp. 76-80, March 2011.
  294. P. C. Huang, S. L. Wu, S. J. Chang, Y. T. Huang, C. T. Lin, M. Ma and O. Cheng, "Effect of annealing time on Si/SiO2 interface property for CMOS fabricated on hybrid orientation substrate with ATR method", Mater. Chem. Phys., Vol. 126, No. 1-2, pp. 16-19, March 2011.
  295. S. J. Young, C. H. Hsiao, S. J. Chang, L. W. Ji, T. H. Meen, T. P. Chen, K. W. Liu and K. J. Chen, "High temperature characteristics of ZnO-based MOS-FETs with a photochemical vapor deposition SiO2 gate dielectric", J. Phys. Chem. Solids, Vol. 72, No. 2, pp. 147-149, February 2011.
  296. W. Y. Weng, S. J. Chang, C. L. Hsu and T. J. Hsueh, "A ZnO-nanowire phototransistor prepared on glass substrates", ACS Appl. Mater. Interfaces, Vol. 3, No. 2, pp. 162-166, February 2011.
  297. C. C. Huang, S. J. Chang, C. H. Kuo, C. H. Ko, C. H. Wann, Y. C. Cheng and W. J. Lin, "GaN epitaxial layers prepared on nano-patterned Si(001) substrate", J. Nanosci. Nanotechnol., Vol. 11, No. 2, pp. 1248-1251, February 2011.
  298. K. J. Chen, F. Y. Hung, S. J. Chang, S. P. Chang, Y. C. Mai and Z. S. Hu, "A study on crystallization, optical and electrical properties of the advanced ZITO thin films using co-sputtering system", J. Alloys and Compounds, Vol. 509, No. 8, pp. 3667-3671, February 2011
  299. Z. S. Hu, F. Y. Hung, S. J. Chang, B. R. Huang, B. C. Lin, K. J. Chen and W. I. Hsu, "Nanostructural characteristics of oxide-cap GaN nanotips by iodine-gallium ions etching", J. Alloys and Compounds, Vol. 509, No. 5, pp. 2360-2363, February 2011.
  300. S. J. Young, S. J. Chang, L. W. Ji, T. H. Meen, C. H. Hsiao, K. W. Liu, K. J. Chen and Z. S. Hu, "Thermally stable Ir/n-ZnO Schottky diodes", Microelectron. Eng., Vol. 88, No. 1, pp. 113-116, January 2011.
  301. Z. S. Hu, F. Y. Hung, S. J. Chang, K. J. Chen, W. L. Wang, S. J. Young and T. P. Chen, "Effects of Ag nanoshape and AgGa phase in Ag-Si nanostructure using 2-step etching process", J. Alloys and Compounds, Vol. 509, No. 3, pp. 758-763, January 2011.
  302. S. P. Chang, C. Y. Lu, S. J. Chang, Y. Z. Chiou, C. L. Hsu, P. Y. Su and T. J. Hsueh, "A novel fabrication of p-n diode based on ZnO nanowire/p-NiO heterojunction", Jpn. J. Appl. Phys., Vol. 50, No. 1, Art. no. 01AJ05, January 2011.
  303. H. C. Hung, C. J. Wu, T. J. Yang and S. J. Chang, "Analysis of tunable multiple-filtering property in a photonic crystal containing strongly extrinsic semiconductor", J. Electromagn. Waves and Appl., Vol. 24, No. 14-15, pp. 2089-2099, 2011.
  304. W. H. Lin, C. J. Wu, T. J. Yang and S. J. Chang, "Terahertz multichanneled filter in a superconducting photonic crystal", Optics Express, Vol. 18, No. 20, pp. 27155-27166, December 2010.
  305. H. M. Lo, Y. T. Hsieh, S. C. Shei, Y. C. Lee, X. F. Zeng, W. Y. Weng, N. M. Lin and S. J. Chang, "AlGaInP LEDs prepared by contact-transferred and mask-embedded lithography", IEEE J. Quan. Electron., Vol. 46, No. 12, pp. 1834-1839, December 2010.
  306. S. J. Chang, W. Y. Weng, C. L. Hsu and T. J. Hsueh, "High sensitivity of ZnO nanowires-based ammonia gas sensor with Pt nano-particles", Nano Communication Networks, Vol. 1, No. 4, pp. 283-288, December 2010.
  307. L. W. Ji, T. H. Fang, C. Z. Wu, T. T. Chu, H. L. Jiang, S. J. Chang, S. M. Peng, J. C. Zhong and W. Y. Chang, "Structural and optoelectronic characteristics of well-aligned ZnO nanorod arrays for photodiodes", J. Nanoelectron. Optoelectron., Vol. 5, No. 3, pp. 295-299, December 2010.
  308. K. J. Chen, T. H. Fang, L. W. Ji, S. J. Chang and S. J. Young, "Fabrication and characteristics of silicon micro-tip arrays", International J. Modern Phys. B, Vol. 24, No. 28, pp. 5601-5611, November 2010.
  309. C. J. Chiu, S. P. Chang and S. J. Chang, "High-performance a-IGZO thin-film transistor using Ta2O5 gate dielectric", IEEE Electron. Dev. Lett., Vol. 31, No. 11, pp. 1245-1247, November 2010.
  310. H. Y. Chen, R. Y. Yang and S. J. Chang, "Improving crystalline morphology and photoluminescent properties of BaY2ZnO5:Eu3+ phosphors prepared using microwave assisted sintering", Maters. Lett., Vol. 64, No. 22, pp. 2548-2550, November 2010.
  311. W. H. Lin, C. J. Wu and S. J. Chang, "Analysis of angle-dependent unusual transmission in lossy single-negative (SNG) materials", Solid State Communications, Vol. 150, No. 37-38, pp. 1729-1732, October 2010.
  312. H. M. Lo, Y. T. Hsieh, S. C. Shei, Y. C. Lee, X. F. Zeng, W. Y. Weng, N. M. Lin and S. J. Chang, "Enhanced output power for InGaAlP LEDs by contact-transferred and mask-embedded lithography", Superlattice Microst., Vol. 48, No. 4, pp. 358-364, October 2010.
  313. S. J. Chang, S. M. Wang, P. C. Chang, C. H. Kuo, S. J. Young, T. P. Chen, S. L. Wu and B. R. Huang, "GaN Schottky barrier photodetectors", IEEE Sensors Journal, Vol. 10, No. 10, pp. 1609-1614, October 2010.
  314. Y. S. Wang, S. J. Chang, C. L. Tsai, M. C. Wu, Y. Z. Chiou, S. P. Chang and W. Lin, "10-Gb/s planar InGaAs P-I-N photodetectors", IEEE Sensors Journal, Vol. 10, No. 10, pp. 1559-1563, October 2010.
  315. W. H. Lin, C. J. Wu and S. J. Chang, "Angular dependence of wave reflection in a lossy single-negative bilayer", Prog. in Electromagn. Res. (PIER), Vol. 107, pp. 253-267, 2010.
  316. P. C. Huang, S. L. Wu, S. J. Chang, Y. T. Huang, C. W. Kuo, C. Y. Chang, Y. C. Cheng and O. Cheng, "Evaluation of interface property and DC characteristics enhancement in nanoscale n-channel metal-oxide-semiconductor field-effect transistor using stress memorization technique", Jpn. J. Appl. Phys., Vol. 49, No. 9, Art. no. 090207, September 2010.
  317. C. W. Kuo, S. L. Wu, S. J. Chang, Y. T. Huang, Y. C. Cheng and O. Cheng, "Impact of stress-memorization technique induced-tensile strain on low frequency noise in n-channel metal-oxide-semiconductor transistors", Appl. Phys. Lett., Vol. 97, No. 12, Art. no. 123501, September 2010.
  318. W. Y. Weng, S. J. Chang, C. L. Hsu, S. P. Chang and T. J. Hsueh, "Laterally grown n-ZnO nanowire/p-GaN heterojunction light emitting diodes", J. Electrochem. Soc., Vol. 157, No. 9, pp. H866-H868, September 2010.
  319. C. H. Lan, J. D. Hwang, S. J. Chang, J. S. Liao, Y. C. Cheng, W. J. Lin and J. C. Lin, "Investigations of ZnO nanowires and ZnO/p-GaN heterojunction diodes grown by different aqueous solutions zinc nitrate and zinc acetate", Electrochem. Solid State Lett., Vol. 13, No. 11, pp. H363-H365, August 2010.
  320. P. C. Chang, Y. K. Su, K. J. Lee, C. L. Yu, S. J. Chang, C. H. Liu, "Improved performance of GaN-based Schottky barrier photodetectors by annealing Ir/Pt Schottky contact in O2", J. Alloys Compounds, Vol. 504, pp.S429-S431, August 2010.
  321. C. C. Huang, S. J. Chang, R. W. Chuang, J. C. Lin, Y. C. Cheng and W. J. Lin, "GaN grown on Si(111) with step-graded AlGaN intermediate layers", Appl. Sur. Sci., Vol. 256, No. 21, pp. 6367-6370, August 2010.
  322. Z. S. Hu, F. Y. Hung, S. J. Chang, K. J. Chen and Y. Z. Chen, "Crystallization effect of Al-Ag alloying layer in PL enhancement of ZnO thin film", Intermetallics, Vol. 18, No. 8, pp. 1428-1431, August 2010.
  323. C. H. Chen, S. J. Chang, S. P. Chang, M. J. Li, T. J. Hsueh, A. D. Hsu and C. L. Hsu, "Fabrication of a white-light-emitting diode by doping gallium into ZnO nanowire on a p-GaN substrate", J. Phys. Chem. C, Vol. 114, No. 29, pp. 12422-12426, July 2010.
  324. S. J. Chang, C. H. Hsiao, B. W. Lan, S. C. Hung, B. R. Huang, S. J. Young, Y. C. Cheng and S. H. Chih, "Growth of ternary ZnCdSe nanowires and the fabrication of ZnCdSe nanowire photodetector", Superlattice Microst., Vol. 48, No. 1, pp. 50-57, July 2010.
  325. K. T. Liu, S. J. Chang, S. Wu, and Y. Horikoshi, "Crystal polarity effects on magnesium implantation into GaN layer", Jpn. J. Appl. Phys., Vol. 49, No. 7, Art. no. 071001, July 2010.
  326. K. J. Chen, F. Y. Hung, Y. T. Chen, S. J. Chang and Z. S. Hu, "Surface characteristics, optical and electrical properties on sol-gel synthesized Sn-doped ZnO thin film", Mater. Tran., Vol. 51, No. 7, pp. 1340-1345, July 2010.
  327. W. H. Lin, C. J. Wu, T. J. Yang and S. J. Chang, "Terahertz intrinsic and effective surface impedances of high-temperature superconducting thin films", J. Electromagn. Waves and Appl., Vol. 24, No. 17-18, pp. 2589-2603, 2010.
  328. S. J. Chang, W. Y. Chen and M. H. Weng, "A miniaturized dual-mode bandpass filter with a wide stopband realized on the ultra-thin flexible substrate", J. Electromagn. Waves and Appl., Vol. 24, No. 17-18, pp. 2363-2370, 2010.
  329. C. H. Lan, J. D. Hwang, S. J. Chang, Y. C. Cheng, W. J. Lin, J. C. Lin, J. S. Liao and Y. L. Lin, "(NH4)2Sx-treated AlGaN MIS photodetectors with LPD SiO2 layer", J. Electrochem. Soc., Vol. 157, No. 6, pp. H613-H616, June 2010.
  330. K. J. Chen, F. Y. Hung, S. J. Chang, S. J. Young, Z. S. Hu and S. P. Chang, "An investigation of the microstructure, optical and electrical properties of ZITO thin film using the sol-gel method", J. Sol-Gel Sci. Technol., Vol. 54, No. 3, pp. 347-354, June 2010.
  331. S. J. Chang, S. M. Wang, T. P. Chen, S. J. Young, Y. C. Lin, S. L. Wu and B. R. Huang, "GaN Schottky barrier photodetectors prepared on patterned sapphire substrate", J. Electrochem. Soc., Vol. 157, No. 6, pp. J212-J215, June 2010.
  332. C. H. Hsiao, S. C. Hung, S. H. Chih, S. B. Wang, Y. C. Cheng, B. R. Huang, S. J. Young and S. J. Chang, "ZnSe/ZnSeTe superlattice nanotips", Nanoscale Research Lett., Vol. 5, No. 6, pp. 930-934, June 2010.
  333. S. F. Yu, S. J. Chang, R. M. Lin, Y. H. Lin, Y. C. Lu, S. P. Chang and Y. Z. Chiou, "Growth of quaternary AlInGaN with various TMI molar rates", J. Crystal Growth, Vol. 312, No. 12-13, pp. 1920-1924, June 2010.
  334. S. P. Chang, S. J. Chang, C. Y. Lu, M. J. Li, C. L. Hsu, Y. Z. Chiou, T. J. Hsueh and I. C. Chen, "A ZnO nanowire-based humidity sensor", Superlattice Microst., Vol. 49, No. 6, pp. 772-778, June 2010.
  335. B. W. Lan, C. H. Hsiao, S. C. Hung, S. J. Chang, S. J. Young, Y. C. Cheng, S. H. Chih and B. R. Huang, " ZnCdSe nanowires grown by molecular beam epitaxy", J. Vac. Sci. Technol. B, Vol. 28, No. 3, pp. 613-616, May/June 2010.
  336. W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang and S. P. Chang, "A solar-blind β-Ga2O3 nanowire photodetector", IEEE Photon. Technol. Lett., Vol. 22, No. 10, pp. 709-711, May 2010.
  337. B. C. Wang, T. K. Kang, S. L. Wu and S. J. Chang, "Tensile CESL-induced strain dependence on impact ionization efficiency in nMOSFETs", Microelectron. Reliability, Vol. 50, No. 5, pp. 610-613, May 2010.
  338. S. J. Chang, S. M. Wang, P. C. Chang, C. H. Kuo, S. J. Young and T. P. Chen, "GaN MSM photodetectors prepared on nanorod template", IEEE Photon. Technol. Lett., Vol. 22, No. 9, pp. 625-627, May 2010.
  339. C. Y. Hu, J. F. Chen, S. C. Chen, S. J. Chang, K. M. Lee and C. P. Lee, "Ultrathin DPN STI SiON liner for 40 nm low-power CMOS technology", Solid State Electron., Vol. 54, No. 5, pp. 564-567, May 2010.
  340. C. H. Hsiao, S. J. Chang, S. C. Hung, Y. C. Cheng, B. R. Huang, S. B. Wang, B. W. Lan and S. H. Chih, "ZnSe/ZnCdSe heterostructure nanowires", J. Crystal Growth, Vol. 312, No. 10, pp. 1670-1675, May 2010.
  341. K. H. Lee, P. C. Chang, S. J. Chang, Y. K. Su and C. L. Yu, "AlGaN/GaN high electron mobility transistors based on InGaN/GaN multiquantum-well structures", Appl. Phys. Lett., Vol. 96, No. 21, Art. no. 212105, May 2010.
  342. P. C. Huang, S. L. Wu, S. J. Chang, Y. T. Huang, C. T. Lin, M. Ma and O. Cheng, "Electrical characteristics of nMOSFETs fabricated on hybrid orientation substrate with amorphization/templated recrystallization method", Microelectron. Reliability, Vol. 50, No. 5, pp. 662-665, May 2010.
  343. Y. T. Huang, S. L. Wu, S. J. Chang, C. W. Kuo, Y. T. Chen, Y. C. Cheng and O. Cheng, "Dependence of DC parameters on layout and low-frequency noise behavior in strained-Si nMOSFETs fabricated by stress-memorization technique", IEEE Electron. Dev. Lett., Vol. 31, No. 5, pp. 500-502, May 2010.
  344. D. S. Kuo, S. J. Chang, C. F. Shen, T. C. Ko, T. K. Ko and S. J. Hon, "Nitride-based LEDs with oblique sidewalls and a light guiding structure", Semicond. Sci. Technol., Vol. 25, No. 5, Art. no. 055010, May 2010.
  345. Y. X. Sun, W. S. Chen, S. C. Hung, K. T. Lam, C. H. Liu and S. J. Chang, "GaN-based power flip-chip LEDs with an internal ESD protection diode on Cu sub-mount", IEEE Tran. Adv. Packaging, Vol. 33, No. 2, pp. 433-437, May 2010.
  346. C. H. Chen, S. J. Chang, S. P. Chang, Y. C. Tsai, I. C. Chen, T. J. Hsueh and C. L. Hsu, "Enhanced field emission of well-aligned ZnO nanowire arrays illuminated by UV", Chem. Phys. Lett., Vol. 490, No. 4-6, pp. 176-179, April 2010.
  347. C. H. Chen, S. J. Chang, M. H. Wu, S. Y. Tsai and H. J. Chien, "AlGaN metal-semiconductor-metal photodetectors with low-temperature AlN cap layer and recessed electrodes", Jpn. J. Appl. Phys., Vol. 49, No. 4, Art. no. 04DG05, April 2010.
  348. C. Y. Hu, J. F. Chen, S. C. Chen, S. J. Chang, K. M. Lee and C. P. Lee, "Improvement of poly-pimple-induced device mismatch on 6T-SRAM at 65-nm CMOS technology", IEEE Tran. Electron. Dev., Vol. 57, No. 4, pp. 956-959, April 2010.
  349. S. J. Chang, W. Y. Weng, W. C. Lai, T. J. Hsueh, S. C. Shei, X. F. Zeng and S. L. Wu, "GaN Schottky barrier photodetectors with a semi-insulating AlInN cap layer", J. Electrochem. Soc., Vol. 157, No. 4, pp. J120-J124, April 2010.
  350. P. C. Chang, K. H. Lee, S. J. Chang, Y. K. Su, T. C. Lin and S. L. Wu, "III-nitride Schottky rectifiers with an AlGaN/GaN/AlGaN/GaN quadruple layer and their applications to UV detection", IEEE Sensors Journal, Vol. 10, No. 4, pp. 799-804, April 2010.
  351. C. H. Jang, J. K. Sheu, C. M. Tsai, S. J. Chang, W. C. Lai, M. L. Lee, T. K. Ko, C. F. Shen and S. C. Shei, "Improved performance of GaN-based blue LEDs with the InGaN insertion layer between the MQW active layer and the n-GaN cladding layer", IEEE J. Quan. Electron., Vol. 46, No. 4, pp. 513-517, April 2010.
  352. H. T. Hsueh, T. J. Hsueh, S. J. Chang, F. Y. Hung, C. L. Hsu, W. Y. Weng, C. W. Liu, Y. H. Lee and B. T. Dai, "Selective growth of silicon nanowires on glass substrate with an ultrathin a-Si:H layer", Electrochem. Solid State Lett., Vol. 13, No. 4, pp. K29-K31, April 2010.
  353. K. H. Lee, P. C. Chang, S. J. Chang, Y. K. Su, Y. C. Wang, C. L. Yu and C. H. Kuo, "Dislocation reduction in nitride-based Schottky diodes by using multiple MgxNy/GaN nucleation layers", Thin Solid Films, Vol. 518, pp. 2839-2842, March 2010.
  354. C. Y. Hu, J. F. Chen, S. C. Chen, S. J. Chang, S. M. Wang, C. P. Lee and K. M. Lee, "Shallow trench isolation stress modification by optimal shallow trench isolation process for sub-65-nm low power complementary metal oxide semiconductor technology", J. Vacuum Sci. Technol. B, Vol. 28, No. 2, pp. 391-397, March 2010.
  355. C. H. Kuo, Y. K. Fu, G. C. Chi and S. J. Chang, "Efficiency dependence on degree of localization states in GaN-based asymmetric two-step light-emitting diode with a low indium content InGaN shallow step", IEEE J. Quan. Electron., Vol. 46, No. 3, pp. 391-395, March 2010.
  356. K. J. Chen, F. Y. Hung, S. J. Chang and Z. S. Hu, "The crystallized mechanism and optical properties of sol-gel synthesized ZnO nanowires", J. Electrochem. Soc., Vol. 157, No. 3, pp. H241-H245, March 2010.
  357. W. Y. Weng, S. J. Chang, C. L. Hsu, T. J. Hsueh and S. P. Chang, "A lateral ZnO nanowire photodetector prepared on glass substrate", J. Electrochem. Soc., Vol. 157, No. 2, pp. K30-K33, February 2010.
  358. C. H. Hsiao, S. J. Chang, S. B. Wang, S. P. Chang, Y. C. Cheng, T. C. Li, W. J. Lin and B. R. Huang, "Quaternary ZnCdSeTe nanowires", J. Nanosci. Nanotechnol., Vol. 10, No. 2, pp. 798-802, February 2010.
  359. C. Y. Lu, S. P. Chang, S. J. Chang, C. L. Hsu, Y. Z. Chiou and I. C. Chen, "ZnO nanowire-based UV photodetector", J. Nanosci. Nanotechnol., Vol. 10, No. 2, pp. 1135-1138, February 2010.
  360. W. Y. Chen, S. J. Chang, M. H. Weng and C. Y. Hung, "Design of the fractal-based dual-mode bandpass filter on ultra thin liquid-crystal-polymer substrate", J. Electromagn. Waves and Appl., Vol. 24, No. 1, pp. 391-399, January 2010.
  361. C. Y. Hu, J. F. Chen, S. C. Chen, S. J. Chang, C. P. Lee and T. H. Lee, "Improved poly gate engineering for 65 nm low power CMOS technology", J. Electrochem. Soc., Vol. 157, No. 1, pp. H38-H43, January 2010.
  362. S. J. Chang, C. H. Hsiao, S. C. Hung, S. H. Chih, B. W. Lan, S. B. Wang, S. P. Chang, Y. C. Cheng, T. C. Li and B. R. Huang, "Growth of ZnSe1 xTex nanotips and the fabrication of ZnSe1 xTex nanotip-based photodetector", J. Electrochem. Soc., Vol. 157, No. 1, pp. K1-K4, January 2010.
  363. K. H. Lee, P. C. Chang, S. J. Chang, Y. K. Su, Y. C. Wang, C. H. Liu, "High-sensitivity nitride-based ultraviolet photosensors with a low-temperature AlGaN interlayer", J. Electron. Mater., Vol. 39, No.1, pp. 29-33, January, 2010.
  364. C. L. Tsai, Y. L. Chou, Y. S. Wang, S. J. Chang, M. C. Wu and W. Lin, "1.3 μm strain-compensated InGaAsP planar buried heterostructure laser diodes with a TO-can package for optical fiber communications", J. Electrochem. Soc., Vol. 156, No. 12, pp. H903-H907, December 2009.
  365. S. J. Chang, C. H. Hsiao, S. B. Wang, Y. C. Cheng, T. C. Li, S. P. Chang, B. R. Huang and S. C. Hung, "A quaternary ZnCdSeTe nanotip photodetector", Nanoscale Research Lett., Vol. 4, No. 12, pp. 1540-1546, December 2009.
  366. C. H. Chen, S. J. Chang, S. P. Chang, M. J. Li, I. C. Chen, T. J. Hsueh and C. L. Hsu, "Electroluminescence from n-ZnO nanowires/p-GaN heterostructure light-emitting diodes", Appl. Phys. Lett., Vol. 95, No. 22, Art. no. 223101, November 2009.
  367. R. M. Lin, Y. C. Lu, S. F. Yu, Y. C. S. Wu, C. H. Chiang, W. C. Hsu and S. J. Chang, "Enhanced extraction and efficiency of blue light-emitting diodes prepared using two-step-etched patterned sapphire substrates", J. Electrochem. Soc., Vol. 156, No. 11, pp. H874-H876, November 2009.
  368. S. C. Shei, W. C. Lai, J. K. Sheu, I. H. Hung and S. J. Chang, "The output power enhancements of GaN-based blue light-emitting diodes with highly reflective Ag/Cr/Au trilayer omnidirectional reflective electrode pads", Jpn. J. Appl. Phys., Vol. 48, No. 10, Art. no. 102103, October 2009.
  369. P. C. Chang, K. H. Lee, S. J. Chang, Y. K. Su and C. H. Liu, "AlGaN/GaN two-dimensional electron gas Schottky barrier photodiodes with multiple MgxNy/GaN layers", Semicond. Sci. Technol., Vol. 24, No. 10, Art. no. 105005, October 2009.
  370. C. H. Hsiao, S. J. Chang, S. B. Wang, S. C. Hung, S. P. Chang, T. C. Li, W. J. Lin and B. R. Huang, "MBE growth of ZnSe nanowires on oxidized silicon substrate", Superlattice Microst., Vol. 46, No. 4, pp. 572-577, October 2009.
  371. W. Y. Weng, R. W. Chuang, S. J. Chang, W. C. Lai, T. J. Hsueh, S. C. Shei, X. F. Zeng and S. L. Wu, "GaN MSM photodetectors with a semi-insulating AlInN cap layer and sputtered ITO transparent electrodes", Electrochem. Solid State Lett., Vol. 12, No. 10, pp. H369-H372, October 2009.
  372. W. Y. Weng, T. J. Hsueh, S. J. Chang, S. P. Chang and C. L. Hsu, "Laterally-grown ZnO-nanowire photodetectors on glass substrate", Superlattice Microst., Vol. 46, No. 5, pp. 797-802, September 2009.
  373. Z. S. Hu, F. Y. Hung, S. J. Chang, K. J. Chen, W. L. Wang, S. J. Young and T. P. Chen, "Two-step etching mechanism of Ag-Si nanostructure with various Ag nanoshape depositions", Maters. Trans., Vol. 50, No. 8, pp. 1992-1997, August 2009.
  374. K. T. Liu, S. J. Chang and S. Wu, "Effects of phosphorus implantation on the activation of magnesium doped in GaN", Jpn. J. Appl. Phys., Vol. 48, No. 8, Art. no. 081003, August 2009.
  375. H. Y. Lin, S. L. Wu, S. J. Chang, C. W. Kuo. Y. P. Wang and S. C. Hung, "DC and 1/f noise characteristics of strained-Si nMOSFETs using chemical-mechanical-polishing technique", Solid State Electron., Vol. 53, No. 8, pp. 905-908, August 2009.
  376. C. W. Kuo, S. L. Wu, S. J. Chang, H. Y. Lin. Y. P. Wang and S. C. Hung, "Investigation of interface characteristics in strained-Si nMOSFETs", Solid State Electron., Vol. 53, No. 8, pp. 897-900, August 2009.
  377. C. M. Tsai, J. K. Sheu, W. C. Lai, M. L. Lee, S. J. Chang, C. S. Chang, T. K. Ko and C. F. Shen, "GaN-based LEDs output power improved by textured GaN/sapphire interface using in situ SiH4 treatment process during epitaxial growth", IEEE J. Sel. Top. Quan. Electron., Vol. 15, No. 4, pp. 1276-1280, July/August 2009.
  378. S. J. Chang, W. S. Chen, S. C. Shei, C. F. Shen, T. K. Ko, J. M. Tsai, W. C. Lai, J. K. Sheu, A. J. Lin and S. C. Hung, "GaN-based power flip-chip LEDs with Cu submount", IEEE J. Sel. Top. Quan. Electron., Vol. 15, No. 4, pp. 1287-1291, July/August 2009.
  379. K. H. Lee, P. C. Chang, S. J. Chang, Y. C. Wang, C. L. Yu and S. L. Wu, "AlGaN/GaN Schottky barrier UV photodetectors with a GaN sandwich layer", IEEE Sensors Journal, Vol. 9, No. 7, pp. 814-819, July 2009.
  380. C. H. Lan, J. D. Hwang, S. J. Chang, Y. C. Lin, Y. C. Cheng, W. J. Lin, J. C. Lin and K. J. Chang, "Nitride-based metal-insulator-semiconductor capacitors with liquid-phase deposition oxide and (NH4)2Sx pretreatment prepared on sapphire substrates", Semicond. Sci. Technol., Vol. 24, No. 7, Art. no. 075026, July 2009.
  381. C. H. Chen, S. J. Chang, S. P. Chang, M. J. Li, I. C. Chen, T. J. Hsueh and C. L. Hsu, "Novel fabrication of UV photodetector based on ZnO nanowire/p-GaN heterojunction", Chem. Phys. Lett., Vol. 476, No. 1-3, pp. 69-72, July 2009.
  382. K. H. Lee, P. C. Chang, S. J. Chang, Y. K. Su, Y. C. Wang, C. L. Yu and S. L. Wu, "Al0.25Ga0.75N/GaN Schottky barrier photodetectors with an Al0.3Ga0.7N intermediate layer", J. Electrochem. Soc., Vol. 156, No. 7, pp. J199-J202, July 2009.
  383. S. P. Chang, R. W. Chuang, S. J. Chang, C. Y. Lu, Y. Z. Chiou and S. F. Hsieh, "Surface HCl treatment in ZnO photoconductive sensors", Thin Solid Films, Vol. 517, No. 17, pp. 5050-5053, July 2009.
  384. S. P. Chang, R. W. Chuang, S. J. Chang, C. Y. Lu, Y. Z. Chiou and S. F. Hsieh, "MBE n-ZnO/MOCVD p-GaN heterojunction light-emitting diode", Thin Solid Films, Vol. 517, No. 17, pp. 5054-5056, July 2009.
  385. C. Y. Lu, S. P. Chang, S. J. Chang, T. J. Hsueh, C. L. Hsu, Y. Z. Chiou and I. C. Chen, "A lateral ZnO nanowire UV photodetector prepared on a ZnO:Ga/glass template", Semicond. Sci. Technol., Vol. 24, No. 7, Art. no. 075005, July 2009.
  386. S. J. Chang, W. S. Chen, S. C. Shei, C. T. Kuo, T. K. Ko, C. F. Shen, J. M. Tsai, W. C. Lai, J. K. Sheu and A. J. Lin, "High-brightness InGaN-GaN power flip-chip LEDs", IEEE/OSA J. Lightwave Technol., Vol. 27, No. 12, pp. 1985-1989, June 2009.
  387. W. Y. Weng, S. J. Chang, T. J. Hsueh, C. L. Hsu, M. J. Li and W. C. Lai, "AlInN resistive ammonia gas sensors", Sensors and Actuators B, Vol. 140, No. 1, pp. 139-142, June 2009.
  388. Y. S. Wang, S. J. Chang, C. L. Tsai, M. C. Wu, Y. Z. Chiou, Y. H. Huang and W. Lin, "High-speed InGaAs P-I-N photodetector with planar buried heterostructure", IEEE Tran. Electron. Dev., Vol. 56, No. 6, pp. 1347-1350, June 2009.
  389. K. J. Chen, F. Y. Hung, S. J. Chang and S. J. Young, "Optoelectronic characteristics of UV photodetector based on ZnO nanowire thin films", J. Alloys Compounds, Vol. 479, No. 1-2, pp. 674-677, June 2009.
  390. K. H. Lee, P. C. Chang, S. J. Chang, Y. C. Wang, C. L. Yu and S. L. Wu, "Characterization of AlGaN/GaN metal-semiconductor-metal photodetectors with a low-temperature AlGaN interlayer", IEEE Sensors Journal, Vol. 9, No. 6, pp. 723-727, June 2009.
  391. K. T. Lam, S. C. Hung, C. F. Shen, C. H. Liu, Y. X. Sun and S. J. Chang, "Effects of the sapphire substrate thickness on the performances of GaN-based LEDs", Semicond. Sci. Technol., Vol. 24, No. 6, Art. no. 065002, June 2009.
  392. S. P. Chang, S. J. Chang, C. Y. Lu, Y. Z. Chiou, R. W. Chuang and H. C. Lin, "Low-frequency noise characteristics of GaN-based UV photodetectors with AlN/GaN buffer layers prepared on Si substrates", J. Crystal Growth, Vol. 311, No. 10, pp. 3003-3006, May 2009.
  393. K. J. Chen, F. Y. Hung and S. J. Chang, "Structural characteristic, Raman analysis and optical properties of indium-doped ZnO nanoparticles prepared by sol-gel method", J. Nanosci. Nanotechnol., Vol. 9, No. 5, pp. 3325-3329, May 2009.
  394. W. Y. Weng, S. J. Chang, W. C. Lai, T. J. Hsueh, S. C. Shei, X. F. Zeng, S. L. Wu and S. C. Hung, "GaN MSM photodetectors with a semi-insulating Mg-doped AlInN cap layer", IEEE Photon. Technol. Lett., Vol. 21, No. 8, pp. 504-506, April 2009.
  395. D. S. Kuo, S. J. Chang, T. K. Ko, C. F. Shen, S. J. Hon and S. C. Hung, "Nitride-based LEDs with phosphoric acid etched undercut sidewalls", IEEE Photon. Technol. Lett., Vol. 21, No. 8, pp. 510-512, April 2009.
  396. K. J. Chen, F. Y. Hung, S. J. Chang, and S. J. Young, "Optoelectronic characteristics of UV photodetector based on ZnO nanopillar thin films prepared by sol-gel method", Mater. Tran., Vol. 50, No. 4, pp. 922-925, April 2009.
  397. C. Y. Lu, S. P. Chang, S. J. Chang, T. J. Hsueh, C. L. Hsu, Y. Z Chiou and I. C. Chen, "ZnO nanowire-based oxygen gas sensor", IEEE Sensors Journal, Vol. 9, No. 4, pp. 485-489, April 2009.
  398. S. L. Wu, C. Y. Wu, H. Y. Lin, C. W. Kuo, S. H. Chen, C. H. Lin and S. J. Chang, "Impact of Ge content on flicker noise behavior of strained-SiGe p-type metal-oxide-semiconductor field-effect transistors", Jpn. J. Appl. Phys., Vol. 48, No. 4, Art. no. 04C036, April 2009.
  399. P. C. Huang, T. K. Kang, B. C. Wang, S. L. Wu and S. J Chang, "Study of enhanced impact ionization in strained-SiGe p-channel metal-oxide-semiconductor field-effect transistors", Jpn. J. Appl. Phys., Vol. 48, No. 4, Art. no. 04C038, April 2009.
  400. Y. S. Wang, S. J. Chang, S. T. Chou S. Y. Lin and W. Lin, "High-responsivity InGaAs/InP quantum-well infrared photodetectors prepared by metal organic chemical vapor deposition", Jpn. J. Appl. Phys., Vol. 48, No. 4, Art. no. 04C108, April 2009.
  401. C. H. Hsiao, S. J. Chang, S. B. Wang, S. P. Chang, T. C. Li, W. J. Lin, C. H. Ko, T. M. Kuan and B. R. Huang, "ZnSe nanowire photodetector prepared on oxidized silicon substrate by molecular-beam epitaxy", J. Electrochem. Soc., Vol. 156, No. 4, pp. J73-J76, April 2009.
  402. K. J. Chen, F. Y. Hung, S. J. Chang and Z. S. Hu, "Microstructures, optical and electrical properties of In-doped ZnO thin films prepared by sol-gel method", Appl. Surface Sci., Vol. 255, No. 12, pp. 6308-6312, April 2009.
  403. S. J. Young, L. W. Ji, S. J. Chang, T. H. Meen and K. J. Chen, "A ZnO-based MOSFET with a photo-CVD gate oxide", Semicond. Sci. Technol., Vol. 24, No. 3, Art. no. 035010, March 2009.
  404. C. H. Kuo, Y. K. Fu, C. L. Yeh, C. J. Tun, P. H. Chen, W. C. Lai and S. J. Chang, "Nitride-based asymmetric two-step light-emitting diode with In0.08Ga0.92N shallow step", IEEE Photon. Technol. Lett., Vol. 21, No. 6, pp. 371-373, March 2009.
  405. S. J. Chang, K. H. Lee, P. C. Chang, Y. C. Wang, C. H. Kuo and S. L. Wu, "AlGaN/GaN Schottky barrier photodetector with multi-MgxNy/GaN buffer", IEEE Sensors Journal, Vol. 9, No. 2, pp. 87-92, February 2009.
  406. H. Y. Lin, S. L. Wu, S. J. Chang, Y. P. Wang, Y. M. Lin and C. W. Kuo, "Strained-Si nMOSFET with a raised source/drain structure", Semicond. Sci. Technol., Vol. 24, No. 1, Art. no. 015015, January 2009.
  407. K. H. Lee, R. W. Chuang, P. C. Chang, S. J. Chang, Y. C. Wang, C. L. Yu, J. C. Lin and S. L. Wu, "Nitride-based MSM photodetectors with a HEMT structure and a low-temperature AlGaN intermediate layer", J. Electrochem. Soc., Vol. 155, No. 12, pp. H959-H963, December 2008.
  408. S. J. Chang, T. J. Hsueh, I. C. Chen, S. F. Hsieh, S. P. Chang, C. L. Hsu, Y. R. Lin and B. R. Huang, "Highly sensitive ZnO nanowire acetone vapor sensor with Au adsorption", IEEE Tran. Nanotechnol., Vol. 7, No. 6, pp. 754-759, November 2008.
  409. T. J. Wang, C. H. Ko, H. N. Lin, S. J. Chang, S. L. Wu, T. M. Kuan and W. C. Lee, "Investigation of metallized source/drain extension for high-performance strained NMOSFETs", IEEE Tran. Electron. Dev., Vol. 55, No. 11, pp. 3221-3226, November 2008.
  410. S. J. Chang, Y. D. Jhou, Y. C. Lin, S. L. Wu, C. H. Chen, T. C. Wen and L. W. Wu, "GaN-based MSM photodetectors prepared on patterned sapphire substrates", IEEE Photon. Technol. Lett., Vol. 20, No. 22, pp. 1866-1868, November 2008.
  411. J. J. Huang, Y. K. Su, F. S. Juang, Y. H. Liu and S. J. Chang, "Effect of the phase shift in a periodic anode on the emission spectra of top-emitting organic light-emitting diodes", IEEE Photon. Technol. Lett., Vol. 20, No. 21, pp. 1784-1786, November 2008.
  412. Y. S. Wang, S. J. Chang, Y. Z. Chiou and W. Lin, "Noise characteristics of high performance InGaAs PIN photodetectors prepared by MOCVD", J. Electrochem. Soc., Vol. 155, No. 11, pp. J307-J309, November 2008.
  413. S. J. Chang, K. H. Lee, P. C. Chang, Y. C. Wang, C. L. Yu, C. H. Kuo and S. L. Wu, "GaN-based Schottky barrier photodetectors with a 12-pair MgxNy-GaN buffer layer", IEEE J. Quan. Electron., Vol. 44, No. 10, pp. 916-921, October 2008.
  414. Y. K. Su, S. J. Chang, Y. D. Jhou, S. L. Wu and C. H. Liu, "GaN metal-semiconductor-metal photodetectors with SiN/GaN nucleation layer", IEEE Sensors Journal, Vol. 8, No. 10, pp. 1693-1697, October 2008.
  415. K. H. Lee, P. C. Chang, S. J. Chang, C. L. Yu, Y. C. Wang and S. L. Wu, "Visible-blind metal-semiconductor-metal photodetectors by capping an in situ low-temperature AlN layer", J. Electrochem. Soc., Vol. 155, No. 10, pp. J287-J289, October 2008.
  416. K. H. Lee, S. J. Chang, P. C. Chang, Y. C. Wang and C. H. Kuo, "AlGaN/GaN Schottky barrier diodes with multi-MgxNy/GaN buffer", J. Electrochem. Soc., Vol. 155, No. 10, pp. H716-H719, October 2008.
  417. H. Y. Lin, S. L. Wu, S. J. Chang, Y. P. Wang and C. W. Kuo, "Low-frequency noise of strained Si nMOSFETs fabricated on a chemical-mechanical-polished SiGe virtual substrate", Semicond. Sci. Technol., Vol. 23, No. 10, Art. no. 105022, October 2008.
  418. S. J. Chang, C. F. Shen, M. S. Hsieh, C. T. Kuo, T. K. Ko, W. S. Chen and S. C. Shei, "Nitride-based LEDs with a hybrid Al mirror + TiO2/SiO2 DBR backside reflector", IEEE/OSA J. Lightwave Technol., Vol. 26, No. 17, pp. 3131-3136, September 2008.
  419. K. H. Lee, S. J. Chang, P. C. Chang, Y. C. Wang and C. H. Kuo, "High quality GaN-based Schottky barrier diodes", Appl. Phys. Lett., Vol. 93, No. 13, Art. no. 132110, September 2008.
  420. T. J. Hsueh, S. J. Chang, C. L. Hsu, Y. R. Lin and I. C. Chen, "ZnO nanotube ethanol gas sensors", J. Electrochem. Soc., Vol. 155, No. 9, pp. K152-K155, September 2008.
  421. S. J. Young, L. W. Ji, S. J. Chang, Y. P. Chen and S. M. Peng, "ZnO Schottky diodes with iridium contact electrodes", Semicond. Sci. Technol., Vol. 23, No. 8, Art. no. 085016, August 2008.
  422. C. W. Kuo, S. L. Wu, S. J. Chang, H. Y. Lin and Y. P. Wang, "Characteristics of strained-Si nMOSFET using nickel silicide source/drain", J. Electrochem. Soc., Vol. 155, No. 8, pp. H611-H614, August 2008.
  423. C. C. Huang, R. W. Chuang, S. J. Chang, J. C. Lin, Y. C. Cheng and W. J. Lin, "MOCVD growth of InN on Si(111) with various buffer layers", J. Electron. Mater., Vol. 37, No. 8, pp. 1054-1057, August 2008.
  424. S. P. Chang, R. W. Chuang, S. J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, C. H. Kuo and H. M. Chang, "Optical and electrical characteristics of ZnO films grown on nitridated Si(100) substrate with GaN and ZnO double buffer layers", IEEE J. Sel. Top. Quan. Electron., Vol. 14, No. 4, pp. 1058-1063, July/August 2008.
  425. K. J. Chen, T. H. Fang, F. Y. Hung, L. W. Ji, S. J. Chang, S. J. Young and Y. J. Hsiao, "The crystallization and physical properties of Al-doped ZnO nanoparticles", Appl. Surface Science, Vol. 254, No. 18, pp. 5791-5795, July 2008.
  426. J. C. Lin, Y. K. Su, S. J. Chang, W. H. Lan, W. R. Chen, K. C. Huang, Y. C. Cheng and W. J. Lin, "Low dark current GaN p-i-n photodetectors with a low-temperature AlN interlayer", IEEE Photon. Technol. Lett.,, Vol. 20, No. 14, pp. 1255-1257, July 2008.
  427. C. H. Jang, J. K. Sheu, C. M. Tsai, S. C. Shei, W. C. Lai and S. J. Chang, "Effect of thickness of the p-AlGaN electron blocking layer on the improvement of ESD characteristics in GaN-Based LEDs", IEEE Photon. Technol. Lett.,, Vol. 20, No. 13, pp. 1142-1144, July 2008.
  428. S. E. Wu, T. H. Hsueh, C. P. Liu, J. K. Sheu, W. C. Lai and S. J. Chang, "Non-lithographic nanopatterning of InGaN/GaN multiple quantum well nanopillars by focused ion beams", Phys. Status Solidi C, Vol. 5, No. 6, pp. 2186-2188, June 2008.
  429. H. Hung, K. T. Lam, S. J. Chang, C. H. Chen, H. Kuan and Y. X. Sun, "InGaN/GaN multiple-quantum-well LEDs with Si-doped barriers", J. Electrochem. Soc., Vol. 155, No. 6, pp. H455-H458, June 2008.
  430. K. H. Lee, P. C. Chang, S. J. Chang, C. L. Yu, Y. C. Wang and S. L. Wu, "GaN MSM photodetectors with an unactivated Mg-doped GaN cap layer and sputtered ITO electrodes", J. Electrochem. Soc., Vol. 155, No. 6, pp. J165-J167, June 2008.
  431. K. T. Lam, P. C. Chang, S. J. Chang, C. L. Yu, Y. C. Lin, Y. X. Sun and C. H. Chen, "Nitride-based photodetectors with unactived Mg-doped cap layer", Sensors and Actuators A, Vol. 143, No. 2, pp. 191-195, May 2008.
  432. T. K. Kang, P. C. Huang, Y. H. Sa, S. L. Wu and S. J. Chang, "Investigation of impact ionization in strained-Si n-channel metal-oxide-semiconductor field-effect transistors", Jpn. J. Appl. Phys., Vol. 47, No. 4B, pp. 2664-2667, April 2008.
  433. S. E. Wu, T. H. Hsueh, C. P. Liu, J. K. Sheu, W. C. Lai and S. J. Chang, "Focused ion beam milled InGaN/GaN multiple quantum well nanopillars ", Jpn. J. Appl. Phys., Vol. 47, No. 4B, pp. 3130-3133, April 2008.
  434. J. C. Lin, Y. K. Su, S. J. Chang, W. H. Lan, K. C. Huang, W. R. Chen, C. C. Huang, W. J. Lin, Y. C. Cheng and C. M. Chang, "GaN p-i-n photodetectors with an LT-GaN interlayer", IET Optoelectron., Vol. 2, No. 2, pp. 59-62, April 2008.
  435. S. J. Chang, T. J. Hsueh, I. C. Chen and B. R. Huang, "Highly sensitive ZnO nanowire CO sensors with the adsorption of Au nanoparticles", Nanotechnol., Vol. 19, No. 9, Art. no. 175502, April 2008.
  436. C. H. Liu, K. T. Lam, T. K. Ko, S. J. Chang and Y. X. Sun, "Highly ESD-reliable, nitride-based heterostructure p-i-n photodetectors with a p-AlGaN blocking layer", J. Electrochem. Soc., Vol. 155, No. 4, pp. H232-H234, April 2008.
  437. S. J. Chang, T. J. Hsueh, C. L. Hsu, Y. R. Lin, I. C. Chen and B. R. Huang, "A ZnO nanowire vacuum pressure sensor", Nanotechnol., Vol. 19, No. 9, Art. no. 095505, March 2008.
  438. P. C. Chang, C. L. Yu, S. J. Chang and C. H. Liu, "GaN Schottky photodiodes with annealed Ir/Pt semi-transparent contacts", Thin Solid Films, Vol. 516, No. 10, pp. 3324-3327, March 2008.
  439. K. T. Lam, C. L. Yu, P. C. Chang, U. H. Liaw, S. J. Chang and J. C. Lin, "AlGaN/GaN heterostructure grown on 1o-tilt sapphire substrate by MOCVD", Superlattice Microst., Vol. 43, No. 3, pp. 147-152, March 2008.
  440. Y. D. Jhou, S. J. Chang, Y. K. Su, C. H. Chen, H. C. Lee, C. H. Liu and Y. Y. Lee, "Quaternary AlInGaN-based photodetectors", IET Optoelectron., Vol. 2, No. 1, pp. 42-45, February 2008.
  441. P. C. Chang, K. T. Lam, C. H. Chen, S. J. Chang, C. L. Yu and C. H. Liu, "AlGaN/GaN two-dimensional electron gas metal-insulator-semiconductor photodetectors with sputtered SiO2 layers", IET Optoelectron., Vol. 2, No. 1, pp. 55-57, February 2008.
  442. J. C. Lin, Y. K. Su, S. J. Chang, W. H. Lan, K. C. Huang, Y. C. Cheng and W. J. Lin, "Improved external quantum efficiency of GaN p-i-n photodiodes with a TiO2 roughened surface", IEEE Photon. Technol. Lett., Vol. 20, No. 4, pp. 285-287, February 2008.
  443. T. J. Wang, C. H. Ko, S. J. Chang, S. L. Wu, T. M. Kuan and W. C. Lee, "The effects of mechanical uniaxial stress on junction leakage in nanoscale CMOSFETs", IEEE Tran. Electron. Dev., Vol. 55, No. 2, pp. 572-577, February 2008.
  444. S. J. Chang, C. H. Lan, J. D. Hwang, Y. C. Cheng, W. J. Lin, J. C. Lin and H. Z. Chen, "Sputtered indium-tin-oxide on p-GaN", J. Electrochem. Soc., Vol. 155, No. 2, pp. H140-H143, February 2008.
  445. S. P. Chang, S. J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, C. F. Kuo, H. M. Chang and U. H. Liaw, "ZnO epitaxial layer grown on nitridated Si(100) substrate with HT-GaN/LT-ZnO double buffer", J. Crystal Growth, Vol. 310, No. 2, pp. 290-294, February 2008.
  446. L. W. Ji, S. J. Chang, T. H. Fang, S. J. Young and F. S. Juang, "MOVPE-grown ultrasmall self-organized InGaN nanotips", IEEE Tran. Nanotechnol., Vol. 7, No. 1, pp. 1-4, January 2008.
  447. J. C. Lin, Y. K. Su, S. J. Chang, W. H. Lan, W. R. Chen, Y. C. Cheng, W. J. Lin, Y. C. Tzeng, H. Y. Shin and C. M. Chang, "InN grown on GaN/sapphire templates at different temperatures by MOCVD", Optical Mater., Vol. 30, No. 4, pp. 517-520, December 2007.
  448. T. J. Hsueh, Y. W. Chen, S. J. Chang, S. F. Wang, C. L. Hsu, Y. R. Lin, T. S. Lin and I. C. Chen, "ZnO nanowire-based CO sensors prepared at various temperatures", J. Electrochem. Soc., Vol. 154, No. 12, pp. J393-J396, December 2007.
  449. T. J. Hsueh, C. L. Hsu, S. J. Chang, Y. R. Lin, S. P. Chang, Y. Z. Chiou, T. S. Lin and I. C. Chen, "Crabwise ZnO nanowire UV photodetector prepared on ZnO:Ga/glass template", IEEE Tran. Nanotechnol., Vol. 6, No. 6, pp. 595-600, November 2007.
  450. S. J. Chang, W. S. Chen, S. C. Shei, T. K. Ko, C. F. Shen, Y. P. Hsu, C. S. Chang, J. M. Tsai, W. C. Lai and A. J. Lin, "Highly reliable high-brightness GaN-based flip chip LEDs", IEEE Tran. Adv. Packaging, Vol. 30, No. 4, pp. 752-757, November 2007.
  451. P. C. Chang, C. L. Yu, S. J. Chang, K. H. Lee, C. H. Liu and S. L. Wu, "High-detectivity nitride-based MSM photodetectors on InGaN-GaN multiquantum well with the unactivated Mg-doped GaN layer", IEEE J. Quan. Electron., Vol. 43, No. 11, pp. 1060-1064, November 2007.
  452. K. T. Lam, S. L. Wu, S. J. Chang, Y. P. Wang and U. H. Liaw, "Influence of process flow on the characteristics of strained-Si nMOSFETs", Electrochem. Solid State Lett., Vol. 10, No. 11, pp. H331-H333, November 2007.
  453. R. W. Chuang, C. L. Yu, S. J. Chang, P. C. Chang, J. C. Lin and T. M. Kuan, "Crystal growth and characterization of AlGaN/GaN heterostructures prepared on vicinal-cut sapphire (0 0 0 1) substrates", J. Crystal Growth, Vol. 308, No. 2, pp. 252-257, October 2007.
  454. T. J. Hsueh, C. L. Hsu, S. J. Chang and I. C. Chen, "Laterally grown ZnO nanowire ethanol gas sensors", Sensors and Actuators B, Vol. 126, No. 2, pp. 473-477, October 2007.
  455. J. C. Lin, Y. K. Su, S. J. Chang, W. H. Lan, K. C. Huang, W. R. Chen, C. Y. Huang, W. C. Lai, W. C. Lin and Y. C. Cheng, "High responsivity of GaN p-i-n photodiode by using low-temperature interlayer", Appl. Phys. Lett., Vol. 91, No. 17, Art. no. 173502, October 2007.
  456. R. W. Chuang, S. P. Chang, S. J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, Y. C. Lin, C. F. Kuo and H. M. Chang, "Gallium nitride metal-semiconductor-metal photodetectors prepared on silicon substrates", J. Appl. Phys., Vol. 102, No. 7, Art. no. 073110, October 2007.
  457. S. P. Chang, S. J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, Y. C. Lin, C. F. Kuo and H. M. Chang, "ZnO photoconductive sensors epitaxially grown on sapphire substrates", Sensors and Actuators A, Vol. 140, No. 1, pp. 60-64, October 2007.
  458. S. J. Chang, S. C. Wei, Y. K. Su and W. C. Lai, "Nitride-based dual-stage MQW LEDs", J. Electrochem. Soc., Vol. 154, No. 10, pp. H871-H874, October 2007.
  459. P. C. Chang, C. L. Yu, S. J. Chang, Y. C. Lin and S. L. Wu, "Low-noise and high-detectivity GaN UV photodiodes with a low-temperature AlN cap layer", IEEE Sensors Journal, Vol. 7, No. 9, pp. 1289-1292, September 2007.
  460. K. T. Lam, C. L. Yu, P. C. Chang, U. H. Liaw, J. C. Lin and S. J. Chang, "Al0.22Ga0.78N/GaN HFETs prepared on vicinal-cut sapphire substrates", J. Electrochem. Soc., Vol. 154, No. 9, pp. H811-H813, September 2007.
  461. J. D. Jhou, S. J. Chang, Y. K. Su, Y. Y. Lee, C. H. Liu and H. C. Lee, "GaN Schottky barrier photodetectors with SiN/GaN nucleation layer", Appl. Phys. Lett., Vol. 91, No. 10, Art. no. 103506, September 2007.
  462. S. J. Young, L. W. Ji, S. J. Chang, T. H. Fang and T. J. Hsueh, "Nanoindentation of vertical ZnO nanowires", Physica E, Vol. 39, No. 2, pp. 240-243, September 2007.
  463. P. C. Chang, C. L. Yu, S. J. Chang, Y. C. Lin and S. L. Wu, "Low-noise and high-detectivity GaN-based UV photodiode with a semi-insulating Mg-doped GaN cap layer", IEEE Sensors Journal, Vol. 7, No. 9, pp. 1270-1273, September 2007.
  464. H. Hung, S. J. Chang, Y. C. Lin, H. Kuan and R. M. Lin, "AlGaN MSM photodetectors with recess-etched LT-AlGaN cap layers", IET Optoelectron., Vol. 1, No. 4, pp. 147-149, August 2007.
  465. S. H. Yang, C. Y. Lu and S. J. Chang, "Luminescence enhancement mechanism of ZnGa2O4 phosphor screen with an In2O3 buffer layer ", J. Electrochem. Soc., Vol. 154, No. 8, pp. J229-J233, August 2007.
  466. G. H. Yang, J. D. Hwang, C. H. Lan, C. M. Chan, H. Z. Chen and S. J. Chang, "Indium-tin-oxide metal-insulator-semiconductor GaN ultraviolet photodetectors using liquid-phase-deposition oxide", Jpn. J. Appl. Phys., Vol. 46, No. 8A, pp. 5119-5121, August 2007.
  467. T. J. Hsueh, Y. W. Chen, S. J. Chang, S. F. Wang, C. L. Hsu, Y. R. Lin, T. S. Lin and I. C. Chen, "ZnO nanowire-based CO sensors prepared on patterned ZnO:Ga/SiO2/Si templates", Sensors and Actuators B, Vol. 125, No. 2, pp. 498-503, August 2007.
  468. C. Y. Hu, S. C. Chen, J. F. Chen, S. J. Chang, M. H. Wang, V. Yeh and J. C. Chen, "Ultrathin decoupled plasma nitridation SiON gate dielectrics prepared with various RF powers", J. Vacuum Sci. Technol. B, Vol. 25, No. 4, pp. 1298-1304, July/August 2007.
  469. S. H. Yang, T. J. Hsueh and S. J. Chang, "Effect of substrate properties on luminescence of white ZnGa2O4 phosphor ", Jpn. J. Appl. Phys., Vol. 46, No. 7A, pp. 4166-4169, July 2007.
  470. C. H. Lee, S. L. Wu, S. H. Chen, C. W. Kuo, Y. M. Lin, J. F. Chen and S. J. Chang, "Negative bias temperature instability characteristics of strained SiGe pMOSFETs", Electron. Lett., Vol. 43, No. 15, pp. 835-836, July 2007.
  471. T. J. Hsueh, C. L. Hsu, S. J. Chang, P. Y. Guo, J. H. Hsieh and I. C. Chen, "Cu2O/n-ZnO nanowire solar cells on ZnO:Ga/glass templates", Scripta Materialia, Vol. 57, No. 1, pp. 53-56, July 2007.
  472. C. Y. Lu, S. P. Chang, S. J. Chang, Y. Z Chiou, C. F. Kuo, H. M. Chang C. L. Hsu and I. C. Chen, "Noise characteristics of ZnO-nanowire photodetectors prepared on ZnO:Ga/glass templates", IEEE Sensors Journal, Vol. 7, No. 7, pp. 1020-1024, July 2007.
  473. S. P. Chang, S. J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, Y. C. Lin, C. F. Kuo and H. M. Chang, "Low-frequency noise characteristics of epitaxial ZnO photoconductive sensors", J. Electrochem. Soc., Vol. 154, No. 7, pp. J209-J211, July 2007.
  474. T. J. Hsueh, S. J. Chang, C. L. Hsu, Y. R. Lin and I. C. Chen, "Highly sensitive ZnO nanowire ethanol sensor with Pd adsorption", Appl. Phys. Lett., Vol. 91, No. 5, Art. no. 053111, July 2007.
  475. S. J. Chang, C. F. Shen, W. S. Chen, C. T. Kuo, T. K. Ko, S. C. Shei and J. K. Sheu, "Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography", Appl. Phys. Lett., Vol. 91, No. 1, Art. no. 013504, July 2007.
  476. C. H. Kuo, S. J. Chang and H. Kuan, "GaN-based indium-tin-oxide light emitting diodes with nanostructured silicon upper contacts", IET Optoelectron., Vol. 1, No. 3, pp. 110-112, June 2007.
  477. S. J. Young, L. W. Ji, S. J. Chang, Y. P. Chen, K. T. Lam, S. H. Liang, X. L. Du, Q. K. Xie and Y. S. Sun, "ZnO metal-semiconductor-metal ultraviolet photodetectors with iridium contact electrodes", IET Optoelectron., Vol. 1, No. 3, pp. 135-139, June 2007.
  478. J. J. Horng, Y. K. Su, S. J. Chang, W. S. Chen and S. C. Shei, "GaN-based power LEDs with CMOS ESD protection circuits", IEEE Tran. Dev. Mater. Reliability, Vol. 7, No. 2, pp. 340-346, June 2007.
  479. C. H. Liu, S. J. Chang, K. T. Lam and Y. S. Sun, "SiGe doped-channel field-effect transistor", Mater. Chem. Phys., Vol. 103, No. 2-3, pp. 222-224, June 2007.
  480. C. L. Yu, P. C. Chang, S. J. Chang and S. L. Wu, "High-detectivity GaN MSM photodetectors with low-temperature GaN cap layers and Ir/Pt contact electrodes", Electrochem. Solid State Lett., Vol. 10, No. 6, pp. H171-H174, June 2007.
  481. S. J. Chang, C. F. Shen, W. S. Chen, T. K. Ko, C. T. Kuo, K. H. Yu, S. C. Shei and Y. Z. Chiou, "Nitride-based LEDs with an insulating SiO2 layer underneath p-pad electrodes", Electrochem. Solid State Lett., Vol. 10, No. 6, pp. H175-H177, June 2007.
  482. S. J. Chang, C. L. Yu, P. C. Chang and Y. C. Lin, "GaN ultraviolet photodetector with a low-temperature AlN cap layer", Electrochem. Solid State Lett., Vol. 10, No. 6, pp. H196-H198, June 2007.
  483. S. J. Young, L. W. Ji, S. J. Chang, T. H. Fang, T. J. Hsueh, T. H. Meen and I. C. Chen, "Nanoscale mechanical characteristics of vertical ZnO nanowires grown on ZnO:Ga/glass templates", Nanotechnol., Vol. 18, No. 22, Art. no. 225603, June 2007.
  484. C. L. Yu, R. W. Chuang, S. J. Chang, P. C. Chang, K. H. Lee and J. C. Lin, "InGaN-GaN MQW metal-semiconductor-metal photodiodes with semi-insulating Mg-doped GaN cap layers", IEEE Photon. Technol. Lett., Vol. 19, No. 11, pp. 846-848, June 2007.
  485. J. J. Horng, Y. K. Su, S. J. Chang, T. K. Ko and S. C. Shei, "Nitride-based Schottky barrier sensor module with high electrostatic discharge reliability", IEEE Photon. Technol. Lett., Vol. 19, No. 10, pp. 717-719, May 2007.
  486. C. F. Shen, S. J. Chang, W. S. Chen, T. K. Ko, C. T. Kuo and S. C. Shei, "Nitride-based high-power flip-chip LED with double-side patterned sapphire substrate", IEEE Photon. Technol. Lett., Vol. 19, No. 10, pp. 780-782, May 2007.
  487. C. H. Lin, S. L. Wu, C. Y. Wu, T. K. Kang, K. C. Huang and S. J. Chang, "Impact of SiN on performance in novel complementary metal-oxide-semiconductor architecture using substrate strained-SiGe and mechanical strained-Si technology", Jpn. J. Appl. Phys., Vol. 46, No. 5A, pp. 2882-2886, May 2007.
  488. P. C. Chang, C. L. Yu, C. H. Liu, S. J. Chang, Y. K. Su, R. W. Chuang and Y. J. Chiou, "Ir/Pt Schottky contact oxidation for nitride-based Schottky barrier diodes", Phys. Status Solidi C, Vol. 4, No. 5, pp. 1625-1628, May 2007.
  489. H. Hung, K. T. Lam, S. J. Chang, H. Kuan, C. H. Chen and U. H. Liaw, "Effects of thermal annealing on In-induced metastable defects in InGaN films", Mater. Sci. Semicond. Processing, Vol. 10, No. 2-3, pp. 112-116, April-June 2007.
  490. S. J. Chang, H. Hung, Y. C. Lin, M. H. Wu, H. Kuan and R. M. Lin, "AlGaN ultraviolet metal-semiconductor-metal photodetectors with low-temperature-grown cap layers", Jpn. J. Appl. Phys., Vol. 46, No. 4B, pp. 2471-2473, April 2007.
  491. S. J. Chang, T. K. Ko, J. K. Sheu, S. C. Shei, W. C. Lai, Y. Z. Chiou, Y. C. Lin, C. S. Chang, W. S. Chen and C. F. Shen, "AlGaN ultraviolet metal-semiconductor-metal photodetectors grown on Si substrates", Sensors and Actuators A, Vol. 135, No. 2, pp. 502-506, April 2007.
  492. S. J. Young, L. W. Ji, S. J. Chang, S. H. Liang, K. T. Lam, T. H. Fang, K. J. Chen, X. L. Du and Q. K. Xue, "ZnO-based MIS photodetectors", Sensors and Actuators A, Vol. 135, No. 2, pp. 529-533, April 2007.
  493. C. L. Yu, P. C. Chang, S. J. Chang and S. L. Wu, "High-detectivity GaN MSM photodetectors with low-temperature GaN cap layers and Ir/Pt contact electrodes", Electrochem. Solid State Lett., Vol. 10, No. 6, pp. H171-H174, March 2007.
  494. Y. P. Hsu, S. J. Chang, W. S. Chen, J. K. Sheu, J. Y. Chu and C. T. Kuo, "Crack-free high-brightness InGaN/GaN LEDs on Si(111) with initial AlGaN buffer and two LT-Al interlayers", J. Electrochem. Soc., Vol. 154, No. 3, pp. H191-H193, March 2007.
  495. T. J. Hsueh, C. L. Hsu, S. J. Chang, Y. R. Lin, T. S. Lin and I. C. Chen, "Growth and characterization of sparsely dispersed ZnO nanowires", J. Electrochem. Soc., Vol. 154, No. 3, pp. H153-H156, March 2007.
  496. T. J. Hsueh, C. L. Hsu, S. J. Chang, C. Y. Lu, Y. R. Lin and I. C. Chen, "Crabwise ZnO nanowires: growth and field emission properties", J. Nanosci. Nanotechnol., Vol. 7, No. 3, pp. 1076-1079, March 2007.
  497. J. C. Lin, Y. K. Su, S. J. Chang, W. H. Lan, K. C. Huang, W. R. Chen, Y. C. Cheng and W. J. Lin, "GaN-based light-emitting diodes prepared on vicinal sapphire substrates", IET Optoelectron., Vol. 1, No. 1, pp. 23-26, February 2007.
  498. C. F. Shen, S. J. Chang, T. K. Ko, S. C. Shei, W. C. Lai, C. S. Chang, W. S. Chen, S. P. Huang, Y. W. Ku and R. H. Horng, "Nitride-based high power flip-chip near-UV LEDs with reflective submount", IET Optoelectron., Vol. 1, No. 1, pp. 27-30, February 2007.
  499. S. J. Chang, T. K. Lin, Y. Z. Chiou, B. R. Huang, S. P. Chang, C. M. Chang, Y. C. Lin and C. C. Wong, "ZnSe based white light emitting diode on homoepitaxial ZnSe substrate", IET Optoelectron., Vol. 1, No. 1, pp. 39-41, February 2007.
  500. T. J. Wang, H. W. Chen, P. C. Yeh, C. H. Ko, S. J. Chang, J. Yeh, S. L. Wu, C. Y. Lee, W. C. Lee and D. D. Tang, "Effects of mechanical uniaxial stress on SiGe HBT characteristics", J. Electrochem. Soc., Vol. 154, No. 2, pp. H105-H108, February 2007.
  501. C. H. Liu, K. T. Lam, S. J. Chang, C. K. Wang and Y. S. Sun, "Flicker noise of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor with a photo-CVD SiO2 Layer", J. Electrochem. Soc., Vol. 154, No. 2, pp. H119-H123, February 2007.
  502. C. L. Yu, C. H. Chen, S. J. Chang and P. C. Chang, "GaN metal-semiconductor-metal ultraviolet photodetectors with Ir/Pt contact electrodes", J. Electrochem. Soc., Vol. 154, No. 2, pp. J71-J72, February 2007.
  503. T. K. Lin, K. T. Lam, S. J. Chang, Y. Z. Chiou and S. P. Chang, "Ni/Au contacts on homoepitaxial p-ZnSe with surface oxygen plasma treatments", J. Vac. Sci. Technol. B, Vol. 25, No. 1, pp. 213-216, January/February 2007.
  504. H. Hung, C. H. Chen, S. J. Chang, H. Kuan, R. M. Lin and C. H. Liu, "Kinetics of persistent photoconductivity in InGaN epitaxial films grown by MOCVD", J. Crystal Growth, Vol. 298, No. 1, pp. 246-250, January 2007.
  505. M. L. Tu, Y. K. Su, S. J. Chang and R. W. Chuang, "GaN UV photodetector by using transparency antimony-doped tin oxide electrode", J. Crystal Growth, Vol. 298, No. 1, pp. 744-747, January 2007.
  506. Y. P. Wang, S. L. Wu and S. J. Chang, "Tradeoff between short channel effect and mobility in strained-Si nMOSFETs", Semicond. Sci. Technol., Vol. 22, No. 1, pp. S50-S54, January 2007.
  507. C. H. Lin, Y. K. Su, Y. Z. Juang, C. F. Chiou, S. J. Chang, J. F. Chen and C. H. Tu, "The optimized geometry of the SiGe HBT power cell for 802.11a WLAN applications", IEEE Microwave Wireless Components Lett., Vol. 17, No. 1, pp. 49-51, January 2007.
  508. W. C. Lai, K. T. Lam, C. H. Liu and S. J. Chang, "InGaN/GaN MQW structures prepared with various In and Ga flow rates", International J. Electron., Vol. 94, No. 1, pp. 1-7, January 2007.
  509. Y. P. Wang, S. L. Wu and S. J. Chang, "Low-frequency noise characteristics in strained-Si nMOSFETs", IEEE Electron. Dev. Lett., Vol. 28, No. 1, pp. 36-38, January 2007.
  510. S. J. Young, L. W. Ji, T. H. Fang, S. J. Chang and X. L. Du, "ZnO ultraviolet photodiodes with Pd contact electrodes", Acta Materialia, Vol. 55, No. 1, pp. 329-333, January 2007.
  511. S. J. Young, L. W. Ji, S. J. Chang and X. L. Du, "ZnO metal-semiconductor- metal ultraviolet photodiodes with Au contacts", J. Electrochem. Soc., Vol. 154, No. 1, pp. H26-H29, January 2007.
  512. L. T. Chen, C. S. Hwang, I. G. Chen and S. J. Chang, "Chromaticity of inhomogeneous broadening effect on CaxSr1-xAl2O4:Eu2+ phosphors", J. Alloys and Compounds, Vol. 426, No. 1-2, pp. 395-399, December 2006.
  513. C. F. Shen, S. J. Chang, T. K. Ko, C. T. Kuo, S. C. Shei, W. S. Chen, C. T. Lee, C. S. Chang and Y. Z. Chiou, "Nitride-based light emitting diodes with textured sidewalls and pillar waveguides", IEEE Photon. Technol. Lett., Vol. 18, No. 23, pp. 2517-2519, December 2006.
  514. S. C. Hung, Y. K. Su, S. J. Chang and Y. H. Chen, "Vertically aligned GaN nanotubes - Fabrication and current image analysis", Microelectron. Eng., Vol. 83, No. 11-12, pp. 2441-2445, November-December 2006.
  515. C. L. Yu, S. J. Chang, P. C. Chang, Y. C. Lin and C. T. Lee, "Nitride-based ultraviolet Schottky barrier photodetectors with LT-AlN cap layers", Superlattice Microst., Vol. 40, No. 4-6, pp. 470-475, October-December 2006.
  516. C. Y. Lu, S. J. Chang, S. P. Chang, C. T. Lee, C. F. Kuo, H. M. Chang Y. Z. Chiou, C. L. Hsu and I. C. Chen, "Ultraviolet photodetectors with ZnO nanowires prepared on ZnO:Ga/glass templates", Appl. Phys. Lett., Vol. 89, No. 15, Art. no. 153101, October 2006.
  517. S. J. Chang, C. L. Yu, R. W. Chuang, P. C. Chang, Y. C. Lin, Y. W. Jhan and C. H. Chen, "Nitride-based MIS-like photodiodes with semiinsulating Mg-doped GaN cap layers", IEEE Sensors Journal, Vol. 6, No. 5, pp. 1043-1044, October 2006.
  518. S. J. Young, L. W. Ji, R. W. Chuang, S. J. Chang and X. L. Du, "Characterization of ZnO metal-semiconductor-metal ultraviolet photodiodes with palladium contact electrodes", Semicond. Sci. Technol., Vol. 21, No. 10, pp. 1507-1511, October 2006.
  519. S. J. Chang, C. L. Yu, P. C. Chang, Y. C. Lin and C. H. Chen, "Nitride-based MIS-like diodes with semi-insulating Mg-doped GaN cap layers", Semicond. Sci. Technol., Vol. 21, No. 10, pp. 1422-1424, October 2006.
  520. S. C. Hung, Y. K. Su, T. H. Fang and S. J. Chang, "Shell buckling behavior investigation of individual gallium nitride hollow nanocolumn", Appl. Phys. A, Vol. 84, No. 4, pp. 439-443, September 2006.
  521. S. J. Chang, C. F. Shen, S. C. Shei, R. W. Chuang, C. S. Chang, W. S. Chen, T. K. Ko and J. K. Sheu, "Highly reliable nitride-based LEDs with internal ESD protection diodes", IEEE Tran. Dev. Mater. Reliability, Vol. 6, No. 3, pp. 442-447, September 2006.
  522. T. K. Ko, S. C. Shei, S. J. Chang, Y. Z. Chiou, R. M. Lin, W. S. Chen, C. F. Shen, C. S. Chang and K. W. Lin, "InGaN p-i-n ultraviolet - A band-pass photodetectors", IEE Proc. - Optoelectron., Vol. 153, No. 4, pp. 212-214, August 2006.
  523. T. K. Ko, S. J. Chang, J. K. Sheu, S. C. Shei, Y. Z. Chiou, M. L. Lee, C. F. Shen, S. P. Chang and K. W. Lin, "AlGaN/GaN Schottky-barrier UV-B bandpass photodetectors with ITO contacts and LT-GaN cap layers", Semicond. Sci. Technol., Vol. 21, No. 8, pp. 1064-1068, August 2006.
  524. T. K. Ko, S. J. Chang, Y. K. Su, Y. Z. Chiou, S. C. Shei, J. K. Sheu, W. C. Lai, Y. C. Lin, W. S. Chen and C. F. Shen, "Nitride-based flip-chip p-i-n photodiodes", IEEE Tran. Adv. Packaging, Vol. 29, No. 3, pp. 483-487, August 2006.
  525. S. J. Chang, W. S. Chen, Y. C. Lin, C. S. Chang, T. K. Ko, Y. P. Hsu, C. F. Shen, J. M. Tsai and S. C. Shei, "Nitride-based flip-chip LEDs with transparent ohmic contacts and reflective mirrors", IEEE Tran. Adv. Packaging, Vol. 29, No. 3, pp. 403-408, August 2006.
  526. T. K. Ko, S. C. Shei, S. J. Chang, Y. K. Su, Y. Z. Chiou, Y. C. Lin, C. S. Chang, W. S. Chen, C. K. Wang, J. K. Sheu and W. C. Lai, "Flip-chip p(GaN)-i(GaN)-n(AlGaN) narrowband UV-A photosensors", IEEE Sensors Journal, Vol. 6, No. 4, pp. 964-969, August 2006.
  527. S. J. Chang, T. K. Lin, Y. K. Su, Y. Z. Chiou, C. K. Wang, S. P. Chang, C. M. Chang, J. J. Tang and B. R. Huang, "ITO/homoepitaxial ZnSe/ITO MSM sensors with thermal annealing", IEEE Sensors Journal, Vol. 6, No. 4, pp. 945-949, August 2006.
  528. S. J. Chang, H. S. Hou and Y. K. Su, "Automated synthesis of passive filter circuits including parasitic effects by genetic programming", Microelectron. Journal, Vol. 37, No. 8, pp. 792-799, August 2006.
  529. S. J. Young, L. W. Ji, S. J. Chang and Y. K. Su, "ZnO metal-semiconductor-metal ultraviolet sensors with various contact electrodes", J. Crystal Growth, Vol. 293, No. 1, pp. 43-47, July 2006.
  530. T. K. Lin, S. J. Chang, B. R. Huang, K. T. Lam, Y. S. Sun, M. Fujita and Y. Horikoshi, "Transparent RuOx contacts on n-ZnO", J. Electrochem. Soc., Vol. 153, No. 7, pp. G677-G680, July 2006.
  531. C. H. Kuo, S. J. Chang, G. C. Chi, K. T. Lam and Y. S. Sun, "Nitride-based light emitting diodes with quaternary p-AlInGaN surface layers", Phys. Status Solidi C, Vol. 3, No. 6, pp. 2153-2155, June 2006.
  532. C. M. Tsai, J. K. Sheu, P. T. Wang, S. C. Shei, S. J. Chang, C. H. Kuo, C. W. Kuo and Y. K. Su, "High efficiency and improved ESD characteristics of GaN-based LEDs with naturally textured surface grown by MOCVD", IEEE Photon. Technol. Lett., Vol. 18, No. 11, pp. 1213-1215, June 2006.
  533. T. J. Hsueh, S. J. Chang, Y. R. Lin, S. Y. Tsai, I. C. Chen and C. L. Hsu, "A novel method for the formation of ladder-like ZnO nanowires", Crystal Growth & Design, Vol. 6, No. 6, pp. 1282-1284, June 2006.
  534. L. T. Chen, I. L. Sun, C. S. Hwang and S. J. Chang, "Luminescence properties of BAM phosphor synthesized by TEA coprecipitation method", J. Luminescence, Vol. 118, No. 2, pp. 293-300, June 2006.
  535. S. L. Wu, C. H. Lee, S. J. Chang and Y. M. Lin, "Inductively coupled plasma etching of Si1–xGex in CF4/Ar and Cl2/Ar discharges", J. Vac. Sci. Technol. A, Vol. 24, No. 3, pp. 728-731, May/June 2006.
  536. Y. K. Su, S. H. Hsu, R. W. Chuang, S. J. Chang and W. C. Chen, "GaInNAs metal-semiconductor-metal near-infrared photodetectors", IEE Proc. - Optoelectron., Vol. 153, No. 3, pp. 128-130, June 2006.
  537. S. J. Chang, C. L. Yu, C. H. Chen, P. C. Chang, and K. C. Huang, "Nitride-based ultraviolet metal-semiconductor-metal photodetectors with low-temperature GaN cap layers and Ir/Pt contact electrodes", J. Vac. Sci. Technol. A, Vol. 24, No. 3, pp. 637-640, May/June 2006.
  538. T. K. Lin, S. J. Chang, Y. Z. Chiou, C. K. Wang, S. P. Chang, K. T. Lam, Y. S. Sun and B. R. Huang, "Homoepitaxial ZnSe MIS photodetectors with SiO2 and BST insulator layers", Solid State Electron., Vol. 50, No. 5, pp. 750-753, May 2006.
  539. K. T. Liu, Y. K. Su, R. W. Chuang, S. J. Chang and Y. Horikoshi, "Electrical and surface composition properties of phosphorus implantation in Mg-doped GaN", Microelectron. Journal, Vol. 37, No. 5, pp. 417-420, May 2006.
  540. Y. M. Lin, S. L. Wu, S. J. Chang, P. S. Chen and C. W. Liu, "Hole confinement and 1/f noise characteristics of SiGe double-quantum-well p-type metal-oxide-semiconductor field-effect transistors ", Jpn. J. Appl. Phys., Vol. 45, No. 5A, pp. 4006-4008, May 2006.
  541. C. W. Huang, S. J. Chang, W. Wu, C. L. Wu and C. S. Chang, "A Ku band four-stage PHEMT 1W MMIC power amplifier", Microelectron. Journal, Vol. 37, No. 5, pp. 428-432, May 2006.
  542. Y. K. Su, W. C. Chen, S. H. Hsu, J. D. Wu, S. J. Chang, R. W. Chuang and W. R. Chen, "Improvement in linearity of novel InGaAsN-based high electron mobility transistors", Jpn. J. Appl. Phys., Vol. 45, No. 4B, pp. 3372-3375, April 2006.
  543. Y. Z. Chiou, Y. K. Su, J. Gong, S. J. Chang and C. K. Wang, "Noise analysis of nitride-based metal oxide-semiconductor heterostructure field effect transistors with photo-chemical vapor deposition SiO2 gate oxide in the linear and saturation regions", Jpn. J. Appl. Phys., Vol. 45, No. 4B, pp. 3405-3409, April 2006.
  544. S. H. Hsu, W. R. Chen, Y. K. Su, R. W. Chuang, S. J. Chang and W. C. Chen, "Effects of nitrogen incorporation on the electronic properties of GaxIn1-xNyAs1-y epilayers probed by persistent photoconductivity", J. Crystal Growth, Vol. 290, No. 1, pp. 87-90, April 2006.
  545. S. J. Chang, T. K. Ko, Y. K. Su, Y. Z. Chiou, C. S. Chang, S. C. Shei, J. K. Sheu, W. C. Lai, Y. C. Lin, W. S. Chen and C. F. Shen, "GaN-based p-i-n sensors with ITO contacts", IEEE Sensors Journal, Vol. 6, No. 2, pp. 406-411, April 2006.
  546. C. L. Hsu, Y. R. Lin, S. J. Chang, T. H. Lu, T. S. Lin, S. Y. Tsai and I. C. Chen, "Influence of the formation of the second phase in ZnO/Ga nanowire systems", J. Electrochem. Soc., Vol. 153, No. 4, pp. G333-G336, April 2005.
  547. Y. D. Jhou, C. H. Chen, S. J. Chang, Y. K. Su, P. C. Chang, P. C. Chen, H. Hung, C. L. Yu, S. M. Wang and M. H. Wu, "High UV/visible rejection contrast AlGaN/GaN MIS photodetectors", Microelectron. Journal, Vol. 37, No. 4, pp. 328-331, April 2006.
  548. P. C. Chang, C. H. Chen, S. J. Chang, Y. K. Su, C. L. Yu, B. R. Huang and P. C. Chen, "High UV/visible rejection contrast AlGaN/GaN MIS photodetectors", Thin Solid Films, Vol. 498, No. 1-2, pp. 133-136, March 2006.
  549. P. C. Chen, C. H. Chen, S. J. Chang, Y. K. Su, P. C. Chang and B. R. Huang, "High hole concentration of p-type InGaN epitaxial layers grown by MOCVD", Thin Solid Films, Vol. 498, No. 1-2, pp. 113-117, March 2006.
  550. Y. K. Su, S. H. Hsu, C. C. Sio, W. C. Chen and S. J. Chang, "DC and 1/f noise characteristics of InGaP/InGaAsN/GaAs double heterojunction bipolar transistors", Semicond. Sci. Technol., Vol. 21, No. 2, pp. 167-170, February 2006.
  551. J. D. Hwang, G. H. Yang, C. C. Lin and S. J. Chang, "Nonalloyed Ti/indium tin oxide and Ti ohmic contacts to n-type GaN using plasma pre-treatment", Solid State Electron., Vol. 50, No. 2, pp. 297-299, February 2006.
  552. K. S. Ramaiah, Y. K. Su, S. J. Chang and C. H. Chen, "A comparative study of blue, green and yellow light emitting diode structures grown by metal organic chemical vapor deposition", Solid State Electron., Vol. 50, No. 2, pp. 119-124, February 2006.
  553. S. H. Hsu, Y. K. Su, S. J. Chang, W. C. Chen and H. L. Tsai, "InGaAsN metal-semiconductor-metal photodetectors with modulation-doped heterostructures", IEEE Photon. Technol. Lett., Vol. 18, No. 3, pp. 547-579, February 2006.
  554. S. J. Chang, H. S. Hou and Y. K. Su, "Automated passive filter synthesis using a novel tree representation and genetic programming", IEEE Tran. Evolutionary Computation, Vol. 10, No. 1, pp. 93-100, February 2006.
  555. Y. K. Su, H. S. Hou and S. J. Chang, "Practical impedance matching using genetic programming", Microwave Optical Technol. Lett., Vol. 48, No. 2, pp. 375-377, February 2006.
  556. C. H. Liu, T. K. Lin, S. J. Chang, Y. K. Su, Y. Z. Chiou, C. K. Wang, S. P. Chang, J. J. Tang and B. R. Huang, "Photo-assisted thermally oxidized GaAs insulator layers deposited by photo-CVD", Surface & Coatings Technol., Vol. 200, No. 10, pp. 3250-3253, February 2006.
  557. M. C. Wei, S. J. Chang, C. Y. Tsai, C. H. Liu and S. C. Chen, "SiNx deposited by in-line PECVD for multi-crystalline silicon solar cells", Solar Energy, Vol. 80, No. 2, pp. 215-219, February 2006.
  558. S. J. Chang, T. K. Lin, Y. K. Su, Y. Z. Chiou, C. K. Wang, S. P. Chang, C. M. Chang, J. J. Tang and B. R. Huang, "Homoepitaxial ZnSe MSM photodetectors with various transparent electrodes", Mater. Sci. Eng. B, Vol. 127, No. 2-3, pp. 164-168, February 2006.
  559. C. K. Wang, S. J. Chang, Y. K. Su, Y. Z. Chiou, T. K. Lin, C. C. Wong, H. L. Liu, S. P. Chang and J. J. Tang, "Room temperature photo-CVD SiO2 layers on AlGaN and AlGaN/GaN MOS-HFTEs", Phys. Status Solidi A, Vol. 203, No. 2, pp. 404-409, February 2006.
  560. C. L. Hsu, S. J. Chang, Y. R. Lin, J. M. Wu, T. S. Lin, S. Y. Tsai and I. C. Chen, "Indium-diffused ZnO nanowires synthesized on ITO-buffered Si substrate", Nanotechnol., Vol. 17, No. 2, pp. 516-519, January 2006.
  561. S. H. Yang, T. J. Hsueh and S. J. Chang, "Effect of ZnO buffer layer on the cathodoluminescence of ZnGa2O4/ZnO phosphor screen for FED", J. Crystal Growth, Vol. 287, No. 1, pp. 194-198, January 2006.
  562. S. L. Wu, Y. P. Wang and S. J. Chang, "Controlled misfit dislocation technology in strained silicon MOSFETs", Semicond. Sci. Technol., Vol. 21, No. 1, pp. 44-47, January 2006.
  563. W. S. Chen, S. C. Shei, S. J. Chang, Y. K. Su, W. C. Lai, C. H. Kuo, Y. C. Lin, C. S. Chang, T. K. Ko, Y. P. Hsu and C. F. Shen, "Rapid thermal annealed InGaN/GaN flip-chip LEDs", IEEE Tran. Electron. Dev., Vol. 53, No. 1, pp. 32-37, January 2006.
  564. C. K. Wang, S. J. Chang, Y. K. Su, Y. Z. Chiou, S. C. Chen, C. S. Chang, T. K. Lin, H. L. Liu and J. J. Tang, "GaN MSM UV photodetectors with titanium tungsten transparent electrodes", IEEE Tran. Electron. Dev., Vol. 53, No. 1, pp. 38-42, January 2006.
  565. S. L. Wu, Y. M. Lin, S. J. Chang, S. C. Lu, P. S. Chen and C. W. Liu, "Enhanced CMOS performances using substrate strained-SiGe and mechanical strained-Si technology ", IEEE Electron. Dev. Lett., Vol. 27, No. 1, pp. 46-48, January 2006.
  566. H. C. Yu, J. S. Wang, Y. K. Su, S. J. Chang, F. I. Lai, Y. H. Chang, H. C. Kuo, C. P. Sung, H. P. D. Yang, K. F. Lin, J. M. Wang, J. Y. Chi, R. S. Hsiao and S. Mikhrin, "1.3-mm InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE", IEEE Photon. Technol. Lett., Vol. 18, No. 2, pp. 418-420, January 2006.
  567. S. C. Hung, Y. K. Su, S. J. Chang, L. W. Ji, D. S. Shen and C. H. Huang, "InGaN/GaN MQD p-n junction photodiodes", Physica E, Vol. 30, No. 1-2, pp. 13-16, December 2005.
  568. H. S. Hou, S. J. Chang and Y. K. Su, "Tolerance design of passive filter circuits using genetic programming", IEICE Tran. Electron., Vol. E88C, No. 12, pp. 2388-2390, December 2005.
  569. C. H. Kuo, S. J. Chang and S. C. Chen, "Nitride-based LEDs with ITO on nanostructured silicon contact layers", J. Crystal Growth, Vol. 258, No. 3, pp. 295-299, December 2005.
  570. J. C. Lin, Y. K. Su, S. J. Chang, W. R. Chen, R. Y. Chen, Y. C. Cheng and W. J. Lin, "Activation energy of n-GaN epitaxial layers grown on vicinal-cut sapphire substrates", J. Crystal Growth, Vol. 258, No. 4, pp. 481-485, December 2005.
  571. Y. K. Su, S. J. Chang, S. C. Wei, R. W. Chuang, S. M. Chen and W. L. Li, "Nitride-based LEDs with n--GaN current spreading Layers", IEEE Electron. Dev. Lett., Vol. 26, No. 12, pp. 891-893, December 2005.
  572. C. L. Hsu, S. J. Chang, H. C. Hung, Y. R. Lin, C. J. Huang, Y. K. Tseng and I. C. Chen, "Vertical single-crystal ZnO nanowires grown on ZnO:Ga/glass templates", IEEE Tran. Nanotechnol., Vol. 4, No. 6, pp. 649-654, December 2005.
  573. Y. P. Wang, S. L. Wu and S. J. Chang, "Investigation of transport mechanism for strained Si n metal-oxide-semiconductor field-effect transistor grown on multi-layer substrate", Jpn. J. Appl. Phys. Lett., Vol. 44, No. 51, pp. L1560-L1562, December 2005.
  574. C. L. Hsu, S. J. Chang, H. C. Hung, Y. R. Lin, T. H. Lu, Y. K. Tseng and I. C. Chen, "Selective growth of vertical ZnO nanowires on ZnO:Ga/Si3N4/SiO2/Si templates", J. Vac. Sci. Technol. B, Vol. 23, No. 6, pp. 2292-2296, November-December 2005.
  575. L. W. Ji, T. H. Fang, S. C. Hung, Y. K. Su, S. J. Chang and R. W. Chuang, "Ultra small self-organized nitride nanotips", J. Vaccum Sci. Technol. B, Vol. 23, No. 6, pp. 2496-2498, November-December 2005.
  576. C. L. Hsu, S. J. Chang, Y. R. Lin, P. C. Li, T. S. Lin, S. Y. Tsai, T. H. Lu and I. C. Chen, "Ultraviolet photodetectors with low temperature synthesized vertical ZnO nanowires", Chem. Phys. Lett., Vol. 416, No. 1-3, pp. 75-78, November 2005.
  577. S. H. Yang, T. J. Hsueh and S. J. Chang, "Cathodoluminescence of a white ZnGa2O4/ZnO phosphor screen", J. Electrochem. Soc., Vol. 152, No. 11, pp. H191-H195, November 2005.
  578. K. T. Liu, Y. K. Su, S. J. Chang and Y. Horikoshi, "Magnesium/nitrogen and beryllium/nitrogen co-implantation into GaN", J. Appl. Phys., Vol. 98, No. 7, Art. no. 073702, October 2005.
  579. C. K. Wang, T. K. Ko, C. S. Chang, S. J. Chang, Y. K. Su, T. C. Wen, C. H. Kuo and Y. Z. Chiou, "The thickness effect of p-AlGaN blocking layer in UV-A bandpass photodetectors", IEEE Photon. Technol. Lett., Vol. 17, No. 10, pp. 2161-2163, October 2005.
  580. S. C. Hung, Y. K. Su, T. H. Fang, S. J. Chang and L. W. Ji, "Buckling instabilities in GaN nanotubes under uniaxial compression", Nanotechnol., Vol. 16, No. 10, pp. 2203-2208, October 2005.
  581. C. H. Kuo, C. C. Lin, S. J. Chang, Y. P. Hsu, J. M. Tsai, W. C. Lai and P. T. Wang, "Nitride-based light-emitting diodes with p-AlInGaN surface layers", IEEE Tran. Electron. Dev., Vol. 52, No. 10, pp. 2346-2349, October 2005.
  582. J. L. Yang, J. S. Chen and S. J. Chang, "Presence of nanosize Au dots on the formation of ohmic contact for the Ni-Au base film to p-GaN", J. Vac. Sci. Technol. B, Vol. 23, No. 5, pp. 2127-2131, September-October 2005.
  583. Y. P. Wang, S. L. Wu and S. J. Chang, "Optimized Si-cap layer thickness for tensile-strained-Si/compressively strained SiGe dual-channel transistors in 0.13 mm complementary metal oxide semiconductor technology", Jpn. J. Appl. Phys. Lett., Vol. 44, No. 37-41, pp. L1248-L1251, September 2005.
  584. Y. T. Nien, Y. L. Chen, I. G. Chen, C. S. Hwang, Y. K. Su, S. J. Chang and F. S. Juang, "Synthesis of nano-scaled yttrium aluminum garnet phosphor by co-precipitation method with HMDS treatment", Mater. Chem. Phys., Vol. 93, No. 1, pp. 79-83, September 2005.
  585. T. K. Ko, S. J. Chang, Y. K. Su, M. L. Lee, C. S. Chang, Y. C. Lin, S. C. Shei, J. K. Sheu, W. S. Chen and C. F. Shen, "AlGaN-GaN Schottky-barrier photodetectors with LT GaN cap layers", J. Crystal Growth, Vol. 283, No. 1-2, pp. 68-71, September 2005.
  586. S. J. Chang, S. C. Wei, Y. K. Su, R. W. Chuang, S. M. Chen and Li, "Nitride-based LEDs with MQW active regions grown by different temperature profiles", IEEE Photon. Technol. Lett., Vol. 17, No. 9, pp. 1806-1808, September 2005.
  587. Y. P. Hsu, S. J. Chang, Y. K. Su, S. C. Chen, J. M. Tsai, W. C. Lai, C. H. Kuo and C. S. Chang, "InGaN-GaN MQW LEDs with Si treatment", IEEE Photon. Technol. Lett., Vol. 17, No. 8, pp. 1620-1622, August 2005.
  588. T. K. Lin, S. J. Chang, Y. K. Su, B. R. Huang, M. Fujita and Y. Horikoshi, "ZnO MSM photodetectors with Ru contact electrodes", J. Crystal Growth, Vol. 281, No. 2-4, pp. 513-517, August 2005.
  589. C. I. Lee, Y. T. Lu, Y. K. Su, S. J. Chang, J. S. Hwang and C. C. Chang, "Optical transitions in a self-assembled Ge quantum dot/Si-superlattice measured by photoreflectance spectroscopy", Jpn. J. Appl. Phys., Vol. 44, No. 33-36, pp. L1045-L-1047, August 2005.
  590. Y. D. Jhou, C. H. Chen, R. W. Chuang, S. J. Chang, Y. K. Su, P. C. Chang, P. C. Chen, H. Hung, S. M. Wang and C. L. Yu, "Nitride-based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structures", Solid State Electron., Vol. 49, No. 8, pp. 1347-1351, August 2005.
  591. K. T. Liu, Y. K. Su, R. W. Chuang, S. J. Chang and Y. Horikoshi, "C and N co-implantation in Be-doped GaN", Semicond. Sci. Technol., Vol. 20, No. 8, pp. 740-744, August 2005.
  592. C. L. Hsu, Y. R. Lin, S. J. Chang, T. S. Lin, S. Y. Tsai and I. C. Chen, "Vertical ZnO/ZnGa2O4 core-shell nanorods grown on ZnO/glass templates by reactive evaporation", Chem. Phys. Lett., Vol. 411, No. 1-3, pp. 221-224, August 2005.
  593. C. H. Liu, T. K. Lin and S. J. Chang, "GaAs MOS capacitors with photo-CVD SiO2 insulator layers", Solid State Electron., Vol. 49, No. 7, pp. 1077-1080, July 2005.
  594. C. L. Hsu, S. J. Chang, Y. R. Lin, S. Y. Tsai and I. C. Chen, "Vertically well aligned P-doped ZnO nanowires synthesized on ZnO-Ga/glass templates", Chem. Commun., Issue 28, pp. 3571-3573, July 2005.
  595. S. J. Chang, H. C. Yu, Y. K. Su, I. L. Chen, T. D. Lee, C. M. Lu, C. H. Chiou, Z. H. Lee, H. P. Yang and C. P. Sung, "Highly strained InGaAs oxide confined VCSELs emitting in 1.25 m", Mater. Sci. Eng. B, Vol. 121, No. 1-2, pp. 60-63, July 2005.
  596. S. C. Hung, Y. K. Su, S. J. Chang, S. C. Chen, T. H. Fang and L. W. Ji, "GaN nanocolumns formed by inductively coupled plasmas etching", Physica E, Vol. 28, No. 2, pp. 115-120, July 2005.
  597. C. M. Tsai, J. K. Sheu, W. C. Lai, Y. P. Hsu, P. T. Wang, C. T. Kuo, C. W. Kuo, S. J. Chang and Y. K. Su, "Enhanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD", IEEE. Electron. Dev. Lett., Vol. 26, No. 7, pp. 464-466, July 2005.
  598. Y. K. Su, S. J. Chang, S. C. Wei, S. M. Chen and W. L. Li, "ESD engineering of nitride-based LEDs", IEEE Tran. Dev. Mater. Reliability, Vol. 5, No. 2, pp. 277-281, June 2005.
  599. S. J. Chang, C. K. Wang, Y. K. Su, C. S. Chang, T. K. Lin, T. K. Ko and H. L. Liu, "GaN MIS capacitors with photo-CVD SiNxOy insulating layers", J. Electrochem. Soc., Vol. 152, No. 6, pp. G423-G426, June 2005.
  600. H. S. Hou, S. J. Chang and Y. K. Su, "Practical passive filter synthesis using genetic programming", IEICE Tran. Electron., Vol. E88C, No. 6, pp. 1180-1185, June 2005.
  601. S. C. Wei, Y. K. Su, S. J. Chang, S. M. Chen and W. L. Li, "Nitride-based MQW LEDs with multiple GaN-SiN nucleation layers", IEEE Tran. Electron. Dev., Vol. 52, No. 6, pp. 1104-1109, June 2005.
  602. C. K. Wang, S. J. Chang, Y. K. Su, Y. Z. Chiou, C. S. Chang, T. K. Lin, H. L. Liu and J. J. Tang, "High detectivity GaN metal-semiconductor-metal UV photodetectors with transparent tungsten electrodes", Semicond. Sci. Technol., Vol. 20, No. 6, pp. 485-489, June 2005.
  603. C. K. Wang, R. W. Chuang, S. J. Chang, Y. K. Su, S. C. Wei, T. K. Lin, T. K. Ko, Y. Z. Chiou and J. J. Tang, "High temperature and high frequency characteristics of AlGaN/GaN MOS-HFETs with photochemical vapor deposition SiO2 layer", Mater. Sci. Eng. B, Vol. 119, No. 2, pp. 25-28, May 2005.
  604. S. J. Chang, C. S. Chang, Y. K. Su, C. T. Lee, W. S. Chen, C. F. Shen, Y. P. Hsu, S. C. Shei and H. M. Lo, "Nitride-based flip-chip ITO LEDs", IEEE Tran. Adv. Packaging, Vol. 28, No. 2, pp. 273-277, May 2005.
  605. C. W. Huang, S. J. Chang, W. Wu, C. L. Wu and C. S. Chang, "Ka band 1W PHEMT MMIC power amplifiers on 2mil-thick GaAs substrates", Microwave Optical Technol. Lett. , Vol. 45, No. 3, pp. 181-185, May 2005.
  606. S. C. Hung, Y. K. Su, S. J. Chang, S. C. Chen, L. W. Ji, T. H. Fang, L. W. Tu and M. Chen, "Self-formation of GaN hollow nanocolumns by inductively coupled plasma etching", Appl. Phys. A, Vol. 80, No. 8, pp. 1607-1610, May 2005.
  607. T. K. Lin, S. J. Chang, Y. K. Su, Y. Z. Chiou, C. K. Wang, S. P. Chang, C. M. Chang, J. J. Tang and B. R. Huang, "ZnSe MSM photodetectors prepared on GaAs and ZnSe substrates", Mater. Sci. Eng. B, Vol. 119, No. 2, pp. 202-205, May 2005.
  608. C. L. Hsu, S. J. Chang, H. C. Hung, Y. R. Lin, C. J. Huang, Y. K. Tseng and I. C. Chen, "Well-aligned, vertically Al-doped ZnO nanowires synthesized on ZnO:Ga/glass templates", J. Electrochem. Soc., Vol. 152, No. 5, pp. G378-G381, May 2005.
  609. J. D. Hwang, Z. Y. Lai, C. Y. Wu and S. J. Chang, "Enhancing P-type conductivity in Mg-doped GaN using oxygen and nitrogen plasma activation", Jpn. J. Appl. Phys., Vol. 44, No. 4A, pp. 1726-1729, April 2005.
  610. M. L. Tu, Y. K. Su, S. J. Chang, T. H. Fang, W. H. Chen and H. Yang, "Improved performance of 2,3-dibutoxy-1,4-phenylene vinylene based polymer light-emitting diodes by thermal annealing", Jpn. J. Appl. Phys., Vol. 44, No. 4B, pp. 2787-2789, April 2005.
  611. C. S. Chang, S. J. Chang, Y. K. Su, W. S. Chen, C. F. Shen, S. C. Shei and H. M. Lo, "Nitride-based power chip with indium-tin-oxide p-contact and Al back-side reflector", Jpn. J. Appl. Phys., Vol. 44, No. 4B, pp. 2462-2464, April 2005.
  612. C. K. Wang, S. J. Chang, Y. K. Su, Y. Z. Chiou, C. H. Kuo, C. S. Chang, T. K. Lin, T. K. Ko and J. J. Tang, "Noise characteristics of AlGaN/GaN/AlGaN double heterostructure metal-oxide-semiconductor heterostructure field effect transistors with photochemical vapor deposition SiO2 layer", Jpn. J. Appl. Phys., Vol. 44, No. 4B, pp. 2458-2461, April 2005.
  613. S. H. Hsu, Y. K. Su, R. W. Chuang, S. J. Chang, W. C. Chen and W. R. Chen, "Study of electronic properties by persistent photoconductivity measurement in GaxIn1-xNyAs1-y grown by MOCVD", Jpn. J. Appl. Phys., Vol. 44, No. 4B, pp. 2454-2457, April 2005.
  614. C. L. Yu, C. H. Chen, S. J. Chang, Y. K. Su, S. C. Chen, P. C. Chang, P. C. Chen, M. H. Wu, H. C. Chen and K. C. Su, "In0.37Ga0.63N metal-semiconductor-metal photodetectors with recessed electrodes", IEEE Photon. Technol. Lett., Vol. 17, No. 4, pp. 875-877, April 2005.
  615. W. S. Chen, S. J. Chang, Y. K. Su, C. T. Lee, R. L. Wang, C. H. Kuo and S. C. Chen, "AlxGa1-xN/GaN HEMTs with various Al mole fractions in AlGaN barrier", J. Crystal Growth, Vol. 275, No. 3-4, pp. 398-403, March 2005.
  616. Y. R. Lin, Y. K. Tseng, S. S. Yang, S. T. Wu, C. L. Hsu and S. J. Chang, "Buffer-facilitated epitaxial growth of ZnO nanowire", Crystal Growth & Design, Vol. 5, No. 2, pp. 579-583, March 2005.
  617. Y. P. Hsu, S. J. Chang, Y. K. Su, J. K. Sheu, C. H. Kuo, C. S. Chang and S. C. Shei, "ICP etching of sapphire substrates", Optical Mater., Vol. 27, No. 6, pp. 1171-1174, March 2005.
  618. S. M. Wang, C. H. Chen, S. J. Chang, Y. K. Su and B. R. Huang, "Mg-doped GaN activated with Ni catalysts", Mater. Sci. Eng. B, Vol. 117, No. 2, pp. 107-111, March 2005.
  619. Y. K. Su, P. C. Chang, C. H. Chen, S. J. Chang, C. L. Yu, C. T. Lee, H. Y. Lee, J. Gong, P. C. Chen and C. H. Wang, "Nitride-based MSM UV photodetectors with photo-CVD annealed Schottky contacts", Solid State Electron., Vol. 49, No. 3, pp. 459-463, March 2005.
  620. C. W. Huang, S. J. Chang, W. Wu, C. L. Wu and C. S. Chang, "A Ku-band four-stage temperature compensated PHEMT MMIC power amplifier", Microwave Optical Technol. Lett., Vol. 44, No. 5, pp. 480-485, March 2005.
  621. J. L. Yang, J. S. Chen and S. J. Chang, "Effect of Au distribution in NiO/Au film on the ohmic contact formation to p-type GaN", J. Materials Research, Vol. 20, No. 2, pp.456-463, February, 2005.
  622. Y. M. Lin, S. L. Wu, S. J. Chang, P. S. Chen and C. W. Liu, "SiGe/Si PMOSFET using graded channel technique", Mater. Sci. Semicond. Processing, Vol. 8, No. 1-3, pp. 367-370, February-June 2005..
  623. P. W. Chien, S. L. Wu, S. J. Chang, S. Koh and Y. Shiraki, "High-performance SiGe heterostructure FET grown on silicon-on-insulator ", Mater. Sci. Semicond. Processing, Vol. 8, No. 1-3, pp. 367-370, February-June 2005..
  624. C. H. Lee, S. L. Wu and S. J. Chang, "SiGe heterostructure field-effect transistor with ICP mesa treatments", Mater. Sci. Semicond. Processing, Vol. 8, No. 1-3, pp. 371-375, February-June 2005.
  625. T. K. Lin, S. J. Chang, Y. K. Su, Y. Z. Chiou, C. K. Wang, C. M. Chang and B. R. Huang, "ZnSe homoepitaxial MSM photodetectors with transparent ITO contact electrodes", IEEE Tran. Electron. Dev., Vol. 52, No. 1, pp. 121-123, January 2005.
  626. J. D. Hwang, G. H. Yang, W. T. Chang, C. C. Lin, R. W. Chuang and S. J. Chang, "A novel transparent ohmic contact of indium tin oxide to n-type GaN", Microelectron. Eng., Vol. 77, No. 1, pp. 71-75, January 2005.
  627. T. M. Kuan, S. J. Chang, Y. K. Su, J. C. Lin, C. W. H. Lan, J. A. Bardwell, H. Tang, W. J. Lin and Y. T. Cherng, "High performance GaN/InGaN HFETs on Mg-doped GaN carrier blocking layers", J. Cryst. Growth, Vol. 272, No. 1-4, pp. 300-304, December 2004.
  628. S. H. Hsu, Y. K. Su, S. J. Chang, K. I. Lin, W. H. Lan, P. S. Wu and C. H. Wu, "Temperature dependence of the optical properties on GaInNP", J. Cryst. Growth, Vol. 272, No. 1-4, pp. 765-771, December 2004.
  629. P. C. Chang, C. H. Chen, S. J. Chang, Y. K. Su, C. L. Yu, P. C. Chen and C. H. Wang, "AlGaN/GaN MSM photodetectors with photo-CVD annealed Ni/Au semi-transparent contacts", Semicond. Sci. Technol., Vol. 19, No. 12, pp. 1354-1357, December 2004.
  630. C. L. Hsu, S. S. Yang, Y. K. Tseng, I. C. Chen, Y. R. Lin, S. J. Chang and S. T. Wu, "A new and simple means for self-assembled nanostructure: facilitated by buffer layer", J. Phys. Chem. B, Vol. 108, No. 49, pp. 18799-18803, December 2004.
  631. X. H. Wang, X. W. Fan, C. X. Shan, Z. Z. Zhang, J. Y. Zhang, Y. M. Lu, Y. C. Liu, D. Z. Shen, Y. K. Su and S. J. Chang, "MOVPE growth of ZnSe films on ZnO/Si templates", Mater. Chem. Phys., Vol. 88, No. 1, pp. 102-105, November 2004.
  632. L. W. Ji, Y. K. Su, S. J. Chang, S. C. Hung, C. S. Chang, and L. W. Wu, "Nitride-based light-emitting diodes with InGaN/GaN SAQD active layers", IEE Proc. - Circuit, Devices & Systems, Vol. 151, No. 5, pp. 486-488, October 2004.
  633. K. T. Liu, Y. K. Su, S. J. Chang, K. Onomitsu and Y. Horikoshi, "Donor isoelectronic trap pair luminescence from Mg and P co-implanted GaN grown by MOCVD", Phys. Stat. Sol. B, Vol. 241, No. 12, pp. 2003-2007, October 2004.
  634. T. C. Wen, S. J. Chang, C. T. Lee, W. C. Lai and J. K. Sheu, "Nitride-based LEDs with modulation doped Al0.12Ga0.88N/GaN superlattice structures", IEEE Tran. Electron. Dev., Vol. 51, No. 10, pp. 1743-1746, October 2004.
  635. C. H. Lin, Y. K. Su, Y. Z. Juang, R. W. Chung, S. J. Chang, J. F. Chen and C. H. Tu, "The effect of geometry on the noise characterization of SiGe HBTs and optimized device sizes for the design of low noise amplifiers", IEEE Tran. Microwave Theory Technol., Vol. 52, No. 9, pp. 2153-2162, September 2004.
  636. C. W. Huang, S. J. Chang, W. Wu, C. L. Wu and C. S. Chang, "A Ka-band PHEMT diode double balanced star mixer MMIC", Microwave Optical Technol. Lett., Vol. 42, No. 6, pp. 455-458, September 2004.
  637. C. H. Liu, R. W. Chuang, S. J. Chang, Y. K. Su, L. W. Wu and C. C. Lin, "Improved light output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough surface", Mater. Sci. Eng. B, Vol. 112, No. 1, pp. 10-13, September 2004.
  638. C. K. Wang, S. J. Chang, Y. K. Su, C. S. Chang, Y. Z. Chiou, C. H. Kuo, T. K. Lin, T. K. Ko, and J. J. Tang, "GaN MSM photodetectors with TiW transparent electrodes", Mater. Sci. Eng. B, Vol. 112, No. 1, pp. 25-29, September 2004.
  639. M. L. Lee, J. K. Sheu, Y. K. Su, S. J. Chang, W. C. Lai and G. C. Chi, "Reducetion of dark current in AlGaN/GaN Schottky barrier photodetectors with a low temperature grown GaN cap layer", IEEE Electron Dev. Lett., Vol. 25, No. 9, pp. 593-595, September 2004.
  640. C. H. Liu, R. W. Chuang, S. J. Chang, Y. K. Su, C. H. Kuo, J. M. Tsai and C. C. Lin, "InGaN/GaN MQW blue LEDs with GaN/SiN double buffer layers", Mater. Sci. Eng. B, Vol. 111, No. 2-3, pp. 214-217, August 2004.
  641. C. H. Lee, S. L. Wu and S. J. Chang, "Improved performance of SiGe doped-channel field-effect transistors using inductively coupled plasma etching", Semicond. Sci. Technol., Vol. 19, No. 8, pp. 1053-1056, August 2004.
  642. C. W. Huang, S. J. Chang, W. Wu, C. L. Wu and C. S. Chang, "A three-stage Ka band PHEMT wideband amplifier MMIC", Microwave and Optical Technol. Lett., Vol. 42, No. 4, pp. 277-280, August 2004.
  643. C. H. Wang, S. J. Chang and P. C. Chang, "Effect of sintering conditions on characteristics of PbTiO3-PbZrO3-Pb(Mg1/3Nb2/3)O3-Pb(Zn1/3Nb2/3)O3", Mater. Sci. Eng. B, Vol. 111, No. 2-3, pp. 124-130, August 2004.
  644. Y. K. Su, H. C. Yu, S. J. Chang, C. T. Lee, J. S. Wang, A. R. Kovsh, Y. T. Wu, K. F. Lin and C. Y. Huang, "1.3mm InAs quantum dot resonant-cavity light emitting diodes", Mater. Sci. Eng. B, Vol. 110, No. 3, pp. 256-259, July 2004.
  645. Y. K. Su, S. J. Chang, T. M. Kuan, C. H. Ko, J. B. Webb, W. H. Lan, Y. T. Cherng and S. C. Chen, "Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching", Mater. Sci. Eng. B, Vol. 110, No. 3, pp. 260-264, July 2004.
  646. Y. K. Su, S. J. Chang, T. M. Kuan, C. H. Ko, J. B. Webb, W. H. Lan, Y. T. Cherng and S. C. Chen, "Nitride-based HFETs with carrier confinement layers", Mater. Sci. Eng. B, Vol. 110, No. 2, pp. 172-176, July 2004.
  647. K. T. Liu, T. Tezuka, S. Sugita, Y. Watari, Y. Horikoshi, Y. K. Su and S. J. Chang, "Improved crystal quality for MBE grown GaN layers", Mater. Chem. Phys., Vol. 86, No. 1, pp. 161-164, July 2004.
  648. C. H. Wu, Y. K. Su, S. J. Chang, Y. S. Huang and Y. P. Hsu, "Device characteristics of the GaAs-based heterojunction bipolar transistors using InGaAs/GaAsP strain compensated layers as base material", Semicond. Sci. Technol , Vol. 19, No. 7, pp. 828-832, July 2004.
  649. K. S. Ramaiah, Y. K. Su, S. J. Chang, C. H. Chen, F. S. Juang, H. P. Liu and I. G. Chen, "Studies of InGaN/GaN multiquantum-well green-light-emitting diodes grown by metalorganic chemical vapor deposition", Appl. Phys. Lett., Vol. 85, No. 3, pp. 401-403, July 2004.
  650. S. L. Wu, P. W. Chien, S. J. Chang, S. Koh and Y. Shiraki, "Influences of delta-doping position on the characteristics of SiGe-Si DCFETs", IEEE Electron. Dev. Lett., Vol. 25, No. 7, pp. 477-479, July 2004.
  651. S. J. Chang, L. W. Wu, Y. K. Su, Y. P. Hsu, W. C. Lai, J. M. Tsai, J. K. Sheu and C. T. Lee, "Nitride-based LEDs with 800oC-grown p-AlInGaN/GaN double cap layers", IEEE Photon. Technol. Lett., Vol. 16, No. 6, pp. 1447-1449, June 2004.
  652. C. H. Liu, C. K. Wang, S. J. Chang and Y. K. Su, "High transconductance nitride-based MOSHFETs", Mater. Sci. Eng. B, Vol. 110, No. 1, pp. 32-33, June 2004.
  653. L. W. Ji, Y. K. Su, S. J. Chang, S. T. Tsai, S. C. Hung, R. W. Chuang, T. H. Fang and T. Y. Tsai, "Growth of InGaN self-assembled quantum dots and their application to photodetectors", J. Vac. Sci. Technol. A, Vol. 22, No. 3, pp. 792-795, May/June 2004.
  654. C. H. Chen, S. J. Chang and Y. K. Su, "InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer", J. Vac. Sci. Technol. A, Vol. 22, No. 3, pp. 1020-1022, May/June 2004.
  655. K. S. Ramaiah, Y. K. Su, S. J. Chang, B. Kerr, H. P. Liu and I. G. Chen, "Characterization of InGaN/GaN multi-quantum-well blue-light-emitting diodes grown by metal organic chemical vapor deposition", Appl. Phys. Lett., Vol. 84, No. 17, pp. 3307-3309, April 2004.
  656. P. C. Chang, C. H. Chen, S. J. Chang, Y. K. Su, P. C. Chen, Y. D. Jhou, H. Hung, C. M. Wang and B. R. Huang, "InGaN/GaN MQW MIS photodetectors with photo-CVD SiO2 layers", Jpn. J. Appl. Phys., Vol. 43, No. 4B, pp. 2008-2010, April 2004.
  657. H. C. Yu, S. J. Chang, Y. K. Su, C. P. Sung, H. P. Yang, C. Y. Huang, Y. W. Lin, J. M. Wang, F. I. Lai, H. C. Kuo, "Improvement of high speed oxide confined vertical cavity surface emitting lasers", Jpn. J. Appl. Phys., Vol. 43, No. 4B, pp. 1947-1950, April 2004.
  658. C. H. Wu, Y. K. Su, S. C. Wei, S. J. Chang, C. C. Sio and S. C. Chen, "Reduction of turn-on voltage in GaInNAs/InGaAs base double heterojunction bipolar transistors", Jpn. J. Appl. Phys., Vol. 43, No. 4B, pp. 1919-1921, April 2004.
  659. S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, W. C. Lai, C. H. Kuo, Y. P. Hsu, Y. C. Lin, S. C. Shei, H. M. Lo, J. C. Ke and J. K. Sheu, "Nitride-based LEDs with an SPS tunneling contact layer and an ITO transparent contact", IEEE Photon. Technol. Lett., Vol. 16, No. 4, pp. 1002-1004, April 2004.
  660. Y. K. Su, C. H. Wu, Y. S. Huang, Y. P. Hsu, W. C. Chen, S. H. Hsu and S. J. Chang, "Piezoreflectance and contactless electroreflectance spectra of an optoelectronic material: GaInNP grown on GaAs substrates", J. Crystal Growth, Vol. 264, No. 1-3, pp. 1919-1921, March 2004.
  661. C. H. Liu, S. J. Chang, J. F. Chen, J. S. Lee, S. C. Chen and U. H. Liaw, "Electrical and reliability characteristics of oxynitride gate dielectric grown by diluted steam rapid thermal oxidation and annealed in nitric oxide", Mater. Sci. Eng. B, Vol. 107, No. 3, pp. 310-316, March 2004.
  662. C. S. Chang, S. J. Chang, Y. K. Su, C. T. Lee, Y. C. Lin, W. C. Lai, S. C. Shei, J. C. Ke and H. M. Lo, "Nitride-based LEDs with textured side walls", IEEE Photon. Technol. Lett., Vol. 16, No. 3, pp. 750-752, March 2004.
  663. K. T. Liu, T. Tezuka, S. Sugita, Y. Watari, Y. Horikoshi, Y. K. Su and S. J. Chang, "Modulated beam growth method for MBE grown GaN layers", J. Crystal Growth, Vol. 263, No. 1-4, pp. 400-405, March 2004.
  664. L. W. Ji, Y. K. Su, S. J. Chang, C. S. Chang, L. W. Wu, W. C. Lai, X. L. Du and H. Chen, "InGaN/GaN multi-quantum dot light-emitting diodes", J. Crystal Growth, Vol. 263, No. 1-4, pp. 114-118, March 2004.
  665. L. W. Ji, Y. K. Su, S. J. Chang, T. H. Fang, T. C. Wen, and S. C. Hung, "Growth of ultra small self-assembled InGaN nanotips", J. Crystal Growth, Vol. 263, No. 1-4, pp. 63-67, March 2004.
  666. Y. K. Su, S. J. Chang, L. W. Ji, C. S. Chang, L. W. Wu, W. C. Lai, T. H. Fang and K. T. Lam, "InGaN/GaN blue light-emitting diodes with self-assembled quantum dots", Semicond. Sci. Technol., Vol. 19, No. 3, pp. 389-392, March 2004.
  667. Y. K. Su, C. H. Wu, S. H. Hsu, S. J. Chang, W. C. Chen, Y. S. Huang and H. P. Hsu, "Observation of spontaneous ordering in the optoelectronic material GaInNP", Appl. Phys. Lett., Vol. 84, No. 8, pp. 1299-1301, February 2004.
  668. L. W. Ji, Y. K. Su, S. J. Chang, S. C. Hung, C. K. Wang, T. H. Fang, T. Y. Tsai,R. Chuang, W. Su and J. C. Zhong, "InGaN metal-semiconductor-metal photodiodes with nanostructures", Jpn. J. Appl. Phys., Vol. 43, No. 2, pp. 518-521, February 2004.
  669. X. H. Wang, X. W. Fan, C. X. Shan, Z. Z. Zhang, W. Su, J. Y. Zhang, Y. K. Su, S. J. Chang, Y. M. Lu, Y. C. Liu and D. Z. Shen, "Growth of ZnSe films on ZnO-Si templates", Mater. Sci. Eng. B, Vol. 107, No. 1, pp. 84-88, February 2004.
  670. C. H. Liu, S. J. Chang, J. F. Chen, S. C. Chen, J. S. Lee and U. H. Liaw, "High quality ultra thin chemical-vapor-deposited Ta2O5 capacitors prepared by high density plasma annealing", Mater. Sci. Eng. B, Vol. 106, No. 3, pp. 234-241, February 2004.
  671. Y. P. Hsu, S. J. Chang, Y. K. Su, J. K. Sheu, C. T. Lee, T. C. Wen, L. W. Wu, C. H. Kuo, C. S. Chang and S. C. Shei, "Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs", J. Crystal Growth, Vol. 231, No. 4, pp. 466-470, February 2004.
  672. C. H. Liu, L. W. Wu, S. J. Chang, J. F. Chen, U. H. Liaw and S. C. Chen, "Ion Implantation technology for improved GaAs MESFETs performance", J. Mater. Sci.: Mater. Electron., Vol. 15, No. 2, pp. 91-93, February 2004.
  673. H. C. Yu, S. J. Chang, Y. K. Su, C. P. Sung, Y. W. Lin, H. P. Yang, C. Y. Huang and J. M. Wang, "A simple process for fabrication of high speed vertical cavity surface emitting lasers", Mater. Sci. Eng. B, Vol. 106, No. 1, pp. 101-104, January 2004.
  674. C. H. Kuo, S. J. Chang, Y K. Su, C. S. Chang, L. W. Wu, W. C. Lai, J. F. Chen, J. K. Sheu, H. M. Lo and J. M. Tsai, "Nitride-based near-ultraviolet LEDs with an ITO transparent contact", Mater. Sci. Eng. B, Vol. 106, No. 1, pp. 69-72, January 2004.
  675. S. J. Chang, C. H. Chen, P. C. Chang, Y. K. Su, P. C. Chen, Y. D. Jhou, H. Hung, C. M. Wang and B. R. Huang, "Nitride-based LEDs with p-InGaN capping layer", IEEE Tran. Electron. Dev., Vol. 50, No. 12, pp. 2567-2570, December 2003.
  676. S. J. Chang, Y. K. Su, Y. C. Lin, R. W. Chuang, C. S. Chang, J. K. Sheu, T. C. Wen, S. C. Shei, C. W. Kuo and D. H. Fang, "MOCVD growth of InGaN/GaN light emitting diodes on patterned sapphire substrates", Phys. Stat. Sol. C, Vol. 0, No. 7, pp. 2253-2256, December 2003.
  677. C. H. Chen, S. J. Chang and Y. K. Su, "InGaN/GaN multiple-quantum-well dual-wavelength near-white light emitting diodes", Phys. Stat. Sol. C, Vol. 0, No. 7, pp. 2257-2260, December 2003.
  678. C. K. Wang, S. J. Chang, Y. K. Su, Y. Z. Chiou, T. K. Lin and B. R. Huang, "Low interface state density AlGaN/GaN MOSHFETs with photochemical vapor deposition SiO2 layers", Phys. Stat. Sol. C, Vol. 0, No. 7, pp. 2355-2359, December 2003.
  679. Y. M. Lin, S. L. Wu, S. J. Chang, S. Koh and Y. Shiraki, "P-Type enhancement mode SiGe doped channel field effect transistor", Jpn. J. Appl. Phys. Lett., Vol. 42, No. 12A, pp. L1422-L1424, December 2003.
  680. C. K. Wang, T. K. Lin, Y. Z. Chiou, S. J. Chang, Y. K. Su, C. H. Kuo and T. K. Ko, "High transconductance AlGaN/GaN MOSHFETs with photo-CVD gate oxide", Semicond. Sci. Technol., Vol. 18, No. 12, pp. 1033-1036, December 2003.
  681. W. Su, J. C. Zhong, W. L. Liu, Y. K. Su, S. J. Chang, H. C. Yu, L. W. Ji, L. Li and Y. J. Zhao, "Design and numerical simulation of novel DBRs", Chinese Opt. Lett., Vol. 200, No. 1, pp. 674-676, November 2003.
  682. C. H. Chen, S. J. Chang and Y. K. Su, "High electrostatic discharge protection of InGaN/GaN MQW LEDs by using GaN Schottky diodes", Phys. Stat. Sol. (a), Vol. 200, No. 1, pp. 91-94, November 2003.
  683. C. S. Chang, S. J. Chang, Y. K. Su, C. H. Kuo, W. C. Lai, Y. C. Lin, Y. P. Hsu, S. C. Shei, C. M. Tsai, H. M. Lo, J. C. Ke and J. K. Sheu, "High brightness InGaN LEDs with an ITO on n++-SPS upper contact", IEEE Tran. Electron. Dev., Vol. 50, No. 11, pp. 2208-2212, November 2003.
  684. C. H. Kuo, S. J. Chang, Y. K. Su, C. K. Wang, L. W. Wu J. K. Sheu, T. C. Wen, W. C. Lai, J. M. Tsai and C. C. Lin, "Nitride-based blue LEDs with GaN/SiN double buffer layers", Solid State Electron., Vol. 47, No. 11, pp. 2019-2022, November 2003.
  685. S. J. Chang, T. M. Kuan, Y. K. Su, C. H. Ko, J. B. Webb, J. A. Bardwell, Y. Liu, H. Tang, W. J. Lin, Y. T. Cherng and W. H. Lan, "Nitride-based 2DEG photodetectors with a large AC responsivity", Solid State Electron., Vol. 47, No. 11, pp. 2023-2026, November 2003.
  686. L. W. Wu, S. J. Chang, Y. K. Su, R. W. Chuang, Y. P. Hsu, C. H. Kuo, W. C. Lai, T. C. Wen, J. M. Tsai and J. K. Sheu, "In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer", Solid State Electron., Vol. 47, No. 11, pp. 2027-2030, November 2003.
  687. S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, Y. C. Lin, S. C. Shei, H. M. Lo, H. Y. Lin and J. C. Ke, "Highly reliable nitride based LEDs with SPS+ITO upper contacts", IEEE J. Quan. Electron., Vol. 39, No. 11, pp. 1439-1443, November 2003.
  688. L. W. Ji, Y. K. Su, S. J. Chang, S. H. Liu, C. K. Wang, S. T. Tsai, T. H. Fang, L. W. Wu and Q, K. Xue, "InGaN quantum dot photodetectors", Solid State Electron., Vol. 47, No. 10, pp. 1753-1756, October 2003.
  689. Y. K. Su, S. C. Wei, R. L. Wang, S. J. Chang, C. H. Ko and T. M. Kuan, "Flicker noise of GaN-based heterostructure field-effect transistors with Si-doped AlGaN carrier injection layer", IEEE Electron. Dev. Lett., Vol. 24, No. 10, pp. 622-624, October 2003.
  690. L. W. Ji, Y. K. Su, S. J. Chang, L. W. Wu, T. H. Fang, Q. K. Xue, W. C. Lai and Y. Z. Chiou, "A novel method to fabricate InGaN self-assembled quantum dots by metalorganic chemical vapor deposition", Mater. Lett., Vol. 57, No. 26-27, pp. 4218-4221, September 2003.
  691. C. H. Ko, Y K. Su, S. J. Chang, T. Y. Tsai, T. M. Kuan, W. H. Lan, J. C. Lin, W. J. Lin, Y. T. Cherng and J. B. Webb, "Two-step epitaxial lateral overgrowth of GaN", Mater. Chem. Phys., Vol. 82, No. 1, pp. 55-60, September 2003.
  692. T. M. Kuan, S. J. Chang, C. H. Ko, Y. K. Su, J. B. Webb, J. A. Bardwell, Y. Liu, H. Tang, W. J. Lin, Y. T. Cherng and W. H. Lan, "High optical gain AlGaN/GaN 2DEG photodetectors", Jpn. J. Appl. Phys. Lett , Vol. 42, No. 9A, pp. 5563-5564, September 2003.
  693. S. J. Chang, Y. C. Lin, Y. K. Su, C. S. Chang, T. C. Wen, S. C. Shei, J. C. Ke, C. W. Kuo, S. C. Chen and C. H. Liu, "Nitride-based LEDs fabricated on patterned sapphire substrates", Solid State Electron., Vol. 47, No. 9, pp. 1539-1542, September 2003.
  694. Y. C. Lin, S. J. Chang, Y. K. Su, C. S. Chang, S. C. Shei, J. C. Ke, H. M. Lo, S. C. Chen and C. W. Kuo, "High power nitride based light emitting diodes with Ni/ITO p-type contacts", Solid State Electron., Vol. 47, No. 9, pp. 1565-1568, September 2003.
  695. Y. Z. Chiou, S. J. Chang, Y. K. Su, C. K. Wang, T. K. Lin and B. R. Huang, "Photo-CVD SiO2 layers on AlGaN and AlGaN/GaN MOSHFET", IEEE Tran. Electron. Dev., Vol. 50, No. 8, pp. 1748-1752, August 2003.
  696. L. W. Wu, S. J. Chang, Y. K. Su, R. W. Chuang, T. C. Wen, C. H. Kuo, W. C. Lai, C. S. Chang, J. M. Tsai and J. K. Sheu, "Nitride-based green light emitting diodes with high temperature GaN barrier layers", IEEE Tran. Electron. Dev., Vol. 50, No. 8, pp. 1766-1770, August 2003.
  697. M. L. Lee, J. K. Sheu, W. C. Lai, Y. K. Su, S. J. Chang, C. J. Kao, C. J. Tun, M. G. Chen, W. H. Chang, G. C. Chi and J. M. Tsai, "Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer", J. Appl. Phys., Vol. 94, No. 3, pp. 1753-1757, August 2003.
  698. C. H. Liu, Y. K. Su, T. C. Wen, S. J. Chang and R. W. Chuang, "Nitride-based green light emitting diodes grown by temperature ramping", J. Crystal Growth, Vol. 254, No. 3-4, pp. 336-341, July 2003.
  699. C. H. Liu, C. S. Chang S. J. Chang, Y. K. Su, Y. Z. Chiou, S. H. Liu and B. R. Huang, "The characteristics of photo-CVD SiO2 and its application on SiC MIS photodetectors", Mater. Sci. Eng. B, Vol. 100, No. 2, pp. 142-146, July 2003.
  700. C. S. Chang, S. J. Chang, Y. K. Su, Y. Z. Chiou, Y. C. Lin, Y. P. Hsu, S. C. Shei, J. C. Ke, H, M, Lo, S. C. Chen and C. H. Liu, "InGaN/GaN light emitting diodes with rapid thermal annealed Ni/ITO p-contacts", Jpn. J. Appl. Phys., Vol. 42, No. 6A, pp. 3324-3327, June 2003.
  701. S. J. Chang, S. C. Wei, Y. K. Su, C. H. Liu, S. C. Chen, U. H. Liaw, T. Y. Tsai and T. H. Hsu, "AlGaN/GaN MODFETs with an Mg-doped current confinement layer", Jpn. J. Appl. Phys., Vol. 42, No. 6A, pp. 3316-3319, June 2003.
  702. C. H. Liu, Y. K. Su, L. W. Wu, S. J. Chang and R. W. Chuang, "Tunneling efficiency of n+-InGaN/GaN SPS tunneling contact layer for nitride-based LEDs", Semicond. Sci. Technol., Vol. 18, No. 6, pp. 545-548, June 2003.
  703. X. D. Chen, Y. Huang, S. Fung, C. D. Beling, C. C. Ling, J. K. Sheu, M. L. Lee, G. C. Chi and S. J. Chang, "Deep level defect in Si-implanted GaN n+-p junction", Appl. Phys. Lett., Vol. 82, No. 21, pp. 3671-3673, May 2003.
  704. Y. Z. Chiou, Y. K. Su, S. J. Chang, J. Gong, C. S. Chang and S. H. Liu, "The properties of photo chemical vapor deposition SiO2 and its application in GaN metal insulator semiconductor ultraviolet photodetectors", J. Electron. Mater., Vol. 32, No. 5, pp. 395-399, May 2003.
  705. J. K. Sheu, C. J. Kao, M. L. Lee, W. C. Lai, L. S. Yeh, G. C. Chi, S. J. Chang, Y. K. Su and J. M. Tsai, "Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer", J. Electron. Mater., Vol. 32, No. 5, pp. 400-402, May 2003.
  706. Y. P. Hsu, S. J. Chang, Y. K. Su, C. S. Chang, S. C. Shei. Y. C. Lin, C. H. Kuo, L. W. Wu and S. C. Chen, "InGaN/GaN light emitting diodes with a reflector at the backside of sapphire substrates", J. Electron. Mater., Vol. 32, No. 5, pp. 403-406, May 2003.
  707. C. K. Wang, Y. Z. Chiou, S. J. Chang, Y. K. Su, B. R. Huang, T. K. Lin and S. C. Chen, "AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor with photo chemical vapor deposition SiO2 gate oxide", J. Electron. Mater., Vol. 32, No. 5, pp. 407-410, May 2003.
  708. L. W. Wu, S. J. Chang, Y. K. Su, T. Y. Tsai, T. C. Wen, C. H. Kuo, W. C. Lai, J. K. Sheu, J. M. Tsai, S. C. Chen and B. R. Huang, "InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer", J. Electron. Mater., Vol. 32, No. 5, pp. 411-414, May 2003.
  709. C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. M. Tsai and S. C. Chen, "Nitride-based near ultraviolet multiple quantum well light emitting diodes with AlGaN barrier layers", J. Electron. Mater., Vol. 32, No. 5, pp. 415-418, May 2003.
  710. T. C. Wen, S. J. Chang, Y. K. Su, L. W. Wu, C. H. Kuo, W. C. Lai and J. K. Sheu, "InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping", J. Electron. Mater., Vol. 32, No. 5, pp. 419-422, May 2003.
  711. Y. Z. Chiou, Y. K. Su, S. J. Chang, J. Gong, Y. C. Lin, S, H, Liu and C. S. Chang, "InGaN/GaN multiquantum well p-n junction photodiodes", IEEE J. Quan. Electron., Vol. 39, No. 5, pp. 681-685, May 2003.
  712. Y. K. Su, S. J. Chang, Y. Z. Chiou, T. Y. Tsai, J. Gong, Y. C. Lin, S. H. Liu and C. S. Chang, "Nitride-based multiquantum well p-n junction photodiodes", Solid State Electron., Vol. 47, No. 5, pp. 879-883, May 2003.
  713. L. S. Yeh, M. L. Lee, J. K. Sheu, M. G. Chen, C. J. Kao, C. J. Tun, G. C. Chi, S. J. Chang and Y. K. Su, "Visible-blind GaN p-i-n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure", Solid State Electron., Vol. 47, No. 5, pp. 873-878, May 2003.
  714. Y. C. Lin, S. J. Chang, Y. K. Su, T. Y. Tsai, S. C. Chang, S. C. Shei, C. W. Kuo and S. C. Chen, “InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts”, Solid State Electron., Vol. 47, No. 5, pp. 849-853, May 2003.
  715. S. C. Wei, Y. K. Su, T. M. Kuan, R. L. Wang, S. J. Chang, C. H. Ko, J. B. Webb and J. A. Bardwell, "Investigation of low frequency noise of GaN-based heterostructure field effect transistors", Electron. Lett., Vol. 39, No. 11, pp. 877-878, May 2003.
  716. S. J. Chang, M. L. Lee, J. K. Sheu, W. C. Lai, Y. K. Su, C. S. Chang, C. J. Kao, G. C. Chi and J. M. Tsai, "GaN metal-semiconductor-metal photodetectors with low-temperature GaN cap layers and ITO metal contacts", IEEE Electron. Dev. Lett., Vol. 24, No. 4, pp. 212-214, April 2003.
  717. Y. Z. Chiou, Y. K. Su, S. J. Chang and C. H. Chen, "GaN metal semiconductor interface and its applications in GaN and InGaN metal semiconductor metal photodetectors", IEE Proc. - Optoelectron., Vol. 150, No. 2, pp. 115-118, April 2003.
  718. C. S. Chang, S. J. Chang, Y. K. Su, Y. C. Lin, Y. P. Hsu, S. C. Shei, S. C. Chen, C. H. Liu and U. H. Liaw, “InGaN/GaN light emitting diodes with ITO p-contact layers prepared by RF sputtering”, Semicond. Sci. Technol., Vol. 18, No. 4, pp. L21-L23, April 2003.
  719. C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. F. Chen, J. K. Sheu and J. M. Tsai, "GaN-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short period superlattice current spreading layer", Jpn. J. Appl. Phys., Vol. 42, No. 4B, pp. 2270-2272, April 2003.
  720. C. H. Chen, S. J. Chang and Y. K. Su, "High indium content InGaN/GaN multiple quantum well yellowish green light emitting diodes", Jpn. J. Appl. Phys., Vol. 42, No. 4B, pp. 2281-2283, April 2003.
  721. C. H. Kuo, J. K. Sheu, S. J. Chang, Y. K. Su, L. W. Wu, J. M. Tsai, C. H. Liu and R. K. Wu, "n-UV+blue/green/red white light emitting diode lamps", Jpn. J. Appl. Phys., Vol. 42, No. 4B, pp. 2284-2287, April 2003.
  722. M. L. Lee, J. K. Sheu, W. C. Lai, S. J. Chang, Y. K. Su, M. G. Chen, C. J. Kao, G. C. Chi and J. M. Tsai, "GaN Schottky barrier photodetectors with a low-temperature GaN cap layer", Appl. Phys. Lett., Vol. 82, No. 17, pp. 2913-2915, April 2003.
  723. Y. Z. Chiou, J. R. Chiou, Y. K. Su, S. J. Chang, B. R. Huang, C. S. Chang and Y. C. Lin, "The characteristics of different transparent electrodes on GaN photodetectors", Mater. Chem. Phys., Vol. 80, No. 1, pp. 201-204, April 2003.
  724. H. R. Wu, K. W. Lee, T. B. Nian, D. W. Chou, J. J. Huang, Y. H. Wang, M. P. Houng, P. W. Sze, Y. K. Su, S. J. Chang, C. H. Ho, C. I. Chiang, Y. T. Chern, F. S. Juang, T. C. Wen, W. I. Lee and J. I. Chyi, "Liquid phase deposited SiO2 on GaN", Mater. Chem. Phys., Vol. 80, No. 1, pp. 329-333, April 2003.
  725. S. J. Chang, C. H. Chen, Y. K. Su, J. K. Sheu, W. C. Lai, J. M. Tsai, C. H. Liu and S. C. Chen, "Improved ESD protection by combining InGaN/GaN MQW LED with GaN Schottky diode", IEEE Electron. Dev. Lett., Vol. 24, No. 3, pp. 129-131, April 2003.
  726. Y. M. Lin, S. L. Wu, S. J. Chang, S. Koh and Y. Shiraki, "SiGe heterostructure field-effect transistor using V-shaped confining potential well", IEEE Electron. Dev. Lett., Vol. 24, No. 2, pp. 69-71, February 2003.
  727. S. J. Chang, L. W. Wu, Y. K. Su, C. H. Kuo, W. C. Lai, Y. P. Hsu, J. K. Sheu, J. F. Chen and J. M. Tsai, "Si and Zn co-doped InGaN/GaN white light emitting diodes", IEEE Tran. Electron. Dev., Vol. 36, No. 2, pp. 519-521, February 2003.
  728. C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, W. C. Lai, T. C. Wen and J. M. Tsai, "Nitride-based light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short period superlattice tunneling contact layer", IEEE Tran. Electron. Dev., Vol. 36, No. 2, pp. 535-537, February 2003.
  729. Y. C. Lin, S. J. Chang, Y. K. Su, J. F. Chen, S. C. Shei, S. J. Hsu, C. H. Liu, U. H. Liaw and B. R. Huang, “Inductively coupled plasma etching of GaN using Cl2/He gases”, Mater. Sci. Eng. B, Vol. 98, No. 1, pp. 60-64, February 2003.
  730. S. J. Chang, Y. K. Su, Y. Z. Chiou, J. R. Chiou, B. J. Huang, C. S. Chang and J. F. Chen, "Deposition of SiO2 layers on GaN by photo chemical vapor deposition", J. Electrochem. Soc., Vol. 150, No. 2, pp. C77-C80, February 2003.
  731. L. W. Ji, Y. K. Su, S. J. Chang, L. W. Wu, T. H. Fang, J. F. Chen, T. Y. Tsai, Q. K. Xue and S. C. Chen, "Growth of nanoscale InGaN self-assembled quantum dots and their room-temperature photoluminescence", J. Crystal Growth, Vol. 249, No. 1-2, pp. 144-148, February 2003.
  732. Y. Z. Chiou, C. S. Chang, S. J. Chang, Y. K. Su, J. R. Chiou, B. J. Huang and J. F. Chen, "Deposition of SiO2 layers on 4H-SiC by photo chemical vapor deposition", J. Vac. Sci. Technol. B, Vol. 21, No. 1, pp. 329-331, January 2003.
  733. J. K. Sheu, S. J. Chang, C. H. Kuo, Y K. Su, L. W. Wu, Y. C. Lin, J. M. Tsai, R. K. Wu and G. C. Chi, "White light emission from near UV InGaN/GaN LED chip precoated with blue/green/red phosphors", IEEE Photon. Technol. Lett., Vol. 15, No. 1, pp. 18-20, January 2003.
  734. P. W. Chien, S. C. Li, S. L. Wu and S. J. Chang, "Fabricating d-doped layers in silicon by ultra high vacuum chemical vapor deposition", Mater. Chem. Phys. Vol. 77, No. 2, pp. 426-429, January 2003.
  735. J. S. Lee, S. J. Chang, J. F. Chen, S. C. Sun, C. H. Liu and U. H. Liaw, "Effects of O2 thermal annealing on the properties of CVD Ta2O5 thin films", Mater. Chem. Phys., Vol. 77, No. 1, pp. 242-247, January 2003.
  736. Y. C. Lin, S. J. Chang, Y. K. Su, T. Y. Tsai, C. S. Chang, S. C. Shei, S. J. Hsu, C. H. Liu, U. H. Liaw, S. C. Chen and B. R. Huang, “Nitride-based light emitting diodes with Ni/ITO p-type ohmic contacts”, IEEE Photon. Technol. Lett., Vol. 14, No. 12, pp. 1668-1670, December 2002.
  737. H. Tang, J. B. Webb, S. Rolfe, J. A. Bardwell, D. Tomka, P. Coleridge, C. H. Ko, Y. K. Su and S. J. Chang, "GaN/AlGaN two-dimensional electron gas grown by ammonia-MBE on MOCVD GaN template", Phys. Status Solidi B, Vol. 234, No. 3, pp. 822-825, December 2002.
  738. M. L. Lee, J. K. Sheu, L. S. Yeh, M. S. Tsai, C. J. Kao, C. J. Tun, S. J. Chang and G. C. Chi, "GaN p-n junction diode formed by Si ion implantation into p-GaN", Solid State Electron., Vol. 46, No. 12, pp. 2179-2183, December 2002..
  739. Y. Z. Chiou, Y. K. Su, S. J. Chang, Y. C. Lin, C. S. Chang and C. H. Chen, "InGaN/GaN MQW P-N junction photodetectors", Solid State Electron., Vol. 46, No. 12, pp. 2227-2229, December 2002.
  740. Y. K. Su, Y. Z. Chiou, C. S. Chang, S. J. Chang, Y. C. Lin and J. F. Chen, "4H-SiC metal-semiconductor-metal ultraviolet photodetectors with Ni/ITO electrodes", Solid State Electron., Vol. 46, No. 12, pp. 2237-2240, December 2002.
  741. H. Tang, J. B. Webb, P. Coleridge, J. A. Bardwell, C. H. Ko, Y. K. Su and S. J. Chang, “Scattering lifetimes due to interface roughness with large lateral correlation length in AlxGa1-xN/GaN two-dimensional electron gas”, Phys. Rev. B, Vol. 66, No. 24, Art. no. 245305, December 2002.
  742. S. J. Chang, W. C. Lai, J. F. Chen, S. C. Chen, B. R. Huang, C. H. Liu and U. H. Liaw, "Be diffusion in GaN", Mater. Charact., Vol. 49, No. 4, pp. 337-341, November 2002.
  743. S. J. Chang, J. S. Lee, J. F. Chen, S. C. Sun, C. H. Liu, U. H. Liaw and B. R. Huang, "Improvement of electrical and reliability properties of tantalum pentoxide by high density plasma (HDP) annealing in N2O", IEEE Electron. Dev. Lett., Vol. 23, No. 11, pp. 643-645, November 2002.
  744. J. K. Sheu, M. L. Lee, L. S. Yeh, C. J. Kao, C. J. Tun, M. G. Chen, G. C. Chi, S. J. Chang, Y. K. Su and C. T. Lee, "Planar GaN n+-p photodetectors formed by Si implants into p-GaN", Appl. Phys. Lett., Vol. 81, No. 22, pp. 4263-4265, November 2002.
  745. B. R. Huang and S. J. Chang, "The electrical conduction mechanism for the polycrystalline diamond membrane in the voltage range of +-50 V", Mater. Lett., Vol. 56, No. 5, pp. 867-872, November 2002.
  746. C. H. Lee, S. L. Wu, S. J. Chang, A. Miura, S. Koh, Y. Shiraki, "A novel triple d-doped SiGe heterostructure field-effect transistor", Jpn. J. Appl. Phys. Lett., Vol. 41, No. 11A, pp. L1212-L1214, November 2002.
  747. P. W. Chien, S. L. Wu, S. C. Lee, S. J. Chang, H. Miura, S. Koh and Y. Shiraki, "P-type delta doped SiGe/Si heterostructure field-effect transistors", Electron. Lett., Vol. 38, No. 21, pp. 1289-1291, October 2002.
  748. C. H. Ko, Y K. Su, S. J. Chang, W. H. Lan, J. Webb, M. C. Tu and Y. T. Cherng, "Photo-enhanced chemical wet etching of GaN", Mater. Sci. Eng. B, Vol. 96, pp. 43-47, October 2002.
  749. S. J. Chang, Y. K. Su, T. Yang, C. S. Chang, T. P. Chen and K. H. Huang, "AlGaInP/sapphire glue bonded light emitting diodes", IEEE J. Quan. Electron., Vol. 38, No. 10, pp. 1390-1394, October 2002.
  750. Y. K. Su, J. Zhong and S. J. Chang, "A novel vertical cavity surface emitting laser with semiconductor/superlattice distributed Bragg reflectors", IEEE Photon. Technol. Lett., Vol. 14, No. 10, pp. 1388-1390, October 2002.
  751. Y. K. Su, S. J. Chang, C. H. Ko, J. F. Chen, W. H. Lan, W. J. Lin, Y. T. Cherng and J. Webb, "InGaN/GaN light emitting diodes with a p-down structure", IEEE Tran. Electron. Dev., Vol. 49, No. 8, pp. 1361-1366, August 2002.
  752. W. R. Chen, S. J. Chang, Y. K. Su, J. F. Chen, W. H. Lan, W. J. Lin, Y. T. Cherng, C. H. Liu and U. H. Liaw, "ZnCdSeTe-based orange light emitting diode", IEEE Photon. Technol. Lett., Vol. 14, No. 8, pp. 1061-1063, August 2002.
  753. Y. K. Su, C. H. Wu, J. R. Chang, K. M. Wu, H. C. Wang, W. B. Chen, S. J. You and S. J. Chang, "Well width dependence for novel AlInAsSb/InGaAs double barrier resonant tunneling diode", Solid State Electron., Vol. 46, pp. 1109-1111, August 2002.
  754. Y. K. Su, S. J. Chang, C. H. Chen, J. F. Chen, G. C. Chi. J. K. Sheu, W. C. Lai and J. M. Tsai, "GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes", IEEE Sensors Journal, Vol. 2, No. 4, pp. 366-371, July/August 2002.
  755. J. K. Sheu, M. L. Lee, C. J. Tun, C. J. Kao, L. S. Yeh, S. J. Chang and G. C. Chi, "Characterization of Si implants in p-type GaN", IEEE J. Sel. Top. Quan. Electron., Vol. 8, No. 4, pp. 767-772, July/August 2002.
  756. S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. F. Chen and J. M. Tsai, "400-nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes", IEEE J. Sel. Top. Quan. Electron., Vol. 8, No. 4, pp. 744-748, July/August 2002.
  757. W. R. Chen, S. J. Chang, Y. K. Su, J. F. Chen, W. H. Lan, W. J. Lin, Y. T. Cherng, C. H. Liu and U. H. Liaw, "ZnSe epitaxial layers and ZnSSe/ZnSe strain layer superlattices grown by molecular beam epitaxy", Superlattice Microst., Vol. 32, No. 1, pp. 59-63, July 2002.
  758. D. W. Chou, K. W. Lee, J. J. Huang, H. R. Wu, Y. H. Wang, M. P. Houng, S. J. Chang and Y. K. Su, "AlGaN/GaN metal oxide semiconductor heterostructure field-effect transistor based on a liquid phase deposited oxide", Jpn. J. Appl. Phys. Lett., Vol. 41, No. 7A, pp. L748-L750, July 2002.
  759. C. H. Chen, S. J. Chang, Y. K. Su, J. K. Sheu, J. F. Chen, C. H. Kuo and Y. C. Lin, "Nitride-based cascade near white light emitting diodes", IEEE Photon. Technol. Lett., Vol. 14, No. 7, pp. 908-910, July 2002.
  760. K. W. Lee, D. W. Chou, J. J. Huang, H. R. Wu, Y. H. Wang, M. P. Houng, S. J. Chang and Y. K. Su, "GaN MOSFET with liquid phase deposited oxide", Electron. Lett., Vol. 38, No. 15, pp. 829-830, July 2002.
  761. Y. Z. Chiou, Y. K. Su, S. J. Chang, J. F. Chen, C. S. Chang, S. H. Liu, I. C. Lin and C. H. Chen, "Transparent TiN electrodes in GaN metal-semiconductor-metal ultraviolet photodetectors", Jpn. J. Appl. Phys., Vol. 41, No. 6A, pp. 3643-3645, June 2002.
  762. T. C. Wen, S. J. Chang, L. W. Wu, Y. K. Su, W. C. Lai C. H. Kuo, C. H. Chen, J. K. Sheu and J. F. Chen, "InGaN/GaN tunnel injection blue light emitting diodes", IEEE Tran. Electron. Dev., Vol. 49, No. 6, pp. 1093-1095, June 2002.
  763. L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, W. C. Lai, C. H. Kuo, C. H. Chen and J. K. Sheu, "Influence of Si-doping on the characteristics of InGaN/GaN multiple quantum well blue light emitting diodes", IEEE J. Quan. Electron., Vol. 38, No. 5, pp. 446-450, May 2002.
  764. C. H. Kuo, S. J. Chang, Y. K. Su, J. F. Chen, L. W. Wu, J. K. Sheu, C. H. Chen and G. C. Chi, "InGaN/GaN light emitting diodes activated in O2 ambient", IEEE Electron. Dev. Lett., Vol. 23, No. 5, pp. 240-242, May 2002.
  765. C. Y. Su, L. P. Chen, S. J. Chang, B. M. Tseng, D. C. Lin, G. W. Huang, Y. P. Ho, H. Y. Lee, J. F. Kuan, W. Y. Wen, P. Liou, C. L. Chen, L. Y. Leu, K. A. Wen and C. Y. Chang, "A macro model of silicon spiral inductor", Solid State Electron., Vol. 46, No. 5, pp. 759-767, May 2002.
  766. C. H. Ko, Y K. Su, S. J. Chang, T. M. Kuan, C. I. Chiang, W. H. Lan, W. J. Lin and J. Webb, "A p-down InGaN/GaN MQW LED structure grown by MOVPE", Jpn. J. Appl. Phys., Vol. 41, No. 4B, pp. 2489-2492, April 2002.
  767. J. K. Sheu, C. J. Pan, G. C. Chi, C. H. Kuo, L. W. Wu, C. H. Chen, S. J. Chang and Y. K. Su, "White-light emission from InGaN/GaN multi-quantum well light-emitting diodes with Si and Zn codoped active layer", IEEE Photon. Technol. Lett., Vol. 14, No. 4, pp. 450-452, April 2002.
  768. S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu and U. H. Liaw, "InGaN/GaN multiquantum well blue and green light emitting diodes", IEEE J. Sel. Top. Quan. Electron., Vol. 8, No. 2, pp. 278-283, March/April 2002.
  769. C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. K. Sheu and J. F. Chen, "High efficient InGaN/GaN MQW green light emitting diodes with CART and DBR structures", IEEE J. Sel. Top. Quan. Electron., Vol. 8, No. 2, pp. 284-288, March/April 2002.
  770. C. H. Chen, Y. K. Su, S. J. Chang, G. C. Chi, J. K. Sheu, J. F. Chen, C. H. Liu and U. H. Liaw, "High brightness green light emitting diode with charge asymmetric resonance tunneling structure", IEEE Electron. Dev. Lett., Vol. 23, No. 3, pp. 130-132, March 2002.
  771. C. H. Ko, S. J. Chang, Y. K. Su, W. H. Lan, J. F. Chen, T. M. Kuan, Y. C. Huang, C. I. Chiang, J. Webb and W. J. Lin, "On the carrier concentration and Hall mobility in GaN epitaxial layers", Jpn. J. Appl. Phys. Lett., Vol. 41, No. 3A, pp. L226-L228, March 2002.
  772. J. S. Lee, S. C. Sun, S. J. Chang, J. F. Chen, C. H. Liu and U. H. Liaw, "Effects of interfacial oxide layer for the Ta2O5 capacitor after high temperature annealing", Jpn. J. Appl. Phys., Vol. 41, No. 2A, pp. 690-693, February 2002.
  773. J. K. Sheu, C. J. Tun, M. S. Tsai, C. C. Lee, G. C. Chi, S. J. Chang and Y. K. Su, "n+-GaN formed by Si implantation into p-GaN", J. Appl. Phys., Vol. 91, No. 4, pp. 1845-1848, February 2002.
  774. S. J. Chang, Y. K. Su, W. R. Chen, J. F. Chen, W. H. Lan, W. J. Lin, Y. T. Cherng, C. H. Liu and U. H. Liaw, "ZnSTeSe metal-semiconductor-metal photodetectors", IEEE Photon. Technol. Lett., Vol. 14, No. 2, pp. 188-190, February 2002.
  775. S. J. Chang, Y. K. Su, W. R. Chen, J. F. Chen, M. H. Chen, F. S. Juang, W. H. Lan, W. J. Lin, Y. T. Cherng, C. H. Liu and U. H. Liaw, "ZnMgSSe metal-semiconductor-metal visible-blind photodetectors with transparent indium-tin-oxide contact electrodes", Jpn. J. Appl. Phys. Lett., Vol. 41, No. 2A, pp. L115-L117, February 2002.
  776. C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, C. H. Chen and G. C. Chi, "Low temperature activation of Mg-doped GaN in O2 ambient", Jpn. J. Appl. Phys. Lett., Vol. 41, No. 2A, pp. L112-L114, February 2002.
  777. S. J. Chang, J. S. Lee, M. C. Wei, J. F. Chen, C. H. Liu and U. H. Liaw, "Effects of photo-assisted O2 annealing on the properties of (Ba,Sr)TiO3 thin films", J. Vac. Sci. Technol., Vol. 20, No. 1, pp. 107-111, January 2002.
  778. C. Y. Su, L. P. Chen, S. J. Chang, G. W. Huang, D. C. Lin, Y. P. Ho, B. M. Tseng, H. Y. Lee, J. F. Kuan, Y. M. Deng, K. A. Wen and C. Y. Chang, "An automatic macro program for radio frequency MOSFETs characteristics analysis", Microwave Journal, Vol. 44, No. 10, pp. 99-108, October 2001.
  779. J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang and G. C. Chi, "Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer", IEEE Electron. Dev. Lett., Vol. 22, No. 10, pp. 460-462, October 2001.
  780. C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. Y. Chi, C. A. Chang, J. K. Sheu and J. F. Chen, "GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts", IEEE Photon. Technol. Lett., Vol. 13, No. 8, pp. 848-850, August 2001.
  781. C. Y. Su, B. M. Tseng, S. J. Chang and L. P. Chen, "Scalable RF MIS varactor model", Electron. Lett., Vol. 37, No. 12, pp. 760-761, June 2001.
  782. W. C. Lai, S. J. Chang, M. Yokoyama, J. K. Sheu and J. F. Chen, "InGaN/AlInGaN light emitting diodes", IEEE Photon. Technol. Lett., Vol. 13, No. 6, pp. 559-561, June 2001.
  783. K. S. Ramaiah, Y. K. Su, S. J. Chang, F. S. Juang, K. Ohdaira, Y. Shiraki, H. P. Liu, I. G. Chen and A. K. Bhatnagar, "Characterization of Cu doped CdSe thin films gown by vacuum evaporation", J. Crystal Growth, Vol. 224, No. 1-2, pp. 74-82, April 2001.
  784. S. J. Chang, Y. K. Su, J. F. Chen, L. F. Wen and B. R. Huang, "Effects of electron effective mass on the multiquantum barrier structure in AlGaInP laser diodes", IEE Proc. - Optoelectron., Vol. 148, No. 2, pp. 117-120, April 2001.
  785. Y. K. Su, Y. Z. Chiou, F. S. Juang, S. J. Chang and J. K. Sheu, "GaN and InGaN metal-semiconductor-metal photodetectors with different Schottky contact metals", Jpn. J. Appl. Phys., Vol. 40, No. 4B, pp. 2996-2999, April 2001.
  786. C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. K. Sheu and I. C. Lin, "Vertical high quality mirror-like facet of GaN-based devices by reactive ion etching", Jpn. J. Appl. Phys., Vol. 40, No. 4B, pp. 2762-2764, April 2001.
  787. C. Y. Su, L. P. Chen, S. J. Chang, B. M. Tseng, D. C. Lin and H. Y. Lee, "BSIM3v3-based varactor model", Electron. Lett., Vol. 37, No. 8 , pp. 525-527, April 2001.
  788. S. J. Chang, W. R. Chen, Y. K. Su, J. F. Chen, W. H. Lan, C. I. Chiang, W. J. Lin, Y. T. Cherng and C. H. Liu, "Au/AuBe/Cr contact to p-ZnTe", Electron. Lett., Vol. 37, No. 5, pp. 321-322, March 2001.
  789. S. J. Chang, Y. K. Su, T. L. Tsai, C. Y. Chang, C. L. Chiang, C. S. Chang, T. P. Chen and K. H. Huang, "Microwave treatment to activate Mg in GaN", Appl. Phys. Lett., Vol. 78, No. 3, pp. 312-313, January 2001.
  790. C. M. Lin, S. J. Chang, M. Yokoyama, I. N. Lin, J. F. Chen and B. R. Huang, "Field-emission enhancement of Mo-tip field-emitted arrays fabricated by using a redox method", IEEE Electron. Dev. Lett., Vol. 21, No. 12, pp. 560-562, December 2000.
  791. K. S. Ramaiah, Y. K. Su, S. J. Chang, F. S. Juang and C. H. Chen, "Photoluminescence characteristics of Mg- and Si-doped GaN thin films grown by MOCVD technique", J. Crystal Growth, Vol. 220, pp. 405-412, December 2000.
  792. J. S. Lee, S. J. Chang, S. C. Sun, S. M. Jang and M. C. Yu, "Electrical properties of thin gate dielectric grown by rapid thermal oxidation", J. Vac. Sci. Technol., Vol. A18, No. 6, pp. 2986-2991, November/December 2000.
  793. W. C. Lai, M. Yokoyama, S. J. Chang, J. D. Guo, C. H. Sheu, T. Y. Chen, W. C. Tsai, J. S. Tsang, S. H. Chang and S. M. Sze, "Optical and electrical characteristics of CO2 laser treated Mg-doped GaN film", Jpn. J. Appl. Phys. Lett., Vol. 39, No. 11B, pp. L1138-L1140, November 2000.
  794. P. W. Chien, S. L. Wu, S. J. Chang, Y. P. Wang, H. Miura and Y. Shiraki, "Device linear improvement using SiGe/Si heterostructure delta-doped-channel field effect transistor", Jpn. J. Appl. Phys. Lett., Vol. 39, No. 11B, pp. L1149-L1151, November 2000.
  795. C. M. Lin, S. J. Chang, M. Yokoyama and I. N. Lin, "Study of thermal stability in diamond like carbon coated planar electron field emission arrays", J. Vac. Sci. Technol. B, Vol. 18, No. 5, pp. 2424-2426, September/October 2000.
  796. K. S. Ramaiah, V. S. Raja, A. K. Bhatnagar, F. S. Juang, S. J. Chang and Y. K. Su, "Effects of annealing and g-radiation on the properties of CuInSe2 thin films", Mater. Lett., Vol. 45, pp. 251-261, September 2000.
  797. F. S. Juang, S. J. Chang, Y. K. Su, C. C. Cheng and J. K. Sheu, "Ohmic contacts and reactive ion beam etching for p-type GaN", J. Chinese Institute of Electrical Engineering, Vol. 7, No. 3, pp. 203-210, August 2000 (EI,
  798. C. Y. Su, S. L. Wu, S. J. Chang, and L. P. Chen, "Strained Si1-xGex graded channel PMOSFET grown by UHVCVD", Thin Solid Films, Vol. 369, No. 1-2, pp. 371-374, July 2000.
  799. C. Y. Su, L. P. Chen, S. J. Chang, G. W. Huang, Y. P. Ho, B. M. Tseng, D. C. Lin, H. Y. Lee, J. F. Kuan, Y. M. Deng, C. L. Chen, L. Y. Leu, K. A. Wen and C. Y. Chang, "Coplanar probe pad design on the noise figures of 0.35 mm MOSFETs", Electron. Lett., Vol. 36, No. 15, pp. 1280-1281, July 2000.
  800. Y. K. Su, W. R. Chen, S. J. Chang, F. S. Juang, W. H. Lan, A. C. H. Lin and H. Chang, "The red shift of ZnSSe metal-semiconductor-metal light emitting diodes with high injection currents", IEEE Tran. Elec. Dev., Vol. 47, No. 7, pp. 1330-1333, July 2000.
  801. K. S. Ramaiah, V. S. Raja, A. K. Bhatnagar, R. D. Tomlinson, R. D. Pilkington, A. E. Hill, S. J. Chang, Y. K. Su and F. S. Juang, "Optical structural and electrical properties of tin doped indium oxide thin films prepared by spray-pyrolysis technique", Semicond. Sci. Technol., Vol. 15, No. 7, pp. 676-683, July 2000. (EI,
  802. C. Y. Su, S. L. Wu, S. J. Chang and L. P. Chen, "Strained Si1-xGex normal graded channel P-type metal-oxide-semiconductor field-effect-transistor" Jpn. J. Appl. Phys. Lett., Vol. 39, No. 6B, pp. L279-L581, June 2000.
  803. W. R. Chen, S. J. Chang, Y. K. Su, W. H. Lan, A. C. H. Lin and H. Chang, "Reactive Ion Etching of ZnSe, ZnSSe, ZnCdSSe and ZnMgSSe by CH4/H2/Ar and CH4/Ar", Jpn. J. Appl. Phys., Vol. 39, No. 6A, pp. 3308-3314, June 2000.
  804. S. J. Chang, Y. K. Su, F. S. Juang, C. T. Lin, C. D. Chiang and Y. T. Cherng, "Photo-enhanced native oxidation process for Hg0.8Cd0.2Te photoconductors", IEEE J. Quantum Electron., Vol. 36, No. 5, pp. 583-589, May 2000.
  805. F. S. Juang, Y. K. Su, S. M. Chang, S. J. Chang, C. D. Chiang and Y. T. Cherng, "Analysis of the dark current of focal-plane-array Hg1-xCdxTe diode", Mater. Chem. Phys., Vol. 64, No. 2, pp. 131-136, April 2000.
  806. C. M. Lin, S. J. Chang, M. Yokoyama and I. N. Lin, "Effects of redox treatment on diamond-like carbon coated Mo substrates", Jpn. J. Appl. Phys. Lett., Vol. 39, No. 2A, pp. L76-L78, February 2000.
  807. S. L. Wu and S. J. Chang, "Si field-effect transistor with doping dipole in buffer layer", Appl. Phys. Lett., Vol. 75, No. 18, pp. 2848-2850, November 1999. , EI
  808. S. J. Chang, W. R. Chen, Y. K. Su, R. C. Tu, W. H. Lan and H. Chang, "Ohmic contact to p-ZnSe and p-ZnMgSSe", Electron. Lett., Vol. 35, No. 15, pp. 1280-1281, July 1999.
  809. S. L. Wu and S. J. Chang, "High performance delta-modulation-doped Si/SiGe heterostructure FET's grown by MBE", Solid State Electron., Vol. 43, No. 7, pp. 1313-1316, July 1999.
  810. C. M. Lin, S. J. Chang, M. Yokoyama, I. N. Lin, F. Y. Chuang, C. H. Tsai and W. C. Wang, "Enhancement of electron emission characteristics of platform-shaped Mo emitters by diamond-like carbon coatings", Jpn. J. Appl. Phys., Vol. 38, No. 6A, pp. 3700-3704, June 1999.
  811. S. J. Chang, Y. Z. Juang, D. K. Nayak and Y. Shiraki, "Reactive ion etching of Si SiGe in CF4/Ar and Cl2/BCl3/Ar discharges", Mater. Chem. Phys., Vol. 60, No. 1, pp. 22-27, July 1999.
  812. C. M. Lin, S. J. Chang, M. Yokoyama, F. Y. Chuang, W. C. Wang and I. N. Lin, "Enhancement on diamondlike carbon coated planar electron field emission array using Au-precoating", Appl. Surf. Sci., Vol. 142, No. 1-4, pp. 499-503, April 1999.
  813. F. S. Juang, Y. K. Su, S. J. Chang, S. M. Chang, F. S. Shu, C. D. Chiang, Y. T. Cherng and T. P. Sun, "Dark currents in HgCdTe photodiodes passivated with ZnS/Cds", J. Electrochem. Soc., Vol. 146, No. 4: pp. 1540-1545, April 1999.
  814. C. M. Lin, S. J. Chang, M. Yokoyama, F. Y. Chuang,C. H. Tsai, W. C. Wang and I. N. Lin, "Electron field emission characteristics of planar field emission array with diamondlike carbon electron emitters", Jpn. J. Appl. Phys., Vol. 38, No. 2A, pp. 890-893, February 1999.
  815. S. L. Wu, T. T. Han, Y. P. Wang and S. J. Chang, "An inverted boron d-doped high hole mobility transistor (HHMT) with a Si0.4Ge0.6 quantum well", J. Appl. Phys. Lett., Vol. 37, No. 11A, pp. L1290-L1292, November 1998.
  816. J. K. Sheu, Y. K. Su, S. J. Chang, G. C. Chi, K. B. Lin, C. C. Liu and C. C. Chiou, "Electrical derivative characteristics of ion implanted AlGaInP/GaInP multi-quantum well lasers", Solid State Electron., Vol. 42, No. 10, pp. 1867-1869, October 1998.
  817. J. K. Sheu, Y. K. Su, S. J. Chang, M. J. Jou and G. C. Chi, "Investigation of wafer-bonded (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes", IEE Proc. - Optoelectron., Vol. 145, No. 4, pp. 248-252, August 1998.
  818. Y. Z. Juang, Y. K. Su, S. J. Chang, D. F. Huang and C. S. Chang "Reactive ion etching for AlGaInP/GaInP laser structure", J. Vac. Sci. Technol., Vol. A16, No. 4, pp. 2031-2036, July/August 1998.
  819. S. J. Chang and C. S. Chang, "650nm AlGaInP/GaInP compressively strained multi-quantum well light-emitting diodes", Jpn. J. App. Phys. Lett., Vol. 37, No. 6A, pp. L653-L655, June 1998.
  820. S. J. Chang and C. S. Chang, "AlGaInP compressively strained multi-quantum well light-emitting diodes for polymer fiber applications", IEEE Photon. Techol. Lett., Vol. 10, No. 6, pp. 772-774, June 1998.
  821. S. J. Chang and C. S. Chang, "642nm AlGaInP laser diodes with a tensile strain barrier cladding layer", IEEE Photon. Techol. Lett., Vol. 10, No. 5, pp. 651-653, May 1998.
  822. Y. K. Su, W. L. Li, S. J. Chang, C. S. Chang and C. Y. Tsai, "High performance 670nm AlGaInP/GaInP visible strained quantum well lasers", IEEE Tran. Electron. Dev., Vol. 45, No. 4, pp. 763-767, April 1998.
  823. L. P. Chen, Y. C. Chan, S. J. Chang, G. W. Huang and C. Y. Chang, "Direct oxidation of Si1-xGex layers using vacuum-ultra-violet light radiation in oxygen", Jpn. J. Appl. Phys. Lett., Vol. 37, No. 2A, pp. L122-L124, February 1998.
  824. S. J. Chang, D. K. Nayak and Y. Shiraki, "1.54mm electroluminescence from erbium doped SiGe light emitting diodes", J. Appl. Phys., Vol. 83, No. 3, pp. 1426-1428, February 1998.
  825. R. C. Tu, Y. K. Su, D. Y. Yin, C. F. Li, Y. S. Huang, W. H. Lan, S. L. Tu, S. J. Chang, S. C. Chou and W. C. Chou, "Contactless electroluminescence study of strained Zn0.79Cd0.21Se/ZnSe double quantum wells", J. Appl. Phys., Vol. 83, No. 2, pp. 1043-1048, January 1998.
  826. C. S. Chang, Y. K. Su, S. J. Chang, P. T. Chang, Y. R. Wu, K. H. Huang and T. P. Chen, "High brightness AlGaInP 573nm light-emitting diode with a chirped multi-quantum barrier", IEEE J. Quan. Electon., Vol. 34, No. 1, pp. 77-83, January 1998.
  827. W. L. Li, Y. K. Su, S. J. Chang, C. S. Chang and C. Y. Tsai, "Design of AlGaInP visible lasers with a low vertical divergence angle", Solid State Electron., Vol. 42, No. 1, pp. 87-90, January 1998.
  828. S. J. Chang, C. S. Chang, Y. K. Su, P. T. Chang, Y. R. Wu, K. H. Huang and T. P. Chen, "AlGaInP multi-quantum well light-emitting diodes", IEE Proceeding – Optoelectron., Vol. 144, No. 6, pp. 405-409, December 1997.
  829. W. L. Li, Y. K. Su, S. J. Chang and C. Y. Tsai, "A novel waveguide structure to reduce beam dispersion and threshold current in GaInP/AlGaInP visible quantum well lasers", Appl. Phys. Lett., Vol. 71, No. 16, pp. 2245-2247, October 1997.
  830. S. J. Chang, C. S. Chang, Y. K. Su, P. T. Chang, Y. R. Wu, K. H. Huang and T. P. Chen, "AlGaInP yellow-green light-emitting diodes with a tensile strain barrier cladding layer", IEEE Photon. Techol. Lett., Vol. 9, No. 9, pp. 1191-1201, September 1997.
  831. C. T. Lin, Y. K. Su, S. J. Chang, H. T. Huang, S. M. Chang and T. P. Sun, "Effects of passivation and extraction trap density on the 1/f noise of HgCdTe photoconductive detector", IEEE Photon. Techol. Lett., Vol. 9, No. 2, pp. 232-234, February 1997.
  832. S. J. Chang, C. S. Chang, Y. K. Su, P. T. Chang, Y. R. Wu, K. H. Huang and T. P. Chen, "Chirped GaAs/AlAs distributed Bragg reflectors for high brightness yellow-green light-emitting diodes", IEEE Photon. Techol. Lett., Vol. 9, No. 2, pp. 182-184, February 1997.
  833. S. J. Chang, Y. C. Yin, C. M. Lin and A. Y. G. Fuh, "Relaxation time of polymer ball type PDLC films", Liq. Cryst., Vol. 21, No. 5, pp. 707-711, November 1996.
  834. S. J. Chang, J. K. Sheu, Y. K. Su, M. J. Jou and G. C. Chi, "AlGaInP/GaP light emitting diodes fabricated by direct bonding technology", Jpn. J. Appl. Phys., Vol. 35, No. 8, pp. 4199-4202, August 1996.
  835. S. J. Chang, C. M. Lin and A. Y. G. Fuh, "Studies of polymer ball type polymer dispersed liquid crystal films", Liq. Cryst., Vol. 21, No. 1, pp. 19-23, July 1996.
  836. C. T. Lin, Y. K. Su, H. T. Huang, S. J. Chang, G. S. Chen, T. P. Sun and J. J. Luo, "Electrical properties of the stacked ZnS/photo-enhanced-native-oxide passivation for HgCdTe photodiodes", IEEE Photon. Techol. Lett., Vol. 8, No. 5, pp. 676-678, May 1996.
  837. S. J. Chang, C. M. Lin and A. Y. G. Fuh, "Effects of photoinitiator on the properties of polymer ball type PDLC films", Jpn. J. Appl. Phys., Vol. 35, No. 4A, pp. 2180-2183, April 1996.
  838. Y. K. Su, C. T. Lin, H. T. Huang, S. J. Chang, T. P. Sun, G. S. Chen and J. J. Luo, "The electrical properties of high quality stacked CdTe/photo-enhanced-native-oxide for HgCdTe passivation", Jpn. J. Appl. Phys., Vol. 35, No. 2B, pp. 1165-1167, February 1996.
  839. C. T. Lin, S. J. Chang, D. K. Nayak and Y. Shiraki, "The properties of SiO2 films using direct photo chemical vapor deposition on strained SiGe layer", Appl. Surface Sci., Vol. 92, pp. 193-197, February 1996.
  840. S. J. Chang, "Neodymium-doped GaAs light emitting diodes", J. Appl. Phys., Vol. 78, No. 6, pp. 4279-4281, September 1995.
  841. S. J. Chang, D. K. Nayak and Y. Shiraki, "Photoluminescence of erbium implanted in SiGe", Jpn. J. Appl. Phys., Vol. 34, No.10, pp. 5633-5636, October 1995.
  842. A. Y. G. Fuh, C. Y. Huang, M. S. Tsai, G. L. Lin and S. J. Chang, "Studies of polymer stabilized cholesteric liquid crystal texture films", Chinese J. Phys., Vol. 33, No. 3, pp. 291-302, June 1995.
  843. H. Kuan, Y. K. Su, S. J. Chang and W. J. Tzou, "Photoreflectance study of InP and GaAs by MOCVD using tertiarybutylphosphine and tertiarybutylarsine source", Jpn. J. Appl. Phys., Vol. 34, No. 4A, pp. 1831-1832, April 1995.
  844. C. T. Lin, S. J. Chang, D. K. Nayak and Y. Shiraki, "Deposition of SiO2 layer on strained SiGe substrate", Jpn. J. Appl. Phys., Vol. 34, No. 1, pp. 72-74, January 1995.
  845. S. J. Chang and S. Chiao, "Effects of matrix impedance on the properties of polymer dispersed liquid crystal cells", Jpn. J. Appl. Phys., Vol. 34, No. 8A, pp, 4074-4078, August 1995.
  846. S. J. Chang, Y. K. Su and Y. P. Shei, "High quality ZnO thin films on InP substrates prepared by RF magnetron sputtering (I) - Material study", J. Vac. Sci. Technol., Vol. A13, No. 2, pp. 381-384, March 1995.
  847. S. J. Chang, Y. K. Su and Y. P. Shei, "High quality ZnO thin films on InP substrates prepared by RF magnetron sputtering (II) - Surface acoustic wave device fabrication", J. Vac. Sci. Technol., Vol. A13, No. 2, pp. 385-388, March 1995.
  848. S. J. Chang, S. Chiao, W. J. Lai, C. M. Lin and A. Y. G. Fuh, "Polymer dispersed liquid crystal display device for projection high definition television application", Macromolecular Symposia, Vol. 84, No. 1, pp. 159-163, July 1994.
  849. S. J. Chang and K. Takahei, "Studies of GaAs:Er impact excited electroluminescence devices", Appl. Phys. Lett., Vol. 65, No. 4, pp. 433-435, July 1994.
  850. J. D. Lin, Y. K. Su, S. J. Chang, M. Yokoyama and F. Y. Juang, "Passivation with SiO2 on HgCdTe by direct photo-CVD", J. Vac. Sci. Technol., Vol. A12, No. 1, pp. 7-11, January 1994.
  851. S. J. Chang and K. Takahei, "Optical properties of the dominant Nd center in GaP", J. Appl. Phys., Vol. 73, No. 2, pp. 943- 947, January 1993.
  852. J. Nakata, S. J. Chang and K. Takahei, "Direct evidence of Er atoms occupying an interstitial site in metalorganic chemical vapor deposition-grown GaAs:Er", Appl. Phys. Lett., Vol. 61, No. 22, pp. 2665-2667, November 1992.
  853. A. Taguchi, S. J. Chang and K. Takahei, "Direct verification of energy back transfer from Yb 4f-shell to InP host", Appl. Phys. Lett., Vo. 60, No. 8, pp. 965-967, February 1992.
  854. S. J. Chang, H. Nakagome and K. Takahei, "Luminescence lifetime studies of Nd-doped GaP and GaAs", J. Lumin., Vol. 52, No. 5-6, pp. 251-257, June 1992.
  855. P. M. Adams, R. C. Bowman, Jr., C. C. Ahn, S. J. Chang, V. Arbet-Engels, M. A. Kallel and K. L. Wang, "Structure characterization of GemSin strained layer superlattices", J. Appl. Phys., Vol. 71, No. 9, pp. 4305-4313, May 1992.
  856. S. J. Chang, H. Nakagome and K, Takahei, "Observation of luminescence from a highly concentrated Nd center in GaP by direct optical excitation and comparison with Nd centers excited under host excitation", Jpn. J. Appl. Phys. 30 (1991) 3788
  857. S. J. Chang, H. Nakagome and K. Takahei, "Luminescence intensity and lifetime dependence on temperature for Nd-doped GaP and GaAs", Appl. Phys. Lett., Vol. 58, No. 21, pp. 2390-2392, May 1991.
  858. A. Bindal, K. L. Wang, S. J. Chang and M. A. Kallel, "Major implantation induced defects in conventional and rapid thermal annealed, silicon implanted LEC-grown GaAs", J. Electrochem. Soc., Vol. 138, No. 1, pp. 222-226, January 1991.
  859. S. J. Chang, V. Arbet, K. L. Wang, R. C. Bowman, Jr., P. M. Adams, D. Nayak and J. C. S. Woo, "Studies of interdiffusion in GemSin strained layer superlattices", J. Electron. Mater., Vol. 19, pp. 125-130 1990.
  860. V. Arbet, S. J. Chang and K. L. Wang, "Investigation of GemSin strained monolayer superlattices by Rheed, Raman and X-ray technology", Thin Solid Films, Vol. 183, pp. 57-63. December 1989.
  861. S. J. Chang, C. F. Huang, M. A. Kallel, K. L. Wang, R. C. Bowman, Jr. and P. M. Adams, "Study of ultra-thin Ge/Si strain layer superlattices", J. Crystal Growth, Vol. 95, No. 1-4, pp. 451-454, February 1989.
  862. S. J. Chang, K. L. Wang, R. C. Bowman, Jr. and P. M. Adams, "Interdiffusion in a symmetrically strained Ge/Si superlattice", Appl. Phys. Lett., Vol. 54, No. 13, pp. 1253-1255, March 1989.
  863. A. Bindal, K. L. Wang, S. J. Chang, M. A. Kallel and P. K. Chu, "A process simulation model for silicon ion implantation in undoped LEC-grown GaAs", J. Electrochem. Soc., Vol. 136, No. 8, pp. 2414-2420, August 1989.
  864. A. Bindal, K. L. Wang, S. J. Chang, M. A. Kallel, O. M. Stafsudd, "On the nature of silicon activation efficiency in LEC-grown GaAs by photoluminescence", J. Appl. Phys., Vol. 65, No. 3, pp. 1246-1252, February 1989.
  865. S. J. Chang, C. F. Huang, M. A. Kallel, K. L. Wang, R. C. Bowman, Jr. and P. M. Adams, "Growth and characterization of Ge/Si strained layer superlattices", Appl. Phys. Lett., Vol. 53, No. 19. pp. 1835-1837, November 1988.
  866. S. J. Chang, M. A. Kallel, K. L. Wang, R. C. Bowman, Jr. and P. Chow, "Study of MBE-grown GexSi1-x/Si layers by Raman scattering", J. Appl. Phys., Vol. 64, No. 7, pp. 3634-3636, October 1988.
Conference
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  1. S. J. Chang "GaN-based ultraviolet photodetectors and solar cells" 2015 IEEE International Conference on Optoelectronics and Microelectronics (2015 ICOM), in Changchun, China
  2. S. J. Chang "Light output power enhancements of green light-emitting diodes by digital InN/GaN growth thick InGaN wells" SPIE Photonics West 2015, in San Francisco, USA
  3. S. J. Chang "Growth and characterization of ZnSe/CdSe multi-quantum disks and the fabrication of ZnSe-based photodetectors" 8th International Conference on Materials for Advanced Technologies (ICMAT 2015), in Singapore
  4. S. J. Chang "GaN-based MQW LEDs with tunnel-junction-cascaded active region" 6th International Symposium on Growth of III-Nitrides (ISGN-6) 2015, in Hamamatsu, Japan
  5. S. J. Chang "Ion implantation technology for the fabrication of GaN-based LEDs" 35th Progress in Electromagnetic Research Symposium 2014(PIERS2014), in Guangzhou, China
  6. S. J. Chang "Growth and device applications for CuO nanowires" 2014 Collective Conference on Materials Research (CCMR2014), in Incheon, Korea
  7. S. J. Chang "GaN-based LEDs fabricated by ion implantation technology" 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2014), in Guilin, China
  8. S. J. Chang "β-Ga2O3 solar-blind photodetectors prepared on GaN/sapphire template" 2013 Asia-Pacific Workshop on Widegap Semiconductor (APWS2013), in Tamsui, New Taipei City, Taiwan
  9. S. J. Chang "GaN-based LEDs with high light extraction efficiency" Asia Communications and Photonics Conference 2012 (ACP2012), in Guangzhou, China
  10. S. J. Chang "Lasers used for the fabrication of LED chips" LED and Green Lighting Seminar 2012, in Seoul, Korea
  11. S. J. Chang "GaN-based LEDs with high light extraction efficiency" International conference on Electronic Materials and Nanotechnology for Green Environment 2012 (ENGE2012), in Jeju, Korea
  12. S. J. Chang "Enhanced light extraction of GaN-based LEDs" 2012 International Conference on Optoelectronics and Microelectronics (2012 ICOM),in Changchun, China
  13. S. J. Chang "GaN-based LEDs with air voids prepared by laser scribing and chemical etching" SPIE Photonics West 2012, in San Francisco, USA
  14. S. J. Chang "Lasers used for the fabrication of LED chips" IEEE 2011 Academic Symposium on Optoelectronics & Microelectronics Technology (ASOMT 2011), in Harbin, China
  15. S. J. Chang "Growth of ZnSe nanowires and ZnSe-based mulitquantum disks prepared by molecular beam epitaxy" 4th IEEE International NanoElectronics Conference 2011 (INEC 2011), in Taoyuan, Taiwan
  16. S. J. Chang "GaN-based LEDs with air voids prepared by laser scribing and chemical etching" International Electron Devices and Materials Symposium 2011 (IEDMS 2011), in Taipei, Taiwan
  17. S. J. Chang "A β-Ga2O3 solar-blind photodetector prepared by furnace oxidization of GaN thin film" 2010 International Conference on Optics and Photonics in Taiwan (OPT2010), in Tainan, Taiwan
  18. S. J. Chang "Solar-blind β-Ga2O3 nanowire photodetectors"Harbin, China IEEE 2010 Academic Symposium on Optoelectronics & Microelectronics Technology (ASOMT2010), in Harbin, China
  19. S. J. Chang "ZnO nanowires: Materials growth and device applications" IUPAC 5th International Symposium on Novel Materials and Synthesis (NMS-V 2009) in Shanghai, China
  20. S. J. Chang "The challenge of commercialized crystalline Si solar cell" 2nd IEEE Electron System-Integration Technology Conference (ESTC 2008), in Greenwich, London, UK
  21. S. J. Chang "GaN-based light emitting diodes with micro/nano structure" 8th Emerging Information and Technology Conference (EITC 2008), in Tainan, Taiwan
  22. S. J. Chang "High-brightness GaN-based light emitting diodes" 2nd Advanced Display and Optoelectronics Technology Workshop 2008 (ADOT 2008), in Daegu, Korea
  23. S. J. Chang "GaN-based devices prepared on Si substrates" IEEE 2008 Academic Symposium on Optoelectronics & Microelectronics Technology (ASOMT2008), in Harbin, China
  24. S. J. Chang "ESD reliability of nitride-based LEDs" The 5th International Workshop on Industrial Technologies for Optoelectronic Semiconductors (IWITOS’07), in Seoul, Korea
  25. S. J. Chang "ZnO nanowire-based gas sensors" 7th Emerging Information and Technology Conference (EITC 2007), in Princeton, USA
  26. S. J. Chang "GaN-based metal-oxide-semiconductor heterostructure field effect transistors (MOSHFETs)" 6th Topical Workshop on Heterostructure Microelectronics (TWHM 2005), in Awajishima Hyogo, Japan
  27. S. J. Chang "Growth of vertical ZnO-based nanowires on glass substrate" 2nd Asia-Pacific Workshop on Widegap Semiconductors (APWS 2007), in Hsinchu, Taiwan
  28. S. J. Chang "InGaN/GaN MQW LEDs with ITO-based transparent upper contact layers" 5th International Symposium on Blue Lasers and LEDs (ISBLLED2004), in Gyeongju, Korea
  29. S. J. Chang and S. L. Wu "Si1-xGex channel field effect transistors using d doping technique" First International Workshop on New Group IV (Si-Ge-C) Semiconductors 2001, in Kofu, Japan, 2001
  30. S. J. Chang "Strained Si1-xGex graded channel PMOSFET grown by UHV/CVD" International Joint Conf. on Silicon Epitaxy and Heterostructure 1999, in Zao, Japan
Patent
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  1. R. Y. Yang, H. Y. Chang and S. J. Chang, "Photochemical solar cells with thermal isolation capability", ROC patent No. I 430460 (2014)
  2. Y. K. Su, S. J. Chang, Y. Z. Chiou, C. K. Wang and T. K. Lin, "Photodetector and method for manufacturing the same", ROC patent No. 094111075 (2007)
  3. Y. H. Wang, M. P. Hong, Y. K. Su, S. J. Chang, H. R. Wu and J. Y. Wu, "Fabrication method for GaN MOSFETs", ROC patent No. 169680(2003)
  4. Y. K. Su, C. H. Chen, S. J. Chang and J. K. Sheu, "Structure of GaN MSM UV photodetector and its fabrication method", ROC patent No. 169681 (2002)
  5. F. S. Juang, Y. K. Su and S. J. Chang, "A modified suceptor structure for epitaxial wafers", ROC patent No. 186781 (2002)
  6. S. J. Chang, Y. K. Su and W. R. Chen, "Ohmic contact structure of II-VI semiconductor and its fabrication process", US patent No. 6469319B1 (2002)
  7. F. S. Juang, Y. K. Su and S. J. Chang, "A modified water cooled gas nozzle", ROC patent No. 180792 (2002)
  8. Y. K. Su, C. T. Lin, S. J. Chang, H. T. Huang, S. M. Chang and T. P. Sun, "Low noise HgCdTe FIR photodetector and its fabrication method", ROC patent No. 120926 (2001)
  9. Y. K. Su, S. J. Chang and W. R. Chen, "Ohmic contact structure of II-VI semiconductor and its fabrication method", ROC patent No. 132585(2001)
  10. Y. K. Su, S. M. Chen, S. J. Chang and C. L. Lin, "Fabrication of InAs and GaSb related photo-detectors, laser diodes and NDR devices by MOCVD, ROC patent No. 104113 (1999)
  11. Y. K. Su, W. L. Li, S. J. Chang and C. Y. Tsai, "Design of passive waveguide for minimization of transverse beam dispersion in GaInP/AlGaInP visible quantum well lasers", ROC patent No. 101681 (1999)
  12. Y. K. Su, W. L. Li, S. J. Chang and C. Y. Tsai, "Red semiconductor laser of low beam divergence", US patent No. 5923689 (1999)
  13. Y. K. Su, C. Y. Tsai and S. J. Chang, "A new high efficiency NIP GaInP solar cell", US patent No. 5911839 (1999)
  14. C. Y. Tsai, Y. K. Su and S. J. Chang, "A new high efficiency NIP GaInP solar cell", ROC patent No. 130666 (1998)
  15. A. Taguchi, K. Takahei and S. J. Chang, "Quantum well structure", Japanese Patent No. H3-194770 (1991)
  16. K. Takahei, H. Nakagome, A. Taguchi and S. J. Chang, "Crystals with impurities and their manufacturing methods", Japanese Patent No. H2-288659 (1990)
Others
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Projects
  1. 103年 在不同基板上製作氮化鎵光電積體電路之製程開發及特性研究
  2. 103年 高效率(大於200lm/W)發光二極體關鍵材料與零組件之開發(1/2)
  3. 103年 成功大學 米標章檢測實驗室計畫
  4. 102年 國立成功大學奈米標章檢測實驗室計畫
  5. 102年 高效率(大於200 lm/W)發光二極體光源模組開發
  6. 102年 氮化鋁鎵系列近紫外光發光二極體提升主動層內電子電洞對復合效率之研究 共同主持人
  7. 102年 高銦含量氮化物半導體之光電元件研究─總計畫暨子計畫一:高銦含量氮化物半導體太陽能電池元件之製作與特性分析
  8. 101年 高銦含量氮化物半導體之光電元件研究--總計畫暨子計畫一:高銦含量氮化物半導體太陽能電池元件之製作與特性分析
  9. 101年 成功大學奈米標章檢測實驗室計畫
  10. 101年 氮化鎵系列發光二極體因極化導致亮度衰減之探討以及其改善方法
  11. 101年 單一整合型計畫:奈米科技前瞻人才培育整合型計畫(1/3)
  12. 101年 利用物理氣相沉積法在不同基板上製作氮化鋁緩衝層薄膜之研製並應用於氮化鎵系列紫外光檢測器及發光二極體
  13. 101年 應用於次世代白色固態照明之新穎性KCaPO4: Sm3+螢光粉之研究
  14. 100年 氮化鎵發光二極體亮度下滑效應之研究與改善
  15. 100年 氮化鎵系列發光二極體在超高電流密度操作下其發光效率驟減之研究與改善
  16. 100年 國立成功大學奈米標章檢測實驗室計畫
  17. 100年 具晶圓級封裝技術之高內部量子效率與低效率下降率之氮化鎵發光二極體開發計畫(1/2)
  18. 100年 南台灣奈米科技核心設施服務計畫-成功大學(3/3)
  19. 100年 高功率紫外光氮化鋁銦鎵發光二極體之研製
  20. 99年 四元InAlGaN之磊晶成長與光電元件之研製
  21. 99年 南台灣奈米科技核心設施服務計畫-成功大學(2/3)
  22. 99年 國立成功大學奈米標章檢測實驗室計畫
  23. 99年 氧化鋅薄膜通電特性研究:通電誘發界面擴散機制與含奈米線薄膜在電熱效應下之組織演變及光電特性
  24. 98年 具晶圓級封裝技術之高內部量子效率與低效率下降率之氮化鎵發光二極體開發計畫
  25. 98年 南台灣奈米科技核心設施服務計畫-成功大學(1/3)
  26. 98年 成功大學奈米標章檢測實驗室計畫
  27. 98年 在不同基板成長非極性氮化鎵光電元件研究--總計畫:在不同基板成長非極性氮化鎵光電元件研究
  28. 98年 非極性氮化系列藍綠光發光二極體之研製
  29. 98年 在不同基板成長非極性氮化鎵光電元件研究--子計畫一:以圖案化鋁酸鋰基板成長無極性氮化鎵系列光電元件
  30. 97年 南台灣奈米科技核心設施服務計畫(3/3)
  31. 97年 成功大學奈米標章測試實驗室計畫
  32. 97年 60 GHz無線生醫感測網路晶片系統(3/3)
  33. 96年 60 GHz無線生醫感測網路晶片系統(2/3)
  34. 96年 南台灣奈米科技核心設施服務計畫(2/3)
  35. 96年 以創新之方法研製氮化鎵紫外光帶通檢測器
  36. 96年 氮化銦系列光檢測器與太陽能電池之光電元件之研製
  37. 95年 在矽基板上研製氮化鎵系列光電元件--總計畫:在矽基板上研製氮化鎵系列光電元件
  38. 95年 以鎢及鎢化鈦透明金屬電極應用於氮化鎵紫外光檢測器之研製
  39. 95年 在矽基板上研製氮化鎵系列光電元件--子計畫一:在矽基板上以MOCVD方式成長氮化鎵系列光電元件
  40. 95年 氮化鎵藍光面射型雷射二極體之研製--子計畫一:氮化鎵藍光面射型雷射磊晶技術之研究(3/3)
  41. 95年 南台灣奈米科技核心設施服務計畫(1/3)
  42. 95年 60 GHz無線生醫感測網路晶片系統(1/3)
  43. 94年 氮化物半導體系列白光發光二極體照明科技整合計畫--子計畫二:高功率大面積氮化鎵白光發光二極體之研製(3/3)
  44. 94年 氮化鎵藍光面射型雷射二極體之研製--子計畫一:氮化鎵藍光面射型雷射磊晶技術之研究(2/3)
  45. 93年 提升產業技術及人才培育研究計畫-選擇性射極太陽電池研製
  46. 93年 氮化鎵藍光面射型雷射二極體之研製-子計畫一:氮化鎵藍光面射型雷射磊晶技術之研究(1/3)
  47. 93年 氮化物半導體系列白光發光二極體照明科技整合計畫-子計畫二:高功率大面積氮化鎵白光發光二極體之研製(2/3)
  48. 93年 南部科學園區路竹基地專案--有機無機量子點白光顯示元件
  49. 93年 子計畫二:高功率大面積氮化鎵白光發光二極體之研製(2/3)
  50. 92年 電子材料工程教育與研究(3/3)
  51. 92年 硒化鋅系列高亮度藍光發光二極體及照明白光光源之研製
  52. 92年 氮化物半導體系列白光發光二極體照明科技整合計畫--子計畫二:高功率大面積氮化鎵白光發光二極體之研製(1/3)
  53. 92年 先進網印技術及螢光粉在太陽能電池製程之應用
  54. 92年 氮化鎵系列雷射與白光光源及高頻元件之研製--子計畫一:氮化鎵系列高頻元件之研製(3/3)
  55. 92年 氮化鎵系列雷射與白光光源及高頻元件之研製--總計畫:氮化鎵系列雷射與白光光源及高頻元件之研製(3/3)
  56. 91年 以直接光激回火改善結晶矽太陽電池特性
  57. 91年 氮化鎵系列雷射與白光光源及高頻元件之研製─子計畫一:氮化鎵系列高頻元件之研製(2/3)
  58. 91年 氮化鎵系列雷射與白光光源及高頻元件之研製─總計畫:氮化鎵系列雷射與白光光源及高頻元件之研製(2/3)
  59. 91年 電子材料工程教育與研究(2/3)
  60. 91年 利用材料修飾與元件設計製作高放射功率與低耗電率之高分子發光二極體
  61. 91年 國科會補助之成功大學微機電南區研究中心專案計畫
  62. 91年 矽鍺元件之研製與矽鍺元件可靠度之研究
  63. 90年 微機電南區研究中心
  64. 90年 利用材料修飾與元件設計製作高放射功率與低耗電率之高分子發光二極體
  65. 90年 電子材料工程教育與研究(1/3)
  66. 90年 矽鍺材料之磊晶成長與元件可靠度測試
  67. 90年 GAN光電及微波元件之研製─子計畫三:氮化鎵場效電晶體之研製(3/3)
  68. 90年 氮化鎵光電及微波元件之研製─總計畫:氮化鎵光電及微波元件之研製(3/3)
  69. 90年 氮化鎵系列雷射與白光光源及高頻元件之研製─子計畫一:氮化鎵系列高頻元件之研製(1/3)
  70. 90年 氮化鎵系列雷射與白光光源及高頻元件之研製─總計畫:氮化鎵系列雷射與白光光源及高頻元件之研製(1/3)
  71. 89年 氮化鎵光電及微波元件之研製(1/3)─總計畫
  72. 89年 GAN光電及微波元件之研製(1/3)─子計畫三:氮化鎵場效電晶體之研製
  73. 89年 以有機化學汽相沉積法研製銻砷化銦/銻化鎵紅外光檢測器
  74. 89年 高效率半導體光能轉換器之研製
  75. 89年 GAN光電及微波元件之研製(2/3)─子計畫三:氮化鎵場效電晶體之研製
  76. 89年 氮化鎵光電及微波元件之研製(2/3)─氮化鎵光電及微波元件之研製(2/3)-總計畫
  77. 89年 低漏電流氧化鉭薄膜之製程研究
  78. 89年 矽鍺高平面摻雜通道場效電晶體之研製
  79. 89年 降低氧化鉭漏電流之低溫光激法
  80. 89年 以MOCVD法研製ALGAINP可見光雷射二極體
  81. 89年 矽鍺高DELTA摻雜調變式量子井場效電晶體之研製
  82. 88年 以UHV-CVD技術成長矽鍺雙極位障量子井場效電晶體之研製
  83. 88年 以MOCVD法研製ALGAINP可見光發光二極體
  84. 87年 南科專案重點補助研究計畫:積體電路製造環境之建立與技術之研發
  85. 87年 以RIE方法研製多層 -摻雜型之磷化銦鎵/砷化銦鎵高電子移動率功率元件
  86. 86年 III-V族紅光半導體雷射之開發與製作(2/2)
  87. 86年 以MOCVD成長ALGAINP磊晶層並以晶片接著法製作ALGAINP/GAP發光二極体
  88. 85年 產學合作計畫:三-五族紅光半導體雷射之開發與製作(1/2)
  89. 85年 以MOCVD系統成長AlGaInP/GaAs之高速及電元件研究(III)
  90. 85年 以有機金屬氣相磊晶法研製InAs及GaSb相關之光檢測器,雷測二極體與負微分電阻元件(2/2)
  91. 84年 以有機金屬氣相磊晶法研製InAs及GaSb相關之光檢測器,雷測二極體與負微分電阻元件 (1/2)
  92. 84年 光電工程與微波通訊教育改進計畫─光電工程與微波通訊教育改進計畫:子計畫二:雷射工程教育改進研究計畫
  93. 82年 以直接勵起的方式來激發三-五族半導體中的稀土族元素及其應用
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104
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103
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謝君儀   張立揚   連思源   曾濟彬   張筑珽   翁梃嘉   陳俊諺
104
鄭世安   沈尚鋒   蘇柏仁   林承緯   張曼妤   黃翊慈   蔡瑋鴻
103
陳昱鴻   鄧杉   魏志諭   陳科廷   劉育銘
102
艾登仁   林泓旭   吳政儒   王 翔   魏志諭   阮彥銘   吳政儒   林泓旭   陳科廷   林宥宏   蕭亦翔   溫承樺   陳子祥   莊竣堡   張鈞博   劉欣   黃騰緯   華元甫   李志偉   郭?瑞   黃偉志
101
楊宗翰   呂宗翰   馮雅聖   洪國欽   王駿穎   陳瑞億   許東龍   王英樹   林諧彥
100
陳冠宇   蘇筱棠   曾正賢   施三雄   張竣榮   張峰銘   吳長侶   許家龍   王明冬   郭文杰   廖彩攸   黃冠傑   詹晴堯   吳昱陞   廖思豪   許育榕   吳雅玲   楊淳博
Honors
  1. 2015年 光電學門招集人
  2. 2014年 科技部傑出研究獎
  3. 2013年11月 獲選為國際電機電子學會會士(IEEEFellow)
  4. 2012年11月 與新世紀光電的產學合作計劃“高功率紫外光氮化鋁銦鎵發光二極體之研製”經國科會工程處考評榮獲產學成果傑出獎
  5. 2012年10月 獲選為美國光學學會會士(OSAFellow)
  6. 2012年10月 獲選為國際光電工程學會會士(SPIEFellow)
  7. 2012年10月 獲IEEETainanSection頒發之OutstandingTechnicalAchievementAward
  8. 2012年10月 獲得台積電師鐸獎
  9. 2012年08月 發表的“InGaN-GaNmultiquantum-wellblueandgreenlight-emittingdiodes”以及“LaterallygrownZnOnanowireethanolgassensors”等兩篇論文於獲湯森路透EssentialScienceIndicators(ESI)選為高引用論文(在工程學領域被引用次數排名前1%)
  10. 2012年01月 獲成大研究總中心頒發產學合作永續獎
  11. 2011年12月 獲選為台灣知識創新學會會士(TIKIFellow)
  12. 2011年12月 指導博士班學生王聖博於中國物理年會壁報論文優勝
  13. 2011年9月 指導博士班學生蕭至宏獲得台灣奈米影像競賽掃描式電子顯微鏡影像 組佳作
  14. 2010年12月 指導博士班學生蕭至宏獲得台灣奈米影像競賽穿透式電子顯微鏡影像組第一名
  15. 2010年12月 指導博士班學生蕭至宏獲得台灣奈米影像競賽掃描式電子顯微鏡影像組佳作
  16. 2010年11月 中華民國真空科技學會99年度年會中,以標題為“接觸孔蝕刻停止層之伸張應力對nMOSFE特性探討”之學術論文被評選為99年度論文競賽獎
  17. 2010年10月 指導碩士班學生池書旋之碩士論文獲得中國電機工程學會評選為最佳碩士論文獎全國第三名
  18. 2009年11月 獲得中山科學研究院頒發之學合案績優獎
  19. 2009年08月 指導博士班學生陳緯守獲得台灣電子商務學會所舉辦的崇越論文大賞甲等獎
  20. 2009/10-2010/03 指導博士班學生蕭至宏獲得日本丸文財團研究交流獎助及獎金100萬日幣,並於2009/10-2010/03至日本早稻田大學進行為期6個月的訪問交流。
  21. 2009年06月 MolecularBeamEpitaxy,Taiwan2009(MBETaiwan2009)中,指導博士班學生  蕭至宏以標題為“AZnSe  nanowire-basedphotodetector”之學術論文被評選為最佳論文
  22. 2008年08月 指導大學部學生呂宥萱之專題獲得96年度國科會大專學生參與專題研究計畫研究創作獎
  23. 2007年12月 獲得中國電機工程學會傑出電機工程教授獎
  24. 2007年11月 獲得李國鼎科技講座金質獎章
  25. 2007年06月 獲得中國工程學會高雄分會傑出工程教授獎
  26. 2006年12月 InternationalElectronDevice&MaterialsSymposium(IEDMS2007)中,以標題為“Nitride-basedp-i-nUV-Abandpassphotodetectors”之學術論文被評選為最佳論文
  27. 2005年06月 獲得中國工程學會高雄分會傑出工程師獎
  28. 2005年01月 AVSFirstInternationalConferenceonOne-DimensionalNanomaterials中,以標題為“VerticalZnOnanowiresgrownbyself-catalyzevapor-liquid-solidprocess”之學術論文被評選為最佳論文銅牌獎
  29. 2004年 93年度國科會傑出獎
  30. 2004年10月 指導博士班學生姬良文之博士論文獲得林科技論文獎奈米科技獎博士獎
  31. 2004年 指導博士班學生邱裕中之博士論文獲得宏碁龍騰知識經濟論文獎資訊科技及應用類金質獎
  32. 2003年10月 指導博士班學生邱裕中之博士論文獲得林科技論文獎半導體與光電科技獎博士獎
  33. 2003年10月 指導碩士班學生李軍鑫之碩士論文獲得林科技論文獎半導體與光電科技獎碩士獎
  34. 2003年10月 指導博士班學生邱裕中之博士論文獲得林科技論文獎半導體與光電科技獎博士獎
  35. 2003年10月 指導博士班學生陳進祥之博士論文獲得教育部博士生產學合作獎
  36. 2003年10月 指導碩士班學生李軍鑫之碩士論文獲得中國電機工程學會評選為最佳碩士論文獎全國第二名
  37. 2002年12月 指導博士班學生陳進祥之博士論文獲得中華民國光學工程學會評選為博士學生論文獎
  38. 2002年12月 InternationalElectronDevice&MaterialsSymposium(IEDMS2002)中,以標題為“Nitride-basedcascadedualwavelengthInGaNquantumwellwhitelightemittingdiodes”之學術論文被評選為最佳論文
  39. 2002年11月 中華民國真空科技學會91年度年會中,以標題為“真空電子束蒸鍍各種接觸電極之研究及其紫外光檢測器之應用”之學術論文被評選為91年度論文競賽獎
  40. 2001年10月 指導碩士班學生簡培偉之碩士論文獲得中國電機工程學會評選為最佳碩士論文獎全國第三名
  41. 2001年5月 獲得中國工程師學會工程論文獎
  42. 2000年3月 獲得日本丸文財團研究交流獎助及獎金150萬日幣
  43. 1999年9月 獲得中國電機工程學會優秀青年工程師獎
  44. 1999年10月 指導碩士班學生陳文瑞之碩士論文獲得中國電機工程學會評選為最佳碩士論文獎全國第二名