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Shoou-Jinn Chang |
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2012 Spring |
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1. Y.
K. Su, S. J. Chang, Y. J. Chiou, J.
K. Wang, T. K. Lin, "Photodetector and its fabrication method", ROC
patent No. 281267 (2007) 2. Y. H.
Wang, M/ P. Hong, Y. K. Su, S. J. Chang, H. R. Wu and J.
Y. Wu, "Fabrication method for GaN MOSFETs", ROC patent No.
169680 (2003) 3. Y. K. Su,
C. H. Chen, S. J. Chang and J. K. Sheu, "Structure
of GaN MSM UV photodetector and its fabrication method", ROC patent
No. 169681 (2002) 4. F. S. Juang,
Y. K. Su and S. J. Chang, "A modified suceptor
structure for epitaxial wafers", ROC patent No. 186781 (2002) 5. S.
J. Chang, Y. K. Su and W. R. Chen, "Ohmic contact structure
of II-VI semiconductor and its fabrication process", US patent No.
6469319B1 (2002) 6. F. S.
Juang, Y. K. Su and S. J. Chang, "A modified water
cooled gas nozzle", ROC patent No. 180792 (2002) 7. Y. K. Su,
C. T. Lin, S. J. Chang, H. T. Huang, S. M. Chang and T.
P. Sun, "Low noise HgCdTe FIR photodetector and its fabrication method",
ROC patent No. 120926 (2001) 8. Y. K. Su, S.
J. Chang and W. R. Chen, "Ohmic contact structure of II-VI
semiconductor and its fabrication method", ROC patent No. 132585
(2001) 9. Y. K. Su,
S. M. Chen, S. J. Chang and C. L. Lin, "Fabrication
of InAs and GaSb related photo-detectors, laser diodes and NDR devices by
MOCVD, ROC patent No. 104113 (1999) 10. Y. K. Su,
W. L. Li, S. J. Chang and C. Y. Tsai, "Design of
passive waveguide for minimization of transverse beam dispersion in
GaInP/AlGaInP visible quantum well lasers", ROC patent No. 101681
(1999) 11. Y. K. Su,
W. L. Li, S. J. Chang and C. Y. Tsai, "Red
semiconductor laser of low beam divergence", US patent No. 5923689
(1999) 12. Y. K. Su,
C. Y. Tsai and S. J. Chang, "A new high efficiency
NIP GaInP solar cell", US patent No. 5911839 (1999) 13. C. Y.
Tsai, Y. K. Su and S. J. Chang, "A new high
efficiency NIP GaInP solar cell", ROC patent No. 130666 (1998) 14. A.
Taguchi, K. Takahei and S. J. Chang, "Quantum well
structure", Japanese Patent No. H3-194770 (1991)
15. K.
Takahei, H. Nakagome, A. Taguchi and S. J. Chang,
"Crystals with impurities and their manufacturing methods", Japanese
Patent No. H2-288659 (1990) |
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A. Referred Papers: 1.
K. J. Chen,
F. Y. Hung, T. S. Lui, S. J. Chang and
Z. S. Hu, "The low-temperature crystallization and
interface characteristics of ZnInSnO/In films using a bias-crystallization
mechanism",
J. Nanomater.,
Vol. 2012, Art. no. 272387, 2012 2.
H. C. Hung, C. J. Wu and
S. J. Chang, "Infrared tunable multichannel filter in a doped
semiconductor-dielectric photonic crystal heterostructure", IEEE
J. Quan. Electron.,
Vol. 48, No. 3, pp. 361-366, March 2012. 3.
C. H. Yen, W. C. Lai, Y. Y. Yang, C. K. Wang, T. K. Ko, S. J. Hong and S.
J. Chang, "GaN-based
light-emitting diode with sputtered AlN nucleation layer", IEEE Photon. Technol. Lett., Vol.
24, No. 4, pp. 294-296, February 2012. 4.
S. J.
Chang, D. S. Kuo, K. T. Lam, K. H. Wen,
T. K. Ko and S. J. Hon, "GaN-based LEDs with
sapphire debris removed by phosphoric etching", IEEE
Tran. Components Packaging and Manufacturing Technol., Vol. 2, No. 2, pp. 349-353,
February 2012. 5.
H. C. Hung, C. J. Wu, T. J. Yang and
S. J. Chang, "Tunable multichannel filter in a photonic crystal containing
semiconductor photonic quantum well", IEEE Photon. J., Vol. 4, No. 1, pp. 293-290,
February 2012. 6.
H. Y.
Chen, M. H. Weng, S. J. Chang and R. Y. Yang, "Preparation of Sr2SiO4:Eu3+
phosphors by microwave-assisted sintering and their luminescent properties",
Ceramics International, Vol. 38, No. 1, pp. 125-130, January 2012. 7.
H. T. Hsueh, S.
J. Chang, W. Y. Weng, C. L. Hsu, T. J. Hsueh, F. Y. Hung, S. L.
Wu and B. T. Dai, "Fabrication and
characterization of coaxial p-copper oxide/n-ZnO nanowire
photodetectors", IEEE Tran. Nanotechnol., Vol. 11, No. 1, pp. 127-133,
January 2012. 8.
K. W. Liu,
S. J. Young, S. J. Chang, T. H. Hsueh, H. Hung, S. X. Chen and Y.
Z. Chen, "Growth of gallium nitride on silicon by molecular beam epitaxy
incorporating a chromium nitride interlayer", J. Alloys and Compounds,
Vol. 511, No. 1, pp. 1-4, January 2012. 9.
H. T. Hsueh, S.
J. Chang, F. Y. Hung, W. Y. Weng, S. P. Chang, T. J. Hsueh, C. L.
Hsu and B. T. Dai, "Isopropyl
alcohol sensors of CuO nanotubes by thermal oxidation of copper films on
glass", IEEE Sensors Journal,
Vol. 11, No. 12, pp. 3276-3282, December 2011. 10. T.
P. Chen, S. J. Young, S. J. Chang and C. H.
Hsiao, "Photoconductive gain of
vertical ZnO nanorods on flexible polyimide substrate by low-temperature
process", IEEE Sensors Journal,
Vol. 11, No. 12, pp. 3457-3461, December 2011. 11. H. C. Hung, C. J. Wu
and
S. J. Chang, "Terahertz
temperature-dependent defect mode in a semiconductor-dielectric photonic
crystal", J. Appl. Phys.,
Vol. 110, No. 9, Art. no. 093110, November 2011. 12.
W. Y.
Chen, S. J. Chang, M. H. Weng and C. Y. Hung, "Design of fractal-based CMOS
bandpass filter for Wireless HD system",
Microelectron. Journal, Vol. 42,
No. 11, pp. 1252-1256, November 2011. 13.
K. J. Chen,
F. Y. Hung, S. J. Chang, J.
D. Liao, C. C. Wang and Z. S. Hu, "The influences of plasma ion
bombarded on crystallization, electrical and mechanical properties of
Zn-In-Sn-O films", Appl. Sur. Sci., Vol. 258, No. 3, pp. 1157-1163, November 2011. 14. H. C. Hung, C.
J. Wu and
S. J. Chang, "A mid-infrared tunable filter in a semiconductor-dielectric
photonic crystal containing doped semiconductor defect", Solid State Communications, Vol. 151, No. 22, pp.
1677-1680, November 2011. 15.
H. T. Hsueh, T. J.
Hsueh, S. J. Chang, F. Y. Hung, W. Y. Weng, C. L. Hsu and B.
T. Dai, "Si nanowire-based humidity
sensors prepared on glass substrate", IEEE
Sensors Journal, Vol.
11, No. 11, pp. 3036-3041, November 2011. 16.
C. J. Chiu, W. Y.
Weng, S. J. Chang, S. P. Chang and T. H. Chang, "A deep UV sensitive Ta2O5/a-IGZO
TFT", IEEE Sensors Journal,
Vol. 11, No. 11, pp. 2902-2905, November 2011. 17.
Z. D. Huang, W. Y.
Weng, S. J. Chang, S. C. Hung, C. J. Chiu, T. J. Hsueh, W.
C. Lai and S. L. Wu, "GaN
Schottky barrier photodetectors with a lattice matched Al0.82In0.18N
intermediate layer", IEEE Sensors Journal, Vol. 11, No. 11, pp. 2895-2901,
November 2011. 18. S.
B. Wang, C. H. Hsiao, S. J. Chang, K. T. Lam, K.
H. Wen, S. C. Hung, S. J. Young and B. R. Huang, " A CuO nanowire
infrared photodetector", Sensors
and Actuators A, Vol. 171, No. 2,
pp. 207-211, November 2011 19. Z.
S. Hu, F. Y. Hung, S. J. Chang, K. J. Chen, Y.
W. Tseng, B. R. Huang, B. C. Lin, W. Y. Chou and J. Chang, "Improvement of n-ZnO/p-Si photodiodes by embedding of
silver nanoparticles", J.
Nanoparticle Research, Vol. 13, No. 10, pp. 4757-4763, October 2011. 20. C. W. Pao, C. T. Wu, H. M. Tsai, Y. S. Liu, C. L. Chang, W. F.
Pong, J. W. Chiou, C. W. Chen, M. S. Hu, M. W. Chu, L. C. Chen, C. H. Chen,
K. H. Chen, S. B. Wang, S. J. Chang, M. H. Tsai, H.
J. Lin, J. F. Lee amd J. H. Guo, "Photoconduction and the electronic structure of silica
nanowires embedded with gold nanoparticles", Phys. Review B, Vol. 84, No. 16, Art. no. 165412, October 2011. 21. T.
Y. Tsai, S. J. Chang, T. J. Hsueh, H. T. Hsueh, W. Y. Weng, C.
L. Hsu and B. T. Dai, "p-Cu2O-shell/n-TiO2-nanowire-core heterostucture
photodiodes", Nanoscale Research Lett.,
Vol. 6, Art. no. 575, October 2011. 22.
Y. H. Su, Y. K. Wu, S. L. Tu and S. J. Chang, "Electrostatic
studies of π-πinteraction for benzene stacking on a graphene layer", Appl. Phys. Lett., Vol. 99, No. 16, Art. no. 163102, October 2011 23.
K. H. Lee, P. C. Chang
and S. J. Chang, “AlGaN/GaN metal-insulator-semiconductor
heterostructure field-effect transistor with an in-situ AlN cap layer”, Appl. Phys. Lett., Vol. 99, No. 15,
Art. no. 153505, October 2011. 24. K.
H. Lee, P. C. Chang, S. J. Chang and S. L. Wu,
“InGaN metal-semiconductor-metal photodetectors with triethylgallium
precursor and unactivated Mg-doped GaN cap layers”, J. Appl. Phys., Vol. 110, No. 8, Art. no. 083113, October 2011. 25. C. J. Chiu, W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J.
Huang and H. T. Hsueh, "Ta2O5
solar-blind photodetectors", IEEE Sensors Journal, Vol. 11,
No. 10, pp. 2372-2373, October 2011. 26. K. W. Liu, S. J. Chang, S. J. Young,
T. H. Hsueh, H. Hung, Y. C. Mai, S. M. Wang and Y. Z. Chen, "Improvement
of (11-22) GaN on m-plane sapphire with CrN interlayer by using
molecular beam epitaxy", J. Electrochem. Soc., Vol. 158, No.
10, pp. H983-H987, October 2011. 27. C. J. Chiu, Z. W. Pei, S. T. Chang, S. P. Chang and S.
J. Chang, "Effect
of oxygen partial pressure on electrical characteristics of amorphous indium
gallium zinc oxide thin-film transistors fabricated by thermal annealing",
Vacuum, Vol. 86, No. 3, pp. 246-249, October 2011. 28. N. M. Lin, S. J. Chang, S. C. Shei, W.
C. Lai, Y. Y. Yang, W. C. Lin and H. M. Lo, "GaN-based LEDs with air voids
prepared by one-step MOCVD growth", IEEE/OSA
J. Lightwave Technol., Vol.
29, No. 18, pp. 2831-2835, September 2011. 29. W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang
and S. C. Hung, "Growth
of Ga2O3 nanowires and the fabrication of solar-blind
photodetector", IEEE
Tran. Nanotechnol., Vol.
10, No. 5, pp. 1047-1052, September 2011. 30. Y. T. Huang, S. L. Wu, S. J. Chang, C. W. Kuo, Y.
T. Chen. Y. C. Cheng and O. Cheng,
"Origin of stress memorization mechanism in
strained-Si nMOSFETs using a low-cost stress-memorization technique", IEEE Tran. Nanotechnol., Vol. 10, No. 5, pp. 1053-1056,
September 2011. 31. H. T. Hsueh, T. J. Hsueh, S. J. Chang, T. Y. Tsai, F.
Y. Hung, S. P. Chang, W. Y. Weng and B. T. Dai, "CuO-nanowire field emitter prepared on glass
substrate", IEEE
Tran. Nanotechnol., Vol.
10, No. 5, pp. 1161-1165, September 2011. 32. W. H. Lin, C. J. Wu and S. J. Chang, "Effects of loss on the transmission
and reflection in the single-negative materials", Appl. Phys. A, Vol. 104, No. 3, pp.
807-809, September 2011. 33. K. J. Chen, F. Y. Hung, S. J. Chang, S. J. Young and Z. S. Hu, "Effects of crystallization
on the optical properties of ZnO nano-pillar thin films by sol-gel
method", Current Appl. Phys.,
vol. 11, No. 5, pp. 1243-1248, September 2011 34. W. Y. Weng, T. J. Hsueh, S. J. Chang, S. C. Hung, G. J. Huang, H. T. Hsueh, Z. D. Huang and C. J. Chiu, "An (AlxGa1-x)2O3 metal-semiconductor-metal VUV photodetector", IEEE Sensors Journal, Vol. 11, No. 9, pp. 1795-1799, September 2011. 35.
S. C.
Shei, H. M. Lo, W. C. Lai, W. C. Lin and S. J. Chang, "GaN-based
LEDs with air voids prepared by laser scribing and chemical etching", IEEE Photon. Technol. Lett., Vol. 23, No. 16, pp. 1172-1174,
August 2011. 36. K. H. Lee, P. C. Chang, S. J. Chang and S. L. Wu,
“InGaN metal-semiconductor-metal photodetectors with aluminum nitride cap
layers”, IEEE J. Quantum Electron.,
vol. 47, No. 8, pp. 1107-1112, August 2011. 37. Y.
Z. Chiou, T. H. Chiang, D. S. Kuo, S. J. Chang, T. K. Ko and
S. J. Hon, "The
reliability analysis of GaN-based light-emitting diodes with different
current-blocking layers", Semicond. Sci. Technol.,
Vol. 26, No. 8, Art. no. 085006, August 2011. 38. Z. S. Hu, F. Y. Hung, S. J. Chang, B. R. Huang, B.
C. Lin, K. J. Chen, T. P. Chen and W. I. Hsu, "Growth
mechanism and field emission characteristics of GaO/GaN nanotips using
iodine-assisted enhanced focused ion beam etching", Curent Nanosci., Vol. 7, No. 4,
pp. 594-597, August 2011. 39. H. T. Hsueh, T. J. Hsueh, S. J. Chang, F. Y. Hung, T.
Y. Tsai, W. Y. Weng, C. L. Hsu and B. T. Dai, "CuO nanowire-based humidity sensors prepared on glass
substrate", Sensors and Actuators B,
Vol. 156, No. 2, pp. 906-911, August 2011. 40. K. J. Chen, F. Y. Hung, T. S. Lui, S. J. Chang
and Z. S. Hu, "The
bias-crystallization mechanism on structural characteristics and electrical
properties of Zn-In-Sn-O film",
Mater. Tran.,
Vol. 52, No. 8, pp. 1560-1564,
August 2011. 41. T. H. Chiang, Y. Z. Chiou, S. J. Chang, T. K. Lin and
S. P. Chang, "Effect of Si doped quantum barriers on nitride-based light
emitting diodes", J. Electrochem. Soc., Vol. 158, No. 8,
pp. H836-H839, August 2011 42. S. J.
Chang, C. H.
Hsiao, S. C. Hung, S. J. Young, Y. C. Cheng, B. R. Huang, S. B. Wang, S. H.
Chih and T. P. Chen, "Growth
and characterization of ZnSe/CdSe multiquantum disks", IEEE J. Sel. Top.
Quan. Electron., Vol. 17, No. 4, pp. 779-784, July/August 2011. 43. S. P. Chang, C. Y. Lu, S. J. Chang, Y. Z.
Chiou, T. J. Hsueh and C. L. Hsu, "Electrical and optical properties of UV photodetector with
interlaced ZnO nanowires",
IEEE J. Sel. Top. Quan. Electron.,
Vol. 17, No. 4, pp. 790-795, July/August 2011. 44. W. Y. Weng, T. J. Hsueh, S. J. Chang, Y. Z.
Chiou, T. J. Hsueh and C. L. Hsu, "A high responsivity GaN nanowire UV photodetector", IEEE J. Sel. Top.
Quan. Electron., Vol. 17, No. 4, pp. 996-1001, July/August 2011. 45. K. W. Liu, S. J. Chang, S. J. Young,
T. H.
Hsueh, H. Hung, Y. C. Mai, S. M. Wang,
K. J. Chen,
Y. L. Wu
and Y. Z. Chen, "InN nanorods prepared with CrN nanoislands by
plasma-assisted molecular beam epitaxy", Nanoscale Research Lett.,
Vol. 6, Art. no. 442, July 2011. 46.
S. J.
Chang, C. H. Hsiao, S. C. Hung, S. H.
Chih, S. B. Wang, Y. C. Cheng, B. R. Huang, S. P. Chang and S. J. Young,
"ZnSe/ZnCdSeTe superlattice nanotips", IEEE Tran. Nanotechnol., Vol. 10, No. 4, pp. 682-687,
July 2011. 47. P. C. Huang, S. L. Wu, S. J. Chang, C. W. Kuo, C.
Y. Chang, Y. T. Huang, Y. C. Cheng and O. Cheng, "Temperature dependence of
electrical characteristics of strained nMOSFETs using stress memorization
technique", IEEE Electron.
Dev. Lett., Vol. 32, No. 7, pp. 835-837, July 2011. 48. C. H. Jang, J. K. Sheu, S. J. Chang, M. L. Lee, C.
C. Yang, S. J. Tu, F. W. Huang and C. J. Hsu, "Effect
of growth pressure of undoped GaN layer on the ESD characteristics of
GaN-based LEDs grown on patterned sapphire", IEEE Photon. Technol. Lett., Vol. 23, No. 14, pp. 968-970, July
2011. 49. Z. D. Huang, W. Y. Weng, S. J. Chang,
C. J. Chiu, T. J. Hsueh, W. C. Lai and S. L. Wu, "GaN MSM UV
photodetectors with an Al0.82In0.18N intermediate
layer", J. Electrochem. Soc.,
Vol. 158, No. 7, pp. J221-J224, July 2011. 50. H. Y. Chen, M. H. Weng, R. Y. Yang and S. J. Chang, "The effects of sintering
method on crystalline morphology and photoluminescent properties of BaY2ZnO5:Tb3+",
Ceramics International, Vol. 37, No. 5, pp. 1521-1524, July 2011. 51. W. Y. Chen, Y. H. Su, H. Kuan and S. J. Chang, "Simple method to design a
tri-band bandpass filter using asymmetric SIRs for GSM, WiMax WLAN applications", Microwave
Optical Technol. Lett., Vol. 53, No. 7, pp. 1573-1576,
July 2011. 52. P. C. Huang, S. L. Wu, S. J. Chang, Y. T. Huang,
J. F. Chen, C. T. Lin, M. Ma and O. Cheng, "Characteristics of Si/SiO2
interface properties for CMOS fabricated on hybrid orientation substrate
using amorphization/templated recrystallization (ATR) method",
IEEE Tran. Electron. Dev.,
Vol. 58, No. 6, pp. 1635-1642, June 2011. 53. H. M. Lo, S. C. Shei, X. F. Zeng, S. J. Chang and
H. Y. Lin, "AlGaInP-based LEDs with p+-GaP window layer and a
thermally annealed ITO contact",
IEEE J. Quan. Electron.,
Vol. 47, No. 6, pp. 803-809, June 2011. 54. W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang
and H. T. Hsueh, "A β-Ga2O3/GaN hetero-structured
solar-blind and visible-blind dual-band
photodetector", IEEE Sensors Journal,
Vol. 11, No. 6, pp. 1491-1492, June 2011. 55. C. C. Huang, S. J. Chang, C. H.
Kuo, C. H. Wu, C. H. Ko, C. H. Wann, Y. C. Cheng and W. J. Lin,
"Single crystalline GaN epitaxial layer prepared on nano-patterned
Si(001) substrate", J.
Electrochem. Soc., Vol. 158, No. 6, pp. H626-H629, June 2011. 56.
S. J.
Chang, S. H. Chih, C. H. Hsiao, B. W.
Lan, S. B. Wang, Y. C. Cheng, T. C. Li and S. P. Chang, "Growth and
photoelectric properties of twinned ZnSe1−xTex nanotips",
IEEE Tran. Nanotechnol., Vol.
10, No. 3, pp. 379-384, May 2011. 57. Y. T. Huang, S. L. Wu, S. J. Chang, C.
K. Hung, T. J. Wang, C. W. Kuo, C. T.
Huang and O. Cheng, "Enhancement of
CMOSFETs performance by utilizing SACVD-based shallow trench isolation for
the 40-nm node and beyond", IEEE
Tran. Nanotechnol., Vol. 10, No. 3, pp. 433-438,
May 2011. 58. H. M. Lo, S. C. Shei, X. F. Zeng, S. J. Chang and
H. Y. Lin, "Postannealing effect on ITO/p+-GaP with a
diffused layer", J. Electrochem. Soc.,
Vol. 158, No. 5, pp. H506-H509, May 2011. 59. H. T. Hsueh, S. J. Chang, F. Y. Hung, W.
Y. Weng, C. L. Hsu, T. J. Hsueh, T. Y. Tsai and B. T. Dai, "Fabrication of coaxial p-Cu2O/n-ZnO nanowire
photodiodes", Superlattice Microst., Vol. 49, No. 5, pp. 572-580,
May 2011. 60. N. M. Lin, S. C. Shei and S. J. Chang, "Nitride-based LEDs with
high-reflectance and wide-angle Ag mirror+SiO2/TiO2 DBR
backside reflector", IEEE/OSA
J. Lightwave Technol., Vol.
29, No. 7, pp. 1033-1038, April 2011. 61. W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang
and H. T. Hsueh, "A
β-Ga2O3 solar-blind photodetector prepared by furnace
annealing of GaN thin film", IEEE
Sensors Journal, Vol.
11, No. 4, pp. 999-1003, April 2011. 62. P. T. Hsieh, R. W. K. Chuang, C. Q. Chang, C. M. Wang and S. J. Chang, "Optical and structural characteristics of
yttrium doped ZnO films using sol-gel technology", J.
Sol-Gel Sci. Technol., Vol. 58, No. 4, pp. 42-47, April 2011. 63. H. T. Hsueh, S. J. Chang,
F. Y. Hung, W. Y. Weng, C. L. Hsu, T. J. Hsueh, S. S. Lin and B.
T. Dai, "Ethanol gas
sensor of crabwise CuO nanowires prepared on glass substrate", J. Electrochem. Soc.,
Vol. 158, No. 4, pp. J106-J109, April 2011. 64.
R. Y.
Yang, H. Y. Chen, C. M. Hsuing and S. J. Chang, "Crystalline morphology and
photoluminescent properties of YInGe2O7:Eu3+
phosphors prepared from microwave and conventional sintering", Ceramics International,
Vol. 37, No. 3, pp. 749-752, April 2011 65.
C. W. Kuo,
S. L. Wu, H. Y. Lin, Y. T. Huang, S. J. Chang, D. G. Hong, C.
Y. Wu, Y. C. Cheng and O. Cheng, “Investigation of stress memorization
process on low-frequency noise performance for strained Si n-type
metal-oxide-semiconductor field-effect transistors”, Jpn. J. Appl. Phys., Vol. 50, No. 4, Art. no. 04DC20, April 2011 66.
Y. T.
Huang, S. L. Wu, H. Y. Lin, C. W. Kuo, S. J. Chang, D. G. Hong, C.
Y. Wu, C. T. Huang and O. Cheng, “Impact of reducing shallow trench isolation
mechanical stress on active length for 40 nm n-type metal-oxide-semiconductor
field-effect transistors”, Jpn. J.
Appl. Phys., Vol. 50, No. 4, Art. no. 04DC21, April 2011 67.
W. Y. Weng,
T. J. Hsueh, S. J. Chang, G. J. Huang and H. T. Hsueh, "A β-Ga2O3/GaN
Schottky barrier photodetector", IEEE
Photon. Technol. Lett., Vol.
23, No. 7, pp. 444-446, April 2011. 68. H. Y. Lin, S. L. Wu, C. C. Cheng, C. H. Ko, C. H. Wann, Y. R.
Lin, S. J. Chang and T. B. Wu, "Influence of surface
reconstruction on the atomic-layer-deposited HfO2/Al2O3/n-InAs
metal-oxide-semiconductor capacitors", Appl. Phys. Lett.,
Vol. 98, No. 12, Art. no. 123509, March 2011. 69.
S. C.
Shei, S. J. Chang and P. Y. Lee, "Rinsing effects on successive ionic layer adsorption
and reaction method for deposition of ZnO thin films", J. Electrochem. Soc., Vol. 158, No. 3, pp. H208-H213, March
2011. 70.
T. H.
Chiang, Y. Z. Chiou, S. J. Chang, C. K. Wang, T.
K. Ko, T. K. Lin, C. J. Chiu and S. P. Chang, "Improved optical and ESD
characteristics for GaN-based LEDs with an n--GaN layer", IEEE Tran. Dev. Mater. Reliability, Vol. 11, No. 1, pp. 76-80,
March 2011. 71. P. C. Huang, S. L. Wu, S. J. Chang, Y. T. Huang, C.
T. Lin, M. Ma and O. Cheng, "Effect of annealing time on Si/SiO2
interface property for CMOS fabricated on hybrid orientation substrate with ATR method",
Mater. Chem. Phys.,
Vol. 126, No. 1-2, pp. 16-19, March 2011. 72. S. J. Young, C. H. Hsiao, S. J. Chang, L. W. Ji, T.
H. Meen, T. P. Chen, K. W. Liu and K. J. Chen, "High temperature characteristics of ZnO-based MOS-FETs with a
photochemical vapor deposition SiO2 gate dielectric", J. Phys. Chem. Solids, Vol. 72, No. 2, pp. 147-149, February 2011. 73.
W. Y. Weng, S. J. Chang,
C. L. Hsu and T. J. Hsueh, "A ZnO-nanowire
phototransistor prepared on glass substrates", ACS Appl. Mater. Interfaces,
Vol. 3,
No. 2, pp. 162-166, February 2011. 74.
C.
C. Huang, S. J. Chang, C. H. Kuo, C. H. Ko, C. H. Wann, Y.
C. Cheng and W. J. Lin, "GaN epitaxial layers prepared on
nano-patterned Si(001) substrate", J.
Nanosci. Nanotechnol., Vol. 11, No. 2, pp. 1248-1251, February 2011. 75. K. J. Chen, F. Y. Hung, S. J. Chang,
S. P. Chang, Y. C. Mai and Z. S. Hu, "A study on crystallization,
optical and electrical properties of the advanced ZITO thin films using
co-sputtering system", J. Alloys
and Compounds,
Vol. 509, No. 8, pp. 3667-3671, February 2011 76. Z. S. Hu, F. Y. Hung, S. J. Chang,
B. R. Huang, B. C. Lin, K. J. Chen and W. I. Hsu, "Nanostructural
characteristics of oxide-cap GaN nanotips by iodine-gallium ions
etching", J. Alloys and Compounds,
Vol. 509, No. 5, pp. 2360-2363, February 2011. 77. S. J. Young, S. J. Chang, L. W. Ji, T.
H. Meen, C. H. Hsiao, K. W. Liu, K. J. Chen and Z. S. Hu, "Thermally stable Ir/n-ZnO
Schottky diodes", Microelectron. Eng., Vol. 88, No. 1, pp. 113-116, January 2011. 78.
Z. S. Hu,
F. Y. Hung, S. J. Chang, K. J. Chen, W. L. Wang, S. J. Young and
T. P. Chen, "Effects of Ag nanoshape and AgGa phase in Ag-Si nanostructure
using 2-step etching process", J.
Alloys and Compounds, Vol. 509, No. 3, pp. 758-763, January 2011. 79. S. P. Chang, C. Y. Lu, S. J. Chang, Y. Z. Chiou,
C. L. Hsu, P. Y. Su and T. J. Hsueh, "A novel fabrication of p-n diode based on ZnO
nanowire/p-NiO heterojunction", Jpn. J. Appl. Phys.,
Vol. 50, No. 1, Art. no. 01AJ05,
January 2011. 80. W. H. Lin, C. J. Wu, T. J. Yang and S. J. Chang, "Terahertz multichanneled
filter in a superconducting photonic crystal", Optics Express,
Vol. 18, No. 20, pp. 27155-27166, December 2010. 82.
S. J.
Chang,
W. Y. Weng, C. L. Hsu and T. J. Hsueh, "High sensitivity of ZnO
nanowires-based ammonia gas sensor with Pt nano-particles", Nano Communication Networks, Vol. 1, No. 4, pp. 283-288, December
2010. 83. L. W. Ji, T. H. Fang, C. Z. Wu, T. T. Chu, H. L. Jiang, S.
J. Chang, S. M. Peng, J. C. Zhong and W. Y. Chang,
"Structural and optoelectronic characteristics of well-aligned ZnO
nanorod arrays for photodiodes",
J. Nanoelectron. Optoelectron.,
Vol. 5, No. 3, pp. 295-299, December 2010. 84. K. J. Chen, T. H. Fang, L. W. Ji, S. J. Chang and S. J. Young, "Fabrication and characteristics of
silicon micro-tip arrays", International J. Modern Phys. B, Vol.
24, No. 28, pp. 5601-5611, November 2010. 85. C. J. Chiu, S. P. Chang and S. J. Chang, "High-performance a-IGZO
thin-film transistor using Ta2O5 gate
dielectric", IEEE Electron. Dev.
Lett., Vol. 31, No. 11, pp. 1245-1247, November 2010. 86. H. Y. Chen, R. Y. Yang and S. J. Chang, "Improving crystalline morphology and photoluminescent
properties of BaY2ZnO5:Eu3+ phosphors
prepared using microwave assisted sintering", Maters. Lett.,
Vol. 64, No. 22, pp. 2548-2550, November 2010. 87. W. H. Lin, C. J. Wu and S. J. Chang, "Analysis of angle-dependent
unusual transmission in lossy single-negative (SNG) materials", Solid
State Communications,
Vol. 150, No. 37-38, pp. 1729-1732,
October 2010. 88. H. M. Lo, Y. T. Hsieh, S. C. Shei, Y. C. Lee, X. F. Zeng, W. Y.
Weng, N. M. Lin and S. J. Chang, "Enhanced output power for InGaAlP
LEDs by contact-transferred and mask-embedded lithography", Superlattice Microst., Vol. 48, No. 4, pp. 358-364, October 2010. 89. S. J. Chang, S. M.
Wang, P. C. Chang, C. H. Kuo, S. J. Young, T. P. Chen, S. L. Wu and B. R.
Huang, "GaN Schottky barrier photodetectors", IEEE Sensors Journal, Vol. 10, No. 10, pp.
1609-1614, October 2010. 90. Y. S. Wang, S. J. Chang, C.
L. Tsai, M. C. Wu, Y. Z. Chiou, S. P. Chang and W. Lin, "10-Gb/s
planar InGaAs P-I-N photodetectors", IEEE Sensors Journal, Vol. 10, No. 10, pp. 1559-1563,
October 2010. 91. W. H. Lin, C. J. Wu and S. J. Chang,
"Angular dependence of wave reflection in a lossy single-negative
bilayer", Prog. in Electromagn.
Res. (PIERS), Vol. 107, pp. 253-267,
2010. 92. P. C. Huang, S. L. Wu, S. J. Chang, Y. T. Huang,
C. W. Kuo, C. Y. Chang, Y. C. Cheng and O. Cheng, "Evaluation of interface property and DC characteristics
enhancement in nanoscale n-channel metal-oxide-semiconductor field-effect
transistor using stress memorization technique", Jpn. J.
Appl. Phys.,
Vol. 49, No. 9, Art. no. 090207, September 2010. 93. C. W. Kuo, S. L. Wu, S. J. Chang, Y. T. Huang,
Y. C. Cheng and O. Cheng, "Impact of stress-memorization technique
induced-tensile strain on low frequency noise in n-channel metal-oxide-semiconductor
transistors", Appl. Phys. Lett.,
Vol. 97, No. 12, Art. no. 123501, September 2010. 94. W. Y. Weng, S. J. Chang, C. L. Hsu, S.
P. Chang and T. J. Hsueh, "Laterally grown n-ZnO nanowire/p-GaN
heterojunction light emitting diodes",
J. Electrochem. Soc., Vol. 157, No. 9, pp. H866-H868, September 2010. 95. C. H. Lan, J. D. Hwang, S. J. Chang, J. S. Liao, Y. C. Cheng, W. J. Lin and J. C. Lin, "Investigations of ZnO nanowires and ZnO/p-GaN heterojunction diodes grown by different aqueous solutions zinc nitrate and zinc acetate", Electrochem. Solid State Lett.., Vol. 13, No. 11, pp. H363-H365, August 2010. 96. P. C. Chang, Y. K. Su, K. J. Lee, C. L. Yu, S. J. Chang, C.
H. Liu, "Improved performance of GaN-based Schottky barrier
photodetectors by annealing Ir/Pt Schottky contact in O2", J. Alloys Compounds, Vol. 504,
pp.S429-S431, August 2010. 97. C. C. Huang, S. J. Chang, R.
W. Chuang, J. C. Lin, Y. C. Cheng and W. J. Lin, "GaN grown on Si(111) with step-graded AlGaN
intermediate layers", Appl. Sur. Sci., Vol. 256, No. 21, pp. 6367-6370, August 2010. 98. Z. S. Hu, F. Y. Hung, S. J. Chang, K. J. Chen and
Y. Z. Chen, "Crystallization effect of Al-Ag alloying layer in PL
enhancement of ZnO thin film", Intermetallics,
Vol. 18,
No. 8, pp. 1428-1431, August 2010. 99. C. H. Chen, S. J. Chang, S. P. Chang,
M. J. Li, T. J. Hsueh, A. D. Hsu and C. L. Hsu, "Fabrication of a white-light-emitting diode by doping gallium into ZnO
nanowire on a p-GaN substrate", J. Phys. Chem. C, Vol. 114, No. 29, pp.
12422-12426, July 2010. 100. S. J. Chang, C. H.
Hsiao, B. W. Lan, S. C. Hung, B. R. Huang, S. J. Young, Y. C. Cheng and S. H.
Chih, "Growth of ternary
ZnCdSe nanowires and the fabrication of ZnCdSe nanowire photodetector", Superlattice Microst., Vol. 48, No. 1, pp. 50-57, July 2010. 101. K. T. Liu, S. J. Chang, S. Wu, and Y. Horikoshi, "Crystal polarity effects on magnesium
implantation into GaN layer", Jpn. J. Appl. Phys., Vol. 49, No. 7, Art. no.
071001, July 2010. 102. K. J. Chen,
F. Y. Hung, Y. T. Chen, S. J. Chang and
Z. S. Hu, "Surface characteristics, optical and electrical
properties on sol-gel synthesized Sn-doped ZnO thin film", Mater. Tran., Vol. 51, No. 7, pp. 1340-1345, July 2010. 103. W. H. Lin, C. J. Wu,
T. J. Yang and S. J. Chang, "Terahertz intrinsic and effective surface impedances of
high-temperature superconducting thin films", J. Electromagn. Waves
and Appl., Vol. 24, No. 17-18, pp. 2589-2603, 2010. 104. S. J. Chang, W.
Y. Chen and M. H. Weng, "A miniaturized dual-mode bandpass filter with a wide
stopband realized on the ultra-thin flexible substrate", J. Electromagn. Waves and Appl., Vol. 24, No. 17-18, pp.
2363-2370, 2010. 105. C. H. Lan, J. D. Hwang, S. J. Chang, Y. C. Cheng, W. J. Lin, J. C. Lin, J. S.
Liao and Y. L. Lin,
"(NH4)2Sx-treated
AlGaN MIS photodetectors with LPD SiO2 layer", J.
Electrochem. Soc.,
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June 2010. 106. K. J. Chen,
F. Y. Hung, S. J. Chang,
S. J. Young, Z. S. Hu and S. P. Chang, "An investigation of the microstructure,
optical and electrical properties of ZITO thin film using the sol-gel
method", J. Sol-Gel Sci. Technol., Vol. 54, No. 3, pp. 347-354, June 2010. 107. S. J. Chang, S.
M. Wang, T. P. Chen, S. J. Young, Y. C. Lin, S. L. Wu and B. R. Huang, "GaN
Schottky barrier photodetectors prepared on patterned sapphire substrate",
J. Electrochem. Soc., Vol. 157, No. 6, pp. J212-J215, June 2010. 108. C. H. Hsiao, S. C.
Hung, S. H. Chih, S. B. Wang, Y. C. Cheng, B. R. Huang, S. J. Young and S.
J. Chang, "ZnSe/ZnSeTe superlattice nanotips", Nanoscale Research Lett.,
Vol. 5, No. 6, pp. 930-934, June 2010. 109.
S. F. Yu, S. J. Chang, R.
M. Lin, Y. H. Lin, Y. C. Lu, S. P. Chang and Y. Z. Chiou, "Growth of quaternary AlInGaN with various
TMI molar rates", J.
Crystal Growth, Vol. 312, No. 12-13, pp. 1920-1924, June
2010. 110.
S. P. Chang, S. J. Chang, C.
Y. Lu, M. J. Li, C. L. Hsu, Y. Z. Chiou, T. J. Hsueh and I. C. Chen, "A ZnO nanowire-based humidity sensor",
Superlattice Microst., Vol.
49, No. 6, pp. 772-778, June 2010. 111.
B. W. Lan, C. H. Hsiao,
S. C. Hung, S. J. Chang,
S. J. Young, Y. C. Cheng, S. H. Chih and B. R. Huang, " ZnCdSe nanowires grown by
molecular beam epitaxy", J. Vac. Sci.
Technol. B, Vol.
28, No. 3, pp. 613-616, May/June 2010. 112. W. Y. Weng, T. J.
Hsueh, S. J. Chang, G. J. Huang and S. P. Chang, "A solar-blind β-Ga2O3
nanowire photodetector", IEEE
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22, No. 10, pp. 709-711, May 2010. 113. B. C. Wang, T. K.
Kang, S. L. Wu and S. J. Chang, "Tensile
CESL-induced strain dependence on impact ionization efficiency in
nMOSFETs", Microelectron. Reliability, Vol. 50,
No. 5, pp. 610-613, May 2010. 114. S. J. Chang, S.
M. Wang, P. C. Chang, C. H. Kuo, S. J. Young and T. P. Chen, "GaN MSM photodetectors prepared on nanorod
template", IEEE Photon. Technol. Lett., Vol. 22, No. 9, pp. 625-627, May
2010. 115. C. Y. Hu, J. F. Chen, S. C. Chen, S. J. Chang, K. M. Lee and
C. P. Lee, "Ultrathin
DPN STI SiON liner for 40 nm low-power CMOS technology", Solid State Electron., Vol. 54, No. 5, pp. 564-567,
May 2010. 116.
C. H. Hsiao, S. J. Chang, S. C.
Hung, Y. C. Cheng, B. R. Huang, S. B. Wang, B. W. Lan and S. H. Chih, "ZnSe/ZnCdSe heterostructure nanowires", J. Crystal
Growth, Vol.
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K. H. Lee, P. C. Chang, S.
J. Chang, Y. K. Su and C. L. Yu, "AlGaN/GaN high electron
mobility transistors based on InGaN/GaN multiquantum-well structures", Appl. Phys. Lett., Vol. 96, No. 21,
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Wu, S. J. Chang, Y. T. Huang, C. T. Lin, M. Ma and O.
Cheng, "Electrical characteristics of nMOSFETs fabricated on
hybrid orientation substrate with amorphization/templated recrystallization
method", Microelectron. Reliability, Vol. 50, No. 5, pp. 662-665, May 2010. 119. Y. T. Huang, S. L.
Wu, S. J. Chang, C. W. Kuo, Y. T. Chen, Y. C. Cheng and O.
Cheng, "Dependence
of DC parameters on layout and low-frequency noise behavior in strained-Si
nMOSFETs fabricated by stress-memorization technique", IEEE Electron. Dev. Lett.,
Vol. 31, No. 5, pp. 500-502, May 2010. 120. D. S. Kuo, S.
J. Chang, C. F. Shen, T. C. Ko, T. K. Ko and S. J. Hon, "Nitride-based LEDs with
oblique sidewalls and a light guiding structure", Semicond. Sci. Technol., Vol. 25, No. 5, Art. no. 055010,
May 2010. 121. Y. X. Sun, W. S. Chen, S. C. Hung, K.
T. Lam, C. H. Liu and S. J.
Chang, "GaN-based
power flip-chip LEDs with an internal ESD protection diode on Cu sub-mount", IEEE
Tran. Adv. Packaging, Vol. 33, No. 2, pp. 433-437, May
2010. 122. C. H. Chen, S.
J. Chang, S. P. Chang, Y. C. Tsai, I. C. Chen, T. J. Hsueh and C.
L. Hsu, "Enhanced field emission of well-aligned ZnO nanowire arrays
illuminated by UV", Chem.
Phys. Lett., Vol. 490, No. 4-6, pp. 176-179, April 2010. 123.
C. H. Chen, S. J. Chang, M.
H. Wu, S. Y. Tsai and H. J. Chien, "AlGaN metal-semiconductor-metal
photodetectors with low-temperature AlN cap layer and recessed
electrodes", Jpn. J. Appl. Phys., Vol. 49, No. 4, Art. no. 04DG05, April 2010. 124. C. Y. Hu, J. F. Chen, S. C. Chen, S. J. Chang, K. M. Lee and
C. P. Lee, "Improvement
of poly-pimple-induced device mismatch on 6T-SRAM at 65-nm CMOS technology", IEEE Tran. Electron. Dev., Vol. 57, No. 4, pp. 956-959,
April 2010. 125.
S. J. Chang, W. Y.
Weng, W. C. Lai, T. J. Hsueh, S. C. Shei, X. F. Zeng and S. L. Wu, "GaN Schottky barrier
photodetectors with a semi-insulating AlInN cap layer", J. Electrochem. Soc., Vol. 157, No. 4, pp. J120-J124,
April 2010. 126.
P. C.
Chang, K. H. Lee, S. J. Chang, Y. K. Su, T. C. Lin and S. L. Wu, "III-nitride
Schottky rectifiers with an AlGaN/GaN/AlGaN/GaN quadruple layer and their
applications to UV detection",
IEEE Sensors Journal, Vol. 10, No. 4, pp. 799-804, April 2010. 127. C. H. Jang, J. K.
Sheu, C. M. Tsai, S. J. Chang, W. C. Lai, M. L. Lee, T. K. Ko, C. F.
Shen and S. C. Shei, "Improved performance of GaN-based blue LEDs
with the InGaN insertion layer between the MQW active layer and the n-GaN
cladding layer",
IEEE J. Quan. Electron.,
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H. T. Hsueh, T. J. Hsueh, S.
J. Chang,
F. Y. Hung, C. L. Hsu, W. Y. Weng, C. W. Liu, Y. H. Lee and B. T.
Dai, "Selective growth of
silicon nanowires on glass substrate with an ultrathin a-Si:H
layer", Electrochem. Solid
State Lett., Vol. 13, No. 4, pp. K29-K31,
April 2010. 129. K. H. Lee, P. C.
Chang, S. J. Chang, Y. K. Su, Y. C. Wang, C. L. Yu and C. H.
Kuo, "Dislocation reduction in nitride-based Schottky diodes by using
multiple MgxNy/GaN nucleation layers", Thin Solid Films, Vol. 518, pp. 2839-2842,
March 2010. 130. C. Y. Hu, J. F. Chen, S. C. Chen, S. J. Chang, S. M. Wang, C.
P. Lee and K. M. Lee, "Shallow trench isolation
stress modification by optimal shallow trench isolation process for sub-65-nm
low power complementary metal oxide semiconductor technology", J. Vacuum
Sci. Technol. B, Vol. 28, No. 2, pp. 391-397,
March 2010. 131. C. H. Kuo, Y. K. Fu,
G. C. Chi and S. J. Chang, "Efficiency dependence on degree of
localization states in GaN-based asymmetric two-step light-emitting diode
with a low indium content InGaN shallow step", IEEE J. Quan. Electron.,
Vol. 46, No. 3, pp. 391-395, March 2010. 132.
K. J. Chen, F. Y. Hung, S.
J. Chang and Z. S. Hu, "The crystallized mechanism and optical
properties of sol-gel synthesized ZnO nanowires", J.
Electrochem. Soc.,
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March 2010. 133. W. Y. Weng, S.
J. Chang, C. L. Hsu, T. J. Hsueh and S. P. Chang, "A lateral ZnO nanowire
photodetector prepared on glass substrate", J. Electrochem. Soc., Vol.
157, No. 2, pp. K30-K33, February 2010. 134. C. H. Hsiao, S. J. Chang, S. B. Wang, S. P. Chang, Y. C. Cheng,
T. C. Li, W. J. Lin and B. R. Huang, "Quaternary ZnCdSeTe nanowires", J. Nanosci. Nanotechnol., Vol. 10, No. 2, pp. 798-802,
February 2010. 135. C. Y. Lu, S. P. Chang, S. J. Chang, C. L. Hsu,
Y. Z. Chiou and I. C. Chen, "ZnO
nanowire-based UV photodetector", J. Nanosci.
Nanotechnol., Vol.
10, No. 2, pp. 1135-1138, February 2010. 136. W. Y. Chen, S.
J. Chang, M. H. Weng and C. Y. Hung, "Design of the fractal-based dual-mode bandpass filter on
ultra thin liquid-crystal-polymer substrate", J. Electromagn.
Waves and Appl., Vol. 24, No. 1, pp. 391-399, January 2010. 137. C. Y. Hu, J. F. Chen, S. C. Chen, S. J. Chang, C. P. Lee and
T. H. Lee, "Improved
poly gate engineering for 65 nm low power CMOS technology", J. Electrochem.
Soc., Vol.
157, No. 1, pp. H38-H43, January 2010. 138. S.
J. Chang, C. H. Hsiao, S. C. Hung, S. H.
Chih, B. W. Lan, S. B. Wang, S. P. Chang, Y. C. Cheng, T. C. Li and B. R.
Huang, "Growth of ZnSe1−xTex nanotips and the fabrication of ZnSe1−xTex nanotip-based photodetector", J. Electrochem.
Soc., Vol. 157, No. 1, pp. K1-K4, January 2010. 139. K. H. Lee, P. C.
Chang, S. J. Chang, Y. K. Su, Y. C. Wang, C. H. Liu,
"High-sensitivity nitride-based ultraviolet photosensors with a
low-temperature AlGaN interlayer", J.
Electron. Mater., Vol. 39, No.1, pp. 29-33, January, 2010. 140. C. L. Tsai, Y. L.
Chou, Y. S. Wang, S. J. Chang, M. C. Wu and W. Lin, "1.3 μm
strain-compensated InGaAsP planar buried heterostructure laser diodes with a
TO-can package for optical fiber communications", J. Electrochem. Soc., Vol. 156, No. 12, pp.
H903-H907, December 2009. 141. S. J. Chang, C.
H. Hsiao, S. B. Wang, Y. C. Cheng, T. C. Li, S. P. Chang, B. R. Huang and S.
C. Hung, "A quaternary ZnCdSeTe
nanotip photodetector", Nanoscale
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C. H. Chen, S. J. Chang, S.
P. Chang, M. J. Li, I. C. Chen, T. J. Hsueh and C. L. Hsu,
"Electroluminescence from n-ZnO nanowires/p-GaN
heterostructure light-emitting diodes", Appl. Phys. Lett., Vol. 95, No. 22, Art. no.
223101, November 2009. 143. R. M. Lin,
Y. C. Lu, S. F. Yu, Y. C. S. Wu, C. H. Chiang, W. C. Hsu and S.
J. Chang, "Enhanced
extraction and efficiency of blue light-emitting diodes prepared
using two-step-etched patterned sapphire substrates", J. Electrochem.
Soc., Vol.
156, No. 11, pp. H874-H876, November 2009. 144. S. C. Shei, W. C.
Lai, J. K. Sheu, I. H. Hung and S. J. Chang, "The
output power enhancements of GaN-based blue light-emitting diodes with highly
reflective Ag/Cr/Au trilayer omnidirectional reflective electrode pads",
Jpn. J. Appl. Phys., Vol.
48, No. 10, Art. no. 102103, October 2009. 145. P. C. Chang, K. H. Lee, S. J. Chang, Y. K. Su and C. H. Liu, "AlGaN/GaN two-dimensional electron gas Schottky barrier photodiodes with multiple MgxNy/GaN layers", Semicond. Sci. Technol., Vol. 24, No. 10, Art. no. 105005, October 2009. 146.
C. H. Hsiao, S. J. Chang, S.
B. Wang, S. C. Hung, S. P. Chang, T. C. Li, W. J. Lin and B. R. Huang,
"MBE growth of ZnSe nanowires on oxidized silicon substrate", Superlattice
Microst., Vol.
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W. Y. Weng, R. W. Chuang, S.
J. Chang, W. C. Lai, T. J. Hsueh, S. C. Shei, X. F. Zeng and S.
L. Wu, "GaN MSM photodetectors
with a semi-insulating AlInN cap layer and sputtered ITO transparent
electrodes", Electrochem.
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October 2009. 148.
W. Y. Weng, T. J. Hsueh, S. J. Chang, S. P. Chang
and C. L. Hsu, "Laterally-grown ZnO-nanowire photodetectors on glass
substrate", Superlattice Microst.,
Vol. 46, No. 5, pp. 797-802, September 2009. 149. Z. S. Hu, F. Y.
Hung, S. J. Chang, K. J. Chen, W. L. Wang, S. J. Young and
T. P. Chen, "Two-step etching
mechanism of Ag-Si nanostructure with various Ag nanoshape depositions",
Maters. Trans.,
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J. Chang and S. Wu, "Effects of phosphorus implantation on
the activation of magnesium doped in GaN", Jpn. J. Appl. Phys.,
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H. Y. Lin, S. L. Wu, S. J. Chang, C. W. Kuo.
Y. P. Wang and S. C. Hung, "DC and 1/f noise
characteristics of strained-Si nMOSFETs using chemical-mechanical-polishing
technique", Solid State Electron.,
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8, pp. 905-908, August 2009. 152.
C. W. Kuo, S. L. Wu, S. J. Chang, H. Y. Lin.
Y. P. Wang and S. C. Hung, "Investigation of
interface characteristics in strained-Si nMOSFETs", Solid State Electron., Vol. 53, No. 8, pp. 897-900, August 2009. 153. C. M. Tsai, J. K. Sheu, W. C. Lai, M. L. Lee, S.
J. Chang, C. S.
Chang, T. K. Ko and C. F. Shen, "GaN-based LEDs output power improved by
textured GaN/sapphire interface using in situ SiH4 treatment
process during epitaxial growth", IEEE
J. Sel. Top. Quan. Electron., Vol. 15, No. 4, pp. 1276-1280, July/August
2009. 154. S. J.
Chang, W. S. Chen, S. C.
Shei, C. F. Shen, T. K. Ko, J. M. Tsai, W. C. Lai, J. K. Sheu, A. J. Lin and
S. C. Hung, "GaN-based power flip-chip LEDs with Cu submount", IEEE J. Sel. Top. Quan. Electron.,
Vol. 15, No. 4, pp. 1287-1291, July/August 2009. 155. K. H. Lee, P. C.
Chang, S. J. Chang, Y. C. Wang, C. L. Yu and
S. L. Wu, "AlGaN/GaN Schottky
barrier UV photodetectors with a GaN sandwich layer", IEEE Sensors
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C. H.
Lan, J. D. Hwang, S. J. Chang, Y. C. Lin, Y. C. Cheng, W. J. Lin, J. C.
Lin and K. J. Chang,
"Nitride-based metal-insulator-semiconductor capacitors with
liquid-phase deposition oxide and (NH4)2Sx pretreatment prepared on
sapphire substrates",
Semicond. Sci. Technol., Vol. 24, No. 7, Art. no. 075026, July 2009. 157.
C. H. Chen, S. J. Chang, S. P. Chang,
M. J. Li, I. C. Chen, T. J. Hsueh and C. L. Hsu,
"Novel fabrication of UV
photodetector based on ZnO nanowire/p-GaN heterojunction", Chem. Phys. Lett., Vol. 476, No. 1-3, pp. 69-72,
July 2009. 158. K. H. Lee, P. C.
Chang, S. J. Chang, Y. K. Su, Y. C. Wang,
C. L. Yu and S. L. Wu, "Al0.25Ga0.75N/GaN
Schottky barrier photodetectors with an Al0.3Ga0.7N
intermediate layer", J. Electrochem.
Soc., Vol.
156, No. 7, pp. J199-J202, July 2009. 159.
S. P. Chang, R. W. Chuang, S.
J. Chang, C. Y. Lu, Y. Z. Chiou and S. F. Hsieh, "Surface HCl treatment in ZnO
photoconductive sensors", Thin
Solid Films, Vol. 517, No. 17, pp. 5050-5053, July 2009. 160.
S. P. Chang, R. W. Chuang, S.
J. Chang, C. Y. Lu, Y. Z. Chiou and S. F. Hsieh, "MBE n-ZnO/MOCVD p-GaN heterojunction
light-emitting diode", Thin
Solid Films, Vol. 517, No. 17, pp. 5054-5056, July 2009. 161.
C. Y. Lu, S. P. Chang, S.
J. Chang, T. J. Hsueh, C. L. Hsu, Y. Z. Chiou and I. C. Chen,
"A
lateral ZnO nanowire UV photodetector prepared on a ZnO:Ga/glass template",
Semicond. Sci. Technol., Vol. 24, No. 7,
Art. no. 075005, July 2009. 162.
S.
J. Chang, W. S. Chen, S. C. Shei, C. T.
Kuo, T. K. Ko, C. F. Shen, J. M. Tsai, W. C. Lai, J. K. Sheu and A. J. Lin, "High-brightness InGaN-GaN
power flip-chip LEDs", IEEE/OSA
J. Lightwave Technol., Vol.
27, No. 12, pp. 1985-1989, June 2009. 163. W. Y. Weng, S.
J. Chang, T. J. Hsueh, C. L. Hsu, M. J. Li and W. C. Lai, "AlInN resistive ammonia gas
sensors", Sensors and Actuators B, Vol. 140, No. 1, pp.
139-142, June 2009. 164. Y. S. Wang, S. J. Chang, C. L. Tsai, M. C. Wu, Y. Z. Chiou, Y. H.
Huang and W. Lin, "High-speed InGaAs P-I-N photodetector with planar
buried heterostructure", IEEE Tran. Electron. Dev., Vol. 56, No. 6, pp. 1347-1350,
June 2009. 165. K. J. Chen, F. Y.
Hung, S. J. Chang and S. J. Young, "Optoelectronic characteristics of UV photodetector based on ZnO
nanowire thin films", J. Alloys Compounds, Vol. 479, No. 1-2, pp.
674-677, June 2009. 166. K. H. Lee, P. C.
Chang, S. J. Chang, Y. C. Wang, C. L. Yu and S. L. Wu, "Characterization of AlGaN/GaN
metal-semiconductor-metal photodetectors with a low-temperature AlGaN
interlayer", IEEE Sensors Journal, Vol. 9, No. 6, pp. 723-727,
June 2009. 167.
K. T. Lam, S. C. Hung, C. F. Shen, C.
H. Liu, Y. X. Sun and S. J. Chang, "Effects of the sapphire
substrate thickness on the performances of GaN-based LEDs",
Semicond. Sci. Technol., Vol. 24, No. 6,
Art. no. 065002, June 2009. 168.
S. P. Chang, S. J. Chang, C.
Y. Lu, Y. Z. Chiou, R. W. Chuang and H. C. Lin, "Low-frequency noise characteristics
of GaN-based UV photodetectors with AlN/GaN buffer layers prepared on Si
substrates", J. Crystal Growth,
Vol. 311,
No. 10, pp. 3003-3006, May 2009. 169. K. J. Chen, F. Y.
Hung and S. J. Chang, "Structural
characteristic, Raman analysis and optical properties of indium-doped ZnO
nanoparticles prepared by sol-gel method", J. Nanosci. Nanotechnol., Vol. 9, No. 5, pp. 3325-3329, May 2009. 170. W. Y. Weng, S.
J. Chang, W. C. Lai, T. J. Hsueh, S. C. Shei, X. F. Zeng, S. L.
Wu and S. C. Hung, "GaN MSM photodetectors
with a semi-insulating Mg-doped AlInN cap layer", IEEE
Photon. Technol. Lett., Vol.
21, No. 8, pp. 504-506, April 2009. 171. D. S. Kuo, S.
J. Chang, T. K. Ko, C. F. Shen, S. J. Hon and S. C. Hung, "Nitride-based LEDs with phosphoric acid
etched undercut sidewalls", IEEE
Photon. Technol. Lett., Vol.
21, No. 8, pp. 510-512, April 2009. 172. K. J. Chen, F. Y.
Hung, S. J. Chang, and S. J. Young, "Optoelectronic characteristics of UV photodetector based
on ZnO nanopillar thin films prepared by sol-gel method", Mater. Tran., Vol. 50, No. 4, pp. 922-925,
April 2009. 173. C. Y. Lu, S. P. Chang, S.
J. Chang, T. J. Hsueh, C. L. Hsu, Y. Z Chiou and I. C. Chen, "ZnO nanowire-based
oxygen gas sensor", IEEE
Sensors Journal, Vol. 9, No. 4, pp. 485-489, April
2009. 174. S. L. Wu, C. Y. Wu, H. Y. Lin, C. W. Kuo, S. H. Chen, C. H. Lin and S.
J. Chang, "Impact of Ge content on flicker noise behavior
of strained-SiGe p-type metal-oxide-semiconductor field-effect transistors",
Jpn. J. Appl. Phys.,
Vol. 48, No. 4, Art. no. 04C036, April 2009. 175. P. C. Huang, T. K. Kang, B. C. Wang, S.
L. Wu and S. J Chang, "Study of enhanced impact
ionization in strained-SiGe p-channel metal-oxide-semiconductor field-effect
transistors", Jpn. J. Appl.
Phys., Vol. 48, No. 4, Art. no. 04C038, April 2009. 176. Y. S. Wang, S. J. Chang, S.
T. Chou S. Y. Lin and W. Lin, "High-responsivity InGaAs/InP
quantum-well infrared photodetectors prepared by metal organic chemical vapor
deposition", Jpn. J. Appl.
Phys., Vol. 48, No. 4, Art. no. 04C108, April 2009. 177. C. H. Hsiao, S. J. Chang, S. B. Wang, S. P. Chang,
T. C. Li, W. J. Lin, C. H. Ko, T. M. Kuan and B. R. Huang, "ZnSe nanowire photodetector
prepared on oxidized silicon substrate by molecular-beam epitaxy",
J. Electrochem. Soc., Vol. 156, No. 4, pp. J73-J76,
April 2009. 178. K. J. Chen, F. Y.
Hung, S. J. Chang and Z. S. Hu, "Microstructures, optical and
electrical properties of In-doped ZnO thin films prepared by sol-gel method", Appl. Surface Sci., Vol. 255, No. 12, pp.
6308-6312, April 2009. 179.
S. J. Young, L. W. Ji, S.
J. Chang, T. H. Meen and K. J. Chen, "A ZnO-based MOSFET
with a photo-CVD gate oxide", Semicond.
Sci. Technol., Vol. 24, No. 3, Art. no. 035010, March 2009. 180. C. H. Kuo, Y. K. Fu, C. L. Yeh, C. J.
Tun, P. H. Chen, W. C. Lai and S. J. Chang, "Nitride-based asymmetric
two-step light-emitting diode with In0.08Ga0.92N
shallow step", IEEE Photon. Technol. Lett., Vol. 21, No. 6, pp. 371-373, March
2009. 181. S. J. Chang, K. H. Lee, P. C.
Chang, Y. C. Wang, C. H. Kuo and S. L. Wu, "AlGaN/GaN Schottky barrier photodetector with multi-MgxNy/GaN
buffer", IEEE
Sensors Journal, Vol.
9, No. 2, pp. 87-92, February 2009. 182. H. Y. Lin, S. L. Wu,
S.
J. Chang, Y. P. Wang, Y. M. Lin and C. W. Kuo, "Strained-Si nMOSFET with a
raised source/drain structure", Semicond. Sci. Technol., Vol. 24, No. 1, Art. no. 015015, January 2009. 183. K. H. Lee, R. W.
Chuang, P. C. Chang, S. J. Chang, Y. C. Wang, C. L. Yu,
J. C. Lin and S. L. Wu, "Nitride-based
MSM photodetectors with a HEMT structure and a low-temperature AlGaN
intermediate layer", J. Electrochem. Soc., Vol. 155, No. 12, pp.
H959-H963, December 2008. 184. S. J. Chang, T.
J. Hsueh, I. C. Chen, S. F. Hsieh, S. P. Chang, C. L. Hsu, Y. R. Lin and B.
R. Huang, "Highly sensitive ZnO nanowire acetone vapor
sensor with Au adsorption", IEEE
Tran. Nanotechnol., Vol. 7, No. 6, pp. 754-759,
November 2008. 185. T. J. Wang, C. H.
Ko, H. N. Lin, S. J. Chang, S. L. Wu, T. M. Kuan and W. C. Lee, "Investigation
of metallized source/drain extension for high-performance strained NMOSFETs",
IEEE
Tran. Electron. Dev., Vol.
55, No. 11, pp. 3221-3226, November 2008. 186. S.
J. Chang, Y. D. Jhou, Y. C. Lin, S. L. Wu, C. H. Chen, T. C. Wen
and L. W. Wu, "GaN-based MSM
photodetectors prepared on patterned sapphire substrates", IEEE
Photon. Technol. Lett., Vol.
20, No. 22, pp. 1866-1868, November 2008. 187. J. J. Huang, Y. K. Su, F. S. Juang,
Y. H. Liu and S. J. Chang, "Effect of the phase shift in a periodic
anode on the emission spectra of top-emitting organic light-emitting diodes", IEEE
Photon. Technol. Lett., Vol.
20, No. 21, pp. 1784-1786, November 2008. 188. Y. S. Wang, S. J. Chang, Y. Z. Chiou and W.
Lin, "Noise characteristics of
high performance InGaAs PIN photodetectors prepared by MOCVD", J. Electrochem. Soc., Vol. 155, No. 11, pp.
J307-J309, November 2008. 189. S. J. Chang, K.
H. Lee, P. C. Chang, Y. C. Wang, C. L. Yu, C. H. Kuo and S. L. Wu, "GaN-based Schottky barrier photodetectors
with a 12-pair MgxNy-GaN buffer layer", IEEE J. Quan. Electron., Vol. 44, No. 10, pp. 916-921,
October 2008. 190. Y. K. Su, S.
J. Chang, Y. D. Jhou, S. L. Wu and C. H. Liu, "GaN metal-semiconductor-metal
photodetectors with SiN/GaN nucleation layer", IEEE
Sensors Journal, Vol.
8, No. 10, pp. 1693-1697, October 2008. 191. K. H. Lee, P. C.
Chang, S. J. Chang, C. L. Yu, Y. C. Wang and S. L. Wu, "Visible-blind
metal-semiconductor-metal photodetectors by capping an in situ
low-temperature AlN layer", J. Electrochem. Soc., Vol. 155, No. 10, pp.
J287-J289, October 2008. 192. K. H. Lee, S.
J. Chang, P. C. Chang, Y. C. Wang and C. H. Kuo, "AlGaN/GaN Schottky barrier
diodes with multi-MgxNy/GaN buffer",
J. Electrochem. Soc., Vol. 155, No. 10, pp.
H716-H719, October 2008. 193. H. Y. Lin, S. L. Wu,
S.
J. Chang, Y. P. Wang and C. W. Kuo, "Low-frequency noise of strained Si nMOSFETs fabricated on
a chemical-mechanical-polished SiGe virtual substrate", Semicond. Sci. Technol., Vol. 23, No. 10, Art. no.
105022, October 2008. 194. S. J. Chang, C.
F. Shen, M. S. Hsieh, C. T. Kuo, T. K. Ko, W. S. Chen and S. C. Shei, "Nitride-based LEDs with a hybrid Al mirror
+ TiO2/SiO2 DBR backside reflector", IEEE/OSA
J. Lightwave Technol., Vol.
26, No. 17, pp. 3131-3136, September 2008. 195. K. H. Lee, S. J. Chang, P. C. Chang, Y. C.
Wang and C. H. Kuo, "High
quality GaN-based
Schottky barrier diodes", Appl. Phys. Lett., Vol. 93, No. 13, Art. no. 132110,
September 2008. 196. T. J. Hsueh, S.
J. Chang, C. L. Hsu, Y. R. Lin and I. C. Chen, "ZnO nanotube ethanol gas
sensors", J. Electrochem.
Soc., Vol.
155, No. 9, pp. K152-K155, September 2008. 197.
S. J. Young, L. W. Ji, S.
J. Chang, Y. P. Chen and S. M. Peng, "ZnO Schottky diodes with
iridium contact electrodes", Semicond.
Sci. Technol., Vol. 23, No. 8, Art. no. 085016, August 2008. 198. C. W. Kuo, S. L. Wu,
S.
J. Chang, H. Y. Lin and Y. P. Wang, "Characteristics of
strained-Si nMOSFET using nickel silicide source/drain", J.
Electrochem. Soc., Vol. 155, No. 8, pp. H611-H614, August 2008. 199. C. C. Huang, R.
W. Chuang, S. J. Chang, J. C. Lin, Y. C. Cheng and
W. J. Lin, "MOCVD growth of InN on Si(111) with various buffer
layers", J. Electron. Mater., Vol. 37, No. 8,
pp. 1054-1057, August 2008. 200. S. P. Chang, R. W. Chuang, S.
J. Chang, Y. Z.
Chiou, C. Y. Lu, T. K. Lin, C. H. Kuo and H. M. Chang, "Optical and electrical
characteristics of ZnO films grown on nitridated Si(100) substrate with GaN
and ZnO double buffer layers", IEEE J. Sel. Top. Quan. Electron., Vol. 14, No. 4, pp. 1058-1063,
July/August 2008. 201. K. J. Chen, T. H.
Fang, F. Y. Hung, L. W. Ji, S. J. Chang, S. J. Young
and Y. J. Hsiao, "The crystallization and physical properties of
Al-doped ZnO nanoparticles", Appl.
Surface Science, Vol. 254, No. 18, pp. 5791-5795, July 2008. 202. J. C. Lin, Y. K. Su,
S.
J. Chang, W. H. Lan, W. R. Chen, K. C. Huang, Y. C. Cheng and W.
J. Lin, "Low dark current GaN
p-i-n photodetectors with a low-temperature AlN interlayer", IEEE Photon. Technol. Lett.,, Vol. 20, No.
14, pp. 1255-1257, July 2008. 203. C. H. Jang, J. K.
Sheu, C. M. Tsai, S. C. Shei, W. C. Lai and S. J. Chang, "Effect of thickness of the p-AlGaN electron
blocking layer on the improvement of ESD characteristics in GaN-Based LEDs",
IEEE Photon. Technol. Lett.,,
Vol. 20, No. 13, pp. 1142-1144, July 2008. 204. S. E. Wu, T. H. Hsueh, C. P. Liu, J. K.
Sheu, W. C. Lai and S. J. Chang, "Non-lithographic nanopatterning of
InGaN/GaN multiple quantum well nanopillars by focused ion beams", Phys. Status Solidi C, Vol. 5, No.
6, pp. 2186-2188, June 2008. 205. H. Hung, K. T. Lam, S.
J. Chang, C. H. Chen, H. Kuan and Y. X. Sun, "InGaN/GaN
multiple-quantum-well LEDs with Si-doped barriers", J. Electrochem. Soc., Vol. 155, No. 6, pp. H455-H458, June 2008. 206.
K. H. Lee,
P. C. Chang,
S. J. Chang, C. L. Yu,
Y. C. Wang
and S. L. Wu, "GaN MSM photodetectors with an unactivated Mg-doped GaN cap
layer and sputtered ITO electrodes", J.
Electrochem. Soc., Vol. 155, No. 6, pp. J165-J167, June 2008. 207. K. T. Lam, P. C. Chang, S. J. Chang, C. L. Yu, Y.
C. Lin, Y. X. Sun and C. H. Chen,
"Nitride-based photodetectors with unactived Mg-doped cap layer", Sensors and Actuators A, Vol.
143, No. 2, pp. 191-195, May 2008. 208. T. K.
Kang, P. C. Huang, Y. H. Sa, S. L. Wu and S. J. Chang,
"Investigation of impact ionization in
strained-Si n-channel metal-oxide-semiconductor field-effect transistors",
Jpn. J. Appl. Phys.,
Vol. 47, No. 4B, pp. 2664-2667,
April 2008. 209. S. E. Wu, T. H.
Hsueh, C. P. Liu, J. K. Sheu, W. C. Lai and S. J. Chang,
"Focused ion beam milled InGaN/GaN multiple
quantum well nanopillars ", Jpn. J. Appl. Phys., Vol. 47, No. 4B, pp. 3130-3133, April 2008. 210. J. C. Lin, Y. K. Su,
S.
J. Chang, W. H. Lan, K. C. Huang, W. R. Chen, C. C. Huang, W. J.
Lin, Y. C. Cheng and C. M. Chang,
"GaN
p-i-n photodetectors with an LT-GaN interlayer", IET
Optoelectron., Vol.
2, No. 2, pp. 59-62, April 2008. 211. S. J. Chang, T.
J. Hsueh, I. C. Chen and B. R. Huang,
"Highly sensitive ZnO nanowire CO sensors with the adsorption of Au
nanoparticles", Nanotechnol., Vol. 19, No. 9, Art. no.
175502, April 2008. 212. C. H. Liu, K. T.
Lam, T. K. Ko, S. J. Chang
and Y. X. Sun, "Highly
ESD-reliable, nitride-based heterostructure p-i-n photodetectors with a
p-AlGaN blocking layer", J.
Electrochem. Soc., Vol. 155, No. 4, pp. H232-H234, April 2008. 213. S. J. Chang, T.
J. Hsueh, C. L. Hsu, Y. R. Lin, I. C. Chen and B. R. Huang, "A ZnO nanowire vacuum
pressure sensor", Nanotechnol., Vol. 19, No. 9, Art. no.
095505, March 2008. 214. P. C. Chang, C. L.
Yu, S. J. Chang and C. H. Liu, "GaN Schottky photodiodes with annealed
Ir/Pt semi-transparent contacts", Thin Solid Films, Vol.
516, No. 10, pp. 3324-3327,
March 2008. 215. K. T. Lam, C. L. Yu, P. C. Chang, U. H.
Liaw, S. J. Chang and
J. C. Lin, "AlGaN/GaN
heterostructure grown on 1o-tilt sapphire substrate by
MOCVD", Superlattice Microst., Vol. 43, No. 3, pp. 147-152, March 2008. 216. Y. D. Jhou, S.
J. Chang, Y. K. Su, C. H. Chen, H. C. Lee, C. H. Liu and Y. Y.
Lee, "Quaternary AlInGaN-based photodetectors", IET Optoelectron., Vol. 2, No. 1, pp.
42-45, February 2008. 217. P. C. Chang, K. T.
Lam, C. H. Chen, S. J. Chang, C. L. Yu and C. H. Liu, "AlGaN/GaN
two-dimensional electron gas metal-insulator-semiconductor photodetectors
with sputtered SiO2 layers", IET Optoelectron., Vol. 2, No. 1, pp. 55-57, February 2008. 218. J. C. Lin, Y. K. Su,
S.
J. Chang, W. H. Lan, K. C. Huang, Y. C. Cheng and W. J. Lin, "Improved external
quantum efficiency of GaN p-i-n photodiodes with a TiO2 roughened
surface", IEEE Photon. Technol. Lett., Vol. 20, No. 4, pp. 285-287,
February 2008. 219. T. J. Wang, C. H.
Ko, S. J. Chang, S. L. Wu, T. M. Kuan and W. C. Lee, "The effects of
mechanical uniaxial stress on junction leakage in nanoscale CMOSFETs",
IEEE
Tran. Electron. Dev., Vol.
55, No. 2, pp. 572-577, February 2008. 220.
S. J. Chang,
C. H. Lan, J. D. Hwang,
Y. C. Cheng, W. J. Lin, J. C. Lin and H. Z. Chen, "Sputtered indium-tin-oxide on p-GaN", J. Electrochem. Soc., Vol. 155, No. 2, pp.
H140-H143, February 2008. 221. S. P. Chang, S.
J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, C. F. Kuo, H. M.
Chang and U. H. Liaw, "ZnO
epitaxial layer grown on nitridated Si(100) substrate with HT-GaN/LT-ZnO
double buffer", J. Crystal
Growth, Vol. 310, No. 2, pp. 290-294, February 2008. 222. L. W. Ji, S.
J. Chang, T. H. Fang, S. J. Young and F. S. Juang, "MOVPE-grown ultrasmall
self-organized InGaN nanotips", IEEE Tran. Nanotechnol., Vol. 7, No. 1, pp. 1-4,
January 2008. 223. J. C. Lin, Y. K. Su, S. J. Chang, W. H. Lan, W. R. Chen, Y. C. Cheng. W. J. Lin, Y. C. Tzeng, H. Y. Shin and C. M. Chang,
"InN grown on GaN/sapphire templates at different temperatures by
MOCVD", Optical Mater., Vol. 30, No. 4, pp. 517-520, December 2007. 224. T. J. Hsueh, Y. W.
Chen, S. J. Chang, S. F. Wang, C. L. Hsu, Y. R. Lin, T. S.
Lin and I. C. Chen, "ZnO
nanowire-based CO sensors prepared at various temperatures", J. Electrochem. Soc., Vol. 154, No. 12, pp.
J393-J396, December 2007. 225. T. J. Hsueh, C. L.
Hsu, S. J. Chang, Y. R. Lin, S. P. Chang, Y. Z. Chiou, T.
S. Lin and I. C. Chen, "Crabwise ZnO nanowire UV
photodetector prepared on ZnO:Ga/glass template", IEEE
Tran. Nanotechnol., Vol.
6, No. 6, pp. 595-600, November 2007. 226. S. J. Chang, W. S.
Chen, S. C. Shei, T. K. Ko, C. F. Shen, Y. P. Hsu, C. S. Chang, J. M. Tsai,
W. C. Lai and A. J. Lin, "Highly reliable high-brightness GaN-based flip
chip LEDs", IEEE
Tran. Adv. Packaging, Vol. 30, No. 4, pp. 752-757,
November 2007. 227. P. C. Chang, C. L. Yu, S.
J. Chang, K. H. Lee, C. H. Liu and S. L. Wu, "High-detectivity
nitride-based MSM photodetectors on InGaN-GaN multiquantum well with the
unactivated Mg-doped GaN layer", IEEE J. Quan. Electron., Vol.
43, No. 11, pp. 1060-1064, November 2007. 228. K. T. Lam, S. L. Wu,
S. J. Chang, Y. P. Wang and U. H.
Liaw, "Influence of process flow
on the characteristics of strained-Si nMOSFETs", Electrochem.
Solid State Lett., Vol.
10, No. 11, pp. H331-H333, November 2007. 229. R. W. Chuang, C. L.
Yu, S. J. Chang, P. C. Chang, J. C. Lin and T. M. Kuan, "Crystal growth and
characterization of AlGaN/GaN heterostructures prepared on vicinal-cut
sapphire (0 0 0 1) substrates", J. Crystal Growth, Vol. 308, No. 2, pp. 252-257,
October 2007. 230. T. J. Hsueh, C. L.
Hsu, S. J. Chang and I. C. Chen, "Laterally grown ZnO nanowire ethanol gas
sensors", Sensors and
Actuators B, Vol. 126, No. 2, pp. 473-477,
October 2007. 231. J. C. Lin, Y. K. Su,
S.
J. Chang, W. H. Lan, K. C. Huang, W. R. Chen, C. Y. Huang, W. C.
Lai, W. C. Lin and Y. C. Cheng, "High responsivity of GaN p-i-n photodiode by using low-temperature
interlayer", Appl.
Phys. Lett., Vol. 91, No. 17, Art. no. 173502, October 2007. 232. R. W. Chuang, S. P.
Chang, S. J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, Y. C.
Lin, C. F. Kuo and H. M. Chang,
"Gallium nitride metal-semiconductor-metal photodetectors prepared on
silicon substrates", J. Appl. Phys., Vol. 102, No. 7, Art.
no. 073110, October 2007. 233. S. P. Chang, S.
J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, Y. C. Lin, C. F. Kuo
and H. M. Chang, "ZnO photoconductive sensors epitaxially grown on sapphire substrates", Sensors and Actuators A, Vol. 140, No.
1, pp. 60-64, October 2007. 234. S. J. Chang, S. C. Wei, Y. K. Su
and W. C. Lai, "Nitride-based
dual-stage MQW LEDs", J. Electrochem. Soc., Vol. 154, No. 10, pp.
H871-H874, October 2007. 235. P. C. Chang, C. L. Yu, S.
J. Chang, Y. C. Lin and S. L. Wu, "Low-noise and high-detectivity GaN UV photodiodes
with a low-temperature AlN cap layer", IEEE Sensors Journal, Vol.
7, No. 9, pp. 1289-1292, September 2007. 236. K. T. Lam, C. L. Yu,
P. C. Chang, U. H. Liaw, J. C. Lin and S. J. Chang, "Al0.22Ga0.78N/GaN
HFETs prepared on vicinal-cut sapphire substrates", J. Electrochem. Soc., Vol. 154, No. 9, pp.
H811-H813, September 2007. 237. J. D. Jhou, S. J. Chang, Y. K. Su, Y. Y. Lee,
C. H. Liu and H. C. Lee, "GaN
Schottky barrier photodetectors with SiN/GaN nucleation layer", Appl. Phys. Lett., Vol.
91, No. 10, Art. no. 103506, September 2007. 238. S. J. Young, L. W.
Ji, S. J. Chang, T. H. Fang and T. J.
Hsueh, "Nanoindentation of vertical ZnO nanowires",
Physica E, Vol. 39, No. 2, pp.
240-243, September 2007. 239. P. C. Chang, C. L. Yu, S.
J. Chang, Y. C. Lin and S. L. Wu, "Low-noise and high-detectivity GaN-based UV
photodiode with a semi-insulating Mg-doped GaN cap layer",
IEEE Sensors Journal, Vol.
7, No. 9, pp. 1270-1273, September 2007. 240. H. Hung, S. J. Chang, Y. C. Lin, H. Kuan
and R. M. Lin, "AlGaN MSM photodetectors with recess-etched
LT-AlGaN cap layers", IET
Optoelectron., Vol. 1, No. 4, pp. 147-149, August 2007. 241. S. H. Yang, C.
Y. Lu and S. J. Chang, "Luminescence enhancement mechanism of
ZnGa2O4 phosphor screen with an In2O3
buffer layer ", J. Electrochem.
Soc., Vol.
154, No. 8, pp. J229-J233, August 2007. 242. G. H. Yang, J. D. Hwang, C. H. Lan, C.
M. Chan, H. Z. Chen and S. J. Chang, "Indium-tin-oxide
metal-insulator-semiconductor GaN ultraviolet photodetectors using
liquid-phase-deposition oxide", Jpn. J. Appl. Phys., Vol. 46, No. 8A, pp. 5119-5121,
August 2007. 243. T. J. Hsueh, Y. W.
Chen, S. J. Chang, S. F. Wang, C. L. Hsu, Y. R. Lin, T. S.
Lin and I. C. Chen, "ZnO nanowire-based CO sensors prepared on patterned ZnO:Ga/SiO2/Si
templates", Sensors
and Actuators B, Vol. 125, No. 2, pp. 498-503,
August 2007. 244. C. Y. Hu, S. C.
Chen, J. F. Chen, S. J. Chang, M. H. Wang, V. Yeh and J. C. Chen, "Ultrathin decoupled plasma
nitridation SiON gate dielectrics prepared with various RF powers", J. Vacuum Sci. Technol. B, Vol.
25, No. 4, pp. 1298-1304, July/August 2007. 245. S. H. Yang, T. J.
Hsueh and S. J. Chang, "Effect of substrate properties on
luminescence of white ZnGa2O4 phosphor ",
Jpn. J. Appl. Phys., Vol. 46, No. 7A, pp.
4166-4169, July 2007. 246. C. H. Lee, S. L. Wu,
S. H. Chen, C. W. Kuo, Y. M. Lin, J. F. Chen and S. J. Chang, "Negative bias temperature instability
characteristics of strained SiGe pMOSFETs", Electron. Lett., Vol. 43, No. 15, pp. 835-836, July 2007. 247. T. J. Hsueh, C. L.
Hsu, S. J. Chang, P.
Y. Guo, J. H. Hsieh and I. C. Chen,
"Cu2O/n-ZnO nanowire solar cells on
ZnO:Ga/glass templates", Scripta
Materialia, Vol. 57,
No. 1, pp. 53-56, July 2007. 248. C. Y. Lu, S. P. Chang, S.
J. Chang, Y. Z Chiou, C. F. Kuo, H. M. Chang C. L. Hsu and I. C. Chen, "Noise characteristics of ZnO-nanowire
photodetectors prepared on ZnO:Ga/glass templates", IEEE Sensors Journal, Vol.
7, No. 7, pp. 1020-1024, July 2007. 249. S. P. Chang, S.
J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, Y. C. Lin, C. F. Kuo
and H. M. Chang, "Low-frequency
noise characteristics of epitaxial ZnO photoconductive sensors", J. Electrochem. Soc., Vol. 154, No. 7, pp.
J209-J211, July 2007. 250. T. J. Hsueh, S. J. Chang, C. L. Hsu, Y. R. Lin
and I. C. Chen, "Highly sensitive ZnO
nanowire ethanol sensor with Pd adsorption", Appl.
Phys. Lett., Vol.
91, No. 5, Art. no. 053111, July 2007. 251. S. J. Chang, C.
F. Shen, W. S. Chen, C. T. Kuo, T. K. Ko, S. C. Shei and J. K. Sheu, "Nitride-based light
emitting diodes with indium tin oxide electrode patterned by imprint
lithography", Appl.
Phys. Lett., Vol.
91, No. 1, Art. no. 013504, July 2007. 252. C. H. Kuo, S.
J. Chang and H. Kuan,
"GaN-based
indium-tin-oxide light emitting diodes with nanostructured silicon upper
contacts", IET
Optoelectron., Vol. 1, No. 3, pp. 110-112, June 2007. 253. S. J. Young, L. W.
Ji, S. J. Chang, Y. P. Chen, K. T. Lam,
S. H. Liang, X. L. Du, Q. K. Xie and Y. S. Sun, "ZnO metal-semiconductor-metal ultraviolet photodetectors with iridium
contact electrodes", IET
Optoelectron., Vol. 1, No. 3, pp. 135-139, June 2007. 254. J. J. Horng, Y. K.
Su, S. J. Chang, W. S. Chen and S. C.
Shei, "GaN-based power LEDs with
CMOS ESD protection circuits",
IEEE Tran. Dev. Mater. Reliability, Vol. 7, No. 2, pp.
340-346, June 2007. 255. C. H. Liu, S.
J. Chang, K. T. Lam and Y. S. Sun, "SiGe doped-channel
field-effect transistor", Mater. Chem. Phys., Vol. 103, No. 2-3, pp. 222-224, June
2007. 256. C. L. Yu, P. C.
Chang, S. J. Chang and S. L. Wu, "High-detectivity GaN MSM photodetectors with
low-temperature GaN cap layers and Ir/Pt contact electrodes", Electrochem. Solid State Lett., Vol. 10, No. 6, pp.
H171-H174, June 2007. 257. S. J. Chang, C.
F. Shen, W. S. Chen, T. K. Ko, C. T. Kuo, K. H. Yu, S. C. Shei and Y. Z.
Chiou, "Nitride-based
LEDs with an insulating SiO2 layer underneath p-pad electrodes", Electrochem. Solid State Lett., Vol. 10, No. 6, pp.
H175-H177, June 2007. 258. S. J. Chang, C.
L. Yu, P. C. Chang and Y. C. Lin, "GaN
ultraviolet photodetector with a low-temperature AlN cap layer", Electrochem. Solid State Lett., Vol. 10, No. 6, pp.
H196-H198, June 2007. 259. S.
J. Young, L. W. Ji, S. J. Chang, T. H.
Fang, T. J. Hsueh, T. H. Meen and I. C. Chen,
"Nanoscale mechanical characteristics
of vertical ZnO nanowires grown on ZnO:Ga/glass templates", Nanotechnol., Vol. 18, No. 22, Art. no.
225603, June 2007. 260. C. L. Yu, R. W.
Chuang, S. J. Chang, P. C. Chang, K. H.
Lee and J. C. Lin, "InGaN-GaN MQW
metal-semiconductor-metal photodiodes with semi-insulating Mg-doped GaN cap
layers", IEEE
Photon. Technol. Lett., Vol. 19, No. 11, pp. 846-848, June 2007. 261. J. J. Horng, Y. K.
Su, S. J. Chang, T. K. Ko and S. C.
Shei, "Nitride-based Schottky
barrier sensor module with high electrostatic discharge reliability", IEEE Photon. Technol. Lett.,
Vol. 19, No. 10, pp. 717-719, May 2007. 262. C. F. Shen, S.
J. Chang, W. S. Chen, T. K. Ko, C. T. Kuo and S. C. Shei, "Nitride-based high-power flip-chip LED with
double-side patterned sapphire substrate", IEEE Photon. Technol. Lett., Vol. 19, No. 10, pp. 780-782, May
2007. 263. C. H. Lin, S. L. Wu, C. Y. Wu, T. K.
Kang, K. C. Huang and S.
J. Chang, "Impact of SiN
on performance in novel complementary metal-oxide-semiconductor architecture
using substrate strained-SiGe and mechanical strained-Si technology", Jpn. J. Appl. Phys.,
Vol. 46, No. 5A, pp. 2882-2886, May 2007. 264.
P. C. Chang, C. L. Yu, C. H. Liu, S. J. Chang, Y. K. Su, R. W.
Chuang and Y. J. Chiou, "Ir/Pt
Schottky contact oxidation for nitride-based Schottky barrier diodes", Phys. Status Solidi C, Vol. 4, No.
5, pp. 1625-1628, May 2007. 265.
H. Hung, K. T. Lam, S.
J. Chang, H. Kuan,
C. H. Chen and U. H. Liaw, "Effects
of thermal annealing on In-induced metastable defects in InGaN films", Mater. Sci. Semicond. Processing, Vol.
10, No. 2-3, pp. 112-116, April-June 2007. 266. S.
J. Chang, H. Hung, Y. C. Lin, M. H. Wu, H.
Kuan and R. M. Lin, "AlGaN
ultraviolet metal-semiconductor-metal photodetectors with
low-temperature-grown cap layers", Jpn. J. Appl. Phys., Vol. 46, No. 4B, pp. 2471-2473,
April 2007. 267. S.
J. Chang, T. K. Ko, J. K. Sheu, S. C. Shei, W. C. Lai, Y. Z.
Chiou, Y. C. Lin, C. S. Chang, W. S. Chen and C. F. Shen, "AlGaN
ultraviolet metal-semiconductor-metal photodetectors grown on Si substrates", Sensors and Actuators A, Vol. 135, No.
2, pp. 502-506, April 2007. 268. S.
J. Young, L. W. Ji, S. J. Chang, S. H.
Liang, K. T. Lam, T. H. Fang, K. J. Chen, X. L. Du and Q. K. Xue,
"ZnO-based MIS
photodetectors", Sensors and
Actuators A, Vol. 135, No.
2, pp. 529-533, April 2007. 269. C. L. Yu, P. C.
Chang, S. J. Chang and S. L. Wu, "High-detectivity GaN MSM photodetectors with
low-temperature GaN cap layers and Ir/Pt contact electrodes", Electrochem.
Solid State Lett., Vol. 10, No.
6, pp. H171-H174, March 2007. 270. Y. P. Hsu, S. J. Chang, W. S. Chen, J.
K. Sheu, J. Y. Chu and C. T. Kuo,
"Crack-free high-brightness InGaN/GaN LEDs on Si(111) with initial AlGaN
buffer and two LT-Al interlayers", J.
Electrochem. Soc., Vol. 154, No.
3, pp. H191-H193, March 2007. 271. T. J. Hsueh, C. L.
Hsu, S. J. Chang, Y. R. Lin, T. S. Lin and I. C. Chen, "Growth and characterization
of sparsely dispersed ZnO nanowires", J. Electrochem. Soc., Vol. 154, No. 3, pp. H153-H156, March 2007. 272. T. J. Hsueh, C. L.
Hsu, S. J. Chang, C.
Y. Lu, Y. R. Lin and I. C.
Chen, "Crabwise ZnO nanowires: growth and field
emission properties", J.
Nanosci. Nanotechnol., Vol. 7,
No. 3, pp. 1076-1079, March 2007. 273. J. C. Lin, Y. K. Su,
S.
J. Chang, W. H. Lan, K. C. Huang, W. R. Chen, Y. C. Cheng and W.
J. Lin, "GaN-based
light-emitting diodes prepared on vicinal sapphire substrates", IET Optoelectron., Vol. 1, No. 1, pp.
23-26, February 2007. 274. C. F. Shen, S.
J. Chang, T. K. Ko, S. C. Shei, W. C. Lai, C. S. Chang, W. S.
Chen, S. P. Huang, Y. W. Ku and R. H. Horng, "Nitride-based high power flip-chip near-UV LEDs with
reflective submount", IET
Optoelectron., Vol. 1, No. 1, pp. 27-30, February 2007. 275. S. J. Chang, T.
K. Lin, Y. Z. Chiou, B. R. Huang, S. P. Chang, C. M. Chang, Y. C. Lin and C.
C. Wong, "ZnSe based
white light emitting diode on homoepitaxial ZnSe substrate", IET Optoelectron., Vol. 1, No. 1, pp.
39-41, February 2007. 276. T. J. Wang, H. W.
Chen, P. C. Yeh, C. H. Ko, S. J. Chang, J. Yeh, S. L.
Wu, C. Y. Lee, W. C. Lee and D. D. Tang, "Effects of mechanical uniaxial stress on SiGe HBT
characteristics", J. Electrochem. Soc., Vol. 154, No. 2, pp. H105-H108, February
2007. 277. C. H. Liu, K. T.
Lam, S. J. Chang, C. K. Wang and Y. S. Sun, "Flicker noise of AlGaN/GaN
metal-oxide-semiconductor heterostructure field-effect transistor with a
photo-CVD SiO2 Layer", J. Electrochem. Soc., Vol. 154, No. 2, pp. H119-H123, February
2007. 278. C. L. Yu, C. H.
Chen, S. J. Chang and P. C. Chang,
"GaN
metal-semiconductor-metal ultraviolet photodetectors with Ir/Pt contact electrodes", J.
Electrochem. Soc., Vol. 154, No.
2, pp. J71-J72, February 2007. 279. T. K. Lin, K. T.
Lam, S. J. Chang, Y. Z. Chiou and S. P. Chang,
"Ni/Au contacts on homoepitaxial
p-ZnSe with surface oxygen plasma treatments", J.
Vac. Sci. Technol. B, Vol.
25, No. 1, pp. 213-216,
January/February 2007. 280. H. Hung, C. H. Chen, S. J. Chang, H. Kuan, R. M.
Lin and C. H. Liu, "Kinetics of persistent photoconductivity in
InGaN epitaxial films grown by MOCVD", J. Crystal Growth, Vol. 298, No. 1, pp. 246-250,
January 2007. 281. M. L. Tu, Y. K. Su, S. J. Chang and
R. W. Chuang, "GaN UV photodetector by using transparency
antimony-doped tin oxide electrode", J. Crystal Growth, Vol. 298, No. 1, pp. 744-747,
January 2007. 282. Y. P. Wang, S. L. Wu
and S. J. Chang, "Tradeoff
between short channel effect and mobility in strained-Si nMOSFETs", Semicond. Sci. Technol., Vol.
22, No. 1, pp. S50-S54, January 2007. 283. C. H. Lin, Y. K. Su,
Y. Z. Juang, C. F. Chiou, S. J. Chang, J. F. Chen and
C. H. Tu, "The optimized geometry
of the SiGe HBT power cell for 802.11a WLAN applications",
IEEE
Microwave Wireless Components Lett., Vol. 17, No. 1, pp. 49-51, January 2007. 284. W. C. Lai, K. T.
Lam, C. H. Liu and S. J. Chang,
"InGaN/GaN MQW structures prepared with various In and Ga flow
rates", International J. Electron., Vol. 94, No. 1, pp. 1-7, January 2007. 285. Y. P. Wang, S. L. Wu
and S. J. Chang, "Low-frequency noise characteristics in strained-Si
nMOSFETs", IEEE Electron. Dev. Lett., Vol. 28, No. 1, pp. 36-38, January
2007. 286. S.
J. Young, L. W. Ji, T. H. Fang, S. J. Chang
and X. L. Du, "ZnO ultraviolet photodiodes with Pd contact electrodes", Acta Materialia,
Vol. 55, No. 1, pp. 329-333, January 2007. 287. S.
J. Young, L. W. Ji, S. J. Chang
and X. L. Du, "ZnO metal-semiconductor- metal ultraviolet photodiodes
with Au contacts", J. Electrochem. Soc., Vol. 154, No. 1, pp. H26-H29, January 2007. 288. L. T. Chen, C. S.
Hwang, I. G. Chen and S. J. Chang, "Chromaticity of inhomogeneous
broadening effect on CaxSr1-xAl2O4:Eu2+
phosphors", J.
Alloys and Compounds, Vol. 426, No. 1-2, pp. 395-399, December
2006. 289. C. F. Shen, S.
J. Chang, T. K. Ko, C. T. Kuo, S. C. Shei, W. S. Chen, C. T. Lee,
C. S. Chang and Y. Z. Chiou, "Nitride-based light emitting diodes with textured
sidewalls and pillar waveguides", IEEE Photon. Technol. Lett., Vol. 18, No. 23, pp. 2517-2519,
December 2006. 290. S. C. Hung, Y. K.
Su, S. J. Chang and Y. H. Chen, "Vertically aligned GaN nanotubes - Fabrication and current image
analysis", Microelectron.
Eng., Vol. 83, No. 11-12, pp.
2441-2445, November-December
2006. 291. C. L. Yu, S.
J. Chang, P. C. Chang, Y. C. Lin and C. T. Lee, "Nitride-based ultraviolet Schottky barrier
photodetectors with LT-AlN cap layers", Superlattice
Microst., Vol. 40, No.
4-6, pp. 470-475, October-December 2006. 292. C. Y. Lu, S.
J. Chang, S. P. Chang, C. T. Lee, C. F. Kuo, H. M. Chang Y. Z. Chiou, C. L. Hsu and I. C. Chen, "Ultraviolet
photodetectors with ZnO nanowires prepared on ZnO:Ga/glass templates",
Appl. Phys. Lett., Vol.
89, No. 15, Art. no. 153101, October 2006. 293. S. J. Chang, C.
L. Yu, R. W. Chuang, P. C. Chang, Y. C. Lin, Y. W. Jhan and C. H. Chen,
"Nitride-based MIS-like photodiodes with
semiinsulating Mg-doped GaN cap layers", IEEE Sensors Journal, Vol. 6, No. 5, pp. 1043-1044, October 2006. 294. S.
J. Young, L. W. Ji, R. W. Chuang, S. J. Chang and X. L.
Du, "Characterization
of ZnO metal-semiconductor-metal ultraviolet photodiodes with palladium
contact electrodes", Semicond. Sci. Technol., Vol.
21, No. 10, pp. 1507-1511, October 2006. 295. S. J. Chang, C.
L. Yu, P. C. Chang, Y. C. Lin and C. H. Chen,
"Nitride-based MIS-like diodes
with semi-insulating Mg-doped GaN cap layers", Semicond.
Sci. Technol., Vol. 21, No. 10, pp. 1422-1424, October 2006. 296.
S. C. Hung, Y. K. Su, T. H. Fang and S.
J. Chang, "Shell buckling
behavior investigation of individual gallium nitride hollow nanocolumn",
Appl. Phys. A, Vol. 84, No.
4, pp. 439-443, September 2006. 297. S. J. Chang, C.
F. Shen, S. C. Shei, R. W. Chuang, C. S. Chang, W. S. Chen, T. K. Ko and J.
K. Sheu, "Highly reliable nitride-based LEDs with internal ESD protection diodes", IEEE
Tran. Dev. Mater. Reliability, Vol. 6, No. 3, pp. 442-447,
September 2006. 298. T. K. Ko, S. C. Shei, S. J. Chang, Y. Z. Chiou,
R. M. Lin, W. S. Chen, C. F. Shen, C. S. Chang and K. W. Lin, "InGaN
p-i-n ultraviolet - A band-pass photodetectors", IEE Proc. - Optoelectron.,
Vol. 153, No. 4, pp. 212-214, August 2006. 299. T. K. Ko, S. J. Chang, J. K. Sheu, S. C. Shei, Y. Z. Chiou, M.
L. Lee, C. F. Shen, S. P. Chang and K. W. Lin, "AlGaN/GaN
Schottky-barrier UV-B bandpass photodetectors with ITO contacts and LT-GaN
cap layers", Semicond. Sci. Technol., Vol.
21, No. 8, pp. 1064-1068, August 2006. 300. T. K. Ko, S. J. Chang, Y. K. Su, Y. Z. Chiou, S. C. Shei, J. K.
Sheu, W. C. Lai, Y. C. Lin, W. S. Chen and C. F. Shen, "Nitride-based flip-chip
p-i-n photodiodes", IEEE
Tran. Adv. Packaging, Vol. 29, No. 3, pp. 483-487,
August 2006. 301. S.
J. Chang, W. S. Chen, Y. C. Lin, C. S. Chang, T. K. Ko, Y. P.
Hsu, C. F. Shen, J. M. Tsai and S. C. Shei, "Nitride-based flip-chip
LEDs with transparent ohmic contacts and reflective mirrors",
IEEE Tran. Adv. Packaging,
Vol. 29, No. 3, pp. 403-408, August 2006. 302. T. K. Ko, S. C. Shei, S. J. Chang, Y. K. Su, Y.
Z. Chiou, Y. C. Lin, C. S. Chang, W. S. Chen, C. K. Wang, J. K. Sheu and W.
C. Lai, "Flip-chip p(GaN)-i(GaN)-n(AlGaN) narrowband UV-A photosensors",
IEEE Sensors Journal,
Vol. 6, No. 4, pp. 964-969, August 2006. 303. S.
J. Chang, T. K. Lin, Y. K. Su, Y. Z. Chiou, C. K. Wang, S. P.
Chang, C. M. Chang, J. J. Tang and B. R. Huang, "ITO/homoepitaxial
ZnSe/ITO MSM sensors with thermal annealing", IEEE Sensors Journal,
Vol. 6, No. 4, pp. 945-949, August 2006. 304. S.
J. Chang, H. S. Hou and Y. K.
Su, "Automated synthesis of
passive filter circuits including parasitic effects by genetic programming",
Microelectron. Journal, Vol. 37,
No. 8, pp. 792-799, August 2006. 305. S. J. Young, L. W.
Ji, S. J. Chang
and Y. K. Su, "ZnO metal-semiconductor-metal ultraviolet
sensors with various contact electrodes", J. Crystal Growth, Vol. 293, No. 1, pp. 43-47, July 2006. 306. T. K. Lin, S. J. Chang, B. R. Huang, K. T. Lam, Y. S. Sun, M. Fujita and Y. Horikoshi, "Transparent RuOx
contacts on n-ZnO", J.
Electrochem. Soc., Vol. 153, No.
7, pp. G677-G680, July 2006. 307.
C. H. Kuo, S. J. Chang, G.
C. Chi, K. T. Lam and Y. S. Sun,
"Nitride-based
light emitting diodes with quaternary p-AlInGaN surface layers",
Phys. Status Solidi C, Vol. 3, No. 6,
pp. 2153-2155, June 2006. 308. C. M. Tsai, J. K.
Sheu, P. T. Wang, S. C. Shei, S. J. Chang, C. H. Kuo, C.
W. Kuo and Y. K. Su, "High efficiency and improved ESD characteristics
of GaN-based LEDs with naturally textured surface grown by MOCVD",
IEEE Photon. Technol. Lett., Vol.
18, No. 11, pp. 1213-1215, June 2006. 309.
T. J. Hsueh, S. J. Chang, Y.
R. Lin, S. Y. Tsai, I. C. Chen and C. L. Hsu, "A
novel method for the formation of ladder-like ZnO nanowires", Crystal
Growth & Design, Vol.
6, No. 6, pp. 1282-1284, June
2006. 310.
L. T. Chen, I. L. Sun, C. S. Hwang and S.
J. Chang, "Luminescence
properties of BAM phosphor synthesized by TEA coprecipitation method",
J. Luminescence, Vol. 118, No.
2, pp. 293-300, June 2006. 311. S. L. Wu, C. H. Lee,
S. J. Chang and Y. M. Lin, "Inductively coupled plasma etching of Si1–xGex
in CF4/Ar and Cl2/Ar discharges", J.
Vac. Sci. Technol. A, Vol. 24, No. 3, pp. 728-731, May/June 2006. 312. Y. K. Su, S. H. Hsu, R. W. Chuang, S. J. Chang
and W. C. Chen,
"GaInNAs metal-semiconductor-metal near-infrared photodetectors", IEE Proc. - Optoelectron., Vol. 153, No. 3, pp. 128-130, June 2006. 313. S. J. Chang, C.
L. Yu, C. H. Chen, P. C. Chang, and K. C. Huang, "Nitride-based ultraviolet metal-semiconductor-metal photodetectors with
low-temperature GaN cap layers and Ir/Pt contact electrodes", J.
Vac. Sci. Technol. A, Vol. 24, No. 3, pp. 637-640, May/June 2006. 314.
T. K. Lin, S. J. Chang, Y. Z. Chiou,
C. K. Wang, S. P. Chang, K. T. Lam, Y. S. Sun and B. R. Huang,
"Homoepitaxial ZnSe MIS photodetectors with SiO2 and BST
insulator layers", Solid State
Electron., Vol. 50, No. 5, pp. 750-753, May 2006. 315.
K. T. Liu, Y. K. Su, R. W. Chuang, S.
J. Chang and Y. Horikoshi,
"Electrical and surface composition properties of phosphorus
implantation in Mg-doped GaN", Microelectron. Journal, Vol. 37, No.
5, pp. 417-420, May 2006. 316.
Y. M. Lin, S. L. Wu, S. J. Chang,
P. S. Chen and C. W. Liu, "Hole confinement and 1/f noise
characteristics of SiGe double-quantum-well p-type metal-oxide-semiconductor
field-effect transistors ",
Jpn. J. Appl. Phys., Vol. 45, No. 5A,
pp. 4006-4008, May 2006. 317.
C. W. Huang, S. J. Chang, W.
Wu, C. L. Wu and C. S. Chang, "A
Ku band four-stage PHEMT 1W MMIC power amplifier", Microelectron. Journal, Vol. 37, No.
5, pp. 428-432, May 2006. 318.
Y. K. Su, W. C. Chen, S. H. Hsu, J. D. Wu, S.
J. Chang,
R. W. Chuang and W. R. Chen, "Improvement
in linearity of novel InGaAsN-based high electron mobility transistors",
Jpn. J. Appl. Phys., Vol. 45, No.
4B, pp. 3372-3375, April 2006. 319.
Y. Z. Chiou, Y. K. Su, J. Gong, S. J. Chang
and C. K. Wang, "Noise
analysis of nitride-based metal oxide-semiconductor heterostructure field
effect transistors with photo-chemical vapor deposition SiO2 gate
oxide in the linear and saturation regions", Jpn. J. Appl. Phys., Vol. 45, No. 4B, pp. 3405-3409, April 2006. 320. S. H. Hsu, W. R. Chen, Y. K. Su, R. W. Chuang, S. J. Chang
and W. C. Chen,
"Effects of nitrogen incorporation on the electronic properties of GaxIn1-xNyAs1-y
epilayers probed by persistent photoconductivity", J. Crystal Growth, Vol. 290, No.
1, pp. 87-90, April 2006. 321. S. J. Chang, T.
K. Ko, Y. K. Su, Y. Z. Chiou, C. S. Chang, S. C. Shei, J. K. Sheu, W. C. Lai,
Y. C. Lin, W. S. Chen and C. F. Shen, "GaN-based p-i-n sensors with ITO contacts",
IEEE Sensors Journal, Vol. 6, No. 2,
pp. 406-411, April 2006. 322. C. L. Hsu, Y. R.
Lin, S. J. Chang, T, H. Lu, T. S. Lin, S. Y. Tsai and I. C. Chen, "Influence of the formation of the second
phase in ZnO/Ga nanowire systems", J. Electrochem. Soc., Vol. 153, No. 4, pp. G333-G336, April 2005. 323.
Y. D. Jhou, C. H. Chen, S. J. Chang, Y. K. Su, P.
C. Chang, P. C. Chen, H. Hung, C. L. Yu, S. M. Wang and M. H. Wu, "High
UV/visible rejection contrast AlGaN/GaN MIS photodetectors",
Microelectron. Journal, Vol. 37, No.
4, pp. 328-331, April 2006. 324.
P. C. Chang, C. H. Chen, S. J. Chang, Y. K. Su, C.
L. Yu, B. R. Huang and P. C. Chen, "High UV/visible rejection contrast
AlGaN/GaN MIS photodetectors", Thin
Solid Films, Vol. 498, No. 1-2,
pp. 133-136, March 2006. 325.
P. C. Chen, C. H. Chen, S. J. Chang, Y. K. Su, P.
C. Chang and B. R. Huang, "High hole concentration of p-type InGaN
epitaxial layers grown by MOCVD", Thin
Solid Films, Vol. 498, No. 1-2,
pp. 113-117, March 2006. 326. Y. K. Su, S. H. Hsu,
C. C. Sio, W. C. Chen and S. J.
Chang, "DC and
1/f noise characteristics of InGaP/InGaAsN/GaAs double heterojunction bipolar
transistors", Semicond.
Sci. Technol., Vol. 21, No. 2, pp. 167-170, February 2006. 327.
J. D. Hwang, G. H. Yang, C. C. Lin and S. J. Chang, "Nonalloyed Ti/indium tin oxide and
Ti ohmic contacts to n-type GaN using plasma pre-treatment", Solid State Electron., Vol. 50, No. 2, pp. 297-299, February 2006. 328.
K. S. Ramaiah, Y. K. Su, S. J. Chang and C. H. Chen, "A comparative study of blue,
green and yellow light emitting diode structures grown by metal organic
chemical vapor deposition", Solid
State Electron., Vol. 50, No. 2,
pp. 119-124, February 2006. 329. S. H. Hsu, Y. K. Su,
S.
J. Chang, W. C. Chen and H. L. Tsai, "InGaAsN metal-semiconductor-metal photodetectors
with modulation-doped heterostructures",
IEEE Photon. Technol. Lett.,
Vol. 18, No. 3, pp. 547-579, February 2006. 330. S.
J. Chang, H. S. Hou and Y. K.
Su, "Automated
passive filter synthesis using a novel tree representation and genetic
programming", IEEE
Tran. Evolutionary Computation, Vol. 10, No. 1, pp. 93-100, February
2006. 331.
Y. K. Su, H. S. Hou and S.
J. Chang, "Practical
impedance matching using genetic programming", Microwave
Optical Technol. Lett., Vol. 48, No. 2, pp. 375-377,
February 2006. 332.
C. H. Liu,
T. K. Lin, S. J. Chang,
Y. K. Su, Y. Z. Chiou, C. K. Wang, S. P. Chang, J. J. Tang and B. R. Huang,
"Photo-assisted thermally oxidized GaAs insulator layers deposited by
photo-CVD", Surface & Coatings
Technol., Vol. 200, No. 10, pp. 3250-3253, February 2006. 333.
M. C. Wei, S. J. Chang, C. Y. Tsai, C. H. Liu and S. C. Chen,
"SiNx deposited by in-line PECVD for multi-crystalline
silicon solar cells", Solar Energy, Vol. 80, No. 2,
pp. 215-219, February 2006. 334. S. J. Chang, T. K.
Lin, Y. K. Su, Y. Z. Chiou, C. K. Wang, S. P. Chang, C. M. Chang, J. J. Tang
and B. R. Huang, "Homoepitaxial ZnSe MSM photodetectors with various
transparent electrodes", Mater. Sci. Eng. B, Vol. 127, No.
2-3, pp. 164-168, February 2006. 335.
C. K. Wang, S. J. Chang, Y. K. Su, Y. Z. Chiou, T. K. Lin, C. C.
Wong, H. L. Liu, S. P. Chang and J. J. Tang, "Room temperature photo-CVD
SiO2 layers on AlGaN and AlGaN/GaN MOS-HFTEs", Phys.
Status Solidi A, Vol. 203, No.
2, pp. 404-409, February 2006. 336. C. L. Hsu, S.
J. Chang, Y. R. Lin, J. M. Wu, T. S. Lin, S. Y. Tsai and I. C.
Chen, "Indium-diffused ZnO
nanowires synthesized on ITO-buffered Si substrate", Nanotechnol., Vol. 17, No.
2, pp. 516-519, January 2006. 337. S. H. Yang, T. J.
Hsueh and S. J. Chang, "Effect
of ZnO buffer layer on the cathodoluminescence of ZnGa2O4/ZnO
phosphor screen for FED", J.
Crystal Growth, Vol. 287, No. 1, pp. 194-198, January 2006. 338. S. L. Wu, Y. P. Wang
and S. J. Chang,
"Controlled misfit dislocation technology in strained silicon MOSFETs",
Semicond. Sci. Technol., Vol. 21, No. 1, pp. 44-47, January 2006. 339. W. S. Chen, S. C.
Shei, S. J. Chang, Y. K. Su, W. C. Lai, C. H. Kuo, Y. C.
Lin, C. S. Chang, T. K. Ko, Y. P. Hsu and C. F. Shen, "Rapid thermal annealed InGaN/GaN flip-chip LEDs",
IEEE Tran. Electron. Dev.,
Vol. 53, No. 1, pp. 32-37, January 2006. 340. C. K. Wang, S.
J. Chang, Y. K. Su, Y. Z. Chiou, S. C. Chen, C. S. Chang, T. K.
Lin, H. L. Liu and J. J. Tang, "GaN MSM UV photodetectors with titanium tungsten
transparent electrodes", IEEE Tran. Electron. Dev., Vol. 53,
No. 1, pp. 38-42, January 2006. 341. S. L. Wu, Y. M. Lin,
S.
J. Chang, S. C. Lu, P. S. Chen and C. W. Liu, "Enhanced CMOS performances using substrate
strained-SiGe and mechanical strained-Si technology",
IEEE Electron. Dev. Lett.,
Vol. 27, No. 1, pp. 46-48, January 2006. 342. H. C. Yu, J. S.
Wang, Y. K. Su, S. J. Chang, F. I. Lai, Y. H. Chang, H. C. Kuo, C. P.
Sung, H. P. D. Yang, K. F. Lin, J. M. Wang, J. Y. Chi, R. S. Hsiao and S.
Mikhrin, "1.3-mm InAs-InGaAs quantum-dot vertical-cavity
surface-emitting laser with fully doped DBRs grown by MBE",
IEEE Photon. Technol. Lett.,
Vol. 18, No. 2, pp. 418-420, January 2006. 343. S. C. Hung, Y. K.
Su, S. J. Chang, L. W. Ji, D. S. Shen and C. H. Huang, "InGaN/GaN MQD p-n junction
photodiodes", Physica E,
Vol. 30, No. 1-2, pp. 13-16, December 2005. 344. H. S. Hou, S. J. Chang
and Y. K. Su, "Tolerance design of
passive filter circuits using genetic programming", IEICE Tran. Electron., Vol. E88C, No.
12, pp. 2388-2390, December 2005. 345. C. H. Kuo, S. J. Chang and S. C. Chen, "Nitride-based LEDs
with ITO on nanostructured silicon contact layers", J. Crystal Growth, Vol.
258, No. 3, pp. 295-299, December 2005. 346. J. C. Lin, Y. K. Su,
S.
J. Chang, W. R. Chen, R. Y. Chen, Y. C. Cheng and W. J. Lin, "Activation energy of n-GaN
epitaxial layers grown on vicinal-cut sapphire substrates", J. Crystal Growth, Vol.
258, No. 4, pp. 481-485, December 2005. 347. Y. K. Su, S.
J. Chang, S. C. Wei, R. W. Chuang, S. M. Chen and W. L. Li, "Nitride-based LEDs with n--GaN
current spreading Layers", IEEE Electron. Dev. Lett., Vol. 26, No. 12, pp. 891-893,
December 2005. 348. C. L. Hsu, S.
J. Chang, H. C. Hung, Y. R. Lin, C. J. Huang, Y. K. Tseng and I.
C. Chen, "Vertical single-crystal
ZnO nanowires grown on ZnO:Ga/glass templates", IEEE Tran. Nanotechnol., Vol.
4, No. 6, pp. 649-654, December 2005. 349. Y. P. Wang, S. L. Wu
and S. J. Chang,
"Investigation of transport mechanism for strained Si n
metal-oxide-semiconductor field-effect transistor grown on multi-layer
substrate", Jpn. J. Appl. Phys. Lett., Vol. 44, No. 51, pp. L1560-L1562,
December 2005. 350. C. L. Hsu, S.
J. Chang, H. C. Hung, Y. R. Lin, T. H. Lu, Y. K. Tseng and I. C.
Chen, "Selective growth of
vertical ZnO nanowires on ZnO:Ga/Si3N4/SiO2/Si
templates", J.
Vac. Sci. Technol. B, Vol. 23, No. 6, pp. 2292-2296, November-December
2005. 351. L. W. Ji, T. H.
Fang, S. C. Hung, Y. K. Su, S. J. Chang and R. W.
Chuang, "Ultra small self-organized nitride nanotips", J. Vaccum Sci. Technol. B, Vol. 23, No. 6, pp. 2496-2498,
November-December 2005. 352. C. L. Hsu, S. J. Chang, Y. R. Lin, P. C. Li, T. S. Lin, S. Y. Tsai, T. H. Lu and I. C. Chen, "Ultraviolet
photodetectors with low temperature synthesized vertical ZnO nanowires",
Chem. Phys. Lett.,
Vol. 416, No. 1-3, pp. 75-78, November 2005. 353. S. H. Yang, T. J.
Hsueh and S. J. Chang, "Cathodoluminescence
of a white ZnGa2O4/ZnO phosphor screen", J. Electrochem. Soc., Vol. 152, No.
11, pp. H191-H195, November 2005. 354. K. T. Liu, Y. K. Su, S. J. Chang
and Y. Horikoshi, "Magnesium/nitrogen and beryllium/nitrogen co-implantation into
GaN", J. Appl. Phys.,
Vol. 98, No. 7, Art. no. 073702, October 2005. 355. C. K. Wang, T. K. Ko, C. S. Chang, S.
J. Chang, Y. K. Su, T. C.
Wen, C.
H. Kuo and Y. Z.
Chiou, "The thickness effect of p-AlGaN
blocking layer in UV-A bandpass photodetectors", IEEE Photon. Technol. Lett., Vol.
17, No. 10, pp. 2161-2163, October 2005. 356. S. C. Hung, Y. K. Su, T. H. Fang, S. J.
Chang and L. W. Ji, "Buckling instabilities in GaN
nanotubes under uniaxial compression",
Nanotechnol., Vol.
16, No. 10, pp. 2203-2208, October 2005. 357. C. H. Kuo, C. C.
Lin, S. J. Chang, Y. P. Hsu, J. M. Tsai, W. C. Lai and P.
T. Wang, "Nitride-based
light-emitting diodes with p-AlInGaN surface layers",
IEEE Tran. Electron. Dev.,
Vol. 52, No. 10, pp. 2346-2349, October 2005. 358. J. L. Yang, J. S. Chen and S.
J. Chang,
"Presence of nanosize Au dots on
the formation of ohmic contact for the Ni-Au base film to p-GaN", J. Vac. Sci. Technol. B, Vol. 23, No.
5, pp. 2127-2131, September-October 2005. 359. Y. P. Wang, S. L. Wu
and S. J. Chang,
"Optimized Si-cap
layer thickness for tensile-strained-Si/compressively strained SiGe
dual-channel transistors in 0.13 mm complementary metal oxide semiconductor technology",
Jpn. J. Appl. Phys. Lett.,
Vol. 44, No. 37-41, pp. L1248-L1251, September 2005. 360. Y. T. Nien, Y. L.
Chen, I. G. Chen, C. S. Hwang, Y. K. Su, S. J. Chang and F. S.
Juang, "Synthesis of nano-scaled
yttrium aluminum garnet phosphor by co-precipitation method with HMDS
treatment", Mater. Chem. Phys., Vol. 93, No. 1, pp.
79-83, September 2005. 361. T. K. Ko, S. J. Chang, Y. K. Su, M. L. Lee, C. S. Chang, Y. C.
Lin, S. C. Shei, J. K. Sheu, W. S. Chen and C. F. Shen, "AlGaN-GaN
Schottky-barrier photodetectors with LT GaN cap layers", J. Crystal Growth, Vol. 283, No.
1-2, pp. 68-71, September 2005. 362. S.
J. Chang,
S. C. Wei, Y. K. Su, R. W. Chuang, S. M. Chen and Li, "Nitride-based LEDs with MQW active regions grown by different
temperature profiles", IEEE Photon. Technol. Lett., Vol. 17, No. 9, pp. 1806-1808,
September 2005. 363. Y. P. Hsu, S.
J. Chang, Y. K. Su, S. C. Chen, J. M. Tsai, W. C. Lai, C. H. Kuo
and C. S. Chang, "InGaN-GaN MQW LEDs with
Si treatment", IEEE Photon. Technol. Lett., Vol. 17, No. 8, pp. 1620-1622,
August 2005. 364. T. K. Lin, S.
J. Chang, Y. K. Su, B. R. Huang, M. Fujita and Y. Horikoshi, "ZnO MSM photodetectors with Ru
contact electrodes", J. Crystal Growth, Vol. 281, No. 2-4, pp.
513-517, August 2005. 365. C. I. Lee, Y. T. Lu, Y. K. Su, S. J. Chang,
J. S. Hwang and C. C. Chang, "Optical transitions in a self-assembled Ge quantum dot/Si-superlattice
measured by photoreflectance spectroscopy", Jpn. J. Appl.
Phys.,
Vol. 44, No. 33-36, pp. L1045-L-1047, August 2005. 366. Y. D. Jhou, C. H.
Chen, R. W. Chuang, S. J. Chang, Y. K. Su, P.
C. Chang, P. C. Chen, H. Hung, S. M. Wang and C. L. Yu, "Nitride-based light emitting diode
and photodetector dual function devices with InGaN/GaN multiple quantum well
structures", Solid State Electron., Vol. 49, No. 8, pp. 1347-1351,
August 2005. 367. K. T. Liu, Y. K. Su,
R. W. Chuang, S. J. Chang and Y. Horikoshi, "C and N co-implantation in Be-doped GaN", Semicond. Sci.
Technol., Vol. 20, No. 8, pp. 740-744, August 2005. 368. C. L. Hsu, Y. R.
Lin, S. J. Chang, T. S. Lin, S. Y. Tsai and I. C. Chen, "Vertical ZnO/ZnGa2O4
core-shell nanorods grown on ZnO/glass templates by reactive
evaporation", Chem. Phys. Lett., Vol. 411, No. 1-3,
pp. 221-224, August 2005. 369. C. H. Liu, T. K. Lin
and S. J. Chang, "GaAs
MOS capacitors with photo-CVD SiO2 insulator layers", Solid State Electron., Vol. 49, No. 7,
pp. 1077-1080, July 2005. 370. C. L. Hsu, S.
J. Chang, Y. R. Lin, S. Y. Tsai and I. C. Chen, "Vertically well aligned P-doped ZnO
nanowires synthesized on ZnO-Ga/glass templates", Chem.
Commun., Issue 28, pp. 3571-3573, July 2005. 371. S. J. Chang, H. C. Yu, Y. K. Su, I. L. Chen, T. D. Lee, C. M. Lu, C. H. Chiou, Z. H. Lee, H. P. Yang and C. P. Sung, "Highly strained InGaAs oxide confined VCSELs emitting in 1.25 µm",
Mater. Sci. Eng. B, Vol. 121, No.
1-2, pp. 60-63, July 2005. 372. S. C. Hung, Y. K.
Su, S. J. Chang, S. C. Chen, T. H. Fang
and L. W. Ji, "GaN nanocolumns formed by inductively coupled plasmas
etching", Physica E, Vol. 28, No. 2, pp. 115-120, July 2005. 373. C. M. Tsai, J. K.
Sheu, W. C. Lai, Y. P. Hsu, P. T. Wang, C. T. Kuo, C. W. Kuo, S.
J. Chang and Y. K. Su, "Enhanced output power in
GaN-based LEDs with naturally textured surface grown by MOCVD",
IEEE. Electron. Dev. Lett., Vol.
26, No. 7, pp. 464-466, July 2005. 374. Y. K. Su, S.
J. Chang, S. C. Wei, S. M. Chen and W. L. Li, "ESD engineering of
nitride-based LEDs", IEEE
Tran. Dev. Mater. Reliability, Vol. 5, No. 2, pp. 277-281, June
2005. 375. S. J. Chang, C. K. Wang,
Y. K. Su,
C. S. Chang,
T. K. Lin,
T. K. Ko
and H. L. Liu,
"GaN
MIS capacitors with photo-CVD SiNxOy insulating layers",
J. Electrochem. Soc., Vol. 152, No.
6, pp. G423-G426, June 2005. 376. H. S. Hou, S. J. Chang
and Y. K. Su, "Practical passive
filter synthesis using genetic programming", IEICE Tran. Electron., Vol. E88C, No. 6, pp. 1180-1185, June
2005. 377. S. C. Wei, Y. K. Su,
S.
J. Chang, S. M. Chen and W. L. Li, "Nitride-based MQW LEDs with multiple GaN-SiN nucleation layers", IEEE Tran. Electron. Dev., Vol. 52, No. 6, pp. 1104-1109, June 2005. 378. C. K. Wang, S. J.
Chang, Y. K. Su, Y. Z. Chiou, C. S. Chang, T. K. Lin, H. L. Liu and J. J. Tang, "High detectivity GaN
metal-semiconductor-metal UV photodetectors with transparent tungsten
electrodes", Semicond.
Sci. Technol., Vol. 20, No. 6, pp.
485-489, June 2005. 379. C. K. Wang, R. W. Chuang, S. J. Chang, Y. K. Su, S. C. Wei, T. K. Lin, T. K. Ko, Y. Z. Chiou and J. J. Tang, "High
temperature and high frequency characteristics of AlGaN/GaN MOS-HFETs with
photochemical vapor deposition SiO2 layer", Mater.
Sci. Eng. B, Vol. 119, No. 2, pp. 25-28, May 2005. 380.
S. J. Chang, C. S. Chang, Y. K. Su, C. T. Lee, W. S.
Chen, C. F. Shen, Y. P. Hsu, S. C. Shei and H. M. Lo, "Nitride-based flip-chip ITO
LEDs", IEEE Tran. Adv. Packaging, Vol. 28, No. 2, pp. 273-277,
May 2005. 381.
C. W. Huang, S. J. Chang, W.
Wu, C. L. Wu and C. S. Chang, "Ka
band 1W PHEMT MMIC power amplifiers on 2mil-thick GaAs substrates", Microwave
Optical Technol. Lett. , Vol. 45, No. 3, pp. 181-185,
May 2005. 382. S. C. Hung, Y. K. Su, S. J. Chang, S. C.
Chen, L. W. Ji, T. H. Fang, L. W. Tu and M. Chen, "Self-formation of GaN hollow nanocolumns by
inductively coupled plasma etching", Appl. Phys. A, Vol. 80, No. 8, pp. 1607-1610, May 2005. 383. T. K. Lin, S.
J. Chang, Y. K. Su, Y. Z. Chiou, C. K. Wang, S. P. Chang, C. M.
Chang, J. J. Tang and B. R. Huang, "ZnSe
MSM photodetectors prepared on GaAs and ZnSe substrates", Mater.
Sci. Eng. B, Vol. 119, No. 2, pp. 202-205, May 2005. 384. C. L. Hsu, S.
J. Chang, H. C. Hung, Y. R. Lin, C. J. Huang, Y. K. Tseng and I.
C. Chen, "Well-aligned, vertically
Al-doped ZnO nanowires synthesized on ZnO:Ga/glass templates",
J. Electrochem. Soc., Vol. 152, No. 5, pp. G378-G381, May 2005. 385. J. D. Hwang, Z. Y. Lai, C. Y. Wu and S.
J. Chang,
"Enhancing P-type conductivity
in Mg-doped GaN using oxygen and nitrogen plasma activation", Jpn. J. Appl. Phys., Vol. 44, No. 4A, pp. 1726-1729, April
2005. 386. M. L. Tu, Y. K. Su, S.
J. Chang, T. H. Fang, W. H. Chen and H. Yang, "Improved performance of 2,3-dibutoxy-1,4-phenylene vinylene based polymer
light-emitting diodes by thermal annealing", Jpn.
J. Appl. Phys., Vol. 44, No.
4B, pp. 2787-2789, April 2005. 387. C. S. Chang, S. J. Chang, Y.
K. Su, W. S. Chen, C. F. Shen, S. C. Shei and H. M. Lo,
"Nitride-based power chip with
indium-tin-oxide p-contact and Al back-side reflector", Jpn.
J. Appl. Phys., Vol. 44,
No. 4B, pp. 2462-2464, April 2005. 388. C. K. Wang, S. J. Chang, Y.
K. Su, Y. Z. Chiou, C. H. Kuo, C. S. Chang, T. K. Lin, T. K. Ko and J. J.
Tang, "Noise
characteristics of AlGaN/GaN/AlGaN double heterostructure
metal-oxide-semiconductor heterostructure field effect transistors with
photochemical vapor deposition SiO2 layer", Jpn. J.
Appl. Phys., Vol. 44, No. 4B, pp. 2458-2461, April 2005. 389. S. H. Hsu, Y. K. Su,
R. W. Chuang, S. J. Chang, W. C. Chen and W. R. Chen, "Study of electronic properties by persistent photoconductivity
measurement in GaxIn1-xNyAs1-y
grown by MOCVD", Jpn. J. Appl. Phys., Vol. 44, No. 4B, pp. 2454-2457, April
2005. 390.
C. L. Yu, C. H. Chen, S.
J. Chang, Y. K.
Su, S. C. Chen, P. C. Chang, P. C. Chen, M. H. Wu, H. C. Chen and K. C. Su,
"In0.37Ga0.63N
metal-semiconductor-metal photodetectors with recessed electrodes",
IEEE Photon. Technol. Lett., Vol.
17, No. 4, pp. 875-877, April 2005. 391. W. S. Chen, S.
J. Chang, Y. K. Su, C. T. Lee, R. L. Wang, C. H. Kuo and S. C.
Chen, "AlxGa1-xN/GaN
HEMTs with various Al mole fractions in AlGaN barrier", J. Crystal Growth, Vol. 275, No. 3-4, pp. 398-403, March 2005. 392. Y. R. Lin,
Y. K. Tseng, S. S. Yang, S. T. Wu, C. L. Hsu and S.
J. Chang, "Buffer-facilitated
epitaxial growth of ZnO nanowire", Crystal Growth & Design, Vol. 5, No. 2, pp. 579-583, March 2005. 393. Y. P. Hsu, S.
J. Chang, Y. K. Su, J. K. Sheu, C. H. Kuo, C. S. Chang and S. C. Shei, "ICP etching of
sapphire substrates", Optical
Mater., Vol. 27, No. 6, pp. 1171-1174, March 2005. 394. S. M. Wang, C. H.
Chen, S. J. Chang, Y. K. Su and B. R. Huang, "Mg-doped GaN activated with Ni
catalysts", Mater. Sci. Eng. B, Vol. 117, No. 2, pp.
107-111, March 2005. 395. Y. K. Su, P. C.
Chang, C. H. Chen, S. J. Chang, C. L. Yu, C.
T. Lee, H. Y. Lee, J. Gong, P. C. Chen and C. H. Wang, "Nitride-based MSM UV
photodetectors with photo-CVD annealed Schottky contacts", Solid
State Electron., Vol. 49,
No. 3, pp. 459-463, March 2005. 396.
C. W. Huang, S. J. Chang, W.
Wu, C. L. Wu and C. S. Chang, "A
Ku-band four-stage temperature compensated PHEMT MMIC power amplifier", Microwave
Optical Technol. Lett., Vol.
44, No. 5, pp. 480-485, March 2005. 397.
J. L. Yang, J.
S. Chen and S. J. Chang, "Effect of Au distribution in NiO/Au
film on the ohmic contact formation to p-type GaN", J. Materials Research, Vol. 20, No. 2, pp.456-463, February, 2005. 398. Y. M. Lin, S. L. Wu,
S.
J. Chang, P. S.
Chen and C. W. Liu, "SiGe/Si PMOSFET using graded channel
technique", Mater. Sci.
Semicond. Processing, Vol. 8, No. 1-3, pp. 367-370, February-June 2005.. 399. P. W. Chien, S. L.
Wu, S. J. Chang, S. Koh and Y. Shiraki, "High-performance SiGe
heterostructure FET grown on silicon-on-insulator ", Mater. Sci. Semicond. Processing, Vol. 8, No. 1-3, pp. 367-370,
February-June 2005.. 400. C. H. Lee, S. L.
Wu and S. J. Chang,
"SiGe heterostructure
field-effect transistor with ICP mesa treatments", Mater. Sci. Semicond. Processing, Vol.
8, No. 1-3, pp. 371-375, February-June 2005. 401.
T. K. Lin,
S.
J. Chang, Y. K. Su, Y. Z. Chiou, C. K. Wang, C. M. Chang and B. R.
Huang, "ZnSe homoepitaxial MSM
photodetectors with transparent ITO contact electrodes",
IEEE Tran. Electron. Dev., Vol.
52, No. 1, pp. 121-123, January 2005. 402. J. D. Hwang, G.
H. Yang, W. T. Chang, C. C. Lin, R. W. Chuang and S. J. Chang, "A novel transparent ohmic contact of
indium tin oxide to n-type GaN", Microelectron. Eng., Vol.
77, No. 1, pp. 71-75, January 2005. 403. T. M. Kuan, S.
J. Chang, Y. K. Su, J. C. Lin, C. W. H. Lan, J. A. Bardwell, H. Tang, W. J. Lin
and Y. T. Cherng, "High performance GaN/InGaN HFETs on Mg-doped GaN carrier blocking layers", J.
Cryst. Growth, Vol. 272, No. 1-4, pp. 300-304, December
2004. 404. S. H. Hsu, Y. K.
Su, S. J. Chang, K. I. Lin, W. H. Lan, P. S. Wu and C. H.
Wu, "Temperature dependence of
the optical properties on GaInNP", J.
Cryst. Growth, Vol. 272,
No. 1-4, pp. 765-771, December 2004. 405. P. C. Chang, C. H.
Chen, S. J. Chang, Y. K. Su, C. L. Yu, P. C. Chen and C. H.
Wang, "AlGaN/GaN MSM
photodetectors with photo-CVD annealed Ni/Au semi-transparent contacts", Semicond.
Sci. Technol., Vol. 19, No. 12, pp. 1354-1357, December
2004. 406. C. L. Hsu, S. S.
Yang, Y. K. Tseng, I. C. Chen, Y. R. Lin, S. J. Chang and
S. T. Wu, "A new and simple means for self-assembled nanostructure:
facilitated by buffer layer", J. Phys. Chem. B, Vol. 108, No. 49, pp.
18799-18803, December 2004. 407. X. H. Wang, X.
W. Fan, C. X. Shan, Z. Z. Zhang, J. Y. Zhang, Y. M. Lu, Y. C. Liu, D. Z.
Shen, Y. K. Su and S. J. Chang, "MOVPE
growth of ZnSe films on ZnO/Si templates", Mater. Chem. Phys., Vol. 88, No. 1, pp. 102-105, November 2004. 408. L. W. Ji, Y. K. Su, S.
J. Chang, S. C. Hung, C. S. Chang, and L. W. Wu, "Nitride-based light-emitting
diodes with InGaN/GaN SAQD active layers", IEE Proc. -
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2004. 409. K. T. Liu, Y. K. Su,
S.
J. Chang, K. Onomitsu and Y. Horikoshi, "Donor isoelectronic trap pair luminescence from Mg and P
co-implanted GaN grown by MOCVD",
Phys. Stat. Sol. B, Vol. 241, No. 12, pp. 2003-2007, October 2004. 410. T. C. Wen, S.
J. Chang, C. T. Lee, W. C. Lai and J. K. Sheu, "Nitride-based LEDs with modulation
doped Al0.12Ga0.88N/GaN superlattice structures", IEEE
Tran. Electron. Dev., Vol. 51, No. 10, pp. 1743-1746, October
2004. 411. C. H. Lin, Y. K. Su,
Y. Z. Juang, R. W. Chung, S. J. Chang, J. F. Chen and
C. H. Tu, "The effect of
geometry on the noise characterization of SiGe HBTs and optimized device
sizes for the design of low noise amplifiers", IEEE Tran. Microwave Theory
Technol., Vol. 52, No. 9,
pp. 2153-2162, September 2004. 412. C. W. Huang, S.
J. Chang, W. Wu, C. L. Wu and C. S. Chang, "A Ka-band PHEMT diode double
balanced star mixer MMIC", Microwave
Optical Technol. Lett., Vol.
42, No. 6, pp. 455-458, September 2004. 413. C. H. Liu, R. W.
Chuang, S. J. Chang, Y. K. Su, L. W. Wu and C. C. Lin, "Improved
light output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough
surface", Mater. Sci. Eng. B,
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September 2004. 414. C. K. Wang, S.
J. Chang, Y. K. Su, C. S. Chang, Y. Z. Chiou, C. H. Kuo, T. K.
Lin, T. K. Ko, and J. J. Tang, "GaN MSM photodetectors with TiW
transparent electrodes", Mater. Sci. Eng. B, Vol. 112, No. 1, pp.
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Chuang, S. J. Chang, Y. K. Su, C. H. Kuo, J. M. Tsai and C. C.
Lin, "InGaN/GaN MQW blue LEDs with GaN/SiN double buffer layers", Mater. Sci. Eng. B, Vol. 111, No. 2-3, pp. 214-217, August 2004. 417. C. H. Lee,
S. L. Wu and S. J. Chang, "Improved performance of SiGe doped-channel field-effect transistors
using inductively coupled plasma etching", Semicond. Sci. Technol., Vol.
19, No. 8, pp. 1053-1056, August 2004. 418. C. W. Huang, S.
J. Chang, W. Wu, C. L. Wu and C. S. Chang, "A three-stage Ka band PHEMT
wideband amplifier MMIC", Microwave and Optical Technol. Lett., Vol. 42, No. 4, pp. 277-280, August 2004. 419. C. H. Wang, S.
J. Chang and P. C. Chang, "Effect
of sintering conditions on characteristics of PbTiO3-PbZrO3-Pb(Mg1/3Nb2/3)O3-Pb(Zn1/3Nb2/3)O3",
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J. S. Wang, A. R. Kovsh, Y. T. Wu, K. F. Lin and C. Y. Huang,
"1.3�慆 InAs quantum dot resonant-cavity light emitting
diodes", Mater. Sci. Eng. B, Vol. 110, No. 3, pp. 256-259, July 2004. 421. Y. K. Su, S. J. Chang, T. M. Kuan, C. H. Ko, J. B. Webb, W.
H. Lan, Y. T. Cherng and S. C. Chen, "Nitride-based
Schottky diodes and HFETs fabricated by photo-enhanced chemical wet
etching", Mater. Sci. Eng. B,
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July 2004. 422. Y. K. Su, S. J. Chang, T. M. Kuan, C. H. Ko, J. B. Webb, W.
H. Lan, Y. T. Cherng and S. C. Chen, "Nitride-based
HFETs with carrier confinement layers", Mater. Sci. Eng. B, Vol. 110, No. 2, pp. 172-176, July 2004. 423. K. T. Liu, T.
Tezuka, S. Sugita, Y. Watari, Y. Horikoshi, Y. K. Su and S. J. Chang, "Improved crystal quality for MBE
grown GaN layers", Mater. Chem. Phys., Vol. 86, No. 1, pp. 161-164, July 2004. 424. C. H. Wu, Y. K. Su, S.
J. Chang, Y. S. Huang and Y. P. Hsu, "Device characteristics of the GaAs-based heterojunction bipolar
transistors using InGaAs/GaAsP strain compensated layers as base
material", Semicond. Sci. Technol , Vol. 19, No. 7, pp. 828-832, July 2004. 425. K. S. Ramaiah, Y. K.
Su, S. J. Chang, C. H. Chen, F. S. Juang, H. P. Liu and I.
G. Chen, "Studies of InGaN/GaN
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vapor deposition", Appl. Phys.
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Chien, S. J. Chang, S. Koh and Y. Shiraki, "Influences of delta-doping position on the
characteristics of SiGe-Si DCFETs", IEEE Electron. Dev. Lett., Vol.
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J. Chang, L. W. Wu, Y. K. Su, Y. P. Hsu, W. C. Lai, J. M. Tsai,
J. K. Sheu and C. T. Lee, "Nitride-based LEDs with 800oC-grown
p-AlInGaN/GaN double cap layers", IEEE Photon. Technol. Lett., Vol. 16, No. 6, pp. 1447-1449, June 2004. 428. C. H. Liu, C. K.
Wang, S. J. Chang and Y. K. Su, "High
transconductance nitride-based MOSHFETs", Mater. Sci. Eng. B, Vol. 110, No. 1, pp.
32-33, June 2004. 429. L. W. Ji, Y. K. Su, S. J. Chang, S. T. Tsai, S.
C. Hung, R. W. Chuang, T. H. Fang and T. Y. Tsai, "Growth of InGaN
self-assembled quantum dots and their application to photodetectors", J. Vac. Sci. Technol. A, Vol. 22, No. 3, pp. 792-795, May/June 2004. 430. C. H. Chen, S. J. Chang and Y. K. Su, "InGaN/AlGaN
near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN
tunneling contact layer", J. Vac.
Sci. Technol. A,
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Su, S. J. Chang, B. Kerr, H. P. Liu and I. G. Chen, "Characterization of InGaN/GaN
multi-quantum-well blue-light-emitting diodes grown by metal organic chemical
vapor deposition", Appl. Phys.
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2004. 432. P. C. Chang, C. H.
Chen, S. J. Chang, Y. K. Su, P. C. Chen, Y. D. Jhou, H.
Hung, C. M. Wang and B. R. Huang, "InGaN/GaN MQW MIS
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2004. 433. H. C. Yu, S.
J. Chang, Y. K. Su, C. P. Sung, H. P. Yang, C. Y. Huang, Y. W.
Lin, J. M. Wang, F. I. Lai, H. C. Kuo, "Improvement of high speed
oxide confined vertical cavity surface emitting lasers", Jpn.
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S. C. Wei, S. J. Chang, C. C. Sio and S. C. Chen, "Reduction of turn-on voltage in
GaInNAs/InGaAs base double heterojunction bipolar transistors", Jpn. J. Appl. Phys., Vol. 43, No. 4B, pp. 1919-1921, April 2004. 435. S. J. Chang, C. S.
Chang, Y. K. Su, R. W. Chuang, W. C. Lai, C. H. Kuo, Y. P. Hsu, Y. C.
Lin, S. C. Shei, H. M. Lo, J. C. Ke and J. K. Sheu, "Nitride-based LEDs
with an SPS tunneling contact layer and an ITO transparent contact", IEEE Photon. Technol. Lett., Vol. 16, No. 4, pp. 1002-1004, April 2004. 436. Y. K. Su, C. H. Wu,
Y. S. Huang, Y. P. Hsu, W. C. Chen, S. H. Hsu and S. J. Chang, "Piezoreflectance and contactless
electroreflectance spectra of an optoelectronic material: GaInNP grown on
GaAs substrates", J. Crystal Growth, Vol. 264, No. 1-3, pp. 1919-1921, March 2004. 437. C. H. Liu, S. J. Chang, J. F. Chen, J. S. Lee, S. C. Chen and
U. H. Liaw, "Electrical and reliability
characteristics of oxynitride gate dielectric grown by diluted steam rapid
thermal oxidation and annealed in nitric oxide", Mater. Sci. Eng. B, Vol. 107, No. 3, pp. 310-316, March 2004. 438. C. S. Chang, S. J. Chang,
Y. K. Su, C. T. Lee, Y. C. Lin, W. C. Lai, S. C. Shei, J. C. Ke and H. M. Lo,
"Nitride-based LEDs with textured side walls", IEEE Photon. Technol. Lett., Vol. 16, No. 3, pp. 750-752, March 2004. 439. K. T. Liu, T.
Tezuka, S. Sugita, Y. Watari, Y. Horikoshi, Y. K. Su and S. J. Chang, "Modulated beam growth method
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J. Chang, C. S. Chang, L. W. Wu, W. C. Lai, X. L. Du and H. Chen,
"InGaN/GaN multi-quantum
dot light-emitting diodes",
J.
Crystal Growth, Vol. 263,
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J. Chang, T. H. Fang, T. C. Wen, and S. C. Hung, "Growth of ultra small
self-assembled InGaN nanotips",
J.
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Y. K. Su, S. J. Chang, L. W. Ji, C. S. Chang, L. W. Wu, W. C.
Lai, T. H. Fang and K. T. Lam, "InGaN/GaN blue light-emitting diodes
with self-assembled quantum dots", Semicond.
Sci. Technol., Vol. 19,
No. 3, pp. 389-392, March 2004. 443. Y. K. Su, C. H. Wu,
S. H. Hsu, S. J. Chang,
W. C. Chen, Y. S. Huang and H. P. Hsu, "Observation of spontaneous ordering in the optoelectronic material
GaInNP", Appl. Phys. Lett.,
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L. W. Ji, Y. K. Su, S.
J. Chang, S. C. Hung, C. K. Wang, T. H. Fang, T. Y. Tsai,R.
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photodiodes with nanostructures", Jpn. J. Appl. Phys., Vol. 43, No. 2, pp.
518-521, February 2004. 445. X. H. Wang, X. W. Fan, C. X. Shan, Z. Z. Zhang, W. Su, J.
Y. Zhang, Y. K. Su, S. J. Chang, Y. M. Lu, Y. C. Liu and D. Z. Shen, "Growth
of ZnSe films on ZnO-Si templates", Mater.
Sci. Eng. B, Vol. 107, No. 1, pp. 84-88, February 2004. 446. C. H. Liu, S. J. Chang, J. F. Chen, S.
C. Chen, J. S. Lee and U. H. Liaw, "High quality ultra thin
chemical-vapor-deposited Ta2O5 capacitors prepared by
high density plasma annealing", Mater.
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106, No. 3, pp. 234-241, February 2004. 447. Y. P. Hsu, S. J. Chang, Y. K. Su, J. K. Sheu, C. T. Lee,
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C. Shei, "Lateral
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S. J. Chang, J. F.
Chen, U. H. Liaw and S. C. Chen, "Ion Implantation technology for
improved GaAs MESFETs performance", J.
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H. C.
Yu, S. J. Chang, Y. K. Su, C. P. Sung, Y. W. Lin, H. P.
Yang, C. Y. Huang and J. M. Wang, "A
simple process for fabrication of high speed vertical cavity surface emitting
lasers", Mater. Sci.
Eng. B, Vol. 106, No. 1, pp. 101-104, January 2004. 450.
C. H. Kuo, S. J. Chang, Y K. Su, C. S. Chang, L. W. Wu, W. C.
Lai, J. F. Chen, J. K.
Sheu, H. M. Lo and J. M. Tsai,
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contact", Mater. Sci. Eng. B, Vol. 106, No. 1, pp.
69-72, January 2004. 451.
S.
J. Chang,
C. H. Chen, P. C. Chang, Y. K. Su, P. C. Chen, Y. D. Jhou, H. Hung, C. M. Wang and B. R. Huang,
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Su, Y. C. Lin, R. W. Chuang, C. S. Chang, J. K. Sheu, T. C. Wen, S. C. Shei,
C. W. Kuo and D. H. Fang, "MOCVD growth of InGaN/GaN light emitting
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December 2003. 453. C. H. Chen, S.
J. Chang
and Y. K. Su, "InGaN/GaN
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Phys. Stat. Sol. C, Vol.
0, No. 7, pp. 2257-2260, December 2003. 454. C. K. Wang, S. J. Chang, Y. K. Su, Y. Z.
Chiou, T. K. Lin and B. R. Huang, "Low
interface state density AlGaN/GaN MOSHFETs with photochemical vapor
deposition SiO2 layers", Phys.
Stat. Sol. C, Vol. 0, No. 7, pp. 2355-2359, December 2003. 455. Y. M. Lin, S. L. Wu, S.
J. Chang, S. Koh
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transistor", Jpn. J. Appl. Phys.
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J. Chang, Y. K.
Su, C. H. Kuo and T. K. Ko, "High transconductance AlGaN/GaN MOSHFETs
with photo-CVD gate oxide", Semicond.
Sci. Technol., Vol. 18, No. 12,
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Su, S. J. Chang,
H. C. Yu, L. W. Ji, L. Li and Y. J. Zhao, "Design and numerical simulation
of novel DBRs", Chinese Opt. Lett.,
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J. Chang and Y.
K. Su, "High electrostatic discharge protection of InGaN/GaN MQW LEDs by using
GaN Schottky diodes", Phys. Stat. Sol. (a), Vol. 200, No. 1, pp. 91-94, November 2003. 459. C. S. Chang, S. J. Chang, Y. K. Su, C. H. Kuo,
W. C. Lai, Y. C. Lin, Y. P. Hsu, S. C. Shei, C. M. Tsai, H. M. Lo, J. C. Ke and J.
K. Sheu, "High brightness InGaN LEDs with an ITO on n++-SPS
upper contact", IEEE Tran.
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Wen, W. C. Lai, J. M. Tsai and C. C. Lin, "Nitride-based blue
LEDs with GaN/SiN double buffer layers", Solid State Electron., Vol. 47, No.
11, pp. 2019-2022, November 2003. 461. S. J.
Chang, T. M. Kuan, Y. K.
Su, C. H. Ko, J. B. Webb, J. A. Bardwell, Y. Liu, H. Tang, W. J. Lin, Y. T.
Cherng and W. H. Lan, "Nitride-based 2DEG
photodetectors with a large AC responsivity", Solid State Electron., Vol.
47, No. 11, pp. 2023-2026, November 2003. 462. L. W. Wu, S.
J. Chang, Y. K.
Su, R. W. Chuang, Y. P. Hsu, C. H. Kuo, W. C. Lai, T. C. Wen, J. M. Tsai and
J. K. Sheu, "In0.23Ga0.77N/GaN MQW LEDs with a low
temperature GaN cap layer", Solid
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Chang, C. S. Chang, Y. K.
Su, R. W. Chuang, Y. C. Lin, S. C. Shei, H. M. Lo, H. Y. Lin and
J. C. Ke, "Highly reliable nitride based LEDs with SPS+ITO upper
contacts", IEEE J. Quan.
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J. Chang, S. H.
Liu, C. K. Wang, S. T. Tsai, T. H. Fang, L. W. Wu and Q, K. Xue, "InGaN
quantum dot photodetectors", Solid State Electron., Vol. 47, No. 10, pp. 1753-1756, October 2003. 465. Y. K. Su, S. C. Wei, R. L. Wang, S.
J. Chang, C. H. Ko and T. M. Kuan, "Flicker noise of GaN-based heterostructure
field-effect transistors with Si-doped AlGaN carrier injection layer", IEEE
Electron. Dev. Lett., Vol. 24, No. 10, pp. 622-624, October 2003. 466. L. W. Ji, Y. K. Su, S.
J. Chang, L. W. Wu, T. H. Fang, Q. K. Xue, W. C. Lai and Y. Z.
Chiou, "A novel method to fabricate InGaN self-assembled quantum dots by
metalorganic chemical vapor deposition", Mater. Lett., Vol. 57, No.
26-27, pp. 4218-4221, September 2003. 467. C. H. Ko, Y K. Su, S. J. Chang, T. Y. Tsai, T.
M. Kuan, W. H. Lan, J. C. Lin, W. J. Lin, Y. T. Cherng and J. B. Webb,
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Phys., Vol. 82, No. 1, pp. 55-60, September 2003. 468. T. M. Kuan, S. J. Chang, C. H. Ko, Y. K. Su, J. B. Webb, J. A. Bardwell, Y. Liu, H.
Tang, W. J. Lin, Y. T. Cherng and W. H. Lan, "High
optical gain AlGaN/GaN 2DEG photodetectors", Jpn. J. Appl. Phys. Lett , Vol.
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Chang, T. C. Wen, S. C. Shei,
J. C. Ke, C. W. Kuo, S. C. Chen and C. H. Liu, "Nitride-based LEDs fabricated on patterned sapphire
substrates", Solid State Electron., Vol. 47, No. 9, pp. 1539-1542, September
2003. 470. Y. C. Lin, S. J. Chang, Y. K. Su, C. S. Chang, S. C. Shei, J. C. Ke, H. M. Lo, S. C. Chen
and C. W. Kuo, "High power nitride based
light emitting diodes with Ni/ITO p-type contacts", Solid State Electron., Vol. 47, No. 9,
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L. W. Wu, S. J. Chang, Y.
K. Su, R. W. Chuang, T. C. Wen, C. H. Kuo, W. C. Lai, C. S. Chang, J. M. Tsai
and J. K. Sheu, "Nitride-based green light emitting diodes with high
temperature GaN barrier layers", IEEE
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M. L. Lee, J. K. Sheu, W. C. Lai, Y. K.
Su, S. J. Chang, C.
J. Kao, C. J. Tun, M. G. Chen, W. H. Chang, G. C. Chi and J. M. Tsai,
"Characterization of GaN Schottky barrier photodetectors with a
low-temperature GaN cap layer", J.
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C. H. Liu, C. S. Chang S.
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Su, Y. Z. Chiou, S. H. Liu and B. R. Huang, "The characteristics of
photo-CVD SiO2 and its application on SiC MIS
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C. S. Chang, S.
J. Chang, Y. K. Su, Y. Z. Chiou, Y. C. Lin, Y. P. Hsu, S. C.
Shei, J. C. Ke, H, M, Lo, S. C. Chen and C. H. Liu,
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with an Mg-doped current confinement layer", Jpn. J. Appl. Phys.,
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C. H. Liu, Y. K. Su, L. W. Wu, S.
J. Chang and R. W. Chuang, "Tunneling efficiency of n+-InGaN/GaN
SPS tunneling contact layer for nitride-based LEDs", Semicond. Sci.
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X. D. Chen, Y. Huang, S.
Fung, C. D. Beling, C. C. Ling, J. K. Sheu, M. L. Lee, G. C. Chi and S. J. Chang, "Deep level defect in
Si-implanted GaN n+-p junction", Appl. Phys. Lett., Vol. 82, No. 21, pp. 3671-3673, May 2003. 480.
Y. Z. Chiou, Y. K. Su, S.
J. Chang, J.
Gong, C. S. Chang and S. H. Liu, "The properties of photo chemical vapor
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J. K. Sheu, C. J. Kao, M. L. Lee, W. C.
Lai, L. S. Yeh, G. C. Chi, S. J. Chang, Y. K.
Su and J. M. Tsai, "Nitride-based ultraviolet metal-semiconductor-metal
photodetectors with a low-temperature GaN layer", J. Electron. Mater., Vol. 32, No. 5, pp. 400-402, May 2003. 482. Y. P. Hsu, S.
J. Chang, Y. K. Su, C. S. Chang, S. C. Shei. Y. C. Lin, C. H. Kuo, L. W. Wu and S. C. Chen, "InGaN/GaN
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C. K. Wang, Y. Z. Chiou, S. J. Chang, Y. K. Su, B.
R. Huang, T. K. Lin and S. C. Chen, "AlGaN/GaN metal oxide
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J. K. Sheu, J. M. Tsai, S. C. Chen and B. R. Huang, "InGaN/GaN LEDs with
a Si-doped InGaN/GaN short-period superlattice tunneling contact layer",
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J. Chang, Y. K. Su, L.
W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. M. Tsai and S. C.
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light-emitting diodes prepared by temperature ramping", J. Electron. Mater., Vol. 32, No. 5, pp. 419-422, May 2003. 487. Y. Z. Chiou, Y. K.
Su, S. J. Chang, J. Gong, Y. C. Lin, S, H, Liu and
C. S. Chang, "InGaN/GaN multiquantum well p-n junction
photodiodes", IEEE J. Quan. Electron., Vol. 39, No. 5, pp. 681-685, May 2003. 488. Y. K. Su, S.
J. Chang, Y. Z.
Chiou, T. Y. Tsai, J. Gong, Y. C. Lin, S. H. Liu and C. S. Chang,
"Nitride-based multiquantum well p-n junction photodiodes", Solid State Electron., Vol. 47, No. 5, pp.
879-883, May 2003. 489. L. S. Yeh, M. L.
Lee, J. K. Sheu, M. G. Chen, C. J. Kao, C. J. Tun, G. C. Chi, S. J.
Chang and Y. K. Su, "Visible-blind GaN p-i-n photodiodes
with an Al0.12Ga0.88N/GaN superlattice structure",
Solid State Electron., Vol. 47, No.
5, pp. 873-878, May 2003. 490. Y. C. Lin, S.
J. Chang, Y. K. Su, T. Y. Tsai, S. C. Chang, S. C. Shei, C. W.
Kuo and S. C. Chen, “InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and
ITO p-type contacts”, Solid State
Electron., Vol. 47, No. 5, pp. 849-853, May 2003. 491. S. C. Wei,
Y. K. Su, T. M. Kuan, R. L. Wang, S. J. Chang, C. H. Ko, J.
B. Webb and J. A. Bardwell, "Investigation of low frequency noise of GaN-based heterostructure field effect
transistors", Electron.
Lett.,
Vol. 39, No. 11, pp. 877-878, May 2003. 492. S.
J. Chang, M. L. Lee, J. K. Sheu, W. C.
Lai, Y. K. Su, C. S. Chang, C. J. Kao, G. C. Chi and J. M. Tsai, "GaN
metal-semiconductor-metal photodetectors with low-temperature GaN cap layers
and ITO metal contacts", IEEE
Electron. Dev. Lett., Vol. 24, No. 4, pp. 212-214, April 2003. 493. Y. Z. Chiou, Y. K.
Su, S. J. Chang and C. H. Chen, "GaN metal semiconductor interface and its
applications in GaN and InGaN metal semiconductor metal photodetectors",
IEE Proc. - Optoelectron., Vol. 150, No.
2, pp. 115-118, April 2003. 494. C. S. Chang, S.
J. Chang, Y. K. Su, Y. C. Lin, Y. P. Hsu, S. C. Shei, S. C. Chen,
C. H. Liu and U. H. Liaw, “InGaN/GaN light emitting diodes with ITO p-contact
layers prepared by RF sputtering”, Semicond. Sci. Technol., Vol. 18,
No. 4, pp. L21-L23, April 2003. 495. C. H. Kuo, S. J. Chang,
Y. K. Su, L. W. Wu, J. F. Chen, J. K. Sheu and J. M. Tsai, "GaN-based
light emitting diodes with Si-doped In0.23Ga0.77N/GaN
short period superlattice current spreading layer", Jpn. J. Appl. Phys., Vol. 42, No. 4B, pp. 2270-2272, April 2003. 496. C. H. Chen, S.
J. Chang and Y. K. Su, "High indium content InGaN/GaN
multiple quantum well yellowish green light emitting diodes", Jpn. J. Appl. Phys., Vol. 42, No.
4B, pp. 2281-2283, April 2003. 497. C. H. Kuo, J. K. Sheu, S. J. Chang, Y. K. Su,
L. W. Wu, J. M. Tsai, C. H. Liu and R. K. Wu,
"n-UV+blue/green/red white light emitting diode lamps", Jpn. J. Appl. Phys., Vol. 42, No.
4B, pp. 2284-2287, April 2003. 498. M. L. Lee, J. K. Sheu, W. C. Lai, S. J. Chang,
Y. K. Su, M. G. Chen, C. J. Kao, G. C. Chi and J. M. Tsai, "GaN Schottky barrier
photodetectors with a low-temperature GaN cap layer", Appl. Phys. Lett., Vol. 82, No. 17, pp. 2913-2915, April
2003. 499. Y. Z. Chiou, J. R.
Chiou, Y. K. Su, S. J. Chang, B. R. Huang, C. S. Chang and Y.
C. Lin, "The characteristics of different transparent electrodes on GaN
photodetectors", Mater. Chem.
Phys.,
Vol. 80, No. 1, pp. 201-204, April 2003. 500. H. R. Wu, K. W. Lee, T. B. Nian, D. W.
Chou, J. J. Huang, Y. H. Wang, M. P. Houng, P. W. Sze, Y. K. Su, S. J. Chang, C. H. Ho, C.
I. Chiang, Y. T. Chern, F. S. Juang, T. C. Wen, W. I. Lee and J. I. Chyi, "Liquid
phase deposited SiO2 on GaN", Mater. Chem. Phys., Vol. 80, No. 1, pp. 329-333, April 2003. 501. S. J. Chang,
C. H. Chen, Y. K. Su, J. K. Sheu, W. C. Lai, J. M. Tsai, C. H. Liu and S. C.
Chen, "Improved ESD protection by combining InGaN/GaN MQW LED with GaN
Schottky diode", IEEE Electron. Dev. Lett., Vol. 24, No. 3, pp. 129-131, April 2003. 502. Y. M. Lin, S. L. Wu,
S.
J. Chang, S. Koh and Y. Shiraki, "SiGe heterostructure
field-effect transistor using V-shaped confining potential well", IEEE
Electron. Dev. Lett., Vol. 24, No. 2, pp. 69-71, February 2003. 503. S. J. Chang,
L. W. Wu, Y. K. Su, C. H. Kuo, W. C. Lai, Y. P. Hsu, J. K. Sheu, J. F. Chen
and J. M. Tsai, "Si and Zn co-doped InGaN/GaN white light emitting
diodes", IEEE Tran. Electron. Dev., Vol. 36, No. 2, pp. 519-521, February 2003. 504. C. H. Kuo, S.
J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, W. C. Lai,
T. C. Wen and J. M. Tsai, "Nitride-based light-emitting
diodes with Si-doped In0.23Ga0.77N/GaN short period
superlattice tunneling contact layer", IEEE Tran. Electron. Dev., Vol. 36, No. 2,
pp. 535-537, February 2003. 505. Y. C. Lin, S.
J. Chang, Y. K. Su, J. F. Chen, S. C. Shei, S. J. Hsu, C. H. Liu,
U. H. Liaw and B. R. Huang, “Inductively coupled plasma etching of GaN using
Cl2/He gases”, Mater. Sci. Eng. B, Vol. 98, No. 1, pp. 60-64, February 2003. 506.
S.
J. Chang, Y. K. Su, Y. Z. Chiou, J. R.
Chiou, B. J. Huang, C. S. Chang and J. F. Chen, "Deposition of SiO2
layers on GaN by photo chemical vapor deposition", J. Electrochem. Soc., Vol. 150, No. 2, pp. C77-C80, February
2003. 507.
L. W. Ji, Y. K. Su, S. J.
Chang, L. W. Wu, T. H. Fang, J. F. Chen, T. Y. Tsai, Q. K. Xue
and S. C. Chen, "Growth of nanoscale InGaN self-assembled quantum dots
and their room-temperature photoluminescence", J. Crystal Growth, Vol. 249, No. 1-2, pp. 144-148, February 2003. 508.
Y. Z. Chiou, C. S. Chang, S. J. Chang, Y. K. Su, J. R. Chiou, B. J. Huang and J. F.
Chen, "Deposition of SiO2 layers on 4H-SiC by photo chemical
vapor deposition", J.
Vac. Sci. Technol. B, Vol.
21, No. 1, pp. 329-331, January 2003. 509.
J. K. Sheu, S.
J. Chang, C. H.
Kuo, Y K. Su, L. W. Wu, Y. C. Lin, J. M. Tsai, R. K. Wu and G. C. Chi,
"White light emission from near UV InGaN/GaN LED chip precoated with
blue/green/red phosphors", IEEE Photon. Technol. Lett., Vol.
15, No. 1, pp. 18-20, January 2003. 510. P. W. Chien, S. C.
Li, S. L. Wu and S. J. Chang, "Fabricating ��-doped layers in
silicon by ultra high vacuum chemical vapor deposition", Mater. Chem. Phys. Vol. 77, No. 2, pp. 426-429, January 2003. 511.
J. S. Lee, S.
J. Chang, J. F. Chen, S. C. Sun, C. H. Liu and U. H. Liaw,
"Effects of O2 thermal
annealing on the properties of CVD Ta2O5 thin
films", Mater.
Chem. Phys., Vol.
77, No. 1, pp. 242-247, January 2003. 512.
Y. C. Lin, S. J. Chang,
Y. K. Su, T. Y. Tsai, C. S. Chang, S. C. Shei, S. J. Hsu, C. H. Liu, U. H.
Liaw, S. C. Chen and B. R. Huang, “Nitride-based light emitting diodes with
Ni/ITO p-type ohmic contacts”, IEEE
Photon. Technol. Lett., Vol. 14, No. 12, pp. 1668-1670, December
2002. 513. H. Tang, J. B. Webb, S. Rolfe, J. A.
Bardwell, D. Tomka, P. Coleridge, C. H. Ko, Y. K. Su and S. J. Chang,
"GaN/AlGaN two-dimensional electron gas grown by ammonia-MBE on MOCVD
GaN template", Phys. Status Solidi B, Vol. 234, No. 3, pp. 822-825, December 2002. 514. M. L. Lee, J. K. Sheu, L. S. Yeh, M. S.
Tsai, C. J. Kao, C. J. Tun, S. J. Chang
and G. C. Chi, "GaN p-n junction diode formed by Si ion implantation into
p-GaN", Solid State Electron.,
Vol. 46, No. 12, pp. 2179-2183, December 2002.. 515. Y. Z. Chiou, Y. K. Su, S.
J. Chang,
Y. C. Lin, C. S. Chang and C. H. Chen, "InGaN/GaN MQW P-N junction
photodetectors", Solid State Electron., Vol. 46, No. 12, pp.
2227-2229, December 2002. 516. Y. K. Su, Y. Z. Chiou, C. S. Chang, S. J. Chang,
Y. C. Lin and J. F. Chen, "4H-SiC metal-semiconductor-metal ultraviolet
photodetectors with Ni/ITO electrodes", Solid State Electron., Vol. 46, No. 12, pp. 2237-2240,
December 2002. 517. H. Tang, J. B. Webb, P. Coleridge, J.
A. Bardwell, C. H. Ko, Y. K. Su and S. J. Chang, “Scattering lifetimes due to interface roughness
with large lateral correlation length in AlxGa1-xN/GaN
two-dimensional electron gas”, Phys. Rev.
B, Vol. 66, No. 24, Art.
no. 245305, December 2002. 518. S. J. Chang, W. C. Lai, J. F.
Chen, S. C. Chen, B. R. Huang, C. H. Liu and U. H. Liaw, "Be diffusion in GaN", Mater.
Charact., Vol. 49, No. 4, pp. 337-341, November 2002. 519. S. J. Chang, J. S. Lee, J. F. Chen, S. C. Sun,
C. H. Liu, U. H. Liaw and B. R. Huang, "Improvement of electrical and reliability properties of tantalum
pentoxide by high density plasma (HDP) annealing in N2O", IEEE Electron. Dev. Lett., Vol. 23,
No. 11, pp. 643-645, November 2002. 520. J. K. Sheu, M. L. Lee, L. S. Yeh, C. J.
Kao, C. J. Tun, M. G. Chen, G. C. Chi, S. J. Chang,
Y. K. Su and C. T. Lee, "Planar GaN n+-p photodetectors
formed by Si implants into p-GaN", Appl. Phys. Lett., Vol. 81, No. 22, pp. 4263-4265, November 2002. 521. B. R. Huang and S.
J. Chang,
"The electrical conduction mechanism for the polycrystalline diamond
membrane in the voltage range of +-50 V", Mater. Lett., Vol. 56, No. 5, pp. 867-872,
November 2002. 522. C. H. Lee, S. L. Wu,
S. J. Chang, A. Miura, S. Koh, Y. Shiraki, "A novel
triple ��-doped SiGe heterostructure field-effect transistor", Jpn. J.
Appl. Phys. Lett., Vol. 41, No. 11A, pp. L1212-L1214, November 2002. 523.
P. W. Chien, S. L. Wu, S. C. Lee, S.
J. Chang, H. Miura, S. Koh and Y. Shiraki, "P-type delta
doped SiGe/Si heterostructure field-effect transistors", Electron.
Lett., Vol. 38, No. 21,
pp. 1289-1291, October 2002. 524. C. H. Ko, Y
K. Su, S. J. Chang, W. H. Lan, J. Webb, M. C. Tu and Y. T.
Cherng, "Photo-enhanced chemical wet etching of GaN", Mater.
Sci. Eng. B, Vol. 96, pp. 43-47,
October 2002. 525. S.
J. Chang, Y. K. Su, T. Yang, C. S. Chang,
T. P. Chen and K. H. Huang, "AlGaInP/sapphire glue bonded light emitting
diodes", IEEE J. Quan. Electron.,
Vol. 38, No. 10, pp. 1390-1394, October 2002. 526. Y. K. Su, J. Zhong
and S. J. Chang,
"A novel vertical cavity surface emitting laser with
semiconductor/superlattice distributed Bragg reflectors", IEEE
Photon. Technol. Lett.,
Vol. 14, No. 10, pp. 1388-1390, October 2002. 527. Y. K. Su, S. J. Chang, C. H. Ko, J.
F. Chen, W. H. Lan, W. J. Lin, Y. T. Cherng and J. Webb, "InGaN/GaN
light emitting diodes with a p-down structure", IEEE Tran. Electron. Dev., Vol. 49, No. 8, pp. 1361-1366, August
2002. 528. W. R. Chen, S. J. Chang, Y. K. Su, J.
F. Chen, W. H. Lan, W. J. Lin, Y. T. Cherng, C. H. Liu and U. H. Liaw, "ZnCdSeTe-based orange light
emitting diode", IEEE Photon. Technol. Lett., Vol. 14, No. 8, pp. 1061-1063, August 2002. 529.
Y. K. Su, C. H. Wu, J. R. Chang, K. M.
Wu, H. C. Wang, W. B. Chen, S. J. You and S. J. Chang, "Well width dependence for novel
AlInAsSb/InGaAs double barrier resonant tunneling diode", Solid State Electron., Vol. 46, pp.
1109-1111, August 2002. 530.
Y. K. Su, S. J. Chang, C. H. Chen, J. F. Chen, G. C. Chi. J.
K. Sheu, W. C. Lai and J. M. Tsai, "GaN metal-semiconductor-metal
ultraviolet sensors with various contact electrodes", IEEE Sensors
Journal, Vol. 2, No. 4, pp.
366-371, July/August 2002. 531.
J. K. Sheu, M. L. Lee, C. J. Tun, C. J.
Kao, L. S. Yeh, S. J. Chang and G. C. Chi,
"Characterization of Si implants in p-type GaN", IEEE J. Sel. Top. Quan. Electron.,
Vol. 8, No. 4, pp. 767-772, July/August 2002. 532.
S. J. Chang,
C. H. Kuo, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai,
J. F. Chen and J. M. Tsai, "400nm InGaN/GaN and InGaN/AlGaN multiquantum
well light-emitting diodes", IEEE
J. Sel. Top. Quan. Electron., Vol. 8, No. 4, pp. 744-748, July/August
2002. 533. W. R. Chen, S.
J. Chang, Y. K. Su, J. F. Chen, W. H. Lan, W. J. Lin, Y. T.
Cherng, C. H. Liu and U. H. Liaw, "ZnSe epitaxial layers and ZnSSe/ZnSe strain layer
superlattices grown by molecular beam epitaxy", Superlattice
Microst., Vol. 32, No. 1,
pp. 59-63, July 2002. 534. D. W. Chou, K. W.
Lee, J. J. Huang, H. R. Wu, Y. H. Wang, M. P. Houng, S. J. Chang and Y. K. Su, "AlGaN/GaN metal
oxide semiconductor heterostructure field-effect transistor based on a liquid
phase deposited oxide", Jpn. J.
Appl. Phys. Lett., Vol. 41, No. 7A, pp. L748-L750, July 2002. 535. C. H. Chen, S.
J. Chang, Y. K. Su, J. K. Sheu, J. F. Chen, C. H. Kuo and Y. C.
Lin, "Nitride-based cascade near white light emitting diodes", IEEE Photon. Technol. Lett., Vol. 14,
No. 7, pp. 908-910, July 2002. 536. K. W. Lee, D. W.
Chou, J. J. Huang, H. R. Wu, Y. H. Wang, M. P. Houng, S. J. Chang and Y. K. Su, "GaN MOSFET with
liquid phase deposited oxide", Electron. Lett., Vol. 38, No. 15, pp. 829-830, July 2002. 537. Y. Z. Chiou, Y. K.
Su, S. J. Chang,
J. F. Chen, C. S. Chang, S. H. Liu, I. C. Lin and C. H. Chen,
"Transparent TiN electrodes in GaN metal-semiconductor-metal ultraviolet
photodetectors", Jpn. J. Appl.
Phys., Vol. 41, No. 6A, pp. 3643-3645, June 2002. 538.
T. C. Wen, S. J. Chang, L. W. Wu, Y. K. Su, W. C. Lai C. H.
Kuo, C. H. Chen, J. K. Sheu and J. F. Chen, "InGaN/GaN tunnel injection
blue light emitting diodes", IEEE Tran. Electron. Dev., Vol. 49,
No. 6, pp. 1093-1095, June 2002. 539.
L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, W. C. Lai, C. H.
Kuo, C. H. Chen and J. K. Sheu, "Influence of Si-doping on the
characteristics of InGaN/GaN multiple quantum well blue light emitting
diodes", IEEE J. Quan. Electron., Vol. 38, No. 5, pp. 446-450,
May 2002. 540. C. H. Kuo, S.
J. Chang, Y. K. Su, J. F. Chen, L. W. Wu, J. K. Sheu, C. H. Chen
and G. C. Chi, "InGaN/GaN light emitting diodes activated in O2
ambient", IEEE Electron. Dev. Lett., Vol. 23, No. 5, pp. 240-242,
May 2002. 541. C. Y. Su, L. P.
Chen, S. J. Chang,
B. M. Tseng, D. C. Lin, G. W. Huang, Y. P. Ho, H. Y. Lee, J. F. Kuan, W. Y.
Wen, P. Liou, C. L. Chen, L. Y. Leu, K. A. Wen and C. Y. Chang, "A macro
model of silicon spiral inductor", Solid
State Electron., Vol. 46, No. 5, pp. 759-767, May 2002. 542. C. H. Ko, Y K. Su, S.
J. Chang, T. M. Kuan, C. I. Chiang, W. H. Lan, W. J. Lin and J.
Webb, "A p-down InGaN/GaN MQW LED structure grown by MOVPE", Jpn.
J. Appl. Phys., Vol. 41, No. 4B, pp. 2489-2492, April 2002. 543.
J. K.
Sheu, C. J. Pan, G. C. Chi, C. H. Kuo, L. W. Wu, C. H. Chen, S. J.
Chang and Y. K. Su, "White-light emission from InGaN/GaN
multi-quantum well light-emitting diodes with Si and Zn codoped active
layer", IEEE Photon. Technol. Lett., Vol. 14, No. 4, pp. 450-452,
April 2002. 544.
S. J. Chang,
W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu and U. H. Liaw, "InGaN/GaN
multiquantum well blue and green light emitting diodes", IEEE J. Sel. Top. Quan. Electron.,
Vol. 8, No. 2, pp. 278-283, March/April 2002. 545.
C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. K. Sheu and J. F.
Chen, "High efficient InGaN/GaN MQW green light emitting diodes with
CART and DBR structures", IEEE J.
Sel. Top. Quan. Electron., Vol. 8, No. 2, pp. 284-288, March/April 2002. 546.
C. H. Chen, Y. K. Su, S. J. Chang, G. C. Chi, J.
K. Sheu, J. F. Chen, C. H. Liu and U. H. Liaw, "High brightness green light emitting diode with charge asymmetric
resonance tunneling structure", IEEE Electron. Dev. Lett., Vol. 23, No. 3, pp. 130-132, March
2002. 547.
C. H. Ko, S. J. Chang, Y. K. Su, W.
H. Lan, J. F. Chen, T. M. Kuan, Y. C. Huang, 5C. I.
Chiang, J. Webb and W. J. Lin, "On the carrier concentration and Hall
mobility in GaN epitaxial layers", Jpn. J. Appl. Phys. Lett.,
Vol. 41, No. 3A, pp. L226-L228, March 2002. 548. J. S. Lee, S. C.
Sun, S. J. Chang, J.
F. Chen, C. H. Liu and U. H. Liaw, "Effects of interfacial oxide layer
for the Ta2O5 capacitor after high temperature
annealing", Jpn. J. Appl. Phys.,
Vol. 41, No. 2A, pp. 690-693, February 2002. 549. J. K. Sheu, C. J.
Tun, M. S. Tsai, C. C. Lee, G. C. Chi, S. J. Chang and
Y. K. Su, "n+-GaN formed by Si implantation into p-GaN",
J. Appl. Phys., Vol. 91, No. 4, pp. 1845-1848, February 2002. 550. S. J. Chang, Y. K. Su,
W. R. Chen, J. F. Chen, W. H. Lan, W. J. Lin, Y. T. Cherng, C. H. Liu and U.
H. Liaw, "ZnSTeSe metal-semiconductor-metal photodetectors", IEEE
Photon. Technol. Lett., Vol. 14, No. 2, pp. 188-190, February 2002. 551.
S.
J. Chang, Y. K. Su, W. R. Chen, J. F.
Chen, M. H. Chen, F. S. Juang, W. H. Lan, W. J. Lin, Y. T. Cherng, C. H. Liu
and U. H. Liaw, "ZnMgSSe metal-semiconductor-metal visible-blind
photodetectors with transparent indium-tin-oxide contact electrodes", Jpn.
J. Appl. Phys. Lett., Vol. 41, No. 2A, pp.
L115-L117, February 2002. 552. C. H. Kuo, S.
J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, C. H. Chen and
G. C. Chi, "Low temperature activation of Mg-doped GaN in O2
ambient", Jpn. J. Appl. Phys. Lett., Vol. 41, No. 2A, pp.
L112-L114, February 2002. 553. S.
J. Chang,
J. S. Lee, M. C. Wei, J. F. Chen, C.
H. Liu and U. H. Liaw, "Effects of photo-assisted O2
annealing on the properties of (Ba,Sr)TiO3 thin films", J. Vac. Sci. Technol., Vol. 20, No. 1,
pp. 107-111, January 2002. 554. C. Y. Su, L. P. Chen, S. J. Chang, G. W. Huang, D. C. Lin, Y. P. Ho, B. M. Tseng, H. Y. Lee, J. F. Kuan,
Y. M. Deng, K. A. Wen and C. Y. Chang, "An automatic macro program for
radio frequency MOSFETs characteristics analysis", Microwave Journal, Vol.
44, No. 10, pp. 99-108, October 2001. 555. J. K. Sheu, J. M. Tsai, S. C. Shei, W.
C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang
and G. C. Chi, "Low-operation voltage of InGaN/GaN light-emitting diodes
with Si-doped In0.3Ga0.7N/GaN short-period superlattice
tunneling contact layer", IEEE Electron. Dev. Lett., Vol. 22, No.
10, pp. 460-462, October 2001. 556.
C. H. Chen, S. J. Chang,
Y. K. Su, G. C. Chi, J. Y. Chi, C. A. Chang, J. K. Sheu and J. F. Chen,
"GaN metal-semiconductor-metal ultraviolet photodetectors with
transparent indium-tin-oxide Schottky contacts", IEEE Photon.
Technol. Lett., Vol. 13, No. 8, pp. 848-850, August 2001. 557.
C. Y. Su, B. M. Tseng, S. J.
Chang and L. P. Chen, "Scalable RF MIS varactor model",
Electron. Lett., Vol. 37, No. 12,
pp. 760-761, June 2001. 558.
W. C. Lai, S. J. Chang,
M. Yokoyama, J. K. Sheu and J. F. Chen, "InGaN/AlInGaN light emitting
diodes", IEEE Photon.
Technol. Lett., Vol. 13, No. 6, pp. 559-561, June 2001. 559.
K. S. Ramaiah, Y. K. Su, S. J.
Chang, F. S. Juang, K. Ohdaira, Y. Shiraki, H. P. Liu, I. G. Chen
and A. K. Bhatnagar, "Characterization of Cu doped CdSe thin films gown
by vacuum evaporation", J. Crystal Growth, Vol. 224, No. 1-2, pp.
74-82, April 2001. 560.
S. J. Chang, Y. K. Su, J.
F. Chen, L. F. Wen and B. R. Huang, "Effects of electron effective mass
on the multiquantum barrier structure in AlGaInP laser diodes", IEE Proc. - Optoelectron., Vol. 148,
No. 2, pp. 117-120, April 2001. 561. Y. K. Su, Y. Z.
Chiou, F. S. Juang, S. J. Chang and J. K. Sheu,
"GaN and InGaN metal-semiconductor-metal photodetectors with different
Schottky contact metals", Jpn. J.
Appl. Phys., Vol. 40, No. 4B,
pp. 2996-2999, April 2001. 562. C. H. Chen, S.
J. Chang, Y. K. Su, G. C. Chi, J. K. Sheu and I. C. Lin, "Vertical high quality mirror-like facet of GaN-based devices
by reactive ion etching", Jpn. J. Appl. Phys.,
Vol. 40, No. 4B, pp. 2762-2764, April 2001. 563. C. Y. Su, L. P.
Chen, S. J. Chang, B. M. Tseng, D. C. Lin and H. Y. Lee,
"BSIM3v3-based varactor model", Electron.
Lett., Vol. 37, No. 8 , pp. 525-527, April 2001. 564. S. J. Chang, W. R. Chen, Y. K. Su, J. F. Chen, W. H.
Lan, C. I. Chiang, W. J. Lin, Y. T. Cherng and C. H. Liu, "Au/AuBe/Cr
contact to p-ZnTe", Electron. Lett., Vol. 37, No. 5, pp. 321-322, March 2001. 565. S. J. Chang, Y. K. Su, T. L. Tsai, C. Y. Chang, C. L.
Chiang, C. S. Chang, T. P. Chen and K. H. Huang, "Microwave treatment to
activate Mg in GaN", Appl. Phys.
Lett., Vol. 78, No. 3, pp. 312-313, January 2001. 566.
C. M. Lin, S.
J. Chang, M.
Yokoyama, I. N. Lin, J. F. Chen and B. R. Huang, "Field-emission
enhancement of Mo-tip field-emitted arrays fabricated by using a redox method",
IEEE Electron. Dev. Lett., Vol. 21, No. 12, pp. 560-562, December
2000. 567.
K. S. Ramaiah, Y. K. Su, S. J.
Chang, F. S. Juang and C. H. Chen, "Photoluminescence
characteristics of Mg- and Si-doped GaN thin films grown by MOCVD
technique", J. Crystal Growth, Vol. 220, pp. 405-412, December
2000. 568. J. S. Lee, S. J. Chang, S. C. Sun, S. M. Jang and M. C. Yu, "Electrical
properties of thin gate dielectric grown by rapid thermal oxidation", J. Vac. Sci. Technol., Vol. A18, No. 6, pp. 2986-2991,
November/December 2000. 569. W. C. Lai, M.
Yokoyama, S. J. Chang, J. D. Guo, C. H. Sheu, T. Y.
Chen, W. C. Tsai, J. S. Tsang, S. H. Chang and S. M. Sze, "Optical and electrical characteristics of
CO2 laser treated Mg-doped GaN film", Jpn. J. Appl. Phys. Lett., Vol. 39, No. 11B, pp. L1138-L1140,
November 2000. 570.
P. W. Chien, S. L. Wu, S.
J. Chang, Y. P. Wang, H. Miura and Y. Shiraki, "Device
linear improvement using SiGe/Si heterostructure delta-doped-channel field
effect transistor", Jpn. J. Appl.
Phys. Lett., Vol. 39, No. 11B,
pp. L1149-L1151, November 2000. 571. C. M. Lin, S.
J. Chang, M. Yokoyama and I. N. Lin, "Study of thermal
stability in diamond like carbon coated planar electron field emission
arrays", J. Vac. Sci. Technol., Vol. 18, No. 5, pp. 2424-2426,
September/October 2000. 572.
K. S. Ramaiah, V. S. Raja, A. K.
Bhatnagar, F. S. Juang, S. J. Chang and Y. K. Su,
"Effects of annealing and ��-radiation on the properties of CuInSe2
thin films", Mater. Lett., Vol. 45, pp. 251-261, September 2000. 573.
F. S. Juang, S. J. Chang, Y. K.
Su, C. C. Cheng and J. K. Sheu, "Ohmic contacts and reactive ion beam
etching for p-type GaN", J. Chinese Institute of Electrical
Engineering, Vol. 7, No. 3, pp. 203-210, August 2000 (EI, 574. C. Y. Su, S. L. Wu, S.
J. Chang, and L. P. Chen, "Strained Si1-xGex graded channel PMOSFET grown
by UHVCVD", Thin Solid Films, Vol. 369, No. 1-2, pp.
371-374, July 2000. 575. C. Y. Su, L. P.
Chen, S. J. Chang, G. W. Huang, Y. P. Ho, B. M. Tseng,
D. C. Lin, H. Y. Lee, J. F. Kuan, Y. M. Deng, C. L. Chen, L. Y. Leu, K. A.
Wen and C. Y. Chang, "Coplanar probe pad design on the noise figures of
0.35 mm
MOSFETs", Electron. Lett., Vol. 36, No. 15, pp. 1280-1281, July
2000. 576. Y. K. Su, W. R.
Chen, S. J. Chang, F. S. Juang, W. H. Lan, A. C. H. Lin and
H. Chang, "The red shift of ZnSSe metal-semiconductor-metal light
emitting diodes with high injection currents", IEEE Tran. Elec. Dev.,
Vol. 47, No. 7, pp. 1330-1333, July 2000. 577.
K. S. Ramaiah, V. S. Raja, A. K.
Bhatnagar, R. D. Tomlinson, R. D. Pilkington, A. E. Hill, S. J.
Chang, Y. K. Su and F. S. Juang, "Optical structural and
electrical properties of tin doped indium oxide thin films prepared by
spray-pyrolysis technique", Semicond. Sci. Technol., Vol. 15, No.
7, pp. 676-683, July 2000. (EI, 578.
C. Y. Su, S. L. Wu, S.
J. Chang and L. P. Chen, "Strained Si1-xGex normal graded channel P-type
metal-oxide-semiconductor field-effect-transistor" Jpn. J. Appl.
Phys. Lett., Vol. 39, No. 6B, pp. L279-L581, June 2000. 579. W. R. Chen, S.
J. Chang, Y. K. Su, W. H. Lan, A. C. H. Lin and H. Chang,
"Reactive Ion Etching of ZnSe, ZnSSe, ZnCdSSe and ZnMgSSe by CH4/H2/Ar
and CH4/Ar", Jpn. J. Appl. Phys., Vol. 39, No. 6A, pp.
3308-3314, June 2000. 580. S. J. Chang, Y.
K. Su, F. S. Juang, C. T. Lin, C. D. Chiang and Y. T. Cherng,
"Photo-enhanced native oxidation process for Hg0.8Cd0.2Te
photoconductors", IEEE J. Quantum
Electron., Vol. 36, No. 5, pp.
583-589, May 2000. 581.
F. S. Juang, Y. K. Su, S. M. Chang, S.
J. Chang, C. D. Chiang and Y. T. Cherng, "Analysis of the
dark current of focal-plane-array Hg1-xCdxTe
diode", Mater. Chem. Phys., Vol. 64, No. 2, pp. 131-136,
April 2000. 582.
C. M. Lin, S. J. Chang, M.
Yokoyama and I. N. Lin, "Effects of redox treatment on diamond-like
carbon coated Mo substrates", Jpn.
J. Appl. Phys. Lett., Vol. 39,
No. 2A, pp. L76-L78, February 2000. 583.
S. L. Wu and S. J. Chang,
"Si field-effect transistor with
doping dipole in buffer layer", Appl. Phys. Lett., Vol. 75, No. 18, pp. 2848-2850, November 1999.
, EI 584.
S. J. Chang, W. R. Chen, Y. K. Su, R. C. Tu, W. H. Lan and
H. Chang, "Ohmic contact to p-ZnSe and p-ZnMgSSe", Electron. Lett., Vol. 35, No. 15, pp.
1280-1281, July 1999. 585.
S. L. Wu and S. J. Chang,
"High performance delta-modulation-doped Si/SiGe heterostructure FET's
grown by MBE", Solid State Electron., Vol. 43, No. 7, pp.
1313-1316, July 1999. 586.
C. M. Lin, S. J. Chang, M. Yokoyama, I. N. Lin, F. Y. Chuang,
C. H. Tsai and W. C. Wang, "Enhancement
of electron emission characteristics of platform-shaped Mo emitters by
diamond-like carbon coatings", Jpn. J. Appl. Phys., Vol.
38, No. 6A, pp. 3700-3704, June 1999. 587.
S. J. Chang, Y. Z. Juang, D. K. Nayak and Y. Shiraki,
"Reactive ion etching of Si SiGe in CF4/Ar and Cl2/BCl3/Ar
discharges", Mater. Chem. Phys., Vol. 60, No. 1, pp. 22-27, July 1999. 588.
C. M. Lin, S. J. Chang, M. Yokoyama, F.
Y. Chuang, W. C. Wang and I. N. Lin, "Enhancement on diamondlike carbon coated planar electron field emission
array using Au-precoating", Appl. Surf. Sci., Vol.
142, No. 1-4, pp. 499-503, April 1999. 589.
F. S. Juang, Y. K. Su, S.
J. Chang, S. M.
Chang, F. S. Shu, C. D. Chiang, Y. T. Cherng and T. P. Sun, "Dark currents in HgCdTe photodiodes
passivated with ZnS/Cds", J. Electrochem. Soc., Vol. 146, No. 4: pp. 1540-1545,
April 1999. 590.
C. M. Lin, S. J. Chang, M. Yokoyama, F.
Y. Chuang,C. H. Tsai, W. C. Wang and I. N. Lin, "Electron field emission characteristics of planar field emission array
with diamondlike carbon electron emitters", Jpn. J. Appl.
Phys., Vol. 38, No. 2A, pp. 890-893, February 1999. 591.
S. L. Wu, T. T. Han, Y. P. Wang and S.
J. Chang, "An inverted boron d-doped high hole mobility
transistor (HHMT) with a Si0.4Ge0.6 quantum well",
J. Appl. Phys. Lett., Vol. 37, No.
11A, pp. L1290-L1292, November 1998. 592.
J. K. Sheu, Y. K. Su, S.
J. Chang, G. C. Chi, K. B. Lin, C. C. Liu and C. C. Chiou,
"Electrical derivative characteristics of ion implanted AlGaInP/GaInP
multi-quantum well lasers", Solid State Electron., Vol. 42, No. 10, pp. 1867-1869, October 1998. 593.
J. K. Sheu, Y. K. Su, S.
J. Chang, M. J. Jou and G. C. Chi, "Investigation of
wafer-bonded (AlxGa1-x)0.5In0.5P/GaP
light-emitting diodes", IEE Proc.
- Optoelectron., Vol. 145, No. 4, pp. 248-252, August 1998. 594.
Y. Z. Juang, Y. K. Su, S.
J. Chang, D. F. Huang and C. S. Chang "Reactive ion etching
for AlGaInP/GaInP laser structure", J.
Vac. Sci. Technol., Vol. A16, No. 4, pp. 2031-2036, July/August 1998. 595.
S. J. Chang and C. S.
Chang, "650nm AlGaInP/GaInP compressively strained multi-quantum well
light-emitting diodes", Jpn. J.
App. Phys. Lett., Vol. 37, No. 6A, pp. L653-L655, June 1998. 596.
S. J. Chang and C. S.
Chang, "AlGaInP compressively strained multi-quantum well light-emitting
diodes for polymer fiber applications", IEEE Photon. Techol. Lett., Vol. 10, No. 6, pp. 772-774, June
1998. 597.
S. J. Chang and C. S.
Chang, "642nm AlGaInP laser diodes with a tensile strain barrier cladding
layer", IEEE Photon. Techol. Lett.,
Vol. 10, No. 5, pp. 651-653, May 1998. 598.
Y. K. Su, W. L. Li, S.
J. Chang, C. S. Chang and C. Y. Tsai, "High performance
670nm AlGaInP/GaInP visible strained quantum well lasers", IEEE Tran. Electron. Dev., Vol. 45,
No. 4, pp. 763-767, April 1998. 599.
L. P. Chen, Y. C. Chan, S.
J. Chang, G. W. Huang and C. Y. Chang, "Direct oxidation of
Si1-xGex layers using vacuum-ultra-violet light
radiation in oxygen", Jpn. J.
Appl. Phys. Lett., Vol. 37, No. 2A, pp. L122-L124, February 1998. 600.
S. J. Chang, D. K. Nayak
and Y. Shiraki, "1.54�慆 electroluminescence from erbium doped SiGe light
emitting diodes", J. Appl. Phys.,
Vol. 83, No. 3, pp. 1426-1428, February 1998. 601.
R. C. Tu, Y. K. Su, D. Y. Yin, C. F.
Li, Y. S. Huang, W. H. Lan, S. L. Tu, S. J. Chang, S. C. Chou and
W. C. Chou, "Contactless electroluminescence study of strained Zn0.79Cd0.21Se/ZnSe
double quantum wells", J. Appl.
Phys., Vol. 83, No. 2, pp. 1043-1048, January 1998. 602.
C. S. Chang, Y. K. Su, S.
J. Chang, P. T. Chang, Y. R. Wu, K. H. Huang and T. P. Chen,
"High brightness AlGaInP 573nm light-emitting diode with a chirped
multi-quantum barrier", IEEE J.
Quan. Electon., Vol. 34, No. 1, pp. 77-83, January 1998. 603.
W. L. Li, Y. K. Su, S.
J. Chang, C. S. Chang and C. Y. Tsai, "Design of AlGaInP
visible lasers with a low vertical divergence angle", Solid State Electron., Vol. 42, No. 1,
pp. 87-90, January 1998. 604.
S. J. Chang, C. S. Chang,
Y. K. Su, P. T. Chang, Y. R. Wu, K. H. Huang and T. P. Chen, "AlGaInP
multi-quantum well light-emitting diodes", IEE Proceeding – Optoelectron., Vol. 144, No. 6, pp. 405-409,
December 1997. 605.
W. L. Li, Y. K. Su, S.
J. Chang and C. Y. Tsai, "A novel waveguide structure to
reduce beam dispersion and threshold current in GaInP/AlGaInP visible quantum
well lasers", Appl. Phys. Lett.,
Vol. 71, No. 16, pp. 2245-2247, October 1997. 606.
S. J. Chang, C. S. Chang,
Y. K. Su, P. T. Chang, Y. R. Wu, K. H. Huang and T. P. Chen, "AlGaInP
yellow-green light-emitting diodes with a tensile strain barrier cladding
layer", IEEE Photon. Techol. Lett.,
Vol. 9, No. 9, pp. 1191-1201, September 1997. 607.
C. T. Lin, Y. K. Su, S. J. Chang, H. T.
Huang, S. M. Chang and T. P. Sun, "Effects of passivation and extraction
trap density on the 1/f noise of HgCdTe photoconductive detector", IEEE Photon. Techol. Lett., Vol. 9,
No. 2, pp. 232-234, February 1997. 608.
S. J. Chang, C. S. Chang,
Y. K. Su, P. T. Chang, Y. R. Wu, K. H. Huang and T. P. Chen, "Chirped
GaAs/AlAs distributed Bragg reflectors for high brightness yellow-green
light-emitting diodes", IEEE
Photon. Techol. Lett., Vol. 9, No. 2, pp. 182-184, February 1997. 609.
S. J. Chang, Y. C. Yin, C.
M. Lin and A. Y. G. Fuh, "Relaxation time of polymer ball type PDLC
films", Liq. Cryst., Vol. 21,
No. 5, pp. 707-711, November 1996. 610.
S. J. Chang, J. K. Sheu, Y.
K. Su, M. J. Jou and G. C. Chi, "AlGaInP/GaP light emitting diodes
fabricated by direct bonding technology", Jpn. J. Appl. Phys., Vol. 35, No. 8, pp. 4199-4202, August 1996. 611.
S. J. Chang, C. M. Lin and
A. Y. G. Fuh, "Studies of polymer ball type polymer dispersed liquid
crystal films", Liq. Cryst.,
Vol. 21, No. 1, pp. 19-23, July 1996. 612.
C. T. Lin, Y. K. Su, H. T. Huang, S.
J. Chang, G. S. Chen, T. P. Sun and J. J. Luo, "Electrical
properties of the stacked ZnS/photo-enhanced-native-oxide passivation for
HgCdTe photodiodes", IEEE Photon.
Techol. Lett., Vol. 8, No. 5, pp. 676-678, May 1996. 613.
S. J. Chang, C. M. Lin and
A. Y. G. Fuh, "Effects of photoinitiator on the properties of polymer
ball type PDLC films", Jpn. J.
Appl. Phys., Vol. 35, No. 4A, pp. 2180-2183, April 1996. 614.
Y. K. Su, C. T. Lin, H. T. Huang, S.
J. Chang, T. P. Sun, G. S. Chen and J. J. Luo, "The
electrical properties of high quality stacked CdTe/photo-enhanced-native-oxide
for HgCdTe passivation", Jpn. J.
Appl. Phys., Vol. 35, No. 2B, pp. 1165-1167, February 1996. 615. C. T. Lin, S. J. Chang, D.
K. Nayak and Y. Shiraki, "The properties of SiO2 films using direct
photo chemical vapor deposition on strained SiGe layer", Appl. Surface Sci., Vol. 92, pp. 193-197, February 1996. 616. S. J. Chang,
"Neodymium-doped GaAs light emitting diodes", J. Appl. Phys., Vol. 78, No. 6, pp. 4279-4281, September 1995. 617. S. J. Chang, D. K. Nayak
and Y. Shiraki, "Photoluminescence of erbium implanted in SiGe", Jpn. J. Appl. Phys., Vol. 34, No.10,
pp. 5633-5636, October 1995. 618. A. Y. G. Fuh, C. Y. Huang, M. S. Tsai,
G. L. Lin and S. J. Chang, "Studies of polymer stabilized
cholesteric liquid crystal texture films", Chinese J. Phys., Vol. 33,
No. 3, pp. 291-302, June 1995. 619. H. Kuan, Y. K. Su, S. J. Chang and
W. J. Tzou, "Photoreflectance study of InP and GaAs by MOCVD using
tertiarybutylphosphine and tertiarybutylarsine source", Jpn. J. Appl. Phys., Vol. 34, No. 4A, pp. 1831-1832, April
1995. 620. C. T. Lin, S. J. Chang, D.
K. Nayak and Y. Shiraki, "Deposition of SiO2 layer on
strained SiGe substrate", Jpn. J.
Appl. Phys., Vol. 34, No. 1, pp.
72-74, January 1995. 621. S. J. Chang and S. Chiao,
"Effects of matrix impedance on the properties of polymer dispersed
liquid crystal cells", Jpn. J.
Appl. Phys., Vol. 34, No. 8A, pp,
4074-4078, August 1995. 622. S. J. Chang, Y. K. Su and
Y. P. Shei, "High quality ZnO thin films on InP substrates prepared by
RF magnetron sputtering (I) - Material study", J. Vac. Sci. Technol., Vol. A13, No. 2, pp. 381-384, March 1995. 623. S. J. Chang, Y. K. Su and
Y. P. Shei, "High quality ZnO thin films on InP substrates prepared by
RF magnetron sputtering (II) - Surface acoustic wave device
fabrication", J. Vac. Sci.
Technol., Vol. A13, No. 2, pp.
385-388, March 1995. 624. S. J. Chang, S. Chiao, W.
J. Lai, C. M. Lin and A. Y. G. Fuh, "Polymer dispersed liquid crystal
display device for projection high definition
television application", Macromolecular
Symposia, Vol. 84, No. 1, pp.
159-163, July 1994. 625. S. J. Chang and K. Takahei,
"Studies of GaAs:Er impact excited electroluminescence devices", Appl. Phys. Lett., Vol. 65, No. 4, pp. 433-435, July 1994. 626. J. D. Lin, Y. K. Su, S.
J. Chang, M. Yokoyama and F. Y. Juang, "Passivation with SiO2
on HgCdTe by direct photo-CVD", J.
Vac. Sci. Technol., Vol. A12, No.
1, pp. 7-11, January 1994. 627. S. J. Chang and K. Takahei,
"Optical properties of the dominant Nd center in GaP", J. Appl. Phys., Vol. 73, No. 2, pp. 943- 947, January
1993. 628. J. Nakata, S. J. Chang and
K. Takahei, "Direct evidence of Er atoms occupying an interstitial site
in metalorganic chemical vapor deposition-grown GaAs:Er", Appl. Phys. Lett., Vol. 61, No. 22, pp.
2665-2667, November 1992. 629. A. Taguchi, S. J. Chang and
K. Takahei, "Direct verification of energy back transfer from Yb
4f-shell to InP host", Appl. Phys.
Lett., Vo. 60, No. 8, pp. 965-967, February 1992. 630. S. J. Chang, H. Nakagome
and K. Takahei, "Luminescence lifetime studies of Nd-doped GaP and
GaAs", J. Lumin., Vol. 52, No. 5-6, pp. 251-257, June 1992. 631. P. M. Adams, R. C. Bowman, Jr., C. C.
Ahn, S. J. Chang, V. Arbet-Engels, M. A. Kallel and K. L.
Wang, "Structure characterization of GemSin
strained layer superlattices", J.
Appl. Phys., Vol. 71, No. 9, pp.
4305-4313, May 1992. 632. S. J. Chang, H. Nakagome
and K, Takahei, "Observation of luminescence from a highly concentrated
Nd center in GaP by direct optical excitation and comparison with Nd centers
excited under host excitation", Jpn.
J. Appl. Phys. 30 (1991) 3788 633. S. J. Chang, H. Nakagome
and K. Takahei, "Luminescence intensity and lifetime dependence on
temperature for Nd-doped GaP and GaAs", Appl. Phys. Lett., Vol.
58, No. 21, pp. 2390-2392, May 1991. 634. A. Bindal, K. L. Wang, S.
J. Chang and M. A. Kallel, "Major implantation induced
defects in conventional and rapid thermal annealed, silicon implanted
LEC-grown GaAs", J. Electrochem.
Soc., Vol. 138, No. 1, pp. 222-226, January 1991. 635. S. J. Chang, V. Arbet, K.
L. Wang, R. C. Bowman, Jr., P. M. Adams, D. Nayak and J. C. S. Woo,
"Studies of interdiffusion in GemSin strained
layer superlattices", J. Electron.
Mater., Vol. 19, pp. 125-130
1990. 636. V. Arbet, S. J. Chang and
K. L. Wang, "Investigation of GemSin strained
monolayer superlattices by Rheed, Raman and X-ray technology", Thin Solid Films, Vol. 183, pp. 57-63. December 1989. 637. S. J. Chang, C. F. Huang,
M. A. Kallel, K. L. Wang, R. C. Bowman, Jr. and P. M. Adams, "Study
of ultra-thin Ge/Si strain layer superlattices", J. Crystal Growth, Vol. 95,
No. 1-4, pp. 451-454, February 1989. 638. S. J. Chang, K. L. Wang, R.
C. Bowman, Jr. and P. M. Adams, "Interdiffusion in a symmetrically
strained Ge/Si superlattice", Appl.
Phys. Lett., Vol. 54, No. 13, pp.
1253-1255, March 1989. 639. A. Bindal, K. L. Wang, S.
J. Chang, M. A. Kallel and P. K. Chu, "A process simulation
model for silicon ion implantation in undoped LEC-grown GaAs", J. Electrochem. Soc., Vol. 136, No. 8, pp. 2414-2420, August
1989. 640. A, Bindal, K. L. Wang, S.
J. Chang, M. A. Kallel, O. M. Stafsudd, "On the nature of
silicon activation efficiency in LEC-grown GaAs by photoluminescence", J. Appl. Phys., Vol. 65, No. 3, pp. 1246-1252, February
1989. 641. S. J. Chang, C. F. Huang,
M. A. Kallel, K. L. Wang, R. C. Bowman, Jr. and P. M. Adams, "Growth and
characterization of Ge/Si strained layer superlattices", Appl. Phys. Lett., Vol. 53, No. 19. pp. 1835-1837, November
1988. 642. S. J. Chang, M. A. Kallel,
K. L. Wang, R. C. Bowman, Jr. and P. Chow, "Study of MBE-grown GexSi1-x/Si
layers by Raman scattering", J.
Appl. Phys., Vol. 64, No. 7, pp.
3634-3636, October 1988. B. International
Conference Invited and Plenary Talks 1.
S. J.
Chang, "GaN-based LEDs with air voids
prepared by laser scribing and chemical etching", SPIE Photonics West 2012, in San Francisco, USA 2.
S. J.
Chang, "Lasers used for the fabrication of LED chips",
IEEE 2011 Academic Symposium on
Optoelectronics & Microelectronics Technology (ASOMT 2011),
in Harbin, China 3.
S. J.
Chang, "Growth of ZnSe nanowires and
ZnSe-based mulitquantum disks prepared by molecular beam epitaxy", 4th IEEE International NanoElectronics
Conference 2011 (INEC 2011), in Taoyuan, Taiwan 4.
S. J.
Chang, "GaN-based LEDs with air voids
prepared by laser scribing and chemical etching", International Electron Devices and
Materials Symposium 2011 (IEDMS 2011), in
Taipei, Taiwan 5.
S. J.
Chang, "A β-Ga2O3
solar-blind photodetector prepared by furnace oxidization of GaN
thin film",
2010 International Conference on Optics and Photonics in
Taiwan (OPT2010), in Tainan, Taiwan 6.
S. J.
Chang, "Solar-blind β-Ga2O3
nanowire photodetectors",
IEEE 2010 Academic Symposium on
Optoelectronics & Microelectronics Technology (ASOMT2010),
in Harbin, China 7.
S. J.
Chang, "ZnO nanowires: Materials growth
and device applications", IUPAC 5th International Symposium on
Novel Materials and Synthesis (NMS-V 2009) in Shanghai, China 8.
S. J.
Chang, "The challenge of commercialized
crystalline Si solar cell", 2nd IEEE Electron System-Integration
Technology Conference (ESTC
2008), in Greenwich, London, UK 9.
S. J.
Chang, "GaN-based light emitting diodes
with micro/nano structure", 8th Emerging Information and
Technology Conference (EITC
2008), in Tainan, Taiwan 10.
S. J.
Chang, "High-brightness GaN-based light
emitting diodes", 2nd Advanced
Display and Optoelectronics
Technology Workshop
2008 (ADOT 2008), in Daegu, Korea 11.
S. J. Chang, "GaN-based
devices prepared on Si substrates",
IEEE 2008 Academic Symposium on
Optoelectronics & Microelectronics Technology (ASOMT2008),
in Harbin, China 12.
S. J. Chang, "ESD reliability of nitride-based LEDs", The 5th International
Workshop on Industrial Technologies for Optoelectronic Semiconductors
(IWITOS’07), in Seoul, Korea 13.
S. J. Chang, "ZnO nanowire-based
gas sensors", 7th Emerging Information and
Technology Conference (EITC 2007), in
Princeton, USA 14.
S. J. Chang, "GaN-based
metal-oxide-semiconductor heterostructure field effect transistors (MOSHFETs)", 6th Topical Workshop on Heterostructure Microelectronics
(TWHM 2005), in Awajishima Hyogo, Japan 15.
S. J. Chang, "Growth of
vertical ZnO-based nanowires on glass substrate", 2nd Asia-Pacific
Workshop on Widegap Semiconductors (APWS 2007), in Hsinchu, Taiwan 16.
S. J. Chang, "InGaN/GaN MQW LEDs with ITO-based transparent upper contact
layers", 5th International Symposium on Blue Lasers
and LEDs (ISBLLED2004), in Gyeongju, Korea 17.
S. J. Chang and S. L. Wu, "Si1-xGex
channel field effect transistors using d doping technique", First International Workshop on New Group
IV (Si-Ge-C) Semiconductors 2001, in Kofu, Japan, 2001 18.
S. J. Chang,
"Strained Si1-xGex graded channel PMOSFET grown by
UHV/CVD", International Joint Conf. on Silicon Epitaxy and
Heterostructure 1999, in Zao,
Japan C. Patents: 1.
Y. H. Wang, M. P.
Hong, Y. K. Su, S. J. Chang, H. R. Wu and J. Y. Wu, "Fabrication method for GaN MOSFETs", ROC patent No. 169680 (2003) 2.
Y. K. Su, C. H.
Chen, S. J. Chang and J. K. Sheu, "Structure of GaN MSM UV photodetector and its
fabrication method", ROC patent
No. 169681 (2002) 3.
F. S. Juang, Y. K. Su and S. J. Chang, "A modified suceptor structure for epitaxial
wafers", ROC patent No. 186781
(2002) 4.
S.
J. Chang, Y. K. Su and W. R.
Chen, "Ohmic contact structure of II-VI semiconductor and its
fabrication process", US patent
No. 6469319B1 (2002) 5.
F. S. Juang, Y. K. Su and S. J. Chang, "A modified water cooled gas nozzle", ROC patent No. 180792 (2002) 6.
Y. K. Su, C. T. Lin, S. J. Chang, H.
T. Huang, S. M. Chang and T. P. Sun, "Low noise HgCdTe FIR photodetector
and its fabrication method", ROC
patent No. 120926 (2001) 7.
Y. K. Su, S. J. Chang and W. R. Chen,
"Ohmic contact structure of II-VI semiconductor and its fabrication
method", ROC patent No. 132585
(2001) 8.
Y. K. Su, S. M. Chen, S. J. Chang
and C. L. Lin, "Fabrication of InAs and GaSb related photo-detectors,
laser diodes and NDR devices by MOCVD, ROC patent No. 104113 (1999) 9.
Y. K. Su, W. L. Li, S. J. Chang
and C. Y. Tsai, "Design of passive waveguide for minimization of
transverse beam dispersion in GaInP/AlGaInP visible quantum well
lasers", ROC patent No. 101681 (1999) 10.
Y. K. Su, W. L. Li, S. J. Chang
and C. Y. Tsai, "Red semiconductor laser of low beam divergence", US
patent No. 5923689 (1999) 11.
Y. K. Su, C. Y. Tsai and S. J. Chang,
"A new high efficiency NIP GaInP solar cell", US patent No. 5911839
(1999) 12.
C. Y. Tsai, Y. K. Su and S. J. Chang,
"A new high efficiency NIP GaInP solar cell", ROC patent No.
130666 (1998) 13.
A. Taguchi, K.
Takahei and S. J. Chang, "Quantum well
structure", Japanese Patent No. H3
194770 (1991) 13.
K. Takahei, H. Nakagome, A. Taguchi and S.
J. Chang, "Crystals with impurities and their manufacturing
methods", Japanese Patent No. H2-288659 (1990)
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A.
National Science Council Projects
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A.
Students 1.
Sheng-Po Chang (Ph.D) , Chin-Hung Haiso (Ph.D) 2.
Po-Chang Chen (Ph.D 95) 3. Wei-Cheng Ting (Ph.D 98),
Yu-Chun Mai (Ph.D 98) 4.
Jian-Min Li(Ph.D 99), Huei-Cyuan Hong(Ph.D 99), Jhong-Syun Chang(Ph.D 99), Guang-Wei Liou(Ph.D 99) 5.
Bo-Cin Huang( Ph.D 100), Da-Gang Luo
(Ph.D100), Chong-Ming Huang (Ph.D 100) 6.
Po-Sheng Wang(Ph.D 101), Hong-Ming Chang(Ph.D 101), Chun-Te Wu, Te-Shan Kuo(Ph.D
101), WEI-YU CHEN(Ph.D 101), HAN-TING HSUEH (Ph.D 101), CHENG-FU YU(Ph.D 101), YU-YAO LIN(Ph.D 101) 7.
Tsung-Hsun Chiang(Ph.D 102), CHENG-TA HUANG(Ph.D 102), CHIU-JUNG CHIU(Ph.D 102),
HUANG-YU CHEN(Ph.D 102), PO-CHING WANG(Ph.D 102), CHIH-HUNG LI(Ph.D 102),
CHANG-CHIEN WENG(Ph.D 102), CHENG-HSIUNG YEN(Ph.D 102), HAN-CHUNG LIAO(Ph.D 102),
NAN-MING LIN(Ph.D 102) 8.
MING-HSIEN WU(Ph.D 103), CHEN, TSE-FU(Ph.D 103), CHIEH-LI HOU(Ph.D 103),
CHUNG-YING CHANG, LI-MING CHANG(Ph.D 103), CHIA-MAO CHEN(Ph.D 103), CHIH-JEN
HSIAO(Ph.D 103), TSUNG-YING TSAI(Ph.D 103), HSU-FENG
TSENG(Ph.D 103), TSUNG-WEI LIU(Ph.D 103) 9.
PEI-YU LI(Ph.D 104), HSIU-YI LIN(Ph.D 103),
CHIH-HAO LIN(Ph.D 103), CHING-YING WU(Ph.D 103), MENG-JU WU(Ph.D 103),
SHIH-HSIANG CHEN(Ph.D 103), CHUN-PO YANG(Ph.D 103), YA-LING WU(Ph.D 103),
CHING-YAO CHAN(Ph.D 103), CHAO-JEN HO(Ph.D 103) 10. Chun Jung Chang(MS 101),
TING-HAO CHANG(MS 101), KUAN-YU CHEN(MS 101), Jeng-Shian
Zeng(MS 101), Wei-Kang Hsieh(MS 101), Hsiao-Tang Su(MS 101), San-Syong
Shih(MS 101) 11. Yuan-Fu Hua(MS 102), Sin-Hui
Wang(MS 102), Chih-Wei Li(MS 102), Kuo-Po Jui(MS 102), WEI-CHIH HUANG(MS
102), Tsung-Han Yang(MS 102), Bi-Guei Duan(MS 102), Shin Liu (MS 102) |
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