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A.
Refereed Papers (1)
W.
C. Liu,
C. Y. Chang, W. C. Hsu, Y. K. Fang, B. S. Wu, and R. C. Liu, “The V-groove technique
in the fabrication of high-voltage junction device,” Int. J. Electronics,
vol. 55, no. 3, pp. 417-424, 1983. (EI) (2)
C. Y. Chang, W. C. Hsu, C. M. Uang, Y .K. Fang, W. C. Liu, “A simple and low
cost personal computer-based automatic deep level transient spectroscopy
system for semiconductor devices analysis,” IEEE. Trans. Instrum. Meas., (3)
C. Y. Chang, W. C. Hsu, C. M. Uang, Y. K. Fang, W. C. Liu, and B. S. Wu, “Personal computer-based automatic
measurement system applicable to deep-level transient spectroscopy,” Rev. Sci. Instrum., vol. 55, no. 4,
pp. 637-639, 1984. (EI) (4)
C. Y. Chang, Y. H. Wang, W. C. Liu, and S. A. Liao, “Temperature-dependent
characteristics of MBE-grown GaAs p+-v-p+-v-n+
regenerative switching device,” Electron.
Lett., vol. 21, no. 1, pp. 24-25, 1985. (EI) (5)
C. Y. Chang, Y. H. Wang, W. C. Liu, and S. A. Liao, K. Y. Cheng, “MBE grown
circular U-groove barrier transistor,”
Appl. Phys. Lett., vol. 46, pp. 1084-1086, 1985. (6)
C. Y. Chang, Y. H. Wang, W. C. Liu, and S. A. Liao, “MBE grown n+-i-(p+)-i-n+
GaAs V-groove barrier transistor,” IEEE
Electron Device Lett., vol. 6, no. 3, pp. 123-125, 1985. (EI) (7)
Y. H. Wang, W.
C. Liu, S. A. Liao, K. Y. Cheng, and C. Y. Chang, “On the surface defects
of MBE-grown GaAs layers,” Jpn. J.
Appl. Phys., vol. 24, no. 5, pp. 628-629, 1985. (EI) (8)
W.
C. Liu, Y. H. Wang, C. Y. Chang, and S. A. Liao,
April, “GaAs n-i-p-i-n barrier transistor with ultra-thin p AlGaAs base
prepared by molecular beam epitaxy,” IEE
Proc. (I), vol. 133, no. 2, pp. 47-48, 1986. (EI, SCI) (9)
Y. H. Wang, W.
C. Liu, C. Y. Chang, and S. A. Liao, Jan/Feb, “Surface morphologies
of GaAs layers grown by arsenic-pressure-controlled molecular beam epitaxy,” J. Vac. Sci. Technol. B, vol. 4, no.
1, pp. 30-36, 1986. (EI, SCI) (10)
C. Y. Chang, W. C. Liu, M. S. Jame, Y. H. Wang, S. Luryi, and S. M.
Sze, “Induced base transistor grown by molecular beam epitaxy,” IEEE Electron Device Lett., vol.7, pp.
497-499, 1986. (11)
W.
C. Liu, W. C. Hsu, W. S. Lour, R. L. Wang, and C. Y.
Chang, “MBE grown undoped superlattice gate and modulation-doped buffer
structure for power FET applications,” Jpn.
J. Appl. Phys., vol. 28, no. 6, pp. L904-906, 1989. (EI, SCI) (12)
W.
C. Liu, W. S. Lour, and C. Y. Chang, “Application of superlattice
gate and modulation-doped buffer for GaAs power MESFET grown by MBE,” Appl. Phys. A- Solids & Surface,
vol. 49, no. 3, pp. 321-324, 1989.
(EI, SCI) (13)
W.
C. Liu, C. Y. Chang, W. C. Hsu, W. S. Lour, and R. L.
Wang, “Superlattice gate and graded superlattice buffer for microwave power
MESFET grown by MBE,” J. Vac. Sci.
Technol. B, vol. 7, no. 4, pp. 589-592, 1989. (SCI) (14) W. C. Liu,
R. L. Wang, W. S. Lour, C. Y. Sun, and C. C. Hong, “Electronic transport in
graded-period delta-doped superlattice,”
Jpn. J. Appl. Phys., vol.
29, no. 1, pp. L7-L9, 1990. (EI, SCI) (15)
W.
C. Liu, “Investigation of electrical and
photoluminescent properties of MBE-grown AlxGa1-xAs
layers,” J. Mat. Sci., vol. 25, no.
3, pp. 1765-1772, 1990. (EI, SCI) (16)
W.
C. Liu, W. S. Lour, C. Y. Sun, R. L. Wang, and W. C.
Hsu, “A study on beryllium-doped AlxGa1-xAs layers
grown by molecular beam epitaxy,” Mat.
Sci. & Eng., vol. 6, no. 1, pp. 43-48, 1990. (EI, SCI) (17)
W.
C. Liu, W. S. Lour, and C. Y. Sun, “GaAs power
metal-insulator-semiconduction field effect transistor with superlattice and
superlattice buffer structure,” Thin
Solid Films, vol. 188, no. 2, pp. 213-218, 1990. (EI, SCI) (18)
Wen-Chau
Liu and
Wen-Shiung Lour, “Power MISFETs fabricated with superlatticed gate
“Insulators” and transition buffer layers,” Solid-State Electron., vol. 33, no. 8, pp. 1019-1024, 1990. (EI, SCI) (19)
Wen-Chau
Liu, Ching-Hsi
Lin, Chung-Yih Sun and Wen-Shiung Lour, “S-shaped negative differential
resistance in a single GaAs quantum-well switching device,” Jpn. J. Appl. Phys., vol. 29, no. 8,
pp. L1385-1387, 1990. (EI, SCI) (20)
W.
C. Liu, W. S. Lour, C. Y. Sun, and H. R.Chen, “A novel
very high breakdown voltage FET prepared by molecular beam epitaxy,” Thin Solid Films, vol. 195, no. 1-2,
pp. 1-6, 1991. (EI, SCI) (21)
Wen-Chau
Liu,
“Three-terminal voltage-controlled GaAs quantum well switching device,” Solid-State Electron., vol. 34, no. 2,
pp. 163-166, 1991. (EI, SCI)
(NSC-79-0404-E006-10) (22)
Wen-Chau
Liu, Chung-Yih Sun, and Wen-Shiung Lour,
“Characteristics of the GaAs monolayer-doped structure and its applications
for power field- effect transistor fabrication,” Mat. Sci. & Eng., vol. 7, no. 4, pp. 275-281, 1991. (EI, SCI) (23)
Wen-Chau
Liu and Wen-Shiung Lour, “Influence of the potential
spike on heterostructure-emitter bipolar transistor,” J. Appl. Phys., vol. 69, no. 2, pp. 1063-1066, 1991. (SCI) (24)
Wen-Chau
Liu, Chung-Yih
Sun,and Wen-Shiung Lour, “Investigation on electronic properties of
semiconductor delta-doped structure,” Superlatt.
Microstruct., vol. 10, no. 1, pp. 19-26, 1991. (EI, SCI) (25)
Wen-Chau
Liu and
Wen-Shiung Lour, “AlGaAs/GaAs heterostructure-emitter bipolar transistor
(HEBT) prepared by molecular beam epitaxy,” Solid-State Electron., vol. 34, no. 7, pp. 717-722, 1991. (EI, SCI) (26)
Wen-Chau
Liu, Ching-Hsi
Lin, Yeong-Shyang Lee, and Der-Feng Guo, “GaAs quantum well negative
differential resistance device prepared by molecular beam epitaxy,” J. Vac. Sci. Technol. B, vol. 9, no.
2, pp. 243-248, 1991. (SCI) (27)
Wen-Chau
Liu and
Chung-Yih Sun, “Properties of sawtooth doping superlattice with different
delta-doped density,” Jpn. J. Appl.
Phys., vol. 30, no. 4, pp. 635-636, 1991. (EI, SCI) (28)
W.
C. Liu, C. Y. Sun, and W. S. Lour, “Observation of
multi-state negative differential conductivity in periodic delta-doped superlattice,” IEE Proc. (G), vol. 138, no. 3, pp.
424-426, 1991. (EI, SCI) (29) Wen-Shiung
Lour and Wen-Chau Liu, “Negative-differential-
resistance (NDR) superlattice-emitter transistor,” Jpn. J. Appl. Phys., vol.
30, no. (30) Wen-Chau
Liu and Wen-Shiung Lour, “Applications of
transition-emitter superlattice to biploar transistor,” Jpn. J. Appl. Phys., vol.
30, no. (31)
Wen-Chau
Liu and
Wen-Shiung Lour, “A new functional, resonant-tunneling bipolar transistor
with a superlattice emitter,” J. Appl.
Phys., vol. 70, no. 1, pp. 485-489, 1991. (SCI) (32)
Wen-Chau
Liu and Wen-Shiung Lour, “Temperature-dependence of
double negative differential resistance of superlattice-emitter transistor,” Solid-State Electron., vol. 34, no. 8,
pp. 921-924, 1991. (EI, SCI) (33)
W.
C. Liu, C. Y. Sun, and W. S. Lour, “Characteristics of
the GaAs graded-period delta-doped superlattice,” IEE. Proc. (G), vol. 138, no. 6, pp. 629-632, 1991. (EI, SCI) (34)
Wen-Chau
Liu, Der-Feng
Guo, and Yeong-Shyang Lee, “A confinement-collector GaAs switching decvice
prepared by molecular beam epitaxy,” Jpn.
J. Appl. Phys., vol. 30, no. (35)
Wen-Chau
Liu,
Yeong-Shyang Lee, and Der-Feng Guo, “A new resonant-tunneling bipolar transistor
with triple-well emitter structure,” Solid-State
Electron., vol. 34, no. 12, pp. 1457-1459, 1991. (SCI) (36) Wen-Chau
Liu and
Chung-Yih Sun, “Electronic transport characteristics in GaAs
double-sawtooth-doping superlattice structure,” Jpn. J. Appl. Phys., vol.
30, no. 8B, pp. L1519-L1521, 1991.
(EI, SCI) (37)
Wen-Chau
Liu and
Wen-Shiung Lour, “An improved heterostructure-emitter bipolar transistor
(HEBT),” IEEE. Electron Device Lett.,
vol. 12, no. 9, pp. 474-476, 1991.
(EI, SCI) (38)
Wen-Chau
Liu and
Chung-Yih Sun, “A new GaAs n+-p-d(n+)-i-d(p+)-i-n+
switching device grown by molecular beam epitaxy,” IEE Electron Lett., vol. 27, no. 19, pp. 1704-1706, 1991. (EI, SCI) (39)
Wen-Chau
Liu, Der-Feng Guo,
Chung-Yih Sun, and Wen-Shiung Lour, “Morphological defects on Be-doped AlGaAs
layers grown by MBE,” J. Cryst. Growth,
vol. 114, no. 4, pp. 700-706, 1991.
(EI, SCI) (40)
Chung-Yih Sun and Wen-Chau Liu,
“Properties of p-GaAs/Sawtooth Doping superlattice/n+-GaAs
Structure Prepared by Molecular Beam Epitaxy”, Appl. Phys. Lett., vol. 59, no. 22, pp. 2823-2825, 1991. (SCI) (41)
Wen-Shiung Lour, Wen-Chau Liu and Yeong-Her Wang, “Investigation of
hetrostructure-confinement-emitter transistors,” Solid-State Electron., vol. 35, no. 2, pp. 117-124, 1992. (SCI) (42)
Wen-Chau
Liu and Der-Feng Guo, “A new GaAs switching device
with double-confinement-collector structure,” Solid-State Electron., vol. 35, no. 4, pp. 501-504, 1992. (EI, SCI) (43)
Wen-Chau
Liu, Wen-Shiung Lour, and Der-FengGuo, “New
AlGaAs/GaAs double hetrostructure-emitter bipolar transistor prepared by
molecular beam epitaxy,” Appl. Phys.
Lett., vol. 60, no. 3, pp. 362-364, 1992. (EI, SCI) (44)
Wen-Chau
Liu, Chung-Yih Sun, Wen-Shiung Lour, and Der-Feng
Guo, “Application of sawtooth doping superlattice for
negative-differential-resistance devices fabrication,” J. Vac. Sci. Technol. B, vol. 10, no. 1, pp. 60-66, 1992. (EI, SCI) (45)
Chung-Yih Sun and Wen-Chau Liu, “A new GaAs bipolar transistor with a
doping-superlattice collector,” Solid-State
Electron., vol. 35, no. 6, pp. 751-757, 1992. (EI, SCI) (46)
Wen-Shiung Lour, Wen-Chau Liu, Der-Feng Guo, and Rong-Chau Liu, “Modeling
the DC performance of hetrostructure-emitter bipolar transistor,” Jpn. J. Appl. phys., vol. 31, no. 8,
pp. 2388-2393, 1992. (EI, SCI) (47)
Wen-Chau
Liu, Wen-Shiung Lour, and Yeong-Her Wang,
“Investigation of AlGaAs/GaAs superlattice-emitter resonant-tunneling bipolar
transistor (SE-RTBT),” IEEE Trans.
Electron Device, vol. 39, no. 10, pp. 2214-2219, 1992. (SCI) (48)
Wen-Chau
Liu, Chung-Yih Sun, and Der-Feng Guo, “Regenerative
switching properties of a sawtooth-doping-superlattice-collector bipolar
transistor,” Appl. Phys. Lett.,
vol. 61, no. 4, pp. 471-473, 1992.
(EI, SCI) (49)
Chung-Yih Sun and Wen-Chau Liu, “A new GaAs sawtooth-doping-superlattice
switching device,” J. Appl. Phys.,
vol. 72, no. 4, pp. 1616-1620, 1992.
(EI, SCI) (50)
Wen-Chau
Liu, Der-Feng Guo, and Wen-Shiung Lour,
“Application of an emitter-edge thinning technique to GaAs/AlGaAs double
hetrostructure-emitter bipolar transistor,” Appl. Phys. Lett., vol. 61, no. 12, pp. 1441-1443, 1992. (SCI) (51)
Wen-Chau
Liu, Der-Feng Guo, and Wen-Shiung Lour,
“AlGaAs/GaAs double hetrostructure-emitter bipolar transistor (DHEBT),” IEEE Trans. Electron Device, vol. 39,
no. 12, pp. 2740-2744, 1992. (EI, SCI) (52)
Der-Feng Guo, Wen-Chau Liu, Wen-Shiung Lour, Chung-Yih Sun, and
Rong-Chau Liu, “Application of a triple-well superlattice-emitter structure
to GaAs switching device,” J. Appl.
Phys., vol. 72, no. 9, pp. 4414-4416, 1992. (EI, SCI) (53)
Wen-Shiung Lour, Wen-Chau Liu, Chung-Yih Sun, Der-Feng Guo, and Rong-Chau
Liu, “Multi-State superlattice-emitter resonant-tunneling bipolar transistor
with circuit applications,” Superlatt.
Microstruct., vol. 13, no. 1, pp.
81-86, 1993. (SCI) (54)
Chung-Yih Sun, Wen-Chau Liu, Der-Feng Guo, Wen-Shiung Lour, and Rong-Chau
Liu, “Fabrication of heterostructure-emitter bipolar transistor with a
doping-superlattice collector,” Superlatt.
Microstruct., vol. 13, no. 1, pp.
75-79, 1993. (SCI) (55)
Wen-Chau
Liu, Chung-Yih Sun, Der-Feng Guo, and Rong-Chau
Liu, “Perpendicular transport
properties of p-GaAs/d-doped
superlattice/n+-GaAs structure,” IEE Proc. (G), vol. 140, no. 2, pp. 81-84, 1993. (EI, SCI) (56)
Wen-Chau
Liu, Chung-Yih Sun, Wei-Chou Hsu, and Der-Feng Guo,
“Application of doping-superlattice collector structure for GaAs bipolar
transistor,” Jpn. J. Appl. Phys.,
vol. 32, no. 4, pp. 1575-1582, 1993.
(EI, SCI) (57)
Wei-Chou Hsu, Der-Feng Guo, Wen-Chau Liu, and Wen-Shiung Lour, “A tristate device
with double delta-doped quantum well structure,” Solid-State Electron., vol. 36, no. 8, pp. 1089-1092, 1993. (EI, SCI) (58)
Wei-Chou Hsu, Wen-Chau Liu, Der-Feng Guo, and Wen-Shiung Lour,
“GaAs-InGaAs double delta-doped quantum-well switching device prepared by
molecular beam epitaxy,” Appl. Phys.
Lett., vol. 62, no. 13, pp. 1504-1506, 1993. (SCI) (59)
Wei-Chou Hsu, Der-Feng Guo, Wen-Chau Liu, and Wen-Shiung Lour, “Characteristics of a GaAs-inGaAs
delta-doped quantum-well switch,” J.
Appl. Phys., vol. 73, no. 15, pp. 8615-8617, 1993. (SCI) (60) Der-Feng
Guo, Wen-Chen Yeou, Wen-Shiung Lour, Wei-Chou Hsu, and Wen-Chau Liu, “Regenerative switching phenomenon of a GaAs
metal-n-d(p+)-n-n+
structure,” Jpn. J. Appl. Phys., vol. 32, no. 7B, pp. L1011-L1013, 1993. (EI, SCI) (61)
Der-Feng Guo, Shiuh-Ren Yih, Jing-Tong Liang and
Wen-Chau Liu,
“Characteristics of a GaAs Metal-n+-n-d(p+)-n-n+
Switch,” Solid-State Electron.,
vol. 37, no. 2, pp. 223-229, 1994.
(EI, SCI) (62)
Wen-Chau
Liu, Der-Feng Guo, Shiuh-Ren Yih, Jing-Tong Liang, Lih-Wen
Laih, and Gau-ming Lyuu, “GaAs-InGaAs quantum-well resonant-tunneling
switching device grown by molecular beam epitaxy,” Appl. Phys. Lett., vol. 64, no. 20, pp. 2685-2687, 1994. (EI, SCI) (63)
C. L. Wu, W. C. Hsu, H. M. Shieh, and W. C. Liu, “Mobility Enhancement
in Double d-Doped
GaAs/InXGa1-XAs/GaAs Pseudomorphic Structure by Grading
the Heterointerfaces,” Appl. Phys.
Lett., vol. 64, no. 22, pp. 3027-3029, 1994. (EI, SCI) (64)
Wen-Chau
Liu, Wei-Chou Hsu, Lih-Wen Laih, and Jung-Hui Tsai,
“Performance enhancement in a metal-insulator-semiconductor-like
pseudomorphic transistor by utilizing an n--GaAs/n+-In0.2Ga0.8As
two-layer structure,” Appl. Phys. Lett.,
vol. 66, no. 12, pp. 1524-1526, 1995.
(EI, SCI) (65)
Der-Feng Guo, Lih-Wen Laih, Jung-Hui Tsai, Wen-Chau Liu, and Wei-Chou
Hsu, “Characteristics of a GaAs-InGaAs quantum-well resonant-tunneling
switch,” J. Appl. Phys., vol. 77,
no. 6, pp. 2782-2785, 1995. (EI, SCI) (66) M.
J. Kao, W. C. Hsu, H. M. Shieh, W.
C. Liu, and C. Y. Chang, “High carrier density in GaAs/InGaAs/GaAs
double delta-doped channels heterostructure,” Jpn. J. Appl. Phys., vol.
34, no. (67)
Y. H. Wu, J. S. Su, W. C. Hsu, W. Lin, and W. C. Liu, “Characteristics of
In0.53Ga0.47As/InP double and single
heterojunction-emitter bipolar transistors grown by LP-MOCVD,” Solid-State Electron., vol. 38, no. 4,
pp. 767-769, 1995. (EI, SCI) (68)
Y. H. Wu, J. S. Su, W. C. Hsu, W. C. Liu, and W. Lin, “A new
InP-based hetrojunction bipolar transistor utilizing an In0.53Al0.22Ga0.25As
base,” Appl. Phys. Lett., vol. 66,
no. 6, pp. 347-348, 1995. (EI, SCI) (69)
Y. H. Wu, J. S. Su, W. C. Hsu, W. Lin, and W. C. Liu, “Electrical
characteristic of a lattice-matched In0.53Al0.22Ga0.25As/InP
heterojunction bipolar transistor with zero potential spike at emitter-base
heterojunction,” Solid-State Electron.,
vol. 38, no. 4, pp. 1755-1757, 1995.
(EI, SCI) (70)
Wei-Chou Hsu, Chang-Luen Wu, Ming-Shang Tsai,
Chau-Yen Chang, Wen-Chau Liu,
and Hir-Ming Shied, “Characterization of high performance inverted
delta-modulation-doped (IDMD) GaAs/InGaAs pseudomorphic heterostructure
FET‘s,” IEEE Trans. Electron Device,
vol. 42, no. 5, pp. 804-809, 1995.
(EI, SCI) (71)
Wen-Chau
Liu, Lih-Wen Laih, Jung-Hui Tsai, Wei-Chou Hsu,
Cheng-Zu Wu, and Hong-Beng Thei, “Observation of the anomalous
current-voltage characteristics of GaAs/n+-InGaAs/GaAs
doped-channel structure,” Appl. Phys.
Lett., vol. 67, no. 3, pp. 404-406, 1995. (EI, SCI) (72)
Lih-Wen Laih, Jung-Hui Tsai, Wen-Chau Liu, Wei-Chou Hsu,
and Wen-Shiung Lour, “Investigation of an InGaAs-GaAs doped-channel MIS-like
pseudomorphic transistor,” Solid-State
Electron., vol. 38, no. 10, pp. 1747-1753, 1995. (EI, SCI) (73) Wen-Shiung
Lour, Wen-Chau Liu,
Jung-Hui Tsai, and Lih-Wen Laih, “High-performance camel-gate field effect
transistor using high-medium-low doped structure,” Appl. Phys. Lett., vol. 67, no. 18, pp. 2636-2638, 1995. (EI, SCI) (NSC-83-0404-E-006-016) (74)
Wen-Chau Liu, Jung-Hui Tsai, Lih-Wen Laih, Cheng-Zu Wu, Kong-Beng Thei, Wen-Shiung
Lour, and Der-Feng Guo, “Heterostructure confinement effect on the
negative-differential-resistance (NDR) bipolar transistor,” Superlattices and Microstructures, vol. 17, no. 4, pp. 445-456, 1995. (EI, SCI) (75)
Yu-Huei Wu, Jan-Shing Sue, Wei-Chou Hsu, Wei
Lin, Wen-Chau Liu, Ming-Jer
Kao and Rong-Tay Hsu, “Emitter edge-thinning effect on InGaAs/InP
double-heterostructure-emitter bipolar transistor,” Jpn. J. Appl. Phys. vol. 34, no. 11, pp. 5908-5911, 1995. (EI, SCI) (76)
Wen-Chau
Liu, Jung-Hui Tasi, Wen-Shiung Lour, Lih-Wen Laih,
Kong-BengThei, and Cheng-Zu Wu, “Multiple negative-differential-resistance
(NDR) of InGaP/GaAs heterostructure-emitter bipolar trasistor (HEBT),” IEEE Electron Device Lett., vol. 17, no. 3, pp. 130-132, 1996. (EI, SCI) (77)
Wen-Shiung Lour, Jung-Hui Tasi, Wen-Chau Liu, and Lih-Wen
Laih, “Influence of channel doping-profile on camel-gate field-effect
transistor,” IEEE Trans. Electron
Devices, vol. 43, no. 6, pp. 871-876, 1996. (EI, SCI) (78)
Wen-Shiung Lour, Wen-Chau Liu, Jung-Hui Tasi, and Lih-Wen Laih, “Device
linearity improvement and current enhancement utilizing high-to-low
doped-channel FET‘s,” Superlatt.
Microstruct., vol. 20,
no. 1, pp. 15-23, 1996. (EI, SCI) (79)
Jung-Hui Tsai, Wen-Shiung Lour, Lih-Wen Laih,
Rong-Chau Liu, and Wen-Chau Liu,
“Characteristics of camel-gate structures with active doping channel
profiles,” Solid-State Electron.,
vol. 39, no. 3, pp. 343-347, 1996. (EI,
SCI) (80)
Lih-Wen Laih, Wen-Chau Liu, Jung-Hui Tasi, Wei-Chou Hsu, Yuan-Tzu Ting,
and Rong-Chau Liu, “Anomalous negative-differential-resistance (NDR)
characteristics of n+-GaAs/n--GaAs/n+-In0.2Ga0.8As/i-GaAs
structure,” Superlatt. Microstruct.,
vol. 20, no. 1, pp. 7-13, 1996. (EI,
SCI) (81)
Kong-Beng Thei, Jung-Hui Tasi, Wen-Chau Liu, and Wen-Shiung
Lour, “Characteristics of functional heterostructure-emitter bipolar
transistor (HEBTs),” Solid-State
Electron., vol. 39, no. 8, pp. 1137-1142, 1996. (EI, SCI) (82)
Cheng-Zu Wu, Lih-Wen Laih, and Wen-Chau Liu, “Study of
InGaAs/GaAs metal-insulator-semiconductor-like heterostructure field-effect
transistor,” Solid-State Electron.,
vol. 39, no. 6, pp. 791-795, 1996. (EI,
SCI) (83)
Wen-Chau
Liu, Lih-Wen Laih, Wen-Shiung Lour, Jung-Hui Tsai,
Kun-Wei Lin, and Chin-Chau Cheng, “Multiple-route current-voltage (I-V)
characteristics of GaAs-InGaAs metal-insulator semiconductor-like (MIS)
structure for multiple-valued logic applications,” IEEE J. Quantum Electron., vol. 32, no. 9, pp. 1615-1619, 1996. (EI, SCI) (84)
Jung-Hui Tsai, Lih-Wen Laih, Hui-Jung Shih, Wen-Chau Liu, and Hao-Hsiung
Lin, “On the recombination currents effect of heterostructure-emitter bipolar
transistors (HEBTs),” Solid-State
Electron., vol. 39, no.
12, pp. 1723-1730, 1996. (EI, SCI) (85)
Jung-Hui Tsai, Shiou-Ying Cheng, Lih-Wen Laih,
and Wen-Chau Liu,
“AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base
transistor (HEHBT),” Electron. Lett.,
vol. 32, no. 18, pp. 1720-1721, 1996.
(EI, SCI) (86)
Lih-Wen Laih, Jung-Hui Tsai, Cheng-Zu Wu,
Kun-Wei Lin, Chin-Chuan Cheng, and Wen-Chau
Liu, “Pseudomorphic step-doped-channels field-effect transistor
(SDCFET),” Electron. Lett., vol.
32, no. 15, pp. 1418-1419, 1996. (EI,
SCI) (87)
Lih-Wen Laih, Cheng-Zu Wu, Shiou-Ying Cheng,
Jung-Hui Tsai, and Wen-Chau Liu,
“Anomalous negative-differential-resistance (NDR) characteristics of step-doped-channel
transistor (SDCT),” Electron. Lett.,
vol. 32, no. 21, p.2014-2015, 1996.
(EI, SCI) (88)
Der-Feng Guo, Chin-Chuan Chang, Kun-Wei Lin, Wen-Chau Liu, and Wei Lin, “A
multiple-negative-differential-resistance switch with double InGaP barriers,”
Appl. Phys. Lett., vol. 69, no. 27,
pp. 4185-4187, 1996. (EI, SCI) (89)
Lih-Wen Laih, Wen-Shiung Lour, Jung-Hui Tsai, Wen-Chau Liu, Cheng-Zu Wu,
Kong-Beng Thei, and Rong-Chau Liu, “Characteristics of
metal-insulated-semiconductor (MIS) like In0.2Ga0.8As/GaAs
doped-channel structure,” Solid-State
Electron., vol. 39, no. 1, pp. 15-20, 1996. (EI, SCI) (90)
Wen-Chau
Liu, Lih-Wen Laih, Jung-Hui Tsai, Kun-Wei Lin, and
Chin-Chuan Cheng, “InGaAs-GaAs pseudomorphic heterostructure transistor
prepared by MOVPE,” J. Crystal Growth,
vol. 170, no. 1-4, pp. 438-441, 1997.
(EI, SCI) (91)
Kun-Wei Lin, Lih-Wen Laih, and Wen-Chau Liu, “Investigation
of InGaAs based pseudomorphic step-doped-channel field-effect transistor
(SDCFET),” Solid-State Electron.,
vol. 41, no. 3, pp. 381-385, 1997. (EI,
SCI) (92)
Lih-Wen Laih, Shiou-Ying Cheng, Wei-Chou Wang,
Po-Hung Lin, Jing-Yuh Chen, Wen-Chau
Liu, and Wei Lin, “High-performance InGaP/InGaAs/GaAs
step-compositioned doped-channel field-effect transistor (SDCFET),” Electron. Lett., vol. 33, no. 1, pp.
98-99, 1997. (EI, SCI) (93)
Chin-Chuan Cheng, Jung-Hui
Tsai, and Wen-Chau Liu, “Multiple switching phenomena of AlGaAs/InGaAs/GaAs
heterostructure transistors,” Jpn. J.
Appl. Phys., vol. 36, no. (94)
Wen-Chau
Liu, Jung-Hui
Tsai, Wen-Shiung Lour, Lih-Wen
Laih, Kong-Beng Thei and Cheng-Zu Wu, “A novel InGaP/GaAs S-shaped
negative-differential-resistance (NDR) switching for multiple-valued logic
application,” IEEE Trans. Electron
Devices, vol. 44, no. 4, pp. 520-525, 1997. (EI, SCI) (95)
Jung-Hui Tsai, Shiou-Ying Cheng, Po-Hung Lin,
Wei-Chou Wang, Jing-Yuh Chen, and Wen-Chau Liu, “Modeling and analysis of
heterostructure-emitter and heterostructure-base transistors (HEHBT’s),” Solid-State Electron., vol. 41, no. 8,
pp. 1089-1094, 1997. (EI, SCI) (96)
Jung-Hui Tsai, Hui-Jung
Shih, Shiou-Ying Cheng, and Wen-Chau
Liu, “Regenerative
switching phenomenon of a graded AlxGa1-xAs/InGaAs/GaAs
heterostructure,” Thin Solid Film,
vol. 304, no. 1-2, pp. 201-203, 1997. (EI, SCI) (97)
Shiou-Ying Cheng, Po-Hung Lin, Wei-Chou Wang,
Jing-Yuh Chen, Wen-Chau Liu,
and Wei Lin, “AlInAs/InGaAs long-period-superlattice resonant-tunneling
transistor (LPSRTT),” Electron. Lett.,
vol. 33, no. 6, pp. 534-535, 1997.
(EI, SCI) (98) Wen-Chau
Liu, Jung-Hui Tsai, Lih-Wen
Laih, and Shiou-Ying Cheng, “Multiple
quantized switching behaviours (MQSB) of functional heterostructure-emitter
bipolar transistors (HEBTs) with multiple carrier confinement
heterostructures,” Semicond. Sci. Technol., vol. 12, no. 5, pp. 614-622, 1997. (EI, SCI) (99)
Lih-Wen Laih, Shiou-Ying
Cheng, Kun-Wei Lin, Po-Hung Lin, Jing-Yuh Chen, Wei-Chou Wang, and Wen-Chau Liu, “Investigation
of a step-doped-channel negative-differential-resistance transistor,” Jpn. J. Appl. Phys., vol. 36,
no. (100)
Wen-Chau
Liu, Lih-Wen Laih, Cheng-Zu Wu, Shiou-Ying Cheng,
and Jung-Hui Tsai, “Observation of the multiple
negative-differential-resistance of metal-insulator-semiconductor-like
structure with step-compositioned InxGa1-xAs quantum
wells,” IEEE Electron Device Lett., vol. 18, no. 4, pp. 129-131, 1997. (EI, SCI) (101)
Jung-Hui Tsai, Huey-Ing Chen and Wen-Chau Liu,
“Heterostructure-emitter and pseudomorphic base transistor (HEPBT) with a
graded AlxGa1-xAs confinement layer,” Mat. Chem. Phys., vol. 51, no. 2, pp. 114-116,
1997. (EI, SCI) (102)
Jung-Hui Tsai, Shiou-Ying Cheng, Wen-Shiung
Lour, Wen-Chau Liu, and
Hao-Hsiung Lin, “Investigation of AlInAs/GaInAs
heterostructure-emitter-confinement bipolar transistors,” Semicond. Sci. Technol., vol. 12, no.
9, pp. 1135-1139, 1997. (SCI) (103)
Shiou-Ying Cheng, Wen-Lung Chang, Wen-Chau Liu, and Wei-Lin,
“Investigation of an AlInAs/GaInAs superlattice-emitter resonant tunneling
bipolar transistor (SE-RTBT),” Superlatt.
Microstruct., vol. 22,
no. 4, pp. 541-549, 1997. (EI, SCI) (104)
Shiou-Ying Cheng, Wen-Chau Liu, and Wei-Lin, “Investigation of an
AlInAs/GaInAs long-period-superlattice resonant-tunneling transistor,” Solid- State Electron., vol. 41, no.
11, pp. 1707-1713, 1997. (EI, SCI) (105)
Wen-Chau
Liu, Shiou-Ying Cheng, Jung-Hui Tsai, Po-Hung Lin,
Jing-Yuh Chen, and Wei-Chou Wang, “InGaP/GaAs superlattice-emitter resonant
tunneling bipolar transistor (SE-RTBT),” IEEE
Electron Devcie Lett., vol. 18, no. 11, pp. 515-517, 1997. (EI, SCI) (106)
Lih-Wen Laih, Jung-Hui Tsai, Cheng-Zu Wu,
Shiou-Ying Cheng, and Wen-Chau Liu, “Investigation of step-doped channel
heterostructure field-effect transistor,” IEE
Proc.-Circuits Devices Syst., vol. 144, no. 5, pp. 309-312, 1997. (EI, SCI) (107)
Wen-Chau
Liu, Lih-Wen Laih, Wen-Lung Chang, and Shiou-Ying
Cheng, “High-performance heterostructure field-effect transistor (HFETs) with
step-modulationed InGaAs channel structure,” Mat. Chem. Phys., vol.
52, no. 1, pp. 89-93, 1998. (EI, SCI) (108)
Rong-Chau Liu, and Wen-Chau Liu, “Comparison of modulation-doped effect in
negative-differential-resistance field-effect transistors (NDRFET’s),” Microelectronic Reliability, vol. 38,
no. 3, pp. 367-372, 1998. (EI, SCI) (109)
Rong-Chau Liu, and Wen-Chau Liu, “Comparison of surface recombination effect
in GaAs-based heterostructure-emitter and heterostructure-base transistor
(HEHBT’s),” Microelectronic Reliability,
vol. 38, no. 3, pp. 361-365, 1998.
(EI, SCI) (110)
Jung-Hui Tsai, Shiou-Ying
Cheng, Hui-Jung Shih, and Wen-Chau
Liu, “Functional heterostructure-emitter bipolar
transistor (HEBT) with graded-confinement and pseudomorphic-base structure,” Superlatt. Microstruct., vol. 24,
no.3, pp. 189-195, 1998. (EI, SCI) (111)
Jung-Hui Tsai, Shiou-Ying Cheng, Lih-Wen Laih, Wen-Chau Liu, and Hao-Hsiung Lin,
“An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter
bipolar transistor,” Superlatt.
Microstruct., vol. 23, no.6, pp. 1297-1307, 1998. (EI, SCI) (112)
Wen-Chau
Liu, Lih-Wen Laih, Shiou-Ying Cheng, Wen-Lung Chang
Wei-Chou Wang, Jing-Yuh Chen, and Po-Hung Lin, “Multiple
negative-differential-resistance (MNDR) phenomena of a
metal-insulator-semiconductor-insulator-metal (MISIM)-like structure with
step-compositioned InxGa1-xAs quantum wells,” IEEE Trans. Electron Devices, vol. 45,
no. 2., pp. 373-379, 1998. (EI, SCI) (113)
Jing-Yuh Chen, Shiou-Ying Cheng, Wen-Lung Chang,
and Wen-Chau Liu, “d-doping
InGaP/GaAs heterojunction bipolar transistor,” Mat. Chem. Phys., vol. 53, no. 1, pp. 88-91, 1998. (EI, SCI) (114)
Wen-Chau
Liu, Jung-Hui Tsai, Shiou-Ying Cheng, Wen-Lung
Chang, Hsi-Jen Pan, and Yung-Hsin Shie, “Investigation of GaAs-based
heterostructure- emitter bipolar transistors (HEBTs),” Thin Solid Films, vol. 324, no. 1-2, pp. 219-224, 1998. (EI, SCI) (115)
Wei-Chou Wang, Shiou-Ying Cheng, Wen-Lung Chang,
Hsi-Jen Pan, Yung-Hsin Shie and Wen-Chau
Liu, “Investigation of InGaP/GaAs double delta-doped heterojunction
bipolar transistor,” Semicond. Sci.
Technol., vol. 13, no. 6, pp. 630-633, 1998. (SCI) (116) Wen-Shiung
Lour, Wen-Lung Chang, Sheng-Tai Young, and Wen-Chau Liu, “Improved breakdown in n+-GaAs/δ(p+)-GaInP/n-GaAs
camel-gate heterojunction-FET grown by LP-MOCVD,” Electron. Lett., vol.
34, no. 8, pp. 814-815, 1998. (EI,
SCI) (117) Shiou-Ying Cheng, Hsi-Jen Pan, Yung-Hsin Shie,
Jing-Yuh Chen, Wen-Lung Chang, Wei-Chou Wang, Po-Hung Lin, and Wen-Chau Liu, “Influence of
the d-doping sheet and setback layer on the performance of an InGaP/GaAs
heterojunction bipolar transistor,” Semicond.
Sci. Technol., vol. 13, no. 10, pp.
1187-1192, 1998. (EI, SCI) (118) Po-Hung Lin, Shiou-Ying Cheng, Wen-Lung Chang, Hsi-Jen
Pan, Yung-Hsin Shie, Jung-Hui Tsai, and Wen-Chau
Liu, “Investigation of an AlInAs/GaInAs superlattice-confined emitter
bipolar transistor (SCEBT),” Mat. Chem.
Phys., vol. 57, no. 1, pp. 77-80, 1998. (EI, SCI) (119)
Wen-Chau
Liu, Shiou-Ying Cheng, Wen-Lung Chang, Hsi-Jen Pan,
and Yung-Hsin Shie, “Application of d-doped
wide-gap collector structure for high-breakdown and low-offset voltage
transistors,” Appl. Phys. Lett.,
vol. 73, no. 10, pp. 1397-1399, 1998.
(EI, SCI) (120)
Shiou-Ying Cheng, Wen-Lung Chang, Hsi-Jen Pan,
Yung-Hsin Shie, and Wen-Chau Liu,
“Design consideration of emitter-base junction structure for InGaP/GaAs
heterojunction bipolar transistors,” Solid-State
Electron., vol. 43, no. 2, pp. 297-304, 1999. (EI, SCI) (121)
Yung-Hsin Shie, Wen-Lung Chang, Hsi-Jen Pan,
Shiou-Ying Cheng, Wen-Shiung Lour, and Wen-Chau
Liu, “On the low-medium-high
step-modulation-doped-channel (LMH-SMDC) heterostructure field-effect
transistor,” Mat. Chem. Phys.,
vol. 57, no. 3, pp. 268-272, 1999.
(EI, SCI) (122)
Hsi-Jen Pan, Shiou-Ying Cheng, Wen-Lung Chang,
Shun-Ching Feng, Kuo-Hui Yu, and Wen-Chau
Liu, “In0.53Al0.22Ga0.25As/InP
heterojuction bipolar transistor with d-doped
continuous-conduction-band (CCB) structure,” Electron. Lett., vol. 35, no. 5, pp. 428-429, 1999. (EI, SCI) (123)
Shiou-Ying Cheng, Jung-Hui Tsai, Wen-Lung Chang,
Hsi-Jen Pan, Yung-Hsin Shie, and Wen-Chau
Liu, “Investigation of an InGaP/GaAs resonant-tunneling transistor
(RTT),” Solid-State Electron., vol.
43, no. 4, pp. 755-760, 1999. (EI,
SCI) (124)
Shiou-Ying Cheng, Wei-Chou Wang, Wen-Lung Chang,
Jing-Yuh Chen, Hsi-Jen Pan, and Wen-Chau
Liu, “A new InGaP/GaAs double delta-doped heterojunction bipolar
transistor (D3HBT),” Thin
Solid Films, vol. 345, no. 2, pp. 270-272, 1999. (EI, SCI) (125) Wen-Lung
Chang, Shiou-Ying Cheng, Yung-Hsin Shie, Hsi-Jen Pan, Wen-Shiung Lour, and Wen-Chau Liu, “On the n+-GaAs/d(p+)-GaInP/n-GaAs
high breakdown voltage field-effect transistor,” Semicond. Sci. Technol., vol.
14, no. 4, pp. 307-311, 1999. (EI,
SCI) (126)
Wen-Chau Liu, Wen-Lung Chang, Wen-Shiung Lour, Hsi-Jen Pan, Kuo-Hui Yu, and
Shung-Ching Feng, “Application of a new airbridge-gate structure for
high-performance Ga (127)
Wen-Shiung Lour, Wen-Lung Chang, Wen-Chau Liu, Yung-Hsin Shie,
Hsi-Jen Pan, Jing-Yuh Chen, and Wei-Chou Wang, “Application of selective
removal of mesa sidewalls for high-breakdown and high-linearity Ga (128)
Wen-Chau
Liu, Wen-Lung Chang, Wen-Shiung Lour, Shiou-Ying
Cheng, Yung-Hsin Shie, Jing-Yuh Chen, Wei-Chou Wang, and Hsi-Jen Pan, “Temperature-dependent
investigation of a high-breakdown voltage and low-leakage current Ga (129)
Wen-Shiung Lour, Wen-Lung Chang, Yu-Min Shih,
and Wen-Chau Liu, “New
self-aligned T-gate InGaP/GaAs field-effect transistors grown by LP-MOCVD,” IEEE Electron Device Lett., vol. 20,
no. 6, pp. 304-306, 1999. (EI, SCI) (130)
Wei-Chou Wang, Jing-Yuh Chen, Hsi-Jen Pan,
Shun-Ching Feng, Kuo-Hui Yu, and Wen-Chau
Liu, “Study of In0.49Ga0.51P/GaAs/In0.49Ga0.51P
double d-doped
heterojunction bipolar transistor,” Superlatt.
Microstruct., vol. 26,
no. 1, pp. 23-33, 1999. (EI, SCI) (131)
Shiou-Ying Cheng, Jung-Hui Tsai, Po-Hung Lin,
and Wen-Chau Liu,
“Superlatticed negative-differential-resistance heterojunction bipolar
transistor,” J. Vac. Sci. Technol. B,
vol. 17, no. 4, pp. 1477-1481, 1999. (SCI) (132)
Shiou-Ying Cheng, Wen-Chau Liu, Wen-Lung Chang, Hsi-Jen Pan, Wei-Chou Wang,
Jing-Yuh Chen, Shun-Ching Feng, and Kuo-Hui Yu, “Observation of the
impulse-like negative-differential resistance of superlatticed
resonant-tunneling transistor,” Appl.
Phys. Lett., vol. 75, no. 1, pp. 133-135, 1999. (EI, SCI) (133)
Wen-Chau
Liu, Wei-Chou Wang, Jing-Yuh Chen, Hsi-Jen Pan,
Shiou-Ying Cheng, Kong-Beng Thei, and Wen-Lung Chang, “A novel InP/InAlGaAs
negative-differential-resistance heterojunction bipolar transistor (NDR-HBT)
with interesting topee-shaped current-voltage characteristics,” IEEE Electron Device Lett., vol. 20,
no. 10, pp. 510-513, 1999. (EI, SCI) (134)
Wen-Chau
Liu, Hsi-Jen Pan, Shiou-Ying Cheng, Wei-Chou Wang,
Jing-Yuh Chen, Shun-Ching Feng, and Kuo-Hui Yu, “Applications of an In0.53Ga0.25Al0.22As/InP
continuous-conduction-band structure for ultralow current operation
transistors,” Appl. Phys. Lett.,
vol. 75, no. 4, pp. 572-574, 1999. (EI,
SCI) (135) Wen-Lung
Chang, Hsi-Jen Pan, Wei-Chou Wang, Kong-Beng Thei, Wen-Shiung Lour, and Wen-Chau Liu, “Influences of
the mesa-sidewall effect on Ga (136) Wen-Chau Liu, Wen-Lung Chang, Wen-Shiung Lour, Hsi-Jen Pan,
Wei-Chou Wang, Jing-Yuh Chen, Kuo-Hui Yu, and Shun-Ching Feng,
“High-performance InGaP/InxGa1-xAs HEMT with an inverted
delta-doped V-shaped channel structure,”
IEEE Electron Device Lett., vol. 20, no. 11, pp. 548-550, 1999. (EI, SCI) (137) Kun-Wei Lin, Wen-Lung
Chang, Kuo-Hui Yu, Kong-Beng Thei, Wei-Chou Wang, Hsi-Jen Pan, Wen-Chau Liu, and Laih-Wen Laih, “On the step-graded
doped-channel (SGDC) field-effect transistor,” Superlatt. Microstruct., vol. 26, no. 5, pp. 343-350, 1999. (EI, SCI) (NSC-87-2215-E-006-020)
(Cited: 0) (138)
Wen-Lung Chang, Hsi-Jen
Pan, Wei-Chou Wang, Kong-Beng Thei, Shiou-Ying Cheng, Wen-Shiung Lour, and Wen-Chau Liu,
“Temperature-dependent characteristics of the inverted delta-doped V-shaped
InGaP/InxGa1-xAs/GaAs pseudomorphic transistors,” Jpn. J. Appl. Phys., vol. 38,
no. (139)
Wen-Chau
Liu, Wen-Lung Chang, Hsi-Jen Pan, Jing-Yuh Chen,
Wei-Chou Wang, Kuo-Hui Yu, and Shun-Ching Feng, “High-breakdown n+-GaAs/d(p+)-GaInP/n-GaAs
heterojunction camel-gate FET grown by LP-MOCVD,” Journal De Physique, vol. 9, no. P8, pp. 1171-1177, 1999. (EI, SCI) (140)
Wen-Chau
Liu, Shiou-Ying Cheng, Hsi-Jen Pan, Jing-Yuh Chen,
Wei-Chou Wang, Shun-Ching Feng, and Kuo-Hui Yu, “A new In0.5Ga0.5P/GaAs
double heterojunction bipolar transistor (DHBT) prepared by MOCVD,” Journal De Physique, vol. 9, no. P8,
pp. 1155-1161, 1999. (EI, SCI) (141)
Wen-Chau
Liu, Hsi-Jen Pan, Shiou-Ying Cheng, Wei-Chou Wang,
Jing-Yuh Chen, Shun-Ching Feng, and Kuo-Hui Yu, “MOCVD grown d-doped
InGaP/GaAs heterojunction bipolar transistor,” Journal De Physique, vol. 9, no. P8, pp. 1163-1169, 1999. (EI, SCI) (142) Wen-Lung
Chang, Hsi-Jen Pan, Wei-Chou Wang, Kong-Beng Thei, Kuo-Hui Yu, Kun-Wei Lin,
Chin-Chuan Cheng, Wen-Shiung Lour, and Wen-Chau
Liu, “High-performance double delta-doped sheets Ga (143)
Shiou-Ying Cheng, Hsi-Jen
Pan, Shun-Ching Feng, Kuo-Hui Yu, and Wen-Chau
Liu, “A new wide voltage operation regime double heterojunction
bipolar transistor,” Solid-State
Electron., vol. 44, no. 4, pp. 581-585, 2000. (EI, SCI) (144) Kuan-Po
Lin, Chih-Hung Yen, Wen-Lung Chang, Kuo-Hui Yu, Kun-Wei Lin, and Wen-Chau Liu, “Study of a high-barrier-gate pseudomorphic transistor with a
step-compositioned channel and bottomside delta-doped sheet structure,” Semicond. Sci. Technol., vol. 15, no. 6, pp. 643-647, 2000. (EI,
SCI) (145)
Wen-Chau Liu, Kong-Beng Thei, Wei-Chou Wang, Hsi-Jen Pan, Shou-Gwo Wuu, Ming-Ta Lei,
Chung-Shu Wang, and Shiou-Ying Cheng, “A new and improved borderless contact
(BLC) structure for high-performance Ti-salicide in sub-quarter micron CMOS
devices,” IEEE Electron Device Lett.,
vol. 21, no. 7, pp. 344-346, 2000. (EI, SCI) (146)
Wen-Chau
Liu, Wei-Chou
Wang, Hsi-Jen Pan, Jing-Yuh Chen, Shiou-Ying Cheng, Kun-Wei Lin, Kuo-Hui Yu,
Kong-Beng Thei, and Chin-Chuan Cheng, “Multiple-route and multiple-state
current-voltage characteristics of an InP/AlInGaAs switch for multiple-valued
logic applications,” IEEE Trans.
Electron Devices, vol. 47, no. 8, pp. 1553-1559, 2000. (EI, SCI) (147)
Jing-Yuh Chen, Wei-Chou Wang, Hsi-Jen Pan,
Shun-Ching Feng, and Kuo-Hui Yu, Shiou-Ying Cheng, Wen-Chau Liu, “Characteristics of InGaP/GaAs delta-doped
heterojunction bipolar transistor,” J.
Vac. Sci. Technol. B, vol. 18, no. 2, pp. 751-756, 2000. (EI, SCI) (148) Wei-Chou
Wang, Hsi-Jen Pan, Kong-Beng Thei, Kun-Wei Lin, Kuo-Hui Yu, Chin-Chuan Cheng, Lih-Wen Laih, Shiou-Ying Cheng, and
Wen-Chau Liu, “Observation of the resonant-tunneling effect and
temperature-dependent characteristics of an InP/InGaAs heterojunction bipolar
transistor,” Semicond. Sci. Technol., vol. 15, no. 7, pp. 935-940, 2000. (EI, SCI) (149) Wen-Chau Liu, Hsi-Jen Pan, Wei-Chou Wang, Kong-Beng Thei, Kun-Wei
Lin, Kuo-Hui Yu, and Chin-Chuan Cheng, “Temperature-dependent study of a
lattice-matched InP/InGaAlAs heterojunction bipolar transistor,” IEEE Electron Device Lett., vol. 21,
no. 11, pp. 524-527, 2000. (EI, SCI) (150)
Chih-Hung Yen, Kuan-Po Lin,
Kuo-Hui Yu, Wen-Lung Chang, Kun-Wei Lin, and Wen-Chau Liu, “Investigation of mesa-sidewall effects on
direct current and radio frequency characteristics of Ga (151)
Kuo-Hui Yu, Kun-Wei Lin, Chin-Chuan Cheng,
Kuan-Po Lin, Chih-Hung Yen, Cheng-Zu Wu, and Wen-Chau Liu, “InGaP/GaAs camel-like field-effect
transistor for high-breakdown and high-temperature applications,” Electron. Lett., vol. 36, no. 22, pp.
1886-1888, 2000. (EI, SCI) (152)
Kuo-Hui Yu, Wen-Lung Chang, Shun-Ching Feng, and
Wen-Chau Liu,
“Characteristics of GaAs/InGaP/GaAs doped channel camel-gate field-effect
transistor,” Solid-State Electron.,
vol. 44, no. 22, pp. 2069-2075, 2000.
(EI, SCI) (153)
Hsi-Jen Pan, Wei-Chou Wang, Kong-Beng Thei,
Chin-Chuan Cheng, Kuo-Hui Yu, Kun-Wei Lin, Cheng-Zu Wu, and Wen-Chau Liu, “Investigation
of temperature-dependent performances of InP/In0.53Ga0.34Al0.13As
heterojunction bipolar transistors,” Semicond. Sci. Technol, vol. 15, pp.
1101-1106, 2000. (EI, SCI) (154)
Kuo-Hui Yu, Kun-Wei Lin, Chin-Chuan Cheng,
Wen-Lung Chang, Jung-Hui Tsai, Shiou-Ying Cheng and Wen-Chau Liu, “Temperature dependence of gate current and
breakdown behaviors in an n+-GaAs/p+-InGaP/n--GaAs
high-barrier gate field-effect transistor,” Jpn. J. Appl. Phys., vol. 40, no. 1, pp. 24-27, 2001. (EI, SCI) (155)
Wei-Chou Wang, Hsi-Jen Pan, Kun-Wei Lin, Kuo-Hui
Yu, Cheng-Zu Wu, Lih-Wen Laih, Shiou-Ying Cheng, and Wen-Chau Liu, “Investigation of InP/InGaAs
superlattice-emitter resonant tunneling bipolar transistors (RTBTs),” Superlatt. Microstruct., vol. 29, no.2, pp. 111-119, 2001. (EI, SCI) (156)
Wei-Chou Wang, Hsi-Jen Pan, Kuo-Hui Yu, Kun-Wei
Lin, Jung-Hui Tsai, Shiou-Ying Cheng, and Wen-Chau Liu, “Study of the
multiple-negative-differential-resistance (MNDR) switching behaviors based on
heterojunction bipolar transistor (HBT) structures,” Superlatt. Microstruct., vol. 29, no.2,
pp. 133-145, 2001. (EI, SCI) (157)
Kun-Wei Lin, Kuo-Hui Yu, Wen-Lung Chang,
Chin-Chuan Cheng, Kuan-Po Lin, Chih-Hung Yen, Wen-Shiung Lour, and Wen-Chau Liu, “Characteristics
and comparison of In0.49Ga0.51P/GaAs single and double
delta-doped pseudomorphic high electron mobility transistors,” Solid-State Electron., vol. 45, no. 2, pp. 309-314, 2001. (EI, SCI) (158)
Hsi-Jen Pan, Shun-Ching Feng, Wei-Chou Wang,
Kun-Wei Lin, Kuo-Hui Yu, Cheng-Zu Wu, Lih-Wen Laih, and Wen-Chau Liu, “Investigation of an InGaP/GaAs
resonant-tunneling heterojunction bipolar transistor,” Solid-State Electron., vol. 45, no. 3,
pp. 489-494, 2001. (EI, SCI) (159)
Wei-Chou Wang, Hsi-Jen Pan, Kun-Wei
Lin, Kuo-Hui Yu, Chin-Chuan Cheng, Chih-Hung Yan, Shiou-Ying Cheng, and Wen-Chau Liu, “
Characteristics of d-doped InP/InGaAlAs heterojunction
bipolar transistors (HBT's),” Semicond.
Sci. Technol, vol. 16, pp. 339-344, 2001. (EI, SCI) (160)
Wei-Chou Wang, Hsi-Jen Pan,
Kong-Beng Thei, Kun-Wei Lin, Kuo-Hui Yu, and Chin-Chuan Cheng, Shiou-Ying
Cheng, and Wen-Chau Liu, “
Photonic-sensitive InAlGaAs/InP negative-differential-resistance
heterojunction bipolar transistor,” Superlatt.
Microstruct., vol. 29, pp. 359-365, 2001. (EI, SCI) (161)
Wen-Chau
Liu, Hsi-Jen Pan, Wei-Chou Wang, Shun-Ching Feng,
Kun-Wei Lin, Kuo-Hui Yu, and Lih-Wen Laih, “On the multiple
negative-differential-resistance (MNDR) InGaP/GaAs resonant tunneling bipolar
transistors,” IEEE Trans. Electron Devices,
vol. 48, pp. 1054-1059, 2001. (EI,
SCI) (162)
Wen-Chau Liu, Hsi-Jen Pan,
Huey-Ing Chen, Kun-Wei Lin, Shiou-Ying Cheng, and Kuo-Hui Yu,
“Hydrogen-sensitive characteristics of a novel Pd/InP MOS Schottky diode
hydrogen sensor,” IEEE Trans. Electron
Devices, vol. 48, pp. 1938-1944, 2001. (EI, SCI) (163)
Wen-Chau
Liu, Wen-Lung Chang, Wen-Shiung Lour, Kuo-Hui Yu,
Kun-Wei Lin, Chin-Chuan Cheng, and Shiou-Ying Cheng, “Temperature-dependence
investigation of a high-performance inverted delta-doped V-shaped GaInP/InxGa1-xAs/GaAs
pseudomorphic high electron mobility transistor,” IEEE Trans. Electron Devices, vol. 48, pp. 1290-1296, 2001. (EI, SCI) (164)
Wen-Chau
Liu, Kuo-Hui Yu, Kun-Wei Lin, Jung-Hui Tsai, Cheng-Zu
Wu, Kuan-Po Lin, and Chih-Hung Yen, “On the InGaP/GaAs/InGaAs camel-like FET
for high-breakdown, low-leakage, and high-temperature operations,” IEEE Trans. Electron Devices, vol. 48,
pp. 1522-1530, 2001. (EI, SCI) (165)
Wen-Chau
Liu, Kong-Beng Thei, Hung-Ming Chuang, Kun-Wei Lin,
Chin-Chuan Cheng, Yen-Shih Ho, Chi-Wen Su, Shyh-Chyi Wong, Chih-Hsien Lin,
and Carlos H. Diaz, “Characterization of polysilicon resistors in sub (166)
Kong-Beng Thei, Wen-Chau Liu, Hung-Ming Chuang, Kun-Wei Lin, Chin-Chuan
Cheng, Chin-Hsiung Ho, Chi-Wen Su, Shou-Gwo Wuu, and Chung-Shu Wang, “A novel
double ion-implant (DII) Ti-salicide technology for high-performance sub (167)
Wen-Chau Liu, Kuo-Hui Yu,
Rong-Chau Liu, Kun-Wei Lin, Chin-Chuan Cheng, Kuan-Po Lin, Chih-Hung Yen, and
Cheng-Zu Wu, “Improved n+-GaAs/p+-In0.49Ga0.51P/n-GaAs
camel-like gate structure for high-breakdown, low-leakage, and
high-temperature applications,” Appl.
Phys. Lett., vol. 79, pp. 967-969, 2001. (EI, SCI) (168)
Wen-Chau Liu, Kuo-Hui Yu,
Rong-Chau Liu, Kun-Wei Lin, Kuan-Po Lin, Chih-Hung Yen, Chin-Chuan Cheng, and
Kong-Beng Thei, “Investigation of temperature-dependent
characteristics of an n+-InGaAs/n-GaAs composite
doped channel HFET,” IEEE Trans.
Electron Devices, vol. 48, pp. 2677-2683, 2001. (EI, SCI) (169)
Wen-Chau
Liu, His-Jen Pan, Huey-Ing Chen, Kun-Wei Lin, and Chik-Kai
Wang, “Comparative hydrogen-sensing study of Pd/GaAs and Pd/InP
metal-oxide-semiconductor Schottky diodes,” Jpn. J. Appl. Phys., vol. 40, pp. 6254-6259, 2001. (EI, SCI) (170)
Wen-Chau
Liu, His-Jen Pan, Chih-Hung Yen, Kuan-Po Lin,
Cheng-Zu Wu, Wen-Hui Chiou, and Chun-Yuan Chen, “MOCVD grown InGaP/GaAs
multiple negative-differential-resistance (MNDR) resonant-tunneling bipolar
transistors,” Journal De Physique,
vol. 11, Pr. 3, pp. 931-936, 2001. (EI,
SCI) (171)
Wen-Chau
Liu, Kun-Wei Lin, Kuo-Hui Yu, Wen-Lung Chang,
Chin-Chuan Cheng, Chih-Kai Wang, and Hung-Ming Chuang, “High-performance In0.49Ga0.51P/InGaAs
single and double delta-doped pseudomorphic high electron mobility
transistors (δ-PHEMT’s),” Journal De
Physique, vol. 11, Pr. 3, pp. 945-950, 2001. (EI, SCI) (172)
Wen-Chau
Liu, Kuo-Hui Yu, Kun-Wei Lin, Kuan-Po Lin,
Chih-Hung Yen, Chin-Chuan Cheng, Chih-Kai Wang, and Hung-Ming Chuang, “MOCVD
grown InGaP/GaAs camel-like field-effect transistor for high-breakdown and
high-temperature operations,” Journal
De Physique, vol. 11, Pr. 3, pp. 951-955, 2001. (EI, SCI) (173)
Wen-Chau
Liu, Wei-Chou Wang, Chih-Hung Yen, Chin-Chuan
Cheng, Cheng-Zu Wu, Wen-Hui Chiou, and Chun-Yuan Chen, “A systematic study of
MOCVD grown InP/InGaAlAs heterojunction bipolar transistors with anomalous switching
behavior,” Journal De Physique,
vol. 11, Pr. 3, pp. 957-961, 2001. (EI,
SCI) (174)
Kun-Wei Lin, Kuo-Hui Yu, Wen-Lung Chang,
Chih-Kai Wang, Wen-Huei Chiou, and Wen-Chau
Liu, “On the InGaP/InxGa1-xAs pseudomorphic
high-electron-mobility transistors for high-temperature operations,” Microelectron. Reliab., vol. 41, pp.
1897-1902, 2001. (EI, SCI) (175)
Kun-Wei Lin, Chin-Chuan Cheng, Shiou-Ying Cheng,
Kuo-Hui Yu, Chih-Kai Wang, Hung-Ming Chuang, Jing-Yuh Chen, Cheng-Zu Wu, and Wen-Chau Liu, “A novel
Pd/oxide/GaAs metal–insulator–semiconductor field-effect transistor (MISFET)
hydrogen sensor,” Semicond. Sci. Technol, vol. 16, pp. 997-1001, 2001. (EI, SCI) (176)
Kuo-Hui Yu, Kun-Wei Lin, Shiou-Ying Cheng,
Chin-Chuan Cheng, Jing-Yuh Chen, Cheng-Zu Wu, and Wen-Chau Liu, “Off-state breakdown characteristics of
InGaP-based high-barrier gate heterostructure field-effect transistors,” Superlatt. Microstruct., vol. 30, pp. 231-239, 2001. (EI, SCI) (177)
Wen-Hui Chiou, His-Jen Pan, Rong-Chau Liu,
Chun-Yuan Chen, Chih-Kai Wang, Hung-Ming Chuang, and Wen-Chau Liu, “Characterization of InP/InGaAs
double-heterojunction bipolar transistors with tunnelling barriers and
composite collector structures,”
Semicond. Sci. Technol, vol. 17, pp. 87-92, 2002. (EI, SCI)) (178)
His-Jen Pan, Kun-Wei Lin, Kuo-Hui Yu, Chin-Chuan
Cheng, Kong-Beng Thei, Wen-Chau Liu,
and Huey-Ing Chen, “Highly hydrogen-sensitive Pd/InP
metal-oxide-semiconductor Schottky diode hydrogen sensor,” Electron. Lett., vol. 38, no.2, pp.
92-94, 2002. (EI, SCI) (179)
Kuo-Hui Yu, Kun-Wei Lin, Kuan-Po Lin,
Chih-Hung Yen, Ckih-Kai Wang, and Wen-Chau
Liu, “Study of
InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect
transistors,” J. Vac. Sci.
Technol. B, vol. 20, no. 3, pp. 1096-1101, 2002. (EI, SCI) (180)
Kong-Beng Thei, Hung-Ming Chuang,
Kuo-Hui Yu, Wen-Chau Liu,
Rong-Chau Liu, Kun-Wei Lin, Chi-Wen Su, Chin-Shiung Ho, Shou-Gwo Wuu, and
Chung-Shu Wang, “On the high-performance Ti-salicide ULSI CMOS
devices prepared by a borderless contact technique and double-implant
structure,”
Semicond. Sci. Technol, vol. 17, pp. 205-210, 2002. (EI, SCI) (181)
Kong-Beng Thei, Hung-Ming Chuang, Sheng-Fu Tsai,
Chun-Tsen Lu, Xin-Da Liao, Kuan-Ming Lee, and Wen-Chau Liu,
“Effects of electrical and temperature stress on polysilicon resistors for CMOS
technology applications,” Superlatt.
Microstruct., vol. 31,
no. 6, pp. 289-296, 2002. (EI, SCI) (182)
Hung-Ming Chuang, Kong-Beng Thei, Sheng-Fu Tsai,
Chun-Tsen Lu, Xin-Da Liao, Kuan-Ming Lee, and Wen-Chau Liu,
“Comparative study of double ion-implant Ti-salicide and pre-amorphization
implant Co-salicide for ultra-large-scale-integration applications,” Semicond. Sci. Technol, vol. 17, pp.
1075-1080, 2002. (EI, SCI) (183)
Chun-Yuan Chen, Wei-Chou Wang, Wen-Hui Chiou,
Chih-Kai Wang, Hung-Ming Chuang, Shiou-Ying Cheng, and Wen-Chau Liu, “A comparative study of GaAs- and InP-based
superlattice emitter resonant tunneling bipolar transistors (SE-RTBT's),” Solid-State Electron., vol. 46, no. 9, pp. 1289-1294, 2002. (EI, SCI) (184)
Kuo-Hui Yu, Hung-Ming Chuang, Kun-Wei Lin, Chin-Chuan
Cheng, Jing-Yuh Chen, and Wen-Chau
Liu, “Improved temperature-dependent performances of a novel
InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility
transistor (DC-PHEMT),” IEEE Trans.
Electron Devices, vol. 49, pp. 1687-1693, 2002. (EI, SCI) (185)
Wen-Chau Liu, Kun-Wei Lin, Huey-Ing Chen, Chih-Kai Wang, Chin-Chuan Cheng,
Shiou-Ying Cheng, and Chun-Tsen Lu, “A new Pt/Oxide/In0.49Ga0.51P
MOS Schottky diode hydrogen sensor,” IEEE Electron Device Lett., vol. 23, pp. 640-642, 2002. (EI, SCI) (186)
Chih-Kai Wang, Kuo-Hui Yu, Wen-Hui
Chiou, Chun-Yuan Chen, Hung-Ming Chuang, and Wen-Chau Liu, “On
the high-performance n+-GaAs/p+-InGaP/n-GaAs high-barrier gate camel-like
HFETs,”
Solid-State Electron., vol. 47, no. 1, pp.
19-24, 2003. (EI, SCI) (187)
Kong-Beng Thei, Chung-Long Cheng,
Hsin-Chien Lin, Tong-Sen Chang, Nun-Sian Tsai, Kuo-Hwa Lee, Hung-Ming Chuang,
Sheng-Fu Tsai, and Wen-Chau Liu, “A New and Improved Structure
of Polysilicon Resistor for Subquarter Micrometer CMOS Device Applications,” IEEE Trans. Electron Devices, vol. 50,
pp. 516-518, 2003. (EI, SCI) (188)
Hung-Ming Chuang, Chih-Kai Wang, Kun-Wei Lin,
Wen-Hui Chiou, Chun-Yuan Chen, and Wen-Chau Liu, “Comparative
Study on DC Characteristics of In0.49Ga0.51P-Channel Heterostructure
Field-Effect Transistors with Different Gate Metals,” Semicond. Sci. Technol.,
vol. 18, pp. 319-324, 2003.
(EI, SCI) (189)
Kun-Wei Lin, Huey-Ing Chen, Hung-Ming Chuang,
Chun-Yuan Chen, and Wen-Chau Liu, “A Hydrogen Sensing Pd/InGaP
Metal-Semiconductor (MS) Schottky Diode Hydrogen Sensor,” Semicond. Sci. Technol., vol. 18, pp.615-619, 2003. (EI, SCI) (190)
Chun-Yuan Chen, Wen-Huei Chiou,
Chih-Hung Yen, Hung-Ming Chuang, Jing-Yuh Chen, Chin-Chuan Cheng, and Wen-Chau
Liu, “Study on dc characteristics of an interesting InP’InGaAs
tunneling-emitter bipolar transistor with double heterostructures,” J. Vac. Sci. & Technol., vol. 21,
pp. 82-86, 2003. (EI, SCI) (191)
Chun-Yuan Chen, Shiou-Ying Cheng, Wen-Hui Chiou,
Hung-Ming Chuang, Rong-Chau Liu, Chih-Hung Yen, Jing-Yuh Chen, Chin-Chuan
Cheng, and Wen-Chau Liu, “DC Characterization of an InP-InGaAs
Tunneling Emitter Bipolar Transistor (TEBT),” IEEE Trans. Electron Devices, vol. 50, pp. 874-879, 2003. (EI, SCI) (192)
Chun-Yuan Chen,
Shiou-Ying Cheng, Wen-Hui Chiou, Hung-Ming Chuang, and Wen-Chau Liu, “A novel InP/InGaAs TEBT for ultralow current
operations” IEEE Electron Device Lett.
, vol. 24, pp. 126-128, 2003. (EI,
SCI) (193)
Hung-Ming Chuang, Sheng-Fu Tsai, Kong-Beng Thei,
and Wen-Chau Liu, “Anomalous Temperature-Dependent Characteristics
of Silicon Diffused Resistors,” IEE
Electron. Lett., vol. 39, no.13, pp. 1015-1016, 2003. (EI, SCI) (194)
Hung-Ming Chuang, Shiou-Ying Cheng, Xin-Da Liao,
Chun-Yuan Chen, and Wen-Chau Liu, “InGaP/InGaAs Double
Delta-Doped Channel Transistor,” IEE Electron.
Lett., vol. 39, no.13, pp. 1016-1018, 2003. (EI, SCI) (195)
Hung-Ming Chuang, Kong-Beng Thei,
Sheng-Fu Tsai, and Wen-Chau Liu, “Temperature-Dependent
Characteristics of Polysilicon and Diffused Resistors,” IEEE Trans. Electron Devices, vol. 50, no. 5, pp. 1413-1415,
2003. (EI, SCI) (196) Chun-Tsen Lu, Kun-Wei Lin, Huey-Ing Chen,
Hung-Ming Chuang, Chun-Yuan Chen, and Wen-Chau Liu, “A New Pd/Oxide/Al0.3Ga0.7As
MOS Hydrogen Sensor,” IEEE Electron
Device Lett., vol. 24, pp. 390-392, 2003. (EI, SCI) (197)
Hung-Ming Chuang, Shiou-Ying Cheng, Chun-Yuan
Chen, Xin-Da Liao, Rong-Chau Liu, and Wen-Chau Liu,
“Investigation of a New InGaP/InGaAs Pseudomorphic Double Doped-Channel
Heterostructure Field-effect Transistor (PDDCHFET)”, IEEE Trans. Electron Devices, vol. 50, pp. 1717-1723, 2003. (EI, SCI) (198) Yan-Ying Tsai, Kun-Wei Lin, Huey-Ing Chen,
Chun-Tsen Lu, Hung-Ming Chuang, Chun-Yuan Chen, and Wen-Chau Liu,
“Comparative hydrogen sensing performances of Pd- and Pt-InGaP
metal–oxide–semiconductor Schottky diodes,” J. Vac. Sci. & Technol., vol. B21, pp. 2471-2477, 2003. (EI, SCI) (199) Kun-Wei Lin, Huey-Ing Chen, Chin-Chuan Cheng,
Hung-Ming Chuang, Chun-Tsen Lu, and Wen-Chau Liu, “Characteristics of
A New Pt/Oxide/In0.49Ga0.51P Hydrogen-Sensing Schottky
Diode,” Sens. Actuators B,
vol. 94, pp. 145-151, 2003. (EI, SCI) (200) Hung-Ming Chuang, Kong-Beng Thei, Sheng-Fu Tsai,
Chun-Tsen Lu, Xin-Da Liao, Kuan-Ming Lee, Hon-Rung Chen, and Wen-Chau Liu, “A Comprehensive Study of Polysilicon Resistors
for CMOS ULSI Applications,” Superlattices
& Microstructures, vol. 33, pp. 193-208, 2003. (EI, SCI) (201) Yan-Ying Tsai, Kun-Wei Lin, Chun-Tsen Lu,
Huey-Ing Chen, Hung-Ming Chuang, Chun-Yuan Chen, Chin-Chuan Cheng, Wen-Chau
Liu, “Investigation of Hydrogen-Sensing Properties of Pd/AlGaAs-Based
Schottky Diodes”, IEEE
Trans. Electron Devices, vol. 50, pp. 2532-2539, 2003. (EI, SCI) (202) Hung-Ming Chuang, Shiou-Ying Cheng, Po-Hsien Lai,
Xin-Da Liao, Chun-Yuan Chen, Chih-Hung Yen, Rong-Chau Liu, and Wen-Chau Liu, “Study of InGaP/InGaAs Double Doped Channel
Heterostructure Field-effect Transistors (DDCHFETs),” Semicond. Sci.
Technol., vol. 19, no. 1, pp. 87-92, 2004. (EI, SCI) (203)
Shiou-Ying
Cheng, Jing-Yuh Chen, Chun-Yuan Chen, Hung-Ming Chuang, Chih-Hung Yen,
Kuan-Ming Lee and Wen-Chau Liu, “Comprehensive study of InGaP/AlxGa1-xAs/GaAs
heterojunction bipolar transistors with different doping concentrations of AlxGa1-xAs
graded layers,” Semicond. Sci. Technol., vol.
19, pp. 351-358, 2004. (EI, SCI) (204)
Kun-Wei
Lin, Huey-Ing Chen, Hungs-Ming Chuang, Chun-Yuan Chen, Chun-Tsen Lu,
Chin-Chuan Cheng, and Wen-Chau Liu, “Characteristics of Pd/InGaP Schottky Diodes Hydrogen Sensors,” IEEE Sensors Journal,
vol. 4, pp. 72-79, 2004. (EI, SCI) (205) Hung-Ming Chuang, Shiou-Ying Cheng, Chun-Yuan Chen, Xin-Da Liao,
Po-Hsien Lai, Chung-I Kao, and Wen-Chau Liu, “Study of
InGaP/InGaAs Double Delta-Doped Channel Heterostructure Field-Effect
Transistors (DDDCHFETs),” J.
Vac. Sci. & Technol., vol. B22, pp. 832-837, 2004. (EI,
SCI) (206) Der-Feng Guo, Jing-Yuh Chen, Hung-Ming Chuang,
Chun-Yuan Chen, and Wen-Chau Liu, “Characteristics of a New
BBOS With an AlGaAs-d(n+)-GaAs-InAlGaP Collector Structure,” IEEE Trans. Electron Devices,
vol. 51, pp. 542-547, 2004. (EI, SCI) (207) Der-Feng Guo, Jing-Yuh Chen, Hung-Ming Chuang,
Chun-Yuan Chen, and Wen-Chau Liu, “A Double-Barrier-Emitter
Triangular-Barrier Optoelectronic Switch,” IEEE J. Quantum Electron., vol.
40, pp. 413-419., 2004. (EI, SCI) (208) Chin-Chuan Cheng, Yan-Ying Tsai,
Kun-Wei Lin, Huey-Ing Chen, Chun-Tsen Lu, and Wen-Chau Liu, “Hydrogen sensing characteristics
of a Pt-oxide-Al0.3Ga0.7As MOS Schottky diode,” Sens. Actuators B,
vol. 99, pp. 425-430, 2004. (EI, SCI) (209) Chin-Chuan Cheng, Yan-Ying Tsai, Kun-Wei Lin,
Huey-Ing Chen, Wei-His Hsu, Hung-Ming Chuang, Chun-Yuan Chen, and Wen-Chau
Liu, “Hydrogen sensing characteristics of Pd- and Pt-Al0.3Ga0.7As
metal–semiconductor (MS) Schottky diodes” Semicond. Sci. Technol., vol. 19,
pp. 778-782, 2004. (EI, SCI) (210) Jing-Yuh Chen, Der-Feng Guo, Shiou-Ying Cheng,
Kuan-Ming Lee, Chun-Yuan Chen, Hung-Ming Chuang, Ssu-Yi Fu, and Wen-Chau
Liu, “A New InP/InGaAs Heterojunction Bipolar Transistor (HBT) with a
Superlattice-Collector Structure,” IEEE Electron Device Lett.,
vol. 25, pp. 244-246, 2004. (EI, SCI) (211) Po-Hsien
Lai, Hung-Ming Chuang, Sheng-Fu Tsai, Chung-I Kao, Horng-Rung Chen, Chun-Yuan
Chen, and Wen-Chau Liu, “Characteristics of a New Camel-Gate
Field Effect Transistor (CAMFET) with a Composite Channel Structure,” Semicond.
Sci. Technol., vol. 19, pp. 912-916, 2004. (EI, SCI) (212) Chun-Yuan Chen, Shiou-Ying Cheng,
Wen-Hui Chiou, Hung-Ming Chuang, Ssu-I Fu, and Wen-Chau Liu,
“Comparative studies of InP/InGaAs single and double heterojunction bipolar
transistors with a tunnelling emitter barrier structure,” Semicond. Sci. Technol., vol. 19, pp. 864-869, 2004. (EI, SCI) (213) Shiou-Ying Cheng, Chun-Yuan Chen, Jing-Yuh Chen, Hung-Ming Chuang,
Chih-Hung Yen, and Wen-Chau Liu, “Comprehensive study of
InGaP–AlxGa1–xAs–GaAs composite-emitter heterojunction
bipolar transistors with different thickness of AlxGa1–xAs
graded layers,” J.
Vac. Sci. & Technol., vol. B22, no.4, pp. 1699-1704, 2004. (EI,
SCI) (214) Chun-Yuan Chen, Ssu-I.
Fu, Shiou-Ying Cheng, Chi-Yuan
Chang, Ching-Hsiu Tsai, Chih-Hung Yen, Sheng-Fu Tsai, Rong-Chau Liu, and Wen-Chau
Liu, “Influences of Surface
Sulfur Treatments on the Temperature-Dependent Characteristics of
Heterojunction Bipolar Transistors (HBTs)” IEEE Trans. Electron Devices, vol. 51, pp. 1963-1971, 2004. (SCI) (215) Jing-Yuh Chen, Chun-Yuan Chen,
Kuan-Ming Lee, Chih-Hung Yen, Sheng-Fu Tsai, Shiou-Ying Cheng, and Wen-Chau
Liu, “Temperature-dependent DC characteristics of an InGaAs/InGaAsP
heterojunction bipolar transistors with an InGaAsP spacer and a
composite-collector structure”, J. Vac. Sci. Technol. B, vol. 22.
, pp. 2727-2733, 2004. (EI, SCI) (216) Chin-Chuan Cheng, Yan-Ying Tsai,
Kun-Wei Lin, Huey-Ing Chen, Wei-Hsi Hsu, Ching-Wen Hong, and Wen-Chau
Liu, “Temperature-dependent hydrogen sensing characteristics of a
pd/oxide/Al0.24Ga0.76As high electron mobility
transistor (HEMT)”, IEE Electron. Lett., vol. 40.
, pp. 1608-1609, 2004. (SCI) (217) Jing-Yuh Chen, Shiou-Ying Cheng,
Chun-Yuan Chen, Kuan-Ming Lee, Chih-Hung Yen, Ssu-Yi Fu, Sheng-Fu Tsai, and Wen-Chau
Liu, “Characteristics of an InP-InGaAs-InGaAsP HBT”, IEEE Trans. Electron Devices, vol. 51. , pp. 1935-1938,
2004.
(EI, SCI) (218) Shiou-Ying Cheng, Chun-Yuan Chen,
Ssu-I. Fu, Po-Hsien Lai, Yan-Ying Tsai, and Wen-Chau Liu, “DC
Characterization of an InP/InGaAs Tunneling Emitter Bipolar Transistor
(TEBT),” Jpn. J. Appl. Phys., vol.
44, pp. 824-827, 2005. (SCI) (219) Shiou-Ying Cheng, Chun-Yuan Chen,
Jing-Yuh Chen, Wen-Chau Liu, Wen-Lung Chang, Meng-Hsueh Chiang,
“Comprehensive studies of InGaP/GaAs heterojunction bipolar transistors with
different thickness of setback layers,” Superlattices
& Microstructures, vol. 37, pp. 171-183, 2005. (SCI) (220) Yen-I Chou, Chai-Ming Chen, Wen-Chau
Liu, and Huey-Ing Chen, “A
New Pd-InP Schottky Hydrogen Sensor Fabricated by Electrophoretic Deposition
With Pd Nanoparticles” IEEE Electron Device Lett.,
vol. 26, pp. 62-65, 2005. (SCI) (221) Chin-Chung Cheng, Yan-Ying Tsai, Kun-Wei Lin, Huey-Lng Chen, and
Wen-Chau Liu, “Hydrogen Sensing properties of a Pt-oxide-Al0.24Ga0.76As
high-electron-mobility transistor” Appl.
Phys. Lett., vol. 86, pp. 112103-1-112103-3, 2005. (EI, SCI) (222) Po
Hsien Lai, Ssu I Fu, Yan-Ying Tsai, Chih Hung Yen, Shiou Ying Cheng, and Wen-Chau Liu, “Characteristics of a sulfur-passivated
InGaP/InGaAs/GaAs heterostructure field-effect transistor” Appl. Phys. Lett., vol. 87, pp. 083502-1-083502-3, 2005. (EI, SCI) (223) Chin-Chuan Cheng, Yan-Ying Tsai,
Kun-Wei Lin, Huey-Ing Chen, Wei-Hsi Hsu, Ching-Wen Hong, Han-Lien Lin, and Wen-Chau Liu, “Study of hydrogen-sensing characteristics of a
Pt-oxide-AlGaAs metal-oxide -semiconductor high electron mobility
transistor,” J. Vac. Sci.
& Technol., vol. 23, pp. 1943-1947, 2005. (EI, SCI) (224) Po-Hsien
Lai, Chun-Wei Chen, Chung-I Kao, Ssu-I Fu, Yan-Ying Tsai, Ching-Wen Hung,
Chih-Hung Yen, Hung-Ming Chuang, Shiou-Ying Cheng, and Wen-Chau Liu, “Influences
of sulfur passivation on temperature-dependent characteristics of an
AlGaAs/InGaAs/GaAs PHEMT,” IEEE
Trans. Electron Devices, vol. 53, pp. 1-8, 2006. (SCI) (225) Chin-Chuan Cheng, Yan-Ying Tsai,
Kun-Wei Lin, Huey-Ing Chen, Wei-Hsi Hsu, Ching-Wen Hong, and Wen-Chau Liu, “Characteristics
of a Pd-oxide-In0.49Ga0.51P high electron mobility
transistor (HEMT)-based hydrogen sensor,” Sens. Actuators B, vol. 113,
pp. 29-35, 2006. (EI, SCI) (226) Ching-Wen
Hung, Han-Lien Lin, Yan-Ying Tsai, Po-Hsien Lai, Ssu-I Fu, Huey-Ing Chen and Wen-Chau Liu, “AlGaAs/InGaAs/GaAs transistor-based
hydrogen sensing device grown by metal organic chemical vapor deposition,”
Jpn. J. Appl. Phys., vol. 45, pp. 680-684, 2006. (EI, SCI) (227) Yan-Ying Tsai, Ching-Wen Hung, Kun-Wei Lin,
Po-Hsien Lai, Ssu-I Fu, Hung-Ming Chuang, Huey-Ing Chen, and Wen-Chau
Liu, “On a GaAs-based transistor-type hydrogen sensing detector with
a Pd/Al0.24Ga0.76As metal-semiconductor Schottky gate,” Semicond. Sci. Technol., vol. 21, pp. 221-227, 2006. (EI, SCI) (228) Chin-Chuan Cheng, Yan-Ying Tsai, Kun-Wei Lin,
Huey-Ing Chen, Wei-Hsi Hsu, Ching-Wen Hong, Rong-Chan Liu, and Wen-Chau
Liu, “Pd-oxide-Al0.24Ga0.76As (MOS) high
electron mobility transistor (HEMT) based hydrogen sensor,” IEEE Sensors J., vol. 6, pp. 287-292, 2006. (EI, SCI) (229) Shiou-Ying
Cheng, Ssu-I Fu, Kuei-Yi Chu, Po-Hsien Lai, Li-Yang Chen, Wen-Chau Liu, and Meng-Hsueh
Chiang, “Improved DC and
microwave performance of heterojunction bipolar transistors by full sulfur
passivation,” J. Vac. Sci. & Technol. B, vol. 24, pp. 669-674, 2006. (EI, SCI) (230) Po-Hsien
Lai, Ssu-I Fu, Yan-Ying Tsai, Chih-Hung Yen, Hung-Ming Chuang, Shiou-Ying
Cheng, and Wen-Chau Liu, “Thermal stability improvement of a
sulfur–passivated InGaP/InGaAs/GaAs heterostructure field-effect transistor (HFET),” IEEE Trans. on Device
and Materials Reliability, vol. 6, pp. 52-59, 2006. (EI, SCI) (231) Ssu-I Fu, Shiou-Ying Cheng, and Wen-Chau Liu, “Characteristics
of InGaP/GaAs heterojunction bipolar transistors (HBTs) with sulfur
treatments,” Superlattices & Microstructures, vol. 39, pp. 436-445, 2006. (SCI) (232) Po-Hsien Lai, Ssu-I Fu, Yan-Ying Tsai, Ching-Wen
Hung, Chih-Hung Yen, Hung-Ming Chuang, and Wen-Chau Liu,
“Improved
Temperature-Dependent Characteristics of a Sulfur-Passivated
AlGaAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT),”
J. Electrochem. Soc., vol.
153, pp. G632-G635, 2006. (EI, SCI) (233) Ching-Wen Hung, Han-Lien Lin,
Yan-Ying Tsai, Po-Hsien Lai, Ssu-I Fu, Huey-Ing Chen, and Wen-Chau Liu,
“Three-terminal-controlled resister-type hydrogen sensor,” IEE Electron. Lett., vol. 42, pp. 578-579, 2006. (SCI) (234) Jun-Rui Huang, Wei-Chou Hsu, Yeong-Jia
Chen, Tzong-Bin Wang, Kun-Wei Lin, Huey-Ing Chen, and Wen-Chau Liu, “Comparison of hydrogen sensing
characteristics for Pd/GaN and Pd/Al0.3Ga0.7As schottky
diodes,” Sens. Actuators B, vol. 117, pp. 151-158, 2006. (EI, SCI) (235) Chun-Wei Chen, Po-Hsien Lai, Wen-Shiung Lour,
Der-Feng Guo, Jung-Hui Tsai, and Wen-Chau Liu, “Temperature
dependences of an In0.46Ga0.54As/In0.42Al0.58As
based metamorphic high electron mobility transistor (MHEMT),” Semicond.
Sci. Technol., vol. 21, pp. 1358-1363, 2006. (236) Ching-Wen
Hung, Han-Lien Lin, Yan-Ying Tsai, Po-Hsien Lai, Ssu-I Fu, Huey-Ing Chen, and
Wen-Chau Liu, “New
field-effect resistive Pd/oxide/AlGaAs hydrogen sensor based on pseudomorphic
high electron mobility transistor (PHEMT),” Jpn. J. Appl. Phys., vol. 45, pp. L780-L782, 2006. (237) Ssu-I
Fu, Po-Hsien Lai, Yan-Ying Tsai, Ching-Wen Hung, Chih-Hung Yen, Shiou-Ying
Cheng, and Wen-Chau Liu, “Performance enhancement of a
heterojunction bipolar transistor (HBT) by two-step passivation,” Applied Surface Science, vol. 252, pp. 7755-7759, 2006. (238) Ssu-I Fu, Shiou-Ying
Cheng, Po-Hsien Lai, Yan-Ying Tsai,
Ching-Wen Hung, Chih-Hung Yen, and Wen-Chau Liu, “A study of composite-passivation
of an InGaP/GaAs heterojunction bipolar transistor,” J. Electrochem. Soc., vol. 153, pp. G938-G942, 2006. (EI, SCI) (239) Jung-Hui
Tsai, Shao-Yen Chiu, Wen-Shiung Lour, Der-Feng Guo, and Wen-Chau Liu, “Application of double camel-like gate
structures for a GaAs field-effect transistor with extremely high potential
barrier height and gate turn-on voltage,” Semicond.
Sci. Technol., vol. 21, pp. 1132-1138, 2006. (EI, SCI) (240) Yan-Ying Tsai, Ching-Wen Hung, Ssu-I Fu, Po-Hsien
Lai, Huey-Ing Chen, and Wen-Chau
Liu, “On the hydrogen sensing properties of a Pt-oxide-In0.5Al0.5P
Schottky diode,” Electrochemical and Solid-State Letters, vol. 9, pp.
H108-H110, 2006. (EI, SCI) (241) Chong-Yi
Lee, Chih-Hung Yen, Juh-Yuh Su, Hsen-Wen Lin, and Wen-Chau Liu, “Enhanced luminescence and reduced junction
temperature in n-type modulation-doped AlGaInP multiquantum-well
light-emitting diodes,” Jpn. J. Appl.
Phys., vol. 45, pp. 4000-4002, 2006. (EI, SCI) (242) Ssu-I Fu, Shiou-Ying Cheng, Tzu-Pin Chen, Po-Hsien
Lai, Yan-Ying Tsai, Ching-Wen Hung, Chih-Hung Yen, and Wen-Chau Liu,
“Comprehensive study of emitter ledge thickness of InGaP/GaAs HBTs,” IEEE Trans.
Electron Devices, vol. 53, pp. 2689-2695, 2006. (EI, SCI) (243) Ssu-I Fu, Shiou-Ying Cheng, Tzu-Pin Chen, Po-Hsien
Lai, Ching-Wen Hung, Kuei-Yi Chu, Li-Yang Chen, and Wen-Chau Liu,
“Further suppression of surface recombination of an InGaP/GaAs HBT by
Conformal Passivation,” IEEE Trans. Electron Devices, vol. 53,
pp. 2901-2907, 2006. (SCI) (244) Shiou-Ying Cheng, Ssu-I Fu, Tzu-Pin Chen,
Po-Hsien Lai, Rong-Chau Liu,
Kuei-Yi Chu, Li-Yang Chen, and Wen-Chau
Liu, “The effect of
sulfur treatment on the temperature-dependent performance of InGaP/GaAs HBTs,”
IEEE Trans. on Device and Materials Reliability, vol. 6, pp. 500-508,
2006. (EI, SCI) (245) Ching-Wen
Hung, Han-Lien Lin, Huey-Ing Chen, Yan-Ying Tsai, Po-Hsien Lai, Ssu-I Fu, and
Wen-Chau Liu, “A novel
Pt/In0.52Al0.48As Schottky diode-type hydrogen sensor,”
IEEE Electron Device Lett., vol.
27, pp. 951-954, 2006. (SCI) (246) Tzu-Pin Chen, Ssu-I Fu, Jung-Hui Tsai, Wen-Shiung
Lour, Der-Feng Guo, Shiou-Ying Cheng, and Wen-Chau Liu, “Temperature-dependent characteristics of an
emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor,” Semicond. Sci. Technol.,
vol. 21, pp. 1733-1737, 2006. (SCI) (247) Po-Hsien Lai, Ssu-I Fu, Ching-Wen Hung, Yan-Ying
Tsai, Tzu-Pin Chen, Chun-Wei Chen, and Wen-Chau Liu,
“Temperature effect on impact
ionization characteristics in metamorphic high electron mobility transistors,”
Appl. Phys. Lett., vol.
89, pp. 263503-1-263503-1, 2006. (EI, SCI) (248) Der-Feng Guo, Chih-Hung Yen, Jung-Hui Tsai, Wen-Shiung Lour, and Wen-Chau
Liu, “Characteristics
improvement for an n-p-n heterostructure optoelectronic switch by introducing
a wide-gap layer in the collector,” J. Electrochem. Soc., vol. 154, pp. H13-H15, 2007. (EI, SCI) (249) Meng-Kai
Hsu, Hon-Rung Chen, Shao-Yen Chiu, Wei-Tien Chen, Wen-Chau Liu, Jung-Hui
Tsai, and Wen-Shiung Lour, “Characteristics of mesa- and air-type
In0.5Al0.5As/In0.5Ga0.5As
metamorphic HEMTs with or without a buried gate,” Semicond. Sci. Technol., vol. 22, pp. 35-42, 2007. (250) Tzu-Pin Chen, Ssu-I Fu, Wen-Shiung Lour, Jung-Hui
Tsai, Der-Feng Guo, and Wen-Chau
Liu, “Temperature effect of a heterojunction bipolar transistor with
an emitter-edge-thinning structure,” Electrochemical and Solid-State
Letters, vol. 10, pp. H56-H58, 2007. (EI) (251) Po-Hsien Lai, Rong-Chau Liu, Ssu-I Fu, Yan-Ying
Tsai, Ching-Wen Hung, Tzu-Pin Chen, and Wen-Chau Liu,
“Effect of formal passivations on temperature-dependent
characteristics of high electron mobility transistors,” J. Electrochem. Soc., vol. 154, pp. H134-H138, 2007. (252) Ssu-I
Fu, Shiou-Ying Cheng, Po-Hsien Lai, Yan-Ying Tsai, Ching-Wen Hung, and Wen-Chau Liu, “On the emitter
ledge length effect for InGaP/GaAs heterojunction bipolar transistors,” Jpn. J. Appl. Phys., vol. 46, pp.
L74-L76, 2007. (253) Yan-Ying Tsai, Chin-Chuan Cheng, Po-Hsien Lai,
Ssu-I Fu, Ching-Wen Hong, Huey-Ing Chen, and Wen-Chau Liu,
“Comprehensive study of hydrogen sensing characteristics of Pd
metal-oxide-semiconductor (MOS) transistors with Al0.24Ga0.76As
and In0.49Ga0.51P Schottky contact layers,” Sens. Actuators B, vol. 120, pp. 687-693, 2007. (EI) (254) Ching-Wen Hung, Shiou-Ying Cheng, Kun-Wei Lin, Yan-Ying Tsai,
Po-Hsien Lai, Ssu-I Fu, and Wen-Chau Liu, “Hydrogen detection
by a GaAs-based transistor with a palladium (Pd) thin film gate structure,” Advanced Materials Research, vol. 15-17, pp. 275-280, 2007. (255) Po-Hsien Lai, Rong-Chau Liu, Ssu-I Fu, Yan-Ying
Tsai, Ching-Wen Hung, Tzu-Pin Chen, Chun-Wei Chen, and Wen-Chau Liu,
“Comprehensive study of thermal
stability performance of metamorphic heterostructure field-effect transistors
with Ti/Au and Au metal gates,” J. Electrochem. Soc., vol. 154, pp. H205-H209, 2007. (256) Po-Hsien Lai, Ssu-I Fu, Yan-Ying Tsai, Ching-Wen
Hung, Tzu-Pin Chen, and Wen-Chau
Liu, “Improved
characteristics of a formal-passivated pseudomorphic high electron mobility
transistor,” IEE Electron. Lett., vol. 43, pp. 54-55, 2007. (EI) (257) Tzu-Pin
Chen, Ssu-I Fu, Shiou-Ying Cheng, Jung-Hui Tsai, Der-Feng Guo, Wen-Shiung
Lour, and Wen-Chau Liu, “Surface treatment effect on
temperature-dependent properties of InGaP/GaAs heterobipolar
transistors,” J. Appl. Phys., vol. 101, pp. 034501-1-034501-5, 2007. (258) Ssu-I
Fu, Tzu-Pin Chen, Rong-Chau Liu, Shiou-Ying Cheng, Po-Hsien Lai, Yan-Ying
Tsai, Ching-Wen Hung, and Wen-Chau
Liu, “Influence of
emitter-edge-thinning thickness on the heterojunction bipolar transistor
performance,” J. Electrochem. Soc., vol. 154, pp. H289-H292, 2007. (259) Der-Feng Guo, Chih-Hung Yen, Jung-Hui Tsai, Wen-Shiung Lour, and Wen-Chau
Liu, “Investigation
of amplifying and switching characteristics in double heterostructure-emitter
bipolar transistors,” J. Electrochem. Soc., vol. 154, pp. H283-H288, 2007. (260) Ching-Wen Hung, Han-Lien Lin, Huey-Ing Chen,
Yan-Ying Tsai, Po-Hsien Lai, Ssu-I Fu, Hung-Ming Chuang, and Wen-Chau
Liu, “Comprehensive study of a Pd-GaAs high electron mobility
transistor (HEMT)-based hydrogen sensor,” Sens. Actuators B, vol. 122, pp. 81-88, 2007. (261) Po-Hsien Lai, Ssu-I Fu, Ching-Wen Hung, Yan-Ying Tsai,
Tzu-Pin Chen, Chun-Wei Chen, Yi-Wen Huang, and Wen-Chau Liu, “On
the temperature-dependent characteristics of metamorphic heterostructure
field-effect transistors with different Schottky gate metals,” Semicond. Sci. Technol.,
vol. 22, pp. 475-480, 2007. (262) Ssu-I Fu, Rong-Chau Liu, Shiou-Ying Cheng,
Po-Hsien Lai, Yan-Ying Tsai, Ching-Wen Hung, Tzu-Pin Chen, and Wen-Chau Liu, “Comprehensive
investigation on emitter ledge length of InGaP/GaAs heterojunction bipolar
transistors,” J. Vac. Sci.
Technol. B, vol. 25, pp. 691-696, 2007. (263) Shiou-Ying
Cheng, Ssu-I Fu, and Wen-Chau Liu,
“Improved performance of a dual-passivated heterojunction bipolar
transistor,” J. Vac. Sci. Technol. B, vol. 25, pp. 734-738, 2007. (264) Ching-Wen Hung, Hung-Chi Chang, Yan-Ying
Tsai, Po-Hsien Lai, Ssu-I Fu, Tzu-Pin Chen, Huey-Ing
Chen, and Wen-Chau Liu, “Study
of a new field-effect resistive hydrogen sensor based on a Pd/oxide/AlGaAs
transistor,” IEEE Trans.
Electron Devices, vol. 52, pp. 1224-1231, 2007. (265) Yan-Ying Tsai, Ching-Wen Hung, Ssu-I Fu, Po-Hsien
Lai, Hung-Chi Chang, Huey-Ing Chen, and Wen-Chau Liu,
“Comprehensive investigation of hydrogen-sensing properties of Pt/InAlP-based
Schottly diodes,” Sens. Actuators B, vol. 124, pp. 535-541, 2007. (266) Ching-Wen Hung, Kun-Wei Lin, Hung-Chi Chang,
Yan-Ying Tsai, Po-Hsien Lai, Ssu-I Fu, Tzu-Pin Chen, Huey-Ing Chen, and Wen-Chau
Liu, “Three-terminal-controlled field-effect resistive hydrogen sensor,” Sens. Actuators B, vol. 124, pp. 549-556, 2007. (267) Yan-Ying Tsai, Kun-Wei Lin, Huey-Ing Chen,
Ching-Wen Hung, Tzu-Pin Chen, and Wen-Chau Liu,
“Comprehensive analysis of
hydrogen sensing properties of a Pd-gate metal-semicondutor high electron mobility
transistor,” Appl. Phys. Lett., vol. 90, pp. 253503-1-253503-1, 2007. (268) Jung-Hui Tsai, C-M Li, Wen-Chau Liu, Der-Feng Guo, Shao-Yen
Chiu, and Wen-Shiung Lour, “Integration of n- and p-channel InGaP/InGaAs
doped-channel pseudomorphic HFETs,” Electron. Lett., vol. 43, pp. 732-734, 2007. (269) Wei-Tien Chen, Hon-Rung Chen, Shao-Yen
Chiu, Meng-Kai Hsu, Wen-Chau Liu, and Wen-Shiung Lour, “Study of a new field-effect resistive hydrogen sensor based on a
Pd/oxide/AlGaAs transistor,” IEEE
Trans. Electron Devices, vol. 54, pp. 2411-2417, 2007. (270) Ching-Wen Hung, Kun-Wei
Lin, Rong-Chau Liu, Yan-Ying Tsai, Po-Hsien Lai, Ssu-I Fu, Tzu-Pin Chen,
Huey-Ing Chen, and Wen-Chau Liu, “On the hydrogen sensing
properties of a Pd/GaAs transistor-type gas sensor in a nitrogen ambiance,” Sens.
Actuators B, vol. 125, pp. 22-29, 2007. (271) Yan-Ying
Tsai, Huey-Ing Chen, Ching-Wen Hung, Tzu-Pin Chen, Tsung-Han Tsai, Kuei-Yi (272) Tzu-Pin
Chen, Ching-Wen Hung, Kuei-Yi Chu, Li-Yang Chen, Tsung-Han Tsai, Shiou-Ying
Cheng, and Wen-Chau Liu, “On the temperature-dependent electron
impact ionizations in a step-graded InAlGaAs/InP collector double
heterojunction bipolar transistor,” Electrochem.
(273) Tsung-Han Tsai, Jun-Rui Huang, Kun-Wei Lin, Ching-Wen Hung,
Huey-Ing Chen, and Wen-Chau Liu, “Improved
hydrogen sensing properties of a Pt/SiO2/GaN Schottky diode,”
Electrochem. (274) Ching-Wen
Hung, Tsung-Han Tsai, Yan-Ying Tsai, Kun-Wei Lin, Huey-Ing Chen, Tzu-Pin
Chen, and Wen-Chau Liu, “A hydrogen sensor based on an InAlAs
material with a Pt catalytic thin film,” Phys. Scr., vol. T129, pp. 1-4, 2007. (275) Yang-Ying Tsai, Kun-Wei Lin, Huey-Ing
Chen, Ching-Wen Hung, Tzu-Pin Chen,
and Wen-Chau Liu, “Hydrogen sensing performance of a
Pt-oxide-GaN Schotty diode,” Electron.
Lett., vol. 43, pp. 1192-1193, 2007. (276)
Shao-Yen Chiu, Hon-Rung Chen, Wei-Tien Chen, Meng-Kai Hsu, Wen-Chau Liu, and Wen-Shiung
Lour, “Dynamic Performance of Dual-Emitter Phototransistor as
Electro-Optical Switch,” Jpn. J. Appl. Phys.,
vol. 46, pp. 7705-7707, 2007. (277) Shao-Yen Chiu, Hon-Rung
Chen, Wei-Tien Chen, Meng-Kai Hsu, Wen-Chau
Liu, Jung-Hui Tsai, and Wen-Shiung Lour, “Low-dark-current
heterojunction phototransistors with long-term stable passivation induced by
neutralized (NH4)(2)S treatment,” Jpn.
J. Appl. Phys., vol. 47, pp. 35-42, 2008. (278)
Tzu-Pin Chen, Shiou-Ying Cheng, Wei-Hsin Chen, Ching-Wen Hung,
Kuei-Yi Chu, Li-Yang Chen, Tsung-Han Tsai, and Wen-Chau Liu, “Characteristics of an InP/InGaAs
doubleheterojunction bipolar transistor (DHBT) with an InAlGaAs/InP composite
collector structure,” J. Electrochem. Soc., vol. 155, pp.
H136-H139, 2008. (279)
Tzu-Pin Chen, Shiou-Ying Cheng, Ching-Wen Hung, Kuei-Yi Chu,
Li-Yang Chen, Tsung-Han Tsai, and Wen-Chau Liu, “A new
InP/InGaAs double heterojunction bipolar transistor (DHBT) with a step-graded
InAlGaAs collector structure,” IEEE Electron Device Lett., vol. 29,
pp. 11-14, 2008. (280) Ching-Wen Hung, Tsung-Han Tsai, Huey-Ing
Chen, Yan-Ying Tsai, Tzu-Pin Chen, Li-Yang Chen, Kuei-Yi Chu, and Wen-Chau
Liu, “Temperature-dependent hydrogen sensing characteristics of a new
Pt/InAlAs Schottky diode-type sensor,” Sens. Actuators B, vol. 128,
pp. 574-580, 2008. (281) Tsung-Han Tsai, Jun-Rui Huang, Kun-Wei Lin, Yan-Ying Tsai, Wei-Chou
Hsu, Huey-Ing Chen, and Wen-Chau Liu, “Improved hydrogen sensing characteristics of a Pt/SiO2/GaN
Schottky diode,” Sens. Actuators B,
vol. 129, pp. 292-302, 2008. (282) Ching-Wen Hung,
Huey-Ing Chen, Tsung-Han Tsai, Chung-Fu Chang, Tzu-Pin Chen, Li-Yang Chen,
Kuei-Yi Chu, and Wen-Chau Liu, “Hydrogen-induced
effect on device performance of a Pd/GaAs-basd heterostructure field-effect
transistor (HFET),” J. Electrochem. Soc.,
vol. 155, pp. H243-H246, 2008. (283)
Shiou-Ying
Cheng, Ssu-I Fu, Kuei-Yi Chu, Tzu-Pin Chen, Wen-Chau Liu, and Li-Yang Chen, “Improved performances
of a two-step passivated heterojunction bipolar transistor,” Microelectron. Reliab., vol. 48, pp.
200-203, 2008. (284) Wen-Hsin Chen,
Tzu-Pin Chen, Chi-Jhung Lee, Ching-Wen
Hung, Kuei-Yi Chu, Li-Yang Chen, Tsung-Han Tsai, and Wen-Chau Liu, “Comparative
study on temperature-dependent characteristics of InP/InGaAs single- and
double-heterojunction bipolar transistors,” J. Vac. Sci. Technol. B, vol. 26, pp. 618-623, 2008. (285) Shiou-Ying
Cheng, Kuei-Yi Chu, Li-Yang Chen, Lu-An Chen, and Wen-Chau Liu, “Characteristics
of an InGaP/AlXGa1-XAs/GaAs composite-emitter
heterojunction bipolar transistor (CEHBT),” J. Vac. Sci. Technol. B, vol. 26, pp. 627-631, 2008. (286)
Jung-Hui Tsai, Wen-Chau
Liu, Der-Feng Guo, Yu-Chi Kang, Shao-Yen Chiu, Wen-Shiung Lour, “Electrical properties of InP/InGaAs
pnp heterostructure-emitter bipolar transistor,” Semiconductors, vol. 3, pp. 346-349, 2008. (287)
Kuei-Yi Chu, Shiou-Ying Cheng, Tzu-Pin Chen, Ching-Wen Hung,
Li-Yang Chen, Tsung-Han Tsai, Wen-Chau
Liu, Lu-An Chen, “Influnce of
emitter-ledge thickness on the surface-recombination mechanism of InGaP/GaAs
heterojunction bipolar transistor,” Superlatt.
Microstruct., vol. 43, pp.
368-374, 2008. (288) Tsung-Han Tsai, Huey-Ing Chen, Kun-Wei Lin, Ching-Wen Hung, Chia-Hao
Hsu, Tzu-Pin Chen, Li-Yang Chen, Kuei-Yi Chu, Chung-Fu Chang, and Wen-Chau Liu, “On the Hydrogen
Sensing Characteristics of a Pd/AlGaN/GaN Schottky Diode,” Appl. Phys.
Express, vol. 1, pp.
041102-1-041102-3, 2008. (289) Li-Yang Chen, Shiou-Ying Cheng, Kuei-Yi (290) Der-Feng Guo, Jung-Hui Tsai, Tzu-Yen Weng, Chih-Hung Yen, Po-Hsien
Lai, Ssu-I Fu, Ching-Wen Hung, and Wen-Chau
Liu, “Investigation on heterostructural optoelectronic switches” Surf. Rev. Lett., vol. 15, pp. 139-144, 2008.
(291)
Chih-Hung Yen, Ching-Wen
Hung, Huey-Ing Chen, Tsung-Han Tsai, Tzu-Pin Chen,
Li-Yang Chen, Kuei-Yi Chu, and Wen-Chau
Liu, “On the hydrogen sensing behaviors of an
InAlAs-based Schotty Diode with a thin Pt catalytic metal,” Jpn. J. Appl. Phys., vol. 47, pp.
2862-2864, 2008. (292) Li-Yang Chen, Shiou-Ying Cheng, Kuei-Yi
Chu, Ching-Wen Hung, Tzu-Pin Chen,
Tsung-Han Tsai, and Wen-Chau
Liu, “Improved performance of
non-annealed ohmic-recess metamorphic high electron mobility transistor,” Electron. Lett., vol. 44, pp. 771-772, 2008. (293) Ching-Wen Hung, Tsung-Han Tsai, Huey-Ing
Chen, Yan-Ying Tsai, Tzu-Pin Chen, and Wen-Chau Liu, “Further
investigation of a hydrogen-sensing Pd/GaAs heterostructure field-effect
transistor (HFET),” Sens. Actuators B, vol. 132, pp. 587-592,
2008. (294) Tzu-Pin Chen, Wei-Hsin
Chen, Chi-Jhung Lee, Kuei-Yi Chu, Li-Yang Chen, Ching-Wen Hung, Tsung-Han
Tsai, Shiou-Ying Cheng, and Wen-Chau
Liu, “Temperature-dependent
characteristics of an InP/InGaAs double heterojunuction bipolar transistor
with a step-graded InAlGaAs collector” J. Appl. Phys., vol. 103, pp.
114506-1-114506-5, 2008. (295) Tsung-Han Tsai, Huey-Ing Chen, Kun-Wei Lin, Ching-Wen Hung, Chia-Hao
Hsu, Li-Yang Chen, Kuei-Yi Chu, and Wen-Chau
Liu, “Comprehensive Study on Hydrogen
sensing properties of a Pd-AlGaN based Schottky diode,” Int. J. Hydog.
Engergy, vol. 33, pp. 2986-2992, 2008. (296) Yan-Ying Tsai, Kun-Wei Lin, Huey-Ing,
Ching-Wen Hung, Tzu-Pin Chen, Tsung-Han Tsai, Li-Yang Chen, Kuei-Yi Chu, and Wen-Chau
Liu, “Comprehensive
study of a Pd/Al0.24Ga0.76As-based field-effect-transistor-type
hydrogen sensor,” Sens.
Actuators B, vol. 133, pp. 128-134, 2008. (297) Yan-Ying Tsai, Kun-Wei Lin, Huey-Ing Chen,
I-Ping Liu, Ching-Wen Hung, Tzu-Pin Chen, Tsung-Han Tsai, Li-Yang Chen,
Kuei-Yi Chu, and Wen-Chau Liu, “Hydrogen sensor properties of a Pt-oxide-GaN Schottky diode,” J.
Appl. Phys., vol. 104, pp. 024515-1-024515-6, 2008. (298) Yan-Ying Tsai, Kun-Wei
Lin, Huey-Ing Chen, I-Ping Liu, Ching-Wen Hung, Tzu-Pin Chen, Tsung-Han Tsai,
Li-Yang Chen, Kuei-Yi Chu, and Wen-Chau Liu, “Transient response of a transistor-based hydrogen sensor,” Sens. Actuators B, vol. 134, pp.
750-754, 2008. (299) Li-Yang Chen, Shiou-Ying Cheng, Tzu-Pin Chen, Kuei-Yi Chu, Tsung-Han
Tsai, Yi-Chun Liu, Xin-Da Liao, and Wen-Chau
Liu, “On an InGaP/InGaAs Double Channel Pseudomorphic High Electron
Mobility Transistor with Graded Triple δ-Doped Sheets,” IEEE Trans.
Electron Devices, vol. , pp.
3310-3313, 2008. (300) Li-Yang Chen , Shiou-Ying Cheng , Tzu-Pin Chen , Tsung-Han Tsai ,
Yi-Chun Liu, Xin-Da Liao, and Wen-Chau
Liu, “Temperature-Dependent
Characteristics of a Pseudomorphic High Electron Mobility Transistor (PHEMT)
with Graded Triple Delta-Doped Sheets,” J.
Electrochem. Soc., vol. 155, H. 955, 2008. (301) Tsung-Han Tsai, Huey-Ing Chen, I-Ping Liu, Ching-Wen Hung, Tzu-Pin
Chen, Li-Yang Chen, Yi-Chun Liu, and Wen-Chau
Liu, “Investigation
on a Pd-AlGaN/GaN Schottky Diode-Type Hydrogen Sensor with Ultrahigh Sensing
Responses,” IEEE Trans. Electron Devices, vol. 55, pp. 3575-3581, 2008. (302) Li-Yang Chen, Shiou-Ying Cheng, Wen-Shiung Lour, Jung-Hui Tsai,
Der-Feng Guo, Tsung-Han Tsai, Tzu-Pin Chen, Yi-Chun Liu, and Wen-Chau Liu, “Effect of the
non-annealed ohmic-recess approach on temperature-dependent properties of a
metamorphic high electron mobility transistor,” Semicond. Sci. Technol., vol. 23, pp. 125041, 2008. (303) Chih-Hung Yen, Yi-Jung Liu, Nan-Yi Huang, Kuo-Hui Yu, Tzu-Pin Chen,
Li-Yang Chen, Tsung-Han Tsai, Chong-Yi Lee, and Wen-Chau Liu, “A New AlGaInP
Multiple-Quantum-Well Light-Emitting Diode With a Thin Carbon-Doped GaP
Contact Layer Structure,” IEEE Photonics Technol. Lett., vol. 20, pp. 1923-1925,
2009. (SCI) (304) Tzu-Pin Chen, Chi-Jhung Lee, Shiou-Ying Cheng, Wen-Shiung Lour,
Jung-Hui Tsai, Der-Feng Guo, Ghun-Wei Ku, and Wen-Chau Liu, “Effect of Emitter Ledge Thickness on
InGaP/GaAs Heterojunction Bipolar Transistors,” Electrochem. Solid-State
Lett., vol. 12, pp. H41-H43,
2009. (SCI) (305) Tzu-Pin Chen, Chi-Jhung Lee, Wen-Shiung Lour*, Der-Feng Guo, Jung-Hui
Tsai, and Wen-Chau Liu, “On
the Breakdown Behaviors of InP/InGaAs Based Heterojunction Bipolar
Transistors (HBTs),” Solid-State Electron., vol. 53, pp. 190-194,
2009. (EI) (306) Chung-Fu Chang, Tsung-Han Tsai, Huey-Ing Chen, Kun-Wei Lin, Tzu-Pin
Chen, Li-Yang Chen, Yi-Chun Liu, and Wen-Chau
Liu, “Hydrogen Sensing Properties of a Pd/SiO2/AlGaN-Based
MOS Diode,” Electrochem. Commun., vol. 11, pp. 65-67, 2009. (307) Jung-Hui Tsai, Shao-Yen Chiu, Wen-Shiung Lour, Wen-Chau Liu, Chien-Ming Li, Ning-Xing Su, Yi-Zhen Wu,
Yin-Shan Huang, “Microwave complementary doped-channel field-effect,” Superlattices Microstruct., vol. 45,
pp. 33-38, 2009. (308) Tsung-Han Tsai,
Huey-Ing Chen, Chung-Fu Chang, Po-Shun Chiu, Yi-Chun Liu, Li-Yang Chen,
Tzu-Pin Chen, and Wen-Chau Liu,
“Hydrogen Sensing Properties of a Metamorphic High Electron Mobility
Transistor,” Appl. Phys. Lett.,
vol. 94 , pp. 012102 , 2009. (SCI) (309) Tsung-Han Tsai, Huey-Ing Chen, Kun-Wei Lin, Yaw-Wen Kuo, Chung-Fu
Chang, Ching-Wen Hung, Li-Yang Chen, Tzu-Pin Chen, Yi-Chun Liu, and Wen-Chau Liu, “SiO2
Passivation Effect on the Hydrogen Adsorption Performance of a Pd/AlGaN-Based
Schottky Diode,” Sens. Actuators B, vol. 136, pp. 338-343, 2009. (310) Chih-Hung Yen, Yi-Jung Liu, Kuo-Hui Yu, Pei-Ling Lin, Tzu-Pin Chen,
Li-Yang Chen, Tsung-Han Tsai, Nan-Yi Huang, Chong-Yi Lee, and Wen-Chau Liu, “On an
AlGaInP-Based Light Emitting Diode with an Indium-Tin-Oxide (ITO) Direct
Ohmic Contact Structure,” IEEE Electron Device Lett., vol. 30, pp. 359-361, 2009. (311) Li-Yang Chen, Huey-Ing Chen, Shiou-Ying Cheng, Tzu-Pin Chen,
Tsung-Han Tsai, Yi-Chun Liu, Yi-Wen Huang, Chien-Chang Huang, and Wen-Chau Liu, “On the
Pseudomorphic High Electron Mobility Transistors (PHEMTs) with a
Low-Temperature Gate Approach,” IEEE Electron Device Lett., vol. 30, pp. 325-327, 2009. (312) Jung-Hui Tsai, Wen Shiung Lour, Wen-Chau
Liu, “InGaP/GaAs/InGaAs delta-doped p-channel field-effect transistor
with p(+)/n(+)/p camel-like gate structure,” Electron.
Lett., vol. 45, pp. 572-573,
2009. (313) Li-Yang
Chen, Huey-Ing Chen, Shiou-Ying Cheng, Tzu-Pin Chen, Tsung-Han Tsai, Yi-Jung
Liu, Yi-Wen Huang, Chien-Chang Huang, Wen-Chau
Liu “Temperature-Dependent Characteristics of a Low Temperature
Deposition Approach on a Pseudomorphic High Electron Mobility Transistor,” Electrochem.
Solid-State Lett., vol. 12, pp.
H211-H213, 2009. (314) Chih-Hung Yen, Yi-Jung Liu, Tzu-Pin Chen, Li-Yang Chen, Tsung-Han
Tsai, and Wen-Chau Liu,
“Study of an AlGaInP-Based Light-Emitting Diode With a Modulation-Doped
Multiquantum-Well (MD-MQW) Structure,” IEEE Photonics Technol. Lett.,
vol. 21, pp. 609-611, 2009. (315) Tsung-Han Tsai, Huey-Ing Chen, Kun-Wei Lin, Yaw-Wen Kuo, Po-Shun
Chiua, Chung-Fu Chang, Li-Yang Chen, Tzu-Pin Chen, Yi-Jung Liu, Wen-Chau Liu, “On a Pd/InAlAs
metamorphic high electron mobility transistor (MHEMT)-based hydrogen sensor,”
Sens. Actuators B, vol.
139, pp. 310-316, 2009. (316) Li-Yang Chen, Huey-Ing Chen, Chien-Chang Huang, Yi-Wen Huang,
Tsung-Han Tsai, Yi-Chun Liu, Tai-You Chen, Shiou-Ying Cheng, and Wen-Chau Liu, “Characteristics
of an electroless plated-gate transistor,” Appl. Phys. Lett., vol. 95,
p. 052105, 2009. (317) Chih-Hung Yen, Yi-Jung Liu, Tzu-Pin Chen, Li-Yang Chen, Tsung-Han
Tsai, and and Wen-Chau Liu,
“On an AlGaInP Light-Emitting Diode With a Modulation-Doped Multiquantum-Well
(MD-MQW) Structure,” IEEE J. Quantum Electron., vol. 45, pp. 367-372, 2009. (318)
Yi-Jung Liu, Chih-Hung Yen, Kuo-Hui
Yu, Tzu-Pin Chen, Li-Yang Chen, Tsung-Han Tsai, and Wen-Chau Liu, “Characteristics of a low-damage GaN-Based light-emitting
diode using a KOH-treated wet-etching approach,” Jpn. J. Appl. Phys.,
vol. 48, pp. 082104, 2009. (319) Tzu-Pin Chen, Chi-Jhung Lee, Li-Yang Chen, Tsung-Han Tsai, Yi-Jhung
Liu, Chien-Chang Huang, Tai-You Chen, Shiou-Ying Cheng, and Wen-Chau Liu, “Comparative
Study of InGaP/GaAs Heterojunction Bipolar Transistors (HBTs) with Different
Base Surface Treatments,” Superlatt.
Microstruct., vol. 46, pp. 715-722,
2009. (320) Yi-Jung Liu, Chih-Hung Yen, Li-Yang Chen, Tsung-Han Tsai, Tsung-Yuan
Tsai and Wen-Chau Liu,
"On a GaN-based light-emitting diode with a p-GaN/i-InGaN superlattice
structure," IEEE Electron Device Lett., vol. 30, pp. 1149-1151,
2009. (321) Yi-Jung Liu, Chih-Hung Yen, Chia-Hao Hsu, Kuo-Hui Yu, Li-Yang Chen,
Tsung-Han Tsai, and Wen-Chau Liu,
“Impact of an indium oxide/indium-tin-oxide mixed structure for GaN-based
light-emitting diodes,” Opt. Rev., vol. 16 , pp. 575-577, 2009. (322) Li-Yang Chen, Shiou-Ying Cheng, Chien-Chang
Huang, Tzu-Pin Chen, Tsung-Han Tsai, Yi-Jung Liu, Tai-You Chen, Chi-Hsiang
Hsu, and Wen-Chau Liu, “Thermal-stability performance of a
metamorphic high electron mobility transistor (MHEMT) with non-annealed Ohmic
contacts,” Solid-State Electron, vol. 54, pp. 279-282, 2010. (323) Yi-Jung
Liu, Chih-Hung Yen, Kuo-Hui Yu, Pei-Ling Lin, Li-Yang Chen, Tsung-Han Tsai,
Tsung-Yuan Tsai, and Wen-Chau Liu,
“Characteristics of an AlGaInP-Based light emitting diode with an
indium-tin-oxide (ITO) direct ohmic contact structure,” IEEE J. Quantum
Electron., vol. 46 , pp. 246-252, 2010. (324) Yi-Jung Liu, Tsung-Yuan Tsai, Chih-Hung Yen, Li-Yang Chen,
Tsung-Han Tsai, Chien-Chang
Huang, Tai-You Chen, Chi-Hsiang Hsu, and
Wen-Chau Liu, “Performance investigation of GaN-based light-emitting
diodes with tiny misorientation of sapphire substrates,” Opt. Express,
vol. 18, pp. 2729-2742, 2010. (325) Li-Yang Chen, Huey-Ing Chen, Shiou-Ying Cheng, Tsung-Han Tsai,
Yi-Chun Liu, Chien-Chang Huang, Tai-You Chen, Chi-Hsiang Hsu, and Wen-Chau Liu, “Performance of
a GaAs based pseudomorphic transistor with the electroless-plated surface
treated gate,” J. Electrochem. Soc., vol. 157, pp.
H408-H413, 2010. (326) Tsung-Yuan Tsai, Yi-Jung
Liu, Chih-Hung Yen, and Wen-Chau
Liu, “On an AlGaInP
multiple-quantum-well light emitting diode with a thin carbon-doped GaP
contact layer structure,” J.
Electrochem. Soc., vol. 157, pp. H459-H462, 2010. (327) Yi-Jung Liu, Tsung-Yuan Tsai, Chih-Hung Yen, Li-Yang Chen, Tsung-Han
Tsai, and Wen-Chau Liu,
“Characteristics of a GaN-based light-emitting diode with an inserted
p-GaN/i-InGaN superlattice structure,” IEEE J. Quantum Electron., vol.
46, pp. 492-498, 2010. (328) Tsung-Han Tsai,
Huey-Ing Chen, Tai-Yu Chen, Li-Yang Chen, Yi-Jung Liu, Chien-Chang Huang,
Kai-Siang Hsu, and Wen-Chau Liu,
“Hydrogen Sensing Properties of a Pd/Oxide/InAlAs Metamorphic-Based
Transistor,” Int. J. Hydog. Engergy,
vol. 35, pp. 3903-3907,
2010. (329) Yi-Jung
Liu, Tsung-Yuan Tsai, Kuo-Hui Yu, Der-Feng Guo, Li-Yang Chen, Tsung-Han Tsai,
Wen-Chau Liu, “A low damage
GaN-based light-emitting diode with textured/inclined sidewalls and an
air-buffer layer,” DISPLAYS, vol. 31, pp. 111-114, 2010. (330) Jung-Hui
Tsai, Wen-Shiung Lour, Chia-Hong Huang, Ning-Feng Dale, Yuan-Hong Lee,
Jhih-Syuan Sheng, Wen-Chau Liu,
“Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel
field-effect transistor,” Solid-State Electron., vol. 54, pp. 275-278, 2010. (331) Tsung-Han
Tsai, Huey-Ing Chen, Kun-Wei Lin, Tai-You Chen, Chien-Chang Huang, Kai-Siang
Hsu, and Wen-Chau Liu, “A
Hydrogen Sensor Based on a Metamorphic High Electron Mobility Transistor
(MHEMT),” Microelectron. Reliab., vol. 50, pp. 734-737, 2010. (332) Yi-Jung Liu, Der-Feng Guo,
Li-Yang Chen, Tsung-Han Tsai, Chien-Chang Huang, Tai-You Chen,
Chi-Hsiang Hsu and Wen-Chau Liu,
“Investigation of electrostatic
discharge performance of GaN-based light-emitting diodes with
naturally-textured p-GaN contact layers grown on miscut sapphire substrates,”
IEEE Trans. Electron Devices, vol.
57, pp. 2155-2162, 2010. (333) Yi-Jung Liu, Tsung-Yuan
Tsai, Chih-Hung Yen, Li-Yang Chen, Tsung-Han Tsai, Chien-Chang Huang, Tai-You
Chen, Chi-Hsiang Hsu, and Wen-Chau
Liu, “Electrostatic discharge performance of GaN-based light-emitting
diodes with naturally textured p-GaN Layers grown on vicinal sapphires,” Electrochem. Solid State Lett., vol.
13, pp. h406-h408, 2010. (334) Jung-Hui
Tsai, Wen-Shiung Lour, Der-Feng Guo, Wen-Chau
Liu, Yi-Zhen Wu, and Ying-Feng Dai, “InP/GaAsSb Type-II DHBTs with
GaAsSb/lnGaAs Superlattice-Base and GaAsSb Bulk-Base Structures,” Semiconductors.,
Vol. 44, pp. 1096-1100, 2010. (335) Chien-Chang
Huang, Yi-Jung Liu, Tai-You Chen, Chi-Shiang Hsu, Chung-I Kao, and Wen-Chau Liu, “Improved
Thermal Stability Performance of a Metamorphic High Electron Mobility
Transistor (MHEMT) with a Double δ-Doped Structure,” Electrochem. (336) Yi-Jung
Liu, Chien-chang Huang, Tai-you Chen, Chi-hsiang Hsu, Shiou-ying Cheng,
Kun-wei Lin, Jian-kai Liou, and Wen-chau
Liu, “Improved performance of GaN-based light-emitting diodes by
using short-period superlattice structures,” Prog. Nat. Sci., vol. 20,
pp. 70-75, 2011. (337) Yi-Jung
Liu, Huey-Ing Chen, Shiou-Ying Cheng, Kun-Wei Lin, and Wen-Chau Liu, “Investigation of GaN-Based Light-Emitting
Diodes Grown on Vicinal Sapphire Substrates,” Physica Status
Solidi. (c),
vol. 8, pp. 1664-1668, 2011. (338) Yi-Jung
Liu, Chien-Chang Huang, Tai-You Chen, Chi-Shiang Hsu, Jian-Kai Liou, and Wen-Chau Liu, “Improved
performance of an InGaN-based light-emitting diode with a p-GaN/n-GaN barrier
junction,” IEEE J. Quantum Electron., vol. 47, pp. 755-761, 2011. (339) Tai-You
Chen, Huey-Ing Chen, Yi-Jung Liu, Chien-Chang Huang, Chi-Shiang Hsu, Chung-Fu
Chang, and Wen-Chau Liu,
“Ammonia Sensing Characteristics of a Pt/AlGaN/GaN Schottky Diode,” Sens.
Actuators B., vol. 155, pp. 347-350,
2011. (340) Tai-You
Chen, Huey-Ing Chen, Yi-Jung Liu, Chien-Chang Huang, Chi-Shiang Hsu, Chung-Fu
Chang, and Wen-Chau Liu,
“Ammonia sensing properties of a Pt/AlGaN/GaN Schottky diode,” IEEE Trans.
Electron Devices., vol. 58, pp. 1541-1547, 2011. (341) Chien-Chang
Huang, Huey-Ing Chen, Shiou-Ying Cheng, Li-Yang Chen, Tsung-Han Tsai, Yi-Chun
Liu, Tai-You Chen, Chi-Hsiang Hsu, and Wen-Chau
Liu, “On the Characteristics of an Electroless Plated (EP)-Based
Pseudomorphic High Electron Mobility Transistor (PHEMT),” Solid-State
Electron., vol. 61, pp. 13-17, 2011. (342) Tai-You
Chen, Huey-Ing Chen, Chien-Chang
Huang, Chi-Shiang Hsu, Po-Shun Chiu, Po-Cheng Chou, and Wen-Chau Liu, “Improved hydrogen-sensing performance of a
Pd/GaN Schottky diode with a surface plasma treatment approach,” Sens.
Actuators B., 2011 (to be published). (343) Chien-Chang Huang, Tai-You Chen, Chi-Shiang Hsu, Chun-Chia Chen,
Chung-I Kao, and Wen-Chau Liu,
“Performance of Metamorphic Transistors with d-Doped Structures,” J. Phys.
Chem. C, vol. 115, pp. 13476-13479, 2011. (344) Yi-Jung Liu, Chien-Chang Huang, Tai-You Chen, Chi-Shiang Hsu,
Jian-Kai Liou, Tsung-Yuan Tsai, and Wen-Chau
Liu, “Implementation of an indium-tin-oxide (ITO) direct-Ohmic
contact structure on a GaN-based light emitting diode,” Optics Express,
vol. 19, pp. 14662-14670, 2011. (345) Yi-Jung
Liu, Chien-Chang Huang, Tai-You Chen, Chi-Shiang Hsu, Tsung-Yuan Tsai, and Wen-Chau Liu, “On a GaN-Based
Light Emitting Diode with an Indium-Tin-Oxide (ITO) Direct-Ohmic Contact
Structure,” IEEE Photonics Technol. Lett., vol.
23, pp. 1037-1039, 2011. (346) Yi-Jung Liu, Der-Feng Guo,
Kuei-Yi Chu, Shiou-Ying Cheng, Jian-Kai Liou, Li-Yang Chen, Tsung-Han Tsai,
Chien-Chang Huang, Tai-You Chen, Chi-Shiang Hsu, Tsung-Yuan Tsai, and Wen-Chau Liu, “Improved
current-spreading performance of an InGaN-based light-emitting diode with a
clear p-GaN/n-GaN barrier junction,” Displays,
2011 (to be published). (347)
Jun-Rui Huang, Wei-Chou
Hsu, Yeong-Jia
Chen, Tzong-Bin Wang, Huey-Ing Chen, and Wen-Chau
Liu, “Investigation
of Hydrogen-Sensing Characteristics of a Pd/GaN Schottky Diode,” IEEE Sens. J., vol. 11,
pp. 1194-1200, 2011. (348)
Chien-Chang Huang,
Tai-You Chen, Chi-Shiang Hsu, Chun-Chia Chen, Chung-I Kao, and Wen-Chau Liu, “Comprehensive
Temperature-Dependent Studies of Metamorphic High Electron Mobility
Transistors (MHEMTs) with Double and Single δ-Doped Structures,” IEEE Trans. Electron Devices, vol. 58,
pp. 4276-4282, 2011. (349)
Cheng-Wei Lin,
Huey-Ing Chen, Tai-You Chen, Chien-Chang Huang, Chi-Shiang Hsu, and Wen-Chau Liu, “Ammonia Sensing
Characteristics of Sputtered Indium Tin Oxide (ITO) Thin Films on Quartz and
Sapphire Substrates,” IEEE Trans. Electron Devices, vol. 58, pp. 4407-4413, 2011. (350)
Cheng-Wei Lin,
Huey-Ing Chen, Tai-You Chen, Chien-Chang Huang, Chi-Shiang Hsu, Rong-Chau
Liu, and Wen-Chau Liu, “On an Indium-Tin-Oxide
Thin Film Based Ammonia Gas Sensor,” Sens. Actuators B., vol. 160, pp. 1481-1484, 2011. (351)
Tai-You Chen, Huey-Ing
Chen, Chien-Chang Huang, Chi-Shiang Hsu, Po-Shun Chiu, Po-Cheng Chou,
Rong-Chau Liu, and Wen-Chau Liu,
“Hydrogen-Sensing
Characteristics of a Pd/GaN Schottky Diode With a Simple Surface Roughness
Approach,” IEEE Trans.
Electron Devices, vol. 58, pp. 4079-4086, 2011. (352)
Chi-Shiang Hsu,
Kun-Wei Lin, Huey-Ing Chen, Tai-You Chen, Chien-Cheng Huang, Po-Cheng Chou,
Rong-Chau Liu, and Wen-Chau Liu,
“On a Heterostructure
Field-Effect Transistor (HFET) Based Hydrogen Sensing System,” Int. J. Hydrog.
Energy, vol.36, pp. 15906-15912, 2011. (353)
Chien-Chang Huang,
Chun-Chia Chen, Jian-KaI Liou, Po-Cheng Chou, Huey-Ing Chen, Shiou-Ying
Cheng, and Wen-Chau Liu, “Performance of a
GaAs-Based Pseudomorphic High Electron Mobility Transistor (PHEMT) with an
Electroless-Plated Treated Gate,” MATER SCI Forum, vol. 694, pp. 891-895, 2011. (354)
Tai-You Chen,
Jian-Sheng Wu, Chi-Shiang Hsu, Po-Cheng Chou, Huey-Ing Chen, Kun-Wei Lin, and
Wen-Chau Liu, “ZnO Nanorods Based
Ammonia Gas Sensors with Interdigitized Electrodes,” MATER SCI Forum, vol. 694, pp. 155-159,
2011. (355)
Jian-Kai Liou, Yi-Jing
Liu, Shiou-Ying Cheng, Po-Cheng Chou, Chiun-Chia Chen, and Wen-Chau Liu, “Performance on
GaN-Based Light-Emitting Diodes with Different Substrate Tilt Angles,” MATER SCI Forum,
vol. 694, pp. 842-846, 2011. (356)
Kuei-Yi Chu,
Shiou-ying Cheng, Meng-Hsueh Chiang, Yi-Jung Liu, Chien-Chang Huang, Tai-You
Chen, Chi-Shiang Hsu, Wen-Chau Liu,
Wen-Yu Cheng, and Bin-Cian Lin, “Effect of Graded Triple Delta-Doped Sheets on the Performance of GaAs
Based Dual Channel Pseudomorphic High Electron Mobility Transistors,” Superlatt. Microstruct., vol. 50, pp. 289-295, 2011. (357)
Kuei-Yi Chu,
Shiou-Ying Cheng, Meng-Hsueh Chiang, Yi-Jung Liu, Chien-Chang Huang, Tai-You
Chen, Chi-Shiang Hsu, Wen-Chau Liu,
Wen-Yu Cheng, and Bin-Cian Lin, “Comprehensive Study of InGaP/InGaAs/GaAs Dual Channel Pseudomorphic
High Electron Mobility Transistors,” Solid-State Electron., 2011 (to be published). (358)
Kuei-Yi (359)
Chien-Chang Huang,
Huey-Ing Chen, Tai-You Chen, Chi-Shiang Hsu, Chun-Chia Chen, Hsuan-Sheng
Chang, and Wen-Chau Liu, “On an
Electroless-Plating (EP) Gate Metamorphic Transistor,” Electrochem. (360)
Chi-Shiang Hsu,
Huey-Ing Chen, Chung-Fu Chang, Tai-You Chen, Chien-Chang Huang, Po-Cheng
Chou, and Wen-Chau Liu, “On the Hydrogen
Sensing Characteristics of a Pd/AlGaN/GaN Heterostructure Field-Effect
Transistor (HFET),” Sens. Actuators B.,
2012. (to be published) (361) Tai-You Chen, Huey-Ing Chen, Chi-Shiang Hsu,
Chien-Chang Huang, Chung-Fu Chang, Po-Cheng Chou, and Wen-Chau Liu, “On a Ammonia Gas Sensor Based on a Pt/AlGaN Heterostructure
Field-Effect Transistor,” IEEE Electron Devices Lett.,
2012. (to be published) B.
Conference papers (1)
W. C. Liu, S. J. Wang, C. Y. Chang,
and B. D. Liu, “The V-grooved etching enchanced high voltage power
transistor,” Proc. Electronic Devices
and Materials Symposium, (2)
W. C. Liu, C. Y. Chang, and W. C.
Hsu, “A new technique for high voltage power transistor,” Proc. NCKU/AAS Int. Symposium, Taiwan,
pp. 1419-1441, 1981. (EI) (3)
W.
C. Hsu, C. Y. Chang, and W. C. Liu,
“Deep level transient spectroscopic study in a-Si-H thin film devices,” Proc. NCKU/AAS Int. Symposium, Taiwan,
R.O.C., pp. 1472-1486, 1981. (4)
C.
Y. Chang, Y. K. Fang, and W. C. Liu,
W. C. Hsu, and Y. C. Chen, “Deposition and growth mechanism of plasma
deposited a-Si-H films,” Proc. Int.
Optoelectronics Workshop, Tainan, Taiwan, pp. 212-228, 1981. (5)
C.
E. Zah, C. Y. Chang, Y. K. Fang, W.
C. Liu, W. C. Hsu, and Y. C. Chen, “A study of fabrication of IL/MIS
solar cell,” Proc. Int. Optoelectronics
Workshop, Tainan, Taiwan, pp. 280-299, 1981. (6)
C.
Y. Chang, W. C. Hsu, T. Y. Chen, W.
C. Liu, Y. K. Fang,, and R. M. Chen, “The analysis of exponential
transients in deep-level periodic transient spectroscopy,” ECS Conference Extended Abstracts, 82-2,
pp. 369-370, 1982. (EI) (7)
C.
Y. Chang, W. C. Liu, W. C.
Hsu, Y. K. Fang, and R. C. Liu, “Depletion layer characteristics near the
surface of V-grooved high voltage p-n junction,” ECS Conference Extended Abstracts, 82-2, pp. 372, 1982. (EI) (8)
C.
Y. Chang, W. C. Liu, W. C. Hsu,
Y. K. Fang, and R. C. Liu, “A modeling and simulation for breakdown voltage
of V-grooved bipolar device,” Proc.
AMSE Conference, 4, pp. 42-43, 1982. (9)
C.
Y. Chang, W. C. Liu, W. C.
Hsu, and Y. K. Fang, “A new technique for high voltage devices,” ECS Conference Extended Abstracts, 82-1,
pp. 293-294, 1982. (10)
C.
Y. Chang, K. Y. Chang, Y. H. Wang, W.
C. Liu, and S. A. Liao, “Defects in GaAs and AlXGa1-XAs
grown by MBE,” ECS Conference Extended
Abstracts, vol. 84-2, pp. 644-645, 1984. (EI) (11)
C.
Y. Chang, Y. H. Wang, W. C. Liu,
and S. A. Liao, “Characterization of Si-doped GaAs MBE grown films,” Proc. Electronic Devices and Materials
Symposium, Taiwan, pp. 413-415, 1984. (12)
S.
A. Liao, W. C. Liu, Y. H.
Wang, C. Y. Chang, and K. Y. Cheng, “Be-doped GaAs by molecular beam
epitaxy,” Proc. Annual Convention of the Chinese Institute
of Material Science, pp. 220-223, 1985. (13)
C.
Y. Chang, W. C. Liu, S. A.
Liao, and Y. H. Wang, “MBE grown n+-i-(p+)-i-n+ GaAs U-groove
barrier transistors,” Int. Symp. GaAs
and Related Compounds, (14)
Y.
H. Wang, W. C. Liu, C. Y.
Chang, M. S. Jame, and S. A. Liao, “Epitaxy of arsenic-pressure-controlled
MBE-grown GaAs layers,” Material
Research Symposium, H6.8, (15)
C.
Y. Chang, W. C. Liu, M. S.
Jame, and Y. H. Wang, “The new high speed devices: The TEG-base transistor,” Proc. 18th International conference on
Solid state Devices and Materials, Tokyo, Japan, pp. 355-357, 1986. (EI) (16)
C.
Y. Chang, W. C. Liu, Y. H.
Wang, and S. M. Sze, “The new high speed devices: The barrier transistor and
the TEG-base transistor,” Extended
Abstracts of Compound Semiconductor Science & Technology Symposium,
Hsinchu, Taiwan, pp. 50-54, 1986. (17)
C.
Y. Chang, W. C. Liu, Y. H.
Wang, and M. S. Jame, “The MBE grown GaAs quantum well base hot electron
transistor,” Proc. Electronic Devices
and Materials Symposium, Tainan, Taiwan, pp. 107-109, 1986. (18)
W.
S. Lour, C. Y. Chang, M. S. Jame, K. F. Yarn, Y.H. Wang, and W. C. Liu, “A MESFET with a
GaAs or an AlXGa1-XAs buffer layer prepared by
molecular beam epitaxy,” Proc.
Electronic Devices and Materials Symposium, Tainan, Taiwan, pp. 90-92,
1986. (19)
W.
S. Lour, C. Y. Chang, M. S. Jame, H. R. Chen, W. C. Liu, and Y. H. Wang, “An enhancement mode p-channel
MODFET prepared by M.B.E.,” Proc.
Electronic Devices and Materials Symposium, Tainan, Taiwan, pp. 95-98,
1986. (20)
M.
S. Jame, W. S. Lour, H. R. Chen, W.
C. Liu, R. L. Wang, and C. Y. Chang, “Heterostructure FET prepared by
M.B.E.,” Proc. Electronic Devices and
Materials Symposium, Taipei, Taiwan, pp. 32-36, 1987. (21)
C.
Y. Chang, T. S. Wu, W.C. Hsu, Y. K. Su, Y. H. Wang, W. C. Liu, B. C. Fang, W. Liu, and F. Kai, “Optoelectronic
and high speed devices fabricated by MBE, MOCVD & LPE at SSL,” Proceeding International Workshop on
Semiconductor Defect physics and Engineering, Tainan, Taiwan, pp.
168-210, 1987. (22)
W. C. Liu, W. S. Lour, R. L. Wang,
and C. Y. Sun, and W. C. Hsu, “Application of GaAs-AlGaAs superlattice
structure for fabricating high breakdown voltage power MISFET,” Material Research Symposium, D7.10,
Boston, Massachusetts, U.S.A., 1990. (23)
W. C. Liu, C. Y. Sun, W. S. Lour, R.
L. Wang, J. W. Wu, “On the modeling and analysis of delta-doped structure for
high speed, high power FET application,” The
Eighth International Model Analysis Conference, Florida, U.S.A., 1990. (24)
W. C. Liu, R. L. Wang, C. Y. Sun, W.
S. Lour, and C. C. Hong, “On the S-shaped negative differential conductivity
in GaAs delta-doped superlattice,” Materials
Research Symposium, J3.12, San Francisco, U.S.A., 1990. (25)
W. C. Liu, C. Y. Sun, W. S. Lour, R.
L.Wang, and W. C. Hsu, “Analysis and calculation on an atomic scaled doped
structure,” Material Research
Symposium, Q2.1, San Francisco, U.S.A., 1990. (26)
W. C. Liu, J. W. Wu, W. S. Lour, and
C. Y. Sun, “A GaAs quantum-well switching device with S-shaped
negative-differential resistance,” Material
Research Symposium, B3.6, Boston, Massachusetts U.S.A., 1990. (27)
W. C. Liu, J. W. Wu, C. Y. Sun, and
W. S. Lour, “Investigation of d-doped negative-differential resistance
devices prepared by molecular beam epitaxy,” Materials Research Symposium, B3.8, Boston, Massachusetts,
U.S.A., 1990. (28)
J.
W. Wu, W. C. Liu, C. Y.
Sun, and W. S. Lour, “Long period d-doped negative-differential-resistance
devices prepared by molecular beam epitaxy,” Proc. Int. Electronic Devices & Materials Symposium, Hsinchu,
Taiwan, pp. 77-79, 1990. (29)
W. C. Liu, W. S. Lour, C. Y. Sun, D.
F. Guo, and Y. S. Lee, “MBE grown double negative-differential-resistance
AlGaAs/GaAs superlattice-emitter transistor,” the Sixth European Conference on Molecular Beam Epitaxy and Related
Growth Methods, Tampere, Finland, Apr. 21-24, 1991. (30)
W. C. Liu, W. S. Lour, C. Y. Sun, Y.
S. Lee, and D. F. Guo, “Applications of AlGaAs/GaAs superlattice for
negative-differential-resistance transistor,” Proc. International Conference on Thin Film Physics and Applications,
(‘91TFPA), SPIE, Shanghai, China,
vol. 1519, pp. 670-674, 1991. (EI) (31)
W. C. Liu, C. Y. Sun, W. S. Lour, D.
F. Guo, and Y. S. Lee, “Applications of GaAs graded-period doping
superlattice for negative-difference-resistence device,” Proc. International Conference on Thin Film Physics and Applications
(‘91TFPA), SPIE, Shanghai, China,
Apr.15-17, vol. 1519, pp. 640-644, 1991.
(EI) (32)
W. C. Liu, W. S. Lour, C. Y. Sun, Y.
S. Lee, and D. F. Guo, “A new multi-functional AlGaAs/GaAs
heterostructure-emitter bipolar transistor,” International MicroProcess Conference, B-8-2, Kanazawa, Japan,
July15-18, 1991. (33)
W. C. Liu, C. Y. Sun, W. S. Lour, D.
F. Guo, and Y. S. Lee, “The room temperature characteristics of d-doped superlattice
switching transistor,” Proc.
International Conference on Solid State Devices and Materials, Yokohama,
Japan, Aug. 27-29, pp. 368-370, 1991.
(EI) (34)
W. C. Liu, W. S. Lour, Y. H. Wang, C.
Y. Sun, Y. S. Lee, and D. F. Guo, “Hybrid (confinement and tunneling)
application of AlGaAs/GaAs superlattice in a double-NDR transistor,” Proc. International Conference on Solid
State Devices and Materials, Yokohama, Japan, Aug. 27-29, pp. 371-373,
1991. (EI) (35)
Y.
S. Lee, W. C. Liu, W. S.
Lour, C. Y. Sun, and D. F. Guo, “Investigation of superlattice-emitter
bipolar transistor prepared by molecular beam epitaxy,” Proc. Electronic Devices and Materials Symposium, Taipei, Taiwan,
pp. 359-363, 1991. (36)
D.
F. Guo, W. C. Liu, W. S.
Lour, C. Y. Sun, and Y. S. Lee, “Investigation of heterostructure-emitter
transistor prepared by molecular beam epitaxy,” Proc. Electronic Devices and Materials Symposium, Taipei, Taiwan,
pp. 364-368, 1991. (37)
W. C. Liu, C. Y. Sun, D. F. Guo, and W.
S. Lour, “Application of sawtooth-doping-superlattice collector to bipolar
transistor,” Abstr. 6th International
Conference on Superlattices, Microstructures and Microdevices, (38)
W. C. Liu, W. S. Lour, C. Y. Sun, and
D. F. Guo, “Multi-state superlattice-emitter resonant-tunneling bipolar
transistor with circuit applications,” Abstr.
6th International Conference on Superlattices, Microstructures and
Microdevices, (39)
W. C. Liu, D. F. Guo, W. S. Lour, C.
Y. Sun, and R. C. Liu, “MBE grown GaAs double heterostructure-emitter bipolar
transistor,” Proc. International
Electronic Devices and Materials Symposium, Taipei, Taiwan, pp. 243-246,
1992. (40)
W. C. Liu, C. Y. Sun, D. F. Guo, and
R. C. Liu, “MBE grown GaAs sawtooth-doping-superlattice-collector bipolar
transistor,” Proc. International
Electronic Devices and Materials Symposium, Taipei, Taiwan, pp. 458-461,
1992. (41)
W. C. Liu, C. Y. Sun, D. F. Guo, and
W. S. Lour, “Investigation of GaAs doping superlattice structure,” Proc. 1993 Symposium on Semiconductor
Modeling & Simulation, Taipei, Taiwan, pp. 91-92, 1993. (42)
W. C. Liu, D. F. Guo, W. S. Lour, and
C. Y. Sun, “GaAs bipolar transistor with a triple-well emitter structure,” Proc. 1993 Symposium on Semiconductor Modeling
& Simulation, Taipei, Taiwan, pp. 95-96, 1993. (43)
W. C. Liu, W. S. Lour, D. F. Guo, and
C. Y. Sun, “Modeling and simulating the electrical properties of
heterostructure-emitter bipolar transistor,” Proc. 1993 Symposium on Semiconductor Modeling & Simulation,
Taipei, Taiwan, pp. 69-70, 1993. (44)
W. C. Liu, W. C. Hsu, W. S. Lour, and
H. M. Shieh, “A new n--GaAs/n+-InGaAs doped-channel
MIS-like FET,” International Conference
on Solid-State Devices and Materials, PD2-4, Makuhari Messe, (45)
W. C. Liu, D. F. Guo, S. R. Yih, and
G. M. Lyuu, “The new tristate switches with double delta-doped quantum-well
structure,” Proc. Electronic Devices
and Materials Symposium, (46)
W. C. Liu, D. F. Guo, J. T. Liang,
and L. W. Laih, “A new GaAs doped-channel field-effect transistor,” Proc. Electronic Devices and Materials
Symposium, Chungli, Taiwan, pp. 148-150, 1993. (47)
W. C. Liu, D. F. Guo, and L. W. Laih,
“MBE grown GaAs-InGaAs quantum-well resonant-tunneling switching device,” Proc. Electronic Devices and Material
Symposium, Hsinchu, Taiwan, pp. 46-48, 1994. (48)
W. C. Liu, D. F. Guo, L. W. Laih, S.
R. Yih, J. T. Liang, and G. M. Lyuu, “A new delta-doped quantum-well
InGaAs-GaAs resonant-tunneling switching device,” Proc. 24th European Solid State Device Research Conference,
Edinburgh, Scotland, pp. 551-554, 1994. (49)
Y.
H. Wu, J. S. Su, W. C. Liu,
and W. Lin, “A new In0.53Al0.22Ga0.25As/InP
heterojunction bipolar transistor grown by LP-MOCVD,” Proc. 24th European Solid State Device Research Conference,
Edinburgh, Scotland, pp. 455-458, 1994. (50)
M.
J. Kao, W. C. Hau, W. C. Liu,
H. S. Shieh, “High carrier density and mobility in GaAs/InGaAs/GaAs double
delta-doped channels heterostructures,” Proc.
24th European Solid State Device Research Conference, Edinburgh, Scotland,
pp. 559-562, 1994. (51)
W. C. Liu, D. F. Guo, and L. W. Laih,
“A new negative-differencial-resistance resonant-tunneling switch with
delta-doped quantum-well structure,” Proc.
1994 International Conference on Solid State Devices and Materials, Yokohama,
Japan, pp. 796-798, 1994. (EI) (52)
W. C. Liu, L. W. Laih, D. F. Guo, and
J. H. Tsai, “Defect on Be-doped AlGaAs layers grown by molecular beam
epitaxy,” Proc. 1994 International
Conference on Electronic and Materials, Hsinchu, Taiwan, vol. 3, pp.
171-176, 1994. (53)
W. C. Liu, W. S. Lour, J. H. Tsai, L.
W. Laih, K. B. Thei, C. Z. Wu, Y. T. Ting, and R. C. Liu, “MBE grown GaAs
tri-step doping channel camel-gate FET,” Asia
Pacific Microwave Conference, Korea, pp. 577-580, 1995. (54)
W. C. Liu, J. H. Tsai, L. W. Laih, K.
B. Thei, and C. Z. Wu, “Fabrication and analysis of camel-gate field-effect
transistors (CAMFETs) with active doping channel profiles,” International Laser, Lightwave Conference,
Shanghai, China, pp. 42-45, 1995 (55)
D.
F. Guo, L. W. Laih, J. H. Tsai, and W.
C. Liu, “Applications of InGaAs-GaAs delta-doped quantum wells to
bulk-barrier switching devices,” International
Laser, Lightwave Conference, Shanghai, China, pp. 50-53, 1995. (56)
W. C. Liu, L. W. Laih, J. H. Tsai, C.
Z. Wu, K. B. Thei, W. S. Lour, and R. C. Liu,
“Negative-differential-resistance (NDR) field-effect transistor with n--GaAs/n+-InGaAs/i-GaAs
doped-channel structure,” International
Laser, Lightwave Conference, Shanghai, China, pp. 54-57, 1995. (57)
W. C. Liu, J. H. Tsai, L. W. Laih, K.
B. Thei, C. Z. Wu, W. S. Lour, Y. T. Ting, and R. C. Liu, “GaAs tri-step
high-low doping channel field effect transistor,” IEEE TENCON, Hong-Kong, pp. 107-110, 1995. (EI) (58)
W.
S. Lour, W. C. Liu, J. H.
Tsai, L. W. Laih, J. R. Chen, and M. K. Tsai, “Three-terminal switching
device with InGaAs/GaAs/InGaAs hole confinement layer,” IEEE TENCON, Hong Kong, pp. 95-98, 1995. (EI) (59)
W. C. Liu, L. W. Laih, J. H. Tsai, K.
B. Thei, C. Z. Wu, W. S. Lour, Y. T. Ting, and R. C. Liu, “GaAs-InGaAs doped-channel
negative-differential-resistance field-effect transistor (NDRFET),” IEEE TENCON, Hong Kong, pp. 103-106,
1995. (EI) (60)
W.
S. Lour, W. C. Liu, J. H.
Tsai, and L. W. Laih, “Linear and enhanced transconductance using
high-medium-low doped channel,” 25th
European Solid State Device Research Conference, Netherlands, 1995. (EI) (61)
W.
S. Lour, J. H. Tsai, and W. C. Liu,
“A new InGaP/GaAs DHEBT with delta-sheet and application to power
transistors,” IEEE SIMC-9, (62)
W.
S. Lour, J. H. Tsai, W. C. Liu,
and H. R. Chen, “High-performance InGaP/GaAs single-heterojunction bipolar
transistor by d-doped
sheet,” 1996 China-Japan Joint Meeting
on Microstructure (CJMW‘96), Hefei, P. R. China, 1996. (63)
W. C. Liu, J. H. Tsai, K. B. Thei, K.
W. Lin, C. C. Cheng, and H. R. Chen, “On the InGaP/GaAs
heterostructure-emitter bipolar transistor (HEBT) with multiple S-shaped
negative-differential-resistance,” CJMW’96,
China-Japan Joint Meeting on Microwaves, Hefei, China, 1996. (64)
W. C. Liu, W. S. Lour, J. H. Tsai, L.
W. Laih, C. C. Cheng, and K. W. Lin, “A new heterostructure-base bipolar
transistor with multiple negative-differential-resistance,” IEEE SIMC-9, Toulouse, France, April
29/May 3, 1996. (65)
W. C. Liu, L. W. Laih, J. H. Tsai, C.
C. Cheng, and K. W. Lin, “A new multiple negative-differential-resistance
(MNDR) device with AlGaAs/step-graded InXGa1-XAs
quantum well/GaAs structure,” IEEE
SIMC-9, Toulouse, France, April 29/May 3, 1996. (66)
W. C. Liu, J. H. Tsai, K. B. Thei, C.
C. Cheng, K. W. Lin, and H. R. Chen, “Investigation of InGaP/GaAs
multiple-differential-resistance (NDR) device prepared by MOCVD,” European Gallium Arsenide and Related
III-V Compounds Applications Symposium GAAS’96, Paris, France, 1996. (67)
W.
S. Lour, J. H. Tsai, W. C. Liu,
and H. R. Chen, “Characteristics of InGaP/GaAs single-heterojunction bipolar
transistor with zero potential spike by d-doped sheet,” European Gallium Arsenide and Related
III-IV Compounds Applications Symposium GAAS‘96, Paris, France, 1996. (68)
W. C. Liu, J. H. Tsai, W. S. Lour, K. W. Lin, and C. C.
Cheng, “High current drivability d-doping sheet InGaP/GaAs
heterostructure bipolar transistor for power system applications,” Proc. Int. Conf. High Technology in the
power Indusity, IASTED’96, Banff,
Alberta, Canada, pp. 58-61,
1996. (69)
W. C. Liu, L. W. Laih, J. H. Tsai, W. S. Lour, and K. W. Lin, and C.
C. Cheng, “Metal-insulator-semiconductor (MIS)-like field-effect-transistor
for power system application,” Proc.
Int. Conf. High Technology in the power Industry, IASTED’96, Banff, Alberta, Canada, pp. 62-65, 1996. (70)
W. C. Liu, K. B. Thei, J. H. Tsai, C.
C. Cheng, K. W. Lin, W. S. Lour, and H. R. Chen, “Characteristics of
functional heterostructure-emitter bipolar transistors (HEBT’s),” IEEE International Conference on Semiconductor
Electronics (ICSE’96), Penang, Malaysia., 1996. (71)
W. C. Liu, J. H. Tsai, L. W. Laih, S.
Y. Cheng, W. C. Wang, P. H. Lin, J. Y. Chen, and H. H. Lin, “On the
recombination currents effect of heterostructure-emitter bipolar
transistors,” Abstr. Int. Conf.
Optoelectronic and Microelectronic and Devices COMMAD’96, (72)
W. C. Liu, J. H. Tsai, L. W. Laih, H.
R. Chen, S. Y. Cheng, W. C. Wang, P. H. Lin, and J. Y. Chen, “A new functional
AlGaAs/InGaAs/GaAs heterostructure-emitter bipolar transistors (HEHBT’s),” Abstr. Int. Conf. Optoelectronic and Microelectronic and
Devices COMMAD’96, (73)
W. C. Liu, L. W. Laih, J. H. Tsai, J.
Y. Chen, W. C. Wang, and P. H. Lin, “Investigation of step doped channel
heterostructure field-effect transistor,” Abstr.
Int. Conf. Optoelectronic and Microelectronic and Devices COMMAD’96, (74)
W. C. Liu, L. W. Laih, J. H. Tsai, K.
W. Lin, and C. C. Cheng, “InGaAs-GaAs pseudomorphic heterostructure
transistor prepared by MOVPE,” (ICMOVPE
VIII’96), Cardiff, Wales, UK, 1996. (75)
W. C. Liu, L. W. Laih, J. Y. Chen, W.
C. Wang, and P. H. Lin, “Multiple switching performances of a GaAs-InGaAs
metal-insulator-semiconductor (MIS) like structure,” Proc. State-of-the-Art Program on Compound Semiconductors XXVI
symposium, 191st ECS Meeting, Montreal, Canada, pp. 310-315, 1997. (76)
W. C. Liu, L. W. Laih, S. Y. Cheng,
W. C. Wang, P. H. Lin, J. Y. Chen, and W. Lin, “An i-InGaP/n-InXGa1-XAs/i-GaAs
step-compositioned doped-channel field-effect transistor (SCDCFET),” Proc. State-of-the-Art Program on Compound
Semiconductors XXVI symposium, 191st
ECS Meeting, Montreal, Canada,
pp. 305-309, 1997. (77)
W. C.
Liu, J. H. Tsai, S. Y. Cheng, W. C. Wang, P. H. Lin, J. Y. Chen,
“Multiple negative-differential-resistance (MNDR) of a graded-AlXGa1-XAs/GaAs
heterostructure-emitter bipolar transistor (HEBT) with a pseudomorphic
InGaAs/GaAs base structure,” Proc.
State-of-the-Art Program on Compound Semiconductors XXVI symposium, 191st ECS Meeting, Montreal, Canada, pp. 263-268, 1997. (78)
S.
Y. Cheng, P. H. Lin, W. C. Wang, J. Y. Chen, and W. C. Liu, “MOCVD grown AlInAs/InGaAs
long-period-superlattice resonant-tunneling transistor (LPSRTT),” Proc. State-of-the-Art Program on Compound
Semiconductors XXVI symposium, 191st
ECS Meeting, Montreal, Canada,
pp. 190-194, 1997. (79)
W. C. Liu, H. I. Chen, S. Y. Cheng,
J. Y. Chen, W. C. Wang, and P. H. Lin, “An InGaAs/AlInAs long-period-superlattice
resonant-tunneling transistor (LPSRTT),” Proc.
the fourth Military Symposium on Fundamental Science, Kaohsiung, Taiwan,
pp. 297-303, 1997. (80)
W. C. Liu, H. I. Chen, L. W. Laih, S.
Y. Cheng, W. C. Wang, P. H. Lin, and J. Y. Chen, “An i-InGaP/n-InXGa1-XAs/i-GaAs
step-compositioned doped-channel field-effect transistor (SCDCFET),” Proc. the fourth Military Symposium on
Fundamental Science, Kaohsiung, Taiwan, pp. 297-303, 1997. (81)
W. C. Liu, J. H. Tsai, S. Y. Cheng,
P. H. Lin, W. C. Wang, and J. Y. Chen, “A novel functional
heterostrucuture-emitter and heterostructure-base transistor (HEHBT),” ESSDERC’97, Stuttgart, German, 1997. (82)
S.
Y. Cheng, P. H. Lin, W. C. Wang, J. Y. Chen, and W. C. Liu, “AlInAs/InGaAs long-period-superlattice resonant-tunneling
(LPSRTT) prepared by MOCVD,” IPRM'97,
Massachusetts, USA, pp. 77-78, 1997.
(EI) (83)
W. C. Liu, H. I. Chen, S. Y. Cheng,
J. Y. Chen, W. C. Wang, and P. H. Lin, “An InGaAs/AlInAs
long-period-superlattice resonant-tunneling transistor (LPSRTT),” Proc. the fourth Military Symposium on
Fundamental Science, Kaohsiung, Taiwan, pp. 297-303, 1997. (84)
W. C. Liu, H. I. Chen, L. W. Laih, S.
Y. Cheng, W. C. Wang, P. H. Lin, and J. Y. Chen, “An i-InGaP/n-InXGa1-XAs/i-GaAs
step-compositioned doped-channel field-effect transistor (SCDCFET),” Proc. the fourth Military Symposium on
Fundamental Science, Kaohsiung, Taiwan, pp. 297-303, 1997. (85)
W. C. Liu, J. H. Tsai, S. Y. Cheng,
J. Y. Chen, P. H. Lin, and W. C. Wang, “Multiple-state switching (MSS)
phenomenon of AlGaAs/InGaAs/GaAs heterostructures,” Proc. Electronic Devices and Material Symposium, Chungli, Taiwan,
pp. 471-474, 1997. (86)
W. C. Liu, L. W. Laih, S. Y. Cheng, J. Y. Chen, P. H. Lin, and W. C.
Wang, “A step-doped-channel negative-differential-resistance (NDR) transistor,”
Proc. Electronic Devices and Material
Symposium, Chungli, Taiwan, pp. 211-214, 1997. (87)
W. C. Liu, S. Y. Cheng, W. C. Wang, J.
Y. Chen, and P. H. Lin, “A new AlInAs/InGaAs resonant-tunneling
superlattice-emitter transistor (RTSET),”
Proc. Electronic Devices and Material Symposium, (88)
W. C. Liu, S. Y. Cheng, W. L. Chang, H.
J. Pan, and Y. H. Shie,
“MOCVD grown AlInAs/GaInAs short-period-superlattice resonant-tunneling
transistor (SPSRTT),” IPRM'98, (89)
W. C. Liu, S. Y. Cheng, W. L. Chang,
H. J. Pan, and Y. H. Shie, “AlInAs/GaInAs short-period-superlattice resonant
tunneling transistor (SPSRTT),” Proc.
in State-of-the-Art Program on Compound Semiconductors XXVII symposium, 193st ECS Meeting, San Diego, U.S.A., pp. 528-533, 1998. (90)
W. C. Liu, S. Y. Cheng, W. L. Chang,
H. J. Pan, and Y. H. Shie, “δ-doping InGaP/GaAs heterojunction bipolar
transistor,” Proc. in State-of-the-Art
Program on Compound Semiconductors XXVII symposium, 193st ECS Meeting, San Diego,
U.S.A., pp. 548-554, 1998. (91)
W.
L. Lour, W. S. Lour, S. T. Young, M. Y. Wu, and W. C. Liu, “New n+-GaAs/δ(p+)-GaInP/n-GaAs
camel-gate HFET with high breakdown voltage and low leakage current,” Proc. in State-of-the-Art Program on Compound
Semiconductors XXVII symposium, 193st
ECS Meeting, San Diego, U.S.A., pp. 455-460, 1998. (92)
W. C. Liu, H. I. Chen, S. Y. Cheng,
W. L. Chang, Y. H. Shie, and H. J. Pan, “A hydrogen sensitive Pd/GaAs
Schottky diode sensor,” ICMST'98,
Beijing, China, 1998. (93)
W. C. Liu, H. I. Chen, S. Y. Cheng,
W. L. Chang, H. J. Pan, and Y. H. Shie, “A InP based hydrogen sensitive
metal-semiconductor field-effect transistor (MESFET),” ICMST'98, Beijing, China, 1998. (94)
W. C. Liu, S. Y. Cheng, W. L. Chang,
H. J. Pan, and Y. H. Shie, “A new AlInAs/InGaAs resonant-tunneling
superlattice-emitter transistor (RTSET),”
Proc. ESSDERC’98, Bordeaux, France, pp. 532-535, 1998. (95)
W. C. Liu, S. Y. Cheng, W. L. Chang,
Y. H. Shie, and H. J. Pan, “A new AlInAs/GaInAs superlattice-confined emitter
bipolar transistor (SCEBT),” Proc.
CJMW'98, Beijing, China, pp. 23-26, 1998. (96)
W. C. Liu, S. Y. Cheng, W. L. Chang,
Y. H. Shie, and H. J. Pan, “A low offset-voltage InGaP/GaAs d-doped heterojunction
bipolar transistor (d-HBT),” Proc. CJMW'98, Beijing, China, pp. 27-30, 1998. (97)
W. C. Liu, S. Y. Cheng, W. L. Chang,
H. J. Pan, and Y. H. Shie, “AlInAs/GaInAs superlatticed
negative-differential-resistance switch (SNDRS) prepared by MOCVD,” ICMMT'98, Beijing, China, 1998. (98)
W. C. Liu, S. Y. Cheng, W. L. Chang,
H. J. Pan, and Y. H. Shie, “A new InGaP/GaAs double delata-doped
heterojunction bipolar transistor (D3HBT),” ICMMT'98, (99)
W. C. Liu, S. Y. Cheng, J. Y. Chen,
W. L. Chang, S. C. Feng, K. H. Yu, and C. H. Yen “InGaP/GaAs superlatticed
resonant-tunneling transistor (SRTT),” 8th
International Symposium on Passivity of Metals and Semiconductors, (100)
W. C. Liu, Y. H. Shie, W. L. Chang,
S. C. Feng, K. H. Yu, and C. H. Yen, “InGaP/GaAs resonant-tunneling transistor
(RTT),” Abstr. Int. Conf. Optoelectronic and Microelectronic and
Devices COMMAD’98, (101)
W. C. Liu, W. C. Wang, S. Y. Cheng,
W. L. Chang, J. Y. Chen, and H. J. Pan, “A new InGaP/GaAs double
heterojunction bipolar transistor (DHBT) with a d-doped wide-gap collector,” Abstr. Int. Conf. Optoelectronic and Microelectronic and
Devices COMMAD’98, (102)
W. C. Liu, J. Y. Chen, S. Y. Cheng,
W. L. Chang, W. C. Wang, and H. J. Pan, “Design consideration of emitter-base
junction structure for InGaP/GaAs heterojunction bipolar transistor,” Abstr. Int. Conf. Optoelectronic and Microelectronic and
Devices COMMAD’98, (103)
W. C. Liu, S. Y. Cheng, W. L. Chang,
W. C. Wang, H. J. Pan, and J. Y. Chen, “On the AlInAs/GaInAs
superlatticed negative-differential-resistance transistor (SNDRT),” Abstr. Int. Conf. Optoelectronic and Microelectronic and
Devices COMMAD’98, (104)
W. C. Liu, H. J.
Pan, W. L.
Chang, S. Y. Cheng, W. C. Wang, and J. Y. Chen, “A high-barrier gate and
tri-step doped channel transistor,” Abstr.
Int. Conf. Optoelectronic and
Microelectronic and Devices COMMAD’98, (105)
W. C. Liu, W. L. Chang, S. Y. Cheng,
W. C. Wang, J. Y. Chen, and H. J. Pan, “High-breakdown and high-linearity Ga (106)
W. C. Liu, W. L. Chang, H. J. Pan, J.
Y. Chen, W. C. Wang, K. H. Yu, and S. C. Feng, “High-breakdown n+-GaAs/d(p+)-GaInP/n-GaAs
heterojunction camel-gate FET grown by LP-MOCVD,” EUROCVD 12, Barcelona,
Spain, pp. 1171-1177, 1999. (107)
W. C. Liu, S. Y. Cheng, H. J. Pan, J.
Y. Chen, W. C. Wang, S. C. Feng, and K. H. Yu, “A new In0.5Ga0.5P/GaAs
double heterojunction bipolar transistor (DHBT) prepared by MOCVD,” EUROCVD 12, Barcelona, Spain, pp. 1155-1161, 1999. (108)
W. C. Liu, H. J. Pan, S. Y. Cheng, W.
C. Wang, J. Y. Chen, S. C. Feng, and K. H. Yu, “MOCVD grown d-doped InGaP/GaAs
heterojunction bipolar transistor,” EUROCVD
12, Barcelona, Spain, pp.
1163-1169, 1999. (109)
W. C. Liu, S. Y. Cheng, H. J. Pan, J.
Y. Chen, W. C. Wang, K. B. Thei, S. C. Feng, and K. H. Yu, “InGaP/GaAs
superlatticed resonant-tunneling transistor (SRTT),” IPRM'99, Davos, Switzerland,
pp. WeP12, 1999. (EI) (110)
W. C. Liu,
W. L. Chang, Y.
M. Shih, H. J. Pan, W. C. Wang, K. H. Yu, J. Y. Chen, K. B. Thei, K.
H. Yu, and S. C. Feng, “A new GaInP/GaAs high-barrier gate and
tri-step doped channel transistor,”
IPRM’99, Davos, Switzerland,
pp. WeP13, 1999.
(EI) (111)
W. C. Liu, S. Y. Cheng, W. C. Wang,
J. Y. Chen, H. J. Pan, S. C. Feng, and K. H. Yu, “A high-breakdown and low-offset voltage InGaP/GaAs heterostructure
bipolar transistor for power system applications,” 34th Intersociety Energy Conversion
Engineering Conference (IECEC), Vancouver, Canada, pp. 2493, 1999. (112)
W. C. Liu, W. L. Chang, J. Y. Chen, H.
J. Pan, W. C.
Wang, K. H.
Yu, and S. C. Feng, “A high-breakdown voltage n+-GaAs/d(p+)-GaInP/n-GaAs
heterojunction camel-gate transistor for power system applications,” 34th Intersociety Energy Conversion
Engineering Conference (IECEC), Vancouver, Canada, pp. 2494, 1999. (113)
W. C. Liu,
H. J. Pan, S. Y. Cheng, W. C. Wang, J.
Y. Chen, and K. B. Thei, “Performance improvement of single- and
double-heterojunction bipolar transistors by well-designed heterostructure,” Proc. the sixth Military Symposium on
Fundamental Science, Kaohsiung, Taiwan, pp. 299-306, 1999. (114)
W. C. Liu,
W. L. Chang, H.
J. Pan, W. C. Wang, J. Y. Chen, K. H. Yu,
and S. C. Feng,
“High-breakdown
and high-linearity Ga (115)
W. C. Liu, H. J. Pan, S. Y. Cheng, J.
Y. Chen, W. C. Wang, and K. B. Thei, “High-performance d-doped InGaP/GaAs
heterojunction bipolar transistors,” 29th European Solid-State Device Research Conference
ESSDERC’99, Leuven, Belgium, pp. 556-559, 1999. (116)
W.
L. Chang, W. C. Liu, W. S.
Lour, W. C. Wang, J. Y. Chen, H. J. Pan, and K. B. Thei, “A new air-bridge gate Ga (117)
H.
J. Pan, J. Y. Chen, W. C. Wang, K. B. Thei, W. L. Chang, S. Y. Cheng, and W. C. Liu, “On the
continuous-conduction-band In0.53Ga0.25Al0.22As/InP
heterojunction bipolar transistors,” ICTMC’12,
pp. 2-89, 1999. (118)
S.
Y. Cheng, W. C. Liu, W. L.
Chang, W. C. Wang, H. J. Pan, J. Y. Chen, and K. B. Thei, “Applications of
InGaP "Insulator" for high-breakdown and low-offset voltage
heterostructure bipolar transistor,” ICTMC’12,
pp. 2-90, 1999. (119)
S.
Y. Cheng, W. C. Liu, W. L.
Chang, W. C. Wang, J. Y. Chen, H. J. Pan, and K. B. Thei, “InGaP/GaAs
superlatticed resonant-tunneling transistor (SRTT),” EDMS’99, pp. 328-330, 1999. (120)
W.
L. Chang, W. C. Liu, W. C.
Wang, J. Y. Chen, H. J. Pan, K. B. Thei, and S. Y. Cheng, “Temperature
dependent investigation of a Ga (121)
S.
Y. Cheng, W. C. Liu, W. L.
Chang, W. C. Wang, J. Y. Chen, H. J. Pan, and K. B. Thei, “Near-ideal
breakdown characteristic of InGaP/GaAs heterostructure bipolar transistor,” EDMS’99, pp. 477-479, 1999. (122)
W.
C. Wang, W. C. Liu, H. J.
Pan, C. C. Cheng, S. C. Feng, and C. H. Yen, “A new InP/InGaAlAs
multiple-negative-differential-resistance (MNDR) switching device,” Proc. in State-of-the-Art Program on
Compound Semiconductors XXVII symposium, 197st ECS Meeting, 2000. (123)
H.
J. Pan, W. C. Liu, K. H.
Yu, W. C. Wang, and S. C. Feng, “A high-sensitivity hydrogen sensor based on
Pd/InP Schottky diode structure,” Proc.
in State-of-the-Art Program on Compound Semiconductors XXVII symposium, 197st ECS Meeting, 2000. (124)
K.
W. Lin, W. C. Liu, K. H.
Yu, C. C. Cheng, and K. B. Thei, “Step-graded doped-channel (SGDC)
field-effect transistor,” Proc. in
State-of-the-Art Program on Compound Semiconductors XXVII symposium, 197st ECS Meeting, 2000. (125)
K.
H. Yu, W. C. Liu, W. L.
Chang, K. W. Lin, K. P. Lin, and C. H. Yen, “An inverted delta-doped V-shaped
InGaP/InGaAs pseudomorphic high electron mobility transistor,” 12th International Conf. On Indium
Phosphide and Related Materials (IPRM),
(126)
W. C. Liu, H. J. Pan, W. C. Wang, C.
C. Cheng, S. C. Feng, C. H. Yen and K. W. Lin, “Temperature-dependent
characteristics of a novel InP/InGaAlAs heterojunction bipolar transistor,” Proc. ESSDERC 2000, Cork, Ireland, pp.
240-243, 2000. (127)
W. C. Liu, W. C. Wang, H. J. Pan, C.
C. Cheng, S. C. Feng, C. H. Yen, “A novel functional
negative-differential-resistance heterojunction bipolar transistor
(NDR-HBT),” Proc. ESSDERC 2000, Cork,
Ireland, pp. 244-247, 2000. (128)
W. C. Liu, W. L. Chang, W. S. Lour,
K. H. Yu, K. W. Lin, K. P. Lin, and C. H. Yen, “On the InGaP/InXGa1-XAs
pseudomorphic high electron-mobility transistors for high-temperature
reliabilities,” Proc. ESSDERC 2000,
Cork, Ireland, pp. 428-431, 2000. (129)
W. C. Liu, L. W. Laih,
“GaInP/GaInAs/GaAs modulation-compositioned channel field-effect transistor,”
Knowledge Bridge, pp. 3, no. 6,
2000. (130)
K.
H. Yu, W. C. Liu, K. W.
Lin, K. P. Lin, and C. H. Yen, “InGaAs/GaAs composite doped channel
heterostructure field-effect transistor,” ECS,
San Francisco, U.S.A., pp. 70-75, 2001. (131)
W. C. Liu, W. C. Wang, K. H. Yu, K.
W. Lin, C. H. Yen, and K. P. Lin, “Characteristics of InP/InGaAs
superlattice-emitter resonant tunneling bipolar transistors (SERTBT),” ECS, San Francisco, U.S.A.,
pp.141-145, 2001. (132)
W.
C. Wang, C. Y. Chen, W. H. Chiou, C. C. Cheng, X. D. Liao, K. M. Lee, R. C.
Liu, and W. C. Liu,
“Investigation of InP/InGaAs superlattice-emitter resonant tunneling bipolar
transistors (RTBT’s),” EDMS’01, pp.
139-142, 2001. (133)
H.
J. Pan, W. H. Chiou, C. Y. Chen, C. C. Cheng, K. M. Lee, X. D. Liao, R. C.
Liu, and W. C. Liu, “On the
InGaP/GaAs resonant-tunneling bipolar transistors,” EDMS’01, pp.150-153, 2001. (134)
K.
H. Yu, R. C. Liu, K. W. Lin, C. K. Wang, H. M. Chuang, C. T. Lu, S. F. Tsai,
and W. C. Liu, “On the n+-GaAs/p+-InGaP/n-GaAs
high-barrier gate heterostructure field-effect transistor,” EDMS’01, pp. 195-198, 2001. (135)
W.
L. Chang, R. C. Liu, K. H. Yu, K. W. Lin, S. F. Tsai, C. T. Lu, and W. C. Liu, “Investigation of
an inverted delta-doped V-shaped GaInP/InxGa1-xAs/GaAs
PHEMT,” EDMS’01, pp. 203-206, 2001. (136)
K.
B. Thei, H. M. Chuang, C. K. Wang, W. H. Chiou, C. Y. Chen, W. C. Liu, C. H. Ho, C. W. Su,
H. C. Lin, L. D. Chen, Y. H. Chen, and K. H. Lee, “Study of double
ion-implant (DII) Ti-salicide and pre-amorphization implant (PAI) Co-salicide
for CMOS device application,” EDMS’01,
pp. 725-728, 2001. (137)
K.
B. Thei, H. M. Chuang, C. K. Wang, W. H. Chiou, C. Y. Chen, W. C. Liu, Y. S. Ho, C. H. Ho,
C. W. Su, H. C. Lin, L. D. Chen, Y. H. Chen, and K. H. Lee, “Characteristics
and modeling of polysilicon resistors in sub-quarter micron CMOS mixed-mode
aoolications,” EDMS’01, pp.
729-732, 2001. (138)
K.
B. Thei, H. M. Chuang, C. K. Wang, W. H. Chiou, C. Y. Chen, W. C. Liu, S. G. Wuu, C. S.
Wang, C. H. Ho, C. W. Su, H. C. Lin, L. D. Chen, Y. H. Chen, and K. H. Lee,
“A novel of borderless contact (BLC) structure for high-performance ULSI
applications,” EDMS’01, pp. 755-
758, 2001. (139)
W. C. Liu, H. I. Chen, and S. Y.
Cheng, “Pd/semiconductor Schottky diode hydrogen sensor,” Knowledge Bridge, pp. 3-4, no. 6,
2001. (140)
W. C. Liu, and S. Y. Cheng, “Wide
voltage operation regime double heterojunction bipolar transistor,” Knowledge Bridge, pp. 1, no. 9, 2001. (141)
K. H. Yu, H. M. Chuang, K. W. Lin, X. D. Liao, C. T. Lu, and W. C. Liu, “Improved
n+-InGaAs/n-GaAs composite-doped-channel structure for
high-breakdown, low-leakage, and high-temperature applications,” 第九屆三軍官校基礎學術研討會,
高雄, pp.
C1.5-11, 2002. (142)
W. H. Chiou, H. J. Pan, H. M. Chuang, K. W. Lin, S. F. Tsai, K.
M. Lee, and W. C. Liu, “A novel InGaP/GaAs
superlattice-emitter resonant-tunneling bipolar transistor (SE-RTBT) with
multiple-negative-differential-resistance (MNDR) phenomena,” 第九屆三軍官校基礎學術研討會,
高雄, pp.
CP.1-6, 2002. (143)
W.
H. Chiou, C. Y. Chen, C. K. Wang, H. M. Chuang, X. D. Liao, K. M. Lee, S. F.
Tsai, C. T. Lu, and W. C. Liu, “InP/InGaAs double heterojunction bipolar transistor (GHBT) with an
emitter tunneling barrier and composite collector structure,”
14th International Conf. On Indium
Phosphide and Related Materials (IPRM2002),
(144)
H.
M. Chuang, K. W. Lin, W. H. Chiou, K. M. Lee, C. T. Lu, and W. C. Liu,
“On the InGaP/GaAs short-period superlattice-emitter transistor (SPSET),” International Conf. On Superlattices, Nano-structures and Nano-devices
(ICSNN2002), (145)
K.
W. Lin, H. M. Chuang, W. H. Chiou, X. D. Liao, S. F. Tsai, and W. C.
Liu, “InGaP/InGaAs quantum-well channel field-effect transistors,” International Conf. On Superlattices, Nano-structures and Nano-devices
(ICSNN2002), (146)
W. C. Liu,
K. H. Yu, H. M. Chuang, K. W. Lin, K. M. Lee, S. F. Tsai Wen-Chau Liu, “On
the n+-GaAs/p+-InGaP/n--GaAs high-barrier camel-like
gate transistor for high-breakdown, low-leakage and high-temperature
operations,”
32th European Solid-State
Device Research Conference ESSDERC’2002, Firenze,
Italy, pp.
215-218, 2002. (147)
H.
M. Chuang, K. W. Lin, H. J. Pan, K. M. Lee, X. D. Liao, W. C. Liu,
“An InGaP/GaAs resonant-tunnelling bipolar transistor (RTBT) with multiple
negative-differential-resistance (MNDR) phenomena,” 32th European Solid-State
Device Research Conference ESSDERC’2002, Firenze,
Italy, pp.
219-222, 2002. (148)
H.
M. Chuang, K. H. Yu, K. W. Lin, C. C. Cheng, J. Y. Chen, and W. C. Liu,
“InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility
transistor,” 29th International
Symposium on Compound Semiconductors ISCS2002,
Lausanne, Switzerland, 2002. (149)
H.
M. Chuang, C. Y. Chen, J. Y. Chen, K. W. Lin, and W. C. Liu,
“On the n+-InGaAs/n-GaAs composite doped channel heterostructure
field-effect transistor (CDC-HFET),” Abstr.
Int. Conf. Optoelectronic and
Microelectronic Materials and Devices COMMAD’2002, (150)
H.
M. Chuang, J. Y. Chen, C. Y. Chen, K. W. Lin, and W. C. Liu,
“An InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility
transistor (DC-PHEMT),” Abstr. Int.
Conf. Optoelectronic and
Microelectronic Materials and Devices COMMAD’2002, (151)
J.
Y. Chen, C. Y. Chen, H. M. Chuang, K. W. Lin, and W. C. Liu,
“On the InP/InGaAs double heterojunction bipolar transistor (DHBT) with
emitter tunneling barrier and composite collector structure,” Abstr. Int. Conf. Optoelectronic and Microelectronic Materials and Devices COMMAD’2002,
(152)
H.
M. Chuang, K. H. Yu, C. Y. Chen, X. D. Liao, K. M. Lee, P. H. Lai, C. I. Kao,
and W. C. Liu, “Characteristics of an InGaAs/GaAs composite
doped channel heterostructure field-effect transistor,” EDMS’02, Taipei, pp. 133-136, 2002. (153)
K.
H. Yu, H. M. Chuang, C. Y. Chen, C. T. Lu, S. F. Tsai, Y. Y. Tsai, C. I. Kao,
and W. C. Liu, “Quantum well channel n+-GaAs/p+-InGaP/n-GaAs
camel-like gate heterostructure field-effect transistor (HFET),” EDMS’02, Taipei, pp. 137-140, 2002. (154)
C.
Y Chen, W. H. Chiou, H. M. Chuang, K. M. Lee, X. D. Liao, C. T. Lu, S. F.
Tsai, S. I. Fu, C. I. Kao, S. Y. Cheng, and W. C. Liu,
“InP/InGaAs double heterojunction bipolar transistor (DHBT) with an emitter
tunneling barrier and composite collector structure,” EDMS’02, Taipei, pp. 53-56, 2002. (155)
W. C. Liu, and W. L. Chang, “A
high-breakage voltage, low-leakage current metal-“insultor”-semiconductor
field-effect transistor,” Knowledge
Bridge, pp. 4, no. 23, 2002. (156)
W. C. Liu, and S. Y. Cheng, “Superlatticed
negative-diffetential-resistance functional transistor,” Knowledge Bridge, pp. 2-3, no. 24, 2002. (157)
W. C. Liu, J. H. Tasi, W. L. Chang,
K. H. Yu, and K. W. Lin, “High-breakdown voltage heterostructure
fields-effect transistor for high temperature operations,” Knowledge Bridge, pp. 2, no. 25, 2002. (158)
C.
Y. Chen, H. M. Chuang, S. I. Fu, P. H. Lai, Y. Y. Tsai, C. I. Kao and W.
C. Liu, “InP/InGaAs tunneling emitter bipolar transistor (TEBT),” Extended Abstr. Int. Conf. Solid-State
Devices and Materials (SSDM2003), (159)
H.
M. Chuang, C. Y. Chen, P. H. Lai, S. I. Fu, Y. Y. Tsai, C. I. Kao and W.
C. Liu, “Study of InGaP/InGaAs double doped channel heterostructure
field-effect transistor (DDCHFET),” Extended
Abstr. Int. Conf. Solid-State Devices and Materials (SSDM2003), (160)
J.
Y. Chen, D. F. Guo, K. M. Lee, H. M. Chuang, C. Y. Chen and W. C. Liu,
“A double-barrier-emitter triangular barrier optoelectronic switch,” Extended Abstr. Int. Conf. Solid-State
Devices and Materials (SSDM2003), (161)
J.
Y. Chen, D. F. Guo, H. M. Chuang, C. Y. Chen, and W. C. Liu,
“Characteristics of a triangular-barrier optoelectronic switch,” EDMS’03, pp. 280-283, 2003. (162)
J.
Y. Chen, D. F. Guo, H. M. Chuang, C.Y. Chen, and W. C. Liu,
“Illumination effect on the switching characteristics of double
heterostructure-emitter bipolar transistor,” EDMS’03, pp.277-279,
2003. (163)
H.
M. Chuang, P. H. Lai, C. I. Kao, W. H. Hsu, C. W. Hong, C. W. Chen, and W.
C. Liu, “InGaP/InGaAs double-channel transistor by utilizing dual
δ-doped quantum wells,” EDMS’03, pp. 433-435, 2003. (164)
C. Y. Chen, S. Y. Cheng, S. I.
Fu, C. H. Tsai, C. Y. Chang, C. W. Hong, C. W. Chen, and W. C. Liu,
“A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) for ultra-low
current operations,” EDMS’03, pp. 629-634, 2003. (165)
C. Y. Chen, K. W. Lin, W. H. Chiou, H. M. Chuang,
J. Y. Chen, and W. C. Liu, “InP/InGaAs tunneling-emitter
bipolar transistor (TEBT) with a step-graded collector structure prepared by
MOCVD,” Proc. in CVD XVI and EUROCVD 14, 203rd ECS Meeting, Paris, France, pp. 982-989, 2003. (166)
H. M. Chuang, K. W. Lin, K. H. Yu, C. Y. Chen, J.
Y. Chen, and W. C. Liu, “An n+-InGaAs/n-GaAs
dual-doped-channel heterostructure field-effect transistor (DDC-HFET) grown
by LP-MOCVD,” Proc. in CVD XVI and EUROCVD 14, 203rd ECS Meeting, Paris, France, pp. 1395-1402, 2003. (167)
C.
C. Cheng, S. Y. Cheng, H. M. Chuang, C. Y. Chen, P. H. Lai, C. I Kao, C. W.
Hong, C. W. Chen, and W. C. Liu, “InGaP/InGaAs quantum-well
delta-doped-channel field-effect transistor,” Proc. in SPIE's Int. Symp. Microelectronics,
MEMS, and Nanotechnology, Perth, Australia,
vol.5274, pp. 407-415, 2003.
(EI) (168)
C.
Y. Chen, S. Y. Cheng, H. M. Chuang, J. Y. Chen, S. I. Fu, C. H. Tsai, C. W.
Hong, C. W. Chen, and W. C. Liu, “DC characterization of an
InP/InGaAs tunneling emitter bipolar transistor (TEBT),” Proc. in SPIE's Int. Symp. Microelectronics, MEMS, and Nanotechnology,
(169)
H.
M. Chuang, C. M. Uang, S. Y. Cheng, C. Y. Chen, P. H. Lai, C. I Kao, Y. Y.
Tsai, W. H. Hsu, and W. C. Liu, “InGaP/InGaAs dual-channel
transistor,” Extended Abstr. The 4th Int. Workshop on Junction
Technology (IWJT), (170)
C.
M. Uang, H. M. Chuang, S. F. Tsai, K. B. Thei, P. H. Lai, S. I. Fu, Y. Y.
Tsai, and W. C. Liu, “Temperature-dependent characteristics of
diffused and polysilicon resistors for ULSI applications, Extended Abstr, The 4th Int. Workshop on Junction Technology (IWJT), Shsnghsi, China,
pp. 293-296, 2004. (171)
C.
Y. Chen, C. M. Uang, S. Y. Cheng, H. M. Chuang, S. I. Fu, C. H. Tsai, C. Y.
Chang, and W. C. Liu, “Characteristics of an InP/InGaAs
tunneling emitter bipolar transistor (TEBT)”, Extended Abstr, The 4th Int.
Workshop on Junction Technology (IWJT), Shsnghsi, China, pp.
220-223, 2004. (172)
C.
Y. Chen, S. I. Fu, C. H. Tsai, C. Y. Chang, and W. C. Liu,
“Characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with
sulfur passivation”, Extended Abstr, The 5th Int. Vacuum Electron Sources
Conference (IVESC2004), (173)
J.
Y. Chen, D. F. Guo, C. Y. Chen, P. H. Lai, Y. Y. Tsai, and W. C. Liu,
“Characteristics of a double-barrier-emitter triangular-barrier ptoelectronic
switch (DTOS)”, Extended Abstr, The 5th Int. Vacuum Electron Sources
Conference (IVESC2004), (174)
S.
Y. Cheng, C. Y. Chen, J. Y. Chen, H. M. Chuang, W. C. Liu, and
W. L. Chang, “Numerical and experimental analysis of an InP/InGaAs tunneling
emitter bipolar transistor (TEBT) for low-voltage and low-power circuit
applications”, Extended Abstr, The 5th Int. Vacuum Electron Sources
Conference (IVESC2004), (175)
J.
Y. Chen, C. Y. Chen, S. I. Fu, C. Y. Chang, C. H. Tsai, and W. C. Liu,
“Characteristics
of an InGaAs/InGaAsP composite-collector heterojunction bipolar transistor
(CCHBT)”, Extended Abstracts of the 2004 International Conference on Solid
State Devices and Materials (SSDM2004), Tokyo, Japan, pp.
102-103, 2004. (176)
Y.
Y. Tsai, C. C. Cheng, K. W. Lin, W. H. Hsu, C. W. Hong, and W. C. Liu,
“Characteristics of a Pd-Oxide-AlGaAs MOS Schottky diode hydrogen sensor,” IEDMS’2004, Hsinchu, pp. 431-433, 2004. (177)
S.
Y. Cheng, C. Y. Chen, S. Y. Fu, P. H. Lai, J. Y. Chen, and W. C. Liu,
“Influence of AlXGa1-XAs graded layer on the
performance of InGaP/AlXGa1-XAs/GaAs composite-emitter
heterojunction bipolar transistors (CEHBTs),” IEDMS’2004, Hsinchu, pp. 213-216, 2004. (178)
P.
H. Lai, C. H. Yen, C. I. Kao, H. M. Chuang, S. F. Tsai, C. Y. Chen, and W.
C. Liu, “A new camel-gate field effect transistor with a composite
channel structure,” Extended Abstr. Int. Conf. Solid-State Devices and
Materials (SSDM2004), (179)
W. C. Liu and S. Y. Cheng,
“InGaP/AlGaAs/GaAs heterojunction bipolar transistor (HBT) with zero
conduction-band discontinuity,” (180)
C. Y. Chen, S. I. Fu, P. H, Lai, Y. Y Tsai, C. H. Yen, and W. C. Liu, “Characteristics of an
InP/InGaAs tunneling-emitter bipolar transistor (TEBT) with double
heterostructures,”
第十二屆三軍官校基礎學術研討會,
高雄, pp.
C-1-C-6, 2005. (181)
S. Y. Cheng, C. Y. Chen, S. I. Fu, P. H, Lai, Y. Y Tsai, and W. C. Liu, “An InGaP/AlXGa1-XAs/GaAs
composite-emitter heterojunction bipolar transistor (CEHBT),” 第十二屆三軍官校基礎學術研討會,
高雄, pp.
C-14-C-17, 2005. (182)
C. Y. Chen, S. I. Fu, Y. Y Tsai, P. H, Lai, S. Y. Cheng, and W. C. Liu, “Characteristics of
heterojunction bipolar transistor (HBT) with sulfur passivation,” 第十二屆三軍官校基礎學術研討會,
高雄, pp.
C-23-C-27, 2005. (183)
P.
H. Lai, S. I. Fu, Y. Y. Tsai, C. H. Yen, C. I Kao, C. W. Chen, and W.
C. Liu, “Temperature-dependent characteristics of an
sulfur-passivated AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility
transistor (PHEMT)”,
Extended Abstracts of the 2005 International Conference on Solid
State Devices and Materials (SSDM2005), Kobe, Japan,
pp. 704-705, 2005. (184)
Y.
Y. Tsai, C. C. Cheng, P. H. Lai, S. I. Fu, C. W. Hong, and W. C. Liu,
“A compound semiconductor transistor-type hydrogen sensor with a Pd-oxide-In0.49Ga0.51P
(MOS) gate structure,” EDMS’2005,
Kaohsiung, pp. 50, 2005. (185)
P.
H. Lai, S. I. Fu, Y. Y. Tsai, C. W. Hong, C. H. Yen, and W. C. Liu,
“Characteristics of an sulfur-passivated AlGaAs/InGaAs/GaAs pseudomorphic
high electron mobility transistor (PHEMT),” EDMS’2005, Kaohsiung, pp. 50, 2005. (186)
W. C. Liu, S. I. Fu, S. Y. Cheng, P.
H. Lai, Y. Y. Tsai, and J. Y. Chen, “An InGaAs/InGaAsP composite-collector
heterojunction bipolar transistor (CCHBT),” EDMS’2005, (187)
D.
F. Guo, P. H. Lai, S. I. Fu, Y. Y. Tsai, C. W. Hong, and W. C. Liu,
“An InAlGaP bulk-barrier optoelectronic switch,” EDMS’2005, Kaohsiung, pp. 65, 2005. (188)
S.
Y. Cheng, S. I. Fu, Y. Y. Tsai, P. H. Lai, W. C. Liu, K. Y. Chu, and L. Y. Chen, “An
InGaP/AlXGa1-XAs/GaAs heterojunction bipolar transistor
(HBT) with different doping concentrations of AlxGa1-xAs
graded layers,” EDMS’2005, Kaohsiung,
pp. 75, 2005. (189)
S.
I. Fu, P. H. Lai, Y. Y. Tsai, C. W. Hong, C. H. Yen, and W. C. Liu,
“Characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with
sulfur treatment,” EDMS’2005, Kaohsiung,
pp. 76, 2005. (190)
D.
F. Guo, P. H. Lai, S. I. Fu, Y. Y. Tsai, C. W. Hong, and W. C. Liu,
“Electric and optical performances of a triangular-barrier resonant-tunneling
diode,” EDMS’2005, Kaohsiung, pp.
82, 2005. (191)
C.
W. Hung, K. W. Lin, Y. Y. Tsai, P. H. Lai, S. I. Fu, and W. C. Liu, “Hydrogen detection by a GaAs-based transistor
with a palladium (Pd) thin film gate structure,” International conference
on processing & manufacturing of advanced materials (THERMEC’2006),
Vancouver, Canada, pp. 480, 2006. (192)
P.
H. Lai, J. H. Tsai, S. I. Fu, Y. Y. Tsai, C. W. Hung, and W. C. Liu, “Characteristics of
a heterostructure field-effect transistor (HFET) with sulfur passivation on
gate surface,” International conference on processing & manufacturing
of advanced materials (THERMEC’2006), Vancouver, Canada, pp. 481, 2006. (193)
C. W. Hung, H. L. Lin, H. I. Chen, Y.
Y. Tsai, P. H. Lai, S. I. Fu, and W.
C. Liu, “Characteristics of a new resistive-type hydrogen sensor,” Extended Abstracts of the 2006
International Conference on Solid State Devices and Materials (SSDM2006),
Yokohama, pp. 328-329, 2006. (194)
C.
W. Hung, H. C. Chang, Y. Y. Tsai, K. H. Yu, and W. C. Liu, “InAlAs-based Schottky diode-type hydrogen
sensor,” IEDMS’2006 (Symposium A),
Tainan, pp. 48-49, 2006. (195)
P.
H. Lai, Y. W Huang, S. I. Fu, T. P. Chen, H. M. Chuang, and W. C. Liu, “Improved
performance of a sulfur-passivated pseudomorphic high electron mobility
transistor (PHEMT),” IEDMS’2006
(Symposium A), Tainan, pp. 74-75, 2006. (196)
C.
H. Yeng, D. F. Guo, P. H. Lai, S. I. Fu, C. W. Hung, and W. C. Liu, “Characteristics investigation of npn heterostructural
optoelectronic switches,” IEDMS’2006
(Symposium A), Tainan, pp. 76-77, 2006. (197)
S.
I. Fu, T. P. Chen, G. W. Ku, P. H. Lai, K. H. Yu, and W. C. Liu, “Improved characteristics of InGaP/GaAs a
heterojunction bipolar transistor (HBT) with composite passivation,” IEDMS’2006 (Symposium A), Tainan, pp.
92-93, 2006. (198)
Y.
Y. Tsai, C. W. Hung, H. C. Chang, K. H. Yu, and W. C. Liu, “A Pd-Al0.24Ga0.76As/GaAs
transistor-type hydrogen sensor,” IEDMS’2006
(Symposium A), Tainan, pp. 96-97, 2006. (199)
T.
P. Chen, S. I. Fu, S. Y. Cheng, K. Y. Chu, L. Y. Chen, L. A. Chen, and W. C. Liu, “An InGaP/AlXGa1-XAs/GaAs
heterojunction bipolar transistor (HBT) with different thickness of AlXGa1-XAs
graded layers,” IEDMS’2006 (Symposium
A), Tainan, pp. 98-99, 2006. (200)
T.
P. Chen, S. I. Fu, G. W. Ku, P. H. Lai, H. M. Chuang, and W. C. Liu,
“Temperature-dependent characteristics of an emitter-ledge passivated
InGaP/GaAs heterojunction bipolar transistor (HBT),” IEDMS’2006 (Symposium A), Tainan, pp. 113-114, 2006. (201)
J.
H. Tsai, T. Y. Weng, Y. C. Kang, C. H. Wu, I. H. Hsu, and W. C. Liu, “An InP/InGaAs pnp
heterostructure-emitter bipolar transistor with high current gain and low
offset voltage,” IEDMS’2006 (Symposium
A), Tainan, pp. 119-120, 2006. (202)
H.
I. Chen, Y. I. Chou, C. T. Lin, C. W. Hong, H. L. Lin, and W. C. Liu, “A new Pd/InGaP
transistor hydrogen sensor fabricated by electroless plating,” IEEE Sensors 2006, Daegu Exhibition &
Convention Center (EXCO), Daedu, Korea, pp. 65, 2006. (203)
H.
I. Chen, Y. I. Chou, S. W. Pan, Y. J. Chen, and W. C. Liu, “High-sensitivity Pd/GaN Schottky diode
hydrogen sensor fabricated by electroless plating,” IEEE Sensors 2006, Daegu Exhibition & Convention Center (EXCO),
Daedu, Korea, pp. 188, 2006. (204)
H.
I. Chen, Y. I. Chou, C. M. Chen, C. P. Chang, and W. C. Liu, “Characterizations of a novel electrophoretic
deposited nano-Pd/InP Schottky diode,” IEEE
Sensors 2006, Daegu Exhibition & Convention Center (EXCO), Daedu, Korea,
pp. 333, 2006. (205)
D.
F. Guo, J. H. Tsai, T. Y. Weng, C. H. Yeng, P. H. Lai, S. Y. Fu, C. W. Hung,
and W. C. Liu,
“Investigation on heterostructural optoelectronic switches,” 2nd International Symposium on
Function Materials, Hangzhou, China, pp. 101, 2007. (206)
S.
I. Fu, T. P. Chen, S. Y. Cheng, J. H. Tsai, and W. C. Liu, “Improved performance of a composite passivated
heterojunction bipolar transistor (HBT),” 2nd
International Symposium on Function Materials, Hangzhou, China, pp. 156,
2007. (207)
P.
H. Lai, Y. W. Huang, S. Y. Cheng, J. H. Tsai, and W. C. Liu, “Sulphur passivation on an InGaP/InGaAs/GaAs
pseudomorphic high electron mobility transistor (PHEMT),” 2nd International Symposium on
Function Materials, Hangzhou, China, pp. 157, 2007. (208)
C.
W. Hung, H. C. Chang, Y. Y. Tsai, K. W. Lin, H. I. Chen, and W. C. Liu, “A hydrogen sensor
based on an InAlAs material with a Pt catalytic thin film,” 2nd International Symposium on
Function Materials, Hangzhou, China, pp. 158, 2007. (209)
C.
W. Hung, T. H. Tsai, H. I. Chen, T. P. Chen, and W. C. Liu, “Hydrogen sensing properties of a
Pd/oxide/AlGaAs (MOS) field-effect resistive device,” 第十三屆化學感測器科技研討會, pp. 63-68, 2007. (210)
C. Y. Wu, C. T. Lin, Y. I. Chou, C.
C. Tung, W. C. Liu, and H.
I. Chen, “A high-sensitive Pd/InGaP transistor hydrogen
sensor,” Proceedings of the 37th European Solid-State Device Research
Conference (ESSDERC 2007), Munich, pp. 442-445, 2007. (211)
C.
W. Hung, H. I. Chen, T. P. Chen, T. H. Tsai, and W. C. Liu, “Hydrogen-sensing
behaviors of an InAlAs-Based Schottky diode with a Pt catalytic thin film,”
Extended Abstracts of the 2007 International Conference on Solid State
Devices and Materials (SSDM2007), Tsukuba, pp. 524-525, 2007. (212)
W. C. Liu, “Compound semiconductor
based hydrogen sensors,” 2007綠色能源研討會,2007. (213)
C.
F. Chang, C. H. Hsu, P. S. Chiu, T. H. Tsai, C. W. Hung, H. I. Chen, and W. C. Liu, “Hydrogen sensing
performance of a Pd/GaN Schotty diode-type sensor,” 2007綠色能源研討會, A01, 2007. (214)
D.
Y. Lu, H. S. Chang, L. Y. Chen, S. Y. Cheng, and W. C. Liu, “On the temperature-dependent characteristics
of an In0.46Ga0.54As/In0.42Al0.58As
of metamorphic high electron mobility transistor,” 2007綠色能源研討會, B01, 2007. (215)
W.
H. Chen, C. J. Lee, K. Y. Chu, S. Y. Cheng, and W. C. Liu, “Characteristics of an InGaP/GaAs
heterojunction bipolar transistor (HBTs) with sulfur treatment,” 2007綠色能源研討會, B03, 2007. (216)
W.
H. Chen, D. Y. Lu, C. H. Hsu, Y. C. Liu, C. J. Lee, T. P. Chen, and W. C. Liu, “Surface treatment
effect on InGaP/GaAs heterojunction bipolar transistor (HBTs),” 2007綠色能源研討會, B04, 2007. (217)
L.
Y. Chen, S. Y. Cheng, K. Y. Chu, C. W. Hung, T. P. Chen, T. H. Tsai and W. C. Liu,
“Temperature-dependent characteristics of metamorphic high electron mobility
transistors with different Schotty gate metals,” IEDMS’2007 (Symposium B), Hsinchu, B2-2, 2007. (218)
T.
P. Chen, C. W. Hung, K. Y. Chu, L. Y. Chen, T. H. Tsai and W. C. Liu, “An InP/InGaAs
double heterojunction bipolar transistor with a step-graded InAlGaAs
collector structure,” IEDMS’2007
(Symposium B), Hsinchu, B2-3, 2007. (219)
K.
Y. Chu, S. Y. Cheng, L. Y. Chen, C. W. Hung, T. P. Chen, T. H. Tsai and W. C. Liu, “A study of emitter
ledge length effects of InGaP/GaAs heterojunction bipolar transistor (HBTs),”
IEDMS’2007 (Symposium B), Hsinchu,
B2-4, 2007. (220)
C.
W. Hung, T. H. Tsai, H. I. Chen, L. Y. Chen, K. Y. Chu, and W. C. Liu, “Electrical and dynamic
analyses of a Pd-GaAs transistor-type hydrogen sensor,” IEDMS’2007 (Symposium B), Hsinchu, B3-1, 2007. (221)
Y.
Y. Tsai, K. W. Lin, C. W. Hung, T. H. Tsai and W. C. Liu, “A Pd-gate metal-semiconductor high electron
mobility transistor-type hydrogen sensor,” IEDMS’2007 (Symposium B), Hsinchu, B3-2, 2007. (222)
C. W. Hung, H. I. Chen, T. H. Tsai,
L. Y. Chen, K. Y. Chu, and W. C.
Liu, “A GaAs-based heterostructure field-effect
transistor-type hydrogen sensor in air and N2 ambiances,” 2007 IEEE International
Conference on Electron Devices and Solid-State Circuits (EDSSC), Tainan,
pp. 283-286 (OG01), 2007. (223)
Y. Y. Tsai, K. W. Lin, C. W. Hung,
T. H. Tsai, and W. C. Liu,
“A hydrogen gas Pt-In0.5Al0.5P metal-semiconductor
Schottky diode,” 2007 IEEE International Conference on Electron Devices and
Solid-State Circuits (EDSSC), Tainan, pp. 287-290 (OG02), 2007. (224)
T. P. Chen, K. Y. Chu, L. Y. Chen,
T. H. Tsai, C. W. Hung, and W. C.
Liu, “Temperature effect of a heterojunction bipolar
transistor (HBT) with an emitter-edge-thinning structure,” 2007 IEEE International
Conference on Electron Devices and Solid-State Circuits (EDSSC), Tainan,
pp. 717-720 (PE01), 2007. (225)
L. Y. Chen, K. Y. Chu, T. P. Chen,
C. W. Hung, T. H. Tsai, L. A. Chen, S. Y. Cheng, and W. C. Liu, “Thermal stability performance of
metamorphic high electron mobililty transistors (MHEMTs),” 2007 IEEE International
Conference on Electron Devices and Solid-State Circuits (EDSSC), Tainan,
pp. 721-724 (PE02), 2007. (226)
K. Y. Chu, L. Y. Chen, T. P. Chen,
C. W. Hung, T. H. Tsai, L. A. Chen, S. Y. Cheng, and W. C. Liu, “Reduction of surface
recombination current by optimized ledge technology,” 2007 IEEE International Conference on
Electron Devices and Solid-State Circuits (EDSSC), Tainan, pp. 725-728
(PE03), 2007. (227)
T. H. Tsai, H. I. Chen, K. W. Lin,
C. W. Hung, T. P. Chen, L. Y. Chen, K. Y. Chu, and W. C. Liu, “A Pt/GaN Schottky diode-type
hydrogen sensor with a thin SiO2-passivated metal/semiconductor junction,” 2008 International
Workshop on Junction Technology (IWJT2008), Shanghai, pp. 164-167, 2008. (228)
T. P. Chen, W. H. Chen, K. Y. Chu,
L. Y. Chen, C. J. Lee, S. Y. Cheng, J. H. Tsai, and W. C. Liu, “Investigation of InP/InGaAs
double heterojunction bipolar transistor (DHBT) with a step-graded
InAlGaAs/InP collector structure,” 2008 International Workshop on Junction
Technology (IWJT2008), Shanghai, pp. 168-171, 2008. (229)
K. Y. Chu, S. Y. Cheng, T. P. Chen,
L. Y. Chen, T. H. Tsai, J. H. Tsai, and W.
C. Liu, “Influence of emitter ledge width on the
characteristics of InP/GaAs heterojunction bipolar transistors,” 2008 International
Workshop on Junction Technology (IWJT2008), Shanghai, pp. 176-178, 2008. (230)
C. W. Hung, H. I. Chen, K. W. Lin,
T. H. Tsai, T. P. Chen, L. Y. Chen, K. Y. Chu, and W. C. Liu, “A Pd/oxide/AlGaAs (MOS) junction
resistor-type hydrogen sensor,” 2008 International Workshop on Junction Technology (IWJT2008),
Shanghai, pp. 179-182, 2008. (231)
L. Y. Chen, S. Y. Cheng, K. Y. Chu,
J. H. Tsai, T. P. Chen, T. H. Tsai, and W.
C. Liu, “Improved formal passivations of Pseudomorphic high
electron mobility transistors,” 2008 International Workshop on Junction Technology (IWJT2008),
Shanghai, pp. 183-186, 2008. (232)
Tsung-Han
Tsai, Chung-Fu Chang, Chi-Jhung Lee, Po-Shun Chiu, Po-Cheng Chou, and Wen-Chau Liu, “Hydrogen
sensing characteristics of a Pd-AlGaN-based Schotky diode-type hydrogen
sensor,” IEDMS’2008 (Session B),
Taichung, B319, 2008. (233)
Tzu-Pin
Chen, Chi-Jhung Lee, Po-Shun Chiu, Chung-Fu Chang, Po-Cheng Chou, and Wen-Chau Liu, “Enhancement breakdown
performance of an InP/InGaAs double heterojunction bipolar transistor (DHBT)
using a composite collector structure,” IEDMS’2008
(Session B), Taichung, B326, 2008. (234)
Li-Yang
Chen, Shiou-Ying Cheng, Chi-Jhung Lee, Chung-Fu Chang, Po-Shun Chiu, Po-Cheng Chou, and Wen-Chau Liu, “A non-anealed
Ohmic-recess metamorphic high electorn mobility transistor,” IEDMS’2008 (Session B), Taichung,
B370, 2008. (235)
Yi-Jung
Liu, Tsung-Yuan Tsai, Shiuo-Ying Cheng, Jung-Hui Tsai, Kun-wei Lin, Wen-Chau Liu, “On a light
emitting diode with KOH-treated textured sidewalls and air-buffer
structures,” NANO’2009 (Oral Session ),
Harbin ,2009 (236)
Tsung-Han
Tsai, Chung-Fu Chang, Po-Shun Chiu, Huey-Ing Chen, Kun-Wei Lin, Shiou-Ying
Cheng, Jung-Hui Tsai, Kun-Wei Lin, Wen-Chau
Liu, “SiO2-passivation based hydrogen gas detector,” NANO’2009 (Poster Session ), Harbin ,2009. (237)
Tzu-Pin
Chen, Chi-Jhung Lee, Shiuo-Ying Cheng, Jung-Hui Tsai, Kun-wei Lin, Wen-Chau Liu, “On a InP/InGaAs
heterostructure transistor with an InAlGaAs/InP step-graded heterostructure
collector,”NANO’2009 (Poster Session ),
Harbin ,2009 (238)
Li-Yang
Chen, Chien-Chang Huang, Shiou-Ying Cheng, Jung-Hui Tsai, Kun-wei Lin, and Wen-Chau Liu, “High
performance heterostructure transistor with graded δ-doped,” NANO’2009 (Poster Session ), Harbin, 2009. (239)
Jung-Hui
Tsai, Der-Feng Guo, Ning-Xing Su, Yin-Shan Huang, and Wen-Chau Liu, “High device linearity of pseudomorphic
doped-channel field-effect transistor using InGaP/GaAs/InGaAs camel-like gate
heteristructure,” NANO’2009 (Poster Session ), Harbin, 2009. (240)
Ping-Jia
Lin, Yen-I Chou, Wen-Chau Liu,
Chieng-Chi Tung, and Huey-Ing Chen, “Ethanol Vapor Sensors Based on Carboxyl-
alkanethiolate Self-Assembled Monolayers Modified Au/GaAs Schottky Diodes,” 2009 Institute of Electrical and
Electronic Engineers Conference on Sensors (IEEE Sensors), New Zealand,
2009. (241)
Tsung-Han
Tsai, Tai-You Chen, Chi-Hsiang Hsu, Chien-Chang Huang, Jian-Sheng Wu,
Cheng-Wei Lin, Kai-Siang Hsu, Huey-Ing Chen, and Wen-Chau Liu, “A Hydrogen Sensor Based on a Metamorphic
High Electron Mobility Transistor (MHEMT),” IEDMS’2009 (Symposium E), Taoyuag, 2009. (242)
Li-Yang
Chen, Chien-Chang Huang, Tai-You Chen, Chi-Hsiang Hsu, You-Chi Chen, Yung-Jen
Chiou, Shiou-Ying Cheng, and Wen-Chau
Liu, “Thermal-Stability Performance of a Pseudomorphic High Electron
Mobility Transistor with a Low-Temperature Deposition Approach,” IEDMS’2009 (Symposium B), Taoyuag,
2009. (243)
Yi-Jung
Liu, Tsung-Yuan Tsai, Jung-Hui Tsai, Wen-Shiung Lour, Chi-Hsiang Hsu, Tai-You
Chen, Chien-Chang Huang, and Wen-Chau
Liu, “Low-Damage GaN-Based Light-Emitting Diodes with KOH Treatment,”
IEDMS’2009 (Symposium D), Taoyuag,
2009. (244)
Tai-You
Chen, Tsung-Han Tsai, Chih-Chieh Chien1, Huey-Ing Chen, Kun-Wei Lin,
Shiou-Ying Cheng, Wen-Chau Liu,
“NH3 sensing properties of vertically-aligned ZnO nanorods with
uniformlydeposited Pt nanoparticles,” E-MRS
2010 Spring Meeting (Symposium P), Strasburg, 2010. (245)
Yi-Jung
Liu, Huey-Ing Chen, Shiou-Ying Cheng, Kun-Wei Lin, and�Wen-Chau
Liu,
“Investigation of GaN-Based Light-Emitting Diodes Grown on Vicinal Sapphire
Substrates,” E-MRS 2010 Spring Meeting
(Symposium G), Strasburg, 2010. (246)
Chien-Chang
Huang, Li-Yang Chen, Shiou-Ying Cheng, Kun-Wei Lin, Huey-Ing Chen, Wen-Chau Liu, “On an AlGaN/GaN
High Electron Mobility Transistor (HEMT) with an Electroless-Plated (EP)
Surface Treated Gate Structure,” E-MRS
2010 Spring Meeting (Symposium K), Strasburg, 2010. (247)
Chien-Chang
Huang, Huey-Ing Chen, Shiou-Ying Cheng, Kun-Wei Lin, Yi-Jung Liu, Tai-You
Chen, Chi-Shiang Hsu, and Wen-Chau
Liu, “Characteristics of a Pseudomorphic High Electron Mobility
Transistor (PHEMT) with a Low-Temperature Gate Deposition Approach,” IUMRS-ICA 2010 (Poster Session),
Tsingtao, 2010. (248)
Tai-You
Chen, Huey-Ing Chen, Kun-Wei Lin, Shiou-Ying Cheng, Chien-Chang Huang,
Chi-Shiang Hsu, Yi-Jung Liu, and Wen-Chau
Liu, “A Metamorphic High Electron Mobility Transistor (MHEMT)-Type
Hydrogen Gas Sensor,” IUMRS-ICA 2010
(Poster Session), (249)
Yi-Jung
Liu, Chien-Chang Huang, Tai-You Chen, Chi-Hsiang Hsu, Shiou-Ying Cheng,
Kun-Wei Lin, and Wen-Chau Liu,
“Improved Performance of GaN-Based Light-Emitting Diodes by Using
Short-Period Superlattice Structures,” IUMRS-ICA
2010, (250)
Chien-Chang
Huang, Tai-You Chen, Chi-Shiang Hsu, Yi-Jung Liu, Yung-Jen Chiou, Chun-Chia
Chen, and Wen-Chau Liu,
“Characteristics of a Pseudomorphic High Electron Mobility Transistor with an
Electroless Plating Approach,” IEDMS’2010
(Poster Session), Zhongli, 2010. (251)
Tai-You
Chen, Yi-Jung Liu, Chien-Chang Huang, Chi-Shiang Hsu, Kei-Siang Hsu,
Cheng-Wei Lin, Po-Cheng Chou, and Wen-Chau
Liu, “Hydrogen Sensing Performance of a Pd/AlGaN-Based Schottky Diode
with SiO2 Passivaion,” IEDMS’2010
(Poster Session), Zhongli, 2010. (252)
Chi-Shiang
Hsu, Yi-Jung Liu, Tai-You Chen, Chien-Chang Huang, Kei-Siang Hsu, Cheng-Wei
Lin, Po-Cheng Chou, and Wen-Chau
Liu, “A Pd/Oxide/AlGaAs HEMT-Based Hydrogen Sensor Detecing System,” IEDMS’2010 (Poster Session), Zhongli,
2010. (253)
Tai-You
Chen, Jian-Sheng Wu, Chi-Shiang Hsu, Po-Cheng Chou,Huey-Ing Chen, Kun-Wei Lin,
and Wen-Chau Liu, “ZnO
nanorods based ammonia gas sensors with interdigitized electrodes,” ICFNST 2011 (Oral Session), Dali, 2011. (254)
Chien-Chang
Huang, Chun-Chia Chen, Jian-KaI Liou, Po-Cheng Chou, Huey-Ing Chen,
Shiou-Ying Cheng, and Wen-Chau Liu,
“Performance of a GaAs-Based
Pseudomorphic High Electron Mobility Transistor (PHEMT) with an
Electroless-Plated Treated Gate,” ICFNST
2011 (Oral Session), Dali, 2011. (255)
Jian-Kai
Liou, Yi-Jing Liu, Shiou-Ying Cheng, Po-Cheng Chou, Chiun-Chia Chen, and Wen-Chau Liu, “Performance on
GaN-Based Light-Emitting Diodes with Different Substrate Tilt Angles,” ICFNST 2011 (Oral Session), Dali,
2011. (256) Tai-You
Chen, Chung-Fu Chang, Po-Cheng Chou, Chun-Chia Chen, Jian-Kai Liou, and Wen-Chau Liu, “Ammonia
Sensing Performance of a Pt/AlGaN/GaN-Based Schottky Diode, ” IEDMS’2011 (Poster Session), Taipei,
2011. (257) Chien-Chang
Huang, Chun-Chia Chen, Po-Cheng Chou, Jian-Kai Liou, and Wen-Chau Liu, “Thermal-Stability Performance of an
Electroless-Plated (EP) Based Pseudomorphic High Electron Mobility Transistor
(PHEMT),” IEDMS’2011 (Poster Session), |
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A.
National Science Council Projects ·
The
Fabrication of High-Performance Heterostructure Field-Effect Transistors
(HFETs)(2/3) NSC-92-2215-E-006-007 08/2003~07/2004 ·
Fabrication
of Heterojunction Bipolar Transistors with Improved Performances
NSC-92-2218-E-006-032 08/2003~07/2004 ·
The
Fabrication of High-Performance Heterostructure Field-Effect Transistors
(HFETs)(3/3) NSC-93-2215-E-006-002 08/2004~07/2005 ·
Fabrication
of High-Performance Compound Semiconductor Heterostructure Field-Effect
Transistors (HFETs) NSC-94-2215-E-006-060 08/2005~07/2006 ·
Development
and Fabrication of GaAs-Based High-Performance Hydrogen Sensors for
Bio-Medical Applications (1/2) NSC-95-2221-E-006-426-MY2 08/2006~07/2007 ·
Fabrication
of Compound Semiconductor Heterostructure Field-Effect Transistors (HFETs)
(1/2) NSC-95-2221-E-006-434-MY2 08/2006~07/2007 ·
Development
and Fabrication of GaAs-Based High-Performance Hydrogen Sensors for
Bio-Medical Applications (2/2) NSC-95-2221-E-006-426-MY2 08/2007~07/2008 ·
Fabrication
of Compound Semiconductor Heterostructure Field-Effect Transistors (HFETs)
(2/2) NSC-95-2221-E-006-434-MY2 08/2007~07/2008 ·
Fabrication
of ppm-level Compound Semiconductor Based Gas Sensors for Biomedical
Applications (1/3) NSC-97-2221-E-006-237-MY3 08/2008~07/2009 ·
Fabrication
of Heterostructure Field-Effect Transistors (HFETs) with Low-Temperature
Schottky Contact Processes (1/3) NSC-97-2221-E-006-238-MY3 08/2008~07/2009 ·
Fabrication
of ppm-level Compound Semiconductor Based Gas Sensors for Biomedical
Applications (2/3) NSC-97-2221-E-006-237-MY3 08/2009~07/2010 ·
Fabrication
of Heterostructure Field-Effect Transistors (HFETs) with Low-Temperature
Schottky Contact Processes (2/3) NSC-97-2221-E-006-238-MY3 08/2009~07/2010 ·
The
Application of texturing GaN-based LEDs By Using Sputtered/Hydrothermal ZnO
Nanorods NSC-98-2622-E-006-045-CC3 11/2009~10/2010 ·
Fabrication
of High-Performance Light Emitting Diodes NSC-98-E-006-015-C2
10/2009~09/2010 ·
Fabrication
of ppm-level Compound Semiconductor Based Gas Sensors for Biomedical
Applications (3/3) NSC-97-2221-E-006-237-MY3 08/2010~07/2011 ·
Fabrication
of Heterostructure Field-Effect Transistors (HFETs) with Low-Temperature
Schottky Contact Processes (3/3) NSC-97-2221-E-006-238-MY3 08/2010~07/2011 ·
Fabrication
of High-Performance Compound Semiconductor Based Chemical Sensors (1/3)
NSC--100-2221-E-006-044-MY3 08/2011~07/2012 |
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A. Students ²
Graduate： · P.H.D.：Wen-Shiung Lour, Chung-Yih Sun,
Der-Feng Guo, Jung-Hui Tsai, Lih-Wen Laih, Shiou-Ying Cheng, Wen-Lung Chang, Wei-Chou Wang, Hsi-Jen Pan,
Kuo-Hui Yu, Kong-Beng Thei, Kun-Wei Lin, Hung-Ming Chuang, Chun-Yuan Chen, Chin-Chuan Cheng, Jing-Yuh
Chen, Po-Hsien Lai, Ssu-I Fu,
Yan-Ying Tsai, Ching-Wen Hung, Chih-Hung Yen, Tzu-Pin Chen, Li-Yang Chen, Tsung-Han
Tsai, Yi-Chun Liu · Master：Chung-Yih
Sun(78), Chin-Hsi Lin(79), Janne-Wha Wu(79), Der-Feng Guo(80), Yeong-Shyang
Lee(80), S. R. Yih(83), Jing-Tong Liang(83), G. M. Lyuu(84), Kong-Beng
Thei(85), Cheng-Zu Wu(85), Chin-Chuan Cheng(86), Kun-Wei Lin(86), Hui-Jung
Shih(86), Jing-Yuh Chen(87), Wei-Chou Wang(87), Po-Hung Lin(87), Yung-Hsin
Shie(88), Shun-Ching Feng(89), Kuan-Po Lin(90), Chih-Hung Yen(90), Wen-Huei
Chiou(91), Chun-Yuan Chen(91), Chih-Kai Wang(91), Kuan-Ming Lee(92), Xin-Da
Liao(92), Chun-Tsen Lu(92), Sheng-Fu Tsai(92), Po-Hsien Lai(93), Ssu-I Fu(93), Yan-Ying Tsai(93), Chung-I Kao(94),
Chi-Yuan Chang(94), Ching-Hsiu Tsai(94), Wei-Hsi Hsu(94), Chun-Wei Chen(95),
Tzu-Pin Chen(95), Han-Lien Lin(95), Yi-Wen Huang(96), Yi-Wen Huang(96),
Ghun-Wei Ku(96), Hung-Chi Chang(96), Chia-Hao Hsu(97), Wei-Hsin Chen(97),
Dian-Yang Lu (97), Hsuan-Sheng Chang(97), Yi-Chun Liu(97), Chung-Fu
Chang(98), Chi-Jhung Lee(98), Po-Shun Chiu(98), Zong-Yuan Tsai(99), Jian-Sheng
Wu(99), Yung-Jen
Chiou(100), Kai-Siang Hsu(100), Cheng-Wei Lin(100) ²
Active： · P.H.D.：Xin-Da Liao, Kuei-Yi · Master：Yu-Chih Chang(102), Cheng-Yen Hsieh(102), Yu-Ting
Tsai(102), Cheng-Jing Lai(102) |
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