|
|
§õ²M®x ±Ð±Â |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
96¾Ç¦~«×²Ä¤@¾Ç´Á ¡P ¹q¤l¾Ç(¢¹) 96¾Ç¦~«×²Ä¤G¾Ç´Á(µL¶}½Ò) 97¾Ç¦~«×²Ä¤@¾Ç´Á ¡P ¹q¤l¾Ç(¢¹) 97¾Ç¦~«×²Ä¤G¾Ç´Á(µL¶}½Ò) 98¾Ç¦~«×²Ä¤@¾Ç´Á ¡P ¹q¤l¾Ç( I ) 98¾Ç¦~«×²Ä¤G¾Ç´Á 99¾Ç¦~«×²Ä¤@¾Ç´Á |
|
|
|
|
|
¡P ¬ü°ê Carnegie Mellon University ¹q¾÷³Õ¤h¡]1982¦~¡^ ¡P ¦¨¥\¤j¾Ç¹q¾÷¬ã¨s©ÒºÓ¤h¡]1974¦~¡^ ¡P ¦¨¥\¤j¾Ç¹q¾÷¨t¾Ç¤h¡]1972¦~¡^ |
|
|
|
|
|
1.
¤¤°ê¹q¾÷¤uµ{¾Ç·|·|û(1976¦~¨´¤µ) 2.
¤¤°ê¤uµ{®v¾Ç·|·|û(1976¦~¨´¤µ) 3.
¤¤µØ¥Á°ê¥ú¾Ç¤uµ{¾Ç·|¥Ã¤[·|û(1992¦~¨´¤µ) 4.
¥xÆW¹q¤l§÷®Æ»P¤¸¥ó¨ó·|·|û(1994¦~¨´¤µ) 5.
¤¤°ê§÷®Æ¬ì¾Ç¾Ç·|¥Ã¤[·|û(1996¦~¨´¤µ) 6.
IEEE
Senior Member(1997¦~~2008¦~) 7.
IEEE/LEOS
¥xÆW¤À·|°]°Èªø(1999¦~¦Ü2000¦~) 8.
IEEE/LEOS
¥xÆW¤À·|°Æ·|ªø(2001¦~¦Ü2002¦~) 9.
¤¤µØ¥Á°ê¥ú¾Ç¤uµ{¾Ç·|²z¨Æ(2001¦~¨´¤µ) 10. ¤¤µØ¥Á°ê¯uªÅ¬ì§Þ¾Ç·|²z¨Æ (2001¦~¨´¤µ) 11. IEEE/LEOS ¥xÆW¤À·|·|ªø(2003¦~¦Ü2004¦~) 12. °ê¬ì·|¥ú¹q¾Çªù¥l¶°¤H(2003¦~¦Ü2005¦~) 13. ¬F©²«¤j¬ì§Þpµe¼f¬d©eû(1998¦~¨´¤µ) 14. ¦Ò¸Õ°|¤½°È¤Hû°ªµ¥º[´¶³q¦Ò¸Õ¨å¸Õ©eû(1998¦~, 2007¦~) 15. ¥xÆW¹q¤l§÷®Æ»P¤¸¥ó¨ó·|²z¨Æªø(2005¦~¦Ü2006¦~) 16. IEEE¥x«n¤À·|°Æ·|ªø(2005¦~¦Ü2007¦~) 17. ¸gÀÙ³¡§Þ³N³B¹ªÀy¤¤¤p¥ø·~¶}µo·s§Þ³N±À°Êpµe¥l¶°¤H(2006¦~¦Ü2007¦~) 18. ¸gÀÙ³¡¶Ç²Î²£·~¹q¤l»â°ì¥l¶°¤H(2006¦~¦Ü2007¦~) 19. °ê®a¹êÅç¬ã¨s°|©`¦Ì¤¸¥ó¹êÅç«Ç¿Ô¸ß©eû(2006¦~¦Ü2008¦~) 20. ¸gÀÙ³¡§Þ³N³B¤Î¤u·~§½¬ì±Mpµep¼f©eû(2006¦~¦Ü2009¦~) 21. ¥xÆW¹q¤l§÷®Æ»P¤¸¥ó¨ó·|±`°È²z¨Æ(2007¦~¨´¤µ) 22.
¤¤°ê¹q¾÷¤uµ{¾Ç·|理¨Æ¤Î¾Ç³N¬ã¨s©eû·|©eû(2007¦~¨´¤µ) 23.
¥xÆW¥ú¾Ç¤uµ{¾Ç·|理¨Æ(2008年~¨´¤µ) 24. IEEE¥x«n¤À·|²z¨Æ(2008¦~¨´¤µ) 25. IEET¤uµ{»{ÃÒ²z¨Æ¤Î¹Î¥D®u(2008¦~~¨´¤µ) 26. Internal Journal of Innovation Computer,
Information and Control, Associated Editor (2008¦~~¨´¤µ) 27.
¥xÆW¹q¤l§÷料»P¤¸¥ó¨ó·|±`°È理¨Æ(2009年~¨´¤µ) 28. ¥xÆW¯uªÅ¾Ç·|°Æ理¨Æªø(2009年~2010¦~) 29. °ê¬ì·|¤uµ{³B³Bªø (2010¦~~¨´¤µ) 30. IEEE Photonics Technology Letters,
Associated Editor (2010¦~~¨´¤µ) |
|
|
|
|
|
¡P ¥ú¹q¥b¾ÉÅ餸¥ó»P¨t²Î ¡P °ª³t¹q¤l¤¸¥ó»P¨t²Î ¡P ©`¦Ì§÷®Æ»P¤¸¥ó ¡P ¤Ó¶§¯à¤¸¥ó»P¨t²Î ¡P ¹qºÏ·P´ú¥ú¹q¤¸¥ó ¡P ¦³¾÷µo¥ú¤G·¥Åé¤ÎÁ¡½¤¹q´¹Åé |
|
|
|
|
|
1.
ºaÀò1999¦~¥ú¾Ç¤Î¥ú¤l¬ã°Q·|½×¤å¼ú 2.
ºaÀò1999¦~¤¤°ê¤uµ{®v¾Ç·|½×¤å¼ú 3.
ºaÀò1999~2001¦~°ê¬ì·|³Ç¥X¬ã¨s¼ú 4.
ºaÀò2002~2004¦~°ê¬ì·|³Ç¥X¬ã¨s¼ú 5.
ºaÀò2000¦~°ê»Ú¹q¤l§÷®Æ¤Î¤¸¥ó·|ij³Ç¥X½×¤å¼ú 6.
ºaÀò2001¦~¤¤µØ¥Á°ê¯uªÅ¬ì§Þ¦~·|³Ç¥X½×¤å¼ú 7.
ºaÀò2002¦~¥[®³¤j°ê®a¬ã¨s°|(National
Research Council, NRC)Á¿®y±Ð±Â¡C 8.
ºaÀò2002¦~¤¤µØ¥Á°ê¥ú¾Ç¤uµ{¾Ç·|¥ú¾Ç¤uµ{¼ú³¹ 9.
ºaÀò2002¦~Àò±o¹q¤l¤¸¥ó¤Î§÷®Æ¨ó·|³Ç¥XªA°È¼ú 10.ºaÀò2003¦~¤¤°ê¹q¾÷¤uµ{¾Ç·|³Ç¥X¹q¾÷¤u 11.ºaÀò2004 ~¨´¤µ°ê¥ß¦¨¥\¤j¾Ç¯S¸u±Ð±Â 12.ºaÀò2005¦~°ê¬ì·|²Ä¤@¯Å¥D«ù¤H 13.ºaÀò2006¦~¥xÆW¥ú¹q¬ì§Þ¬ã°Q·|³Ç¥X½×¤å¼ú 14.ºaÀò2006¦~°ê»Ú¹q¤l§÷®Æ¤Î¤¸¥ó·|ij½×¤å¼ú 15.ºaÀò2007¦~¤¤µØ¥Á°ê¯uªÅ¬ì§Þ¦~·|³Ç¥X½×¤å¼ú 16.ºaÀò2007¦~¤¤°ê§÷料¬ì¾Ç年·|³Ç¥X½×¤å¼ú 17.ºaÀò2007¦~¦¨¥\¤j¾Ç±Ð¾ÇÀu¨}¼ú 18.ºaÀò2009¦~°ê»Ú¹q¾÷¹q¤l¤uµ{®v¾Ç·|¤§¹q¤l¤¸¥ó¾Ç·|·|¤h(IEEE
Electronic Devices Society Fellow) 19.ºaÀò2009¦~°ê»Ú¹q¾÷¹q¤l¤uµ{®v¾Ç·|¤§¹p®g»P¥ú¹q¾Ç·|·|¤h(IEEE LEOS Fellow) 20.ºaÀò2009¦~¤¤°ê§÷料¬ì¾Ç年·|³Ç¥X論¤å¼ú 21.ºaÀò2010¦~¦¨¥\¤j¾Ç§Þ³N²¾Âà¤Î²£¾Ç¦X§@¦¨ªGÁZÀu¼ú 22.ºaÀò2010¦~¤¤°ê¤uµ{®v¾Ç·|³Ç¥X¤u 23.ºaÀò2010¥xÆW¯uªÅ¾Ç·|·|û¤j·|º[½×¤åµoªí·|¨Î§@¼ú 24.ºaÀò2010¦~¥xÆW¥ú¹q¬ì§Þ¬ã°Q·|Àu¨q½×¤å¼ú 25.ºaÀò2010¦~¨â©¤¥ú¹q¬ã²ßÀç¨H¾¥¼ú(³Ì¨Î®ü³ø) 26. ºaÀò2011¦~¤uµ{»P§Þ³N¾Ç·|·|¤h(Institute of Engineering and Technology
Fellow) 27. ºaÀò2011¥ú¹q»P³q°T°ê»Ú¬ã°Q·|Àu¨q½×¤å¼ú 28. ºaÀò2011¦~¦³«Ö¬ì§ÞÁ¿®y¼ú(Yu-Ziang Hsu Scientific Chair Professor) 29. ºaÀò2011¦~§õ°ê¹©ºaÅA¾ÇªÌ¼ú(Kwoh-Ting Li Honorary Scholar Award) 30.ºaÀò2011¦~¦~¥xÆW¯uªÅ¬ì§Þ¦~·|³Ç¥X½×¤å¼ú 31.ºaÀò2010¦~¦~¥xÆW¥ú¹q¬ì§Þ¬ã°Q·|Àu¨q½×¤å¼ú(¨â½g½×¤å±o¼ú) |
|
|
|
|
|
01. §õ²M®x, ¥Á°ê90¦~, ¡§¤@ºØ¥Î©óªi¾É¤¤¤§¨C¤@¼ÒºA·l¥¢¤§«D¯}Ãa©Ê´ú¶q¤èªk¡¨
¤¤µØ¥Á°êµo©ú±M§Q®×¸¹123585. 02. §õ²M®x, ¥Á°ê90¦~,¡§¤Æ¦Xª«¥b¾ÉÅé¸Ë¸m¤Î¨ä»s§@¤èªk¡¨,¤¤µØ¥Á°êµo©ú±M§Q®×¸¹140784. 03. Ching-Ting
Lee, 2001, ¡§Nondestructive
measurement method of individual modes loss for waveguides¡¨, ¬ü°ê±M§Q, United States Patent US6219475 B1. 04. Ching-Ting Lee, 2002, ¡§Method for manufacturing
III-nitride semiconductor devices¡¨, ¬ü°ê±M§Q, United States Patent US6486050. B1 05. Ching-Ting Lee, 2003, ¡§Method for manufacturing a compound
semiconductor device¡¨, ¬ü°ê±M§Q,
United States Patent US6531383. B1. 06. Ching-Ting Lee, 2004, ¡§°ò¤_´á¤ÆñSªºIII-V±Ú¤Æ¦Xª«¥b¾ÉÅé¸Ë¸mªº»s³y¤èªk¡¨, ¤j³°±M§Q®×¸¹00126376.5. 07. Ching-Ting Lee, 2001, ¡§Method for manufacture a compound
semiconductor device¡¨, ¼w°ê±M§Q®×¸¹100
48 196.5. 08. Ching-Ting Lee, 2001, ¡§Compound semiconductor devices and
fabrication method¡¨, Áú°ê±M§Q®×¸¹2000-60963.
09. Ching-Ting Lee, 2001, ¡§Method for manufacture a compound semiconductor
device¡¨, ¤é¥»±M§Q¥Ó½Ð¤¤. 10. §õ²M®x, ¥Á°ê92¦~, ¡§III±Ú-´á±Ú¥b¾ÉÅ餸¥ó»s³y¤èªk¡¨,
¤¤µØ¥Á°êµo©ú±M§Q®×¸¹177507. 11. Ching-Ting Lee, 2007, ¡§Method for manufacturing
III-nitride semiconductor devices¡¨, ¤é¥»±M§Q®×¸¹3905423. 12. Ching-Ting Lee, 2002, ¡§Method for manufacturing
III-nitride semiconductor devices¡¨, ¼w°ê±M§Q¥Ó½Ð¤¤. 13. ¼B¥N¤s¡B§õ²M®x¡B§d«T¼y¡BªL«T¿³¡A¥Á°ê97¦~¡A¡§¤@ºØ®gÀW¦@ÂqÁá¤è¦¡¨I¿n»s³y¶ì½¦°òªO¾É¹qÁ¡½¤¤§¸Ë¸m¡¨¡A ¤¤µØ¥Á°êµo©ú±M§Q®×¸¹
I 295325¡C 14. ¼B¥N¤s¡B§õ²M®x¡B³\¥[ª@¡B½²´I¶v¡A
¥Á°ê99¦~¡A¡§P«¬®ñ¤Æ¾NÁ¡½¤»s§@¤èªk»P¨t²Î¡¨¡A ¤¤µØ¥Á°êµo©ú±M§Q®×¸¹ I 319595¡C 15. ±i¥»¨q¡B±i³sÂz¡B§õ²M®x¡B¿c«H冲¡B³¯¤DÅv¡B§d°ê±ö¡Bªô¦w¥, ¥Á°ê98¦~¡A¡¨³z©ú¤Ó¶§¯à¹q¦À¨t²Î¡¨¡A ¤¤µØ¥Á°êµo©ú±M§Q®×¸¹ I 313068¡C 16. §õ²M®x, ¥Á°ê99¦~¡A"¨ã¦³·L´¹µ²ºc¤§ª¿Á¡½¤ªº§Î¦¨¤èªk"¡A ¡A¤¤µØ¥Á°ê±M§Q¥Ó½Ð¤¤¡C 17. Ching-Ting Lee, 2011, "Method for forming silicon film having microcrystal", ¬ü°ê±M§Q¥Ó½Ð¤¤¡C. |
|
|
|
|
|
(A) ´Á¥Z½×¤å Referred Paper 01.
J. W. Wu, C. Y. Chang, K. C. Lin, E. Y. Chang, J. S. Chen and C. T. Lee,
"The Thermal Stability of Ohmic Contact to n-type InGaAs Layer", J.
Electron. Mater., vol. 24, pp.79-82 (1995)SCI pµe½s¸¹ :
NSC83-0417-E009-016 02.
C. T. Lee, H. P. shiao and Y. C. Chou, "MESFET Performance and
Limitations of Optimized GaAs Strained Buffer Layer Grown on InP by Molecular
Beam Epitaxy", Solid-State Electron., vol. 38, pp.1529-1531(1995)SCI pµe½s¸¹ : NSC84-2623-D008-001 03.
C. C. Chu, Y. J. Chan, R. H. Yuang, J. I. Chyi and C. T. Lee,
"Performance Enhancement Using WSiX/ITO Electrodes in InGaAs/InAlAs MSM
Photodetectors", Electron. Lett., vol. 31, pp.1692-1694 (1995)SCI pµe½s¸¹ : NSC84-2215-E008-003 04.
C. T. Lee, C. D. Tsai, C. Y. Wang, H. P. Shiao, T. E. Nee and J. N. Shen,
"Sidegating Effect Improvement of GaAs Metal-Semiconductor Field Effect
Transistor by Multiquantum Barrier Structure", Appl. Phys. Lett. vol.
67, pp. 2046-2048 (1995)SCI pµe½s¸¹ :
NSC84-2623-D008-001 05. H. P. Shiao, C. Y. Wang, Y. K. Tu, W.
Lin and C. T. Lee, "InGaP/GaAs Multiquantum Barrier Structures Prepared
by Low-Pressure Organometallic Vapor Phase Epitaxy", Solid-State
Electron., vol. 38, pp. 2001-2004 (1995) SCI 06.
J. D. Guo, C. I. Lin, M. S. Feng, F. M. Pan, G. C. Chi and C. T. Lee, "A
Bilayer Ti/Ag Ohmic Contact for Highly Doped n-type GaN Films", Appl.
Phys. Lett. vol. 68, pp. 235-237 (1996) SCI pµe½s¸¹ :
NSC84-2215-E009-084 07.
C. Y. Wang, Z. M. Chung, W. Lin, Y. K. Tu and C. T. Lee, "Low Chirp and
High Power 1.55 mm Strained-Quantum-Well Complex-Coupled DFB Laser", IEEE Photon. Technol.
Lett., vol. 8, pp. 331-333 (1996)
SCI 08.
C. T. Lee, P. L. Fan and J. C. Lee, "Design of the Spot Size for Single
Mode Ti/Mg:LiNbO3 Channel Waveguide for Optimum Coupling with Fiber",
Fiber Integra. Opt., vol. 15, pp. 149-158 (1996) SCI pµe½s¸¹ : NSC84-2215-E008-006 09.
Y. L. Lai, E. Y. Chang, C. Y. Chang, T. K. Chen, T. H. Liu, S. P. Wang, T. H.
Chen and C. T. Lee, "5mm
High-Power-Density Dual-Delta-Doped Power HEMTS for 3V L-Band
Applications", IEEE Electron Device Lett., vol. 17, pp. 229-231
(1996)SCI pµe½s¸¹ : NSC84-2215-E009-024 10.
C. T. Lee, H. C. Lee, H. H. Lai and L. G. Sheu, "Complementary Optical
Bistable Operation with Integration of Two Directional Couplers on LiNbO3
Crystal", Jpn. J. Appl. Phys., vol. 35, pp. 2686-2689 (1996)SCI pµe½s¸¹ : NSC85-2215-E008-002 11.
C. T. Lee, J. H. Yeh and Y. T. Lyu, "Characterization of Nd Doped AlGaAs
Grown by Liquid Phase Epitaxy", J. Crystal Growth, vol. 163, pp. 343-347
(1996)
SCI 12.
L. G. Sheu, C. T. Lee, and H. C. Lee, "Nondestructive Measurement of
Loss Performance in Channel Waveguide Devices with Phase Modulator",
Opt. Rev., vol. 3, pp. 192-196 (1996)SCI pµe½s¸¹ :
CS85-0210-D008-007 13.
C. T. Lee, P. L. Fan, J. C. Lee and T. T. Kuo, "A Novel Power Divider
with Arbitrary Power Division and High Coupling Efficiency with Single Mode
Fiber", Opt. Quant. Electron., vol. 28, pp. 1417-1425 (1996)SCI pµe½s¸¹ : NSC85-2215-E008-002 14.
C. T. Lee, H. C. Lee and L. G. Sheu, "The Reduction of Harmonic and
Intermodulation Distortions with a Cascaded Mach-Zehnder Modulator",
Opt. Rev., vol. 3, pp. 341-344 (1996)SCI pµe½s¸¹ :
NSC85-2215-E008-002 15.
C. T. Lee, and L. G. Sheu, "Analysis of Nd:MgO:Ti:LiNbO3 Waveguide Laser
with Nonuniform Concentration Distributions", IEEE J. Lightwave Technol., vol. 14,
pp. 2268-2276 (1996)SCI pµe½s¸¹ :
NSC84-2215-E008-006 16.
M. L. Wu, P. L. Fan, J. M. Hsu and C. T. Lee, "Design of Ideal
Structures for Lossless Bends in Optical Waveguides by Conformal
Mapping", IEEE J. Lightwave Technol., vol. 14, pp. 2604-2614 (1996)SCI pµe½s¸¹ : NSC83-0417-E008-004 17.
C. T. Lee, C. Y. Wang and Y. C. Chou, "Characterization of GaAs Buffer
Layer Function in GaAs/InP Strained Structure Grown by MBE", Thin Solid
Films, vol. 286, pp. 107-110 (1996)SCI pµe½s¸¹ :
NSC82-0115-E008-182 18.
C. T. Lee, H.P. shiao, N.T. Yeh, C.D. Tsai, Y.T. Lyu and Y.K. Tu,
"Thermal Reliability and Characterization of InGaP Schottky Contact with
Ti/Pt/Au Metals", Solid-State Electron., vol. 41, pp.1-5 (1997)SCI pµe½s¸¹ : NSC85-2215-E008-021 19.
J. M. Hsu, M. L. Wu and C. T. Lee, "Hybrid Approach for Quasistatic
Analysis of Shield Strip Lines", Microwave Optic. Technol. Lett., vol.
14, pp. 111-115 (1997)SCI pµe½s¸¹ :
NSC83-0417-E008-006 20.
M. L. Wu, P. L. Fan and C. T. Lee, "Completely Adiabatic S-Shaped Bent
Tapers in Optical Waveguides", IEEE Photon. Technol. Lett., vol. 9, pp.
212-214 (1997) SCI pµe½s¸¹ : NSC84-2215-E008-006 21.
C. T. Lee, M. L. Wu, L. G. sheu, P. L. Fan and J. M. Hsu, "Design and
Analysis of Completely Adiabatic Tapered Waveguides by Conformal
Mapping", IEEE J. Lightwave Technol., vol. 15, pp. 403-410 (1997)SCI pµe½s¸¹ : NSC83-0417-E008-004 22.
C. T. Lee, M. Y. Yeh, C. D. Tsai and Y. T. Lyu, "Low Resistance Bilayer
Nd/Al Ohmic Contacts on n-type GaN", J. Electron. Mater., vol. 26, pp.
262-265 (1997)SCI pµe½s¸¹ : NSC84-2215-E008-029 23.
H. Y. Wang and C. T. Lee, "Novel Immittance Function Simulator Using a
Single Current Conveyor", Electron. Lett., vol.33, pp.574-576 (1997) SCI
pµe½s¸¹ : NSC83-0417-E008-006 24.
C. Y. Wang, Z. M. Chuang, H. H. Liao, Y. K. Tu and C. T. Lee,
"Resistance to External Optical Feedback of Low-Chirp
Strained-Quantum-Well Complex-Coupled Distributed-Feedback Laser", Jpn.
J. Appl. Phys., pt.1, vol. 36, pp. 2685-2688 (1997)
SCI 25. C. D. Tsai, H. P. Shiao, C. T. Lee,
and Y. K. Tu "High Performances and Reliability of Novel GaAs MSM
Photodetectors with InGaP Buffer and Capping Layers", IEEE Photon.
Technol. Lett., vol. 9, pp. 660-662 (1997)SCI pµe½s¸¹ :
NSC85-2215-E008-021 26. P. L. Fan, M. L. Wu and C. T. Lee,
"Analysis of Abrupt Bent Waveguides by the Beam Propagation Method and
the Conformal Mapping Method", IEEE J. Lightware Technol., vol. 15, pp.
1026-1031 (1997)SCI pµe½s¸¹ : NSC84-2215-E008-006 27.
C. T. Lee, and M. L. Wu, "Combination of Conformal Mapping and Finite
Difference Methods for Analysis of Supported Coplanar Waveguides",
Microwave Optic. Technol. Lett., vol. 15, pp. 273-277 (1997)
SCI pµe½s¸¹ : NSC85-2215-E008-021 28.
Y. L. Lai, E. Y. Chang, C. Y. Chang, M. C. Tai, T. H. Liu, S. P. Wang, K. C.
Chung, and C. T. Lee, "High-Efficiency and Low-Distortion
Directly-Ion-Implanted GaAs Power MESFET's for Digital Personal Handy-Phone
Applications", IEEE Electron Device Lett., vol. 18 pp. 429-431 (1997)
SCI pµe½s¸¹ : NSC85-2215-E009-054 29. M. L. Wu and C. T. Lee,
"Quasi-Static Analysis of Arbitrary Coplanar Waveguide Structures by
Combination of Conformal Mapping and Finite Difference Method",
Microwave Optic. Technol. Lett., vol.16, pp.149-154 (1997)SCI pµe½s¸¹ : NSC85-2215-E008-021 30.
C. T. Lee, M. H. Lan and C. D. Tsai, "Improved Performances of InGaP
Schottky Contact with Ti/Pt/Au Metals and MSM Photodetectors by (NH4)2Sx
Treatment", Solid-State Electron., vol. 41, pp. 1715-1719 (1997)
SCI pµe½s¸¹ : NSC86-2215-E008-017 31.
C. T. Lee, and P. L. Fan, "Beam Propagation Analysis of Fast
Mode-Conversion Evaluation Bent Waveguides with Apexes-Linked
Microprisms", IEEE Microw. Guided Wave Lett., vol. 7, pp. 338-340
(1997)SCI pµe½s¸¹ : NSC84-2215-E008-006 32.
C. T. Lee, M. L. Wu, and J. M. Hsu, "Beam Propagation Analysis for
Tapered Waveguides : Taking Account of Curve Phase-Front Effect in Paraxial
Approximation", IEEE J.
Lightwave Technol., vol.15, pp.2183-2189
(1997)SCI pµe½s¸¹ : NSC85-2215-E008-002 33.
J. I. Chyi, T. E. Nee, C. T. Lee, J. L. Shieh and J. W. Pan, "Formation
of Self-Organized In0.5Ga0.5As Quantum Dots on GaAs by Molecular Beam
Epitaxy", J. Crystal Growth, vol. 175, pp. 777-781 (1997)SCI pµe½s¸¹ : NSC85-2215-E008-022 34.
C. T. Lee and L. G. Sheu, "Analysis of End-Pumped Nd:Ti:LiNbO3 Microchip
Waveguide Fabry-Perot Lasers",
IEEE J. Lightwave Technol., vol. 15, pp. 2147-2153 (1997)SCI pµe½s¸¹ : NSC85-2215-E008-002 35.
C. Y. Wang, H. P. Shiao, Z. M. Chuang, H. H. Liao and C. T. Lee, "Wide
Temperature Range Operation of 1.55um Current Blocking Grating
Complex-Coupled DFB Laser", Electron. Lett., vol. 33, pp. 1712-1713
(1997)SCI 36.
C. T. Lee and T. E. Nee, "Electroabsorption of Unstrained
InGaAs/InAlGaAs Multiple Quantum Well Structure Grown on GaAs Substrate",
Int. J. of High Speed Electronics and Systems, vol. 8, pp. 587-598 (1997)EI pµe½s¸¹ : NSC87-2215-E008-021 37.
L. W. Chang, C. T. Lee and P. Y. Chien, "Absolute Displacement
Measurement by Using the Synthesized Modulation Index of a
Frequency-Modulated Interferometer", Rev. Sci. Instrum., vol. 68, pp.
3085-3087 (1997) SCI 38.
C. T. Lee, and J. M. Hsu, "Systematic Design of Full Phase Compensation
Microprism-Type Low-Loss Bent Waveguide", Appl. Opt., vol. 37, pp.
507-509 (1998)SCI pµe½s¸¹ : NSC85-2215-E008-002 39.
L. W. Chang, C. T. Lee and P. Y. Chien, "Optical Interferometric Signal
Generator Based on Electrical-Locked Loop Technique", Rev. Sci. Instrum., vol. 69,
pp.1246-1252 (1998)SCI 40. H. Y. Wang and C. T. Lee,
"Realisation of R-L and C-D Immittance Using Single FTFN",
Electron. Lett., vol. 34, pp. 502-503(1998)SCI 42.
J. M. Hsu and C. T. Lee, "Systematic Design of Novel Wide-Angle Low-Loss
Symmetric Y-Junction Waveguides", IEEE J. Quant. Electron., vol. 34, pp.
673-679 (1998)SCI pµe½s¸¹ : NSC87-2215-E008-011 43.
C. T. Lee, L. W. Chang and P. Y. Chien, "Intermetric Fiber Sensors Based
on Triangular Phase Modulator", J. Chin. Inst. 44.
C. T. Lee, and M. L. Wu, "Microprism for Wide-Angle Low Loss Y-Junction
Waveguide", Fiber Integra. Opt., vol. 17, pp. 213-219 (1998)SCI pµe½s¸¹ : NSC87-2215-E008-011 45.
C. T. Lee and J. M. Hsu, "Systematic Design of Microprism-Type Low-Loss
Step-Index Bent Waveguides", Appl. Opt., vol. 37, pp. 3948-3953
(1998)SCI pµe½s¸¹ : NSC87-2215-E008-011 46.
C. T. Lee, K. L. Jaw and C. D. Tsai, "Thermal Stability of Ti/Pt/Au
Ohmic Contacts on InAs/Graded InGaAs Layers", Solid-State Electron.,
vol. 42, pp. 871-875 (1998)SCI pµe½s¸¹ :
NSC85-2215-E008-021 47.
C. T. Lee and L. G. Sheu, "Analysis of End-Pumped and Electrooptically
Tuned Nd:Ti:MgO:LiNbO3 Microchip Waveguide Lasers", IEEE J. Lightwave
Technol., vol. 16, pp. 1315-1322(1998)SCI pµe½s¸¹ :
NSC87-2215-E008-011 48.
T. E. Nee, N. T. Yeh, J. I. Chyi and C. T. Lee, "Matrix-Dependent
Structural and Photoluminescence Properties of In0.5Ga0.5As Quantum Dots
Grown by Molecular Beam Epitaxy", Solid-State Electron., vol. 42,
pp.1331-1334(1998)SCI pµe½s¸¹ :
NSC86-2215-E008-007 49.
L. W. Chang, C. T. Lee and P. Y. Chien, "Displacement Measurement by
Synthesized Light Source Based on Fiber Bragg Grating", Opt. Commun.,
vol. 154, pp. 261-267 (1998) SCI 50.
H. Y. Wang and C. T. Lee, "Cascadable Current-Mode Filters Using Single
FTFN", Electron. Lett., vol. 34, p.1801 (1998) SCI 51.
H. H. Lu and C. T. Lee, "Directly Modulated CATV Transmission Systems
Using Half-Split-Band and Wave length Division Multiplexing Techniques",
IEEE Photon. Technol. Lett., vol. 10, pp. 1653-1655 (1998) SCI pµe½s¸¹ : NSC87-2215-E008-011 52.
C. T. Lee, C. H. Fu, C. D. Tsai and W. Lin, "Performance
Characterization of InGaP Schottky Contact with ITO Transparent
Electrodes", J. Electron. Mater., vol. 27, pp.1017-1021 (1998) SCI pµe½s¸¹ : NSC86-2215-E008-017 53.
C. T. Lee, C. T. Huang and J. Y. Chen, "Effect of SiOx Buffer Layer on
Propagation Loss in LiNbO3 Channel Waveguides", J. Appl. Phys., vol. 84, pp. 1204-1209
(1998) SCI pµe½s¸¹ : NSC87-2215-E008-011 54.
C. T. Lee, "Nondestructive Measurement of Separated Propagation Loss for
Multimode Waveguides", Appl. Phys. Lett., vol. 73, pp. 133-135
(1998)
SCI pµe½s¸¹ : NSC87-2215-E008-011 55.
C. T. Lee, "Optically Induced Sidegating Current Isolation of GaAs
MESFET by Multiquantum Barrier", IEEE Trans. Electron Devices, vol. 45,
pp. 2083-2085 (1998)SCI pµe½s¸¹ :
NSC85-2215-E008-021 56.
C. T. Lee, L. W. Chang and P. Y. Chien, "Frequency Multiplier Using
Cascade Integrated-Optic Phase Modulators Based on Sagnac
Interferometer", Opt.
Commun., vol. 158, pp. 181-188 (1998)SCI 57.
C. D. Tsai, C. H. Fu, Y. J. Lin and C. T. Lee, "Study of InGaP/GaAs/InGaP
MSM Photodetectors Using Indium-Tin-Oxide as Transparent and Antireflection
Schottky Electrode",
Solid-State Electron., vol. 43, pp. 665-670 (1999)SCI pµe½s¸¹ : NSC88-2218-E008-015 58.
N. T. Yeh, T. E. Nee, P. W. Shiao, M. N. Chang, J. I. Chyi and C. T. Lee,
"Photoluminescence Characteristics of Self-Assembled In0.5Ga0.5As
Quantum Dots on Vicinal GaAs Substrates", Jpn. J. Appl. Phys., vol. 38 pp.
550-553 (1999)SCI pµe½s¸¹ : NSC87-2215-E008-012 59.
T. E. Nee, N. T. Yeh, P. W. Shiao, J. I. Chyi and C. T. Lee,
"Room-Temperature Operation of In0.5Ga0.5As Quantum Dot Lasers Grown on
Misoriented GaAs Substrates by Molecular Beam Epitaxy", Jpn. J. Appl. Phys., vol. 38, pp.
605-607 (1999)SCI pµe½s¸¹ : NSC87-2215-E008-012 60.
L. W. Chang, P. Y. Chien and C. T. Lee, "Measurement of Absolute
Displacement by a Double-Modulation Technique Based on a Michelson
Interferometer", Appl. Opt., vol. 38, pp. 2843-2847(1999) SCI pµe½s¸¹ : NSC88-2215-E008-003 61.
J. M. Hsu and C. T. Lee, "Design of Microprism-type Symmetric Y-Junction
Waveguides Using Full-Phase Compensation Method", Appl. Opt., vol. 38,
pp. 3234-3238(1999)SCI pµe½s¸¹ :
NSC88-2215-E008-003 62.
H. H. Lu and C. T. Lee, "Composite Second Order and Composite Triple
Beat Performance for Cascaded Fiber Optic CATV Transmitters", Fiber
Integra. Opt., vol.18, pp.131-140 (1999)SCI pµe½s¸¹ :
NSC88-2215-E008-003 63.
T. E. Nee, N. T. Yeh, J. M. Lee, J. I. Chyi and C. T. Lee, "High
Characteristic Temperature Be-Doped In0.5Ga0.5As Quantum Dot Lasers Grown on
GaAs Substrates by Molecular Beam Epitaxy", J. Crystal Growth, vol. 201, pp.
905-908 (1999)SCI pµe½s¸¹ : NSC87-2215-E008-012 64.
C. T. Lee, L. G. Sheu and F. T. Hwang, "Analysis and Modeling of
Nd:Ti:LiNbO3 Fabry-Perot Channel Waveguide Lasers", J. Appl. Phys., vol. 86, pp. 1191-1195
(1999) SCI pµe½s¸¹ : NSC88-2215-E008-003 65. H. Y. Wang and C. T. Lee, ¡§Using Nullors for the Realisation of Current-Mode FTFN-Based
Inverse Filters¡¨, Electron. Lett., vol. 35, pp.
1889-1890 (1999)SCI 66.
H. Y. Wang and C. T. Lee, ¡§Systematic
Synthesis of R-L and C-D Immittance Using Single CCIII¡¨, Int. J. Electron.,
vol. 87, pp.293-301 (2000) SCI 67.
Y. T. Lyu, K. L. Jaw, C. T. Lee, C. D. Tsai, Y. J. Lin and Y. T. Cherng,
"Ohmic Performance Comparison for Ti/Ni/Au and Ti/Pt/Au on InAs/Graded
InGaAs/GaAs Layers", Mater. Chem. Phys., vol. 63, pp. 122-126 (2000) SCI
pµe½s¸¹ : NSC88-2218-E008-015 68.
C. T. Lee, C. D. Tsai and H. P. Shiao, "High Performance of Schottky
Barriers for Cu Contacted with InGaP/GaAs Layers", Opt. Mater., vol. 14,
pp. 251-253 (2000) SCI pµe½s¸¹ :
NSC86-2215-E008-017 69.
C. T. Lee, K. C. Shyu, I. J. Lin and H. H. Lin, ¡§GaAs Metal-Semiconductor Field Effect Transistor with InGaP/GaAs
Multiquantum Barrier Buffer Layer¡¨, Mater. Sci. 70. Y. T. Lyu, Y. R. Liu, D. S. Liu and C.
T. Lee, ¡§Contributions of Ion-Induced
Damage Restoration and Removal in GaN Light Emitting Diodes ¡§J. Chin. Inst. Electric. 71.
C. T. Lee, J. H. Huang and C. D. Tsai, "Nonalloyed GaAs
Metal-Semiconductor Field Effect Transistor", Solid-State Electron., vol. 44, pp.
143-146 (2000) SCI pµe½s¸¹ : NSC88-2218-E008-015 72.
C. D. Tsai and C. T. Lee, "Passivation Mechanism Analysis of
Sulfur-Passivated InGaP Surfaces", J. Appl. Phys., vol. 87, pp.
4230-4233 (2000) SCI pµe½s¸¹ :
NSC88-2218-E008-015 73.
M. S. Doong, D. S. Liu and C. T. Lee, "Monolithic Photoreceiver
Constructed with InGaP/GaAs/InGaP MSM Photodetectors and Conventional GaAs
MESFETS", Solid-State Electron., vol. 44. pp. 1235-1238 (2000) SCI pµe½s¸¹ : NSC86-2215-E008-017 74.
C. T. Lee, and H. W. Kao, "Long Term Thermal Stability of Ti/Al/Pt/Au
Ohmic Contacts to n-type GaN", Appl. Phys. Lett., vol. 76, pp. 2364-2366
(2000) SCI pµe½s¸¹ : NSC88-2218-E008-015 75.
H. H. Lu and C. T. Lee, "Novel Measurement Method for Fiber Optical CATV
Echo Rating Baseband Parameter at Subscriber", Opt. Eng., vol. 39, pp.
2677-2680 (2000) SCI pµe½s¸¹ :
NSC88-2215-E008-003 76.
H. S. Tsai, G. J. Jaw, S. H. Chang, C. C. Cheng, C. T. Lee and H. P. Liu, ¡§Laser-Assisted Plasma-Enhanced Chemical Vapor Deposition of
Silicon Nitride Thin Film¡¨, Surf. Coat. Technol.,
vol.132, pp.158-162 (2000)SCI : 77.
Y. J. Lin, C. D. Tsai, Y. T. Lyu and C. T. Lee, ¡§X-ray Photoelectron Spectroscopy Study of (NH4)2Sx-treated
Mg-doped GaN Layers¡¨, Appl. Phys. Lett., vol. 77, pp.
687-689 (2000)SCI pµe½s¸¹ : NSC89-2215-E008-030 78.
Y. J. Lin and C. T. Lee, ¡§Investigation
of Surface Treatments for Nonalloyed Ohmic Contact Formation in Ti/Al
Contacts to N-Type GaN¡¨, Appl. Phys. Lett., vol. 77,
pp. 3986-3988 (2000) SCI pµe½s¸¹ : NSC90-2215-E008-004 79.
C. D. Tsai and C. T. Lee, ¡§Thermal
Reliability and Performances of InGaP Schottky Contact with Cu/Au and
Au/Cu-MSM Photodetectors¡¨, J. Electron. Mater., vol.
30, pp. 59-64 (2001) SCI pµe½s¸¹ : NSC89-2215-E008-030 80.
H. H. Lu, C. T. Lee and C. T. Kuo, "Long-Distance Transmission of
Directly Modulated 1550mn AM-VSB CATV Systems", Fiber Integra. Opt., vol. 20, pp.
279-285 (2001) SCI pµe½s¸¹ : NSC89-2215-E008-008 81.
C. T. Lee, Q. X. Yu, B. T. Tang and H. Y. Lee, ¡§Effects
of Plasma Treatment on the Electrical and Optical Properties of Indium Tin
Oxide Films Fabricated by Reactive Sputtering¡¨, Thin
Solid Films, vol. 386, pp.105-110 (2001) SCI pµe½s¸¹ :
NSC89-2215-E008-030 82.
C. T. Lee, H. W. Kao and F. T. Hwang, ¡§Effect
of Pt Barrier on Thermal Stability of Ti/Al/Pt/Au in Ohmic Contact with
Si-Implanted N-Type GaN Layers¡¨, J. Electron. Mater.,
vol. 30, pp. 861-865 (2001) SCI pµe½s¸¹ : NSC89-2215-E008-030 83.
J. M. Hsu and C. T. Lee, "Performance Tolerance in Microprism-Type Bent
Waveguides", Microw. Opt. Technol. Lett., vol. 29, pp.328-332 (2001)SCI 84.
H. H. Lu, C. T. Lee and N. C. Wang, "Dispersion Compensation in
Externally Modulated Transmission Systems Using Half-Split-Band Technique and
Chirped Fiber Grating", J. Opt. Commun., vol. 22, pp. 110-113
(2001) EI pµe½s¸¹ : NSC89-2215-E008-038 85.
H. H. Lu, C. T. Lee and C. Lin, "A Hybrid DWDM System for CATV and
Multimedia Trunking", J. Opt. Commun., vol. 22, pp.114-118 (2001) EI pµe½s¸¹ :
NSC89-2215-E008-008 86.
H. S. Tsai, H. C. Chiu, S. H. Chang, C. C. Cheng,, C. T. Lee and H. P. Liu,
"CO2 Laser Assisted Plasma-Enhanced Chemical Vapor Deposition of Silicon
Dioxide Thin Film", Jpn. J. Appl. Phys., vol. 40, pp. 3093-3095
(2001)SCI 87.
B. T. Tang, Q. X. Yu, H. Y. Lee and, C. T. Lee, "Ohmic Performance of
ZnO and ITO/ZnO Contacted with N-Type GaN Layer", Mater. Sci. 88.
C. T. Lee, and M.L. Wu, ¡§ 89.
H. Y. Wang and C. T. Lee, "Versatile Insensitive Current-Mode Universal
Biquad Implementation Using Current Conveyors", IEEE Trans. Circuits and
Systems Part II, vol. 48, pp. 409-413 (2001) SCI 90.
H. H. Lu, C. T. Lee and C. J. Wang, "Dispersion Compensation in
Externally Modulated Transmission Systems Using Chirped Fiber Grating as well
as Large Effective Area Fiber", Opt. Eng., vol. 40, pp. 656-657
(2001) SCI 91. Y. J. Lin and C. T.
Lee, ¡§Surface Analysis of
(NH4)2Sx-treated InGaN Using X-ray Photoelectron Spectroscopy¡¨, J. Vac. Sci. Technol. B, vol. 19, pp. 1734-1738 (2001)SCIpµe½s¸¹ : NSC89-2218-E008-033 92. Y. J. Lin, H. Y. Lee,
F. T. Hwang and C. T. Lee,
"Low Resistive Ohmic Contact Formation of Surface Treated N-GaN Alloyed
at Low Temperature", J.
Electron. Mater., vol. 30,
pp. 532-537 (2001)SCI pµe½s¸¹ : NSC89-2218-E008-033 93.
C. T. Lee, Q. X. Yu, B. T. Tang, H. Y. Lee and F. T. Hwang, ¡§Investigation of Indium Tin Oxide/Zinc Oxide Multilayer Ohmic
Contacts to N-Type GaN Isotype Conjunction¡¨, Appl.
Phys. Lett., vol. 78, pp. 3412-3414 (2001) SCI pµe½s¸¹ :
NSC89-2218-E008-033 94. H. H. Lu, H. L. Ma and C. T. Lee, ¡§A
Bi-directional Hybrid DWDM System for CATV and OC-48 Trunhing¡¨, IEEE Photon. Technol. Lett., vol. 13, pp. 902-904 (2001)SCI pµe½s¸¹ : NSC89-2215-E008-008 95. C. T. Lee, and H. Y. Wang, ¡§Minimum
Realization for FTFN-Based SRCO¡¨, Electron. Lett.,
vol. 37, pp. 1207-1208 (2001)SCI 96. H. P. Shiao, H. Y. Lee Y. J. Lin, Y. K. Tu and C. T. Lee, ¡§Growth and Performance Study of Aluminum-Free InGaAs/GaAs/InGaAsP
Pump Lasers¡¨, Jpn. J.
Appl. Phys., vol. 40, pp. 6384-6390 (2001)SCI 97. C. T. Lee, Y. J. Lin and D. S. Liu, ¡§Schottky
Barrier Height and Surface State Density of Ni/Au Contacts to
(NH4)2Sx-treated N-Type GaN¡¨, Appl. Phys. Lett., vol.
79, pp. 2573-2575 (2001)SCI pµe½s¸¹ :
NSC89-2218-E008-033 98. C. S. Lee, Y. J. Lin and C. T. Lee, ¡§Investigation of
Oxidation Mechanism for Ohmic Formation in Ni/Au Contacts to P-Type GaN
Layers¡¨, Appl. Phys. Lett., vol. 79, pp. 3815-3817
(2001)SCI pµe½s¸¹ : NSC-90-2215-E008-040 99. H. H. Lu, H. L. Ma and C. T. Lee, ¡§Bidirectional
Transport of AM-VSB CATV System¡¨, J. Opt. Commun., vol. 23, pp. 22-25 (2002)EI pµe½s¸¹ : NSC-90-2215-E008-012 100. Y. T. Lyu, C. T. Lee, G. J. Horng, C. Ho, C. Y. Lee and C. S. Wu, ¡§Film Thickness Dependence on Electrical and Optical Properties of
PtSi/P-Si(100) Schottky Barrier Detector¡§, Mater.
Chem. Phys., vol. 74, pp. 177-181 (2002)SCI pµe½s¸¹ :
NSC-90-2215-E008-012 101. C. T. Lee, N. C. Wang and H. H. Lu, ¡§Lon-Distance
Transmission of AM-VSB CATV Systems Using Fabry-Perot Laser Diode and Fiber
Bragg Grating¡¨, Fiber Integra. Opt., vol. 21, pp.
43-54 (2002) SCI 102. C. T. Lee, C. T. Kuo and H. H. Lu, ¡§Dispersion
Compensation in Externally Modulated Transmission System Using Chirped Fiber
Grating¡¨, Fiber Integra. Opt., vol. 21, pp. 269-276
(2002)SCI 103. D. S. Liu and C. T. Lee, ¡§Investigation
of the Thermal Degradation Mechanism for Cu/Au Schottky Contacts to the InGaP
Layer¡¨, J. Appl. Phys., vol. 91, pp. 1349-1353
(2002)SCI pµe½s¸¹ : NSC-90-2215-E008-41 104. H. Y. Lee, I. J. Lin, H. M. Shieh and C. T. Lee, ¡§Investigation of double-delta ¡Vdoped
InAlGaP/GaAs/InGaAs field effect transistors¡¨
Solid-State Electron., vol. 46, pp. 1075-1078 (2002)SCI 105. C. Y. Lo, C. L. Hsu, Q. X. Yu, H. Y. Lee and C. T. Lee, ¡§Investigation of Transparent and Conductive Undoped Zn 106. H. H. Lu, C. S. Lee, H. L. Ma and C. T. Lee, ¡§Up-Stream Noise for the Internet Access Over Fiber Optical CATV
Systems¡¨, J. Opt. Commun., vol. 23,pp. 111-114
(2002).EI pµe½s¸¹ : NSC-90-2215-E008-012 107. D. S. Liu and C. T. Lee, ¡§Microstructure
Evolution and Failure Mechanism for Cu/Au Schottky Contacts to InGaP Layer¡¨, J. Appl. Phys., vol. 92, pp.987-991 (2002)SCI pµe½s¸¹ : NSC-90-2215-E008-041 108. H. H. Lu, H. L. Ma, C. S. Lee and C. T. Lee, ¡§A DWDM System for 256-QAM Transmission over 109. C. T. Lee, H. Y. Lee and H. H. Lin, ¡§Novel
GaAs MESFET¡¦s with InGaP/GaAs Multiple Quantum
Barrier Capping and Buffer Layers¡¨, Jpn. J. Appl.
Phys., vol. 41, pp. 5937-5940 (2002).SCI pµe½s¸¹ :
NSC-90-2215-E008-040 110. C. T. Lee, Y. J. Lin and C. H. Lin, ¡§Nonalloyed
Ohmic Mechanism of TiN Interfacial Layer in Ti/Al Contacts to
(NH4)2Sx-treated n-type GaN Layers¡¨, J. Appl. Phys.,
vol. 92, pp. 3825-3829 (2002).SCI pµe½s¸¹ :
NSC-90-2215-E008-040 111. J. K. Sheu, M. L. Lee, L. S. Yeh, C. J. Kao, C. J. Tun, M. G.
Chen, G. C. Chi, S. J. Chang, Y. K. Su and C. T. Lee, ¡§Planar GaN n+-p Photodetectors Formed by Si Implantation into
p-GaN¡¨, Appl. Phys. Lett., vol. 81, pp. 4263-4265
(2002). SCI 112. C. S. Lee, H. Y. Wang and C. T. Lee, ¡§The Adjoint Realization of Multiple Input/Output Fibers¡¨, J. Chin. Inst. Electric. 113. H. Y. Lee and C. T. Lee, ¡§The
Investigation for Various Treatments of InAlGaP Schottky Diodes¡¨, Opt. Mater., vol. 23, pp. 99-102 (2003).SCI 114. H. Y. Lee and C. T. Lee, ¡§Investigation
of Degradation Mechanism of Schottky Diodes¡¨,
Solid-State Electron., vol.47, pp.831-834 (2003).
SCI 115. C. T. Lee, Y. J. Lin and T. H. Lee, ¡§Mechanism
investigation of NiOx in Au/Ni/p-type GaN ohmic contacts annealed in air¡¨, J. Electron. Mater., vol. 32, pp. 341-345 (2003). SCI pµe½s¸¹: NSC 91-2215-E008-016 116. Y. J. Lin, C. S. Lee and C. T. Lee, ¡§Investigation
of Accumulated Carrier Mechanism on Sulfurated GaN Layers¡¨, J. Appl. Phys., vol. 93, pp. 5321-5324 (2003). SCI pµe½s¸¹: NSC 91-2215-E008-016 117. C. T. Lee, H. Y. Lee and H. W. Chen, ¡§GaN MOS Device Using SiO2-Ga2O3 Insulator Grown by
Photoelectrochemical Oxidation Method¡¨, IEEE Electron
Device Lett., vol. 24, pp. 54-56 (2003). SCI pµe½s¸¹:
NSC 91-2215-E008-016 118. Y. J. Lin, Z. D. Li, C. W. Hsu, F. T. Chien, C. T. Lee, S. T. Shao
and H. C. Chang, ¡§Investigation of
Degradation for Ohmic Performance of Oxidized Au/Ni/Mg-doped GaN¡¨, Appl. Phys. Lett., vol. 82, pp. 2817-2819 (2003). SCIpµe½s¸¹:
NSC91-2218-E035-007 119. T. S. Cheng, H. Y. Lee, C. T. Lee, H. Chen and H. T. Lin, ¡§Preparing an Acrylic Ester Copolymer as an Ultrathick Negative
Photo Resist¡¨, Mater. Lett., vol. 57, pp. 4578-4582
(2003).SCI 120. C. T. Lee, H. W. Chen and H. Y. Lee, ¡§Metal-Oxide-Semiconductor Devices Using Ga2O3 Dielectrics on
n-type GaN¡¨, Appl. Phys. Lett., vol. 82, pp.
4304-4306 (2003).SCI pµe½s¸¹:NSC 91-2215-E008-016 121. C. T. Lee and H. Y. Lee, ¡§Metal-Semiconductor-Metal
Photodetectors with InAlGaP Capping and Buffer Layers¡¨, IEEE Electron Device Lett., vol. 24, pp. 532-534 (2003).SCIpµe½s¸¹:NSC. 91-2215-E008-015
122. Q. X. Yu, B. Xu, Q. H. Wu, Y. Liao, G. Z. Wang, R. C. Fang, H. Y.
Lee, and C. T. Lee, ¡§Optical properties of
ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode¡¨, Appl. Phys. Lett., Vol. 83, pp. 4713-4715 (2003).SCI 123. D. S. Liu, C. T. Lee and C. W. Wang, ¡§Properties of Cu/Au Schottky contacts on InGaP layer¡¨, J. Appl. Phys., vol. 94, pp. 3805-3809 (2003).SCI 124.
C. T. Lee, D. S. Liu and R. W. Deng, ¡§
Diffusion Barrier of Sputtered W film for Cu Schottky Contacts on InGaP Layer¡¨, Thin Solid Films, vol. 468, pp. 216-221 (2004).SCI 125. Y. P. Hsu, S. J. Chang, Y. K. Su, J. K. Sheu, C. T. Lee, T. C.
Wen, L. W. Wu, C. H. Kuo, C. S. Chang and S. C. Shei, ¡§Lateral Epitaxial Patterned Sapphire InGaN/GaN MQW LEDs¡¨, J. Crystal Growth, vol. 261, pp. 466-470 (2004).SCI 126. Y. J. Lin, W. F. Liu and C. T. Lee, ¡§Excimer-laser-induced
activation of Mg-doped GaN layers¡¨, Appl. Phys.
Lett., vol. 84, pp. 2515-2517 (2004).SCI pµe½s¸¹:NSC
92-2215-E035-003 127. T.H. Lee, K.H. Tu and C.T. Lee, ¡§Novel
structure of arrayed-waveguide grating multiplexer with flat spectral
response¡¨, Microw. Opt. Technol. Lett. vol. 41, pp.
444-445 (2004).SCI 128. C. S. Chang, S. J. Chang, Y. K. Su, C. T. Lee, Y. C. Lin, W. C.
Lai, S. C. Shei, J. C. Ke, and H. M. Lo, ¡§Nitride-based
LEDs with textured side walls¡¨, IEEE Photon. Technol.
Lett., vol. 16, pp. 750-752 (2004).SCI pµe½s¸¹:NSC
89-2215-E006-095 129. C. T. Lee and C. H. Lin, ¡§Si
nanocrystals embedded in Si suboxide matrix grown by laser-assisted chemical
vapor deposition at room temperature¡¨, Jpn. J. Appl.
Phys., vol. 43, pp. 2793-2794 (2004).SCI pµe½s¸¹:NSC
91-2215-E008-015 130. H. Y. Wang, C. T. Lee, C. Y. Huang, ¡§Novel
CFA-based Negative Immittance Simulator¡¨,
International J. Electrical Engineering, vol. 11, pp.393-398 (2004).EI 131. S. J. Chang, L. W. Wu, Y. K. Su, Y. P. Hsu, W. C. Lai, J. M. Tsai,
J. K. Sheu and C. T. Lee, ¡§Nitride-based
LEDs with 800oC grown P-AlInGaN-GaN double cap layers¡¨, IEEE Photon. Technol. Lett., vol. 16, pp. 1447-1449 (2004).SCIpµe½s¸¹:NSC 89-2215-E006-095 132. T. C. Wen, S. J. Chang, C. T. Lee, W. C. Lai, J. K. Sheu, ¡§Nitride-based LEDs with modulation-doped Al0.12Ga0.88N-GaN superlattice structures¡¨, IEEE Trans. Electron Devices, vol.51, pp. 1743-1746 (2004).SCI 133. Y. K. Su, H. C. Yu, S. J. Chang, C. T. Lee, J. S. Wang, A. R.
Kovsh, Y. T. Wu, K. F. Lin, C. Y. Huang, ¡§ 134. C. T. Lee and H. Y. Lee, ¡§Surface
Passivated Function of GaAs MSM-PDs Using Photoelectrochemical Oxidation
Method¡¨, IEEE Photon. Technol. Lett., vol. 17, pp.
462-464 (2005).SCIpµe½s¸¹:NSC 92-2215-E008-008 135. C. T. Lee, H. W. Chen, F. T. Hwang, and H. Y. Lee, ¡§Investigation of Ga Oxide films grown on n-type GaN by
photoelectrochemical oxidation using He-Cd laser¡¨, J.
Electron. Mater., vol. 34, pp.282-286 (2005).SCI pµe½s¸¹:NSC
91-2215-E008-016 136. Y. K. Su, P. C. Chang, C. H. Chen, S. J. Chang, C. L. Yu, C. T. Lee, H. Y. Lee, J. Gong, P.C. Chen, C. H. Wang, ¡§Nitride-based MSM UV photodetectors with photo-chemical annealing Schottky contacts¡¨, Solid-State Electron., vol. 49, pp. 459-463 (2005)SCI 137. S. C. Chung, Y. C. Lin, W. T. Lin, J. R. Gong, C. T. Lee, ¡§Effects of Oxided Cu and Co Layers on the Formation of Au Ohmic
Contacts to p-GaN¡¨, J. Electrochem. Soc., vol. 152,
pp. G367-G371 (2005).SCI pµe½s¸¹:NSC
92-2216-E-006-018 138. C. T. Lee, C. H. Lin, T. H. Lee and T. C. Tsai, ¡§Photoluminessence Degrdation and Passivation Mechanism of Si
Nanoclusters in Silicon Oxide Matrix¡¨, Jpn. J. Appl.
Phys., vol. 44, pp. 4240-4244 (2005).SCI pµe½s¸¹:NSC
92-2215-E008-008 139. H. Y. Wang, C. T. Lee, and C. Y Huang, ¡§Characteristic Investigation of New Pathological Elements¡¨, Analog Integr. Circ. Signal Process., vol. 44, pp. 95-102
(2005).SCI 140. S. J. Chang, C. S. Chang, Y. K. Su, C. T. Lee, W. S. Chen, C. F. Shen, Y. P. Hsu, S. C. Shei, and H. M. Lo, ¡§Nitride-Based Flip-Chip ITO LED¡¨, IEEE Trans. Adv. Packaging, vol. 28, pp. 273-277 (2005).SCI pµe½s¸¹:NSC 90-2215-E008-043 141. D. S. Liu, C. C. Wu and C. T. Lee, ¡§A
Transparent and Conductive Film Prepared by RF Magnetron Cosputtering System
at Room Temperature¡¨, Jpn. J. Appl. Phys., vol. 44,
pp. 5119-5121 (2005).SCI pµe½s¸¹: NSC93-2215-E150-006 142. S. W. Chang, E. Y. Chang, C. S. Lee, K. S. Chen, C. W. Tseng, Y. Y. Tu, C, T. Lee, ¡§A gold-free fully copper-metallized InP heterojunction bipolar transistor using non-alloyed ohmic contact and platinum diffusion barrier¡¨, Jpn. J. Appl. Phys., vol. 44, pp. L899-L900 (2005).SCI 143. D. S. Liu, Y. K. Liao, C. Y. Wu, F. S. Juang, C. T. Lee, ¡§A silicon oxide hard coating deposited on flexible
substrate by TMS-PECVD system¡¨, Mater.
Sci. Forum, vol. 505-507, pp. 439-444 (2006).SCI pµe½s¸¹:NSC
93-2622-E150-036-CC3 144. Y. J. Lin, W. X. Lin, C. T. Lee, F. T. Chien, ¡§Changes in optical and electrical properties and surface
recombination velocity of n-type GaN due to (NH4)2Sx treatment¡¨, Solid State Comm., vol. 137, pp. 257-259 (2006).SCI pµe½s¸¹:NSC 94-2112-M018-007 145. Y. C. Hsieh, E. Y. Chang, S. S. Yeh, C. W. Chang, G. L. Luo, C. Y.
Chang, C. T. Lee, ¡§Optimization of the growth
of the InGaP etch-stop layer by MOVPE for InGaP/GaAs HBT device application¡§, J. Crystal Growth, vol. 289, pp. 96-101 (2006).SCI 146. Y. J. Lin, W. X. Lin, C. T. Lee, and H. C. Chang, ¡§Electronic Transport and Schottky Barrier Heights of Ni/Au
Contacts on n-Type GaN Surface with and without a Thin Native Oxide layer¡¨, Jpn. J. Appl. Phys., vol. 45, pp. 2505-2508 (2006). SCI pµe½s¸¹:NSC 94-2112-M018-007 147. Y. J. Lin, C. T. Lee and H. C. Chang, ¡§Changes in activation energies of donors and carrier concentration
in Si-doped n-type GaN due to (NH4)2Sx treatment¡¨,
Semicon. Sci. Technol., vol. 21, pp. 1167-1171 (2006).SCI pµe½s¸¹:NSC 95-2112-M-018-002 148. C. S. Lee, Y. C. Lien, E. Y. Chang, H. C. Chang, S. H. Chen, C. T. Lee, L. H. Chu, S. W. Chang, Y. C. Hsieh, ¡§Copper-airbridged low-noise GaAs PHEMT with Ti/WNx/Ti diffusion barrier for high-frequency applications¡¨, IEEE Trans. Electron Devices, vol. 53, pp. 1753-1758 (2006).SCI 149. T. H. Lee, F. T. Hwang, W. T. Shay, C. T. Lee, ¡§Electromagnetic field sensor using Mach-Zehnder waveguide modulator¡¨, Micro. Opt. Technol. Lett., vol. 48, pp. 1897-1899 (2006).SCI pµe½s¸¹:NSC 94-2215-E-006-009 150. P. S. Chen, C. T. Lee, ¡§Investigation
of Ohmic mechanism for chlorine-treated p-type GaN using x-ray photoelectron
spectroscopy¡¨, J. Appl. Phys., vol. 100, 044510
(2006).SCI pµe½s¸¹: NSC
94-2215-E006-013 151. C. T. Lee, U. Z. Yang, C. S. Lee, P. S. Chen, ¡§White Light Emission of Monolithic Carbon-Implanted InGaN¡VGaN Light-Emitting Diodes¡¨, IEEE Photon.
Technol. Lett., vol. 18, pp. 2029- 2031 (2006).SCI pµe½s¸¹: NSC 94-2215-E006-013 152. C. Y. Lu, S. J. Chang, S. P. Chang, C. T Lee, C. F. Kuo, H. M.
Chang, Y. Z. Chiou, C. L. Hsu, and I C. Chen, ¡§Ultraviolet
photodetectors with ZnO nanowires prepared on ZnO:Ga/glass templates¡¨, Appl. Phys. Lett.,
vol. 89, 153101 (2006).SCI 153. C. L. Yu, S. J. Chang, P. C. Chang, Y. C. Lin, C. T. Lee, ¡§Nitride-based ultraviolet Schottky barrier photodetectors with LT-AlN cap layers¡¨, Superlattices and Microstructures, vol. 40, pp. 470-475 (2006).SCI pµe½s¸¹: NSC 93-2215-E006-030 and NSC 93-2215-E006-010 154. D. S. Liu, C. C. Wu, and C. T. Lee, ¡§A transparent electrode prepared by co-sputtering system¡¨, International J. Microwave and Optic. Technol., vol. 1, pp. 502-505 (2006).EI pµe½s¸¹: NSC93-2215-E-150-006 155. C. F. Shen, S. J. Chang, T. K. Ko, C. T. Kuo, S. C. Shei, W. S. Chen, C. T. Lee, C. S. Chang, and Y. Z. Chiou, ¡§Nitride-Based Light Emitting Diodes With Textured Sidewalls and Pillar Waveguides¡¨, IEEE Photon. Technol. Lett., vol. 23, pp. 2517-2519 (2006).SCI 156. T. H. Lee, F. T. Hwang, C. T. Lee, and H. Y. Lee, ¡§Investigation of LiNbO3 thin films grown on Si substrate using
magnetron sputter¡§, Mater. Sci. 157. P. S Chen, T. H. Lee, L. W. Lai and C. T. Lee, ¡§Schottky mechanism for Ni/Au contact with chlorine-treated n-type GaN layer¡¨, J. Appl. Phys., vol. 101, 024507 (2007)SCI pµe½s¸¹: NSC 94-2215-E006-013 158. Y. C. Lien, S. H. Chen, E. Y. Chang, C. T. Lee, L. H. Chu, and C. Y. Chang, ¡§Fabrication of 0.15-£gm £F-Shaped Gate In0.52Al0.48As/In0.6Ga0.4As Metamorphic HEMTs Using DUV Lithography and Tilt Dry-Etching Technique¡¨, IEEE Electron Device Lett., vol. 28, pp. 93-95 (2007).SCI pµe½s¸¹: NSC 95-2752-E-009-001-PAE and 94-EC-17-A-05-S1-020 159. P. S.
Chen, C. S. Lee, J. T. Yan, and C. T. Lee, ¡§Performance
Improvement and Mechanism of Chlorine-Treated InGaN¡VGaN
Light-Emitting Diodes¡¨, Electrochem. 160. P. F. Lin, C. Y. Ko, W. T. Lin, and C. T. Lee, ¡§Effects of processing parameters on ultraviolet emission of In-doped ZnO nanodisks grown by carbothermal reduction¡¨, Mater. Lett., vol. 61, pp. 1767-1770 (2007).SCI pµe½s¸¹: NSC94-2216-E-006-025 161. T. C. Tsai, L. Z. Yu, and C. T. Lee, ¡§Electroluminescence emission of crystalline silicon nanoclusters grown at a low temperature¡¨, Nanotechnol., vol. 18, 275707 (2007) SCI 162. H. Y. Lee, K. H. Pan, C. C. Lin, Y. C. Chang, F. J. Kao, and C. T. Lee, ¡§Current spreading of III-Nitride light-emitting diodes using plasma treatment¡¨, J. Vac. Sci. Technol. B, vol. 25, pp. 1280-1283 (2007).SCI pµe½s¸¹: NSC94-2215-E-006-011 163. L. H. Huang and C. T. Lee, ¡§Investigation and Analysis of AlGaN MOS Devices with an Oxidized Layer Grown Using the Photoelectrochemical Oxidation Method¡¨, J. Electrochem. Soci., vol. 154, pp. H862-H866 (2007)SCI 164. D. S. Liu, C. S. Sheu, and C. T. Lee, ¡§Aliminum-nitride codoped zinc oxide films prepared using a radio-frequency magnetron cosputtering system¡¨, J. Appl. Phys., vol. 102, 033516 (2007)SCI pµe½s¸¹: NSC94-2218-E-150-004 165. C. T. Lee, J. H. Cheng, and H. Y. Lee, ¡§Crystalline SiGe films grown on Si substrates usinglaser-assisted plasma-enhanced chemical vapor deposition at low temperature¡¨, Appl. Phys. Lett., vol. 91, 091920 (2007).SCI 166. T. H. Lee, P. I Wu, and C. T. Lee, ¡§Intergraded LiNbO3 Electrooptical Electromagnetic Field Sensor¡¨, Microwave Opt. Technol. Lett., vol. 49, pp. 2312-2314 (2007)SCI pµe½s¸¹: NSC95-2221-E-060-312 167. Y. Zhang, D. J. Chen, and C. T. Lee, ¡§Free exciton emission and dephasing in individual ZnO nanowires¡¨, Appl. Phys. Lett., vol. 91, 161911 (2007).SCI 168. Y. C. Chang, F. Y. Chou, P. H. Yeh, H. W. Chen,
S. H. Chang, Y. C. Lan, T. F. Guo, T. C. Tsai and C. T. Lee, ¡§Effects of surface Plasmon responant scattering on the power
conversion efficiency of organic thin-film solar cells¡¨, J. Vac. Sci. Technol. B, vol. 25, pp. 1899-1902, (2007).SCI pµe½s¸¹: NSC
96-ET- 169. R. W. Chuang, R. X. Wu, L. W. Lai, and C. T. Lee, ¡§ZnO-on-GaN heterojunction light-emitting diode grown by vapor
cooling condensation technique¡¨, Appl. Phys. Lett.,
vol. 91, 231113 (2007).SCI 170. K. S. Chen, E. Y. Chang, C. C. Lin, S. S. Lee,
W. C. Huang and C. T. Lee, ¡§A Cu-based
alloyed Ohmic contact system on n-type GaAs¡§, Appl.
Phys. Lett., vol. 91, 233511 (2007).SCI pµe½s¸¹: NSC
95-2752-E009-001-PAE 171. K. L. Lin, E. Y. Chang, Y. L. Hsiao, W. C. Huang, T. Li, D. Tweet,
J. S. Maa, S. T. Hsu, and C. T. Lee, ¡§Growth
of GaN film on 150nm Si (111) using multilayer AlN/AlGaN buffer by
metal-organic vapor phase epitaxy method¡§, Appl.
Phys. Lett., vol. 91, 222111 (2007).SCI pµe½s¸¹: NSC
95-2752-E009-001-PAE 172. L. W. Lai, H. Y. Lee, J. H. Cheng and C. T. Lee, ¡§Investigation of
laser-assisted microcrystalline SiGe films deposited at low
temperature¡§, J. Electronic Mater., vol. 37, pp.
167-171 (2008).SCI 173. L. H. Chu, E. Y. Chang, Y. H. Wu, J. C. Huang, Q. Y. Chen, W. K. Chu, H. W. Seo, and C. T. Lee, ¡§Interfacial reactions of Pt-based Schottky contacts on InGaP¡¨, Appl. Phys. Lett., vol. 92, 082108 (2008). SCI pµe½s¸¹: NSC 95-2752-E-009-001-PAE and 95-EC-17-A-05-S1-020 174. D. S. Liu, C. S. Sheu, C. T. Lee, C. H. Lin, ¡§Thermal stability of indium tin oxide thin films co-sputtered with zinc oxide¡¨, Thin Solid Films, vol. 516, pp. 3196-3203 (2008)SCI pµe½s¸¹: NSC94-2218-E150-004 175. L. H. Huang, S. H. Yeh, C. T. Lee, H. Tang, J. Bardwell and J. B. Webb, ¡§AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors using oxide insulator grown by photoelectrochemical oxidation method¡¨, IEEE Electron Devices Lett., vol. 29, pp. 284-286 (2008)SCI 176. Y. J. Lin, C. T. Lee, S. S. Chang and H. C. Chang, ¡§Electronic transport and Schottky barrier height of Ni contact on p-type GaN¡¨, J. Phys. D: Appl. Phys., vol. 41, 095107 (2008)SCI pµe½s¸¹: NSC96-2112-M-018-001 177. C. I Kuo, H. T. Hsu, Edward Y. Chang, C. Y. Chang, Y. Miyamoto, S. Datta, M. Radosavljevic, G. W. Huang, and C. T. Lee, ¡§RF and logic performance improvement of In0.7Ga0.3As/InAs/In0.7Ga0.3As composite-channel HEMT using gate-sinking technology¡¨, IEEE Electron Device Lett., vol. 29, pp. 290-293 (2008).SCI pµe½s¸¹: NSC 96-2752-E-009-001-PAE 178. D. S. Liu, F. C. Tsai, C. T. Lee, and C. W. Sheu, ¡§Properties of zinc oxide films cosputtered with aluminum at room
temperature¡¨, Jpn. J. Appl. Phys., vol. 47, pp.
3056-3062 (2008). SCI pµe½s¸¹: NSC94-2218-E150-004 179. L. W. Lai and C. T. Lee, ¡§Investigation
of optical and electrical properties of ZnO thin films¡¨, Mater. Chemi. and Phys., vol. 110, pp. 393-396 (2008).SCIpµe½s¸¹: NSC95-2221-E006-315 180. C. T. Lee, C. C. Lin, H. Y. Lee, and P. S. Chen, ¡§Changes in surface state density due to chlorine treatment in GaN Schottky ultraviolet photodetectors¡¨, J. Appl. Phys., vol. 103, 094504 (2008).SCI 181. C. H. Wen, S. Y. Chu, Y. Y. Shin, C. T. Lee, Y. D. Juang, ¡§Red, green and blue photoluminescence of erbium doped potassium tantalate niobate polycrystalline¡¨, J. Alloy Comp., Vol. 459, pp. 107-112 (2008).SCIpµe½s¸¹: NSC 93-2216-E-006-035 182. Y. J. Lin, P. H. Wu, C. L. Tsai, C. J. Liu, Z. R. Lin, H. C. Chang C. T. Lee, H. C. Chang, Z. R. Lin, and K. Y. Jeng, ¡§Mechanisms of enhancing band-edge luminescence of Zn1-xMgxO prepared by the sol-gel method¡¨, J. Phys. D: Appl. Phys., vol. 41, 125103 (2008).SCIpµe½s¸¹: NSC 96-2112-M-018-001 183. Y. J. Lin, P. H. Wu, C. L. Tsai, C. J. Liu, Z. R. Lin, H. C. Chang, and C. T. Lee, ¡§Effects of Mg incorporation on the optical properties of ZnO prepared by the sol-gel method¡¨, J. Appl. Phys., Vol. 103, 113709 (2008).SCIpµe½s¸¹: NSC96-2112-M-018-001 184. C. Y. Lu, E. Y. Chang, J. C. Huang, C. T. Chang, M. H. Lin , C. T. Lee, ¡§Enhancement of the Schottky barrier height using a nitrogen-rich tungsten nitride thin film for the Schottky contacts on AlGaN/GaN heterostructures¡¨, J. Electronic Mater., vol. 37, pp. 624-627 (2008)SCI 185. K. C. Sahoo, C. W. Chang , Y. Y. Wong , T. L. Hsieh , E. Y. Chang , and C. T. Lee, ¡§Novel Cu/Cr/Ge/Pd ohmic contacts on highly doped n-GaAs¡¨, J. Electronic Mater., vol. 37, pp. 901-904 (2008)SCIpµe½s¸¹: NSC96-2752-E-009-001-PAE 186. L. H. Huang, S. H. Yeh, C. T. Lee, ¡§High frequency and low frequency noise of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with gate insulator grown using photoelectrochemical oxidation method ¡§Appl. Phys. Lett., vol. 93, 043511 (2008). SCIpµe½s¸¹: NSC96-2221-E-006-282-MY3. 187. Y. J. Lin, F. T. Chien, C. T. Lee, C. S. Lin and Y. C. Liu, ¡§Nonalloyed ohmic contact formation in Ti/Al contacts to n-type AlGaN¡¨, J. Phys. D: Appl. Phys., vol. 41 175105 (2008)SCIpµe½s¸¹: NSC 96-2112-M-018-001 188. L. W. Lai, C, H, Liu, C. T. Lee, L. R. Lou, W. Y. Yeh and M. T. Chu, ¡§Investigation of silicon nanoclusters embedded in ZnO matrices deposited by cosputtering system¡¨, J. Mater. Res., vol. 23, pp. 2506-2511 (2008)SCI 189. H. Y. Lee, X. Y. Huang, and C. T. Lee, ¡§Light output enhancement of GaN-based roughened LEDs using bias-assisted photoelectrochemical etching method¡¨, J. Electrochem. Soci., vol. 155, pp. H707-H709 (2008)SCIpµe½s¸¹: NSC-96-2221-E-006-282-MY3 190. C. T. Lee and L. H. Huang, ¡§Investigation and fabrication of AlGaN/GaN MOS-HEMTs with gate insulators grown by photoelectrochemical oxidation method¡¨, Compound Semiconductors and Nitrides and Wide-bandgap Semiconductors for Sensors, Photonics and Electronics, vol. 16, no. 7, pp. 103-109 (2008)EIpµe½s¸¹: NSC96-2221-E-006-282-MY3. 191. T. H. Lee, W. T. Shay, and C. T. Lee, ¡§Integrated electrooptical electromagnetic field sensor with Mach-Zehnder waveguide modulator and annular antenna¡¨, Microwave Opt. Technol. Lett., vol. 50, pp. 3125-3128 (2008)SCIpµe½s¸¹: NSC96-2221-E-006-097-MY3 192. H. Y. Lee, T. H. Lee, W. T Shay, C. T. Lee, ¡§Reflective type segmented electrooptical electric field sensor¡¨, Sens. Actuator A-Phys., vol. 148, pp. 355-358 (2008). SCIpµe½s¸¹: NSC96-2221-E-006-097-MY3 193. L. W. Lai, J. T. Chen, L. R. Lou, C. H. Wu and C.
T. Lee, ¡§ Performance Improvement of (NH4)2Sx-Treated
III-V Compounds Multijunction Solar Cell Using Surface Treatment¡¨, J. Electrochem. Soci, vol.155, pp. B1270-B1273 (2008) SCIpµe½s¸¹: NSC96- 194. C. T. Lee, Y. F. Chen and C. H. Lin, ¡§Phase-separated Si nanoclusters form Si oxide matrix grown by laser-assisted chemical vapor deposition¡¨, Nanotechnol., vol. 20, 025702 (2009).SCI 195. L. Z. Yu, X. Y. Jiang, X. L. Zhang, L. R. Lou, and C. T. Lee, ¡§Investigation of Főrster-type energy transfer in organic light-emitting devices with 4-(dicyanomethylene)-2-t-butyl-6-(1, 1, 7, 7-tetramethy ljulolidin-4-yl-vinyl)-4H-pyran doped cohost emitting layer¡¨, J. Appl. Phys., vol. 105, 013105 (2009). SCI 196. L. H. Huang, K. C. Kan, and C. T. Lee, ¡¨Analysis of Oxidized p-GaN Films Directly Grown Using Bias-Assisted Photoelectrochemical Method¡¨, J. Electronic Mater., vol. 38, pp. 529-532 (2009)SCIpµe½s¸¹: NSC-96-2221-E-006-282-MY3 197. C. T. Chang, S. K. Hsiao, E. Y. Chang, C. Y. Lu, J. C. Huang, and C. T. Lee, ¡§Changes of electrical characteristics for AlGaN/GaN HEMTs under uniaxial tensile strain¡¨, IEEE Electron Devices Lett., vol. 30, pp.213-215 (2009). SCIpµe½s¸¹: NSC 97-2221-E009-156-MY2 and 97-EC-17-A-05-S1-020 198. Y. Zhang and C. T. Lee, ¡§Site-controlled Growth and Field Emission Properties of ZnO Nanorod Arrays¡¨, J. Phys. Chem. C, vol. 113, pp 5920-5923 (2009)SCI 199. Y. Y. Wong, E. Y. Chang, T. H. Yang, J. R. Chang, Y. C. Chen. J. T. Ku, C. T. Lee, C. W. Chang, ¡§The effect of AlN buffer growth parameters on the defect structure of GaN grown on sapphire by plasma-assisted molecular beam epitaxy¡¨, J. Crystal Growth, vol. 311, pp. 1487-1492 (2009).SCI pµe½s¸¹: NSC 95-EC-17-A-05-S1-020, NSC95-2752- E-009-001-PAE and NSC96-2221-E-009-236 200. C. T. Lee, Y. H. Chou, J. T. Yan, and H. Y. Lee, ¡§Light enhancement of Al nanoclusters embedded in Al-doped ZnO films of GaN-based light-emitting diodes¡¨, J. Vac. Sci. Technol. B, vol. 27, pp. 1901-1903 (2009).SCI 201. L. W.
Lai, J. T. Yan, C. H. Chen, L. R. Lou and C. T. Lee, ¡§ Nitrogen function of aluminum-nitride codoped ZnO films deposited
using cosputter system¡¨, J. Mater. Res., vol. 24, No.
7, pp. 2252-2258 (2009).SCIpµe½s¸¹: NSC97- 202. Y. J. Lin, B. C. Huang, Y. C. Lien, C. T. Lee, C. L. Tsai and H. C. Chang, ¡§Capacitance¡Vvoltage and current¡Vvoltage characteristics of Au Schottky contact on n-type Si with a conducting polymer¡¨, J. Phys. D: Appl. Phys., vol. 42, 165104 (2009).SCIpµe½s¸¹: 97-2628-M-018-001-MY3 203. T. H. Lee, W. T. Shay and C. T. Lee, ¡§Electromagnetic source azimuth measurement using electrooptical electromagnetic field probe¡¨, IEEE Photon. Technol. Lett., vol. 21, pp.1163-1165 (2009).SCIpµe½s¸¹: 96-2221-E-006-097-MY3 204. S. C. Tsai, C. H. Cheng, N. Wang, Y. L. Song, C. T. Lee, and C. S. Tsai, ¡§Silicon-based megahertz ultrasonic nozzles for production of monodisperse micrometer-sized droplets¡¨, IEEE Trans. Ultrason. Ferroelectr. Freq. Control, vol. 56, pp. 1968-1979 (2009).SCI 205. L. Z. Yu and C. T. Lee, ¡§Investigation of three-terminal organic-based devices with memory effect and negative differential resistance¡¨, Appl. Phys. Lett., vol. 95, 103305 (2009).SCI 206. C. T. Chang, S. K. Hsiao, E. Y. Chang, Y. L. Hsiao, J. C. Huang, C. Y. Lu, H. C. Chang, K. W. Cheng, and C. T. Lee, ¡§460-nm InGaN-based LEDs grown on fully inclined hemisphere-shape-patterned sapphire substrate with submicrometer spacing¡¨, IEEE Photon. Technol. Lett., vol. 21, pp.1366-1368 (2009).SCIpµe½s¸¹: NSC98-2923-E-009-002-MY3 207. J. T. Yan, and C. T. Lee, ¡§Improved detection sensitivity of Pt/b-Ga2O3/GaN hydrogen sensor diode¡¨, Sens. Actuators B, vol. 143, pp. 192-197 (2009).SCI 208. C. Y. Lu, E. Y. Chang, J. C. Huang, C. T. Chang and C. T. Lee, ¡§Stable AlGaN/GaN high electron mobility transistors with tungsten nitride gate metallization¡¨, Electron. Lett., vol. 45, 1348-U104 (2009).SCIpµe½s¸¹:97-2221-E-009-156-MY2 and 97-EC-17-A-05-S1-020 209. H. Y. Lee, Y. H. Chou, C. T. Lee, W. Y. Yeh, and M. T. Chu, ¡§Mechanisms of lighting enhancement of Al nanoclusters-embedded Al-doped ZnO film in GaN-based light-emitting diodes¡¨, J. Appl. Phys., vol. 107, 014503 (2010).SCI 210. C. T. Lee, Y. H. Lin, L. W. Lai, and L. R. Lou, ¡§Mechanism investigation of p-i-n ZnO-based light-emitting diodes¡¨, IEEE Photon. Technol. Lett., vol. 22, pp.30-32 (2010).SCIpµe½s¸¹: NSC-98-NU-E-006-018 211. J. T. Yan, C. H. Chen, S. F. Yen, and C. T. Lee, ¡§Ultraviolet ZnO Nanorod/P-GaN-Heterostructured Light-Emitting Diodes¡¨, IEEE Photon. Technol. Lett., vol. 22, pp.146-148 (2010).SCI 212. C. T. Lee, L. Z. Yu, and H. Y. Liu, ¡§Optical performance improvement mechanism of multimode-emitted white resonant cavity organic light-emitting diodes¡¨, IEEE Photon. Technol. Lett. vol. 22, pp. 272-274 (2010).SCI 213. Y. L. Chiou, L. H. Huang, and C. T. Lee, ¡§Photoelectrochemical Function in Gate-Recessed AlGaN/GaN Metal¡VOxide¡VSemiconductor High-Electron-Mobility Transistors¡¨, IEEE Electron Device Lett., vol. 31, pp. 183-185 (2010)SCIpµe½s¸¹: NSC-096-2221-E-006-282-MY3 214. Y. J. Lin, J. A. Chu, Y. C. Su, C. T. Lee, H. C. Chang, ¡§Improved ohmic contacts on pentacene based on Au with ultraviolet irradiation treatment¡¨, Thin Solid Films, vol. 518, pp. 2707-2709 (2010). SCIpµe½s¸¹: NSC 97-2628-M-018-001-MY3 215. L. H. Hsu, W. C. Wu, E. Y. Chang, H. Zirath, Y. C. Wu, C. T. Wang, and C. T. Lee, ¡§Design and Fabrication of 0/1-Level RF-Via Interconnect for RF-MEMS Packaging Applications¡¨, IEEE Trans. Adv. Packag., vol. 30, pp. 30-36 (2010). SCIpµe½s¸¹: NSC 96-2752-E-009-001-PAE 216. Y. L. Chiou, L. H. Huang and C. T. Lee, ¡§GaN-based p-type metal-oxide¡Vsemiconductor devices with a gate oxide layer grown by a bias-assisted photoelectrochemical oxidation method¡¨, Semicond. Sci. Technol., vol. 25, 045020 (2010).SCIpµe½s¸¹:NSC-96-2221-E-006-282-MY3 217. C. T. Lee, ¡§Fabrication Methods and Luminescent Properties of ZnO Materials for Light-Emitting Diodes¡¨, Mater., vol. 3, pp. 2218-2259 (2010). (Review paper)SCI 218. S. Dalui, C. C. Lin, H. Y. Lee, S. F. Yen, Y. J. Lee, and C. T. Lee, ¡§Electroluminescence from Solution Grown n-ZnO Nanorod/p-GaN-Heterostructured Light Emitting Diodes¡¨, J. Electrochemi. Sci., vol. 157, pp. H516-H518 (2010).SCI 219. Y. C. Wu, Y. C. Lin, E. Y. Chang, C. T. Lee, C.
C. Kei, C. T. Chang, and H. T. Hsu, ¡§ An Al2O3
AlGaAs/InGaAs Metal-Oxide-Semiconductor PHEMT SPDT Switch with Low Control
Currents for Wireless Communication Applications¡¨,
Electrochem. 220. C. T. Lee, J. T. Yan, ¡§Sensing Mechanisms of Pt/b-Ga2O3/GaN Hydrogen Sensor Diodes¡¨, Sens. Actuators B, vol. 147 pp. 723¡V729, (2010).SCIpµe½s¸¹: NSC96-2221-E-006-282-MY3 221. C. T. Lee, L. H. Huang, and Y. L. Chiou, ¡§Flicker Noises of AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors¡¨, J. Electrochemi. Sci., vol. 157, pp. H734-H738, (2010).SCIpµe½s¸¹: NSC-96-2221-E-006-282-MY3 222. C. Y. Tseng, C. S. Lee, H. Y. Shin, and C. T.. Lee, ¡§Investigation of Surface Passivation on GaAs-Based Compound Solar Cell Using Photoelectrochemical Oxidation Method¡¨, J. Electrochemi. Sci., vol. 157, pp. H779-H782, (2010).SCIpµe½s¸¹: NSC-98-2120-M-006-003 and NSC-98-3114-E-006-004-CC2 223. C. C. Lin and C. T. Lee, ¡§Enhanced Light Extraction of GaN-Based Light Emitting Diodes Using
Nanorod Arrays¡¨, Electrochem. 224. L. Z. Yu, H. C. Chen and C. T. Lee, ¡§Memory mechanisms of vertical organic memory transistors¡¨, Appl. Phys. Lett., vol. 96, 233301 (2010).SCI 225. C. T. Lee and J. T. Yan, ¡§Investigation of a Metal¡VInsulator¡VSemiconductor Pt/Mixed Al2O3 and Ga2O3 Insulator/AlGaN Hydrogen Sensor¡¨, J. Electrochemi. Sci., vol. 157, pp. J281-J284, (2010).SCIpµe½s¸¹: NSC-96-2221-E-006-282-MY3. 226. C. L. Tsai, M. S. Wang, Y. H. Chen, H. C. Chang, C. J. Liu, C. T. Lee, Y. T. Shih, H. J. Huang, and Y. J. Lin, ¡§Effects of Li content on the structural, optical, and electrical properties of LiZnMgO films¡¨, J. Appl. Phys. vol. 107, p .113717, (2010) SCIpµe½s¸¹: NSC-97-2628-M-018-001-MY3 227. Y. L. Chiou, C. S. Lee, and C. T. Lee, ¡§AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with ZnO gate layer and (NH4)2Sx surface treatment¡¨, Appl. Phys. Lett., vol. 97, 032107, (2010)SCI 228. C. T. Lee, L. Z. Yu, and H. C. Chen, ¡§Memory bistable mechanisms of organic memory devices¡¨, Appl. Phys. Lett., vol. 97, 043301, (2010)SCI 229. C. C. Lin and C. T. Lee, ¡§Enhanced Light Extraction Mechanism of GaN-Based Light-Emitting Diodes Using Top Surface and Side-Wall Nanorod Arrays¡¨, IEEE Photon. Technol. Lett., vol. 22, pp. 1132-1134, (2010).SCI 230. C. T. Lee, T. S. Lin, and H. Y. Lee, ¡§Mechanisms of Low Noise and High Detectivity of p-GaN/i-ZnO/n-ZnO:Al-Heterostructured Ultraviolet Photodetectors¡¨, IEEE Photon. Technol. Lett., vol. 22, pp. 1117-1119, (2010) SCI 231. S. Dalui, C. C. Lin, H. Y. Lee, C. H. Chao and C. T. Lee, ¡§Light Output Enhancement of GaN-Based Light-Emitting Diodes Using ZnO Nanorod Arrays Produced by Aqueous Solution Growth Technique¡¨, IEEE Photon. Technol. Lett., vol. 22, pp. 1220-1222, (2010). SCI 232. C. C. Lin and C. T. Lee, ¡§GaN-Based Resonant-Cavity Light-Emitting Diodes with Top and Bottom Dielectric Distributed Bragg Reflectors¡¨, IEEE Photon. Technol. Lett., vol. 22, pp. 1291-1293, (2010). SCI 233.
Y. Zhang and C. T. Lee, ¡§Negative Differential Resistance in ZnO Nanowires Bridging Two
Metallic Electrodes¡¨, Nano Express, vol. 5, 99.
1492-1495, (2010)SCI 234. B. T. Lai, C. T. Lee, J. D. Hong, S. L. 235. H. Y. Lee, C. T. Lee and J. T. Yan, ¡§Emission mechanisms of passivated single n-ZnO:In/i-ZnO/p-GaN-heterostructured nanorod light-emitting diodes¡¨, Appl. Phys. Lett., vol. 97, 111111, (2010).SCI 236. H. Y. Lee, S. D. Xia, W. P. Zhang, L. R. Lou, J. T. Yan, and C. T. Lee, ¡§Mechanisms of high quality i-ZnO thin films deposition at low temperature by vapor cooling condensation technique¡¨, J. Appl. Phys., vol. 108, 073119 (2010).SCI 237. T. C. Tsai, D. S. Liu, L. R. Lou, and C. T. Lee, ¡§Structure and photoluminescence of Ge nanoclusters embedded in GeOx films deposited using laser assistance at low temperature¡¨, J. Appl. Phys., vol. 108, 074318 (2010).SCI 238. C. T. Lee, Y. L Chiou and C. S. Lee, ¡§AlGaN/GaN MOS-HEMTs With Gate ZnO Dielectric Layer¡¨, IEEE Electron Device Lett., vol. 31, pp. 1220-1223, (2010)SCI 239. Y. L Chiou and C. T. Lee, ¡§(NH4)2Sx-Treated AlGaN/GaN MOS-HEMTs with ZnO Gate Dielectric Layer¡¨, J. Electrochemi. Sci., vol. 158, pp. H156-159, (2011)SCI 240. C. T. Lee and W. H. Huang, ¡§Integrated Azimuthal LiNbO3 Electrooptical Electromagnetic Field Sensor with Mach-Zehnder Waveguide Modulator and Micro Multi-Annular Antenna¡¨, Microw. Opt. Technol. Lett., vol. 53, pp. 565-567, (2011).SCIpµe½s¸¹:NSC-96-2221-E-006-097-MY3 241. C. T. Lee and J. T. Yan, ¡§Ultraviolet Electroluminescence From ZnO-Based n-i-p Light-Emitting Diodes¡¨, IEEE Photon. Technol. Lett., vol. 23, pp. 353-355, (2011).SCIpµe½s¸¹:NSC99-2221-E006-106-MY3 242. Y. L. Chiou, C. S. Lee, and C. T. Lee, ¡§Frequency and noise performances of photoelectrochemically etched and oxidized gate-recessed AlGaN/GaN MOS-HEMTs,¡¨, J. Electrochemi. Soc., vol. 158, no. 5, pp. H477-H481, (2011).SCIpµe½s¸¹:NSC99-2221-E006-208-MY3 243. T. C. Tsai, L. R. Lou, and C. T. Lee, ¡§Influence of Deposition Conditions on Silicon Nanoclusters in Silicon Nitride Films Grown by Laser-Assisted CVD Method¡¨, IEEE Tran. Nanotechnol., vol. 10, pp. 197-202, (2011).SCI 244. C. T. Lee, Y. S. Chiu, S. C . Ho, and Y. J. Lee, ¡§Investigation of a Photoelectrochemical Passivated ZnO-Based Glucose Biosensor¡¨, Sensors, vol. 11, pp. 4648-4655, 2011. SCIpµe½s¸¹:NSC99-2221-E006-208-MY3 245. C. Y. Tseng, C. K. Lee and C. T. Lee, ¡§Performance enhancement of III¡VV compound multijunction solar cell incorporating transparent electrode and surface treatment¡¨, Prog. Photovolt: Res. Appl., vol. 19, pp. 436-441, 2011. SCIpµe½s¸¹:98-D0204-2, NSC-98-2120-M-006-003, and NSC-98-3114-E-006-004-CC2 246. S. L. Yao, J. D. Hong, C. T. Lee, C. Y. Ho, and D. S. Liu, ¡§Determination of activation behavior in annealed Al¡VN codoped ZnO Films¡¨, J. Appl. Phys., vol. 109, 103504, (2011). SCI 247. M. P. Chang, M. H. Chiang, W. T. Lin, and C. T. Lee, ¡§Growth of ZnGa2O4 nanowires on a ZnO buffer layer by carbothermal reduction of Ga2O3 powder¡¨, Mater. Lett., vol. 65, pp. 1473-1475, (2011). SCIpµe½s¸¹:NSC 99-2221-E-006-088-MY2 248. H. Y. Lee, H. L. Huang, and C. T. Lee, ¡§Investigation of Single n-ZnO/i-ZnO/p-GaN Heterostructed Nanorod Ultraviolet Photodetectors¡¨, IEEE Photon. Technol. Lett., vol. 23, pp. 706-708, (2011). SCIpµe½s¸¹:NSC99-2221-E-006-208-MY3 249. Y. L. Chiou and C. T. Lee, ¡§Performance Improved Mechanisms of Chlorine-Treated AlGaN/GaN MOS-HEMTs with ZnO Gate Dielectric Layer¡¨, J. Electrochem. Soc., vol. 158, pp. H821-H824 (2011). SCIpµe½s¸¹:NSC99-2221-E-006-106-MY3 250. H. Y. Lee, H. L. Huang, C. T. Lee, ¡§Hydrogen sensing performances of Pt/i-ZnO/GaN metal-insulator-semiconductor diodes¡¨, Sens. Actuators B: Chemical, vol. 157 pp. 460¡V465, (2011). SCIpµe½s¸¹:NSC99-2221-E-006-106-MY3 251. Y. S. Chiu and C. T. Lee, ¡§pH Sensor Investigation of Various-Length Photoelectrochemical Passivated ZnO Nanorod Arrays¡¨, J. Electrochem. Soci., vol. 158, pp. J282-J285 (2011). SCIpµe½s¸¹:NSC-99-2221-E-006-208-MY3 and NSC-100-3113-E-492-001 252. C. H. Shen, J. M. Shieh, J. Y. Huang, H. C. Kuo, C. W. Hsu, B. T. Dai, C. T. Lee, C. L. Pan, and F. L. Yang, ¡§Inductively coupled plasma grown semiconductor films for low cost solar cells with improved light-soaking stability¡¨, Appl. Phys. Lett., vol. 99, 033510 (2011). SCI 253. C. T. Lee and H. C. Chen, ¡§Performance improvement mechanisms of organic thin-film transistors using MoOx-doped pentacene as channel layer,¡¨, Org. Electron., vol. 12, pp. 1852-1857 (2011). SCIpµe½s¸¹:NSC 99-2221-E006-106-MY3 254. T. C. Tsai, L. R. Lou, and C. T. Lee, "Charge Storage Characteristics of Silicon Nanoclusters in Silicon Nitride Matrix Grown by Laser Assisted Chemical Vapor Deposition Method", Nanosci. Nanotechnol., vol. 11, pp. 6837-6842 (2011).SCIpµe½s¸¹:NSC 99-2923-E-006-003-MY3 255. Y. L. Chiou and C. T. Lee, "Band Alignment and Performance Improvement Mechanisms of Chlorine-Treated ZnO-Gate AlGaN/GaN Metal¡VOxide¡VSemiconductor High-Electron Mobility Transistors", IEEE Trans. Electron Devices, vol. 58, pp. 3869-3875 (2011). SCIpµe½s¸¹:NSC-99-2221-E-006-208-MY3, 99-EC-17-A-05-S1-154 (B) ·|ij½×¤å
Conference Paper 01.
H.P. Shiao, C.D. Tsai, Y.K. Tu, W. Lin and C.T. Lee, "High Reliability
GaAs Metal-Semiconductor-Metal Photodetectors with InGaP Buffer and Capping
Layers", The Pacific Rim Conference on Lasers and Electro-Optics(CLEO)
p.96 (1995)
02.
C.D. Tsai, C.T. Lee, J.N. Shen, T.E. Nee, H.P. Shiao, C.Y. Wang and J.I. Chi,
"Electron Leakage Improvement of MESFET by Multiquantum Barrier Buffer
Layer", National Electron Devices and Materials Symp. Kaoshiung p.256
(1995) 03.
C.T. Lee and J.H. Yeh, "Long Wavelength Laser Spectra of Nd:AlGaAs
Structure Pumped by AlGaAs Laser", National Electronic Devices and
Materials Symp. Kaoshiung p.293 (1995) 04.
M.L. Wu and C.T. Lee, "A Conformal Mapping Method for Quasi-Static
Analysis of Electrooptic Devices with Coplanar Microstrip Type
Electrode" Proc. of the First Radio Science Symp. Kaoshiung, p.139
(1995) 05.
C.Y. Wang, Z.M. Chuang, W. Lin, Y.K. Tu and C.T. Lee, "Low Threshold
Current Strained-Quantum-Well Complex-Coupled DFB Laser", Proc. of the
First Radio Science Symp. Kaoshiung p.311 (1995) 06.
C.T. Lee and M.L. Wu, "Analysis of Wave Propagation and Optical
Characteristics of Electrooptic Modulator by Combination of Finite Difference
and Conformal Mapping", Proc. of 1995 International Conference on Radio
Science, Beijing, China, p.444 (1995) 07.
C.T. Lee, H.P. Shiao and C.D. Tsai, "The Design of Small Divergence Beam
for InGaAs/InGaP Strained-Quantum-Well Lasers", Proc. of 1995
International Conference on Optoelectronics and Lasers, HangZhou, China, p.34
(1995) 08.
C.T. Lee, H.H. Lai and H.C. Lee, "Complementary Optical Bistable
Switching Using Cross-Circuit Feedback Based on LiNbO3 Crystal", Proc.
of 1995 International Conference on Optoelectronics and Lasers, Hangzhou, China,
p.177 (1995) 09.
L.G. Sheu and C.T. Lee, "Stimulated Emission Cross Sections and
Fluorescence Branching Ratios of Nd in Ti-Diffused Nd:MgO:LiNbO3
Waveguides", Proc. of 1995 International Conference on Optoelectronics
and Lasers, 10.
C.C. Chu, Y.J. Chan, R.H. Yuang, J.I. Chyi and C.T. Lee, "Performance
Enhancement Using WSix/ITO Electrodes in InGaAs/InAlAs MSM
Photodetectors", 2nd Chinese Optoelectronics Workshop p.95 (1995) 11.
C.T. Lee, P.L. Fan and J.C. Lee, "A Novel High-Efficiency Power Divider
with Arbitrary Power Division on Ti/Mg:LiNbO3 Channel Waveguide",
Semiconductor, Fiber and Integrated Optoelectronic Conference, 12.
C.T. Lee, L.G. Sheu and H.C. Lee, "Measurement of Propagation Loss in Ti-Diffused
LiNbO3 Waveguide Resonators with Phase Modulator", Semiconductor, Fiber
and Integrated Optoelectronic Conference, 13.
Z.M. Chuang, C.Y. Wang, W. Lin, H.H. Liao, J.Y. Su, Y.K. Tu and C.T.
Lee, "New Complex-Coupled 14.
C.T. Lee, H.C. Lee and L.G. Sheu, "Improvement of Nonlinear Distortions
with Cascaded Mach-Zehnder Modulator", Proc. of XX International Quantum
Electronics, Sydney, Australia, p.16/95 (1996) 15.
J.I. Chyi, T.E. Nee, C.T. Lee, J.L. Shieh and J.W. Pan, "Formation of
Self-Aligned InGaAs Quantum Dots on GaAs by Molecular Beam Epitaxy",
Ninth International Conference on Molecular Beam Epitaxy, Malibu, California,
U.S.A. 16.
C.T. Lee, L.G. Sheu and H.C. Lee, "Optical Losses Measurement of Channel
Waveguide Devices by Phase Modulator", Proc. Third Chinese
Optoelectronics 17.
T.E. Nee, C.T. Lee, J.W. Pan, and J.I. Chyi, "Molecular Beam Epitaxial
Growth of Self-Assembled In0.5Ga0.5As Quantum Dots on In0.1Ga0.9As and
In0.1Al0.9As", International Electron Devices and Materials Symp.
Hsinchu, p.261 (1996) 18.
C.D. Tsai, H.P. Shiao, C.T. Lee, W. Lin and Y.K. Tu, "A Novel InGaP/GaAs
Metal-Semiconductor-Metal Photodetector", International Electron Devices
and Materials Symp., Hsinchu, p.251 (1996) 19.
M.L. Wu, P.L. Fan, L.G. Sheu and C.T. Lee, "Transmission Characteristics
of Lossless Bends in Optical Waveguides", Photonics/Taiwan, Hsinchu
p.260 (1996) 20.
W.T. Ni, J.T. Shy and C.T. Lee, "Laser Astrodynamics and Geodesy",
Ed. R.T. Jantzen and G.M. Keiser, p.1522, World Scientific Publishing Co.
Pte. Ltd. (1996) 21.
C.Y. Wang, Z.M. Chung, W. Lin, Y.K. Tu and C.T. Lee, "Resistance to
External Optical Feedback of Low Chirp Strained-Quantum Well Complex-Coupled
DFB Laser", Progress in Electromagnetics Research Symposium (PIERS) Hong
Kong, p.711 (1997) Invited
paper 22.
C.D. Tsai and C.T. Lee, "InGaN/GaN Double-Heterostructure Blue
Light-Emitting Diodes", Electronic Devices and Material Symp., Chung-Li,
p.155(1997) 23.
S.M. Liao, C.H. Yang and C.T. Lee, "Effect of Nd Concentration in AlGaAs
Layer Grown by Liquid Phase Epitaxy", Electronic Devices and Material
Symp. Chung-Li, p.444 (1997) 24.
K.L. Jaw, C.T. Lee and C.D. Tsai, "Ohmic Performance Study of Ti/Pt/Au
on N-type InAs/grated InGaAs Layers", Electronic Devices and Material
Symp., Chung-Li, p.448(1997) 25.
T.E. Nee, N.T. Yeh, J.I. Chyi, and C.T. Lee, "Matrix-Dependent
Structural and Photoluminescence Properties of In0.5Ga0.5As Quantum Dots
Grown by Molecular Beam Epitaxy", International Workshop on Nano-Physics
and Electronics, Tokyo, p.187 (1997) 26.
H.H. Lu and C.T. Lee, "Directly Modulated Transmission Systems Using
Half- 27.
J.M. Hsu and C.T. Lee, "Transmission Tolerance by Variant-Index in
Microprism-Type Bent Waveguides", International Photonics Conference, 28.
C.D. Tsai, C.H. Fu and C.T. Lee, "Performance Study of Indium-Tin-Oxide
Transparent Schottky Electrode on GaAs MSM Photodetectors",
International Photonics Conference, Taipei (1998) 29.
M.S. Doong, C.D. Tsai and C.T. Lee, "High Performance Optical Receiver
by Integration of InGaP/GaAs MSM Photodetector and GaAs MESFET",
International Electronic Devices and Material Symp. 30.
C.T. Lee, "Individual Mode's Bending Loss Measurement for Multimode
Channel Waveguides Using Phase Modulator and Prism-Coupler", Proc. SPIE
(1998) 31.
M.S. Doong, C.D. Tsai Y.T. Lyu and C.T. Lee, "High Performance Optical
Receiver by Integration of InGaP/GaAs MSM Photodetector and GaAs
MESFET", International Electronic Devices and Material Symp. 32.
T.E. Nee, N.T. Yeh, J.I. Chyi and C.T. Lee, "Room-Temperature Operation
of In0.5Ga0.5As Quantum Dot Lasers Grown on Misoriented GaAs Substrates by
Molecular Beam Epitaxy", Proc. 2nd International Symposium on Formation,
Physics and Device Application of Quantum Dot Structures, Sapporo, Japan
p.226 (1998) 33.
N.T. Yeh, T.E. Nee, P.W. Shiao, M.N. Chang, J.I. Chyi and C.T. Lee,
"Photoluminescence Characteristics of Self-Assembled In0.5Ga0.5As
Quantum Dot on Vicinal GaAs Substrates",Proc. 2nd International
Symposium on Formation , Physics and Device Application of Quantum Dot
Structures, Sapporo, Japan p.188 (1998) 34. C.T. Lee, "Process and
Characterization of InGaP and Its Applications", International
Electronic Devices and Material Symp. Invited paper 35.
T.E. Nee, N.T. Yeh, J.I.
Chyi and C.T. Lee, "High Characteristic
Temperature-Be-Doped In0.5Ga0.5As Quantum Dot Lasers Grown on GaAs Substrates
by Molecular Beam Epitaxy", Proc. 10th International Conference on
Molecular Beam Epitaxy, Cannes, France, p.308 (1998) 36.
C.D. Tsai, Y.J. Lin and C.T. Lee, ¡§The
Characterization of Mg Implanted GaN Material¡¨
Progress in Electromagnetics Research Symposium (PIERS), p.529 (1999) 37.
C.T. Lee and J.M. Hsu, ¡§Tolerance Study
in Fabrication of Microprism-Type Symmetric Y-Junction Waveguides¡¨ Progress in
Electromagnetics Research Symposium (PIERS), p.889(1999) Invited
paper 38.
C.T. Lee, C.D. Tsai and H.P. Shiao, "High Performance GaAs
Metal-Semiconductor-Metal Photodetectors with Cu/InGaP Schottky
Barriers", The Fifth
International Conference on Advanced Materials, IUMRS-ICAM¡¦99, Beijing China, p.505, (1999) 39.
C.T. Lee, C.D. Tsai and Y.T. Lyu, "Surface Analysis of InGaP Treated
with (NH4)2SX", Symp. On
Spectroscopic Techniques and Surface Science XVII, p.41 (1999) 40.
C.T. Lee and K.C. Shyu, "GaAs Metal-Semiconductor Field Effect
Transistor with InGaP/GaAs Multiquantum Barrier Capping and Buffer
Layers", Third International
Conference on Low Dimentional Structures and Devices, Antalya, Turkey p.067
(1999) 41.
H.W. Kao, C.D. Tsai, B.T. Tang and C.T. Lee, ¡§Thermal
Stability of Ti/Al/Au Ohimc Contacted N-Type GaN¡¦,
Electronic Devices and Material Symp. p.285 (1999) 42.
C.T. Lee and J.H. Huang, ¡§Nonalloyed GaAs
Metal-Semiconductor Field-Effect Transistor¡¨,
Electronic Devices and Material Symp. p.391 (1999) 43.
Y.R. Liu, D.S. Liu and C.T. Lee, ¡§Performance and
Mechanism Study of GaN Light Emitting Diodes with Ion-Induced Damages¡¨, Optical and Photonics 44.
J.M. Hsu, F.T. Hwang and C.T. Lee, ¡§Dependence
of Transmission Efficiency on Fabrication Tolerance in Microprism-Type
Symmetric Y-Junction Waveguides¡¨, Optical and
Photonics Taiwan p.555 (1999) 45.
H.H. Lu, C.T. Kuo, N.C. Wang and C.T. Lee, ¡§Directly
Modulated 1550nm Am-VSB Optical CATV Long-Distance Transmission System¡¨, Optical and Photonics
Taiwan p.449 (1999) 46.
H.W. Kao, C.D. Tsai, Y.J. Lin and C.T. Lee, ¡§Diffusion
Barrier Pt Functions on Ohmic Thermal Stability of N-Type GaN Materials¡¨, Optical and Photonics Taiwan p.47 (1999) 47.
C.T. Lee, C.D. Tsai and Y.T. Lyu, ¡§The
Characteristics and Thermal Reliability of InGaP Schottky Contact with Copper¡¨, Chinese Institute of Materials Science p.88 (1999) 48.
C.T. Lee, ¡§Neodymium-Diffused Lithium
Niobate Channel Waveguide Laser and Amplifier¡¨,
Optical and Photonics Invited
paper 49.
C.D. Tsai, and C.T. Lee, ¡§High
Performance of GaAs Metal-Semiconductor-Metal Photodetectors with Cu Schottky
Electrodes¡¨, SPIE Photonics (2000) 50.
C.T. Lee, ¡§Systematic Design and Analysis
of Microprism-Type Low-Loss and Wide-Angle-Bent Waveguides in Integrated
Optics¡¨, International Conference on the Application
of Photonics Technology, Quebec, Canada SPIE Vol.4087, p.192 (2000) Invited
paper 51.
C.T. Lee, ¡§Long Term Thermal Stability of
Ohmic Contact on GaN Layers¡¨, The 4th Seminar on
Science and Technology, Nitride Semiconductor and Devices, Invited
paper 52.
C.T. Lee, B.T. Tong, H.Y.
Lee and C.D. Tsai ¡§Ohmic Performance of ZnO
and ITO/ZnO Contacted with N-type GaN Layer¡¨,
International Conference on Electronic Materials and European Materials
Research Society, Strasbourg, France (2000) 53.
C.D. Tsai, Y.J. Lin, D.S.
Liu and C.T. Lee, ¡§High Performance of GaAs
Metal-Semiconductor-Metal Photodetectors with Cu Schottky Electrodes¡¨, SPIE Photonics, Optoelectronic Materials and Devices II, Vol.
4078, p.724 (2000) 54.
Y.J. Lin and C.T. Lee, ¡§Ohmic Performance Improvement of n-type GaN by (NH4)2Sx Treatment ¡§, International Electronic Devices and Material Symp. p.300 (2000) 55.
H.Y. Lee, I.J. Lin, and
C.T. Lee, ¡§Investigation of Double-£_-Doped InAlGaP/GaAs/InGaAs MESFET¡¨
International Electronic Devices and Material Symp. p.141 (2000) 56.
D.S. Liu, C.D. Tsai and
C.T. Lee, ¡§Thermal Reliability and
Degradation Mechanism of Cu Schottky Contact to InGaP¡¨, International Electronic Devices and Material Symp. p.110 (2000) 57.
C.T. Lee, ¡§Passive Mechanism Analysis and Ohmic Formation of (NH4)2Sx-treated
III-V Nitride Layers¡¨, International Electronic
Devices and Material Symp. p.274 (2000) Invited
paper 58.
B.T. Tang, C.Y. Lo, Q.X. Yu, and C.T.
Lee, ¡§Improved Ohmic Performance for
ITO Contact to n-GaN with ITO/ZnO Multilayers¡¨, 2nd
International Photonics Conference p.217 (2000) 59.
H.H. Lu, C.T. Kuo, N.C.
Wang and C.T. Lee, ¡§Long-Distance Transmission
of AM-VSB CATV Systems Using Fabry-Perot Laser Diode and Fiber Bragg Grating¡¨, 2nd International Photonics Conference p.373 (2000) 60.
C.T. Lee, H.H. Lu and N.C.
Wang, ¡§Dispersion Compensation in
Externally Modulated Transmission System Using Chirped Fiber Grating¡¨, 2nd International Photonics Conference, p. 392 (2000) 61. C.T. Lee, ¡§Ohmic Study of Blue LED by
Surface Treatment¡¨, The Fifth Chinese Symposium on
Optoelectronics, Invited
Paper 62. C.T. Lee, ¡§Passivation Mechanism and
Analysis of Surface-Treated InGaN Layers¡¨, Advanced Compound
Semiconductor Materials and Devices,
Invited Paper 63. D.S. Liu, C.D. Tsai and C.T. Lee, ¡§Thermal
Degradation Mechanism of Cu/Au Contact to InGaP Photodector¡¨, PIERS 2001, 64. H.Y. Lee, I.J. Lin and C.T. Lee, ¡§Optical
Performances of Double-£_-Doped InAlGaP/GaAs/InGaAs
MESFET¡¨,PIERS 2001,
Osaka,
Japan p.478 (2001) 65. Q.X. Yu, B.T.
Tang and C.T. Lee, ¡§ITO/ZnO/GaN Heterostructure and Contact Performances in Blue LED¡¨, PIERS 2001, 66. C.T. Lee
and Y.J.
Lin, ¡§ (NH4)2Sx-treated
Ohmic Formation in Blue Light Emitting
Diode¡¨, PIERS 2001 ,
Invited paper 67. C.T. Lee,
H.P. Shiao and
Y.K. Tu , ¡§ Growth and Performance
Study of Aluminum-Free Strained Quantum-Well Pumping Lasers¡¨,
International Laser, Lightwave and Microwave Conference, 68. C.S. Lee, Y.J.
Lin and C.T. Lee, ¡§Oxidation Mechanism for Ohmic Formation in Ni/Au Contacts to
P-Type GaN Layers¡¨, Electronics Devices and Materials
Symposia, p.171 (2001) 69. H.Y. Lee, S.Y. Zeng, H.M. Shieh and C.T. Lee, ¡§Schottky Diodes of InAlGaP
Schottky Contact with Ti/Pt/Au, Pt/Au and Au Metals¡¨ , Electronics Devices and Materials
Symposia, p.184 (2001) 70. T.W . Huang and C.T. Lee, ¡§AlGaN/GaN
Heterostructure Metal-Semiconductor-Metal Ultraviolet Photodetector ¡§,
Electronics Devices and Materials Symposia, p.835 (2001) 71. B.J. Jiang, S.H. Do and C.T. Lee, ¡§Investigation of Electrical and Optical Properties of
Si-Implantation in P-GaN¡¨ , Proc. Optics and Photonics 72. H.L. Ma, H.H. Lu, C.S. Lee, C.T. Lee and N.C. Wang, ¡§Up-Stream noise for the Internet Access for Fiber Optical CATV
Systems ¡§, Proc. Optics and Photonics Taiwan, p.198 (2001) 73. C.L. Hsu
and C.T. Lee , ¡§The Study of Surface Acoustic Wave Device Fabricated on GaN Based substrates¡¨, Proc. Optics and Photonics
74. C.H. Lin, T.H. Lee, H.H.
Tu, G.H. Sun and C.T. Lee,
¡§Silicon Oxynitride Waveguide in DWDM Growth by CO2 Laser Assisted Plasma
Enhanced Chemical Vapor Deposition¡¨, Proc. Optics and
Photonics Taiwan, p.535 (2001) 75. H.L. Ma, H.H. Lu, C.S. Lee, C.T. Lee and N.C. Wang, ¡§A DWDM System for 256-QAM Transmission Over 76. C.T. Lee and Y.J. Lin, ¡§Surface
Treatment and Passivation of III-Nitride LEDS¡¨,
Photonics West, San Jose, CA. (2002), SPIE, vol. 4641 (2002)
Invited paper 77. Y.J. Lin, C.S. Lee and C.T. Lee, ¡§Induced
variation in barrier height and ohmic formation of oxidized Au/Ni/(NH4)2Sx¡Vtreated p-GaN¡¨, International Topical
Meeting on Optics in computing, 78. H.Y. Lee and C.T. Lee, ¡§The Investigation
for Various Treatment of InAlGaP Schottky Diodes¡¨,
International Conference on Electronic Materials, 79. C.S. Lee, C.T. Lee, F.T. Hwang and Y.J. Lin, ¡§Activation of Mg in p-type GaN by excimer laser¡¨, Proc. Optics and Photonics, p.159 (2002). 80. T.H. Lee, K.H. Tu and C.T. Lee, ¡§ Novel
structure for flattened response of arrayed-waveguide grating multiplexer¡¨, Proc. Optics and Photonics, p.105 (2002). 81. H.Y. Lee, H.W. Chen and C.T. Lee, ¡§Metal-Oxide-Semiconductor
Devices on n-type GaN¡¨, Proc. Optics and Photonics,
p.162 (2001). 82. D.S. Liu and C.T. Lee, ¡§Thermal
degradation mechanism and deep level investigation for Cu/Au contacts to
InGaP Schottky diodes¡¨, International Electronic
Devices and Material Symp. p.129 (2002). 83. C.H. Lin, T.H. Lee, S.C. Lin and C.T. Lee, ¡§Properties of silicon nanostructures deposited by laser assisted
plasma enhanced chemical vapor deposition system¡¨,
International Electronic Devices and Material Symp. p.337 (2002). 84.
H.Y. Lee, W.Y. Lo and C.T.
Lee, ¡§Investigation of
metal-semiconductor-metal photodetectors with InAlGaP capping and buffer
layers¡¨, International Electronic Devices and
Material Symp. p.381 (2002). Invited paper 87.
C.T. Lee and H.W. Chen, ¡§Oxidation
Growth for GaN metal-oxide-semiconductor Devices", First Asia-Pacific
Workshop on Widegap Semiconductors, Invited paper 88.
W.H. Huang and C.T. Lee, ¡§Surface Induced
Mechanism for Sulfurated GaN Layers¡¨, First
Asia-Pacific Workshop on Widegap Semiconductors, Hyogo, Japan, p.94 (2003). 89. H.Y. Lee and C.T. Lee, ¡§Surface
Passivation of GaAs MSM-PDs Using the Photoelectronchemical Oxidation Method¡¨, Electronic Devices and Material Symp. p.288 (2003). 90. D. S. Liu and C. T. Lee, 2003, Nov. 21-22, ¡§Characteristics of ZnO film prepared by rf sputtering¡¨, Electron Devices and Materials Symposium Keelung, Taiwan, p. 449 (2003). 91.
Z. D. Li, Y. J. Lin and C. T. Lee, ¡§The
dependendence of p-type GaN ohmic contact performances on the thermal
treatment time¡¨, Optics and Photonics 92.
S. H. Chang, H. Y. Lee, W. Y. Lo and C. T. Lee, ¡§Surface passivation of N-type GaAs MESFETs using the
photoelectrochemical oxidation method¡¨, Optics and
Photonics Taiwan, Proc. I, p. 35 (2003). 93.
³¯«T¦N, ³¯«Â§» and C. T. Lee, ¡§The fabrication and performance of n-type GaN MOSFETs¡¨, Optics and Photonics 94.
§õ©v«H, ÃQ§Ó¦w and C. T. Lee, ¡§Acoustooptical tunable filter wavelength converter¡¨, Optics and Photonics 97. C. H. Lin, T. C. Tsai, C. T. Lee, and H. Y. Lee, ¡§Photoluminescence degradation mechanism of Si nanoclusters by
long-term He-Cd laser irradiation¡¨, International
Electronic Devices and Material Symp., Hsinchu, Taiwan, p. 237 (2004). 98. C. T. Lee, U. Z. Yang, H. Y. Lee, and P. S. Chen, ¡§Photoluminescence studies of Carbon implanted GaN:Mg¡¨, International Electronic Devices and Material Symp., Hsinchu,
Taiwan, p. 331 (2004). 99. T. H. Lee, F. C. Pai1, W. T. Shay, and C. T. Lee, ¡§Novel structure of electromagnetic field sensor with LiNbO3
optical modulator and antennas¡¨, Optics and Photonics
Taiwan, Chung-Li, Taiwan, B-SA VII 2-6 (2004). 100.§õ®æÞ³¡B§õªY¿¢¡B§õ²M®x, ¡§´á¤Æ¾TñS/´á¤ÆñS²§½è±µ±ª÷ÄÝ-¥b¾ÉÅé-ª÷Äݵµ¥~¥úÀË´ú¾¹¡¨, Optics and Photonics Taiwan, Chung-Li, Taiwan, A-SU-I 9-1 (2004). 101. D. S. Liu, and C. T. Lee, ¡§X-ray Photoelectron Spectroscopy Study for Cu/Au Schottky Contact
on InGaP Layer¡¨, Optics and Photonics 102. ©P°êÀs¡B¤ý°iááB§õ²M®x, ¡§½è¤l¥æ´«Ánªiªi¾É¤§Án¥ú¥i½ÕªiªøÂà´«¾¹¡¨, Optics and Photonics Taiwan, Chung-Li, Taiwan, PB-SU1-75 (2004). 103. C. T. Lee and C. H. Lin, ¡§Investigated the performance of Si nanostructure in Si oxide matrix¡¨, ²Ä¤C©¡¨â©¤¤T¦a¤¤µØ¥ú¹q¤l¬ã°Q·|, ¥x¤¤ (2005). Invited paper 104. C. T. Lee, ¡§GaN Metal-Oxide
Semiconductor Field-Effect Transistor
Devices¡¨, Asia-Pacific Workshop on
Widegap Semiconductors, Invited paper 105. C. T. Lee, ¡§III-V nitride
base MOS devices¡¨, The 9th National MOCVD Academic
Conference of China, Invited paper 106. C. T. Lee, T. H. Lee, F. C. Pai and W. T. Shay, ¡§Optical Waveguide Electromagnetic Signal Sensors¡¨, The 10th Optoelectronics and Communications Conference, 107. J. C. Wang, I Y. Fu, and C. T. Lee, ¡§2.4GHz Microstrip Bandpass Filter on Al2O3 Substrate
by Thin-Film Technology¡¨ CECA 2005
Conference on electronic communication and applications, 108. D. S. Liu, C. C. Wu, and C. T. Lee, ¡§A transparent electrode prepared by co-sputtered indium tin oxide and zinc oxide targets¡¨, Second Asia-Pacific Workshop on Widegap Semiconductors, Proc. p. 152, Hsinchu, Taiwan, March 7-9 (2005). 109. D. S. Liu, C. C. Wu, and C. T. Lee, ¡§A transparent electrode prepared by co-sputtering system¡¨, 10th International Symposium on Microwave and Optical Technology (ISMOT), Proc. p.523, Fukuoka, Japan, August 22-25 (2005). 110. D. S. Liu, C. C. Wu, and C. T. Lee, ¡§Microstructure
investigations for ITO co-sputtered with ZnO¡¨,
Twelfth Canadian Semiconductor Technology Conference (CSTC), Proc. p.221, 111. D. S. Liu, C. C. Wu, C. H. Lin and C. T. Lee, ¡§Electrical, Optical and Structure Properties of ITO Films Cosputtered with ZnO¡¨, International Conference on Solid State Devices and Materials, Proc. p. 124, Kobe, Japan, Sep. 12-15 (2005). 112. D. S. Liu, C. H. Lin, C. C. Wu and C. T. Lee, ¡§A Piezoelectric ZnO Film Prepared by RF Magnetron Sputtering¡¨, International Conference on Solid State Devices and Materials, Proc. p.126, Kobe, Japan, Sep. 12-15 (2005). 113. D. S. Liu, C. H. Lin, C. C. Wu and C. T. Lee, ¡§The Preparation of Single-Crystal ZnO Film and Its Application on Layered SAW Device¡¨, 2nd International Symposium on Point Defect and Nonstoichiometry, Kaohsiung, Taiwan, Oct. 4-6, (P2-11) (2005). 114. D. S. Liu, Y. K. Liao, C. Y. Wu, F. S. Juang and C. T. Lee, ¡§A Silicon Oxide Hard Coating Deposited on Flexible Substrate by TMS - PECVD System¡¨, International Conference on Advanced Manufacture, Proc. p.562, Taipei, Taiwan, Nov. 28 ¡V Dec. 02 (2005). 115. K. W. Lee, H. Y. Lee, L. H. Huang, Q. X. Yu and C. T. Lee, ¡§ Investigation of AlGaN/GaN heterojunction
Metal-Semiconductor-Metal photodetectors¡¨ Electronic
Devices and Material Symp. p.62 (2005). 116. L. Z. Yu, D. S. Liu and C. T. Lee, ¡¨Investigation
of electrical and optical properties of antimony doped ZnO films for UV
transparent electrode¡¨ Electronic Devices and
Material Symp. p.87 (2005). 117. T. C. Tsai, L. W. Lai, J. H. Cheng, L. R. Lou and C. T. Lee, ¡¨Investigation of silicon nanostructure embedded in silicon nitride
grown by laser assistance¡¨ Electronic Devices and
Material Symp. p.100 (2005). 118. ¶À¥ß½å¡BÃÓ°¶¤å¡B§õªY¿¢¡B§õ²M®x,¡¨¥ú¹q¤Æ¾Ç®ñ¤Æªk»s§@´á¤ÆñSª÷®ñ¥b³õ®Ä¹q´¹Å餧¬ã¨s¡¨ Optics and Photonics Taiwan, Tainan, Taiwan, A-FR-I 3-3 (2005). 119. P. S. Chen, H. Y. Lee, Q. X. Yu, L. R. Lou and C. T. Lee, ¡¨Investigation and analysis of Chlorine-Treated p-type GaN surface using X-ray photoelectron spectroscopy¡¨ Optics and Photonics Taiwan, Tainan, Taiwan, A-SA-I 5-4 (2005). 120. §õ©v«H¡B½²§»ªN¡B§d¬f¼Ý¡B§õ²M®x, ¡§¥H෻ľY´¹Åé¬ã»s¿nÅ餯¤§¥ú¹q½Õ¨î«¬¹qºÏ³õ·P´ú¾¹¡¨ Optics and Photonics Taiwan, Tainan, Taiwan, B-FR-IV 2-1 (2005). 121. ªL¤å²»¡BªL¯§¥ò¡B§õ²M®x, ¡§¸g²¸¤Æ»Ï³B²z¤§n «¬´á¤ÆñS§ïÅÜªí±´_¦X³t²v»P¨ä¥ú¹q¯S©Ê¤§¬ã¨s¡¨ Optics and Photonics Taiwan, Tainan, Taiwan, PA-FR1 031 (2005). 122. ³\¥[ª@¡B§õ¬F¾Ë¡B¼B¥N¤s¡B§õ²M®x, ¡§¥H®gÀWºÏ±±ÂqÁá¨t²Î¤Î¼ö°h¤õ³B²z»s§@°ª«~½è®ñ¤Æ¾NÀ£¹qÁ¡½¤¡¨, Optics and Photonics Taiwan, Tainan, Taiwan, PA-FR1 062 (2005). 123. Q. X. Yu and C. T. Lee, ¡§Red
luminescence in Sol-Gel prepared ZnO films¡¨, Optics
and Photonics 124. ¸â¾±¬F¡B§õªY¿¢¡B§õ²M®x, ¡§ºÒÂ÷¤l§G´Ó´á¤Æ¾TñS/´á¤ÆñS²§½è±µ±ª÷ÄÝ-¥b¾ÉÅé-ª÷ÄÝ¥ú°»´ú¾¹¤§»s§@»P¯S©Ê¤ÀªR¡¨, Optics and Photonics Taiwan, Tainan, Taiwan, PA-FR1 216 (2005). 125. §d¬F¬v¡B³¯¨Ì©ý¡B¼B¥N¤s¡B§õ²M®x, ¡§¥H¹q¼ß¼W±j¤Æ¾Ç®ð¬Û¨I¿n¨t²Î¦b¶ì½¦°òªO¤W»s³Æ¨¾¤ô½¤¤§¬ã¨s¡¨ Optics and Photonics Taiwan, Tainan, Taiwan, PA-SA1 008 (2005). 126. T. C. Tsai, J. H. Cheng, L.W. Lai, Q. X. Yu, C. F. Chen, and C. T.
Lee, ¡§The blueshift of
photoluminescence from silicon nanoparticles embedded in silicon nitride¡¨, Asia-Pacific International Symposium on the Basics and
Applications of Plasma Science and Technology, Yunlin, Taiwan (2005) 127. C. T. Lee, T. H. Lee, F. C. Pai, and W. T. Shay, ¡§Electromagnetic Field Electrooptical Sensor Using LiNbO3
Mach-Zehnder and Antenna¡¨, Symp. on Optical
Communication Technologies, p. 20, Invited paper 128. K. H. Pan, P. S. Chen, H. Y. Lee, and C. T. Lee, ¡§Current spreading of GaN light-emitting diodes using plasma treatment¡¨, The 11th Optoelectronics and Communications Conference, Kaohsiung, Taiwan, 4E2-4 (2006). 129. R. X. Wu, Y. M. Chen and C. T. Lee, ¡§ Investigation of optical properties of ZnO nanorods grown at low
temperature¡¨,
The 11th Optoelectronics and Communications Conference, Kaohsiung,
Taiwan, 130. D. S. Liu, C. H. Lin, F. C. Tsai, C. S. Sheu, and
C. T. Lee, ¡§Thermal Degradation Investigations for
Indium Zinc Oxide Films Prepared by Radio Frequency Magnetron Cosputtering¡¨, The 11th Optoelectronics and Communications Conference,
Kaohsiung, Taiwan, 131. T. C. Tsai, and C. T. Lee, ¡§Investigation of Structure and Performances of Silicon
Nanoclusters Embedded in Silicon Nitride Grown by Laser Assistance¡¨, 4th International Conference on Quantum Engineering Science, 132. T. C. Tsai, and C. T. Lee, ¡§Investigation of Structure and Performances of Silicon
Nanoclusters¡¨, The 4th Invited paper 133. Y. L. Song, N. Wang, G. Qiu, C. S. Tsai, C. T. Lee and C. S. Tsai, ¡§MEMS-based MHz ultrasonic nozzles and application¡¨, 5th Annual Industry Research Symposium Engineering in Medicine & Life Chips Technologies, UC Irvine, Irvine, California, May 15-17 (2006). 134. C. T. Lee, and T. C. Tsai, ¡§Silicon nanoclusters embedded in silicon nitride matrix¡¨, The 6th Emerging Information Technology Conference, Dallas, U. S. A (2006) Invited paper 135. H. Y. Lee, Y. F. Lin, M. Y. Wang and C. T. Lee, ¡§Investigation of GaAs MOSFETs with Gate Oxide Grown Using
Photoelectrochemical Oxidation Method¡¨, International
Conference on 136. P. S. Chen and C. T. Lee, ¡§Mechanism investigation of chlorine-treated InGaN/GaN light-emitting diodes¡¨, International Conference on Solid State Devices and Materials, Proc. p. 672, Yokohama, Japan, Sep. 12-15 (2006). 137. D. S. Liu, C. H. Lin, C. S. Sheu and C. T. Lee, ¡§Study of the Improved conductivity of Indium-tin Oxide Films Cosputtered with Zinc Oxide at Room Temperature from Thermal Degradations¡¨, International Conference on Solid State Devices and Materials, Proc. p. 714, Yokohama, Japan, Sep. 12-15 (2006). 138. D. S. Liu, C. Y. Wu, B. W. Huang and C. T. Lee, ¡§Effect of Oxygen Contents on the Property of Hydrophobic Thin Films Deposited on Flexible Substrates Using Plasma-enhanced CVD¡¨, International Conference on Solid State Devices and Materials, Proc. p. 758, Yokohama, Japan, Sep. 12-15 (2006). 139. C. T. Lee, ¡§Optoelectronic
nanostructure of thin film¡¨, International Workshop
on Photonics and Display Technologies (IWPD2006), p.28, Invited paper 140. C. S. Sheu, D. S. Liu, F. C. Tsai, and C. T. Lee,
¡§P-type Zinc Oxide Films Prepared Using Radio
Frequency Magnetron Cosputtering System¡¨, 2006
International Electron Devices and Materials Symposium, Proc (A,D). p. 82, 141. ³\¥[ª@¡B§d¬F¬v¡B§õ²M®x¡B¼B¥N¤s¡A¡§¥H®gÀWºÏ±±¦@ÂqÁá¨t²Î¨I¿n®ñ¤Æ¾N-´á¤Æ¾TÁ¡½¤¤§¬ã¨s¡¨¡AOptical and Photonics Taiwan 2006 (AP-095). 142. H. Y. Lee, Y. F. Lin, M. Y. Wang, and C. T. Lee, ¡§The performance of the GaAs oxide was grown by using photoelectrochemical oxidation method in GaAs MOS devices¡§, International Electronic Devices and Material Symp., PA048 ,Tainan, Taiwan, 2006. 143. ªL¤¸´I¡B§õªY¿¢¡B§õ²M®x, ¡§¥H·s¦¡¥ú¹q¤Æ¾Ç®ñ¤Æªk¦¨ªø¯~¤ÆñS®ñ¤Æ¼h¤§¯S©Ê¬ã¨s¡¨, Optics and Photonics Taiwan, AP001, Hsinchu, Taiwan, 2006. 144. ³¯¹©³ó¡B³¯±ê¨|¡B¤ý»Ê¼Ý¡B§õªY¿¢¡B§õ²M®x, ¡§³z©ú¹q·¥¤§³·±Y«¬·P¥ú¤G·¥Åé»s§@¤Î¯S©Ê¬ã¨s¡¨, Optics and Photonics Taiwan, AP006, Hsinchu, Taiwan, 2006. 145. P. S. Chen, Y. H. Zhou, Y. T. Lee, and C. T. Lee ¡§Mechanism Investigation of Chlorine-treated GaN-based Ultraviolet
Photodetectors¡¨ Optics and Photonics 146. T. C. Tsai and C. T. Lee, ¡§Electroluminescence emission of light-emitting devices using
crystalline nanoclusters embedded in silicon nitride matrices¡¨ Optics and Photonics 147. L. H. Huang, X. Y. Huang, and C. T. Lee, ¡§Annealing effects of oxide layers directly grown by photoelectrochemical oxidizing Al0.1Ga0.9N films,¡§ International Electron Devices and Materials Symposium(IEDMS), Tainan, PA044,2006 148. L. H. Huang, H. Y. Lee, X. Y. Huang and C. T.
Lee,¡§Investigation of AlGaN MOS devices with oxidized
layer grown using Photoelectrochemistry Oxidation Method,¡§, Optics and Photonics 149. ¿ààT¤å¡B§õ²M®x, ¡§ÂqÁá°ª«~½è®ñ¤Æ¾NÁ¡½¤¯S©Ê¤§¬ã¨s¡¨, 2006¯à·½»P¥ú¹qÁ¡½¤¬ì§Þ¬ã°Q·|º[°ê¬ì·|±MÃDpµe¬ã¨s¦¨ªGµoªí·|, pp. 22-24 (2006) 150. L. W. Lai and C. T. Lee, ¡§Influence of atmosphere and substrate temperature on optical and electrical properties of ZnO thin film by magnetron sputtering¡¨, The International Conference on Technological Advances of Thin Films & Surface Coatings, , Singapore, p. 251 (2006) 151. L. Z. Yu, and C. T. Lee, ¡§Investigation of electrical and optical properties of antimony doped ZnO films for UV transparent electrode¡¨, The International Conference on Technological Advances of Thin Films & Surface Coatings, Singapore, p. 270 (2006) 152. D. S. Liu, C. Y. Wu, B. W. Huang, C. T. Lee, and
F. S. Juang, ¡§A novel buffer layer to improve the
hard coating adhesion contacts on flexible substrates¡¨, ¡§Thin Films 153. C. S. Lee, K. H. Pan, Y. T. Lee, Y. H. Zhou, P. S. Chen and C. T. Lee, ¡§Current spreading of GaN light-emitting diodes using plasma treatment¡¨, International Electron Devices and Materials Symposia, p.19 (2006). 154. R. X. Wu, M. K. Wang and C. T. Lee, ¡§Ultraviolet light-emitting devices of ZnO/GaN p-n and p-i-n heterojunctions¡¦, International Electron Devices and Materials Symposia, p. 144 (2006) 155. C. T. Lee and L.
H. Huang, ¡§Investigation of MOS diodes with AlGaN
oxide film grown byphotoelectrochemiatry oxidation method¡¨, The 211th Meeting of The Electrochemical Society, Invited paper 156. C. T. Lee, T. H. Lee and P. I Wu, ¡§Integrated LiNbO3 Mach-Zehnder type electrooptical electromagnetic sensor¡¨, The 7th Pacific Rim Conference on Lasers and Electro-Optics, Seoul, Korea, TuD3-3 (2007) 157. L. H. Huang, S. H. Yeh, C. T. Lee ,H. P. Tang, J. Bardwell and J. B. Webb, ¡§Investigation of AlGaN/GaN metal-oxide semiconductor high electron mobility transistors using photoelectrochemical oxidation method¡¨, The 7th Pacific Rim Conference on Lasers and Electro-Optics, Seoul, Korea, WA1-6 (2007) 158. H. Y. Lee, M. Y. Wang and C. T. Lee, ¡§Ultraviolet photocodetector based on MgxZn1-xO(0£x≤0.36) thin films deposited by RF magnetron sputtering¡¨, The 7th Pacific Rim Conference on Lasers and Electro-Optics, 159. L. W. Lai, J. T. Chen and C. T. Lee, ¡§Mechanism investigation of (NH4)2Sx-treated III-V compounds multi-junction solar cell¡¨, International Conference on Solid State Devices and Materials, Proc., Tsukuba, Japan, p. 554, Sep. 19-21 (2007). 160. D. S. Liu, C. W. Cheu, F. C. Tsai, and C. T. Lee, ¡§Properties of zinc oxide films cosputtered with various aluminum contents at room temperature¡¨, International Conference on Solid State Devices and Materials, Proc., Tsukuba, Japan, p. 590, Sep. 19-21 (2007). 161. D. S. Liu, C. Y. Wu, C. S. Shei, and C. T. Lee, ¡§Activation of nitrogen-acceptors in Al-N codoped zinc oxide films prepared by radio frequency magnetron cosputtering technology¡¨, International Conference on Solid State Devices and Materials, Proc., Tsukuba, Japan, p.592, Sep. 19-21 (2007). 162. Y. Zhang, D. J. Chen, and C. T. Lee, ¡§Room temperature negative differential resistance in Au/single ZnO
wire/Au junction structure¡¨, 212th Electrochemical
Society Meeting, 163. H. Y. Lee, P. S. Chen, and C. T. Lee, ¡§High performance of GaN metal-semiconductor-metal photodetectors with chlorine surface treatment¡¨, The 34th International Symposium on Compound Semiconductors (ISCS 2007), Kyoto, Japan, p. 38 (2007). 164. L. H. Huang, S. H. Yeh, and C. T. Lee, ¡§Investigation of AlGaN/GaN MOS-HEMTs with gate insulator grown by
photoelectrochemical oxidation method¡¨ The 34th
International Symposium on Compound Semiconductors (ISCS 2007), 165. C. T. Lee and R. X. Wu, ¡§Ultraviolet light-emitting devices of ZnO/GaN p-n and p-i-n heterojunctions¡¨, The 3th National ZnO Academic Conference of China, Hang zhou, China (2007). Invited paper 166. M. K. Wang, W. H. Huang, H. Y. Lee, C. T. Lee, ¡§Investigation of ZnO:In nanorods deposited by vapor cooling
condensation method¡¨, IEEE Region 10 Conference
(TENCON), 167. L. H. Huang, C. L Lu, C. T. Lee, ¡§Investigation of AlGaN/GaN/AlGaN metal-oxide-semiconductor high electron mobility transistors¡¨, IEEE Region 10 Conference (TENCON), Taipei, p. 12 (2007). 168. C. T. Lee, H. Y. Lee, C. C.
Lin, P. S. Chen, ¡§Mechanisms and high
performances of chlorine-treated GaN ultraviolet photodetectors¡¨, SPIE Photonic Asia, Beijing, China, 6838-122 (2007). Invited paper 169. L. W. Lai, C. H. Liu, C. T. Lee, ¡§Investigation of silicon nanoclusters embedded in ZnO Films grown by Co-sputter System at Low Temperature¡¨, International Electron Devices and Materials Symposium, Hsinchu, PC-3 (2007). 170. C. T. Lee, K. C. Gan, X. Y. Huang, ¡§ Light output enhancement of light emitting diodes by photoelectrochemical etching method¡¨, International Electron Devices and Materials Symposium, Hsinchu, PD-25 (2007). 171. K. C. Gan, Y. T. Lee, C. T. Lee, ¡§Current Spreading on High-Power GaN-based LEDs using a Current Blocking Layer Structure¡¨ , Optics and Photonics Taiwan, Taichung, p. 49 (2007) 172. J. T. Yan, Y. H. Chou, C. T. Lee, ¡§Light
extraction efficiency improvement of GaN-based light-emitting diodes¡¨, Optics and Photonics 173. L. Z. Yu, H. W. Ho, S. Y. Liou, H. Y. Lee and C. T. Lee, "Investigation of efficiency and color purity of OLED utilizing co-host emitter", Optics and Photonics Taiwan, Taichung, p. 83 (2007). 174. C. M. Lin, C. L. Lu, L. H. Huang and C. T. Lee, ¡¥Investigation of AlGaN/GaN/AlGaN metal -oxide-semiconductor high electron mobility transistors using insulator layer directly grown by photoelectrochemical oxidation method¡¨, Optics and Photonics Taiwan, Taichung, p. 66 (2007). 175. ½²´I¶v, ¦ó©¾¿Î, 李²M®x, 劉¥N¤s, ¡§¦b«Ç·ÅÀô¹Ò¤U¥H不¦P»sµ{¤è¦¡¨I¿n¾TºUÂø®ñ¤Æ¾N³z©ú¾É¹qÁ¡½¤¯S©Ê¤§¬ã¨s¡¨, Optics and Photonics Taiwan, Taichung, p. 70 (2007). 176. C. T. Lee, ¡§Silicon nanostructure light-emitting Devices¡¨, Optics and Photonics Invited paper 177. Y. H. Chou, J. T. Yan, H. Y.
Lee, C. T. Lee, ¡§AZO films with Al
nano-particles to improve the light extraction efficiency of GaN based
light-emitting diodes¡¨, SPIE Photonics West
Conference, California, USA,
6894-47 (2008) 178. C. T. Lee, ¡§Progress in photovoltaics¡¨, The 8th
Emerging information and Technology Conference, Tainan, Taiwan, p. 27, Nov.
20-21 (2008) Invited paper 179. C. T. Lee, J. G. Lin, and H.
Y. Lee, "Investigation of silicon-germanium metal-oxide-semiconductor
field-effect transistors grown by laser-assisted plasma-enhanced chemical vapor
deposition", 5th International Conference on Group IV Photonics,
Sorrento, Italy, p. 161, Sep. 17-19 (2008). 180. C. C. Lin, H. Y. Lee, and C. T. Lee, ¡§Light output enhancement of GaN-based light-emitting diodes with oblique indium-tin oxide¡¨, International Conference on Solid State Devices and Materials, Proc., Tsukuba, Japan, p. 522, Sep. 23-26 (2008). 181.J. T. Yan, L. R. Lou and C.
T. Lee, "ZnO-nanorods-on-GaN heterojunction light-emitting diode grown
by vapor cooling condensation method", International Conference on Solid
State Devices and Materials, Proc., Tsukuba, Japan, p. 546, Sep. 23-26
(2008). 182. C. T. Lee and L. H. Huang, ¡§Investigation and fabrication of AlGaN/GaN MOS-HEMTs with gate
insulators grown by photoelectrochemical oxidation method¡¨, Pacific Rim Meeting (PRiME) 2008, Invited paper 183. L. H. Huang, N. T. Shiau, and C.
T. Lee, "P-GaN metal-oxide-semiconductor diodes with gate insulator
grown using bias-assisted photoelectrochemical oxidation method" IEEE
Nanotechnology Materials and Devices Conference (NMDC 2008), 184. C. T. Lee, W. M. Shien, H. Y. Lee, and C. H. Chou, ¡§ZnO:Al Based Transparent Thin Film Transistors¡¨, IEEE LEOS Annual Meeting Conference Proceeding, CA, USA, MG3, p. 65, 9-13 Nov (2008) 185. Y. F. Chen, J. F. Jian, L. R. Lou, and C. T. Lee, ¡§Indium Function of In-doped ZnO nanorods grown by catalyst-free chemical vapor deposition,¡¨ International Electron Devices and Materials Symposium, Hsinchu, p. 36 (2008) 186. L. Z. Yu, H. W. Ho and C. T.
Lee, ¡§RGB tricolor with improved luminance efficiency
produced by white organic light-emitting diodes with microcavity structure¡¨, International Conference on Optics and Photonics 187. J. T. Yan, K. C. Kan, and C. T.
Lee, ¡§Improve the extraction efficiency of the
AlGaInP-based LEDs by roughing the window layer¡¨,
International Conference on Optics and Photonics 188. Y. L. Chiou, N. T. Shiau, C. M. Lin, and C. T. Lee, ¡§Gate-recessed AlGaN/GaN MOS-HFETs Fabricated by using
photoelectrochemical method,¡¨ Optics and Photonics 189. H. Y. Lee, T. Y. Chen, and C. T.
Lee, ¡§Investigated the Performances of MgxZn1-xO:Al
Thin Films Contact with GaN and Al0.2Ga0.8N by Using RF Magnetron
Co-sputtering System¡§, International Conference on
Optics and Photonics 190. J. T. Yan, C. Y. Tseng, C. H. Chen, and C. T. Lee, ¡§Improved hydrogen detection sensitivity of a Pt/Ga2O3/GaN diode¡¨, The SPIE Photonics West "Gallium Nitride Materials and Devices IV" Conference in San Jose, United States, p. 7216-38, Jan. (2009). 191.Y. H. Lin, H. Y. Lee, and C. T. Lee, ¡§ZnO-based Transparent Thin-film Transistors with ZnO Buffer Layer¡¨ Asia-Pacific Workshop on Widegap Semiconductors, Zhang Jia Jie, Hunan, China, p. 568, (2009). 192. C. H. Chen, B. J. Li, L. R. Lou, and C. T. Lee, ¡§Ultraviolet Photodetectors of P-GaN/i-ZnO/n-ZnO:Al Using Vapor Cooling Condensation Technique¡¨ Asia-Pacific Workshop on Widegap Semiconductors, Zhang Jia Jie, Hunan, China, p. 580, (2009). 193. C. T. Lee, T. S.
Lin, J. T. Yan, and H. Y. Lee,¡¨N-ZnO nanorod/i-ZnO
nanorod/p-GaN heterostructured light-emitting diodes¡¨
Asia-Pacific Workshop on Widegap Semiconductors, Zhang 194. D. E. Lu, Y. L. Chiou, H. Y. Lee, and C. T. Lee, ¡¨Low frequency noise of chlorine-treated GaN/AlGaN MSM-photodetectors¡¨ Proc. 215th The Electrochemical Society Meeting, San Francisco, California, USA, p. 43, (2009). 195. L. H. Huang, N. T. Shiau, L. R. Lou, and C. T. Lee,¡¨ Improvement of low frequency noise of p-type GaN by surface chlorination treatment¡¨, Proc. 215th The Electrochemical Society Meeting, San Francisco, California, USA, p. 66, (2009). 196. Y. L. Chiou, L. H. Huang, L. R. Lou, and C. T. Lee,¡¨ Electrical performance of gate-recessed AlGaN/GaN MOS-HEMTs fabricated using photoelectrochemical method¡¨ Proc. 215th The Electrochemical Society Meeting, San Francisco, California, USA, p. 66, (2009). 197.
C. T. Lee, ¡§Surface plasma enhanced photoemission
from crystalline silicon quantum dots embedded in silicon nitride matrix¡¨, Proc. 10th Anniversary of France-Taiwan Scientific Prize, Invited paper 198. J. T. Yan, T. H. Lee and C. T. Lee, ¡§Investigation of Pt/Ga2O3/GaN hydrogen sensor diodes¡¨, Proc. 216th The Electrochemical Society Meeting, Vienna, Austria, p. 3120, (2009). 199. S. Dalui, C. C. Lin, H. Y. Lee, and C. T. Lee, ¡§Enhanced vertical emission from GaN based light emitting diode
with ZnO nanorod arrays produced by hydrothermal method¡¨, Proc. 216th The
Electrochemical Society Meeting, 200. S. L. Yeh, L. Z. Yu, L. R. Lou and C. T. Lee, ¡§Performance improvement of organic thin-film transistor using LiF
buffer layer in metalorganic interface¡¨, Proc. 216th The Electrochemical Society Meeting,
201. C. C. Lin, H. Y. Lee, and C. T. Lee, ¡§GaN-based resonant cavity light emitting diodes using dielectric distributed Bragg reflect | |