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李清庭 教授 |
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96學年度第一學期 · 電子學(Ⅰ) · 電子學實驗(Ⅰ) 96學年度第二學期(無開課) 97學年度第一學期 · 電子學(Ⅰ) · 電子學實驗(Ⅰ) 97學年度第二學期(無開課) 98學年度第一學期 · 電子學( I ) 98學年度第二學期 |
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· 美國 Carnegie Mellon University 電機博士（1982年） · 成功大學電機研究所碩士（1974年） · 成功大學電機系學士（1972年） |
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· 成功大學電機系教授兼院長（2003年至2009年） · 國立成功大學特聘教授 （2003年迄今） · 中華民國光學工程學會理事（2001年迄今） · 台灣電子材料與元件協會理事（1994年迄今） · 台灣電子材料與元件協會理事長（2005年至2006年） · IEEE/LEOS 台灣分會會長（2003年至2004年） · 中央大學光電研究所教授（1990年至2003年） · 中山科學研究院電子所副組長（1989年至1990年） · 中山科學研究院副研究員（1976年至1988年） |
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· 光電半導體元件與系統 · 高速電子元件與系統 · 奈米材料與元件 · 太陽能元件與系統 · 電磁感測光電元件 · 有機發光二極體及薄膜電晶體 |
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·
IEEE
FELLOW（2009） · 國科會傑出研究獎 (2002) · 國科會傑出研究獎 (1999) · 中國材料科學學會 材料科學傑出論文獎 (2007) · 台灣真空學會 真空科技傑出論文獎(2007) · 中華民國光學工程學會 台灣光電科技研討會傑出論文獎 (2006) · 台灣電子材料及元件學會 國際電子材料及元件會議論文獎 (2006) · 成功大學 特聘教授 (2004年迄今) · 中國電機工程學會 傑出電機工程獎 (2003) · 台灣電子元件協會 傑出服務獎章 (2002) · 光電工程學會 光學工程獎章 (2002) · 加拿大國家研究委員會(NRC)講座教授 (2002) · 台灣真空學會 真空科技傑出論文獎 (2001) · 台灣電子材料及元件學會 國際電子材料及元件會議傑出論文獎 (2000) · 中國工程師學會論文獎 (1999) · 光學及光子研討會論文獎 (1999) |
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· 2001 o 李清庭, 民國90年, “一種用於波導中之每一模態損失之非破壞性測量方法” 中華民國發明專利案號123585. o 李清庭, 民國90年,“化合物半導體裝置及其製作方法”,中華民國發明專利案號140784. o Ching-Ting Lee, 2001, “Nondestructive measurement method of individual modes loss for waveguides”, 美國專利 案號US6219475 B1. o Ching-Ting Lee, 2001, “Method for manufacture a compound semiconductor device”, 德國專利案號100 48 196.5. o Ching-Ting Lee, 2001, “Compound semiconductor devices and fabrication method”, 韓國專利案號2000-60963. · 2002 o Ching-Ting Lee, 2002, “Method for manufacturing III-nitride semiconductor devices”, 美國專利 案號US6486050. B1 · 2003 o Ching-Ting Lee, 2003, “Method for manufacturing a compound semiconductor device”, 美國專利 案號US6531383. B1 o Ching-Ting Lee, 2003,“III族-氮族半導體元件製造方法”, 中華民國發明專利案號177507. · 2004 o Ching-Ting Lee, 2004, “基于氮化鎵的III-V族化合物半導體裝置的製造方法”, 大陸專利案號00126376.5. · 2007 o Ching-Ting Lee, 2007, “Method for manufacturing III-nitride semiconductor devices”, 日本專利案號3905423. · 2008 o 劉代山、李清庭、吳俊慶、林俊興, 民國97年，“一種射頻共濺鍍方式沉積製造塑膠基板導電薄膜之裝置”， 中華民國發明專利案號 I 295325。 |
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A. Refereed Papers · 1995 o 01. J.W. Wu, C.Y. Chang, K.C. Lin, E.Y. Chang, J.S. Chen and C. T. Lee, "The Thermal Stability of Ohmic Contact to n-type InGaAs Layer", J. Electronic Materials, vol.24, pp.79-82 (1995) o 02. C. T. Lee, H.P. shiao and Y.C. Chou, "MESFET Performance and Limitations of Optimized GaAs Strained Buffer Layer Grown on InP by Molecular Beam Epitaxy", Solid State Electronics, vol.38, pp.1529-1531(1995) o 03. C.C. Chu, Y.J. Chan, R.H. Yuang, J.I. Chyi and C. T. Lee, "Performance Enhancement Using WSiX/ITO Electrodes in InGaAs/InAlAs MSM Photodetectors", Electron. Lett. vol.31, pp.1692-1694 (1995) o 04. C. T. Lee, C.D. Tsai, C.Y. Wang, H.P. Shiao, T.E. Nee and J.N. Shen, "Sidegating Effect Improvement of GaAs Metal-Semiconductor Field Effect Transistor by Multiquantum Barrier Structure", Appl. Phys. Lett. vol.67, pp.2046-2048 (1995) o 05. H.P. Shiao, C.Y. Wang, Y.K. Tu, W. Lin and C. T. Lee, "InGaP/GaAs Multiquantum Barrier Structures Prepared by Low-Pressure Organometallic Vapor Phase Epitaxy", Solid State Electronics, vol.38, pp.2001-2004 (1995) o · 1996 o 06. J.D. Guo, C.I. Lin, M.S. Feng, F.M. Pan, G.C. Chi and C. T. Lee, "A Bilayer Ti/Ag Ohmic Contact for Highly Doped n-type GaN Films", Appl. Phys. Lett. vol.68, pp.235-237 (1996) o 07. C.Y. Wang, Z.M. Chung, W. Lin, Y.K. Tu and C. T. Lee, "Low Chirp and High Power 1.55 μm Strained-Quantum-Well Complex-Coupled DFB Laser", IEEE Photon. Technol. Lett. vol.8, pp.331-333 (1996) o 08. C. T. Lee, P.L. Fan and J.C. Lee "Design of the Spot Size for Single Mode Ti/Mg:LiNbO3 Channel Waveguide for Optimum Coupling with Fiber", Fiber and Integrated Optics, vol.15, pp.149-158 (1996) o 09. Y.L. Lai, E.Y. Chang, C.Y. Chang, T.K. Chen, T.H. Liu, S.P. Wang, T.H. Chen and C. T. Lee, " 5mm High-Power-Density Dual-Delta-Doped Power HEMTS for 3V L-Band Applications", IEEE Electron Device Lett., vol.17, pp.229-231 (1996) o 10. C. T. Lee, H.C. Lee, H.H. Lai and L.G. Sheu "Complementary Optical Bistable Operation with Integration of Two Directional Couplers on LiNbO3 Crystal", Jpn. J. Appl. Phys., vol.35, pp.2686-2689 (1996) o 11. C. T. Lee, J.H. Yeh and Y.T. Lyu "Characterization of Nd Doped AlGaAs Grown by Liquid Phase Epitaxy", J. Crystal Growth, vol.163, pp.343-347 (1996) o 12. L.G. Sheu, C. T. Lee, and H. C. Lee, "Nondestructive Measurement of Loss Performance in Channel Waveguide Devices with Phase Modulator", Opt. Rev., vol.3, pp.192-196 (1996) o 13. C. T. Lee, P.L. Fan, J.C. Lee and T.T. Kuo, "A Novel Power Divider with Arbitrary Power Division and High Coupling Efficiency with Single Mode Fiber", Opt. and Quantum Electronics, vol.28, pp.1417-1425 (1996) o 14. C. T. Lee, H.C. Lee and L.G. Sheu, "The Reduction of Harmonic and Intermodulation Distortions with a Cascaded Mach-Zehnder Modulator", Opt. Rev. Vol.3, pp.341-344 (1996) o 15. C. T. Lee, and L.G. Sheu, "Analysis of Nd:MgO:Ti:LiNbO3 Waveguide Laser with Nonuniform Concentration Distributions", IEEE J. Lightwave Technol., vol.14, pp.2268-2276 (1996) o 16. M.L. Wu, P.L. Fan, J.M. Hsu and C. T. Lee, "Design of Ideal Structures for Lossless Bends in Optical Waveguides by Conformal Mapping", IEEE J. Lightwave Technol., vol.14, pp.2604-2614 (1996) o 17. C. T. Lee, C.Y. Wang and Y.C. Chou, "Characterization of GaAs Buffer Layer Function in GaAs/InP Strained Structure Grown by MBE", Thin Solid Films, vol.286, pp.107-110 (1996) o · 1997 o 18. C. T. Lee, H.P. shiao, N.T. Yeh, C.D. Tsai, Y.T. Lyu and Y.K. Tu, "Thermal Reliability and Characterization of InGaP Schottky Contact with Ti/Pt/Au Metals", Solid State Electronics, vol.41, pp.1-5 (1997) o 19. J.M. Hsu, M.L. Wu and C. T. Lee, "Hybrid Approach for Quasistatic Analysis of Shield Strip Lines", Microwave and Optical Technology Letters, vol.14, pp111-115 (1997) o 20. M.L. Wu, P.L. Fan and C. T. Lee, "Completely Adiabatic S-Shaped Bent Tapers in Optical Waveguides", IEEE Photon. Technol. Lett., vol.9, pp.212-214 (1997) o 21. C. T. Lee, M.L. Wu, L.G. sheu, P.L. Fan and J.M. Hsu, "Design and Analysis of Completely Adiabatic Tapered Waveguides by Conformal Mapping", IEEE J. Lightwave Technol., vol.15, pp.403-410 (1997) o 22. C. T. Lee, M.Y. Yeh, C.D. Tsai and Y.T. Lyu, "Low Resistance Bilayer Nd/Al Ohmic Contacts on n-type GaN", J. Electronic Materials, vol.26, pp.262-265 (1997) o 23. H.Y. Wang and C. T. Lee, "Novel Immittance Function Simulator Using a Single Current Conveyor", Electron. Lett. vol.33, pp.574-576 (1997) o 24. C.Y. Wang, Z.M. Chuang, H.H. Liao, Y.K. Tu and C. T. Lee, "Resistance to External Optical Feedback of Low-Chirp Strained-Quantum-Well Complex-Coupled Distributed-Feedback Laser", Jpn. J. Appl. Phys., pt.1, vol.36, pp.2685-2688 (1997) o 25. C.D. Tsai, H.P. Shiao, C. T. Lee, and Y.K. Tu "High Performances and Reliability of Novel GaAs MSM Photodetectors with InGaP Buffer and Capping Layers", IEEE Photon. Technol. Lett., vol.9, pp.660-662 (1997) o 26. P.L. Fan, M.L. Wu and C. T. Lee, "Analysis of Abrupt Bent Waveguides by the Beam Propagation Method and the Conformal Mapping Method", IEEE J. Lightware Technol., vol.15, pp.1026-1031 (1997) o 27. C. T. Lee, and M.L. Wu, "Combination of Conformal Mapping and Finite Difference Methods for Analysis of Supported Coplanar Waveguides", Microwave and Optical Technology Letters, vol.15, pp.273-277 (1997) o 28. Y.L. Lai, E.Y. Chang, C.Y. Chang, M.C. Tai, T.H. Liu, S.P. Wang, K.C. Chung, and C. T. Lee, "High-Efficiency and Low-Distortion Directly-Ion-Implanted GaAs Power MESFET's for Digital Personal Handy-Phone Applications", IEEE Electron Device Lett., vol.18 pp.429-431 (1997) o 29. M.L. Wu and C. T. Lee, "Quasi-Static Analysis of Arbitrary Coplanar Waveguide Structures by Combination of Conformal Mapping and Finite Difference Method", Microwave and Optical Technology Letter, vol.16, pp.149-154 (1997) o 30. C. T. Lee, M.H. Lan and C.D. Tsai, "Improved Performances of InGaP Schottky Contact with Ti/Pt/Au Metals and MSM Photodetectors by (NH4)2Sx Treatment", Solid State Electronics, vol.41, pp.1715-1719 (1997) o 31. C. T. Lee, and P.L. Fan, "Beam Propagation Analysis of Fast Mode-Conversion Evaluation Bent Waveguides with Apexes-Linked Microprisms", IEEE Microwave and Guided Wave Lett., vol.7, pp.338-340 (1997) o 32. C. T. Lee, M.L. Wu, and J.M. Hsu "Beam Propagation Analysis for Tapered Waveguides : Taking Account of Curve Phase-Front Effect in Paraxial Approximation", IEEE J. Lightwave Technol., vol.15, pp.2183-2189 (1997) o 33. J.I. Chyi, T.E. Nee, C.T. Lee, J.L. Shieh and J.W. Pan, "Formation of Self-Organized In0.5Ga0.5As Quantum Dots on GaAs by Molecular Beam Epitaxy", J. Crystal Growth, Vol.175, pp.777-781 (1997) o 34. C. T. Lee and L.G. Sheu, "Analysis of End-Pumped Nd:Ti:LiNbO3 Microchip Waveguide Fabry-Perot Lasers", IEEE J. Lightwave Technol., vol.15, pp.2147-2153 (1997) o 35. C.Y. Wang, H.P. Shiao, Z.M. Chuang, H.H. Liao and C.T. Lee, "Wide Temperature Range Operation of 1.55um Current Blocking Grating Complex-Coupled DFB Laser", Electron. Lett. Vol.33, pp.1712-1713 (1997) o 36. C.T. Lee and T.E. Nee, "Electroabsorption of Unstrained InGaAs/InAlGaAs Multiple Quantum Well Structure Grown on GaAs Substrate", Int. J. of High-Speed Electronics and Systems, Vol.34, pp.673-679(1997) o 37. L.W. Chang, C.T. Lee and P.Y. Chien "Absolute Displacement Measurement by Using the Synthesized Modulation Index of a Frequency-Modulated Interferometer", Review of Scientific Instruments, Vol. 68, pp.3085-3087 (1997) o · 1998 o
38.
C. T. Lee, and J.M. Hsu, "Systematic Design of Full Phase
Compensation Microprism-Type Low-Loss Bent Waveguide", Appl. Opt.,
Vol.37, pp.507-509(1998) o
39.
L.W. Chang, C.T. Lee and P.Y. Chien, "Optical Interferometric
Signal Generator Based on Electrical-Locked Loop Technique",
Review of Scientific Instruments, Vol. 69, pp.1246-1252 (1998) o
40.
H.Y. Wang and C.T. Lee, "Realisation of R-L and C-D Immittance Using
Single FTFN" Electron. Lett., Vol.34, pp.502-503(1998) o
o
42.
J.M. Hsu and C.T. Lee, "Systematic Design of Novel Wide-Angle
Low-Loss Symmetric Y-Junction Waveguides", IEEE J. Quantum Electron,
Vol.34, pp.673-679 (1998) o
43.
C.T. Lee, L.W. Chang and P.Y. Chien, "Intermetric Fiber Sensors
Based on Triangular Phase Modulator", J. Chinese Institute of Engineers,
Vol.21, pp.305-315 (1998) o
44.
C.T. Lee, and M.L. Wu, "Microprism for Wide-Angle Low Loss
Y-Junction Waveguide", Fiber and Integrated Optics, Vol. 17, pp.213-219
(1998) o
45.
C.T. Lee and J.M. Hsu, "Systematic Design of Microprism-Type
Low-Loss Step-Index Bent Waveguides", Appl. Opt. Vol. 37,
pp.3948-3953(1998) o
46.
C.T. Lee, K.L. Jaw and C.D. Tsai, "Thermal Stability of Ti/Pt/Au
Ohmic Contacts on InAs/Graded InGaAs Layers", Solid State
Electronics Vol. 42, pp.871-875(1998) o
47.
C.T. Lee and L.G. Sheu, "Analysis of End-Pumped and
Electrooptically Tuned Nd:Ti:MgO:LiNbO3 Microchip Waveguide
Lasers", IEEE J. Lightwave Technol., Vol.16, pp.1315-1322(1998) o
48.
T.E. Nee, N.T. Yeh, J.I. Chyi and C.T. Lee, "Matrix-Dependent
Structural and Photoluminescence Properties of In0.5Ga0.5As
Quantum Dots Grown by Molecular Beam Epitaxy", Solid State Electronics
Vol. 42, pp.1331-1334(1998) o
49.
L.W. Chang, C.T. Lee and P.Y. Chien, "Displacement Measurement by
Synthesized Light Source Based on Fiber Bragg Grating", Opt. Commun.
Vol.154, pp.261-267 (1998) o
50.
H.Y. Wang and C.T. Lee, "Cascadable Current-Mode Filters Using
Single FTFN", Electronics Letter,Vol. 34, p.1801 (1998) o
51.
H.H. Lu and C.T. Lee, "Directly Modulated CATV Transmission
Systems Using Half-Split-Band and Wave length Division Multiplexing
Techniques", IEEE Photon. Technol. Lett., Vol.10, pp.1653-1655 (1998) o
52.
C.T. Lee, C.H. Fu, C.D. Tsai and W. Lin, "Performance
Characterization of InGaP Schottky Contact with ITO Transparent Electrodes",
J. Electronic Materials, vol.27, pp.1017-1021 (1998) o
53.
C.T. Lee, C.T. Huang and J.Y. Chen, "Effect of SiOx
Buffer Layer on Propagation Loss in LiNbO3 Channel
Waveguides", J. Appl. Phys. Vol.84, pp.1204-1209(1998) o
54.
C.T. Lee, "Nondestructive Measurement of Separated Propagation
Loss for Multimode Waveguides", Appl. Phys. Lett. Vol. 73, pp.133-135
(1998) o
55.
C.T. Lee, "Optically Induced Sidegating Current Isolation of GaAs
MESFET by Multiquantum Barrier", IEEE Trans. Electron Devices Vol.45, pp.2083-2085(1998) o 56. C.T. Lee, L.W. Chang and P.Y. Chien, "Frequency Multiplier Using Cascade Integrated-Optic Phase Modulators Based on Sagnac Interferometer", Opt. Commun. Vol.158, pp.181-188 (1998) o · 1999 o
57.
C.D. Tsai, C.H. Fu, Y.J. Lin and C.T. Lee, "Study of
InGaP/GaAs/InGaP MSM Photodetectors Using Indium-Tin-Oxide as Transparent and
Antireflection Schottky Electrode", Solid State Electronics Vol.43,
pp.665-670( (1999) o
58.
N.T. Yeh, T.E. Nee, P.W. Shiao, M.N. Chang, J.I. Chyi and C.T. Lee,
"Photoluminescence Characteristics of Self-Assembled In0.5Ga0.5As
Quantum Dots on Vicinal GaAs Substrates", Jpn. J. Appl. Phys. Vol.38
pp.550-553 (1999) o
59.
T.E. Nee, N.T. Yeh, P.W. Shiao, J.I. Chyi and C.T. Lee,
"Room-Temperature Operation of In0.5Ga0.5As Quantum
Dot Lasers Grown on Misoriented GaAs Substrates by Molecular Beam
Epitaxy", Jpn. J. Appl. Phys. Vol.38, pp.605-607 (1999) o
60.
L.W. Chang, P.Y. Chien and C.T. Lee, "Measurement of Absolute
Displacement by a Double-Modulation Technique Based on a Michelson
Interferometer", Appl. Opt. Vol.38, pp.2843-2847(1999) o
61.
J.M. Hsu and C.T. Lee, "Design of Microprism-type Symmetric
Y-Junction Waveguides Using Full-Phase Compensation Method", Appl. Opt.
Vol.38, pp.3234-3238(1999). o
62.
H.H. Lu and C.T. Lee, "Composite Second Order and Composite
Triple Beat Performance for Cascaded Fiber Optic CATV Transmitters",
Fiber and Integrated Optics Vol.18, pp.131-140 (1999) o
63.
T.E. Nee, N.T. Yeh, J.M. Lee, J.I. Chyi and C.T. Lee, "High
Characteristic Temperature Be-Doped In0.5Ga0.5As
Quantum Dot Lasers Grown on GaAs Substrates by Molecular Beam
Epitaxy", J. Crystal Growth Vol.201, pp.905-908 (1999) o
64.
C.T. Lee, L.G. Sheu and F.T. Hwang, "Analysis and Modeling of
Nd:Ti:LiNbO3 Fabry-Perot Channel Waveguide Lasers", J.
Appl. Phys. Vol.86, pp.1191-1195 (1999) o 65. H.Y. Wang and C.T. Lee, “Using Nullors for the Realisation of Current-Mode FTFN-Based Inverse Filters”, Electron Lett., Vol.35, pp.1889-1890 (1999) o · 2000 o
66.
H.Y. Wang and C.T. Lee, “Systematic Synthesis
of R-L and C-D Immittance Using Single CCⅢ”,
Int. J. Electron., Vol. 87, pp.293-301 (2000) o
67.
Y.T.Lyu, K.L. Jaw, C.T. Lee, C.D. Tsai, Y.J. Lin and Y.T. Cherng,
"Ohmic Performance Comparison for Ti/Ni/Au and Ti/Pt/Au on InAs/Graded
InGaAs/GaAs Layers", Materials Chemistry and Physics Vol.63,
pp.122-126(2000) o
68.
C.T. Lee, C.D. Tsai and H.P. Shiao, "High Performance of Schottky
Barriers for Cu Contacted with InGaP/GaAs Layers", Optical
Materials Vol.14, pp.251-253(2000) o
69.
C.T. Lee, K.C. Shyu, I.J. Lin and H.H. Lin, “GaAs Metal-Semiconductor Field
Effect Transistor with InGaP/GaAs Multiquantum Barrier Buffer Layer”, Material Science and
Engineering B Vol.74, pp.147-151 (2000) o
70.
Y.T. Lyu, Y.R. Liu, D.S. Liu and C.T. Lee, “Contributions of Ion-Induced Damage
Restoration and Removal in GaN Light Emitting Diodes “J. Chinese Institute of
Electrical Engineering Vol.7, pp.173-180(2000) o
71.
C.T. Lee, J.H. Huang and C.D. Tsai, "Nonalloyed GaAs
Metal-Semiconductor Field Effect Transistor", Solid State
Electronics Vol.44, pp.143-146(2000) o
72.
C.D. Tsai and C.T. Lee, "Passivation Mechanism Analysis of
Sulfur-Passivated InGaP Surfaces", J. Appl. Phys. Vol.87, pp.4230-4233
(2000) o
73.
M.S. Doong, D.S. Liu and C.T. Lee, "Monolithic Photoreceiver
Constructed with InGaP/GaAs/InGaP MSM Photodetectors and Conventional GaAs
MESFETS", o
74.
C.T. Lee, and H.W. Kao, "Long Term Thermal Stability of
Ti/Al/Pt/Au Ohmic Contacts to n-type GaN", Appl. Phys. Lett. Vol.24,
pp.2364-2366 (2000) o
75.
H.H. Lu and C.T. Lee, "Novel Measurement Method for Fiber Optical
CATV Echo Rating Baseband Parameter at Subscriber", Opt. o
76.
H.S. Tsai, G.J. Jaw, S.H. Chang, C.C. Cheng, C.T. Lee and H.P. Liu, “Laser-Assisted Plasma-Enhanced
Chemical Vapor Deposition of Silicon Nitride Thin Film”, Surface and Coatings
Technology Vol.132, pp.158-162 (2000) o
77.
Y.J. Lin, C.D. Tsai, Y.T. Lyu and C.T. Lee, “X-ray Photoelectron
Spectroscopy Study of (NH4)2 Sx-treated
Mg-doped GaN Layers”, Appl. Phys. Lett.,
Vol.77, pp.687-689(2000) o 78. Y.J. Lin and C.T. Lee, “Investigation of Surface Treatments for Nonalloyed Ohmic Contact Formation in Ti/Al Contacts to N-Type GaN”, Appl. Phys. Lett., Vol.77, 3986-3988 (2000) o · 2001 o
79.
C.D. Tsai and C.T. Lee, “Thermal
Reliability and Performances of InGaP Schottky Contact with Cu/Au and
Au/Cu-MSM Photodetectors”, J. Electron.,
Mater. Vol.30, p.59-64 (2001) o
80.
H.H. Lu, C.T. Kuo and C.T. Lee, "Long-Distance Transmission of
Directly Modulated 1550mn AM-VSB CATV Systems", Fiber and
Integrated Optics Vol.20, pp.279-285 (2001) o
81.
C.T. Lee, Q.X. Yu, B.T. Tang and H.Y. Lee, “Effects of Plasma Treatment on
the Electrical and Optical Properties of Indium Tin Oxide Films Fabricated by
Reactive Sputtering”, Thin Solid Films
Vol.386, pp.105-110 (2001) o
82.
C.T. Lee, H.W. Kao and F.T. Hwang, “Effect
of Pt Barrier on Thermal Stability of Ti/Al/Pt/Au in Ohmic Contact with
Si-Implanted N-Type GaN Layers”, J. Electron Mater
Vol.30, pp861-865 (2001) o
83.
J.M. Hsu and C.T. Lee, "Performance Tolerance in Microprism-Type
Bent Waveguides", Microwave and Optical Technology Letters, Vol.29,
pp.328-332 (2001) o
84.
H.H. Lu, C.T. Lee and N.C. Wang, "Dispersion Compensation in
Externally Modulated Transmission Systems Using Half-Split-Band Technique and
Chirped Fiber Grating", J. Opt. Commun. Vol.22, pp.110-113 (2001) o
85.
H.H. Lu, C.T. Lee and C. Lin, "A Hybrid DWDM System for CATV and
Multimedia Trunking", J. Opt. Commun. Vol. 22, pp.114-118 (2001) o
86.
H.S. Tsai, H.C. Chiu, S.H. Chang, C.C. Cheng,, C.T. Lee and H.P. Liu,
"CO2 Laser Assisted Plasma-Enhanced Chemical Vapor Deposition
of Silicon Dioxide Thin Film", Jpn. J. Appl. Phys. Vol.40, pp.3093-3095
(2001) o
87.
B.T. Tang, Q.X. Yu, H.Y. Lee and, C.T. Lee, "Ohmic Performance of
ZnO and ITO/ZnO Contacted with N-Type GaN Layer", Material Science
and Engineering B Vol.82, pp.259-261 (2001) o
88.
C.T. Lee, and M.L. Wu, “ o
89.
H.Y. Wang and C.T. Lee, "Versatile Insensitive Current-Mode
Universal Biquad Implementation Using Current Conveyors", IEEE Trans.
Circuits and Systems, Part II Vol.48, pp.409-413 (2001) o
90.
H.H. Lu, C.T. Lee and C.J. Wang, "Dispersion Compensation in
Externally Modulated Transmission Systems Using Chirped Fiber Grating as well
as Large Effective Area Fiber", Opt. Eng. Vol.40, pp.656-657
(2001) o
91.
Y.J. Lin and C.T. Lee, “Surface Analysis of
(NH4)2Sx-treated InGaN Using X-ray
Photoelectron Spectroscopy”, J. Vacuum Science
and Technology Vol.B19, pp.1734-1738 (2001) o
92.
Y.J. Lin, H.Y. Lee, F.T. Hwang and C.T. Lee, "Low Resistive Ohmic
Contact Formation of Surface Treated N-GaN Alloyed at Low Temperature",
J. Electron. Mater., Vol.30, pp532-537 (2001) o
93.
C.T. Lee, Q.X. Yu, B.T. Tang, H.Y. Lee and F.T. Hwang, “Investigation of Indium Tin
Oxide/Zine Oxide Multilayer Ohmic Contacts to N-Type GaN Isotype Conjunction”, Appl. Phys. Lett. Vol.78,
pp.3412-3414 (2001) o
94.
H.H. Lu, H.L. Ma and C.T. Lee, “A
Bi-directional Hybrid DWDM System for CATV and OC-48 Trunhing”, IEEE Photon Technol. Lett.
Vol.13, pp.902-904 (2001) o
95.
C.T. Lee, and H.Y. Wang, “Minimum
Realization for FTFN-Based SRCO”,
Electron. Lett.Vol.37, pp.1207-1208 (2001) o
96.
H.P. Shiao, H.Y. Lee Y.J. Lin, Y.K. Tu and C.T. Lee, “Growth and Performance Study of
Aluminum-Free InGaAs/GaAs/InGaAsP Pump Lasers”,
Jpn. J. Appl. Phys. Vol.40, pp.6384-6390 (2001) o
97.
C.T. Lee, Y.J. Lin and D.S. Liu, “Schottky
Barrier Height and Surface State Density of Ni/Au Contacts to (NH4)2Sx-treated
N-Type GaN”, Appl. Phys. Lett.
Vol.79, pp.2573-2575 (2001) o 98. C.S. Lee, Y.J. Lin and C.T. Lee, “Investigation of Oxidation Mechanism for Ohmic Formation in Ni/Au Contacts to P-Type GaN Layers”, Appl. Phys. Lett. Vol.79, pp.3815-3817 (2001) · 2002 o
99.
H.H. Lu, H.L. Ma and C.T. Lee, “Bidirectional
Transport of AM-VSB CATV System”,
J. Opt. Commun. Vol. 23, pp. 22-25 (2002) o
100.
Y.T. Lyu, C.T. Lee, G.J. Horng, C.Ho, C.Y. Lee and C.S. Wu, “Film Thickness Dependence on
Electrical and Optical Properties of PtSi/P-Si(100) Schottky Barrier Detector“, Mater. Chemi. and Phy. Vol.
74, pp. 177-181 (2002) o
101.
C.T. Lee, N.C. Wang and H.H. Lu, “Lon-Distance
Transmission of AM-VSB CATV Systems Using Fabry-Perot Laser Diode and Fiber
Bragg Grating”, Fiber and
Integrated Optics Vol. 21, pp. 43-54 (2002) o
102.
C.T. Lee, C.T. Kuo and H.H. Lu, “Dispersion
Compensation in Externally Modulated Transmission System Using Chirped Fiber
Grating”, Fiber and Integrated
Optics, Vol. 21, pp. 269-276 (2002) o
103.
D.S. Liu and C.T. Lee, “Investigation of the
Thermal Degradation Mechanism for Cu/Au Schottky Contacts to the InGaP Layer”, J. Appl. Phys. Vol.91,
pp.1349-1353 (2002) o
104.
H.Y. Lee, I.J. Lin, H.M. Shieh and C.T. Lee, “Investigation of double-delta –doped InAlGaP/GaAs/InGaAs field
effect transistors” Solid State
Electron., Vol. 46, pp. 1075-1078 (2002) o
105.
C.Y. Lo, C.L. Hsu, Q.X. Yu, H.Y. Lee and C.T. Lee, “Investigation of Transparent
and Conductive Undoped Zn o
106.
H.H. Lu, C.S. Lee, H.L. Ma and C.T. Lee, “Up-Stream Noise for the
Internet Access Over Fiber Optical CATV Systems”,
J. Opt. Commun., Vol. 23,pp. 111-114 (2002). o
107.
D.S. Liu and C.T. Lee, “Microstructure
Evolution and Failure Mechanism for Cu/Au Schottky Contacts to InGaP Layer”, J. Appl. Phys, Vol. 92,
pp.987-991 (2002) o
108.
H. H. Lu, H. L. Ma, C. S. Lee and C. T. Lee, “A DWDM System for 256-QAM
Transmission over o
109.
C. T. Lee, H. Y. Lee and H. H. Lin, “Novel
GaAs MESFET’s with InGaP/GaAs
Multiple Quantum Barrier Capping and Buffer Layers”, Jpn. J. Appl. Phys., Vol. 41,
pp. 5937-5940 (2002). o
110.
C. T. Lee, Y. J. Lin and C. H. Lin, “Nonalloyed
Ohmic Mechanism of TiN Interfacial Layer in Ti/Al Contacts to (NH4)2Sx-treated
n-type GaN Layers”, J. Appl. Phys.,
Vol. 92, pp. 3825-3829 (2002). o 111. J. K. Sheu, M. L. Lee, L. S. Yeh, C. J. Kao, C. J. Tun, M. G. Chen, G. C. Chi, S. J. Chang, Y. K. Su and C. T. Lee, “Planar GaN n+-p Photodectors Formed by Si Implantation into p-GaN”, Appl. Phys. Lett., Vol. 81, pp. 4263-4265 (2002). o · 2003 o
112.
C.S. Lee, H.Y. Wang and C.T. Lee, “The
Adjoint Realization of Multiple Input/Output Fibers”, J. Chinese Institute of
Electrical Engineering, Vol. 10, pp.183-188 (2003). o
113.
H. Y. Lee and C. T. Lee, “The
Investigation for Various Treatments of InAlGaP Schottky Diodes”, Opt. Mater., Vol. 23, pp.
99-102 (2003). o
114.
H. Y. Lee and C. T. Lee, “Investigation
of Degradation Mechanism of Schottky Diodes”,
Solid State Electron, Vol.47, pp.831-834 (2003). o
115.
C. T. Lee, Y. J. Lin and T. H. Lee, “Mechanism
investigation of NiOx in Au/Ni/p-type GaN ohmic contacts annealed
in air”, J. Electron.
Mater., Vol. 32, pp. 341-345 (2003). o
116.
Y. J. Lin, C. S. Lee and C. T. Lee, “Investigation
of Accumulated Carrier Mechanism on Sulfurated GaN Layers”, J. Appl. Phys., Vol. 93, pp.
5321-5324 (2003). o
117.
C. T. Lee, H. Y. Lee and H. W. Chen, “
GaN Metal-Oxide-Semiconductor Device Using SiO2/Ga2O3
Insulator Grown by Photoelectrochemical Oxidation Method”, IEEE Electron Device Lett.,
Vol. 24, pp. 54-56 (2003). o
118.
Y. J. Lin, Z. D. Li, C. W. Hsu, F. T. Chien, C. T. Lee, S. T. Shao and
H. C. Chang, “Investigation of
Degradation for Ohmic Performance of Oxidized Au/Ni/Mg-doped GaN”, Appl. Phys. Lett., Vol. 82,
pp. 2817-2819 (2003). o
119.
T. S. Cheng, H. Y. Lee, C. T. Lee, H. Chen and H. T. Lin, “Prepared an Acrylic-Ester
Copolymer as an Ultra Thick Negative Photo Resist”, Accepted to be published in
Materials Lett. (2003). o
120.
C. T. Lee, H. W. Chen and H. Y. Lee, “Metal-Oxide-Semiconductor
Devices Using Ga2O3 Dielectrics on n-type GaN”, Appl. Phys. Lett., Vol. 82,
pp. 4304-4306 (2003). o
121.
C. T. Lee and H. Y. Lee, “Metal-Semiconductor-Metal
Photodetectors with InAlGaP Capping and Buffer Layers”, IEEE Electron Device Lett.,
Vol. 24, pp.532-534 (2003). o 122. Q. X. Yu, B. Xu, Q. H. Wu, Y. Liao, G. Z. Wang, R. C. Fang, H. Y. Lee, and C. T. Lee, “Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode”, Appl. Phys. Lett., Vol. 83, pp. 4713-4715 (2003). o 123. D. S. Liu, C. T. Lee and C. W. Wang, “Properties of Cu/Au Schottky contacts on InGaP layer”, J. Appl. Phys., vol. 94, pp. 3805-3809 (2003). o · 2004 o 124. C. T. Lee, D. S. Liu and R. W. Deng, “ Diffusion Barrier of Sputtered W film for Cu Schottky Contacts on InGaP Layer”, Thin Solid Films, vol. 468, pp. 216-221 (2004). o 125. Y. P. Hsu, S. J. Chang, Y. K. Su, J. K. Sheu, C. T. Lee, T. C. Wen, L. W. Wu, C. H. Kuo, C. S. Chang and S. C. Shei, “Lateral Epitaxial Patterned Sapphire InGaN/GaN MQW LEDs”, J. Crystal Growth, Vol. 261, pp. 466-470 (2004). o 126. Y. J. Lin, W. F. Liu and C. T. Lee, “Excimer-laser-induced activation of Mg-doped GaN layers”, Appl. Phys. Lett., vol. 84, pp. 2515-2517 (2004). o 127. T.H. Lee, K.H. Tu and C.T. Lee, “Novel structure of arrayed-waveguide grating multiplexer with flat spectral response”, Microwave and Opt. Technol. Lett. vol. 41, pp. 444-445 (2004). o 128. C.S. Chang, S. J. Chang, Y. K. Su, C. T. Lee, Y. C. Lin, W. C. Lai, S. C. Shei, J. C. Ke, and H. M. Lo, “Nitride-based LEDs with textured side walls”, IEEE Photon Technol. Lett. vol. 16, pp. 750-752 (2004). o 129. C. T. Lee and C. H. Lin, “Si nanocrystals embedded in Si suboxide matrix grown by laser-assisted chemical vapor deposition at room temperature”, Jpn. J. Appl. Phys., vol. 43, pp. 2793-2794 (2004). o 130. H. Y. Wang, C. T. Lee, C. Y. Huang, “Novel CFA-based Negative Immittance Simulator”, International J. Electrical Engineering, vol. 11, pp.393-398 (2004). o 131. S. J. Chang, L. W. Wu, Y. K. Su, Y. P. Hsu, W. C. Lai, J. M. Tsai, J. K. Sheu and C. T. Lee, “Nitride-based LEDs with 800oC grown P-AlInGaN-GaN double cap layers”, IEEE Photon Technol. Lett., vol. 16, pp. 1447-1449 (2004). o 132. T. C. Wen, S. J. Chang, C. T. Lee, W. C. Lai, J. K. Sheu, “Nitride-based LEDs with modulation-doped Al0.12Ga0.88N-GaN superlattice structures”, IEEE Trans. Electron Devices, vol.51, pp. 1743-1746 (2004). o 133. Y. K. Su, H. C. Yu, S. J. Chang, C. T. Lee, J. S. Wang, A. R. Kovsh, Y. T. Wu, K. F. Lin, C. Y. Huang, “1.3mm InAs quantum dot resonant cavity light emitting diodes”, Materias Science Engineering B, vol. 110, pp. 256-259 (2004). o · 2005 o 134. C. T. Lee and H. Y. Lee, “Surface Passivated Function of GaAs MSM-PDs Using Photoelectrochemical Oxidation Method”, IEEE Photon. Technol. Lett., vol. 17, pp. 462-464 o 135. C. T. Lee, H. W. Chen, F. T. Hwang, and H. Y. Lee, “Investigation of Ga Oxide films grown on n-type GaN by photoelectrochemical oxidation using He-Cd laser”, J. Electron. Mater., vol. 34, pp.282-286 (2005). o 136. Y. K. Su, P. C. Chang, C. H. Chen, S. J. Chang, C. L. Yu, C. T. Lee, H. Y. Lee, J. Gong, P.C. Chen, C. H. Wang, “Nitride-based MSM UV photodetectors with photo-chemical annealing Schottky contacts” , Solid-State Electron., vol. 49, pp. 459-463 (2005) o 137. S. C. Chung, Y. C. Lin, W. T. Lin, J. R. Gong, C. T. Lee, “Effects of Oxided Cu and Co Layers on the Formation of Au Ohmic Contacts to p-GaN”, J. Electrochem. Soc., vol. 152, pp. G367-G371 (2005). o 138. S. C. Chung, Y. C. Lin, W. T. Lin, J. R. Gong, C. T. Lee, “Effects of Oxided Cu and Co Layers on the Formation of Au Ohmic Contacts to p-GaN”, J. Electrochem. Soc., vol. 152, pp. G367-G371 (2005). o 139. H. Y. Wang, C. T. Lee, and C. Y Huang, “Characteristic Investigation of New Pathological Elements”, Analog Integrated Circuits and Signal Processing, vol. 44, pp. 95-102 (2005). o 140. S. J. Chang, C. S. Chang, Y. K. Su, C. T. Lee, W. S. Chen, C. F. Shen, Y. P. Hsu, S. C. Shei, and H. M. Lo, “Nitride-Based Flip-Chip ITO LED”, IEEE Trans. Advanced Packaging, vol.28, pp. 273-277 (2005). o 141. D. S. Liu, C. C. Wu and C. T. Lee, “A Transparent and Conductive Film Prepared by RF Magnetron Cosputtering System at Room Temperature”, Jpn. J. Appl. Phys., vol. 44, pp. 5119-5121, 2005. o 142. S. W. Chang, E. Y. Chang, C. S. Lee, K. S. Chen, C. W. Tseng, Y. Y. Tu, C, T. Lee, “A gold-free fully copper-metallized InP heterojunction bipolar transistor using non-alloyed ohmic contact and platinum diffusion barrier”, Jpn. J. Appl. Phys., vol. 44, pp. L899-L900 2005. o · 2006 o 143. D. S. Liu, Y. K. Liao, C. Y. Wu, F. S. Juang, C. T. Lee, “A silicon oxide hard coating deposited on flexible substrate by TMS-PECVD system ”, Mater. Science Forum, vol. 505-507, pp. 439-444 (2006). o 144. Y. J. Lin, W. X. Lin, C. T. Lee, F. T. Chien, “Changes in optical and electrical properties and surface recombination velocity of n-type GaN due to (NH4)2Sx treatment”, Solid State Comm., vol. 137, pp. 257-259 (2006). o 145. Y. C. Hsieh, E. Y. Chang, S. S. Yeh, C. W. Chang, G. L. Luo, C. Y. Chang, C. T. Lee, “Optimization of the growth of the InGaP etch-stop layer by MOVPE for InGaP/GaAs HBT device application“, J. Crystal Growth, vol. 289, pp. 96-101 (2006). o 146. Y. J. Lin, W. X. Lin, C. T. Lee, and H. C. Chang, “Electronic Transport and Schottky Barrier Heights of Ni/Au Contacts on n-Type GaN Surface with and without a Thin Native Oxide layer”, Jpn. J. Appl. Phys., vol. 45, pp. 2505-2508 (2006). o 147. Y. J. Lin, C. T. Lee and H. C. Chang, “Changes in activation energies of donors and carrier concentration in Si-doped n-type GaN due to (NH4)2Sx treatment”, Semicon. Science Technol., vol. 21, pp. 1167-1171 (2006). o 148. C. S. Lee, Y. C. Lien, E. Y. Chang, H. C. Chang, S. H. Chen, C. T. Lee, L. H. Chu, S. W. Chang, Y. C. Hsieh, “Copper-airbridged low-noise GaAs PHEMT with Ti/WNx/Ti diffusion barrier for high-frequency applications”, IEEE Trans. Electron Devices, vol. 53, pp. 1753-1758 (2006). o 149. T. H. Lee, F. T. Hwang, W. T. Shay, C. T. Lee, “Electromagnetic field sensor using Mach-Zehnder waveguide modulator”, Micro. Optical Technol. Lett., vol. 48, pp. 1897-1899 (2006). o 150. P. S. Chen, C. T. Lee, “Investigation of Ohmic mechanism for chlorine-treated p-type GaN using x-ray photoelectron spectroscopy”, J. Appl. Phys., vol. 100, 044510 (2006). o 151. C. T. Lee, U. Z. Yang, C. S. Lee, P. S. Chen, “White Light Emission of Monolithic Carbon-Implanted InGaN–GaN Light-Emitting Diodes”, IEEE Photon. Technol. Lett., vol. 18, pp. 2029- 2031 (2006). o 152. C. Y. Lu, S. J. Chang, S. P. Chang, C. T Lee, C. F. Kuo, H. M. Chang, Y. Z. Chiou, C. L. Hsu, and I C. Chen, “Ultraviolet photodetectors with ZnO nanowires prepared on ZnO:Ga/glass templates”, Appl. Phys. Lett., vol. 89, 153101 (2006). o 153. C. L. Yu, S. J. Chang, P. C. Chang, Y. C. Lin, C. T. Lee, “Nitride-based ultraviolet Schottky barrier photodetectors with LT-AlN cap layers”, Superlattices and Microstructures, vol. 40, pp. 470-475 (2006). o 154. D. S. Liu, C. C. Wu, and C. T. Lee, “A transparent electrode prepared by co-sputtering system”, International J. Microwave and Optic. Technol., vol. 1, pp. 502-505 (2006). o 155. C. F. Shen, S. J. Chang, T. K. Ko, C. T. Kuo, S. C. Shei, W. S. Chen, C. T. Lee, C. S. Chang, and Y. Z. Chiou, “Nitride-Based Light Emitting Diodes With Textured Sidewalls and Pillar Waveguides”, IEEE Photon. Technol. Lett. Vol. 23, pp. 2517-2519 (2006). o · 2007 o 156. T. H. Lee, F. T. Hwang, C. T. Lee, and H. Y. Lee, “Investigation of LiNbO3 thin films grown on Si substrate using magnetron sputter“, Mater. Sci. Engineering B, vol. 136, pp. 92-95, (2007). o 157. P. S Chen, T. H. Lee, L. W. Lai and C. T. Lee, “Schottky mechanism for Ni/Au contact with chlorine-treated n-type GaN layer”, J. Appl. Phys., vol. 101, 024507 (2007) o 158. Y. C. Lien, S. H. Chen, E. Y. Chang, C. T. Lee, L. H. Chu, and C. Y. Chang, “Fabrication of 0.15-μm Γ-Shaped Gate In0.52Al0.48As/In0.6Ga0.4As Metamorphic HEMTs Using DUV Lithography and Tilt Dry-Etching Technique”, IEEE Electron Device Lett., vol. 28, pp. 93-95 (2007). o
159.
P. S. Chen, C. S. Lee, J. T. Yan, and C. T. Lee,
“Performance Improvement and Mechanism of Chlorine-Treated InGaN–GaN
Light-Emitting Diodes”, Electrochem.
o 160. P. F. Lin, C. Y. Ko, W. T. Lin, and C. T. Lee, “Effects of processing parameters on ultraviolet emission of In-doped ZnO nanodisks grown by carbothermal reduction”, Mater. Lett., vol. 61, pp. 1767-1770 (2007). o 161. T. C. Tsai, L. Z. Yu, and C. T. Lee, “Electroluminescence emission of crystalline silicon nanoclusters grown at a low temperature”, Nanotechnol., vol. 18, 275707 (2007) o 162. H. Y. Lee, K. H. Pan, C. C. Lin, Y. C. Chang, F. J. Kao, and C. T. Lee, “Current spreading of III-Nitride light-emitting diodes using plasma treatment”, J. Vac. Sci. Technol. B, vol. 25, pp. 1280-1283 (2007). o 163. L. H. Huang and C. T. Lee, “Investigation and Analysis of AlGaN MOS Devices with an Oxidized Layer Grown Using the Photoelectrochemical Oxidation Method”, J. Electrochem. Soci., vol. 154, pp. H862-H866 (2007) o 164. D. S. Liu, C. S. Sheu, and C. T. Lee, “Aliminum-nitride codoped zinc oxide films prepared using a radio-frequency magnetron cosputtering system”, J. Appl. Phys., vol. 102, 033516 (2007) o 165. C. T. Lee, J. H. Cheng, and H. Y. Lee, “Crystalline SiGe films grown on Si substrates usinglaser-assisted plasma-enhanced chemical vapor deposition at low temperature”, Appl. Phys. Lett., vol. 91, 091920 (2007). o 166. T. H. Lee, P. I Wu, and C. T. Lee, “Intergraded LiNbO3 Electrooptical Electromagnetic Field Sensor”, Microwave Optical Technol. Lett., vol. 49, pp. 2312-2314 (2007) o 167. Y. Zhang, D. J. Chen, and C. T. Lee, “Free exciton emission and dephasing in individual ZnO nanowires”, Appl. Phys. Lett., vol. 91, 161911 (2007). o 168. Y. C. Chang, F. Y. Chou, P. H. Yeh, H. W. Chen, S. H. Chang, Y. C. Lan, T. F. Guo, T. C. Tsai and C. T. Lee, “Effects of surface Plasmon responant scattering on the power conversion efficiency of organic thin-film solar cells”, J. Vac. Sci. Technol. B, vol. 25, pp. 1899-1902, (2007). o 169. R. W. Chuang, R. X. Wu, L. W. Lai, and C. T. Lee, “ZnO-on-GaN heterojunction light-emitting diode grown by vapor cooling condensation technique”, Appl. Phys. Lett., vol. 91, 231113 (2007). o 170. K. S. Chen, E. Y. Chang, C. C. Lin, S. S. Lee, W. C. Huang and C. T. Lee, “A Cu-based alloyed Ohmic contact system on n-type GaAs“, Appl. Phys. Lett., vol. 91, 233511 (2007). o 171. K. L. Lin, E. Y. Chang, Y. L. Hsiao, W. C. Huang, T. Li, D. Tweet, J. S. Maa, S. T. Hsu, and C. T. Lee, “Growth of GaN film on 150nm Si (111) using multilayer AlN/AlGaN buffer by metal-organic vapor phase epitaxy method“, Appl. Phys. Lett., vol. 91, 222111 (2007). o · 2008 o 172. L. W. Lai, H. Y. Lee, J. H. Cheng and C. T. Lee “Investigation of laser-assisted microcrystalline SiGe films deposited at low temperature“, J. Electronic Mater., vol. 37, 167 (2008). o 173. L. H. Chu, E. Y. Chang, Y. H. Wu, J. C. Huang, Q. Y. Chen, W. K. Chu, H. W. Seo, and C. T. Lee, “Interfacial reactions of Pt-based Schottky contacts on InGaP”, Appl. Phys. Lett., vol. 92, 082108 (2008). o 174. D. S. Liu, C. S. Sheu, C. T. Lee, C. H. Lin, “Thermal stability of indium tin oxide thin films co-sputtered with zinc oxide”, Thin Solid Films, vol. 516, pp. 3196-3203 (2008). o 175. L. H. Huang, S. H. Yeh, C. T. Lee, H. Tang, J. Bardwell and J. B. Webb, “AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors using oxide insulator grown by photoelectrochemical oxidation method”, IEEE Electron Devices Lett., vol. 29, pp. 284-286 (2008) o 176. Y. J. Lin, C. T. Lee, S. S. Chang and H. C. Chang, “Electronic transport and Schottky barrier height of Ni contact on p-type GaN”, J. Phys. D: Appl. Phys., vol. 41, 095107 (2008) o 177. C. I Kuo, H. T. Hsu, Edward Y. Chang, C. Y. Chang, Y. Miyamoto, S. Datta, M. Radosavljevic, G. W. Huang, and C. T. Lee, “RF and logic performance improvement of In0.7Ga0.3As/InAs/In0.7Ga0.3As composite-channel HEMT using gate-sinking technology”, IEEE Electron Device Lett., vol. 29, pp. 290-293 (2008). o 178. D. S. Liu, F. C. Tsai, C. T. Lee, and C. W. Sheu, “Properties of zinc oxide films cosputtered with aluminum at room temperature”, Jpn. J. Appl. Phys., vol. 47, pp. 3056-3062 (2008). o 179. L. W. Lai and C. T. Lee, “Investigation of optical and electrical properties of ZnO thin films”, Mater. Chemi. and Phys., vol. 110, pp. 393-396 (2008). o 180. C. T. Lee, C. C. Lin, H. Y. Lee, and P. S. Chen, “Changes in surface state density due to chlorine treatment in GaN Schottky ultraviolet photodetectors”, J. Appl. Phys., vol. 103, 094504 (2008). o 181. C. H. Wen, S. Y. Chu, Y. Y. Shin, C. T. Lee, Y. D. Juang, “Red, green and blue photoluminescence of erbium doped potassium tantalate niobate polycrystalline”, J. Alloy Comp., Vol. 459, pp. 107-112 (2008) o 182. Y. J. Lin, P. H. Wu, C. L. Tsai, C. J. Liu, Z. R. Lin, H. C. Chang C. T. Lee, H. C. Chang, Z. R. Lin, and K. Y. Jeng, “Mechanisms of enhancing band-edge luminescence of Zn1-xMgxO prepared by the sol-gel method”, J. Phys. D: Appl. Phys., vol. 41, 125103 (2008). o 183. Y. J. Lin, P. H. Wu, C. L. Tsai, C. J. Liu, Z. R. Lin, H. C. Chang, and C. T. Lee, “Effects of Mg incorporation on the optical properties of ZnO prepared by the sol-gel method”, J. Appl. Phys., Vol. 103, 113709 (2008). o 184. C. Y. Lu, E. Y. Chang, J. C. Huang, C. T. Chang, M. H. Lin , C. T. Lee, “Enhancement of the Schottky barrier height using a nitrogen-rich tungsten nitride thin film for the Schottky contacts on AlGaN/GaN heterostructures”, J. Electronic Mater., vol. 37, pp. 167-171 (2008). o 185. K. C. Sahoo, C. W. Chang , Y. Y. Wong , T. L. Hsieh , E. Y. Chang , and C. T. Lee, “Novel Cu/Cr/Ge/Pd ohmic contacts on highly doped n-GaAs”, J. Electronic Mater., vol. 37, pp. 624-627 (2008). o 186. L. H. Huang, S. H. Yeh, C. T. Lee, “High frequency and low frequency noise of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with gate insulator grown using photoelectrochemical oxidation method “Appl. Phys. Lett., vol. 93, 043511 (2008). o 187. Y. J. Lin, F. T. Chien, C. T. Lee, C. S. Lin and Y. C. Liu, “Nonalloyed ohmic contact formation in Ti/Al contacts to n-type AlGaN”, J. Phys. D: Appl. Phys., vol. 41 175105 (2008) o 188. L. W. Lai, C, H, Liu, C. T. Lee, L. R. Lou, W. Y. Yeh and M. T. Chu, “Investigation of silicon nanoclusters embedded in ZnO matrices deposited by cosputtering system”, J. Mater. Res., vol. 23, pp. 2506-2511 (2008) o 189. H. Y. Lee, X. Y. Huang, and C. T. Lee, “Light output enhancement of GaN-based roughened LEDs using bias-assisted photoelectrochemical etching method”, J. Electrochem. Soci., vol. 155, pp. H707-H709 (2008) o 190. C. T. Lee and L. H. Huang, “Investigation and fabrication of AlGaN/GaN MOS-HEMTs with gate insultators grown by photoelectrochemical oxidation method”, Compound Semiconductors and Nitrides and Wide-bandgap Semiconductors for Sensors, Photonics and Electronics, vol. 16, no. 7, pp. 103-109 (2008) o 191. T. H. Lee, W. T. Shay, and C. T. Lee, “Integrated electrooptical electromagnetic field sensor with Mach-Zehnder waveguide modulator and annular antenna”, Microwave Opt. Technol. Lett., vol. 50, p. 3125 (2008) o 192. H. Y. Lee, T. H. Lee, W. T Shay, C. T. Lee, “Reflective type segmented electrooptical electric field sensor”, Sens. Actuator A-Phys., vol. 148, pp. 355-358 (2008). o 193. L. W. Lai, J. T. Chen, L. R. Lou, C. H. Wu and C. T. Lee, “ Performance Improvement of (NH4)2Sx-Treated III-V Compounds Multijunction Solar Cell Using Surface Treatment”, J. Electrochem. Soci, vol.155, pp. B1270-B1273 (2008) o
· 2009 o
194.
C. T. Lee, Y. F. Chen and C. H. Lin, “Phase-separated Si nanoclusters
form Si oxide matrix grown by laser-assiated chemical vapor deposition”, Nanotechnol., vol. 20, 025702 (2009). o
195. L. Z. Yu, X. Y. Jiang, X. L. Zhang, L. R. Lou, and C. T.
Lee, “Investigation of Főrster-type energy
transfer in organic light-emitting devices with
4-(dicyanomethylene)-2-t-butyl-6-(1, 1, 7, 7-tetramethy
ljulolidin-4-yl-vinyl)-4H-pyran doped cohost emitting layer”, J. Appl. Phys.,
vol. 105, 013105 (2009). o
196. L. H. Huang, K. C. Kan, and C. T. Lee, ”Analysis of Oxidized p-GaN
Films Directly Grown Using Bias-Assisted Photoelectrochemical Method”, J.
Electronic Mater., vol. 38, pp. 529-532
(2009) o
197.
C. T. Chang, S. K. Hsiao, E. Y. Chang, C. Y. Lu, J. C. Huang, and C. T.
Lee, “Changes of electrical characteristics for AlGaN/GaN HEMTs under
uniaxial tensile strain”, IEEE Electron Devices Lett., vol. 30, pp.213-215
(2009). o
198. Y. Zhang and C. T. Lee, “Site-controlled Growth and Field Emission Properties
of ZnO Nanorod Arrays”, J. Phys. Chem. C, vol. 113, pp 5920-5923 (2009) o 199. Y. Y. Wong, E. Y. Chang, T. H. Yang, J. R. Chang, Y. C. Chen. J. T. Ku, C. T. Lee, C. W. Chang, “The effect of AlN buffer growth parameters on the defect structure of GaN grown on sapphire by plasma-assisted molecular beam epitaxy”, J. Crystal Growth, vol. 311, pp. 1487-1492 (2009). o
200. C. T. Lee, Y. H.
Chou, J. T. Yan, and H. Y. Lee, “Light enhancement of Al nanoclusters
embedded in Al-doped ZnO films of GaN-based light-emitting diodes”, J. Vac. Sci. Technol. B, vol. 27, pp. 1901-1903 (2009). o
201. L. W. Lai, J. T. Yan, C. H.
Chen, L. R. Lou and C. T. Lee, “ Nitrogen function of
aluminum-nitride codoped ZnO films deposited using cosputter system”, J.
Mater. Res., vol. 24, No. 7, pp. 2252-2258 (2009). o
202. Y. J.
Lin, B. C. Huang, Y. C. Lien, C. T. Lee, C. L. Tsai and H. C. Chang, “Capacitance–voltage and
current–voltage characteristics of Au Schottky contact on n-type Si with a
conducting polymer”, J. Phys. D: Appl. Phys., vol. 42, 165104 (2009). o
203. T. H. Lee, W. T. Shay and C. T.
Lee, “ Electromagnetic source azimuth measurement using electrooptical
electromagnetic field probe”, IEEE Photon. Technol. Lett., vol. 21, pp.1163-1165 (2009). o
204. S. C. Tsai, C. H. Cheng,
N. Wang, Y. L. Song, C. T. Lee, and C. S. Tsai, “Silicon-based megahertz ultrasonic nozzles for
production of monodisperse micrometer-sized droplets”, IEEE Trans.
Ultrason. Ferroelectr. Freq. Control,
vol. 56, pp. 1968-1979 (2009). o
205.
L. Z. Yu and C. T. Lee, “Investigation of three-terminal
organic-based devices with memory effect and negative differential
resistance”, Appl. Phys. Lett., vol. 95, 103305 (2009). o
206.
C. T. Chang, S. K. Hsiao, E. Y. Chang,
Y. L. Hsiao, J. C. Huang, C. Y. Lu, H. C. Chang, K. W. Cheng, and C. T. Lee, “460-nm InGaN-based LEDs
grown on fully inclined hemisphere-shape-patterned sapphire substrate with
submicrometer spacing”, IEEE
Photon. Technol. Lett., vol. 21, pp.1366-1368 (2009). o
207.
J. T. Yana, and C. T. Lee, “Improved
detection sensitivity of Pt/b-Ga2O3/GaN
hydrogen sensor diode”, Sens. Actuators B, vol. 143, pp. 192-197 (2009). o
· 2010 o
208.
H. Y. Lee, Y. H. Chou, C. T. Lee,
W. Y. Yeh, and M. T. Chu, “Mechanisms
of lighting enhancement of Al nanoclusters-embedded Al-doped ZnO film in
GaN-based light-emitting diodes”, J. Appl. Phys., vol. 107,
014503 (2010). o
209. C.
T. Lee,
Y. H. Lin, L. W. Lai, and L. R. Lou, “Mechanism investigation of p-i-n
ZnO-based light-emitting diodes”, IEEE Photon. Technol. Lett., vol. 22,
pp.30-32 (2010). o
210. J. T. Yan, C. H. Chen, S. F. Yen, and C. T. Lee,
“Ultraviolet ZnO Nanorod/P-GaN-Heterostructured Light-Emitting Diodes”, IEEE Photon. Technol. Lett., vol. 22,
pp.146-148 (2010). o
211. C.
T. Lee, L. Z. Yu, and H. Y. Liu, “Optical performance improvement mechanism
of multimode-emitted white resonant cavity organic light-emitting diodes”,
IEEE Photon. Technol. Lett. vol. 22, pp. 272-274 (2010). o
212.
Y. L. Chiou, L. H. Huang, and C. T.
Lee, “Photoelectrochemical Function in Gate-Recessed AlGaN/GaN Metal–Oxide–Semiconductor
High-Electron-Mobility Transistors”, IEEE Electron Device Lett., vol. 31, pp.
183-185 (2010) o
213.
Y. J. Lin, J. A. Chu, Y. C. Su, C. T. Lee,
H. C. Chang, “Improved ohmic contacts
on pentacene based on Au with ultraviolet irradiation treatment”, Thin Solid
Films, vol. 518, pp. 2707-2709 (2010).
B. Conference papers · 1995 o
01.
H.P. Shiao, C.D. Tsai, Y.K. Tu, W. Lin and C.T. Lee, "High
Reliability GaAs Metal-Semiconductor-Metal Photodetectors with InGaP Buffer
and Capping Layers", The Pacific Rim Conference on Lasers and
Electro-Optics(CLEO) p.96 (1995) o
02.
C.D. Tsai, C.T. Lee, J.N. Shen, T.E. Nee, H.P. Shiao, C.Y. Wang and
J.I. Chi, "Electron Leakage Improvement of MESFET by Multiquantum
Barrier Buffer Layer", National Electron Devices and Materials Symp.
Kaoshiung p.256 (1995) o
03.
C.T. Lee and J.H. Yeh, "Long Wavelength Laser Spectra of
Nd:AlGaAs Structure Pumped by AlGaAs Laser", National Electronic Devices
and Materials Symp. Kaoshiung p.293 (1995) o
04.
M.L. Wu and C.T. Lee, "A Conformal Mapping Method for
Quasi-Static Analysis of Electrooptic Devices with Coplanar Microstrip Type
Electrode" Proc. of the First Radio Science Symp. Kaoshiung, p.139 (1995) o
05.
C.Y. Wang, Z.M. Chuang, W. Lin, Y.K. Tu and C.T. Lee, "Low
Threshold Current Strained-Quantum-Well Complex-Coupled DFB Laser",
Proc. of the First Radio Science Symp. Kaoshiung p.311 (1995) o
06.
C.T. Lee and M.L. Wu, "Analysis of Wave Propagation and Optical
Characteristics of Electrooptic Modulator by Combination of Finite Difference
and Conformal Mapping", Proc. of 1995 International Conference on Radio
Science, Beijing, China, p.444 (1995) o
07.
C.T. Lee, H.P. Shiao and C.D. Tsai, "The Design of Small
Divergence Beam for InGaAs/InGaP Strained-Quantum-Well Lasers", Proc. of
1995 International Conference on Optoelectronics and Lasers, HangZhou, China,
p.34 (1995) o
08.
C.T. Lee, H.H. Lai and H.C. Lee, "Complementary Optical Bistable
Switching Using Cross-Circuit Feedback Based on LiNbO3
Crystal", Proc. of 1995 International Conference on Optoelectronics and
Lasers, Hangzhou, China, p.177 (1995) o
09.
L.G. Sheu and C.T. Lee, "Stimulated Emission Cross Sections and
Fluorescence Branching Ratios of Nd in Ti-Diffused Nd:MgO:LiNbO3 Waveguides",
Proc. of 1995 International Conference on Optoelectronics and Lasers, o
10.
C.C. Chu, Y.J. Chan, R.H. Yuang, J.I. Chyi and C.T. Lee,
"Performance Enhancement Using WSix/ITO Electrodes in
InGaAs/InAlAs MSM Photodetectors", 2nd Chinese Optoelectronics Workshop
p.95 (1995) o
11.
C.T. Lee, P.L. Fan and J.C. Lee, "A Novel High-Efficiency Power
Divider with Arbitrary Power Division on Ti/Mg:LiNbO3 Channel
Waveguide", Semiconductor, Fiber and Integrated Optoelectronic Conference,
o
12.
C.T. Lee, L.G. Sheu and H.C. Lee, "Measurement of Propagation
Loss in Ti-Diffused LiNbO3 Waveguide Resonators with Phase
Modulator", Semiconductor, Fiber and Integrated Optoelectronic
Conference, o · 1996 o
13.
Z.M. Chuang, C.Y. Wang, W. Lin, H.H. Liao, J.Y. Su, Y.K. Tu and C.T. Lee,
"New Complex-Coupled o
14.
C.T. Lee, H.C. Lee and L.G. Sheu, "Improvement of Nonlinear
Distortions with Cascaded Mach-Zehnder Modulator", Proc. of XX
International Quantum Electronics, Sydney, Australia, p.16/95 (1996) o
15.
J.I. Chyi, T.E. Nee, C.T. Lee, J.L. Shieh and J.W. Pan,
"Formation of Self-Aligned InGaAs Quantum Dots on GaAs by Molecular Beam
Epitaxy", Ninth International Conference on Molecular Beam Epitaxy,
Malibu, California, U.S.A. o
16.
C.T. Lee, L.G. Sheu and H.C. Lee, "Optical Losses Measurement of
Channel Waveguide Devices by Phase Modulator", Proc. Third Chinese
Optoelectronics o
17.
T.E. Nee, C.T. Lee, J.W. Pan, and J.I. Chyi, "Molecular Beam
Epitaxial Growth of Self-Assembled In0.5Ga0.5As Quantum
Dots on In0.1Ga0.9As and In0.1Al0.9As",
International Electron Devices and Materials Symp. Hsinchu, p.261 (1996) o
18.
C.D. Tsai, H.P. Shiao, C.T. Lee, W. Lin and Y.K. Tu, "A Novel
InGaP/GaAs Metal-Semiconductor-Metal Photodetector", International Electron
Devices and Materials Symp., Hsinchu, p.251 (1996) o
19.
M.L. Wu, P.L. Fan, L.G. Sheu and C.T. Lee, "Transmission
Characteristics of Lossless Bends in Optical Waveguides",
Photonics/Taiwan, Hsinchu p.260 (1996) o 20. W.T. Ni, J.T. Shy and C.T. Lee, "Laser Astrodynamics and Geodesy", Ed. R.T. Jantzen and G.M. Keiser, p.1522, World Scientific Publishing Co. Pte. Ltd. (1996) o · 1997 o
21.
C.Y. Wang, Z.M. Chung, W. Lin, Y.K. Tu and C.T. Lee, "Resistance to
External Optical Feedback of Low Chirp Strained-Quantum Well Complex-Coupled
DFB Laser", Progress in Electromagnetics Research Symposium (PIERS) Hong
Kong, p.711 (1997)Invited paper o
22.
C.D. Tsai and C.T. Lee, "InGaN/GaN Double-Heterostructure Blue
Light-Emitting Diodes", Electronic Devices and Material Symp., Chung-Li,
p.155(1997) o
23.
S.M. Liao, C.H. Yang and C.T. Lee, "Effect of Nd Concentration in
AlGaAs Layer Grown by Liquid Phase Epitaxy", Electronic Devices and
Material Symp. Chung-Li, p.444 (1997) o
24.
K.L. Jaw, C.T. Lee and C.D. Tsai, "Ohmic Performance Study of
Ti/Pt/Au on N-type InAs/grated InGaAs Layers", Electronic Devices and
Material Symp., Chung-Li, p.448(1997) o 25. T.E. Nee, N.T. Yeh, J.I. Chyi, and C.T. Lee, "Matrix-Dependent Structural and Photoluminescence Properties of In0.5Ga0.5As Quantum Dots Grown by Molecular Beam Epitaxy", International Workshop on Nano-Physics and Electronics, Tokyo, p.187 (1997) o · 1998 o
26.
H.H. Lu and C.T. Lee, "Directly Modulated Transmission Systems
Using Half- o
27.
J.M. Hsu and C.T. Lee, "Transmission Tolerance by Variant-Index
in Microprism-Type Bent Waveguides", International Photonics Conference,
o
28.
C.D. Tsai, C.H. Fu and C.T. Lee, "Performance Study of
Indium-Tin-Oxide Transparent Schottky Electrode on GaAs MSM
Photodetectors", International Photonics Conference, Taipei (1998) o
29.
M.S. Doong, C.D. Tsai and C.T. Lee, "High Performance Optical Receiver
by Integration of InGaP/GaAs MSM Photodetector and GaAs MESFET",
International Electronic Devices and Material Symp. o
30.
C.T. Lee, "Individual Mode's Bending Loss Measurement for Multimode
Channel Waveguides Using Phase Modulator and Prism-Coupler", Proc. SPIE
(1998) o
31.
M.S. Doong, C.D. Tsai Y.T. Lyu and C.T. Lee, "High Performance
Optical Receiver by Integration of InGaP/GaAs MSM Photodetector and GaAs
MESFET", International Electronic Devices and Material Symp. o
32.
T.E. Nee, N.T. Yeh, J.I. Chyi and C.T. Lee, "Room-Temperature
Operation of In0.5Ga0.5As Quantum Dot Lasers Grown on
Misoriented GaAs Substrates by Molecular Beam Epitaxy", Proc. 2nd
International Symposium on Formation, Physics and Device Application of
Quantum Dot Structures, Sapporo, Japan P.226 (1998) o
33.
N.T. Yeh, T.E. Nee, P.W. Shiao, M.N. Chang, J.I. Chyi and C.T. Lee,
"Photoluminescence Characteristics of Self-Assembled In0.5Ga0.5As
Quantum Dot on Vicinal GaAs Substrates",Proc. 2nd International
Symposium on Formation , Physics and Device Application of Quantum Dot
Structures, Sapporo, Japan p.188 (1998) o
34.
C.T. Lee, "Process and Characterization of InGaP and Its
Applications", International Electronic Devices and Material Symp. o 35. T.E. Nee, N.T. Yeh, J.I. Chyi and C.T. Lee, "High Characteristic Temperature-Be-Doped In0.5Ga0.5As Quantum Dot Lasers Grown on GaAs Substrates by Molecular Beam Epitaxy", Proc. 10th International Conference on Molecular Beam Epitaxy, Cannes, France, p.308 (1998) o · 1999 o
36.
C.D. Tsai, Y.J. Lin and C.T. Lee, “The
Characterization of Mg Implanted GaN Material”
Progress in Electromagnetics Research Symposium (PIERS), p.529 (1999) o
37.
C.T. Lee and J.M. Hsu, “Tolerance Study in
Fabrication of Microprism-Type Symmetric Y-Junction Waveguides” Progress in
Electromagnetics Research Symposium (PIERS), p.889(1999)Invited paper o
38.
C.T. Lee, C.D. Tsai and H.P. Shiao, "High Performance GaAs
Metal-Semiconductor-Metal Photodetectors with Cu/InGaP Schottky
Barriers", The Fifth International Conference on Advanced
Materials, IUMRS-ICAM’99, Beijing China,
p.505, (1999) o
39.
C.T. Lee, C.D. Tsai and Y.T. Lyu, "Surface Analysis of InGaP
Treated with (NH4)2SX", Symp. On
Spectroscopic Techniques and Surface Science XVII, p.41 (1999) o
40.
C.T. Lee and K.C. Shyu, "GaAs Metal-Semiconductor Field Effect
Transistor with InGaP/GaAs Multiquantum Barrier Capping and Buffer
Layers", Third International Conference on Low Dimentional
Structures and Devices, Antalya, Turkey p.067 (1999) o
41.
H.W. Kao, C.D. Tsai, B.T. Tang and C.T. Lee, “Thermal Stability of Ti/Al/Au
Ohimc Contacted N-Type GaN’, Electronic Devices
and Material Symp. p.285 (1999) o
42.
C.T. Lee and J.H. Huang, “Nonalloyed
GaAs Metal-Semiconductor Field-Effect Transistor”, Electronic Devices and
Material Symp. p.391 (1999) o
43.
Y.R. Liu, D.S. Liu and C.T. Lee, “Performance
and Mechanism Study of GaN Light Emitting Diodes with Ion-Induced Damages”, Optical and Photonics o
44.
J.M. Hsu, F.T. Hwang and C.T. Lee, “Dependence
of Transmission Efficiency on Fabrication Tolerance in Microprism-Type Symmetric
Y-Junction Waveguides”, Optical and
Photonics Taiwan p.555 (1999) o
45.
H.H. Lu, C.T. Kuo, N.C. Wang and C.T. Lee, “Directly Modulated 1550nm
Am-VSB Optical CATV Long-Distance Transmission System”, Optical and Photonics
Taiwan p.449 (1999) o
46.
H.W. Kao, C.D. Tsai, Y.J. Lin and C.T. Lee, “Diffusion Barrier Pt Functions
on Ohmic Thermal Stability of N-Type GaN Materials”, Optical and Photonics Taiwan
p.47 (1999) o
47.
C.T. Lee, C.D. Tsai and Y.T. Lyu, “The
Characteristics and Thermal Reliability of InGaP Schottky Contact with Copper”, Chinese Institute of
Materials Science p.88 (1999) o
48.
C.T. Lee, “Neodymium-Diffused
Lithium Niobate Channel Waveguide Laser and Amplifier”, Optical and Photonics o · 2000 o
49.
C.D. Tsai, and C.T. Lee, “High
Performance of GaAs Metal-Semiconductor-Metal Photodetectors with Cu Schottky
Electrodes”, SPIE Photonics
(2000) o
50.
C.T. Lee, “Systematic Design
and Analysis of Microprism-Type Low-Loss and Wide-Angle-Bent Waveguides in Integrated
Optics”, International
Conference on the Application of Photonics Technology, Quebec, Canada SPIE
Vol.4087, p.192 (2000) Invited paper o
51.
C.T. Lee, “Long Term Thermal
Stability of Ohmic Contact on GaN Layers”,
The 4th Seminar on Science and Technology, Nitride Semiconductor
and Devices, Tokyo, Japan, p.19 (2000) Invited paper o
52.
C.T. Lee, B.T. Tong, H.Y. Lee and C.D. Tsai “Ohmic Performance of ZnO and
ITO/ZnO Contacted with N-type GaN Layer”,
International Conference on Electronic Materials and European Materials
Research Society, Strasbourg, France (2000) o
53.
C.D. Tsai, Y.J. Lin, D.S. Liu and C.T. Lee, “High Performance of GaAs
Metal-Semiconductor-Metal Photodetectors with Cu Schottky Electrodes”, SPIE Photonics,
Optoelectronic Materials and Devices II, Vol. 4078, p.724 (2000) o
54.
Y.J. Lin and C.T. Lee, “Ohmic Performance
Improvement of n-type GaN by (NH4)2Sx Treatment “, International Electronic
Devices and Material Symp. p.300 (2000) o
55.
H.Y. Lee, I.J. Lin, and C.T. Lee, “Investigation
of Double-δ-Doped
InAlGaP/GaAs/InGaAs MESFET” International
Electronic Devices and Material Symp. p.141 (2000) o
56.
D.S. Liu, C.D. Tsai and C.T. Lee, “Thermal
Reliability and Degradation Mechanism of Cu Schottky Contact to InGaP”, International Electronic
Devices and Material Symp. p.110 (2000) o
57.
C.T. Lee, “Passive Mechanism
Analysis and Ohmic Formation of (NH4)2Sx-treated III-V
Nitride Layers”, International
Electronic Devices and Material Symp. p.274 (2000)Invited paper o
58.
B.T. Tang, C.Y. Lo, Q.X. Yu, and C.T. Lee, “Improved Ohmic Performance for
ITO Contact to n-GaN with ITO/ZnO Multilayers”,
2nd International Photonics Conference p.217 (2000) o
59.
H.H. Lu, C.T. Kuo, N.C. Wang and C.T. Lee, “Long-Distance
Transmission of AM-VSB CATV Systems Using Fabry-Perot Laser Diode and Fiber
Bragg Grating”, 2nd
International Photonics Conference p.373 (2000) o 60. C.T. Lee, H.H. Lu and N.C. Wang, “Dispersion Compensation in Externally Modulated Transmission System Using Chirped Fiber Grating”, 2nd International Photonics Conference, p.,392 (2000) o · 2001 o
61.
C.T. Lee, “Ohmic Study of Blue
LED by Surface Treatment”, The Fifth Chinese
Symposium on Optoelectronics, o
62.
C.T. Lee, “Passivation Mechanism
and Analysis of Surface-Treated InGaN Layers”,
Advanced Compound Semiconductor Materials and Devices, o
63.
D.S. Liu, C.D. Tsai and C.T. Lee, “Thermal
Degradation Mechanism of Cu/Au Contact to o
InGaP
Photodector”, PIERS 2001, o
64.
H.Y. Lee, I.J. Lin and C.T. Lee, “Optical
Performances of Double-δ-Doped
InAlGaP/GaAs/InGaAs MESFET”,PIERS
2001,
Osaka, Japan p.478 (2001) o
65.
Q.X. Yu,
B.T. Tang and C.T. Lee,
“ITO/ZnO/GaN
Heterostructure and Contact Performances in Blue LED”,
PIERS 2001, o
66.
C.T. Lee and Y.J. Lin, “
(NH4)2Sx-treated Ohmic Formation
in Blue Light Emitting Diode”, PIERS
2001 , o
67.
C.T. Lee, H.P. Shiao and
Y.K. Tu , “
Growth and Performance Study of Aluminum-Free Strained Quantum-Well Pumping
Lasers”,
International Laser, Lightwave and Microwave Conference, o
68.
C.S. Lee, Y.J. Lin and C.T. Lee, “Oxidation Mechanism for Ohmic
Formation in Ni/Au Contacts to P-Type GaN Layers”, Electronics Devices and
Materials Symposia, p.171 (2001) o
69.
H.Y. Lee, S.Y. Zeng, H.M. Shieh and C.T. Lee, “Schottky Diodes of
InAlGaP Schottky Contact with Ti/Pt/Au, Pt/Au and Au
Metals” , Electronics
Devices and Materials Symposia, p.184 (2001) o
70.
T.W . Huang and C.T. Lee,
“AlGaN/GaN
Heterostructure Metal-Semiconductor-Metal Ultraviolet
Photodetector “,
Electronics Devices and Materials Symposia, p.835 (2001) o
71.
B.J. Jiang, S.H. Do and C.T. Lee, “Investigation of Electrical and
Optical Properties of Si-Implantation in P-GaN”
, Proc. Optics and Photonics o
72.
H.L. Ma, H.H. Lu, C.S. Lee, C.T. Lee and N.C. Wang, “Up-Stream noise for the
Internet Access for Fiber Optical CATV Systems “, Proc. Optics and Photonics
Taiwan, p.198 (2001) o
73.
C.L. Hsu and C.T. Lee , “The Study of Surface Acoustic
Wave Device Fabricated on GaN
Based substrates”, Proc. Optics and
Photonics o
74.
C.H. Lin, T.H. Lee, H.H. Tu, G.H. Sun and C.T. Lee,
“Silicon Oxynitride
Waveguide in DWDM Growth by CO2 Laser Assisted Plasma Enhanced
Chemical Vapor Deposition”, Proc. Optics and
Photonics Taiwan, p.535 (2001) o
75.
H.L. Ma, H.H. Lu, C.S. Lee, C.T. Lee and N.C. Wang, “A DWDM System for 256-QAM
Transmission Over o · 2002 o
76.
C.T. Lee and Y.J. Lin, “Surface Treatment
and Passivation of III-Nitride LEDS”,
Photonics West, o
77.
Y.J. Lin, C.S. Lee and C.T. Lee, “Induced
variation in barrier height and ohmic formation of oxidized Au/Ni/(NH4)2Sx–treated p-GaN”, International Topical Meeting
on Optics in computing, o
78.
H.Y. Lee and C.T. Lee, “The Investigation
for Various Treatment of InAlGaP Schottky Diodes”, International Conference on
Electronic Materials, o
79.
C.S. Lee, C.T. Lee, F.T. Hwang and Y.J. Lin, “Activation of Mg in p-type GaN
by excimer laser”, Proc. Optics and
Photonics, p.159 (2002). o
80.
T.H. Lee, K.H. Tu and C.T. Lee, “
Novel structure for flattened response of arrayed-waveguide grating
multiplexer”, Proc. Optics and
Photonics, p.105 (2002). o
81.
H.Y. Lee, H.W. Chen and C.T. Lee, “Metal-Oxide-Semiconductor
Devices on n-type GaN”, Proc. Optics and
Photonics, p.162 (2001). o
82.
D.S. Liu and C.T. Lee, “Thermal degradation
mechanism and deep level investigation for Cu/Au contacts to InGaP Schottky
diodes”, International
Electronic Devices and Material Symp. p.129 (2002). o
83.
C.H. Lin, T.H. Lee, S.C. Lin and C.T. Lee, “Properties of silicon
nanostructures deposited by laser assisted plasma enhanced chemical vapor
deposition system”, International
Electronic Devices and Material Symp. p.337 (2002). o
84.
H.Y. Lee, W.Y. Lo and C.T. Lee, “Investigation
of metal-semiconductor-metal photodetectors with InAlGaP capping and buffer
layers”, International
Electronic Devices and Material Symp. p.381 (2002). o
85.
Y.L. Huang, C.Y. Fang, E.Y. Chang, C.S. Lee and C.T. Lee, “An AlGaN/GaN HEMT with WNx
T-gate for High Temperature Application”,
Electrochemical Society Proc., Vol. 2002-14, p. 131 Salt City, U.S.A (2002). o 86. C.T. Lee, “Integrated Optical Devices Based on LiNbO3 crystal”, Proc. Optics and Photonics , p. 278 (2002).Invited paper o · 2003 o
87.
C.T. Lee and H.W. Chen, “Oxidation
Growth for GaN metal-oxide-semiconductor Devices", First Asia-Pacific
Workshop on Widegap Semiconductors, Hyogo, Japan, p.75 (2003).Invited paper o 88. W.H. Huang and C.T. Lee, “Surface Induced Mechanism for Sulfurated GaN Layers”, First Asia-Pacific Workshop on Widegap Semiconductors, Hyogo, Japan, p.94 (2003). o 89. H.Y. Lee and C.T. Lee, “Surface Passivation of GaAs MSM-PDs Using the Photoelectronchemical Oxidation Method”, Electronic Devices and Material Symp. p.288 (2003). o 90. D. S. Liu and C. T. Lee, 2003, Nov. 21-22, “Characteristics of ZnO film prepared by rf sputtering”, Electron Devices and Materials Symposium Keelung, Taiwan, pp. 449-452 (2003). o
91.
Z. D. Li, Y. J. Lin and C. T. Lee, “The
dependendence of p-type GaN ohmic contact performances on the thermal
treatment time”, Optics and
Photonics o 92. S. H. Chang, H. Y. Lee, W. Y. Lo and C. T. Lee, “Surface passivation of N-type GaAs MESFETs using the photoelectrochemical oxidation method”, Optics and Photonics Taiwan, Proc. I, pp. 35-37 (2003). o
93.
陳俊吉, 陳威宏 and C. T. Lee, “The fabrication and performance
of n-type GaN MOSFETs”, Optics and
Photonics o
94.
李宗信, 魏志安 and C. T. Lee, “Acoustooptical tunable filter
wavelength converter”, Optics and
Photonics o · 2004 o
95.
C. T. Lee, “Tunable emission
wavelength of Si nanostructure in Si oxide matrix”, International Electronic
Devices and Material Symp., o 96. C. T. Lee, K. R. Chang, L. Z. Yu, T. H. Lee, C. C. Chuo, C. E. Tsai, T. C. Wang, J. T. Hsu, and T. H. Chen, “Investigation of electrical and optical properties of Al doped ZnO films for UV transparent electrode”, International Electronic Devices and Material Symp., Hsinchu, Taiwan, pp. 87-90 (2004). o 97. C. H. Lin, T. C. Tsai, C. T. Lee, and H. Y. Lee, “Photoluminescence degradation mechanism of Si nanoclusters by long-term He-Cd laser irradiation”, International Electronic Devices and Material Symp., Hsinchu, Taiwan, pp. 237-240 (2004). o 98. C. T. Lee, U. Z. Yang, H. Y. Lee, and P. S. Chen, “Photoluminescence studies of Carbon implanted GaN:Mg”, International Electronic Devices and Material Symp., Hsinchu, Taiwan, pp. 331-334 (2004). o 99. T. H. Lee, F. C. Pai1, W. T. Shay, and C. T. Lee, “Novel structure of electromagnetic field sensor with LiNbO3 optical modulator and antennas”, Optics and Photonics Taiwan, Chung-Li, Taiwan, B-SA VII 2-6 (2004). o 100.李格瑋、李欣縈、李清庭, “氮化鋁鎵/氮化鎵異質接面金屬-半導體-金屬紫外光檢測器”, Optics and Photonics Taiwan, Chung-Li, Taiwan, A-SU-I 9-1 (2004). o
101.
D. S. Liu, and C. T. Lee, “X-ray
Photoelectron Spectroscopy Study for Cu/Au Schottky Contact on InGaP Layer”, Optics and Photonics o 102. 周國龍、王迺愨、李清庭, “質子交換聲波波導之聲光可調波長轉換器”, Optics and Photonics Taiwan, Chung-Li, Taiwan, PB-SU1-75 (2004). o · 2005 o 103. C. T. Lee and C. H. Lin, “Investigated the performance of Si nanostructure in Si oxide matrix”, 第七屆兩岸三地中華光電子研討會, 台中 (2005). o
104.
C. T. Lee, “GaN Metal-Oxide Semiconductor
Field-Effect Transistor Devices”,
Asia-Pacific Workshop on Widegap Semiconductors, o
105.
C. T. Lee, “III-V nitride base
MOS devices”, The 9th
National MOCVD Academic Conference of China, o
106.
C. T. Lee, T. H. Lee, F. C. Pai and W. T. Shay, “Optical Waveguide
Electromagnetic Signal Sensors”, The 10th
Optoelectronics and Communications Conference, o
107.
J. C. Wang, I Y. Fu, and C. T. Lee, “2.4GHz Microstrip Bandpass
Filter on Al2O3 Substrate by Thin-Film Technology” CECA 2005 Conference on
electronic communication and applications, | |
