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30.  IEEE Photonics Technology Letters, Associated Editor (2010¦~~¨´¤µ)

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01. §õ²M®x, ¥Á°ê90¦~, ¡§¤@ºØ¥Î©óªi¾É¤¤¤§¨C¤@¼ÒºA·l¥¢¤§«D¯}Ãa©Ê´ú¶q¤èªk¡¨ ¤¤µØ¥Á°êµo©ú±M§Q®×¸¹123585.

02. §õ²M®x, ¥Á°ê90¦~,¡§¤Æ¦Xª«¥b¾ÉÅé¸Ë¸m¤Î¨ä»s§@¤èªk¡¨,¤¤µØ¥Á°êµo©ú±M§Q®×¸¹140784.

03. Ching-Ting Lee, 2001, ¡§Nondestructive measurement method of individual modes loss for waveguides¡¨, ¬ü°ê±M§Q, United   States Patent US6219475 B1.

04. Ching-Ting Lee, 2002, ¡§Method for manufacturing III-nitride semiconductor devices¡¨, ¬ü°ê±M§Q, United States Patent US6486050. B1

05. Ching-Ting Lee, 2003, ¡§Method for manufacturing a compound semiconductor device¡¨, ¬ü°ê±M§Q, United States Patent US6531383. B1.

06. Ching-Ting Lee, 2004, ¡§°ò¤_´á¤ÆñSªºIII-V±Ú¤Æ¦Xª«¥b¾ÉÅé¸Ë¸mªº»s³y¤èªk¡¨, ¤j³°±M§Q®×¸¹00126376.5.

07. Ching-Ting Lee, 2001, ¡§Method for manufacture a compound semiconductor device¡¨, ¼w°ê±M§Q®×¸¹100 48 196.5.

08. Ching-Ting Lee, 2001, ¡§Compound semiconductor devices and fabrication method¡¨, Áú°ê±M§Q®×¸¹2000-60963.

09. Ching-Ting Lee, 2001, ¡§Method for manufacture a compound semiconductor device¡¨, ¤é¥»±M§Q¥Ó½Ð¤¤.

10. §õ²M®x, ¥Á°ê92¦~, ¡§III±Ú-´á±Ú¥b¾ÉÅ餸¥ó»s³y¤èªk¡¨, ¤¤µØ¥Á°êµo©ú±M§Q®×¸¹177507.

11. Ching-Ting Lee, 2007, ¡§Method for manufacturing III-nitride semiconductor devices¡¨, ¤é¥»±M§Q®×¸¹3905423.

12. Ching-Ting Lee, 2002, ¡§Method for manufacturing III-nitride semiconductor devices¡¨, ¼w°ê±M§Q¥Ó½Ð¤¤.

13. ¼B¥N¤s¡B§õ²M®x¡B§d«T¼y¡BªL«T¿³¡A¥Á°ê97¦~¡A¡§¤@ºØ®gÀW¦@ÂqÁá¤è¦¡¨I¿n»s³y¶ì½¦°òªO¾É¹qÁ¡½¤¤§¸Ë¸m¡¨¡A ¤¤µØ¥Á°êµo©ú±M§Q®×¸¹ I 295325¡C

14. ¼B¥N¤s¡B§õ²M®x¡B³\¥[ª@¡B½²´I¶v¡A ¥Á°ê99¦~¡A¡§P«¬®ñ¤Æ¾NÁ¡½¤»s§@¤èªk»P¨t²Î¡¨¡A  ¤¤µØ¥Á°êµo©ú±M§Q®×¸¹ I 319595¡C

15. ±i¥»¨q¡B±i³sÂz¡B§õ²M®x¡B¿c«H冲¡B³¯¤DÅv¡B§d°ê±ö¡Bªô¦w¥­, ¥Á°ê98¦~¡A¡¨³z©ú¤Ó¶§¯à¹q¦À¨t²Î¡¨¡A ¤¤µØ¥Á°êµo©ú±M§Q®×¸¹ I 313068¡C

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17. Ching-Ting Lee, 2011, "Method for forming silicon film having microcrystal", ¬ü°ê±M§Q¥Ó½Ð¤¤¡C.

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(A) ´Á¥Z½×¤å Referred Paper

 

01. J. W. Wu, C. Y. Chang, K. C. Lin, E. Y. Chang, J. S. Chen and C. T. Lee, "The Thermal Stability of Ohmic Contact to n-type InGaAs Layer", J. Electron. Mater., vol. 24, pp.79-82 (1995)SCI ­pµe½s¸¹ : NSC83-0417-E009-016

 

02. C. T. Lee, H. P. shiao and Y. C. Chou, "MESFET Performance and Limitations of Optimized GaAs Strained Buffer Layer Grown on InP by Molecular Beam Epitaxy", Solid-State Electron., vol. 38, pp.1529-1531(1995)SCI ­pµe½s¸¹ : NSC84-2623-D008-001

 

03. C. C. Chu, Y. J. Chan, R. H. Yuang, J. I. Chyi and C. T. Lee, "Performance Enhancement Using WSiX/ITO Electrodes in InGaAs/InAlAs MSM Photodetectors", Electron. Lett., vol. 31, pp.1692-1694 (1995)SCI ­pµe½s¸¹ : NSC84-2215-E008-003

 

04. C. T. Lee, C. D. Tsai, C. Y. Wang, H. P. Shiao, T. E. Nee and J. N. Shen, "Sidegating Effect Improvement of GaAs Metal-Semiconductor Field Effect Transistor by Multiquantum Barrier Structure", Appl. Phys. Lett. vol. 67, pp. 2046-2048 (1995)SCI ­pµe½s¸¹ : NSC84-2623-D008-001

 

05.  H. P. Shiao, C. Y. Wang, Y. K. Tu, W. Lin and C. T. Lee, "InGaP/GaAs Multiquantum Barrier Structures Prepared by Low-Pressure Organometallic Vapor Phase Epitaxy", Solid-State Electron., vol. 38, pp. 2001-2004 (1995) SCI

 

06. J. D. Guo, C. I. Lin, M. S. Feng, F. M. Pan, G. C. Chi and C. T. Lee, "A Bilayer Ti/Ag Ohmic Contact for Highly Doped n-type GaN Films", Appl. Phys. Lett. vol. 68, pp. 235-237 (1996) SCI ­pµe½s¸¹ : NSC84-2215-E009-084

 

07. C. Y. Wang, Z. M. Chung, W. Lin, Y. K. Tu and C. T. Lee, "Low Chirp and High Power 1.55   mm Strained-Quantum-Well Complex-Coupled  DFB Laser", IEEE Photon. Technol. Lett., vol. 8, pp. 331-333 (1996)            SCI

 

08. C. T. Lee, P. L. Fan and J. C. Lee, "Design of the Spot Size for Single Mode Ti/Mg:LiNbO3 Channel Waveguide for Optimum Coupling with Fiber", Fiber Integra. Opt., vol. 15, pp. 149-158 (1996) SCI ­pµe½s¸¹ : NSC84-2215-E008-006

 

09. Y. L. Lai, E. Y. Chang, C. Y. Chang, T. K. Chen, T. H. Liu, S. P. Wang, T. H. Chen and C.  T. Lee, "5mm High-Power-Density Dual-Delta-Doped Power HEMTS for 3V L-Band Applications", IEEE Electron Device Lett., vol. 17, pp. 229-231 (1996)SCI ­pµe½s¸¹ : NSC84-2215-E009-024

 

10. C. T. Lee, H. C. Lee, H. H. Lai and L. G. Sheu, "Complementary Optical Bistable Operation with Integration of Two Directional Couplers on LiNbO3 Crystal", Jpn. J. Appl. Phys., vol. 35, pp. 2686-2689 (1996)SCI ­pµe½s¸¹ : NSC85-2215-E008-002

 

11. C. T. Lee, J. H. Yeh and Y. T. Lyu, "Characterization of Nd Doped AlGaAs Grown by Liquid Phase Epitaxy", J. Crystal Growth, vol. 163, pp. 343-347 (1996)            SCI

 

12. L. G. Sheu, C. T. Lee, and H. C. Lee, "Nondestructive Measurement of Loss Performance in Channel Waveguide Devices with Phase Modulator", Opt. Rev., vol. 3, pp. 192-196 (1996)SCI ­pµe½s¸¹ : CS85-0210-D008-007

 

13. C. T. Lee, P. L. Fan, J. C. Lee and T. T. Kuo, "A Novel Power Divider with Arbitrary Power Division and High Coupling Efficiency with Single Mode Fiber", Opt. Quant. Electron., vol. 28, pp. 1417-1425 (1996)SCI ­pµe½s¸¹ : NSC85-2215-E008-002

 

14. C. T. Lee, H. C. Lee and L. G. Sheu, "The Reduction of Harmonic and Intermodulation Distortions with a Cascaded Mach-Zehnder Modulator", Opt. Rev., vol. 3, pp. 341-344 (1996)SCI ­pµe½s¸¹ : NSC85-2215-E008-002

 

15. C. T. Lee, and L. G. Sheu, "Analysis of Nd:MgO:Ti:LiNbO3 Waveguide Laser with Nonuniform Concentration Distributions",  IEEE J. Lightwave Technol., vol. 14, pp. 2268-2276 (1996)SCI ­pµe½s¸¹ : NSC84-2215-E008-006

 

16. M. L. Wu, P. L. Fan, J. M. Hsu and C. T. Lee, "Design of Ideal Structures for Lossless Bends in Optical Waveguides by Conformal Mapping", IEEE J. Lightwave Technol., vol. 14, pp. 2604-2614 (1996)SCI ­pµe½s¸¹ : NSC83-0417-E008-004

 

17. C. T. Lee, C. Y. Wang and Y. C. Chou, "Characterization of GaAs Buffer Layer Function in GaAs/InP Strained Structure Grown by MBE", Thin Solid Films, vol. 286, pp. 107-110 (1996)SCI ­pµe½s¸¹ : NSC82-0115-E008-182

 

18. C. T. Lee, H.P. shiao, N.T. Yeh, C.D. Tsai, Y.T. Lyu and Y.K. Tu, "Thermal Reliability and Characterization of InGaP Schottky Contact with Ti/Pt/Au Metals", Solid-State Electron., vol. 41, pp.1-5 (1997)SCI ­pµe½s¸¹ : NSC85-2215-E008-021

 

19. J. M. Hsu, M. L. Wu and C. T. Lee, "Hybrid Approach for Quasistatic Analysis of Shield Strip Lines", Microwave Optic. Technol. Lett., vol. 14, pp. 111-115 (1997)SCI ­pµe½s¸¹ : NSC83-0417-E008-006

 

20. M. L. Wu, P. L. Fan and C. T. Lee, "Completely Adiabatic S-Shaped Bent Tapers in Optical Waveguides", IEEE Photon. Technol. Lett., vol. 9, pp. 212-214 (1997)       SCI ­pµe½s¸¹ : NSC84-2215-E008-006

 

21. C. T. Lee, M. L. Wu, L. G. sheu, P. L. Fan and J. M. Hsu, "Design and Analysis of Completely Adiabatic Tapered Waveguides by Conformal Mapping", IEEE J. Lightwave Technol., vol. 15, pp. 403-410 (1997)SCI ­pµe½s¸¹ : NSC83-0417-E008-004

 

22. C. T. Lee, M. Y. Yeh, C. D. Tsai and Y. T. Lyu, "Low Resistance Bilayer Nd/Al Ohmic Contacts on n-type GaN", J. Electron. Mater., vol. 26, pp. 262-265 (1997)SCI ­pµe½s¸¹ : NSC84-2215-E008-029

 

23. H. Y. Wang and C. T. Lee, "Novel Immittance Function Simulator Using a Single Current Conveyor", Electron. Lett., vol.33, pp.574-576 (1997)

SCI ­pµe½s¸¹ : NSC83-0417-E008-006

 

24. C. Y. Wang, Z. M. Chuang, H. H. Liao, Y. K. Tu and C. T. Lee, "Resistance to External Optical Feedback of Low-Chirp Strained-Quantum-Well Complex-Coupled Distributed-Feedback Laser", Jpn. J. Appl. Phys., pt.1, vol. 36, pp. 2685-2688 (1997)            SCI

 

25.  C. D. Tsai, H. P. Shiao, C. T. Lee, and Y. K. Tu "High Performances and Reliability of Novel GaAs MSM Photodetectors with InGaP Buffer and Capping Layers", IEEE Photon. Technol. Lett., vol. 9, pp. 660-662 (1997)SCI ­pµe½s¸¹ : NSC85-2215-E008-021

 

26.  P. L. Fan, M. L. Wu and C. T. Lee, "Analysis of Abrupt Bent Waveguides by the Beam Propagation Method and the Conformal Mapping Method", IEEE J. Lightware Technol., vol. 15, pp. 1026-1031 (1997)SCI ­pµe½s¸¹ : NSC84-2215-E008-006

 

27. C. T. Lee, and M. L. Wu, "Combination of Conformal Mapping and Finite Difference Methods for Analysis of Supported Coplanar Waveguides", Microwave Optic. Technol. Lett., vol. 15, pp. 273-277 (1997)            SCI ­pµe½s¸¹ : NSC85-2215-E008-021

 

28. Y. L. Lai, E. Y. Chang, C. Y. Chang, M. C. Tai, T. H. Liu, S. P. Wang, K. C. Chung, and C. T. Lee, "High-Efficiency and Low-Distortion Directly-Ion-Implanted GaAs Power MESFET's for Digital Personal Handy-Phone Applications", IEEE Electron Device Lett., vol. 18 pp. 429-431 (1997) SCI ­pµe½s¸¹ : NSC85-2215-E009-054

 

29.  M. L. Wu and C. T. Lee, "Quasi-Static Analysis of Arbitrary Coplanar Waveguide Structures by Combination of Conformal Mapping and Finite Difference Method", Microwave Optic. Technol. Lett., vol.16, pp.149-154 (1997)SCI ­pµe½s¸¹ : NSC85-2215-E008-021

 

30. C. T. Lee, M. H. Lan and C. D. Tsai, "Improved Performances of InGaP Schottky Contact with Ti/Pt/Au Metals and MSM Photodetectors by (NH4)2Sx Treatment", Solid-State Electron., vol. 41, pp. 1715-1719  (1997)            SCI ­pµe½s¸¹ : NSC86-2215-E008-017

 

31. C. T. Lee, and P. L. Fan, "Beam Propagation Analysis of Fast Mode-Conversion Evaluation Bent Waveguides with Apexes-Linked Microprisms", IEEE Microw. Guided Wave Lett., vol. 7, pp. 338-340 (1997)SCI ­pµe½s¸¹ : NSC84-2215-E008-006

 

32. C. T. Lee, M. L. Wu, and J. M. Hsu, "Beam Propagation Analysis for Tapered Waveguides : Taking Account of Curve Phase-Front Effect in Paraxial Approximation",  IEEE J. Lightwave Technol., vol.15, pp.2183-2189  (1997)SCI ­pµe½s¸¹ : NSC85-2215-E008-002

 

33. J. I. Chyi, T. E. Nee, C. T. Lee, J. L. Shieh and J. W. Pan, "Formation of Self-Organized In0.5Ga0.5As Quantum Dots on GaAs by Molecular Beam Epitaxy", J. Crystal Growth, vol. 175, pp. 777-781 (1997)SCI ­pµe½s¸¹ : NSC85-2215-E008-022

 

34. C. T. Lee and L. G. Sheu, "Analysis of End-Pumped Nd:Ti:LiNbO3 Microchip Waveguide Fabry-Perot Lasers",  IEEE J. Lightwave Technol., vol. 15, pp. 2147-2153 (1997)SCI ­pµe½s¸¹ : NSC85-2215-E008-002

 

35. C. Y. Wang, H. P. Shiao, Z. M. Chuang, H. H. Liao and C. T. Lee, "Wide Temperature Range Operation of 1.55um Current Blocking Grating Complex-Coupled DFB Laser", Electron. Lett., vol. 33, pp. 1712-1713 (1997)SCI

 

36. C. T. Lee and T. E. Nee, "Electroabsorption of Unstrained InGaAs/InAlGaAs Multiple Quantum Well Structure Grown on GaAs Substrate", Int. J. of High Speed Electronics and Systems, vol. 8, pp. 587-598 (1997)EI ­pµe½s¸¹ : NSC87-2215-E008-021

 

37. L. W. Chang, C. T. Lee and P. Y. Chien, "Absolute Displacement Measurement by Using the Synthesized Modulation Index of a Frequency-Modulated Interferometer", Rev. Sci. Instrum., vol. 68, pp. 3085-3087 (1997) SCI

 

38. C. T. Lee, and J. M. Hsu, "Systematic Design of Full Phase Compensation Microprism-Type Low-Loss Bent Waveguide", Appl. Opt., vol. 37, pp. 507-509 (1998)SCI ­pµe½s¸¹ : NSC85-2215-E008-002

 

39. L. W. Chang, C. T. Lee and P. Y. Chien, "Optical Interferometric Signal Generator Based on Electrical-Locked Loop Technique",   Rev. Sci. Instrum., vol. 69, pp.1246-1252 (1998)SCI

 

40.  H. Y. Wang and C. T. Lee, "Realisation of R-L and C-D Immittance Using Single FTFN", Electron. Lett., vol. 34, pp. 502-503(1998)SCI

 

41 C. T. Lee, H. C. Lee and L. G. Sheu, "Improvement of Nonlinear Modulation by Cascaded Mach-Zehnder Configuration", Fiber Integra. Opt., vol. 17, pp. 119-130 (1998)SCI ­pµe½s¸¹ : NSC87-2215-E008-011

 

42. J. M. Hsu and C. T. Lee, "Systematic Design of Novel Wide-Angle Low-Loss Symmetric Y-Junction Waveguides", IEEE J. Quant. Electron., vol. 34, pp. 673-679 (1998)SCI ­pµe½s¸¹ : NSC87-2215-E008-011

 

43. C. T. Lee, L. W. Chang and P. Y. Chien, "Intermetric Fiber Sensors Based on Triangular Phase Modulator", J. Chin. Inst. Eng., vol. 21, pp. 305-315 (1998)SCI ­pµe½s¸¹ : NSC84-2215-E008-006

 

44. C. T. Lee, and M. L. Wu, "Microprism for Wide-Angle Low Loss Y-Junction Waveguide", Fiber Integra. Opt., vol. 17, pp. 213-219 (1998)SCI ­pµe½s¸¹ : NSC87-2215-E008-011

 

45. C. T. Lee and J. M. Hsu, "Systematic Design of Microprism-Type Low-Loss Step-Index Bent Waveguides", Appl. Opt., vol. 37, pp. 3948-3953 (1998)SCI ­pµe½s¸¹ : NSC87-2215-E008-011

 

46. C. T. Lee, K. L. Jaw and C. D. Tsai, "Thermal Stability of Ti/Pt/Au Ohmic Contacts on InAs/Graded InGaAs Layers", Solid-State Electron., vol. 42, pp. 871-875 (1998)SCI ­pµe½s¸¹ : NSC85-2215-E008-021

 

47. C. T. Lee and L. G. Sheu, "Analysis of End-Pumped and Electrooptically Tuned Nd:Ti:MgO:LiNbO3 Microchip Waveguide Lasers", IEEE J. Lightwave Technol., vol. 16, pp. 1315-1322(1998)SCI ­pµe½s¸¹ : NSC87-2215-E008-011

 

48. T. E. Nee, N. T. Yeh, J. I. Chyi and C. T. Lee, "Matrix-Dependent Structural and Photoluminescence Properties of In0.5Ga0.5As Quantum Dots Grown by Molecular Beam Epitaxy", Solid-State Electron., vol. 42, pp.1331-1334(1998)SCI ­pµe½s¸¹ : NSC86-2215-E008-007

 

49. L. W. Chang, C. T. Lee and P. Y. Chien, "Displacement Measurement by Synthesized Light Source Based on Fiber Bragg Grating", Opt. Commun., vol. 154, pp. 261-267 (1998) SCI

 

50. H. Y. Wang and C. T. Lee, "Cascadable Current-Mode Filters Using Single FTFN", Electron. Lett., vol. 34, p.1801 (1998) SCI

 

51. H. H. Lu and C. T. Lee, "Directly Modulated CATV Transmission Systems Using Half-Split-Band and Wave length Division Multiplexing Techniques", IEEE Photon. Technol. Lett., vol. 10, pp. 1653-1655 (1998) SCI ­pµe½s¸¹ : NSC87-2215-E008-011

 

52. C. T. Lee, C. H. Fu, C. D. Tsai and W. Lin, "Performance Characterization of InGaP Schottky Contact with ITO Transparent Electrodes", J. Electron. Mater., vol. 27, pp.1017-1021 (1998) SCI ­pµe½s¸¹ : NSC86-2215-E008-017

 

53. C. T. Lee, C. T. Huang and J. Y. Chen, "Effect of SiOx Buffer Layer on Propagation Loss in LiNbO3 Channel Waveguides",  J. Appl. Phys., vol. 84, pp. 1204-1209 (1998) SCI ­pµe½s¸¹ : NSC87-2215-E008-011

 

54. C. T. Lee, "Nondestructive Measurement of Separated Propagation Loss for Multimode Waveguides", Appl. Phys. Lett., vol. 73, pp. 133-135 (1998)            SCI ­pµe½s¸¹ : NSC87-2215-E008-011

 

55. C. T. Lee, "Optically Induced Sidegating Current Isolation of GaAs MESFET by Multiquantum Barrier", IEEE Trans. Electron Devices, vol. 45, pp. 2083-2085 (1998)SCI ­pµe½s¸¹ : NSC85-2215-E008-021

 

56. C. T. Lee, L. W. Chang and P. Y. Chien, "Frequency Multiplier Using Cascade Integrated-Optic Phase Modulators Based on Sagnac Interferometer",  Opt. Commun., vol. 158, pp. 181-188 (1998)SCI

 

57. C. D. Tsai, C. H. Fu, Y. J. Lin and C. T. Lee, "Study of InGaP/GaAs/InGaP MSM Photodetectors Using Indium-Tin-Oxide as Transparent and Antireflection Schottky Electrode",  Solid-State Electron., vol. 43, pp. 665-670 (1999)SCI ­pµe½s¸¹ : NSC88-2218-E008-015

 

58. N. T. Yeh, T. E. Nee, P. W. Shiao, M. N. Chang, J. I. Chyi and C. T. Lee, "Photoluminescence Characteristics of Self-Assembled In0.5Ga0.5As Quantum Dots on Vicinal GaAs Substrates",  Jpn. J. Appl. Phys., vol. 38 pp. 550-553 (1999)SCI ­pµe½s¸¹ : NSC87-2215-E008-012

 

59. T. E. Nee, N. T. Yeh, P. W. Shiao, J. I. Chyi and C. T. Lee, "Room-Temperature Operation of In0.5Ga0.5As Quantum Dot Lasers Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy",  Jpn. J. Appl. Phys., vol. 38, pp. 605-607 (1999)SCI ­pµe½s¸¹ : NSC87-2215-E008-012

 

60. L. W. Chang, P. Y. Chien and C. T. Lee, "Measurement of Absolute Displacement by a Double-Modulation Technique Based on a Michelson Interferometer", Appl. Opt., vol. 38, pp. 2843-2847(1999) SCI ­pµe½s¸¹ : NSC88-2215-E008-003

 

61. J. M. Hsu and C. T. Lee, "Design of Microprism-type Symmetric Y-Junction Waveguides Using Full-Phase Compensation Method", Appl. Opt., vol. 38, pp. 3234-3238(1999)SCI ­pµe½s¸¹ : NSC88-2215-E008-003

 

62. H. H. Lu and C. T. Lee, "Composite Second Order and Composite Triple Beat Performance for Cascaded Fiber Optic CATV Transmitters", Fiber Integra. Opt., vol.18, pp.131-140 (1999)SCI ­pµe½s¸¹ : NSC88-2215-E008-003

 

63. T. E. Nee, N. T. Yeh, J. M. Lee, J. I. Chyi and C. T. Lee, "High Characteristic Temperature Be-Doped In0.5Ga0.5As Quantum Dot Lasers Grown on GaAs Substrates by Molecular Beam Epitaxy",  J. Crystal Growth, vol. 201, pp. 905-908 (1999)SCI ­pµe½s¸¹ : NSC87-2215-E008-012

 

64. C. T. Lee, L. G. Sheu and F. T. Hwang, "Analysis and Modeling of Nd:Ti:LiNbO3 Fabry-Perot Channel Waveguide Lasers",  J. Appl. Phys., vol. 86, pp. 1191-1195 (1999) SCI ­pµe½s¸¹ : NSC88-2215-E008-003

 

65.  H. Y. Wang and C. T. Lee, ¡§Using Nullors for the Realisation of Current-Mode FTFN-Based Inverse Filters¡¨, Electron. Lett., vol. 35, pp. 1889-1890 (1999)SCI

 

66. H. Y. Wang and C. T. Lee, ¡§Systematic Synthesis of R-L and C-D Immittance Using Single CCIII¡¨,  Int. J. Electron., vol. 87, pp.293-301 (2000) SCI

 

67. Y. T. Lyu, K. L. Jaw, C. T. Lee, C. D. Tsai, Y. J. Lin and Y. T. Cherng, "Ohmic Performance Comparison for Ti/Ni/Au and Ti/Pt/Au on InAs/Graded InGaAs/GaAs Layers", Mater. Chem. Phys., vol. 63, pp. 122-126 (2000) SCI ­pµe½s¸¹ : NSC88-2218-E008-015

 

68. C. T. Lee, C. D. Tsai and H. P. Shiao, "High Performance of Schottky Barriers for Cu Contacted with InGaP/GaAs Layers", Opt. Mater., vol. 14, pp. 251-253 (2000) SCI ­pµe½s¸¹ : NSC86-2215-E008-017

 

69. C. T. Lee, K. C. Shyu, I. J. Lin and H. H. Lin, ¡§GaAs Metal-Semiconductor Field Effect Transistor with InGaP/GaAs Multiquantum Barrier Buffer Layer¡¨, Mater. Sci. Eng. B, vol. 74, pp. 147-151 (2000) SCI ­pµe½s¸¹ : NSC89-2215-E008-030

 

70.  Y. T. Lyu, Y. R. Liu, D. S. Liu and C. T. Lee, ¡§Contributions of Ion-Induced Damage Restoration and Removal in GaN Light Emitting Diodes ¡§J. Chin. Inst. Electric. Eng., vol. 7, pp.173-180 (2000) EI ­pµe½s¸¹ : NSC88-2218-E008-015

 

71. C. T. Lee, J. H. Huang and C. D. Tsai, "Nonalloyed GaAs Metal-Semiconductor Field Effect Transistor",  Solid-State Electron., vol. 44, pp. 143-146 (2000) SCI ­pµe½s¸¹ : NSC88-2218-E008-015

 

72. C. D. Tsai and C. T. Lee, "Passivation Mechanism Analysis of Sulfur-Passivated InGaP Surfaces", J. Appl. Phys., vol. 87, pp. 4230-4233 (2000) SCI ­pµe½s¸¹ : NSC88-2218-E008-015

 

73. M. S. Doong, D. S. Liu and C. T. Lee, "Monolithic Photoreceiver Constructed with InGaP/GaAs/InGaP MSM Photodetectors and Conventional GaAs MESFETS", Solid-State Electron., vol. 44. pp. 1235-1238 (2000) SCI ­pµe½s¸¹ : NSC86-2215-E008-017

 

74. C. T. Lee, and H. W. Kao, "Long Term Thermal Stability of Ti/Al/Pt/Au Ohmic Contacts to n-type GaN", Appl. Phys. Lett., vol. 76, pp. 2364-2366 (2000) SCI ­pµe½s¸¹ : NSC88-2218-E008-015

 

75. H. H. Lu and C. T. Lee, "Novel Measurement Method for Fiber Optical CATV Echo Rating Baseband Parameter at Subscriber", Opt. Eng., vol. 39, pp. 2677-2680 (2000) SCI ­pµe½s¸¹ : NSC88-2215-E008-003

 

76. H. S. Tsai, G. J. Jaw, S. H. Chang, C. C. Cheng, C. T. Lee and H. P. Liu, ¡§Laser-Assisted Plasma-Enhanced Chemical Vapor Deposition of Silicon Nitride Thin Film¡¨, Surf. Coat. Technol., vol.132, pp.158-162 (2000)SCI  :

 

77. Y. J. Lin, C. D. Tsai, Y. T. Lyu and C. T. Lee, ¡§X-ray Photoelectron Spectroscopy Study of (NH4)2Sx-treated Mg-doped GaN Layers¡¨, Appl. Phys. Lett., vol. 77, pp. 687-689 (2000)SCI ­pµe½s¸¹ : NSC89-2215-E008-030

 

78. Y. J. Lin and C. T. Lee, ¡§Investigation of Surface Treatments for Nonalloyed Ohmic Contact Formation in Ti/Al Contacts to N-Type GaN¡¨, Appl. Phys. Lett., vol. 77, pp. 3986-3988 (2000) SCI ­pµe½s¸¹ : NSC90-2215-E008-004

 

79. C. D. Tsai and C. T. Lee, ¡§Thermal Reliability and Performances of InGaP Schottky Contact with Cu/Au and Au/Cu-MSM Photodetectors¡¨, J. Electron. Mater., vol. 30, pp. 59-64  (2001) SCI ­pµe½s¸¹ : NSC89-2215-E008-030

 

80. H. H. Lu, C. T. Lee and C. T. Kuo, "Long-Distance Transmission of Directly Modulated 1550mn AM-VSB CATV Systems",  Fiber Integra. Opt., vol. 20, pp. 279-285  (2001) SCI ­pµe½s¸¹ : NSC89-2215-E008-008

 

81. C. T. Lee, Q. X. Yu, B. T. Tang and H. Y. Lee, ¡§Effects of Plasma Treatment on the Electrical and Optical Properties of Indium Tin Oxide Films Fabricated by Reactive Sputtering¡¨, Thin Solid Films, vol. 386, pp.105-110 (2001) SCI ­pµe½s¸¹ : NSC89-2215-E008-030

 

82. C. T. Lee, H. W. Kao and F. T. Hwang, ¡§Effect of Pt Barrier on Thermal Stability of Ti/Al/Pt/Au in Ohmic Contact with Si-Implanted N-Type GaN Layers¡¨, J. Electron. Mater., vol. 30, pp. 861-865 (2001) SCI ­pµe½s¸¹ : NSC89-2215-E008-030

 

83. J. M. Hsu and C. T. Lee, "Performance Tolerance in Microprism-Type Bent Waveguides", Microw. Opt. Technol. Lett., vol. 29, pp.328-332 (2001)SCI

 

84. H. H. Lu, C. T. Lee and N. C. Wang, "Dispersion Compensation in Externally Modulated Transmission Systems Using Half-Split-Band Technique and Chirped Fiber Grating", J. Opt. Commun., vol. 22, pp. 110-113 (2001)  EI ­pµe½s¸¹ : NSC89-2215-E008-038

 

85. H. H. Lu, C. T. Lee and C. Lin, "A Hybrid DWDM System for CATV and Multimedia Trunking", J. Opt. Commun., vol. 22, pp.114-118 (2001)  EI ­pµe½s¸¹ : NSC89-2215-E008-008

 

86. H. S. Tsai, H. C. Chiu, S. H. Chang, C. C. Cheng,, C. T. Lee and H. P. Liu, "CO2 Laser Assisted Plasma-Enhanced Chemical Vapor Deposition of Silicon Dioxide Thin Film", Jpn. J. Appl. Phys., vol. 40, pp. 3093-3095 (2001)SCI

 

87. B. T. Tang, Q. X. Yu, H. Y. Lee and, C. T. Lee, "Ohmic Performance of ZnO and ITO/ZnO Contacted with N-Type GaN Layer", Mater. Sci. Eng. B, vol. 82, pp. 259-261  (2001)  SCI ­pµe½s¸¹ : NSC89-2215-E008-030

 

88. C. T. Lee, and M.L. Wu, ¡§Apexes-Linked Circle Gratings for Low Loss Waveguide Bends¡¨, IEEE Photon. Technol. Lett., vol. 13, pp. 597-599 (2001) SCI

 

89. H. Y. Wang and C. T. Lee, "Versatile Insensitive Current-Mode Universal Biquad Implementation Using Current Conveyors", IEEE Trans. Circuits and Systems Part II, vol. 48, pp. 409-413 (2001)  SCI

 

90. H. H. Lu, C. T. Lee and C. J. Wang, "Dispersion Compensation in Externally Modulated Transmission Systems Using Chirped Fiber Grating as well as Large Effective Area Fiber", Opt. Eng., vol. 40, pp. 656-657 (2001)  SCI

 

91.  Y. J. Lin and C. T. Lee, ¡§Surface Analysis of (NH4)2Sx-treated InGaN Using X-ray Photoelectron Spectroscopy¡¨, J. Vac. Sci. Technol. B, vol. 19, pp. 1734-1738 (2001)SCI­pµe½s¸¹ : NSC89-2218-E008-033

 

92.  Y. J. Lin, H. Y. Lee, F. T. Hwang  and C. T. Lee, "Low Resistive Ohmic Contact Formation of Surface Treated N-GaN Alloyed at Low Temperature",  J. Electron. Mater.,   vol. 30, pp.  532-537 (2001)SCI ­pµe½s¸¹ : NSC89-2218-E008-033

 

93. C. T. Lee, Q. X. Yu, B. T. Tang, H. Y. Lee and F. T. Hwang, ¡§Investigation of Indium Tin Oxide/Zinc Oxide Multilayer Ohmic Contacts to N-Type GaN Isotype Conjunction¡¨, Appl. Phys. Lett., vol. 78, pp. 3412-3414 (2001) SCI ­pµe½s¸¹ : NSC89-2218-E008-033

 

94. H. H. Lu, H. L. Ma and C. T. Lee, ¡§A Bi-directional Hybrid DWDM System for CATV and OC-48 Trunhing¡¨, IEEE Photon. Technol. Lett., vol. 13, pp. 902-904 (2001)SCI ­pµe½s¸¹ : NSC89-2215-E008-008

 

95. C. T. Lee, and H. Y. Wang, ¡§Minimum Realization for FTFN-Based SRCO¡¨, Electron. Lett., vol. 37, pp. 1207-1208 (2001)SCI

 

96. H. P. Shiao, H. Y. Lee Y. J. Lin, Y. K. Tu and C. T. Lee, ¡§Growth and Performance Study of Aluminum-Free InGaAs/GaAs/InGaAsP Pump Lasers¡¨, Jpn. J.        Appl. Phys., vol. 40, pp. 6384-6390 (2001)SCI

 

97. C. T. Lee, Y. J. Lin and D. S. Liu, ¡§Schottky Barrier Height and Surface State Density of Ni/Au Contacts to (NH4)2Sx-treated N-Type GaN¡¨, Appl. Phys. Lett., vol. 79, pp. 2573-2575 (2001)SCI ­pµe½s¸¹ : NSC89-2218-E008-033

 

98. C. S. Lee, Y. J. Lin and C. T. Lee, ¡§Investigation of Oxidation Mechanism for Ohmic Formation in Ni/Au Contacts to P-Type GaN Layers¡¨, Appl. Phys. Lett., vol. 79, pp. 3815-3817 (2001)SCI ­pµe½s¸¹ : NSC-90-2215-E008-040

 

99. H. H. Lu, H. L. Ma and C. T. Lee, ¡§Bidirectional Transport of  AM-VSB CATV System¡¨, J. Opt. Commun., vol. 23, pp. 22-25 (2002)EI ­pµe½s¸¹ : NSC-90-2215-E008-012

 

100. Y. T. Lyu, C. T. Lee, G. J. Horng, C. Ho, C. Y. Lee and C. S. Wu, ¡§Film Thickness Dependence on Electrical and Optical Properties of PtSi/P-Si(100) Schottky Barrier Detector¡§, Mater. Chem. Phys., vol. 74, pp. 177-181 (2002)SCI ­pµe½s¸¹ : NSC-90-2215-E008-012

 

101. C. T. Lee, N. C. Wang and H. H. Lu, ¡§Lon-Distance Transmission of AM-VSB CATV Systems Using Fabry-Perot Laser Diode and Fiber Bragg Grating¡¨, Fiber Integra. Opt., vol. 21, pp. 43-54 (2002) SCI

 

102. C. T. Lee, C. T. Kuo and H. H. Lu, ¡§Dispersion Compensation in Externally Modulated Transmission System Using Chirped Fiber Grating¡¨, Fiber Integra. Opt., vol. 21, pp. 269-276 (2002)SCI

 

103. D. S. Liu and C. T. Lee, ¡§Investigation of the Thermal Degradation Mechanism for Cu/Au Schottky Contacts to the InGaP Layer¡¨, J. Appl. Phys., vol. 91, pp. 1349-1353 (2002)SCI ­pµe½s¸¹ : NSC-90-2215-E008-41

 

104. H. Y. Lee, I. J. Lin, H. M. Shieh and C. T. Lee, ¡§Investigation of double-delta ¡Vdoped InAlGaP/GaAs/InGaAs field effect transistors¡¨ Solid-State Electron., vol. 46, pp. 1075-1078 (2002)SCI

 

105. C. Y. Lo, C. L. Hsu, Q. X. Yu, H. Y. Lee and C. T. Lee, ¡§Investigation of Transparent and Conductive Undoped Zn2In2O5-x Films Deposited on n-type GaN Layers¡¨, J. Appl. Phys., vol. 92, pp. 274-280 (2002)SCI ­pµe½s¸¹ : NSC-90-2215-E008-040

 

106. H. H. Lu, C. S. Lee, H. L. Ma and C. T. Lee, ¡§Up-Stream Noise for the Internet Access Over Fiber Optical CATV Systems¡¨, J. Opt. Commun., vol. 23,pp. 111-114 (2002).EI ­pµe½s¸¹ : NSC-90-2215-E008-012

 

107. D. S. Liu and C. T. Lee, ¡§Microstructure Evolution and Failure Mechanism for Cu/Au Schottky Contacts to InGaP Layer¡¨, J. Appl. Phys., vol. 92, pp.987-991 (2002)SCI ­pµe½s¸¹ : NSC-90-2215-E008-041

 

108. H. H. Lu, H. L. Ma, C. S. Lee and C. T. Lee, ¡§A DWDM System for 256-QAM Transmission over 4km Multimode Fiber¡¨, Microw. Opt. Technol. Lett., vol. 33, pp. 419-421 (2002).SCI ­pµe½s¸¹ : NSC-90-2215-E008-012

 

109. C. T. Lee, H. Y. Lee and H. H. Lin, ¡§Novel GaAs MESFET¡¦s with InGaP/GaAs Multiple Quantum Barrier Capping and Buffer Layers¡¨, Jpn. J. Appl. Phys., vol. 41, pp. 5937-5940 (2002).SCI ­pµe½s¸¹ : NSC-90-2215-E008-040

 

110. C. T. Lee, Y. J. Lin and C. H. Lin, ¡§Nonalloyed Ohmic Mechanism of TiN Interfacial Layer in Ti/Al Contacts to (NH4)2Sx-treated n-type GaN Layers¡¨, J. Appl. Phys., vol. 92, pp. 3825-3829 (2002).SCI ­pµe½s¸¹ : NSC-90-2215-E008-040

 

111. J. K. Sheu, M. L. Lee, L. S. Yeh, C. J. Kao, C. J. Tun, M. G. Chen, G. C. Chi, S. J. Chang, Y. K. Su and C. T. Lee, ¡§Planar GaN n+-p Photodetectors Formed by Si Implantation into p-GaN¡¨, Appl. Phys. Lett., vol. 81, pp. 4263-4265 (2002). SCI

 

112. C. S. Lee, H. Y. Wang and C. T. Lee, ¡§The Adjoint Realization of Multiple Input/Output Fibers¡¨, J. Chin. Inst. Electric. Eng., vol. 10, pp.183-188 (2003).EI

 

113. H. Y. Lee and C. T. Lee, ¡§The Investigation for Various Treatments of InAlGaP Schottky Diodes¡¨, Opt. Mater., vol. 23, pp. 99-102 (2003).SCI

 

114. H. Y. Lee and C. T. Lee, ¡§Investigation of Degradation Mechanism of Schottky Diodes¡¨, Solid-State Electron., vol.47, pp.831-834 (2003).             SCI

 

115. C. T. Lee, Y. J. Lin and T. H. Lee, ¡§Mechanism investigation of NiOx in Au/Ni/p-type GaN ohmic contacts annealed in air¡¨, J. Electron. Mater., vol. 32, pp. 341-345 (2003). SCI ­pµe½s¸¹: NSC 91-2215-E008-016

 

116. Y. J. Lin, C. S. Lee and C. T. Lee, ¡§Investigation of Accumulated Carrier Mechanism on Sulfurated GaN Layers¡¨, J. Appl. Phys., vol. 93, pp. 5321-5324 (2003). SCI ­pµe½s¸¹: NSC 91-2215-E008-016

 

117. C. T. Lee, H. Y. Lee and H. W. Chen, ¡§GaN MOS Device Using SiO2-Ga2O3 Insulator Grown by Photoelectrochemical Oxidation Method¡¨, IEEE Electron Device Lett., vol. 24, pp. 54-56 (2003).   SCI ­pµe½s¸¹: NSC 91-2215-E008-016

 

118. Y. J. Lin, Z. D. Li, C. W. Hsu, F. T. Chien, C. T. Lee, S. T. Shao and H. C. Chang, ¡§Investigation of Degradation for Ohmic Performance of Oxidized Au/Ni/Mg-doped GaN¡¨, Appl. Phys. Lett., vol. 82, pp. 2817-2819 (2003).  SCI­pµe½s¸¹: NSC91-2218-E035-007

 

119. T. S. Cheng, H. Y. Lee, C. T. Lee, H. Chen and H. T. Lin, ¡§Preparing an Acrylic Ester Copolymer as an Ultrathick Negative Photo Resist¡¨, Mater. Lett., vol. 57, pp. 4578-4582 (2003).SCI

 

120. C. T. Lee, H. W. Chen and H. Y. Lee, ¡§Metal-Oxide-Semiconductor Devices Using Ga2O3 Dielectrics on n-type GaN¡¨, Appl. Phys. Lett., vol. 82, pp. 4304-4306 (2003).SCI ­pµe½s¸¹:NSC 91-2215-E008-016

 

121. C. T. Lee and H. Y. Lee, ¡§Metal-Semiconductor-Metal Photodetectors with InAlGaP Capping and Buffer Layers¡¨, IEEE Electron Device Lett., vol. 24, pp. 532-534 (2003).SCI­pµe½s¸¹:NSC. 91-2215-E008-015 

 

122. Q. X. Yu, B. Xu, Q. H. Wu, Y. Liao, G. Z. Wang, R. C. Fang, H. Y. Lee, and C. T. Lee, ¡§Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode¡¨, Appl. Phys. Lett., Vol. 83, pp. 4713-4715 (2003).SCI   

 

123. D. S. Liu, C. T. Lee and C. W. Wang, ¡§Properties of Cu/Au Schottky contacts on InGaP layer¡¨, J. Appl. Phys., vol. 94, pp. 3805-3809 (2003).SCI   

 

124. C. T. Lee, D. S. Liu and R. W. Deng, ¡§ Diffusion Barrier of Sputtered W film for Cu Schottky Contacts on InGaP Layer¡¨, Thin Solid Films, vol. 468, pp. 216-221 (2004).SCI

 

125. Y. P. Hsu, S. J. Chang, Y. K. Su, J. K. Sheu, C. T. Lee, T. C. Wen, L. W. Wu, C. H. Kuo, C. S. Chang and S. C. Shei, ¡§Lateral Epitaxial Patterned Sapphire InGaN/GaN MQW LEDs¡¨, J. Crystal Growth, vol. 261, pp. 466-470 (2004).SCI

 

126. Y. J. Lin, W. F. Liu and C. T. Lee, ¡§Excimer-laser-induced activation of Mg-doped GaN layers¡¨, Appl. Phys. Lett., vol. 84, pp. 2515-2517 (2004).SCI ­pµe½s¸¹:NSC 92-2215-E035-003

 

127. T.H. Lee, K.H. Tu and C.T. Lee, ¡§Novel structure of arrayed-waveguide grating multiplexer with flat spectral response¡¨, Microw. Opt. Technol. Lett. vol. 41, pp. 444-445 (2004).SCI

 

128. C. S. Chang, S. J. Chang, Y. K. Su, C. T. Lee, Y. C. Lin, W. C. Lai, S. C. Shei, J. C. Ke, and H. M. Lo, ¡§Nitride-based LEDs with textured side walls¡¨, IEEE Photon. Technol. Lett., vol. 16, pp. 750-752 (2004).SCI ­pµe½s¸¹:NSC 89-2215-E006-095

 

129. C. T. Lee and C. H. Lin, ¡§Si nanocrystals embedded in Si suboxide matrix grown by laser-assisted chemical vapor deposition at room temperature¡¨, Jpn. J. Appl. Phys., vol. 43, pp. 2793-2794 (2004).SCI ­pµe½s¸¹:NSC 91-2215-E008-015

 

130. H. Y. Wang, C. T. Lee, C. Y. Huang, ¡§Novel CFA-based Negative Immittance Simulator¡¨, International J. Electrical Engineering, vol. 11, pp.393-398 (2004).EI

 

131. S. J. Chang, L. W. Wu, Y. K. Su, Y. P. Hsu, W. C. Lai, J. M. Tsai, J. K. Sheu and C. T. Lee, ¡§Nitride-based LEDs with 800oC grown P-AlInGaN-GaN double cap layers¡¨, IEEE Photon. Technol. Lett., vol. 16, pp. 1447-1449 (2004).SCI­pµe½s¸¹:NSC 89-2215-E006-095

 

132. T. C. Wen, S. J. Chang, C. T. Lee, W. C. Lai, J. K. Sheu, ¡§Nitride-based LEDs with modulation-doped Al0.12Ga0.88N-GaN superlattice structures¡¨, IEEE Trans. Electron Devices, vol.51, pp. 1743-1746 (2004).SCI

 

133. Y. K. Su, H. C. Yu, S. J. Chang, C. T. Lee, J. S. Wang, A. R. Kovsh, Y. T. Wu, K. F. Lin, C. Y. Huang, ¡§1.3mm InAs quantum dot resonant cavity light emitting diodes¡¨, Mater. Sci. Eng. B, vol. 110, pp. 256-259 (2004).SCI­pµe½s¸¹:NSC 89-2215-E006-095

 

134. C. T. Lee and H. Y. Lee, ¡§Surface Passivated Function of GaAs MSM-PDs Using Photoelectrochemical Oxidation Method¡¨, IEEE Photon. Technol. Lett., vol. 17, pp. 462-464 (2005).SCI­pµe½s¸¹:NSC 92-2215-E008-008 

 

135. C. T. Lee, H. W. Chen, F. T. Hwang, and H. Y. Lee, ¡§Investigation of Ga Oxide films grown on n-type GaN by photoelectrochemical oxidation using He-Cd laser¡¨, J. Electron. Mater., vol. 34, pp.282-286 (2005).SCI ­pµe½s¸¹:NSC 91-2215-E008-016 

 

136. Y. K. Su, P. C. Chang, C. H. Chen, S. J. Chang, C. L. Yu, C. T. Lee, H. Y. Lee, J. Gong, P.C. Chen, C. H. Wang, ¡§Nitride-based MSM UV photodetectors with photo-chemical annealing Schottky contacts¡¨, Solid-State Electron., vol. 49, pp. 459-463 (2005)SCI  

 

137. S. C. Chung, Y. C. Lin, W. T. Lin, J. R. Gong, C. T. Lee, ¡§Effects of Oxided Cu and Co Layers on the Formation of Au Ohmic Contacts to p-GaN¡¨, J. Electrochem. Soc., vol. 152, pp. G367-G371 (2005).SCI ­pµe½s¸¹:NSC 92-2216-E-006-018 

 

138. C. T. Lee, C. H. Lin, T. H. Lee and T. C. Tsai, ¡§Photoluminessence Degrdation and Passivation Mechanism of Si Nanoclusters in Silicon Oxide Matrix¡¨, Jpn. J. Appl. Phys., vol. 44, pp. 4240-4244 (2005).SCI ­pµe½s¸¹:NSC 92-2215-E008-008 

 

139. H. Y. Wang, C. T. Lee, and C. Y Huang, ¡§Characteristic Investigation of New Pathological Elements¡¨, Analog Integr. Circ. Signal Process., vol. 44, pp. 95-102 (2005).SCI   

 

140. S. J. Chang, C. S. Chang, Y. K. Su, C. T. Lee, W. S. Chen, C. F. Shen, Y. P. Hsu, S. C. Shei, and H. M. Lo, ¡§Nitride-Based Flip-Chip ITO LED¡¨, IEEE Trans. Adv. Packaging, vol. 28, pp. 273-277 (2005).SCI ­pµe½s¸¹:NSC 90-2215-E008-043  

 

141. D. S. Liu, C. C. Wu and C. T. Lee, ¡§A Transparent and Conductive Film Prepared by RF Magnetron Cosputtering System at Room Temperature¡¨, Jpn. J. Appl. Phys., vol. 44, pp. 5119-5121 (2005).SCI ­pµe½s¸¹: NSC93-2215-E150-006 

 

142. S. W. Chang, E. Y. Chang, C. S. Lee, K. S. Chen, C. W. Tseng, Y. Y. Tu, C, T. Lee, ¡§A gold-free fully copper-metallized InP heterojunction bipolar transistor using non-alloyed ohmic contact and platinum diffusion barrier¡¨, Jpn. J. Appl. Phys., vol. 44, pp. L899-L900 (2005).SCI   

 

143. D. S. Liu, Y. K. Liao, C. Y. Wu, F. S. Juang, C. T. Lee, ¡§A silicon oxide hard coating deposited on flexible substrate by TMS-PECVD system¡¨, Mater. Sci. Forum, vol. 505-507, pp. 439-444 (2006).SCI ­pµe½s¸¹:NSC 93-2622-E150-036-CC3   

 

144. Y. J. Lin, W. X. Lin, C. T. Lee, F. T. Chien, ¡§Changes in optical and electrical properties and surface recombination velocity of n-type GaN due to (NH4)2Sx treatment¡¨, Solid State Comm., vol. 137, pp. 257-259 (2006).SCI ­pµe½s¸¹:NSC 94-2112-M018-007

 

145. Y. C. Hsieh, E. Y. Chang, S. S. Yeh, C. W. Chang, G. L. Luo, C. Y. Chang, C. T. Lee, ¡§Optimization of the growth of the InGaP etch-stop layer by MOVPE for InGaP/GaAs HBT device application¡§, J. Crystal Growth, vol. 289, pp. 96-101 (2006).SCI

 

146. Y. J. Lin, W. X. Lin, C. T. Lee, and H. C. Chang, ¡§Electronic Transport and Schottky Barrier Heights of Ni/Au Contacts on n-Type GaN Surface with and without a Thin Native Oxide layer¡¨, Jpn. J. Appl. Phys., vol. 45, pp. 2505-2508 (2006). SCI ­pµe½s¸¹:NSC 94-2112-M018-007

 

147. Y. J. Lin, C. T. Lee and H. C. Chang, ¡§Changes in activation energies of donors and carrier concentration in Si-doped n-type GaN due to (NH4)2Sx treatment¡¨, Semicon. Sci. Technol., vol. 21, pp. 1167-1171 (2006).SCI ­pµe½s¸¹:NSC 95-2112-M-018-002  

 

148.  C. S. Lee, Y. C. Lien, E. Y. Chang, H. C. Chang, S. H. Chen, C. T. Lee, L. H. Chu, S. W. Chang, Y. C. Hsieh, ¡§Copper-airbridged low-noise GaAs PHEMT with Ti/WNx/Ti diffusion barrier for high-frequency applications¡¨, IEEE Trans. Electron Devices, vol. 53, pp. 1753-1758 (2006).SCI     

 

149. T. H. Lee, F. T. Hwang, W. T. Shay, C. T. Lee, ¡§Electromagnetic field sensor using Mach-Zehnder waveguide modulator¡¨, Micro. Opt. Technol. Lett., vol. 48, pp. 1897-1899 (2006).SCI ­pµe½s¸¹:NSC 94-2215-E-006-009  

 

150. P. S. Chen, C. T. Lee, ¡§Investigation of Ohmic mechanism for chlorine-treated p-type GaN using x-ray photoelectron spectroscopy¡¨, J. Appl. Phys., vol. 100, 044510 (2006).SCI ­pµe½s¸¹: NSC 94-2215-E006-013

 

151. C. T. Lee, U. Z. Yang, C. S. Lee, P. S. Chen, ¡§White Light Emission of Monolithic Carbon-Implanted InGaN¡VGaN Light-Emitting Diodes¡¨, IEEE Photon. Technol. Lett., vol. 18, pp.  2029- 2031 (2006).SCI ­pµe½s¸¹: NSC 94-2215-E006-013

 

152. C. Y. Lu, S. J. Chang, S. P. Chang, C. T Lee, C. F. Kuo, H. M. Chang, Y. Z. Chiou, C. L. Hsu, and I C. Chen, ¡§Ultraviolet photodetectors with ZnO nanowires prepared on ZnO:Ga/glass templates¡¨, Appl. Phys. Lett., vol.  89, 153101 (2006).SCI

 

153. C. L. Yu, S. J. Chang, P. C. Chang, Y. C. Lin, C. T. Lee, ¡§Nitride-based ultraviolet Schottky barrier photodetectors with LT-AlN cap layers¡¨, Superlattices and Microstructures, vol. 40, pp. 470-475 (2006).SCI  ­pµe½s¸¹: NSC 93-2215-E006-030 and NSC 93-2215-E006-010

 

154. D. S. Liu, C. C. Wu, and C. T. Lee, ¡§A transparent electrode prepared by co-sputtering system¡¨, International J. Microwave and Optic. Technol., vol. 1, pp. 502-505 (2006).EI ­pµe½s¸¹: NSC93-2215-E-150-006

 

155. C. F. Shen, S. J. Chang, T. K. Ko, C. T. Kuo, S. C. Shei, W. S. Chen, C. T. Lee, C. S. Chang, and Y. Z. Chiou, ¡§Nitride-Based Light Emitting Diodes With Textured Sidewalls and Pillar Waveguides¡¨, IEEE Photon. Technol. Lett., vol. 23, pp. 2517-2519 (2006).SCI

 

156. T. H. Lee, F. T. Hwang, C. T. Lee, and H. Y. Lee, ¡§Investigation of LiNbO3 thin films grown on Si substrate using magnetron sputter¡§, Mater. Sci. Eng. B, vol. 136, pp. 92-95, (2007).SCI ­pµe½s¸¹: NSC 94-2215-E006-009

 

157. P. S Chen, T. H. Lee, L. W. Lai and C. T. Lee, ¡§Schottky mechanism for Ni/Au contact with chlorine-treated n-type GaN layer¡¨, J. Appl. Phys., vol. 101, 024507 (2007)SCI ­pµe½s¸¹: NSC 94-2215-E006-013

 

158. Y. C. Lien, S. H. Chen, E. Y. Chang, C. T. Lee, L. H. Chu, and C. Y. Chang, ¡§Fabrication of 0.15-£gm £F-Shaped Gate In0.52Al0.48As/In0.6Ga0.4As Metamorphic HEMTs Using DUV Lithography and Tilt Dry-Etching Technique¡¨, IEEE Electron Device Lett., vol. 28, pp. 93-95 (2007).SCI ­pµe½s¸¹: NSC 95-2752-E-009-001-PAE and 94-EC-17-A-05-S1-020

 

159. P. S. Chen, C. S. Lee, J. T. Yan, and C. T. Lee, ¡§Performance Improvement and Mechanism of Chlorine-Treated InGaN¡VGaN Light-Emitting Diodes¡¨, Electrochem. Solid State Lett., vol. 10, pp. H165-H167 (2007).SCI ­pµe½s¸¹: NSC 95-2221-E006-315

 

160. P. F. Lin, C. Y. Ko, W. T. Lin, and C. T. Lee, ¡§Effects of processing parameters on ultraviolet emission of In-doped ZnO nanodisks grown by carbothermal reduction¡¨, Mater. Lett., vol. 61, pp. 1767-1770 (2007).SCI ­pµe½s¸¹: NSC94-2216-E-006-025

 

161. T. C. Tsai, L. Z. Yu, and C. T. Lee, ¡§Electroluminescence emission of crystalline silicon nanoclusters grown at a low temperature¡¨, Nanotechnol., vol. 18, 275707 (2007)  SCI

 

162. H. Y. Lee, K. H. Pan, C. C. Lin, Y. C. Chang, F. J. Kao, and C. T. Lee, ¡§Current spreading of III-Nitride light-emitting diodes using plasma treatment¡¨, J. Vac. Sci. Technol. B, vol. 25, pp. 1280-1283 (2007).SCI ­pµe½s¸¹: NSC94-2215-E-006-011

 

163. L. H. Huang and C. T. Lee, ¡§Investigation and Analysis of AlGaN MOS Devices with an Oxidized Layer Grown Using the Photoelectrochemical Oxidation Method¡¨, J. Electrochem. Soci., vol. 154, pp. H862-H866 (2007)SCI

 

164. D. S. Liu, C. S. Sheu, and C. T. Lee, ¡§Aliminum-nitride codoped zinc oxide films prepared using a radio-frequency magnetron cosputtering system¡¨, J. Appl. Phys., vol. 102, 033516 (2007)SCI ­pµe½s¸¹: NSC94-2218-E-150-004

 

165. C. T. Lee, J. H. Cheng, and H. Y. Lee, ¡§Crystalline SiGe films grown on Si substrates usinglaser-assisted plasma-enhanced chemical vapor deposition at low temperature¡¨, Appl. Phys. Lett., vol. 91, 091920 (2007).SCI

 

166. T. H. Lee, P. I Wu, and C. T. Lee, ¡§Intergraded LiNbO3 Electrooptical Electromagnetic Field Sensor¡¨, Microwave Opt. Technol. Lett., vol. 49, pp. 2312-2314 (2007)SCI ­pµe½s¸¹: NSC95-2221-E-060-312

 

167. Y. Zhang, D. J. Chen, and C. T. Lee, ¡§Free exciton emission and dephasing in individual ZnO nanowires¡¨, Appl. Phys. Lett., vol. 91, 161911 (2007).SCI

 

168. Y. C. Chang, F. Y. Chou, P. H. Yeh, H. W. Chen, S. H. Chang, Y. C. Lan, T. F. Guo, T. C. Tsai and C. T. Lee, ¡§Effects of surface Plasmon responant scattering on the power conversion efficiency of organic thin-film solar cells¡¨, J. Vac. Sci. Technol. B, vol. 25, pp. 1899-1902, (2007).SCI  ­pµe½s¸¹: NSC 96-ET-7-006-002-ET and NSC 95-ET-7-006-002-ET

 

169. R. W. Chuang, R. X. Wu, L. W. Lai, and C. T. Lee, ¡§ZnO-on-GaN heterojunction light-emitting diode grown by vapor cooling condensation technique¡¨, Appl. Phys. Lett., vol. 91, 231113 (2007).SCI 

 

170. K. S. Chen, E. Y. Chang, C. C. Lin, S. S. Lee, W. C. Huang and C. T. Lee, ¡§A Cu-based alloyed Ohmic contact system on n-type GaAs¡§, Appl. Phys. Lett., vol. 91, 233511 (2007).SCI  ­pµe½s¸¹: NSC 95-2752-E009-001-PAE

 

171. K. L. Lin, E. Y. Chang, Y. L. Hsiao, W. C. Huang, T. Li, D. Tweet, J. S. Maa, S. T. Hsu, and C. T. Lee, ¡§Growth of GaN film on 150nm Si (111) using multilayer AlN/AlGaN buffer by metal-organic vapor phase epitaxy method¡§, Appl. Phys. Lett., vol. 91, 222111 (2007).SCI  ­pµe½s¸¹: NSC 95-2752-E009-001-PAE

 

172. L. W. Lai, H. Y. Lee, J. H. Cheng and  C. T. Lee, ¡§Investigation of  laser-assisted microcrystalline SiGe films deposited at low temperature¡§, J. Electronic Mater., vol. 37, pp. 167-171 (2008).SCI

 

173. L. H. Chu, E. Y. Chang, Y. H. Wu, J. C. Huang, Q. Y. Chen, W. K. Chu, H. W. Seo, and C. T. Lee, ¡§Interfacial reactions of Pt-based Schottky contacts on InGaP¡¨, Appl. Phys. Lett., vol. 92, 082108 (2008). SCI ­pµe½s¸¹: NSC 95-2752-E-009-001-PAE and 95-EC-17-A-05-S1-020

 

174. D. S. Liu, C. S. Sheu, C. T. Lee, C. H. Lin, ¡§Thermal stability of indium tin oxide thin films co-sputtered with zinc oxide¡¨, Thin Solid Films, vol. 516, pp. 3196-3203 (2008)SCI ­pµe½s¸¹: NSC94-2218-E150-004

 

175. L. H. Huang, S. H. Yeh, C. T. Lee, H. Tang, J. Bardwell and J. B. Webb, ¡§AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors using oxide insulator grown by photoelectrochemical oxidation method¡¨, IEEE Electron Devices Lett., vol. 29, pp. 284-286 (2008)SCI

 

176. Y. J. Lin, C. T. Lee, S. S. Chang and H. C. Chang, ¡§Electronic transport and Schottky barrier height of Ni contact on p-type GaN¡¨, J. Phys. D: Appl. Phys., vol. 41, 095107 (2008)SCI ­pµe½s¸¹: NSC96-2112-M-018-001

 

177. C. I Kuo, H. T. Hsu, Edward Y. Chang, C. Y. Chang, Y. Miyamoto, S. Datta, M. Radosavljevic, G. W. Huang, and C. T. Lee, ¡§RF and logic performance improvement of In0.7Ga0.3As/InAs/In0.7Ga0.3As composite-channel HEMT using gate-sinking technology¡¨, IEEE Electron Device Lett., vol. 29, pp. 290-293 (2008).SCI ­pµe½s¸¹: NSC 96-2752-E-009-001-PAE

 

178. D. S. Liu, F. C. Tsai, C. T. Lee, and C. W. Sheu, ¡§Properties of zinc oxide films cosputtered with aluminum at room temperature¡¨, Jpn. J. Appl. Phys., vol. 47, pp. 3056-3062 (2008). SCI ­pµe½s¸¹: NSC94-2218-E150-004

 

179. L. W. Lai and C. T. Lee, ¡§Investigation of optical and electrical properties of ZnO thin films¡¨, Mater. Chemi. and Phys., vol. 110, pp. 393-396 (2008).SCI­pµe½s¸¹: NSC95-2221-E006-315

 

180. C. T. Lee, C. C. Lin, H. Y. Lee, and P. S. Chen, ¡§Changes in surface state density due to chlorine treatment in GaN Schottky ultraviolet photodetectors¡¨, J. Appl. Phys., vol. 103, 094504 (2008).SCI

 

181. C. H. Wen, S. Y. Chu, Y. Y. Shin, C. T. Lee, Y. D. Juang, ¡§Red, green and blue photoluminescence of erbium doped potassium tantalate niobate polycrystalline¡¨, J. Alloy Comp., Vol. 459, pp. 107-112 (2008).SCI­pµe½s¸¹: NSC 93-2216-E-006-035

 

182. Y. J. Lin, P. H. Wu, C. L. Tsai, C. J. Liu, Z. R. Lin, H. C. Chang C. T. Lee, H. C. Chang, Z. R. Lin, and K. Y. Jeng, ¡§Mechanisms of enhancing band-edge luminescence of Zn1-xMgxO prepared by the sol-gel method¡¨, J. Phys. D: Appl. Phys., vol. 41, 125103 (2008).SCI­pµe½s¸¹: NSC 96-2112-M-018-001

 

183. Y. J. Lin, P. H. Wu, C. L. Tsai, C. J. Liu, Z. R. Lin, H. C. Chang, and C. T. Lee, ¡§Effects of Mg incorporation on the optical properties of ZnO prepared by the sol-gel method¡¨, J. Appl. Phys., Vol. 103, 113709 (2008).SCI­pµe½s¸¹:  NSC96-2112-M-018-001

 

184. C. Y. Lu, E. Y. Chang, J. C. Huang, C. T. Chang, M. H. Lin , C. T. Lee, ¡§Enhancement of the Schottky barrier height using a nitrogen-rich tungsten nitride thin film for the Schottky contacts on AlGaN/GaN heterostructures¡¨, J. Electronic Mater., vol. 37, pp. 624-627 (2008)SCI 

 

185. K. C. Sahoo, C. W. Chang , Y. Y. Wong , T. L. Hsieh , E. Y. Chang , and C. T. Lee, ¡§Novel Cu/Cr/Ge/Pd ohmic contacts on highly doped n-GaAs¡¨, J. Electronic Mater., vol. 37, pp. 901-904 (2008)SCI­pµe½s¸¹:  NSC96-2752-E-009-001-PAE

 

186. L. H. Huang, S. H. Yeh, C. T. Lee, ¡§High frequency and low frequency noise of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with gate insulator grown using photoelectrochemical oxidation method ¡§Appl. Phys. Lett., vol. 93, 043511 (2008). SCI­pµe½s¸¹:  NSC96-2221-E-006-282-MY3.

 

187. Y. J. Lin, F. T. Chien, C. T. Lee, C. S. Lin and Y. C. Liu, ¡§Nonalloyed ohmic contact formation in Ti/Al contacts to n-type AlGaN¡¨, J. Phys. D: Appl. Phys., vol. 41  175105 (2008)SCI­pµe½s¸¹: NSC 96-2112-M-018-001

 

188. L. W. Lai, C, H, Liu, C. T. Lee, L. R. Lou, W. Y. Yeh and M. T. Chu, ¡§Investigation of silicon nanoclusters embedded in ZnO matrices deposited by cosputtering system¡¨, J. Mater. Res., vol. 23, pp. 2506-2511 (2008)SCI

 

189. H. Y.  Lee, X. Y. Huang, and C. T. Lee, ¡§Light output enhancement of GaN-based roughened LEDs using bias-assisted photoelectrochemical etching method¡¨, J. Electrochem. Soci., vol. 155, pp. H707-H709 (2008)SCI­pµe½s¸¹: NSC-96-2221-E-006-282-MY3

 

190. C. T. Lee and L. H. Huang, ¡§Investigation and fabrication of AlGaN/GaN MOS-HEMTs with gate insulators grown by photoelectrochemical oxidation method¡¨, Compound Semiconductors and Nitrides and Wide-bandgap Semiconductors for Sensors, Photonics and Electronics, vol. 16, no. 7, pp. 103-109 (2008)EI­pµe½s¸¹:  NSC96-2221-E-006-282-MY3.

 

191. T. H. Lee, W. T. Shay, and C. T. Lee, ¡§Integrated electrooptical electromagnetic field sensor with Mach-Zehnder waveguide modulator and annular antenna¡¨, Microwave Opt. Technol. Lett., vol. 50, pp. 3125-3128 (2008)SCI­pµe½s¸¹: NSC96-2221-E-006-097-MY3

 

192. H. Y. Lee, T. H. Lee, W. T Shay, C. T. Lee, ¡§Reflective type segmented electrooptical electric field sensor¡¨, Sens. Actuator A-Phys., vol. 148, pp. 355-358 (2008).

SCI­pµe½s¸¹: NSC96-2221-E-006-097-MY3

 

193. L. W. Lai, J. T. Chen, L. R. Lou, C. H. Wu and C. T. Lee, ¡§ Performance Improvement of (NH4)2Sx-Treated III-V Compounds Multijunction Solar Cell Using Surface Treatment¡¨, J. Electrochem. Soci, vol.155, pp. B1270-B1273 (2008) SCI­pµe½s¸¹: NSC96-2623-7-006-017-NU

 

194. C. T. Lee, Y. F. Chen and C. H. Lin, ¡§Phase-separated Si nanoclusters form Si oxide matrix grown by laser-assisted chemical vapor deposition¡¨, Nanotechnol., vol. 20, 025702 (2009).SCI

 

195. L. Z. Yu, X. Y. Jiang, X. L. Zhang, L. R. Lou, and C. T. Lee, ¡§Investigation of Főrster-type energy transfer in organic light-emitting devices with 4-(dicyanomethylene)-2-t-butyl-6-(1, 1, 7, 7-tetramethy ljulolidin-4-yl-vinyl)-4H-pyran doped cohost emitting layer¡¨, J. Appl. Phys., vol. 105, 013105 (2009). SCI

 

196. L. H. Huang, K. C. Kan, and C. T. Lee, ¡¨Analysis of Oxidized p-GaN Films Directly Grown Using Bias-Assisted Photoelectrochemical Method¡¨, J. Electronic Mater., vol. 38, pp. 529-532  (2009)SCI­pµe½s¸¹: NSC-96-2221-E-006-282-MY3

 

197. C. T. Chang, S. K. Hsiao, E. Y. Chang, C. Y. Lu, J. C. Huang, and C. T. Lee, ¡§Changes of electrical characteristics for AlGaN/GaN HEMTs under uniaxial tensile strain¡¨, IEEE Electron Devices Lett., vol. 30, pp.213-215 (2009). SCI­pµe½s¸¹: NSC 97-2221-E009-156-MY2 and 97-EC-17-A-05-S1-020

 

198. Y. Zhang and C. T. Lee, ¡§Site-controlled Growth and Field Emission Properties of ZnO Nanorod Arrays¡¨, J. Phys. Chem. C, vol. 113, pp 5920-5923 (2009)SCI

 

199. Y. Y. Wong, E. Y. Chang, T. H. Yang, J. R. Chang, Y. C. Chen. J. T. Ku, C. T. Lee, C. W. Chang, ¡§The effect of AlN buffer growth parameters on the defect structure of GaN grown on sapphire by plasma-assisted molecular beam epitaxy¡¨, J. Crystal Growth, vol. 311, pp. 1487-1492 (2009).SCI ­pµe½s¸¹: NSC 95-EC-17-A-05-S1-020, NSC95-2752- E-009-001-PAE and NSC96-2221-E-009-236

 

200. C. T. Lee, Y. H. Chou, J. T. Yan, and H. Y. Lee, ¡§Light enhancement of Al nanoclusters embedded in Al-doped ZnO films of GaN-based light-emitting diodes¡¨, J. Vac. Sci. Technol. B, vol. 27, pp. 1901-1903 (2009).SCI

 

201. L. W. Lai, J. T. Yan, C. H. Chen, L. R. Lou and C. T. Lee, ¡§ Nitrogen function of aluminum-nitride codoped ZnO films deposited using cosputter system¡¨, J. Mater. Res., vol. 24, No. 7, pp. 2252-2258 (2009).SCI­pµe½s¸¹:  NSC97-2623-7-006-002-NU

 

202. Y. J. Lin, B. C. Huang, Y. C. Lien, C. T. Lee, C. L. Tsai and H. C. Chang, ¡§Capacitance¡Vvoltage and current¡Vvoltage characteristics of Au Schottky contact on n-type Si with a conducting polymer¡¨, J. Phys. D: Appl. Phys., vol. 42, 165104 (2009).SCI­pµe½s¸¹:  97-2628-M-018-001-MY3

 

203. T. H. Lee, W. T. Shay and C. T. Lee, ¡§Electromagnetic source azimuth measurement using electrooptical electromagnetic field probe¡¨, IEEE Photon. Technol. Lett., vol. 21, pp.1163-1165 (2009).SCI­pµe½s¸¹:  96-2221-E-006-097-MY3

 

204. S. C. Tsai, C. H. Cheng, N. Wang, Y. L. Song, C. T. Lee, and C. S. Tsai, ¡§Silicon-based megahertz ultrasonic nozzles for production of monodisperse micrometer-sized droplets¡¨, IEEE Trans. Ultrason. Ferroelectr. Freq. Control, vol. 56, pp. 1968-1979 (2009).SCI

 

205. L. Z. Yu and C. T. Lee, ¡§Investigation of three-terminal organic-based devices with memory effect and negative differential resistance¡¨, Appl. Phys. Lett., vol. 95, 103305 (2009).SCI

 

206. C. T. Chang, S. K. Hsiao, E. Y. Chang, Y. L. Hsiao, J. C. Huang, C. Y. Lu, H. C. Chang, K. W. Cheng, and C. T. Lee, ¡§460-nm InGaN-based LEDs grown on fully inclined hemisphere-shape-patterned sapphire substrate with submicrometer spacing¡¨, IEEE Photon. Technol. Lett., vol. 21, pp.1366-1368 (2009).SCI­pµe½s¸¹: NSC98-2923-E-009-002-MY3

 

207. J. T. Yan, and C. T. Lee, ¡§Improved detection sensitivity of Pt/b-Ga2O3/GaN hydrogen sensor diode¡¨, Sens. Actuators B, vol. 143, pp. 192-197 (2009).SCI

 

208. C. Y. Lu, E. Y. Chang, J. C. Huang, C. T. Chang and C. T. Lee, ¡§Stable AlGaN/GaN high electron mobility transistors with tungsten nitride gate metallization¡¨, Electron. Lett., vol. 45,  1348-U104 (2009).SCI­pµe½s¸¹:97-2221-E-009-156-MY2 and 97-EC-17-A-05-S1-020

 

209. H. Y. Lee, Y. H. Chou, C. T. Lee,  W. Y. Yeh, and M. T. Chu, ¡§Mechanisms of lighting enhancement of Al nanoclusters-embedded Al-doped ZnO film in GaN-based light-emitting diodes¡¨, J. Appl. Phys., vol. 107, 014503 (2010).SCI

 

210. C. T. Lee, Y. H. Lin, L. W. Lai, and L. R. Lou, ¡§Mechanism investigation of p-i-n ZnO-based light-emitting diodes¡¨, IEEE Photon. Technol. Lett., vol. 22, pp.30-32 (2010).SCI­pµe½s¸¹: NSC-98-NU-E-006-018

 

211. J. T. Yan, C. H. Chen, S. F. Yen, and C. T. Lee, ¡§Ultraviolet ZnO Nanorod/P-GaN-Heterostructured Light-Emitting Diodes¡¨, IEEE Photon. Technol. Lett., vol. 22, pp.146-148 (2010).SCI

 

212. C. T. Lee, L. Z. Yu, and H. Y. Liu, ¡§Optical performance improvement mechanism of multimode-emitted white resonant cavity organic light-emitting diodes¡¨, IEEE Photon. Technol. Lett. vol. 22, pp. 272-274 (2010).SCI

 

213. Y. L. Chiou, L. H. Huang, and C. T. Lee, ¡§Photoelectrochemical Function in Gate-Recessed AlGaN/GaN Metal¡VOxide¡VSemiconductor High-Electron-Mobility Transistors¡¨, IEEE Electron Device Lett., vol. 31, pp. 183-185 (2010)SCI­pµe½s¸¹: NSC-096-2221-E-006-282-MY3

 

214. Y. J. Lin, J. A. Chu, Y. C. Su, C. T. Lee, H. C. Chang, ¡§Improved ohmic contacts on pentacene based on Au with ultraviolet irradiation treatment¡¨, Thin Solid Films, vol. 518, pp. 2707-2709 (2010). SCI­pµe½s¸¹: NSC 97-2628-M-018-001-MY3

 

215. L. H. Hsu, W. C. Wu, E. Y. Chang, H. Zirath, Y. C. Wu, C. T. Wang, and C. T. Lee, ¡§Design and Fabrication of 0/1-Level RF-Via Interconnect for RF-MEMS Packaging Applications¡¨, IEEE Trans. Adv. Packag., vol. 30, pp. 30-36 (2010). SCI­pµe½s¸¹: NSC 96-2752-E-009-001-PAE

 

216. Y. L. Chiou, L. H. Huang and C. T. Lee, ¡§GaN-based p-type metal-oxide¡Vsemiconductor devices with a gate oxide layer grown by a bias-assisted photoelectrochemical oxidation method¡¨, Semicond. Sci. Technol., vol. 25, 045020 (2010).SCI­pµe½s¸¹:NSC-96-2221-E-006-282-MY3

 

217. C. T. Lee, ¡§Fabrication Methods and Luminescent Properties of ZnO Materials for Light-Emitting Diodes¡¨, Mater., vol. 3, pp. 2218-2259 (2010). (Review paper)SCI

 

218. S. Dalui, C. C. Lin, H. Y. Lee, S. F. Yen, Y. J. Lee, and C. T. Lee, ¡§Electroluminescence from Solution Grown n-ZnO Nanorod/p-GaN-Heterostructured Light Emitting Diodes¡¨, J. Electrochemi. Sci., vol. 157, pp. H516-H518 (2010).SCI

 

219. Y. C. Wu, Y. C. Lin, E. Y. Chang, C. T. Lee, C. C. Kei, C. T. Chang, and H. T. Hsu, ¡§ An Al2O3 AlGaAs/InGaAs Metal-Oxide-Semiconductor PHEMT SPDT Switch with Low Control Currents for Wireless Communication Applications¡¨, Electrochem. Solid State Lett., vol. 13, pp. H219-H221, (2010).SCI­pµe½s¸¹: NSC 98-2120-M-009-010 and NSC97-2221-E-009-156-MY2

 

220. C. T. Lee, J. T. Yan, ¡§Sensing Mechanisms of Pt/b-Ga2O3/GaN Hydrogen Sensor Diodes¡¨, Sens. Actuators B, vol. 147 pp. 723¡V729, (2010).SCI­pµe½s¸¹: NSC96-2221-E-006-282-MY3

 

221. C. T. Lee, L. H. Huang, and Y. L. Chiou, ¡§Flicker Noises of AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors¡¨, J. Electrochemi. Sci., vol. 157, pp. H734-H738, (2010).SCI­pµe½s¸¹: NSC-96-2221-E-006-282-MY3

 

222. C. Y. Tseng, C. S. Lee, H. Y. Shin, and C. T.. Lee, ¡§Investigation of Surface Passivation on GaAs-Based Compound Solar Cell Using Photoelectrochemical Oxidation Method¡¨, J. Electrochemi. Sci., vol. 157, pp. H779-H782, (2010).SCI­pµe½s¸¹: NSC-98-2120-M-006-003 and NSC-98-3114-E-006-004-CC2

 

223. C. C. Lin and C. T. Lee, ¡§Enhanced Light Extraction of GaN-Based Light Emitting Diodes Using Nanorod Arrays¡¨, Electrochem. Solid State Lett., vol. 13, pp. H278-280, (2010).SCI

 

224. L. Z. Yu, H. C. Chen and C. T. Lee, ¡§Memory mechanisms of vertical organic memory transistors¡¨, Appl. Phys. Lett., vol. 96, 233301 (2010).SCI

 

225. C. T. Lee and J. T. Yan, ¡§Investigation of a Metal¡VInsulator¡VSemiconductor Pt/Mixed Al2O3 and Ga2O3 Insulator/AlGaN Hydrogen Sensor¡¨, J. Electrochemi. Sci., vol. 157, pp. J281-J284, (2010).SCI­pµe½s¸¹: NSC-96-2221-E-006-282-MY3.

 

226. C. L. Tsai, M. S. Wang, Y. H. Chen, H. C. Chang, C. J. Liu, C. T. Lee, Y. T. Shih, H. J. Huang, and Y. J. Lin, ¡§Effects of Li content on the structural, optical, and electrical properties of LiZnMgO films¡¨, J. Appl. Phys. vol. 107, p .113717, (2010)             SCI­pµe½s¸¹: NSC-97-2628-M-018-001-MY3

 

227. Y. L. Chiou, C. S. Lee, and C. T. Lee, ¡§AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with ZnO gate layer and (NH4)2Sx surface treatment¡¨, Appl. Phys. Lett., vol. 97, 032107, (2010)SCI

 

228. C. T. Lee, L. Z. Yu, and H. C. Chen, ¡§Memory bistable mechanisms of organic memory devices¡¨, Appl. Phys. Lett., vol. 97, 043301, (2010)SCI

 

229. C. C. Lin and C. T. Lee, ¡§Enhanced Light Extraction Mechanism of GaN-Based Light-Emitting Diodes Using Top Surface and Side-Wall Nanorod Arrays¡¨, IEEE Photon. Technol. Lett., vol. 22, pp. 1132-1134, (2010).SCI

 

230. C. T. Lee, T. S. Lin, and H. Y. Lee, ¡§Mechanisms of Low Noise and High Detectivity of p-GaN/i-ZnO/n-ZnO:Al-Heterostructured Ultraviolet Photodetectors¡¨, IEEE Photon. Technol. Lett., vol. 22, pp. 1117-1119, (2010)             SCI

 

231. S. Dalui, C. C. Lin, H. Y. Lee, C. H. Chao and C. T. Lee, ¡§Light Output Enhancement of GaN-Based Light-Emitting Diodes Using ZnO Nanorod Arrays Produced by Aqueous Solution Growth Technique¡¨, IEEE Photon. Technol. Lett., vol. 22, pp. 1220-1222, (2010).             SCI

 

232. C. C. Lin and C. T. Lee, ¡§GaN-Based Resonant-Cavity Light-Emitting Diodes with Top and Bottom Dielectric Distributed Bragg Reflectors¡¨, IEEE Photon. Technol. Lett., vol. 22, pp. 1291-1293, (2010).             SCI

 

234. B. T. Lai, C. T. Lee, J. D. Hong, S. L. Yao, and D. S. Liu, ¡§Zinc Oxide-Based Schottky Diode Prepared Using Radio-Frequency Magnetron Cosputtering System¡¨, Jpn. J. Appl. Phys., vol. 49, 085501, (2010)SCI­pµe½s¸¹:NSC96-2221-E-150-072-MY3

 

235. H. Y. Lee, C. T. Lee and J. T. Yan, ¡§Emission mechanisms of passivated single n-ZnO:In/i-ZnO/p-GaN-heterostructured nanorod light-emitting diodes¡¨, Appl. Phys. Lett., vol. 97, 111111, (2010).SCI

 

236. H. Y. Lee, S. D. Xia, W. P. Zhang, L. R. Lou, J. T. Yan, and C. T. Lee, ¡§Mechanisms of high quality i-ZnO thin films deposition at low temperature by vapor cooling condensation technique¡¨, J. Appl. Phys., vol. 108, 073119 (2010).SCI

 

237. T. C. Tsai, D. S. Liu, L. R. Lou, and C. T. Lee, ¡§Structure and photoluminescence of Ge nanoclusters embedded in GeOx films deposited using laser assistance at low temperature¡¨, J. Appl. Phys., vol. 108, 074318 (2010).SCI

 

238. C. T. Lee, Y. L Chiou and C. S. Lee, ¡§AlGaN/GaN MOS-HEMTs With Gate ZnO Dielectric Layer¡¨, IEEE Electron Device Lett., vol. 31, pp. 1220-1223, (2010)SCI

 

239. Y. L Chiou and C. T. Lee, ¡§(NH4)2Sx-Treated AlGaN/GaN MOS-HEMTs with ZnO Gate Dielectric Layer¡¨, J. Electrochemi. Sci., vol. 158, pp. H156-159, (2011)SCI

 

240. C. T. Lee and W. H. Huang, ¡§Integrated Azimuthal LiNbO3 Electrooptical Electromagnetic Field Sensor with Mach-Zehnder Waveguide Modulator and Micro Multi-Annular Antenna¡¨, Microw. Opt. Technol. Lett., vol. 53, pp. 565-567, (2011).SCI­pµe½s¸¹:NSC-96-2221-E-006-097-MY3

 

241. C. T. Lee and J. T. Yan, ¡§Ultraviolet Electroluminescence From ZnO-Based n-i-p Light-Emitting Diodes¡¨, IEEE Photon. Technol. Lett., vol. 23, pp. 353-355, (2011).SCI­pµe½s¸¹:NSC99-2221-E006-106-MY3

 

242. Y. L. Chiou, C. S. Lee, and C. T. Lee, ¡§Frequency and noise performances of photoelectrochemically etched and oxidized gate-recessed AlGaN/GaN MOS-HEMTs,¡¨, J. Electrochemi. Soc., vol. 158, no. 5, pp. H477-H481, (2011).SCI­pµe½s¸¹:NSC99-2221-E006-208-MY3

 

243. T. C. Tsai, L. R. Lou, and C. T. Lee, ¡§Influence of Deposition Conditions on Silicon Nanoclusters in Silicon Nitride Films Grown by Laser-Assisted CVD Method¡¨, IEEE Tran. Nanotechnol., vol. 10, pp. 197-202, (2011).SCI

 

244. C. T. Lee, Y. S. Chiu, S. C . Ho, and Y. J. Lee, ¡§Investigation of a Photoelectrochemical Passivated ZnO-Based Glucose Biosensor¡¨, Sensors, vol. 11, pp. 4648-4655, 2011. SCI­pµe½s¸¹:NSC99-2221-E006-208-MY3

 

245. C. Y. Tseng, C. K. Lee and C. T. Lee, ¡§Performance enhancement of III¡VV compound multijunction solar cell incorporating transparent electrode and surface treatment¡¨, Prog. Photovolt: Res. Appl., vol. 19, pp. 436-441, 2011. SCI­pµe½s¸¹:98-D0204-2, NSC-98-2120-M-006-003, and NSC-98-3114-E-006-004-CC2

 

246. S. L. Yao, J. D. Hong, C. T. Lee, C. Y. Ho, and D. S. Liu, ¡§Determination of activation behavior in annealed Al¡VN codoped ZnO Films¡¨, J. Appl. Phys., vol. 109, 103504, (2011). SCI

 

247. M. P. Chang, M. H. Chiang, W. T. Lin, and C. T. Lee, ¡§Growth of ZnGa2O4 nanowires on a ZnO buffer layer by carbothermal reduction of Ga2O3 powder¡¨, Mater. Lett., vol. 65, pp. 1473-1475, (2011). SCI­pµe½s¸¹:NSC 99-2221-E-006-088-MY2

 

248. H. Y. Lee, H. L. Huang, and C. T. Lee, ¡§Investigation of Single n-ZnO/i-ZnO/p-GaN Heterostructed Nanorod Ultraviolet Photodetectors¡¨, IEEE Photon. Technol. Lett., vol. 23, pp. 706-708, (2011). SCI­pµe½s¸¹:NSC99-2221-E-006-208-MY3

 

249. Y. L. Chiou and C. T. Lee, ¡§Performance Improved Mechanisms of Chlorine-Treated AlGaN/GaN MOS-HEMTs with ZnO Gate Dielectric Layer¡¨, J. Electrochem. Soc., vol. 158, pp. H821-H824 (2011). SCI­pµe½s¸¹:NSC99-2221-E-006-106-MY3

 

250. H. Y. Lee, H. L. Huang, C. T. Lee, ¡§Hydrogen sensing performances of Pt/i-ZnO/GaN metal-insulator-semiconductor diodes¡¨, Sens. Actuators B: Chemical, vol. 157 pp. 460¡V465, (2011). SCI­pµe½s¸¹:NSC99-2221-E-006-106-MY3

 

251. Y. S. Chiu and C. T. Lee, ¡§pH Sensor Investigation of Various-Length Photoelectrochemical Passivated ZnO Nanorod Arrays¡¨, J. Electrochem. Soci., vol. 158, pp. J282-J285 (2011). SCI­pµe½s¸¹:NSC-99-2221-E-006-208-MY3 and NSC-100-3113-E-492-001

 

252. C. H. Shen, J. M. Shieh, J. Y. Huang, H. C. Kuo, C. W. Hsu, B. T. Dai, C. T. Lee, C. L. Pan, and F. L. Yang, ¡§Inductively coupled plasma grown semiconductor films for low cost solar cells with improved light-soaking stability¡¨, Appl. Phys. Lett., vol. 99, 033510 (2011). SCI

 

253. C. T. Lee and H. C. Chen, ¡§Performance improvement mechanisms of organic thin-film transistors using MoOx-doped pentacene as channel layer,¡¨, Org. Electron., vol. 12, pp. 1852-1857 (2011). SCI­pµe½s¸¹:NSC 99-2221-E006-106-MY3

 

254. T. C. Tsai, L. R. Lou, and C. T. Lee, "Charge Storage Characteristics of Silicon Nanoclusters in Silicon Nitride Matrix Grown by Laser Assisted Chemical Vapor Deposition Method", Nanosci. Nanotechnol., vol. 11, pp. 6837-6842 (2011).SCI­pµe½s¸¹:NSC 99-2923-E-006-003-MY3

 

255. Y. L. Chiou and C. T. Lee, "Band Alignment and Performance Improvement Mechanisms of Chlorine-Treated ZnO-Gate AlGaN/GaN Metal¡VOxide¡VSemiconductor High-Electron Mobility Transistors", IEEE Trans. Electron Devices, vol. 58, pp. 3869-3875 (2011). SCI­pµe½s¸¹:NSC-99-2221-E-006-208-MY3, 99-EC-17-A-05-S1-154

 

 

 (B) ·|ij½×¤å Conference Paper

 

01. H.P. Shiao, C.D. Tsai, Y.K. Tu, W. Lin and C.T. Lee, "High Reliability GaAs Metal-Semiconductor-Metal Photodetectors with InGaP Buffer and Capping Layers", The Pacific Rim Conference on Lasers and Electro-Optics(CLEO) p.96 (1995)

 

02. C.D. Tsai, C.T. Lee, J.N. Shen, T.E. Nee, H.P. Shiao, C.Y. Wang and J.I. Chi, "Electron Leakage Improvement of MESFET by Multiquantum Barrier Buffer Layer", National Electron Devices and Materials Symp. Kaoshiung p.256 (1995)

 

03. C.T. Lee and J.H. Yeh, "Long Wavelength Laser Spectra of Nd:AlGaAs Structure Pumped by AlGaAs Laser", National Electronic Devices and Materials Symp. Kaoshiung p.293 (1995)

 

04. M.L. Wu and C.T. Lee, "A Conformal Mapping Method for Quasi-Static Analysis of Electrooptic Devices with Coplanar Microstrip Type Electrode" Proc. of the First Radio Science Symp. Kaoshiung, p.139 (1995)

 

05. C.Y. Wang, Z.M. Chuang, W. Lin, Y.K. Tu and C.T. Lee, "Low Threshold Current Strained-Quantum-Well Complex-Coupled DFB Laser", Proc. of the First Radio Science Symp. Kaoshiung p.311 (1995)

 

06. C.T. Lee and M.L. Wu, "Analysis of Wave Propagation and Optical Characteristics of Electrooptic Modulator by Combination of Finite Difference and Conformal Mapping", Proc. of 1995 International Conference on Radio Science, Beijing, China, p.444 (1995)

 

07. C.T. Lee, H.P. Shiao and C.D. Tsai, "The Design of Small Divergence Beam for InGaAs/InGaP Strained-Quantum-Well Lasers", Proc. of 1995 International Conference on Optoelectronics and Lasers, HangZhou, China, p.34 (1995)

 

08. C.T. Lee, H.H. Lai and H.C. Lee, "Complementary Optical Bistable Switching Using Cross-Circuit Feedback Based on LiNbO3 Crystal", Proc. of 1995 International Conference on Optoelectronics and Lasers, Hangzhou, China, p.177 (1995)

 

09. L.G. Sheu and C.T. Lee, "Stimulated Emission Cross Sections and Fluorescence Branching Ratios of Nd in Ti-Diffused Nd:MgO:LiNbO3 Waveguides", Proc. of 1995 International Conference on Optoelectronics and Lasers, Hangzhou, China, p.97 (1995)

 

10. C.C. Chu, Y.J. Chan, R.H. Yuang, J.I. Chyi and C.T. Lee, "Performance Enhancement Using WSix/ITO Electrodes in InGaAs/InAlAs MSM Photodetectors", 2nd Chinese Optoelectronics Workshop p.95 (1995)

 

11. C.T. Lee, P.L. Fan and J.C. Lee, "A Novel High-Efficiency Power Divider with Arbitrary Power Division on Ti/Mg:LiNbO3 Channel Waveguide", Semiconductor, Fiber and Integrated Optoelectronic Conference, Taipei, FI2-2-1 (1995)

 

12. C.T. Lee, L.G. Sheu and H.C. Lee, "Measurement of Propagation Loss in Ti-Diffused LiNbO3 Waveguide Resonators with Phase Modulator", Semiconductor, Fiber and Integrated Optoelectronic Conference, Taipei, FI2-3-1 (1995)

 

13. Z.M. Chuang, C.Y. Wang, W. Lin, H.H. Liao, J.Y. Su, Y.K. Tu and C.T. Lee,  "New Complex-Coupled 1.55 mm DFB Laser with a Current Blocking Grating", Proc. of Laser and Electro-Optics Quantum Electronics and Laser Science (CLEO/QELS) Anaheim, U.S.A., p.335 (1996)

 

14. C.T. Lee, H.C. Lee and L.G. Sheu, "Improvement of Nonlinear Distortions with Cascaded Mach-Zehnder Modulator", Proc. of XX International Quantum Electronics, Sydney, Australia, p.16/95 (1996)

 

15. J.I. Chyi, T.E. Nee, C.T. Lee, J.L. Shieh and J.W. Pan, "Formation of Self-Aligned InGaAs Quantum Dots on GaAs by Molecular Beam Epitaxy", Ninth International Conference on Molecular Beam Epitaxy, Malibu, California, U.S.A. p.4.25 (1996)

 

16. C.T. Lee, L.G. Sheu and H.C. Lee, "Optical Losses Measurement of Channel Waveguide Devices by Phase Modulator", Proc. Third Chinese Optoelectronics Workshop, Jilin, China, p.174 (1996)

 

17. T.E. Nee, C.T. Lee, J.W. Pan, and J.I. Chyi, "Molecular Beam Epitaxial Growth of Self-Assembled In0.5Ga0.5As Quantum Dots on In0.1Ga0.9As and In0.1Al0.9As", International Electron Devices and Materials Symp. Hsinchu, p.261 (1996)

 

18. C.D. Tsai, H.P. Shiao, C.T. Lee, W. Lin and Y.K. Tu, "A Novel InGaP/GaAs Metal-Semiconductor-Metal Photodetector", International Electron Devices and Materials Symp., Hsinchu, p.251 (1996)

 

19. M.L. Wu, P.L. Fan, L.G. Sheu and C.T. Lee, "Transmission Characteristics of Lossless Bends in Optical Waveguides", Photonics/Taiwan, Hsinchu p.260 (1996)

 

20. W.T. Ni, J.T. Shy and C.T. Lee, "Laser Astrodynamics and Geodesy", Ed. R.T. Jantzen and G.M. Keiser, p.1522, World Scientific Publishing Co. Pte. Ltd. (1996)

 

21. C.Y. Wang, Z.M. Chung, W. Lin, Y.K. Tu and C.T. Lee, "Resistance to External Optical Feedback of Low Chirp Strained-Quantum Well Complex-Coupled DFB Laser", Progress in Electromagnetics Research Symposium (PIERS) Hong Kong, p.711 (1997)

Invited paper

 

22. C.D. Tsai and C.T. Lee, "InGaN/GaN Double-Heterostructure Blue Light-Emitting Diodes", Electronic Devices and Material Symp., Chung-Li, p.155(1997)

 

23. S.M. Liao, C.H. Yang and C.T. Lee, "Effect of Nd Concentration in AlGaAs Layer Grown by Liquid Phase Epitaxy", Electronic Devices and Material Symp. Chung-Li, p.444 (1997)

 

24. K.L. Jaw, C.T. Lee and C.D. Tsai, "Ohmic Performance Study of Ti/Pt/Au on N-type InAs/grated InGaAs Layers", Electronic Devices and Material Symp., Chung-Li, p.448(1997)

 

25. T.E. Nee, N.T. Yeh, J.I. Chyi, and C.T. Lee, "Matrix-Dependent Structural and Photoluminescence Properties of In0.5Ga0.5As Quantum Dots Grown by Molecular Beam Epitaxy", International Workshop on Nano-Physics and Electronics, Tokyo, p.187 (1997)

 

26. H.H. Lu and C.T. Lee, "Directly Modulated Transmission Systems Using Half-Split-Band and Wavelength Division Multiplexing Techniques", Proc. SPIE, Vol.3420, p.162 (1998)

 

27. J.M. Hsu and C.T. Lee, "Transmission Tolerance by Variant-Index in Microprism-Type Bent Waveguides", International Photonics Conference, Taipei (1998)

 

28. C.D. Tsai, C.H. Fu and C.T. Lee, "Performance Study of Indium-Tin-Oxide Transparent Schottky Electrode on GaAs MSM Photodetectors", International Photonics Conference, Taipei (1998)

 

29. M.S. Doong, C.D. Tsai and C.T. Lee, "High Performance Optical Receiver by Integration of InGaP/GaAs MSM Photodetector and GaAs MESFET", International Electronic Devices and Material Symp. Tainan (1998)

 

30. C.T. Lee, "Individual Mode's Bending Loss Measurement for Multimode Channel Waveguides Using Phase Modulator and Prism-Coupler", Proc. SPIE (1998)

 

31. M.S. Doong, C.D. Tsai Y.T. Lyu and C.T. Lee, "High Performance Optical Receiver by Integration of InGaP/GaAs MSM Photodetector and GaAs MESFET", International Electronic Devices and Material Symp. Tainan, p.128 (1998)

 

32. T.E. Nee, N.T. Yeh, J.I. Chyi and C.T. Lee, "Room-Temperature Operation of In0.5Ga0.5As Quantum Dot Lasers Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy", Proc. 2nd International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, Sapporo, Japan p.226 (1998)

 

33. N.T. Yeh, T.E. Nee, P.W. Shiao, M.N. Chang, J.I. Chyi and C.T. Lee, "Photoluminescence Characteristics of Self-Assembled In0.5Ga0.5As Quantum Dot on Vicinal GaAs Substrates",Proc. 2nd International Symposium on Formation , Physics and Device Application of Quantum Dot Structures, Sapporo, Japan p.188 (1998)

 

34.  C.T. Lee, "Process and Characterization of InGaP and Its Applications", International Electronic Devices and Material Symp. Tainan, p.262 (1998) 

     Invited paper

 

35. T.E. Nee,   N.T. Yeh, J.I. Chyi  and   C.T. Lee,  "High Characteristic Temperature-Be-Doped In0.5Ga0.5As Quantum Dot Lasers Grown on GaAs Substrates by Molecular Beam Epitaxy", Proc. 10th International Conference on Molecular Beam Epitaxy, Cannes, France, p.308 (1998)

 

36. C.D. Tsai, Y.J. Lin and C.T. Lee, ¡§The Characterization of Mg Implanted GaN Material¡¨ Progress in Electromagnetics Research Symposium (PIERS), p.529 (1999)

 

37. C.T. Lee and J.M. Hsu, ¡§Tolerance Study in Fabrication of Microprism-Type Symmetric Y-Junction Waveguides¡¨  Progress in Electromagnetics Research Symposium (PIERS), p.889(1999)

Invited paper

 

38. C.T. Lee, C.D. Tsai and H.P. Shiao, "High Performance GaAs Metal-Semiconductor-Metal Photodetectors with Cu/InGaP Schottky Barriers",  The Fifth International Conference on Advanced Materials, IUMRS-ICAM¡¦99, Beijing China, p.505, (1999)

 

39. C.T. Lee, C.D. Tsai and Y.T. Lyu, "Surface Analysis of InGaP Treated with (NH4)2SX",  Symp. On Spectroscopic Techniques and Surface Science XVII, p.41 (1999)

 

40. C.T. Lee and K.C. Shyu, "GaAs Metal-Semiconductor Field Effect Transistor with InGaP/GaAs Multiquantum Barrier Capping and Buffer Layers",  Third International Conference on Low Dimentional Structures and Devices, Antalya, Turkey p.067 (1999)

 

41. H.W. Kao, C.D. Tsai, B.T. Tang and C.T. Lee, ¡§Thermal Stability of Ti/Al/Au Ohimc Contacted N-Type GaN¡¦, Electronic Devices and Material Symp. p.285 (1999)

 

42. C.T. Lee and J.H. Huang, ¡§Nonalloyed GaAs Metal-Semiconductor Field-Effect Transistor¡¨, Electronic Devices and Material Symp. p.391 (1999)

 

43. Y.R. Liu, D.S. Liu and C.T. Lee, ¡§Performance and Mechanism Study of GaN Light Emitting Diodes with Ion-Induced Damages¡¨, Optical and Photonics Taiwan p.35 (1999)

 

44. J.M. Hsu, F.T. Hwang and C.T. Lee, ¡§Dependence of Transmission Efficiency on Fabrication Tolerance in Microprism-Type Symmetric Y-Junction Waveguides¡¨, Optical and Photonics Taiwan p.555 (1999)

 

45. H.H. Lu, C.T. Kuo, N.C. Wang and C.T. Lee, ¡§Directly Modulated 1550nm Am-VSB Optical CATV Long-Distance Transmission System¡¨, Optical and Photonics  Taiwan p.449 (1999)

 

46. H.W. Kao, C.D. Tsai, Y.J. Lin and C.T. Lee, ¡§Diffusion Barrier Pt Functions on Ohmic Thermal Stability of N-Type GaN Materials¡¨, Optical and Photonics Taiwan p.47  (1999)

 

47. C.T. Lee, C.D. Tsai and Y.T. Lyu, ¡§The Characteristics and Thermal Reliability of InGaP Schottky Contact with Copper¡¨, Chinese Institute of Materials Science p.88 (1999)

 

48. C.T. Lee, ¡§Neodymium-Diffused Lithium Niobate Channel Waveguide Laser and Amplifier¡¨, Optical and Photonics Taiwan p.539 (1999)

Invited paper

 

49. C.D. Tsai, and C.T. Lee, ¡§High Performance of GaAs Metal-Semiconductor-Metal Photodetectors with Cu Schottky Electrodes¡¨, SPIE Photonics (2000)

 

50. C.T. Lee, ¡§Systematic Design and Analysis of Microprism-Type Low-Loss and Wide-Angle-Bent Waveguides in Integrated Optics¡¨, International Conference on the Application of Photonics Technology, Quebec, Canada SPIE Vol.4087, p.192 (2000)

Invited paper

 

51. C.T. Lee, ¡§Long Term Thermal Stability of Ohmic Contact on GaN Layers¡¨, The 4th Seminar on Science and Technology, Nitride Semiconductor and Devices, Tokyo, Japan, p.19 (2000)

Invited paper

 

52.  C.T. Lee, B.T. Tong, H.Y. Lee and C.D. Tsai ¡§Ohmic Performance of ZnO and ITO/ZnO Contacted with N-type GaN Layer¡¨, International Conference on Electronic Materials and European Materials Research Society, Strasbourg, France (2000)

 

53.  C.D. Tsai, Y.J. Lin, D.S. Liu and C.T. Lee, ¡§High Performance of GaAs Metal-Semiconductor-Metal Photodetectors with Cu Schottky Electrodes¡¨, SPIE Photonics, Optoelectronic Materials and Devices II, Vol. 4078, p.724 (2000)

 

54.  Y.J. Lin and C.T. Lee, ¡§Ohmic Performance Improvement of n-type GaN by (NH4)2Sx Treatment ¡§, International Electronic Devices and Material Symp. p.300 (2000)

 

55.  H.Y. Lee, I.J. Lin, and C.T. Lee, ¡§Investigation of Double-£_-Doped InAlGaP/GaAs/InGaAs MESFET¡¨ International Electronic Devices and Material Symp. p.141 (2000)

 

56.  D.S. Liu, C.D. Tsai and C.T. Lee, ¡§Thermal Reliability and Degradation Mechanism of Cu Schottky Contact to InGaP¡¨, International Electronic Devices and Material Symp. p.110 (2000)

 

57.  C.T. Lee, ¡§Passive Mechanism Analysis and Ohmic Formation of (NH4)2Sx-treated III-V Nitride Layers¡¨, International Electronic Devices and Material Symp. p.274 (2000)

Invited paper

 

58.   B.T. Tang, C.Y. Lo, Q.X. Yu, and C.T. Lee, ¡§Improved Ohmic Performance for ITO Contact to n-GaN with ITO/ZnO Multilayers¡¨, 2nd International Photonics Conference p.217 (2000)

 

59.  H.H. Lu, C.T. Kuo, N.C. Wang and C.T. Lee, ¡§Long-Distance Transmission of AM-VSB CATV Systems Using Fabry-Perot Laser Diode and Fiber Bragg Grating¡¨, 2nd International Photonics Conference p.373 (2000)

 

60.  C.T. Lee, H.H. Lu and N.C. Wang, ¡§Dispersion Compensation in Externally Modulated Transmission System Using Chirped Fiber Grating¡¨, 2nd International Photonics Conference, p. 392 (2000)

 

61. C.T. Lee, ¡§Ohmic Study of Blue LED by Surface Treatment¡¨, The Fifth Chinese Symposium on Optoelectronics, Xiemen, China. p.52 (2001)

Invited Paper

 

62. C.T. Lee, ¡§Passivation Mechanism and Analysis of Surface-Treated InGaN Layers¡¨, Advanced Compound Semiconductor Materials and Devices, Tokyo Japan, p.19 (2001)

       Invited Paper

     

63. D.S. Liu, C.D. Tsai and C.T. Lee, ¡§Thermal Degradation Mechanism of Cu/Au Contact to

InGaP Photodector¡¨, PIERS 2001, Osaka, Japan p.477 (2001)

 

64. H.Y. Lee, I.J. Lin and C.T. Lee, ¡§Optical Performances of Double-£_-Doped InAlGaP/GaAs/InGaAs MESFET¡¨,PIERS           2001,       Osaka, Japan   p.478       (2001)

 

65.   Q.X. Yu,         B.T. Tang and C.T.  Lee,        ¡§ITO/ZnO/GaN Heterostructure and Contact Performances in Blue         LED¡¨,    PIERS      2001,      Osaka,    Japan      p.480      (2001)

 

66. C.T. Lee     and Y.J.  Lin, ¡§    (NH4)2Sx-treated Ohmic Formation in Blue Light Emitting Diode¡¨, PIERS 2001       , Osaka, Japan p.479 (2001)   

       Invited paper

 

67. C.T. Lee,    H.P. Shiao       and Y.K. Tu     , ¡§  Growth and Performance Study of Aluminum-Free Strained Quantum-Well Pumping Lasers¡¨,      International Laser, Lightwave and Microwave Conference, Shanghai, p.22 (2001)  

 

68. C.S. Lee,    Y.J. Lin and C.T. Lee,     ¡§Oxidation Mechanism for Ohmic Formation in Ni/Au Contacts to P-Type GaN Layers¡¨, Electronics Devices and Materials Symposia, p.171 (2001)

 

69. H.Y. Lee, S.Y. Zeng, H.M. Shieh and C.T. Lee,        ¡§Schottky Diodes of     InAlGaP Schottky Contact with Ti/Pt/Au, Pt/Au and Au Metals¡¨  , Electronics Devices and Materials Symposia, p.184 (2001)       

 

70. T.W   . Huang    and C.T. Lee, ¡§AlGaN/GaN Heterostructure Metal-Semiconductor-Metal Ultraviolet Photodetector   ¡§, Electronics Devices and Materials Symposia, p.835 (2001)      

 

71. B.J. Jiang, S.H. Do and C.T. Lee,      ¡§Investigation of Electrical and Optical Properties of Si-Implantation in P-GaN¡¨   , Proc. Optics and Photonics Taiwan, p.100 (2001)

 

72. H.L. Ma, H.H. Lu, C.S. Lee, C.T. Lee and N.C. Wang,     ¡§Up-Stream noise for the Internet Access for Fiber Optical CATV Systems       ¡§, Proc. Optics and Photonics Taiwan, p.198 (2001)    

 

73. C.L. Hsu    and C.T. Lee   , ¡§The Study of Surface Acoustic Wave Device Fabricated on GaN   Based substrates¡¨, Proc. Optics and Photonics Taiwan, p.359 (2001) 

 

74. C.H. Lin, T.H. Lee,    H.H. Tu, G.H. Sun and C.T. Lee,     ¡§Silicon Oxynitride Waveguide in DWDM Growth by CO2    Laser Assisted Plasma Enhanced Chemical Vapor Deposition¡¨, Proc. Optics and Photonics Taiwan, p.535 (2001)

 

75. H.L. Ma, H.H. Lu, C.S. Lee, C.T. Lee and N.C. Wang, ¡§A DWDM System for 256-QAM Transmission Over 4km Multimode Fiber¡¨, Proc. Optics and Photonics Taiwan, p.605 (2001)

 

76. C.T. Lee and Y.J. Lin, ¡§Surface Treatment and Passivation of III-Nitride LEDS¡¨, Photonics West, San Jose, CA. (2002), SPIE, vol. 4641 (2002)

       Invited paper

 

77. Y.J. Lin, C.S. Lee and C.T. Lee, ¡§Induced variation in barrier height and ohmic formation of oxidized Au/Ni/(NH4)2Sx¡Vtreated p-GaN¡¨, International Topical Meeting on Optics in computing, Taipei, Taiwan, p.99 (2002)

 

78. H.Y. Lee and C.T. Lee, ¡§The Investigation for Various Treatment of InAlGaP Schottky Diodes¡¨, International Conference on Electronic Materials, Xi¡¦an, China (2002).

 

79. C.S. Lee, C.T. Lee, F.T. Hwang and Y.J. Lin, ¡§Activation of Mg in p-type GaN by excimer laser¡¨, Proc. Optics and Photonics, p.159 (2002).

 

80. T.H. Lee, K.H. Tu and C.T. Lee, ¡§ Novel structure for flattened response of arrayed-waveguide grating multiplexer¡¨, Proc. Optics and Photonics, p.105 (2002).

 

81. H.Y. Lee, H.W. Chen and C.T. Lee, ¡§Metal-Oxide-Semiconductor Devices on n-type GaN¡¨, Proc. Optics and Photonics, p.162 (2001).

 

82. D.S. Liu and C.T. Lee, ¡§Thermal degradation mechanism and deep level investigation for Cu/Au contacts to InGaP Schottky diodes¡¨, International Electronic Devices and Material Symp. p.129 (2002).

 

83. C.H. Lin, T.H. Lee, S.C. Lin and C.T. Lee, ¡§Properties of silicon nanostructures deposited by laser assisted plasma enhanced chemical vapor deposition system¡¨, International Electronic Devices and Material Symp. p.337 (2002).

 

84.  H.Y. Lee, W.Y. Lo and C.T. Lee, ¡§Investigation of metal-semiconductor-metal photodetectors with InAlGaP capping and buffer layers¡¨, International Electronic Devices and Material Symp. p.381 (2002).

 85. Y.L. Huang, C.Y. Fang, E.Y. Chang, C.S. Lee and C.T. Lee, ¡§An AlGaN/GaN HEMT with WNx T-gate for High Temperature Application¡¨, Electrochemical Society Proc., Vol. 2002-14, p. 131 Salt City, U.S.A (2002).

 86. C.T. Lee, ¡§Integrated Optical Devices Based on LiNbO3 crystal¡¨, Proc. Optics and Photonics, p. 278 (2002).

 Invited paper

 

87. C.T. Lee and H.W. Chen, ¡§Oxidation Growth for GaN metal-oxide-semiconductor Devices", First Asia-Pacific Workshop on Widegap Semiconductors, Hyogo, Japan, p.75 (2003).

Invited paper

 

88. W.H. Huang and C.T. Lee, ¡§Surface Induced Mechanism for Sulfurated GaN Layers¡¨, First Asia-Pacific Workshop on Widegap Semiconductors, Hyogo, Japan, p.94 (2003).

 

89. H.Y. Lee and C.T. Lee, ¡§Surface Passivation of GaAs MSM-PDs Using the Photoelectronchemical Oxidation Method¡¨, Electronic Devices and Material Symp. p.288 (2003).

 

90. D. S. Liu and C. T. Lee, 2003, Nov. 21-22, ¡§Characteristics of ZnO film prepared by rf sputtering¡¨, Electron Devices and Materials Symposium Keelung, Taiwan, p. 449 (2003).

 

91. Z. D. Li, Y. J. Lin and C. T. Lee, ¡§The dependendence of p-type GaN ohmic contact performances on the thermal treatment time¡¨, Optics and Photonics Taiwan, Proc. I, p. 8 (2003).

 

92. S. H. Chang, H. Y. Lee, W. Y. Lo and C. T. Lee, ¡§Surface passivation of N-type GaAs MESFETs using the photoelectrochemical oxidation method¡¨, Optics and Photonics Taiwan, Proc. I, p. 35 (2003).

 

93. ³¯«T¦N, ³¯«Â§» and C. T. Lee, ¡§The fabrication and performance of n-type GaN MOSFETs¡¨, Optics and Photonics Taiwan, Proc. I, p. 84 (2003).

 

94. §õ©v«H, ÃQ§Ó¦w and C. T. Lee, ¡§Acoustooptical tunable filter wavelength converter¡¨, Optics and Photonics Taiwan, Proc. I, p. 124 (2003).

 95. C. T. Lee, ¡§Tunable emission wavelength of Si nanostructure in Si oxide matrix¡¨, International Electronic Devices and Material Symp., Hsinchu , Taiwan , p.75 (2004). Invited paper

 96. C. T. Lee, K. R. Chang, L. Z. Yu, T. H. Lee, C. C. Chuo, C. E. Tsai, T. C. Wang, J. T. Hsu, and T. H. Chen, ¡§Investigation of electrical and optical properties of Al doped ZnO films for UV transparent electrode¡¨, International Electronic Devices and Material Symp., Hsinchu, Taiwan, p. 87 (2004).

 

97. C. H. Lin, T. C. Tsai, C. T. Lee, and H. Y. Lee, ¡§Photoluminescence degradation mechanism of Si nanoclusters by long-term He-Cd laser irradiation¡¨, International Electronic Devices and Material Symp., Hsinchu, Taiwan, p. 237 (2004).

 

98. C. T. Lee, U. Z. Yang, H. Y. Lee, and P. S. Chen, ¡§Photoluminescence studies of Carbon implanted GaN:Mg¡¨, International Electronic Devices and Material Symp., Hsinchu, Taiwan, p. 331 (2004).

 

99. T. H. Lee, F. C. Pai1, W. T. Shay, and C. T. Lee, ¡§Novel structure of electromagnetic field sensor with LiNbO3 optical modulator and antennas¡¨, Optics and Photonics Taiwan, Chung-Li, Taiwan, B-SA VII 2-6 (2004).

 

100.§õ®æÞ³¡B§õªY¿¢¡B§õ²M®x, ¡§´á¤Æ¾TñS/´á¤ÆñS²§½è±µ­±ª÷ÄÝ-¥b¾ÉÅé-ª÷Äݵµ¥~¥úÀË´ú¾¹¡¨, Optics and Photonics Taiwan, Chung-Li, Taiwan, A-SU-I 9-1 (2004).

 

101. D. S. Liu, and C. T. Lee, ¡§X-ray Photoelectron Spectroscopy Study for Cu/Au Schottky Contact on InGaP Layer¡¨, Optics and Photonics Taiwan, Chung-Li, Taiwan, A-SU-III 14-9 (2004).

 

102. ©P°êÀs¡B¤ý°iááB§õ²M®x, ¡§½è¤l¥æ´«Ánªiªi¾É¤§Án¥ú¥i½ÕªiªøÂà´«¾¹¡¨, Optics and Photonics Taiwan, Chung-Li, Taiwan, PB-SU1-75 (2004).

 

103. C. T. Lee and C. H. Lin, ¡§Investigated the performance of Si nanostructure in Si oxide matrix¡¨,  ²Ä¤C©¡¨â©¤¤T¦a¤¤µØ¥ú¹q¤l¬ã°Q·|, ¥x¤¤ (2005).

Invited paper

 

104. C. T. Lee, ¡§GaN Metal-Oxide Semiconductor Field-Effect Transistor Devices¡¨, Asia-Pacific Workshop on Widegap Semiconductors, Hsinchu, Taiwan (2005).

Invited paper

 

105. C. T. Lee, ¡§III-V nitride base MOS devices¡¨, The 9th National MOCVD Academic Conference of China, Anhui Province, China (2005).

Invited paper

 

106. C. T. Lee, T. H. Lee, F. C. Pai and W. T. Shay, ¡§Optical Waveguide Electromagnetic Signal Sensors¡¨, The 10th Optoelectronics and Communications Conference, Seoul, Korea, p. 852 (2005).

107. J. C. Wang, I Y. Fu, and C. T. Lee, ¡§2.4GHz Microstrip Bandpass Filter on Al2O3 Substrate by Thin-Film Technology¡¨  CECA 2005 Conference on electronic communication and applications, Taiwan, p. RFC1-02, 2005.

 

108. D. S. Liu, C. C. Wu, and C. T. Lee, ¡§A transparent electrode prepared by co-sputtered indium tin oxide and zinc oxide targets¡¨, Second Asia-Pacific Workshop on Widegap Semiconductors, Proc. p. 152, Hsinchu, Taiwan, March 7-9 (2005).

 

109. D. S. Liu, C. C. Wu, and C. T. Lee, ¡§A transparent electrode prepared by co-sputtering system¡¨, 10th International Symposium on Microwave and Optical Technology (ISMOT), Proc. p.523, Fukuoka, Japan, August 22-25 (2005).

 

110. D. S. Liu, C. C. Wu, and C. T. Lee, ¡§Microstructure investigations for ITO co-sputtered with ZnO¡¨, Twelfth Canadian Semiconductor Technology Conference (CSTC), Proc. p.221, Ottawa, Canada, August 16-19 (2005).

 

111. D. S. Liu, C. C. Wu, C. H. Lin and C. T. Lee, ¡§Electrical, Optical and Structure Properties of ITO Films Cosputtered with ZnO¡¨, International Conference on Solid State Devices and Materials, Proc. p. 124, Kobe, Japan, Sep. 12-15 (2005).

 

112. D. S. Liu, C. H. Lin, C. C. Wu and C. T. Lee, ¡§A Piezoelectric ZnO Film Prepared by RF Magnetron Sputtering¡¨, International Conference on Solid State Devices and Materials, Proc. p.126, Kobe, Japan, Sep. 12-15 (2005).

 

113. D. S. Liu, C. H. Lin, C. C. Wu and C. T. Lee, ¡§The Preparation of Single-Crystal ZnO Film and Its Application on Layered SAW Device¡¨, 2nd International Symposium on Point Defect and Nonstoichiometry, Kaohsiung, Taiwan, Oct. 4-6, (P2-11) (2005).

 

114. D. S. Liu, Y. K. Liao, C. Y. Wu, F. S. Juang and C. T. Lee, ¡§A Silicon Oxide Hard Coating Deposited on Flexible Substrate by TMS - PECVD System¡¨, International Conference on Advanced Manufacture, Proc. p.562, Taipei, Taiwan, Nov. 28 ¡V Dec. 02 (2005).

 

115. K. W. Lee, H. Y. Lee, L. H. Huang, Q. X. Yu and C. T. Lee, ¡§ Investigation of AlGaN/GaN heterojunction Metal-Semiconductor-Metal photodetectors¡¨ Electronic Devices and Material Symp. p.62 (2005).

 

116. L. Z. Yu, D. S. Liu and C. T. Lee, ¡¨Investigation of electrical and optical properties of antimony doped ZnO films for UV transparent electrode¡¨ Electronic Devices and Material Symp. p.87 (2005).

 

117. T. C. Tsai, L. W. Lai, J. H. Cheng, L. R. Lou and C. T. Lee, ¡¨Investigation of silicon nanostructure embedded in silicon nitride grown by laser assistance¡¨ Electronic Devices and Material Symp. p.100 (2005).

 

118. ¶À¥ß½å¡BÃÓ°¶¤å¡B§õªY¿¢¡B§õ²M®x,¡¨¥ú¹q¤Æ¾Ç®ñ¤Æªk»s§@´á¤ÆñSª÷®ñ¥b³õ®Ä¹q´¹Å餧¬ã¨s¡¨ Optics and Photonics Taiwan, Tainan, Taiwan, A-FR-I 3-3 (2005).

 

119.  P. S. Chen, H. Y. Lee, Q. X. Yu, L. R. Lou and C. T. Lee, ¡¨Investigation and analysis of  Chlorine-Treated  p-type GaN surface using X-ray  photoelectron spectroscopy¡¨ Optics and Photonics Taiwan, Tainan, Taiwan, A-SA-I 5-4 (2005).

120. §õ©v«H¡B½²§»ªN¡B§d¬f¼Ý¡B§õ²M®x, ¡§¥H෻ľY´¹Åé¬ã»s¿nÅ餯¤§¥ú¹q½Õ¨î«¬¹qºÏ³õ·P´ú¾¹¡¨ Optics and Photonics Taiwan, Tainan, Taiwan, B-FR-IV 2-1 (2005).

 

121. ªL¤å²»¡BªL¯§¥ò¡B§õ²M®x, ¡§¸g²¸¤Æ»Ï³B²z¤§n «¬´á¤ÆñS§ïÅÜªí­±´_¦X³t²v»P¨ä¥ú¹q¯S©Ê¤§¬ã¨s¡¨ Optics and Photonics Taiwan, Tainan, Taiwan, PA-FR1 031 (2005).

 

122. ³\¥[ª@¡B§õ¬F¾Ë¡B¼B¥N¤s¡B§õ²M®x, ¡§¥H®gÀWºÏ±±ÂqÁá¨t²Î¤Î¼ö°h¤õ³B²z»s§@°ª«~½è®ñ¤Æ¾NÀ£¹qÁ¡½¤¡¨, Optics and Photonics Taiwan, Tainan, Taiwan, PA-FR1 062 (2005).

 

123. Q. X. Yu and C. T. Lee, ¡§Red luminescence in Sol-Gel prepared ZnO films¡¨, Optics and Photonics Taiwan, Tainan, Taiwan, PA-FR1 211 (2005).

 

124. ¸â¾±¬F¡B§õªY¿¢¡B§õ²M®x, ¡§ºÒÂ÷¤l§G´Ó´á¤Æ¾TñS/´á¤ÆñS²§½è±µ­±ª÷ÄÝ-¥b¾ÉÅé-ª÷ÄÝ¥ú°»´ú¾¹¤§»s§@»P¯S©Ê¤ÀªR¡¨, Optics and Photonics Taiwan, Tainan, Taiwan, PA-FR1 216 (2005).

 

125. §d¬F¬v¡B³¯¨Ì©ý¡B¼B¥N¤s¡B§õ²M®x, ¡§¥H¹q¼ß¼W±j¤Æ¾Ç®ð¬Û¨I¿n¨t²Î¦b¶ì½¦°òªO¤W»s³Æ¨¾¤ô½¤¤§¬ã¨s¡¨ Optics and Photonics Taiwan, Tainan, Taiwan, PA-SA1 008 (2005).

 

126. T. C. Tsai, J. H. Cheng, L.W. Lai, Q. X. Yu, C. F. Chen, and C. T. Lee, ¡§The blueshift of photoluminescence from silicon nanoparticles embedded in silicon nitride¡¨, Asia-Pacific International Symposium on the Basics and Applications of Plasma Science and Technology, Yunlin, Taiwan (2005)

 

127. C. T. Lee, T. H. Lee, F. C. Pai, and W. T. Shay, ¡§Electromagnetic Field Electrooptical Sensor Using LiNbO3 Mach-Zehnder and Antenna¡¨, Symp. on Optical Communication Technologies, p. 20, Kaohsiung, Taiwan, Feb. 23¡V24 (2006).

Invited paper

 

128. K. H. Pan, P. S. Chen, H. Y. Lee, and C. T. Lee, ¡§Current spreading of GaN light-emitting diodes using plasma treatment¡¨, The 11th Optoelectronics and Communications Conference, Kaohsiung, Taiwan, 4E2-4 (2006).

 

129. R. X. Wu, Y. M. Chen and C. T. Lee, ¡§ Investigation of optical properties of ZnO nanorods grown at low temperature¡¨,  The 11th Optoelectronics and Communications Conference, Kaohsiung, Taiwan, 5C4-1 (2006).

 

130. D. S. Liu, C. H. Lin, F. C. Tsai, C. S. Sheu, and C. T. Lee, ¡§Thermal Degradation Investigations for Indium Zinc Oxide Films Prepared by Radio Frequency Magnetron Cosputtering¡¨, The 11th Optoelectronics and Communications Conference, Kaohsiung, Taiwan, 5C4-3 (2006).

 

131. T. C. Tsai, and C. T. Lee, ¡§Investigation of Structure and Performances of Silicon Nanoclusters Embedded in Silicon Nitride Grown by Laser Assistance¡¨, 4th International Conference on Quantum Engineering Science, Tainan, Taiwan, p. 49 (2006).

 

132. T. C. Tsai, and C. T. Lee, ¡§Investigation of Structure and Performances of Silicon Nanoclusters¡¨, The 4th Regional Inter-University Postgraduate Electrical and Electronics Engineering Conference, Macao, China, p. 16 (2006).

Invited paper

 

133. Y. L. Song, N. Wang, G. Qiu, C. S. Tsai, C. T. Lee and C. S. Tsai, ¡§MEMS-based MHz ultrasonic nozzles and application¡¨, 5th Annual Industry Research Symposium Engineering in Medicine & Life Chips Technologies, UC Irvine, Irvine, California, May 15-17 (2006).

 

134. C. T. Lee, and T. C. Tsai, ¡§Silicon nanoclusters embedded in silicon nitride matrix¡¨, The 6th Emerging Information Technology Conference, Dallas, U. S. A (2006)

Invited paper

 

135. H. Y. Lee, Y. F. Lin, M. Y. Wang and C. T. Lee, ¡§Investigation of GaAs MOSFETs with Gate Oxide Grown Using Photoelectrochemical Oxidation Method¡¨, International Conference on Solid State Devices and Materials, Proc. p. 948, Yokohama, Japan, Sep. 12-15 (2006).

 

136. P. S. Chen and C. T. Lee, ¡§Mechanism investigation of chlorine-treated InGaN/GaN light-emitting diodes¡¨, International Conference on Solid State Devices and Materials, Proc. p. 672, Yokohama, Japan, Sep. 12-15 (2006).

 

137. D. S. Liu, C. H. Lin, C. S. Sheu and C. T. Lee, ¡§Study of the Improved conductivity of Indium-tin Oxide Films Cosputtered with Zinc Oxide at Room Temperature from Thermal Degradations¡¨, International Conference on Solid State Devices and Materials, Proc. p. 714, Yokohama, Japan, Sep. 12-15 (2006).

 

138. D. S. Liu, C. Y. Wu, B. W. Huang and C. T. Lee, ¡§Effect of Oxygen Contents on the Property of Hydrophobic Thin Films Deposited on Flexible Substrates Using Plasma-enhanced CVD¡¨, International Conference on Solid State Devices and Materials, Proc. p. 758, Yokohama, Japan, Sep. 12-15 (2006).

 

139. C. T. Lee, ¡§Optoelectronic nanostructure of thin film¡¨, International Workshop on Photonics and Display Technologies (IWPD2006), p.28, Taipei, Taiwan.

Invited paper

 

140. C. S. Sheu, D. S. Liu, F. C. Tsai, and C. T. Lee, ¡§P-type Zinc Oxide Films Prepared Using Radio Frequency Magnetron Cosputtering System¡¨, 2006 International Electron Devices and Materials Symposium, Proc (A,D). p. 82, Tainan, Taiwan, Dec. 7-8 (2006).

 

141. ³\¥[ª@¡B§d¬F¬v¡B§õ²M®x¡B¼B¥N¤s¡A¡§¥H®gÀWºÏ±±¦@ÂqÁá¨t²Î¨I¿n®ñ¤Æ¾N-´á¤Æ¾TÁ¡½¤¤§¬ã¨s¡¨¡AOptical and Photonics Taiwan 2006 (AP-095).

 

142. H. Y. Lee, Y. F. Lin, M. Y. Wang, and C. T. Lee, ¡§The performance of the GaAs oxide was grown by using photoelectrochemical oxidation method in GaAs MOS devices¡§, International Electronic Devices and Material Symp., PA048 ,Tainan, Taiwan, 2006.

 

143. ªL¤¸´I¡B§õªY¿¢¡B§õ²M®x, ¡§¥H·s¦¡¥ú¹q¤Æ¾Ç®ñ¤Æªk¦¨ªø¯~¤ÆñS®ñ¤Æ¼h¤§¯S©Ê¬ã¨s¡¨, Optics and Photonics Taiwan, AP001, Hsinchu, Taiwan, 2006.

 

144. ³¯¹©³ó¡B³¯±ê¨|¡B¤ý»Ê¼Ý¡B§õªY¿¢¡B§õ²M®x, ¡§³z©ú¹q·¥¤§³·±Y«¬·P¥ú¤G·¥Åé»s§@¤Î¯S©Ê¬ã¨s¡¨, Optics and Photonics Taiwan, AP006, Hsinchu, Taiwan, 2006.

 

145. P. S. Chen, Y. H. Zhou, Y. T. Lee, and C. T. Lee ¡§Mechanism Investigation of Chlorine-treated GaN-based Ultraviolet Photodetectors¡¨ Optics and Photonics Taiwan, AO-03, Hsinchu, Taiwan, (2006).

 

146. T. C. Tsai and C. T. Lee, ¡§Electroluminescence emission of light-emitting devices using crystalline nanoclusters embedded in silicon nitride matrices¡¨ Optics and Photonics Taiwan, AP006, Hsinchu, Taiwan, 2006.

 

147. L. H. Huang, X. Y. Huang, and C. T. Lee, ¡§Annealing effects of oxide layers directly grown by photoelectrochemical oxidizing Al0.1Ga0.9N films,¡§ International Electron Devices and Materials Symposium(IEDMS), Tainan, PA044,2006

 

148. L. H. Huang, H. Y. Lee, X. Y. Huang and C. T. Lee,¡§Investigation of AlGaN MOS devices with oxidized layer grown using Photoelectrochemistry Oxidation Method,¡§, Optics and Photonics Taiwan, AO-04, Hsinchu, Taiwan 2006.

 

149. ¿ààT¤å¡B§õ²M®x, ¡§ÂqÁá°ª«~½è®ñ¤Æ¾NÁ¡½¤¯S©Ê¤§¬ã¨s¡¨, 2006¯à·½»P¥ú¹qÁ¡½¤¬ì§Þ¬ã°Q·|º[°ê¬ì·|±MÃD­pµe¬ã¨s¦¨ªGµoªí·|, pp. 22-24 (2006)

 

150. L. W. Lai and C. T. Lee, ¡§Influence of atmosphere and substrate temperature on optical and electrical properties of ZnO thin film by magnetron sputtering¡¨, The International Conference on Technological  Advances of Thin Films & Surface Coatings, , Singapore, p. 251 (2006)

 

151. L. Z. Yu, and C. T. Lee, ¡§Investigation of electrical and optical properties of antimony doped ZnO films for UV transparent electrode¡¨, The International Conference on Technological  Advances of Thin Films & Surface Coatings, Singapore, p. 270 (2006)

 

152. D. S. Liu, C. Y. Wu, B. W. Huang, C. T. Lee, and F. S. Juang, ¡§A novel buffer layer to improve the hard coating adhesion contacts on flexible substrates¡¨, ¡§Thin Films 2006¡¨, Proc. p. 199, Singapore, Dec. 11- 15 (2006).

 

153. C. S. Lee, K. H. Pan, Y. T. Lee, Y. H. Zhou, P. S. Chen and C. T. Lee, ¡§Current spreading of GaN light-emitting diodes using plasma treatment¡¨, International Electron Devices and Materials Symposia, p.19 (2006).

 

154. R. X. Wu, M. K. Wang and C. T. Lee, ¡§Ultraviolet light-emitting devices of ZnO/GaN p-n and p-i-n heterojunctions¡¦, International Electron Devices and Materials Symposia, p. 144 (2006)

 

155. C. T. Lee and L. H. Huang, ¡§Investigation of MOS diodes with AlGaN oxide film grown byphotoelectrochemiatry oxidation method¡¨, The 211th Meeting of The Electrochemical Society, Chicago, U.S.A, 785 (2007).

Invited paper

 

156. C. T. Lee, T. H. Lee and P. I Wu, ¡§Integrated LiNbO3 Mach-Zehnder type electrooptical electromagnetic sensor¡¨,  The 7th Pacific Rim Conference on Lasers and Electro-Optics, Seoul, Korea, TuD3-3 (2007)

 

157. L. H. Huang, S. H. Yeh, C. T. Lee ,H. P. Tang, J. Bardwell and J. B. Webb, ¡§Investigation of AlGaN/GaN metal-oxide semiconductor high electron mobility transistors using photoelectrochemical oxidation method¡¨, The 7th Pacific Rim Conference on Lasers and Electro-Optics, Seoul, Korea, WA1-6 (2007)

 

158. H. Y. Lee, M. Y. Wang and C. T. Lee, ¡§Ultraviolet photocodetector based on MgxZn1-xO(0£x0.36) thin films deposited by RF magnetron sputtering¡¨, The 7th Pacific Rim Conference on Lasers and Electro-Optics, Seoul, Korea, WP_042 (2007)

 

159. L. W. Lai, J. T. Chen and C. T. Lee, ¡§Mechanism investigation of (NH4)2Sx-treated III-V compounds multi-junction solar cell¡¨, International Conference on Solid State Devices and Materials, Proc., Tsukuba, Japan, p. 554, Sep. 19-21 (2007).

 

160. D. S. Liu, C. W. Cheu, F. C. Tsai, and C. T. Lee, ¡§Properties of zinc oxide films cosputtered with various aluminum contents at room temperature¡¨, International Conference on Solid State Devices and Materials, Proc., Tsukuba, Japan, p. 590, Sep. 19-21 (2007).

 

161. D. S. Liu, C. Y. Wu, C. S. Shei, and C. T. Lee, ¡§Activation of nitrogen-acceptors in Al-N codoped zinc oxide films prepared by radio frequency magnetron cosputtering technology¡¨, International Conference on Solid State Devices and Materials, Proc., Tsukuba, Japan, p.592, Sep. 19-21 (2007).

 

162. Y. Zhang, D. J. Chen, and C. T. Lee, ¡§Room temperature negative differential resistance in Au/single ZnO wire/Au junction structure¡¨, 212th Electrochemical Society Meeting, Washington, DC. U.S.A, ECS transactions, vol. 11, p. 7 (2007).

 

163. H. Y. Lee, P. S. Chen, and C. T. Lee, ¡§High performance of GaN metal-semiconductor-metal photodetectors with chlorine surface treatment¡¨, The 34th International Symposium on Compound Semiconductors (ISCS 2007), Kyoto, Japan, p. 38 (2007).

 

164. L. H. Huang, S. H. Yeh, and C. T. Lee, ¡§Investigation of AlGaN/GaN MOS-HEMTs with gate insulator grown by photoelectrochemical oxidation method¡¨ The 34th International Symposium on Compound Semiconductors (ISCS 2007), Kyoto, Japan, p. 39 (2007).

 

165. C. T. Lee and R. X. Wu, ¡§Ultraviolet light-emitting devices of ZnO/GaN p-n and p-i-n heterojunctions¡¨, The 3th National ZnO Academic Conference of China, Hang zhou, China (2007).

Invited paper

 

166. M. K. Wang, W. H. Huang, H. Y. Lee, C. T. Lee, ¡§Investigation of ZnO:In nanorods deposited by vapor cooling condensation method¡¨, IEEE Region 10 Conference (TENCON), Taipei, p. 12 (2007).

 

167. L. H. Huang, C. L Lu, C. T. Lee, ¡§Investigation of AlGaN/GaN/AlGaN metal-oxide-semiconductor high electron mobility transistors¡¨, IEEE Region 10 Conference (TENCON), Taipei, p. 12 (2007).

 

168. C. T. Lee, H. Y. Lee, C. C. Lin, P. S. Chen, ¡§Mechanisms and high performances of chlorine-treated GaN ultraviolet photodetectors¡¨, SPIE Photonic Asia, Beijing, China, 6838-122 (2007).

Invited paper

 

169. L. W. Lai, C. H. Liu, C. T. Lee, ¡§Investigation of silicon nanoclusters embedded in ZnO Films grown by Co-sputter System at Low Temperature¡¨, International Electron Devices and Materials Symposium, Hsinchu, PC-3 (2007).

 

170.  C. T. Lee, K. C. Gan, X. Y. Huang, ¡§ Light output enhancement of light emitting diodes by photoelectrochemical etching method¡¨, International Electron Devices and Materials Symposium, Hsinchu, PD-25 (2007).

 

171. K. C. Gan, Y. T. Lee, C. T. Lee, ¡§Current Spreading on High-Power GaN-based LEDs using a Current Blocking Layer Structure¡¨ , Optics and Photonics Taiwan, Taichung, p. 49 (2007)

 

172. J. T. Yan, Y. H. Chou, C. T. Lee, ¡§Light extraction efficiency improvement of GaN-based light-emitting diodes¡¨, Optics and Photonics Taiwan , Taichung, p. 21 (2007)

 

173. L. Z. Yu, H. W. Ho, S. Y. Liou, H. Y. Lee and C. T. Lee, "Investigation of efficiency and color purity of OLED utilizing co-host emitter", Optics and Photonics Taiwan, Taichung, p. 83 (2007).

 

174. C. M. Lin, C. L. Lu, L. H. Huang and C. T. Lee, ¡¥Investigation of AlGaN/GaN/AlGaN metal -oxide-semiconductor high electron mobility transistors using insulator layer directly grown by photoelectrochemical oxidation method¡¨, Optics and Photonics Taiwan, Taichung, p. 66 (2007).

 

175. ½²´I¶v, ¦ó©¾¿Î, 李²M®x, 劉¥N¤s, ¡§¦b«Ç·ÅÀô¹Ò¤U¥H不¦P»sµ{¤è¦¡¨I¿n¾TºUÂø®ñ¤Æ¾N³z©ú¾É¹qÁ¡½¤¯S©Ê¤§¬ã¨s¡¨, Optics and Photonics Taiwan, Taichung, p. 70 (2007).

 

176. C. T. Lee, ¡§Silicon nanostructure light-emitting Devices¡¨, Optics and Photonics Taiwan, Taichung, Nov.30-Dec. 1 (2007).

Invited paper

 

177. Y. H. Chou, J. T. Yan, H. Y. Lee, C. T. Lee, ¡§AZO films with Al nano-particles to improve the light extraction efficiency of GaN based light-emitting diodes¡¨, SPIE Photonics West Conference, California, USA,  6894-47 (2008)

 

178. C. T. Lee, ¡§Progress in photovoltaics¡¨, The 8th Emerging information and Technology Conference, Tainan, Taiwan, p. 27, Nov. 20-21 (2008)

Invited paper

 

179. C. T. Lee, J. G. Lin, and H. Y. Lee, "Investigation of silicon-germanium metal-oxide-semiconductor field-effect transistors grown by laser-assisted plasma-enhanced chemical vapor deposition", 5th International Conference on Group IV Photonics, Sorrento, Italy, p. 161, Sep. 17-19 (2008).

 

180. C. C. Lin, H. Y. Lee, and C. T. Lee, ¡§Light output enhancement of GaN-based light-emitting diodes with oblique indium-tin oxide¡¨, International Conference on Solid State Devices and Materials, Proc., Tsukuba, Japan, p. 522, Sep. 23-26 (2008).

 

181.J. T. Yan, L. R. Lou and C. T. Lee, "ZnO-nanorods-on-GaN heterojunction light-emitting diode grown by vapor cooling condensation method", International Conference on Solid State Devices and Materials, Proc., Tsukuba, Japan, p. 546, Sep. 23-26 (2008).

 

182. C. T. Lee and L. H. Huang, ¡§Investigation and fabrication of AlGaN/GaN MOS-HEMTs with gate insulators grown by photoelectrochemical oxidation method¡¨, Pacific Rim Meeting (PRiME) 2008,  Honolulu, HI, USA,  p. 100, Oct. 12-17 (2008).

Invited paper

 

183. L. H. Huang, N. T. Shiau, and C. T. Lee, "P-GaN metal-oxide-semiconductor diodes with gate insulator grown using bias-assisted photoelectrochemical oxidation method" IEEE Nanotechnology Materials and Devices Conference (NMDC 2008), Kyoto, Japan, p.237 (2008).

 

184. C. T. Lee, W. M. Shien, H. Y. Lee, and C. H. Chou, ¡§ZnO:Al Based Transparent Thin Film Transistors¡¨, IEEE LEOS Annual Meeting Conference Proceeding, CA, USA, MG3, p. 65, 9-13 Nov (2008)

 

185. Y. F. Chen, J. F. Jian, L. R. Lou, and C. T. Lee, ¡§Indium Function of In-doped ZnO nanorods grown by catalyst-free chemical vapor deposition,¡¨ International Electron Devices and Materials Symposium, Hsinchu, p. 36 (2008)

 

186. L. Z. Yu, H. W. Ho and C. T. Lee, ¡§RGB tricolor with improved luminance efficiency produced by white organic light-emitting diodes with microcavity structure¡¨, International Conference on Optics and Photonics Taiwan, Taipei, p. 142 (2008)

 

187. J. T. Yan, K. C. Kan, and C. T. Lee, ¡§Improve the extraction efficiency of the AlGaInP-based LEDs by roughing the window layer¡¨, International Conference on Optics and Photonics Taiwan, Taipei, p. 142 (2008)

 

188. Y. L. Chiou, N. T. Shiau, C. M. Lin, and C. T. Lee, ¡§Gate-recessed AlGaN/GaN MOS-HFETs Fabricated by using photoelectrochemical method,¡¨ Optics and Photonics Taiwan, Taipei, p. 64, (2008).

 

189. H. Y. Lee, T. Y. Chen, and C. T. Lee, ¡§Investigated the Performances of MgxZn1-xO:Al Thin Films Contact with GaN and Al0.2Ga0.8N by Using RF Magnetron Co-sputtering System¡§, International Conference on Optics and Photonics Taiwan, Taipei, p. 76 (2008)

 

190. J. T. Yan, C. Y. Tseng, C. H. Chen, and C. T. Lee, ¡§Improved hydrogen detection sensitivity of a Pt/Ga2O3/GaN diode¡¨, The SPIE Photonics West "Gallium Nitride Materials and Devices IV" Conference in San Jose, United States, p. 7216-38, Jan. (2009).

 

191.Y. H. Lin, H. Y. Lee, and C. T. Lee, ¡§ZnO-based Transparent Thin-film Transistors with ZnO Buffer Layer¡¨ Asia-Pacific Workshop on Widegap Semiconductors, Zhang Jia Jie, Hunan, China, p. 568, (2009).

 

192. C. H. Chen, B. J. Li, L. R. Lou, and C. T. Lee, ¡§Ultraviolet Photodetectors of P-GaN/i-ZnO/n-ZnO:Al Using Vapor Cooling Condensation Technique¡¨ Asia-Pacific Workshop on Widegap Semiconductors, Zhang Jia Jie, Hunan, China, p. 580, (2009).

 

193. C. T. Lee, T. S. Lin, J. T. Yan, and H. Y. Lee,¡¨N-ZnO nanorod/i-ZnO nanorod/p-GaN heterostructured light-emitting diodes¡¨ Asia-Pacific Workshop on Widegap Semiconductors, Zhang Jia Jie, Hunan, China, p. 207, (2009).

194. D. E. Lu, Y. L. Chiou, H. Y. Lee, and C. T. Lee, ¡¨Low frequency noise of chlorine-treated GaN/AlGaN MSM-photodetectors¡¨ Proc. 215th The Electrochemical Society Meeting, San Francisco, California, USA, p. 43, (2009).

 

195. L. H. Huang, N. T. Shiau, L. R. Lou, and C. T. Lee,¡¨ Improvement of low frequency noise of p-type GaN by surface chlorination treatment¡¨, Proc. 215th The Electrochemical Society Meeting, San Francisco, California, USA, p. 66, (2009).

 

196. Y. L. Chiou, L. H. Huang, L. R. Lou, and C. T. Lee,¡¨ Electrical performance of gate-recessed AlGaN/GaN MOS-HEMTs fabricated using photoelectrochemical method¡¨ Proc. 215th The Electrochemical Society Meeting, San Francisco, California, USA, p. 66, (2009).

 

197. C. T. Lee, ¡§Surface plasma enhanced photoemission from crystalline silicon quantum dots embedded in silicon nitride matrix¡¨, Proc. 10th Anniversary of France-Taiwan Scientific Prize, Taipei, Taiwan, p.144, (2009).

Invited paper

 

198. J. T. Yan, T. H. Lee and C. T. Lee, ¡§Investigation of Pt/Ga2O3/GaN hydrogen sensor diodes¡¨, Proc. 216th The Electrochemical Society Meeting, Vienna, Austria, p. 3120, (2009).

 

199. S. Dalui, C. C. Lin, H. Y. Lee, and C. T. Lee, ¡§Enhanced vertical emission from GaN based light emitting diode with ZnO nanorod arrays produced by hydrothermal method¡¨, Proc. 216th The Electrochemical Society Meeting, Vienna, Austria, p. 2332, (2009).

 

200. S. L. Yeh, L. Z. Yu, L. R. Lou and C. T. Lee, ¡§Performance improvement of organic thin-film transistor using LiF buffer layer in metalorganic interface¡¨, Proc. 216th The Electrochemical Society Meeting, Vienna, Austria, p. 2249, (2009).

 

201. C. C. Lin, H. Y. Lee, and C. T. Lee, ¡§GaN-based resonant cavity light emitting diodes using dielectric distributed Bragg reflect