Professor Name

	Yeong-Her Wang Distinguished Professor
	Position
	Distinguished Professor
	Telephone number
	+886-6-275-7575 ext. 62352
	FAX
	+886-6-2080598
	E-mail
	YHW@eembox.ncku.edu.tw
	Lab
	Advanced Materials and Devices Lab (92B35,EE Department Building,#1,Da-Tsuen Rd.,Tainan,Taiwan)
Courses
2009 Fall None
Educations
Ph.D., National Cheng kung University, R. O. C. (1985) M.S., National Cheng kung University, R. O. C. (1980) B.S., National Cheng Kung University, R. O. C. (1978)
Experiences
Alumni Association Center Director(2005-) Director, Electrical Laboratories(1999-2003) Chairman (1996-1999) Associate Director (1993-1996) Professor of Electrical Engineering (1992-) Post Member Technical Staff, AT&T Bell Labs.,Murrary Hill,U.S.A. (1989-1991) Associate Professor (1985-1992) Lectuer (1982-1985)
Specialities
Semiconductor Devices and Physics Compound Semiconductor Engineering MMIC Design & Fabrication Optoectronic Devices and Physics
Honors
"Outstanding Engineering Professor Award", The Chinese Institute of Engineers,2006 "The technology cathedra of Kuo-Ting Li" : Gold medal, National Cheng Kung University , 2005 "Outstanding Electrical Engineering Professor Award", The Chinese Institute of Electrical Engineering, 2004 "Outstanding Research Award,National Science Council" , R.O.C ,2004 Board of IOP (Institute of Physics ) Publishing for Scientific Semiconductor Technology 2002,2000,1998, International Electron Devices and Materials Symposia (IEDMS), Committee，chair Award of Excellent Young Engineer, Kaoshiung Division Chinese Engineer Association (1995) List Who's who in the world, International Directory of Distinguished Leadership, etc.
Patents
Patent of Taiwan “Surface acoustic wave filter implementing diamond and microwave micro-strip line,”TW241065B “Electronic device having pin electrode with slight warpage,”TW237316B “Method of manufacturing light emitting diode package and structure of the same,”TW235511B “Method for manufacturing wafer lever chip scale package,”TW234868B “Method for manufacturing wafer lever chip scale package and structure from the same,”TW233681B “Interposer of probe card,”TW265615Y “Wafer level chip scale package with redistribution wires by wire bonding and method for manufacturing the same,”TW231024B “Method and solution for selectively etching III-V semiconductor,”TW229379B “Improved probe head,”TW255943Y “Low noise probe head,”TW253771Y “Structure of probe card,”TW248021Y “Probe head with groove,”TW249210Y “Pluggable probe head,”TW242848Y “Probe head with chip scale package type probe unit,”TW243782Y “Probe head for inhibiting cross talk,”TW243650Y “Interposer for modular probe card,”TW243649Y “Probe head for decreasing noise,”TW244442Y “Interposer with bonding-wire contacts,”TW243781Y “Modular probe head,”TW221015B “Modular probe head,”TW220932B “Wafer level package for integrated circuits,”TW586202B “Wafer level chip scale package with improved pin leads strength,”TW570296Y “Wafer level packaging process and structure thereof,”TW589726B “Wafer level packaging process for protecting bump electrodes,”TW588422B “Probe head for eliminating noise,”TW586627Y “High frequent probe head with wiring improved structure,”TW578920Y “Wafer level package with copper interconnecting chip,”TW570300Y “Method for manufacturing probe heads for probing integrated circuits,”TW594027B “Mems probe head,”TW558062Y “Flat high frequency probe card,”TW576506Y “Elastic probe card,”TW590220Y “Probe card assembly,”TW564948Y “Modular probe card with coaxial transmitter,”TW242696Y “Interface card structure for semiconductor testing,”TW551497Y “Flexible printed circuit with elastic bump electrodes and method for making the same,”TW543348B “Probe head and method for forming probe needles on the probe head,”TW577989B “Flat modular probe card,”TW587700Y “Adjustable probe head assembly,”TW590221Y “Touching-type electrically connecting device for a probe card,”TW567318B “Probe card assembly with cross stacking silicon substrates,”TW549450Y “Dual flip-chip cross stack structure,”TW542402Y “Dual-chip stack structure with bonding wires and bumps,”TW543920Y “Flexible printed circuit for replacing bonding wires,”TW544073Y “Probe card assembly for probing a wafer,”TW540819Y “Probe card assembly with multi silicon substrates,”TW549449Y “Probe card assembly,”TW549448Y “Probe card assembly with exchangeable probe head,”TW547643Y “Wafer level burn-in board and method for forming the same,”TW557557B “Wafer-level chip scale package and method for fabricating the same,”TW556291B “Electrical device with needle electrodes and method for forming the same,”TW535226B “MEMS method for making anisotropic conductive board,”TW588014B “Method for making anisotropic conductive board,”TW556231B “Method for forming conductive wirings of elastic bumps,”TW536784B “Modular probe card assembly,”TW545583Y “Probe card assembly with variability of connecting paths,”TW537496Y “Method for manufacturing probes on a substrate and a probe card with the probes,”TW562932B “Probe card with full wafer contact configuration,”TW540716Y “Probe device with micro penetration,”TW540712Y “Probe card with needle fixing substrate and method for making the needle fixing substrate,”TW562931B “Electrical contactor with elastic bumps and method for making the same,”TW562936B “Method for making 3-D macro elastic probe devices by MEMS technique,”TW562930B “Method and application for making 3-D macro elastic probe devices by MEMS technique,”TW513380B “Probe card for probing a semiconductor wafer,”TW526919Y “Probe card for testing semiconductor wafer,”TW523095Y “Probe card for testing semiconductor device,”TW523091Y “A probing method for testing with high frequency,”TW504788B “A probe card for avoiding signal interference,”TW513575B “A method for manufacturing needles with metal shielding tubes,”TW495895B “Probing card with elastic vertical probe,”TW516627Y “Method of making the resilient probe needles,”TW221191B “Probe card with resilient probe needles,”TW539132Y “A method of manufacturing the probe needles,”TW517320B “A probe card assembly,”TW511712Y “Wafer level burn-in testing method,”TW478085B Patent of U.S.A. “ Modularized probe card for high frequency application probing ,”US7088118 “ Modularized probe head ,”US6946860 “ Probe card assembly ,”US6853205 “ Modularized prode card with compressible electrical connection device,”US6781392 “ Modularized probe card with coaxial transmitters ”，US6812720 “ Method of surface treatment on the improvement of electrical properties for doped silicon oxides (SiO2) films, ”US6689645 “ Flip-chip type semiconductor device for reducing signal skew ,”US6686615 “ Modular probe card assembly ,”US6621710 “Method for fabricating metal oxide semiconductor field effect transistor (MOSFET),”US6326317 “Liquid phase deposition method for forming silicon dioxide film on HgCdTe or other II-VI semiconductor substrate,”US6004886 “Method for forming SiO2 on GaAs substrate by liquid phase deposition with NH4Oh treatment,”US5998304 “Method for forming oxide film on III-V substrate,”US5958519 “Vertical cavity surface emmitting lasers with transparent electrodes,”US5115441 “Method of making a semiconductor laser,”US5314838 Patent of other countries “Vertical cavity surface emitting lasers with transparent electrodes,”KR127911 “Vertical cavity surface emitting lasers with transparent electrodes,”SG9590329 “Vertical cavity surface emitting lasers with transparent electrodes,”HK188895 “Transparent conductive metal oxide contacts in vertical-injection top-emitting quantum well lasers,”EP0497052 “Method for making a semiconductor laser,”EP0495301 “Method for making a semiconductor laser,”DE69104342T “Vertical cavity surface emitting lasers with transparent electrodes,”DE69104342D “Vertical Cavity Surface Emitting Lasers with Transparent Electrodes,”CA2054404 “Manufacture of semiconductor laser ,”JP6090057 “Vertical cavity surface emitting lasers with transparent electrodes,”JP4276681
Publication List
A. Refereed Papers Jian-An Hou, Chieh-Pin Chang, Jiong-Guang Su, Chih-Wei Chen, Tsyr-Shyang Liou, Shyh-Chyi Wang and Yeong-Her Wang, 2007,” A Low Supply Voltage VCO Implemented by A Single Common-Source 90nm CMOS Transistor,” January, IEEE Microwave and Wireless Components Letters Yu-Ju Lin, Chih-Chieh Yeh,Sheng-Feng Chung, Li-Ming Huang, Ten-Chin Wen and Yeong-Her Wang, 2006 ”A Solid-State Microelectrochemical Transistor Based on Conjugated Polymer,” accepted by Applied Physics Letters Po-Wen Sze, Jian-Jiun Huang, Dei-Wei Chou, and Yeong-Her Wang, 2006, “Study of Diffusion Barrier for Au Metal on Liquid Phase Oxidized GaAs,” accepted by J. of Vacuum Science Technology, B, Nov/Dec . 2006 Chien-Jung Huang, Pin-Hsiang Chiu, Yeong-Her Wang, Wen-Ray Chen and Teen-Hang Meen, “Electrochemically Controlling the Size of Gold Nanoparticles,”Journal of The Electrochemical Society. (SCI) Chien-Jung Huang, Pin-Hsiang Chiu, Yeong-Her Wang, Wen-Ray Chen and Teen-Hang Meen, “Synthesis of the gold nanotubes by Electrochemical Technique,” Journal of The Electrochemical Society. (SCI) C. H. Lin, H. K. Huang, H. Z. Liu, C.K. Chu, C. C. Liu, C. H. Chang, C. L. Wu, C. S. Chang and Y. H. Wang, 2006” A Single Supply, High Linearity 2 W PA MMIC for WLAN Applications Using Quasi-Enhancement Mode PHEMT,” IEEE Microwave and Wireless Components Letters, Nov. 2006 Hou-Kuei Huang, Cieh-Pin Chang, Mau-Phon Houng and Yeong-Her Wang, 2006, ” Current-Dependent Hot-Electron Stresses on InGaP-gated and AlGaAs-gated Low Noise PHEMTs,” Microelectronics Reliability (97/208=46.6%, 0.724) H.K. Huang, C.S. Wang, M.P. Houng and Y.H. Wang, 2006, "Hot-Electron Effects on AlGaAs/InGaAs/GaAs PHEMT’s under Accelerated DC Stresses,” Microelectronics Reliability (97/208=46.6%, 0.724) Chieh-Pin Chang, Jian-An Hou, Jiong-Guang Su, Chih-Wei Chen, Tsyr-Shyang Liou, Shyh-Chyi Wong and Yeong-Her Wang 2006, “A high gain and low supply voltage LNA for the direct conversion application with 4 KV HBM ESD protection in 90 nm RF CMOS,” IEEE Microwave and Wireless Components Letters, Nov. 2006 Jui-Chieh Chiu, Jih-Ming Lin, Chieh-Pin Chang, and Yeong-Her Wang , 2006, ”A Novel 3dB Quadrature Coupler Suitable for PCB Circuit Design,” IEEE Trans. on Microwave Theory and Technologies, vol.54, no.9, pp 3521-3525, Sep. 2006 K.F. Yarn, B.K. Lew, Y.H. Wangand M.P. Houng, and M.C. Chure, 2006, ” Thermal electrio- feedback model for multi-emitter finger power heterojunction bipolar transistor, Part II: current crush phenomenon,” International Journal of Electronics, Vol. 93, No.9,. pp581-588, Sep. 2006 K. F. Yarn, B.K. Lew, Y. H. Wangand M. P. Houng, 2006,”Investigation of thermal effects on the single-finger heterojunction bipolar transistors,” International Journal of Electronics, Vol. 93, No. 8, pp521-532, Aug. 2006 K.F. Yarn, B.K. Lew, Y.H. Wangand M.P. Houng, and M.C. Chure, 2006, ” Thermal electrio- feedback model for multi-emitter finger power heterojunction bipolar transistor, Part I: Temperature profile,” International Journal of Electronics, vol. 93, no. 7, pp439-455, July. 2006 Jui-Chieh Chiu, Jih-Ming Lin, and Yeong-Her Wang, “A Novel Planar Three-way Power Divider,” IEEE Microwave and Wireless Components Letters, vol.16, no.8, pp 449-451, Aug. 2006 Po-Wen Sze, Kuan-Wei Lee, J.J. Huang, Nan-Ying Yang and Yeong-Her Wang, 2006 “Liquid Phase Oxidation for InGaP/GaAs HBT Passivation,” Semiconductor Science and Technology, vol. 21,. pp1160-1166, Aug. 2006 Chien-Jung Huang, Yeong-Her Wang,, Pin-Hsiang Chiu, Ming-Chang Shih and Teen-Hang Meen, 2006, “Electrochemical Synthesis of Gold Nanocubes,” Materials Letters, Vol.60, Issue 15 pp 1896-1900 , July. 2006 Chien-Jung Huang, Pin-Hsiang Chiu and Yeong-Her Wang, Wen-Ray Chen and Teen-Hang Meen “Synthesis of the Gold Nanocubes by Electrochemical Technique,”Journal of the Electrochemical Society, Vol. 153, no.8, pp. D129-D133 (SCI) , June. 2006 Jui-Chieh Chiu, Jih-Ming Lin, Mau-Phon Houng, and Yeong-Her Wang ,”A PCB-compatible 3dB Coupler Using Microstrip-to-CPW Transitions,” IEEE Microwave and Wireless Components Letters, vol.16, no.6, pp369-371, June. 2006 H. Z. Liu, C. H. Lin, C. K. Chu, H. K. Huang, M.P. Houng, C. H. Chang, C. L. Wu, C. S. Chang, and Y. H. Wang ,2006 ”A Self-bias Ku-band 1-Watt PHEMT Power Amplifier MMIC With A Compact Source Capacitor,” IEEE Microwave and Wireless Components Letters, vol.16, no.6, pp330-332, June. 2006 H.J. Chen, T.H. Huang, L.S. Chen, J.H Horng, Y.H. Wang and M.P. Houng, “A compact bandpass filter with enhanced stopped characteristics by an asymmetric cross-shape defected ground structure, IEEE Trans. on Ultrasonics, Ferroelectrics and Frequency control,” 1.819, 4/27,35/208 2006 T.H. Huang, H.J. Chen, C.S. Chang, L.S. Chen, N.F. Wang, Y.H. Wang and M.P. Houng,”A novel compact ring dual-mode filter with adjustable second-passband for dual-band applications,” IEEE Microwave and Wireless Components Letters, vol.16, No.6, pp360-362. June. 2006 K.F. Yarn, K. L. Lew, Y.H. Wangand M.P. Houng, 2006,” Properties of the GaAs pseudo heterojunction bipolar transistor,” International Journal of Electronics, Vol. 93, No. 1, January 2006, 19–27, Jan. 2006 H.J. Chen, T.H. Huang, C.S. Chang, L.S. Chen, N.F. Wang, Y.H. Wang and M.P. Houng, “A novel cross-shape DGS applied to design ultra-wide stopband low-pass filters,” IEEE Microwave and Wireless Components Letters , vol.16, No.5, pp252-254, May 2006 Jui-Chieh Chiu, Chieh-Pin Chang, Mau-Phon Houng and Yeong-Her Wang,2006”A novel 12 to 36 GHz balanced frequency tripler,” IEEE Microwave and Wireless Components Letters, vol.16, no.1, pp19-21, Jan. 2006 H.K. Huang, C.S. Wang, M.P. Houng and Y.H. Wang, ”Hot electron effects on AlGaAs/InGaAs/GaAs PHEMTs under accelerated DC stresses,” Microelectronic Reliability,2005 H.K. Huang, C.S. Wang, C.P. Chang, Y.H. Wang, C.L. Wu, and C.S. Chang, ”Noise characteristics of InGaP-gated PHEMTs under high current and thermal accelerated Stresses,” IEEE Trans. Electron Device, 2005 C.K. Chu, H.K. Huang, H.Z. Liu, R.J. Chiu, C.H. Lin, C.C. Wang, M.P. Houng, Y.H. Wang, C.C. Hsu, W. Wu, C.L. Wu and C.S. Chang, ”A fully matched high linearity 2W PHEMT MMIC power amplifier for 3.5GHz applications,” IEEE Microwave and Wireless Compoents Letters, 2005 H.Z. Liu, H.K. Huang, C.C. Wang, R.J. Chiu, C.K. Chu, C.H. Lin, M.P. Houng, Y.H. Wang, C.H. Chang, C.L. Wu and C.S. Chang, ”A low distortion 25W power amplifier with a 50 mm PHEMT for PHS base station applications,” IEEE Circuits and Device Magnize, July 2005 H.Z. Liu, H.K. Huang, C.C. Wang, R.J. Chiu, C.K. Chu, C.H. Lin, M.P. Houng, Y.H. Wang, C.H. Chang, C.L. Wu and C.S. Chang, ”A 38dBm power amplifier using AlGaAs/InGaAs/GaAs PHEMT for S-Band applications,” Microwave and Optical Technology Letters, vol. 44, pp.311-313, Feb. 2005 K.W. Lee, P.W. Sze, M.P. Houng and Y.H. Wang, 2005 ”AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor with a liquid phase oxidized AlGaAs oxidized gate,” Solid State Electronics, 49, 213-217 2005 N.F. Wang, I.T. Tang, H.J. Chen, M.P. Houng and Y.H. Wang, “Investigation of a novel microwave surface acoustic wave filter under different piezoelectric substrate,” Jpn. J. Appl. Physics, vol.43, no.12, 2004 H.J. Chen, M.H. Weng, J.H. Horng, M.P. Houng and Y.H. Wang, 2004 “ Wideband and low-loss triangular patch dual-mode bandpass filter using quasi-fork tapped I/O,” Microwave and OpticalTechnology Letters, vol. 43, no.2, pp99-101, Oct. 20, 2004 I-Tseng Tang, Han-Jan Chen, W. C. Hwang, Y. C. Wang, Mau-Phon Houng and Yeong-Her Wang, ”Applications of piezoelectric ZnO film deposited on diamond-like carbon coated onto Si substrate under fabricated diamond SAW filter,” Journal of Crystal Growth, Volume 262, Issues 1-4, 15 February 2004, Pages 461-466 Hsun-Chin Chen, Ming-Hang Weng, Chen-I Hung, Mau-Phon Houng and Yeong-Her Wang ,"Effect of Ni substitution for Cu on the dielectric properties of Y2Ba(Cu1−xNix)O5 solid solutions ,“ Physica B: Condensed Matter, Volume 349, Issues 1-4, 15 June 2004, pp. 304-309 C.I. Liao, P.W. Sze, M.P. Houng and Y.H. Wang, 2004, “Very high selective etching of GaAs/Al0.2Ga0.8As using citric buffer solution for gate recess process to pseudomorphic high electron mobility transistor applications,” Jpn. J. Applied. Physics, Letter, vol.43, No.6B, pp. L800 - L802, Japan I. Liao, C.L. Lin, M.P. Houng and Y.H. Wang, 2004, “High selectivity etching for GaAs over Al0.2Ga0.8As using citric acid/H2O2/H2O,” Electrochemistry and Solid State Letters, Nov. no.11 C. Liu, Y.H. Chen, M.P. Houng, Y.H. Wang, W.B. Chen, Y.K. Su,and S.M. Chen, 2004,“Improved light output power of GaN LEDs by selective region activation,” IEEE Photonics Technology Letters, Vol.16, No.6, pp1444-1447, USA J.J. Huang, P.W. Sze, W.C. Lai, Y.H. Wang, and M.P. Houng, 2004“AlGaN/GaN MOSHFET with a SiO2 gate by liquid phase deposition,” Physical Scripta, vol.T114,pp94-97 K.K. Chong, H.C. Chen, M.P. Houng, Y.H. Wang, and S.T. Wang,2004,”Suppression of theburn-in effect in InGaP/GaAs heterojunction bipolar transistor,” J. Appl. Phys., vol.95, No.4, pp2079-2083, 2004 K.W. Lee, Y.H. Wang, and M.P. Houng, 2004, “Oxidation of AlGaAs and its application to PHEMT by liquid phase chemical enhanced method,” Jpn. J. Applied. Physics vol.43, no.7A, pp4087-4091, Japan C.C. Wang, H.K. Huang, Y.H. Wang, M.P. Houng C.L. Wu, and C.S. Chang, 2004,”Fabrication of Schottky GaAs Diode by Liquid Phase Chemical-Enhanced Oxidation,” Solid State Electronics, vol.48, pp1683-1686 N. Chen, Y.H. Wang, M.P. Houng and J.C. Chiang, 2004, "Dresselhaus-like spin splitting in (hkl) InAs/GaSb superlattices,”Semiconductor Science and Technology, volume 19, issue 5, pp626 – 629, 2004 C.C. Liu, W.T. Wang, M.P. Houng and Y.H. Wang, 2004, “ TiN enhancement of output performance for light-emitting diodes under high injection current,” Jpn. J. Appl. Physics, vol.43, No.2, pp594-597, Japan S.H. Tsai, N.F. Wang, J.H. Horng, M.P. Houng, Y.H. Wang, 2004 “Direct bonding ofrecessed-structure SAW filter on silicon substrate,“ IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, vol.51, No.7, pp913-913, July 2004 S.H. Tsai, N.F. Wang, M.P. Houng, Y.H. Wang, 2003 “Proton-exchanged wet etching of recessed-structure SAW filter,“ IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, vol.50, No.9, pp1219-1222, September 2003 H.C. Chen, B.H. Tseng, M.P. Houng and Y.H. Wang, 2003 “Titanium nitride diffusion barrier for copper metallization on Gallium Arsenide,“ Thin Solid Films, vol.445, pp112-117, 2003 I.T. Tang, Y.C. Wang, W.C. Hwang, C.C. Hwang, N.C. Wu, M.P. Houng and Y.H. Wang, ”Investigation of piezoelectric ZnO film deposited on diamond like carbon coated onto Si substrate under different sputtering conditions, “ J. Crystal Growth, 2003 H.R. Wu, K.W. Lee, T.B. Nian, D.W. Chou, P.W. Sze, Y.H. Wang, et al, "Liquid phase deposited SiO2 on GaN," to appear in Materials Chemistry and Physics, 2003 D.W. Chou, H.H. Wang, Y.H. Wang and M.P. Houng, "Electrical Properties of liquid phase oxidized GaAs oxide layers,”Materials Chemistry and Physics, vol.78, pp772-777, 2003 S.H. Tsai, I.T. Tang, N.P. Houng and Y.H. Wang, ”A Design Rule of Surface Acoustic Wave filter,” J. of Materials Science and Engineering, vol.34, no.4, pp231-238, 2002 C.C. Liu, W.T. Wang, M.P. Houng, Y.H. Wang and S.M. Chen, “Titanium nitride as spreading layers for AlGaInP visible LEDs,” IEEE Photonics Technology Letters, Vol.14, No.12, pp1665-1667, Dec. 2002, USA C.J. Huang, Z.S. Ya, J.H. Horng, M.P. Houng and Y.H. Wang, “GaAs metal-oxide-semiconductor field effect transistors fabricated with low temperature liquid-phase-deposited SiO2,” Jpn. J. Appl. Phys. Vol.41. part I, no.9, pp55561-5562, 2002, Japan K.W. Lee, D.W. Chou, H.R. Wu, J.J. Huang, Y.H. Wang, M.P. Houng, S.J. Chang and Y.K. Su, "GaN MOSFET with a liquid phased deposited gate," Electronics Letters, vol.38, no.15, pp829-830, 2002, U.K. D.W. Chou, K.W. Lee, J.J. Huang, P.W. Sze, H.R. Wu, Y.H. Wang, and M.P. Houng, S.J. Chang and Y.K. Su, "AlGaN/GaN metal oxide semiconductor FET based on a liquid phase deposited oxide gate,”Jpn. J. Appl. Phys. Pt.II, pp748-750, 2002, Japan S.H. Tsai, I.T. Tang, N.P. Houng and Y.H. Wang, ”A Design Rule of Surface Acoustic Wave filter,” J. of Materials Science and Engineering, vol.34, no.4, pp231-238, 2002 C.C. Liu, W.T. Wang, M.P. Houng, Y.H. Wang and S.M. Chen, “Titanium nitride as spreading layers for AlGaInP visible LEDs,” IEEE Photonics Technology Letters, Vol.14, No.12, pp1665-1667, Dec. 2002, USA C.J. Huang, Z.S. Ya, J.H. Horng, M.P. Houng and Y.H. Wang, “GaAs metal-oxide-semiconductor field effect transistors fabricated with low temperature liquid-phase-deposited SiO2,” Jpn. J. Appl. Phys. Vol.41. part I, no.9, pp55561-5562, 2002, Japan K.W. Lee, D.W. Chou, H.R. Wu, J.J. Huang, Y.H. Wang, M.P. Houng, S.J. Chang and Y.K. Su, "GaN MOSFET with a liquid phased deposited gate," Electronics Letters,vol.38, no.15, pp829-830, 2002, U.K. D.W. Chou, K.W. Lee, J.J. Huang, P.W. Sze, H.R. Wu, Y.H. Wang, and M.P. Houng, S.J. Chang and Y.K. Su, "AlGaN/GaN metal oxide semiconductor FET based on a liquid phase deposited oxide gate,” Jpn. J. Appl. Phys. Pt.II, pp748-750, 2002, Japan I.T. Tang, F.L. Jeng, J.H. Horng, M.P. Houng and Y.H. Wang, ”A novel microwave microstrip surface acoustic surface wave filter with gigahertz band low-loss wide bandwidth for broad spectrum communication system,” Jpn. J. Appl. Phys. Vol.41, Pt.I, May, pp2974-2977, 2002, Japan C.N. Chen, Y.H. Wang, M.P. Houng and J.C. Chiang, "Orientation-dependence of interface inversion asymmetry effect on InGaAs/InP quantum wells,”Physica Solidi Status( b), vol.231, pp426-436, 2002, Germany C.N. Chen, Y.H. Wang, M.P. Houng, J.C. Chiang and Z.M. Chau, "K.p finite difference method: the optimum step distance in the differential calculation,”Physics Letters A 295, pp226-228, March 25 2002. J.H. Chen, C.T. Wei, S.M. Hung, S.C. Wong and Y.H. Wang,“ Breakdown and stress-induced oxide degradation mechanisms in MOSFETs,”Solid State Electronics, vol.46, no.11, pp1965-1974, 2002, U.K. M.P. Houng, Y.H. Wang, K.K. Chong, C.H. Chu, K.C. Feng, C.I. Hung, and W.L. Li, "Self-consistent simulation on the modal gain of graded-index separate confinement heterostructure quantum-well lasers,” Optical and Quantum Electronics 34, pp975-985, 2002, Netherland M.P. Houng, Y.H. Wang, J.H. Horng and S.J. Hsiang, ”High capacitance density in a Ta2O5 folded capacitor chip,” Jpn. J. Appl. Phys., Pt. I, No.3, March, pp1311-1314, 2002, Japan J.Y. Wu, H.H. Wang, Y.H. Wang and M.P. Houng, "A planarized shallow-trench-isolation for GaAs MOSFET's fabrication using liquid phase chemical enhanced oxidation process,”IEEE Electron. Device Letters, May, vol.23, No.5, pp237-239, 2002, USA J.H. Chen, C.T. Wei, S.C. Wong and Y.H. Wang, "Thin oxide breakdown breakdown mechanism of constant voltage stress on MOSFETs,” Physica Scripta, T101, pp10-13, 2002, Sweden C.I. Liao, K.F. Yarn, C.L. Lin and Y.H. Wang, "Directly growing high quality InxGa1-xAs strained layers on misoriented GaAs substrates grown by metalorganic chemical vapor deposition,” Jpn. J. Appl. Physics, vol.41, Pt II, No.3A, pp1247-1252, March, 2002, Japan H.K. Huang, Y.H. Wang, C.L. Wu, J.C. Wang and C.S. Chang, "Super low noise InGaP-gated PHEMT,”IEEE Electron Device Letters, vol.23, no.2, pp70-72, Feb. 2002, USA C.N. Chen, Y.H. Wang, M.P. Houng and J.C. Chiang, “Bond orbital model with microscopic interface effects,” Jpn. J. Appl. Phys., vol.41, No.1 (Jan), Pt I, pp36-41, 2002 D.W. Chou, R.F. Lou, H.H. Wang, Y.H. Wang and M.P. Houng, "Properties of sulfer-passivated GaAs oxide layers grown by liquid phase chemical-enhanced technique,”J. Electronic Materials. Pp 71-75, Jan, 2002, USA J.H. Chen, S.C. Wong and Y.H. Wang, “DC pulse hot-carrier-stress effects on gate-induced drain leakage current in n-channel MOSFETS,”IEEE Tr. Electron Device, vol.48, no.12, pp2746-2753, 2001, USA J.Y. Wu, P.W. Sze, Y.H. Wang and M.P. Houng, " Temperature effect on gate leakage currents in gate dielectric films of GaAS MOSFET,”Solid State Electronics, vol.45, No.12, pp 1999-2003, Dec, 2001 W.J. Chang, M.P. Houng and Y.H. Wang, "Electrical propertie sand modeling of ultrathin impurity-doped silicon dioxides,”J. Appl. Phys., Nov.15, vol.90, no.10, pp5171-5179, 2001 W.J. Chang, M.P. Houng and Y.H. Wang, 2001, "Charcaterization on the current-voltage curves of ultra-thin silicon dioxides incorporated with fluorine and/or nitrogen,” Semicon. Sci. Technol. Vol.16, no.12, pp961-965, 2001 W.J. Chang, M.P. Houng and Y.H. Wang, "Trap concentration dependence on Electrical Properties of annealed ultra-thin fluorinated silicon oxides,” Jpn. J. Appl. Phys. Part I, vol.40, 2001 W.J. Chang, M.P. Houng and Y.H. Wang, ”Simulation of stress-induced leakage current in silicon dioxides: a modified trap-assisted tunneling model considering Gaussian-distributed traps and electron energy loss,” J. Appl. Phys. Jun.1, vol.89, No.11, pp6285-6293, 2001, USA. J.Y. Wu, P.W. Sze, Y.M. Deng, G.W. Huang, Y.H. Wang and M.P. Houng, 2001, "Properties of GaAs MOSFET fabricated with gate dielectric grown by liquid-phase selective oxidation method," Solid State Electronics. 45, No.7, July, pp636-638, 2001 D.W. Chou, H.H. Wang, Y.H. Wang and M.P. Houng, "Effect of post annealing on GaAs oxides grown by liquid phase chemical-enhanced technique,” Jpn. J. Appl. Phys. March, vol.39 (2000), suppl.39, pp224-227, 2001. M.P. Houng,Y.H. Wang, J.H. Horng, et al, "Effects of annealing on tantalum pentoxide films in N2 and N2O gas environments,” Jpn. J. Appl. Phys. Pt. I, vol.40, No.8, Aug. pp 5079-5084, 2001, Japan J.H. Chen, S.C. Wong and Y.H. Wang, “An analytical three-terminal band-to-band tunneling model on GIDL in MOSFET,” IEEE Tr. Electron Device, vol.48, no.7 pp1400-1405, 2001, USA J.Y. Wu, H.H. Wang, Y.H. Wang and M.P. Houng, ”GaAs MOSFET fabrication with a very low temperature growth gate oxide,” IEEE Tr. Electron. Device, April, vol.48, no.4, pp635-638, 2001, USA J.Y. Wu, H.H. Wang, Y.H. Wang and M.P. Houng, ”Fabrication of depletion mode GaAs MOSFET with a selective oxidation process by using metal as the mask,”IEEE Electron Device Letter, vol.22, no.1, pp2-4, 2001, USA. M.P. Houng, Y.H. Wang, C.J. Huang, S.P. Huang and J.H. Horng, “Quality optimization of liquid phase deposition SiO2 films on GaAs,”Solid State Electronics, vol.44, 1917, 2000 M.P. Houng, Y.H. Wang, K.K. Chong, C.I. Hung, C.H. Chu, and J.Y. Miaw, "Heat generation approximation in modulation-doped field effect transistors by the energy relaxation between carrier and photon,” J. Appl. Phys. Vol.33, pp2553-2559, 2000, USA D.W. Chou, H.H. Wang, J.Y. Wu, Y.H. Wang and M.P. Houng, ”Growth model, properties, and application of GaAs oxide film grown by low temperature liquid phase chemical enhanced method,” J. Vacuum Technology, vol.13, no.3, pp26-32, 2000 (in Chinese). W.J. Chang, M.P. Houng and Y.H. Wang, ”Effects of surface treatments on the electrical properties of fluorinated silicon dioxide,” J. Electrochemical Society, vol.147, no.9, pp3467-3471, 2000, USA. H.H. Wang, D.W. Chou, J.Y. Wu, Y.H. Wang and M.P. Houng, ”Surface oxidation kinetics of GaAs oxide growth by liquid phase chemical-enhanced technique,” Jpn. J. Appl. Phys., pt1, vol.39, 7B,pp4477-4480, 2000, Japan H.H. Wang, D.W. Chou, J.Y. Wu, Y.H. Wang and M.P. Houng, ”Effect of crystal orientation and doping on the activation energy GaAs oxide growth by liquid phase method,” J. Appl. Phys., vol.87, no.5, pp2629-2633, 2000, USA. K.K. Chong, M.P. Houng,Y.H. Wang, C.H. Chou, C.I. Hung, ”The dark current caused by the field-induced mixing effect on bound-to-continum quantum-well infrared photodetectors,” J. Phys. D., Appl. Phys. 33, pp162-169, 2000, U.K. C.J. Huang, M.P. Houng, Y.H. Wang and H.H. Wang, "Effect of chemical modification on growth silicon dioxide films on gallium arsenide prepared by the liquid phase deposition method,” J. Appl. Phys. vol.86, no.12, pp7151-7155, 1999, USA. W.J. Chang, M.P. Houng and Y.H. Wang, "Fourier transfer infrared characterization of moisture absorption in SiOF films,”Jpn. J. Appl. Phys. vol.38, pt. I, No.8, Aug. pp4642-4647, 1999, Japan. M.P. Houng, Y.H. Wang and W.J. Chang, " Current transport mechanism in trapped oxides: A generallized trap-assisted tunneling model,” J. Appl. Phys. vol.86, no.3, Aug.1, pp1488-1491, 1999, USA. N.F. Wang, M.P. Houng, and Y.H. Wang, "Investigation of low temperature deposition of silicon dioxide on indium phosphide by liquid phase deposition, "Jpn. J. Appl. Phys. vol.38, Pt. I, No.10, Oct. pp6071-6072, 1999, Japan. N.F. Wang, M.P. Houng, and Y.H. Wang, "CO2 laser annealing on the fluoriated silicon oxide films,”Jpn. J. Appl. Phys. vol.38, part 1. No.9A, Sep. pp5227-5231, 1999, Japan. H.H. Wang, J.Y. Wu, Y.H. Wang and M.P. Houng, ”Effects of PH value on the kinetics of liquid phase chemical-enhanced oxidation of GaAs," J. of Electrochemical Society vol.146, pp94-98, 1999, USA. N.F. Wang, W.J. Chang, M.P. Houng, Y.H. Wang and C.J. Huang, ”Deposition of high quality silicone dioxe on Hg1-xCdxTe by low temperature liquid-phase deposition method,” J. Vac. Sci. Technol., A, vol. 17, no.1, pp102-107, 1999, USA. M.P. Houng, Y.H. Wang, N.F. Wang, W.J. Chang and C.I. Hung, "Effect of fluoriene on metal-insulator-silicon solar cell performance with a low-temperature deposited SiO2 layer,” Materials Chemistry and Physics, 59, pp36-41, 1999. J.Y. Wu, H.H. Wang, Y.H. Wang and M.P. Houng, ”A GaAs MOSFET with a liquid phase oxidized gate”IEEE Electron. Device Letters, vol.20, no.1, pp18-20, 1999, USA. T.K. Chiang, Y.H. Wang, and M.P. Houng, "Modelling the threshold voltage and subthreshold swing of short-channel SOI MESFETS”, Solid State Electronics, 43, pp123-129, 1999, U.K. H.H. Wang, D.W. Chou, Y.H. Wang, and M.P. Houng, ”Properties of GaAs oxides prepared by liquid phase chemical-enhanced technique”, Physica Scripta, vol. T79, pp239-242, 1999, Sweden. B. Conference papers a. International Conference Che-Hung Lin, Chi-Ming Lin, Jui-Chieh Chiu, Tzong-Yow Tsai and Y. H. Wang, ”A Ka-band Monolithic Doubly-Balanced Mixer,” IEEE Compound Semiconductor Integrated Circuits Symposium, San Antonio, Texas, USA, Nov. 12-15. 2006 C. H. Lin, H. Z. Liu, C. K. Chu, H. K. Huang, Y. H. Wang C. C. Liu, C. H. Chang, C. L. Wu and C. S. Chang , ”A Fully Matched Ku-band 9W PHEMT MMIC High Power Amplifier,” IEEE Compound Semiconductor Integrated Circuits Symposium, San Antonio, Texas, USA, Nov. 12-15. 2006 Yeong-Her Wang and Kuan-Wei Lee, ”Liquid Phase Oxidation on GaAs-based Transistor Applications,” ICSICT2006, Shanghai, Oct.23-26, 2006 (invited) Yu-Ju Lin, Chih-Chieh Yeh, Li-Ming Huang, Ten-Chin Wen and Yeong-Her Wang,” Plasma Treatment on the Plastic Substrates for Liquid Phase Deposited SiO2 Films for Flexible Electronics Applications,” ICSICT2006, Shanghai, Oct. 23-26, 2006 Kuan-Wei Lee, Kai-Lin Lee, Xian-Zheng Lin,Chao-Hsien Tu, and Yeong-Her Wang,” Subthreshold Characteristics and High-Frequency Performance in InAlAs/InGaAs MHEMT with a Liquid Phase Oxidized InAlAs Gate,” ICSICT2006, Shanghai, Oct.23-26, 2006 Chih-Ming Lin, Hung-Ju Wei, Yi-Ting Wang, Shyh-Chyi Wang, and Yeong-Her Wang," A Novel Doubly-Balanced Folded Mixer for Low Supply Voltage and Direct Up-Conversion System,” ICSICT2006, Shanghai, Oct.23-26, 2006 C. H. Lin, H. Z. Liu, C.K. Chu, H. K. Huang, C. C. Liu, C. H. Chang, C. L. Wu C. S. Chang and Yeong-Her Wang, “A Ku/K-band PHEMT Diode Single-balanced Mixer,” ICSICT2006, Shanghai, Oct. 23-26, 2006 C. Wang, W. Lu, M. Houng, T. Yen, Y. Wang, C. Liu and C. Chu,” Enhancement of LED Light-Extraction Efficiency by Anodic Oxidation,” State-of-the-Art Program on Compound Semiconductors XLIV,May 9, 2006, of the 209th Meeting of The Electrochemical Society, Adams Mark Denver Hotel in Denver, Colorado, USA, May 7 - 12, 2006 H. K. Huang, C. P. Chang, M. P. Houng and Y. H. Wang,” Comparison of InGaP- with AlGaAs-gated Low Noise PHEMTs by Current-Dependent Hot-Electron Stress,” in Proceedings of IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong-Kong, Dec. 19-21, 2005, pp. 199-202. C. H. Lin, H. K. Huang, H. Z. Liu, C.K. Chu, M.P. Houng Y. H. Wang , C. C. Liu, C. H. Chang, C. L. Wu and C. S. Chang,” A Single-bias 2W PHEMT MMIC by Gate Zero-Bias Technique for C Band Applications,” in Proceedings of IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong-Kong, Dec. 19-21, 2005, pp. 191-194. H. Z. Liu, C. H. Lin, C. K. Chu, H. K. Huang, M. P. Houng, Y. H. Wang, C. H. Chang, C. L. Wu and C. S. Chang,” A Self-bias Ku-band 1-Watt PHEMT Power Amplifier MMIC With A Compact Source Capacitor,”in Proceedings of IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong-Kong, Dec. 19-21, 2005, pp. 207-210. Kuan-Wei Lee, Po-Wen Sze, Kai-Lin Lee, Mau-Phon Houng and Yeong-Her Wang,” InGaP PHEMT with a Liquid Phase Oxidized InGaP as Gate Dielectric,”in Proceedings of IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong-Kong, Dec. 19-21, 2005, pp. 609-613. C. K. Chu, H. K. Huang, H. Z. Liu, C. H. Lin, M.P. Houng, Y. H. Wang, C.H. Chang, C. L. Wu and C. S. Chang,” A Gate Zero-Bias 2W PHEMT Power Amplifier Operating at 3.5 GHz,” in Proceedings of IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong-Kong, Dec. 19-21, 2005, pp. 211-214. Kai-Lin Lee, Kuan-Wei Lee, Men-His Tsai, Po-Wen Sze, Mau-Phon Houng and Yeong-Her Wang, ” InAlAs/InGaAs Metamorphic High Electron Mobility Transistor with a Liquid Phase Oxidized InAlAs as Gate Dielectric,” in Proceedings of IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong-Kong, Dec. 19-21, 2005, pp. 613-616. C. J. Huang, Y. H. Wang, P. H. Chiu, P. H. Tseng, and K. C. Liao, “Synthesis of Gold Nanocubes by Electrochemical Technique,”International Symposium on Nano Science and Technology (ISNST), Tainan, Taiwan, 10-11 November 2005, pp. 105-106. C. J. Huang, Y. H. Wang, P. H. Chiu, T. H. Meen, W. C. Tzou, Y. F. Chu, S. H. Houng, and C. W. Wu, “Fabrication of Core@Shell Particles with Gold Nanoparticles Trapped Inside Amorphous Silica Shells,” International Symposium on Nano Science and Technology (ISNST), Tainan, Taiwan, 10-11 November 2005, pp. 29-30. K.W. Lee, N.Y. yang, P.W. Sze, M.P. Houng and Y. H. Wang ,”Liquid Phase Oxidation on InGaP and Its Application to InGaP/GaAs HBT Surface Passivation,” 17th Indium Phosphide and Related Materials Conference on 8-12 May 2005, pp516-519, at the Thistle Hotel, Glasgow. UK Chen-Kuo Chu, Hou-Kuei Huang, Hong-Zhi Liu, Ray-Jay Chiu, Che-Hung Lin, Chih-Cheng Wang, Yeong-Her Wang, Chuan-Chien Hsu, Wang Wu, Chang-Luen Wu and Chian-Sern Chang“A Fully Matched 8W X-band PHEMT MMIC High Power Amplifier,” pp137-140, Compound Semiconductor Integrated Circuit Symposium (CSICS), Oct. 24-27, Monterey, CA, USA K.W. Lee, Y.J. Lin, N.Y. Yang, Y.C. Lee,P.W. Sze, Y.H. wang and M.P. Houng,“ InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor with a liquid phase oxidized InGaP gate,” 2004 7th International Conference on Solid State and Integrated circuits Technology, Oct. 18-24, Beijing, China, Proceedings of 2004 7th International Conference on Solid State and Integrated circuits Technology, pp2301-2304.,2004 H.Z. Liu, H.K. Huang, C.C. Wang, Y.H. Wang, C.C. Hsu, W. Wu, C.L. Wu and C.S. Chang, ”High linearity power amplifier for PHS base station using a 50 mm AlGaAs/InGaAs/GaAs PHEMT, “2004 IEEE Asia-Pacific Conference on Circuits and Systems, Dec 6-9. Tainan, Taiwan Chen-Kuo Chu, Hou-Kuei Huang, Hong-Zhi Liu, Ray-Jay Chiu, Che-Hung Lin, Chih-Cheng Wang, Yeong-Her Wang, Chuan-Chien Hsu, Wang Wu, Chang-Luen Wu and Chian-Sern Chang,“A 3.5GHz 2W MMIC Power Amplifier Using AlGaAs/InGaAs/GaAs PHEMTs,” 2004 IEEE Asia-Pacific Conference on Circuits and Systems, Dec .6-9. Tainan, Taiwan H. K. Huang, C. S. Wang, Y. H. Wang, C. L. Wu, and C. S. Chang, “Hot Electron Effects on AlGaAs/InGaAs/GaAs PHEMTs under Accelerated DC Stresses and comparison with InGaP PHEMTs,"IEEE 2003 GaAs REL Workshop, San Diego, USA, Nov. 9, 2003 C. K. Chu, H.K. Houng, C.C. Wang, Y.H. Wang, C.C. Hsu,W. Wu, C.L. Wu and C.S. Chang, “A 3.3 V self-biased 2.4-2.5 GHz high linearity PHEMT MMIC power amplifier,“ 29th European Solid–State Circuit Conference, pp667-670, ESSCIRC, Estoril/Lisbon, Portugal, Sept. 16-18, 2003 J. J. Huang, P.W. Sze, W.C. Lai, Y.H. Wang, and M.P. Houng, “AlGaN/GaN MOSHFET with a SiO2 gate by liquid phase deposition, ” The 20th Nordic Semiconductor meeting, 2003, Tampere, Finland, Aug. 25-27, 2003 I.T. Tang,H.J. Chen, M.P. Houng and Y.H. Wang, “Factor considerations on the novel surface acoustic wave devices by using piezoelectrical materials,” IEEE Proceedings of International Symposium on Electronic Materials and Packaging, pp 457-462, 2002 H.J. Chen, I.T. Tang, M.P. Houng and Y.H. Wang, “Reliability issues on the novel surface acoustic wave notch filter,” IEEE Proceedings of International Symposium on Electronic Materials and Packaging, pp 106-111, 2002 C.S. Wang, H.K. Houng, Y.H. Wang, S.L. Wu, and C.S. Chang, “High reliability in low noise InGaP gated PHEMTs,” pp81-84, 2002 GaAs IC Symposium, Oct. 21-23, Monterey, CA, USA H.Z. Liu, C.C. Wang, Y.H. Wang and C.S. Chang, “A four-stage Ku-band 1 watt PHEMT MMIC power amplifier,” pp33-36, 2002 GaAs IC Symposium, Oct. 21-23, Monterey, CA, USA H.Z. Liu, Y.H. Wang, and C.S. Chang, ”C-band self-bias 29dbm PHEMT MMIC power amplifier,” Sep.18-20, 2002 International Conference on Solid State Devices and Materials (SSDM), pp636-637, Nagoya, Japan H.Z. Liu, Y.H. Wang, and C.S. Chang, ”S-band 38dbm power amplifier using PHEMT and FR4 substrate,” 2002 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (2002 AWAD), pp227-230, July 1-3, Hokkaido University, Sapporo, Japan H.K. Huang, Y.H. Wang, C.S. Chang, S.L. Wu and J.C. Wang, ”Superlow noise InGaP gated PHEMT,”2001 GaAs IC Symposium, Oct. 21-24, 2001, pp237-240, Baltimore, Maryland, USA H.R. Wu, T.B. Nian, D.W. Chou, Y.H. Wang, "Liquid phase deposited SiO2 on GaN" 19th Nodic semiconductor meeting," May 20-23, 2001, Copenhagon, Demark J.H. Chen, C.T. Wei, S.C. Wong and Y.H. Wang, ”Thin oxide breakdown mechanism of constant voltage stress on MOSFETs,” 19th Nodic semiconductor meeting, May 20-23, 2001, Copenhagon, Demark J.Y. Wu, H.H. Wang, P.W. Sze, Y.H. Wang and M.P. Houng, ” Depletion mode GaAs MOSFET with a low temperature selective grown oxide gate,” 27th International Symposium on Compound Semiconductors, 2-5, Oct. Monterey, CA, Proceedings of 2000 IEEE International Symposium on Compound Semiconductors, pp149-154, 2000 H.H. Wang, D.W. Chou, J.Y. Wu, Y.H. Wang and M.P. Houng, "A GaAs device isolation technique by liquid phase chemical-enhanced oxidation,” 30th European Solid-State Device Research Conference (ESSDERC 2000), Proceedings of the 30th European Solid State Device Research Conference, pp432-435, Sept. 11-13, 2000, Cork, Ireland H.H. Wang, Y.H. Wang and M.P. Houng, ”Surface oxidation kinetics of GaAs by liquid phase chemical-enhanced technique near room temperature,” International Symposium on surface science for micro- and Nano-Device Fabrication, ISSS-3, Nov.29-Dec.1, 1999, Waseda Uuniversity, Tokyo, Japan b. National Conference Kuan-Wei Lee, Kai-Lin Lee, Xian-Zheng Lin,Chao-Hsien Tu,Chih-Chun Hu, and Yeong-Her Wang, ” Near-Room-Temperature Selective Oxidation on InAlAs and Application on Metamorphic High Electron Mobility Transistors,” International Electron Devices and Materials Symposium(IEDMS) , Tainan, Dec. 8-10, 2006 Kai-Lin Lee, Kuan-Wei Lee, Xian-Zheng Lin, Chao-Hsien Tu and Yeong-Her Wang, ”Investigation of InAlAs/InGaAs MHEMT with a Liquid Phase Oxidized InAlAs Gate Dielectric,” International Electron Devices and Materials Symposium(IEDMS) . Tainan, Dec. 8-10, 2006 P. H. Chiu, C. J. Huang, Y. H. Wang, T. H. Meen, M. C. Shih and W. R. Chen, “Organic Solvent Synthesis of the Gold Nanodumbbell Structure by Electrochemical Approach,”Taiwan Vacuum Society, Taiwan, 17 February 2006. Journal of Vacuum Science award,Taiwan Vacuum Society ,2005 J.J. Huang, W.C. Chien, S.K. Lin, S.L. Lu, M.C. Tsai, Z.Y. Wu, P. W. Sze, M. P. Houng and Y. H. Wang,”High Al content in AlxGa1-xN on GaN buffer/sapphire grown by RFMBE,” ppD-101-104, MBE 2005 Taiwan, May 19-20, Hsin Chu, Taiwan S.L. Lu, W.C. Chien, J.J. Huang, S.K. Lin), M.C. Tsai, Z.Y. Wu, P. W. Sze, M. P. Houng and Y. H. Wang,”High quality GaN films grown on sapphire by RF-MBE without low temperature buffer layers,”ppD-108-111 MBE 2005 Taiwan, May 19-20, Hsin Chu, Taiwan K. W. Lee, N.Y. yang, P.W. Sze, M.P. Houng and Y. H. Wang,” Characteriszation of the InGaAs oxide prepared by liquid phase oxidation,Stress on AlGaAs & InGaP Low Noise PHEMTs,”the 2004 International Electron Devices and Materials Symposium (IEDMS), 20-23 Dec. 2004, Chaio-Tung University, Hsinchu, Taiwan, Proceedings of the 2004 International Electron Devices and Materials Symposium, pp435-437 C. K. Chu, H. K. Huang, H. Z. Liu, R. J. Chiu, C. H. Lin, Y. H. Wang, C. C. Hsu, C. L. Wu and C. S. Chang,”A Fully Matched 4W PHEMT MMIC High Power Amplifier for C-band Application,” the 2004 International Electron Devices and Materials Symposium (IEDMS), 20-23 Dec. 2004, Chaio-Tung University, Hsinchu, Taiwan, Proceedings of the 2004 International Electron Devices and Materials Symposium, pp525-528 S.H. Tsai, K.W. Chu, M.P. Houng and Y.H. Wang, “ The effect of crystallization for titanium nitride films as current spreading layers for AlGaInP LEDS, “Electronic Devices and Materials Symposia, EDMS2003, pp1-4, National Taiwan Ocean University, Keelung, Taiwan, Nov.21-22, 2003 C.H. Chen, K.K. Chong, M.P. Houng, Y.H. Wang and S.T. Lin, “ Improvement the burn-in effect in InGaP/GaAs heterojunction bipolar transistors by constant period of voltage stress,” Electronic Devices and Materials Symposia, EDMS2003, pp314-317, National Taiwan Ocean University, Keelung, Taiwan, Nov.21-22, 2003 K.K. Chong, C.H. Chen, M.P. Houng, Y.H. Wang and S.T. Lin, “ Systematic exploration the base current component dominant for the burn-in effect in InGaP/GaAs heterojunction bipolar transistors,” Electronic Devices and Materials Symposia, EDMS2003, pp292-295, National Taiwan Ocean University, Keelung, Taiwan, Nov.21-22, 2003 I.T. Tsang, H.J. Chen, H.L. Ho, M.P. Houng and Y.H. Wang, ”A general purpose touch panel for computers,” Electronic Devices and Materials Symposia, EDMS2003, pp950-954, National Taiwan Ocean University, Keelung, Taiwan, Nov.21-22, 2003 H.J. Chen, I.T. Tsang, C.C. Lu, M.P. Houng and Y.H. Wang, “The research of the novel microstrip surface acoustic wave filter for GHz range,” Electronic Devices and Materials Symposia, EDMS2003, pp460-464, National Taiwan Ocean University, Keelung, Taiwan, Nov.21-22, 2003 H. Z. Liu, H. K. Huang, C. C. Wang, Y.H. Wang, C. H. Chang, W. Wu, C. L. Wu and C. S. Chang“A C-Band 5 Watt Internally Matched PHEMT Power Amplifier,” Electronic Devices and Materials Symposia, EDMS2003, pp269-272, National Taiwan Ocean University, Keelung, Taiwan, Nov.21-22, 2003 K. W. Lee, P.W. Sze, M.P. Houng, and Y.H. Wang, ” The Study of Liquid Phase Chemical Enhanced Oxidation of AlGaAs and Its application,” Electronic Devices and Materials Symposia, EDMS2003, pp273-276, National Taiwan Ocean University, Keelung, Taiwan, Nov.21-22, 2003 H. K. Huang, C. S. Wang, Y. H. Wang, C. L. Wu, and C. S. Chang, 2003,” Comparison of Hot-Electron Reliability of AlGaAs with InGaP PHEMTs,” Electronic Devices and Materials Symposia, EDMS2003, pp429-432, National Taiwan Ocean University, Keelung, Taiwan, Nov.21-22, 2003 C.L. Lin, C.I. Liao, Y.H. Wang and K.F. Yarn,“ Direct growth of high-quality InP layers on GaAs substrates by OMVPE,” p61, Optics and Photonics Taiwan, 02, Taipei, Dec.12-13, 2002 C.I. Liao, K.F. Yarn, C.L. Lin and Y.H. Wang, ”Investigation of InGaAs strain layers on misoriented GaAs substrates by metalorganic chemical vapor deposition,” p27, Optics and Photonics Taiwan, 01, Kaoshiung, Dec.13-14, 2001 C.C.Liu, Y.K. Lin, F.L. Jeng, J.Hong, M.P. Houng, and Y.H. Wang "Reliability of laser diode flip-chip on Si substrate using indium solider," p9, Optics and Photonics Taiwan, 01, Kaoshiung, Dec.13-14, 2001 N.F. Wang, M.P. Houng, and Y.H. Wang, 2001 "Fabrication of GaAS MOSFETs with a low temperature liquid phase deposited SiO2 as the gate oxide, "WB4-6, pp211-214, Electronics Devices and Materials Symposia, Taiwan, 2001, Kaoshiung, Dec. 12-13, 2001 C.I. Liao, K.F. Yarn, C.L. Lin and Y.H. Wang, ”Formation of high quality InGaAs metamorphic layers on GaAs substrates by MOCVD,”pp505-506, PB-6, Electronics Devices and Materials Symposia, Taiwan, 2001, Kaoshiung, Dec. 12-13 C.T. Wei, J.H. Chen, S.C. Wong and Y.H. Wang, 1999, ” Investigation of Breakdown mechanisms by combination stresses,”1999 EDMS, Chang Gung university, Tao-Yuan, Taiwan J.H. Chen, S.C. Wong and Y.H. Wang, 1999, "The impact of drain voltage on gate-induced leakage current in MOSFET,” 1999, EDMS, Chang Gung University, Tao-Yuan, Taiwan J.Y. Wu, H.H. Wang, Y.H. Wang and M.P. Houng, 1999, ”GaAs MOSFET fabrication with a low temperature selective grown gate oxide,” EDMS 1999, EDMS, Chang Gung University, Tao-Yuan, Taiwan D.W. Chou, R.F. Lou, H.H. Wang, Y.H. Wang and M.P. Houng, 1999, "Properties of sulfer-passivated GaAs oxide layers grown by liquid phase chemical-enhanced technique,” 1999 EDMS, Chang Gung University, Tao-Yuan, Taiwan D.W. Chou, H.H. Wang, Y.H. Wang and M.P. Houng, "Effect of post annealing on GaAs oxides grown by liquid phase chemical-enhanced technique,”Twelfth International Conference on Ternary and Multinary Compounds, Sep. 27-Oct. 1, 1999, National Tsing Hua University, Hsinchu, Taiwan c. Other Works W.C. Chien, J.J. Huang and Y.H. Wang, “GaN and AlGaN thin films grown by plasman-assisted moleciulae beam epitaxy, ”Journal of Taiwan Vacuum Society vol.17, no.2, pp72-77, Sep. 2004 J.J. Huang and Y.H. Wang, "the application of high power amplifier wiht GeN in high temperature and high frequency,"vol.11, no.3, pp41-46, March, 2004 J.J. Huang, W.C. Chien and Y.H. Wang, “the device of GeN with high temperature and high frequency,” Electronics Spectrum, vol.10, no.2, pp63-70, Dec. 2004 J.J. Huang, W.C. Chien, S.K. Lin, S.L. Lu, M.C. Tsai, Z.Y. Wu, P. W. Sze, M. P. Houng and Y. H. Wang,”High Al content in AlxGa1-xN on GaN buffer/sapphire grown by RFMBE,” Journal of Taiwan Vacuum Society, vol.18, no.3, pp86-90, Dec.5, 2005 S.L. Lu, W.C. Chien, J.J. Huang, S.K. Lin, M.C. Tsai, Z.Y. Wu, P. W. Sze, M. P. Houng and Y. H. Wang, ”High quality GaN films grown on sapphire by RF-MBE without low temperature buffer layers,” Journal of Taiwan Vacuum Society, vol.18, no.3, pp91-95, Dec.5, 2005 P. H. Chiu, C. J. Huang, Y. H. Wang, T. H. Meen, M. C. Shih and W. R. Chen,“Organic Solvent Synthesis of the Gold Nanodumbbell Structure by Electrochemical Approach,” Journal of Taiwan Vacuum Society, Vol.18, No.4,p83, February 2006　　　　　　　　　　　　　　　　　　　 C. Books None D. Presentations (including exhibitions) None E. Other publications None
Projects
A. National Science Council Projects The development and fabrication of key devices MMICs and transmitter system for Ku/Ka band applications 2006 Fabrication of GaN heterostructure field effect transistor as liquid phase deposition oxide gate on Si substrate grown by moleculare beam epitaxy 2005 Fabrication of 2W Ku-band MMICs and application of small transceiver with AlGaAs/InGaAs MOS-PHEMT devices 2005 Fabrication of Ka-band PHEMT devices and MMIC (3/3) 2005 Application of LPCEO on GaAs-based devices (3/3) 2004 Grow GaN and AlGaN MOSHFET on Si substrate with molecular beam epitaxy 2004 Fabrication of Ka-band PHEMT devices and MMIC (2/3) 2004 Research of GaN MOSFET and AlGaN/GaN MOSHFET power devices 2003 Fabrication of Ka-band PHEMT devices and MMIC (1/3) 2003 Application of LPCEO on GaAs-based devices(2/3) 2003 Application of LPCEO on GaAs-based devices(1/3) 2002 Research of Ku-band power and low-noise MMIC with MHEMT,InGaP PHEMT and MHBT 2002 Study of GaAs RF power devices with LPCEO(II)---sub-2:Fabricate the GaAs heterojunction bipolar transistor and metal-oxide-semiconductor FET with select oxide using metal shielding 2001 Fabrication of optoelectric and RF GaN devices(3/3)---sub-4:Study the technology and fabrication of GAN-BASED RF-power devices 2001 Research the model of PHEMT power devices and amplifier 2001 Research of PHEMT MMIC power amplifier 2000 The study and fabrication of GaN-Based RF-power devices 2000 Research the model of PHEMT power devices and amplifier 1999 The study and fabrication of GaAs-Based RF-power devices 1999 B. General Projects The Feasibility Study of Improved the Wavelength Blue-Shift Phenomenon In Nitride-Based Green LED - CHI-MEI OPTOELECTRONIC Polymer Based Field Effect Transistors for Flexible Display - CHI-MEI OPTOELECTRONIC Research, fabrication and design of vertical Probe card Research, fabrication and design of wafer contact Probe card C. Education Improvement Projects Ministry of Education Advisory Office Communications Technology Personnel training Pilot-Project Communications Technology Education Improvement Project
Students
A. Students Yu-Lu Lin (Postdoctoral Fellow )、Pramod K. Singh(Postdoctoral Fellow )、Sarbani Basu(Postdoctoral Fellow ) Wei-Chih Chien(Ph.D.)、Yi-Zhang Li(Ph.D.)、Jen-Aum Hor(Ph.D.)、Yu-Chang Li(Ph.D.)、Pin-Hsiang(Ph.D.)、Feri Adriyanto(Ph.D.)、Tsu-Yi Wu(Ph.D.)、Chih-Ming Lin(Ph.D.)、Chang-Hung Chien(Ph.D.)、Yu-Ann Lai(Ph.D.)、Chih-Chun Hu(Ph.D.)、Hsien-Chang Lin (Ph.D.)、Chia-Yu Wei(Ph.D.)、Chun-Chi Su(Ph.D.)、Fang-Ming Lee(Ph.D.)、Shih-Han Hung(Ph.D.)、Yu-Sheng Lin(Ph.D.)、Pai-Yang Tsai(Ph.D.)、Chih-Wei Huang(Ph.D.) Chang-Chieh Wu(M. S. 99)、Young-Hsing Chang(M. S. 99)、Chueh-Fei Tai(M. S. 99)、Mon-Sen Lin(M. S. 99)、Jiun-Nian Chen(M. S. 99)、Chien-Hung Liu(M. S. 99)、Wen-Wei Chung(M. S. 99)、Yu-Ming Hung(M. S. 99)、Su-Hao Kuo(M. S. 99) Jay-Wen Huang (M. S. 100)、Chih-Kai Yang (M. S. 100)、Chia-Chen Huang(M. S. 100)、Chung-Ming Chen(M. S. 100) B. Honors for Students Pin-Hsiang Chiu, Chien-Jung Huang, Yung-Han Wang, Ting-Hui Min, Ming-Chang Shih, Wen-Jui Chen, “Journal of Vacuum Science award”, Organic Solvent Synthesis of the Gold Nanodumbbell Structure by Electrochemical Approach, Taiwan Vacuum Society (2005) Award of the Foundation of Chen of Jieh-Chen scholarship , Tainan,Taiwan.(NT:1 million)(2000) Award of Excellent Young Engineer, south area of Chinese Engineer Association (1995) Award of Excellent Young Engineer, Chinese Engineer Association (H. H. Chen) (1991) Award of Excellent Young Engineer, Chinese Engineer Association (W. J. Liao) (1994) Award of Excellent Young Engineer, Chinese Engineer Association (Q. H. Gao) (1998) Award of Excellent Young Engineer, Chinese Engineer Association (J. L. Liu) (1999) Supervise college students subject win the research award of NSC (J. L. Liu) (1996) Award of Outstanding Paper, Chinese Science Material Society (1999)
Holding or Attending National Conferences
H. Wang, “D- and E-Mode Al0.2Ga0.8As/In0.15Ga0.85As PHEMTs Fabricated by Highly Selective Wet Etching with High Linearity and Low Noise Characteristics,” 16th Asia-Pacific Microwave Conference (APMC’04), December 15-18, 2004, New Delhi, India (Invited) Y.H. Wang, ” Highly Selective Wet Etching with Citric Buffer Etchant forAl0.2Ga0.8As/In0.15Ga0.85As PHEMTs Applications,” International Conference in Asia (IUMRS-ICA2004), 16-18 November 2004, Hsinchu, Taiwan (invited) Y.H. Wang, “Liquid phase oxidation on GaAs-based materials and the applications,” The seventh International Conference on Solid State and Integrated-circuit Technology (ICSICT), Oct. 18-21, 2004, Beijing, China (Invited) Y.H. Wang, H. Z. Liu, H. K. Huang, C. C. Wang, C. H. Chang, W. Wu, C. L. Wu and C. S. Chang,“L-Band, High Efficiency 25 Watt Power Amplifier Using PHEMT For Base Station System,”The 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, EDMO2003, pp76-82, Nov.17-18, 2003, Orlando, FL, USA, (invited talk) Y.H. Wang,“ Recent Development in GaN HEMTs,” ppC-46,, MBE 2005 Taiwan, May 19-20, HsinChu, Taiwan (invited) Y.H. Wang,“Recent Developments on GaAs-based MISFETs, “2006 International Workshop on Next Generation electronics,South Taiwan University of Technology, April 21-22, 2006 (invited) Y.H. Wang, “Preparation of native oxides on GaAs –based materials and its applications by liquid phase chemical enhanced oxidation,” Electronic Devices and Materials Symposia, EDMS2003, ppI-55-58, National Taiwan Ocean University, Keelung, Taiwan, Nov.21-22, 2003(Invited)
International Teaching and Research Exchange
number of being invited by foreign institutes : 5 number of visiting foreign educational institutes : 10 number of students advised visiting foreign educational institutes : 5 number of students advised study aboard : 0 number of inviting foreign educators to the department :10 number of inviting foreign students to the department : 0 number of directing research projects with foreign educators : 1