洪茂峰 教授

職稱

教授

電話

+886-6-275-7575 ext. 62342

傳真

+886-6-234-5482

電子信箱

mphoung@eembox.ncku.edu.tw

實驗室

雷射實驗室

開授課程

97學年度第一學期

光電元件物理

工程學數(三)

97學年度第二學期

   半導體物理

 

學歷
  • 國立成功大學電機博士(1985)
  • 國立清華大學材料碩士(1980)
  • 國立成功大學物理學士(1974)

經歷
  • 國立成功大學光電系系主任(2007-2008)
  • 國立成功大學特聘教授(2002-)
  • 國科會奈米實驗室兼任組長(2002-2005)
  • 國立成功大學電機系教授(1990-)
  • 國立成功大學教務處學術服務組主任(1996-1997)
  • 國立成功大學電機系副教授(1985-1990) 
  • 美國伊利諾大學客座副教授(1987.8-1988.5)
  • 美國 Belcore 公司(1988.5-1988.9)光電部門訪問科學家
  • 工研院電子研究所副工程師(1980.6-1980.9) 

專長及研究領域
  • 半導體製程技術  
  • 高亮度發光二極體
  • 光電元件及封裝技術 
  • 射頻元件製作

榮譽及獎勵 (至少五年內)
  • 1985-2000年國科會研究成果甲等獎
  • 2007李國鼎科技獎座金質獎章

專利 (至少五年內)
  1. 王永和，洪茂峰，邱瑞杰，“平衡式三倍頻器電路” 發明第二○○七二九七二六號，中華民國專利，民國九十六年八月一日。
  2. 洪茂峰，陳漢珍，張志聖，吳宏偉，楊茹媛，翁敏航，陳慶全， “高頻探針測試裝置及其測試方法”  發明第二○○五三三九三五號， 中華民國專利，民國九十四年十月十六日。

2.      王永和, 廖晉毅, 劉安鴻, 洪茂峰, 林建良, “III-V 族半導體之選擇性蝕刻方法及溶液”, 發明第二二九三七九號, 中華民國專利，民國九十四年三月十一日至一百一十三年二月二十六日止。

  1. 洪茂峰, 王永和, 項嵩仁, “褶層型電容結構與製造方法”, 發明第二二九四四五號, 中華民國專利，民國九十四年三月十一日至一百一十年六月四日止。

4.      洪茂峰, 王永和, 王納富, “在HgCdTe 或其它II-VI 族半導體基板上液相沈積二氧化矽膜的方法”,中華民國專利， 發明第○九五ㄧㄧ○號, 民國八十七年六月十一日。

  1. 洪茂峰, 王永和, 黃建榮, “藉氨水化處理在III-V族半導體基板上液相沉積二氧化矽的方法”, 中華民國專利， 發明第○九六四○八號, 民國八十七年八月一日。
  2. 王永和, 王會恆, 洪茂峰, “低溫液相III-V族半導體氧化絕緣層之製程”, 發明第○九六六二四號, 中華民國專利，民國八十七年八月二十一日。
  3. 王永和，洪茂峰，王會恆，”低溫液相III-V族半導體氧化絕緣層之製程”， United States  Patent, patent number：5,958,519, Date of patent：Sep. 28, 1999。
  4. Mau-Phon Houng, Yeong-Her Wang, Chien-Jung Huang, “Liquid phase deposition method for growing SiO2 film on III-V semiconductor substrate treated with ammonium hydroxide”, United States Patent, patent number： 5,998,304, Date of patent：Dec. 7,1999
  5. Mau-Phon Houng, Yeong-Her Wang, Na-Fu Wang, “Liquid phase deposition method for forming silicon dioxide film on           HgCdTe or other II-VI semiconductor substrate”, United States Patent, patent number：6,004,886, Date of patent：Dec. 21,1999
  6. 洪茂峰，王永和，張偉智，“一種Si 表面處理對摻雜之 SiO2 電特性改善之技術” 發明第一五三二一三號, 中華民國專利，民國九十一年三月一日至一０九年十二月四日止。
  7. 洪茂峰，王永和，葉振松，“金氧半場效電晶體的製作方法”, 發明第一五六五一九號,中華民國專利，民國九 十一年六月一日至一０九年十一月九日止。
  8. 王永和, 王會恆, 洪茂峰, “金氧半場效應電晶體製程”, 發明第一二一一三四號, 中華民國專利，民國八十九年十月一日止。
  9. 王永和 , 洪茂峰, 王會恆, “一種砷化鎵積體電路的元件隔離製程”, 發明第一四五九六八號, 中華民國專利，民 國九十年十一月二十一日至一０九年七月二十七日止。
  10. 王永和 , 洪茂峰, 張耀鈞, “ 以電漿處理改善氧化層電性的方法”, 發明第一六八六二○號, 中華民國專利，民國九十一年十一月二十一日至一０九年十一月二十七日止。
  11. 王永和 , 洪茂峰, 蘇炎坤, 張守進, 吳厚潤, “氮化鎵金氧半場效電晶體之製造方法 “, 發明第一六九六八○號, 中華民國專利，民國九十一年十二月二十一日至一一０年八月八日止。
  12. 洪茂峰, 張振福, 黃文啟, 湯譯增, “表面聲波濾波器及其製造方法”, 發明第一六七○三五號, 中華民國專利，民 國九十一年十一月一日至一一０年十一月二十九日止。
  13. 洪茂峰, 王永和 , 王偉庭, “改善發光二極體之電流分佈”, 發明第一六七○, 中華民國專利。
  14. Mau-Phon Houng, Yeong-Her Wang, Wai-Jyh Chang, “Method of surface treatment on the improvement of electrical properties for doped silicon oxides(SiO2) films”, United States Patent, patent number： US6,689,645 B2, Date of patent：Feb. 10, 2004
  15. 洪茂峰, 王永和, 蔡世鴻, “嵌入式表面聲波濾波器及其製造方法”, 發明第■■■■號, 中華民國專利，民國九十■年■■月■日至■■年■月■日止。

著作 (至少五年內)

A. Refereed Papers

  1. Wen-Jeng Lin, Lih-Shan Chen, Ding-Bing Lin, and Mau-Phon Houng, “Controllable Reverse Double U-Shaped Defected Ground Structure for Bandpass Filter with Improved Out-of-Band Performances,” Microwave and Optical Technology Letters, 2008. (accepted)
  2. P.T. Hsieh, Y.C. Chen, M.S. Lee, K.S. Kao, M.C. Kao, M.P. Houng, “The effects of oxygen concentration on ultraviolet luminescence of ZnO film by sol-gel technology and annealing, “ JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, vol.47, no.1, pp.1-6, 2008. 
  3. Chia-Hung Tsai, Wei-Chin Wang, Feng-Lin Jenq, Chien-Chih Liu, Chen-I Hung, and Mau-Phon Houng, “Surface Modification of ZnO Film by Hydrogen Peroxide Solution,” Journal of Applied Physics. (accepted)
  4. Chun Hsien Huang, Na Fu Wang, Y.Z. Tsai, Chien-Chih Liu, Chen-I. Hung, and Mau-Phon Houng, “The formation of a SiOx interfacial layer on low-k SiOCH materials fabricated in ULSI application, “ Materials Chemistry and Physics, 110(2), pp.299-302, 2008
  5. Chia-Hung Tsai, Mau-Shang Chang, Chien-Chih Liu, Sheng-Yuan Chu, Chen-I. Hung and Mau-Phon Houng, “Enhancement of the Luminance Efficiency for Top-Emitting DB-PPV Polymer Light-Emitting Diodes with Ca/Ag Cathode,” Materials Chemistry and Physics, vol. 111 Issue 1, pp.158-161, 2008.
  6. Lih-Shan Chen, Wen-Jeng Lin, Tsung-Hui Huang , Mau Phon Houng, Shen-Li Fu, “Harmonic suppression of bandpass filters using open-circuited stubs”, Microwave and Optical Technology Letters, 50(4), pp.863-865.
  7. Chun Hsien Huang, Hui Ling Huang, Chen I Hung, Na Fu Wang, Yeong Her Wang, and Mau Phon Houng, “Bond Structure in Porous SiOCH Low-k Film Fabricated by Ultraviolet Irradiation,” Japanese Journal of Applied Physics, 2008, vol. 47 (3), pp. 1532-1535.
  8. Chien-Chun Wang, Hung-Chi Lu, Chien-Chih Liu, Feng-Lin Jenq, Yeong-Her Wang, and Mau-Phon Houng, “Improved Extraction Efficiency of Light-Emitting Diodes by Modifying Surface Roughness With Anodic Aluminum Oxide Film,” Photonics Technology Letters, IEEE, Vol. 20,  Issue 6,   pp. 428 - 430, March 15, 2008. 
  9. Chien-Chun Wang, Feng-Lin Jenq, Chien-Chih Liu, Chen-I Hung, Yeong-Her Wang, and Mau-Phon Houng, “Selective high resistivity region formation by Ni catalyst on GaN light-emitting diodes,” Semiconductor Science and Technology, 23 (2), p.025012, Feb 2008.
  10. Chien-Chun Wang, Han Ku, Kwok-Keung Chong, Chen-I Hung, Yeong-Her Wang, Mau-Phon Houng, “Enhancement of the light output performance for GaN-based light-emitting diodes by bottom pillar structure,” APPLIED PHYSICS LETTERS 91, 121109,  Sept 2007.
  11. Ming-Liang Hsieh, Tsung-Hui Huang, Lih-Shan Chen, Chian-Hao Sun, Shuming Wang, Mau-Phon Houng, Shen-Li Fu, “A miniaturized bandpass filter fabricated on high dielectric constant ceramic substrates,” Microwave and Optical Technology Letters ,Vol.49, Issue 9, pp. 2087-2090, Sept 2007.
  12. Ming-Liang Hsieh, Tsung-Hui Huang, Lih-Shan Chen, Chian-Hao Sun, Shuming Wang, Mau-Phon Houng, Shen-Li Fu, “Multilayer cross-coupled resonator bandpass filters fabricated on low temperature cofired ceramic substrates, “Microwave and Optical Technology Letters ,Vol.49, Issue 8, pp.1977-1979, Aug. 2007.
  13. Tsung-Hui Huang, Chin-Sheng Chang, Han-Jan Chen, Lih-Shan Chen, Jui-Hong Horng, Yeong-Her Wang, Mau-Phon Houng, “Simple method for a K-band SIW filter with dual-mode quasi-elliptic function response, “Microwave and Optical Technology Letters,Vol. 49, Issue 6, pp. 1246-1249, June 2007.
  14. Tsung-Hui Huang, Han-Jan Chen, Tung-Ming Chen, Lih-Shan Chen, Chien-Chih Liu, Chen-I Hung Yeong-Her Wang, Mau-Phon Houng,” A simple design cylindrical dielectric resonator antenna with wide aperture-coupled for broadband applications,” Microwave and Optical Technology Letters, Vol. 49, Issue 5, pp.1064-1067, May 2007.
  15. T.H.Huang,H.J.Chen,C.S.Chang,L.S.Chen,J.H.Horng,Y.H.Wang and M.P.Houng, “Minimized closed-loop high-selectivity dual-band filters using trisection stepped-impedance resonators,” Microwave and Optical Technology Letters, Vol. 49, pp.219-221, Jan. 2007
  16. Han-Jan Chen, Tsung-Hui Huang, Chin-Sheng Chang, Lih-Shan Chen, Jui-Hong Horng, Yeong-Her Wang, Mau-Phon Houng, “Package-induced cross-coupling effect on amplifier harmonic suppression, “Microwave and Optical Technology Letters, Vol. 49, pp.332-336, Feb. 2007
  17. Kwok-Keung Chong, Fenq-Lin Jenq, and Mau-Phon Houng, “Role of Annealing in Constant Period of Voltage Stress on the Burn-in Effect Suppression of InGaP/GaAs Heterojunction Bipolar Transistors, “Japanese Journal of Applied Physics, Vol. 46, pp. 974-976, 2007.
  18. Han-Jan Chen, Tsung-Hui Huang, Lih-Shan Chen, Jui-Hong Horng, Mau-Phou Houng, “New design concept of dual-mode bandpass filter by using nonorthogonal input and output ports for wireless application”, Microwave and Optical Technology Letters, 2006
  19.  Jui-Chieh Chiu; Jih-Ming Lin; Mau-Phon Houng; Yeong-Her Wang, 2006. “A PCB-compatible 3-dB coupler using microstrip-to-CPW via-hole transitions”, IEEE, Microwave and Wireless Components Letters, Vol.16, pp. 369-371
  20.  Tsung-Hui Huang; Han-Jan Chen; Chin-Sheng Chang; Lih-Shan Chen; Yeong-Her Wang; Mau-Phon Houng, 2006. “A novel compact ring dual-mode filter with adjustable second-passband for dual-band applications”, IEEE, Microwave and Wireless Components Letters, Vol.16, pp. 360-362
  21. Hong-Zhi Liu; Che-Hung Lin; Chen-Kuo Chu; Hou-Kuei Huang; Mau-Phon Houng; Ching-Hsueh Chang; Chang-Luen Wu; Chian-Sern Chang; Yeong-Her Wang, 2006. “A single-supply Ku-band 1-W power amplifier MMIC with compact self-bias PHEMTs”, IEEE, Microwave and Wireless Components Letters, Vol.16, pp. 330-332
  22. Han-Jan Chen; Tsung-Hui Huang; Chin-Sheng Chang; Lih-Shan Chen; Na-Fu Wang; Yeong-Her Wang; Mau-Phon Houng, 2006. “A novel cross-shape DGS applied to design ultra-wide stopband low-pass filters”, IEEE, Microwave and Wireless Components Letters, Vol.16, pp. 252-254
  23. Jui-Chieh Chiu; Chieh-Pin Chang; Mau-Phon Houng; Yeong-Her Wang, 2006. “A 12-36GHz PHEMT MMIC balanced frequency tripler”, IEEE, Microwave and Wireless Components Letters, Vol.16, pp. 19-21
  24.  Kuan-Wei Lee; Po-Wen Sze; Yu-Ju Lin; Nan-Ying Yang; Mau-Phon Houng; Yeong-Her Wang, 2005. “InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid-phase-oxidized InGaP as gate dielectric”, IEEE Electron Device Letters, Vol. 26, pp.864-866
  25.  Hong-Zhi Liu; Hou-Kuei Huang; Chih-Cheng Wang; Ray-Jay Chiu; Che-Hung Lin; Chen-Kuo Chu; Mau-Phon Houng; Yeong-Her Wang, 2005. “Simple, low-cost, subsystem fabrication”, IEEE Circuit and Devices Magazine. Vol. 21, pp. 12-17.
  26. Chen-Kuo Chu; Hou-Kuei Huang; Hong-Zhi Liu; Chiu, R.-J.; Che-Hung Lin; Chih-Cheng Wang; Mau-Phon Houng; Yeong-Her Wang; Chuan-Chien Hsu; Wang Wu; Chang-Luen Wu; Chian-Sern Chang, 2005. “A fully matched high linearity 2-W PHEMT MMIC power amplifier for 3.5 GHz applications”, IEEE, Microwave and Wireless Components Letters, Vol.15, pp. 667-669
  27. Min-Hung Weng; Ru-Yung Yuan; Tsung-Hui Huang; Han-Jan Chen; Wu-Nan Chen; Mau-Phon Houng, 2005.  “Spurious suppression of a microstrip filter using three types of rectangular PBG loops”, IEEE Trans. Ultrason., Ferroelect., Freq. Contr., vol. 52, pp. 487-490.
  28. H.J. Chen, T.H. Huang, L.S. Chen, J.H. Horng, and M.P. Houng, “New design concept dual-mode bandpass filter by using non-orthogonal input and output ports for wireless application”, Microwave and Optical Technology Letters, 2005. (accepted)
  29. K.F. Yarn, C.I. Liao, Y.H. Wang and M.P. Houng, 2005, “Effects of gate sidewall recess on Al0.2Ga0.8As/In0.15Ga0.85As PHEMTs by citric-based selective etchant,” Journal of Materials Science-Materials in Electronics, Vol.16, pp.529-532.
  30. H.Z. Liu, H.K. Huang, C.C Wang, R.J. Chiu, C.H. Lin, C.K. Chu, M.P. Houng, Y.H. Wang C.H. Chang, C.L. Wu, and C.S. Chang, 2005, “Simple, low-cost, subsystem fabrication,” IEEE Circuit & Devices, Vol. 21, No.4, pp.12-17.
  31. K.F. Yarn, C.I. Liao, Y.H. Wang, M.P. Houng, and M.C. Chure, 2005, “Gate-recessed delta-doping enhancement-mode Al0.2Ga0.8As/In0.15Ga0.85AsPHEMTs using a new citric buffer etchant,” Materials Science in Semiconductor Processing, Vol. 8, No.4, pp.550-554
  32. M.H. Weng, R.Y. Yuan, T.H. Huang, H.J. Chen, W.N Chen, and M.P. Houng, 2005, “Spurious suppression of a microstrip bandpass filter using three types of rectangular PBG loops,” IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control, Vol. 52, No.3, pp.487-490
  33. H.C. Chen, M.H. Weng, J.H. Horng, M.P. Houng, and Y.H. Wang, 2005, “Effect of bismuth addition on sintering behavior and microwave dielectric properties of zinc titanate ceramics,” Journal of Electronic Materials, Vol. 34, No.1, pp.119-124.      M.L. Hsieh, L.S. Chen, S.M. Wang, C.H. Sun, M.H. Weng, M.P. Houng and S.L. Fu, 2005, “Low-Temperature Sintering of Microwave Dielectrics (Zn,Mg)Ti03,” Japanese Journal of Applied Physics, Vol. 44, No.7A.
  34. H.K. Huang, C.S. Wang, M.P. Houng and Y.H. Wang, 2005, “Hot Electron Effects on AlGaAs/InGaAs/ GaAs PHEMTs under Accelerated DC Stresses,” Microelectronic Reliability, (revised).
  35. H.Z. Liu, H.K. Huang, C.C. Wang, R.J. Chiu, C.K. Chu, C.H. Lin, M.P. Houng, Y.H. Wang, C.H. Chang, C.L. Wu and C.S. Chang, 2005,“A 38dBm Power Amplifier Using AlGaAs/InGaAs/GaAs PHEMT For S-Band Applications, Microwave and Optical Technology Letters, vol.44, pp.311-313.
  36. C.K. Chu, H.K. Huang, H.Z. Liu, R.J. Chiu, C.H. Lin, C.C. Wang, M.P. Houng, Y.H. Wang, C.C. Hus, W. Wu, C.L. Wu, and C.S. Chang, 2005, “A Fully Matched High Linearity 2W PHEMT MMIC Power Amplifier for 3.5 GHz Applications,” IEEE Microwave and Wireless Components Letters.
  37. H.Z. Liu, H.K. Huang, C.C. Wang, R.J. Chiu, C.K. Chu, CH.H. Lin, M.P. Huang, Y.H. Wang, C.H. Chang, C.L. Wu and C.S. Chang, 2005, “A Low Distortion 25 W Power Amplifier with a 50 mm PHEMT for PHS Base Station Applications,” IEEE Circuit and Devices Magazine, (accepted).
  38. C-I Liao, M-P Houng and Y-H Wang, 2004, “Highly selective etching of GaAs on Al0.2Ga0.8As using citric acid/H202/H2O etching system”, Electrochemical and Solid-State Letters, Vol. 7(11), C129-C132
  39. N.F. Wang, I.T. Tang, C.I. Hung and M.P. Houng, 2004, “Investigation of novel microwave surface-acoustic-wave filter on different piezoelectric substrates, Japanese Journal of Applied Physics, Vol. 43, No. 12, pp. 8139-8145
  40. K.W. Lee, Y.H. Wang and M.P. Houng, 2004, “Liquid phase chemical enhanced oxidation on AlGaAs and its application”, Japanese Journal of Applied Physics, Vol. 43, No.7A, pp. 4087-4091
  41. C.C. Wang, H.K. Huang, Y.H. Wang, M.P. Houng, C.L. Wu and C.S. Chang, 2004,“Fabrication of GaAs Schottky diode by liquid phase chemical enhanced oxidation”, Solid-State Electronics, Vol. 48, pp. 1683-1686
  42. L.S. Chen, T.H. Huang, H.J. Chen, S.F. Su and M.P. Houng, 2004,“Multilayer stepped-impedance resonator band-pass filter implementing using low temperature cofired ceramic structure”, Japanese Journal of Applied Physics, Vol. 43, No. 10A, pp. L1290-L1292
  43. M-H Weng, R-Y Yang, C-Y Hung, H-W Wu and M-P Houng, 2004,“A dual-mode bandpass filterwith a wider stopband”, Microwave and Optical Technology Letters, Vol. 43, No.10, pp.
  44. H-C Chen, M-H Weng, J-H Horng, M-P Houng and Y-H Wang, 2004, “Effect of bismuth addition on sintering behavior and microwave dielectric properties of zinc titanate ceramics”, Journal of electronic materials, Vol. No. , pp.
  45. C.I. Liao, P.W. Sze, M.P. Houng and Y.H. Wang, 2004, “Very high selective etching of GaAs/Al0.2Ga0.8As for gate recess process to pseudomprphic high electron mobility transistors(PHEMT) applications using citric buffer solution”, Japanese Journal of Applied Physics, Vol. 43, No. 6B, pp. l800-L802
  46. L.S. Chen, M.P. Houng, 2004, “ A Compact hairpin bandpass filter on high permittivity dielectrics using tape casting technique”, Microwave and Optical Technology Letters, Vol. 43, No.2, pp.
  47. M.H. Weng, R.Y. Yuan, T.H. Huang, H.J. Chen, M.P. Houng, 2005, “ Spurious suppression of a  microstripe bandpass filter using three types of rectangular PBG loops”IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, Vol.    , pp. 
  48. M.P. Houng , 2004,"Wide-band and Low-loss Triangular Patch Dual-Mode Bandpass Filter Using Quasi-Fork Recessed Tapped I/O," Microwave and Optical Technology Letters, Vol. 43, No.2, pp.
  49. M.H. Weng, and M.P. Houng , 2004, “Dual-Mode Ring Bandpass Filter Using Defected Ground Structure with a Wider Stopband”, IEICE Transactions, Vol.  , pp.
  50. M.H. Weng, and M.P. Houng , 2004, “High Spurious Suppression of the Dual-Mode Patch Bandpass Filter Using Defected Ground Structure”, IEICE Transactions, Vol.  , pp.
  51. C.N. Chen, Y.H. Wang, M.P. Houng and J.C. Chiang, 2004, “Dresselhaus-like spin splitting in (hkl)  InAs/GaSb superlattices”, Semicond. Sci. Technol. Vol. 19, pp. 626-629
  52. W-N Chen, M-H Weng, I-Tseng Tang, C-Y Hung and Mau-Phon Houng, , 2004,  “Notch Filters with Novel Microstrip Triangle-Type Resonators”, IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, Vol. 51, No. 8, pp. 1018-1021
  53. H.C. Chen, M.H. Weng, J.H. Horng, M.P. Houng and Y.H. Wang, 2004, “Effect of Ni substitution for Cu on the dielectric properties Y2Ba(Cu1-xNix)O5 solid solutions”, Physica, vol. 349/1-4, pp.  304- 309
  54. S.H. Tsai, J.H. Horng, M.P. Houng and Y.H. Wang, 2004, “Direct bonding of recessed-structure SAW filter on Si substrate”, IEEE Trans. Ultrason., Ferroelect, Freq. Contr., Vol. 51, No. 7, pp. 912-915
  55. R-Y Yang, Min-Hung Weng, C-Y Hung, Han-Jan Chen and Mau-Phon Houng, 2004, “Novel Compact Microstrip Interdigital Bandstop Filters”, IEEE Trans. Ultrason., Ferroelect, Freq. Contr., Vol. 51, No. 8, pp. 1022-1025
  56. C-C Liu, Y-H Chen, M-P Houng, Y-H Wang, Y-K Su, 2004, “Improved light-output power of GaN LEDs by selective region activation”, IEEE Photonics Technology Letters, Vol. 16, No. 6, pp. 1444-1446
  57. H.C. Chen, M.P. Houng, 2004, “Microstructures and Microwave Dielectric Properties of (Mg[1-x]Ba[x])TiO[3] Ceramics”, Jpn. J. Appl. Phys., Vol. 43, No. 5A, pp. 2564-2567
  58. K.K. Chong, H.C. Chen, M.P. Houng and Y.H. Wang, 2004, “Suppression of the Burn-In Effect in InGaP/GaAs Heterojunction Bipolar Transistors by Constant Period of Voltage Stress”, J. Appl. Phys., Vol. 95, No. 4, pp. 2079-2083
  59. R.Y. Yang, M.H. Weng, H.W. Wu and M. P. Houng, 2004, “Novel bandpass filter using tapered PBG cells”, Microwave and Optical Technology Letters, April 5, 2004, Vol. 41, No.1, pp.66-68
  60. I-Tseng Tang, Han-Jan Chen, Mau-Phon Houng, 2004, “Applications of piezoelectric ZnO film deposited on diamond like carbon coated onto Si substrate under fabricated diamond SAW filter” , Journal of Crystal Growth, Vol. 262, Issues 1-4, pp.461-466
  61. C. C. Liu, and M. P. Houng, 2004,”TiN Enhancement of Output Performance for LEDs under High Current Injection”, Jpn. J. Appl. Phys., Vol. 43, part 1, No. 2, pp. 594-597
  62. C. C. Liu, Y. K. Lin, M. P. Houng and Y. H. Wang, 2003, “The microstructure investigation of flip -chip laser diode bonding on silicon substrate by using indium-gold solder”, IEEE Trans. Comp. and Packag., Technol., Vol. 26, No. 3, pp. 635-641
  63. S.H. Tsai, N.F. Wang, M.P. Houng and Y.H. Wang, 2003, “Proton-Exchanged wet etching of recessed-structure SAW filter”, IEEE Trans. Ultrason., Ferroelect, Freq. Contr., Vol. 50, No. 9, pp.1219-1222
  64. H. C. Chen, B. H. Tseng, M. P. Houng, Y. H. Wang., 2003, “Titanium nitride diffusion barrier for copper metallization on gallium arsenide”, Thin Solid Film, Vol. 445 , No. 1, pp. 112-117
  65. S.H. Tsai, J.S. Hung, N.F. Wang, J.H. Horng, M.P. Houng, Y.H. Wang, 2003, “Oxide degradation mechanism in stacked-gate flash memory using the cell array stress test”, Semicond. Sci. Technol. Vol.18, pp. 857-863
  66. I-Tseng Tang, Han-Jan Chen, Mau-Phon Houng, Y-H Wang, 2003, “A novel integrable surface acoustic wave notch filter”, Solid- State Electronics, Vol. 47 , pp. 2063-2066 
  67. H.R. Wu, K.W. Lee, T.B. Nian, D.W. Chou, J.J. Huang Wu, Y.H. Wang, M.P. Houng et al, 2003,“Liquid phase deposited SiO2 on GaN”, Materials Chemistry and Physics, Vol. 80, pp. 329-333
  68. D-W Chou, H-H Wang, Y-H Wang and M-P Houng, 2003, “ Electrical properties of GaAs metal -oxide semiconductor structures with the oxide layer grown by liquid phase chemical-enhanced  method”, Materials Chemistry and Physics, Vol. 78, pp. 772-777
  69. I.T. Tang, Y.C. Wang, W.C. Hwang, C.C. Hwang, N.C. Wu, M.P. Houng and Y.H. Wang, ,“ Investigation of piezoelectric ZnO film deposited on diamond like carbon coated onto Si  substrate under  different sputtering conditions”, Journal of Crystal Growth, Vol. 252, No.1-3, pp.   190-198, 2003
  70. C-J Huang, Z-S Ya, J-H Horng, M-P Houng and Y-H Wang, 2002, “GaAs metal-oxide-semiconductor field effect transitors fabricated with low-temperature liquid-phase-deposited SiO2”, Jpn. J. Appl. Phys., Vol. 41, part 1, No. 9, pp. 5561-5562
  71. J-C Liu, M-P Houng and Y-H Wang, 2002, “Titanium nitride as spreading layer for AlGaInP visible  LEDs”, IEEE Photonics Technology Letters, Vol. 14, No. 12, pp. 1665-1667
  72. D-W Chou, K-W Lee, J-J Huang, H-R Wu, Y-H Wang, M-P Houng, S-J Chang and Y-K Su, 2002,“ AlGaN/GaN metal oxide semiconductor heterostructure field-effect transistor based on a liquid phase  deposited oxide”, Jpn. J. Appl. Phys., Vol. 41, part 2, No. 7A, pp. L748-L750
  73. K.W. Lee, D.W. Chou, J.J. Huang, H.R. Wu, Y.H. Wang and M.P. Houng, 2002, “GaN MOSFET with liquid phase deposited oxide”, Electron Lett., Vol. 38, No.15, pp. 829-830
  74. J-Y Wu, H-H Wang, P-W Sze, Y-H Wang and M-P Houng, 2002, “A planarized shallow-trench-isolation for GaAs devices fabrication using liquid phase chemical enhanced oxidation process”, IEEE Electron Device Letters, Vol. 23, No. 5, pp. 237-239
  75. C-N Chen, Y-H Wang, M-P Houng and J-C Chiang, 2002, “k.•p finite difference method: the optimum step length in the differential calculation”, Physics Letters A, Vol. 295, pp. 226-228
  76. C-N Chen, Y-H Wang, M-P Houng and J-C Chiang, 2002, “Bond orbital model with Microscopic  interface effects”, Jpn. J. Appl. Phys., Vol. 41, part 1, No. 1, pp. 36-41
  77. C-N Chen, Y-H Wang, M-P Houng and J-C Chiang, 2002, “Orientation dependence of interface inversion asymmetry effect on InGaAs/InP quantum wells”, phys. stat. sol.(b), Vol. 231, No.2, pp.423-436
  78. D-W Chou, R-F Lou, H-H Wang, Y-H Wang and M-P Houng, 2002,”Properties of the GaAs oxide layer grown by the liquid-phase chemical-enhanced technique on the S-passivated GaAs surface”, J. Electronic Materials, Vol. 31, No. 1, pp. 71-75
  79. M-P Houng, Y-H Wang, J-H Horng and S-J Hsiang, 2002, “High Capacitance Density in a Ta2O5 Folded Capacitor Chip”, Jpn. J. Appl. Phys., Vol. 41, part 1, No. 3A, pp. 1311-1314
  80. I-Tseng Tang, Jui-Hong Horng, Mau-Phon Houng and Yeong-Her Wang, 2002, “A novel microwave microstrip SAW filter with GHz-band low-loss wide bandwidth for spread spectrum communication system”, Jpn. J. Appl. Phys., Vol. 41, part 1, No. 5A, pp. 2974-2977
  81. M.P. Houng, Y.H. Wang, K.K. Chong, C.H. Chu, K.C. Feng, C.I. Hung, and W.L. Li, 2002, “Self-consistent simulation on the modal gain of graded-index separate-confinement-heterostructure quantum-well lasers”, Optical and Quantum Electronics, Vol. 34, No. 10, pp. 975-985
  82. J-Y Wu, P-W Sze, Y-H Wang and M-P Houng, 2001, “Temperature effect on gate leakage currents in gate dielectric films of GaAs MOSFET”, Solid-State Electronics, Vol. 45, pp. 1999-2003
  83. W.J. Chang, M.P. Houng and Y.H. Wang, 2001,”Characterization on the cruuent-voltage curves of  ultrathin silicon dioxides incorporated with fluorine and/or nitrogen”, Semicond. Sci. Technol., Vol.16, pp. 961-965
  84. W.J Chang, M.P. Houng and Y.H. Wang, 2001, “Electrical properties and modeling of ultrathin impurity-doped silicon dioxides”, J. Appl. Phys., Vol. 90, No.10 , pp 5171-5179.
  85. M.P. Houng, Y.H. Wang, J.H. Horng and R.C. Huang, 2001, “Effect of annealing on  Tantalum Pentoxide films in N2 and  N2O gas environments”, Jpn. J. Appl. Phys., Vol. 40, No. 8, pp. 5079-5084
  86. W.J. Chang, M.P. Houng and Y.H. Wang, 2001, “Simulation of stress-induced leakage current in  silicon dioxides: A modified trap-assisted tunneling model considering Gaussian-distributed traps and electron energy loss”, J. Appl. Phys., Vol. 89, No. 11, pp. 6285- 6293
  87. W.J. Chang, M.P. Houng and Y.H. Wang, 2001, “Trap concentration dependency on the electrical  properties of annealed ultrathin fluorinated silicon oxides”, Jpn. J. Appl. Phys, Vol. 40, Part 1, No. 3A, pp. 1-6
  88. J.Y. Wu, H.H. Wang, Y.H. Wang and M.P. Houng, 2001,  “Fabrication of depletion-mode GaAs MOSFET with a selective  oxidation process by using metal as the mask”, IEEE Electron. Dev. Lett., Vol. 22, No. 1, pp. 2-4
  89. J.Y. Wu, H.H. Wang, Y.H. Wang and M.P. Houng, 2001,  “ GaAs MOSFET fabrication with a selective liquid phase oxidized gate”, IEEE Trans. Electron Devices, Vol. ED-48, pp. 634-637
  90. H.H. Wang, D.W. Chou, J.Y. Wu, W.H. Wang and M.P. Houng, 2000, “Surface oxidation kinetics of GaAs oxide growth by liquid phase chemical-enhanced technique”, Jpn. J. Appl. Phys., Vol.39, Part 1, No.7B, pp. 4477-4480
  91. M.P. Houng, Y.H. Wang, C.J. Huang, S.P. Huang and  J.H. Horng, 2000, “Quality optimization of liquid phase deposition SiO2 films on gallium arsenide”, Solid State Electronics, Vol. 44, pp. 1917-1923
  92. M.P. Houng, Y.H. Wang, K.K. Chong, C.S. Chu, and C.I. Hung, 2000, “Heat generation  approximation in modulation-doped field-effect transistors by the energy relaxation between carriers and phonons”, J. Appl. Phys., Vol.88, No.5. pp. 2553-2559
  93. W.J. Chang, M.P. Houng and Y.H. Wang, 2000, “Effect of surface treatments on the electrical  properties of fluorinated silicon oxides”, Journal of the Electrochemical Society, Vol.147(9), pp. 3467-3471
  94. H.H. Wang, D.W. Chou, J.Y. Wu, Y.H. Wang and M.P. Houng, 2000, “Effect of crystal orientation and doping on the activation energy for GaAs oxide grown by liquid phase method”, J. Appl. Phys., Vol.87, No. 5, pp. 2629-2633
  95. K.K. Chong, M.P. Houng, Y.H. Wang, C.H. Chu and C.I. Hung, 2000, “The dark current caused by field-induced mixing effect on Bound-to-Continuum quantum-well infrared photo detectors”, Journal of Physics D: Applied Physics, Vol. 33, pp. 162-169
  96. C.J. Huang, M.P. Houng, Y.H. Wang, and H.H. Wang, 1999, “Effect of a chemical modification on growth silicon dioxide films on gallium arsenide prepared by the liquid phase deposition method”, J. Appl. Phys., Vol. 86, No. 12, pp.7151-7155
  97. H. H. Wang, J.Y. Wu, Y. H. Wang and M. P. Houng, 1999, “Effect of PH values on the kinetics of liquid-phase chemical-enhanced oxidation of GaAs”, J. Electrochem. Soc.,Vol. 146(6),   pp.2328-2332
  98. N. F. Wang, M. P. Houng and Y. H. Wang, 1999, “CO2 laser annealing on the fluorinated silicon oxide films”, Jpn. J. Appl. Phys., Vol. 38 , part 1, No. 9A, pp. 5227-5231 .
  99. W. J. Chang, M. P. Houng and Y. H. Wang, 1999, “Fourier Transform Infrared (FTIR)  Characterization on Moisture Absorption in SiOF Films”, Jpn. J. Appl. Phys., Vol. 38, part 1, No.8, pp.4642-4647
  100. N. F. Wang, M. P. Houng and Y. H. Wang, 1999, “Investigation of low-temperature deposition   of silicon dioxide on Indium Phosphide by liquid phase deposition”, Japanese Journal of  Applied Physics, Vol. 38, No. 10. Pp.6071-6072
  101. M. P. Houng, Y. H. Wang and W. J. Wang, 1999, “Current transport mechanism in trapped oxides: A generalized trap-assisted tunneling model”, Journal of Applied Physics, Vol.86, No.3, pp. 1488-1491.
  102. M. P. Houng, Y. H. Wang, N. F. Wang, W. J. Chang and C. I. Hung, 1999,“Effect of fluorine on    metal-insulator-silicon solar cell performance with a low-temperature deposited SiO2 layer”,      Materials Chemistry and Physics, Vol.59, pp.36-41.
  103. H. H. Wang, D. W. Chou, Y. H. Wang and M. P. Houng, 1999, “Properties of GaAs oxides  prepared by liquid phase chemical-enhanced technique”, Physica Scripta, Vol.T79, pp.239-242.
  104. N. F. Wang, W. J. Chang, M. P. Houng, Y. H. Wang and C. J. Huang, Jan/Feb 1999, “Deposition of     high quality silicon dioxide on Hg1-xCdxTe by low-temperature liquid phase deposition method”, J.    Vac. Sci. Technol. A, Vol.17, No.1, pp.102-107.
  105. J. Y. Wu, H. H. Wang, Y. H. Wang and M. P. Houng, January 1999, “A GaAs MOSFET with a    Liquid Phase Oxidized Gate”, IEEE Electron Device Letters, Vol.20, No.1, pp.18-20.
  106. T. K. Chiang, Y. H. Wang, and M. P. Houng, 1999, “Modeling of threshold voltage and subthreshold  swing of short-channel SOI MESFET’s”, Solid-State Electronics, Vol.43, pp.123-129.
  107. W. J. Chang, N. F. Wang, C. J. Huang, M. P. Houng, and Y. H. Wang, 1998, “The properties of  silicon dioxide grown by liquid phase deposition (LPD) method and its application in MIS solar cells”,  Chinese Journal of Materials Science, Vol.30, No.3, pp.165-177.
  108. M. H. Liu, Y. H. Wang, and M. P. Houng, 1998, “Effects of inelastic scattering on resonant interband  tunneling in GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures”,  Microelectronic Engineering, Vol.43-44, pp.383-393.
  109. S. C. Wong, S. Y. Hsu, Y. H. Wang, M. P. Houng and S. K. Cho, July 1998, “A DC model for asymmetric Trapezoidal gate MOSFET’s in strong inversion”, IEEE Trans. on Electron Devices, Vol.45, No.7, pp.1459-1467.
  110. C. J. Huang, M. P. Houng, Y. H. Wang, and N. F. Wang, 1998, “Improved formation of    silicon dioxide films in liquid phase deposition”, J. Vac. Sci. Technol. A, Vol.16(4), pp.2646- 2652. 
  111. S. C. Wong, S. Y. Hsu, Y. H. Wang, M. P. Houng, and S. K. Cho, 1998, “A DC model for   symmetric trapezoidal gate MOSFET’s in strong inversion”, IEEE Trans. Electron Devices, Vol. 45, No. 7, pp. 1459-1467.
  112. M.H. Liu, Y.H. Wang, and M.P. Houng, 1998, “Effect of inelastic scattering on interband  tunneling in GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures”, IEEE  Trans. Electron Devices, Vol.45, No.6, pp.1213-1218.
  113. C. J. Huang, M. P. Houng, Y. H. Wang, and W. J. Chang, 1998, “Effect of flourine   concentration on the MIS solar cell output performance by LPD”, Jpn. J. Appl. Phys.,     Vol.37, pp.L158-160.
  114. H. H. Wang, C. J. Huang, Y. H. Wang, and M. P. Houng, 1998, “Liquid phase chemical-  enhanced oxidation for GaAs operated near room temperature”, Jpn. J. Appl. Phys., Vol.37, pp.L67- 70.
  115. P. W. Sze, N. F. Wang, M. P. Houng, Y. H. Wang, 1997, “Effects of substrate preheating for the   growth of ZnxCd1-xTe (100) GaAs by MOCVD”, J. Crystal Growth, Vol.180, pp.177- 184.
  116. C. H. Chu, C. I. Hung, Y. H. Wang, and M. P. Houng, 1997, “ Influence of quantum capture and tunneling mechanisms on the dark current of bound-to-continumn quantum-well infrared  photodetectors”, IEEE Photonic Technology Letters, Vol.9, No.9, pp.1262-1264.
  117. M. P. Houng, Y. H. Wang, N. F. Wang, and W. J. Chang, 1997, “Near room-temperature     growth of the SiO2 films for p-HgCdTe passivation by liquid phase deposition” Jpn. J. Appl. Phys.,     Vol.36, No.6, pp.L696-698.
  118. M. P. Houng, Y. H. Wang, C. J. Huang, and W. J. Chang, 1997, “An extremely low   temperature formation of silicon dioxide on Gallium Arsenide”, J. Appl. Phys., Vol.82(11), pp.5788 -5792.
  119. M. H. Liu, Y. H. Wang, and M. P. Houng, 1997, “Effect of doping level on the characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures”, Phys. Scripta., Vol.T69,    pp.202-205.
  120. H. H. Chen, Y. H. Wang, and M. P. Houng, March 1996, “Near 10 μm Intervalence   Subband Optical Transitions in p-type In0.49Ga0.51 P-GaAs Quantum Well Structures ”, IEEE   Journal of Quantum Electronics, Vol.32, No.3, pp.471-477.
  121. P. W. Sze, N. F. Wang, M. P. Houng, Y. H. Wang, Y. T. Cherng, and C. H. Wang, May 1996,“Characteristics of ZnCdTe grown on (100) GaAs substrate by MOCVD”, Journal of Crystal Growth,    Vol.169, pp.27-32.
  122. H. Liu, Y. H. Wang, M. P. Houng, J. F. Cheng and A. Y. Cho, February 1996, “The Low-  Temperature Characteristics of CaSb/AlSb/InAs/GaSb/AlSb/InAs Broken-gap Interband Tunneling  Structures”, Jpn. J. Appl. Phy. , Vol.35, pp.1178-1183.
  123. C. Wei, Y. H. Wang, and M. P. Houng, December 1995, “Investigation of GaAs    homojunction bipolar transistor with delta doping emitter structure”, IEE Proc.-Circuits Devices Syst.,   Vol.142, No.6.
  124. P. Houng, Y. H. Wang, K. K. Chong, S. S. Liu, and J. S. Hsu, May 1995, “The effect of    biaxial strain on the optical properties of quantum well structures”, Material Chemistry and Physics,    pp.195-200.
  125. H. Liu, Y. H. Wang, and M. P. Houng, March 1994, “The effect of the InAs layer    thickness on the peak current density and subband properties of the    GaSb/InAs/GaSb/AlSb/InAs structures”, Journal of Applied Physics, Vol.75, No.5, pp.2699- 2705.
  126. H. C. Wei, Y. H. Wang, and M. P. Houng, 1994, “Electrical properties of a heterojunction    bipolar transistor structure with a resistive gate”, Solid-State Electronics, Vol.37, No.9,     pp.1595-1598.
  127. H. C. Wei, Y. H. Wang, and M. P. Houng, 1994, “N-shape negative differential resistance in a  transistor structure with a resistive gate”, IEEE Trans. Electron Devices, Vol.41, pp.1327-1333.
  128. Y. H. Wang, M. H. Liu, M. P. Houng, J. F. Chen, and A. Y. Cho, 1994, “Investigation of    Negative Differential Resistance Phenomena in GaSb/AlSb/InAs/GaSb/AlSb/InAs   Structures”, IEEE Trans. Electron Devices, Vol.41, pp.1734-1741.   
  129. M. P. Houng, Y. H. Wang, H. H. Chen, and Y. C. Chang, 1993, “InAs/GaSb superlattice structures for normal incidence intersubband and infrared photodetectors”, Superlattices and  Microstructures, Vol.13, pp.181-184.
  130. Y. H. Wang, M. P. Houng, C. S. Chu, and H. H. Chen, 1994, ”Self-consistent simulation on  modulation doped field effect transistor”, Solid-State Electronics, Vol.37, No.2, pp.237-241.
  131. M. P. Houng, Y. H. Wang, and H. H. Chen, 1993, “An energy- and spatial-dependence    effective mass approach for resonant interband tunneling devices”, J. Appl. Phys., Vol.72,    pp.7379-7387.
  132. Y. H. Wang, H. C. Wei, and M. P. Houng, 1993, “Demonstration of high peak-to-valley    current ratio in an N-p-n AlGaAs/GaAs structure”, J. Appl. Phys., Vol.73, pp.7990-7992.
  133. M. H. Liu, Y. H. Wang, and M. P. Houng, 1993, ”Carrier transport in InAs/A1Sb/GaSb    interband tunneling structures”, J. Appl. Phys., Vol.74, pp.6222-6226.
  134. H. Liu, Y. H. Wang, and M. P. Houng, 1993, “The effect of the InAs layer thickness on the peak current density and subband properties of the GaSb/InAs/GaSb/AlSb/InAs structures”, J. Appl. Phys.,  Vol.75, pp.2699-2705.
  135. M. P. Houng, Y. H. Wang, and H. H. Chen, 1992, “The negative differential resistance of      GaAs delta-doped structures due to resonant interband tunneling”, J. Appl. Phys., pp.780- 782.
  136. M. P. Houng, Y. H. Wang, H. H. Chen, and C. C. Pan, 1992, “The NDR behavior in GaAs Delta-doped structures”, Solid-State Electronics, Vol.35, pp.67-71. 
  137. M. P. Houng, Y. H. Wang, C. L. Shen, J. F. Chen, and A.Y. Cho, 1992, “The improvement of peak   to valley ratio by the incorporation of the InAs layer into the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure”, Appl. Phys. Lett. Vol.60, pp.713-715.    
  138. M. P. Houng, Y. H. Wang, C. L. Shen, J.F. Chen, and A.Y. Cho, 1992, “The influence of InAs well thickness on the NDR behaviors in GaSb/AlSb/InAs/GaSb/AlSb/InAs double barrier structures”, J. Vac. Sci. Technol. B, Vol.10, pp.1048-1050.
  139. Y. H. Wang, M. P. Houng, H. H. Chen, and H. C. Wei, 1992, “Homotype resonant negative   differential resistance characteristics of GaAs resonant tunneling devices”, Semiconductor Science and     Technology, Vol.6, pp.886-889.
  140. Y. H. Wang, M. P. Houng, and P. W. Sze, 1992, “Effects of Sb4/Ga ratios on the electrical properties   of GaSb Schottky diodes”, J. Appl. Phys., Vol.71, pp.2760-2764.
  141. H. H. Chen, M. P. Houng, Y. H. Wang, and Y. C. Chang, 1992, “Normal incidence    intersubband optical transition in GaSb/InAs superlattices”, Appl. Phys. Lett., Vol. 61, pp. 509-511.  
  142. H. Wang, M. P. Houng, F. H. Chen, P. W. Sze, M. Hong, and J. Mannaerts, 1992, “Study on the      electrical properties of MBE-grown Au/Ag/Fe AlxGa1-xAs Schottky diodes”, J. of Material Science:      Materials in Electronics, Vol.3, pp.206-210.    
  143. H. Wang, M. P. Houng, F. H. Chen, P. W. Sze, and M. Hong, J. Mannaerts, 1992, “An     investigation of molecular beam epitaxy in-situ grown Ag/CaAs Schottky diodes”, J. of Electronic    Materials, Vol. 21, pp.911-915.  
  144. H. Wang, M.P. Houng, H. H. Chen, and H. C. Wei, 1992, “Homotype resonant tunneling structure     in MBE-grown delta-doped GaAs”, J. Vac. Sci. Technol. B, Vol.10, pp.1038-1041.
  145. H. C. Wei, Y. H. Wang, and M. P. Houng, 1992, “Effects of base-emitter junction on the resonant    tunneling bipolar transistor with double barriers in the emitter”, Solid-State Electronics, Vol. 35,     pp.159-164.
  146. M. P. Houng, S. L. Fu, F. L. Jeng, and J. R. Chen, 1991, “Orientation of CdTe epitaxial films on      (100) GaAs grown by vacuum evaporation”, Thin Solid Films, Vol.203, pp.105-111.
  147. Y. H. Wang, M. P. Houng, and H. C. Wei , 1991, “Observation of N-and S-shaped negative    differential resistance behavior in AlGaAs/GaAs resonant tunneling structures”, Solid-State Electronics,  Vol.34, pp.413-418.
  148. M. P. Houng, Y. H. Wang, and H. C. Wei, 1991, “The effect of band offset on the negative     differential resistance characteristics of GaAs resonant tunneling devices”, Semiconductor Science and     Technology, Vol.6, pp.886-889.   
  149. M. P. Houng, Y. H. Wang, and C. L. Shen, 1991, “The NDR characteristics of double-barrier  interband tunneling structures”, J. Appl. Phys., Vol.70, pp.4640-4642.    
  150. J. R. Chen, M. P. Houng, F. L. Feng, C. S. Fang, and W. S. Tse, 1991, “Substrate heating effect on     the growth of CdTe film on InSb substrate by vacuum evaporation”, Surface Science, Vol.251/252,  pp.524-528.   
  151. Y. H. Wang, M. P. Houng, H. H. Chen, and H. C. Wei, 1991, ”Resonant tunneling diode in MBE-grown delta-doped GaAs”, Electron Lett., Vol.27, pp.1667-1668. 
  152. C. Chen, K. K. Chong, T. H. Meen, L. Wu, and M. P. Houng, 1991, “Humid Effect on the High-Tc     (Pb, Bi)SrCaCuO Superconductor”, J. Am. Ceram. Soc., Vol.74, pp.1710-1714.    
  153. M. P. Houng, Y. H. Wang, C. L. Shene, J. F. Chen, and A. Y. Cho, 1991, “The influence of InAs    layer on the negative differential resistance behaviors of the   GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure”, 1991 IEDM,    Washington D.C. pp.817-820. 
  154. M. P. Houng, and Y. C. Chang, 1989, “Electronic structures of InxGa1-xAs-InP strained-layer     quantum wells”, J. Appl Phys., Vol.65, pp.3096-3100. 
  155. M. P. Houng, C. I. Hung, and T. S. Wu, 1989, “The valence subband structures of GaAs.AlxGa1-xAs quantum wells under uniaxial stress”, Chinese J. Material Science, Vol.21,  pp.113-118.
  156. M. P. Houng, 1989, “The strain effect on the electronic structures of In1-xGaxAs/GaAs quantum        wells”, Superlattices and Microstructures, Vol.6, pp.421-426.
  157. M. P. Houng, and F. L. Jeng, 1988, “Tunneling effect on the metal-CdTe contact”, Solid-State       Communications, Vol.66, pp.1-5.
  158. M. P. Houng, Y. C. Chang, and W. I. Wang, 1988, “Orientation dependence of valence- subband     structures in GaAs-Ga1-xAlxAs quantum-well structure”, J. Appl. Phys., Vol.64, pp.4609-4613.      
  159. M. P. Houng, S. L. Fu, T. S. Wu, and T. J. Lue, and K. Y. Cheng, 1987, “Pulse electron beam      induced synthesis of CdTe printed films”, J. Material Science Letter, Vol.6, pp.715-717.        
  160. M. P. Houng, S. L. Fu, and T. S. Wu, 1986, “Effect of surface chemisorption on the photo- conductivity enhancement of CdS thick films”, J. Material Science Letter, Vol.5, pp.96-98.    
  161. S. L. Fu, M. P. Houng, and T. S. Wu, 1985, “Physical properties and flux effect of printed CdS thick       films”, Material Research Bulletin, Vol.20, pp.967-978.
  162. S. L. Fu, T. S. Wu, and M.P. Houng, 1985, “The photoconduction mechanisms of screen printed       CdS thick films”, Solar Energy Material, Vol.12, pp.309-317.
  163. Y.K. Su, C. Y. Chang, T. S. Wu, M. P. Houng, and Y. H. Wang, 1981, “Wavelength and       temperature dependence of RAPD laser detectors”, Applied Optics, Vol.20, pp.4225-4258.
  164. C Y. Chang, Y. K. Su, M. K. Lee, L. G. Chen, and M. P. Houng, 1981, “Characterization of GaAs  epitaxial layers by low pressure MOVPE using TEG as Ga source”, J. Crystal Growth,  Vol.55, pp.24-29.
  165.  J. R. Chen, M. P. Houng, S. K. Hsiung, and Y. C. Liu, 1980, “Oxidation mechanism in TiSi2 films  on single silicon substrates”, Appl. Phys. Lett., Vol.37, pp.824-826.                      
  166. M. P. Houng, Y. H. Wang, H. H. Chen, H. Lie, and A. Y. Cho, 1994, “Normal incidence      intersubband absorption at 11.7um in GaSb/InAs superlattice”Proc. M. R. S. (1994 spring      conference), San Diego, U.S.A.
  167. C. H. Chu, C. I. Hung, M. P. Houng and Y. H. Wang,  “Field-induced mixing effect and electron- phonon scattering processes between bound and continuum states: dark current mechanisms of      quantum-well infrared photodetectors”, Submitted to Solid State Electronics.
  168. 王瑤池, 謝關峻, 徐明生, 黃文啟, 湯譯增, 洪茂峰, 2002, “類鑽碳膜矽基板上沉積氧化鋅薄膜對表面聲波元件之效用”, 陸軍軍官學校黃埔學報, 第四十三輯, pp. 407-418
  169. S.H. Tsai, I.T. Tang, M.P. Houng, Y.H. Wang, 2002, “A design rule of surface acoustic wave       filter”, J. of Materials Science and Engineering(Chinese), Vol. 34, No.4, pp. 231-238
  170. K.L. Lew, T.K. Chiang, Y.H. Wang and M.P. Houng,, 1997, “ A model for heterostructure-emitter     bipolar transistor” , Solid State Electronics, Vol. 41, Issue 9, pp. 1337-1344

B. Conference papers

a.國際會議

1          Chin-Sheng Chang, Ding-Bing Lin, Kuo-Chiang Hung, I-Tseng Tang, Mau-Phon Houng, “Simultaneous Switching Noise Mitigation in High-Speed Circuits Using Ring-Type High-Impedance Surface Structures, “Progress In Electromagnetics Research Symposium, 2008.

2          Chin-Sheng Chang, Ding-Bing Lin, Kuo-Chiang Hung, I-Tseng Tang, Mau-Phon Houng, “Simultaneous Switching Noise Mitigation in High-Speed Circuits Using Ring-Type High-Impedance Surface Structures, “ Progress In Electromagnetics Research Symposium, 2008.

3          Chien-Chun Wang, Chien-Chih Liu, T.Y. Hsu, Chen-I Hung, Yeong-Her Wang, and Mau-Phon Houng, ” Increasing the Extraction Efficiency of AlGaInP-Based LEDs with Nanometer Dimensions Textured Surface,”International Electron Devices and Materials symposium (IEDMS) , 30 Nov-01 Dec., Hsinchu, Taiwan, 2007

4          Chin-Sheng Chang, Tung-Ming Chen, Tsung-Hui Huang, Albert Hung, Chien-Chih Liu, Yeong-Her Wang, Mau-Phon Houng, 2006. “Packaging Effect on Bandwidth Enhancement of Antenna”, International Electron Devices and Materials Symposia.

5          Jian-Yi Li, Jian-Lun Chu, Chao-Cheng Ou, Kun-Ho Lin, I-Hao Chan, Hsun-Chin Chen, Yeong-Her Wang, Mau-Phon Houng,2006. “Bondwire Effect on Low Power Inductive Feedback VCO” International Electron Devices and Materials Symposia

6          Kuan-Wei Lee; Nan-Ying Yang; Kai-Lin Lee; Po-Wen Sze; Mau-Phon Houng; Yeong-Her Wang, 2005. “Liquid phase oxidation on InGaP and its application to InGaP/GaAs HBTs surface passivation”, IEEE Indium Phosphide and Related Materials, International Conference on.

7          Kai-Lin Lee; Kuan-Wei Lee; Men-Hsi Tsai; Po-Wen Sze; Mau-Phon Houng; Yeong-Her Wang, 2005. “InA1As/InGaAs Metamorphic High Electron Mobility Transistor with a Liquid Phase Oxidized InA1As as Gate Dielectric”, Electron Devices and Solid-State Circuits, 2005 IEEE Conference on.

8          Kuan-Wei Lee; Po-Wen Sze; Kai-Lin Lee; Mau-Phon Houng; Yeong-Her Wang, 2005. “InGaP PHEMT with a Liquid Phase Oxidized InGaP as Gate Dielectric”, Electron Devices and Solid-State Circuits, 2005 IEEE Conference on.T. Tang, H.J. Chen. M.P. Houng and Y.H. Wang, “Factor considerations on the novel  surface acoustic wave devices by using piezoelectric materials”, Proceedings of International  Symposium on Electronic Materials and Packaging, EMAP 2002, pp. 457-462.

9          H.J. Chen, I.T. Tang, M.P. Houng and Y.H. Wang, “Reliability issues on the novel surface acoustic wave notch filter”, Proceedings of  International Symposium on Electronic Materials  and Packaging, EMAP 2002, pp.106-111.

10      C.C. Liu, Y.K. Lin, M.P. Houng and Y.H. Wang, 2002, “The interface microstructure on    the reliability of flip-chip laser diode bonding”, Proceedings of  International Symposium on    Electronic Materials and Packaging, EMAP 2002, pp. 438-444.

11      M. P. Houng, Y. H. Wang, and W. J. Chang, 1998, “Improvement of SiO2/Si interface with   the addition of Al by using a room temperature deposition method”, International EDMS,   Tainan, pp.223-226.

12      M. P. Houng, Y. H. Wang, N. F. Wang and C. J. Huang, 1997, “To assess the   characterization of SiO2 films for HgCdTe surface passivation using a novel low temperature   liquid phase deposition”,  1997 Joint International Meeting-the 192th meeting of the ECS M. P. Houng, C. J. Huang, Y. H. Wang, and N. F. Wang, 1997, “A chemical modification   process growth silicon dioxide on GaAs by liquid phase deposition”, 48th Annual Meeting of   the International Society of Electrochemistry”, Paris, France, pp.2117.

13      M. P. Houng, Y. H. Wang, and H. H. Chen, 1991, “The influence of InAs layer on the   negative differential resistance behaviors of the GaSb/AlSb/GaSb/AlSb/InAs double barrier    resonant interband tunneling structure”, 1991 IEEE International Electron Devices Meeting,    Washington, pp. 817-820.

14      M. P. Houng, Y. H. Wang, and H. C. Wei, 1991, “Influences of base-emitter junction on    the resonance tunneling bipolar transistor with a series of double barrier in the emitter”,    Proc. SOTAPOCS XIV, Washington D.C.,U.S.A.

15      J. R. Chen, M.P. Houng, F. L. Jenq, S. C. Fang, and W. S. Tsem, 1990, “Substrate heating   effect on the growth of CdTe films on InSb substrate by vacuum evaporation”, Proc. 11th   European Conference on Surface Science, Salamanca, Spain.

16      S. L. Fu, C. W. Wang, and M. P. Houng, 1986, “Preparations and properties of screen    printed CdTe films”, Proc. 36th Electronic components Conference, CHMT-IEEE, Seattle,    pp.203-209.

17      S. L. Fu, M. P. Houng, and T. S. Wu, 1984, “Effect of Cl on the photoresponse of screen    printed CdS films”, Proc. ISHM, Dallas, pp.115-123.

18      M. P. Houng, S. L. Fu, and T. S. Wu, 1984, “The physical properties of CdS/poly-Si solar    cells with screen printed CdS films”, Technical Digest of International PVSEC-1, Kobe, pp.    773-778.

19      Y. K. Su, C. Y. Chang, T. S. Wu, M. K. Lee, M. P. Houng, and L. G. Chen, 1981, “Growth and properties of GaP/Si devices by MOCVD”, Proc. 8th International     Conference On Chemical Vapor Deposition, pp.387-391.

20      C. Y. Chang, Y. K. Su, Y. H. Wang, and M. P. Houng, 1981, “Design consideration of  MBE growth chamber”, Proc. International Optoelectronic Workshop, pp.124-137. 

b.國內會議

  1. Jain-Yi Li, Han-Jan Chen, Shin-Jung Tu, Kwok-Keung Choung, Fenq-Lin Jenq, Na-Fu Wang, Mau-Phon Houng, 2005. ”The Implementation of Multilayer Signal Transmission of RF MENS Filters”, Electron Devices and Materials Symposia
  2. Chin-Sheng Chang, Tsung-Hui Huang, Han-Jan Chen, Chien-Chih Liu, Lih-Shan Chen, Mau-Phon Houng, 2005. “Microwave Dielectrics Measurement by Using Difference Length Transmission Lines Method”, Electron Devices and Materials Symposia
  3. Chia-Hung Tasi, Feng-Lin Jenq, Chien-Chih Liu, Po-Jen Cheng, and Mau-Phon Houng, “Activation of p-type GaN with Ni film”, Electron Devices and Materials Symposia, Nov. 2005
  4. ain-Yi Li, Han-Jan Chen, Shin-Jung Tu, Kowk-Keung Choung, Fenq-Lin Jenq, Na-Fu Wang, and Mau-Phon Houng, "The Implementation of Multilayer Signal Transmission of RF MEMS Filter”, Electron Devices and Materials Symposia, Nov. 2005.
  5. Chin-Sheng Chang, Tsung-Hui Huang, Han-Jan Chen, Chien-Chih Liu, Lih-Shan Chen, Mau-Phon Houng, “Microwave Dielectrics Measurement by Using Difference Length Transmission Lines Method”, Electron Devices and Materials Symposia, Nov. 2005.
  6. Shih-Jung Tu, Fenq-Lin Jenq, Shyi-Long Shy , Mau-Phon Houng, and Kwok-Keung Chong, “High Frequency MEMS Filters Design”, Symposium on Nano Device Technology 2005, P18, pp.268, May 2005.
  7. Mau-Phon Houng, Kwok-Keung Chong, Fenq-Lin Jenq and Chain-Yi Li, “MEMS Fabrication Using Wet Etching for Millimeter-Wave Applications”, Symposium on Nano Device Technology 2005, P19, pp.268, May 2005.
  8. 王建鈞、陳源信、鄭奉臨、劉建志、鄭博仁、洪茂峰、王永和, “High resistivity region as current blocking layer for GaN LEDs“, 2004台灣光電科技研討會, A-SU-I 12-4.
  9. C.C. Liu, Y-K Lin, J.H. Horng, M.P. Houng and Y.H. Wang, 2001, “ Reliability of laser diode flip-chip on Si substrate using Indium solder” Optics and Photonics Taiwan ’01, Kaosiung, Dec. 13-14, pp. 893-895
  10. C.C. Liu, F.L. Jenq, Y.K. Lin, J.H. Horng, M.P. Houng and Y.H. Wang, 2001, “High thermal conductivity flip-chip laser diode on Silicon substrate”, IMAPS  Taiwan Technical Symposium 2001, Hsinchu, pp.279-282
  11. N. F. Wang, M. P. Houng, Y. H. Wang, Y. T. Cherng, and C. H. Wang, 1995, “Growth Characterization of ZnCdTe Epitaxial Layers on GaAs Substrates by MOCVD”, National Electron Devices and Materials Symposium, pp. 341.
  12. M. P. Houng, 1989, “The strain effect on the electronic structures of In1-xGaxAs/GaAs quantum wells”, Proc. of EDMS 89, Hsinchu, R.O.C. pp. 249-253. 
  13. M. P. Houng, F. L. Jeng, and F. L. Fu, 1988, “The epitaxial Growth of CdTe on InSb substrate by vacuum evaporation method”, Proc. of 1988 Annual Conference of the Chinese Society for Materials Science, pp.57-61.      
  14. M. P. Houng, F. L. Jeng, and K. K. Chong, 1987, “Structure characterizations of CdTe epitaxial layers on GaAs (100) substrates by evaporation method”, Proc. of EDMS, Taipei, pp.96-99.
  15. S. L. Fu, C. H. Yang, and M. P. Houng, 1986, “Studies of AC excited powder electro-luminescence of zinc sulfide”, Proc. CIChE-AIChe symposium on modern chemical engineering technology, Taipei, pp.270-273.        
  16. M. P. Houng, S. L. Fu, and T. S. Wu, 1984, “The physical properties of screen printed CdS on polysilicon heterojunction”, Proc. International EDMS, Hsinchu, pp.597-602.
  17. J. S. Tzeng, Y. K. Su, C. Y. Chang, M. P. Houng, M. C. Wu, and Y. C. Chou, 1983, “Growth and characterization of InGaAsP/InP and InP/InP by LPE”, Proc. EDMS, pp.314-318.   
  18. Y. K. Su, C. Y. Chang, M. P. Houng, Y. H. Wang, and C. C. Hsu, 1982, “Heteroepitaxial growth of InGaAsP film on InP substrate by LPE”, Proc. EDMS, pp.497-502.     
  19. Y. K. Fang, M. P. Houng, and C. Y. Chang, 1982, “The scaling effect of contact resistance on M-S barrier”, ibid, pp.276-281.     
  20. C. Y. Chang, M. K. Lee, Y. K. Su, M. P. Houng, and L. G. Chen, 1981, “Properties oF Sn doped GaAs epitaxial layers by low pressure MOCVD”, ibid, pp.269-279.     
  21. J. R. Chen, M. P. Houng, S. K. Hsiung, and Y. C. Liu, 1980, “Formation of silicon dioxide over titanium silicide layers on silicon substrates”, Proc. 6th symposium on electronic, devices and circuits, R.O.C., pp.103-112.        

C. Books

  1. 　

D. 作品發表(含展演)

  1. 　

E. Other publications

  1. 　

研究計畫 (至少五年內)

A. 國科會計畫

  • 高頻操作時Low k層介電偏移效應對被動元件影響之研究 2008
  • 高亮度ZnO發光二極體關鍵技術研究(III) 2008
  • 高亮度ZnO發光二極體關鍵技術研究(II) 2007
  • 高亮度ZnO發光二極體關鍵技術研究(I) 2006
  • 以新型耦合連接器取代傳統連接孔洞於整合射頻接收機模組之特性探討與可行性分析(I) 2006
  • 氧化鋅紫外光二極體之研究 2005
  • 無線通訊射頻接收機機體化之研製(2/2) 2004
  • 高功率發光二極體製作之研究(I) 2003
  • 以可動式微鏡面調變半導體雷射輸出特性之研究 2002
  • 以液相沉積氧化層為基礎之砷化鎵微波元件的晶片鍵合技術之研究(II)─子計畫一:利用LPD選擇性沉積薄層氧化層以製作砷化鎵MOSFET之研究 2001
  • 以鑽石膜提升表面聲波元件聲速之研究 2001
  • 以液相沈積氧化層為基礎之砷化鎵微波元件的晶片鍵合技術之研究(II)─總計畫 2001
  • 氮化鋁彈性波元件之研究（I）─子計畫二:利用表面聲波與電磁波交互作用之A1N元件研究(I):A1N表面聲波參數放大器之研究 2000
  • 利用光電技術之晶片互連計畫(2/2)─子計畫三：晶片互連系統之光電晶片鍵合技術研究(2/2) 2000
  • 以液相沉積氧化層為基礎之砷化鎵微波元件的晶片鍵合技術之研究─子計劃一:利用LPD選擇性沉積薄層氧化層以製作砷化鎵MOSFET之研究 2000
  • 以液相沈積氧化層為基礎之砷化鎵微波元件的晶片鍵合技術之研究─總計劃:以液相沈積氧化層為基礎之砷化鎵微波元件的晶片鍵合技術之研究 2000
  • 以液相沈積法製作高K值及低K值介電膜之研究 1999
  • 載子散射對量子井雷射非線性行為之影響 1999
  • 利用光電技術之晶片互連計畫(1/2)─子計畫三：晶片互連系統之光電晶片鍵合技術研究(1/2)  1999

B. 一般建教案

  • 　

指導學生情況 (至少五年內)

A. 指導學生

  • 黃俊憲(博士)、王建鈞(博士)、黃志森(博士)、蔡佳宏(博士)、李建宜(博士)、張志聖(博士)、呂維倫(博士)、黃慧玲(博士)、張坪款(博士) 、林文正(博士)、賴光傑(博士) 、許德源(博士)
  • 王世傑(碩士)
  • 王崇銘(碩士96級)
  • 周盈村(碩士97級)、楊淙淵(碩士97級)、彭智群(碩士97級)、王偉欽(碩士97級)、李景弘(碩士97級)
  • 洪品堃(碩士98級)、林世雄(碩士98級)、邱馨慧(碩士98級)、蔡宗憲(碩士98級)
  • 吳俊緯(碩士99級)、江亞翰(碩士99級)、黃國展(碩士99級)、洪玥煜(碩士99級)、洪榮志(碩士99級)

B. 指導學生之特殊榮譽

  • 86年指導學生劉錦隆獲中國電機工程學會青年論文獎
  • 85年指導學生陳輝煌獲中國電機工程學會青年論文獎
  • 95年指導學生 歐昭成、朱健綸、陳東明、李建宜與陳漢珍，於95年6月3日參加『94學年度全國大專校院通訊科技專題製作競賽研究所組競賽』，晉級複賽並參與展出，作品為『透明基板天線與RFID讀寫器研製』。

主辦及參與國際會議 (至少五年內)
  • 　

教學與研究國際交流
  • 受聘至國外大學及學術機構講學次數：
  • 至國外學術機構訪問次數：
  • 指導之學生至國外學術機構訪問人次：
  • 指導之學生至國外大學選讀人次：
  • 邀請國外教師至本單位訪問人次：
  • 邀請國外學生至本單位訪問人次：
  • 與國外教師共同主持研究計畫人次：