image001

Yan-Kuin Su

folderPosition

arrow_r Honorary Chair Professor

folderTelephone number

arrow_r+886-6-275-7575 ext.62382

folderFAX

arrow_r+886-6-235-1864

folderE-mail

arrow_ryksu@mail.ncku.edu.tw

folderLab

arrow_rSemiconductor Device Lab. (92C81R,EE Department Building,#1,Da-Tsuen Rd.,Tainan,Taiwan)

folderCourses

2007 Fall

On secondment. (The president, Kun Shan University)

2008 Fall

      On secondment. (The president, Kun Shan University)

2009 Fall

      On secondment. (The president, Kun Shan University)

2010 Fall

  On secondment. (The president, Kun Shan University)

2011 Fall

     Honorary Chair Professor

 

 

folderEducations

·         Ph.D.Graduate School of Electrical Engineering, National Cheng Kung University (1979)

·         Master Graduate School of Electrical Engineering, National Cheng Kung University(1973)

·         Bachelor Department of Electrical Engineering, National Cheng Kung University(1971)

folderExperiences

l          Academy of Educators, NCKU

l          Science Profession Medal, National Science Council

l          IEEE Fellow for contributions to optoelectronics and nanophotonics research and education─Institute of Electrical and Electronics Engineers  (2007)

l          Director, Advanced Optoelectronic Technology Center, National Cheng Kung University   (2006)

l          Chair, TC-4 Nano-optics, Nano-optoelectronics, and Nano-photonics, IEEE Nanotechnology Council   (2006-)

l          Chair Professor, National Cheng Kung University   (2001-)

l          IEEE Electron Devices Society, Taiwan Chapter, Vice Chairman   (2001-)

l          Dean of Academic Affairs, NCKU   (2001-)

l          President, Electronic Device and Materials Society (EDMS), Taiwan   (2000)

l          Director General, Department of Engineering and Applied Science, National Science Council   (1998-2001)

l          Honorary Professor, Chang Chun Institute of Optics and Fine Mechanics, China   (1997-)

l          IEEE Taipei Chapter, Steering Committee Member   (1997-)

l          Director General, Office of Research & Development, National Cheng Kung University   (1995-1998)

l          President, Chinese Vacuum Society, R.O.C.   (1995-1997)

l          Vice Dean, College of Engineering, National Cheng Kung University   (1993-1995)

l          Visiting Professor, Graduate Institute of Physics, Stuttgart University, Germany   (1993)

l          Adjunct Professor, State University of New York at Birmingham in the U.S.A.   (1991-)

l          Chairman, Dept. of Electrical Engineering, National Cheng Kung University   (1989-1993)

l          Director of Engineering and Technology Promotion Center, National Science Council   (1987-1989)

l          Member of Technical Staff, AT&T, Bell Laboratories, U.S.A.   (1986-1987)

l          Professor, Dept. of Electrical Engineering, National Cheng Kung University   (1983-)

l          Director of Laboratories, Dept. of Electrical Engineering, National Cheng Kung University   (1980-1984)

l          Postgraduate Research, Department of Electrical Engineering, University of Southern California, U.S.A.   (1979-1980)

l          Associate Professor, Graduate Institute of Electrical Engineering, National Cheng Kung University   (1979-1983)

folderSpecialities

·                     Semiconductor Engineering and Devices

·                     Opto-Electronic Devices

·                     Microwave Device and Integrated Circuits

folderHonors

·                     Fellow, Materials Research Society Taiwan(2011)

·                     Outstanding Research Award Criteria－Pan Wen Yuan Foundation(2011)

·                     Fellow, Academy of Educators─National Cheng Kung University(2008)

·                     Awarding of Science Profession Medals, National Science Council(2007)

·                     IEEE Fellow ─ Institute of Electrical and Electronics Engineers(2007)

·                     Optical Engineer Medal – Chinese Optical Engineering Society(2005)

·                     Far Eastern Y.Z. Hsu Science and Technology memorial Foundation Award(2004)

·                     Xiaman University Honorable Professor(2003)

·                     Dr. K T. Lee Awards(2003)

·                     Chair Professor, NCKU(2001)

·                     The Millennium Medal, The Who’s Who Institute(2001)

·                     TECO Excellent Research Award(2000)

·                     Sun Yan-Sen Outstanding Research Award(2000)

·                     Ho’s Culture and Education Foundation ─ Excellent Research Medal(1999)

·                     Member, Academy of Asia Pacific Materials Society(1998)

·                     Electrical Engineer Medal – Chinese Electrical Engineering Society(1998)

·                     Excellent Electrical Engineering Professor – Chinese Electrical Engineering Society(1997)

·                     Outstanding Achievement in the Field of Electrical Engineering – International Biographical Center, Cambridge, England(1996)

·                     The 20th Century Award for Achievement – International Biographical Center, Cambridge, England(1996)

·                     Who’s Who in Science and Technology – Marquis Who’s Who TM(1996)

·                     Special Researcher Fellow – National Science Council(1996-1999)

·                     Excellent Engineering Professor – Chinese Engineer Society(1995)

·                     Excellent Research Award – National Science Council(1994-1995)

·                     Best Teaching Professor – Ministry of Education(1992)

·                     Excellent Research Award – National Science Council(1992-1993)

·                     Excellent Research Award – National Science Council(1990-1991)

·                     Excellent Research Award – National Science Council(1988-1989)

·                     Excellent Research Award – National Science Council(1986-1987)

·                     Excellent Young Engineer – Chinese Engineer Society(1980)

·                     First Prize on Research Paper Award – Chinese Electrical Engineering Society(1973)

folderPatents

(1) “集魚燈具裝置” (FISHING LAMP APPARATUS)，ROC patent (Invention No. I318824)

(2)   “一種適用於GPS/WLAN之雙頻濾波器”(A DUAL-BAND BANDPASS FILTER APPLIED ON GPS / WLAN APPLICATIONS) ROC patent (Invention No. M382600)

(3)   “超寬頻雙工器” (AN ULTRA WIDE BAND (UWB) DIPLEXER ) ，ROC patent (Invention No.1325653)

(4)  “具指插式步階阻抗共振器之寬頻濾波器“ (A WIDEBAND FILTER WITH INTERDIGITAL STEPPED IMPEDANCE RESONATORS) － ROC patent (Invention No. I318824)

(5)  “耦合增強式超寬頻濾波器“(AN ULTRA WIDE BAND (UWB) FILTER WITH ENHANCED COUPLING) － ROC patent (Invention No. I307576)

(6)  “PHOTODETECTOR AND METHOD FOR MANUFACTURING THE SAME“－ ROC patent (Invention No.I281267)

(7)  “一種使用硫化鋅摻鏑(ZnS : Dy)薄膜的白光發光二極體之製程方法“ (THE PROCESS OF WHITE - LIGHT LED BY ZINC SULFUR DOPED DYSPROSIUM THIN FILM) － ROC patent (Invention No. I297552)

(8)  “一種具有低溫多晶矽薄膜之太陽能電池元件結構“(A SOLAR CELL STRUCTURE WITH LOW TEMPERATURE POLYSILICON THIN FILMS) － ROC patent(Invention No. M330563)

(9)  “具有微晶矽質薄膜之太陽能電池“ (A SOLAR - CELL WITH EMBEDDED MICROCRYSTALLINE SILICON THIN FILMS) － ROC patent(Invention No. M327085)

(10)  “一種具有缺陷接地結構之平面式濾波器“(A PLANAR FILTER WITH THE DEFECTED GROUND STRUCTURE)－ROC patent(Invention No. M312785)

(11)  “光檢測器及其製造方法“ (PHOTODETECTOR AND METHOD FOR MANUFACTURING THE SAME)－ROC patent(Invention No. I281267)

(12)  “EMBEDDED METAL HEAT SINK FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME“－Germany patent (2009核准)

(13) “METHOD FOR MANUFACTURING HEAT SINK OF SEMICONDUCTOR DEVICE“ －Germany paten (Inventaion No.10 2007 021 983) 申請日期:2006/06/26、公開日期:2009/04/09

(14) “EMBEDDED METAL HEAT SINK FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME“－US patent (Invention No. US 7452755 B2) - 2008

(15) “METHOD FOR MANUFACTURING HEAT SINK OF SEMICONDUCTOR DEVICE“－US patent (Invention No. 7,387,915 B2)- 2008

(16) “METHOD FOR MANUFACTURING HEAT SINK OF SEMICONDUCTOR DEVICE“－Japen patent (2006申請中)

(17) “EMBEDDED METAL HEAT SINK FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME“－ROC patent (Invention No. I297537) 專利期限 : 2009/03/21 ~ 2026/6/25

(18) “METHOD FOR MANUFACTURING HEAT SINK OF SEMICONDUCTOR DEVICE“ －ROC patent (Invention No. I 307915) 專利期限: 2009/03/21 ~ 2026/6/25

(19) “EMBEDDED METAL HEAT SINK FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME” – Korea patent (Invention No. 10-0781917號)申請日期 : 2006/10/24、公開日期 : 2007/11/28、專利期限 : 2006/10/24-2026/10/24

(20) “一種使用步階式阻抗共振組成之平面雙工器” (A DIPLEXER USING STEPPED IMPEDANCE RESONATORS) － ROC patent (Invention No. M324306)

(21) “具有多階層微晶矽質之薄膜太陽能電池”(A THIN FILM SOLAR-CELL WITH MULTI LEVEL MICROCRYSTALLINE SILICON) －ROC patent (Invention No. M323112)

(22) “一種共面波導式超寬頻濾波器” (A WIDEBAND FILTER WITH COPLANAR WAVEGUIDE TYPE)－ROC patent (Invention No. I284998)

(23) “一種具有橢圓函數響應之介質濾波器”(A DIELECTRIC FILTER WITH AN ELLIPTIC FUNCTION RESPONSE)－ROC patent (M301415)

(24) “具有奈米金屬粒子儲存單元之非揮發性記憶體單元的構造”(A STRUCTURE OF NONVOLATILE MEMORY WITH NANO METALLIC PARTICLES FOR STORAGE NODES)－ROC patent (Invention No. M312769)

(25) “METHOD FOR MANUFACTURING HEAT SINK OF SEMICONDUCTOR DEVICE” –China patent (2006申請中)

(26) “EMBEDDED METAL HEAT SINK FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME” –China patent (Invention No.488331)－Sep 30, 2006

(27) “一種共面波導式超寬頻濾波器”(A WIDEBAND FILTER WITH COPLANAR WAVEGUIDE)－ROC patent (Invention No. I284998 )

(28) “具步階阻抗共振器之髮型寬頻濾波器”(A HAIRPIN LINE WIDEBAND FILTER WITH STEPPED IMPEDANCE RESONATORS)－ROC patent (Invention No. M311185)

(29) “具混附波壓抑之髮夾型寬頻濾波器”(A HAIRPIN-LINE WIDEBAND FILTER WITH THE SPURIOUS RESPONSE SUPPRESSION)－ROC patent (Invention No. M311129)

(30) “髮夾型寬頻雙工器”(A HAIRPIN-LINE ULTRA WIDE BAND DIPLEXER)－ROC patent (Invention No. M311130)

(31) “共面波導式饋入之多角形寬頻天線”(A CPW-FED WIDEBAND POLYANGLE-SHAPED ANTENNA)－ROC patent (申請中)

(32) “複數枝路之寬頻天線”－ROC patent (申請中)

(33) “微帶線饋入之橢圓形超寬頻天線”－ROC patent (申請中)

(34) “超寬頻雙工器”－ROC patent (Invention No.95124788)

(35) “一種具有缺陷接地結構之平面式濾波器”(A PLANAR FILTER WITH THE DEFECTED GROUND STRUCTURE)－ROC patent (Invention No.M 304165) –Nov 21, 2006

(36) “一種奈米金屬粒子誘發低溫多晶矽的製程方法” (A PROCESSING METHOD OF LOW TEMPERATURE POLY SILICON INDUCED BY NANO-METALLIC PARTICLES)－ROC patent (Invention No.I 267123) –Nov 21, 2006

(37) “一種具有埋藏式元件之寬止帶濾波器”(A WIDE STOPBAND FILTER WITH EMBEDDED ELEMENTS)－ROC patent (Invention No.M 300375) –Nov 1, 2006

(38) “具寬止帶且快速衰減之超寬頻濾波器”(AN ULTRA WIDE BAND (UWB) FILTER WITH WIDE STOPBAND AND HIGH ATTENUATION RATE)－ROC patent (Invention No.M 300376) –Nov 1, 2006

(39) “具混附液壓抑之超寬頻濾波器”(AN ULTRA WIDE BAND (UWB) FILTER WITH SUPPRESSING THE SPURIOUS RESPONSE)－ROC patent (Invention No.M 300377) –Nov 1, 2006

(40) “一種低溫多晶矽的製程方法”(PROCESSING METHOD OF LOW TEMPERATURE POLY SILICON)－ROC patent (Invention No.M 263341) –Oct. 10, 2006

(41) “具有指插式耦合線之超寬頻濾波器”(AN ULTRA WIDE BAND (UWB) FILTER WITH INTERDIGITAL COUPLED LINES)－ROC patent (Invention No.M 295345) –Aug 1, 2006

(42) “具止帶快速衰減之超寬頻濾波器”(AN ULTRA WIDE BAND (UWB) FILTER WITH FAST STOPBAND ATTENUATION)－ROC patent (Invention No.M 295346) –Aug 1, 2006

(43) “發光二極體之製造方法”－ROC patent (Invention No. I268003)－2006

(44) “Lateral current blocking light emitting diode and method of making the same”－US patent (Invention No. 6781147)－2003

(45) “Fabrication method for GaN MOSFETs”－ROC patent (Invention No. 169680)－2003

(46) “Structure of GaN MSM UV photodetector and its fabrication method”－ROC patent (Invention No. 169681)－2002

(47) “A modified suceptor structure for epitaxial wafers”－ROC patent (Invention No. 186781)－2002

(48) “A modified water cooled gas nozzle”－ROC patent (Invention No. 180792)－2002

(49) “Ohmic contact structure of II-VI semiconductor and its fabrication process”－US patent (Invention No. 6469319B1)－2002

(50) “一種磊晶片乘載器結構改良”－ROC patent (Invention No. 186781) –Jan 21, 2002

(51) “II-VI Semiconductor Ohmic Contact and Manufacturing Technology”－US patent (Invention No. 6469319)－2001

(52) “一種水冷式雙層毛細管之氣體噴頭結構改良”－ROC patent (Invention No. 180792) –Sep 1, 2001

(53) “氮化鎵金屬－半導體－金屬型紫外光感測器之結構及其製造方法”－ROC patent (Invention No. 169681)－December 21, 2002

(54) “橫向電流阻障發光二極體及其製造方法"－ROC patent (Invention No. 122756)－November 12, 2002

(55) “氮化鎵金氧半場效電晶體之製造方法”－ROC patent (Invention No. 169680)－December 21, 2002

(56) “II-VI Semiconductor Ohmic Contact and Manufacturing Technology”-ROC patent (Invention No. 132585) May 16, 2001

(57) “低雜訊遠紅外線汞鎘碲(HgCdTe)光偵測器及其製造方法”－ROC patent (Invention No.120926) –September 21, 2000

(58) “多峰共振穿透二極體大信號模擬電路”－ROC patent (Invention No. 160174), 2000

(59) “Low Noise Infrared HgCdTe Photo-detectors and Manufacturing Technology”－ ROC patent (Invention No.120926) September 21, 2000

(60) “Two-Mode InGaSb/GaSb Strained-Layer Superlattice Infrared Photodetector"　－U.S. patent (No. 6037604)－March 14, 2000

(61) “A Multi-Peak Resonant Tunneling Diode – Based Electronic Circuit and Large Signal Multi-Peak RTD SPICE Model”, ROC patent (Invention No. 394453) June 11, 2000

(62) “InAs-GaSb Superlattice Structure Infrared Detectors Fabricated by Organic Vapor Phase Epitaxy" – U.S. patent (No. 6005259) – Dec. 21, 1999

(63) “Red Semiconductor Laser of Low Beam Divergence” – U.S. patent (No. 5923659) – July 13, 1999

(64) “High Efficiency InGaP NIP Solar Cell” – U.S. patent (No. 5911839) – June 15, 1999

(65) “The InAs/GaSb Superlattice Infrared Detector by MOCVD System” –ROC patent (Invention No. 104113) – May 21, 1999

(66) “Low Divergence Beam Angle of Red Semiconductor Laser” – ROC patent (Invention No. 101681) – Feb. 11, 1999

(67) “高效率磷化鎵銦NIP太陽電池”－ROC patent (Invention No. 130666)－Nov. 21, 1997

(68) “Double Frequency GaInSb Strained Layer Superlattice” – ROC patent (Invention No. 67602) – July 5, 1995

(69) “以有機金屬氣相磊晶法製作砷化銦/銻化鎵超晶格紅外線檢測器之製法”-ROC patent (Invention No.00358876)

(70) “雙頻銻化銦鎵應力層超晶格選頻器”-ROC patent (Invention No.00229334)－Sep. 1, 1994

(71) “A Multi – Peak Resonant Tunneling Diode - Based Electronic Circuit and Large Signal Multi – Peak Resonant Tunneling Diode SPICE Model” – U.S. patent (No. 5,535,146) – Apr. 27, 1995

folderPublication List

(A) Referred Paper

1.                  Y. K. Su, C. C. Wei and T. S. Wu, ”Transport Properties of CdZnAs Compound Semiconductor”, Chinese Journal of Material Science, Vol.7, pp.1-8 (1975)

2.                  Y. K. Fang, Y. K. Su and C. Y. Chang, "Contact Resistance in metal Semiconductor System", Solid State Electronics, Vol.22, pp.933-938 (1979) EI/SCI

3.                  Y. K. Fang, Y. K. Su and C. Y. Chang, "Factors Controlling the contact Resistance of Semiconductor", International Journal of Electronics. Vol.47, pp.577-585 (1979)

4.                  Y. K. Su, C. Y. Chang T. S. Wu and B. D. Liu, "Temperature Dependent Characteristics of a PIN Avalanche Photodiode (APD) in Ge, Si and GaAs", Optical and Quantum Electronics, Vol.11, pp.109-117 (1979)

5.                  Y. K. Su , C. Y. Chang and T. S. Wu,"Temperature Dependent Characteristics of Reach-Through Avalanche Photodiode(RAPD) in Ge, Si and GaAs", Optical and Quantum Electroics , Vol.11, pp.377-384 (1979)

6.                  Y. K. Su, C. Y. Chang and T. S. Wu, "Characteristics of a P-I-N Laser Detectors Their Dependence on Wavelength and Temperature", Applied Optics, Vol.18, pp.3510-3512 (1979)

7.                  Y. K. Su , C. Y. Chang and T. S. Wu, "A Study of High Efficiency, High Speed, Low Noise Optical Detector" , Research Reports, National Science Council, pp.25.1-25.31 (1979)

8.                  C. Y. Chang Y. K. Su and C. C. Chi, "An Investigation of Minority Carrier Lifetime in Silicon Doped Either with Zinc or Cobalt", International Journal of Electronics, Vol.48, pp.1-6 (1980)

9.                  C. Y. Chang, Y. K. Su, L. G. Chen and T. S. Wu, "Characteristics of GaAs Epitaxial Layer by Low Pressure MOVPE Using TEG as Ga Source", J. Crystal Growth, Vol.55, pp.24-29 (1981)

10.              Y. K. Su, C. Y. Chang and T. S. Wu, "Wavelength and Temperature Dependence of RAPD Laser Detector", Applied Optics Vol.20, pp.4255-4258 (1981)

11.              C. C. Wei, Y. K. Su, C. C. Chang and B. D. Liu, "LPE Growth of GaAs:Si by Temperature Difference Method and its Properties", Chinese Journal of Material Science, Vol.13, pp.56-64 (1981)

12.              C. C. Wei, Y. K. Su, C. C. Chang and B. D. Liu, "The Study of GaAs Epilayer with Contact Ratio of Si to Ga Solvent in LPE Growth", Proc. of National Science Council, Part A: Applied Science, Vol.6, pp.107-116 (1982)

13.              Y. K. Su, "The Study of GaAs Epilayer with Contact Ratio of Si to Ga Solvent in LPE growth", Proc. of National Science Council, Part A: Applied Science, Vol.6, pp.107-116 (1982)

14.              M. K. Lee, C. Y. Chang and Y. K. Su, "Investigation of Sn-Doped GaAs Epilayers Grown by Low Pressure MOCVD", Appl. Phys. Letts., Vol.42, pp.88-89 (1983)

15.              M. K. Lee, C. Y. Chang J. S. Tzeng and Y. K. Su, "Control of SiO2 Properties by RF Sputtering", J. Electrochemical Society, Vol.130, pp.658-659 (1983)

16.              M. K. Lee, C. Y. Chang, Y. K. Su and M. P. Houng, "Enhancement of Growth rate of Sn-Doped GaAs Epilayers Grown by Low Pressure MOCVD", J. Appl. Phys., Vol.54, pp.5464-5467 (1983)

17.              L. G. Cheng, C. Y. Chang Y. K. Su., and T. S. Wu, "Numerical Analysis of An Injection Layer with Stripe Geometry", Optics and Lasers in Engineering , Vol.4, pp.195-202 (1983)

18.              Y. K. Su, M. C. Wu, K. Y. Cheng and C. Y. Chang, "Characteristion of Epitaxial InGaAsP Laser on InP Grown by LPE", J. Crystal Growth 67, pp.477-492 (1984)

19.              Y. K. Su, Y. C. Chou, C. Y. Chang and M. K. Lee, "Characteristion of P-GaAs by Low Pressure MOCVD Using DEZ as Dopant", J. Crystal Growth 67, pp.471-476 (1984)

20.              C. C. Wei, Y. K. Su, C. C. Chang and S. C. Lu,"The fabrication of GaAs Variator Diode by LPE Method", Proc. of the National Science Council, Part A: Physical Science and Engineering, Vol.8, pp.195-201 (1984)

21.              C. Y. Chang M. C. Wu, Y. K. Su, C. Y. Nee and K. Y. Cheng, "The Doping Concentration Dependence of the Zinc Acceptor Ionization Engery in InGaP", J. Appl. Phys., Vol.58, pp.3907-3908 (1985)

22.              Y. K. Su "LPE growth of InAsxSb1-x Ternary for Minor InAs Amounts", J. Materials Science Letters, Vol.4, pp.1513-1514 (1985)

23.              M. C. Wu, Y. K. Su, C. Y. Chang and K. Y. Cheng "Tellurium and Zinc Doping in InGaP Grown by LPE", J. Appl. Phys. Vol.58, pp.4317-4321 (1985).

24.              M. C. Wu, Y. K. Su, K. Y. Cheng and C. Y. Chang "LPE Growth of InGaP on (100) GaAs by a Sputtering Method", J. Appl. Phys., Vol.58, pp.1537-1541 (1985).

25.              C. C. Wei, Y. K. Su, C. C. Chang and S. C. Lu "LPE Growth of GaAs: Si by Temperature Difference Method", Bulletin of Materials Science, Vol.8, pp.439-448 (1986).

26.              Y. K. Su, Y. C. Chou and C. Y. Chang "Investigation of Se-Doped GaAs Epilayers Grown by Low Pressure Metal-Organic Chemical Vapor Deposition", The Journal of Physics and Chemistry of Solids, Vol.47, No.1, pp.105-108 (1986).

27.              Y. K. Su, M. C. Wu and C. Y. Chang, "Surface Analysis of In1-xGaxAsyP1-y Epilayer Grown by Liquid Phase Epitaxy", Journal of Materials Science, England, Vol.5, pp.91-92 (1986).

28.              Y. K. Su, C. C. Wei, C. C. Chang and S. C. Lu , "Surface Morphology and Properties of GaAs Epilayers Controlled by Temperature Difference Method of LPE", Bulletin of Materials Science, Vol. 8, No.1, pp.29-38 (1986).

29.              M. C. Wu, Y. K. Su, K. Y. Cheng and C. Y. Chang "High Purity InGaP Grown on GaAs by LPE", Jpn. J. Appl.Phys. Vol.25, pp. L90-L91 (1986).

30.              Y. K. Su, M. C. Wu, K. Y. Cheng and C. Y. Chang "Electrical and Optical Properties of High Purity InGaP Grown on GaAs by LPE", J. Crystal Growth, Vol.76, pp.299-304 (1986).

31.              S. C. Cheng, Y. K. Su and J. S. Tzeng "The Fabrication and Characterization of Ion-Sensitive Field-Effect Transistors with Silicon Diode Gate", J. Applied Physics, Vol.19, pp.1951-1956 (1986).

32.              Y. K. Su, M. C. Wu and C. Y. Chang "Fabrication of Single Heterojunction AlGaAs/InGaP Electroluminescent Diodes"J. Appl. Phys., Vol.62, pp.2541-2544 (1987).

33.              U. Koren, B. I. Miller, Y. K. Su, T. L. Koch and J. E. Bower "Low Internal Loss Separate Confinement Heterostructure InGaAs/InGaAsP Quantum Well Laser", Appl. Phys. Lett. Vol.51, pp.1744-1746 (1987).

34.              B. I. Miller, U. Koren, R. J. Capik and Y. K. Su,"InGaAsP/InP High-Power Semi-insulating Blocked Planar Baried Heterostructure Laser Grown by Atmospheric Organometallic Vapor Phase Epitaxy", Appl. Phys. Lett. Vol. 51, pp.2260-2262 (1987).

35.              C. C. Chang, C. C. Wei and Y. K. Su, and H. C. Tzeng, "Growth and characterization of ZnSe Single Crystal by Closed Tube Method", J. Crystal Growth , Vol.84, pp.11-20 (1987).

36.              C. T. Lee, Y. K. Su and H. M. Wang, "Effect of R.F. Sputtering Parameter on ZnO Films Deposited onto GaAs Substrates", Thin Solid Films, Vol.150, pp.283-289 (1987).

37.              Y. K. Su, "The Development and Application of Chemical Beam Epitaxy", Instruments Today, Vol.9, pp.26-44 (1987).

38.              Y. K. Su, T. A. Dai and S. C. Chen, "Effect of the InP Doping Density on the Electrical Properties of the 2DEG in LPE-Grown Modulation-Doped Heterostructures", Solid State Electronics, Vol.31, pp. 953-958 (1988). EI/SCI

39.              M. C. Wu, Y. K. Su, C. Y. Chang and K. Y. Cheng, "Electrical and Optical Properties of Heavy Doped Mg-and Te-GaAs Grown by Liquid Phase Epitaxy", Solid State Electronics, Vol.31, pp.251-256 (1988). EI/SCI

40.              Y. K. Su, M. C. Wu and B. S. Chiu, "The Doping Concentration Dependence of the Zinc and Tin in InGaAs", Vol.64, pp.2211-2213 (1988).

41.              S. C. Chen, Y. K. Su and F. S. Juang, "Characterization and Growth of AlGaSb by Liquid Phase Epitaxy", J. Cryst. Growth, Vol.92, pp.108-112 (1988). EI/SCI

42.              T. A. Dai and Y. K. Su, "InGaAs/InP Modulation Doped Heterostructures Grown by Liquid Phase Epitaxy", Jpn. J. Appl. Phys. Vol.27, pp.1100-1102 (1988). EI

43.              T. T. Su, Y. K. Su and C. Y. Chang, "Fabrication of 1.3m InGaAsP/InP Double Heterojunction Lasers Grown by Liquid Phase Epitaxy", Journal of the Chinese Institute of Engineers, Vol.11, pp.45-51 (1988).

44.              Y. K. Su and T. L. Chen, "1.3 um InGaAsP/InP Crescent Buried Heterostructure Laser Diodes Grown by Liquid Phase Epitaxy", Journal of the Chinese Institute of Engineers, Vol. 11, pp.395-405 (1988).

45.              Y. K. Su, H.P. Hung and J.H. Wang, "The Fabrication and Characterization of InGaAs Photodetectors", J. Electrical Engineering, Vol.31, pp.346-352 (1988)

46.              Y. K. Su, "The Analysis and Applications of Secondary Ion Mass Spectrometers", Instruments Today, Vol.9, pp.9-20 (1988).

47.              Y. K. Su and T. L. Chen, "High Characteristic Temperature of 1.3 m Crescent Buried Heterojunction Laser Diodes", Bull. Mater. Sci.Vol.11, pp.291-295 (1988).

48.              C. C. Chang, C. C. Wei and Y. K. Su, "Epitaxial Twin Growth of ZnSe on Semi-insulating ZnSe Substrates", J. Mater. Science Lett.Vol.7, pp.1061-1063 (1988).

49.              V. Koren, B. I. Miller and Y. K. Su, "High Power, High Speed 1.3 um Semi-insulating Blocked DFB Laser, J. Appl Phys.Vol.64, pp4785-4790 (1988).

50.              B. D. Liu, Y. K. Su and S. C. Chen, "The Fabrication and Characterization of Ion-Sensitive Field-Effect Transistors with Silicon Nitride Gate", International Journal of Electronics Vol.67, pp.59-63 (1989).

51.              Y. K. Su, J. H. Wang and M. P. Hung, "Preparation and Characterization of InGaAsP Epilayers by Liquid Phase Epitaxy", J. Materials Science, Vol.24, pp.899-905 (1989).

52.              Y. K. Su, M. C. Wu and B. S. Chiu, "The Effect of Lattice Mismatch on the Properties of InGaAs/InP Hetrojunctions", J. Cryst. Growth, Vol.96, pp.47-59 (1989). EI/SCI

53.              Y. K. Su, C. C. Chang and C. C. Wei, "The Growth and Characterization of ZnSe Epilayers Growth by VPE and MOCVD", Progress in Crystal Growth and Characterization, Vol.17, pp.241-263 (1989).

54.              S. C. Chen and Y. K. Su, "Photoluminescence Study of GaSb Growth by Liquid Phase Epilaxy", J. Appl. Phys. Vol.66, pp.350-353 (1989).

55.              F. S. Juang and Y. K. Su, "Electrical Properties of Al/n-GaSb Contact" Solid State Electronics Vol.32, pp.661-664 (1989). EI/SCI

56.              C. S. Lain, J. Y. Lee, L. Harn and Y. K. Su, "Linearly Shift Knapsack Public-Key Crystosystem", IEEE, J. Selected Area on Communications, Vol.7, pp.534-539 (1989).

57.              Y. K. Su, S. C. Chen and F. S. Juang, "Effect of Composition and Growth Conditions on the Properties of AlGaSb Epilayers ", Solid State Electronics Vol.32, pp733-738 (1989). EI/SCI

58.              C. T. Lee, Y. K. Su and S. L. Chen, "Dependence of ZnO Films on Sputtering Parameters and SAW Device on ZnO/InP", J. Crystal Growth Vol.96, pp.785-789 (1989).

59.              M. C. Wu and Y. K. Su, "Liquid-Phase Epilaxial Growth of AlxGa1-xAs with 0<x<0.85", J. Crystal Growth, Vol.96, pp.52-58 (1989).

60.              Y. K. Su, "The Analysis and Applications of Auger Electron Spectrometer (AES)", Instruments Today, Vol.10, pp.63-76 (1989).

61.              Y. K. Su, C. C. Chang, C. C. Wei and F. J. Huang, "Low Resistivity of ZnSe Epilayers on GaAs Substrates by Closed Tube Method", Chinese J.Materials Science, Vol.21, No.2, pp. 122-126 (1989).

62.              Y. K. Su, C. R. Huang and Y. C. Chou, "Low-Temperature Growth of SiO2/InP Structure Prepared by Photo-CVD", Jpn. J. Appl. Phys., Vol.28, pp.1664-1668 (1989). EI

63.              Y. K. Su and S. L. Chen, "Effect of RF Sputtering Parameters on ZnO Films Deposited onto InP Substrates", Proceedings of SPIE-The International Society for Optical Engineering, Vol.1125, pp.21-25 (1989).

64.              Y. K. Su, C. C. Chang, C. C. Wei and F.J. Hwang, "The Effect of Growth Time and Thickness on the Electrical Properties of ZnSe Epilayers on GaAs Substrates", Thin Solid Films, Vol.182, pp.53-62 (1989).

65.              C. R. Huang and Y. K. Su, "Research of SiO2/InP Structure Prepared by Photo-CVD", J. Electron. Materials, Vol.19, pp.753-756 (1990).

66.              Y. K. Su, N. Y. Li, F. S. Juang, and S. C. Wu, "The Effect of Annealing Temperature on Electrical Properties of Pd/n-GaSb Schottky Contacts", J. Appl. Phys. Vol. 68, No.15, pp.646-648 (1990).

67.              C. J. Huang and Y. K. Su, "Effect of Substrate Temperature on the Properties of SiO2/InP Structure Prepared by Photo-Chemical Vapor Deposition" J. Appl. Phys. Vol. 67, pp.3350-3353 (1990).

68.              F. S. Juang, and Y. K. Su, "Growth and Properties of GaSb, GaInSb and AlGaSb Epilayer by MOCVD", Progress in Crystal Growth and Characterization Vol.20, pp.285-312 (1990).

69.              C. H. Chen and Y. K. Su, "Fabrication of InP-Based NnpnN Heterojunction Bipolar Transistor", J. Appl Phys. 78, pp.826-829 (1990).

70.              F. S. Juang, Y. K. Su, N. Y. Li and K. J. Gan, "Effects of TMSb/TEGa Ratios on Epilayer Properties of Gallium Antimonide Grown by Low Pressure MOCVD", J. Appl. Phys. Vol.68, pp.6383-6387 (1990).

71.              R. L. Wang, Y. K. Su, Y.H. Wang and T. C. Wang, "Negative Differential Resistance of a Delta-Doping Induced Double-Barrier Quantum Well Diode at Room Temperature", IEEE Electron Device Letters, Vol. 11, pp.428-430 (1990).

72.              Y. K. Su and F. S. Juang, "Growth and Characterization of GaSb Epilayers by Liquid Phase Epitaxy", J. Materials Science, Vol.25, pp.843-847 (1990).

73.              Y. K. Su, K. J. Gan, J. S. Hwang and S. L. Tyan, "Raman Spectra of Si-Implanted GaSb", J. Appl. Phys. Vol.68, pp.5584-5587 (1990).

74.              N.Y. Li and Y. K. Su, "GaSb/ GaAs Heteroepitaxial Growth by Metal Organic Chemical Vapor Deposition and the Study of Schottky Diodes", J. Electrical Engineering, Vol.33, pp.343-359 (1990).

75.              Y. K. Su, Y. C. Chou, H. L. Tsang and S. C. Hsu, "The Fabrication and Study of GaAs Optical Waveguides", J. Electrical Engineering, Vol.33, pp.315-326 (1990).

76.              R. L. Wang, Y. K. Su and Y. H. Wang, "A Novel GaAs Delta-Doping Induced Triangle-Like Double-Barrier Tunneling Diode", Solid State Electronics Vol.34, pp.223-224 (1990). EI/SCI

77.              Y. K. Su, N. Y. Li and F.S. Juang, "Electrical Properties of Pd/n-GaSb Schottky Contacts" Solid State Electronics, Vol.34, pp.426-428 (1990). EI/SCI

78.              S. M. Chen, H. Y. Ueng and Y. K. Su, "The Characterization of GaAs/Si Grown by MBE", Instruments Today, Vol. 11, No.6, pp.74-87 (1990).

79.              F. S. Juang, Y. K. Su and N. Y. Li, "Undoped GaSb Grown on the Structure of InGaAs/GaAs Strain Layer Superlattice by MOCVD", Jpn. J. Appl. Phys. Vol.30, pp.12-16 (1991). EI

80.              Y. K. Su, C. J. Huang, R. L. Leu and F. M. Pan, "Compositional and Electrical Properties of InSb MOS Structure" Solid State Electronics, Vol.34, pp.107-109 (1991). EI/SCI

81.              Y. K. Su, K. J. Gan, F. S. Juang and J. S. Hwang, "Characterization of Si-Implanted Gallium Arsenide", Nuclear Instruments and Methods in Physics Research B55, pp.794-797 (1991).

82.              S. C. Chen, Y. K Su and C. Z. Lee, "The Fabrication and Study of InGaAsP/InP Double-Collector Heterjunction Bipolar Transistors", Solid State Electronics, Vol.34, No.7, pp.787-794 (1991). EI/SCI

83.              Y. K. Su, F. S. Juang, N. Y. Li, K. J. Gan and T. S. Wu, "Heteroepitaxial Growth of Gallium Antimonide on GaAs by Low Pressure MOVPE", Solid State Electronics Vol.34, No.8, pp.815-819 (1991). EI/SCI

84.              Y. K. Su, F. S. Juang and K. J. Gan, "Ohmic Contacts of AuGeNi and Ag/AuGeNi to n-GaSb with Various Sintering Temperature", Jpn. J. Appl. Phys. Vol.30, No.5 (1991). EI

85.              Y. K. Su, F. S. Juang and T. S. Wu, "Influence of Growth Temperature Upon the In Solid Composition in InGaSb Epilayers Grown by MOCVD", J. Appl. Phys. Vol.70, pp.1421-1424 (1991).

86.              F. S. Juang, Y. K. Su and T. S. Wu, "Relationship between Solid and Vapor phase Compositions for InGaSb Epilayers Grown by MOCVD", Solid State Electronics, Vol 34, pp.1225-1229 (1991). EI/SCI

87.              Y. K. Su, F. S. Juang and T. S. Wu, "The Variation of InGaSb Solid Composition with the Vapor Mole Fractions at Different Growth Pressure in MOCVD", Jpn. J. Appl. Phys. Vol.30, No.8 August, pp.1609-1612 (1991). EI

88.              C. C. Chang, Y. K. Su, C. C. Wei, S. S. Chou and S. H. Yang, "A Study of the Growth Rate of ZnSe Epilayer on GaAs Substrate Using Vapor Phase Epilaxy", J. Chinese Institute of Engineers, Vol. 14, pp.289-294 (1991).

89.              J. W. Li, Y. K. Su and Yokoyama, "Thin-Film Electroluminescent Devices", Journal of the Vacuum Science, Vol. 4, pp.10-18 (1991).

90.              J. S. Hwang, S. L. Tyan, M. J. Lin and Y. K. Su, "Studies of Interband Transitions and Thermal Annealing Effects on Ion-Implanted (100) GaAs by Photoreflectance and Raman Spectra", Solid State Communication, Vol. 80, pp.891-896 (1991).

91.              S. C. HSu, Y. K. Su and I. C. Juang, "The Reactive Ion Etching Using for III-V Compound Semiconductor and Its Application", Journal of the Vacuum Society of the R.O.C., Vol.4, pp.15-26 (1991).

92.              Y. K. Su, R.LWang and Y.H.Wang, "Negative Differential Resistance in GaAs Delta-Doping Tunneling Diods", Jpn. J. Appl. Phys, Vol. 30, No.2B, pp. L292-294 (1991). EI

93.              C.J.Huang, Y. K. Su and R. L. Leu, "Studies of InSb MOS Structure Fabricated by Photo-CVD Using Si2H6 and N2O", J. Appl. Phy., Vol.69, pp.2335-2340 (1991).

94.              C.J. Huang, Y. K. Su and R.L. Leu, "Studies of InSb MOS Structure Fabricated by Photo-CVD Using Si2H6 and N2O", J. Appl. Phys Vol.69, pp.2335-2338 (1991).

95.              Y. K. Su and F. S. Juang, "The Effects of Growth Pressure and Substrate Temperature Upon InGaSb layer Quality Grown by MOCVD", J. the Electrochemical Society, Vol. 139, pp.629-632 (1992).

96.              S. C. Cheng, Y. K. Su and C. Z. Lee, "Collector-Emitter Offset Voltage in Single and Double Base InGaAs (P)/InP Heterojunction Bipolar Transistor, Solid State Electronics, Vol.35, pp.553-560 (1992). EI/SCI

97.              Y. K. Su, R. L. Wang, C. H. Su and H. H. Tsai, "The Current-Voltage Characteristic of a Delta-Doped Triple Barrier Switch", Jpn. J. Appl. Phys. Vol.31, pp.30-34 (1992). EI

98.              C. T. Hsu, J. W. Li, C. Liu, Y. K. Su, T. S. Wu and M. Yokoyama, "High Luminous Efficiency Thin Film Electroluminescent Devices with Low Resistivity Insulating Materials", J. Appl. Phys. Vol.71, pp.1509-1512 (1992).

99.              Y. K. Su, F. S. Juang and C. H. Su, "Photoluminescence in Strained GaSb/InGaSb Quantum Wells by Metalorganic Chemical Vapor Deposition", J. Appl. Phys. Vol.1, pp.1368-1372 (1992).

100.          S. C. Chen, Y. K. Su and C. Z. Lee, "A Study of Current Transport in PN Heterojunction", Solid State Electronics, Vol.35, No.9, pp.1311-1323 (1992). EI/SCI

101.          C. H. Su, Y. K. Su and F. S. Juang, "GaSb/InGaSb Strained Layer Quantum Wells by MOCVD", Solid State Electronics, Vol.35, No.10, pp.1385-1390 (1992). EI/SCI

102.          J. W. Li, Y. K. Su and M. Yokoyama, "The Constructions and Optical Characterisctics of Multi-color or Full-color ACTFEL Display Devices", J. Electronic Materials, Vol.21, pp. 659-665 (1992).

103.          C. T. HSu, Y. K. Su and M. Yokoyama, "High Dielectric Constant of RF- Sputtered HfO2 Thin Films", Jpn. J. App. Phys. Vol.31, pp.2501-2504 (1992).

104.          H. H. Tsai, Y. K. Su and R. L. Wang, "The Switching Characteristics in Sawtooth Type Superlattice with Asymmertic Doping ", Chinese J. Materials Science, Vol.24, No.1 (1992).

105.          C. T. Lin, Y. K. Su and C. R. Tuan, "SiO2 Film Deposition and Principles Prepared by Direct Photo-Chemical Vapor Deposition", Instruments Today Vol.66, pp.87-92 (1992).

106.          Y. K. Su, S. C. Hsu and Y. Z. Juang, "Application and Introduction for Reaction Ion Etching", Instruments Today, Vol.13, pp. 92-103 (1992).

107.          Y. K. Su, S. C. Shei and C. H. Chen, "Low-Frequency Noise in InP-Based NnPnN Double Heterojunction Bipolar Transistors", Appl. Phys. Lett.Vol.61, pp.1576-1579 (1992).

108.          C. T. Hsu, Y. J. Lin, Y. K. Su and M. Yokoyhama, "Crystallinity of ZnS: Tb, F Thin Films and Characteristics of Green-Color Thin-Film Electroluminescent Devices Prepared by rf- Magnetron Sputtering", J. Appl. Phys. Vol.72, pp.4655-4659 (1992).

109.          C. T. Hsu, Y. J. Lin, Y. K. Su and M. Yokoyama, "Growth of ZnSe Thin Films on ITO/glass Substrates by Low Pressure MOCVD", J. Crystal Growth, Vol.125, pp.420-424 (1992).

110.          C. T. HSu, Y. K. Su, T. S. Wu and M. Yokoyama, "Metalorganic Chemical Vapor Deposition of ZnSe Thin Films on ITO/glass substrate", Appl. Surface Science, 65/66, pp.831-834 (1993).

111.          J. W. Li, Y. K. Su and M. Yokoyama M. Takahashi, T. Nakata, and Y. Hashimoto, "The Crystallinity of ZnS Thin Films Prepared by MOCVD", Appl. Surface Science, Vol. 65/66, pp.433-436 (1993).

112.          Y. J. Lin, Y. K. Su and M. Yokoyama, "Crystallinity of ZnS: Tb, F Thin Films on Green Thin Film Electroluminescent Devices Prepared by RF-Magnetron Sputtering", Appl. Surface Science Vol 65, pp.461-464 (1993).

113.          J. W. Li, Y. K. Su and M. Yokoyama, "Effects of [H2S]/[DMZn] Molar Ratio on ZnS Films Grown by Low Pressure Metalorganic Chemical Vapor Deposition", Jpn. J. Appl. Phys, Vol. 32, No. 2 (1993). EI

114.          Y. K. Su, H. Kuan and P. H. Chang, "Zinc Doping in Gallium Antomonide Grown by Low-Pressure Metalorganic Chemical Vapor Deposition", J. Appl. Phys. Vol. 73, pp.56-59 (1993).

115.          Y. K. Su, H. Kuan and P. H. Chang, "Investigation of Se-doped GaSb Epilayers Grown by Low-Pressure Metal Chemical Vapor Deposition", Solid State Electronic, Vol.36, pp.1773-1778 (1993). EI/SCI

116.          C.T. Hsu, Y. J. Lin, Y. K. Su and M. Yokoyama, "Effects of Insulating Layers and Active Layer on ZnS: TbOF Thin Film Electroluminescent Devices", Jpn. J. Appl. Phys., Vol.32, pp.1983-1986 (1993). EI

117.          C. T. HSu, Y. K. Su and M. Yokoyama, "Electroluminescent Devices with Different Insulator/Semiconductor Interfaces Prepared by RF-Sputtering", Journal Optical Engineering. Vol.32, pp.1803-1808 (1993).

118.          Y. K. Su and S.M. Chen, "Energy levels of GaSb Grown by Metalorganic Chemical Vapor Deposition ", J. Appl. Phys. Vol.73, No.12, pp.8349-8352 (1993).

119.          Y. K. Su, Y. Z. Juang, S. C. Shei and B. C. Fang, "A Study of Selective and Nonselective Reactive Ion Etching of GaAs/AlGaAs Materials", Solid State Electronics. Vol 36, pp.1779-1785 (1993). EI/SCI

120.          S. M. Chen, Y. K. Su and Y. T. Lu, "Two-mode InGaSb/GaSb Strained-layer Superlattice, Infrared Photodetector", IEEE Electron Device Lett., Vol.14, pp.447-449(1993).

121.          Y. K. Su, R. L. Wang and H. H. Tsai, "Delta-Doping Interband Tunneling Diode by Metal-Organic Chemical Vapor Deposition", IEEE Trans. Electron Device, Vol.40, pp.2192-2198 (1993).

122.          Y. K. Su, and H. H. Tsai, "Deltta-Doping Technology and Related Devices Fabrication", Part (1) Device Fabrication, Instruments Today, Vol.14, pp.68-77 (1993).

123.          Y. K. Su, and H. H. Tsai, "Deltta-Doping Technology and Related Devices Fabrication", Part (2) Device Fabrication, Instruments Today, Vol.15, pp.92-105 (1993)

124.          S. M. Chen and Y. K. Su, "High Quality Undoped n-type GaSb Epilayer by Low Temperature Metalorganic Chemical Vapor Deposition", J. Appl. Phys. Vol.74, No.4, pp. 2892-2895 (1993).

125.          S. M. Chen, Y. K. Su and Y. T. Lu, "Effects of Elastic Strain on the Band Offset and Effective Mass of Strain InGaSb Epilayers, J. Appl. Phys. Vol. 74 pp.7288-7293 (1993).

126.          J. W. Li, Y. K. Su and M. Yokoyama, "Current Density-Voltage Chatacteristics of AC Thin-Film Electroluminescent Devices with Different Dielectric-Phospher Interfaces", Jpn. J. Appl. Phys. Vol. 32, pp.5591-5595 (1993). EI

127.          Y. K. Su, Y. Z. Juang, S. C. Shei and B. C. Fang, "A Study of Seclective and Nonseclective Ion Etching of GaAs/AlGaAs Material", Solid State Electronic, Vol.36, No.12, pp.1779-1785 (1993). EI/SCI

128.          J. D. Lin, Y. K. Su, S. J. Chang, M. Yokoyama and F. Y. Juang, "Passivation with SiO2 on HgCdTe by direct Photo-CVD", Journal of Vacuum Science & Technology Vol 12, pp. 7-11 (1994).

129.          Y. Z. Juang, Y. K. Su, S. C. Shei and B. C. Fang, "Comparing Reactive Ion Etching of III-V Compound in C12/BC13/Ar and CC12/BC13/Ar Discharges", J. Vacuum Science and Technology, Vol. 12, No.1, pp. 75-82 (1994).

130.          C. T. HSu, Y. K. Su, T. S. Wu and M. Yokoyama, "Electric Field Effect on ZnSe Thin Films Prepared by MOCVD", Jpn. J. Appl. Phys.Vol.33, pp.161-163 (1994). EI

131.          C. T. HSu, Y. K. Su, T. S.Wu and M. Yokoyama, "Electric Fieleld Effect on ZnSe Thin Films Prepared by MOCVD", Jpn.J.Appl.Phys.Vol.33, pp.161-163 (1994).

132.          Y. K. Su, C. L. Lin, Y. K. Chyn and S. M. Chen, "Characterization of InAs/GaSb Type II Superlattices Grown by metal Organic Chemical Vapor Deposition ", J. of the Chinese Institute of Engineers. (1994).

133.          C. T. Lin, Y. K. Su, S. J. Chang and M. Yokoyama, "Passivation with SiO2 on HgCdTe by Direct Photo-CVD", J. Vac. Sci. Technol. A Vol.12, p.7-11 (1994). EI

134.          C. Y. Hwang, J. E. Moris and Y. K. Su, "New Method of Modeling a Multi-Peak Resonant Tunneling Diodes", Electronics Lett., Vol.30, pp.1012-1013 (1994).

135.          H. H. Tsai, Y. K. Su, H. H. Lin and R. L. Wang, "P-N Double Quantum Well Resonant Interband Tunneling Diode with Peak-to-Valley Current Ratio of 144 at Room Temperature ", IEEE Electron Devices Lett., Vol. 15, pp. 357-359 (1994).

136.          G. C. Chi, Y. K. Su, M. J. Jou and W. C. Huang, "Window Layer for Current Spreading in AlGaInP Light-Emitting Diode ", J. Appl. Phys. Vol.76, pp.2603-2611 (1994).

137.          J. W. Lee, Y. K. Su and M. Yokoyama, "ZnS Thin Film Prepared by Low Pressure Metalorganic Chemical Vappor Diposition", Jpn. J. Appl. Phys. Vol. 33, pp.4723-4726 (1994). EI

138.          J. W. Li, J. D. Chiang, Y. K. Su and M. Yokoyama, "The Preparation of ZnS Film on ITO/Glass Substrate by Low-Pressure Metalorganic Chemical Vapor Deposition", J. Cryst. Growth, Vol.131, pp.421-426 (1994). EI/SCI

139.          Y. K. Su and U. H. Lian, "Study of InSb Metal-Oxide-Semiconductor Structure Prepared by Direct Photo-Chemical Vapor Deposition", J. Appl. Phys. Vol. 76, pp.4719-4723 (1994).

140.          J. W. Li, S. H. Su, M. Yokoyama and Y. K. Su, " Characteristics of Indium-Tin Oxide Thin Film Etched by Reactive Ion Etching," Jpn. J. Appl. Phys, Vol. 33, pp. 6562-6565, (1994). EI

141.          S. J. Chang, Y. K. Su and Y. P. Shei, "High Quality ZnO Thin Films on InP Substrates Prepared by RF Magnetron Sputtering (I)- Material Study", Journal of Vacuum Science Technology Vol. 13, pp.381-384 (1994).

142.          Y. K. Su and U. H. Liaw, “Study of indium antimonide metal-oxide-semiconductor structure prepared by direct photo-chemical vapor deposition”, Journal of Applied Physics, Vol. 76, No. 8, pp.4719-4723, (1994).

143.          Yang, C. C., Huang, K. C., Su, Y. K., and Wang, R. L., "The study of GaAs/InGaAs delta-doping resonant interband tunneling diode," Materials Science and Engineering B-Solid State Materials for Advanced Technology, vol. 35, no. 1-3, pp. 259-262, 1995.

144.          Su, Y. K., Kuan, H., Wu, T. S., Huang, Y. S., and Lin, F. C., "Temperature dependence in InxGa1-xAs/GaAs double quantum well by contactless electroreflectance spectroscopy," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 34, no. 12A, pp. 6334-6339, 1995.

145.          Chen, S. M., Su, Y. K., and Lu, Y. T., "Doping effects on intersubband and interband optical transitions in GaSb-InAs superlattices," Ieee Journal of Quantum Electronics, vol. 32, no. 2, pp. 277-283, 1996.

146.          Su, Y. K., Lin, C. T., Huang, H. T., Chang, S. J., Sun, T. P., Chen, G. S., and Luo, J. J., "Electrical properties of high-quality stacked CdTe photo-enhanced native oxide for HgCdTe passivation," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 35, no. 2B, pp. 1165-1167, 1996.

147.          Lin, C. T., Su, Y. K., Huang, E. T., Chang, S. J., Chen, G. S., Sun, T. P., and Luo, J. J., "Electrical properties of the stacked ZnS/photo-enhanced native oxide passivation for long wavelength HgCdTe photodiodes," Ieee Photonics Technology Letters, vol. 8, no. 5, pp. 676-678, 1996.

148.          Yang, C. C., Huang, K. C., and Su, Y. K., "Multi-peak NDR and high PVCR in GaAs/InGaAs/InAs multi-stepped quantum well resonant interband tunnelling diodes," Electronics Letters, vol. 32, no. 8, pp. 774-775, 1996.

149.          Yang, C. C., Huang, K. C., and Su, Y. K., "High peak-to-valley current ratio GaAs/InGaAs/InAs double stepped quantum well resonant interband tunneling diodes at room temperature," Japanese Journal of Applied Physics Part 2-Letters, vol. 35, no. 5A, pp. L535-L537, 1996.

150.          Kuan, H., Su, Y. K., Wu, T. S., Huang, Y. S., and Chi, W. S., "Electromodulation spectroscopy study of symmetry forbidden transitions in an InxGa1-xAs/GaAs single quantum well grown using a tertiarybutylarsine source," Solid-State Electronics, vol. 39, no. 6, pp. 885-890, 1996.

151.          Liu, C. H., Yokoyama, M., Su, Y. K., and Lee, N. C., "Atomic layer epitaxy of ZnS by low-pressure horizontal metalorganic chemical vapor deposition," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 35, no. 5A, pp. 2749-2753, 1996.

152.          Chang, S. J., Sheu, J. K., Su, Y. K., Jou, M. J., and Chi, G. C., "AlGaInP/GaP light-emitting diodes fabricated by wafer direct bonding technology," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 35, no. 8, pp. 4199-4202, 1996.

153.          Liu, C. H., Yokoyama, M., and Su, Y. K., "Effect of atomic layer epitaxy growth conditions on the properties of ZnS epilayers on (100)-Si substrate," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 35, no. 10, pp. 5416-5420, 1996.

154.          Su, S. H., Tsai, P. R., Yokoyama, M., and Su, Y. K., "Use of di-pi-cyclopentadienyl manganese as a dopant source for ZnS in metallorganic chemical vapor deposition," Journal of the Electrochemical Society, vol. 143, no. 12, pp. 4116-4118, 1996.

155.          Su, Y. K., Liaw, U. H., Sun, T. P., and Chen, G. S., "Origins of 1/f noise in indium antimonide photodiodes," Journal of Applied Physics, vol. 81, no. 2, pp. 739-743, 1997.

156.          Lin, C. T., Su, Y. K., Chang, S. J., Huang, H. T., Chang, S. M., and Sun, T. P., "Effects of passivation and extraction surface trap density on the 1/f noise of HgCdTe photoconductive detector," Ieee Photonics Technology Letters, vol. 9, no. 2, pp. 232-234, 1997.

157.          Chang, S. J., Chang, C. S., Su, Y. K., Chang, P. T., Wu, Y. R., Huang, K. H., and Chen, T. P., "Chirped GaAs-AlAs distributed Bragg reflectors for high brightness yellow-green light-emitting diodes," Ieee Photonics Technology Letters, vol. 9, no. 2, pp. 182-184, 1997.

158.          Li, W. L., Su, Y. K., and Jaw, D. H., "The influences of refractive index dispersion on the modal gain of a quantum-well laser," Ieee Journal of Quantum Electronics, vol. 33, no. 3, pp. 416-423, 1997.

159.          Wang, C. W., Sheu, T. J., Su, Y. K., and Yokoyama, M., "The study of aging mechanism in ZnS:Mn thin-film electroluminescent devices grown by MOCVD," Applied Surface Science, vol. 114 pp. 709-713, 1997.

160.          Kuan, H., Su, Y. K., and Wu, T. S., "Characteristics of InxGa1-xAs/GaAs pseudomorphic modulation doped field effect transistor," Journal of Applied Physics, vol. 81, no. 10, pp. 7048-7052, 1997.

161.          Gan, K. J., Su, Y. K., and Wang, R. L., "Modeling of three-peak current-voltage characteristics with two resonant tunneling diodes connected in series," Journal of Applied Physics, vol. 81, no. 10, pp. 6825-6829, 1997.

162.          Su, Y. K., Lin, C. L., Chen, S. M., Chang, J. R., and Jaw, D. H., "Optical and structural characterization of InAs/GaSb superlattices," Journal of Applied Physics, vol. 81, no. 11, pp. 7529-7532, 1997.

163.          Su, S. H., Yokoyama, M., and Su, Y. K., "9 inch diagonal ZnS and ZnS:Mn films fabricated by metallorganic chemical vapor deposition," Journal of the Electrochemical Society, vol. 144, no. 12, pp. 4310-4313, 1997.

164.          Wang, C. W., Sheu, T. J., Su, Y. K., and Yokoyama, M., "Deep traps and mechanism of brightness degradation in Mn-doped ZnS thin-film electroluminescent devices grown by metal-organic chemical vapor deposition," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 36, no. 5A, pp. 2728-2732, 1997.

165.          Chang, S. J., Chang, C. S., Su, Y. K., Chang, P. T., Wu, Y. R., Huang, K. H., and Chen, T. P., "AlGaInP yellow-green light-emitting diodes with a tensile strain barrier cladding layer," Ieee Photonics Technology Letters, vol. 9, no. 9, pp. 1199-1201, 1997.

166.          Huang, C. Y., Morris, J. E., and Su, Y. K., "Generalized formula for the stability and instability criteria of current-voltage characteristics measurements in the negative differential conductance region of a resonant tunneling diode," Journal of Applied Physics, vol. 82, no. 5, pp. 2690-2696, 1997.

167.          Su, S. H., Yokoyama, M., and Su, Y. K., "Reactive ion etching of ZnS films for thin-film electroluminescent devices," Materials Chemistry and Physics, vol. 50, no. 3, pp. 205-208, 1997.

168.          Li, W. L., Su, Y. K., Chang, S. J., and Tsai, C. Y., "A novel waveguide structure to reduce beam divergence and threshold current in GaInP/AlGaInP visible quantum-well lasers," Applied Physics Letters, vol. 71, no. 16, pp. 2245-2247, 1997.

169.          Hsu, C. T., Yokoyama, M., and Su, Y. K., "Growth of ZnSe/ZnS strained-layer superlattice on Si substrates by atomic layer epitaxy," Materials Chemistry and Physics, vol. 51, no. 2, pp. 102-106, 1997.

170.          Gan, K. J. and Su, Y. K., "Modeling multipeak current-voltage characteristic and hysteresis phenomena for several resonant tunneling diodes connected in series," Journal of Applied Physics, vol. 82, no. 11, pp. 5822-5828, 1997.

171.          Gan, K. J. and Su, Y. K., "Improved circuit design of multipeak current-voltage characteristics based on resonant tunneling diodes," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 36, no. 10, pp. 6280-6284, 1997.

172.          Gan, K. J. and Su, Y. K., "Modeling current-voltage and hysteretic current-voltage characteristics with two resonant tunneling diodes connected in series," Solid-State Electronics, vol. 41, no. 12, pp. 1917-1922, 1997.

173.          Chang, C. S., Su, Y. K., Chang, S. J., Chang, P. T., Wu, Y. R., Huang, K. H., and Chen, T. P., "High-brightness AlGaInP 573-nm light-emitting diode with a chirped multiquantum barrier," Ieee Journal of Quantum Electronics, vol. 34, no. 1, pp. 77-83, 1998.

174.          Kuo, C. W. and Su, Y. K., "Photoreflectance and C-V measurement investigations of dry etched gate recesses for GaInP/InGaAs/GaAs pseudomorphic high electron mobility transistors (HEMTs) using BCl3/Ar plasma," Japanese Journal of Applied Physics Part 2-Letters, vol. 36, no. 12B, pp. L1651-L1653, 1997.

175.          Tu, R. C., Su, Y. K., Lin, D. Y., Huang, Y. S., Lan, W. H., Tu, S. L., Chang, S. J., Chou, S. C., and Chou, W. C., "Contactless electroreflectance study of strained Zn0.79Cd0.21Se/ZnSe double quantum wells," Journal of Applied Physics, vol. 83, no. 2, pp. 1043-1048, 1998.

176.          Tu, R. C., Su, Y. K., Li, C. F., Huang, Y. S., Chou, S. T., Lan, W. H., Tu, S. L., and Chang, H., "Near-band-edge optical properties of molecular beam epitaxy grown ZnSe epilayers on GaAs by modulation spectroscopy," Journal of Applied Physics, vol. 83, no. 3, pp. 1664-1669, 1998.

177.          Gan, K. J., Su, Y. K., and Wang, R. L., "Simulation and analysis of negative differential resistance devices and circuits by load-line method and PSpice," Solid-State Electronics, vol. 42, no. 1, pp. 176-180, 1998.

178.          Li, W. L., Su, Y. K., Chang, S. J., Chang, C. S., and Tsai, C. Y., "Design of AlGaInP visible lasers with a low vertical divergence angle," Solid-State Electronics, vol. 42, no. 1, pp. 87-90, 1998.

179.          Gan, K. J. and Su, Y. K., "Novel multipeak current-voltage characteristics of series-connected negative differential resistance devices," Ieee Electron Device Letters, vol. 19, no. 4, pp. 109-111, 1998.

180.          Su, Y. K., Li, W. L., Chang, S. J., Chang, C. S., and Tsai, C. Y., "High-performance 670-nm AlGaInP/GaInP visible strained quantum well lasers," Ieee Transactions on Electron Devices, vol. 45, no. 4, pp. 763-767, 1998.

181.          Wang, C. W., Liao, J. Y., Su, Y. K., and Yokoyama, M., "The relation between luminous properties and oxygen content in ZnS : TbOF thin-film electroluminescent devices fabricated by radio-frequency magnetron sputtering method," Ieee Transactions on Electron Devices, vol. 45, no. 4, pp. 757-762, 1998.

182.          Sheu, J. K., Su, Y. K., Chi, G. C., Chen, W. C., Chen, C. Y., Huang, C. N., Hong, J. M., Yu, Y. C., Wang, C. W., and Lin, E. K., "The effect of thermal annealing on the Ni/Au contact of p-type GaN," Journal of Applied Physics, vol. 83, no. 6, pp. 3172-3175, 1998.

183.          Lo, I., Chen, S. J., Lee, Y. C., Tu, L. W., Mitchel, W. C., Ahoujja, M., Perrin, R. E., Tu, R. C., Su, Y. K., Lan, W. H., and Tu, S. L., "Negative persistent photoconductivity in II-VI ZnS1-xSex/Zn1-yCdySe quantum wells," Physical Review B, vol. 57, no. 12, pp. R6819-R6822, 1998.

184.          Chang, S. J., Chang, C. S., Su, Y. K., Chang, P. T., Wu, Y. R., Huang, K. H., and Chen, T. P., "AlGaInP multiquantum well light-emitting diodes," Iee Proceedings-Optoelectronics, vol. 144, no. 6, pp. 405-409, 1997.

185.          Chen, H. J., Lin, D. Y., Huang, Y. S., Tu, R. C., Su, Y. K., and Tiong, K. K., "Optical characterization of a Zn0.88Mg0.12S0.18Se0.82 epilayer on GaAs," Chinese Journal of Physics, vol. 36, no. 3, pp. 533-541, 1998.

186.          Kuo, C. W., Su, Y. K., and Kuan, H., "BCl3/Ar plasma-induced surface damage in GaInP/InGaAs/GaInP quantum-well high-electron-mobility transistors," Japanese Journal of Applied Physics Part 2-Letters & Express Letters, vol. 37, no. 6B, pp. L706-L708, 1998.

187.          Juang, Y. Z., Su, Y. K., Chang, S. J., Huang, D. F., and Chang, S. C., "Reactive ion etching for AlGaInP/GaInP laser structures," Journal of Vacuum Science & Technology A-Vacuum Surfaces and Films, vol. 16, no. 4, pp. 2031-2036, 1998.

188.          Sheu, J. K., Su, Y. K., Chi, G. C., Jou, M. J., and Chang, C. M., "Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN," Applied Physics Letters, vol. 72, no. 25, pp. 3317-3319, 1998.

189.          Tu, R. C., Su, Y. K., Chen, H. J., Huang, Y. S., and Chou, S. T., "Contactless electroreflectance and piezoreflectance studies of temperature-dependent strain in ZnTe/GaAs heterostructures with ZnSe/ZnTe superlattice buffer layers," Applied Physics Letters, vol. 72, no. 24, pp. 3184-3186, 1998.

190.          Chou, W. C., Yang, C. S., Chu, A. H. M., Yeh, A. J., Ro, C. S., Lan, W. H., Tu, S. L., Tu, R. C., Chou, S. C., and Su, Y. K., "Optical properties of ZnSe1-xSx epilayers grown on misoriented GaAs substrates," Journal of Applied Physics, vol. 84, no. 4, pp. 2245-2250, 1998.

191.          Tu, R. C., Su, Y. K., Chen, H. J., Huang, Y. S., and Chou, S. T., "The structural and optical properties of high quality ZnTe grown on GaAs using ZnSe/ZnTe strained superlattices buffer layer," Journal of Applied Physics, vol. 84, no. 5, pp. 2866-2870, 1998.

192.          Sheu, J. K., Su, Y. K., Chang, S. J., Jou, M. J., Liu, C. C., and Chi, G. C., "Investigation of wafer-bonded (AlxGa1-x)(0.5)In0.5P/GaP light-emitting diodes," Iee Proceedings-Optoelectronics , vol. 145, no. 4, pp. 248-252, 1998.

193.          Su, S. H., Yokoyama, M., and Su, Y. K., "Reactive ion etching of ZnS films using a gas mixture of methane/hydrogen/argon," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 37, no. 4A, pp. 1764-1767, 1998.

194.          Sheu, J. K., Su, Y. K., Chi, G. C., Pong, B. J., Chen, C. Y., Huang, C. N., and Chen, W. C., "Photoluminescence spectroscopy of Mg-doped GaN," Journal of Applied Physics, vol. 84, no. 8, pp. 4590-4594, 1998.

195.          Tu, R. C., Su, Y. K., Huang, Y. S., Chen, G. S., and Chou, S. T., "Structural and optical studies of ZnCdSe/ZnSe/ZnMgSSe separate confinement heterostructures with different buffer layers," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 37, no. 9A, pp. 4732-4736, 1998.

196.          Sheu, J. K., Su, Y. K., Chang, S. J., Chi, G. C., Lin, K. B., Liu, C. C., and Chiu, C. C., "Electrical derivative characteristics of ion-implanted AlGaInP/GaInP multi-quantum well lasers," Solid-State Electronics, vol. 42, no. 10, pp. 1867-1869, 1998.

197.          Tu, R. C., Su, Y. K., Huang, Y. S., and Chou, S. T., "The annealing effects on ZnCdSe/ZnSe quantum wells and ZnSe/GaAs interfaces," Journal of Applied Physics, vol. 84, no. 11, pp. 6017-6022, 1998.

198.          Kuo, C. W., Su, Y. K., Lin, H. H., and Tsia, C. Y., "Study and application of reactive ion etching on GaInP/InGaAs/GaInP quantum-well HEMTs," Solid-State Electronics, vol. 42, no. 11, pp. 1933-1937, 1998.

199.          Tu, R. C., Su, Y. K., and Chou, S. T., "Photoluminescence properties of Zn1-xMgxSe on misoriented GaAs substrates by molecular beam epitaxy," Journal of Applied Physics, vol. 84, no. 12, pp. 6877-6880, 1998.

200.          Kuo, C. W., Su, Y. K., Lin, H. H., and Chin, C. Y., "BCl3/Ar reactive ion etching for gate recessing of GaInP/InGaAs/GaAs pseudomorphic high electron mobility transistors," Journal of Vacuum Science & Technology B, vol. 16, no. 6, pp. 3003-3007, 1998.

201.          Chen, H. J., Lin, D. Y., Huang, Y. S., Tu, R. C., Su, Y. K., and Tiong, K. K., "Temperature dependence of the band-edge exciton of a Zn0.88Mg0.12S0.18Se0.82 epilayer on GaAs," Semiconductor Science and Technology, vol. 14, no. 1, pp. 85-88, 1999.

202.          Lin, C. L., Su, Y. K., Se, T. S., and Li, W. L., "Variety transformation of compound at GaSb surface under sulfur passivation," Japanese Journal of Applied Physics Part 2-Letters, vol. 37, no. 12B, pp. L1543-L1545, 1998.

203.          Sheu, J. K., Su, Y. K., Chi, G. C., Jou, M. J., Liu, C. C., Chang, C. M., and Hung, W. C., "Inductively coupled plasma etching of GaN using Cl-2/Ar and Cl-2/N-2 gases," Journal of Applied Physics, vol. 85, no. 3, pp. 1970-1974, 1999.

204.          Chang, J. R., Su, Y. K., Lu, Y. T., Jaw, D. H., Shiao, H. P., and Lin, W., "Determination of the valence-band offset for GaInAsSb/InP heterostructure," Applied Physics Letters, vol. 74, no. 5, pp. 717-719, 1999.

205.          Tu, R. C., Su, Y. K., and Chou, S. T., "Effects of thermal annealing on photoluminescence and structural properties of (ZnSe)(2)(CdSe)(n) short-period-superlattices multiple quantum wells," Journal of Applied Physics, vol. 85, no. 4, pp. 2398-2401, 1999.

206.          Sheu, J. K., Su, Y. K., Chi, G. C., Koh, P. L., Jou, M. J., Chang, C. M., Liu, C. C., and Hung, W. C., "High-transparency Ni/Au ohmic contact to p-type GaN," Applied Physics Letters, vol. 74, no. 16, pp. 2340-2342, 1999.

207.          Juang, F. S., Su, Y. K., Chang, S. J., Chang, S. M., Shu, F. S., Chiang, C. D., Cherng, Y. T., and Sun, T. P., "Dark currents in HgCdTe photodiodes passivated with ZnS/Cds," Journal of the Electrochemical Society, vol. 146, no. 4, pp. 1540-1545, 1999.

208.          Su, Y. K., Juang, F. S., Chang, S. M., Chiang, C. D., and Cherng, Y. T., "1/f noise and specific detectivity of HgCdTe photodiodes passivated with ZnS-CdS films," Ieee Journal of Quantum Electronics, vol. 35, no. 5, pp. 751-756, 1999.

209.          Tu, R. C., Su, Y. K., Lan, W. H., and Chien, F. R., "Structural and optical studies of ZnCdSe/ZnSe/ZnMgSSe separate confinement heterostructures with different buffer layers grown by molecular beam epitaxy," Journal of Crystal Growth, vol. 202 pp. 961-964, 1999.

210.          Tu, R. C., Su, Y. K., Huang, Y. S., and Chien, F. R., "Structural and optical properties of high-quality ZnTe grown on GaAs using ZnSe ZnTe strained-layer superlattices buffer layer," Journal of Crystal Growth, vol. 202 pp. 506-509, 1999.

211.          Chang, J. R., Su, Y. K., Lin, C. L., Wu, K. M., Lu, Y. T., Jaw, D. H., Shiao, H. P., and Lin, W., "High conduction-band offset of AlInAsSb InGaAs multiple quantum wells grown by metalorganic vapor phase epitaxy," Applied Physics Letters, vol. 74, no. 23, pp. 3495-3497, 1999.

212.          Chang, J. R., Su, Y. K., Jaw, D. H., Shiao, H. P., and Lin, W., "Metalorganic vapor phase epitaxy (MOVPE) growth and characterization of AlInAsSb and AlInAsSb InGaAs multiple-quantum-well structures,"  Journal of Crystal Growth, vol. 203, no. 4, pp. 481-485, 1999.

213.          Chang, J. R., Su, Y. K., Lin, C. L., Wu, K. M., Huang, W. C., Lu, Y. T., Jaw, D. H., Li, W. L., and Chen, S. M., "Measurement of AlInAsSb GaInAsSb heterojunction band offset by photoluminescence spectroscopy," Applied Physics Letters, vol. 75, no. 2, pp. 238-240, 1999.

214.          Chang, S. J., Chen, W. R., Su, Y. K., Tu, R. C., Lan, W. H., and Chang, H., "Ohmic contact to p-ZnSe and p-ZnMgSSe," Electronics Letters, vol. 35, no. 15, pp. 1280-1281, 1999.

215.          Wang, C. W., Liao, J. Y., Chen, C. L., Lin, W. K., Su, Y. K., and Yokoyama, M., "Effect of rapid thermal annealing on radio-frequency magnetron-sputtered GaN thin films and Au/GaN Schottky diodes," Journal of Vacuum Science & Technology B, vol. 17, no. 4, pp. 1545-1548, 1999.

216.          Chang, J. R., Su, Y. K., Lin, C. L., Jaw, D. H., and Lin, W., "GaInAsSb/InP multiple-quantum-well structure grown by metalorganic vapor-phase epitaxy," Journal of Crystal Growth, vol. 206, no. 4, pp. 263-266, 1999.

217.          Lo, I., Chen, S. J., Tu, L. W., Mitchel, W. C., Tu, R. C., and Su, Y. K., "Effect of electron-electron interactions on a two-dimensional electron gas in II-VIZnS0.06Se0.94/Zn0.8Cd0.2Se quantum wells,"  Physical Review B, vol. 60, no. 16, pp. R11281-R11284, 1999.

218.          Chang, J. R., Su, Y. K., and Lu, Y. T., "GaInAsSb/InP heterojunction band offset: Measurement by absorption spectroscopy," Journal of Applied Physics, vol. 86, no. 12, pp. 6908-6910, 1999.

219.          Sheu, J. K., Su, Y. K., Chi, G. C., Jou, M. J., Liu, C. C., and Chang, C. M., "Indium tin oxide ohmic contact to highly doped n-GaN," Solid-State Electronics, vol. 43, no. 11, pp. 2081-2084, 1999.

220.          Chang, S. J., Chen, W. R., Su, Y. K., Chen, J. F., Lan, W. H., Lin, A. C. H., and Chang, H., "Formation of local p(+) region in ZnSe by Cu3Ge contact," Electronics Letters, vol. 35, no. 25, pp. 2231-2232, 1999.

221.          Juang, F. S., Su, Y. K., Chang, S. M., Chang, S. J., Chiang, C. D., and Cherng, Y. T., "Analysis of the dark current of focal-plane-array Hg1-xCdxTe diode," Materials Chemistry and Physics, vol. 64, no. 2, pp. 131-136, 2000.

222.          Su, Y. K., Chang, J. R., Lu, Y. T., Lin, C. L., Wu, K. M., and Wu, Z. X., "Novel AlInAsSb/InGaAs double-barrier resonant tunneling diode with high peak-to-valley current ratio at room temperature," Ieee Electron Device Letters, vol. 21, no. 4, pp. 146-148, 2000.

223.          Su, Y. K., Chang, J. R., Lu, Y. T., Lin, C. L., and Wu, K. M., "Novel AlInAsSb/InGaAs heterostructure for double-barrier resonant tunneling diode," Ieee Transactions on Electron Devices, vol. 47, no. 4, pp. 895-897, 2000.

224.          Sheu, J. K., Su, Y. K., Chi, G. C., Jou, M. J., Liu, C. C., Chang, C. M., Hung, W. C., Bow, J. S., and Yu, Y. C., "Investigation of the mechanism for Ti/Al ohmic contact on etched n-GaN surfaces," Journal of Vacuum Science & Technology B, vol. 18, no. 2, pp. 729-732, 2000.

225.          Chang, S. J., Su, Y. K., Juang, F. S., Lin, C. T., Chiang, C. D., and Cherng, Y. T., "Photo-enhanced native oxidation process for Hg0.8Cd0.2Te photoconductors," Ieee Journal of Quantum Electronics, vol. 36, no. 5, pp. 583-589, 2000.

226.          Sheu, J. K., Chi, G. C., Su, Y. K., Liu, C. C., Chang, C. M., Hung, W. C., and Jou, M. J., "Luminescence of an InGaN/GaN multiple quantum well light-emitting diode," Solid-State Electronics, vol. 44, no. 6, pp. 1055-1058, 2000.

227.          Su, Y. K., Chi, G. C., and Sheu, J. K., "Optical properties in InGaN/GaN multiple quantum wells and blue LEDs," Optical Materials, vol. 14, no. 3, pp. 205-209, 2000.

228.          Su, Y. K., Chen, W. R., Chang, S. J., Juang, F. S., Lan, W. H., Lin, A. C. H., and Chang, H., "The red shift of ZnSSe metal-semiconductor-metal light emitting diodes with high injection currents," Ieee Transactions on Electron Devices, vol. 47, no. 7, pp. 1330-1333, 2000.

229.          Ramaiah, K. S., Raja, V. S., Bhatnagar, A. K., Tomlinson, R. D., Pilkington, R. D., Hill, A. E., Chang, S. J., Su, Y. K., and Juang, F. S., "Optical, structural and electrical properties of tin doped indium oxide thin films prepared by spray-pyrolysis technique," Semiconductor Science and Technology, vol. 15, no. 7, pp. 676-683, 2000.

230.          Chen, W. R., Chang, S. J., Su, Y. K., Lan, W. H., Lin, A. C. H., and Chang, H., "Reactive ion etching of ZnSe, ZnSSe, ZnCdSe and ZnMgSSe by H-2/Ar and CH4/H-2/Ar," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 39, no. 6A, pp. 3308-3313, 2000.

231.          Lin, C. L., Su, Y. K., Chang, J. R., Chen, S. M., Li, W. L., and Jaw, D. H., "Temperature dependence of barrier height and energy bandgap in Au/n-GaSb Schottky diode," Japanese Journal of Applied Physics Part 2-Letters, vol. 39, no. 5A, pp. L400-L401, 2000.

232.          Ramaiah, K. S., Raja, V. S., Bhatnagar, A. K., Juang, F. S., Chang, S. J., and Su, Y. K., "Effect of annealing and gamma-irradiation on the properties of CuInSe2 thin films," Materials Letters, vol. 45, no. 5, pp. 251-261, 2000.

233.          Wang, C. W., Soong, B. S., Chen, J. Y., Chen, C. L., and Su, Y. K., "Effects of gamma-ray irradiation on the microstructural and luminescent properties of radio-frequency magnetron-sputtered GaN thin films," Journal of Applied Physics, vol. 88, no. 11, pp. 6355-6358, 2000.

234.          Ramaiah, K. S., Su, Y. K., Chang, S. J., Juang, F. S., and Chen, C. H., "Photoluminescence characteristics of Mg- and Si-doped GaN thin films grown by MOCVD technique," Journal of Crystal Growth, vol. 220, no. 4, pp. 405-412, 2000.

235.          Chang, S. J., Su, Y. K., Tsai, T. L., Chang, C. Y., Chiang, C. L., Chang, C. S., Chen, T. P., and Huang, K. H., "Acceptor activation of Mg-doped GaN by microwave treatment," Applied Physics Letters, vol. 78, no. 3, pp. 312-313, 2001.

236.          Chang, S. J., Chen, W. R., Su, Y. K., Chen, J. F., Lan, W. H., Chiang, C. I., Lin, W. J., Cherng, Y. T., and Liu, C. H., "Au/AuBe/Cr contact to p-ZnTe," Electronics Letters, vol. 37, no. 5, pp. 321-322, 2001.

237.          Saha, S. K., Su, Y. K., Juang, F. S., and Yokoyama, M., "Temperature-dependent electroluminescence in poly [2-methoxy-5(2 '-ethylhexyloxy)-p-phenylenevinylene light-emitting diode," Journal of Applied Physics, vol. 89, no. 7, pp. 4019-4022, 2001.

238.          Ramaiah, K. S., Su, Y. K., Chang, S. J., Juang, F. S., Ohdaira, K., Shiraki, Y., Liu, H. P., Chen, I. G., and Bhatnagar, A. K., "Characterization of Cu doped CdSe thin films grown by vacuum evaporation," Journal of Crystal Growth, vol. 224, no. 1-2, pp. 74-82, 2001.

239.          Saha, S. K., Su, Y. K., and Juang, E. S., "Temperature dependence of electroluminescence in a Tris-(8-hydroxy) quinoline aluminum (Alq3) light emitting diode," Ieee Journal of Quantum Electronics, vol. 37, no. 6, pp. 807-812, 2001.

240.          Saha, S. K., Su, Y. K., and Juang, F. S., "Temperature- and field-dependent quantum efficiency in tris-(8-hydroxy) quinoline aluminum light-emitting diodes," Journal of Applied Physics, vol. 89, no. 12, pp. 8175-8178, 2001.

241.          Chang, S. J., Su, Y. K., Chen, J. F., Wen, L. F., and Huang, B. R., "Effects of electron effective mass on the multiquantum barrier structure in AlGaInP laser diodes," Iee Proceedings-Optoelectronics, vol. 148, no. 2, pp. 117-120, 2001.

242.          Chen, C. H., Chang, S. J., Su, Y. K., Chi, G. C., Chi, J. Y., Chang, C. A., Sheu, J. K., and Chen, J. F., "GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts," Ieee Photonics Technology Letters, vol. 13, no. 8, pp. 848-850, 2001.

243.          Su, Y. K., Chiou, Y. Z., Juang, F. S., Chang, S. J., and Sheu, J. K., "GaN and InGaN metal-semiconductor-metal photodetectors with different Schottky contact metals," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 40, no. 4B, pp. 2996-2999, 2001.

244.          Sheu, J. K., Tsai, J. M., Shei, S. C., Lai, W. C., Wen, T. C., Kou, C. H., Su, Y. K., Chang, S. J., and Chi, G. C., "Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer," Ieee Electron Device Letters, vol. 22, no. 10, pp. 460-462, 2001.

245.          Lo, I., Lee, K. H., Tu, L. W., Tsai, J. K., Mitchel, W. C., Tu, R. C., and Su, Y. K., "Thermal effect on quantum confinement in ZnS0.06Se0.94/Zn0.8Cd0.2Se quantum wells," Solid State Communications, vol. 120, no. 4, pp. 155-160, 2001.

246.          Chang, S. J., Su, Y. K., Chen, W. R., Chen, J. F., Lan, W. H., Lin, W. J., Cherng, Y. T., Liu, C. H., and Liaw, U. H., "ZnSTeSe metal-semiconductor-metal photodetectors," Ieee Photonics Technology Letters, vol. 14, no. 2, pp. 188-190, 2002.

247.          Sheu, J. K., Tun, C. J., Tsai, M. S., Lee, C. C., Chi, G. C., Chang, S. J., and Su, Y. K., "n(+)-GaN formed by Si implantation into p-GaN," Journal of Applied Physics, vol. 91, no. 4, pp. 1845-1848, 2002.

248.          Chang, S. J., Su, Y. K., Chen, W. R., Chen, J. F., Chen, M. H., Juang, F. S., Lan, W. H., Lin, W. J., Cherng, Y. T., Liu, C. H., and Liaw, U. H., "ZnMgSSe metal-semiconductor-metal visible-blind photodetectors with transparent indium-tin-oxide contact electrodes," Japanese Journal of Applied Physics Part 2-Letters, vol. 41, no. 2A, pp. L115-L117, 2002.

249.          Kuo, C. H., Chang, S. J., Su, Y. K., Wu, L. W., Sheu, J. K., Chen, C. H., and Chi, G. C., "Low temperature activation of Mg-doped GaN in O-2 ambient," Japanese Journal of Applied Physics Part 2-Letters, vol. 41, no. 2A, pp. L112-L114, 2002.

250.          Chen, C. H., Su, Y. K., Chang, S. J., Chi, G. C., Sheu, J. K., Chen, J. F., Liu, C. H., and Liaw, Y. H., "High brightness green light emitting diodes with charge asymmetric resonance tunneling structure," Ieee Electron Device Letters, vol. 23, no. 3, pp. 130-132, 2002.

251.          Sheu, J. K., Pan, C. J., Chi, G. C., Kuo, C. H., Wu, L. W., Chen, C. H., Chang, S. J., and Su, Y. K., "White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer," Ieee Photonics Technology Letters, vol. 14, no. 4, pp. 450-452, 2002.

252.          Liu, J. W., Su, Y. K., Liu, C. F., and Chen, J. B., "Nosocomial blood-stream infection in patients with end-stage renal disease: excess length of hospital stay, extra cost and attributable mortality,"  Journal of Hospital Infection, vol. 50, no. 3, pp. 224-227, 2002.

253.          Kuo, C. H., Chang, S. J., Su, Y. K., Chen, J. F., Wu, L. W., Sheu, J. K., Chen, C. H., and Chi, G. C., "InGaN/GaN light emitting diodes activated in O-2 ambient," Ieee Electron Device Letters, vol. 23, no. 5, pp. 240-242, 2002.

254.          Wu, L. W., Chang, S. J., Wen, T. C., Su, Y. K., Chen, J. F., Lai, W. C., Kuo, C. H., Chen, C. H., and Sheu, J. K., "Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes," Ieee Journal of Quantum Electronics, vol. 38, no. 5, pp. 446-450, 2002.

255.          Chen, C. H., Chang, S. J., Su, Y. K., Chi, G. C., Sheu, J. K., and Chen, J. F., "High-efficiency InGaN-GaN MQW green light-emitting diodes with CART and DBR structures," Ieee Journal of Selected Topics in Quantum Electronics, vol. 8, no. 2, pp. 284-288, 2002.

256.          Chang, S. J., Lai, W. C., Su, Y. K., Chen, J. F., Liu, C. H., and Liaw, U. H., "InGaN-GaN multiquantum-well blue and green light-emitting diodes," Ieee Journal of Selected Topics in Quantum Electronics, vol. 8, no. 2, pp. 278-283, 2002.

257.          Ko, C. H., Su, Y. K., Chang, S. J., Kuan, T. M., Chiang, C. I., Lan, W. H., Lin, W. J., and Webb, J., "P-down InGaN/GaN multiple quantum wells light-emitting diode structure grown by metal-organic vapor-phase epitaxy," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 41, no. 4B, pp. 2489-2492, 2002.

258.          Wen, T. C., Chang, S. J., Wu, L. W., Su, Y. K., Lai, W. C., Kuo, C. H., Chen, C. H., Sheu, J. K., and Chen, J. F., "InGaN/GaN tunnel-injection blue light-emitting diodes," Ieee Transactions on Electron Devices, vol. 49, no. 6, pp. 1093-1095, 2002.

259.          Chen, C. H., Chang, S. J., Su, Y. K., Sheu, J. K., Chen, J. F., Kuo, C. H., and Lin, Y. C., "Nitride-based cascade near white light-emitting diodes," Ieee Photonics Technology Letters, vol. 14, no. 7, pp. 908-910, 2002.

260.          Ko, C. H., Chang, S. J., Su, Y. K., Lan, W. H., Chen, J. F., Kuan, T. M., Huang, Y. C., Chiang, C. I., Webb, J., and Lin, W. J., "On the carrier concentration and Hall mobility in GaN epilayers," Japanese Journal of Applied Physics Part 2-Letters, vol. 41, no. 3A, pp. L226-L228, 2002.

261.          Chen, W. R., Chang, S. J., Su, Y. K., Chen, J. F., Lan, W. H., Lin, W. J., Cherng, Y. T., Liu, C. H., and Liaw, U. H., "ZnCdSeTe-based orange light-emitting diode," Ieee Photonics Technology Letters, vol. 14, no. 8, pp. 1061-1063, 2002.

262.          Su, Y. K., Chang, S. J., Ko, C. H., Chen, J. F., Kuan, T. M., Lan, W. H., Lin, W. J., Cherng, Y. T., and Webb, J., "InGaN/GaN light emitting diodes with a p-down structure," Ieee Transactions on Electron Devices, vol. 49, no. 8, pp. 1361-1366, 2002.

263.          Su, Y. K., Wu, C. H., Chang, J. R., Wu, K. M., Wang, H. C., Chen, W. B., You, S. J., and Chang, S. J., "Well width dependence for novel AlInAsSb/InGaAs double-barrier resonant tunneling diode," Solid-State Electronics, vol. 46, no. 8, pp. 1109-1111, 2002.

264.          Chiou, Y. Z., Su, Y. K., Chang, S. J., Chen, J. F., Chang, C. S., Liu, S. H., Lin, Y. C., and Chen, C. H., "Transparent TiN electrodes in GaN metal-semiconductor-metal ultraviolet photodetectors," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 41, no. 6A, pp. 3643-3645, 2002.

265.          Lee, K. W., Chou, D. W., Wu, H. R., Huang, J. J., Wang, Y. H., Houng, M. P., Chang, S. J., and Su, Y. K., "GaN MOSFET with liquid phase deposited oxide gate," Electronics Letters, vol. 38, no. 15, pp. 829-830, 2002.

266.          Chou, D. W., Lee, K. W., Huang, J. J., Wu, H. R., Wang, Y. H., Houng, M. P., Chang, S. J., and Su, Y. K., "AlGaN/GaN metal oxide semiconductor heterostructure field-effect transistor based on a liquid phase deposited oxide," Japanese Journal of Applied Physics Part 2-Letters, vol. 41, no. 7A, pp. L748-L750, 2002.

267.          Chang, S. J., Su, Y. K., Yang, T., Chang, C. S., Chen, T. P., and Huang, K. H., "AlGaInP-sapphire glue bonded light-emitting diodes," Ieee Journal of Quantum Electronics, vol. 38, no. 10, pp. 1390-1394, 2002.

268.          Su, Y. K., Zhong, J. C., and Chang, S. J., "A novel vertical-cavity surface-emitting laser with semiconductor/superlattice distributed Bragg reflectors," Ieee Photonics Technology Letters, vol. 14, no. 10, pp. 1388-1390, 2002.

269.          Ko, C. H., Su, Y. K., Chang, S. J., Lan, W. H., Webb, J., Tu, M. C., and Cherng, Y. T., "Photo-enhanced chemical wet etching of GaN," Materials Science and Engineering B-Solid State Materials for Advanced Technology, vol. 96, no. 1, pp. 43-47, 2002.

270.          Chang, S. J., Kuo, C. H., Su, Y. K., Wu, L. W., Sheu, J. K., Wen, T. C., Lai, W. C., Chen, J. F., and Tsai, J. M., "400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes," Ieee Journal of Selected Topics in Quantum Electronics, vol. 8, no. 4, pp. 744-748, 2002.

271.          Wang, H. C., Su, Y. K., Lin, C. L., Chen, W. B., and Chen, S. M., "Improvement of AlInP-AlGaInP MQW light-emitting diode by meshed contact layer," Ieee Photonics Technology Letters, vol. 14, no. 11, pp. 1491-1493, 2002.

272.          Lin, Y. C., Chang, S. J., Su, Y. K., Tsai, T. Y., Chang, C. S., Shei, S. C., Hsu, S. J., Liu, C. H., Liaw, U. H., Chen, S. C., and Huang, B. R., "Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts," Ieee Photonics Technology Letters, vol. 14, no. 12, pp. 1668-1670, 2002.

273.          Sheu, J. K., Lee, M. L., Yeh, L. S., Kao, C. J., Tun, C. J., Chen, M. G., Chi, G. C., Chang, S. J., Su, Y. K., and Lee, C. T., "Planar GaN n(+)-p photodetectors formed by Si implantation into p-GaN," Applied Physics Letters, vol. 81, no. 22, pp. 4263-4265, 2002.

274.          Su, Y. K., Chiou, Y. Z., Chang, C. S., Chang, S. J., Lin, Y. C., and Chen, J. F., "4H-SiC metal-semiconductor-metal ultraviolet photodetectors with Ni/ITO electrodes," Solid-State Electronics, vol. 46, no. 12, pp. 2237-2240, 2002.

275.          Chiou, Y. Z., Su, Y. K., Chang, S. J., Lin, Y. C., Chang, C. S., and Chen, C. H., "InGaN/GaN MQW p-n junction photodetectors," Solid-State Electronics, vol. 46, no. 12, pp. 2227-2229, 2002.

276.          Chen, W. R., Chang, S. J., Su, Y. K., Tsai, T. Y., Chen, J. F., Lan, W. H., Lin, W. J., Cherng, Y. T., Liu, C. H., and Liaw, U. H., "ZnSe epitaxial layers and ZnSSe/ZnSe strain layer superlattices grown by molecular beam epitaxy," Superlattices and Microstructures, vol. 32, no. 1, pp. 59-63, 2002.

277.          Juang, F. S., Su, Y. K., Yu, H. H., and Liu, K. J., "Characterization of the InAsSb/GaSb superlattices by Fourier transform infrared spectroscopy," Materials Chemistry and Physics, vol. 78, no. 3, pp. 620-624, 2003.

278.          Tang, H., Webb, J. B., Rolfe, S., Bardwell, J. A., Tomka, D., Coleridge, P., Ko, C. H., Su, Y. K., and Chang, S. J., "GaN/AlGaN two-dimensional electron gas grown by ammonia-MBE on MOCVD GaN template," Physica Status Solidi B-Basic Research, vol. 234, no. 3, pp. 822-825, 2002.

279.          Sheu, J. K., Chang, S. J., Kuo, C. H., Su, Y. K., Wu, L. W., Lin, Y. C., Lai, W. C., Tsai, J. M., Chi, G. C., and Wu, R. K., "White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors," Ieee Photonics Technology Letters, vol. 15, no. 1, pp. 18-20, 2003.

280.          Ji, L. W., Su, Y. K., Chang, S. J., Wu, L. W., Fang, T. H., Chen, J. F., Tsai, T. Y., Xue, Q. K., and Chen, S. C., "Growth of nanoscale InGaN self-assembled quantum dots," Journal of Crystal Growth, vol. 249, no. 1-2, pp. 144-148, 2003.

281.          Tang, H., Webb, J. B., Coleridge, P., Bardwell, J. A., Ko, C. H., Su, Y. K., and Chang, S. J., "Scattering lifetimes due to interface roughness with large lateral correlation length in AlxGa1-xN/GaN two-dimensional electron gas," Physical Review B, vol. 66, no. 24, 2002.

282.          Chang, S. J., Su, Y. K., Chiou, Y. Z., Chiou, J. R., Huang, B. R., Chang, C. S., and Chen, J. F., "Deposition of SiO2 layers on GaN by photochemical vapor deposition," Journal of the Electrochemical Society, vol. 150, no. 2, pp. C77-C80, 2003.

283.          Wu, H. R., Lee, K. W., Nian, T. B., Chou, D. W., Wu, J. J. H., Wang, Y. H., Houng, M. P., Sze, P. W., Su, Y. K., Chang, S. J., Ho, C. H., Chiang, C. I., Chern, Y. T., Juang, F. S., Wen, T. C., Lee, W. I., and Chyi, J. I., "Liquid phase deposited SiO2 on GaN," Materials Chemistry and Physics, vol. 80, no. 1, pp. 329-333, 2003.

284.          Chiou, Y. Z., Chiou, J. R., Su, Y. K., Chang, S. J., Huang, B. R., Chang, C. S., and Lin, Y. C., "The characteristics of different transparent electrodes on GaN photodetectors," Materials Chemistry and Physics, vol. 80, no. 1, pp. 201-204, 2003.

285.          Lin, Y. C., Chang, S. J., Su, Y. K., Shei, S. C., and Hsu, S. J., "Inductively coupled plasma etching of GaN using Cl-2/He gases," Materials Science and Engineering B-Solid State Materials for Advanced Technology, vol. 98, no. 1, pp. 60-64, 2003.

286.          Su, Y. K., Chang, S. J., Chiou, Y. Z., Tsai, T. Y., Gong, J., Lin, Y. C., Liu, S. H., and Chang, C. S., "Nitride-based multiquantum well p-n junction photodiodes," Solid-State Electronics, vol. 47, no. 5, pp. 879-883, 2003.

287.          Yeh, L. S., Lee, M. L., Sheu, J. K., Chen, M. G., Kao, C. J., Chi, G. C., Chang, S. J., and Su, Y. K., "Visible-blind GaN p-i-n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure," Solid-State Electronics, vol. 47, no. 5, pp. 873-878, 2003.

288.          Lin, Y. C., Chang, S. J., Su, Y. K., Tsai, T. Y., Chang, C. S., Shei, S. C., Kuo, C. W., and Chen, S. C., "InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts," Solid-State Electronics, vol. 47, no. 5, pp. 849-853, 2003.

289.          Lee, M. L., Sheu, J. K., Lai, W. C., Chang, S. J., Su, Y. K., Chen, M. G., Kao, C. J., Chi, G. C., and Tsai, J. M., "GaN Schottky barrier photodetectors with a low-temperature GaN cap layer," Applied Physics Letters, vol. 82, no. 17, pp. 2913-2915, 2003.

290.          Chiou, Y. Z., Su, Y. K., Chang, S. J., Gong, J., Lin, Y. C., Liu, S. H., and Chang, C. S., "High detectivity InGaN-GaN multiquantum well p-n junction photodiodes," Ieee Journal of Quantum Electronics, vol. 39, no. 5, pp. 681-685, 2003.

291.          Kuo, C. H., Chang, S. J., Su, Y. K., Wu, L. W., Chen, J. F., Shen, J. K., and Tsai, J. M., "Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer," Ieee Transactions on Electron Devices, vol. 50, no. 2, pp. 535-537, 2003.

292.          Chang, S. J., Wu, L. W., Su, Y. K., Kuo, C. H., Lai, W. C., Hsu, Y. P., Sheu, J. K., Chen, S. F., and Tsai, J. M., "Si and Zn co-doped InGaN-GaN white light-emitting diodes," Ieee Transactions on Electron Devices, vol. 50, no. 2, pp. 519-521, 2003.

293.          Chiou, Y. Z., Chang, C. S., Chang, S. J., Su, Y. K., Chiou, J. R., Huang, B. R., and Chen, J. F., "Deposition of SiO2 layers on 4H-SiC by photochemical vapor deposition," Journal of Vacuum Science & Technology B, vol. 21, no. 1, pp. 329-331, 2003.

294.          Wei, S. C., Su, Y. K., and Wang, R. L., "Stability of measurement of heterojunction bipolar transistors current-voltage characteristics, with thermal effect," Japanese Journal of Applied Physics Part 2-Letters, vol. 41, no. 12A, pp. L1360-L1362, 2002.

295.          Wen, T. C., Chang, S. J., Su, Y. K., Wu, L. W., Kuo, C. H., Lai, W. C., Sheu, J. K., and Tsai, T. Y., "InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping," Journal of Electronic Materials, vol. 32, no. 5, pp. 419-422, 2003.

296.          Kuo, C. H., Chang, S. J., Su, Y. K., Wu, L. W., Sheu, J. K., Wen, T. C., Lai, W. C., Tsai, J. M., and Chen, S. C., "Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers," Journal of Electronic Materials, vol. 32, no. 5, pp. 415-418, 2003.

297.          Wu, L. W., Chang, S. J., Su, Y. K., Tsai, T. Y., Wen, T. C., Kuo, C. H., Lai, W. C., Sheu, J. K., Tsai, J. M., Chen, S. C., and Huang, B. R., "InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer," Journal of Electronic Materials, vol. 32, no. 5, pp. 411-414, 2003.

298.          Wang, C. K., Chiou, Y. Z., Chang, S. J., Su, Y. K., Huang, B. R., Lin, T. K., and Chen, S. C., "AlGaN/GaN metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition SiO2 gate oxide," Journal of Electronic Materials, vol. 32, no. 5, pp. 407-410, 2003.

299.          Hsu, Y. P., Chang, S. J., Su, Y. K., Chang, C. S., Shei, S. C., Lin, Y. C., Kuo, C. H., Wu, L. W., and Chen, S. C., "InGaN/GaN light-emitting diodes with a reflector at the backside of sapphire substrates," Journal of Electronic Materials, vol. 32, no. 5, pp. 403-406, 2003.

300.          Sheu, J. K., Kao, C. J., Lee, M. L., Lai, W. C., Yeh, L. S., Chi, G. C., Chang, S. J., Su, Y. K., and Tsa, J. M., "Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer," Journal of Electronic Materials, vol. 32, no. 5, pp. 400-402, 2003.

301.          Chiou, Y. Z., Su, Y. K., Chang, S. J., Gong, J., Chang, C. S., and Liu, S. H., "The properties of photo chemical-vapor deposition SiO2 and its application in GaN metal-insulator semiconductor ultraviolet photodetectors," Journal of Electronic Materials, vol. 32, no. 5, pp. 395-399, 2003.

302.          Chang, C. S., Chang, S. J., Su, Y. K., Lin, Y. C., Hsu, Y. P., Shei, S. C., Chen, S. C., Liu, C. H., and Liaw, U. H., "InGaN/GaN light-emitting diodes with ITO p-contact layers prepared by RF sputtering," Semiconductor Science and Technology, vol. 18, no. 4, pp. L21-L23, 2003.

303.          Chen, W. B., Su, Y. K., Su, J. Y., Wu, M. C., Lin, C. L., Wang, H. C., Chen, S. M., and Chen, H. R., "Fabrication of oxide-confined collector-up heterojunction bipolar transistors," Japanese Journal of Applied Physics Part 2-Letters, vol. 42, no. 4B, pp. L417-L418, 2003.

304.          Jaw, D. H., Chang, J. R., and Su, Y. K., "Observation of self-organized superlattice in AlGaInAsSb pentanary alloys," Applied Physics Letters, vol. 82, no. 22, pp. 3883-3885, 2003.

305.          Su, J. Y., Wu, M. C., Chen, W. B., and Su, Y. K., "AlGaInP light-emitting diode with tensile strain barrier reducing layer," Ieee Electron Device Letters, vol. 24, no. 3, pp. 159-161, 2003.

306.          Chang, S. J., Chen, C. H., Su, Y. K., Sheu, J. K., Lai, W. C., Tsai, J. M., Liu, C. H., and Chen, S. C., "Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes," Ieee Electron Device Letters, vol. 24, no. 3, pp. 129-131, 2003.

307.          Kuo, C. H., Sheu, J. K., Chang, S. J., Su, Y. K., Wu, L. W., Tsai, J. M., Liu, C. H., and Wu, R. K., "n-UV plus blue/green/red white light emitting diode lamps," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 42, no. 4B, pp. 2284-2287, 2003.

308.          Chen, C. H., Chang, S. J., and Su, Y. K., "High-indium-content InGaN/GaN multiple-quantum-well light-emitting diodes," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 42, no. 4B, pp. 2281-2283, 2003.

309.          Kuo, C. H., Chang, S. J., Su, Y. K., Wu, L. W., Chen, J. F., Sheu, J. K., and Tsai, J. M., "GaN-based light emitting diodes with si-doped In0.23Ga0.77N/GaN short period superlattice current spreading layer," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 42, no. 4B, pp. 2270-2272, 2003.

310.          Su, Y. K., Juang, F. S., and Chen, M. H., "GaN metal-semiconductor-metal visible-blind photodetectors with transparent indium-tin-oxide contact electrodes," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 42, no. 4B, pp. 2257-2259, 2003.

311.          Liu, C. H., Su, Y. K., Wen, T. C., Chang, S. J., and Chuang, R. W., "Nitride-based green light emitting diodes grown by temperature ramping," Journal of Crystal Growth, vol. 254, no. 3-4, pp. 336-341, 2003.

312.          Wei, S. C., Su, Y. K., Kuan, T., Wang, R. L., Chang, S. J., Ko, C. H., Webb, J. B., and Bardwell, J. A., "Investigations of low-frequency noise of GaN-based heterostructure field-effect transistors," Electronics Letters, vol. 39, no. 11, pp. 877-878, 2003.

313.          Chiou, Y. Z., Su, Y. K., Chang, S. J., and Chen, C. H., "GaN metal-semiconductor interface and its applications in GaN and InGaN metal-semiconductor-metal photodetectors," Iee Proceedings-Optoelectronics, vol. 150, no. 2, pp. 115-118, 2003.

314.          Chang, S. J., Lee, M. L., Sheu, J. K., Lai, W. C., Su, Y. K., Chang, C. S., Kao, C. J., Chi, G. C., and Tsai, J. A., "GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts," Ieee Electron Device Letters, vol. 24, no. 4, pp. 212-214, 2003.

315.          Chen, W. B., Su, Y. K., Lin, L. C., Wang, H. C., Su, J. Y., Wu, M. C., Chen, S. M., and Chen, H. R., "Oxide confined collector-up heterojunction bipolar transistors," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 42, no. 5A, pp. 2612-2614, 2003.

316.          Chang, C. S., Chang, S. J., Su, Y. K., Chiou, Y. Z., Lin, Y. C., Hsu, Y. P., Shei, S. C., Lo, H. M., Ke, J. C., Chen, S. C., and Liu, C. H., "InGaN/GaN light-emitting diodes with rapidly thermal-annealed Ni/ITO p-contacts," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 42, no. 6A, pp. 3324-3327, 2003.

317.          Chang, S. J., Wei, S. C., Su, Y. K., Liu, C. H., Chen, S. C., Liaw, U. H., Tsai, T. Y., and Hsu, T. H., "AlGaN/GaN modulation-doped field-effect transistors with an Mg-doped carrier confinement layer," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 42, no. 6A, pp. 3316-3319, 2003.

318.          Liu, C. H., Su, Y. K., Wu, L. W., Chang, S. J., and Chuang, R. W., "Tunnelling efficiency of n(+)-InGaN/GaN short period superlattice tunnelling contact layer for nitride-based light emitting diodes,"  Semiconductor Science and Technology, vol. 18, no. 6, pp. 545-548, 2003.

319.          Lin, Y. C., Chang, S. J., Su, Y. K., Chang, C. S., Shei, S. C., Ke, J. C., Lo, H. M., Chen, S. C., and Kuo, C. W., "High power nitride based light emitting diodes with Ni/ITO p-type contacts," Solid-State Electronics, vol. 47, no. 9, pp. 1565-1568, 2003.

320.          Chang, S. J., Lin, Y. C., Su, Y. K., Chang, C. S., Wen, T. C., Shei, S. C., Ke, J. C., Kuo, C. W., Chen, S. C., and Liu, C. H., "Nitride-based LEDs fabricated on patterned sapphire substrates," Solid-State Electronics, vol. 47, no. 9, pp. 1539-1542, 2003.

321.          Liu, C. H., Chang, C. S., Chang, S. J., Su, Y. K., Chiou, Y. Z., Liu, S. H., and Huang, B. R., "The characteristics of photo-CVD SiO2 and its application on SiC MIS UV photodetectors," Materials Science and Engineering B-Solid State Materials for Advanced Technology, vol. 100, no. 2, pp. 142-146, 2003.

322.          Su, Y. K., Wang, H. C., Lin, C. L., Chen, W. B., and Chen, S. M., "AlGaInP light emitting diode with a modulation-doped superlattice," Japanese Journal of Applied Physics Part 2-Letters, vol. 42, no. 7A, pp. L751-L753, 2003.

323.          Lee, M. L., Sheu, J. K., Lai, W. C., Su, Y. K., Chang, S. J., Kao, C. J., Tun, C. J., Chen, M. G., Chang, W. H., Chi, G. C., and Tsai, J. M., "Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer," Journal of Applied Physics, vol. 94, no. 3, pp. 1753-1757, 2003.

324.          Wu, L. W., Chang, S. J., Su, Y. K., Chuang, R. W., Wen, T. C., Kuo, C. H., Lai, W. C., Chang, C. S., Tsai, J. M., and Sheu, J. K., "Nitride-based green light-emitting diodes with high temperature GaN barrier layers," Ieee Transactions on Electron Devices, vol. 50, no. 8, pp. 1766-1770, 2003.

325.          Chiou, Y. Z., Chang, S. J., Su, Y. K., Wang, C. K., Lin, T. K., and Huang, B. R., "Photo-CVD SiO2 layers on AlGaN and AlGaN-GaN MOSHFET," Ieee Transactions on Electron Devices, vol. 50, no. 8, pp. 1748-1752, 2003.

326.          Ko, C. H., Su, Y. K., Chang, S. J., Tsai, T. Y., Kuan, T. M., Lan, W. H., Lin, J. C., Lin, W. J., Cherng, Y. T., and Webb, J. B., "Two-step epitaxial lateral overgrowth of GaN," Materials Chemistry and Physics, vol. 82, no. 1, pp. 55-60, 2003.

327.          Ji, L. W., Su, Y. K., Chang, S. J., Wu, L. W., Fang, T. H., Xue, Q. K., Lai, W. C., and Chiou, Y. Z., "A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition," Materials Letters, vol. 57, no. 26-27, pp. 4218-4221, 2003.

328.          Ji, L. W., Su, Y. K., Chang, S. J., Liu, S. H., Wang, C. K., Tsai, S. T., Fang, T. H., Wu, L. W., and Xue, Q. K., "InGaN quantum dot photodetectors," Solid-State Electronics, vol. 47, no. 10, pp. 1753-1756, 2003.

329.          Su, Y. K., Wang, H. C., Lin, C. L., Chen, W. B., and Chen, S. M., "Improvement of AlGaInP light emitting diode by sulfide passivation," Ieee Photonics Technology Letters, vol. 15, no. 10, pp. 1345-1347, 2003.

330.          Su, Y. K., Wei, S. C., Chang, L. S., Wang, R. L., and Wang, C. J., "Thermal resistance variation of HBT with high junction temperature and bias condition," Solid-State Electronics, vol. 47, no. 11, pp. 2113-2116, 2003.

331.          Wu, L. W., Chang, S. J., Su, Y. K., Chuang, R. W., Hsu, Y. P., Kuo, C. H., Lai, W. C., Wen, T. C., Tsai, J. M., and Sheu, J. K., "In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer," Solid-State Electronics, vol. 47, no. 11, pp. 2027-2030, 2003.

332.          Chang, S. J., Kuan, T. M., Ko, C. H., Su, Y. K., Webb, J. B., Bardwell, J. A., Liu, Y., Tang, H., Lin, W. J., Cherng, Y. T., and Lan, W. H., "Nitride-based 2DEG photodetectors with a large AC responsivity," Solid-State Electronics, vol. 47, no. 11, pp. 2023-2026, 2003.

333.          Kuo, C. H., Chang, S. J., Su, Y. K., Wang, C. K., Wu, L. W., Sheu, J. K., Wen, T. C., Lai, W. C., Tsai, J. M., and Lin, C. C., "Nitride-based blue LEDs with GaN/SiN double buffer layers," Solid-State Electronics, vol. 47, no. 11, pp. 2019-2022, 2003.

334.          Su, Y. K., Chen, W. B., Lin, C. L., Wang, H. C., Chen, S. M., and Liang, K. M., "Elimination of burn-in effect in carbon-doped InGaP/GaAs HBTs by hydrogen lateral diffusion," Solid-State Electronics, vol. 47, no. 11, pp. 2011-2014, 2003.

335.          Su, Y. K., Wei, S. C., Wang, R. L., Chang, S. J., Ko, C. H., and Kuan, T. M., "Flicker noise of GaN-based heterostructure field-effect transistors with Si-doped AlGaN carrier injection layer," Ieee Electron Device Letters, vol. 24, no. 10, pp. 622-624, 2003.

336.          Chen, W. B., Su, Y. K., Lin, C. L., Wang, H. C., Chen, S. M., Su, J. Y., and Wu, M. C., "Fabrication of InGaP/Al0.98Ga0.02As/GaAs oxide-confined collector-up heterojunction bipolar transistors," Ieee Electron Device Letters, vol. 24, no. 10, pp. 619-621, 2003.

337.          Kuan, T. M., Chang, S. J., Su, Y. K., Chih-Hsin, K., Webb, J. B., Bardwell, J. A., Liu, Y., Tang, H. P., Lin, W. J., Cherng, Y. T., and Lan, W. H., "High optical-gain AlGaN/GaN 2 dimensional electron gas photodetectors," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 42, no. 9A, pp. 5563-5564, 2003.

338.          Chang, C. S., Chang, S. J., Su, Y. K., Kuo, C. H., Lai, W. C., Lin, Y. C., Hsu, Y. P., Shei, S. C., Tsai, J. M., Lo, H. M., Ke, J. C., and Shen, J. K., "High brightness InGaN green LEDs with an ITO on n(++)-SPS upper contact," Ieee Transactions on Electron Devices, vol. 50, no. 11, pp. 2208-2212, 2003.

339.          Chang, S. J., Chang, C. S., Su, Y. K., Chuang, R. W., Lin, Y. C., Shei, S. C., Lo, H. M., Lin, H. Y., and Ke, J. C., "Highly reliable nitride-based LEDs with SPS plus ITO upper contacts," Ieee Journal of Quantum Electronics, vol. 39, no. 11, pp. 1439-1443, 2003.

340.          Yu, H. C., Chang, S. J., Su, Y. K., Sung, C. P., Lin, Y. W., Yang, H. P., Huang, C. Y., and Wang, J. M., "A simple method for fabrication of high speed vertical cavity surface emitting lasers," Materials Science and Engineering B-Solid State Materials for Advanced Technology, vol. 106, no. 1, pp. 101-104, 2004.

341.          Chen, C. H., Chang, S. J., and Su, Y. K., "High electrostatic discharge protection of InGaN/GaN MQW LEDs by using GaN Schottky diodes," Physica Status Solidi A-Applied Research, vol. 200, no. 1, pp. 91-94, 2003.

342.          Sugita, S., Watari, Y., Yoshizawa, G., Sodesawa, J., Yamamizu, H., Liu, K. T., Su, Y. K., and Horikoshi, Y., "Growth of Be-doped p-type GaN under invariant polarity conditions," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 42, no. 12, pp. 7194-7197, 2003.

343.          Su, J. Y., Chen, W. B., Wu, M. C., Su, Y. K., and Liang, K. M., "High reliability of AlGaInP light-emitting diodes with tensile strain barrier-reducing layer," Ieee Photonics Technology Letters, vol. 16, no. 1, pp. 30-32, 2004.

344.          Chang, S. J., Chen, C. H., Chang, P. C., Su, Y. K., Chen, P. C., Jhou, Y. D., Hung, H., Wang, S. M., and Huang, B. R., "Nitride-based LEDs with p-InGaN capping layer," Ieee Transactions on Electron Devices, vol. 50, no. 12, pp. 2567-2570, 2003.

345.          Su, J. Y., Wang, H. C., Chen, W. B., Chen, S. M., Wu, M. C., Chen, H. H., and Su, Y. K., "Improved 634 nm MQW AlGaInP LEDs performance with novel tensile strain barrier reducing layer," Ieee Transactions on Electron Devices, vol. 50, no. 12, pp. 2388-2392, 2003.

346.          Wang, C. K., Lin, T. K., Chiou, Y. Z., Chang, S. J., Su, Y. K., Kuo, C. H., and Ko, T. K., "High transconductance AlGaN/GaN MOSHFETs with photo-CVD gate oxide," Semiconductor Science and Technology, vol. 18, no. 12, pp. 1033-1036, 2003.

347.          Saha, S. K., Su, Y. K., Lin, C. L., and Jaw, D. W., "Current-voltage characteristics of conducting polypyrrole nanotubes using atomic force microscopy," Nanotechnology, vol. 15, no. 1, pp. 66-69, 2004.

348.          Hsu, Y. P., Chang, S. J., Su, Y. K., Sheu, J. K., Lee, C. T., Wen, T. C., Wu, L. W., Kuo, C. H., Chang, C. S., and Shei, S. C., "Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs," Journal of Crystal Growth, vol. 261, no. 4, pp. 466-470, 2004.

349.          Huang, C. J., Su, Y. K., and Wu, S. L., "The effect of solvent on the etching of ITO electrode," Materials Chemistry and Physics, vol. 84, no. 1, pp. 146-150, 2004.

350.          Su, Y. K., Wu, C. H., Hsu, S. H., Chang, S. J., Chen, W. C., Huang, Y. S., and Hsu, H. P., "Observation of spontaneous ordering in the optoelectronic material GaInNP," Applied Physics Letters , vol. 84, no. 8, pp. 1299-1301, 2004.

351.          Chang, C. S., Chang, S. J., Su, Y. K., Lee, C. T., Lin, Y. C., Lai, W. C., Shei, S. C., Ke, J. C., and Lo, H. M., "Nitride-based LEDs with textured side walls," Ieee Photonics Technology Letters, vol. 16, no. 3, pp. 750-752, 2004.

352.          Liu, K. T., Tezuka, T., Sugita, S., Watari, Y., Horikoshi, Y., Su, Y. K., and Chang, S. J., "Modulated beam growth method for MBE grown GaN layers," Journal of Crystal Growth, vol. 263, no. 1-4, pp. 400-405, 2004.

353.          Ji, L. W., Su, Y. K., Chang, S. T., Chang, C. S., Wu, L. W., Lai, W. C., Du, X. L., and Chen, H., "InGaN/GaN multi-quantum dot light-emitting diodes," Journal of Crystal Growth, vol. 263, no. 1-4, pp. 114-118, 2004.

354.          Ji, L. W., Su, Y. K., Chang, S. J., Fang, T. H., Wen, T. C., and Hung, S. C., "Growth of ultra small self-assembled InGaN nanotips," Journal of Crystal Growth, vol. 263, no. 1-4, pp. 63-67, 2004.

355.          Su, Y. K., Wu, C. H., Huang, Y. S., Hsu, H. P., Chen, W. C., Hsu, S. H., and Chang, S. J., "Piezoreflectance and contactless electroreflectance spectra of an optoelectronic material: GaInNP grown on GaAs substrates," Journal of Crystal Growth, vol. 264, no. 1-3, pp. 357-362, 2004.

356.          Wang, X. H., Fan, X. W., Shan, C. X., Zhang, Z. Z., Su, W., Zhang, J. Y., Su, Y. K., Chang, S. J., Lu, Y. M., Liu, Y. C., and Shen, D. Z., "Growth of ZnSe films on ZnO-Si templates," Materials Science and Engineering B-Solid State Materials for Advanced Technology, vol. 107, no. 1, pp. 84-88, 2004.

357.          Ji, L. W., Su, Y. K., Chang, S. J., Hung, S. C., Wang, C. K., Fang, T. H., Tsai, T. Y., Chuang, R., Su, W., and Zhong, J. C., "InGaN metal-semiconductor-metal photodiodes with nanostructures," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 43, no. 2, pp. 518-521, 2004.

358.          Su, Y. K., Chang, S. J., Ji, L. W., Chang, C. S., Wu, L. W., Lai, W. C., Fang, T. H., and Lam, K. T., "InGaN/GaN blue light-emitting diodes with self-assembled quantum dots," Semiconductor Science and Technology, vol. 19, no. 3, pp. 389-392, 2004.

359.          Chang, S. J., Chang, C. S., Su, Y. K., Chuang, R. W., Lai, W. C., Kuo, C. H., Hsu, Y. P., Lin, Y. C., Shei, S. C., Lo, H. M., Ke, J. C., and Sheu, J. K., "Nitride-based LEDs with an SPS Tunneling contact layer and an ITO transparent contact," Ieee Photonics Technology Letters, vol. 16, no. 4, pp. 1002-1004, 2004.

360.          Ramaiah, K. S., Su, Y. K., Chang, S. J., Kerr, B., Liu, H. P., and Chen, I. G., "Characterization of InGaN/GaN multi-quantum-well blue-light-emitting diodes grown by metal organic chemical vapor deposition," Applied Physics Letters, vol. 84, no. 17, pp. 3307-3309, 2004.

361.          Su, Y. K., Wu, C. H., and Chang, J. R., "Thermal annealing effect on the photoluminescence properties of unstrained GaInAsSb/InP single quantum well grown by MOVPE," Materials Chemistry and Physics, vol. 85, no. 2-3, pp. 263-265, 2004.

362.          Chang, S. J., Wu, L. W., Su, Y. K., Hsu, Y. P., Lai, W. C., Tsai, J. A., Sheu, J. K., and Lee, C. T., "Nitride-based LEDs with 800 degrees C grown p-AllnGaN-GaN double-cap layers," Ieee Photonics Technology Letters, vol. 16, no. 6, pp. 1447-1449, 2004.

363.          Liu, C. C., Chen, Y. H., Houng, M. P., Wang, Y. H., Su, Y. K., Chen, W. B., and Chen, S. M., "Improved light-output power of GaN LEDs by selective region activation," Ieee Photonics Technology Letters, vol. 16, no. 6, pp. 1444-1446, 2004.

364.          Chang, P. C., Chen, C. H., Chang, S. J., Su, Y. K., Chen, P. C., Jhou, Y. D., Liu, C. H., Hung, H., and Wang, S. M., "InGaN/GaN multi-quantum well metal-insulator semiconductor photodetectors with photo-CVD SiO2 layers," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 43, no. 4B, pp. 2008-2010, 2004.

365.          Wang, H. C., Su, Y. K., Lin, C. L., Chen, W. B., and Chen, S. M., "InGaN/GaN light emitting diodes with a lateral current blocking structure," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 43, no. 4B, pp. 2006-2007, 2004.

366.          Yu, H. C., Chang, S. J., Su, Y. K., Sung, C. P., Yang, H. P., Huang, C. Y., Lin, Y. W., Wang, J. M., La, F. I., and Kuo, H. C., "Improvement of high-speed oxide-confined vertical-cavity surface-emitting lasers," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 43, no. 4B, pp. 1947-1950, 2004.

367.          Wang, H. C., Su, Y. K., Lin, C. L., Chen, W. B., Chen, S. M., and Li, W. L., "Improvement of AlGaInP multiple-quantum-well light-emitting diodes by modification of ohmic contact layer," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers , vol. 43, no. 4B, pp. 1934-1936, 2004.

368.          Wu, C. H., Su, Y. K., Wei, S. C., Chang, S. J., Sio, C. C., and Chen, W. C., "Reduction in turn-on voltage in GaInNAs and InGaAs-based double-heterojunction bipolar transistors," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 43, no. 4B, pp. 1919-1921, 2004.

369.          Liu, C. H., Wang, C. K., Chang, S. J., and Su, Y. K., "High transconductance nitride MOSHFETs," Materials Science and Engineering B-Solid State Materials for Advanced Technology, vol. 110, no. 1, pp. 32-33, 2004.

370.          Liu, K. T., Tezuka, T., Sugita, S., Watari, Y., Horikoshi, Y., Su, Y. K., and Chang, S. J., "High quality GaN epitaxial layers grown by modulated beam growth method," Materials Chemistry and Physics, vol. 86, no. 1, pp. 161-164, 2004.

371.          Su, Y. K., Chang, S. J., Kuan, T. M., Ko, C. H., Webb, J. B., Lan, W. H., Cherng, Y. T., and Chen, S. C., "Nitride-based HFETs with carrier confinement layers," Materials Science and Engineering B-Solid State Materials for Advanced Technology, vol. 110, no. 2, pp. 172-176, 2004.

372.          Chen, C. H., Chang, S. J., and Su, Y. K., "InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer," Journal of Vacuum Science & Technology A, vol. 22, no. 3, pp. 1020-1022, 2004.

373.          Ji, L. W., Su, Y. K., Chang, S. J., Tsai, S. I., Hung, S. C., Chuang, R. W., Fang, T. H., and Tsai, T. Y., "Growth of InGaN self-assembled quantum dots and their application to photodiodes," Journal of Vacuum Science & Technology A, vol. 22, no. 3, pp. 792-795, 2004.

374.          Su, Y. K., Chang, S. J., Kuan, T. M., Ko, C. H., Webb, J. B., Lan, W. H., Cherng, Y. T., and Chen, S. C., "Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching," Materials Science and Engineering B-Solid State Materials for Advanced Technology, vol. 110, no. 3, pp. 260-264, 2004.

375.          Su, Y. K., Yu, H. C., Chang, S. J., Lee, C. T., Wang, J. S., Kovsh, A. R., Wu, Y. T., Lin, K. F., and Huang, C. Y., "1.3 mu m InAs quantum dot resonant cavity light emitting diodes," Materials Science and Engineering B-Solid State Materials for Advanced Technology, vol. 110, no. 3, pp. 256-259, 2004.

376.          Ramaiah, K. S., Su, Y. K., Chang, S. J., Chen, C. H., Juang, F. S., Liu, H. P., and Chen, I. G., "Studies of InGaN/GaN multiquantum-well green-light-emitting diodes grown by metalorganic chemical vapor deposition," Applied Physics Letters, vol. 85, no. 3, pp. 401-403, 2004.

377.          Wu, C. H., Su, Y. K., Chang, S. J., Huang, Y. S., and Hsu, H. P., "Device characteristics of GaAs-based heterojunction bipolar transistors using an InGaAs/GaAsP strain-compensated layer as a base material," Semiconductor Science and Technology, vol. 19, no. 7, pp. 828-832, 2004.

378.          Liu, C. H., Chuang, R. W., Chang, S. J., Su, Y. K., Kuo, C. H., Tsai, J. M., and Lin, C. C., "InGaN/GaN MQW blue LEDs with GaN/SiN double buffer layers," Materials Science and Engineering B-Solid State Materials for Advanced Technology, vol. 111, no. 2-3, pp. 214-217, 2004.

379.          Wang, C. K., Chang, S. J., Su, Y. K., Chang, C. S., Chiou, Y. Z., Kuo, C. H., Lin, T. K., Ko, T. K., and Tang, J. J., "GaN MSM photodetectors with TiW transparent electrodes," Materials Science and Engineering B-Solid State Materials for Advanced Technology, vol. 112, no. 1, pp. 25-29, 2004.

380.          Liu, C. H., Chuang, R. W., Chang, S. J., Su, Y. K., Wu, L. W., and Lin, C. C., "Improved light output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough surface," Materials Science and Engineering B-Solid State Materials for Advanced Technology, vol. 112, no. 1, pp. 10-13, 2004.

381.          Lee, M. L., Sheu, J. K., Su, Y. K., Chang, S. J., Lai, W. C., and Chi, G. C., "Reduction of dark current in AlGaN-GaN Schottky-barrier photodetectors with a low-temperature-grown GaN cap layer," Ieee Electron Device Letters, vol. 25, no. 9, pp. 593-595, 2004.

382.          Hsu, H. P., Huang, Y. S., Wu, C. H., Su, Y. K., Juang, F. S., Hong, Y. G., and Tu, C. W., "The structural and optical characterization of a new class of dilute nitride compound semiconductors: GaInNP,"  Journal of Physics-Condensed Matter, vol. 16, no. 31, pp. S3245-S3256, 2004.

383.          Lin, C. H., Su, Y. K., Juang, Y. Z., Chuang, R. W., Chang, S. J., Chen, J. E., and Tu, C. H., "The effect of geometry on the noise characterization of SiGeHBTs and optimized device sizes for the design of low-noise amplifiers," Ieee Transactions on Microwave Theory and Techniques, vol. 52, no. 9, pp. 2153-2162, 2004.

384.          Wang, X. H., Fan, X. W., Shan, C. X., Zhang, Z. Z., Zhang, J. Y., Lu, Y. M., Liu, Y. C., Shen, D. Z., Su, Y. K., and Chang, S. J., "MOVPE growth of ZnSe films on ZnO/Si templates," Materials Chemistry and Physics, vol. 88, no. 1, pp. 102-105, 2004.

385.          Liu, K. T., Su, Y. K., Chang, S. J., Onomitsu, K., and Horikoshi, Y., "Photoluminescence and Raman scattering in Mg and P co-implanted GaN epitaxial layers," Physica Status Solidi B-Basic Research, vol. 241, no. 12, pp. 2693-2697, 2004.

386.          Chen, W. B., Su, Y. K., Lin, C. L., Wang, H. C., Yu, H. C., Chen, S. M., and Su, J. Y., "Simulation and fabrication of InGaP/Al0.98Ga0.02As/GaAs oxide-confined collector-up heterojunction bipolar transistors," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 43, no. 8A, pp. 5174-5177, 2004.

387.          Chen, L. Y., Chen, W. H., Wang, J. J., Hong, F. C. N., and Su, Y. K., "Hydrogen-doped high conductivity ZnO films deposited by radio-frequency magnetron sputtering," Applied Physics Letters, vol. 85, no. 23, pp. 5628-5630, 2004.

388.          Chang, P. C., Chen, C. H., Chang, S. J., Su, Y. K., Yu, C. L., Chen, P. C., and Wang, C. H., "AlGaN/GaN MSM photodetectors with photo-CVD annealed Ni/Au semi-transparent contacts," Semiconductor Science and Technology, vol. 19, no. 12, pp. 1354-1357, 2004.

389.          Ji, L. W., Su, Y. K., Chang, S. J., Hung, S. C., Chang, C. S., and Wu, L. W., "Nitride-based light-emitting diodes with InGaN/GaN SAQD active layers," Iee Proceedings-Circuits Devices and Systems, vol. 151, no. 5, pp. 486-488, 2004.

390.          Hsu, S. H., Su, Y. K., Chang, S. J., Lin, K. I., Lan, W. H., Wu, P. S., and Wu, C. H., "Temperature dependence of the optical properties on GaInNP," Journal of Crystal Growth, vol. 272, no. 1-4, pp. 765-771, 2004.

391.          Kuan, T. M., Chang, S. J., Su, Y. K., Lin, J. C., Wei, S. C., Wang, C. K., Huang, C. I., Lan, W. H., Bardwell, J. A., Tang, H., Lin, W. J., and Cherng, Y. T., "High-performance GaN/InGaN heterostructure FETs on Mg-doped GaN current blocking layers," Journal of Crystal Growth, vol. 272, no. 1-4, pp. 300-304, 2004.

392.          Lin, T. K., Chang, S. J., Su, Y. K., Chiou, Y. Z., Wang, C. K., Chang, C. M., and Huang, B. R., "ZnSe homoepitaxial MSM photodetectors with transparent ITO contact electrodes," Ieee Transactions on Electron Devices, vol. 52, no. 1, pp. 121-123, 2005.

393.          Wang, H. C., Su, Y. K., Chung, Y. H., Lin, C. L., Chen, W. B., and Chen, S. M., "AlGaInP light emitting diode with a current-blocking structure," Solid-State Electronics, vol. 49, no. 1, pp. 37-41, 2005.

394.          Su, Y. K., Chang, P. C., Chen, C. H., Chang, S. J., Yu, C. L., Lee, C. T., Lee, H. Y., Gong, J., Chen, P. C., and Wang, C. H., "Nitride-based MSM UV photodetectors with photo-chemical annealing Schottky contacts," Solid-State Electronics, vol. 49, no. 3, pp. 459-463, 2005.

395.          Wang, S. M., Chen, C. H., Chang, S. J., Su, Y. K., and Huang, B. R., "Mg-doped GaN activated with Ni catalysts," Materials Science and Engineering B-Solid State Materials for Advanced Technology, vol. 117, no. 2, pp. 107-111, 2005.

396.          Yu, C. L., Chen, C. H., Chang, S. J., Su, Y. K., Chen, S. C., Chang, P. C., Chen, P. C., Wu, M. H., Chen, H. C., and Su, K. C., "In0.37Ga0.63N metal-semiconductor-metal photodetectors with recessed electrodes," Ieee Photonics Technology Letters, vol. 17, no. 4, pp. 875-877, 2005.

397.          Hung, S. C., Su, Y. K., Chang, S. J., Chen, S. C., Ji, L. W., Fang, T. H., Tu, L. W., and Chen, M., "Self-formation of GaN hollow nanocolumns by inductively coupled plasma etching," Applied Physics A-Materials Science & Processing, vol. 80, no. 8, pp. 1607-1610, 2005.

398.          Chen, W. S., Chang, S. J., Su, Y. K., Wang, R. L., Kuo, C. H., and Shei, S. C., "AlxGa1-xN/GaN heterostructure field effect transistors with various Al mole fractions in AlGaN barrier," Journal of Crystal Growth, vol. 275, no. 3-4, pp. 398-403, 2005.

399.          Hsu, Y. P., Chang, S. J., Su, Y. K., Sheu, J. K., Kuo, C. H., Chang, C. S., and Shei, S. C., "ICP etching of sapphire substrates," Optical Materials, vol. 27, no. 6, pp. 1171-1174, 2005.

400.          Lin, T. K., Chang, S. J., Su, Y. K., Chiou, Y. Z., Wang, C. K., Chang, S. P., Chang, C. M., Tang, J. J., and Huang, B. R., "ZnSe MSM photodetectors prepared on GaAs and ZnSe substrates," Materials Science and Engineering B-Solid State Materials for Advanced Technology, vol. 119, no. 2, pp. 202-205, 2005.

401.          Wang, C. K., Chuang, R. W., Chang, S. J., Su, Y. K., Wei, S. C., Lin, T. K., Ko, T. K., Chiou, Y. Z., and Tang, J. J., "High temperature and high frequency characteristics of AlGaN/GaN MOS-HFETs with photochemical vapor deposition SiO2 layer," Materials Science and Engineering B-Solid State Materials for Advanced Technology, vol. 119, no. 1, pp. 25-28, 2005.

402.          Chang, S. J., Chang, C. S., Su, Y. K., Lee, C. T., Chen, W. S., Shen, C. F., Hsu, Y. P., Shei, S. C., and Lo, H. M., "Nitride-based flip-chip ITO LEDs," Ieee Transactions on Advanced Packaging, vol. 28, no. 2, pp. 273-277, 2005.

403.          Yang, C. Y., Tsai, Y. S., Juang, F. S., Su, Y. K., Lin, D., Chu, C. H., and Chiu, Y. T., "Separately doped structures for red organic light-emitting diodes," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 44, no. 4B, pp. 2833-2836, 2005.

404.          Tu, M. L., Su, Y. K., Chang, S. J., Fang, T. H., Chen, W. H., and Yang, H. L., "Improved performance of 2,3-dibutoxy-1,4-phenylene vinylene based polymer light-emitting diodes by thermal annealing," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 44, no. 4B, pp. 2787-2789, 2005.

405.          Wu, B. T., Su, Y. K., Tu, M. L., Wang, A. C., Chen, Y. S., Chiou, Y. Z., Chiou, Y. T., and Chu, C. H., "Interface modification in organic thin film transistors," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 44, no. 4B, pp. 2783-2786, 2005.

406.          Chang, C. S., Chang, S. J., Su, Y. K., Chen, W. S., Shen, C. F., Shei, S. C., and Lo, H. M., "Nitride based power chip with indium-tin-oxide p-contact and Al back-side reflector," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 44, no. 4B, pp. 2462-2464, 2005.

407.          Wang, C. K., Chang, S. J., Su, Y. K., Chiou, Y. Z., Kuo, C. H., Chang, C. S., Lin, T. K., Ko, T. K., and Tang, J. J., "High temperature performance and low frequency noise characteristics of AlGaN/GaN/AlGaN double heterostructure metal-oxide-semiconductor heterostructure fied-effect-transistors with photochemical vapor deposition SiO2 layer," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 44, no. 4B, pp. 2458-2461, 2005.

408.          Hsu, S. H., Su, Y. K., Chuang, R. W., Chang, S. J., Chen, W. C., and Chen, W. R., "Study of electronic properties by persistent photoconductivity measurement in GaxIn1-xNyAs1-y grown by MOCVD," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 44, no. 4B, pp. 2454-2457, 2005.

409.          Wei, S. C., Su, Y. K., Chang, S. J., Chen, S. M., and Li, W. L., "Nitride-based MQW LEDs with multiple GaN-SiN nucleation layers," Ieee Transactions on Electron Devices, vol. 52, no. 6, pp. 1104-1109, 2005.

410.          Chang, S. J., Wang, C. K., Su, Y. K., Chang, C. S., Lin, T. K., Ko, T. K., and Liu, H. L., "GaN MIS capacitors with Photo-CVD SiNxOy insulating layers," Journal of the Electrochemical Society , vol. 152, no. 6, pp. G423-G426, 2005.

411.          Hou, H. S., Chang, S. J., and Su, Y. K., "Practical passive filter synthesis using genetic programming," Ieice Transactions on Electronics, vol. E88C, no. 6, pp. 1180-1185, 2005.

412.          Chang, S. J., Yu, H. C., Su, Y. K., Chen, I. L., Lee, T. D., Lu, C. M., Chiou, C. H., Lee, Z. H., Yang, H. P., and Sung, C. P., "Highly strained InGaAs oxide confined VCSELs emitting in 1.25 mu m," Materials Science and Engineering B-Solid State Materials for Advanced Technology, vol. 121, no. 1-2, pp. 60-63, 2005.

413.          Ji, L. W., Lam, K. T., Su, Y. K., Kao, Y. K., Diao, C. C., and Liao, F. C., "Raman study of biaxial strain in InGaN-GaN self-assembled quantum dots grown on sapphire (0001)," Compound Semiconductors 2004, Proceedings, vol. 184 pp. 451-454, 2005.

414.          Tsai, C. M., Sheu, J. K., Lai, W. C., Hsu, Y. P., Wang, P. T., Kuo, C. T., Kuo, C. W., Chang, S. J., and Su, Y. K., "Enhanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD," Ieee Electron Device Letters, vol. 26, no. 7, pp. 464-466, 2005.

415.          Hung, S. C., Su, Y. K., Chang, S. J., Chen, S. C., Fang, T. H., and Ji, L. W., "GaN nanocolumns formed by inductively coupled plasmas etching," Physica E-Low-Dimensional Systems & Nanostructures, vol. 28, no. 2, pp. 115-120, 2005.

416.          Su, Y. K., Chang, S. J., Wei, S. C., Chen, S. M., and Li, W. L., "ESD engineering of nitride-based LEDs," Ieee Transactions on Device and Materials Reliability, vol. 5, no. 2, pp. 277-281, 2005.

417.          Wang, C. K., Chang, S. J., Su, Y. K., Chiou, Y. Z., Chang, C. S., Lin, T. K., Liu, H. L., and Tang, J. J., "High detectivity GaN metal-semiconductor-metal UV photodetectors with transparent tungsten electrodes," Semiconductor Science and Technology, vol. 20, no. 6, pp. 485-489, 2005.

418.          Nien, Y. T., Chen, Y. L., Chen, I. G., Hwang, C. S., Su, Y. K., Chang, S. J., and Juang, F. S., "Synthesis of nano-scaled yttrium aluminum garnet phosphor by co-precipitation method with HMDS treatment," Materials Chemistry and Physics, vol. 93, no. 1, pp. 79-83, 2005       

419.          Mahalingam, T., John, V. S., Raja, M., Su, Y. K., and Sebastian, P. J., "Electrodeposition and characterization of transparent ZnO thin films," Solar Energy Materials and Solar Cells, vol. 88, no. 2, pp. 227-235, 2005.

420.          Hsu, Y. P., Chang, S. J., Su, Y. K., Chen, S. C., Tsai, J. M., Lai, W. C., Kuo, C. H., and Chang, C. S., "InGaN-GaN MQW LEDs with Si treatment," Ieee Photonics Technology Letters, vol. 17, no. 8, pp. 1620-1622, 2005.

421.          Lin, T. K., Chang, S. J., Su, Y. K., Huang, B. R., Fujita, M., and Horikoshi, Y., "ZnO MSM photodetectors with Ru contact electrodes," Journal of Crystal Growth, vol. 281, no. 2-4, pp. 513-517, 2005.

422.          Chang, S. J., Wei, S. C., Su, Y. K., Chuang, R. W., Chen, S. M., and Li, W. L., "Nitride-based, LEDs with MQW active region's grown by different temperature profiles," Ieee Photonics Technology Letters, vol. 17, no. 9, pp. 1806-1808, 2005.

423.          Liu, K. T., Su, Y. K., Chuang, R. W., Chang, S. J., and Horikoshi, Y., "C and N co-implantation in Be-doped GaN," Semiconductor Science and Technology, vol. 20, no. 8, pp. 740-744, 2005.

424.          Ko, T. K., Chang, S. J., Su, Y. K., Lee, M. L., Chang, C. S., Lin, Y. C., Shei, S. C., Sheu, J. K., Chen, W. S., and Shen, C. F., "AlGaN-GaN Schottky-barrier photodetectors with LT GaN cap layers," Journal of Crystal Growth, vol. 283, no. 1-2, pp. 68-71, 2005.

425.          Wang, C. K., Ko, T. K., Chang, C. S., Chang, S. J., Su, Y. K., Wen, T. C., Kuo, C. H., and Chiou, Y. Z., "The thickness effect of p-AlGaN blocking layer in UV-A bandpass photodetectors," Ieee Photonics Technology Letters, vol. 17, no. 10, pp. 2161-2163, 2005.

426.          Lee, C. I., Lu, Y. T., Su, Y. K., Chang, S. J., Hwang, J. S., and Chang, C. C., "Optical transitions in a self-assembled ge quantum dot/Si-superlattice measured by photoreflectance spectroscopy," Japanese Journal of Applied Physics Part 2-Letters & Express Letters, vol. 44, no. 33-36, pp. L1045-L1047, 2005.

427.          Jhou, Y. D., Chen, C. H., Chuang, R. W., Chang, S. J., Su, Y. K., Chang, P. C., Chen, P. C., Hung, H., Wang, S. M., and Yu, C. L., "Nitride-based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structures," Solid-State Electronics, vol. 49, no. 8, pp. 1347-1351, 2005.

428.          Liu, K. T., Su, Y. K., Chang, S. J., and Horikoshi, Y., "Magnesium/nitrogen and beryllium/nitrogen coimplantation into GaN," Journal of Applied Physics, vol. 98, no. 7, 2005.

429.          Tu, M. L., Su, Y. K., Lu, W. C., Yang, H. L., Kuo, T. F., and Wen, T. C., "Effect of post annealing on performance of polymer light-emitting devices," Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, vol. 44, no. 10, pp. 7482-7484, 2005.

430.          Hung, S. C., Su, Y. K., Fang, T. H., Chang, S. J., and Ji, L. W., "Buckling instabilities in GaN nanotubes under uniaxial compression," Nanotechnology, vol. 16, no. 10, pp. 2203-2208, 2005.

431.          Huang, C. J., Su, Y. K., Chen, K. L., and Lai, M. Y., "Characteristics of copper indium diselenide thin films formed on flexible substrates by electrodeposition," Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, vol. 44, no. 11, pp. 7795-7800, 2005.

432.          Su, Y. K., Chang, S. J., Wei, S. C., Chuang, R. W., Chen, S. M., and Li, W. L., "Nitride-based LEDs with n(-)-GaN current spreading layers," Ieee Electron Device Letters, vol. 26, no. 12, pp. 891-893, 2005.

433.          Hung, S. C., Su, Y. K., Chang, S. J., Ji, L. W., Shen, D. S., and Huang, C. H., "InGaN/GaN MQD p-n junction photodiodes," Physica E-Low-Dimensional Systems & Nanostructures, vol. 30, no. 1-2, pp. 13-16, 2005.

434.          Lin, J. C., Su, Y. K., Chang, S. J., Chen, W. R., Chen, R. Y., Cheng, Y. C., and Lin, W. J., "Activation energy of n-GaN epitaxial layers grown on vicinal-cut sapphire substrates," Journal of Crystal Growth, vol. 285, no. 4, pp. 481-485, 2005.

435.          Wang, C. K., Chang, S. J., Su, Y. K., Chiou, Y. Z., Chen, S. C., Chang, C. S., Lin, T. K., Liu, H. L., and Tang, J. J., "GaN MSM UV photodetectors with titanium tungsten transparent electrodes," Ieee Transactions on Electron Devices, vol. 53, no. 1, pp. 38-42, 2006.  SCI  IF= 2.105

436.          Chen, W. S., Shei, S. C., Chang, S. J., Su, Y. K., Lai, W. C., Kuo, C. H., Lin, Y. C., Chang, C. S., Ko, T. K., Hsu, Y. P., and Shen, C. F., "Rapid thermal annealed InGaN/GaN flip-chip LEDs," Ieee Transactions on Electron Devices, vol. 53, no. 1, pp. 32-37, 2006.  SCI  IF=2.105

437.          Hou, H. S., Chang, S. J., and Su, Y. K., "Tolerance design of passive filter circuits using genetic programming," Ieice Transactions on Electronics, vol. E88C, no. 12, pp. 2388-2390, 2005.  SCI  IF=0.479

438.          Ji, L. W., Fang, T. H., Hung, S. C., Su, Y. K., Chang, S. J., and Chuang, R. W., "Ultra small self-organized nitride nanotips," Journal of Vacuum Science & Technology B, vol. 23, no. 6, pp. 2496-2498, 2005.  SCI  IF=1.626

439.          Su, Y. K., Hou, H. S., and Chang, S. J., "Practical impedance matching using genetic programming," Microwave and Optical Technology Letters, vol. 48, no. 2, pp. 375-377, 2006.  SCI  IF=0.467

440.          Chen, J. F., Hsiao, R. S., Hung, W. K., Wang, J. S., Chi, J. Y., Yu, H. C., and Su, Y. K., "Evolution of conduction and interface states of laterally wet-oxidized AlGaAs with oxidation time," Journal of Applied Physics, v 99, n 2, Jan 15, 2006, p 023711.  SCI  IF=2.498

441.          Chang, P. C., Chen, C. H., Chang, S. J., Su, Y. K., Yu, C. L., Huang, B. R., and Chen, P. C., "High UV/visible rejection contrast AlGaN/GaN MIS photodetectors," Thin Solid Films, vol. 498, no. 1-2, pp. 133-136, 2006.  SCI  IF=1.569

442.          Chen P. C., Chen C. H., Chang S. J., Su Y. K., Chang P. C., “Huang BRHigh hole concentration of p-type InGaN epitaxial layers grown by MOCVD” , THIN  SOLID FILMS 498 (1-2): 113-117 MAR 1 2006  SCI  IF=1.569

443.          Chang, S. J., Lin, T. K., Su, Y. K., Chiou, Y. Z., Wang, C. K., Chang, S. P., Chang, C. M., Tang, J. J., and Huang, B. R., "Homoepitaxial ZnSe MSM photodetectors with various transparent electrodes,"  Materials Science and Engineering B-Solid State Materials for Advanced Technology, vol. 127, no. 2-3, pp. 164-168, 2006.  SCI/EI  IF=1.281

444.          Jhou, Y. D., Chen, C. H., Chang, S. J., Su, Y. K., Chang, P. C., Chen, P. C., Hung, H., Yu, C. L., Wang, S. M., and Wu, M. H., "GaN MSM photodetectors with photo-CVD annealed Ni/Au electrodes," MICROELECTRONICS JOURNAL 37 (4): 328-331 APR 2006  SCI/EI  IF=0.350

445.          Liu, C. H., Lin, T. K., Chang, S. J., Su, Y. K., Chiou, Y. Z., Wang, C. K., Chang, S. P., Tang, J. J., and Huang, B. R., "Photo-assisted thermally oxidized GaAs insulator layers deposited by photo-CVD," Surface & Coatings Technology, vol. 200, no. 10, pp. 3250-3253, 2006.  SCI/EI  IF=1.646

446.          Wang, C. K., Chang, S. J., Su, Y. K., Chiou, Y. Z., Lin, T. K., Wong, C. C., Liu, H. L., Chang, S. P., and Tang, J. J., "Room temperature photo-CVD SiO2 layers on AlGaN and AlGaN/GaN MOS-HFETs," Physica Status Solidi A-Applications and Materials Science, vol. 203, no. 2, pp. 404-409, 2006.  SCI/EI  IF=1.041

447.          Chang, S. J., Hou, H. S., and Su, Y. K., "Automated passive filter synthesis using a novel tree representation and genetic programming," Ieee Transactions on Evolutionary Computation, vol. 10, no. 1, pp. 93-100, 2006.  SCI  IF=3.257

448.          Hsu, S. H., Su, Y. K., Chang, S. J., Chen, W. C., and Tsai, H. L., "InGaAsN metal-semiconductor-metal photodetectors with modulation-doped heterostructures," Ieee Photonics Technology Letters, vol. 18, no. 1-4, pp. 547-549, 2006.  SCI  IF=2.266

449.          Yu, H. C., Wang, J. S., Su, Y. K., Chang, S. J., Lai, F. I., Chang, Y. H., Kuo, H. C., Sung, C. P., Yang, H. P. D., Lin, K. F., Wang, J. M., Chi, J. Y., Hsiao, R. S., and Mikhrin, S., "1.3-mu m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE," Ieee Photonics Technology Letters, vol. 18, no. 1-4, pp. 418-420, 2006.  SCI  IF=2.266

450.          Su, Y. K., Hsu, S. H., Sio, C. C., Chen, W. C., and Chang, S. J., "DC and 1/f noise characteristics of InGaP/InGaAsN/GaAs double heterojunction bipolar transistors," Semiconductor Science and Technology, vol. 21, no. 2, pp. 167-170, 2006.  SCI/EI  IF=1.222

451.          Ramaiah, K. S., Su, Y. K., Chang, S. J., and Chen, C. H., "A comparative study of blue, green and yellow light emitting diode structures grown by metal organic chemical vapor deposition," Solid-State Electronics, vol. 50, no. 2, pp. 119-124, 2006.  SCI/EI  IF=1.247

452.          Yang R. Y., Weng M. H., Ho Y. S., Su Y. K., Yeh Y. M., "Effect of thickness on the structural and electrical properties of sol-gel-derived (Zr, Sn)TiO4 thin films," Electrochemical and Solid State Letters 9 (5): F31-F33 2006.  SCI  IF=1.970

453.          Lin J. C., Su Y. K., Lan W. H., Kuan T. M., Chen W. R., Cheng Y. C., Lin W. J., Tzeng Y. C., Shin H. Y., "The influence of vicinal sapphire substrate on GaN epilayers and LED structures grown by metalorganic chemical vapor deposition," Materials Science and Engineering B-Solid State Materials for Advanced Technology 128 (1-3): 107-110 MAR 15 2006.  SCI/EI  IF=1.281

454.          Chang S. J., Ko T. K. , Su Y. K., Chiou Y. Z., Chang C. S., Shei S. C., Sheu J. K., Lai W. C., Lin Y. C., Chen W. S., Shen C. F., "GaN-based p-i-n sensors with ITO contacts," IEEE Sensors Journal 6 (2): 406-411 APR 2006.  SCI/EI  IF=1.100

455.          Liu K. T., Su Y. K., Chuang R. W., Chang S. J., Horikoshi Y., "Electrical and surface composition properties of phosphorus implantation in Mg-doped GaN," Microelectronics Journal 37 (5): 417-420 MAY 2006  SCI/EI  IF=0.350

456.          Hsu S. H., Chen W. R., Su Y. K., Chuang R. W., Chang S. J., Chen W. C., "Effects of nitrogen incorporation on the electronic properties of GaxN1-xAs1-y epilayers probed by persistent photoconductivity," Journal of Crystal Growth 290 (1): 87-90 APR 15 2006  SCI/EI  IF=1.681

457.          Wu H. W., Weng M.H., Su Y.K., Yang R.Y., Hung C.Y., "Spurious suppression of a parallel coupled microstrip bandpass filter with simple ring EBG cells on the middle layer," Ieice Transactions on Electronics E89C (4): 568-570 APR 2006  SCI  IF=0.479

458.          Wang J.P., Su Y.K., Chen J.F., "Device enhancement using process-strained-Si for sub-100-nm nMOSFET," IEEE Transactions on Electron Devices 53 (5): 1276-1279 MAY 2006  SCI  IF=2.266

459.          Chen W.C., Su Y.K., Chuang R.W., Hsu S.H., "Triple luminescence peaks observed in the InGaAsN/GaAs single quantum well grown by metalorganic vapor phase epitaxy," Japanese Journal of Applied Physics part 1-regular Papers Brief Communications & Review Papers 45 (4B): 3537-3539 APR 2006  SCI/EI  IF=1.096

460.          Chiou Y.Z., Su Y.K., Gong J., Chang S.J., Wang C.K., "Noise analysis of nitride-based metal oxide-semiconductor heterostructure field effect transistors with photo-chemical vapor deposition SiO2 gate oxide in the linear and saturation regions," Japanese Journal of Applied Physics part 1-regular Papers Brief Communications & Review Papers 45 (4B): 3405-3409 APR 2006  SCI  IF=1.096

461.          Su Y.K., Chen W.C., Hsu S.H., Wu J.D., Chang S.J., Chuang R.W., Chen W.R., "Improvement in linearity of novel InGaAsN-based high electron mobility transistors, " Japanese Journal of Applied Physics part 1-regular Papers Brief Communications & Review Papers 45 (4B): 3372-3375 APR 2006  SCI/EI  IF

462.          Chen W.C., Su Y. K., Chuang R. W. Hsu S. H., "Investigation of the optical properties of InGaAs(N):(Sb) quantum wells grown by metal organic vapor phase epitaxy" Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films -- May 2006 -- Volume 24, Issue 3, pp. 591-594  SCI/EI  IF=1.399

463.          Weng M.H., Wu H.W., Su Y.K., Yang R.Y.and Hung C.Y., “Evaluation of microwave material of low K interconnection for RF package,” Microwave and Optical Technology Letters 48 (8): 1675-1678 AUG 2006  SCI  IF=0.467

464.          Tsai C.M., Sheu J.K., Wang P.T., Lai W.C., Shei S.C., Chang S.J., Kuo C.H., Kuo C.W. and Su Y.K., “High efficiency and improved ESD characteristics of GaN-Based LEDs with naturally textured surface grown by MOCVD,” Ieee Photonics Technology Letters 18 (9-12): 1213-1215 MAY-JUN 2006  SCI/EI  IF=2.266

465.          Su Y.K., Hsu S.H., Chuang R.W., Chang S.J. and  Chen W.C., “GaInNAs metal-semiconductor-metal near-infrared photodetectors, “Iee Proceedings-Optoelectronics 153 (3): 128-130 JUN 2006  SCI/EI  IF=0.553

466.          Wang R.L., Su Y.K. and Chen K.Y., “Influence of InGaN channel thickness on electrical characteristics of AlGaN/InGaN/GaN HFETs,“ Electronics Letters 42 (12): 718-719 JUN 8 2006  SCI/EI  IF=1.016

467.          Chang S.J., Hou H.S., Su Y.K., “Automated synthesis of passive filter circuits including parasitic effects by genetic programming,“ Microelectronics Journal 37 (8): 792-799 AUG 2006  SCI  IF=0.350

468.          Yang R.Y., Hung C.Y., Su Y.K., Weng M.H.and Wu H.W., “Loss characteristics of silicon substrate with different resistivities,” Microwave And Optical Technology Letters 48 (9): 1773-1776 SEP 2006  SCI  IF=0.467

469.          Ko T.K., Shei S.C., Chang S.J., Su Y.K., Chiou Y.Z., Lin Y.C., Chang C.S., Chen W.S., Wang C.K., Sheu J.K. and Lai W.C., “Flip-chip p(GaN)-i(GaN)-n(AlGaN) narrowband UV-A photosensors,” Ieee Sensors Journal 6 (4): 964-969 AUG 2006  SCI/EI  IF=1.100

470.          Chang S.J., Lin T.K., Su Y.K., Chiou Y.Z., Wang C.K., Chang S.P., Chang C.M., Tang J.J. and Huang B.R., “ITO/Homoepitaxial ZnSe/ITO MSM sensors with thermal annealing,” Ieee Sensors Journal 6 (4): 945-949 AUG 2006  SCI/EI  IF=1.100

471.          Ko T.K., Chang S.J., Su Y.K., Chiou Y.Z., Chang C.S., Shei S.C., Sheu J.K., Lai W.C., Lin Y.C., Chen W.S. and Shen C.F., “Nitride-based flip-chip p-i-n photodiodes,” Ieee Transactions On Advanced Packaging 29 (3): 483-487 AUG 2006  SCI/EI  IF=1.254

472.          Wu H.W., Weng M.H., Su Y.K., Hung C.Y. and Yang R.Y., “Improved stopband of the dual-mode ring bandpass filter using periodic complementary spilt-ring resonators,” Ieice Transactions On Electronics E89C (8): 1255-1258 AUG 2006  SCI  IF=0.479

473.          Wu P.H., Su Y.K., Chen I.L., Chiou C.H., Hsu J.T. and Chen W.R., “Strain-compensated GaAsN/InGaAs superlattice structure solar cells,” Japanese Journal Of Applied Physics Part 2-Letters & Express Letters 45 (24-28): L647-L649 JUL 2006  SCI  IF=1.096

474.          Hung S.C., Su Y.K., Fang T.H., Chang S.J., “ Shell buckling behavior investigation of individual gallium nitride hollow nanocolumn”, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 84 (4): 439-443 SEP 2006  SCI  IF=1.990

475.          Wu H.W., Su Y.K., Weng M.H. amd Hung C.Y., “A compact narrow-band microstrip bandpass filter with a complementary split-ring resonator,” Microwave And Optical Technology Letters 48 (10): 2103-2106 OCT 2006  SCI  IF=0.467

476.          Hung C.Y., Weng M.H., Su Y.K., Yang R.Y. and Wu H.W., “Design of sharp-rejection, compact, and low-cost ultra-wideband bandpass filters using interdigital resonators,” Microwave And Optical Technology Letters 48 (10): 2093-2096 OCT 2006  SCI  IF=0.467

477.          Wu H.W., Weng M.H., Su Y.K., Hung C.Y. and Yang R.Y., “Spurious suppression of a dual-mode bandpass filter using simple C-shaped electromagnetic bandgap cells,” Microwave And Optical Technology Letters 48 (10): 2090-2093 OCT 2006  SCI  IF=0.467

478.          Shen W. C., Su Y. K. and Ji L. W., “High bright white organic light-emitting diode based on mixing orange and blue emission,” Journal Of Crystal Growth 293 (1): 48-51 JUL 15 2006.  SCI  IF=1.681

479.          Young S. J., Ji L. W., Chang S. J. and Su Y. K., “ZnO metal-semiconductor-metal ultraviolet sensors with various contact electrodes,” Journal Of Crystal Growth 293 (1): 43-47 JUL 15 2006  SCI/EI  IF=1.681

480.          Tu M. L., Su Y. K. and Ma C. Y., “Nitrogen-doped p-type ZnO films prepared from nitrogen gas radio-frequency magnetron sputtering,” Journal Of Applied Physics 100 (5): Art. No. 053705 SEP 1 2006  SCI  IF=2.498

481.          Wu H.W., Chang S. H., Weng M. H., Kuan H. and Su Y. K., “Harmonic suppression in parallel coupled microstrip bandpass filter with embedded C-shaped EBG cells,” Microwave And Optical Technology Letters 48 (11): 2244-2246 NOV 2006  SCI  IF=0.467

482.          Tu M. L., Su Y. K. and Ma C. Y., “Postdeposition annealing effect on redshift behavior of electroluminescence for polymer light-emitting diodes,” Japanese Journal Of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers 45 (10A): 7737-7740 OCT 2006  SCI  IF=1.096

483.          Wu K. M., Chen J. F., Su Y. K., Lee J. R., Lin K. W., Shin J. R. and  Hsu S. L., “Effects of gate bias on hot-carrier reliability in drain extended metal-oxide-semiconductor transistors,” Applied Physics Letters 89 (18): Art. No. 183522 OCT 30 2006  SCI/EI  IF=4.127

484.          Wu K. M., Chen J. F., Su Y. K., Lee J. R., Lin Y. C., and  Hsu S. L., Shin J. R., “Anomalous reduction of hot-carrier-induced ON-resistance degradation in n-type DEMOS transistors,” IEEE Transactions On Device And Materials Reliability 6 (3): 371-376 Sep 2006  SCI/EI  IF=1.044

485.          Yang S. H., Liu M. H. and Su Y. K., “Stable and highly bright white organic light-emitting diode based on 4,4 ',4 ''-tris(N-3-methylphenyl-N-phenyl-amino)-triphenylamine,” Journal Of Applied Physics 100 (8): Art. No. 083111 Oct 15 2006  SCI  IF=2.498

486.          H. P. Hsu, A. Korotcov, Y. S. Huang, W. C. Chen, Y. K. Su and K. K. Tiong. “Contactless electroreflectectance and photoluminescence study of highly strained InGaAs(Sb) double quantum wells”, PHYSICA STATUS SOLIDI A (a) 204, No. 2, 373-380 (2007).  SCI  IF=1.041

487.          Yang R. Y., Weng M. H., Liang C. T., Su Y. K., Shy S. L., “ Low temperature metal induced crystallization of amorphous silicon by nano-gold-particles”, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 45 (42-45): L1146-L1148 NOV 2006 SCI  IF=1.096

488.          Yang R. Y., Su Y. K., Weng M. H., Ho Y. S., “Microstructure and electrical properties of (Zr, Sn)TiO4 thin film deposited on Si(100) using a sol-gel process”, APPLIED SURFACE SCIENCE 253 (4): 2203-2207 DEC 15 2006  SCI  IF=1.263

489.          Hung S. C., Su Y. K., Chang S. J., Chen Y. H., “Vertically aligned GaN nanotubes - Fabrication and current image analysis”, MICROELECTRONIC ENGINEERING 83 (11-12): 2441-2445 NOV-DEC 2006 SCI  IF=1.347

490.          Wu H. W., Weng M. H., Su Y. K., Yang R. Y., Hung C. Y., “Accurate equivalent circuit for etched resonator with effective negative permittivity”, MICROWAVE AND OPTICAL TECHNOLOGY LETTERS 49 (1): 231-234 JAN 2007  SCI  IF=0.467

491.          Weng M. H., Huang C. Y., Wu H. W., Shu K., Su Y. K., “Compact dual-band bandpass filter with enhanced feed coupling structures”, MICROWAVE AND OPTICAL TECHNOLOGY LETTERS 49 (1): 171-173 JAN 2007  SCI IF=0.467

492.          Weng M. H., Wu H. W., Chang Y. C., Huang C. Y., Su Y. K., “A parallel coupled-line bandpass filter with wide stopband using slotted ground structures”, MICROWAVE AND OPTICAL TECHNOLOGY LETTERS 49 (1): 159-162 JAN 2007  SCI  IF=0.467

493.          Wu H. W., Weng M. H., Su Y. K., Yang R. Y., “Characteristics of low K thin film microstrip line on standard lossy silicon substrate for radio frequency integrated circuits”, MICROWAVE AND OPTICAL TECHNOLOGY LETTERS 49 (1): 79-83 JAN 2007  SCI  IF=0.467

494.          Young S. J., Ji L. W., Fang T. H., Chang S. J., Su Y. K., Du X. L., “ZnO ultraviolet photodiodes with Pd contact electrodes”, ACTA MATERIALIA 55 (1): 329-333 JAN 2007  SCI/EI  IF=3.430

495.          Weng M. H., Hung C. Y., Huang C. Y., Ye C. S., Su Y. K., “A novel compact coplanar-waveguide bandpass filter with good stopband rejection”, MICROWAVE AND OPTICAL TECHNOLOGY LETTERS 49 (2): 369-371 FEB 2007  SCI  IF=0.467

496.          Wu H. W., Weng M. H., Su Y. K., Yang R. Y., Hung C. Y., “Propagation characteristics of complementary split-ring resonator for wide bandgap enhancement in microstrip bandpass filter”, MICROWAVE AND OPTICAL TECHNOLOGY LETTERS 49 (2): 292-295 FEB 2007  SCI  IF=0.467

497.          Lin C. H., Su Y. K., Juang Y. Z., Chiu C. F., Chang S. J., Chen J. F., Tu C. H., “  The optimized geometry of the SiGeHBT power cell for 802.11 a WLAN applications”, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS 17 (1): 49-51 JAN 2007  SCI  IF=1.474

498.          Yang R. Y., Su Y. K., Weng M. H., Hung C. Y., Wu H. W., “Characteristics of coplanar waveguide on lithium niobate crystals as a microwave substrate”, JOURNAL OF APPLIED PHYSICS 101 (1): Art. No. 014101 JAN 1 2007 SCI  IF=2.498

499.          Weng M. H., Wu H. W., Shu K., Yang R. Y., Su Y. K., “Design of dual-band bandpass filter with quasi-elliptic function response for WLANs”, IEICE TRANSACTIONS ON ELECTRONICS E90C (1): 189-191 JAN 2007 SCI  IF=0.479

500.          Shen W.C., Su Y.K., Ji L. W., ”High brightness OLED with dual emitting layers”, Materials Science and Engineering A, v 445-446, Feb 15, 2007, p 509-512 

501.          Cheng A. T., Su Y. K., Lai W. C., “MOVPE growth of InGaN/GaN multiple quantum wells for the blue laser diode applications”, Journal of Crystal Growth, v 298, n SPEC. ISS, January, 2007, p 508-510  SCI  IF=1.809

502.          Chen W. C., Su Y. K., Chuang R. W., Tsai M. C., Cheng K. Y., Wang Y. S., “Optical investigations on the surfactant effects of Sb on InGaAsN multiple quantum wells grown by MOVPE”, Journal of Crystal Growth, v 298, n SPEC. ISS, January, 2007, p 145-149  SCI  IF=1.809

503.          Cheng A. T., Su Y. K., Lai W. C., Huang C. H., “DC characteristics improvement of recessed gate GaN-based HFETs grown by MOCVD”, Journal of Crystal Growth, v 298, n SPEC. ISS, January, 2007, p 848-851  SCI  IF=1.809

504.          Weng M. H., Wu, H. W., Su, Y. K., “Compact and Low Loss Dual-Band Bandpass Filter Using Pseudo-Interdigital Stepped Impedance Resonators for WLANs”, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 17, NO. 3, pp. 187-189 March 2007.  SCI  IF=1.474

505.          Yang R.Y., Hung C.Y., Su Y.K., Weng M.H., “UWB bandpass filter with wide stopband using open stubs” MICROWAVE AND OPTICAL TECHNOLOGY LETTERS 49 (3): 573-575 MAR 2007  SCI  IF=0.467

506.          Horng J.B., Chou W.Y., Tsau S., Liao J., Hsu S.M., Chen C.L., Chang K.C., Su,Y.K., “Spatially dispersive displacement sensor utilizing a semiconductor gain” chip APPLIED OPTICS 46 (5): 680-684 FEB 10 2007  SCI  IF=1.637

507.          Hsu H.P., Korotcov A., Huang Y.S., Chen W.C., Su,Y.K., Tiong K.K.,“Contactless electroreflectance and photoluminescence study of highly strained InGaAs(Sb) double quantum wells” PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 204 (2): 373-380 FEB 2007 SCI  IF=1.041

508.          Tu M.L., Su,Y.K., Chang SJ, Chuang RW, “GaNUV photodetector by using transparency antimony-doped tin oxide electrode” JOURNAL OF CRYSTAL GROWTH 298: 744-747 Sp. Iss. SI, JAN 2007  SCI  IF=1.681

509.          Wu .P.H, Su,Y.K., Chen IL, Chen SF, Chiou CH, Guo SH, Hsu JT, Chen WR,“Research of surface morphology in Ga(In)As epilayers on Ge grown by MOVPE for multi-junction solar cells Author(s)” JOURNAL OF CRYSTAL GROWTH 298: 767-771 Sp. Iss. SI, JAN 2007  SCI  IF=1.681

510.          Hung CY, Weng MH, Su YK, Yang RY, “A hairpin line wideband bandpass filter design with embedded open stubs” MICROWAVE AND OPTICAL TECHNOLOGY LETTERS 49 (4): 934-936 APR 2007  SCI  IF=0.467

511.          Hung CY, Weng MH, Su YK, Yang RY “A simple method to design a compact and high performance wideband filter” MICROWAVE AND OPTICAL TECHNOLOGY LETTERS 49 (4): 822-824 APR 2007  SCI  IF=0.467

512.          Hung CY, Weng MH, Su YK, Yang RY “Design of parallel coupled-line microstrip wideband bandpass filter using stepped-impedance resonators” MICROWAVE AND OPTICAL TECHNOLOGY LETTERS 49 (4): 795-798 APR 2007 SCI  IF=0.467

513.          Wu, HW, Su, YK, Yang, RY, Weng MH, Lin YD, “Fabrication of low loss thin film microstrip line on low resistivity silicon for RF applications,” Microelectronics Journal, vol. 38, no. 3, pp. 304-309, Mar. 2007.  SCI  IF=0.651

514.          Wu, PH, Su, YK, Tzeng, YC, Hong, HF, Chu, KY, Chen, YR, “A novel GaAsN/InGaAs strain-compensated multi-quantum wells solar cell, ” SEMICONDUCTOR SCIENCE AND TECHNOLOGY 22 (5): 549-552 MAY 2007  SCI  IF=1.586

515.          Tsai, PC, Chuang, RW, Su, YK, “Lifetime tests and junction-temperature measurement of InGaN light-emitting diodes using patterned sapphire substrates,” JOURNAL OF LIGHTWAVE TECHNOLOGY 25 (2): 591-596 FEB 2007 SCI  IF=2.077

516.          Lin JC, Su YK, Chang SJ, Lan WH, Huang KC, Chen WR, Cheng YC, Lin WJ “GaN-based light-emitting diodes prepared on vicinal sapphire substrates”, IET OPTOELECTRONICS 1 (1): 23-26 FEB 2007 SCI  IF=0.632

517.          Horng JJ, Su YK, Chang SJ, Ko TK, Shei SC, “Nitride-based Schottky barrier sensor module with high electrostatic discharge reliability”, IEEE PHOTONICS TECHNOLOGY LETTERS 19 (9-12): 717-719 MAY-JUN 2007 SCI  IF=2.353

518.          Hung CY, Weng MH, Yang RY, Su YK “Design of the Compact Parallel Coupled Wideband Bandpass Filter With Very High Selectivity and Wide Stopband” IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS 17(7):510-512 July 2007 SCI  IF= 1.424

519.          Weng MH, Hung CY, Su YK “A Hairpin Line Diplexer for Direct Sequence Ultra-Wideband Wireless Communications” IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS 17(7):519-521 July 2007 SCI  IF= 1.424

520.          Su YK, Chen WC, Chuang RW, Hsu SH, Chen BY “InGaAsN metal-semiconductor-metal photodetectors with transparent indium tin oxide Schottky contacts” JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46(4B):2373-2376 APR 2007   SCI  IF=1.222

521.          Chen JF, Wu KM, Lee JR, Su YK, Wang HC, Lin YC, Hsu SL “Characteristics and improvement in hot-carrier reliability of sub-micrometer high-voltage double diffused drain metal-oxide-semiconductor field-effect transistors ” JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46 (4B): 2019-2022 APR 2007 SCI  IF=1.222

522.          Wu HW, Weng MH, Su, YK, Yang RY, Hung CY, “Distributed elements extraction of dc-biased thin film microstrip lines in MMICs,” IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, APR 2007(acceptance)

523.          Huang TS, Su YK, Wang PC, “Study of organic thin film transistor with polymethylmethacrylate as a dielectric layer,” APPLIED PHYSICS LETTERS 91, 092116 AUG 2007   SCI  IF=3.977

524.          Horng J.B., Chou W.Y., Tsau S., Liao J., Hsu S.M., Chen C.L., Chang K.C., Su Y.K. “Spatially dispersive displacement sensor utilizing a semiconductor gain chip,” APPLIED OPTICS 46 (5): 680-684 FEB 10 2007   SCI  IF=1.637

525.          Hung CY, Weng MH, Su YK, Yang RY, Wu HW, “Design of compact and sharp-rejection ultra wideband bandpass filters using interdigital stepped-impedance resonators,” IEICE TRANSACTIONS ON ELECTRONICS E90C (8): 1652-1654 AUG 2007

526.          HUNG CY, YANG RY, WENG MH, and SU YK, “A Compact Semi-Lumped Coplanar Waveguide Low-Pass Filter Fabricated on High Resistivity Silicon Substrate,” IEICE Trans C: Electronics, September 2007; E90-C: 1837 – 1840

527.          J. C. Lin, Y. K. Su, S. J. Chang, W. H. Lan, W. R. Chen, Y. C. Cheng, W. J. Lin, Y. C. Tzeng, H. Y. Shin and C. M. Chang, “InN grown on GaN/sapphire templates at different temperatures by MOCVD,” Optical Materials ,In Press, Corrected Proof, Available online 22 February 2007

528.          Wu PH, Su YK, Chen IL, Chiou CH, Hsu JT, and Chen WR, “1.2-eV GaAsN/InGaAs strain-compensated superlattice structures for high efficiency solar cells,” physica status solidi (c) 4, No. 7, 2854– 2858 (2007)

529.          Wu HW, Weng MH, Su YK, Yang RY, Hung CY, “Equivalent Lumped Elements of DC-Biased Thin Film Microstrip Line in MMICsIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, vol. 17(9), 673-675

530.          Su YK, Ye CS, Weng MH, Hung CY “A Triple-Band Coplanar-Waveguide Bandpass Filter” IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS          SCI  IF= 1.424

531.          Chang SJ, Wei SC, Su YK, Lai WC, “Nitride-based dual-stage MQW LEDs” JOURNAL OF THE ELECTROCHEMICAL SOCIETY 154 (10): H871-H874 2007

532.          Lin, J. C., Su, Y. K. , Chang, S. J. , Lan, W. H. , Huang, K. C., Cheng, Y. C. , Lin, W. J., “Improved external quantum efficiency of GaN p-i-n photodiodes with a TiO2 roughened surface”, IEEE PHOTONICS TECHNOLOGY LETTERS 20(1-4), 285-287, JAN-FEB 2008

533.          Huang, C. Y., Su, Y. K., Wen, T. C., Guo, T. F., Tu, M. L., “Single-layered Hybrid DBPPV-CdSe-ZnS Quantum-Dot Light-Emitting Diodes” IEEE PHOTONICS TECHNOLOGY LETTERS 20(4), 282-284, JAN-FEB 2008

534.          Chen, W. C., Su, Y. K., Chuang R. W., Yu, H. C., Tsai, M. C , Cheng, K. Y., Horng, J. B., Hu, C., Tsau, S., “Highly strained 1.22-mu m InGaAs lasers grown by MOVPE ”, IEEE PHOTONICS TECHNOLOGY LETTERS 20(1-4), 264-266, JAN-FEB 2008

535.          Jhou, Y. D. , Chang, S. J. , Su, Y. K. , Chen, C. H. , Lee, H. C. , Liu, C. H. , Lee, Y. Y., “Quaternary AlInGaN-based photodetectors”, IET OPTOELECTRONICS 2(1), 42-45, FEB 2008

536.          Tsai, Y. S. , Juang, F. S. , Yang, T. H., Yokoyama, M. C. , Ji, L. W. , Su, Y. K., “Effects of different buffer layers in flexible organic light-emitting diodes”, JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 69(2-3), 764-768, FEB-MAR 2008

537.          Chen, W. C., Chuang, R. W. , Su, Y. K. , Hsu, S. H., “Controlling the nitrogen composition of InGaAsN quantum wells grown by MOVPE”, JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 69(2-3), 404-407, FEB-MAR 2008

538.          Wang, J. P., Su, Y. K., Chen, J. F., “Effects of surface cleaning on stressvoiding and electromigration of Cu-damascene interconnection”, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 8(1), 210-215, MAR 2008

539.          Chen, W. C., Su, Y. K., Chuang, R. W., Yu, H. C. , Chen, B. Y. , Hsu, S. H., “Investigation of InGaAsN MSM photodetectors with transparent ITO Schottky contacts”, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 23(3), 035027, MAR 2008

540.          Lin, J. C., Su, Y. K., Chang, S. J., Lan, W. H., Huang, K. C., Chen, W. R., Lan, C. H., Huang, C. C., Lin, W. J., Cheng, Y. C., “GaN p-i-n photodetectors with an LT-GaN interlayer”, IET OPTOELECTRONICS 2(2), 59-62, APR 2008

541.          Huang, T. S., Su, Y. K., Wang, P. C., “Poly(methyl methacrylate) dielectric material applied in organic thin film transistors”, JAPANESE JOURNAL OF APPLIED PHYSICS 47(4), 3185-3188, APR 2008

542.          Cheng, A. T., Su, Y. K., Lai, W. C. , Chen, Y. Z., “Metalorganic vapor phase epitaxy growth of m-plane GaN using LiAlO2 substrates”, JAPANESE JOURNAL OF APPLIED PHYSICS 47(4), 3074-3076, APR 2008

543.          Chen, Y. F., Chen, W. C., Chuang, R. W., Su,Y. K. and Tsai, H. L., “GaInNAs/GaAs p-i-n Photodetector with Multiquantum Well Structure”, Japanese Journal of Applied Physics 47(4), 2982-2986, APR 2008

544.          Cheng, A. T, Su, Y. K., Lai, W. C., “Improved light output of nitride-based light-emitting diodes by lattice-matched AlInN cladding structure”, IEEE PHOTONICS TECHNOLOGY LETTERS, 20(9-12), 970-972, MAY-JUN 2008

545.          Su, Y. K., Tsai, P. C., Huang, C. Y. Chen, Y. C., “White light emission from DBPPV and CdSe/ZnS quantum dots dually hybridized on InGaN light-emitting diodes”, IEEE ELECTRON DEVICE LETTER, 29(6), 575-577, JUN 2008

546.          Ye, C. S., Su, Y. K., Weng, M. H., Huang, C. Y., “Design of a triple-band coplanar-waveguide bandpass filter”, MICROWAVE AND OPTICAL TECHNOLOGY LETTERS 50(6), 1545-1547, JUN 2008

547.          Huang, C. Y., Su, Y. K., Chen, Y. C., Tsai, P. C., Wan, C. T., Li, W. L., “Hybrid CdSe-ZnS Quantum Dot-InGaN-GaN Quantum Well Red Light-Emitting Diodes”, IEEE ELECTRON DEVICE LETTERS, 29(7), 711-713, JUL 2008

548.          Su, Y. K.,Chen, W. C., Wan, C. T., Yu, H. C., Chuang, R. W., Tsai, M. C., Cheng, K. Y., Hu, C., Tsau, S., “ Optimization of the highly strained InGaAs/GaAs quantum well lasers grown by MOVPE”,  JOURNAL OF CRYSTAL GROWTH 310(15), 3615-3620, JUL 2008

549.          Chen, Y. C., Huang, C. Y., Su, Y. K., Li, W. L., Yeh, C. H., Lin, Y. C., “The hybridization of CdSe/ZnS Quantum Dot on InGaN Light-Emitting Diodes for Color Conversion”, IEEE Transactions on nanotechnology, 7, 503-507, JUL 2008

550.          Huang, J. J., Su, Y. K., Chang,. M. H., Hsieh, T. E., Huang, B. R., Wang, S. H., Chen, W. R., Tsai, Y. S., Hsieh, H. E., Liu, M. O., Juang, F. S., “Lifetime improvement of organic light emitting diodes using LiF thin film and UV glue encapsulation”, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(7), 5676-5680, JUL 2008

551.          Chuang, R. W., Tsai, P. C., Su, Y. K., Chu, C. H., “Improved ESD properties by combining GaN-based light-emitting diode with MOS capacitor”, SOLID-STATE ELECTRONICS, 52(7), P1043-1046, JULY 2008

552.          Lin, J. C., Su, Y. K., Chang, S. J., Lan, W. H., Chen, W. R., Huang, K. C., Cheng, Y. C., Lin, W. J., “Low dark current GaN p-i-n photodetectors with a low-temperature AIN interlayer”, IEEE PHOTONICS TECHNOLOGY LETTERS, 20(13-16), 1255-1257, JUL-AUG 2008

553.          Su, Y. K., Chen, J. R., Weng, M. H., Hung, C. Y., “Design of a miniature and harmonic control patch dual-mode bandpass filter with transmission zeros”,  MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 50(8), 2161-2163, AUG 2008

554.          Chen, J. J., Su, Y. K., Lin, C .L., Chen, S. M., Li, W. L., Kao, C. C., “Enhanced output power of GaN-based LEDs with nano-patterned sapphire substrates”,  IEEE PHOTONICS TECHNOLOGY LETTERS, 20(13-16), 1193-1195, JUL-AUG 2008

555.          Cheng, A. T., Su, Y. K., Lai, W. C., Chen, Y. Z., Kuo, S. Y., “Characterization of Mg-Doped AlInN annealed in nitrogen and oxygen ambients”, JOURNAL OF ELECTRONIC MATERIALS, 37(8), 1070-1075, AUG 2008

556.          Su, Y. K., Chen, J. J., Lin, C. L., Chen, S. M., Li, W. L. , Kao, C. C., “GaN-Based Light-Emitting Diodes Grown on Photonic Crystal-Patterned Sapphire Substrates by Nanosphere Lithography”, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(8), 6706-6708, AUG 2008

557.          Liu, C. H., Wang, R. L., Su, Y. K., Tu, C. H., Juang, Y. Z., “Degeneration of CMOS power cells after hot-carrier and load mismatch stresses”, IEEE ELECTRON DEVICE LETTERS, 29(9), 1068-1070, SEP 2008

558.          Huang, J. J. , Su, Y. K., Wang, S. H., Liu, Y. H., Juang, F. S., “Efficiency enhancement of top emission organic light-emitting diodes with Ni/Au periodic anode”, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(9), 7359-7362, SEP 2008

559.          Su, Y. K., Chang, S. J., Jhou, Y. D., Liu, C. H., “GaN Metal-Semiconductor-Metal Photodetectors With SiN/GaN Nucleation Layer”, IEEE SENSORS JOURNAL, 8(9-10), 1693-1697, SEP-OCT 2008

560.          Wu, H. W., Su, Y. K., Weng, M. H., Yang, R. Y., “Design of dual-band bandpass filter using diverse quarter-wavelength resonators for GPS/WLAN applications”, MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 50(10), 2694-2696, OCT 2008

561.          Wu, H. W., Weng, M. H., Su, Y. K., Yang, R. Y., Ye, C. S., “An effective equivalent circuit model of slotted ground structures under planar microstrip” MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 50(10), 2651-2653, OCT 2008

562.          Huang, J. J., Ueng, H. Y., Su, Y. K., Lin, S. J., Juang, F. S., “Thickness for Optimizing of Organic Layer and Multi-Layer Anode on Luminance Efficiency in White-Light Top-Emission Organic Light-Emitting Diodes”, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 8(10), Sp. Iss SI, 5176-5180, OCT 2008

563.          Huang, J. J., Lin, Y. C., Su, Y. K., Wu, Y. L., Juang, F. S., “Black Film for Improving the Contrast Ratio of Organic Light Emitting Diodes”, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 8(10), Sp. Iss. SI, 5227-5231, OCT 2008

564.          Huang, T. S., Huang, C. Y., Su, Y. K., Fang, J. S., Rao, M. V. M., Guo, T. F., Wen, T. C., “High-Efficiency Polymer Photovoltaic Devices With Glycerol-Modified Buffer Layer”, IEEE PHOTONICS TECHNOLOGY LETTERS, 20(21-24), 1935-1937, NOV-DEC 2008

565.          Huang, J. J., Su, Y. K., Juang, F. S., Liu Y. H., Chang, S. J., “Effect of Phase Shift in Periodic Anode on the Emission Spectra of Top Emitting Organic Light Emitting Diodes” IEEE PHOTONICS TECHNOLOGY LETTERS, 20(21), 1784-1786, NOV-DEC2008

566.          Wan, C. T., Su, Y. K., Chuang, R. W., Huang, C. Y., Wang, Y. S., Chen, W. C., Yu, H. C., “Improving photoluminescence of highly strained 1.32 mu m GaAsSb/GaAs multiple quantum wells grown on misorientation substrate”, JOURNAL OF CRYSTAL GROWTH, 310(23), 4854-4857, NOV 2008

567.          Su, Y. K., Wan, C. T., Chuang, R. W., Huang, C. Y., Chen, W. C., Wang, Y. S., Yu, H. C., “ Temperature effect on the growth of strained GaAs1-ySby/GaAs (y > 0.4) quantum wells by MOVPE”, JOURNAL OF CRYSTAL GROWTH, 310(23), 4850-4853, NOV 2008

568.          Saha, S. K., Su, Y. K., Lin, W. L., “Multi quantum well structures in deep blue organic light-emitting diode”, EUROPHYSICS LETTERS, 85, 18002(p1-p6), JAN 2009

569.          Ye, C. S., Su, Y. K., Weng, M. H., Hung, C. Y., “A MICROSTRIP RING-LIKE DIPLEXER FOR BLUETOOTH AND UWB APPLICATION”, MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 51(6), 1518-1520, JAN 2009

570.          Ye, C. S., Su, Y. K., Weng, M. H., Hon, K., Syu, J. J., “DESIGN OF A COMPACT CPW BANDPASS FILTER USED FOR UWB APPLICATION”, MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 51(2), 298-300, FEB 2009

571.          Su, Y. K., Chen, J. R., Weng, M. H., Hung, C. Y., “A RIGHT SLOTTED PATCH DUAL-MODE DUAL BAND BANDPASS FILTER USED FOR WLAN”, MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 51(2), 491-494, FEB 2009

572.          Yang, R. Y., Weng, M. H., Su, Y. K., Ye, C. S., Wu HW “Effect of annealing temperatures on microstructure of (Zr0.8Sn0.2)TiO4 thin films grown by a sol-gel process”, JOURNAL OF ALLOYS AND COMPOUNDS, 471(1-2), 511-514, MAR 2009

573.          Huang, C. J., Meen, T. H., Liao, K. C., Su, Y. K., “The mechanism of efficiency enhancement with proper thickness of DPVBi layer for blue organic light-emitting devices (BOLED)”, JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 70(3-4), 765-768,MAR-APR 2009

574.          Chang, T. H., Wu, P. H., Chen, S. H., Chan, C. H., Lee, C. C., Chen, C. C., Su, Y. K., “Efficiency enhancement in GaAs solar cells using self-assembled microspheres”, OPTICS EXPRESS, 17(8), 6519-6524, APR 2009

575.          Chen, Y. C., Huang, C. Y., Su, Y. K., Yeh, C. H., Lin, Y. C., “White Light Generation from 2,3-Dibutoxy-1,4-poly(phenylene vinylene)-CdSe/ZnS Quantum Dot-InGaN/GaN Quantum Well Dual Hybrid Light-Emitting Diodes”, JAPANESE JOURNAL OF APPLIED PHYSICS, 48(4), 04C111, APR 2009

576.          M.V. Madhava Rao, Su, Y. K., Huang, T. S., Yeh, C. H., Tu, M. L., “Electroluminescent Characteristics of DBPPV-ZnO Nanocomposite Polymer Light Emitting Devices”, Nanoscale Research Letters, 4(5), 485-490, MAY 2009

577.          Ye, CS, Su, Y. K., Weng, M. H., Wu, H. W., “RESONANT PROPERTIES OF THE SIERPINSKI-BASED FRACTAL RESONATOR AND ITS APPLICATION ON LOW-LOSS MINIATURIZED DUAL-MODE BANDPASS FILTER”, MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 51(5), 1358-1361, MAY 2009

578.          Su, Y. K., Lee, H. C., Lin, J. C., Huang, K. C., Lin, W. J., Li, T. C., Chang, K. J., “In0.11Ga0.89N-based p-i-n photodetector”, PHYSICA STATUS SOLIDI C, 6(S2), S811-S813, 2009.

579.          Huang, C. Y., Su, Y. K., Chuang, Ricky W., Chen, Y. C., Huang, T. S., and Wan, C. T., “Tetrachromatic Hybrid White Light-Emitting Diodes and the Energy Transfer Between Conjugated Polymers and CdSe/ZnS Quantum Dots”, Journal of The Electrochemical Society, 156(8), H625-H628, MAY 2009

580.          Su, Y. K., Chen, J. J., Lin, C. L., Chen, S. M., Li, W. L., Kao, C. C., “Pattern-size dependence of characteristics of nitride-based LEDs grown on patterned sapphire substrates”, JOURNAL OF CRYSTAL GROWTH, 311(10), P2973-2976, MAY 1, 2009

581.          Lee, K. H., Chang, P. C., Chang, S. J., Su, Y. K., Wang, Y. C., Yu, C. L., Wu, S. L., “ Al0.25 Ga0.75 N/GaN schottky barrier photodetectors with an Al0.3 Ga0.7 N intermediate layer”, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(7), J199-J202, 2009

582.          Ji, L. W., Peng, S. M., Su, Y. K., Young, S. J., Wu, C. Z., Cheng, W. B., “Ultraviolet photodetectors based on selectively grown ZnO nanorod arrays”, APPLIED PHYSICS LETTERS, 94(20), 203106, MAY 20, 2009

583.          Tsai, C. F., Su,Y. K., Lin,C. L., “Improvement in the Light Output Power of GaN-Based Light-Emitting Diodes by Natural-Cluster Silicon Dioxide Nanoparticles as the Current-Blocking Layer”, IEEE PHOTONICS TECHNOLOGY LETTERS, 21(14), JULY 15, 2009

584.          Lee, H. C., Su, Y. K., Lin, J. C., Cheng, Y. C., Wu, S. L., Jhou, Y. D., “AlInGaN Metal-Insulator-Semiconductor Photodetectors at UV-C 280 nm”, ELECTROCHEMICAL AND SOLID-STATE LETTERS, 12(10), H357-H360, JULY 22, 2009

585.          Chan, C. H., Wu, J. D, Huang, Y. S., Su, Y. K., Tiong, K. K., “Temperature dependent surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs double quantum well structures grown by metal organic vapor phase epitaxy”, JOURNAL OF APPLIED PHYSICS, 106(4), 043523, AUG 15 2009

586.          Weng, M. H., Kuan, H., Chen, W. L., Ye, C. S., Su, Y. K., “DESIGN OF A STOPBAND-IMPROVED UWB FILTER USING A PAIR OF SHUNT AND EMBEDDED OPEN STUBS”, MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 51(9), 2121-2124, SEP 2009

587.          Wan, C. T., Su, Y. K., Yu, H. C., Huang, C. Y., Lin, W. H., Chen, W. C., Tseng, H. C., Horng, Hu, J. B., C. and Tsau, Seth "Low Transparency Current Density and Low Internal Loss of 1060-nm InGaAs Laser With GaAsP–GaAs Superlattices as Strain-Compensated Layer", IEEE PHOTONICS TECHNOLOGY LETTERS, 21(19), 1474-1476, OCT 1, 2009

588.          Kao, C. C., Su, Y. K., Lin, C. L., Chen, J. J., “Efficiency Improvement of GaN-Based LEDs With SiO2 Micro-Rods Array and Textured Sidewalls”, IEEE Electron Device Letters, 31(1), 1-3, 2009

589.          Wan, C. T, Su, Y. K., Chuang, R. W, Yu, H. C. , Huang, C. Y., Wang, Y. S., Chen, W. C., Lin,  W. H., Pilkuhn,  M. H., “High-Temperature Stability of Lasing Wavelength in GaAsSb/GaAs QW Lasers”, IEEE ELECTRON DEVICE LETTERS, 30(11), 1155-1157, 2009

590.          Chang, P. C., Lee, K. H., Chang, S. J., Su, Y. K., Liu, C. H., “AlGaN/GaN two-dimensional electron gas Schottky barrier photodiodes with multiple MgxNy/GaN layers”, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 24(10), 105005, 2009  

591.          Su, Y. K., Peng, S. M., Ji, L. W., Wu, C. Z., Cheng, W. B. and Liu, C. H., “Ultraviolet ZnO Nanorod Photosensors”, LANGMUIR, 26(1), 603-606, 2010

592.          Peng, S. M.; Su, Y. K., Wu, C.Z.; Cheng, W. B.; Ji, L.W.; Chao, W.C., “ZnO Nanobridge Array UV Photodetectors”, Journal of Physical Chemistry C, 114(7), 3204-3208, 2010

593.          Rao M.V.M., Huang, T.S., Su, Y.K., Huang, Y.T., “Fullerene and Pentacene as a Pure Organic Connecting Layer in Tandem Organic Light Emitting Devices”, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 157(1), H69-H71, 2010

594.          Lee, K.H., Chang, P.C., Chang, S.J., Su, Y.K., Wang, Y.C., Liu, C.H., “High-Sensitivity Nitride-Based Ultraviolet Photosensors with a Low-Temperature AlGaN Interlayer”, JOURNAL OF ELECTRONIC MATERIALS, 39(1), 29-33, JAN 2010

595.          Kao, C.C., Su, Y.K., Lin, C.L., Chen, J.J., “Efficiency Improvement of GaN-Based LEDs With SiO2 Microrod Array and Textured Sidewalls” IEEE ELECTRON DEVICE LETTERS, 31(1), 35-37, JAN 2010

596.          Su, Y.K., Huang, C.Y., Chen, J.J., Kao, C.C., Tsai, C.F. “Improvement of extraction efficiency for GaN-based light emitting diodes”, SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 53(2), 322-325, FEB 2010

597.          Huang, C.Y., Huang, T.S., Cheng, C.Y., Chen, Y.C., Wan, C.T., Rao M.V.M., Su, Y.K.,  “Three-Band White Light-Emitting Diodes Based on Hybridization of Polyfluorene and Colloidal CdSe-ZnS Quantum Dots”, IEEE PHOTONICS TECHNOLOGY LETTERS, 22(5), 305-307, MAR 1 2010

598.          Ye, C.S., Su, Y.K., Weng, M.H., Hung, C.Y., Yang, R.Y., “DESIGN OF THE COMPACT PARALLEL-COUPLED LINES WIDEBAND BANDPASS FILTERS USING IMAGE PARAMETER METHOD”, PROGRESS IN ELECTROMAGNETICS RESEARCH-PIER, 100, 153-173, 2010

599.          Rao M.V.M., Huang, T.S., Su, Y.K., Tu, M.L., Huang, C.Y., Wu, S.S., “Polymaer light-emitting devices usin poly(ethyleneoxide) as an electron injecting layer”, NANO-MICRO, 2(1), 49-52, 2010

600.          Lee, K.H., Chang, P.C., Chang, S.J., Su, Y.K., Wang, Y.C., Yu, C.L., Kuo, C.H., “ Dislocation reduction in nitride-based Schottky diodes by using multiple MgxNy/GaN nucleation layers”, THIN SOLID FILMS, 518(10), 2839-2842, Mar 1, 2010

601.          Chen,J.J., Su, Y.K., Lin, C.L., Kao, C.C., “Light Output Improvement of AlGaInP-Based LEDs With Nano-Mesh ZnO Layers by Nanosphere Lithography”, IEEE PHOTONICS TECHNOLOGY LETTERS, 22(6), 383-385, MAR 15, 2010

602.          Chang, P.C., Lee, K.H., Chang, S.J., Su, Y.K., Lin, T.C., Wu, S.L., “III-Nitride Schottky Rectifiers With an AlGaN/GaN/AlGaN/GaN Quadruple Layer and Their Applications to UV Detection”, IEEE SENSORS JOURNAL, 10(4), 799-804, APR 2010

603.          Lee, H.C., Su, Y.K., Lin, J.C., Cheng, Y.C., Li, T.C., Chang, K.J., “AlInGaN ultraviolet-C photodetectors with a Ni/Ir/Au multilayer metal contact”, SOLID-STATE ELECTRONICS, 54(4), 488-491, APR 2010 

604.          Huang, C.Y., Su, Y.K., Cheng, C.Y., Rao M.V.M., Chen, Y.C., Huang, T.S., Wen, T.C., Guo, T.F., “Color-Tunable Polymer Light-Emitting Diodes with Conjugated Polymer Homojunctions”, JAPANESE JOURNAL OF APPLIED PHYSICS, 49(4), Special Issue: Part 2 Sp. Iss. SI  Article Number: 04DK10   Part: Part 2 Sp. Iss. SI    

605.          Hsu, H.C.,Su, Y.K., Huang, S.J., Wang, Y.J., Wu, C.Y., Chou, M.C., “Direct Growth of a-Plane GaN on r-Plane Sapphire by Metal Organic Chemical Vapor Deposition”, JAPANESE JOURNAL OF APPLIED PHYSICS , 49(4), Special Issue: Part 2 Sp. Iss. SI  Article Number: 04DH05 Part: Part 2 Sp. Iss. SI, 2010

606.          Hsu, H.C.,Su, Y.K., Huang, S.J., Wang, Y.J., Wu, C.Y., Chou, M.C., “Improvement in a-Plane GaN Crystal Quality by Investigating Different Buffer Layer”, JAPANESE JOURNAL OF APPLIED PHYSICS, 49(4), Special Issue: Part 2 Sp. Iss. SI  Article Number: 04DH04   Part: Part 2 Sp. Iss. SI, 2010

607.          Tsai PC, Su, Y.K., Chen WR, Huang CY, “Enhanced Luminescence Efficiency of InGaN/GaN Multiple Quantum Wells by a Strain Relief Layer and Proper Si Doping”, JAPANESE JOURNAL OF APPLIED PHYSICS, 49(4), Special Issue: Part 2 Sp. Iss. SI  Article Number: 04DG07    Part: Part 2 Sp. Iss. SI, 2010

608.          Su, Y.K., Kao, C.C., Lin, C.L., Chen, J.J., “The Study of Stress Effects in GaN Epilayers on Very Thin Sapphire Substrates Using Chemical Mechanical Polishing Technique”, JAPANESE JOURNAL OF APPLIED PHYSICS , 49(4), Special Issue: Part 2 Sp. Iss. SI  Article Number: 04DF15   Part:  Part 2 Sp. Iss. SI, 2010

609.          Liu, C.H., Su, Y.K., Wang, R .L., To, C.H., Juang YZ “The Layout Geometry and Power-Level Dependences of Degradation in Complementary Metal-Oxide-Semiconductor RF Power Cells from Hot-Carrier Stress with Load Pull System”, JAPANESE JOURNAL OF APPLIED PHYSICS, 49(4), Special Issue: Part 2 Sp. Iss. SI  Article Number: 04DC27 Part: Part 2 Sp. Iss. SI , 2010

610.          Lee, K.H., Chang, P.C., Chang, S.J., Su, Y.K., Yu, C.L., “AlGaN/GaN high electron mobility transistors based on InGaN/GaN multi-quantum-well structures”, APPLIED PHYSICS LETTERS, 96(21), 212105, MAY 2010

611.          Lee, H.C., Su, Y.K., Chuang, W.K., Lin, J.C., Huang, K.C., Cheng, Y.C., Chang, K.J., “ on electrical characteristics of i-In0.13Ga0.87N p-i-n photovoltaics by using a single/multi-antireflection layer”, SOLAR ENERGY MATERIALS AND SOLAR CELLS, 94(7), 1259-1262, JULY 2010

612.          Kao, C.C.,Su, Y.K., Lin, C.L., Chen, J.J., “Localized Surface Plasmon-Enhanced Nitride-Based Light-Emitting Diode With Ag Nanotriangle Array by Nanosphere Lithography”, IEEE PHOTONICS TECHNOLOGY LETTERS, 22(13), 984-986, JULY 2010

613.          Tsai, P.C., Chen, W.R., Su, Y.K., Huang, C.Y., “Enhanced light output of InGaN LEDs with a roughened p-GaN surface using different TMGa flow rates in p-AlGaN layer” APPLIED SURFACE SCIENCE, 256(22), 6694-6698, SEPTEMBER 2010

614.          Huang, T.S., Huang, C.Y., Su, Y.K., Chen, Y.C., Fang, J.S., Wen, T.C., “Extension of active region in crossbar-type polymer solar photovoltaics induced by highly conductive PEDOT:PSS buffer layer”, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B  , 28(4)702-705 , JULY 2010

615.          Kao, C.C., Su, Y.K., Lin, C.L., Chen, J.J., “The aspect ratio effects on the performances of GaN-based light-emitting diodes with nanopatterned sapphire substrates”, APPLIED PHYSICS LETTERS, 97(2), 023111, JULY 12 2010  

616.          Tsai, P.C., Chen, W.R., Su, Y.K., “Enhanced ESD properties of GaN-based light-emitting diodes with various MOS capacitor designs”, SUPERLATTICES AND MICROSTRUCTURES, 48(1), 23-30, JULY 2010  

617.          Rao, M.V.M., Su, Y.K., Huang, T.S., Tu, M.L., Wu, S.S., Huang, C.Y., “Enhanced Performance of Polymer Light Emitting Devices Using Zinc Oxide Nanoparticle with Poly(vinylcarbazole)”, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 157(8), H832-H836, 2010   

618.          Liu, C.H., Wang, R.L., Su, Y.K., Tu, C.H., Juang, Y.Z., “DC and RF Degradation Induced by High RF Power Stresses in 0.18-mu m nMOSFETs”, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 10(3), 317-323    

619.          Hsu, H.C., Su, Y.K., Cheng, S.H., Huang, S.J., Cao, J.M., Chen, K.C., “ Investigation of etch characteristics of non-polar GaN by wet chemical etching”, APPLIED SURFACE SCIENCE, 257(3), 1080-1083, NOV 15 2010  

620.          Lee, L., Fan, W.C., Ku, J.T., Chang, W.H., Chen, W.K., Chou, W.C., Ko, C.H., Wu, C.H., Lin, Y.R., Wann, C.H., Hsu, C.W., Chen, Y.F., Su, Y.K. “Cathodoluminescence studies of GaAs nano-wires grown on shallow-trench-patterned Si”, NANOTECHNOLOGY, 21(46), 465701, NOV. 19, 2010

621.          Lee, H. C.; Su, Y. K., Lan, W. H., Lin, J. C., Huang, K. C., Lin, W. J., Cheng, Y. C., Yeh, Y. H., “Study of Electrical Characteristics of GaN-based Photovoltaics withGraded InxGa1-xN Absorption Layer”, IEEE PHOTONICS TECHNOLOGY LETTERS, PP(99), 2010

622.          Hsu, H.C., Su, Y.K., Huang, S.J., Cheng, C.Y., Cheng, S.H., Cao, J.M., Hong, J.H., Chen, H.C., “Improvement in a-Plane GaN Crystal Quality by Investigating Different Buffer Layer”, 真空科技, 23(4), 35-40), DEC. 31, 2010

623.          Wang, R.L., Liu, C.H., Su, Y.K., Tu CH, Juang, Y.Z.,” The Layout Geometry Dependence of the Power Cells on Performances and Reliability”, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 20(12), 687-689, DEC.2010 

624.          Huang, S.J., Su, Y.K., Tseng, C.Y., Lin, S.C., Hsu, H.C., “Improvement of Light Intensity for Nitride-Based Multi-Quantum Well Light Emitting Diodes by Stepwise-Stage Electron Emitting Layer”, APPLIED PHYSICS EXPRESS, 3(12), 122106, 2010  

625.          M.V. Madhava Rao, Su, Y.K., Huang, T.S., Chen, Y.C., “White organic light emitting devices based on multiple emissive nanolayers”, NANO-MICRO LETTERS, 2(4), 242-246, 2010

626.          Yu, H.C., Wan, C.T., Chen, W.C., Hsu, W.C., Su, K.H., Huang, C.Y., Su, Y.K., “Performance Improvement of InGaAsN/GaAs Quantum Well Lasers by Using Trimethylantimony Preflow”, APPLIED PHYSICS EXPRESS, 4(1), 012103, JAN, 2011  

627.          Su, B.Y., Su, Y.K., Tseng, Z.L., Shih, M.F., Cheng, C.Y., Wu, T.H., Wu, C.S., Yeh, J.J., Ho, P.Y., Juang, Y.D., Chu, S.Y., “Antirefective and Radiation Resistant ZnO Thin Films for the Efficiency Enhancement of GaAs Photovoltaics”, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 158(3),H267-H270, 2011

628.          Peng, S.M., Su, Y.K., Ji, L.W., Young, S.J., Tsai, C.N., Wu, C.Z., Chao, W.C., Cheng, W.B., Huang, C.J.,”Photoconductive Gain and Low-Frequency Noise Characteristics of ZnO Nanorods”, ELECTROCHEMICAL AND SOLID STATE LETTERS, 14(3), J13-J15, 2011 

629.          Wu, T.H., Su, Y.k., Lin, Y.C., Wang, Y.J., “Growth, Fabrication, and Characterization of InGaAsN Double Heterojunction Solar Cells”, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(1), Part 2 Sp. Iss. SI, 01AD07, Part 2 Sp. Iss. SI, JAN 2011  

630.          Tsai, C.F., Su, Y.K., Lin, C.L., “Improvement in the Light Output Power of GaN-Based Light Emitting Diodes by One-Step Current Blocking Design”, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(1), Part 2 Sp. Iss. SI, 01AD05, Part 2 Sp. Iss. SI, JAN 2011 

631.          Hsu, H.C., Su, Y.K., Huang, S.J., Cheng, S.H., Cheng, C.Y., “Improvement of a-plane GaN crystalline quality by overgrowth of in situ etched GaN template”, JOURNAL OF CRYSTAL GROWTH, 315(1), Sp. Iss. SI, 192-195, JAN 15 2011   

632.          Hsu, H.C., Su, Y.K., Huang, S.J., Tseng, C.Y., Cheng, C.Y., Chen, K.C., “Enhanced Performance of Nitride-Based Blue LED With Step-Stage MQW Structure”, IEEE PHOTONICS TECHNOLOGY LETTERS, 23(5), 287-289, MAR 1, 2011

633.          Chen, C.J., Wang, R.L., Su, Y.K., Hsueh, T.J., “ A Nanocrystalline Silicon Surface-Passivation Layer on an HR-Si Substrate for RFICs”, IEEE ELECTRON DEVICE LETTERS, 32(3), 369-371, MAR 2011  

634.          Hsu, H.C., Su, Y.K., Huang, S.J., Chuang, R.W., Cheng, S.H., Cheng, C.Y., “Effects of Trimethylgallium Flow Rate on a-Plane GaN Growth on r-Plane Sapphire during One-Sidewall-Seeded Epitaxial Lateral Overgrowth”, APPLIED PHYSICS EXPRESS, 4(3), 035501, MAR 2011  

635.          Peng, S.M., Su, Y.K., Ji, L.W., Young, S.J., Wu, C.Z., Cheng, W.B., Chao, W.C., Tsai, C.N., “Photosensitivity of Field-Effect Transistors Based on ZnO Nanowire Networks”, IEEE ELECTRON DEVICE LETTERS, 32(3), 339-341, MAR 2011

636.          Fu, Y.K., Jiang, R.H., Lu, Y.H., Chen, B.C., Xuan, R, Fang, Y.H., Lin, C.F., Su, Y.K.,Chen, J.F., “The effect of trimethylgallium flows in the AIInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy”, APPLIED PHYSICS LETTERS, 98(12), 121115, MAR 21 2011   

637.          Tu, M.L., Su, Y.K., Wu, S.S., Guo, T.F., Wen, T.C., Huang, C.Y., “Violet electroluminescence from poly(N-vinylcarbazole)/ZnO-nanrod composite polymer light-emitting devices” , SYNTHETIC METALS, 161(5-6), 450-454, MAR 2011    

638.          Peng, S.M., Su, Y.K., Ji, L.W., Young, S.J., Tsai, C.N., Chao, W.C., Chen, Z.S., Wu, C.Z., “Semitransparent Field-Effect Transistors Based on ZnO Nanowire Networks”, IEEE ELECTRON DEVICE LETTERS, 32(4), 533-535, APR 2011

639.          Peng, S.M., Su, Y.K., Ji, L.W., Young, S.J., Wu, C.Z., Tsa,i C.N., Chao, W.C., Cheng, W.B., “Photoelectrical and Noise Characteristics of ZnO Nanowire Networks Photosensor”, IEEE SENSORS JOURNAL, 11(5), 1173-1177, MAY, 2011

640.          Kao,C. C., Su, Y. K., Lin, C. L., and Chen, J. J., “Enhanced Luminescence of GaN-Based Light-Emitting Diodes by Selective Wet Etching of GaN/Sapphire Interface Using Direct Heteroepitaxy Laterally Overgrowth Technique,” Displays., 32(96-99), 2011

641.          Peng, S.M., Su, Y.K., Ji, L.W., Young, S.J., Tsai, C.N., Hong, J.H., Chen, Z.S., Wu, C.Z., “Transparent ZnO Nanowire Networks Ultraviolet Photosensor”, IEEE TRANSACTIONS ON DEVICES, 2011(Accepted)

642.          Kao, C. C. Su, Y.K., Lin, C. L. “Enhancement of Light Output Power of GaN-Based Light-Emitting Diodes by a Reflective Current Blocking Layer” IEEE PHOTONICS TECHNOLOGY LETTERS, 23(14) 986-988, JUL 15, 2011

643.          Chen, K. C. Su, Y.K., Lin, Chun-Liang“Laser Scribing of Sapphire Substrate to Increase Side Light Extraction of GaN-Based Light Emitting Diodes” JOURNAL OF LIGHTWAVE TECHNOLOGY,  29(13) 1907-1912, JUL 1, 2011

644.          Tsai,  C. F, Su, Y. K., Lin, C. L., “Further improvement in the light output power of InGaN-based light emitting diodes by reflective current blocking design”, 26, 095013, 2011

 

(B) Conference Papers

 

1.                Y.K. Su, T.S. Wu and T.Y. Huang (1976)"Electrical and Optical Properties of CdS-Cu2S Heterojunction Prepared by Solution Spray Technuque", Proc. 1st IEEE ROC Symposium on Electronic Devices and Materials, pp.210-224 (1976)

2.                Y.K. Su, C.C. Wei and J.N. Chi (1976) "Preparation and Electric Properties of (Cd1-xZnx) As2 Thin Film Magnetoresistance Materials", Proc. IEEE ROC Symposium on Electronic Dvices adn Materials, pp.235-243 (1976)

3.                Y.K. Su, T.S. Wu and T.Y. Huang (1977) "The Photovoltaic Properties of CdS-CuS Thin-Film Solar Cells", Proc. 3rd Symposium on Electronic Devices and Materials, pp. A25-30 (1977)

4.                Y.K. Su, T.S. Wu, C.Y. Chang and J.K. Huang (1978) "Zn Diffusion in GaAsP LEDs", Proc. 4th Symposium on Electronic Devices and Matreials, pp. A38-44 (1978)

5.                Y.K. Su, C.J. Chang and T.S. Wu (1978) "Design Consideration of High Efficency Low Noise Silicon PIN Avalance Photodiodes", Proc. 4th Symprosium on Electronic Devioces and Materials, pp. B9-B16 (1978)

6.                Y.K. Fang and Y.K. Su and C.Y. Chang (1979) "A New Method of Analyzing Contact Resistance of Various Shapes", Proc. of 156th Meeting of the Electrochemical Society, L.A. California (1979)

7.                Y.K. Su, C.C. Wei and J.N. Chi (1979) "Magnetroresistive Properties of Thin Film (Cd3-xZx) As2 Materials", Proc. of IEEE Electrical/Electronic Insulation Confference, Boston, Massachusetts (1979)

8.                Y.K. Su, T.S. Wu and C.Y. Chang (1979) "A Low Cost Ceramic Cu S-CdS Solar Cells", Proc. of IEEE Electrical/Electronic Insulation Confference, Boston, Massachusettes (1979)

9.                C.Y. Chang, Y.K. Su, L.G. Chen and T.S. Wu (1981) "Characterization of GaAs Epitaxial Layer by Low Pressure MOCVD Using TEG as Ga Source", Proc. of International Confference (1981)

10.            Y.K. Su, C.J. Chang and T.S. Wu (1981) "Magnetroresistive Properties of CdZnAs Compound Semiconductors", Proc. of 159th Meeting of the Elecrochemcial Society, Minneapolis.  Minnesota, pp.876-877 (1981)

11.            C.Y. Chang, Y. K. Su and T.S. Wu (1981) "Properties of GaAs Epilayer Grown by Low Pressure MOVPE", Proc. Of Electronic Materials Conference, UC Santa Barbara, California (1981)

12.            Y.K. Su (1981) "Growth and properties of GaP/Si Device by MOCVD", Proc. of 8th International Conference on CVD, Gcuvex, France, pp.387-392 (1981)

13.            Y.K. Su, C.Y. Chang and T.S. Wu (1981) "The Characterizzation of CdS-CuS Thin Film Heterojuction", Proc. of IEEE Electrical/Electronic Insulation Conference, Rosemont, Illinois, pp.318-321 (1981)

14.            C.Y. chang, Y.K. Su, Y.H. Wang and W.C. Liu (1981) "Design Considerations for MBE Growth Chamber", Proc. of International Optoelectronics Workshop, pp.124-138 (1981)

15.            Y.K. Su, C.J. Chang, T.S. Wu and Y.H. Wang (1981) "The Fabrication and Properties of PIN Laser Detectors", Proc. of International Optoelectronics Workshop, pp.249-258 (1981)

16.            M.K. Lee, C.J. Chang, Y.K. Su and T.S. Wu (1981) "Properties of Sn-Doped GaAs Epitaxial Layers by Low Pressure MOCVD", Proc. of Internation Optoelectronics Workshop, pp.269-279 (1981)

17.            Y.K. Su, C.J. Chang and Y.H. Lee (1982) "The Study on Si Research-Through Avalanche Photodiodes", Proc. of Electronics Devices and Materials Conference, pp.1-4 (1982)

18.            Y.K. Su, T.S. Wu and C.Y. Chang (1982) "Two Region Associated with Transverse Field Charactreistics Model of Electronics Devices and Matreials Conference, pp.5-16 (1982)

19.            L.G. Chen, C.J. Chang, Y.K. Su and T.S. Wu (1982) "Computer Model of an Injection Laser with Strip Geometry", Proc. of Electronics Devices and Materials Conference, pp.404-410 (1982)

20.            S.L. Lu, Y.K. Su and C.C. Wei (1982) "Tin-Doped GaAs Thin Film Grown by LPE and its Application", Proc. of Electronics Devices and materials Conference, pp.473-478 (1982)

21.            M.K. Lee, C.J. Chang, Y. K. Su and T.S. Wu (1982) "A Method for Growing Sn-Doped GaAs Epilayers by Low Pressure MOCVD", Proc. of Electronics Devices and Materials Conference, pp.479-482 (1982)

22.             Y.K. Su, C.J. Chang and Y.H. Wang (1982) “Characterization and Growth of InGaAsP Epilayers on InP Substrate", Proc. of 162nd Meeting of the Electrochemcial Society, Detroit, Michigen, Vol.82-2, pp334-335 (1982)

23.            Y.K. Su (1982) "Sn-Doped GaAs Epilayers Grown by Low Pressure MOCVD", Proc. of 162nd Meeting of Electrochemcial Society, Detoit, Michigen, Vol.82-2, pp. 339-340(1982)

24.            Y.K. Su, C.C. Wei, S.C. Lu (1982) "LPE Growth of GaAs and its Application", Proc. of 162nd Meeting of the Electrochemcial Society, Detroit, Michigen, Vol.82-2, pp. 336-337(1982)

25.            Y.K. Su, M.C. Wu and C.Y. Chang (1983) "Thin Film of InGaAsP Grown by LPE", Proc. of III-V Meeting, May (1983)

26.            Y.K. Su, Y.F. Lee and C.Y. Chang (1983) "Fabrication and Properties of the Conference on Laser and Electro-Optics (CLEO) Baltimore, pp.222-223 (1983)

27.             Y.K. Su, M.C. Wu and T.S. Wu (1983) "LPE Growth of InGaAsP Thin Film ", The fifth Annual Science, Engineering and Technology Seminars Record, houston, TX, pp.314-318 (1983)

28.            M.C. Wu, Y.K. Su and C.Y. Chang (1983) "Growth and Characterization of Lattice-Matched Epitaxial Film of InGaAsP/InP and InP/InP by LPE", Proc. of Electronic Devices and Materials Symposium, pp.314-318 (1983)

29.            Y.C. Chou, Y.K. Su, M.C. Wu and C.Y. Chang (1983) "H2Se Doping Characteristics of GaAs by Low pressurre MOCVD", Proc. of Electronic Devices and Materials Symposium, pp406-412 (1983)

30.            C.Y. Chang, Y.K. Su, M.K. Lee, Y.C. Chou and L.P. Chen (1984)"Growth Mechanisms of GaAs-LPMOCVD Growth", Proc. of Electronic Devices and materials Symposium, pp.297-299 (1984)

31.            Y.K. Su, Y.C. Chou and T.S. Wu (1984) "Growth of P-type GaAs by MOCVD", Proc. of Annual Convention of Chinese Institure of Materials Science, pp.385-400 (1984)

32.             Y. K. Su, Y. F. Lee and C. Y. chang (1985) "Design Considerations for PIN and Rearch-Throgh Avalance photodiodes", Internation conference "modelling an Simulation", Gorakhpur, India, Dec(1985)

33.            Y. K. Su, S. C. Chen and J. S. Tzeng (1985) "Simulation Analysis of Ion-sensitive Field Effect transistors", Intrenational Conference "Modelling an Simulation", Gorakhpur, India, Dec (1985)

34.            M.C. Wu, Y.K. Su and C.Y.Chang (1985) "Study of Epitaxial Growth of InGaP Thin Film", Proc. of Electeonic Devices and materials Syposium, pp.232-235 (1985)

35.            Y.  K. Su, S. C. Chen and J. S. Tzeng (1985) "Ion-SenSitive Field Effect Transitors with Silicon Nitrite Gate for PH Sensing", Proc. of Electronic Devices and Materials Symposium, pp. 45-48 (1985)

36.            Y. K. Su, M. C. Wu, C. Y. Chen and K. Y. Chen (1986) "Photoluminesence Study of the InGaP Epilayer Grown by LPE", Proc. of Electronic Devices and Materials Symposium, pp.85-88 (1986)

37.            Y. K. Su, C. Y. Chen, Y. C. Chou and M. K. Lee (1986) "Optimozation of Growth Conditions for Low Pressure Triethygallium Source Matel-Organic Chemical Vaper Deposition", Proc. of ECS SOTAPOCS IV, Boston, Ma. (1986)

38.            Y.K. Su, M.C. Wu and C.Y. Chen (1986) "The Growth High Purity InGaP on GaAs by Liquid Phase Epitaxy", Proc. of ECS SOTAPOCS IV, Boston, MA.(1986)

39.            Y. K. Su, M. C. Wu, C. Y. Chang and K. Y. Cheng (1986) "Material Quality and Device Characteristics of LPE Grown InGaP and InGaAsP Devices", Extended Abstracts of ECS Compound Semiconductor Science and Technology, pp.88-91 (1986)

40.            Y. K. Su, C. C. Chang, C. C. Wei and H. C. Tseng (1986) "The Growth Rate and Electrical Characteristics Analysis of P-typed ZnSe Epilayer on GaAs Substrate", Proc. of State-of-the-Art Program on Compound Semiconductors (SOTAPOCS V), San Diego (1986)

41.            Y. K. Su, M. C. Wu and C. Y. Chang (1986) "Growth and Characterization of AlGaAs/InGaP Heterojuction Electroluminescent Diodes", Proc. of State-of-the-Art Program on Compound Semiconductors (SOTAPOCSV), San Diego, CA (1986)

42.            T. T. Su, Y. K. Su and C. Y. Chang (1986) "1.3 μm InGaAsP/InP DH Laser Grown by Liquid Phase Epitaxy", Proc. of Electronic Devices and Materials Symposium, pp. 133-137 (1986)

43.            Y. K. Su, M. C. Wu, C. Y. Chang and K. Y. Cheng (1986) "AlGaAs/InP Heterostructure Luminescent Device Application", Proc. of Electronic Devices and Materials Symposium, pp.162-166 (1986)

44.            Y. H. Wang, Y. K. Su and M. P. Houng (1986) "The Fabrication of InGaAs Homojuction Photodiode", Proc. Of Electronic Device and Materials Symposium, pp.176-179 (1986)

45.            Y. K. Su, T. A. Dai and S. C. Chen (1987) "InGaAs/InP Modulation-Doped Heterostructures Grown by LPE", Proc. of 10th Chemical Vaper Deposition, Honolulu, Hawaii, pp.577c (1987)

46.            C. S. Laih and Y. K. Su (1986) "Tandem and Route Diversity System Design on 20 GHz Band Ratio Relay Links in Taiwan", Proceedings of 1986 Telecommunication Links in Taiwan, pp.247-252 (1988)

47.            C. C. Wei, Y. K. Su, C. C. Cheng and C. C. Hsu (1986) "The Growth of ZeSe Single Crystal by Cloth Tube Method", Proc. of Electron Devices and Materials Synposium pp. 375-379 (1986)

48.            Y. K. Su, C. C. Chang and C. C. Wie (1987) "Vaper Phase Epitaxial Growth of ZnSe Epilayer on GaAs Substrate", Proc. of State-of-the-Art Program on Compound Semiconductor, (SOTAPOCS VII), Honolulu, hawaii, Vol. 134, No.8-B (1987)

49.            T. L. Chen,Y. K. Su and S. C. Chen (1987) "1.2μm InGaAsP/InP Buried Crescent Heterostructure Laser Diodes Grown by Liquid Phase Epitaxy", Proceedings of Electron Devices and Materials Symposium, pp. 1-4(1987)

50.            T. A. Dai, Y. K. Su and S. C. Chen (1987) "InGaAs/n-InP Modulation-Doped Heterostructure Grown by Liquid Phase Epitaxy", Proceeding of Electron Devices and Mereial Symposium, pp.16-19 (1987)

51.            M.C. Wu, Y.K. Su and C.Y. Chan g(1987) "High Purity InGaP Grown on GaAs by Liquid Phase Epitaxy", Proceeding of Electron Devices and materials Symposium, pp.64-66 (1987)

52.            S. L. Chen, Y. K. Su and C. T. Lee (1987) "The Surface Acoustic Wavee Devices on InP Substrate ", Proceeding of Electron Devices and Materials Symposium, pp.58-63 (1987)

53.            Y. K. Su, C. C. Wei, C. C. chang and J. D. Wu (1987) "The ZnSe Epilayer on GaAs Subtrates by Vaper Phase Epitaxy", Proceedings of Electron Devices and Materials Symposium, pp.86-90 (1987)

54.            C.S. Laih, L. Har, J.Y. Lee and Y.K. Su (1988) "An Improved Knapsak Public-Key crytosystem", to be Presented in 1988 IEEE International Symposium on Information Theory, Kobe, Japa (1988)

55.            Y. K. Su, C. H. Huang and B. S. Chiu (1988) "Electrical and Optical Properties of InGaAsP/InP Layers", Proceeding of The 1989 Annual Conference of the Chinese Society for Materials Science, pp.62-64 (1988)

56.            Y. K. Su, C. C Wei and C. C. Chang (1988) "The Characterization of ZnSe Single Crystal Grown by Sublimation Growth", Proceeding of The 1989 Annual conference of the Chinese Society for Materials Science, pp.37-41 (1988)

57.            S. C. Chen, Y. K. Su and F. S. Juang (1988) "Properties of GaAlsb Epilayer Grown by Liquid Phase Epitaxy", Proceeding of The 1989 Annual Conference of the Chinese Society for Materials Science, pp.42-45 (1988)

58.            C. C. Cheng, Y.K. Su, C. C. Wei and F. J. Huang (1988) "The Effect of Epilayer Thickness on the Electric Properties of P-ZnSe Epilayer onto GaAs Substrates", Proceeding of The 1988 International Electronic Devices and Materials Symposium, pp.248-253 (1988)

59.            Y.K. Su, F.S. Juang, T.L. Chen and W.C. Tsai(1988) "Study and Fabrication of the 1.3μm InGaAsP/InP Crescent Shaped Buried Heterostructure and DCPBH Laser Diodes", Proceeding of The 1988 Annual Conference on Optical Engineering, p.48 (1988)

60.            F. S. Juang, Y. K. Su and S. C. Chen (1989) "The Study Electric Characteristics of Al/n-GaSb Contacts", Proc. of The Annual Conference of the Chinese Society for Materials Science, pp.1105-110 9(1989)

61.            Y. K. Su, S. C. Chen, G. S. Yeh and C. R. Lee (1989) "The Study of GaSb Photoluminescent Properties", Proc. of The 1989 Annual Cinference of the Chinese Society for Materials Science, pp1099-1103 (1989)

62.            Y.K. Su and S. L. Chen (1989) "Effect of R. F. Sputtering Parameters on ZnO Films Deposited onto InP Substrates", The International Congress on Optical Science and Engineering, SPIE vol. 1125 Thin Film in Optics, pp.29-35 (1989)

63.            K.T. Lan, S.S. Bor, P.C. Chen, Y.K. Su and J.Y. Lee (1989) "Radar Cross Section of a Rotating Rectangular Metal Plate by High Frequency Methods",1989 International Symposium on Antennas and  Propagation, Tokyo, Japan.

64.            Y. K. Su (1989) "Fabrication of Long Wavelength Laser Diodes" (Invited Talk), 1989 Electron Devices and Materials Circuit Technology Symposium, pp.1-10 (1989).

65.            C. J. Huang and Y. K. Su (1989) "The Studies of SiO/InP Structure Prepared by Photo-CVD", 1989 Electron Devices       and Materials Circuit Technology Symposium, p.444-447 (1989).

66.            Y. K. Su, S. C. Chen and G. K. Yeh (1989) "The Fabrication of InP/InGaAsP/InP Double Heterojunction Bipolar Transistors", 1989 Electron Devices and Materials Circuit Technology Symposium, p.448-453 (1989).

67.            C. J. Huang and Y. K. Su (1990) "Research od SiO2/InP Structure Prepared by Photo-CVD", The Second Workshop on Radiation-Induced and/or Process-Related Electrically active Defects in Semiconductor-Insulator Systems,      pp.310-315 (1989),Rayleigh,  North Caralina.

68.            Y. K. Su, N. Y. Li, F. S. Juang and S.c. Wu (1990) "The Effects of Surface States and Annealing Temperature on Barrier Height of Matels/n-GaSb Schottky Diodes",Proceedings of State-of-The-Art program on Compound Semiconductors (SOTAPOCSXII) pp. 232C (1990), Qebec, Canada.

69.            Y.K. Su,S.C. Shei and J.C. Lin(1990) "Fabrication of Acousto-Optic Modulators on GaAs Substrates", Internation Conference on Optoelectronic Science and Engineering '90, pp.10-13(1990), Beijing, China.

70.            Y.K. Su, K.J. Gan, F.S. Juang and C.H. Huang (1990) "Characterization of Si-Implanted GaSb",VIII International Conference on Implantation, p. E-95(1990), Surey, England.

71.            Y.K. Su and F.S. Juang(1990) "Undoped GaSb Growth by MOCVD", 1990 Fall Meeting of Material Research Society, Boston, Massachusetts.

72.            H.Y. Ueng, S.M. Chen and Y.K. Su (1990) "The Growth Mechanisms of GaSb Epitaxial Film by MOCVD", 1990 Fall Meeting of Material Research Society, Boston, Massachusetts.

73.            Y. K. Su, F.S. Juang, T.S. Wu, N.Y. Li and K.J. Gan (1990) "Growth and Characterization of Undoped GaSb on GaSb and GaAs Substrates", 1990 International Electron Devices and Materials, pp.80-83, Hsinchu, Taiwan, R.O.C.

74.            C.H. Chen, Y.K. Su and R.L. Wang (1990) "Fabrication of InGaAs(P)/InP Double  Heterojunction Bipojar Transistor, ibid, pp.203- 205, Hsinchu,Taiwan,R.O.C.

75.            T.S. Wu, Y.K. Su, F.S. Juang, N.Y. Li and K.J. Gan (1990) "Epilayer Properties of GaSb Grown by Low Pressure MOCVD", SPIE's International Conference on Physical Concepts for Novel Optoelectrical    Device Applications, Aachen, Federal Republic of Germany (1990).

76.            Y. K. Su (1990) "The Study of GaSb-Based Compound Semiconductors", 6th RSA/ROC Binational Sym-ponsium, Electronic Materials and Devices, Port Elizabeth South Africa, July (1990)

77.            Y.K. Su, R.L. Wang, Y.H. Wang and K.F. Yarn (1990) "A Novel Negative Differential Resistance in Delta-Doping Induced Homojunction Double-Barrier Quantum Well Diode", Devices Research Conference, Santa Barara, CA, USA. June 25-27(1990)

78.            R.L. Wang, Y. K. Su and Y.H. Wang (1990) "Negative Differential Resistance in A Novel GaAs Delta-Doping Tunneling      Diode", The 22nd Confefence in Solid State Devices and Materials. B1-1-4, pp.27-29.Aug 22-24, Japan (1990)

79.            Y.K. Su, S.M. Chen H.Y. Ueng (1990) "The Growth Mechanisms and Defect Structure of GaSb Compound Grown by MOCVD", Proceedingof Electron Device and Materials Sumposium, pp.408-411 (1990)

80.            T.S. Wu, Y.K. Su, F.S. Juang, N.Y. Li and K.J. Gan(1991) "Ohmic and Schottky Contacts to GaSb",International Conference on Thin Film and Applications,Shanghai,China,,15-17 April (1991).

81.            H.Y. Ueng, Y.K. Su, S.M. Chen and F. S. Juang (1991) "The Growth Mechanisms and Stiochiometric Properties of GaSb Compound Grown by MOCVD", International Conference on Advanced Materials, ICAM 91,E-MRS 1991 Spring Meeting, A3, VII.2, STRASBORG, France, May, 28-31(1991).

82.            Y.K. Su, C.T. Hsu, J.W. Li, C.S. Liu and M. Yokoyama (1991) "The Effect of Insulators on AC Thin Film Eletroluminescent Devices", Proc. of 4th Vacuum Science Technology, Taiwan, December (1991)

83.            Y.K. Su, C.T. Hsu, J.W. Li, C.S. Liu and M. Yokoyama (1991) "The Emission Center of Green Thin Film Electroluminescent Devices", Proc. of 4th Vacuum Science Technology, Taiwan, December (1991)

84.            Y.K. Su and F.S. Juang (1991) "GaSb and InxGa1-xSb Epitaxy Growth by Low Pressure MOCVD", Proceedings of the Annual Conference of the Chinese Society for Material Science, Taiwan, pp.354-357 (1991)

85.            S.C. Chen and Y.K. Su (1991) "Fabrication of InGaAs(P)/InP Heterojunction Bipolar Transisters", ibid, pp.452-457(1991)

86.            C.J. Huang, Y.K. Su, C.R. Tuan and F.M. Pan (1991) "Composition and Electrical Properties of Si MOS Strusture Prepared by Direct Photo- Chemical Vapor Deposition using Detrium Lamp", Proceedings of Electron Device and Materials Symbosium, pp.143-147(1991)

87.            Y.K. Su, T.S. Wu and F.S. Juang(1991) "Growth and Characterization of InGaSb Heteroepitaxy on GaSb", Proceedings of Electron Device and Materials Symposium, pp.297-300 (1991)

88.            Y.K. Su, S.M. Chen and H.Y. Ueng (1991) "Growth and Mechanisms and Defect Structure of GaSb Compounds Grown by    MOCVD", Proceeding of Electron Device and Materials Symposium, pp.301-304(1991)

89.            R.L. Wang, Y.K. Su and Y.H. Wang (1991) "Negative Differential Resistance in GaAs Double Barrier Quantum Well Homostructure", Proceeding of Electron Device and Materials Symposium, pp.408-411 (1991)

90.            Y.K. Su, F.S. Juang and T.S. Wu (1991) "GaSb/InGaSb Strain Layer Quantum Wells", Proceedings of Electron Devices and Materials Symposium, pp.412-415(1991)

91.            Y.K. Su and J.D. Lin (1991) "N-Channel HgCdTe MOSFET", 1991 Compound Semiconductor Workshop, pp.34 (1991)

92.            C.J. Hwung and Y.K. Su (1991) "Researchs of SiO2 on InSb Structures", 1991 Compound Semiconductor Workshop, p.35 (1991)

93.            F.S. Juang, Y. K. Su and C.H. Su (1991) "The Study of Electrical and Optical Properties of GaSb/InGaSb Epilayers Grown by MOCVD", 1991 Compound Semiconductor Workshop, p.37 (1991)

94.            Y.K. Su and S.M. Chen (1991) "The Grownth Mechisms and Defect Structure of GaSb Compound Grown by MOCVD", 1991 Compound Semiconductor Workshop, p.40 (1991)

95.            Y. J. Juang and Y.K. Su (1991)"Reactive Ion Etching of GaAs/AlGaAs by C12/BC13 Mixed Gases", 1991 Compound Semiconductor Workshop

96.            S. C. Shei Y. K. Su and J. C. Lin (1991) "Effect of Surface Acoustic Wave Propagation on Varios ZnO/GaAs Structure Prepared by Sputtering Deposition", 1991 Compound Semiconductor Workshop, p.87 (1991)

97.            C. J. Hwang and Y. K. Su (1991) "Researches of SiO2 on InSb Structures", 1991 International Semiconductor Devices Research Symposium (1991)

98.            C. J. Hwang, Y. K. Su and R. L. Lue (1991) "Studies of InSb Matel Oxide Semconductor Structure Fabrication by Photo-CVD Using Si2H6 and N2O", Proceeding of International conference on Thin Film Physics and Application, pp.70-73 (1991)

99.            C.T. Hus, J.W. Li, C.S. Liu, Y.K. Su, T.S. Wu and M. Yokoyama(1991) "ZnS:Mn Thin Film Electroluminescent Display Devices using hanfnic Dioxides ass Insuulating Layer ", Proceeding Of international Conference on Thin-Film Physics and Apllications

100.        Y. K. Su and R. L. Wang (1992) "Electronic Property and Device Application of a Delta-Doped Layer", 1992 Proceeding of   Chinese Physical Society, p.101 (1992)

101.        C. J. Hwang, Y. K. Su, D. Lin and M. Yokoyama (1992)"Compositional and Electical properties of Si MOS Structure prepared by Direct Photo-CVD Using Deuterium Lamp", VLSI Workshop Between Industry and University, p.26 (1992)

102.        Y.K. Su, F. S. Juang and T. s. Wu (1992)"GaSb/InGaSb Strain Layer Quantum Wells", Internatioal Conference on Signals, Electronic, and System, Cario, Egypt (1992)

103.        Y. K. Su and C. J. Huang (1992) "SiO2 on InP and GaAs Prepared by Photo-CVD", The Second International Symposium on the Physics and Chemstry of SiO2 and the Si/SiO2 Interface, St.Louis, Missouri (1992)

104.        Y. K. Su, S. M. Chen and F. S. Juang (1992) "Stoickiometric Properties of GaSb Compounds Grown by Low Temperature MOCVD", 1st Pacific Rim international Conference on Advanced Materials and Proceeding, Hangzhou, China (1992)

105.        K. C. Huang, Y. K. Su and S. M. Chen (1992) "Grown and Characterization in GaSb Heteroepitaxy on GaAs by MOCVD', 1st Pacific Rim International Conference on Advanced Materials and Proceeding, hangzhou, China (1992)

106.        C. T. Hus, Y. K. Su, T. S. Wu and M. Yokoyama (1992) "Metalorganic Chemcal Vaper Deposition of ZnSe Thin Film on   ITO/glass Substrate", Sixth Internation Conference on Solid Films and Surface, Paris, France, June 29--July 3 (1992)

107.        C. T. HSu, Y. K. Su and M. Yokoyama (1992) "The Electroluminescent Devices with Different Insulatorr / Semiconductor Interfaces Prepared by rf-Sputtering ", Internation Symposium on Optoelectronic in Computers, communication, and Control, Hsinchu, Taiwan China, December 15-18(1992)

108.        Y. K. Su, R. L. Wang and H. H. Tsai (1992) "Negative Differential Resistance Homstructure Using Delta-Doped Technique", International Microwave and Communication conference Nanjinng, China (1992)

109.        T.S. Wu, Y. K. Su and R. L. Wang (1992) "Delta-Doped Triple-Barrier Switching Devices ", International Microwave and Communication Conference, Nanjing, China (1992)

110.        Y. K. Su, S. M. Chen and H. Y. Uengand F. S. Juang (1992) "The Growth Machanisms and Stichiometric Properties of GaSb   Compound Grown by MOCVD", NON-STOICHIOMETRY IN SEMICONDUCTOR, pp.179-184 (1992)

111.        J. W. Li, Y. K. Su and M. Yokoyama (1992) "The Crystallinity of ZnS Thin Film Prepared by MOCVD", at ICSFS-6 '92 Sixth Intern Conference on Solid Films and Surface, Paris, France, June 29--July 3(1992)

112.        J. W. Li, Y. K. Su and M. Yokoyama (1992) "Effects of Annealing on ZnS:TbF3 Electroluminescent Devices Prepared by  RF-Sputtering", at OOOC '92 Inter. Symp. on Optoelectronic in Computer , Communication and Control, Hsinchu, Taiwan , Dec. 16-18 (1992)

113.        C.T. Lin, Y. K. Su, C.J. Chang, and M. Yokoyama1992) "HgCdTe gate controlled photodiode passivated with SiO2 by using direct photo-CVD" The first conference on space science and technology (1992)

114.        Y. K. Su, C.J. Hwang, and C.T. Lin (1992) "Researches of SiO2 on InP and GaAs MOS Structures" 181st Meeting of the Electrochemcial Society in St. Louis, Missouri on May 17-22 (1992)

115.        T. S. Wu, Y. K. Su and S. M. Chen (1993) "Band Offset and Energy Shift with Elastic Strain in InGaSb Epilayer on GaSb(100) by MOCVD", Fifth Eurpean Workshop on MOCVD and Related Growth Techniques, Jun.2-4.1993, MACMO Sweden. (1993)

116.        Y. K. Su, S. M. Chen and T. S. Wu (1993) "High Quality Undoped n-typed GaSb Epilayer by Low Temperature MOCVD", International Symposium on Physical Concenpts and Materials for Novel Optoelectronics Devices Applications II, May 24-27, (1993), Triste Italy.

117.        Y. K. Su, S. M. Chen and C. F. Yu. (1993) "InGaSb/GaSb Strained-Layer Superlattice, Two-Mode Infrared Photodetector", Dielectric Science and Technology Electronics on the 184th Meeting of the Electrochemcal Society, Oct. 10-15 (1993) New Orlean U. S. A.

118.        C.T. Lin, Y. K. Su, C.J. Chang, M. Yokoyama and C.J. Hwang (1993)       "Gate controlled HgCdTe photodiodes passivated with SiO2 by using direct photo-CVD" The Second conference on space science and technology (1993)

119.        C.T. Lin, Y.K. Su, S.J. Chang, and M.Yokoyama (1993) " MOS Properties of HgCdTe deposited with SiO2 by using direct photo-CVD" 1993 Electronic Devices and Materials Symposium (1993)

120.        J. W. Li, J. D. Chiang, Y. K. Su and M. Yokoyama (1994) "Growth of Large Area ZnS Thin Films on ITO/Glass Substrate by Low Temperature Metalorganic Chemical Vaper Deposition", at The 1st Asian Symposium on Information Display, Hsin-Chu, Taiwan, Oct. 27-29, (1993).

121.        Y. K. Su, H. Kuan, P.H. Chang and S. W. Chiou (1994) "A Study of GaSb Schottky Contacts", at '94 TFPA Thin Film Physics and Application, Shangai, China, April. 15-17, (1994).

122.        H. Kuan, Y. K. Su and W. J. Tzou (1994) "High-quality InP epitaxial layers grown by MOCVD using Tertiarybuty-phosphine (TBP) source", International Conference onThin Film Physics and Applications, Shanghai, China, April.15-17, (1994).

123.        H. Kuan, S.C. Shei, W.J. Tzou and Y.K. Su(1994) "Study of GaInP/GaAs/GaInP single quantum well structure grown by MOCVD with photoreflectance and photoluminescence ",1994 spring Meeting of Materials Research Society, San Francisco, California U.S.A. April 2-4(1994)

124.        T.S. Wu, Y.K. Su and H. Kuan(1994) "Photoreflectance study of single quantum well Al0.3Ga0.7As/GaAs/ Ga0.5In0.5P structure grown by MOCVD technique", at'94 ICMPC, Kunming, China, Novermber 7-11,1994

125.        Y.K. Su and S.C. Shei (1994) "Heterostructure Fe:InP/InGaAs MESFET and InP MISFET prepared by MOCVD and Direct Photo-CVD", at '94 TFPA Thin Film Physics and Applications, Shanghai, China, April.15-17, 1994

126.        S.C. Shei, Y.K. Su, C.J. Hwang and M. Yokoyama (1994) "Heterostructure Fe:InP/InGaAs Schottky Contact and MOSFET", at '94 TFPA Thin Film Physics and Applications, Shanghai, China, April. 15-17,1994.

127.        M. Yokoyama, S. H. Su, J. W. Li and Y. K. Su, (1994) "Characteristics of indium-tin oxide thin film etched by reactive ion etching", 7th International MicroProcess Conference.

128.        S.H.Su, M.Yokoyama and Y. K. Su ,(1994), "Characteristics of ZnS Thin Film Etched by Reactive Ion Etching", 1994 International Conference on Electronic  Materials.

129.        S. H. Su, Lingjia Chen, Meiso Yokoyama and Y. K. Su, "The Study of Internal Charge and Current in AC Thin-Film       Electroluminescent Devices", the First International Conference on the Science and Technology of display phosphors, November 14-16, 1995, San Diego, California.

130.        Y.K. Su, D.F.Hwang, T.S.Wu and H.Kuan (1995) "Transition characterization in InGaAs/GaAs single quantum well by contactless electroreflectance spectroscopy", Electronic Devices and Materials Symposium July 6-7, Kaohsiung, Taiwan, R.O.C

131.        T.S.Wu, Y.K. Su and H.Kuan (1995) "Temperature dependence in InGaAs/GaAs double quantum well by contactless electroreflectance spectroscopy", Proceeding of the first radio science symposium Auguest 7-8, Kaohsiung, Taiwan, R.O.C (1995)

132.        C.H.Liu, N.C.Lin, M.Yokoyama and Y. K. Su (1995) "ALE of ZnS growth on (100)-Si subtrate by MOCVD ", The First International Conference on the Science and techology of Display Phosphors, Novermber 14-16,San Diego, California (1995)

133.        S.H.Su, S.X.Chen, M.Yokoyama and Y. K. Su (1995) "The study of ZnS:TbOF TFEL Devices with different stacked isulating layers ",The First International Conference on the Science and techology of Display Phosphors,Novermber 14-16,San Diego,California(1995)

134.        S.H.Su, S.X.Chen, M.Yokoyama and Y. K. Su (1995) "The study of internal charge and current in ACTFEL Devices ",The First International Conference on the Science and techology of Display Phosphors,Novermber 14-16,San Diego,California(1995)

135.        Y. K. Su, S.M.Chen and C.F.Yu (1995) "Normal incidence intersubband and interband optical transitions in GaSb/InAs Superlattic", 188th Meeting Chicao,Illnois-October 8-13,1995(1995)

136.        C.C.Yang, K.C. Huang, Y.K. Su and H.H. Tsai (1995) "Investigation of the influnce of the central barrier thickness and bandgap narrowing effect in InGaAs/InAlAs/InGaAs double quantum well resonant interband tunneling structures", Proceeding of International Conference Symposium on Surfaces and Thin Film, Page. 73, 27-30 March 1995, Taipei, Taiwan.

137.        C.C.Yang, K.C. Huang, Y.K. Su and R.L. Wang(1995) "The study of GaAs/InGaAs d-doping resonant interband tunneling        diodes",Proceeding of the First International Conference on Low        Dimensional Structure ＆ Devices, 8-10 May, 1995, Singapore.

138.        C.C.Yang, K.C. Huang, Y.K. Su and H.H. Tsai (1995) "The resonant interband tunneling phenomenon of pseudomorphic GaAs/InGaAs double quantum well diode", Proceeding of Seventh International Conference on Solid Films and Surfaces, pp 194-195, 12-16 December, 1994, Hsinchu, Taiwan.

139.        C.C.Yang, K.C. Huang, Y.K. Su and H.H. Tsai (1995) "The study of InGaAs/InAlAs double quantum well resonant tunneling microwave devices by varing InAlAs barriers thickness," Proceeding of 1995 International Laser, Lightwave and Microwave Conference, pp 77-80, 9-12 October, 1995, Shanghai.

140.        C.C.Yang, K.C. Huang, Y. K. Su, S.M. Chen, and W.L. Li (1995)       "Growth and Characteristics of InAs/GaAs Heterojunction and         Quantum Well," Proceeding of National Electron Devices and          Materials Symposium, pp. 196-199, 6-7 July 1995, Kaohsiung         Taiwan.

141.        Y.K. Su, C.T. Lin, H.T. Huang, S.J. Chang, T.P. Sun, G.S. Chen, and J.J. Luo (1995) "High Quality Stacked Photo Ehanced Native Oxide/CdTe for HgCdTe Passivation" 1995 2nd Chinese Optoelectronics Workshop (1995)

142.        C.W. Wang, T.J. Sheu, Y.K. Su, and M. Yokoyama (1995)       "Brightness Degradation and its Mechanism in Mn-doped ZnS Thin Film Electroluminescent Devices Grown by MOCVD" in semiconductor, Optical Fiber and Intetrated Optics Workshop, P.SO2-5-1, Dec. 16(1995)

143.        Y. K. Su, F. S. Juang and S. M. Chen, (1995) "The effects of buffer and cap-layer on long-wavelength transition energies in InAsSb/GaSb superlattices", Third International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications, 188th Meeting of the Electrochemical Society, Inc., Chicago, Illinois, October 8-13, 1995.

144.        S. H. Su, S. X. Chen, M.Yokoyama and Y. K. Su (1995), "The Study of ZnS:TbOF Thin Film Electroluminescent Devices with       Different Stacked Insulting Layers", the First International Conference on the Science and Technology of display phosphors, November 14-16 ,  1995, San Diego, California.

145.        Y. K. Su, C. Sun, S. C. Shei, and K.  J. Gan, " High-Frequency Equivalent Circuit Modeling of Fe:InP/InGaAs Metal-Semiconductor Field-Effect Transistor, " Ist Radio Science Symposium, Kaohsiung, Taiwan, R.O.C. August 7-8,(1995)

146.        K. J. Gan, S. C. Shei, Y. K. Su, Y. H. Hwang, and M. Yokoyama, "Semi-insulating Properities of Fedoped InP Grown by Metalorganic Chemical Vapor Deposition," 1995 Electronic Devices and Material Symposium, Kaohsiung, Taiwan, R.O.C., July 6-7, (1995)

147.        Kwang-Jow Gan, Dong-Shong Liang, and Yan-Kuin Su, "Research the Ohmic Contacts of AuGeNi to N-GaSb", The 10th Technological and Vocational Education, Taiwan, R.O.C., March, (1995)

148.        Y. K. Su, F. S. Juang and U. H. Liaw, (1996) ”Origins of 1/f Noise in Indium Antimonide Photodiodes”, Optoelectronics Technology Workshop, Photonics/Taiwan'96, FRB-C-4, pp.112-1141996).

149.        C.C.Yang, K.C. Huang, and Y.K. Su1996)"Investigation of the influence of the InGaAs relaxed layer in GaAs/InGaAs/InAs double quantum well resonant interband tunneling structure," be accepted by 1996 International Conference on Solid state Devices and Materials, 26-29 August, 1996, Japan.

150.        Y. K. Su, C.T. Lin, H.T. Huang, S.J. Chang, T.P. Sun, G.S. Chen, and J.J. Luo (1996) "Stacked ZnS/Photo Enhanced Native Oxide Passivation for long Wavelength HgCdTe Photodiodes" Eighth Internatonal Conference on Solid Films and Surface (1996)

151.        Y.K. Su, C.T. Lin, H.T. Huang, S.J. Chang, T.P. Sun, G.S. Chen, and J.J. Luo (1996) "Effect of Passivation and Extration Trap Density on the 1/f noise of HgCdTe Photoconductor Detector" 1996 IEEE International Conference on Semiconductor Electronics (1996)

152.        C.W. Wang, T.J. Sheu, Y.K. Su, and M. Yokoyama (1996) "The Study of Aging Mechanism in ZnS:Mn Thin Film Electroluminescent Devices Grown by MOCVD" Proceedings of 8th International Conference on Solid Films and Surfaces, July 1-5, (1996) Taipei Taiwan.

153.        C.W. Wang, T.J. Sheu, Y.K. Su, and M. Yokoyama (1996) "An Investigation of Deep Electron Trap at the different Insulator-Phosphor Interfaces in ZnS: TbOF ACTFEL Devices" Proceeding of 19th International Semiconductor Conference, P435, Oct. 9-12, 1996, Sinaia, Romania.

154.        C.W. Wang, T.J. Sheu, Y.K. Su, and M. Yokoyama (1996) "Deep Traps and Brightness Degradation on the Oxygen-rich Concentration in ZnS: TbOF Thin Film Electroluminescent Devices" Proceeding of 19th International Semiconductor Conference, P431, Oct. 9-12, 1996, Sinaia, Romania.

155.        C.W. Wang, T.J. Sheu, Y.K. Su, and M. Yokoyama (1996) "The Relationship between Brightness and Thickness of Oxygen-rich Phospheor Layer in ZnS: TbOF Thin Film Electroluminescent Devices", Accepted to be published in the Second International Conference on the Science and Technology of Display Phosphors, Nov. 18-20, (1996), San Diego, California, U.S.A.

156.        W.L. Li, Y.K. Su, S.J. Chang, and C.Y. Tasi (1996) "Low Beam Dispersion AlGaInP Visible Laser with Passive Waveguide", Photonics, Dec. 12-13,(1996), Taiwan.

157.        C.Y. Tasi, Y.K. Su, S.J. Chang, and C.S. Chang (1996) "High Performance 670nm AlGaInP/GaInP Strained Quantum well Laser", Photonics, Dec. 12-13, (1996), Taiwan.

158.        J.K. Lee, Y.K. Su, G.E. Su, C.Y. Lee, J.Y. Cheng, and S.J. Chang        (1996) "Electrical Properties of HgCdTe MOS Devices by Using Direct Photo Chemcial Vapor Deposition", Photonics, Dec. 12-13, (1996), Taiwan.

159.        C.T. Lin, Y.K. Su, S.J. Cahng, H.T. Huang, and S.M. Chang (1996)       "Model of Extraction Trap Density by 1/f Noise on HgCdTe Far         Infrared Photoconductive Detector", Photonics, Dec. 12-13 (1996),    Taiwan.

160.        Y.K. Su, F.S. Juang, and U.H. Liaw (1996) "Origins of 1/f Noise in Indium Antimonide Photodiodes", Photonics, Dec.12-13, (1996), Taiwan. 147. F.S. Juang, Y.K. Su, and G.J. Liu (1996)"Photoluminescence Spectra in InGaSb-GaSb Superlattices", Photonics, Dec.12-13, (1996), Taiwan.

161.        Y.K. Su, C.L. Lin, and S.M. Chen (1996) "Effect of InAs Sandwiching Layers on Optical Characterization in InAs/GaSb Superlattices", Photonics, Dec. 12-13, (1996), Taiwan.

162.        J. K. Sheu, Y.K. Su, S.J. Chang, M.J. Jou, C.C. Liu, C.C. Kuo ,S.S.        Ou, K. B. Lin, and G.C. Chi (1996) "Ion-implanted AlGaInP/GaInP MQW Laser Diode", International Electron Devices and Materials Symposia Dec. 16-20, (1996) Taiwan.

163.        C.S. Chang, S.J. Chang, Y.K. Su, P.T. Chang, Y.R. Wu, K.H.         Huang, and T.P. Chen (1996) "Chirped GaAs-AlAs Distributed Bragg Reflectors for High BrightnessYellow-Green Light-Emitting Diodes", International Electron Devices and Materials Symposia Dec. 16-20, (1996) Taiwan.

164.        J.K. Sheu, Y.K. Su, S.J. Chang, M.J. Jou, nd G.C. Chi (1996)       "Wafer-Bonded AlGaInP/GaP Orange Light-Emitting Diodes", International Electron Devices and Materials Symposia Dec. 16-20, (1996) Taiwan.

165.        C.Y. Tasi, Y.K. Su, and S.J. Chang (1996) "A New High Efficiency NIP GaInP Solar Cell", International Electron Devices and Materials Symposia Dec. 16-20, (1996) Taiwan.

166.        J.K. Sheu, Y.K. Su, S.J. Chang, M.J. Jou, C.C. Liu, C.C. Kuo,S.S. Ou,       K.B. Lin,G.C. Chi (1996) "Ion Implanted AlGaInP/GaInP Strained MQW laser diode", International Electron Devices and Materials Symposia Dec. 16-20, (1996) Taiwan.

167.        C.S. Chang, Y.K. Su, S.J. Chang, T.P. Chen, P.T. Chang, Y.R. Wu (1996) "Chirp GaAs/AlAs Distributed Bragg Reflectors for High Brightness Yellow-Green Light-Emitting diodes", nternational Electron Device and Material Symposia Dec. 16-20, (1996) Taiwan.

168.        J.K. Sheu, Y.K. Su, S.J. Chang, M.J. Jou, C.C. Liu, G.C. Chi (1996)       "Wafer-Bonded AlGaInP/GaP Orange Light-Emitting         Diodes",International Electron Devices and Materials Symposia Dec. 16-20, (1996) Taiwan.

169.        C.Y. Tsai, Y.K. Su, S.J. Chang, C.Y. Tsai (1996) "A New High Efficiency NIP GaInP Solar Cell", International Electron Devices and Materials Symposia Dec.16-20(1996)Taiwan.

170.        D.H. Jaw, C.L. Lin, J.R. Chang, S.M. Chen, Y.K. Su (1996) "Type II InAs/GaSb Superlattice Infrared Detector Grown by MOCVD", International Electron Devices and Materials Symposia Dec. 16-20, (1996) Taiwan.

171.        S.H. Su, M. Yokoyama, Y. K. Su (1996) "Etching of ZNS Thin Film by Reactive Ion Etching for Thin Film Electroluminescent  Devices",International Electron Devices and Materials Symposia Dec. 16-20, (1996) Taiwan.

172.        S. H. Su, M. Yokoyama and Y. K. Su, (1996) "Etching of ZnS thin film by reactive ion etching for thin film electroluminescent Devices", Dec.18~20, 1996, Hsin Chun, Taiwan, R O C.

173.        W. L. Li, Y. K. Su, S. J. Chang, and C. Y. Tsai, “Low Beam Dispersion AlGaInnP Visible Lasers with Passive Waveguide,” JCIEE’96, FRB-A-4, pp.84-86 (1996).

174.        Kwang-Jow Gan, Ruey-Lue Wang, and Yan-Kuin Su, "Piecewise-Linear Modeling of Current-Voltage Characteristics of Negative Differential Resistance Devices by Pspice Simulation, Kangsun, Kaohsiung County, Taiwan, R.O.C., June, (1996)

175.        Kwang-Jow Gan, Ti-Tasi Lin, Ruey-Lue Wang, Shih-Chang Shei, and Yan-Kuin Su, ”Study of SiO2/InP MOSFET Structure Prepared by Direct Photo-Chemical Vapor Deposition”, The I Ith Technological and Vocational Education, Kaohsiung, Taiwan, R.O.C., March, (1996)

176.        J. K. Sheu, Y. K. Su, S. J. Chang, M. J. Jou, and G. C. Chi,” Orange AlGaInP/GaP Light Emitting Diodes fabricated by Wafer Bonding,”Conference Proceeding of International Electron Devices and Material Symposium, Hsinchhu, Taiwan, R.O.C., p.211-p.214(1996).

177.        J. K. Sheu, Y. K. Su, S. J. Chang, C. C. Liu, S. S. Ou, C. C. Kuo, and G. C. Chi, ”Ion-implanted AlGaInP/GaInP MQW Laser Diodes, “Conference Proceeding of International Electron Devices and Material Symposium, Hsinchhu, Taiwan, R.O.C., p.167-p. 170(1996).

178.        Y. K. Su, F. S. Juang and U. H. Liaw, (1996) ”Origins of 1/f Noise in Indium Antimonide Photodiodes”, Optoelectronics Technology Workshop, Photonics/Taiwan'96, FRB-C-4, pp.112-114 (1996).

179.        F. S. Juang, Y. K. Su and G. J. Liu, (1996) ”Photoluminescence Spectra in InGaSb-GaSb Superlattices”, Optoelectronics Technology Workshop, Photonics/Taiwan'96, FRB-D-5, pp.135-137 (1996).

180.        Y. K. Su, W. L. Li, S. J. Chang, C. S. Chang, and C. Y. Tsai, “AlGaInP/GaInP Visible Lasers with Low Beam Dispersion,” Opto-Electronic Technology Conference, Tiwan, A1PO02, pp.20-23 (1997).

181.        M. Yokoyama, S.H. Su, and Y.K. Su (1997) "A 10-in Diagonal ZnS: Mn TFEL Panel Fabricated by a Sequential Vacuum Deposition Apparatus",Fourth Asian Symposium on Information Display, February 13-14, (1997), Hong Kong.

182.        C. T. Lin, Y. K. Su, H. T. Huang, S. J. Chang, T. P. Sun, G. S. Chen    (1997) "Stacked ZnS/Photo Ehance Native Oxide Passivation for Long Wavelength HgCdTe Infrared Photodiodes", Eighth International Conference on Solid Filmsand Surfaces,Tup-32,July(1997),Japan

183.        Y. Z. Juang, Y. K. Su, and S. J. Chang (1997) "Fabrication of GaInP/GaAs Heterojunction Bipolar Transistor Using All Slective Dry Etching Method", Eighth International Conference on Solid ilmsand Surfaces, Tup-33, July  (1997), Japan

184.        C.W.Wang, T.J.Sheu, Y. K. Su, and M.Yokoyama (1997)"The Study of Aging Mechanism in ZnS: Mn Thin-Film Electroluminescent Devices Grown by MOCVD", Eighth International Conference on Solid ilmsand Surfaces, Thp-16,July(1997),Japan

185.        C.W.Wang, T.J.Sheu, Y. K. Su, and M.Yokoyama (1997) "Brightness degradation and its mechanism in ZnS: TbOF thin film         electroluminescent devices fabriated by RF sputtering method ", Eighth International Conference on Solid ilmsand Surfaces, FrA- 3, July (1997), Japan

186.        S. H. Su, M. Yokoyama and Y. K. Su, (1997), "A 10-in' Diagonal ZnS: Mn TFEL Panel Fabricated by a sequential Vacuum Deposition Apparatus ", Fourth Asian Symposium on Information Display, Feb. 13-14. 1997, Hong Kong.

187.        Y. K. Su, W. L. Li, S. J. Chang, and C. Y. Tsai, “A Novel Waveguide Structure to Reduce Beam Divergence and Threshold Current in GaInP/AlGaInP Visible Quantum-Well Lasers,” JCIEE’97 (1997).

188.        Kwang-Jow Gan, Ti-Tasi Lin, Ruey-Lue Wang, Shih-Chang Shei, and Yan-Kuin Su, "Study of LowFrequency Noise in SiO2/InP MISFET Structure," The 12th Technological and Vocational Education, Taichung County, Taiwan, R.O.C., April, (1997.)

189.        F. S. Juang, Y. K. Su and G. J. Liu, (1997) ”Photoluminescence Spectra in InGaSb-GaSb Superlattices by Metal Organic Chemical Vapor Deposition”, Pacific Rim Conference on Lasers and Electro-Optics 1997 (CLEO/Pacific Rim'97), paper No. ThE5, Nippon Convention Center, Makuhari Messe, Chiba, Japan, 14-18 July 1997.

190.        Y. K. Su, F. S. Juang, and U. H. Liaw, “The Performance of InSb MOSFET”, 1997 Electronic Devices and Materials Symposium (EDMS), paper No. FA3.5, 國立中央大學, 19-21 Nov, 1997

191.        Y. K. Su, T. P. Sun, F. S. Juang, S. J. Chang and S. M. Chang, “HgCdTe Far Infrared Photodiodes”, submitted to1997Optoelectronics Technology WorkshopPhotonics/Taiwan'97, (1997).

192.        Y. K. Su and F. S. Juang, “HgCdTe far-infrared photodiodes”, 193rd Meeting of The Electrochemical Society – San Diego, California, May3-8, 1998, Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-eighth State-of-the-art Program on Compound Semiconductors, Electrochemical Society Proceedings, Vol.98-2, pp.97-108 (1998).

193.        J. K. Sheu, Y. K. Su, S. J. Chang, M. J. Jou, C. M. Chang, C. C. Liu and W. C. Hung, “High-transparency Ni/Au Ohmic Contact to P-Type GaN”, Proceeding of the 2nd International Symposium on Blue Laser and Light Emitting Diodes, Chiba, Japan, p.638-p.641 (1998).

194.        J. K. Sheu, Y. K. Su, S. J. Chang, M. J. Jou C. M. Chang, C. C. Liu and W. C. Hung, “Inductively Couple Plasma Etching of GaN using Cl2/N2 gases”, Conference Proceeding of International Electron Devices and Material Symposium, Hsinchhu, Tainan, Taiwan, R.O.C.,(1998)

195.        J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. C. Liu, C. M. Chang, W. C. Hung and I. Ping Huang, “Inductively Coupled Plasma Etching of GaN using Cl2/Ar/H2 gas”, International Electron Device Materials Symposia, NCKU Tainan, Taiwan, R.O.C., Dec.20-23 (1998)

196.        Ru-Chin Tu, Yan-Kuin Su, and Ying-Sheng Huang, "Temperature-dependent strain in high quality ZnTe grown on GaAs with ZnSe/ZnTe superlattices buffer layers," 2nd International Symposium on Blue Laser and Light Emitting Diodes (2nd ISBLLED), CHIBA, JAPAN, (1998).

197.        Ru-Chin Tu and Yan-Kuin Su, "Photoluminescence properties of Zn1-xMgxSe on tilted GaAs substrates by molecular beam epitaxy," 2nd International Symposium on Blue Laser and Light Emitting Diodes (2nd ISBLLED), CHIBA, JAPAN, (1998).

198.        Ru-Chin Tu and Yan-Kuin Su, "The Annealing Effects on ZnCdSe/ZnSe Quantum Wells and ZnSe/GaAs Interfaces," 2nd International Symposium on Blue Laser and Light Emitting Diodes (2nd ISBLLED), CHIBA, JAPAN, (1998).

199.        Ru-Chin Tu and Yan-Kuin Su, "Defect Suppression by ZnSe/ZnSSe strained-layer superlattices buffer layers at II-VI/GaAs interfaces of ZnCdSe/ZnSe/ZnMgSSe separate confinement heterostructures," 25th International Symposium on Compound Semiconductors (ISCS ‘98), NARA, JAPAN, (1998).

200.        Ru-Chin Tu, Ying-Sheng Huang, and Yan-Kuin Su, “Optical characterization of a Zn0.88Mg0.12S0.18Se0.82 epilayer on GaAs”, 2nd International Symposium on Blue Laser and Light Emitting Diodes (2nd ISBLLED), CHIBA, JAPAN, (1998).

201.        R. C. Tu, Y. K. Su, Y. S. Huang, and S. J. Chang, "Near-band-edge optical properties of MBE-grown ZnSe epilayers on GaAs by modulation spectroscopy," Photonic Taiwan ’98, TAIPEI, TAIWAN, SPIE Proceeding, Vol. 3419, 325 (1998).

202.        R. C. Tu, Y. K. Su, W. H. Lan, and F. R. Chien, "Structural and optical studies of ZnCdSe/ZnSe/ZnMgSSe separate confinement heterostructures with different buffer layers grown by molecular beam epitaxy," Tenth International Conferences on Molecular Beam Epitaxy (MBE-X), CANNES, FRANCE, (1998).

203.        R. C. Tu, Y. K. Su, Y. S. Huang, and F. R. Chien, "The structural and optical studies of high quality ZnTe grown on GaAs using ZnSe/ZnTe strained superlattices buffer layer by molecular beam epitaxy," Tenth International Conferences on Molecular Beam Epitaxy (MBE-X), CANNES, FRANCE, (1998).

204.        R. C. Tu, Y. K. Su, Y. S. Huang, and S. J. Chang, "Defect Suppression by ZnSe/ZnSSe strained-layer superlattices buffer layers at II-VI/GaAs interfaces of ZnCdSe/ZnSe/ZnMgSSe separate confinement heterostructures," 1998 International Electron Devices and Materials Symposia (IEDMS ‘98), TAINAN, TAIWAN, (1998).

205.        R. C. Tu, Y. K. Su, Y. S. Huang, and S. J. Chang, "The structural and optical studies of high quality ZnTe grown on GaAs using ZnSe/ZnTe strained superlattices buffer layer by molecular beam epitaxy," 1998 International Electron Devices and Materials Symposia (IEDMS ‘98), TAINAN, TAIWAN, (1998).

206.        Ru-Chin Tu, Yan-Kuin Su, and S. J. Chang, "The Annealing Effects on ZnCdSe/ZnSe Quantum Wells and ZnSe/GaAs Interfaces," 1998 International Electron Devices and Materials Symposia (IEDMS ‘98), TAINAN, TAIWAN, (1998).

207.        Ru-Chin Tu, Yan-Kuin Su, and Ying-Sheng Huang, "Defect Suppression by ZnSe/ZnSSe strained-layer superlattices buffer layers at II-VI/GaAs interfaces of ZnCdSe/ZnSe/ZnMgSSe separate confinement heterostructures," 1998 International Photonics Conference (IPC ‘98), TAIPEI, TAIWAN, (1998).

208.        Ru-Chin Tu, Yan-Kuin Su, and Ying-Sheng Huang, "The structural and optical studies of high quality ZnTe grown on GaAs using ZnSe/ZnTe strained superlattices buffer layer by molecular beam epitaxy," 1998 International Photonics Conference (IPC ‘98), TAIPEI, TAIWAN, (1998).

209.        Ru-Chin Tu and Yan-Kuin Su, "The Annealing Effects on ZnCdSe/ZnSe Quantum Wells and ZnSe/GaAs Interfaces," 1998 International Photonics Conference (IPC ‘98), TAIPEI, TAIWAN, (1998).

210.        Ru-Chin Tu and Yan-Kuin Su, "Photoluminescence properties of Zn1-xMgxSe on tilted GaAs substrates by molecular beam epitaxy," 1998 International Photonics Conference (IPC ‘98), TAIPEI, TAIWAN, (1998).

211.        Y. K. Su and F. S. Juang, "HgCdTe far-infrared photodiodes", 193rd Meeting of The Electrochemical Society-San Diego, California,May 3-8,1998, Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-eighth State-of-the-art Program on Compound Semiconductors, Electrochemical society Proceedings, Vol. 98-2, pp.97-108(1998).

212.        J.R. Chang, Y.K. Su, and C.L. Lin, “Characterization and thermal treatment of unstrained GaInAsSb/InP single-quantum-well structure,” Optics and Photonics Taiwan, Chung-Li, Taiwan, pp. 227-230, December 1999.

213.        L. W. Chi, H. H. Yu, F. S. Juang, Y. K. Su, K. T. Lam, and S. M. Chen, “The study of Fourier Transform Infrared Spectroscopy on 3-5 and 8-12�慆 InAsSb/GaSb Superlattices”, P1-68, Twelfth International Conference on Ternary and Multinary Compounds (ICTMC-12), September 27-October 1, 1999, National Tsing Hua University in Hsinchu, Taiwan.

214.        S. K. Saha, F. S. Juang, Y. K. Su, and S. H. Su, “Fabrication and Characteristics of Organic Light-Emitting Diodes”, pp. 99-102, 1999 Optoelectronics Technology Workshop, National Central University, Taiwan, 16-17 December 1999.

215.        Y. K. Su, G. C. Chi, J. K. Shu and F. S. Juang, “InGaN/GaN Multiple Quantum Wlees and Led Structure by MOCVD”, pp. 151-154, 1999 Optoelectronics Technology Workshop, National Central University, Taiwan, 16-17 December 1999.

216.        D. H. Jaw, W. H. Huang, C. L. Lin, and Y. K. Su, “The Fabrication and Study of InAs Sb/In As Infrared Photodetector Grown by MOCVD”, pp. 139-142, 1999 Optoelectronics Technology Workshop, National Central University, Taiwan, 16-17 December 1999.

217.        C. H. Ko, W. H. Lan, C. I. Chiang, C. C. Chen, S. J. Chang and Y. K. Su, “The Study of Ohmic Contacts to N- and P-type GaN”, pp. 301-304, 1999 Optoelectronics Technology Workshop, National Central University, Taiwan, 16-17 December 1999.

218.        W. L. Li, Y. K. Su, S. J. Chang and S. M. Chen, “A Measurement of Optical Confinement Factor”, pp. 423-426, 1999 Optoelectronics Technology Workshop, National Central University, Taiwan, 16-17 December 1999.

219.        Y. K. Su, J. G. Hsu and G. C. Chi, Invited Speaker, “Electrical and Optical Properties of GaN-Based Blue Light Emitting Diodes”, International Conference on Advanced Materials Science, June 23-28 Shanghai, China

220.        Y. K. Su, Invited Speaker, “Recent Rrend in Gan Light Emitting Diodes”, Aug. 11-14,Ottawa, Canada

221.        F. S. Juang, Y. K. Su, S. J. Chang, T. K. Chu, C. S. Chen, L. W. Chi, and K. T. Lam, “Effects of buffer layer growth conditions on the GaN epilayer quality by MOCVD”, Light-Emitting Diodes: Research, Manufacturing, and Applications IV, part of SPIE’s Symposium on Integrated Optoelectronics, 23-28 January 2000, San Jose, CA., U.S.A

222.        L. W. Chi, K. T. Lam, F. S. Juang, Y. S. Tsai, Y. K. Su, S. J. Chabg, C. C. Chen and J. K. Sheu, “Ohmic Contacts to GaN with Rapid Thermal Annealing”, Light-Emitting Diodes: Research, Manufacturing, and Applications IV, part of SPIE’s Symposium on Integrated Optoelectronics, 23-28 January 2000, San Jose, CA., U.S.A

223.        Y. K. Su, W. R. Chen, S. J. Chang, F. S. Juang, W. H. Land, A. C. H. Lin and H. Chang, “Long-wavelength shift of ZnSSe metal-semiconductor-metal light-emitting diodes with high injection currents”, Light-Emitting Diodes: Research, Manufacturing, and Applications IV, part of SPIE’s Symposium on Integrated Optoelectronics, 23-28 January 2000, San Jose, CA., U.S.A

224.        Y. K. Su and J. K. Hsu,"Fabrication of Gallium Nitride-Based Multiple Quantum Well Light Emitting Diodes", The Sixth IUMRS International Conference on Advanced Materials, Hong Kong, July 24-26 (2000)

225.        S. K. Saha, Y. K. Su and F. S. Juang, "Temperature and Field-dependent Quantum Efficiency in Tris-(8-hydroxy) Quinoline Aluminum Light Emitting Diode", International Optoelectronics Symposium, Taipei, Taiwan, July 26-28 (2000)

226.        Wen-Ray Chen, Y. K. Su and Shoou-Jinn Chang, "II Light Emitting Diode with Low Operation Voltage", International Optoelectronics Symposium, Taipei, Taiwan, July 26-28 (2000)

227.        S. J. Chang, F. S. Juang, Y. K. Su and Y. C. Chiou, “The Study o f Metal-GaN Interface of Schottky Contacts with Different Metals “, Solid State Devices and Materials, Sendai, Japan, August 29-30(2000). 

228.        Y. K. Su, F. S. Juang, S. J. Chang, Y. C. Chiou and J. K. Shiu, “The Study of GaN and InGaN Metal-Semiconductor-Metal Photodetectors with Different Schottky Contact Metals”, Solid State Devices and Materials, Sendai, Japan, August 29-30(2000).

229.        S. J. Chang, F. S. Juang, Y. K. Su and Y. C. Chiou, “The Study of Metal – Gan Interface of Schottky Contacts with Different Metals”, Extended Abstracts of 2000 International Conference on Solid State Devices and Materials.  Pp146-147, Sendai, Japan (2000). 

230.        Y. K. Su, F. S. Juang, Y. C. Chiou, J. K. Shiu, “The Study of Gan and InGan Metal – Semiconductor – Metal Photodetectors of 2000 International Conference on Solid State Devices and Materials.  Pp148-149, Sendai, Japan (2000). 

231.        C. H. Chen, Y. K. Su, S. J. Chang, J. K. Sheu, I. C. Lin, “Vertical High Quality Mirrorlike Facet of Gan – Based Device by Reactive Ion Etching, Extended Abstracts of the 2000 International Conference on Solid State Devices and Materials.  Pp502-503, Sendai, Japan (2000).

232.        K. S. Ramaiah, Y. K. Su, F. S. Juang, S. J. Chang, “Photoluminescence, Electrical and Structural Properties of Unintentionally Doped, Mg – and Si Doped Gan Thin Film Grown by MOCVD Technique”, 2000 International Electron Devices and Materials Symposia, pp23-26, Chung – Li, Taiwan (2000). 

233.        Y. K. Su, J. S. Wu, J. R. Cahng, K. M. Wu, “Well Width Dependence for Novel AlInAsSb/InGaAs Double – Barrier Resonant Tunneling Diodes”, 2000 International Electron Devices and Materials Symposia, pp149-151, Chung – Li, Taiwan (2000). 

234.        Y. K. Su, F. S. Juang, S. J. Chang, D. G. Chwu, “Effect of Diluted Ammonia on the Mobility and Photoluminescence of Undoped GaN Grown by MOCVD”, 2000 International Electron Devices and Materials Symposia, pp175-178, Chung – Li, Taiwan (2000).

235.        Y. K. Su, J. K. Sheu, C. C. Chen, M. J. Jou and F. S. Juang, (Invited Talk), “InGaN/GaN Blue LED with AlGaN/GaN Strain Layer Superlattice Top Layer”, International Conference on Fiber Optics and Photonics, pp 369-370, Calcutta, India (2000). 

236.        C. H. Chen, Y. K. Su, F. S. Juang, S. J. Chang, “Photoluminescence Studies on GaN Thin Films Grown by MOCVD”, International Conference on Fiber Optics and Photonics, pp83-85, Calcutta, India (2000). 

237.        J. S. Wu, Y. K. Su, J. R. Chang, C. L. Lin, H. C. Wang and D. H. Jaw, “MOVPE Growth and Characterization of AlInAsSb/GaInAsSb multiple-quantum-well structure”, Proc. 12th Int. Conf. Ternary and Multinary Compounds, Jpn. J. Appl. Phys. Vol. 39(2000) Suppl. 39-1, pp. 222-223 EI

238.        F. S. Juang, Y. K. Su, S. J. Chang and T. K. Chu, "Undoped GaN epitaxial films grown by MOCVD", Proc. 5th Chinese Optoelectronics Workshop (2001) p.14

239.        Y. K. Su, J. K. Sheu, C. C. Chen and F. S. Juang, “In GaN/GaN Blue LED with AlGaN/GaN Strain Layer Superlattice Top Layer”, International Conference on Fiber Optics and Photonics, Calcutta, India, Dec (2000) – Invited Talk. 

240.        C.H. Ko, Y. K. Su, S. J. Chang and C. I. Chang, “A p-Down InGaN/GaN MQW LED structure Grown by MOVPE, 2001 International Conference on Solid State Devices and Materials, Tokyo, Japan (2001). 

241.        C. H. Chen, Y. K. Su, S. J. Chang and J. C. Chi, “High Brightness Green Light Emitting Diode with Charge Asymmetric Resonance Tunneling Structure”, 2001 International Conference on Solid State Devices and Materials, Tokyo, Japan (2001). 

242.        L. W. Wu, S. J. Chang, Y. K. Su, C. H. Kou, W. C. Lai, C. H. Chen, J. K. Sheu and G. C. Chi, “White-light emission form InGaN/GaN multi-quantum well light-emitting diodes with Si and Zn co-doped active well layer”, Fourth International Symposium on Blue Laser and Light Emitting Diodes( ISBLLED), Cordoba, Spain, 11-15 March (2002)

243.        S. K. Saha and Y. K. Su, “Atomic Force Microscopy of Conducting Polypyrrole Nanotube”, The 2nd Cross-Strait Workshop on “Nano Science and Technology”, Hong Kong, 9-11 December 2002. 

244.        C. H. Chen, Y. K Su, S. J. Chang, J. F. Chen, P. C. Chen, Y. Z. Chiou, Y. D. Jhoou and B. R. Huang, “Nitride-based cascade dual-wavelength InGaN quantum well white light emitting diodes”, International Electron Devices and Materials Symposium (IEDMS), Taipei, Taiwan, December 20-21, 2002. 

245.        T. C. Wen, S. J. Chang, Y. K. Su, L.W. Wu, W. C. Lai, C. H. Kuo, J. K. Sheu and J. F. Chen, “InGaN/GaN tunnel injection blue light emitting diodes”, International Electron Devices and Materials Symposium (IEDMS), Taipei, Taiwan, December 20-21, 2002.

246.        T. C. Wen, S. J. Chang, Y. K. Su, L. W. Wu, W. C. Lai, C. H. Kuo, J. K. Sheu and J. F. Chen, “The growth of InGaN/GaN MQW green light emitting diodes in a multi-wafer high speed rotating disk reactor”, International Electron Devices and Materials Symposium (IEDMS), Taipei, Taiwan, December 20-21, 2002.

247.        H. C. Yu, S. J. Chang, Y. K. Su, J. S. Wang, A. R. Kovsh, Y. T. Wu, K. F. Lin, R. S. Hsiao, L. P. Chen, C. Y. Huang, W. J. Jiang, C. P. Sung and J. Y. Chi, “Investigation and fabrication of 1.3μm InAs quantum dot resonant-cavity light emitting diodes”, International Electron Devices and Materials Symposium (IEDMS), Taipei, Taiwan, December 20-21, 2002.

248.        C. H. Lin, Y. K.Su, Y. Z. Juang and L. P. Chen, “The effects of geometry and bias current on the noise performance of SiGe HBTs”, International Electron Devices and Materials Symposium (IEDMS), Taipei, Taiwan, December 20-21, 2002.

249.        C. T. Wu, Y. K. Su, F. Shiau, C. L. Lin and B. T. Wu, “Thickness effect of LiF layer in Alq3/NBP organic light emitting diode”, International Electron Devices and Materials Symposium (IEDMS), Taipei, Taiwan, December 20-21, 2002.

250.        B. T. Wu, Y. K. Su, H.Y. Haung, C. T. Wu and C. L. Lin, “Mobility modification of Pentacene-based organic thin-film transistors”, International Electron Devices and Materials Symposium (IEDMS), Taipei, Taiwan, December 20-21, 2002.

251.        L. W. Wu, S. J. Chang, Y. K. Su, T. C. Wen, C.H. Kuo, W. C. Lai, J. K. Sheu and J. M Tsai, “Nitride-based LEDs with Si-Doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer”, International Electron Devices and Materials Symposium (IEDMS), Taipei, Taiwan, December 20-21, 2002.

252.        C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. F. Chen and J. M. Tsai, “Luminescence of AlGaN/InGaN quantum wells ultraviolet light-emitting diode”, International Electron Devices and Materials Symposium (IEDMS), Taipei, Taiwan, December 20-21, 2002.

253.        S. C. Wei, Y. K. Su, S. J. Chang, R. L. Wang and T. H. Hsu, “Leakage current improvement of AlGaN/GaN HFETs by high resistive Mg-doped GaN layer”, International Electron Devices and Materials Symposium (IEDMS), Taipei, Taiwan, December 20-21, 2002.

254.        Y. K. Su, S. J. Chang, S. H. Liu, Y. Z. Chiou, J. Gong and C. S. Chang, “The Characteristics of Photo-CVD SiO2 and its application in GaN MIS Photodector”, International Electron Devices and Materials Symposium (IEDMS), Taipei, Taiwan, December 20-21, 2002.

255.        T. M. Kuan, S. J. Chang, Y. K. Su, C. H. Ko, J. B. Webb, J. A. Bardwell, Y. Liu, H. Tang, W. L. Lin, Y. T. Cherng and W. H. Lan, “High gain AlGaN/GaN 2DEG photodetectors with isolation layer grown by LP-MOVPE”, International Electron Devices and Materials Symposium (IEDMS), Taipei, Taiwan, December 20-21, 2002.

256.        L. W. Ji, Y. K. Su, L. W. Wu, S. J. Chang, T. H. Fang, W. C. Lai, Y. Z. Chiou and Q. K. Xue, “A novel method to realize InGaN quantum dots by metalorganic chemical vapor deposition”, International Electron Devices and Materials Symposium (IEDMS), Taipei, Taiwan, December 20-21, 2002.

257.        S. J. Chang, Y. K. Su, Y. C. Lin, C. S. Chang, C. H. Kio, L. W. Wu, J. K. Sheu, T. C. Wen, S. C. Shei and C. W. Kuo, “InGaN/GaN Blue LEDs fabricated on <11-20> patterened sapphire substrates”, International Conference on Nitride Semiconductors (ICNS), Nara, Japan, May 25-30, 2003.

258.        C. H. Chen, S. J. Chang and Y. K. Su, “Improved ESD protection by combining InGaN/Gan MQW LEDs with GaN Schottky diodes”, International Conference on Nitride Semiconductors (ICNS), Nara, Japan, May 25-30, 2003.

259.        C. K. Wang, S. J. Chang, Y. K. Su, Y. Z. Chiou, T. K. Lin and B. R. Huang, “Low Interface State Density AlGaN/GaN MOSHEET with Photochemical Vapor Deposition SiO2 Layers”, International Conference on Nitride Semiconductors (ICNS), Nara, Japan, May 25-30, 2003.

260.        C. H. Chen, S. J. Chang and Y. K. Su, “Nitride-based cascade dual-wavelength InGaN quanyum well near white light emitting diodes”, International Conference on Nitride Semiconductors (ICNS), Nara, Japan, May 25-30, 2003.

261.        C. S. Chang, S. J. Chang, Y. K. Su, J. K. Sheu, W. C. Lai, C. H. Kuo, L.W. Wu, Y. C. Lin and Y. P. Hsu, “Nitride based light emitting diodes with ITO as transparent contact layer”, International Conference on Nitride Semiconductors (ICNS), Nara, Japan, May 25-30, 2003.

262.        H. C. Wang, Y. K. Su, C. L. Lin, W. B. Chen, S. M. Chen, and W. L. Li, “Improvement of AlGaInP MQW Light Emitting Diodes by Modification of Ohmic Contact Layer,” 2003 International Conference on Solid State Devices and Materials, September 16-18, Toykyo, Japan, 2003

263.        W. B. Chen, Y. K. Su, C. L. Lin, H. C. Wang, S. M. Chen, “InGaN/GaN Light Emitting Diodes with a Lateral Current Blocking Structure,” 2003 International Conference on Solid State Devices and Materials, September 16-18, Toykyo, Japan, 2003

264.        K. T. Liu, Y. K. Su, S. J. Chang, K. Onomitsu and Y. Horikoshi, “Donor-Isoelectronic trap pair luminescence from Mg and P co-implanted GaN grown by MOCVD”, The 5th International Symposium on Blue Laser and Light Emitting Diodes, Gyeongju, Korea, 2004. 

265.        Y. K. Su, S. H. Hsu, S. J. Chang and P. H. Wu, “Study of the electron properties by persistent photoconductive measurement in GaxIn1-xNyAs1-y”, 2004 International Conference on Solid State Devices and Materials, September 15-17, Toykyo, Japan, 2004

266.        C. K. Wang, S. J. Chang, Y. K. Su, Y. Z. Chiou, C. H. Kuo, C. S. Chang, T. K. Lin, T. K. Ko and J. J. Tang, “High Temperature and Low Frequency Noise of AlGaN/GaN/AlGaN Double Heterostructure MOS-HFETs with Photo-Chemical Vapor Deposition SiO2 Layer”, 2004 International Conference on Solid State Devices and Materials, September 15-17, Toykyo, Japan, 2004

267.        Y. Z. Chiou, C. K. Wang, S. J. Chang, Y. K. Su, C. S. Chang, T. K. Lin, T. H. Fang and J. J. Tang, “Noise Analysis of AlGaN/GaN MOS-HFETs with Photochenical-Vapor Deposition SiO2 Layer”, 2004 International Conference on Solid State Devices and Materials, September 15-17, Toykyo, Japan, 2004

268.        Y. D. Jhou, C. H. Chen, S. J. Chang, Y. K. Su, P. C. Chang, P. C. Chen, H. Hung, S. M. Wang and C. L. Yu, “Nitride-based light emitting diode and photodetector dual function Devices with InGaN/GaN multiple quantum well structure”, 2004 International Conference on Solid State Devices and Materials, September 15-17, Toykyo, Japan, 2004

269.        S. C. Huang, L. W. Ji, Y. K. Su, S. J. Chang, C. H. Huang, S. J. Young, H. Y. Lee and C. C. Diao, “InGaN/GaN MQO P-N Junction Photodiodes”, 2004 International Conference on Solid State Devices and Materials, September 15-17, Toykyo, Japan, 2004

270.        M. L. Tu, Y. K. Su, T. H. Fang, W. H. Chen and H. Yang, “ Improved performance of DB-PPV based Polymer Light Emitting Diode by Thermal Annealing”, 2004 International Conference on Solid State Devices and Materials, September 15-17, Toykyo, Japan, 2004

271.        B. T. Wu, Y. K. Su, A. C. Wang, M. L. Tu and Y. S. Chen, “Interface Modification in Organic Thin Film Transistors”, 2004 International Conference on Solid State Devices and Materials, September 15-17, Toykyo, Japan, 2004

272.        C. S. Chang, S. J. Chang, Y. K. Su, W. S. Chen, C. F. Shen, S. C. Shei and H. M. Lo, “Nitride based Power Chip with ITO p-Contact and Al back-side Reflector”, 2004 International Conference on Solid State Devices and Materials, September 15-17, Toykyo, Japan, 2004

273.        B. R. Huang, S. M. Wang, C. H. Chen, S. J. Chang, Y. K. Su, H. Hung and Y. T. Chou, “The novel method to improve electrical characteristics of p-type GaN by using Ni catalysis”, 2004 International Conference on Solid State Devices and Materials, September 15-17, Toykyo, Japan, 2004

274.        H. C. Yu, S. J. Chang, Y. K. Su, I. L. Chen, T. D. Lee, C. M. Lu, C. H. Chiou, Z. H. Lee, J. M. Wang and C. P. Sung, “Highly strained oxide confined InGaAs VCSELs emitting in the 1.3im regions”, 2004 International Conference on Solid State Devices and Materials, September 15-17, Toykyo, Japan, 2004

275.        H.S. Hou, S.J. Chang, and Y.K. Su, “Economical passive filter synthesis using genetic programming based on tree representation”, accepted by 2005 IEEE International Symposium on Circuits and System (ISCAS 2005).

276.        Y. K. Su, “The Current and Future Prospects of Taiwan’s Optoelectronic Industry in the Twenieth-First Centry”, Second Asia-pacific Workshop on Widegap Semiconductors, March 7-9, Hsinchu, Taiwan, 2005.

277.        K. T. Liu, Y. K. Su and S. J. Chang, “Mg+N co-implantation into GaN for p-type doping”, Second Asia-pacific Workshop on Widegap Semiconductors, March 7-9, Hsinchu, Taiwan, 2005.

278.        T. K. Lin, S. J. Chang, Y. K. Su, Y. Z. Chiou, C. K. Wang, S. P. Chang, H. L. Liu and J. J Wong, “ZnSe homoepitaxial MSM photodetectors with transparent ITO contact electrodes”, Second Asia-pacific Workshop on Widegap Semiconductors, March 7-9, Hsinchu, Taiwan, 2005.

279.        W. S. Chen, Y. K. Su, S. J. Chang, R. L. Wang and S. C. Shei, “Effects of Al mole fraction on the AlxGa1-x/GaN HEMTs”, Second Asia-pacific Workshop on Widegap Semiconductors, March 7-9, Hsinchu, Taiwan, 2005.

280.        S. J. Chang, Y. K. Su, H. L. Liu, S. P. Chang, Y. Z. Chiou, C. S. Chang, C. K. Wang, T. K. Lin and J. J. Tang, “GaN MSM UV Photodetectors with Transparent Tungsten Electrodes”, Second Asia-pacific Workshop on Widegap Semiconductors, March 7-9, Hsinchu, Taiwan, 2005.

281.        Y. Z. Chiou, Y. K. Su, S. C. K. Wang, S. L. Liu, S. P. Chang, C. C. Wong and K. W. Lin, “GaAs MOS Capacitors with Photo-CVD SiO2 Insulator Layers”, Second Asia-pacific Workshop on Widegap Semiconductors, March 7-9, Hsinchu, Taiwan, 2005.

282.        M. L. Tu, Y. K. Su, S. j. Chang, W. H. Chen and W. C. Lu, “Enhanced Performance of polymer Light Emitting Diodes by thermal Effect of Light Emissive DB-PPV Films”, Second Asia-pacific Workshop on Widegap Semiconductors, March 7-9, Hsinchu, Taiwan, 2005.

283.        S. M Wang, C. H. Chen, S. J. Chang and Y. K. Su, “Study the influence of Ni on the surface of Mg-doped Gan”, Second Asia-pacific Workshop on Widegap Semiconductors, March 7-9, Hsinchu, Taiwan, 2005.

284.        L. W. Ji, C. C. Diao, Y. K. Su, R. W. Chuang, S. J. Chang and S. J. Young, “Optical properties of InGaN Quantum Dots”, Second Asia-pacific Workshop on Widegap Semiconductors, March 7-9, Hsinchu, Taiwan, 2005.

285.        Y. D. Jhou, C. H. Chen, S. J. Chang, Y. K. Su, and R. W. Chuang, “Dual function photodiodes with InGaN/GaN multiple quantum well structures”, Second Asia-pacific Workshop on Widegap Semiconductors, March 7-9, Hsinchu, Taiwan, 2005.

286.        M. L. Lee, J. K. Sheu, Y. K. Su, S. J. Chang, W. C. Lai, and G. C. Chi, “Characterizations of GaN Schottky barrier photodetectors with a highly-resistivity low-temperature GaN cap layer”, Second Asia-pacific Workshop on Widegap Semiconductors, March 7-9, Hsinchu, Taiwan, 2005.

287.        S. J. Chang, Y. K. Su, C. L. Yu, C. H. Chen, P. C. Chang and H. C. Chen,“Improved In0.37Ga0.63N MSM phototdetectors by using the recessed-electrode structure”, Second Asia-pacific Workshop on Widegap Semiconductors, March 7-9, Hsinchu, Taiwan, 2005.

288.        R. L. Wang, Y. K. Su, K. Y. Chen abd C. H Huang, “The Influence of InGaN Channel Thickness on the Electrical Characteristics of AlGaN/InGaN/GaN HEFTs”, Second Asia-pacific Workshop on Widegap Semiconductors, March 7-9, Hsinchu, Taiwan, 2005.

289.        Min-Hang Weng, Ru-Yuan Yang, Yu-Der Lin, Yan-Kuin Su, Ming-Chung Shih and Hung-Wei Wu, “Fabrication and characteristics of low K interconnection for RFICs”, 7th ICMI, USA, 2006.

290.        Ru-Yuan Yang, Yan-Kuin Su, Min-Hang Weng, Han-Ding Hsueh, Ming-Chang Shih, and Yu-Ming Yeh, “Structural and electrical properties of dc sputtering AlN/Si capacitors with different substrate temperatures”, 7th ICMI, USA, 2006.

291.        Y.K. Su, A.T. Cheng, MOVPE growth of InGaN/GaN multiple quantum wells for the blue laser diode applications, ICMOVPE XIII, May 22-26, Japan, 2006

292.        Y.K. Su, A.T. Cheng and C.H. Huang, DC characteristics improvement of recessed gate GaN-based HFETs grown by MOCVD, ICMOVPE XIII, May 22-26, Japan, 2006, (AOTC)

293.        Pei-Hsuan Wu, Yan-Kuin Su, "Surface morphology study of GaAs epilayer on Ge substrate grown by MOVPE", ICMOVPE-XIII, May 22-26, Miyazaki Japan, 2006, (AOTC)

294.        Cheng-Yuan Hung, Yan-Kuin Su, Yu-Der Lin and Hung-Wei Wu, Min-Hang Weng “On-Wafer Dielectric Measurement Technology for High Resistivity Silicon Transmission Line Interconnect Characterization,” Symposium on Nano Device Technology (SNDT), 2006, Hsinchu. (AOTC)

295.        Hung-Wei Wu, Yan-Kuin Su, Cheng-Yuan Hung, Min-Hang Weng and Ru-Yuan Yang, “Evaluation of Microwave Material of Low K Interconnection for RF Package,” Symposium on Nano Device Technology (SNDT), 2006, Hsinchu.

296.        Ru-Yuan Yang, Yan-Kuin Su , Yung-Shou Ho , Min-Hang Weng and Yu-Ming Yeh, “Evaluation of deposited Zr-Sn-Ti O Thin Film for interconnect layer”, SNDT, 2006.

297.        S. C. Hung, Y. K. Su, S. J. Chang, R.W. Chuang, "Controlled Self-formation of GaN Nanotubes by Inductively Coupled Plasmas Etching", IEEE International Conference of Nano/Micro Engineered and Molecular Systems(IEEE-NEMS 2006), 18-21 January, Zhuhai Guangdong China, 2006, (AOTC)

298.        S. C. Hung, Y. K. Su, T. H. Fang,"Elastic Modulus Investigation of Gallium Nitride Nanotubes", IEEE International Conference of Nano/Micro Engineered and Molecular Systems(IEEE-NEMS 2006), 18-21 January, Zhuhai Guangdong China, 2006, (AOTC)

299.        P. H. Wu, Y. K. Su, I. L. Chen, S. F. Chen, K. H. Su, S. H. Hsu, C. H. Chiou, S. H. Guo, J. T. Hsu and W. R. Chen, “Surface morphology study of GaAs epilayer on Ge substrate grown by MOVPE”, 13th International Conference on Metal Organic Vapor Phase Epitaxy, May 22-26, Miyazaki, Japan, 2006

300.        L. W. Ji, S. J. Young, Y. K. Su and S. J. Chang, “Optical Characterization of III-Nitride Phototdetectors with Self-Organized Quantum Dots”, 13th International Conference on Metal Organic Vapor Phase Epitaxy, May 22-26, Miyazaki, Japan, 2006

301.        M. L. Tu, Y. K. Su, S. J. Chang and R. W. Chuang, “GaN UV Photodetector by Using Transparency Antimony Doped Tix Oxide Electrode”, 13th International Conference on Metal Organic Vapor Phase Epitaxy, May 22-26, Miyazaki, Japan, 2006

302.        H.Hung, C. H. Chen, S. J. Chang, Y. K. Su, S. H. Hsu and H. Kuan, “Kinetics of Persistent Photoconductivity in InGaN Epitaxial Films Grown by MOVPE”, 13th International Conference on Metal Organic Vapor Phase Epitaxy, May 22-26, Miyazaki, Japan, 2006

303.        W. C. Chen, Y. K. Su, R. W. Chuang, S. H. Hsu, M. C. Tsai, K. Y. Cheng and Y. S. Wang, “Surfactant Effects of Sb on InGaAsN MQWs Grown by MOVPE”, 13th International Conference on Metal Organic Vapor Phase Epitaxy, May 22-26, Miyazaki, Japan, 2006

304.        C. B. Huang, Y. K. Su, C. L. Lin, H. C. Wang and S. M. Chen, “Wafer Level Probing Technique for InGaN/GaN Light Emitting Diode Grown by MOCVD”, 13th International Conference on Metal Organic Vapor Phase Epitaxy, May 22-26, Miyazaki, Japan, 2006

305.        Y. K. Su, S. H. Hsu, W. C. Chen, S. J. Chang, H. L. Tsai and P. H. Wu, “Effect of nitrogen incorporation on dislocation in GaInNAs-based MQW p-i-n structures”, 13th International Conference on Metal Organic Vapor Phase Epitaxy, May 22-26, Miyazaki, Japan, 2006

306.        Y. K. Su and A. T. Cheng, “MOVPE growth of InGaN/GaN multiple quantum wells for the blue laser diode applications”, 13th International Conference on Metal Organic Vapor Phase Epitaxy, May 22-26, Miyazaki, Japan, 2006

307.        A. T. Cheng, Y. K. Su and C. H. Huang, “DC characteristics improvement of recessed gate GaN-based HEFTs grown by MOCVD”, 13th International Conference on Metal Organic Vapor Phase Epitaxy, May 22-26, Miyazaki, Japan, 2006

308.        C. L. Lin, Z.Y. Wang, and Y. K. Su, “Performance Improvement of White Light Emitting Diode by Package” The Eight of Chinese Optoelectronics Symposium, June 25-30, Shanxi University, Tainyuan, China, 2006

309.        C. R. Tsai, F. S. Juang, L. W. Ji, Y. S. Tsai and Y. K. Su, “Top Emission Organic Light Emitting Diodes with Double Metal Layer Anode”, The Eight of Chinese Optoelectronics Symposium, June 25-30, Shanxi University, Tainyuan, China, 2006

310.        Y. K. Su, S. C. Wei and S. J. Chang, “Nitride-based LEDs with Improved ESD Reliability“, The Eight of Chinese Optoelectronics Symposium, June 25-30, Shanxi University, Tainyuan, China, 2006

311.        W. C. Chen and Y. K. Su, “Optoelectronic Applications of InGaAs(N) Alloys”, The Eight of Chinese Optoelectronics Symposium, June 25-30, Shanxi University, Tainyuan, China, 2006

312.        P. H. Wu, Y. K. Su, I. L. Chen, C. H. Chiou, J. T. Hsu, W. R. Chen, “1.2-Ev Gaasn/Ingaas Strain-Compensated Superlattic Structure for High Efficiency Solar Cells,“International Workshop on Nitride Semiconductors 2006, October, 22-27, Kyoto, Japan, 2006

313.        Y. L. Wu, Y. C. Lin, F. S. Juang and Y. K. Su, “Black film for improving the contrast ratio of organic light emitting diodes”, 2006 International Conference on Solid State Devices and Materials, September 12-15, 2006, PACIFICO YOKOHAMA, Japan, 2006

314.        S. Y. Su, Y. S. Tsai, F. S. Juang, L. W. Ji, S. H. Wang and Y. K. Su, “Efficiency improvement in flexible phosphorescent organic light-emitting diode”, 2006 International Conference on Solid State Devices and Materials, September 12-15, 2006, PACIFICO YOKOHAMA, Japan, 2006

315.        Y. P. Hsu, S. J. Chang, Y. K. Su, W. S. Chen, J. K. Sheu, J. Y. Chu and C. T. Kuo, “High Brightness and Crack-free InGaN/GaN Light Emitting Diode With AlGaN Buffer Layer On Si (III)”, 2006 International Conference on Solid State Devices and Materials, September 12-15, 2006, PACIFICO YOKOHAMA, Japan, 2006

316.        Jone F. Chen, J. R. Lee, K. M. Wu, Y. K. Su, H. C. Wang, Y. C. Lin and S. L. Hsu, “Hot-Carrier Reliability Improvement in Submicron High-Voltage DMOS Transistors”, 2006 International Conference on Solid State Devices and Materials, September 12-15, 2006, PACIFICO YOKOHAMA, Japan, 2006

317.        Y. K. Su, W. C. Chen, R. W. Chuang, S. H. Hsu and B. Y. Chen, “Improved Device Characteristics of InGaAsN Photodetectors Using MIMS Structure”, 2006 International Conference on Solid State Devices and Materials, September 12-15, 2006, PACIFICO YOKOHAMA, Japan, 2006

318.        S. J. Young, L. W. Ji, S. J. Chang, Y. K. Su and X. L. Du, “Characterization of the ZnO metal-semiconductor-metal ultraviolet photodetectors with Au contact electrodes”, 2006 International Conference on Solid State Devices and Materials, September 12-15, 2006, PACIFICO YOKOHAMA, Japan, 2006

319.        C. S. Huang, Y. K. Su and B. T. Wu, “Fabrication of color-stable organic light-emitting devices by utilizing incomplete energy transform”, 2006 International Conference on Solid State Devices and Materials, September 12-15, 2006, PACIFICO YOKOHAMA, Japan, 2006

320.        K. T. Liu, Y. K. Su, S. J. Chang and Y. Horikoshi, “Phosphorus Implantation Effects in Mg Doped GaN Epilayers”, 2006 International Conference on Solid State Devices and Materials, September 12-15, 2006, PACIFICO YOKOHAMA, Japan, 2006

321.        Hung-Wei Wu, Min-Hang Weng, Yan-Kuin Su, and Ru-Yuan Yang, “Evaluation of loss and APHC of dc-biased low k transmission line based on polyimide/Si substrate,” 2006 IEEE Asia-Pacific Microwave Conference (APMC), vol. 2, pp. 1288-1291, Yokohama, Japan.

322.        Hung-Wei Wu, Yan-Kuin Su, Ru-Yuan Yang, and Min-Hang Weng, “Model of dc-biased thin film microstrip line based on low k Si substrate,” 2006 International Electron Devices and Materials Symposium (IEDMS), session D, pp. 447-449, NCKU, Tainan, Taiwan.

323.        H. Yu, J. Wang, Y.K. Su, H. Kuo, H. D. Yang, “Low threshold current, low resistance 1.3µm InAs/InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE”, Spie Potonics west 2007 , January 20-25, San Jose, California USA, 2007

324.        W. Chen, Y. K. Su, W. Chuang, M. Tsai, “Highly strained InGaAs lasers grown by MOVPE with low threshold current density”, Spie Potonics west 2007, January 20-25 San Jose, California USA, 2007

325.        K. Chen, Y. K. Su, C. L. Lin, J. Q. Huang, “Fabrication of high power AllnGaP-based red light emitting diodes with novel package by electroplating”, Spie Potonics west 2007, January 20-25, San Jose, California USA, 2007

326.        Y. K. Su, S. C. Wei, Y. F. Chen and S. J. Chang, “Electrostatic discharge engineering of nitride-based LEDs“, APWS 2007, March 11-14, Jeonju, Korea, 2007

327.        Y. K. Su, A. T. Cheng, W. C. Lai, Y. Z. Chen, S. Y. Kuo, Y. X. Chen, “Improvement of Crystal and Surface Properties of AllnN Grown by Metalorganic Chemical Vapor Deposition”, APWS 2007, March 11-14, Jeonju, Korea, 2007

328.        K. C. Chen, Ricky W. Chuang, J. Q. Huang, C. L. Lin, Y. K. Su, “Ultra High Thermal Dissipation of High Power Light-emitting Diodes by Copper Electroplating”, IMAPS 2007, March 19-22, Scottsdale, Arizona USA, 2007   

329.        W. C. Chen, Y. K. Su, R. W. Chuang, H. Yu, “National Cheng InGaAsN MSM photodetectors using RF-Sputtered ITO layer as transparency Schottky contacts”, SPIE 2007, April 16-19, Prague, Czech Republic, 2007 

330.        Y. K. Su, A. T. Cheng, W. C. Lai, “Opticql characterization of InGaN/GaN multiple quantum well structures grown by metalorgainic chemical vapor deposition”, SPIE 2007, April 16-19, Prague, Czech Republic, 2007

331.        K. C. Chen, R. W. Chuang, Y. K. Su, C. L. Lin, H. C. Hsu, J. Q. Huang, K. F. Yang,“High Thermal Dissipation of Ultra High Power Light-Emitting Diodes by Copper Electroplating”, ECTC 2007, May 29- June 1, Reno, Nevada, USA, 2007 

332.        C. Y. Hung, C. S. Ye, R. Y. Yang, M. H. Weng, C. Y. Huang, Y. K. Su, “A Compact-Size and High Isolation Dual-Band Coplanar-Waveguide Bandpass Filter”, IMS 2007(IEEE MTT-S Internation Microwave), June 3-8, Honolulu, Hawaii, 2007 

333.        H. C. Hsu, R. W. Chuang, Y. K. Su, K. C. Chen, C. L. Lin, J. Q. Huang, “Fabrication and Package of Ultra High Power Light-Emitting Diodes by Copper Electroplating”, EOS 2007, June 17-19, Germany, 2007

334.        Cheng-Yuan Hung, Yan-Kuin Su, Ru-Yuan Yang, Hung-Wei Wu, and Min-Hang Weng, “A Compact Semi-Lumped Coplanar Waveguide Low-Pass Filter Fabricated on High Resistivity Silicon Substrate,” 2007 Symposium on Nano Device Technology (SNDT), April, Hsinchu, Taiwan.

335.        Cheng-Yuan Hung, Yan-Kuin Su, Ru-Yuan Yang, Hung-Wei Wu, and Min-Hang Weng, “A Millimeter-wave on Chip Semi-lumped Ultra-Wideband Bandpass Filter,” 2007 Symposium on Nano Device Technology (SNDT), April, Hsinchu, Taiwan.

336.        Hung-Wei Wu, Kevin Shu, Ru-Yuan Yang, Min-Hang Weng, Jau-Rung Chen and Yan-Kuin Su, “Design of a compact microstrip triplexer for multiband applications”, IEEE European Microwave Conference(EuMC), Munich, Germany 2007

337.        Min-Hang Weng, Hung-Wei Wu, Kevin Shu, Jau-Rung Chen, Ru-Yuan Yang and Yan-Kuin Su, “A novel triple-band bandpass filter using multilayer-based substrates for WiMAX”, IEEE European Microwave Conference(EuMC), Munich, Germany 2007

338.        Hung-Wei Wu, Yan-Kuin Su, Ru-Yuan Yang, Cheng-Yuan Hung and Min-Hang Weng, “Characteristics of average power handling capability of dc-biased thin film microstrip line on polyimide for MMICs,” Symposium on Nano Device Technology (SNDT), April, Hsinchu, Taiwan 2007

339.        Hung-Wei Wu, Yan-Kuin Su, Ru-Yuan Yang, Cheng-Yuan Hung and Min-Hang Weng, “Negative effective permittivity behavior of complementary split ring resonator-based microstrip line and its application for microwave filtering device,” Symposium on Nano Device Technology (SNDT), April, Hsinchu, Taiwan 2007

340.        YD Jhou, YK Su, SJ Chang, CH Liu, HC Lee and YY Lee, “AlInGaN-based photodetectors with novel MOCVD system,” 12th Europenan Workshop on Metalorganic Vapour Phase Epitaxy (EW-MOVPE XII), June 3-6, Bratislava, Slovakia 2007

341.        JC Lin, YK Su, SJ Chang, CC Huang, CH Lan, WH Lan, KC Huang, WR Chen, YC Cheng and WJ Lin, “High responsivity of GaN p-i-n photodetector grown by MOCVD,” 12th Europenan Workshop on Metalorganic Vapour Phase Epitaxy (EW-MOVPE XII), June 3-6, Bratislava, Slovakia 2007

342.        Chien-Hsuan Liu, Ruey-Lue Wang, Yan-Kuin Su, Chih-Ho Tu, and Ying-Zong Juang, “Performance Degeneration of CMOS RF Power Cells after Hot-Carrier and Load Mismatch Stresses,” IEEE-MWSCAS 2007, August 5-8, Montreal, Quebec, Canada 2007

343.        J. J. Chen, Y. K. Su, R. W. Chuang, H. C. Yu, W. C. Chen, K. Y. Cheng, and T. H. Shen, “Improvement in Characteristics of InGaAs/GaAs Quantum-Dot PIN Photodetectors with Antireflection Photonic Crystals,” 2007 International Conference on Solid State Devices and Materials(SSDM), September 18-21, Tsukuba, Ibaraki, Japan 2007

344.        Tsung-Syun Huang, Yan-Kuin Su, Bo-Chang Wang, “Study of Pentacene-Based Organic Thin Film Transistor with PMMA as Insulator,” 2007 International Conference on Solid State Devices and Materials(SSDM), September 18-21, Tsukuba, Ibaraki, Japan 2007

345.        Y. F. Chen, W. C. Chen, R. W. Chuang, Y. K. Su, and H. L. Tsai, Effect of AlGaAs cladding layer on GaInNAs/GaAs MQW p-i-n photodetector, 7th International Conference on Nitride Semiconductors, Las Vegas, USA, 2007.

346.        Y. F. Chen, W. C. Chen, R. W. Chuang, Y. K. Su, and H. L. Tsai, GaInNAs/GaAs p-i-n Photodetector with Multiquantum Well Structure, 2007 International Conference on Solid State Devices and Materials, Tsukuba, Japan, 2007.

347.        Saha, S. K., Su, Y. K., Lin, C. L., and Jaw, D. W., "Current-voltage characteristics of conducting polypyrrole nanotubes using atomic force microscopy," Nanotechnology, vol. 15, no. 1, pp. 66-69, 2004.

348.        Y. K. Su, J. J. Chen, R. W. Chuang, C. L. Lin, and C. C. Kao, “Photonic crystals on patterned sapphire substrates fabricated using nanosphere lithography,” 13th Microoptics Conference (MOC’07), Kagawa, Japan, October 28-31, 2007

349.        C. T. Wan, Y. K. Su, W. C. Chen, Y. S. Wang, K. Y. Cheng, “Growth of 1.3um highly strained GaAsSb/GaAs multiple quantum wells by MOVPE”, ICONN2008, February 25-29, 2008, Melbourne, Victoria, Australia

350.        Y. C. Chen, A. T. Cheng, H. C. Tsai, Y. K. Su, “The Characterization of Surface morphology of N-Type GaN after Photoelectrochemical Wet etching”, ICONN2008, February 25-29, 2008, Melbourne, Victoria, Australia

351.        C. Y. Huang, Y. C. Chen, H. C. Yu, Y. K. Su, T. C. Wen, T. F. Guo, “Fabrication and Characterization of Hybrid DBPPV-CdSe/ZnS Quantum Dot Light-Emitting Diodes”, ICONN2008, February 25-29, 2008, Melbourne, Victoria, Australia

352.        P. H. Wu, Y. K. Su, Surface exturing by Nano-sphere Deep-coating for Solar Cell Application”, ICONN2008, February 25-29, 2008, Melbourne, Victoria, Australia

353.        Y. K. Su, C. C. Kao, J. J. Chen, R. W. Chuang, C. L. Lin, “Improvement of Blue GaN-Based Light-Emitting Diodes with Nanosphere Layers”, INEC 2008, March 24-27, 2008, Shanghai, China

354.        C. H. Liu, R. L. Wang, C. Y. Chen, Y. K. Su, “A Multi-band Current-reused VCO for 2.5 GHz and 3.4 GHz WiMAX Applications”, ICICIC2008, June 18-20, 2008, Dalian, China

355.        Y. K. Su, C. T. Wan, R. W. Chuang, C. Y. Huang, W. C. Chen, Y. S. Wang and H. C. Yu“Temperature effect on the growth of strained GaAs1-ySby/GaAs(y>0.4) quantum wells by MOVPE”, 14th-ICMOVPE, June 1-6, 2008, Metz, France

356.        C. T. Wan, Y. K. Su, R. W. Chuang, C. Y. Huang, Y. S. Wang, W. C. Chen and H. C. Yu, “Improving photoluminescence of highly strained 1.32mm GaAsSb/GaAs multiple quantum wells grown on misorientation substrate”, 14th-ICMOVPE, June 1-6, 2008, Metz, France

357.        Y. K. Su, J. J. Chen, H. C. Wang, C. L. Lin, S. M. Chen, and W. L. Li, “Improvement of InGaN/GaN MQW light-emitting diodes with hemispherical SiO2 patterned layers,” 14th-ICMOVPE, June 1-6, 2008, Metz, France

358.        Y. K. Su, M. V. Madhava Rao, T. S. Huang, “CS2CO3/CA/AL Multilayer cathode for enhancing the green Polymer Light-Emitting Diodes”, ICPS2008, July 27-August 1, 2008, Rio de Janeiro, Brazil

359.        Y. K. Su, J. J. Chen, C. L. Lin, S. M. Chen, W. L. Li, C. C. Kao, “Pattern-Size Dependence of Characteristics of Nitride-Based LEDs Grown on Patterned Sapphire Substrates”, 2nd International Symposium on Growth of III-Nitrides (ISGN-2)July 6-9, 2008, Laforet Shuzenji, Izu, Japan

360.        Y.C. Chen, C.Y. Huang, Y.K. Su, W.L Li, “White Light Generation from DBPPV Polymer-CdSe/ZnS Quantum Dot-InGaN/GaN Quantum Well Dual hybrid Light-Emitting Diodes”, SSDM2008, September 23-26, 2008, Ibaraki, Japan

361.        T. S. Huang, Y. K. Su, J. S. Fang, “Investigation of buffer layer modified by doping glycerol for polymer photovoltaic devices”, SSDM2008, September 23-26, 2008, Ibaraki, Japan

362.        Y. K. Su, C. C. Kao, J. J. Chen, R. W. Chuang, C. L. Lin, “Improvement of Blue GaN-Based Light-Emitting Diodes with Nanosphere Layers”, 2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1-3, 214-216, 2008

363.        李品勳, 林俊良, 黃金泉, 蘇炎坤, 石志祥, 林明宏 “螢光粉用於固晶對高效率白光發光二極體之研究”  2008中國材料年會  2008/11/21-22

364.        李品勳, 林俊良, 黃金泉, 蘇炎坤 “固晶膠摻雜螢光粉對白光發光二極體光取出之研究” 2008 先進奈米材料應用研討會 2008/10/29

365.        劉育昇, 林俊良, 黃金泉, 蘇炎坤, 林明宏,  石祥志 “透過嵌入銅塊技術改善傳統藍色發光二極體之散熱特性” 2008中國材料年會 2008/11/21-22

366.        劉育昇, 林俊良, 黃金泉, 蘇炎坤, 林明宏,  石祥志 “不同發光二極體固晶材料的接面溫度分析” 2008 先進奈米材料應用研討會 2008/10/29

367.        吳嘉慶, 林俊良,  黃金泉, 蘇炎坤, 石祥志, 林明宏 “以二氧化鈦奈米粉末提升藍色發光二極體之光取出效率” 2008中國材料年會 2008/11/21-22

368.        吳嘉慶, 林俊良,  黃金泉, 蘇炎坤, 石祥志, 林明宏 “藍色發光二極體以二氧化鈦 奈米粉末提升之光取出效率” 2008 先進奈米材料應用研討會 2008/10/29

369.        P. S. Li , C. L. Lin , J. Q. Huang , Y. K. Su ,“Nano-particle powder used encapsulation for high efficiency WLED”, 2008 IWNE, IEEE , November 20-21, 2008, Tainan, Taiwan

370.        Y. S. Liu, C. L. Lin, J. Q. Huang and Y. K. Su ,“Junction temperature measurement and life time analysis of light-emitting diodes” ,2008  IWNE, IEEE, IEEE, November 20-21, 2008, Tainan, Taiwan

371.        Y.K. Su, C. C. Kao, C. L. Lin, J. J. Chen, and A.F Lee ,“Transfer bonding GaN LED on Mo substrates by Au-Ag metal layers” ,2008 IWNE, IEEE, November 20-21, 2008, Tainan, Taiwan

372.        C. F. Tsai, Y. K. Su, C. L. Lin, “Improvement in GaN-based light emitting diodes by silicon dioxide nanoparticles as the current blocking layer”, 2008 IWNE, IEEE, November 20-21, 2008, Tainan, Taiwan

373.        C. Y. Huang, T. S. Huang, Y. K. Su*, Y. C. Chen, J. L. Hou, “Hybrid Quantum Dot Light-Emitting Diodes: Design, Fabrication, and Characterization”, 2008 IWNE, IEEE, November 20-21, 2008, Tainan, Taiwan

374.        C. Y. Huang, Y. K. Su*, S. N. Huang, Y. C. Chen, C. T. Wan, M. V. Madhava Rao, T. F. Guo, and T. C. Wen , “Improvement of electron mobility of GaN films by Si/P co-implantation”, International Electron Devices and Materials Symposia (IEDMS) 2008, November 28-29. 2008, Taichung, Taiwan

375.        C. Y. Huang, Y. C. Chen, C. T. Wan, and Y. K. Su*, “White light-emitting diodes based on hybridization of Polyfluorene and CdSe/ZnS quantum dots”, International Electron Devices and Materials Symposia (IEDMS) 2008, November 28-29. 2008, Taichung, Taiwan

376.        C. Y. Huang, Y. K. Su*, T. S. Huang, Y. C. Chen, C. T. Wan, M. V. Madhava Rao, T. F. Guo, and T. C. Wen, “Hybridization of CdSe/ZnS Quantum Dots on InGaN/GaN Quantum Well Light-Emitting Diodes for Pink Light Emission”, IEEE PhotonicsGlobal@Singapore 2008 , December 8-11, 2008, Singapore

377.        C. Y. Huang, Y. K. Su*, Y. C. Chen, and C. T. Wan, “Degradation of Green Polyfluorene-Based Polymer Light-Emitting Diodes on Flexible PET Substrates”, IEEE PhotonicsGlobal@Singapore 2008, December 8-11, 2008, Singapore

378.        M. V. Madhava Rao, Y. K. Su, T. S. Huang, C. H. Yeh and M. L. Tu, “Polymer Light Emitting Diodes Based on DB-PPV/ZnO Nanocomposite Emissive Layer”, Cochin Nano 2009, January 3-6, 2009, Cochin, India

379.        Y. K. Su, M. V. Madhava Rao, T. S. Huang and C. Y. Huang, “Cs2CO3/Ca/Al multilayer cathode for enhancing the green Polymer Light-Emitting Diodes, Cochin Nano 2009, January 3-6, 2009, Cochin, India

380.        M. V. Madhava Rao, T. S. Huang, Y. K. Su, and C.Y. Huang, “Fabrication of bright white organic light-emitting devices with multilayer structure”, 16th Symposium on Nano Device Technology(SNDT 2009), April 29-30, 2009, Taiwan

381.        M. V. Madhava Rao, T. S. Huang, Y. K. Su, C. Y. Huang and S. C. Hsu, “Stable and Bright Single Active Layer Electrophosphorescent White Polymer Light-Emitting Devices”, 16th Symposium on Nano Device Technology(SNDT 2009), April 29-30, 2009, Taiwan

382.        Y. K. Su*, C. Y. Huang, J. J. Chen, C. F. Tsai, and C. C. Kao,“Hybrid Quantum Dot Light-Emitting Diodes: Design, Fabrication, and Characterization”, Asia-Pacific Workshop on widegap Semiconductors(APWS), May 24-28, 2009, Zhang Jia Jie, Hunan, China

383.        Y. K. Su, C. Y. Huang, J. J. Chen, C. C. Kao, C. F. Tsai, “The improvement of extraction efficiency for GaN-based light emitting diodes”, Asia-Pacific Workshop on widegap Semiconductors(APWS), May 24-28, 2009, Zhang Jia Jie, Hunan, China

384.        Y. K. Su, H. C. Hsu, S. J. Huang and S. C. Hung, “The study of V/III ratio effects on direct growth of a-plane GaN over r-plane sapphire substrate”, Asia-Pacific Workshop on widegap Semiconductors(APWS), May 24-28, 2009, Zhang Jia Jie, Hunan, China

385.        C. F. Tasi, Y. K. Su, C. L. Lin, “Improvement in the Light Extraction of In GaN-based Light Emitting Diodes by Micro-Textured ITO Surface with Different Geometric Patterns”, Asia-Pacific Workshop on widegap Semiconductors(APWS), May 24-28, 2009, Zhang Jia Jie, Hunan, China

386.        Y. F. Chen, C. W. Hsu, T. H. Wu, Y. K. Su, “In0.37Ga0.63N MSM Photodetectors with Recessed Electrodes fabricated by the Photoenhanced Chemical Etching Technique”, Asia-Pacific Workshop on widegap Semiconductors(APWS), May 24-28, 2009, Zhang Jia Jie, Hunan, China

387.        C. Y. Cheng, C. Y. Huang, Y. K. Su, T. S. Huang, Y, C. Chen, “Three-Band White Light-Emitting Diodes Based on Hybridization of Polyfluorene and CdSe/ZnS Quanturn Dots”, Internationl Conference on Materials for Advanced Technologies(ICMAT), June 28-July 3, 2009, Singapore

388.        H. C. Lee, Y. K. Su, “Enhancing InGaP/GaAs/Ge Multi-junction Solar Cell Efficiency by using Quantum Dots Excitation”, Internationl Conference on Materials for Advanced Technologies(ICMAT), June 28-July 3, 2009, Singapore

389.        Y. C. Chen, C. Y. Huang, T. S. Huang and Y. K. Su, “Fabrication and Characterization of Novel Organic Thin Film Transistors with CdSe/ZnS Quantum Dots Embedded in Bilayered Gate Dielectric”, Internationl Conference on Materials for Advanced Technologies(ICMAT), June 28-July 3, 2009, Singapore

390.        C. M. Wu, S. H. Su, S. Y. Kung, M. Yokoyama, T. S. Huang, Y. K. Su, “Enhancing the Performance of Organic Thin-Film Transistor using a Buffer Layer”,

391.        C. H. Hsu, Y. K. Su, S. J. Huang, “Investigation on direct-growth of a-Gan on r-sapphire by MOCVD”, International conference on Solid State Devices and Materials(SSDM2009), October 7-9, 2009, Japan.

392.        C. H. Hsu, Y. K. Su, S. J. Huang, “Investigation on direct-growth of a-Gan on r-sapphire by MOCVD”, International conference on Solid State Devices and Materials(SSDM2009), October 7-9, 2009, Japan.

393.        Y. K. Su, C. C. Kao, C. L. Lin, J. J. Chen, “Stress analysis in GaN epilayer after chemical mechanical polishing (CMP) from sapphire substrates”, International conference on Solid State Devices and Materials(SSDM2009), October 7-9, 2009, Japan

394.        P. C. Tsai, Y. K. Su, C. Y. Huang, “Enhanced Luminescence Efficiency of InGaN/GaN Multiple Quantum Wells by A Strain Relief Layer and Proper Si Doping”, International conference on Solid State Devices and Materials(SSDM2009), October 7-9, 2009, Japan

395.        C. H. Liu, Y. K. Su, R. L. Wang, C. H. Tu, Y. Z. Juang, “The Structure and Power-level Dependences of CMOS RF Power Cell Degradation by Hot-carrier Stress with Load Pull System”, International conference on Solid State Devices and Materials(SSDM2009), October 7-9, 2009, Japan

396.        C. Y. Cheng, Y. K. Su, C. F. Tsai, C. Y. Zeng, “Fabrication of Nano-pillar Array of Surface Texture on GaN-based Light-Emitting Diode by Nanoimprinting Lithography”, International conference on Solid State Devices and Materials(SSDM2009), October 7-9, 2009, Japan

397.        Y. K. Su, J. J. Chen, C. L. Lin, C. C. Kao, “Structural Analysis of Nitride-Based LEDS Grown on Micro-and Nano-Scale of Patterned Sapphire Substrates”, ICNS-8, October 18-23, 2009, Jeju, Korea

398.        Y. K. Su, C. C. Kao, C. L. Lin, and J. J. Chen, “Stress Analysis in GaN Epilayer after Chemical Mechanical Polishing (CMP) from Sapphire Substrates,” The 2009 International Conference on Solid Sate Devices and Materials (SSDM2009), October 6-9, Sendai Kokusai Hotel, Sendai(仙台), Japan, 2009

399.        Y. K. Su, J. J. Chen, C. L. Lin, C. C. Kao, and C. T. Lin, “Effect of Period of the Electron Emitter MQW Structure on the Improvement of Characteristics in Nitride-Based LEDs,” 8th International Conference on Nitride Semiconductor (ICNS-8), October 18-23, ICC Jeju, Jeju(濟州), Korea, 2009

400.        Chun-Fu Tsai, Yan-Kuin Su, and Chun-Liang Lin, “Improving Current Spreading of GaN-Based LEDs by N-Pad Current-Spreading Design,” 8th International Conference on Nitride Semiconductor (ICNS-8), October 18-23, ICC Jeju, Jeju(濟州), Korea, 2009

401.        Y. K. Su, J. J. Chen, C. L. Lin, and C. C. Kao, “Structural Analysis of Nitride-Based LEDs Grown on Micro- and Nano-Scale of Patterned Sapphire Substrates,” 8th International Conference on Nitride Semiconductor (ICNS-8), October 18-23, ICC Jeju, Jeju(濟州), Korea, 2009

402.        H. N. Chen, W. T. Liu, W. Y. Huang, Y. K. Su, C. L. Lin, and J. Q. Huang, “Organic Phosphor Concentration Effect on Green-Light LEDs,” International Thin Films Conference (TACT 2009), December 14 - 16, NTUT , Taipei, Taiwan, 2009

403.        M. V. Madhava Rao, T. S. Huang, Y. K. Su, Y. T. Huang C. Y. Huang, “Tandem Organic Light-Emitting Devices using C60 and Pentacene as a pure Organic Connecting Layer”, International Conference on Optics & Photonics, October 30-November 1, Chandigarh, India, 2009

404.        C. J. Chen, Ruey-Lue Wang, Y. K. Su, C. Y. Huang, Y. F. Chen, C. Y. Hung, “Influence of polysilicon thickness on the microwave attenuation losses of the CPWs fabricated on polysilicon-passivated high-resistivity silicon substrates”, International Semiconductor Device Research Symposium 2009, December 9-11, College Park, Maryland, USA, 2009

405.        H. C. Yu, C. T. Wan, Y. K. Su, Ricky W. Chuang, W. C. Chen, C. Y. Huang, W. H. Lin, Manfred H. Pilkuhn, “High-temperature stability of lasing wavelength in GaAsSb/GaAs double quantum wells lasers”, Photonics West 2010, January 23-28, San Francisco, California, USA, 2010

406.        M.V.Madhava Rao, Y. K. Su, T. S. Huang, C. Y. Huang, M. L. Tu, “Electroluminescent characteristics of Polymer and Quantum Dots nanocomposite Light Emitting Deviees”, ICN-2010, April 27-29, Kerala, India, 2010

407.        H. C. Lee, Y. K. Su, J. C. Lin, W. J. Lin, Y. C. Cheng, C. T. Yu, “Electron transport and carrier scattering mechanisms in InGaN/GaN heterojunction with graded InGaN buffer layer”, Takamatsu Symbol Tower, Kagawa, Japan, May 31-June 4, 2010

408.        H. C. Lee, Y. K. Su, J. C. Lin, W. J. Lin, Y. C. Cheng, “The composition calculating for AlxGayIn1-x-yN nitride-based material by using interpolation formula”, Takamatsu Symbol Tower, Kagawa, Japan, May 31-June 4, 2010

409.        S. C. Peng, Y. K. Su, L. W. Ji, C. Z. Wu, W. C. Chao, C. N. Tsai, “Persistent Photoconductivity of ZnO nanorod Arrays”, The 6th International Workshop on Zinc Oxide and Related Materials, Changchun, China, August 5-7, 2010

410.        H. C. Hsu, Y. K. Su, S. J. Huang, C. Y. Tseng, “ Improved Performance of High Power GaN-Based Blue LEDs with Gradient-stage MQW structure”, ICCG-16/ICVGE-14, Beijing, China, August 8-13, 2010

411.        H. C. Hsu, Y. K. Su, S. J. Huang, C. Y. Cheng, H. C. Chen, J. H. Hong, K. C. Chen, Y. J. Wang, C. Y. Wu, M. C. Chou, “Improved optical properties of a-plane InGaN/GaN multiple quantum wells with gradient-stages MQW structure”, Solid State Devices and Materials(2010SSDM), Tokyo, Japan, September 21-25, 2010

412.        Y. C. Chen, C. Y .Huang, H. C. Yu, C. Y. Cheng,Y. K. Su, T. H. Chang, “Organic nonvolatile memories Based on PMMA and PHEMA Dielectric Layers”, Solid State Devices and Materials(2011SSDM), Tokyo, Japan, September 21-25, 2010

413.        Y. K. Su, C. Y. Cheng, J. Y. Huang, Y. W. Lee, “Enhancement of the efficiency of GaAs-based solar cells by sol-gel-synthesized ZnO nanowire arrays as the antireflection layer”, Solid State Devices and Materials(2012SSDM), Tokyo, Japan, September 21-25, 2010

414.        Y. C. Chen, C. Y. Huang, C.Y. Cheng, H. C. Yu, Y. K. Su, T. H. Chang, “Nonvolatile memory thin film transistors using triple polymeric dielectric layers”, Solid State Devices and Materials(2013SSDM), Tokyo, Japan, September 21-25, 2010

415.        S.J.Huang, Y.K.Su, C.Y.Tseng, S.C.Lin, H.C.Hsu, “The Improvement of Light Intensity for Nitride-Based MQW LEDs by Gradient-Stage Emitter Layer”, Solid State Devices and Materials(2014SSDM), Tokyo, Japan, September 21-25, 2010

416.        H. C. Hsu1, Y. K. Su1,2, S. J. Huang1, C. Y. Cheng1, H. C. Chen1, J. H. Hong1, S. W. Chen1, K. C. Chen1, “The investigation of optical characteristics of nonpolarInGaN/GaN multiple quantum wells with Indium-step-graded QW structure”, 兩岸光電研習營, Taipei, Taiwan, December 6-8, 2010

417.        H. J. Huang*1, Y. K. Su1, C. Y.  Tseng2, S. C. Lin2, and H. C. Hsu1, “Light Intensity Improvement by Stepwise ElectronInjection Layer for Nitride-Based MQW LEDs”, 兩岸光電研習營, Taipei, Taiwan, December 6-8, 2010

418.        C. F. Tsai, Y. K. Su, and C. L. Lin, “Improvement in the light extraction of InGaN-based light emitting diodes by micro-textured ITO surface with different geometric patterns”, 5th Asia-Pacific Workshop on Widegap Semiconductors(APWS2011), Toba, Mie, Japan, May 22-26, 2011

419.        Y. H. Lu, Y. K. Su, Y. K. Fu, R. Xuan, and B. J. Chen, “Barrier-thickness dependence of InGaN/AlInGaN LEDs”, 5th Asia-Pacific Workshop on Widegap Semiconductors(APWS2011), Toba, Mie, Japan, May 22-26, 2011

420.        C. F. Tsai, Y. K. Su, and C. L. Lin, “Fabrication of InGaN-based light-emitting diodes using ZnO buffer layer with SiO2 convex-patterned masks”, 5th Asia-Pacific Workshop on Widegap Semiconductors(APWS2011), Toba, Mie, Japan, May 22-26, 2011

421.        Y. C. Chu, Y. K. Su, C. H. Chao, and W. Y. Yeh, “Studies on color transferring of CdSe/ZnS quantum dots in polymethylmethacrylate hybridized on InGaN light emitting diodes”, 5th Asia-Pacific Workshop on Widegap Semiconductors(APWS2011), Toba, Mie, Japan, May 22-26, 2011

422.        Y. K. Fu, Y. H. Lu, R. H. Jiang, B. C. Chen, R. Xuan, Y. H. Fang, Y. K. Su, C. F.Lin, and J. F. Chen, “Near ultraviolet light-emitting diodes with AlInGaN barrier layers prepared at various trimethylgallium flows grown by atmospheric pressure metalorganic vapor phase epitaxy”,  5th Asia-Pacific Workshop on Widegap Semiconductors(APWS2011), Toba, Mie, Japan, May 22-26, 2011

423.        Y. H. Lu, Y. K. Su, Y. K. Fu, R. Xuan, and B. J. Chen, “Effects of InGaN barriers on the properties of near-ultraviolet LEDs”, 5th Asia-Pacific Workshop on Widegap Semiconductors(APWS2011), Toba, Mie, Japan, May 22-26, 2011

424.        C. F. Tsai, Y. K. Su, and C. L. Lin, “Further improvement in the light output power of InGaN-based ligth emitting diodes by reflective current blocking design”, 5th Asia-Pacific Workshop on Widegap Semiconductors(APWS2011), Toba, Mie, Japan, May 22-26, 2011

425.        C. W. Hsu and Y. K. Su, “Quality improvement for GaN grown on Si (111) using organic-metal vapor-phase epitaxy”, 5th Asia-Pacific Workshop on Widegap Semiconductors(APWS2011), Toba, Mie, Japan, May 22-26, 2011

426.        Tzung-Han Wu, Yan-Kuin Su, Chiao-Yang Cheng, Hsin-Chieh Yu,“Fabrication of InGaAsN Double Hetero-junction Solar Cells for Application on Multi-junction Tandem Solar Cells,” International Conference on Materials for Advanced Technologies(ICMAT2011) Singapore, Jun 26-Jul 1, 2011

427.        Tzung-Han Wu, Yan-Kuin Su, Chiao-Yang Cheng, Yi-Wen Lee,“Fabrication of Micro-textured Structure as Anti-reflection Layers by Imprint-patterning Process on GaAs Solar Cells to Enhance the Conversion Efficiency,”International Conference on Materials for Advanced Technologies(ICMAT2011) Singapore, Jun 26-Jul 1, 2011

428.        Shyh-Jer Huang, Han Cheng Lee, Yan-Kuin Su, Tzung-Han Wu, Hsin-Chieh Yu, “A Study of Lattice Distortion in GaN-based Photovoltaics with a Gradient InxGa1-xN Absorption Layer,” International Conference on Materials for Advanced Technologies(ICMAT2011) Singapore, Jun 26-Jul 1, 2011

429.        Yan-Kuin Su, Tzung-Han Wu, Shyh-Jer Huang, Hsin-Chieh Yu, Chiao-Yang Cheng, Hsi-Jung Wu,“The Investigation of In0.22GaAs/GaAs Multi-quantum Wells Solar Cells,” International Conference on Materials for Advanced Technologies(ICMAT2011) Singapore, Jun 26-Jul 1, 20111

C. Books

1. Shen S. Li and Yan-Kuin Su, “Intersubband Transitions in Quantum Wells: Physics and Devices” Klumer Academic Publications, December (1997)

2. K. Gibbson and Yan-Kuin, Optoelectronic Materials and Devices, SPIE, American Optical Society (1998)

3. Yan-Kuin su and P. B. Bhattarya, Optoelectronic Materials and Devices, SPIE, American Optical Society, August (2000)

4. Yan-Kuin Su, “Technical manual of solar cell- Chapter 5. The technology of energy generation for solar cell with the high efficiency and concentrator----The growth technology of  III-V compound semiconductor for multi-junction solar cell” (2008)

5. Yan-Kuin Su, “Comprehensive Semiconductor Science and Technology: Devices - Nitride-Based LEDs and Superluminescent LEDs” (publication date: OCT-2010 )

D. Patents

Taiwan

(1)         “集魚燈具裝置” (FISHING LAMP APPARATUS)，ROC patent (Invention No. I318824)

(2)         “一種適用於GPS/WLAN之雙頻濾波器”(A DUAL-BAND BANDPASS FILTER APPLIED ON GPS / WLAN APPLICATIONS) ROC patent (Invention No. M382600)

(3)         “超寬頻雙工器” (AN ULTRA WIDE BAND (UWB) DIPLEXER ) ，ROC patent (Invention No.1325653)

(1)         “具指插式步階阻抗共振器之寬頻濾波器”- ROC patent(發明第I 318824號)、公開日期: 2009/12/21、專利期限: 2009/12/21-2026/07/06

(2)         “耦合增強式超寬頻濾波器” -ROC patent (Invention No. I 307576)專利期限:2009/03/11~2026/01/26

(3)         “半導體元件之散熱座的製造方法” -ROC patent (Invention No. I 307915)專利期限:2009/03/21~2026/6/25

(4)         “半導體元件之嵌入式金屬散熱座及其製造方法”-ROC patent (Invention No. 297537)專利期限:2008/06/01~2026/6/25

(5)         “一種使用硫化鋅摻鏑(ZnS:Dy)薄膜的白光發光二極體之製程方法” -ROC patent (Invention No. I297552)專利期限:2008/06/01~2025/11/23

(6)         “一種具有低溫多晶矽薄膜之太陽能電池元件結構” -ROC patent (新型 M330563)專利期限:2008/04/11~2017/01/01

(7)         “具有微晶矽質薄膜之太陽能電池”-ROC patent (新型M327085)、專利期限：2008/02/11 - 2016/11/28

(8)         “一種使用步階式阻抗共振組成之平面雙工器”-ROC patent (新型M324306)、專利期限：2007/12/21 - 2016/11/19

(9)         “具有多階層微晶矽質之薄膜太陽能電池”-ROC patent (新型M323112)、專利期限：2007/12/01 - 2016/12/27

(10)    “一種具有橢圓函數響應之介質濾波器”-ROC patent (新型M301415)申請日期：2006/05/08、公開日期：2006/11/21、專利期限：2006/11/21 - 2016/05/07

(11)    “具有奈米金屬粒子儲存單元之非揮發性記憶體單元的構造”-ROC patent (新型M312769)申請日期：2006/08/14、公開日期：2007/05/21 專利期限：2007/05/21 - 2016/08/13

(12)    “一種共面波導式超寬頻濾波器“-ROC patent (I284998)申請日期: 2006/01/27、公開日期: 2007/08/01

(13)    “具步階阻抗共振器之髮夹型寬頻濾波器”-ROC patent (新型M311185)申請日期:2006/08/14、公開日期:2007/05/01專利期限：2007/05/01 - 2016/08/13

(14)    “具混附波壓抑之髮夾型寬頻濾波器”-ROC patent (新型M311129)申請日期:2006/08/14、公開日期:2007/05/01專利期限：2007/05/01 - 2016/08/13

(15)    “共面波導式饋入之多角形寬頻天線”-ROC patent (新型M321152號)申請日期: 2007/02/27、公開日期: 2007/10/21

(16)    “複數枝路之寬頻天線”-ROC patent (申請中)

(17)    “微帶線饋入之橢圓形超寬頻天線”-ROC patent (申請中)

(18)    “髮夾型超寬頻雙工器”-ROC patent (新型M311130 Invention No.95124788)申請日期2006/08/31，公開日期2007/05/01

(19)    “具指插式步階阻抗共振器之寬頻濾波器“-ROC patent (Invention No.95124787)

(20)     “一種具有缺陷接地結構之平面式濾波器”-ROC patent (新型 Invention No.M 304165) -Nov 21, 2006 申請日期:2006/05/15、公開日期:2007/01/01專利期限：2007/01/01 - 2016/05/14

(21)    “一種奈米金屬粒子誘發低溫多晶矽的製程方法”-ROC patent (Invention No.I 267123) -Nov 21, 2006、公開日期: 2006/11/21 專利期限：2006/11/21 - 2025/08/21

(22)    “一種具有埋藏式元件之寬止帶濾波器”-ROC patent (Invention No.M 300375) -Nov 1, 2006、申請日期:2006/05/08、專利期限：2006/11/01 - 2016/05/07

(23)    “具寬止帶且快速衰減之超寬頻濾波器”-ROC patent (Invention No.M 300376) -申請日期:2006/05/08、公開日期:Nov 1, 2006

(24)    “具混附波壓抑之超寬頻濾波器”-ROC patent (Invention No.M 300377) -申請日期:2006/05/15、公開日期:Nov 1, 2006、專利期限：2006/11/01 - 2016/05/14

(25)    “光檢測器及其製造方法”-ROC patent (發明I281267 )申請日期:2005/04/07、公開日期:2007/05/11、專利期限: 2007/05/11 - 2025/04/06

(26)    “一種低溫多晶矽的製程方法”-ROC patent (Invention No.M 263341)-Oct. 10, 2006、申請日期:2005/08/23、        專利日期: 2006/10/01 - 2025/08/22

(27)    “具有指插式耦合線之超寬頻濾波器”-ROC patent (Invention No.M 295345) -Aug 1, 2006、申請日期:2006/02/03、專利期限: 2006/08/01 - 2016/02/02

(28)    “具止帶快速衰減之超寬頻濾波器”-ROC patent (Invention No.M 295346)-Aug 1, 2006、申請日期:2006/02/03、專利期限:2006/11/01 - 2016/05/07

(29)    “發光二極體之製造方法” -ROC patent (發明I268003)-申請日期: 2005/12/20、公開日期:2006/12/01、專利期限: 2006/12/01 - 2025/12/19

(30)    “橫向電流阻障發光二極體及其製造方法”-ROC patent (Invention No. 122756)-November 12, 2002、公告日期: 2004/10/21專利期限: 2004/10/21 - 2022/11/11

(31)    “Fabrication method for GaN MOSFETs”-ROC patent (Invention No. 169680)-2003

(32)    “Structure of GaN MSM UV photodetector and its fabrication method”-ROC patent (Invention No. 169681)-2002

(33)    “A modified suceptor structure for epitaxial wafers”-ROC patent (Invention No. 186781)-2002

(34)     “一種磊晶片乘載器結構改良”-ROC patent (Invention No. 186781) –Jan 21, 2002

(35)    氮化鎵金屬－半導體－金屬型紫外光感測器之結構及其製造方法－ROC patent (Invention No. 169681)-December 21, 2002

(36)    “A modified water cooled gas nozzle”-ROC patent (Invention No. 180792)-2002

(37)    “氮化鎵金氧半場效電晶體之製造方法”-ROC patent (Invention No. 169680)-December 21, 2002

(38)    “一種水冷式雙層毛細管之氣體噴頭結構改良”-ROC patent (Invention No. 180792) -Sep 1, 2001

(39)    “II-VI族半導體之歐姆接觸構造及其製作方法”-ROC patent (Invention No. 132585)-2001

(40)    “A Multi-Peak Resonant Tunneling Diodel-Based Electronic Circuit and Large Signal Multi-Peak RTD SPICE Model”-ROC patent (Invention No. 394453)June 11, 2002

(41)    “低雜訊遠紅外線汞鎘碲(HgCdTe)光偵測器及其製造方法”-ROC patent (Invention No.120926) -September 21, 2000

(42)    “多峰共振穿透二極體大信號模擬電路”-ROC patent (Invention No. 160174), 2000

(43)    “The InAs/GaSb Superlattice Infrared Detector by MOCVD System”-ROC patent (Invention No. 104113) - May 21, 1999

(44)    “Low Divergence Beam Angle of Red Semiconductor Laser” -ROC paent (Invention No. 101681) – Feb. 11, 1999

(45)    “高效率磷化鎵銦NIP太陽電池”-ROC patent (Invention No. 130666)-Nov. 21, 1997

(46)    “Double Frequency GaInSb Strained Layer Superlattice”- ROC patent (Invention No. 67602) - July 5, 1995

(47)    “以有機金屬氣相磊晶法製作砷化銦/銻化鎵超晶格紅外線檢測器之製法”-ROC patent、申請日期: 1997/02/17、公開日期:1999/05/21

專利期限: 1999/05/21 - 2017/02/16

(48)    “雙頻銻化銦鎵應力層超晶格選頻器”-ROC patent (Invention No.00229334)、申請日期: 1994/04/01、公開日期:1994/09/01、專利期限:1994/09/01 - 2014/03/31

United State

(1)         095-038BP/”EMBEDDED METAL HEAT SINK FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME”-US patent (Invention No. US 7452755 B2)- 2008

(2)         “ETHOD FOR MANUFACTURING HEAT SINK OF SEMICONDUCTOR DEVICE” -US patent (Invention No. 7,387,915 B2)- 2008

(3)         “Lateral current blocking light emitting diode and method of making the same” -US patent (Invention No.6,781,147)-2003

(4)         “Ohmic contact structure of II-VI semiconductor and its fabrication process”-US patent (Invention No.6469319B1)-2002

(5)         “Two-Mode InGaSb/GaSb Strained-Layer Superlattice Infrared Photodetector”-U.S. patent (Invention No. 6037604)-March 14, 2000

(6)         “InAs-GaSb Superlattice Structure Infrared Detectors Fabricated by Organic Vapor Phase Epitaxy”- U.S. patent (Invention No. 6005259) - Dec. 21, 1999

(7)         ”Red Semiconductor Laser of Low Beam Divergence” – U.S. patent (Invention No. 5923689) - July 13, 1999

(8)         ”A new High Efficiency InGaP NIP Solar Cell” – U.S. patent (Invention No. 5911839) - June 15, 1999

(9)         ”A Multi – Peak Resonant Tunneling Diode - Based Electronic Circuit and Large Signal Multi - Peak Resonant Tunneling Diode SPICE Model” - U.S. patent (Invention No. 5535146) – Apr. 27, 1995

Japan

(1)         095-038BP/” EMBEDDED METAL HEAT SINK FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME”-Japan patent (2006申請中)

(2)         095-039BP/”METHOD FOR MANUFACTURING HEAT SINK OF SEMICONDUCTOR DEVICE” -Japan patent (2006申請中)

Korea

(1)         095-039BP/”EMBEDDED METAL HEAT SINK FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME” - Korea patent(發明專利第10-0787705號)申請日期:2006/10/19、公開日期:2007/12/13、專利期限:2006/10/19-2026/10/19

(2)         095-038BP/”METHOD FOR MANUFACTURING HEAT SINK OF SEMICONDUCTOR DEVICE”-Korea patent(發明專利第10-0781917號)申請日期:2006/10/24、公開日期:2007/11/28、專利期限:2006/10/24-2026/10/24

China

(1)         “半導體元件之散熱座的製造方法” -China patent (Invention No. ZL 200610140720.3)、申請日期:2006/09/30、公開日期2009/06/03、專利期限:2006/09/30-2026/09/30

(2)         “半導體元件之嵌入式金屬散熱座及其製造方法” -China patent (Invention No. ZL 200610140721.8)、申請日期:2006/09/30、公開日期:2009/04/15、專利期限:2006/09/30-2026/09/30

Germany

(1)         “METHOD FOR MANUFACTURING HEAT SINK OF SEMICONDUCTOR DEVICE” -Germany paten (Inventaion No.10 2007 021 983)、申請日期:2006/06/26、公開日期:2009/04/09

(2)         ”EMBEDDED METAL HEAT SINK FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME”- Germany patent (Invention No. 10 2007 021 986)(2009核准)

 

E. Other publications

Technical transfer

Title: 嵌入式光電元件散熱座及電極墊製作方法

Company: CHIMEI Lighting Technology Corperation

Price: 4 million

folderProjects

A. National Science Council Projects

l              「Dialouge on culture and technology」 international conference – on starting with multi-media platform (100-2916-I-006-019-A1) National Science Council, Executive Yuan,        Common Project Leader (2011/11/11~2011/11/12)

l              Hetrogenerous microfluidic medical optoelectric integration sensing chip for ELISA application - Sub project 1 : GaN-based optoelectric sensing platform for medical   application (100-2811-E-006-050) National Science Council, Executive Yuan, Common Project Leader (2011/08/01~2012/07/31)

l              Single-layer structure with quantum dots organic thin-film memory element of the development (100-2221-E-006-040-MY2 ) National Science Council, Executive Yuan, Common Project Leader (2011/08/01~2013/07/31)

l              Grant colleges and universities award a special telant measures (100-3114-C-168-001-ES) National Science Council, Executive Yuan, Common Project Leader (2011/08/01~2012/07/31)

l               Photoelectronics and semiconductor technology development plan and consideration of planning (II)(100-3011-P-006-001) National Science Council, Executive Yuan, Project Leader (2011/01/01~2011/12/31)

l              Development of the intelligent power chips module and application of the energy-saving livelihood systems (3/3) (100-2218-E-006-003), National Science Council, Executive Yuan, Project Leader (2011/10/01 ~ 2012/09/30)

l              Development of the intelligent power chips module and application of the energy-saving livelihood systems (2/3) (99-2218-E-006-005), National Science Council, Executive Yuan, Project Leader (2010/10/01 ~ 2011/09/30)

l              Hetrogenerous microfluidic medical optoelectric integration sensing chip for ELISA application - Sub project 1 : GaN-based optoelectric sensing platform for medical application (99-2221-E-006-084-MY3), National Science Council, Executive Yuan, Project Leader (2010/08/01 ~ 2013/07/31)

l              The planning and promotion of the designated topic in creative energy saving and carbon reduction (99-3113-S-006-001), National Science Council, Executive Yuan, Project Leader (2010/06/01 ~ 2011/03/31)

l              The planning and deliberation of the development of photon and semiconductor technology (99-3011-P-006-001), National Science Council, Executive Yuan, Project Leader (2010/01/01 ~ 2010/12/31) 

l              The planning and implementation of matching technology platform for digital serving and building in designated topic (99-2218-E-168-002), National Science Council, Executive Yuan, Common Project Leader (2010/01/01 ~ 2010/12/31)

l              Fabrication of high efficiency thin film solar cell (98-3114-E-006-003-CC2), National Science Council, Executive Yuan, Project Leader (2009/12/01 ~ 2010/12/31)

l              Development of the intelligent power chips module and application of the energy-saving livelihood systems (1/3) (98-2218-E-006-245), National Science Council, Executive Yuan, Project Leader (2009/10/01 ~ 2010/12/31) 

l              Integrated photodetectors (98-2221-E-006-017), National Science Council, Executive Yuan, Project Leader (2009/08/01~2010/10/31)

l              The planning and implementation of matching technology platform for digital serving and building in designated topic (97-2735-E-168-001), National Science Council, Executive Yuan, Common Project Leader (2008/12/01 ~ 2009/12/31)

l              The Project of southern Taiwan Nanotechnology Core Facilities Services (3/3) (97-2120-M-006-006), National Science Council, Executive Yuan, Common Project Leader (2008/08/01 ~ 2011/07/31)

l              The planning and implementation of matching technology platform for digital serving and building in designated topic（NSC 97-2735-E-168-001）, National Science Council, Executive Yuan, Common Project Leader（2008/12 ~ 2009/12）

l              Application of White Light LED for Focus Illumination – Invention of lighting module, National Science Council, Executive Yuan, Project Leader（2008/10/01 ~ 2011/09/30）

l              The application of advanced photonic crystal pattern substrate in fabricating GaN LEDs, National Science Council, Executive Yuan, Project Leader（2009/08/01 ~ 2010/07/31）

l              Hetrogenerous microfluidic medical optoelectric integration sensing chip module, National Science Council, Executive Yuan, Project Leader（2009/08/01 ~ 2012/07/31）

l              Investigation of the TCO glass for the enhancement of the self-fabricating thin-film solar cells, National Science Council, Executive Yuan, Project Leader（2009/10/01 ~ 2010/09/30）

l              Fabrication of high efficiency thin film solar cell, National Science Council, Executive Yuan, Project Leader（2009/12/01 ~ 2010/12/31）

l              Integrated photodetectors, National Science Council, Executive Yuan, Project Leader（2009/08/01 ~ 2010/07/31）

l              Ⅲ-Nitride Semiconductor of White LightLED for Illumination-major：Synthesis of Ⅲ-Nitride Semiconductor of White Light LED (2/3)  (2005)

l              Ⅲ-Nitride Semiconductor of White Light LED for Illumination-Sub project 1：Fabrication of GaN LED without Phosphor (2/3)  (2005)

l              Investigation of GaN Blue VCSEL Diode-sub-3：Measurement of GaN Blue VCSEL and Properties of material (2005)

l              Fabrication of hign contrast ratio GaN PIN photodetectors (2005)

l              Fabrication of High Frequency and High Speed Devices (V) (2004)

l              Ⅲ-Nitride Semiconductor of White LightLED for Illumination-Major project：Synthesis of Ⅲ-Nitride Semiconductor of White Light LED (2/3)  (2004)

l              Ⅲ-Nitride Semiconductor of White Light LED for Illumination-Sub project 1：Fabrication of GaN LED without Phosphor (2/3)  (2004)

l              Investigation of GaN Blue VCSEL Diode-Sub project 3：Measurement of GaN Blue VCSEL and Properties of material (2004)

l              Fabrication of High Frequency and High Speed Devices (IV) (2003)

l              Investigation of GaN Based Laser , White Light Source and High Frequency Device-Investigation of GaN Short Wave Laser Diode and VCSEL(3/3) (2003)

l              Ⅲ-Nitride Semiconductor of White LightLED for Illumination-Major project：Synthesis of Ⅲ-Nitride Semiconductor of White Light LED(1/3) (2003)

l              Ⅲ-Nitride Semiconductor of White Light LED for Illumination-Sub project 1：Fabrication of GaN LED without Phosphor(1/3) (2003)

l              Investigation of GaN Based Laser and white LED and High Frequency Device-Investigation of GaN Based Short Wave Laser Diode and VCSEL(2/3) (2002)

l              Fabrication of High Frequency and High Speed Devices(III) (2002)

l              Fabrication of InGaN Quantum Dots LED (2002)

l              Investigation of GaN Based Laser, white LED and High Frequency Device-Investigation of GaN Based Short Wave Laser Diode and VCSEL (1/3) (2001)

l              Fabrication of High Frequency and High Speed Devices (III) (2001)

l              Investigation of GaAs BasedHEMT/HBT Microwave Device and Model-Microwave Device Fabrication and Modeling of GaAs Based HBT (2000)

l              Investigation of GaN Based Optoelectronic and Microwave Device-Investigation of GaN Based Green’yellow and orange LED and short wave Laser Diode(1/3) (2000)

l              Investigation of Microwave Device and Circuit Fabrication in GaAs HEMT/HBT(2/3) (2000)

l              Investigation of Microwave Device and Circuit Fabrication in GaAs HEMT/HBT (3/3)-Microwave Device Fabrication and Modeling of GaAs Based HBT (3/3) (2000)

l              Investigation of GaN Based Optoelectronic and Microwave Device- Investigation of GaN Based Green’yellow and orange LED and short wave Laser Diode (2/3) (2000)

l              Research of Microwave Device and Circuit Fabrication in GaAs HEMT/HBT (3/3)-Microwave Device Fabrication and Modeling of GaAs Based HBT (3/3) (2000)

l              Research of High Frequency and High Speed Devices (II) (2000)

B. General Projects

l       Go-Go LOHOAS Recreational Technology Research and Development Center, Ministry of Education, project leader（2010/01 ~2010/12）

l       The methods and applications in electrophoretic deposition of Phosphors for LEDs, CHIMEI Lighting Technology Corperation, Project leader（2009/02/01 ~ 2010/01/31）

l       Solar energy technology and environmental protection integrated platform of teaching and research building, Ministry of Education, Common project leader（2009/04 ~ 2010/03）

l       Radiation resistant and wavelength converted space solar cells with high efficiency, National Space Organization, Project leader（2009/04/01 ~ 2010/03/31）

l       Application of White Light LED for Focus Illumination-Invention of lighting module(3 Years)-Sub project 2-Fabrication and package in LEDs (97-EC-17-A-07-S1-105) ,  Local industrial technology development program, Ministry of Economic Affairs, Common project leader（2008/10 ~ 2011/9）

l       Energy technology research promotion program - LED Lighting Technology Research Center, Bureau of Energy, Ministry of Economic Affairs , Project leader（2009/08/01 ~ 2010/07/31）

l       The fabrication of Metal-Insulator-Semiconductor (MIS) devices for using high-k HfOxNy gate dielectric layer growing by RF magnetron sputtering (2006)

l       High bright LED applied for LCD back-lighting module (2006)

l       The Development of Etching Technology in High Efficiency Solar Cell (2006)

l       The development of high Al composition nitride-based material for UV photodetector (2006)

l       High efficient and long life-time white organic LED (2005)

l       GaN based microwave device development for high temperature application (2005)

l       Characteristics and reliability of Cu diffusion barrier with low dielectric constant materials (2005)

l       Fabrication of InGaN LED with Flip Chip (2004)

　

folderHolding or Attending National Conferences

l “Current issue and improvement of GaN-Gased Light-Emitting Diodes”, 2011 Asia-Pacific Academy of Materials, Hsinchu, Taiwan, AUGUST 19-12, 2011

l “High Efficient III/V Compound Photovoltaic and Its Application on HCPV”, 2011 Symposium on Nano Device Technology(奈米元件技術研討會), Hsinchu, Taiwan, APRIL 21, 2011

l “The progress of non- and semi-polar GaN-based materials and their applications in optical devices”2011 LED固態照明科技研討會, Taoyuan, Taiwan, APRIL 15, 201

l “Improvement “Improvement of Current Drooping Effect in GaN-Based LEDs”, OPT 2010, Tainan, Taiwan, December 3-4, 2010

l “Ultravioltet  “Photodetectors with ZnO Nanorod Arrays Prepared by Hydrothermal Process”, The 2nd Cross-Strait Workshop on Wide Band Gap Semiconductor, September 4-10,Dongguan, China, 2010

l “Persistent Photocondutivity of ZnO and Nanorod Arrays”, The 6th International workshop on ZnO and Related Materials, August 5-7, Changchun, China, 2010

l “The Fabrication and Application of High Concentrated Photovoltaic Solar Cell”, 2010 Academic Symposium on Optoelectronics and Microeletronics Technology (ASOMT2010), July 28-August 6, Harbin , China, 2010

l “Quantum Well Structure and the High Concentration Photovoltaic Application for III-V Materials”, International Electron Devices and Materials Symposia(IEDMS2009), Kweishan, Taoyuan, Taiwan, November 19-20, 2009

l “Silicon wafer level package (WLP) technology”, Second International Conference on White LEDs 2009, Taipei, Taiwan, December 13-16, 2009

l “Efficiency Improvement of GaN-Based Light Emitting Diodes By Using Nanosphere Technology” The First Cross-Strait Workshop on Wide Band Gap Semiconductor, Taipei, Taiwan, December 17-18, 2009

l “Quantum Well Structure and the Concentrator Applications for III-V Materials” , Photonics and OptoElectronics Meetings(POEM2009), Wuhan, China, August 8-10, 2009

l “The improvement of extraction efficiency for GaN-based light emitting diodes”, Asia-Pacific Workshop on Widegap Semiconductors(APWS2009), Zhang Jia Jie, Hunan, China, May 24-28, 2009

l “High Performance of Green Light Emitted from InGaN organic Phosphor Powders (C545T) Hybrid Light Emitting Diodes” The 6th International Workshop on Industrial Technologies for Optoelectronic Semiconductors (IWITOS 2008), Seoul, Korea, January 29, 2008

l “發光二極體之應用水上集魚燈”,白光LED照明技術與策略研討會,台中惠蓀林場,台灣, July 20-21, 2007

l “Ultra High Power Light-Emitting Diodes by Copper Electroplating and  High Thermal Dissipation” Taiwan Solid State Lighting ,tSSL ,台北國際會中心, Taiwan, Jun 15-16, 2007

l "Electrostatic Discharge Engineering of Nitride-Based Light Emitting Diodes", 3rd Asia-Pacific Workshop on Widegap Semiconductors (APWS-2007), Jeonju Core Rivera Hotel, Jeonju(Chonju), Korea, March 11, 2007

l Chinese Academy of Sciences, Beijing, China, Mach 27-31, 2007

l Wuhan University of Technology, Wuhan, China, Mach 22-26, 2007

l “Gallium Nitride-based Light Emitting Diodes”, The 11th Optoelectronics and Communications Conference (OECC 2006), Kaohsiung City, Taiwan, July 3, 2006

l “Gallium Nitride-based Light Emitting Diodes”, ABU DHABI e-Government Project Meeting, Abu Dhabi, United Arab Emirates, March 3, 2006

l “The Current and Future Prospects of Taiwan’s Optoelectronic Industry in the Twentieth-First Century”, Second Asia-Pacific Workshop on Widegap Semiconductors (APWS 2005), Hsinchu, Taiwan, March 7,2005.

l “Fabrication and Application of GaN-Based Quantum Devices”, International Symposium on Molecular Nano-Engineering and Its Development into Microsystems, Waseda University, Tokyo, Japan, Dec. 20-21, 2004

l “High Efficiency of GaN-Based Light Emitting Diodes”, Photonics Conference 2004, DaeMyung Condo, Danyang, November 3~5, 2004

l Asia-Pacific Widegap Semiconductor Conference, Awaji Shima, Japan－Organization Committee Member（2003）

l Cross－Strait Nano and Optical Conference, Tainan, Taiwan（2003）－Organization Chairman

l International Symposium on the Physics of Semiconductor and Applications, Cheju, Korea－Organization Committee Member（2002）

l Asia-Pacific International Solid State Circuit Conference, Miao-Li, Taiwan ─ Committee Member (2001)

l Second International Symposium on the Basis and Application of Plasma Technology ─ Kaohsiung, Taiwan(2001)

l International Conference on Lasers and Electro-Optics (CLEO)/Pacific Rim, Chiba, Japan, July 16-20 (2001)－Technical Program Committee Member

l International Conference on Lasers and Electro-Optics (CLEO)/Pacific Rim, Chiba, Japan, July 16-20 (2001) ─ Technical Program Committee Member

l International Conference on Electron Devices and Materials, Chunli, Taiwan, Dec 14-16－Technical Program Committee Member

l International Conference on Fiber Optics and Photonics－Session Chairman, Calcutta, India, Dec . 18-20

l International Electron Devices and Materials Symposia, Chung-Li, Taiwan, Dec. 14-16 ─ Technical Program Committee Member

l International Workshop on Nitride Semiconductors, Nagoya, Japan, September 24-27 (2000)－International Advisory Committee

l International Optoelectronics Symposium, Taipei, Taiwan, July 26-28 (2000) －Conference General Chair

l The Sixth IUMRS International Conference on Advanced materials, Hong Kong, July 24-26 ─ Program Committee Member

l The Sixth IUMRS, International Conference on Advanced Materials, Hong Kong, July 24-26 (2000)－Session Chair

folder Session Chairman and Committee Member of International Conference

l      “16th Microot“16th Microoptics Conference ( MOC 2010 )”, October 31-November 3, Hsinchu, Taiwan- Conference Co-Chair (2010)

l      2010 Inetrnational Conference on Optics and Photonics in Taiwan(OPT’10), December 3-4，Tainan, Taiwan ─ Program Committee Member (2010)

l      The 2nd Cross-Strait Workshop on Wide Band Gap Semiconductor, September 4-10, Dongguan, China ─ Co-Chair (2010)

l      The 6th International workshop on ZnO and Related Materials, August 5-7, Changchun, China ─ Committee Member (2010)

l      The Asia-Pacific Workshop on Widegap Semiconductors, May 24-28, Zhang Jia Jie, Hunan, China ─Adivisory Committee Co-Chair (2009)

l      SPIE’s Gallium Nitride Materials and Devices III Conference, January 19-24, 2008, San Jose, CA ─Program Committee Member

l      International Workshop on Nitride Semiconductors, October 22-27, 2006, Kyoto, Japan,─Program Committee

l      Materials Research Society, 2006 Spring Meeting, San Francisco, Ca., USA April 17 - 21, 2006─Symposium Organizer

l      International Workshop on Nitride Semiconductors, October 22-27, 2006, Kyoto, Japan─Program Committee

l      13th International Conference on Metal Organic Vapor Phase Epitaxy, May 22-26, 2006.  Miyazaki, Japan. ─International Advisory Committee.

l      The International Symposium on Blue Laser and Light Emitting Diodes(ISBLLED), Montpellier, France. May 15 to 19, 2006.─International Advisory Committee. 

l      The 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004), Gyeongyu, Korea, Mar. 15-29,2004 ─Session Chair

l      Asia-Pacific International Solid State Circuit Conference, Miao-Li, Taiwan ─ Committee Member

l      Second International Symposium on the Basis and Application of Plasma Technology ─ Kaohsiung, Taiwan

l      International Conference on Lasers and Electro-Optics (CLEO)/Pacific Rim, Chiba, Japan, July 16-20 (2001) ─ Technical Program Committee Member

l      International Conference on Electron Devices and Materials, Chunli, Taiwan, Dec 14-16－Technical Program Committee Member

l      International Conference on Fiber Optics and Photonics－Session Chairman, Calcutta, India, De . 18-20

l      International Electron Devices and Materials Symposia, Chung-Li, Taiwan, Dec. 14-16 ─ Technical Program Committee Member

l      International Workshop on Nitride Semiconductors, Nagoya, Japan, September 24-27 (2000)－International Advisory Committee

l      "International Optoelectronics Symposium, Taipei, Taiwan, July 26-28 (2000) －Conference General Chair

l      The Sixth IUMRS International Conference on Advanced materials, Hong Kong, July 24-26 ─ Program Committee Member

l      The Sixth IUMRS, International Conference on Advanced Materials, Hong Kong, July 24-26 (2000)－Session Chair

l      ”Optical Propertics in InGaN/GaN Multiple Quantum Wells and Blue LEDs”, The Fifth IUMRS International Conference on Advanced Materials, Beijing, China, June 13-18 (1999)－Symposium Organizer and Session Chair

l      International Electron Device and Materials Symposium, Tainan, Taiwan, Dec. 12-16（1998）－Organization Chairman

l      Trans-Pacific Workshops on Mechatronic Technology CA, USA, Aug. 6-10 (1998)－International Steering Committee

l      SPIE: Optoelectronics in China, Beijing, China, July 12-16 (1998)－Organization Chairman

l      SPIE: Optoelectronic Materials and Devices Vol. 3419, July 8-12（1998）－Chairman and Editor

l      ”Interband and Intersubband Transitions of InGaSb/GaSb Multiple Quantum-Well Photodetectors”, International Conference on Intersubband Transitions in Quantum Wells-Physics and Applications（ITQW’97）, Tainan, Taiwan, May 2-6（1997）－Organization Chairman

l      SPIE International Symposium on Lasers, Optoelectronics, and Microphotonics, Beijing China（1996）－Organization Member

l      The 1994 international Conference on Electronic Materials, Hsinchu, Taiwan, July 6-10（1994）－Symposium Organizers and Section Chairman

l      ”TnGaSb/GaSb Strained-Layer Superlattice of Two-Mode Infrared Photodetectors”, International Symposium on Optoelectronics, Computer, Communication and Control, Hsinchu, Taiwan, Sep. 12-16（1993）－Organization Member

l      ”Stoichiometric Properties of GaSb Compounds Grown by Low Temperature MOCVD”, First Rim Conference on Advanced, Materials, Hangzhou, China, June 13-16（1992）－Session Chairman

l      ”Ohmic and Schottky Contacts to GaSb”, International Conference on Thin Film and Application, Shanghai, China, Apr. 15-17（1991）－Session Chairman

l      “Fabrication of Acousto-Optic Modulators on GaAs Substrates”, International Conference on Optoelectronic Science and Engineering, Beijing, China, Aug. 10-14（1990）－International Technical Committee Member

folderInternational Teaching and Research Exchange

l “Blue,Green and White Light LED Grown by Metal Organic Chemical Vapor Deposition”, First Asia-Pacific Widegap Semiconductor Conference, Awaji Shima., Japan, Mar. 9-12（2003）

l “Prospects for Research on Si Single Electron Device”, International Symposium on the Physics of Semiconductor and Applications (ISPSA), Cheju, Korea, Aug. 20-23(2002)

l “High Efficiency of Blue GaN Light Emitting Diodes”, Ninth Canadian Semiconductor Technology Conference, Ottawa, Canada, Aug 10-14(2001)

l “The Trend of Microelectromechanical System (MEMS)”, International MEMS Conference, Ottawa, Canada, Aug 14-15(2001)

l “Quantum Efficiency in Organic Light Emitting Diode", International Conference on Optoelectronics－LED: Research, Manufacturing and Applications, San Jose, CA, Jan 19-26(2001)

l “642-nm AlGaInP Laser Diodes with a Triple Tensile Strain Barrier”, Photonics-2000, International Conference on Fiber Optics and Photonics, Calcutta, India, Dec.18-20(2000)

l “Temperature-Dependent Electroluminescence and Quantum Efficiency of Organic Light Emitting Diodes", International Electron Device and Material Symposium, Taipei, Dec. 12-15(2000)

l “Fabrication of Gallium Nitride-Based Multiple Quantum Well Light Emitting Diodes", The Sixth IUMRS International Conference on Advanced Materials, Hong Kong, July 24-26(2000)

l “GaInP/AlGaInP Visible Quantum-Well Lasers with Low Beam Divergence and Low Threshold Current”, International Conference on the Application of Photonics Technology, Quebec, Canada, June 12-16(2000)

l “High Performance GaN-Based Light Emitting Diodes”, Conference, European Materials Research Society Conference, Strasbourg, France, May 28-June 2(2000)